1334734 P27950008TW 20900twf.doc/n 九、發明說明： 本發明主張美國專利申請案第60/815,374號於2006 年6月20曰申請之專利申請案名稱為「新型微型電容式傳 感 器（NOVEL· MINIATURE CAPACITIVE TRANSDUCER)」優先權，在此將上列專利申請案之内容 參照加入本申請案之内容中。 【發明所屬之技術領域】 本發明是有關於一種微型電聲波元件，且特別是有關 於一種具有低彈簧係數結構之微型電聲波元件，其具有高 靈敏度與變形量的效能。 ' 【先前技術】 電容式麥克風晶片以石夕微細加工技術與積體電路(IC) 製程技術整合而成之聲波傳感器㈤㈣价丁瓜㈣收…’具 有質量輕、體積小、訊號品質佳等優點，在民生家電產品 應用上，由於手機的需求日益增大且聲音品質要求日益增 高，加上助聽器之市場與技術已開始蓮勃發展，電容式麥 克風晶片已經漸漸成為麥克風晶片的主流。就市場的角度 而言’根據Digitimes公司市場趨勢報告中關於行動電話手 機部刀’預估2004年北美麥克風晶片（Microphone Chips) 市場，將達五億個之水準，而從20〇4年到2009年每年將 以20%朝向市場穩定成長。手機上之麥克風之應用屬於目 前市場上之主流。 1334734 P27950008TW 20900twf.doc/n 由於以石夕為基材的積體電路製程較便宜大量地使用於 電子產品中，及其應用領域不斷的向外擴張，將來更有大 篁的應用會以矽為基材的製程製作，並搭配(：]^[08製程將 讀取電路直接整合於一顆晶片上，加上台灣已成為全球第 一大半導體代工薇約為目前市場之〜7〇%的代工率，將來 勢必可量產並加速其商品化時程。因此若在麥克風的佈局 上’要避開與區隔各家大廠的元件設計，必須先取得元件 端的新穎設計與製造先機，才能臝得在麥克風元件市場上 的優勢，與瓜分佔有率的能力。 目前麥克風元件結構之應用在產品的量產上，僅限於 少許幾種的結構，這也是由於目前踏入 MEMS(Microelectromechanical Systems)麥克風的廢商只有 少許數幾家廠商之故，如Knowles公司、Infineon公司或是 Sonion公司等，而市面上大部分的封裝方式仍以Knowles 開發的設計為主。 請參照圖1到圖3，其緣示Knowles公司之麥克風結構 設計。此聲波傳感器(Acoustic Transducer) 10包括導電薄膜 (Conductive Diagram) 12 與具有穿孔之構件（perforated Member)40 ’由基底30所支撐，而藉由空氣間隙(Air Gap)20 所隔離。而一個非常薄的空氣間隙22則存在導電薄膜12與 基底30之間，以便讓此薄膜12能夠自由地上下移動，並且 使薄膜12從基底30減少震動(Decouple)。而許多的突起 (Indentation)13則形成於薄膜12之下，以避免薄膜12與基底 30之間的吸附現象。 6 1334734 P27950008TW 20900twf.doc/n 薄膜12的橫向移動被構件40之支持部41所限制，而此 可當成是薄膜12與構件40之間適當的啟始空間，而此支持 部41可以是圓孩(尺丨11§)構造或是許多凸塊(Bump)構造。若 支持部41是圓環構造，則當薄膜12靠在支持部41上時，則 會形成緊密的聲音密封空間，會導致聲波傳感器具有控制 非常好的低頻下降率(Roll-off)。薄膜12與基底30之間具有 一個介電層31。而導電電極(Conducting Electrode)42是固定 在不導電之構件40下。而此構件40具有數個孔洞21，而薄 膜12也有數個孔洞，用以與構件40之孔洞21形成聲音流動 之通路14。1334734 P27950008TW 20900twf.doc/n IX. INSTRUCTIONS: The present invention claims the patent application filed on June 20, 2006 by the US Patent Application No. 60/815,374 entitled "New Type of Miniature Capacitive Sensor (NOVEL·MINIATURE CAPACITIVE TRANSDUCER) Priority is hereby incorporated by reference in its entirety in the content of the present application. BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a miniature electroacoustic wave element, and more particularly to a miniature electroacoustic wave element having a low spring rate structure, which has high sensitivity and deformation performance. [Prior Art] The acoustic microphone chip is integrated with the Shi Xi micro-machining technology and the integrated circuit (IC) process technology. (5) (4) The price of the melon (four) is... 'has the advantages of light weight, small size, good signal quality, etc. In the application of Minsheng home appliances, as the demand for mobile phones is increasing and the sound quality requirements are increasing, and the market and technology of hearing aids have begun to develop, capacitive microphone chips have gradually become the mainstream of microphone chips. From a market perspective, 'Based on the Digitimes Market Trends Report, the mobile phone handset knife' estimates that the 2004 North American Microphone Chips market will reach 500 million, from 20 to 4 years to 2009. In the year, it will grow steadily toward the market with 20% per year. The application of the microphone on the mobile phone is currently the mainstream in the market. 