21433twf.doc/p 200926865 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種虔變電容農 一種具有低彈簧係數結構之壓變電容 & ’且特別是有關於 度與變形量的效能。 置其具有高靈敏 【先前技術】 電谷式麥克風晶片以發微如^ ❹ 製程技術整合而成之壓變電|與積體電路(1C)21433twf.doc/p 200926865 IX. Description of the Invention: [Technical Field] The present invention relates to a varistor capacitor farm having a low spring constant structure and a pressure-variable capacitor & 'and particularly related to degree and deformation Performance. It is highly sensitive. [Prior Art] The electric valley microphone chip is integrated with the micro-voltage technology, and the integrated circuit (1C)
Transducer)，具有質詈隹、與拉， 各裝置（Acoustic ’，、负貝里驻體積小、訊號品暂杜妨 在民生家電產品應用上，由於手搂 質佳等優點， 發展電今式麥克風曰曰片已經漸漸成 ，就市場的角度而言’根據Digitimes公司二 中關於订動電話手機部分，懸2_年北美麥克風晶片 (Microphone Chips)市場，將達五億個之水準，而從2〇〇4 年到漏料特㈣％畅市場狱成長。手機上之麥 克風之應用屬於目前市場上之主流。 由於以矽為基材的積體電路製程較便宜大量地使用於 電子產品中，及其應用領域不斷的向外擴張，將来更有大 量的應用會以石夕為基材的製程製作，並搭配匸厘^^製程將 讀取電路直接整合於一顆晶片上，加上台灣已成為全球第 一大半導體代工廠約為目前市場之6〇〜70%的代工率’將來 勢必可量產並加速其商品化時程。因此若在麥克風的佈局 上’要避開與區隔各家大廠的元件設計，必須先取得元件 5 21433twf.doc/p 200926865 端的新穎設計與製造先機，才能臝得在麥克風元件市場上 的優勢’與瓜分佔有率的能力。 目前麥克風元件結構之應用在產品的量產上，僅限於 少許幾種的結構，這也是由於目前踏入 MEMS(Microelectromechanical Systems)麥克風的廠商只有 少奸數幾豕廠商之故’如Knowles公司、Infineon公司或是 Sonion公司等’而市面上大部分的封裝方式仍以Kn〇wles ❹ 開發的設計為主。 請參照圖1到圖3 ’其繪示Knowles公司之麥克風結構 設計。此壓變電容裝置(Acoustic Transducer) 10包括導電薄 膜（Conductive Diagram)12 與具有穿孔之構件（Perforated Member)40，由基底30所支撐，而藉由空氣間隙(Air Gap)2〇 所隔離。而一個非常薄的空氣間隙22則存在導電薄膜12與 基底30之間，以便讓此薄膜12能夠自由地上下移動，以便 減輕薄膜材質内在之應力(Intrinsic Stress)，並且使薄膜12 從基底30減少震動（Decouple)。而許多的突起 ❿ （Indentation)13則形成於薄膜12之下’以避免薄膜12與基底 30之間的碰撞。 "薄膜12的橫向移動被構件4〇之支持部41所限制，而此 可當成是薄膜12與構件40之間適當的啟始空間，而此支持 部41可以是圓環(Ring)構造或是許多凸塊(Bump)構造。若 支持部41是圓環構造，則當薄膜12靠在支持部41上時，則 會形成緊密的聲音密封空間，會導致壓變電容裝置具有控 制非常好的低頻下降率(Roll_off)。薄膜12與基底30^間具 6 21433twf.doc/p 200926865 有個介電層31。而導電電極(c〇nducting Electrode)42是固 疋在不導電之構件40下。而此構件4〇具有數個孔洞21，而 薄膜12也有數個孔洞，用以與構件4〇之孔洞21形成聲音流 動之通路14。Transducer), with quality and pull, each device (Acoustic ', negative bust small volume, signal products temporarily in the application of Minsheng home appliances, due to the advantages of good hand quality, development of electric microphone The film has gradually become a market, from the perspective of the market, according to the Digitimes company's second part of the mobile phone handset, the 2 years of the North American microphone chip (Microphone Chips) market will reach 500 million standards, and from 2 〇〇 4 years to the leaked special (four)% Chang market prison growth. The application of the microphone on the mobile phone is currently the mainstream in the market. Because the integrated circuit process based on 矽 is cheaper and more widely used in electronic products, and Its application field continues to expand outward. In the future, a large number of applications will be produced on the basis of Shi Xi as a substrate, and the read circuit will be directly integrated on a single wafer with the process of adding a process. Becoming the world's largest semiconductor foundry is about 6~70% of the current market's foundry rate. 'In the future, it will be able to mass-produce and accelerate its commercialization time. So if you want to avoid the area on the microphone layout The component design of each major manufacturer must first acquire the novel design and manufacturing opportunities of the component 5 21433twf.doc/p 200926865, in order to bare the advantage in the microphone component market' and the ability to divide the occupancy. The current microphone component structure The application in the mass production of the product is limited to a few structures, which is also due to the fact that the manufacturers that