TW200919554A - Heat treatment jig for wafer and vertical heat treatment boat provided with the jig - Google Patents

Abstract

Provided is a board-like heat treatment jig for a wafer. The jig supports the semiconductor silicon wafer by horizontally placing it on the jig for heat treatment. The jig has a doughnut shape with a hole penetrating the center portion. On a surface for placing the semiconductor silicon wafer, a ring-like protruding section is formed. The ring-like protruding section protrudes in a full-ring shape without a cut, and supports the placed semiconductor silicon wafer. The jig has three or more ring-like protruding sections which are concentrically formed with the same height. Thus, at the time of performing heat treatment to the semiconductor silicon wafer in a vertical heat treatment furnace, slip dislocation is suppressed. The vertical heat treatment boat provided with such jig is also provided.

Description

200919554 IX. Description of the Invention: [Technical Field] The present invention relates to a processing jig used for heat-treating a semiconductor germanium wafer and a wafer boat for longitudinal heat treatment having the jig, which can suppress being suppressed during heat treatment A jig for processing a wafer slippage difference treatment and a wafer boat for vertical heat treatment having the jig. [Prior Art] A semiconductor single crystal wafer, for example, a germanium wafer, is used to fabricate a wafer processing process to a component forming process, one of which is a heat treatment process. The heat treatment process is an important process such as forming a defect-free layer, degassing (ge 11 ering), crystallization, formation of impurities, diffusion, etc., for example, for oxidation, impure A diffusion furnace (oxidation and diffusion device) uses a vertical heat treatment furnace in accordance with the large diameter of the wafer, and is used to vacate a plurality of wafers and heat-treat them in a horizontally supported state. Further, in the heat treatment furnace to heat-treat the wafer, a wafer boat for inserting a large number of wafers is used. Fig. 5 is a view showing a conventional boat for vertical heat treatment. Both ends of the four pillars (rods) 2 1 4 are connected to a pair of joints (top plate and bottom plate). In each of the pillars 2 1 4, a convex portion between the plurality of grooves 2 1 1 is formed as a support portion for the wafer 2 1 2 to be processed (hereinafter sometimes simply referred to as a wafer), such as In the top view of Fig. 6 and the front view of Fig. 6(B), when using a wafer thermal element that is particularly thermally insulated, most of the wafer surface oxide film is diffused, mainly scheduled. The longitudinal member of the vertical type of heat is 2 1 0 (ditch) 2 1 1, using a vertical member. Heat treatment 6 Fig. (A) PB circle W 5 200919554 The outer peripheral portion is placed on the support portion 2 1 2 formed at the same height of each of the pillars 214, and the wafer W can be horizontally supported. Fig. 7 is a schematic view showing an example of a vertical heat treatment furnace. In the vertical heat treatment wafer boat 210 that has been carried into the reaction chamber 222 of the vertical heat treatment furnace 220, the plurality of wafers W are horizontally supported. At the time of heat treatment, the wafer W is heated by the heater 2 2 4 provided around the reaction chamber 2 2 2 . In the heat treatment, the gas is introduced into the reaction/chamber 222 via the gas introduction pipe 226, and flows downward from the upper side to be discharged from the gas exhaust pipe 228 to the outside of V'. The gases used are different depending on the purpose of the heat treatment, and mainly hydrogen, nitrogen, oxygen, argon or the like is used. When the impurities are diffused, these gases are carrier gases (carrier gases) which are gases of the impurity compounds. The wafer supporting portion 2 1 2 in the vertical heat treatment boat 2 1 0 can adopt various shapes, and Figs. 8(A) and (B) show an example. (A) A concave groove (groove) 211 is formed in the semi-cylindrical struts 214 to form a semicircular support portion 212. On the other hand, (B) is provided with a concave groove 211 in a wide-width column-shaped pillar 215, and a rectangular support portion Q 2 1 3 is formed to support the wafer closer to the wafer than the object (A). The location of the W Center. In addition, the shape of the groove also has an arc shape or a hook shape. In addition, the jig for heat treatment of wafers for monolithic use disclosed in Japanese Laid-Open Patent Publication No. 2001-60559, the entire disclosure of which is incorporated herein by reference. Fig. 9 is a view showing an example of a conventional one-piece wafer heat treatment jig. (A) is a plan view, and (B) is a cross-sectional view. In the heat treatment tool for wafer heat treatment, in the heat treatment, two annular projections 3 1 1 protruding in a concentric shape 6 200919554 are formed on the mounting surface of the wafer W. The semiconductor wafer is placed on the two annular protrusions to be supported, and then inserted into a monolithic heat treatment furnace for heat treatment. However, in the case of the conventional vertical heat treatment wafer boat, the one-piece wafer heat treatment jig, and the like, in particular, the high temperature heat treatment is performed for the purpose of oxidation or impurity diffusion, and crystal defects occur in the wafer. It is the slip (slip difference row). When the element is formed at the position where the slippage occurs, the joint leakage or the like is caused, and the yield of the element is remarkably lowered. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a jig for heat treatment of a wafer and a wafer boat for vertical heat treatment having the jig, and heat-treating the semiconductor wafer by a vertical heat treatment furnace In this case, the occurrence of slippage can be suppressed. In order to achieve the above object, the present invention provides a ij jig for heat treatment of a wafer, which is characterized in that a heat treatment jig for a plate-shaped wafer supporting a semiconductor germanium wafer is horizontally placed during heat treatment, and is characterized in that the heat treatment of the wafer is performed. The jig is formed in a donut shape in which a through hole is formed in the center portion, and a ring-shaped projection that protrudes in a completely annular shape without a slit is formed on a surface on which the semiconductor wafer is placed, and is used to support The semiconductor germanium wafer placed thereon has three or more protrusions of the same height concentrically formed. As described above, in the jig for heat treatment of the wafer according to the present invention, the annular projection 7 which protrudes in a substantially annular shape without slits is formed on the surface on which the semiconductor wafer is placed, and is used for supporting the mounting. The semiconductor germanium wafer has three or more protrusions of the same height concentrically formed. Therefore, when the semiconductor wafer is heat-treated by the jig, the wafer load is not shifted and can be stably supported. The semiconductor germanium wafer can effectively prevent slippage caused by the offset of the wafer load. Moreover, even if the semiconductor germanium wafer is moved by thermal shock or the like during heat treatment, the wafer can be stably supported by the support wafer with only a plurality of annular protrusions as compared with the above-mentioned conventional two-ring protrusion. The offset of the load does not occur, which prevents the occurrence of slippage.