1334734 P27950008TW 20900twf.doc/n Since the integrated circuit process based on Shi Xi is cheaper and more widely used in electronic products, and its application fields continue to expand outward, more ambitious applications will become The manufacturing process of the substrate is combined with the (:]^[08 process to directly integrate the read circuit on a single wafer, and Taiwan has become the world's largest semiconductor foundry, about 7% of the current market. The rate of foundry will be able to mass-produce and accelerate its commercialization time in the future. Therefore, if you want to avoid the component design of each big factory in the layout of the microphone, you must first obtain the novel design and manufacturing opportunities of the component end. In order to be able to barely gain the advantages in the microphone component market and the ability to divide the occupancy rate. At present, the application of the microphone component structure in the mass production of the product is limited to a few structures, which is also due to the current MEMS (Microelectromechanical Systems) The quotient of the microphone is only a few manufacturers, such as Knowles, Infineon or Sonion, and most of the packaging methods on the market are still in the case of Knowl. The design developed by es is mainly based on Fig. 1 to Fig. 3, which shows the microphone structure design of Knowles. The acoustic sensor (Acoustic Transducer) 10 includes a conductive film 12 and a perforated member. 40' is supported by the substrate 30 and is isolated by an air gap 20, and a very thin air gap 22 is present between the conductive film 12 and the substrate 30 to allow the film 12 to move up and down freely. And the film 12 is decoupled from the substrate 30. A plurality of protrusions 13 are formed under the film 12 to avoid adsorption between the film 12 and the substrate 30. 6 1334734 P27950008TW 20900twf.doc/ n The lateral movement of the film 12 is limited by the support portion 41 of the member 40, which can be regarded as a suitable starting space between the film 12 and the member 40, and the support portion 41 can be a round child (foot 11) configuration Or a plurality of bump structures. If the support portion 41 is a ring structure, when the film 12 is placed on the support portion 41, a tight sound sealing space is formed, which causes the acoustic wave sensor to have A very good low frequency drop rate is controlled. There is a dielectric layer 31 between the film 12 and the substrate 30. The Conducting Electrode 42 is fixed under the non-conductive member 40. The member 40 has A plurality of holes 21 are formed, and the film 12 also has a plurality of holes for forming a passage 14 for sound flow with the holes 21 of the member 40.
