TW200930828A - Method for measuring quantity of source material in chemical vapor deposition process - Google Patents
Method for measuring quantity of source material in chemical vapor deposition process Download PDFInfo
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- TW200930828A TW200930828A TW097146285A TW97146285A TW200930828A TW 200930828 A TW200930828 A TW 200930828A TW 097146285 A TW097146285 A TW 097146285A TW 97146285 A TW97146285 A TW 97146285A TW 200930828 A TW200930828 A TW 200930828A
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- source
- pressure
- gas
- source material
- evaporation portion
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- 239000000463 material Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims description 86
- 230000008020 evaporation Effects 0.000 claims description 83
- 239000007789 gas Substances 0.000 claims description 75
- 239000000126 substance Substances 0.000 claims description 48
- 239000012159 carrier gas Substances 0.000 claims description 26
- 238000005259 measurement Methods 0.000 claims description 6
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 239000011149 active material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
Description
200930828 六、發明說明： 【發明所屬之技術領域1 發明領域 本發明係有關於一種化學氣相沉積程序之源物質量之 . 5 測量方法，更詳而言之，本發明係有關於一種方法，該方 法係於將自收納於源物質蒸發部之源物質蒸發的源氣體供 給至沉積室並執行薄膜沉積之化學氣相沉積程序中，測量 殘留於源物質蒸發部之源物質量者。 © 【先前技術】 10 發明背景 利用化學氣相沉積法(Chemical Vapor Deposition; CVD) 之薄膜沉積於半導體元件之絕緣層與活動層、液晶顯示元 件之透明電極、電發光顯示元件之發光層與保護層等各種 應用中在技術上是非常重要的。一般而言，利用CVD所沉 15 積之薄膜物性會非常敏感地受到沉積壓力、沉積溫度、沉 積時間等CVD程序條件之影響，舉例言之，依據沉積壓力 © 之變化，所沉積之薄膜組成、密度、接著力、沉積速度等 會變化。 於CVD時，沉積壓力會直接地受到供給自源氣體供給 20 裝置之源氣體流量（即，源氣體壓力）之影響，且該源氣體供 給裝置係供給欲進行沉積之薄膜物質原料。即，為了適當 地控制CVD之沉積壓力，最好是必須正確地調節源氣體供 給裝置之源氣體壓力，源氣體之壓力調節在必須藉由高精 度將沉積速度調節為一定時是特別重要的。 3 200930828 第1圖係顯示習知源氣體供給裝置10之構造圖式。習知 源氣體供給裝置10係由收納源物質12之源物質蒸發部11、 加熱器13、栽運氣體供給部14及多數閥¥1至閥¥5所構成， 一般而言，由於源物質12於常溫下以固體狀態存在，因此， 5 為了源物質之源氣體化，必須將源物質加熱至常溫以上， 此時，加熱器13係執行加熱源物質之任務。 通常由於源氣體因比重大之關係而移動度小，因此會 利用載運氣體使源氣體順利地移動至沉積室内，多數閥係 依狀況開關，並調節源氣體及載運氣體之流量，舉例言之，200930828 VI. Description of the Invention: [Technical Field 1 of the Invention] Field of the Invention The present invention relates to the source quality of a chemical vapor deposition process. 5 Measurement methods, and more particularly, the present invention relates to a method, This method is for measuring the source quality remaining in the evaporation portion of the source material by supplying a source gas from which the source material stored in the evaporation portion of the source material is supplied to the deposition chamber and performing a thin film deposition chemical vapor deposition process. © [Prior Art] 10 Background of the Invention A film deposited by chemical vapor deposition (CVD) is deposited on an insulating layer and a movable layer of a semiconductor element, a transparent electrode of a liquid crystal display element, and an illuminating layer and protection of an electroluminescent display element. It is technically very important in various applications such as layers. In general, the physical properties of a film deposited by CVD are very sensitive to CVD process conditions such as deposition pressure, deposition temperature, deposition time, etc., for example, depending on the deposition pressure ©, the deposited film composition, Density, adhesion, deposition rate, etc. will vary. At CVD, the deposition pressure is directly affected by the source gas flow (i.e., source gas pressure) supplied from the source gas supply unit 20, and the source gas supply unit supplies the thin film material raw material to be deposited. Namely, in order to appropriately control the deposition pressure of the CVD, it is preferable to properly adjust the source gas pressure of the source gas supply means, and the pressure adjustment of the source gas is particularly important when the deposition rate must be adjusted to be constant by high precision. 