200925302 九、發明說明： 【發明所屬之技術領域】 本發明涉及蒸鍍技術領域，尤其涉及一種蒸鍍裝置。 【先前技術】200925302 IX. Description of the Invention: [Technical Field] The present invention relates to the field of vapor deposition technology, and more particularly to an evaporation apparatus. [Prior Art]
蒸鍍係一種物理氣相沈積技術，即以物理之方式進行 薄膜沈積。具體地，其通過離子束或電子束對蒸鍍材料進 行加熱，使蒸鍍材料變成氣態或離子態，而沈積於待鍍工 ，表面以形成一蒸鍍材料膜層。蒸鍍技術因成膜過程簡 早、工藝易控制而得到廣泛應用，例如光學元件表面反射 膜層、裝飾件表面之金、銀膜層等。 蒸，過程而要於一療鑛裝置中進行，此蒸鍍裝置通常 包括一蒸鍍腔室以及一用以提供蒸鍍時所需之真空度之抽 氣系統，蒸鍍腔室中具有一容置有蒸鍍材料之坩堝、一與 1尚相對&置之待鍍工件承縣。當蒸鍍材料被加熱蒸發 2，蒸發之蒸鍍材料粒子以一定能量沖向待鍍工件承載 並沈積於待錢工件表面上。 無哪在預融材料或係鍍膜製程中，當電子束或離 =轟擊材料時’常會出現材料錢出㈣外，導致材料 二塑Γ低’而且對於蒸鍵腔室内之潔淨度影響甚大，進而 影響光學薄臈之品質。 逆向 【發明内容】 下面將結合附圖 明。 對本發明實施例作進一步地詳細說 併，閱圖1及圖2,本發明實施例提供之蒸鍍裝置 200925302 100包括一蒸鍍腔室1〇、_ ,料用之能量束之產生裝置30/、，、、，· 〇以及—加熱蒸鍍材 該蒸鍍腔室10内部設置有一坩堝U 一待鍍工件承載架13。 遮罩12以及 該坩堝11之材料可選自鎢、鉬、鋰 二:伽、氮化爛等高炫點材料。該_;:开墨= 柱狀、錐台狀、舟狀或其他 之形狀可為 •蒸麵容置部m及一位於頂部= 11可設置-投料口（圖未示）以方便 二該掛螞 以實現連續蒸鍍作業。 ^ 1進仃投料， 過若設於該㈣11頂部之一112上並可通 過右干螺釘固I該遮罩12之底部具有—與該㈣u = 部之開口 112相配合之開口 121，該遮 β 數個氣流通孔m，該遮罩12之側壁具有一入:部具有： 入口⑵用於供加熱該_内蒸鍍材料用之 丄： ❿到_ u内之蒸鐘材料上。該遮罩12亦可選自鎢、顧、 鈕、銅、石墨、氧化紹、碳化哪、氮化爛等高炫點金屬。 該遮罩12之形狀亦可為柱狀、錐台狀、舟狀或其他多邊形 形狀，只要該遮罩12底部之開口 121形狀與該掛禍n頂 部之開口 112形狀相配合即可。優選地，該坩堝u之形狀 為倒錐台狀’而該遮罩12之形狀為圓筒狀。該坩堝J頂 部之開口 112與該遮罩12底部之開口 121均為圓形，該遮 罩12套設於坩堝n頂部之開口 112上，開口 ΐ2ι與開口 112相對，此時，開口 121之外徑與該開口 112之外徑相當， 200925302 這樣，可保證遮罩12剛好可套設於坩堝11上。該遮罩12 側壁之入口 123位於靠近該遮罩12底部之開口 121之位 置，且入口 123與該遮罩12底部之開口 121相連通。該複 數個氣流通孔122在該遮罩12之頂部平面為均勻排布。於 本實施例中，該複數個氣流通孔122在遮罩12之頂部圓周 面上呈行列且為對稱排布。這種設置，使得蒸鍍材料蒸發 後經由該複數個氣流通孔122出去時之濃度和空間分佈更 _加均勻。該複數個氣流通孔122之大小相同，其形狀可為 β圓形、方形、菱形、三角形或多邊形等。 該待鍍工件承載架13與該坩堝11之氣流出口 112相 對設置，該待鍍工件承載架13中可放置一個或複數個待鍍 工件131。優選地，該待鍍工件承載架13還可連接一待鍍 工件預熱裝置以使待鍍工件表面預熱，達到更好之蒸鍍效 果，以及一待鍍工件翻面裝置以自動翻面待鍍工件，實現 連續蒸鍍作業。 〇 該抽氣系統20用以提供蒸鍍腔室10蒸鍍時所需之真 空度。 該能量束之產生裝置30用於產生一能量束，能量束經 由遮罩12側壁之入口 123進入坩堝11中而射至坩堝11中 之蒸鍍材料上。蒸鍍材料從而被加熱並蒸發成為氣態或者 離子態，蒸發之蒸鍍材料粒子經由遮罩12頂部之複數氣流 通孔122沖出，並以一定能量沖向待鍍工件承載架13，並 沈積於待鍍工件131之表面上，從而在待鍍工件131表面 上形成一蒸鍍材料薄膜。於本實施例中，該能量束之產生 200925302 ，裝置30為一電子搶3〇1，該電子搶3〇1發射出一電子束， ‘電子束經過轉向磁場皿而集中至掛禍U中之蒸鑛材料 上。該電子束經轉向磁場3〇2偏轉角度為27〇度，如此設 計’可使電子束垂直擊打於蒸錢材料上， 鍍材料。 當然’該能量束之產生裝置3〇可為電子束之產生裝 置’亦可為離子束之產生裝置。亦即，該能量束之產生裝 •置3G亚不局限于上述利用電子搶發射電子束之形式，亦可 使用離子束，或其他粒子照射形式等。 相對於先前技術，該蒸鑛裳置具有一套設於其堆禍頂 部開口上之遮罩，該遮罩之侧壁具有一入口，用於供加执 該坩堝内蒸鍍材料用之能量束入射至坩堝内之蒸鍍材料 上，該遮罩之頂部平面具有複數氣流通孔。如此，可有效 防止蒸鍍時蒸鑛材料飛藏出堆網，從而可防止蒸鍵腔室被 5木’避免影響蒸n，^蒸鑛材料形成之氣態或離子 ©態粒子流可從遮罩頂部之複數氣流通Evaporation is a physical vapor deposition technique that physically deposits thin films. Specifically, the vapor deposition material is heated by an ion beam or an electron beam to change the vapor deposition material into a gaseous state or an ionic state, and is deposited on the surface to be plated to form a vapor deposition material film layer. The vapor deposition technique is widely used due to the short film formation process and easy control of the process, such as the surface reflective film layer of the optical element, the gold surface of the decorative part, and the silver film layer. Steaming, the process is carried out in a treatment device, which usually comprises an evaporation chamber and an evacuation system for providing the vacuum required for evaporation, and the evaporation chamber has a volume The enthalpy of the vapor deposition material, one and one are still opposite & When the evaporation material is heated and evaporated 2, the evaporated evaporation material particles are rushed to the workpiece to be plated with a certain energy and deposited on the surface of the workpiece to be emptied. Nothing in the pre-melting material or the coating process, when the electron beam or the ion bombardment material, 'the material often comes out (4), which leads to the material's low