Knowle s公司之麥克風結構設計主要是針對背板(b ack plate)的指樓式結構設計’來增加背板的強度，以減少背板 阻抗。而薄膜(Membrane)採減少殘留應力（residual stress) 的設計方式，採取一般的圓形薄膜設計。薄膜僅做於簡單 的支撐’其結構雖能避免殘留應力的問題與較高之自然頻 率響應’但是其設計的有效變形量與靈敏度仍尚嫌不足。 請參照圖4，其繪示Knowles公司之另一麥克風結構設 計。基本上與圖1-3之結構相同，唯一的差異是此薄膜12 是藉由數個彈簧結構(Spring) 11連接到基底30之上，以便減 輕薄膜内在應力(Intrinsic Stress)，以及從基底30或是裝置 封裝後所產生的應力。 傳統麥克風元件設計採用簡單固定的薄膜設計，雖然 有増加薄膜靈敏度的設計方法，如指撐式(Finger)結構，請 參照圖5所示，其中薄膜510具有指撐之結構。或者是皺摺 7 1334734 P27950008TW 20900twf.doc/n 式(corrugated)結構’請參照圖6所示，其中薄膜6具有敵 摺之結構。但是大部分的設計皆有其缺點，指撐式的薄膜， 其薄膜較軟較為靈敏，但是卻是具較低的共振頻率響應， 而且易於斷裂。皺摺式薄臈設計，雖可以有效降低殘留應 力的影響，使薄膜靈敏度變的較大，但是其製程較複雜， 加工不易，且增加靈敏度有限。 【發明内容】 本案技出增加薄膜靈敏度（compliance)，並以創新之 結構設計製作出低彈簧係數的結構，使聲波傳感器 (Acoustic Transducer)更具有高靈敏度與變形量的效能。 本發明所提出之微型電聲波元件，包括一電容式音屋 感測元件，而上述電容式音壓感測元件包含兩個或多個上 有導電材的平行版以構成電容，其中至少一平行板上開音 孔，而在另外平行板中至少一平行板上具有一彈簧結構。 本發明所提出之一種微型電聲波元件結構組成，包括 基板(Substrate)與其上之背板(Black plate)與薄膜 (Diaphragm)。其中背板具有多數個音壓孔(Acoustic hole)， 而薄膜表面具有一個或多個突起結構(Indentati〇n)。此突起 結構將會接觸背板成為支撐結構，而上述薄膜另一表面具 有切割開的橋狀結構，當音壓傳輸至薄膜時，橋狀結構會 因突起結構的支撐而產生變形，薄膜因此而增加位移之變 形量，藉以使得電容的電場分佈是介於薄膜與背板之間， 當音壓造成薄膜變形與橋狀結構位移後，造成的電容變化 8 P27950008TW 20900twf.d〇c/n 量為感測的原理。 ^為讓本發明之上述和其他目的、特徵和優點能更明顯 易f董下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 、。 【實施方式】 本發明提出一種聲波傳感器(Acoustic Transducer)， 乃利用彈簧結構概念，在壓力感測薄膜上製作出特殊的結 構圖案與薄膜上之突起結構當支撐，架構出類似橋狀彈菁 ，結構，以提升聲波傳感器之性能。而其原理為若要以簡 單之結構有效增加靈敏度，可改變薄膜的設計圖形，藉由 支撐結構(Support Structure)即可製作出類似彈簧般的結構 效應，而增加薄膜的靈敏度。本發明提出一種微型電聲波 元，結構，可運用於例如微型麥克風(Micr〇ph〇ne)元件， 或是任何需要將聲音轉換為訊號之電子裝置，例如手機或 是微型麥克風等，或是任何偵測空氣壓力之變化而轉換為 訊號之電子裝置中。 、 本發明所提出之一種微型電聲波元件結構組成，包括 一種電容式音壓感測元件。此電容式音壓感測元件包含兩 個或多個上有導電材料的平行板構成電容，其中至少一平 行板上開音孔，而在其他平行板中至少一平行板上建構彈 簧結構。 本發明所提出之一種微型電聲波元件，可應用於壓力 感測器、加速度感測器或超聲波感測器等裝置上。 P27950008TW 20900twf.doc/n 在一實施例中，本發明所提出之一種微型電聲波元件 結構組成’包括基板(Substrate)與其上之背板(Blackplate) 與薄膜(Diaphragm)。其中背板具有多數個音壓孔(Ac〇ustic hole) ’而薄膜表面具有一個或多個突起結構(Indentati〇n)。 此突起結構將會接觸背板成為支撐結構，而上述薄膜表面 具有切割開的橋狀結構，當音壓傳輸至薄膜時，橋狀結構 會因突起結構的支撐而產生變形，薄膜因此而增加位移之 k形量，藉以使得電容的電場分佈是介於薄膜與背板之 間，當音壓造成薄膜變形與橋狀結構位移後，造成的電容 變化量為感測的原理。 而此薄膜為一種形變薄膜傳感單元，例如可以是具有 一個或多個特殊橋狀(Bridge)或懸梁(Beam)的圖案設計;除 此之外，薄膜表面上具有單—或多數個突起(Indentati〇n) 的π，將作為薄膜支樓之用。而每一個橋狀或懸臂結構 下之犬起、、Ή構形成一組類似彈簧的效應，於薄膜上將有多 組類似彈簧效應的結構，稱之為橋狀彈簧㈣臂彈菁。 當空氣壓力傳送到薄膜時，薄膜會產生變形，而薄膜 下表面的突起結構與背板作接觸支#，㈣ 臂結構會因為突起結構的捕力而大幅變形，此時 板ό因此而產生上下位移的變形’如此將 變形與位移量，間接增加了平板間的電容變化值 dt增:二靈敏度。而麥克風的薄膜與背板間的 電令變冑猎由導電設計傳送出所測得之訊號。 而上述之形變薄膜傳感單元以及背板結構可以使用 1334734 P27950008TW 20900twf.doc/n 一個或多個材料所組成，包括以碳為基質之聚合物 (Carbon-based polymers)、石夕（Silicon)、氮化石夕（Silicon nitride),複晶石夕（Polycrystalline silicon)、非晶石夕 • (Amorphous silicon)、二氧化石夕（Silicon dioxide)、碳化石夕 * (Silicon carbide)、鍺(Germanium)、錄(Gallium)、石中化物 (Arsenide)、碳(Carbon)、鈦(Titanium)、金(Gold)、鐵(Iron)、 銅(Copper)、鉻(Chromium)、鶴(Tungsten)、鋁(Aluminum)、 鲁 鉑(Platinum)、鎳(Nickel)、鈕(tantalum)或其合金等等。 本發明所提出之具有橋狀彈簧或懸臂彈簧等結構之 聲波傳感器，其架構在一實施例中請參照圖7A與圖7B所 示，另外亦參考圖8，說明本發明所提出之聲波傳感器之 具有橋狀彈簧結構之立體測試示意圖，並在底下一併說 明。在基板(substrate)700上具有兩層平行板的結構，一為 背板(backplate)結構710，而另以一為感測之薄膜73〇 (如 圖8的820)，而背板結構71〇(如圖8的81〇)與薄膜73〇 (如圖8的820)之間由一絕緣層72〇相隔，例如一矽氧 • 化層。背板結構710具有多個音孔(A嶋tic h〇le)712 (如 圖8的812)。而薄膜730 (如圖8的82〇)為一種可形變 之薄膜傳感單元，例如可以是具有特殊橋狀(脑㈣或懸梁 (Beam)結構的圖案設計。 薄膜730 (如圖8的82〇)表面上具有單一或複數橋 狀或懸梁的結構。例如，如圖7A所示，絕緣層72〇之一 位置722與薄膜730 (如圖8的82〇)之基座736相結合， 而由基座736向外延伸-薄膜懸梁結構瓜，而此薄^懸 1334734 P27950008TW 20900twf.doc/n 梁結構732上與背板結構710相對應之一側邊上形成單一 或複數突起(indentation)734的結構，作為此薄膜懸梁结構 732支撐之用。當然，如前所述，此薄膜懸梁結構732上 的一部份，如圖8中標示號碼為830的結構，可為一橋狀 或懸臂之結構’底下以橋狀結構830說明。而此此橋狀結 構830與其突起734形成一組類似彈簧的效應。 