3 200930828 Fig. 1 shows a structural diagram of a conventional source gas supply device 10. The conventional source gas supply device 10 is composed of a source substance evaporation unit 11 that houses the source material 12, a heater 13, a plant gas supply unit 14, and a plurality of valves ¥1 to $5. Generally, since the source material 12 is at room temperature The lower portion exists in a solid state. Therefore, in order to gasify the source of the source material, the source material must be heated to a normal temperature or higher. At this time, the heater 13 performs the task of heating the source material. Usually, since the source gas has a small mobility due to a large specific relationship, the carrier gas is smoothly moved to the deposition chamber by using the carrier gas, and most of the valves are switched according to the condition, and the flow rates of the source gas and the carrier gas are adjusted, for example,
10未使用載運氣體時，閥VI、閥V3會封閉。又，依據閥VI 之開關可否’載運氣體有時會通過源物質蒸發部11，有時 則不會通過。 另一方面’於化學氣相沉積過程中，若未正確地辨別 錢於源物質蒸發部11之源物質量，則無法判斷為了執行 15下一個沉積程序而應進—步地供給源物質或只要利用所殘 留之源物質即可進行沉積。萬一是在源物質12並未於執行 下一個沉積程序之程度下充分地殘留於源物質蒸發部^的 狀態中進行沉積程序時，則會無法正常地執行沉積程序。 然而，於習知源氣體供給裝置1G中，在薄膜沉積程序 20中無法正確地辨別殘留於源物質蒸發部11之源物質12量， 當然，雖然有在新的沉積程序前開放源物質蒸發部u而用 肉眼來判斷所殘留之源物質12量的方法，然而，由於有源 物質热發部11開放-次即無法使用之虞，因此在開放源物 質蒸發部⑽，若殘留有源物質12,則會浪費高價之源物 200930828 • · 質12 。 C發明内容3 發明揭示 發明欲解決之課題 . 5 為了解決前述習知技藝問題所完成的本發明之目的在 於提供一種方法，該方法係於將自收納於源物質蒸發部之 源物質蒸發的源氣體供給至沉積室並執行薄膜沉積之化學 氣相沉積程序中，將源氣體供給至源物質蒸發部直到載運 〇 氣體到達預定壓力時，並直到到達預定壓力時，自載運氣 10 體的供給量或供給時間測量殘留於源物質蒸發部之源物質 量。 用以欲解決課題之手段 為了達成前述目的，有關本發明之方法係於將自收納 於源物質蒸發部之源物質蒸發的源氣體供給至沉積室並執 15 行薄膜沉積之化學氣相沉積程序中，測量殘留於前述源物 質蒸發部之源物質量者，又，包含有以下步驟，即：（a)將 ® 前述源物質蒸發部之氣體壓力維持於第1壓力者；及(b)將測 量氣體供給至前述源物質蒸發部，並將前述源物質蒸發部 之氣體壓力維持於第2壓力者，又，自直到前述源物質蒸發 20 部之氣體壓力從前述第1壓力到達前述第2壓力時之測量氣 體的供給量或供給時間，測量殘留於前述源物質蒸發部之 源物質量。 在此，前述源物質蒸發部宜連結用以測量前述源物質 蒸發部之氣體壓力之機構。 200930828 又，前述測量氣體宜包含有Ar。 再者，前述源物質蒸發部宜連結用以控制所流入之測 量氣體量之機構。 發明效果 5 若藉由本發明，則於利用化學氣相沉積程序之薄膜沉 積時，可正確地測量殘留於源物質蒸發部之源物質量。 又，若藉由本發明，則可具有防止下述問題之效果， 即：因以往利用化學氣相沉積程序之薄膜沉積時無法正確 地測量殘留於源物質蒸發部之源物質量，若開放源物質蒸 10 發部，則會浪費源物質。 【實施方式3 用以實施發明之最佳形態 以下參照附圖詳細說明用以實行有關本發明之源物質 量測量方法之構造。 15 第2圖係顯示有關本發明一實施形態之源氣體供給裝 置100之構造概略圖。 源物質蒸發部110、源物質120、加熱器130、載運氣體 供給部140及閥VI至閥V5係與前述習知源氣體供給裝置10 相同，源氣體之移動度充足時，由於無需載運氣體，因此 20 亦可未設置載運氣體供給部140。使用載運氣體時，載運氣 體係依據閥VI之開關可否，有時會通過源物質蒸發部110， 有時則不會通過，然而，若考慮一般源氣體之移動度，則 宜使載運氣體通過源物質蒸發部110。 有關本發明一實施形態之源氣體供給裝置10 0之特徵 200930828 • 構造在於與源物質蒸發部110連結的氣體壓力測量機構及 氣體流量測量機構。 於本發明之一實施形態中，氣體壓力測量機構係測量 源物質蒸發部110之内部壓力以測量殘留於源物質蒸發部 5 110内之源物質量的壓力計200，該壓力計200宜使用可測量 ITorr至760Torr範圍之氣體壓力的壓力計。 又’氣體流量測量機構係控制供給至源物質蒸發部11〇 之氣體流量以測量殘留於源物質蒸發部11〇内之源物質量 ^ 的流量計3〇〇 ’流量計300宜使用以sccm(standard cc/min) 10 單位控制氣體流量之MFC(質量流量控制器，Mass Flow10 When the carrier gas is not used, valve VI and valve V3 will be closed. Further, depending on the switch of the valve VI, the carrier gas may pass through the source evaporation portion 11 and may not pass. On the other hand, in the chemical vapor deposition process, if the source quality of the source substance evaporation portion 11 is not correctly discriminated, it cannot be judged that the source material should be supplied step by step in order to perform the next deposition process. Deposition can be carried out using the remaining source material. In the case where the deposition process is performed in a state where the source material 12 is not sufficiently left in the state of the source substance evaporation portion to the extent that the next