Further, in the jig for heat treatment of the wafer according to the present invention, the donut shape in which the through hole is formed in the center portion is used, and in the heat treatment, the flow of the heat-treated gas can be improved for the semiconductor wafer to be mounted, and the flow can be prevented. Slip difference due to non-uniformity in temperature distribution within the wafer. Further, when the semiconductor germanium wafer is placed by forming the holes as described above, the semiconductor germanium wafer is not floated and displaced by the air between the semiconductor germanium wafer and the wafer heat treatment jig, and can be accurately carried. It is placed at a predetermined position and, therefore, can be stably supported for heat treatment. Therefore, the jig for heat treatment of a wafer according to the present invention can prevent the unevenness of the wafer load and the unevenness of the temperature distribution in the wafer, and can significantly suppress the slippage caused by these factors. Further, it is preferable that the outer diameter of the jig for heat treatment of the wafer is 5% to 20% larger than the diameter of the semiconductor wafer to be supported. Thus, if the outer diameter is larger than the diameter of the semiconductor germanium wafer to be supported by 5% or more, for example, when the heat treatment jig is placed on the wafer for vertical heat treatment, heat treatment is performed even in the wafer heat treatment. The semiconductor ruthenium wafer of the above-mentioned 8200919554 is moved in the heat treatment, and the outer diameter of the jig for the heat treatment of the wafer is large, and the semiconductor ruthenium wafer can be effectively prevented from protruding from the heat treatment jig for external contact with the outside. In addition, if it is a large one within 20%, it is sufficient to prevent deterioration of heat treatment efficiency. In this case, the diameter of the hole formed in the central portion of the jig for heat treatment of the wafer is preferably from 10% to 40 f of the outer diameter of the jig for heat treatment of the wafer.

In this case, if the diameter of the hole formed in the central portion of the jig for heat treatment of the wafer is more than 10% of the outer diameter of the jig for heat treatment of the wafer, the flow of the gas during the heat treatment can be more effectively improved. It can improve the uniformity of temperature distribution in the wafer. Further, when the semiconductor wafer is placed on the jig for heat treatment of the wafer, it is easier to discharge the air between the semiconductor wafer and the jig for heat treatment of the wafer, and it is easy to be placed at a predetermined position. In addition, if it is within 40%, the hole will not be too large and will not affect the strength of the semiconductor wafer used to support it. Preferably, the annular projection has a width of 2 mm or less and a height of 1 mm J. 3 mm °. If the width of the annular projection is 2 mm or less and the height is 3 mm or less, the annular shape is formed. The size of the protrusions is not too large and it is difficult to form a gap. Therefore, it is possible to more effectively prevent damage to the semiconductor wafer which is supported by the annular projections due to the notch of the annular projection, and the notched chips become fine particles and adhere to the surface of the semiconductor wafer. 9 200919554 In addition, if the height is 1 mm or more, the support portion of the semiconductor germanium wafer is not too low, and the semiconductor germanium wafer can be sufficiently prevented from contacting the portion other than the annular bump. Further, it is preferable that the three or more annular projections are formed at intervals of 2 m m to 10 m apart.

