200919509 九、發明說明： 【考务明戶斤屬4支彳椅4員士成】 本發明係有關於金屬電容器及其製造方法，更詳而言 之，係有關於以金屬材質作為電解質而可大幅改善導電度 ' 5 之金屬電容器及其製造方法。200919509 IX. Description of the invention: [Certificate of the Ming Dynasty, 4 sets of 4 chairs, 4 members of the staff] The present invention relates to a metal capacitor and a manufacturing method thereof, and more specifically, a metal material as an electrolyte A metal capacitor that greatly improves the conductivity '5 and its manufacturing method.
【先前技術;J 背景技術 以往，已有|呂電解電容器（aluminuin electrolytic capacitor)作為使從電源電路輸出之電源平滑而成固定值、 10或作為低頻旁路使用之電容器，其製造方法如下。 首先，為了增加紹箔的表面積以增加靜電電容，實施 餘刻（etching)銘箔（aiuminum f〇il)表面之步驟。在钮刻結束 後，則實施在紹落形成介電體之化學轉化(f〇rming)步驟。 在透過蝕刻與化學轉化步驟分別製造出陰極與陽極的鋁箔 15後，則實施依製品的長度將鋁箔與電解紙剪成所需尺寸的 寬度之裁斷(slit)步驟。裁斷結束後，實施將作為拉出端子 之鋁導線棒接合至鋁箔之連結(stitch)步驟。 在鋁箔與電解紙之裁斷結束後，實施將電解紙插入陽 極鋁箔與陰極鋁箔之間，然後捲成圓筒狀，且以膠帶黏著 20使其不鬆開之捲繞(winding)步驟。捲繞步驟結束後，將捲 好的元件插入鋁盒，然後實施注入電解液之浸潰 (impregnation)步驟。電解液注入結束後，實施用封口材料 封住鋁盒之捲邊(curling)步驟。在捲邊步驟結束後，實施修 復介電體損傷之老化(aging)步驟，以完成銘電解電容器之 200919509 組裝。 i:發明内容3 發明所欲解決之課題 5 10 15 然而，於最近開發之電子機器中使用如此製造之習知 鋁電解電容器時，會有以下之問題。 驾去銘電解電谷益因使用電解液作為電解質，故導電 度低，有高頻區之電阻顯著增加、電容器之阻抗增加之問 題此外S電容器之電阻高時，高頻特性會降低，且 ESR(EqmValem Series ；等效争聯電阻)變高電 f器之可#性降低，有損失增加之問題。X，由於阻抗變 高’起因於連波電流之發熱變高，可能會產生發煙、起火， 有安全性及耐環祕*適合的之問題。 本發明之目 質作為電解質， 導體作為電解質 及其製造方法。 的在於解決歧_，且提供❹金屬材 使導電度相較於過去使肖電解液或有機半 ’可改善華0〜!，_，_倍之金屬電容器 解質==目的在於提供藉由使用金屬材質作為電 ° 化、低耗損化、減少漣波發熱、長# 财熱安全性、不發煙、不起火及環境可13、 及其製造方法。 今益 解決課題之手段 為達成前述目的，本發明之金屬電容器，包含.金屬 構件’储有配置多個貫魏所形成之貫通 ㈣成於前物絲输⑽ ^ 20 200919509 屬氧化層，係形成於金屬構件；絕緣層，係在金屬構 =極拉出部與多個貫通孔分別露出之狀態下，形成於金屬 -化層’及主電極層，係以填塞形成於金屬構件之貫通孔 形成部的多個貫通孔之狀態所形成，並且導線端子分別連 5、’、《於金屬構件之電極拉出部與前述主電極層。 本發明之金屬電容器之製造方法，包含：彻dc蚀刻 方糾母材形成配置有多個貫通孔之貫通孔形成部，且形 成-體地形成有電極拉出部與填塞部之金屬構件的步驟； ，金屬構件—體地形成貫通孔形成部、電極拉出部及填塞 10 Z後，彻陽極氧化方法在金屬構件形成金屬氧化層 的化 子轉化步驟，在金屬構件之電極拉出部露出至外部之狀態 下’利用CVD方法將絕緣層形成於主電極層與金屬構件的 步驟，及利用電鍍或無電電鍍方法，在填塞已形成於貫通 孔形成部之金屬氧化層的多個貫通孔之狀態下，形成主電 15 極層的步驟。 發明效果 本發明之金屬電容器提供藉由使用金屬材質作為電解 質’相較於過去使用電解液或有機半導體作為電解質，可 使導電度改善10,0004,000,000倍，且可直列積層，可高電 20壓化，並且電安全性高，可改善小型化、低耗損化、低ESR、 低阻抗化、耐熱安全性、不發煙、不起火及環境耐受性之 優點。 C實施方式3 實施發明之最佳形態 7 200919509 【第1實施例】 以下參照圖式說明本發明第1實施例之金屬電容器構 造。 第1圖係本發明第1實施例之金屬電容器的立體圖，第2 5圖係第1圖所示之金屬電容器之A1-A2線上的截面圖，第3 圖係第1圖所示之金屬電容器之B1_B2線上的截面圖。如第工 圖至第3圖所示，本發明之金屬電容器1〇係由金屬構件u、 金屬氧化層12、種子電極層13、主電極層14、絕緣層丨5、 第1導線端子21、第2導線端子22及密封構件30構成，且構 10成為具無極性，但前述種子電極層13依使用者亦有不適用 的時候。以下，依序說明本發明之金屬電容器1〇的各構造 如下。 如第4b圖所示，金屬構件u形成有由配置多個貫通孔 lid所形成之貫通孔形成部Ua，並於前述貫通孔形成部ιι& 15之兩側分別形成電極拉出部lib、及填塞部11c。此外，前 述貫通孔形成部11a、電極拉出部llb、及填塞部lle互相係 一體地形成。多個貫通孔lld所形成之金屬構件丨丨係適用多 種金屬材質，其中亦適用鋁(A1)、鈮(Nb)、钽(Ta)、鈦(Ti) 及錯(Zr)中任一者，且形成於貫通孔形成部lla之多個貫通 2〇孔lld係形成為圓形或多角形。 金屬氧化層12形成於金屬構件11之表面。即，如第1圖 所示’金屬氧化層12係形成於金屬構件11之全部表面，且 依據金屬構件11之材質，適用氧化鋁(ai2o3)、五氧化二銳 (Nb2〇5)、氧化鈮(NbO)、五氧化二钽(Ta205)、二氧化鈦(Ti〇2) 200919509 及二氧化鍅(Zr02)中任一者。 如第4d圖所示，絕緣層15在金屬構件η之電極拉出部 11b與形成於貫通孔形成部lla之多個貫通孔Ud分別露出 之狀態下，形成於金屬氧化層丨2。此種絕緣層15亦可在形 5成多個主電極層14後形成。即，絕緣層15在金屬構件丨丨之 電極拉出部lib露出至外部之狀態下，形成於主電極層14與 金屬構件11。更具體而言，絕緣層15在金屬構件u之電極 拉出部lib露出至外部之狀態下，分別形成於與電極拉出部 lib對向之填塞部llc與貫通孔形成部Ua之上/下側面與主 10電極層14。此種絕緣層15適用絕緣膠帶(tape)或樹脂系列的 材質。 種子電極層13形成於已形成在金屬構件u之貫通孔形 成部lla的金屬氧化層12。如第i圖至第3圖及第如圖所示， 種子電極層13形成於包含多個貫通孔lld表面且由貫通孔 15 Hd所开>成之金屬氧化層12。