deposition process is performed, the deposition process cannot be performed normally. However, in the conventional source gas supply device 1G, the amount of the source material 12 remaining in the source substance evaporation portion 11 cannot be accurately discriminated in the thin film deposition program 20, of course, although the source substance evaporation portion u is opened before the new deposition process. The method of judging the amount of the source material 12 remaining by the naked eye is determined. However, since the active material heat generating portion 11 is opened and used, it is impossible to use it. Therefore, if the active material 12 remains in the open source evaporation portion (10), Will waste the high price of the source 200930828 • · Quality 12 . C SUMMARY OF THE INVENTION The present invention has been made in order to solve the aforementioned problems of the prior art. It is an object of the present invention to provide a method for evaporating a source material from a source material contained in an evaporation portion of a source material. In the chemical vapor deposition process in which the gas is supplied to the deposition chamber and the thin film deposition is performed, the source gas is supplied to the source material evaporation portion until the carrier gas reaches a predetermined pressure, and the supply amount of the self-loaded gas 10 is reached until the predetermined pressure is reached. Or the supply time measures the mass of the source remaining in the evaporation portion of the source material. Means for Solving the Problems In order to achieve the above object, the method of the present invention is directed to a chemical vapor deposition process for supplying a source gas evaporated from a source material contained in an evaporation portion of a source material to a deposition chamber and performing 15 film deposition. And measuring the source quality remaining in the evaporation portion of the source material, and further comprising: (a) maintaining the gas pressure of the source substance evaporation portion at the first pressure; and (b) The measurement gas is supplied to the source substance evaporation unit, and the gas pressure of the source substance evaporation unit is maintained at the second pressure, and the gas pressure from the first source pressure to the second pressure is increased from the first pressure to the second pressure. At the time, the supply amount or supply time of the gas is measured, and the mass of the source remaining in the evaporation portion of the source material is measured. Here, the source substance evaporation unit is preferably connected to a mechanism for measuring the gas pressure of the source substance evaporation unit. 200930828 Further, the aforementioned measuring gas preferably contains Ar. Further, the source substance evaporation unit is preferably connected to a mechanism for controlling the amount of the measured gas flowing in. EFFECT OF THE INVENTION According to the present invention, when the film is deposited by the chemical vapor deposition process, the mass of the source remaining in the evaporation portion of the source material can be accurately measured. Moreover, according to the present invention, it is possible to prevent the problem that the quality of the source remaining in the evaporation portion of the source material cannot be accurately measured due to the conventional film deposition by the chemical vapor deposition process, and if the source material is open source Steaming 10 hair parts will waste the source material. [Embodiment 3] Best Mode for Carrying Out the Invention