are currently entering the MEMS (Microelectromechanical Systems) microphones are only a few sellers, such as Knowles, Infineon or Sonion. Most of the packaging methods on the market are still based on the design developed by Kn〇wles 。. Please refer to Figure 1 to Figure 3 for the design of the microphone structure of Knowles. This pressure-variable capacitor device (Acoustic Transducer) 10 includes a conductive film 12 and a perforated member 40 supported by the substrate 30 and separated by an air gap (Air Gap) 2, while a very thin air gap 22 exists. Between the conductive film 12 and the substrate 30, the film 12 can be freely moved up and down to reduce the inherent material of the film. Intrinsic Stress, and the film 12 is decoupled from the substrate 30. A plurality of protrusions 13 are formed under the film 12 to avoid collision between the film 12 and the substrate 30. The lateral movement of the film 12 is limited by the support portion 41 of the member 4, which can be regarded as a suitable starting space between the film 12 and the member 40, and the support portion 41 can be a ring structure or many Bump construction. If the support portion 41 has a ring structure, when the film 12 abuts against the support portion 41, a tight sound sealing space is formed, which causes the pressure variable capacitance device to have a very good low frequency drop rate (Roll_off). There is a dielectric layer 31 between the film 12 and the substrate 30. 6 21433twf.doc/p 200926865. The conductive electrode 42 is fixed under the non-conductive member 40. The member 4 has a plurality of holes 21, and the film 12 has a plurality of holes for forming a path 14 for sound flow with the holes 21 of the member 4.
Knowles公司之麥克風結構設計主要是針對背板(back plate)的指撐式結構設計，來增加背板的強度，以減少背板 阻抗。而薄膜(Membrane)採減少殘留應力（residuai stress) ❹ 的設計方式，採取一般的圓形薄膜設計。薄膜僅做於簡單 的支撐，其結構雖能避免殘留應力的問題與較高之自然頻 率響應，但是其設計的有效變形量與靈敏度仍尚嫌不足。 請參照圖4 ’其緣示Knowles公司之另一麥克風結構言免 a十。基本上與圖ι_3之結構雷同，唯一的差異是此薄膜12 是藉由數個彈簧結構(Spring) 11連接到基底3 〇之上，以便減 輕薄膜内在應力(Intrinsic Stress)，以及從基底3〇或是裝置 封裝後所產生的應力。 傳統麥克風元件設計採用簡單固定的薄膜設計，雖然 有增加薄膜靈敏度的設計方法，如指撐式(Finger)結構，請 參照圖5所示，其中薄膜510具有指撐之結構。或者是皺摺 式(corrugated)結構，請參照圖6所示，其中薄膜610具有皺 摺之結構。但是大部分的設計皆有其缺點，指撐式的薄膜， 其薄膜較軟較為靈敏’但是卻是具較低的共振頻率響應， 而且易於斷裂。皺摺式薄膜設計，雖可以有效降低殘留應 力的影響’使薄膜靈敏度變的較大’但是其製程較複雜， 加工不易，且增加靈敏度有限。 7 21433twf.doc/p 200926865 【發明内容】 本發明提出一種具有壓變電容裝置，其具有創新的薄 膜設§十圖开>與結構’可藉由支樓結構(SUpp0rt structure)即 可製作出類似彈簧般的結構效應，而增加薄膜的靈敏度。 本發明提出一種具有壓變電容裝置，利用彈簧結構概 念，在感測基板上製作特殊的結構可與薄膜的突起結構當 支撐，架構出類似懸臂(Cantilever Beam)彈簧的結構，以提 升麥克風的性能。 本發明提出之壓變電容裝置，包括薄膜與背板。在薄 膜與背板之間至少具有一突起結構，而背板則為挖空之結 構，此薄膜與背板相互平行，而挖空之結構具至少一懸臂 結構。此突起結構與懸臂結構形成支撲體，當一壓力傳輸 至薄膜時，突起結構會與懸臂結構接觸，而因突起結構的 下壓而產生形變，薄膜因此而有位移之變形量，電容之電 場分佈於薄膜與背板四周之間。此突起結構可形成於上述 薄膜表面或是懸臂結構之表面上。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 本發明提出一種具有壓變電容裝置，其具有創新的薄 膜設計圖形與結構，可藉由支撐結構(Supp〇rt Structure^p 可製作出類似彈簧般的結構效應，而增加薄膜的靈敏度。 而利用彈簧結構概念，在感測基板上製作特殊的結構可與 8 21433twf.doc/p 200926865 溥膜的突起結構當支撐’架構出類似懸臂(Cantilever Beam) 彈簧的結構，以提升麥克風的性能。 利用基板層製造出彈簧支撐結構的概念，在突起支撐 與彈性體結構的部分’皆與習知現有之技術，例如charles Stark Draper Lab.與Knowles公司所提出之結構不同。 Charles Stark Draper Lab.所提出是具有拉撐式的彈簧結構 設計’而Knowles公司所提出的是不具有支撐彈簧的結構 設計。另外，本發明所提出具有壓變電容裝置，基板中間 具有一挖空結構，如此不需要傳統之多個孔徑面積相當小 的音孔(Acoustic hole)，因此可大幅降低製程上的困難度， 並減少感測時震度阻尼(Damping)所產生的干擾(N〇ise)問 題。此新型的彈簧結構設計，將會有效地增加薄膜的靈敏 度，有助於達到結構簡易，低干擾且低殘留應力的目的。 而本發明所提出的壓變電容裝置，目的在於提供一個創新 且結構簡易的聲音傳送感測器，同時有效的增加薄膜位移 量的大小’並且電容感測的訊號輸出有更大的效能。 本發明所提出之一種壓變電容裝置結構組成，包括基 板（Substrate)與其上之背板（Biack piate)與薄膜 (Diaphragm)。其中基板與背板之平板結構上不需要多個音 孔(Acoustic hole)，只需要一個挖空結構，挖空結構的四周 為電容感測的表面。在背板的挖空結構上具有背板所延伸 特殊的懸臂(Cantilever Beam)結構設計。而在薄膜與背板之 間具有單一或多個突起（Indentation)結構，作為薄膜支樓 之用。而每一個懸臂結構與突起結構形成一組類似彈簧效 21433twf.doc/p 200926865 應的彈性體，於薄膜與背板之間將有多組類 彈性體結構，稱之為懸臂彈性體。 