然而，前述種子電極層13依使 用者之要求亦有不適用的時候。 主電極層14以填塞形成於金屬構件丨丨之貫通孔形成部 lla的多個貫通孔lid之狀態，形成於已形成在貫通孔形成 部lla之種子電極層13。主電極層14在填塞多個貫通孔Ud 20之狀態下，形成於貫通孔形成部lla之兩面，即，上/下側表 面。形成於種子電極層13之主電極層14與種子電極層13分 別適用鋁(A1)、銅(Cu)、鋅(Zn)、銀(Ag)、鎳(Ni)、錫（Sn)、 銦(In)、鈀(Pd)、白金(Pt)、鈷(c〇)、釕(Ru)及金(Au)中任一 200919509 如第3圖所不’第1導線端子21連結於金屬構件11之電 極拉出部lib ’且第2導線端子η連結於主電極層μ。於主 電極層14之任一面更具有連結第2導線端子22之導線性接 著層\6,以改善連結於主電極層I4之第2導線端子22的接著 5力藉由拔封構件3〇密封連結於第1及第2導線端子2卜u 之金屬構件11。為在第1及第2導線端子21、22露出至外部 之狀態下密封金屬構件11，密封構件3〇適用模製材質或内 部中空的覆蓋構件。此外，密封構件3〇係以板狀或圓筒狀 中之任-形狀密封金屬構件u，且以前述圓筒狀密封時， 10金屬構件11係於捲繞後密封。 參照附加圖式說明具有前述構造之本發明第1實施例 的金屬電容器10之製造方法如下。 準備如第4a圖所示之金屬材質之膜或箔（f〇il)等母材 1並如第4b圖所示，使用Dc(Direct Current)钮刻方法形成 15配置母材1之多個貫通孔lid之貫通孔形成部11a，且在一側 與另一側形成一體地形成有電極拉出部nb與填塞部Uc之 金屬構件11。 前述蝕刻方法係於約40〜60°C下以磷酸1%水溶液對母 材1進行1〜3分鐘左右之前處理步驟，並於7〇〇c〜9(rc下以混 2〇合有硫酸、磷酸及鋁等的混合物進行2〜5分鐘左右的1次蝕 刻°此時’電流密度為1〇〇至40〇111八/(：1112。然後，再於約75〜85 C左右下以混合有硝酸、鱗酸及鋁等的混合物進行5〜10分 鐘左右的2次蝕刻。此時’電流密度為10至l〇〇mA/cm2。在 前述餘刻結束後’於6〇。(：至70。(：下以硝酸30〜70g/l溶液進行 200919509 5〜15分鐘左右的化學洗淨。亦可視使用者之要求，更進行 多次前述化學洗淨。 形成於貫通孔形成部11a之多個貫通孔lld係形成圓筒 狀或多角形地貫通’且分別之直徑係形成為1μπ1至1〇〇μΐη。 5此外，前述貫通孔lid除了 DC蝕刻方法以外，可使用濕式 - 或機械性鑽孔、雷射鑽孔輕易地形成。 如第4c圖所示，在貫通孔形成部lla、電極拉出部llb、 及填塞部11c 一體地形成於金屬構件η後，利用陽極氧化方 法實施在金屬構件11形成金屬氧化層丨2之化學轉化步驟。 10 前述陽極氧化方法首先以80。(：〜100。(：之去離子 (deionized water)進行1〜15分鐘左右的加熱(Boiling)步驟， 且一面於硼酸與硼酸銨的水溶液中以丨2〇〜I50v的電壓進行 氧化1次，以慢慢使前述水溶液之濃度與電壓改變，一面進 行多次(2〜3次）氧化。然後，以預定溫度，例如400〜600°C 15進行熱處理’再次進行再化學轉化。又，進行副產物處理， 以去除再化學轉化時所產生的副產物。之後，再次反覆進 行再化學轉化與熱處理。然後，進行多次預定的洗淨步驟， 以拭去硼酸或磷酸。 如第 4d圖所示’利用 CVD(Chemical Vapor Deposition ; 20 化學氣相沉積）方法’在金屬構件11之電極拉出部lib露出 至外部之狀態下，於主電極層14與金屬構件11形成絕緣層 15，以形成貫通型金屬構件i〇a。前述絕緣層15適用絕緣膠 帶(tape)或樹脂系列的材質。於此作為參考適用CVD，但亦 可適用使用絕緣樹脂或絕緣油墨的浸潰(Diping)步驟、使用 11 200919509 喷墨印刷（Ink-jet printing)或網版印刷（Screen printing)之喷 霧(Spray)步驟中任一者。 如第4e圖所示’如使用電鍍或無電電鍍方法滲透，在 形成於貫通孔形成部lla之金屬氧化層12，形成種子電極層 5 13。前述種子電極層13依使用者之要求亦有不適用的時 候’但此處形成有種子電極層13。 在種子電極層之形成步驟中，以作為活化劑(Activator) 之常溫的硫酸鈀水溶液浸潰1〇〜數百秒後，於常溫下浸潰洗 淨1秒〜30秒’以去除表面活化劑。於鎳無電電鍵中使用鎳 10磷酸鹽水溶液’適當地調節pH範圍(pH為4〜8)或溫度(50〜80 °C)，電鍍5〜20分鐘。此時，可僅在貫通孔nd内部形成種 子電極層13。然後，進行電鍍步驟與1〇〇它以下之乾燥步驟。 如第4f圖所示，在形成多個種子電極層丨3後，利用電 鍍或無電電鍍方法以各種子電極層13為媒介，形成主電極 15層14 ’以填塞已形成於金屬構件11之貫通孔形成部lla之多 個貫通孔lid。 用以形成前述主電極層14之電鍍係將硫酸鎳或氯化鎳 水溶液設為pHl至5，維持溫度為30〜7〇。(：，且施加電流密度 為20〜120mA/cm2之DC電流，實施電鑛，以形成主電極層 20 14。又，用以形成主電極層I4之無電電鍍係將70〜90°C間之 鎳磷酸水溶液調節在pH5〜7之間，且於其中對形成有種子電 極層13之素材進行10〜30分鐘無電電鍍，並進行用以去除表 面的電鍍液成分之洗淨與l〇〇°C以下之乾燥，形成主電極層 14 〇 12 200919509 如第4g圖所示於金屬構件11之電極拉出部llb與主電 極層！4分別連結第i及第2導線端子2卜22。在連結扪及第 2導線端子21、22之步驟’可更加具有於連結有第2導線端 子22之主電極層14形成導電性接著層16的步驟，以改善第】 5及第2導線端子2卜22之接著力，電性接著層16適用塗布 金屬接著劑或焊料膏之方法、電鍍方法及無電電鍛方法中 任一者。 10 如第3圖所示，在連結第1及第2導線端子2卜22後，在 W及第2導線端子21、22露出至外部之狀態下，以密封構 件30密封金屬構件11。於密封金屬構件丨丨時， 質或内部中空之覆蓋構件密封，以製造金屬電容器1〇。 【第2實施例】 參照附加圖式說明使用構成本發明第i實施例之金屬 電容器10之貫通型金屬構件1〇a的具無極性之金屬電容器 15 110如下。 如第5圖所示，本發明第2實施例之金屬電容器i 1〇係由 多個貫通型金屬構件10a、導電性接著層16、第3導線端子 23、第4導線端子24及密封構件3_成，且構成為具無極 性，依序說明各構造如下。 20 乡個貫通型金屬構件1〇3分別由金屬構件11、金屬氧化 層12、種子電極層13、主電極層14、絕緣層15構成，且由 於各構造與第4d圖所*之貫通型金屬構件响目同，故省略 詳細說明。具有前述構造之多個貫通型金屬構件伽，在電 極拉出部lib朝向-侧與另-側方向之狀態下交互地積層。 13 200919509 導電丨生接著層〗6分別設置於多個貫通型金屬構件1 〇 a =主電極層14之間，使多個貫通型金屬構件IGa交互地接 从第‘線立而子23連結於多個貫通型金屬構件i〇a之電極 拉出部11b朝向—側之貫通型金屬構件l〇a的電極拉出部 5 Ub即，如第5圖所示，第3導線端子23連結於分別形成在 »又置於左側之多個貫通型金屬構件工如的電極拉出部仙。 