Hereinafter, a configuration for carrying out a method for measuring a source substance amount according to the present invention will be described in detail with reference to the accompanying drawings. Fig. 2 is a schematic view showing the structure of a source gas supply device 100 according to an embodiment of the present invention. The source substance evaporation unit 110, the source material 120, the heater 130, the carrier gas supply unit 140, and the valve VI to the valve V5 are the same as the conventional source gas supply device 10 described above, and when the degree of mobility of the source gas is sufficient, since it is not necessary to carry the gas, 20 The carrier gas supply unit 140 may not be provided. When the carrier gas is used, whether the carrier gas system is switched according to the valve VI or not, sometimes passes through the source evaporation portion 110, and sometimes does not pass. However, if the mobility of the general source gas is considered, it is preferable to pass the carrier gas through the source. Material evaporation unit 110. Characteristics of the source gas supply device 100 according to an embodiment of the present invention 200930828 • A gas pressure measuring mechanism and a gas flow rate measuring mechanism connected to the source material evaporation unit 110. In an embodiment of the present invention, the gas pressure measuring mechanism measures the internal pressure of the source material evaporation portion 110 to measure the pressure gauge 200 of the source material remaining in the source material evaporation portion 5110, and the pressure gauge 200 should preferably be used. A pressure gauge that measures the gas pressure in the range of ITorr to 760 Torr. Further, the 'gas flow rate measuring mechanism controls the flow rate of the gas supplied to the source substance evaporation unit 11 to measure the mass of the source remaining in the source substance evaporation unit 11'. The flow meter 300 is preferably used in sccm ( Standard cc/min) 10 unit control gas flow MFC (mass flow controller, Mass Flow
Controller)。 另一方面’於源物質蒸發部110宜設置泵等排氣裝置 (未圖示），且該排氣裝置係將源物質蒸發部11〇之内部排 氣，以於測量時間點將源物質蒸發部11 〇之内部維持於預定 15 壓力，以測量殘留於源物質蒸發部110内之源物質量。 其次，參照第2圖，詳細說明有關本發明一實施形態之 ® 測量殘留於源物質蒸發部内之源物質量的過程。 首先，使設置於源物質蒸發部11〇周圍之加熱器13〇動 作，且使收納於源物質蒸發部11〇内之源物質12〇氣化。直 20到源物質蒸發部110之溫度到達源物質120之氣化溫度前， 有時會將所有閥VI至閥V5維持於封閉狀態，有時則僅開放 閥V4。 若源物質120氣化而生成源氣體，則開放閥v卜閥v2、 閥V4，並自載運氣體供給部14〇供給載運氣體，此時，載運 7 200930828 氣體係依據閥VI之開關可否，有時會通過源物質蒸發部 110’有時則不會通過，然而，若考慮一般源氣體之移動度， 則宜使載運氣體通過源物質蒸發部110。 5 15 若於源物質蒸發部110内源氣體之生成安定化，則開放 閥VI、閥V2、閥V5並進行實際之化學氣相沉積程序，即， 藉由閥V1之開放，載運氣體係流入源物質蒸發部110，接 著，若開放閥V2與閥V5，則業已於源物質蒸發部11()氣化 之源氣體係與載運氣體同時地流入沉積室，此時，相較於 利用開關來控制源氣體之流動，微細地調節配管之開度而 控制源氣體之流動是較為理想的，又，業已流入沉積室之 源氣體係藉由在配置於沉積室内部的基板上沉積而執行預 定沉積程序。 於結束沉餘序後，測量朗於源物f蒸發部n〇内之 源物質120量。 為此，開放閥V2、間V4同時封閉剩下的所有閥v卜閥 V3、間魏’使殘留於源物質蒸發部画部之源氣體排 氣至外部。此種排氣過料進行直咖物«發精内之 氣體壓力到達預定基準壓力⑻壓力）時，第m力宜設定在 數To汀之範圍，且是否業已到達第1壓力係藉由壓力計· 即時地測量，若源物質蒸 赞°PU0内之氣體壓力到達第1壓 力，則封閉閥V2、閥V4。 其次，開放閥VI並自栽埭# 此時，供給至源物質蒸 逐氧體供給部140將载運氣體供 給至第1壓力之源物質蒸發部u 發部110之載運氣體的供给、; 流量係藉由流量計3 00即時地測 20 200930828Controller). On the other hand, the source material evaporation unit 110 is preferably provided with an exhaust unit (not shown) such as a pump, and the exhaust unit exhausts the inside of the source substance evaporation unit 11 to discharge the source substance at the measurement time point. The inside of the crucible is maintained at a predetermined pressure of 15 to measure the mass of the source remaining in the source evaporation portion 110. Next, a process of measuring the mass of a source remaining in the evaporation portion of the source material according to an embodiment of the present invention