在本發明所提出之聲波傳感器’在薄膜730上可配置 一組或是多組類似彈簧效應的結構’在此稱為橋狀或懸臂 彈簧。當空氣壓力傳送薄膜730時，薄膜730會產生變形， 而懸梁結構732下表面之突起734結構與背板結構71(/作 接觸支撐，薄膜730上的橋狀結構830會因為突起734結 構的支撐力而大幅變形，此時薄膜73〇會因此而產生上下 位移的變形，如此將增加背板結構710與薄膜73〇兩平板 之間的變形與位移量，間接增加了兩平板間的電容變化 值。而經由配置在薄膜730上的導電材質，以及佈植在基 板700上整層的導電層714，而感應並且測得此電容變化。 上述之導電設計上，亦可設計為背板結構71〇與薄膜73〇 ，平板皆由可導電之材料所組成，並且構成電容器之兩平 行電極。由以上之设計將會大大增加薄膜之靈敏度。而麥 克風的薄膜與背板間的電容變化，將藉由這樣之導電設 而輸出。 ^請參考圖8，在基板上具有兩層平行板的結構，包括 背板結構810與薄膜82〇。背板結構81〇具有多個音孔 812。薄膜820表面上具有四個橋狀彈簧結構83〇，然此數 12 (S ) 1334734 P27950008TW 20900twf.doc/n 量可視設計上的需要而調整。而此橋狀結構830包括兩個 懸臂832與834，以及橋中心部分836下方為734突起 (indentation)結構所組成。而此橋狀結構830與背板結構 810相對應之一側邊上形成734突起(indentation)的結構。 橋狀彈簧結構830下表面之734突起結構與背板結構810 作接觸支撐’而使橋狀結構830與其734突起形成一組類Knowle's microphone structure design is primarily designed for the backplane structure of the back panel (b ack plate) to increase the strength of the backplane to reduce backplane impedance. Membrane adopts a design that reduces the residual stress and adopts a general circular film design. The film is only used for simple support. The structure can avoid residual stress and high natural frequency response, but the effective deformation and sensitivity of the design are still insufficient. Referring to Figure 4, another microphone structure design of Knowles is shown. Basically the same as the structure of FIGS. 1-3, the only difference is that the film 12 is attached to the substrate 30 by a plurality of spring structures 11 to mitigate the intrinsic stress of the film, and from the substrate 30. Or the stress generated after the device is packaged. The conventional microphone element design adopts a simple fixed film design. Although there is a design method of adding film sensitivity, such as a finger structure, please refer to FIG. 5, in which the film 510 has a structure of a finger support. Or wrinkles 7 1334734 P27950008TW 20900twf.doc/n Corrugated structure As shown in Fig. 6, the film 6 has an enemy structure. However, most of the designs have their shortcomings. The finger-type film is softer and more sensitive, but it has a lower resonance frequency response and is prone to breakage. The wrinkle-type thin enamel design can effectively reduce the influence of residual stress and make the sensitivity of the film larger, but the process is more complicated, the processing is not easy, and the sensitivity is limited. SUMMARY OF THE INVENTION The present invention increases the film's compliance and designs a low spring-coefficient structure with an innovative structure, so that the acoustic sensor (Acoustic Transducer) has higher sensitivity and deformation performance. The miniature electroacoustic wave device proposed by the present invention comprises a capacitive sound chamber sensing component, and the capacitive sound pressure sensing component comprises two or more parallel plates with conductive materials to form a capacitor, wherein at least one parallel The sound hole is opened on the plate, and at least one of the parallel plates has a spring structure. The structure of a miniature electroacoustic wave device proposed by the present invention comprises