職 當壓力傳送薄膜時’薄膜會產生變形，而薄膜盘背板 之間的突起結構以及懸臂結構之間，會因為突起結構的壓 力影響而大幅變形，此時薄膜平板會因此而產生上下位移 的變形，如此將會增加兩平板間的變形與位移量，也增加 了平板_電容變化值，此輯將大大增加薄_靈敏度 ❺ 與線性度。而麥克風的薄膜與背板間的電容變化，是利用 薄膜與基板挖空結構四周平板感測其間的電容值，電容訊 號將藉由導電設計將感測之訊號傳送出去。 本發明所提出之一種壓變電容裝置，可應用於壓力感 測器、加速度感測器或超聲波感測器之封裝等等裝置上。 而上述之形變薄膜傳感單元以及背板結構可以使用 一個或多個材料所組成，包括以碳為基質之聚合物 (Carbon-based polymers)、石夕（Silicon)、氮化矽（Silicon nitride),複晶石夕（Polycrystalline silicon)、非晶石夕 ❹ （Amorphous silicon)、二氧化矽(Silicon dioxide)、碳化矽 (Silicon carbide)、鍺(Germanium)、鎵(Gallium)、砷化物 (Arsenide)、碳(Carbon)、鈦(Titanium)、金(Gold)、鐵(Iron)、 銅(Copper)、鉻(Chromium)、鎢(Tungsten)、鋁(Aluminum)、 銘(Platinum)、鎳(Nickel)、组(tantalum)或其合金等等。 本發明所提出由懸臂結構與突起結構形成類似彈簧 效應的懸臂彈性體之壓變電容裝置，其架構在一實施例中 請參照圖7所示。在基板(substrate)710上具有兩層平行板 21433twf.doc/p 200926865 的結構’-為背板(back Plate)72G，而另以—為感測之薄膜 (Memb麵)730。基板710之平板結構上不需要多個音孔 (Acoustic hole)，只需要一個挖空結構712，挖空結構712 的四周為電容感測的表面。在基板71〇的挖空結構712上 具有为板720所延伸特殊的懸臂(Cantilever Beam)結構724 設計。此懸臂結構724可以是任何形式的延伸構造，只要 能提供上下形變的結構皆適用於本發明懸臂之結構，例如 橋狀結構等等。 而薄膜730表面上具有單一或多數個突起(Indentati〇n) 結構732 ’將作為薄膜730支撐之用，以便在薄膜730變 形時能與背板結構720接觸而產生更大的變形量。如前所 述’在另外選擇實施例中，此單一或多數個突起(Indentati〇n) 結構732也可形成於懸臂結構724上，並非受限於此。此 突起結構732高度係決定背板結構72〇與薄膜73〇之平行 間距。在圖7之實施例中’突起結構732與背板結構720 相連接是當壓力傳送薄膜730時，薄膜730會產生變形， 而薄膜730的突起結構732將與背板720所延伸的懸臂結 構724相接觸後，懸臂結構724會因為突起結構的壓力影 響而大幅變形，而此時薄膜730也會因應施以的壓力而變 形’如圖7所示，此時薄膜730會因此而產生上下位移的 變形，而將增加薄膜730與背板結構720之間的變形與位 移量，也增加了兩平板間的電容變化值。 前述提及基板710之挖空結構712四周為電容感測的 表面，如圓7所示，一導電層722鋪設於挖空結構712的 11 21433twf.doc/p 200926865 四周，也就是背板結構720之表面而面對薄膜 730之一面 734 ’以形成錢電容裝置内電容之電場區域。 本發明所提丨由料結構與突起結構形成類似彈簧 效應的懸臂彈性體之壓變電容裝置，其架構在另一實施例 中請參照圖8所示。此結構與圖7之差異在於基板71〇上 兩層平行板的位置。圖7的背板，姆於垂直基板71〇 向上的方向位於下方’而薄膜73〇位於上方。為方便說明， ❹相同元制以相同之標號表示。圖8的實施例中，薄膜 73〇面對背板720的表面上具有一個或多數個突起結構 732 ’將作為薄膜730支撐之用，以便在薄膜73〇變形時能 與背板結構720接觸而產生更大的變形量。 在圖8之實施例中，突起結構732與背板結構72〇相 連接是當壓力傳送薄膜730時，薄膜730的突起結構732 將與背板720所延伸的懸臂結構724相接觸後，懸臂結構 724會因為突起結構的壓力影響而大幅變形，而此時薄膜 730也會因應施以的壓力而變形，如此將增加薄膜73〇與 ❹ 旁板結構720之間的變形與位移量，也增加了兩平板間的 電容變化值。在此實施例中，導電層722鋪設於背板結構 720之表面而面對薄膜73〇之一面734,以形成壓變電容裝 置内電容之電場區域。如前所述，在另外選擇實施例中， 此單一或多數個突起(Indentation)結構732也可形成於懸 臂結構724上，並非受限於此。 在又一實施例中，請參考圖9所示，主要是說明本發 明所提出由懸臂結構與突起結構形成類似彈簧效應的懸臂 12 21433twf.do〇/p 200926865 彈性，之壓變電容裝置結構侧視圖。在基板910上具有兩 層平灯板的結構’―為背板·，而另以—為感測之薄膜 930。基板910之平板結構上至少具有一個挖空結構，挖空 結構的四周為電容感測的表面。在基板遍的挖空結構上 具有背板觀伸料㈣臂(Cantilevef Beam)結構設計。此 懸臂結構可以是任何形式的延伸構造，只要能提供上下形 變的結構皆適用於本發㈣臂之結構，例如橋狀結構^ ❹ 等。而薄膜930則具橋狀之彈性結構圖案932，如圖9所 ^，而薄膜930面對背板92()之表面上具有單一或多數個 突起(Indentation)結構，將作為薄膜支撐之用，以便在薄 膜變形時能與背板結構92G接觸而產生更大的變形量。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 ® 圖1〜圖3是習知之麥克風結構設計。 圖4是另一種習知之麥克風結構設計。 圖5是習知麥克風結構中一種具有指撐式(Finger)結 構之薄膜設計。 圖6是習知麥克風結構中一種具有皺摺 結構之薄膜設計。 圖7是說明本發明較佳實施例之由懸臂結構與突起結 構形成彈簧效應的懸臂彈性體之麗變電容裝置結構示竟 13 200926865 21433twf.doc/p 圖。 圖8是說明本發明另一較佳實施例之由懸臂結構與突 起結構形成彈簧效應的懸臂彈性體之壓變電容裝置結構示 意圖。 圖9是說明本發明另一較佳實施例之由懸臂結構與突 起結構形成彈簣效應的懸臂彈性體之壓變電容裝置結構側 視圖。 【主要元件符號說明】 ® 10:壓變電容裝置 12 :導電薄膜(Conductive Diagram) 40 :具有穿孔之構件(Perforated Member) 30 :基底 20、22 ··空氣間隙(Air Gap) 41 :支持部 31 :介電層 11 :彈簧結構(Spring) ❹ 510、610 :薄膜 710 :基板(substrate) 712 :挖空結構 720 :背板(back plate) 722 :導電層 724 :懸臂結構 730 :薄膜(Membrane) 732 :突起結構 14 21433tw£doc/p 200926865 910 :基板(substrate) 920 :背板(back plate) 930 :薄膜(Membrane) 932 :彈性結構圖案Knowles' microphone structure design is primarily designed for the finger-back structure of the back plate to increase the strength of the backplane to reduce backplane impedance. The Membrane adopts a design method that reduces the residual stress (residuai stress) and adopts a general circular film design. The film is only used for simple support. Although its structure can avoid residual stress and high natural frequency response, the effective deformation and sensitivity of the design