will be described in detail with reference to Fig. 2. First, the heater 13 provided around the source substance evaporation unit 11 is operated, and the source material 12 stored in the source substance evaporation unit 11 is vaporized. Until the temperature of the source substance evaporation unit 110 reaches the vaporization temperature of the source material 120, all of the valves VI to V5 may be maintained in a closed state, and sometimes only the valve V4 is opened. When the source material 120 is vaporized to generate a source gas, the valve v valve v2 and the valve V4 are opened, and the carrier gas is supplied from the carrier gas supply unit 14 ,. At this time, if the gas system is carried out according to the switch of the valve VI, there is In some cases, the source substance evaporation unit 110' may not pass. However, considering the degree of mobility of the general source gas, it is preferable to pass the carrier gas through the source substance evaporation unit 110. 5 15 If the generation of the source gas in the source substance evaporation unit 110 is stabilized, the valve VI, the valve V2, and the valve V5 are opened and the actual chemical vapor deposition process is performed, that is, the carrier gas system flows in by the opening of the valve V1. The source material evaporation unit 110, when the valve V2 and the valve V5 are opened, the source gas system that has been vaporized by the source substance evaporation unit 11 () flows into the deposition chamber simultaneously with the carrier gas, and at this time, compared with the use of the switch It is preferable to control the flow of the source gas and finely adjust the opening degree of the pipe to control the flow of the source gas. Further, the source gas system that has flowed into the deposition chamber performs predetermined deposition by depositing on the substrate disposed inside the deposition chamber. program. After the end of the sinking sequence, the amount of the source material 120 which is within the evaporation portion n of the source f is measured. To this end, the open valve V2 and the intermediate V4 simultaneously close all of the remaining valves v, V3, and V, and exhaust the source gas remaining in the drawing portion of the source material evaporation portion to the outside. When such a venting material is used to control the pressure of the gas in the hair supply to the predetermined reference pressure (8), the mth force should be set in the range of the number of times, and whether the first pressure system has reached the pressure gauge. Immediately, if the gas pressure in the source material vaporization °PU0 reaches the first pressure, the valve V2 and the valve V4 are closed. Next, the valve VI is opened and the reactor is supplied. The supply of the carrier gas to the source material evaporating unit supply unit 140 supplies the carrier gas to the supply of the carrier gas of the source material evaporation unit portion 110 of the first pressure. It is measured instantaneously by the flow meter 3 00 20 200930828
塁此種載運氣體之供給過程係進行直到源物質蒸發部HO 内之氣體壓力到達預定基準壓力（第2壓力）時，第2壓力宜設 定在數百Ton·之範圍’且是否業已到達第2壓力係藉由壓力 計200即時地測量，若源物質蒸發部1_之氣體壓力到達 第2壓力，則封閉閥VI。The supply process of the carrier gas is performed until the gas pressure in the source substance evaporation unit HO reaches a predetermined reference pressure (second pressure), and the second pressure is preferably set in the range of several hundred Ton· and has reached the second The pressure is measured instantaneously by the pressure gauge 200, and if the gas pressure of the source evaporation portion 1_ reaches the second pressure, the valve VI is closed.