a substrate and a black plate and a thin film thereon. The backing plate has a plurality of acoustic holes, and the surface of the film has one or more protruding structures (Indentati〇n). The protruding structure will contact the backing plate to form a supporting structure, and the other surface of the film has a cut bridge structure. When the sound pressure is transmitted to the film, the bridge structure is deformed by the support of the protruding structure, and the film is thus Increasing the deformation amount of the displacement, so that the electric field distribution of the capacitor is between the film and the back plate. When the sound pressure causes the film deformation and the bridge structure to be displaced, the capacitance change is 8 P27950008TW 20900twf.d〇c/n. The principle of sensing. The above and other objects, features, and advantages of the present invention will be apparent from the description of the appended claims. ,. [Embodiment] The present invention provides an acoustic sensor (Acoustic Transducer), which utilizes a spring structure concept to create a special structural pattern on a pressure sensing film and a protruding structure on a film to support a bridge-like elastic crystal. Structure to enhance the performance of the acoustic wave sensor. The principle is that if the sensitivity is increased in a simple structure, the design pattern of the film can be changed, and a spring-like structural effect can be produced by the support structure to increase the sensitivity of the film. The invention provides a miniature electroacoustic wave element, which can be applied to, for example, a micro-microphone (Micr〇ph〇ne) component, or any electronic device that needs to convert sound into a signal, such as a mobile phone or a micro-microphone, or any An electronic device that detects changes in air pressure and converts it into a signal. The structure of a miniature electroacoustic wave device proposed by the present invention comprises a capacitive sound pressure sensing component. The capacitive sound pressure sensing element comprises two or more parallel plates with conductive material to form a capacitor, wherein at least one of the parallel plates opens a sound hole, and at least one of the other parallel plates forms a spring structure. A miniature electroacoustic wave device proposed by the present invention can be applied to a device such as a pressure sensor, an acceleration sensor or an ultrasonic sensor. P27950008TW 20900twf.doc/n In one embodiment, a miniature electroacoustic wave device of the present invention has a structural composition 'including a substrate and a black plate and a thin film thereof. The back sheet has a plurality of Ac〇ustic holes and the surface of the film has one or more protrusion structures (Indentati). The protruding structure will contact the back plate to form a supporting structure, and the surface of the film has a cut bridge structure. When the sound pressure is transmitted to the film, the bridge structure is deformed by the support of the protruding structure, and