In this way, if three or more annular protrusions are formed at intervals of 2 mm to 10 mm, respectively, the annular protrusions are formed at an appropriate interval, and the wafer load caused by the interval being too narrow or too wide can be effectively prevented. Offset. Preferably, the three or more annular projections are formed in the radial direction of the jig for heat treatment of the wafer in the field of 50% to 80% of the radius of the heat treatment jig. In this way, if three or more annular protrusions are formed in the radial direction of the jig for heat treatment of the wafer, in the field of 50% to 80% of the radius of the heat treatment jig for the wafer, the wafer can be more reliably reduced. The stress caused by the weight of the wafer itself around the center and the wafer. Therefore, it can be stably supported, and the offset of the wafer load can be further prevented. Further, the cross-sectional shape of the annular projection is preferably a triangular shape or an arc shape. Thus, if the cross-sectional shape of the annular projection is triangular or curved, the contact area with the semiconductor wafer can be prevented from expanding beyond the necessary range, and the slippage can be prevented more. The jig for heat treatment of the wafer may be composed of tantalum carbide (S i C ) or coated with S i C on carbon by a chemical vapor deposition (CVD) method. 10

200919554 In this way, if it is composed of S i C, the strength can be higher, and the semiconductor germanium wafer can be more accurately supported. Further, if the S i C is coated on the carbon by the C V D method, the processing can be performed at a low cost, and the cost of manufacturing the annealed wafer can be reduced. Further, the thickness of the plate-shaped heat treatment jig for the wafer is preferably 2 mm or more. As described above, the thickness of the jig-shaped wafer heat-treating jig is 2 mm, and when the semiconductor wafer is placed and horizontally supported, the charging strength is obtained. Moreover, the present invention provides a wafer boat for vertical heat treatment, which is characterized in that it has at least a top plate, a bottom phase, and a plurality of pillars fixed between the top plate and the bottom plate; Each of the plurality of pillars is formed to horizontally support the plurality of support portions of the semiconductor wafer, and each of the plurality of support portions for supporting the wafer heat treatment can be mounted on the plurality of pillars, and the plurality of support portions can be mounted on the plurality of support portions on. In the case of the wafer for heat treatment of the present invention, the wafer for heat treatment of the wafer of the present invention can be moved by the semiconductor wafer on the jig for heat treatment of the wafer during heat treatment. Andi support. Further, the semiconductor wafer can be placed on the semiconductor wafer at a predetermined position, and the flow of the gas in the heat treatment can be improved to make the temperature distribution in the wafer uniform. Therefore, it is possible to extremely suppress the occurrence of slippage in the semiconductor germanium wafer. Moreover, the plurality of sheets can be heat-treated at one time, and the difference between the above and the number of the units can be efficiently obtained. The heat-sliding method described in the above-mentioned two-quality semiconductor chopping wafer. For example, the jig for heat treatment of a wafer and the vertical wafer boat having the jig of the present invention can significantly suppress the difference in semiconductor wafers during heat treatment, and can significantly improve the yield of the device.

The 9th wafer is in the oxygen state, the wafer force is slipping.

The internal drawing is smaller than the force, and the embodiment is described. Hereinafter, the embodiment of the present invention will be described, but the present invention is not limited thereto. Conventionally, when the semiconductor germanium wafer is heat-treated, for example, the jig shown in Fig. 5 to Fig. is used. However, in the semiconductor crucible after the heat treatment, a slippage difference occurs. The inventors of the present invention have made an effort to study the slippage of the wafer, and in particular, the high-temperature heat treatment for the purpose of diffusion or impurity diffusion may cause internal stress due to the weight of the wafer itself or internal temperature distribution. The thermal distortion stress caused by the non-uniformity, etc., which should exceed a certain critical value, will cause crystal defects in the wafer, that is, (slip difference row). On the other hand, in order to prevent slippage caused by stress deviation caused by the weight of the wafer itself, the inventors have found that, as shown in the ninth aspect, the semiconductor wafer is supported by a ring-shaped protrusion. , can reduce the center of the wafer, the periphery of the wafer due to the heavy stem of the wafer itself should be able to support more stable. However, the inventors of the present invention have learned from the heat treatment experiment for wafer heat treatment shown in FIG. 9 that the semiconductor wafer is bounced due to thermal shock in the heat treatment 12 200919554, such as when the temperature is raised. Conventional wafer heat treatment jigs have only two annular protrusions and few support points. Therefore, the support of the semiconductor wafer is unstable, and the wafer load is shifted, thereby causing slippage. Poor row. Further, the inventors have found that the number of the annular projections supported by the semiconductor wafer is three or more. Therefore, even if the wafer is moved during the heat treatment, the number of the annular projections can be prevented. The offset of the wafer load, / suppresses the occurrence of slippage. C' Fig. 1 shows a comparison result between the number of annular projections performed by the inventors and the area where the slippage is generated. As shown in Fig. 10, when the number of the annular projections is three or more, the occurrence of the slippage row can be greatly suppressed. Further, in this experiment, the annular projections protruded in a full annular shape and formed concentric circles of the same height. In addition, it is used in the center part to form a hole. Furthermore, the inventors have found that if a through hole is formed in the center portion, the gas flow during the heat treatment can be improved, and the temperature distribution in the wafer can be uniformly adjusted to prevent the unevenness of the temperature distribution in the wafer. The hot distortion should be caused by the slippage of the force. Fig. 11 shows the results of comparison between the presence or absence of the hole and the occurrence area of the slippage performed by the inventors. From this, it is understood that the formation of the hole in the center portion suppresses the occurrence of the slippage row. Further, in the experiment, those having three annular projections and having a hole in the center portion were used. 13