第4導線端子24連結於多個貫通型金屬構件i〇a之電極 拉出部iib朝向另_側之貫通型金屬構件1〇a的電極拉出部 lib，構成具無極性之金屬電容器u〇。即如第5圖所示， 第4導線端子24連結於設置在右側之？個貫通型金屬構件 10a的電極拉出部llb。 於具有相同極性之金屬氧化層12所形成之貫通型金屬 構件10a的電極拉出部llb，分別連結第3導線端子23及第4 導線端子24，藉此，金屬電容器11〇會具無極性。 15 在第3及第4導線端子23、24露出至外部之狀態下，密 封構件30岔封第3及第4導線端子23、24連結之多個貫通型 金屬構件1 〇a，保護由外部積層的多個貫通型金屬構件1 〇a。 【第3實施例】 參照附加圖式說明使用構成本發明第1實施例之金屬 20電容器10的貫通型金屬構件10a之具極性的金屬電容器12〇 如下。 如第6圖所示，本發明第3實施例之具極性的金屬電容 器120係由多個貫通型金屬構件l〇a、導電性接著層16、第} 極性導線端子25、第2極性導線端子26、及密封構件3〇構 14 200919509 成，依序說明該等構造如下。 如第5圖所示，多個貫通型金屬構件1〇a分別由金屬構 件11、金屬氧化層12、種子電極層13、主電極層14、及絕 緣層15構成，且由於各構造與第4d圖所示之貫通型金屬構 5件10a相同，故省略詳細說明。多個貫通型金屬構件1〇a在 電極拉出部llb朝向相同方向之狀態下積層。即，如第6圖 所示’僅於左側設置電極拉出部11b。 導電性接著層16分別設置於多個貫通型金屬構件1〇a 之主電極層14之間，使多個貫通型金屬構件10a交互地接 1〇 著。 第1極性導線端子25連結於多個貫通型金屬構件1〇a之 電極拉出部Ub朝向-側之貫通型金屬構件1Ga的電極拉出 部爪。在以第丨極性導線端子25作為陽㈣作用之狀態 15 \ 20 I連L於形成有金屬氧化層12之金屬構件u的電極拉出 邛11b ’藉此作為陽極(an〇(je)電極使用。 第2極性導線端子26連結於多個貫通型金屬構件此中 任-個主電極層14。在以第2極性導線端子％作為陰極羯作 用之狀態下，連結於未形成金屬氧化層12之主電極層Μ , 藉此作為陰極(eathGde)電極使用，金屬電容議具極性。 屬構时線料25崎結之電肺出部仙的金 純極、，自作用。當金屬構件11作為陰極羯作 主電極層14係作為陽極箱作用。因此，當第2極性導 =Γ6作為陰極電極使用時，第1極性導線端找則作為 电極使用，而當第2極性導線端子26作為陽極電極使用 15 200919509 時’第1極性導線端子25則作為陰極電極使用。又，當第j 極性導線端子25作為陰極電極使用時，第2極性導線端子％ 則作為陽極電極使用，而當第丨極性導線端子25作為陽極電 極使用時，第2極性導線端子26則作為陰極電極使用。 5 於將作為陽極或陰極使用之第2極性導線端子26連結 至多個貫通型金屬構件中之一個主電極層14時，可於主電 極層14形成導電性接著層16後，將第2極性導線端子％連結 於該導電性結著層16，以改善接著力。 如此，於積層金屬電容器10構成金屬電容器11()、12〇 10時，可得到高電壓、高電容之金屬電容器。又，藉由在構 成金屬電容器1〇之金屬構件n形成兩面，即上/下面貫通之 貫通孔lid，可自動地連結形成於金屬構件丨丨上/下面之主電 極層14,且除法以外’刊㈣式關、機械性 鑽孔或雷射鑽孔固定地形成維持貫通孔lld，而可改善漏茂 15 電流及承受電壓。 產業上利用之可能性 本發明之金屬電容器可使用於電源電路之平滑電路、 噪音過據器或旁路電容器等。 【圖式簡尊說《明】 20第1圖係本發明第1實施例之金屬電容器之立體圖。 第2圖係第1圖所示之金屬電容器之A1-A2線的截面 圖。 第3圖係第1圖所示之金屬電容器之B1-B2線的截面圖。 第4a圖至第4g圖係顯示本發明第i實施例之金屬電容 16 200919509 器之製造步驟的圖式。 第5圖係本發明第2實施例之金屬電容器的截面圖。 第6圖係本發明第3實施例之金屬電容器的截面圖。 【主要元件符號說明】 1…母材 14…主電極層 10,110,120…金屬電容器 15…絕騎 10a…貫通型金屬構件 16...導電性接著層 11…金屬構件 21…第1導線端子 11a...貫通?L形成部 22...第2導線端子 lib...電極拉出部 23...第3導線端子 11c.·.填塞部 24...第4導線端子 lid...貫通孔 25…第1極性導線端子 Π…金屬氧化層 26...第2極性導線端子 13...種子電極層 30.··密封構件 17[Prior Art; J. Background] Conventionally, an aluminuin electrolytic capacitor has been used as a capacitor for smoothing a power supply output from a power supply circuit to a fixed value, 10 or as a low frequency bypass, and the manufacturing method thereof is as follows. First, in order to increase the surface area of the foil to increase the electrostatic capacitance, a step of etching the surface of the a foil is performed. After the end of the button, a chemical conversion (f〇rming) step of forming a dielectric is performed. After the aluminum foil 15 of the cathode and the anode is separately produced by the etching and chemical conversion steps, a slit step of cutting the aluminum foil and the electrolytic paper into a desired size according to the length of the article is carried out. After the cutting is completed, a stitching step of joining the aluminum wire rod as the pull-out terminal to the aluminum foil is carried out. After the cutting of the aluminum foil and the electrolytic paper is