the film is thus increased in displacement. The k-shaped amount is such that the electric field distribution of the capacitor is between the film and the back plate. When the sound pressure causes the film deformation and the bridge structure to be displaced, the amount of capacitance change is the principle of sensing. The film is a deformation film sensing unit, for example, may have a pattern design with one or more special bridges or beams; in addition, there are single or a plurality of protrusions on the surface of the film ( The π of Indentati〇n) will be used as a film support. In each bridge or cantilever structure, the dog and the raft structure form a set of spring-like effects, and there will be a plurality of spring-like structures on the film, which is called bridge spring (four) arm elastic. When the air pressure is transmitted to the film, the film will be deformed, and the protruding structure on the lower surface of the film will make contact with the back plate. (4) The arm structure will be greatly deformed due to the trapping force of the protruding structure, and the plate will be up and down. The deformation of the displacement 'so the deformation and displacement amount, indirectly increases the capacitance change value dt between the plates: two sensitivity. The electrical signal between the film and the backplane of the microphone is transmitted by the conductive design to transmit the measured signal. The deformation film sensing unit and the back plate structure described above may be composed of one or more materials including 1334734 P27950008TW 20900twf.doc/n, including carbon-based polymers, Silicon, and Silicon nitride, Polycrystalline silicon, Amorphous silicon, Silicon dioxide, Silicon carbide, Germanium, (Gallium), Arsenide, Carbon, Titanium, Gold, Iron, Copper, Chromium, Tungsten, Aluminum ), Platinum, Nickel, tantalum or alloys thereof, and the like. The acoustic wave sensor having the structure of a bridge spring or a cantilever spring is provided in the embodiment of the present invention. Referring to FIG. 7A and FIG. 7B in an embodiment, the sound wave sensor of the present invention is also described with reference to FIG. A schematic diagram of a three-dimensional test with a bridge spring structure, and is described below. There is a structure of two parallel plates on a substrate 700, one is a backplate structure 710, and the other is a film 73 感 (as shown in 820 of FIG. 8), and the back plate structure 71 〇 (81 如图 in Fig. 8) is separated from the film 73 〇 (e.g., 820 in Fig. 8) by an insulating layer 72, for example, an oxygen layer. The backplane structure 710 has a plurality of sound holes 712 (such as 812 of FIG. 8). The film 730 (such as 82A in Fig. 8) is a deformable film sensing unit, which may be, for example, a pattern design having a special bridge shape (brain (4) or a beam structure. Film 730 (as shown in Fig. 8) a structure having a single or a plurality of bridges or cantilevers on the surface. For example, as shown in Fig. 7A, one of the positions 722 of the insulating