plasticity' and has a great influence on the cleanliness of the steaming chamber. Affect the quality of optical thinness. Reverse [Summary of the Invention] The following will be combined with the accompanying drawings. For further details of the embodiments of the present invention, and referring to FIG. 1 and FIG. 2, the vapor deposition apparatus 200925302 100 according to the embodiment of the present invention includes an evaporation chamber 1〇, _, an energy beam generating device for the material 30/ ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The mask 12 and the material of the crucible 11 may be selected from the group consisting of tungsten, molybdenum, lithium, gamma, and nitriding. The _;: ink opening = column shape, frustum shape, boat shape or other shapes can be: steaming surface receiving portion m and one at the top = 11 can be set - feeding port (not shown) to facilitate the two hanging Grass to achieve continuous evaporation operation. ^ 1 into the feed, if it is placed on one of the tops 112 of the (four) 11, and can be fixed by the right dry screw I, the bottom of the cover 12 has an opening 121 matching the opening 112 of the (four) u = portion, the cover β A plurality of airflow through holes m, the side wall of the mask 12 having an inlet portion having: an inlet (2) for heating the vapor-depositing material for the internal vapor deposition material; The mask 12 can also be selected from the group consisting of tungsten, gu, button, copper, graphite, oxidized, carbonized, and nitrided metal. The shape of the mask 12 may also be a column shape, a truncated cone shape, a boat shape or other polygonal shape, as long as the shape of the opening 121 at the bottom of the mask 12 matches the shape of the opening 112 of the top portion of the frame. Preferably, the shape of the 坩埚u is an inverted frustum shape, and the shape of the mask 12 is a cylindrical shape. The opening 112 at the top of the 坩埚J and the opening 121 at the bottom of the hood 12 are both circular. The mask 12 is sleeved on the opening 112 at the top of the 坩埚n, and the opening ΐ2 is opposite to the opening 112. At this time, outside the opening 121 The diameter is equivalent to the outer diameter of the opening 112, and 200925302 ensures that the mask 12 can be placed just over the crucible 11. The entrance 123 of the side wall of the mask 12 is located adjacent to the opening 121 at the bottom of the mask 12, and the inlet 123 communicates with the opening 121 at the bottom of the mask 12. The plurality of airflow through holes 122 are evenly arranged on the top plane of the mask 12. In this embodiment, the plurality of airflow through holes 122 are arranged in a row on the top circumferential surface of the mask 12 and are symmetrically arranged. This arrangement allows the concentration and spatial distribution of the vapor deposition material to be more uniform when it exits through the plurality of gas flow through holes 122. The plurality of airflow through holes 122 are the same size and may be in the shape of a β circle, a square, a diamond, a triangle or a polygon. The workpiece carrier 13 to be plated is disposed opposite the air outlet 112 of the crucible 11, and one or a plurality of workpieces 131 to be plated can be placed in the workpiece carrier 13 to be plated. Preferably, the workpiece carrier 13 to be plated can also be connected with a workpiece preheating device to be preheated to preheat the surface of the workpiece to be plated, to achieve a better evaporation effect, and a workpiece turning device to be automatically turned over. The workpiece is plated to achieve continuous evaporation.