completed, a winding step of inserting the electrolytic paper between the anode aluminum foil and the cathode aluminum foil, and then winding it into a cylindrical shape and adhering it with a tape so as not to loosen is carried out. After the winding step is completed, the rolled component is inserted into an aluminum box, and then an impregnation step of injecting the electrolyte is performed. After the completion of the injection of the electrolyte, a curling step of sealing the aluminum case with a sealing material is carried out. After the crimping step is completed, an aging step of repairing the dielectric damage is performed to complete the 200919509 assembly of the electrolytic capacitor. i: SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION 5 10 15 However, when the conventional aluminum electrolytic capacitor thus manufactured is used in a recently developed electronic machine, the following problems occur. Driving Electrolytic Electric Valley has used electrolyte as electrolyte, so the conductivity is low, the resistance of the high frequency region is significantly increased, and the impedance of the capacitor is increased. In addition, when the resistance of the S capacitor is high, the high frequency characteristic is lowered, and the ESR is lowered. (EqmValem Series; Equivalent Stabilization Resistor) becomes a high-powered device, and the problem is reduced. X, since the impedance becomes high, the heat generated by the continuous wave current becomes high, and there is a possibility that smoke, fire, safety, and ring resistance* are suitable. The object of the present invention is as an electrolyte, a conductor as an electrolyte, and a method for producing the same. The solution is to solve the problem, and to provide the base metal material so that the conductivity can be improved compared to the past, so that the electrolyte or the organic half can improve the quality of the metal capacitors ==, _, _ times the metal capacitors The metal material is used for electricization, low loss, reduced chopping heat, long-term safety, no smoking, no fire, and environmental conditions. Means for Solving the Problem In order to achieve the above object, the metal capacitor of the present invention comprises: a metal member's stored with a plurality of through-forms formed by the through-four (4) formed in the front wire (10) ^ 20 200919509 is an oxide layer, is formed The metal member and the insulating layer are formed on the metallization layer and the main electrode layer in a state in which the metal structure/pole pull-out portion and the plurality of through holes are respectively exposed, and are formed by forming a through hole formed in the metal member. The plurality of through holes are formed in a state, and the lead terminals are respectively connected to the electrode extraction portion of the metal member and the main electrode layer. The method for producing a metal capacitor according to the present invention includes the step of forming a