200919554 From the above results, the inventors have found that, in order to form three wafer heat treatment tools having the above-mentioned annular projections and having holes formed at the center portion, the slippage difference can be particularly suppressed as compared with the prior art. Occurs to complete the present invention. Hereinafter, the wafer heat treatment tool of the present invention and the vertical heat treatment wafer boat including the same will be described in detail with reference to the drawings, but the present invention is not limited thereto. Fig. 1 is a view showing an outline of an example of a boat for heat treatment including the jig for heat treatment of a wafer according to the present invention. The vertical heat treatment wafer boat 1 of the present invention has a top plate 6 a, a bottom plate, and a plurality of pillars 4 struts 4 fixed between the top plate 6 a and the bottom plate 6 b respectively forming a plurality of grooves (grooves) 7 at the same height position. The convex portion is used as the jig support portion 2 for mounting the wafer heat treatment of the present invention. When the semiconductor wafer is heat-treated, the semiconductor wafer is placed on the wafer heat treatment fixture 3, and the wafer heat treatment fixture 3 is mounted on the support portion 2 of the same height of the pillar 4. In such a configuration, the plurality of semiconductor wafers are subjected to heat treatment. Further, the wafer boat 1 for vertical heat treatment of the present invention may be, for example, the same as the above, except for the jig 3 for crystal processing. Here, the above-described jig heat treatment jig 3 will be further described. The upper treatment and then the treatment limit the vertical 6b,. Each groove 7 3 is supported by a circular heat limit 14 200919554. Fig. 2 is a view showing an example of the jig for heat treatment of a wafer according to the present invention. Fig. 2(A) is a plan view and a second view (B). A section view. Further, Fig. 3 shows a state in which a semiconductor wafer is supported by a jig for heat treatment of a wafer. Further, as shown in Fig. 3, in the jig for heat treatment of the wafer, the diameter of the hole 10 in the center portion is 3 a, and the minimum radius of the field forming the annular protrusion 1 1 is 3 b, forming a ring shape. The maximum radius of the protrusion 1 1 field is 3 c, the outer diameter of the heat treatment fixture for the wafer is 3 d, the thickness of the wafer heat treatment fixture is 3 e, and the height of the annular protrusion is 3 f (from the half for mounting) The distance from the (mounting) surface of the S-body wafer is 1 2, and the radius of the wafer heat treatment is 3 r. As shown in Fig. 2(B), first, the jig for heat treatment of the wafer 3 has a plate shape and is different from the disk-shaped jig having the separator surrounding the outer edge. In this way, the outer edge is not provided with a separator, and the conductor placed on the jig for heat treatment of the wafer heat treatment can be prevented from colliding with the separator and being damaged. The size of the jig for heat treatment of the wafer is not particularly limited. For example, the outer diameter 3 d may be larger than that of the semiconductor wafer to be supported (from 5% to 20% of the diameter Wd). Even if the semiconductor wafer is moved in the horizontal direction due to thermal shock or the like in the heat treatment, it does not protrude from the jig for heat treatment of the wafer heat treatment, and the pillar 4 located at the position of the fixture 3 for surrounding the heat treatment of the wafer can be prevented. Collision with the semiconductor germanium wafer. 'The outer diameter of the wafer heat treatment fixture 3 can be appropriately set 3 d depending on the influence on the heat treatment. Further, the thickness of the plate-shaped heat treatment fixture 3 is 3 e It is also not limited, and it can be determined in accordance with the weight of the semiconductor wafer to be mounted, etc., and the large-scale guide is used because of the semi-straightness. 200919554 For example, by making 2mm or more, it is ensured. The strength of the fixture. B) A) Wafer empty pass round 矽 treatment crystal ring bleed 5