are still insufficient. Please refer to Figure 4' for another reason that Knowles's other microphone structure is a ten. Basically the same as the structure of Fig. 3, the only difference is that the film 12 is connected to the substrate 3 by a plurality of spring structures 11 to reduce the intrinsic stress of the film, and from the substrate 3〇. Or the stress generated after the device is packaged. Conventional microphone components are designed with a simple fixed film design. Although there are design methods to increase the sensitivity of the film, such as a finger structure, please refer to FIG. 5, in which the film 510 has a structure of a finger. Or a corrugated structure, as shown in Fig. 6, wherein the film 610 has a corrugated structure. However, most of the designs have their shortcomings. The finger-type film has a softer and more sensitive film but has a lower resonance frequency response and is prone to breakage. The wrinkle film design can effectively reduce the influence of residual stress, which makes the film sensitivity larger. However, the process is complicated, the processing is difficult, and the sensitivity is limited. 7 21433twf.doc/p 200926865 SUMMARY OF THE INVENTION The present invention provides a device having a pressure-variable capacitance, which has an innovative thin film design and a structure can be fabricated by a SUPP0rt structure. Similar to the spring-like structural effect, increasing the sensitivity of the film. The invention provides a device with a pressure-variable capacitance. The spring structure concept is used to make a special structure on the sensing substrate and can be supported by the protruding structure of the film, and a structure similar to a cantilever beam spring is constructed to improve the performance of the microphone. . The pressure variable capacitance device proposed by the invention comprises a film and a back plate. There is at least one protruding structure between the film and the backing plate, and the backing plate is a hollowed out structure, the film and the backing plate are parallel to each other, and the hollowed out structure has at least one cantilever structure. The protruding structure and the cantilever structure form a baffle body. When a pressure is transmitted to the film, the protruding structure is in contact with the cantilever structure, and the deformation is caused by the pressing of the protruding structure, and the film thus has a displacement amount, and the electric field of the capacitor Distributed between the film and the back of the backsheet. The protruding structure may be formed on the surface of the above film or on the surface of the cantilever structure. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] The present invention provides a pressure-variable capacitance device having an innovative film design pattern and structure, which can be fabricated by a support structure (Supp〇rt Structure^p can produce a spring-like structural effect) Sensitivity. Using the spring structure concept, a special structure can be fabricated on the sensing substrate to be used with the protrusion structure of the 21 433 433 433 26 26 26 26 26 26 26 26 26 架构 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升 提升Performance. The concept of using a substrate layer to create a spring-loaded structure, both in the portion of the protrusion support and the elastomeric structure, is different from conventional techniques such as Charles Stark Draper Lab. and Knowles. Charles Stark Draper Lab The proposed spring structure design has a pull-up type and the Knowles company proposes