through hole forming portion in which a plurality of through holes are formed by forming a through-dc etching square base material, and forming a metal member in which the electrode drawing portion and the filling portion are formed in a body After the metal member body is formed into the through hole forming portion, the electrode drawing portion, and the plug 10 Z, the anode oxidation method forms a metal oxide layer in the metal member, and the electrode is pulled out at the electrode drawing portion of the metal member. In the external state, the step of forming the insulating layer on the main electrode layer and the metal member by the CVD method, and the step of filling the plurality of through holes of the metal oxide layer formed in the through hole forming portion by the plating or electroless plating method Next, the step of forming the main electrode 15 pole layer. Advantageous Effects of Invention The metal capacitor of the present invention can provide a conductivity improvement of 10,000 4,000,000 times by using a metal material as an electrolyte as compared with the use of an electrolyte or an organic semiconductor as an electrolyte in the past, and can be laminated in a straight line. It is compacted and has high electrical safety, which can improve the advantages of miniaturization, low loss, low ESR, low impedance, heat safety, no smoking, no fire, and environmental resistance. C EMBODIMENT 3 BEST MODE FOR CARRYING OUT THE INVENTION 7 200919509 [First Embodiment] A metal capacitor structure according to a first embodiment of the present invention will be described below with reference to the drawings. 1 is a perspective view of a metal capacitor according to a first embodiment of the present invention, and FIG. 25 is a cross-sectional view taken along line A1-A2 of the metal capacitor shown in FIG. 1, and FIG. 3 is a metal capacitor shown in FIG. A cross-sectional view on the B1_B2 line. As shown in the third to third figures, the metal capacitor 1 of the present invention is composed of a metal member u, a metal oxide layer 12, a seed electrode layer 13, a main electrode layer 14, an insulating layer 丨5, a first lead terminal 21, The second lead terminal 22 and the sealing member 30 are configured, and the structure 10 has a non-polarity, but the seed electrode layer 13 is not applicable to the user. Hereinafter, each structure of the metal capacitor 1A of the present invention will be described in order as follows. As shown in FIG. 4b, the metal member u is formed with a through hole forming portion Ua formed by arranging a plurality of through holes lid, and electrode drawing portions lib are formed on both sides of the through hole forming portions ιι and The packing portion 11c. Further, the through hole forming portion 11a, the electrode drawing portion 11b, and the caulking portion lle are integrally formed integrally with each other. The metal member formed by the plurality of through holes 11d is applied to a plurality of metal materials, and any