Further, in the center portion of the jig for heat treatment of the wafer heat treatment, as shown in Fig. 2, a hole 10 which penetrates the jig 3 for heat treatment of the wafer is formed, as shown in Fig. 2 (shown as a donut shape) Therefore, when the semiconductor ruthenium wafer is placed on the round heat treatment jig 3, the gas existing in the field surrounded by the annular projections existing between the semiconductor ruthenium wafer and the crystal heat treatment jig 3 can be used. It is pushed out to the opposite side of the semiconductor wafer of the wafer heat treatment jig 3 via the via hole 10. Therefore, it is not correct by the interference of the air between the semiconductor germanium wafer and the crystal heat treatment jig 3 The semiconductor wafer is placed at a predetermined position on the jig for heat treatment of the wafer. In contrast, when the hole 10 is not formed, excess air between the semiconductor wafer and the heat treatment fixture 3 for the wafer is Since there is no channel for discharging the opposite side of the jig 3 on the wafer, the gap between the semiconductor wafer and the wafer heat treatment jig 3 (like protrusion) is only from the same side as the semiconductor circle. , before the semiconductor wafer is placed, it is placed horizontally. At this time, this Excess air represses the semiconductor wafer and is difficult to bleed. Therefore, the semiconductor wafer is slightly floated, and lateral shift occurs, and the semiconductor wafer is placed at a predetermined position. As described above, in the present invention The semiconductor germanium can be placed in the correct position by the hole 10, and can be stably supported on the annular protrusion. Therefore, the offset of the wafer load can prevent the slippage from occurring. 10, the movement of the gas during the heat treatment can be improved. That is, the gas can also flow into the back side of the semiconductor wafer, so that the heat conditions are uniformized, and the temperature distribution in the wafer can be made uniform. Therefore, it can be prevented 16 200919554 The slippage difference caused by the unevenness of the temperature distribution. Further, the size of the hole 10, for example, the diameter 3a can be set to 10% to 4 of the outer diameter of the wafer heat treatment jig 3 d. 0%. If the hole 10 is at this level, when the semiconductor wafer is placed, the air can pass through the opposite side of the wafer heat treatment jig 3 more smoothly, and the wafer heat treatment is not greatly impaired. With a strength of 3, it can fully support the semiconductor The size of the hole 10 is not particularly limited, and may be set according to the size of the semiconductor wafer, etc. Further, the shape of the hole 10 is not limited to a circular shape, and any shape may be used. The mounting surface 12 of the plate-shaped wafer heat treatment jig 3 on which the semiconductor wafer is placed is formed with a projection (annular projection 11) that protrudes completely without a slit from the surface. The protrusions 1 1 are formed concentrically three or more, and the individual heights 3 f are the same. As described above, the inventors have found that the above-described annular protrusions 1 1 are investigated by examining the slippage due to heat treatment. In the case of three or more conventional wafer heat treatment jigs (two annular projections), it is possible to suppress the slippage caused by the offset of the wafer load. It is considered that if the number of the above-mentioned annular protrusions 1 1 is three or more, the number of support points for supporting the semiconductor germanium wafer is large, the stability of the support of the semiconductor germanium wafer is improved, and the semiconductor can be supported without load offset. Wafer. In particular, in the conventional jig for heat treatment of wafer heat treatment, when the semiconductor wafer is jumped and the placement position is shifted during heat treatment, even if the offset amount is slightly shifted, the load shift occurs, thereby causing slippage. The probability of poor row is high. 17 200919554 However, in the jig for heat treatment of wafer heat treatment 3 of the present invention, even if there is a shift in the semiconductor germanium wafer in the heat treatment, the semiconductor germanium wafer can be continuously supported and the load does not occur due to the large number of support points. Offset to prevent the occurrence of shifting. The annular protrusion 11 is formed in such a position as to reduce the weight of the wafer itself in the central portion and the peripheral portion of the semiconductor twin, for example, in the radial direction of the jig 3 for heat treatment of the wafer. It is preferable to form a field in which the radius of the jig 3 for heat treatment of the wafer is 50% to 80%. That is, the minimum radius 3 b of the field in which the annular protrusion 1 1 is formed is more than 50% of the radius 3 r of the jig for the heat of the wafer 3, and the maximum radius of the collar of the annular protrusion 1 1 is 3 c-wafer. It is preferable that the heat treatment jig 3 has a radius of 3 r of 80%. Further, the interval between the annular projections 1 1 is, for example, 2 mm 10 mm, whereby the load of the semiconductor germanium wafer can be appropriately dispersed in the annular projections 1 1 without any offset to support the semiconductor crucible. Wafer. Of course, the position at which the annular projections 11 are formed is not limited to this field, and the interval between the annular projections 1 is not limited, and may be formed at predetermined positions and positions. The size of the semiconductor wafer to be heat-treated can be determined locally. Furthermore, the size and shape of each of the annular projections 1 1 will be described. An example of the cross-sectional shape of the annular projection 1 1 is shown in Fig. 4 . These elements are not particularly limited, but are preferably, for example, 2 m or less in width and 1 mm to 3 mm in width. If it is such a size, the semi-conductive wafer can be sufficiently supported without contacting the mounting surface 12, and the circular sliding force of the annular projection can be prevented from being separated from the surface of the surface. 18 200919554 The inch is too large and easy to gap. Therefore, it is possible to prevent the semiconductor wafer from being damaged by the annular projections 11, and to prevent the annular projections from adhering to the surface of the semiconductor wafer in the form of fine particles. Further, the annular projection 11 may be a reversal of the groove of the disc, and the cross-sectional shape shown in Fig. 4(A) is triangular, or the cross-sectional shape shown in Fig. 4g is curved. If such a cross-sectional shape is to be placed in the contact area of the semiconductor germanium wafer supported thereon, it is narrowed, and the contact area can be prevented from being expanded to the necessary range ί '' & additionally, the annular protrusion 11 and the semiconductor接触 The contact area of the wafer, the thickness of the degree. It is considered that during the heat treatment, the semiconductor tantalum wafer and the wafer heat-treating tool 3 are thermally deformed, and on the other hand, the semi-conductive round slide on the wafer heat treatment jig 3 (ring protrusion Π) occurs. The deformation is moderated, but if the semiconductor germanium wafer and the annular protrusion 1 1 are excessively rubbed, or the surface of the annular protrusion 11 is excessively smooth, the germanium wafer and the annular protrusion 11 are partially fixed. The slip difference t, j is prevented from occurring in this case. For example, the shape of the protrusion 1 1 or the like can be appropriately determined. Further, the jig 3 for heat treatment of a wafer of the present invention described above is produced in the following manner.