a structural design without a support spring. In addition, the present invention proposes a pressure-variable capacitor device with a hollowed-out structure in the middle of the substrate, so A conventional acoustic aperture with a relatively small aperture area is required, so The difficulty in low process, and reduce the interference caused by the damping of the damping during the sensing. This new spring structure design will effectively increase the sensitivity of the film and help to achieve a simple structure. The purpose of low interference and low residual stress. The pressure variable capacitance device proposed by the present invention aims to provide an innovative and simple sound transmission sensor, and at the same time effectively increase the amount of film displacement 'and capacitance sensing The signal output of the present invention has a greater performance. The structure of the pressure variable capacitance device of the present invention comprises a substrate (Substrate) and a back plate and a film (Diaphragm). The plate structure of the substrate and the back plate There is no need for multiple Acoustic holes, only one hollow structure is needed. The surrounding of the hollowed out structure is a capacitive sensing surface. On the hollowed out structure of the backing plate, there is a special cantilever extended by the backing plate (Cantilever Beam) Structural design. There is a single or multiple Indentation structure between the film and the back sheet, which is used as a film support. Each cantilever knot Forming a set of elastomers similar to the spring structure 21433 twf.doc/p 200926865, there will be multiple sets of elastomeric structures between the film and the backsheet, called cantilever elastomers. The film will be deformed, and the protrusion structure between the film disk back plate and the cantilever structure will be greatly deformed due to the pressure of the protrusion structure. At this time, the film plate will be deformed up and down, which will increase two. The amount of deformation and displacement between the plates also increases the plate_capacitance change value, which will greatly increase the thinness _ sensitivity ❺ and linearity. The capacitance change between the film and the back plate of the microphone is measured by the capacitance between the film and the substrate surrounding the hollowed out structure. The capacitive signal will transmit the sensed signal through the conductive design. The pressure variable capacitance device proposed by the invention can be applied to a device such as a pressure sensor, an acceleration sensor or an ultrasonic sensor package. The deformation film sensing unit and the backing plate structure described above may be composed of one or more materials, including carbon-based polymers, Silicon, and silicon nitride. , Polycrystalline silicon, Amorphous silicon, Silicon dioxide, Silicon carbide, Germanium, Gallium, Arsenide , Carbon, Titanium, Gold, Iron, Copper, Chromium, Tungsten, Aluminum, Platinum, Nickel , group (tantalum) or its alloys, and the like. The present invention proposes a pressure-variable capacitance device of a cantilever elastomer which is similar to a spring effect by a cantilever structure and a protruding structure, and its structure is shown in Fig. 7 in an embodiment. The structure of the two parallel plates 21433twf.doc/p 200926865 on the substrate 710 is a back plate 72G, and the other is a sensing film (Memb face) 730. The slab structure of the substrate 710 does not require a plurality of acoustic holes, and only one hollow structure 712 is