one of aluminum (A1), niobium (Nb), tantalum (Ta), titanium (Ti), and wrong (Zr) is also applicable. The plurality of through holes 11d formed in the through hole forming portion 11a are formed in a circular shape or a polygonal shape. The metal oxide layer 12 is formed on the surface of the metal member 11. That is, as shown in Fig. 1, the metal oxide layer 12 is formed on the entire surface of the metal member 11, and depending on the material of the metal member 11, alumina (ai2o3), bismuth oxide (Nb2〇5), and cerium oxide are used. (NbO), tantalum pentoxide (Ta205), titanium dioxide (Ti〇2) 200919509 and cerium oxide (Zr02). As shown in Fig. 4d, the insulating layer 15 is formed on the metal oxide layer 2 in a state where the electrode drawing portion 11b of the metal member η and the plurality of through holes Ud formed in the through hole forming portion 11a are exposed, respectively. Such an insulating layer 15 may also be formed after forming a plurality of main electrode layers 14. In other words, the insulating layer 15 is formed on the main electrode layer 14 and the metal member 11 in a state where the electrode drawing portion 11b of the metal member is exposed to the outside. More specifically, the insulating layer 15 is formed on the upper/lower portion of the caulking portion llc and the through hole forming portion Ua opposed to the electrode drawing portion 11b in a state where the electrode drawing portion 11b of the metal member u is exposed to the outside. Side and main 10 electrode layer 14. Such an insulating layer 15 is made of a material of a tape or a resin series. The seed electrode layer 13 is formed on the metal oxide layer 12 which has been formed in the through hole forming portion 11a of the metal member u. As shown in Figs. i to 3 and the figure, the seed electrode layer 13 is formed on the metal oxide layer 12 which is formed by the plurality of through holes 11d and which is opened by the through holes 15 Hd. However, the aforementioned seed electrode layer 13 is also not applicable depending on the requirements of the user. The main electrode layer 14 is formed in the state in which the plurality of through holes lid formed in the through hole forming portion 11a of the metal member are formed in the seed electrode layer 13 formed in the through hole forming portion 11a. The main electrode layer 14 is formed on both surfaces of the through hole forming portion 11a, that is, the upper/lower surface, in a state in which the plurality of through holes Ud 20 are filled. The main electrode layer 14 and the seed electrode layer 13 formed on the seed electrode layer 13 are respectively made of aluminum (A1), copper (Cu), zinc (Zn), silver (Ag), nickel (Ni), tin (Sn), indium ( Any of 2009, 509, palladium (Pd), platinum (Pt), cobalt (c), ruthenium (Ru), and gold (Au), as shown in Fig. 3, the first lead terminal 21 is connected to the metal member 11 The electrode lead-out portion lib' and the second lead terminal η are connected to the main