1010
由於流量計3 00可正確地控制平均時間通過之載運氣 體量，因此可正確地測量直到源物質蒸發部11〇内之氣體壓 力從前述第1壓力到達前述第2壓力時供給至源物質蒸發部 110之載運氣體的供給量或供給時間。根據此種流量計如〇 之測量結果，可於沉積程序後測量或預測殘留於源物質+ 發部110内之源物質120量。 … 舉例言之’在定性方面，若殘留於源物質蒸發部ΐι〇内 之源物質120量多時，則可相對地減少用以使源物質蒸發1 110内之氣體壓力從第1壓力到達第2壓力所必須之裁運二 體的供給量或供給時間，反之，若殘留於源物質;蒸發音卩丨^ 内之源物質120量少時，則可相對地增加用以使源物質+泰| 部110内之氣體壓力從第1壓力到達第2壓力所必須之栽運 氣體的供給量或供給時間。 同時，根據源物質蒸發部11〇之體積、收納於源物質蒸 發部110之源物質120之體積及直到到達預定壓力時之載運 氣體的供給量或供給時間等測量值而執行適當之計算，藉 此，可將殘留於源物質蒸發部11〇内之源物質120量定量化 第3圖係顯示有關本發明一實施形態之測量源物質量 之方法例的圖表。 20 200930828 第3圖係於第2圖之源氣體供給裝置100中，為了測量收 . 納於源物質蒸發部110内之源物質120量而開放閥VI並封閉 閥V2、閥V4後，將載運氣體供給至源物質蒸發部11〇内， ’ 並隨著源物質蒸發部110内之源物質填充量之變化，測量源 5 物質蒸發部110之氣體壓力從第1壓力到達第2壓力所花費 之時間變化。 此時，源物質120係使用Ni沉積用之Ni(CP)2粉末，載運 氣體(測量氣體)係使用Ar，供給至源物質蒸發部110内之Ar 流量係將流量計300控制成lOOsccm，第1壓力係維持於 〇 10 H>Torr，第2壓力則變化成500Torr(參照第3圖之條件 (Condition)A)、600Torr(參照第 3圖之條件B)、700丁〇订(參照 第3圖之條件C)。第1壓力及第2壓力係藉由壓力計200來測 量’源物質蒸發部110内之Ni(CP)2粉末之填充量係變化成 〇g、l〇g、30g ' 50g、100g、150g、200g。 15 如圖式所示’收納於源物質蒸發部110内之源物質120 量越多’源物質蒸發部110之氣體壓力從第1壓力（10T〇rr)到 達第2壓力（5〇〇Torr、600Torr、700Torr)所花費之Ar的供給 ® 時間會減少，特別是如第3圖所示，可知隨著前述填充量之 變化，供給時間會呈線形地變化，因此，若藉由有關前述 20 本發明—實施形態之方法，則於化學氣相沉積程序時，可 正確且有效地測量殘留於源物質蒸發部内之源物質量。 另一方面，前述壓力計200、流量計300及閥V1至閥V5 所有之作動過程可藉由控制部（未圖示）來控制，同時可藉由 该控制部來測量殘留於源物質蒸發部110内之源物質12 0 10 200930828 若藉由前述源氣體供給方法，則可具有以下優點，艮 於利用化學氣相沉之薄膜沉積時，可正確_量 於源物質蒸發部110之源物質12〇量，因此，可防止里 知技藝之m由於無法正確地掌握殘 發部110之源物質120量，故開放源物質蒸發部11〇，依此二、 浪費源物質120。同時’可防止以下狀況，# :由於在^會Since the flow meter 300 can correctly control the amount of carrier gas passing through the average time, it can be accurately measured until the gas pressure in the source substance evaporation portion 11 is supplied to the source material evaporation portion from the first pressure to the second pressure. The supply amount or supply time of the carrier gas of 110. According to the measurement results of such a flow meter such as 〇, the amount of the source material 120 remaining in the source material + portion 110 can be measured or predicted after the deposition process. ... For example, in the qualitative aspect, if the amount of the source material 120 remaining in the evaporation portion of the source material is large, the gas pressure for evaporating the source material within 1 110 can be relatively reduced from the first pressure to the first pressure. 2 The supply or supply time of the two bodies required for the pressure, and vice versa, if it remains in the source material; when the amount of the source material 120 in the evaporation sound is small, it can be relatively increased to make the source material + Thai The supply pressure or supply time of the plant gas necessary for the gas pressure in the portion 110 to reach the second pressure from the first pressure. At the same time, appropriate calculation is performed based on the volume of the source substance evaporation unit 11〇, the volume of the source substance 120 accommodated in the source substance evaporation unit 110, and the supply amount or supply time of the carrier gas until the predetermined pressure is reached, and the appropriate calculation is performed. Thus, the amount of the source material 120 remaining in the source substance evaporation portion 11A can be quantified. Fig. 3 is a graph showing an example of a method for measuring the mass of the source material according to an embodiment of the present invention. 