needed. The periphery of the hollow structure 712 is a capacitive sensing surface. On the hollowed out structure 712 of the substrate 71, there is a special cantilever beam structure 724 designed to extend the plate 720. The cantilever structure 724 can be any form of extended configuration, as long as the structure providing the upper and lower deformation is suitable for the structure of the cantilever of the present invention, such as a bridge structure or the like. On the other hand, a single or a plurality of protrusions 732' on the surface of the film 730 will be supported as the film 730 so as to be in contact with the backing plate structure 720 when the film 730 is deformed to produce a larger amount of deformation. As previously described, in alternative embodiments, the single or plurality of protrusions 732 may also be formed on the cantilever structure 724, without being limited thereto. The height of the raised structure 732 determines the parallel spacing of the backing plate structure 72A and the film 73A. In the embodiment of FIG. 7, the protrusion structure 732 is coupled to the backing plate structure 720 such that when the film 730 is pressure-transferred, the film 730 is deformed, and the protrusion structure 732 of the film 730 and the cantilever structure 724 extending from the back plate 720. After contact, the cantilever structure 724 will be greatly deformed due to the pressure of the protruding structure, and at this time, the film 730 will also be deformed according to the pressure applied as shown in Fig. 7, at which time the film 730 will be displaced up and down. The deformation, which will increase the amount of deformation and displacement between the film 730 and the backing plate structure 720, also increases the value of the capacitance change between the two plates. The aforementioned hollowed out structure 712 of the substrate 710 is a capacitively sensed surface. As shown by the circle 7, a conductive layer 722 is laid around the 11 21433 twf.doc/p 200926865 of the hollowed out structure 712, that is, the back plate structure 720. The surface faces a face 734' of the film 730 to form an electric field region of the capacitance within the capacitor device. According to the present invention, a pressure-variable capacitance device of a cantilever elastomer which is similar to a spring effect is formed by a material structure and a protruding structure, and its structure is shown in Fig. 8 in another embodiment. The difference between this structure and Fig. 7 lies in the position of the two parallel plates on the substrate 71. The back sheet of Fig. 7 is located below the vertical substrate 71 in the upward direction and the film 73 is positioned above. For convenience of explanation, the same elements are denoted by the same reference numerals. In the embodiment of Figure 8, the film 73A has one or more raised features 732' on the surface facing the backing plate 720 that will serve as a support for the film 730 to contact the backing plate structure 720 when the film 73 is deformed. Produces a greater amount of deformation. In the embodiment of FIG. 8, the protrusion structure 732 is connected to the back plate structure 72A. When the pressure transmission film 730 is used, the protrusion structure 732 of the film 730 will contact the cantilever structure 724 extended by the back plate 720, and the cantilever structure 724 will be greatly deformed due to the pressure of the protruding structure, and at this time, the film 730 will also be deformed according to the applied pressure, which will increase the amount of deformation