electrode layer μ. The conductive layer 8 of the second lead terminal 22 is further connected to the surface of the main electrode layer 14 to improve the adhesion of the second lead terminal 22 connected to the second lead terminal 22 of the main electrode layer I4 by the sealing member 3 The metal member 11 is connected to the first and second lead terminals 2b. The metal member 11 is sealed in a state where the first and second lead terminals 21 and 22 are exposed to the outside, and the sealing member 3 is coated with a molding material or an inner hollow covering member. Further, the sealing member 3 is formed by sealing the metal member u in any shape of a plate or a cylinder, and when sealed in the above cylindrical shape, the 10 metal member 11 is sealed after being wound. A method of manufacturing the metal capacitor 10 of the first embodiment of the present invention having the above-described configuration will be described with reference to the additional drawings. A base material 1 such as a metal film or foil as shown in Fig. 4a is prepared, and as shown in Fig. 4b, a plurality of through-layers of the base material 1 are formed by using a Dc (Direct Current) buttoning method. The through hole forming portion 11a of the hole lid is formed with the metal member 11 in which the electrode drawing portion nb and the caulking portion Uc are integrally formed on one side and the other side. The etching method is performed by using a 1% aqueous solution of phosphoric acid at about 40 to 60 ° C for about 1 to 3 minutes before the treatment step, and mixing sulfuric acid at 7 〇〇 c to 9 (rc) A mixture of phosphoric acid and aluminum is etched once for about 2 to 5 minutes. At this time, the current density is 1 〇〇 to 40 〇 111 八 / (: 1112. Then, it is mixed at about 75 to 85 C. A mixture of nitric acid, squaric acid, aluminum, or the like is etched twice for 5 to 10 minutes. At this time, the current density is 10 to 10 mA/cm 2 . After the end of the foregoing, it is at 6 〇. (: to 70 (: The chemical cleaning is carried out for 30 to 15 minutes in 200919509 with a solution of 30 to 70 g/l of nitric acid. The chemical cleaning may be performed a plurality of times as required by the user. The plurality of chemically formed portions are formed in the through hole forming portion 11a. The through holes 11d are formed in a cylindrical shape or a polygonal shape, and the respective diameters are formed to be 1 μπ1 to 1 μμηη. 5 Further, the through holes lid may be wet or mechanically drilled in addition to the DC etching method. The hole and the laser drill hole are easily formed. As shown in Fig. 4c, the through hole forming portion 11a and the electrode are pulled out After the llb and the caulking portion 11c are integrally formed on the metal member η, a chemical conversion step of forming the metal oxide layer 丨2 in the metal member 11 is performed by an anodizing method. 