20 200930828 Fig. 3 is a diagram of the source gas supply device 100 of Fig. 2, in order to measure the amount of the source material 120 received in the source substance evaporation unit 110, open the valve VI, close the valve V2, and the valve V4, and then carry it. The gas is supplied into the source substance evaporation unit 11A, and the gas pressure of the source 5 substance evaporation unit 110 is measured from the first pressure to the second pressure as the source material filling amount in the source substance evaporation unit 110 changes. Change of time. At this time, the source material 120 is Ni (CP) 2 powder for Ni deposition, the carrier gas (measurement gas) is Ar, and the Ar flow rate supplied to the source substance evaporation unit 110 is controlled to be 100 sccm. 1) The pressure system is maintained at 〇10 H> Torr, and the second pressure is changed to 500 Torr (see Condition A in Table 3), 600 Torr (see Condition B in Fig. 3), and 700 〇 (see 3rd) Figure C). The first pressure and the second pressure are measured by the pressure gauge 200. The filling amount of the Ni(CP) 2 powder in the source substance evaporation unit 110 is changed to 〇g, l〇g, 30g '50g, 100g, 150g, 200g. As shown in the figure, 'the more the amount of the source material 120 accommodated in the source substance evaporation unit 110', the gas pressure of the source substance evaporation unit 110 reaches the second pressure (5 Torr, from the first pressure (10T rrrr), The supply time of Ar consumed by 600 Torr and 700 Torr is reduced. In particular, as shown in Fig. 3, it can be seen that the supply time changes linearly with the change in the amount of filling. Therefore, if the above-mentioned 20 The invention - the method of the embodiment, can accurately and effectively measure the mass of the source remaining in the evaporation portion of the source material during the chemical vapor deposition process. On the other hand, all the operations of the pressure gauge 200, the flow meter 300, and the valves V1 to V5 can be controlled by a control unit (not shown), and the residual portion of the source material evaporation portion can be measured by the control portion. Source material in 110 12 0 10 200930828 If the source gas supply method is used, the following advantages can be obtained, and when the film deposition by chemical vapor deposition is used, the source material 12 of the source substance evaporation portion 110 can be correctly measured. Since the amount of the material is reduced, it is possible to prevent the source material 120 from being able to accurately grasp the amount of the source material 120 of the residual portion 110. Therefore, the source substance evaporation portion 11 is opened, and the source material 120 is wasted. At the same time, the following conditions can be prevented, #: because at ^
10 質120並未於執行-批次沉積程序之程度下殘留於源2 蒸發部110的狀態中進行沉積程序，因此會產生程序質 (fail)。 失誤 產業之可利用性 若藉由本發明，則可於利用化學氣相沉積程序之薄膜 沉積時，正確地測量殘留於源物質蒸發部之源物質量，又， 可防止下述習知技藝之缺點，即：由於在利用化學氣相沉 15積程序之薄旗沉積時無法正確地測量殘留於源物質蒸發部 之源物質量，故開放源物質蒸發部，依此會浪費源物質， 故，本發明之產業利用性可以說是極高的。 如前所述，本發明係藉由限定具體之構成要素等特定 事項之實施形態及圖式來說明，然而，此係提供用以幫助 20本發明更整體之理解，本發明並不限於前述實施形態，只 要是本發明所屬技術領域中具有通常知識者，即可自此種 揭示進行多種修正及變形。 故，本發明之思想不限於在此所說明之實施形態，不 僅是後述申請專利範圍，只要是具有與該申請專利範圍均 11 200930828 等或等價之變形者皆屬本發明之思想及範疇。 - 【圖式簡單說明3 第1圖係顯示有關習知技藝之源氣體供給裝置之構造 概略圖。 5 第2圖係顯示有關本發明一實施形態之源氣體供給裝 置之構造概略圖。 第3圖係顯示有關本發明一實施形態之測量源物質量 之方法例的圖表。 【主要元件符號說明】 © 10，100…源氣體供給裝置 14，140…載運氣體供給部 11，110…源物質蒸發部 200...壓力計 12，120…源物質 300…流量計 13，130·.·加熱器 VI，V2，V3，V4，V5..