layer 72 is combined with the base 736 of the film 730 (such as 82 of Fig. 8). The pedestal 736 extends outwardly - the film cantilever structure 3,000, and the thin hang 1334734 P27950008 TW 20900 twf.doc / n beam structure 732 on one side corresponding to the back plate structure 710 forms a single or a plurality of indentations 734 The structure is used as a support for the film cantilever structure 732. Of course, as previously mentioned, a portion of the film cantilever structure 732, as shown in Figure 8 with the number 830, can be a bridge or cantilever structure. The bottom is illustrated by a bridge structure 830. The bridge structure 830 and its protrusions 734 form a set of spring-like effects. The acoustic wave sensor of the present invention can be configured with one or more sets of similar spring effects on the film 730. Structure 'herein called bridge or The cantilever spring. When the air pressure transmits the film 730, the film 730 is deformed, and the protrusion 734 structure on the lower surface of the cantilever structure 732 is in contact with the back plate structure 71 (the contact structure is supported, and the bridge structure 830 on the film 730 is due to the protrusion 734). The support force of the structure is greatly deformed, and at this time, the film 73〇 will be deformed up and down, which will increase the deformation and displacement between the back plate structure 710 and the film 73〇, which indirectly increases the between the two plates. The capacitance change value is sensed and measured by the conductive material disposed on the film 730 and the conductive layer 714 disposed on the entire substrate 700. The above conductive design can also be designed as a back plate. The structure 71〇 and the film 73〇, the flat plate is composed of a conductive material, and constitutes two parallel electrodes of the capacitor. The above design will greatly increase the sensitivity of the film, and the capacitance change between the film and the back plate of the microphone The output will be output by such a conductive arrangement. Referring to Figure 8, a structure having two parallel plates on the substrate, including a back plate structure 810 and a film 82. The structure 81 has a plurality of sound holes 812. The film 820 has four bridge spring structures 83 on the surface, but the number 12 (S) 1334734 P27950008TW 20900twf.doc/n is adjusted according to the needs of the visual design. The structure 830 includes two cantilevers 832 and 834, and a 734 indentation structure below the bridge center portion 836. The bridge structure 830 forms a 734 protrusion on one side of the back plate structure 810 (indentation) )Structure. The protruding structure 734 of the lower surface of the bridge spring structure 830 is in contact with the backing plate structure 810, and the bridge structure 830 and its 734 are formed into a group.