First, SiC or the like which is a material of the crystal jig 3 is laminated on an appropriate base by a chemical vapor deposition (CVD) apparatus by a CVD method. Further, the material of the jig 3 for heat treatment is not particularly limited, but if it is a broken portion of the S i C notch, such as 5 (B), then, the above may be used. There may be a suitable process for the formation of contact, semiconductor rows. For the ring shape, if the Vapor is hot, the 19 200919554 has high strength and can fully support the semiconductor germanium wafer. Next, the base is removed by grinding or the like to obtain a SiC film which is only laminated. Then, by subjecting the member of such SiC to a process of forming the hole 1 and the annular projection 1 1, a predetermined wafer heat treatment jig 3 made of SiC is produced.

Further, as another manufacturing method, for example, a member made of carbon is subjected to a processing treatment, and a hole 10 and an annular protrusion 1 1 are formed first to obtain a predetermined shape, and then a surface layer is formed by a CVD method. A SiC film is used to manufacture a predetermined jig 3 for heat treatment of a wafer. In the case of such a jig, most of the jig for heat treatment of the wafer 3 is carbon, and therefore, it can be easily processed and manufactured at a lower cost. As described above, the jig 1 for heat treatment of a wafer for heat treatment of the present invention and the wafer boat 1 for vertical heat treatment including the jig of the present invention, in particular, the semiconductor ruthenium wafer are moved by thermal shock or the like even during heat treatment, and the semiconductor The germanium wafer also has no load offset and can be stably supported. In addition, since the flow of the gas in the heat treatment can be improved and the unevenness of the temperature distribution in the wafer can be eliminated, the occurrence of these factors can be extremely effectively prevented. Slip difference row. As a result, high quality annealed wafers without slippage can be obtained at very high yields. Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited thereto. (Example 1) The heat treatment for wafers of the present invention shown in Figs. 1 to 4 is used. The outer top of the outer diameter is the same

High-quality Same as the vertical vertical heat treatment boat for heat treatment of half a 6 hours and 1000 °C with a diameter of 300 mm. According to this, one thousand is used, and the fixture for heat treatment of the wafer used is 360 mm, and the diameter of the hole at the center is 120 mm. The cross-sectional shape is triangular, 2 mm wide and 2 mm high. The minimum radius of the shape is 90mm, three at 10mm intervals. As a result, slippage occurs in one thousand of the annealed wafers, and high-quality, high-quality, non-slip-and-slip-off high-quality retreat can be obtained (Example 2). In addition to the number of annular protrusions, six wafers are used. The heat treatment jig and the vertical heat treatment wafer boat are heat-treated. As a result, slip occurred in one thousand of the annealed wafers, and a high-yield, amorphous-annealed wafer was obtained in the same manner as in the first embodiment. (Comparative Example 1) Heat treatment was carried out by using a jig for heat treatment of a wafer and a boat for vertical heat treatment, except that the number of the annular projections was two. The annealed crystal of the conductor 矽 wafer is 2 mm thick, and the ring is formed into a bad protrusion. The concentric circular difference is only the fire wafer. Example 1 Phase and Example 1 Discontinuous Slip Only Displacement Example 1 Phase and Example 1 21 200919554 As a result, in a thousand sheets of annealed wafers, there are ten slippage rows, Compared with Example 1, the incidence of slippage is high and the yield is lowered. It is considered that since the number of annular protrusions is small, when the mounting position of the semiconductor wafer is shifted due to thermal shock or the like during heat treatment, the wafer load shift is concentrated, and slippage occurs due to this. Shift row. Thus, if the number of the annular projections is less than three, the slippage displacement due to the shift of the crystal load cannot be sufficiently prevented.

C (Comparative Example 2) The same heat treatment jig and vertical heat treatment boat as in Example 1 were used, except that no hole was formed in the center portion, and heat treatment was carried out in the same manner as in Example 1. As a result, in the one-thick annealed wafer, there were ten slippage rows, and compared with Example 1, the incidence of slippage was high, and the yield was lowered.