·閥The mass 120 does not remain in the state of the source 2 evaporation portion 110 at the extent of the execution-batch deposition process, and thus a procedure is generated. According to the present invention, the quality of the source remaining in the evaporation portion of the source material can be accurately measured when the film is deposited by the chemical vapor deposition process, and the disadvantages of the following conventional techniques can be prevented. That is, since the source material remaining in the evaporation portion of the source material cannot be accurately measured during the deposition of the thin flag using the chemical vapor deposition process, the source evaporation portion is opened, thereby consuming the source material, so The industrial utilization of the invention can be said to be extremely high. As described above, the present invention has been described with reference to the specific embodiments and the specific aspects of the specific components and the like. However, this is to provide a more complete understanding of the present invention, and the present invention is not limited to the foregoing implementation. The present invention can be variously modified and modified as long as it is a person having ordinary knowledge in the art to which the present invention pertains. Therefore, the present invention is not limited to the embodiments described herein, and is not limited to the scope of the invention as set forth below, and is intended to be within the spirit and scope of the invention. - [Simple diagram of the drawing 3 Fig. 1 is a schematic view showing the structure of a source gas supply device for a conventional technique. Fig. 2 is a schematic view showing the structure of a source gas supply device according to an embodiment of the present invention. Fig. 3 is a graph showing an example of a method for measuring the mass of a source according to an embodiment of the present invention. [Description of main component symbols] © 10,100... source gas supply device 14, 140... carrier gas supply unit 11, 110... source material evaporation unit 200... pressure gauge 12, 120... source material 300... flow meter 13, 130 ···Heater VI, V2, V3, V4, V5..·Valve
1212
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070127860A KR100951683B1 (en) | 2007-12-10 | 2007-12-10 | Method For Supplying Source Gas |
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| TW200930828A true TW200930828A (en) | 2009-07-16 |
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| JP (1) | JP5302642B2 (en) |
| KR (1) | KR100951683B1 (en) |
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| JP4209688B2 (en) * | 2001-05-24 | 2009-01-14 | セレリティ・インコーポレーテッド | Method and apparatus for supplying a determined ratio of process fluid |
| JP2004111787A (en) * | 2002-09-20 | 2004-04-08 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP2005079141A (en) * | 2003-08-28 | 2005-03-24 | Asm Japan Kk | Plasma cvd system |
| JP4626956B2 (en) * | 2004-10-18 | 2011-02-09 | 東京エレクトロン株式会社 | Semiconductor manufacturing apparatus, liquid quantity monitoring apparatus, liquid material monitoring method for semiconductor manufacturing apparatus, and liquid quantity monitoring method |
| KR100599058B1 (en) * | 2005-03-15 | 2006-07-12 | 삼성전자주식회사 | Method and apparatus for measuring level of liquid, and apparatus for manufacturing a semiconductor device having the same |
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| KR100951683B1 (en) | 2010-04-07 |
| KR20090060883A (en) | 2009-06-15 |
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