似彈簀的效應’也就是薄膜82〇上的橋狀結構83〇會因為 734突起結構的支撐力而大幅變形，此時薄膜82〇會因此 而產生上下位移的變形’如此將增加背板結構81〇與薄膜 820兩平板之間的變形與位移量，間接增加了兩平板間的 電容變化值。而圖9則說明圖8聲波傳感器之橋狀結構中 背板結構810具有多個音孔812之結構。 本案提出一個以增加薄膜靈敏度（c〇mpIiance )，並 以創新之結構設計製作出低彈簧係數的結構，使聲波傳感 器(Acoustic Transducer)，例如麥克風元件，更具有高靈敏 度與變形量的效能。The effect of the impeachment 'that is, the bridge structure 83 on the film 82〇 will be greatly deformed by the supporting force of the 734 protruding structure, and the film 82〇 will thus deform up and down. This will increase the back plate structure. The amount of deformation and displacement between the 81 〇 and the two plates of the film 820 indirectly increases the capacitance change between the two plates. 9 shows the structure of the back plate structure 810 having a plurality of sound holes 812 in the bridge structure of the acoustic wave sensor of FIG. This case proposes a structure that increases the sensitivity of the film (c〇mpIiance) and creates a low spring coefficient with an innovative structure, so that an acoustic sensor, such as a microphone component, is more sensitive to high sensitivity and deformation.
雖然本發明已以較佳實施例揭露如上，然其並非用以 2本發明、，,任何熟習此技藝者，在不脫離本發明之精神 和乾圍内’當可作些許之更動與潤飾，因 範圍當視後附之申請專利範圍所界定者為準。之保濩 【圖式簡單說明】 圖1〜圖3是習知之麥克風結構設計。 圖4是另—種習知之麥克風結構設計〇 13 P27950008TW 20900twf.doc/n 圖5是習知麥克風結構中— 構之薄膜設計。 種具有指禮式(Finger)結 圖6是習知麥克風結構中一種 結構之薄膜設計。 具有皺摺式(corrugated) 圖7A與7B是說明本發明一較佳 簧結構之聲波傳感器剖面圖示意。 實施例之具有橋狀彈Although the present invention has been disclosed in the above preferred embodiments, it is not intended to be used in the present invention, and any skilled person skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application. [Brief Description] FIG. 1 to FIG. 3 are conventional microphone structure designs. Fig. 4 is another conventional microphone structure design. 13 P27950008TW 20900twf.doc/n FIG. 5 is a thin film design of a conventional microphone structure. Fig. 6 is a film design of a structure in a conventional microphone structure. Corrugated Figs. 7A and 7B are cross-sectional views showing an acoustic wave sensor of a preferred spring structure of the present invention. Example with a bridge bomb
圖8與圖9是說明本發明一 簧結構之聲波傳感器立體與剖面 較佳實施例之具有橋狀彈 圖。 【主要元件符號說明】 1〇 ·聲波傳感益(Acoustic Transducer) i2 .導電薄膜(Conductive Diagram) 4〇 ·具有穿孔之構件(perforated Member) 3〇 ·基底 2〇、22 :空氣間隙(Air Gap) 41 :支持部 31 :介電層 11 :彈簧結構(Spring) 510、610 :薄膜 700 :基板(substrate) 71〇 :背板(back plate)結構 712 :音孔(Acoustic hole) 720 :絕緣層 730:薄膜 1334734 P27950008TW 20900twf.doc/n 732 :懸梁結構 734 :凸起(indentation) 736 :基座 810 :背板結構 812 :音孔 820 :薄膜 830 :橋狀結構 832與834 :懸臂 836 :橋中心部分Fig. 8 and Fig. 9 are diagrams showing a bridge shape of a preferred embodiment of the acoustic wave sensor of the one-spring structure of the present invention. [Main component symbol description] 1〇·Acoustic Transducer i2. Conductive Diagram 4〇·Perforated Member 3〇·Base 2〇, 22: Air Gap (Air Gap 41: Support portion 31: Dielectric layer 11: Spring structure (Spring) 510, 610: Film 700: Substrate 71: Back plate structure 712: Acoustic hole 720: Insulation layer 730: film 1334734 P27950008TW 20900twf.doc/n 732: cantilever structure 734: indentation 736: base 810: back plate structure 812: sound hole 820: film 830: bridge structure 832 and 834: cantilever 836: bridge Central part
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