It is considered that since pores are not formed, it is difficult for gas to flow into the back side of the semiconductor wafer during heat treatment. Therefore, it is difficult to make the temperature distribution in the wafer uniform, and thus slippage occurs. Thus, if no holes are formed in the center portion, it is impossible to prevent the slippage caused by the unevenness of the temperature distribution in the wafer. In addition, it is considered that an offset occurs when the semiconductor germanium wafer is placed. (Comparative Example 3) The same wafer heat treatment jig and vertical heat treatment wafer boat as in Example 1 were used, except that the number of annular projections was two and no hole was formed in the center portion. Heat treatment is carried out. Further, the jig for heat treatment of the crystal of Comparative Example 3 was almost the same as that of the conventional one shown in Fig. 9. As a result, in the one-thick annealed wafer, there were 27 slip-prone rows, and the incidence of slippage was extremely high as compared with Example 1. It was a worse result than Comparative Example 1 and Comparative Example 2. (Comparative Example 4) The wafer heat treatment jig and the vertical heat treatment wafer boat were heat-treated in the same manner as in Example 1 except that the ring-shaped projections having the slits were not completely ring-shaped. As a result, in the one-thickness annealed wafer, there were fourteen slippage rows, and the incidence of slippage was higher and the yield was lower than that of the first embodiment. It is considered that the slit is formed by the annular projection, and the wafer load cannot be uniformly dispersed and supported, and the load is concentrated, thereby causing the slippage to occur. As described above, according to the present invention, the occurrence of slippage can be extremely reduced. According to this, it is possible to obtain a high-quality annealed wafer at a high yield, and it is possible to significantly reduce the occurrence rate of components and to improve the cost. Further, the present invention is not limited to the above embodiment. The above-described embodiments are merely illustrative, and the technical idea described in the patent application scope of the present invention has substantially the same configuration, and the same effect can be obtained, and any form is included in the technical scope of the present invention. Inside. 23 200919554 [Brief Description of the Drawings] Fig. 1 is a schematic view showing an example of a boat for vertical heat treatment of the present invention. Fig. 2 is a schematic view showing an example of a jig for heat treatment of a wafer according to the present invention, wherein (A) is a plan view and (B) is a cross-sectional view. Fig. 3 is an explanatory view showing a state in which a semiconductor wafer is supported by a jig for heat treatment of a wafer.

Fig. 4 is a schematic view showing an example of an annular projection, wherein (A) has a triangular cross-sectional shape and (B) has a curved cross-sectional shape. Fig. 5 is a schematic view showing an example of a conventional boat for vertical heat treatment. Fig. 6 is a view showing a state in which a wafer is placed on a conventional vertical heat treatment boat. Fig. 7 is a schematic view showing an example of a vertical heat treatment furnace. Fig. 8 is a schematic view showing a wafer supporting portion in a conventional vertical heat treatment wafer boat. Fig. 9 is a schematic view showing an example of a conventional one-piece wafer heat treatment jig. Fig. 10 is a graph showing the results of comparison between the number of annular projections and the area where slippage occurs. Fig. 1 is a graph showing the comparison of the presence or absence of a hole with the area where the slippage occurs. 24 200919554 [Explanation of main component symbols] 1 · Vertical boat for heat treatment 2 ·· Supporting part 3 : Fixture for heat treatment of wafer 4 : Pillar 6a : Top plate 6b : Base plate 7 : Groove (groove) 10 : 11 : Protrusion 12 : Mounting surface 210 : Vertical boat for heat treatment 211 : Groove 212 : Support portion 2 13 : Support portion 214 '• Pillar 215 '• Pillar 2 16 : Connecting member 220 : Vertical heat treatment furnace 222 • Reaction chamber 224 : Heating 226: gas introduction pipe 228: exhaust pipe 3 10 • jig for heat treatment of wafer 3 11 '·protrusion W : wafer 25

Claims (1)