抽 The pumping system 20 is used to provide the vacuum required for vapor deposition of the vapor deposition chamber 10. The energy beam generating means 30 is for generating an energy beam which enters the crucible 11 through the inlet 123 of the side wall of the mask 12 and is incident on the vapor deposition material in the crucible 11. The vapor deposition material is heated and evaporated to a gaseous or ionic state, and the evaporated vapor deposition material particles are punched out through the plurality of gas flow through holes 122 at the top of the mask 12, and are rushed to the workpiece carrier 13 to be plated with a certain energy, and deposited on the workpiece. A surface of the workpiece 131 to be plated is formed to form a vapor deposition material film on the surface of the workpiece 131 to be plated. In this embodiment, the energy beam is generated 200925302, the device 30 is an electronic grab 3〇1, and the electron grabs 3〇1 to emit an electron beam, and the electron beam is concentrated by the steering magnetic field to the fault. Steamed mineral material. The electron beam is deflected by a steering magnetic field 3〇2 by an angle of 27 ,, so that the electron beam can be vertically struck on the steaming material to plate the material. Of course, the energy beam generating device 3 can be an electron beam generating device' or an ion beam generating device. That is, the energy beam generating device 3G is not limited to the above-described form in which electron beams are emitted by electrons, and an ion beam or other particle irradiation form or the like may be used. Compared with the prior art, the steaming skirt has a set of masks disposed on the top opening of the stacking fault, and the side wall of the mask has an inlet for supporting the energy beam for the vapor deposition material in the crucible. It is incident on the vapor deposition material in the crucible, and the top plane of the mask has a plurality of airflow through holes. In this way, the vaporized material can be effectively prevented from flying out of the net during evaporation, thereby preventing the steaming chamber from being affected by the steaming of the wood, and the gaseous or ionized particle flow formed by the steaming material can be removed from the mask. Top airflow
去，從而保證光學薄狀品質。 …W Θ綜上所述，本發明確已符合發明專利之要件，遂依法 提出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化，皆 應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1係本發明實施例提供之蒸鍍裝置之局部刮示圓。 200925302 . 圖2係圖1中提供之蒸鍍裝置之坩堝及遮罩之立體結構示 意圖。 【主要元件符號說明】 蒸鍍腔室 10 坩堝 11 遮罩 12 待鍍工件承載架 13 抽氣系統 20 能量束之產生裝置 30 蒸鍍裝置 100 蒸鍍材料容置部 111 開口 112 ， 121 氣流通孔 122 入口 123 待鍍工件 131 電子槍 301 轉向磁場 302Go, to ensure optical thin quality. ...W In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application in accordance with the law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the present invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial shaving circle of an evaporation apparatus according to an embodiment of the present invention. 200925302. Fig. 2 is a perspective view showing the structure of the crucible and the mask of the vapor deposition apparatus provided in Fig. 1. [Explanation of main component symbols] Evaporation chamber 10 坩埚 11 Mask 12 Workpiece carrier to be plated 13 Exhaust system 20 Energy beam generating device 30 Vapor deposition device 100 Vapor deposition material accommodating portion 111 Opening 112, 121 Air flow hole 122 inlet 123 workpiece to be plated 131 electron gun 301 steering magnetic field 302