and displacement between the film 73〇 and the side plate structure 720, and also increase The change in capacitance between the two plates. In this embodiment, the conductive layer 722 is laid on the surface of the backplane structure 720 to face one side 734 of the film 73 to form an electric field region of the capacitance within the voltage variable capacitance device. As previously mentioned, in alternative embodiments, the single or plurality of indentation structures 732 may also be formed on the cantilever structure 724, without being limited thereto. In another embodiment, please refer to FIG. 9 , which mainly illustrates the cantilever structure 12 21433 twf.do〇/p 200926865 elastically formed by the cantilever structure and the protruding structure, and the structure side of the pressure variable capacitance device is proposed. view. The structure </ RTI> having a two-layer flat panel on the substrate 910 is a back sheet, and the other is a sensing film 930. The flat structure of the substrate 910 has at least one hollowed out structure, and the periphery of the hollowed out structure is a capacitive sensing surface. On the hollowed out structure of the substrate, there is a structural design of the cantilever beam. The cantilever structure can be any form of extension structure, as long as the structure capable of providing up and down deformation is suitable for the structure of the arm of the present invention, such as a bridge structure. The film 930 has a bridge-like elastic structure pattern 932, as shown in FIG. 9, and the film 930 has a single or a plurality of indentation structures on the surface of the back plate 92 (), which will serve as a film support. In order to contact the backing plate structure 92G when the film is deformed, a larger amount of deformation is generated. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. [Simple Description of the Drawings] ® Figures 1 to 3 are conventional microphone structure designs. Figure 4 is another conventional microphone structure design. Figure 5 is a film design having a finger structure in a conventional microphone structure. Figure 6 is a film design having a wrinkle structure in a conventional microphone structure. Fig. 7 is a view showing the structure of a variable capacitance device of a cantilever elastomer which forms a spring effect by a cantilever structure and a protruding structure according to a preferred embodiment of the present invention. 13 200926865 21433 twf.doc/p. Fig. 8 is a view showing the construction of a pressure variable capacitance device of a cantilever elastomer which forms a spring effect by a cantilever structure and a projecting structure according to another preferred embodiment of the present invention. Fig. 9 is a side elevational view showing the structure of a piezo-capacitor device of a cantilever elastomer in which a cantilever structure and a projecting structure are formed by a cantilever structure and a projecting structure according to another preferred embodiment of the present invention. [Main component symbol description] ® 10: Pressure-variable capacitance device 12: Conductive Diagram 40: Perforated Member 30: Substrate 20, 22 · Air Gap 41: Support portion 31 : dielectric layer 11 : spring structure (Spring) 510 510, 610 : film 710 : substrate 712 : hollow structure 720 : back plate 722 : conductive layer 724 : cantilever structure 730 : film (Membrane) 732: protrusion structure 14 21433tw£doc/p 200926865 910: substrate 920: back plate 930: film (Membrane) 932: elastic structure pattern
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