200919554 X. Patent scope: 1. A jig for heat treatment of wafers, which is used for heat treatment of a plate-shaped wafer for heat treatment of a semiconductor wafer. The heat treatment jig of the wafer is formed into a circle at the center. An annular protrusion that protrudes in a ring shape on a surface on which the semiconductor wafer is placed is used to support a circle to be placed, and the annular protrusions are formed in three or more concentric shapes. 2. The outer diameter of the above-mentioned wafer heat treatment jig in the heat of the wafer as described in claim 1 is larger than the diameter of the above-mentioned conductor 矽 wafer by 5% to 20%. 3. 10% to 40% of the outer diameter of the wafer heat treatment jig formed in the center portion of the wafer heat treatment jig in the heat of the wafer according to the first aspect of the invention. Horizontally placed at 10% to 40% of the outer diameter of the wafer heat treatment jig formed in the center portion of the wafer heat treatment jig in the heat of the wafer described in the second paragraph of the patent application. The characteristics are as follows: the sweetness of the through-hole is a slit-free full semiconductor twin crystal with the same height of the jig, the semi-purpose jig to be supported, the diameter of the hole, and the fixture for the purpose The hole of the wafer heat treatment according to the first aspect of the invention, wherein the annular projection has a width of 2 mm or less and a height of 1 mm to 3 mm. 6. The jig for heat treatment of a wafer according to claim 2, wherein the annular projection has a width of 2 m m or less and a height of 1 m m to 3 m m. 7. The jig for heat treatment of a wafer according to claim 3, wherein the annular projection has a width of 2 m m or less and a height of 1 m m to 3 m m. 8. The jig for heat treatment of a wafer according to claim 4, wherein the annular projection has a width of 2 mm or less and a height of 1 mm to 3 mm. 9. The jig for heat treatment of a wafer according to claim 1, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. The jig for heat treatment of a wafer according to the second aspect of the invention, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. The jig for heat treatment of a wafer according to claim 3, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. The jig for heat treatment of wafers according to the fourth aspect of the invention, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. The jig for heat treatment of a wafer according to claim 5, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. The jig for heat treatment of a wafer according to claim 6, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. The jig for heat treatment of a wafer according to claim 7, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. The jig for heat treatment of a wafer according to claim 8, wherein the three or more annular projections are formed at intervals of 2 mm to 10 mm. 1. The jig for heat treatment of a wafer according to claim 1, wherein the three or more annular protrusions are formed in the radial direction of the wafer in the radial direction of the heat treatment jig 28 200919554 Use the radius of the fixture from 50% to 80%. 1. The jig for heat treatment of a wafer according to claim 2, wherein the three or more annular projections are formed in the radial direction of the heat treatment jig for the wafer. With a radius of 50% to 80% of the field. 1. The jig for heat treatment of a wafer according to claim 3, wherein the three or more annular projections are formed in the radial direction of the heat treatment jig for the wafer. With a radius of 50% to 80% of the field. The jig for heat treatment of a wafer according to the fourth aspect of the invention, wherein the three or more annular protrusions are formed in the radial direction of the heat treatment jig for the wafer. With a radius of 50% to 80% of the field. The jig for heat treatment of a wafer according to the fifth aspect of the invention, wherein the three or more annular protrusions are formed in the radial direction of the heat treatment jig for the wafer. With a radius of 50% to 80% of the field. 2. The jig for heat treatment of a wafer according to claim 6, wherein the three or more annular protrusions are formed in the radial direction of the heat treatment jig of the wafer. Use the radius of the fixture from 50% to 80%. The jig for heat treatment of a wafer according to the seventh aspect of the invention, wherein the three or more annular protrusions are formed in the radial direction of the heat treatment jig for the wafer. With a radius of 50% to 80% of the field. 2. The jig for heat treatment of a wafer according to claim 8, wherein the three or more annular protrusions are formed in the radial direction of the heat treatment jig for the wafer. With a radius of 50% to 80% of the field. The jig for heat treatment of a wafer according to claim 9, wherein the three or more annular projections are formed in the radial heat treatment jig in the radial direction of the wafer heat treatment jig The radius is 50% to 80% of the field. 2. The jig for heat treatment of a wafer according to claim 10, wherein the three or more annular projections are formed in the radial direction of the wafer for heat treatment of the wafer. The radius of the fixture is 50% to 8 0 30 200919554% of the field. [2] The jig for heat treatment of a wafer according to the first aspect of the invention, wherein the three or more annular projections are formed in the radial direction of the wafer in the radial direction of the jig for heat treatment of the wafer Use the radius of the fixture from 50% to 80%. The jig for heat treatment of a wafer according to claim 12, wherein the three or more annular protrusions are formed on the wafer in a radial direction of the jig for heat treatment of the wafer. The heat treatment jig has a radius of 50% to 80%. [2] The jig for heat treatment of a wafer according to claim 13, wherein the three or more annular projections are formed in the radial direction of the wafer for heat treatment of the wafer. The radius of the fixture is 50% to 80% of the field. The jig for heat treatment of a wafer according to claim 14, wherein the three or more annular protrusions are formed in the radial direction of the wafer in the radial direction of the jig for heat treatment of the wafer. Use the radius of the fixture from 50% to 80%. The above-mentioned three or more annular projections in the radial direction of the wafer heat treatment jig are formed in the crystal in the above-mentioned wafer heat treatment jig according to the fifteenth aspect of the invention. Round heat treatment jigs have a radius of 50% to 80%. 3. The jig for heat treatment of a wafer according to claim 16, wherein the three or more annular projections are formed in the radial direction of the wafer for heat treatment of the wafer. The radius of the fixture is 50% to 80% 'in the field. The jig for heat treatment of a wafer according to the first aspect of the invention, wherein the annular projection has a triangular or curved cross-sectional shape. 3. The jig for heat treatment of wafer crucible according to Item 3, wherein the annular projection has a triangular or curved cross-sectional shape. 3. The jig for heat treatment of a wafer according to the first aspect of the invention, wherein the heat treatment jig of the wafer is formed of SiC or SiC is coated with carbon on the carbon by a CVD method. 3. The jig for heat treatment of a wafer according to claim 4, wherein the heat treatment jig is made of SiC or SiC is coated with carbon by CVD. The jig for heat treatment of a wafer according to the first aspect of the invention, wherein the thickness of the plate-shaped heat treatment tool for a wafer is 2 mm or more. The jig for heat treatment of a wafer according to the third aspect of the invention, wherein the thickness of the plate-shaped heat treatment tool for a wafer is 2 mm or more. A javel for heat treatment of a wafer according to any one of claims 1 to 38, characterized in that it has at least: a top plate, a bottom plate, and a fixing a plurality of pillars between the top plate and the bottom plate; a plurality of support portions for horizontally supporting the semiconductor germanium wafer are respectively formed on the plurality of pillars, and respectively supporting a semiconductor wafer of the semiconductor wafer The jig for heat treatment of the wafer may be carried on the plurality of support portions. 33