10 The foregoing anodizing method is first performed at 80. (: ~100. : deionized water is subjected to a boiling step of about 1 to 15 minutes, and is oxidized once in an aqueous solution of boric acid and ammonium borate at a voltage of 丨2 〇 to I50 volt to gradually make the aqueous solution The concentration and the voltage are changed, and the oxidation is performed a plurality of times (2 to 3 times). Then, the heat treatment is performed at a predetermined temperature, for example, 400 to 600 ° C, and the chemical conversion is performed again. Further, the by-product treatment is performed to remove the By-products produced during chemical conversion. Thereafter, re-chemical conversion and heat treatment are repeated again. Then, a predetermined washing step is performed to wipe off boric acid or phosphoric acid. As shown in Fig. 4d, 'using CVD (Chemical Vapor) Deposition 20 chemical vapor deposition method 'in the main electrode layer 14 and the metal member 11 is formed in a state where the electrode drawing portion lib of the metal member 11 is exposed to the outside. The edge layer 15 is formed with a through-type metal member i〇a. The insulating layer 15 is made of an insulating tape or a resin material. For the purpose of CVD, reference may be made to the use of an insulating resin or an insulating ink. (Diping) step, using any of the 11 200919509 inkjet printing (Ink-jet printing) or screen printing (Spray) steps. As shown in Figure 4e, 'If using electroplating or electroless plating The method is infiltrated into the metal oxide layer 12 formed in the through hole forming portion 11a to form the seed electrode layer 513. The seed electrode layer 13 may also be unsuitable depending on the user's requirements, but the seed electrode layer 13 is formed here. In the step of forming the seed electrode layer, the aqueous solution of palladium sulfate as an activator is immersed for 1 〇 to several hundreds of seconds, and then washed at room temperature for 1 second to 30 seconds to remove the surfactant. . The nickel 10-phosphate aqueous solution is used in the nickel-free electroless bond. The pH range (pH 4 to 8) or temperature (50 to 80 ° C) is appropriately adjusted, and electroplating is carried out for 5 to 20 minutes. At this time, the seed electrode layer 13 can be formed only inside the through hole nd. Then, a plating step is performed with a drying step of 1 Å below it. As shown in FIG. 4f, after the plurality of seed electrode layers 形成3 are formed, the main electrode 15 layer 14' is formed by using various electroless plating methods to form the main electrode 15 layer 14' to form a through-hole formed in the metal member 11. The plurality of through holes lid of the hole forming portion 11a. The plating system for forming the main electrode layer 14 has a nickel sulfate or nickel chloride aqueous solution of pH 1 to 5 and a maintenance temperature of 30 to 7 Torr. (:, and applying a DC current having a current density of 20 to 120 mA/cm2, performing electric ore to form the main electrode layer 20 14. Further, the electroless plating for forming the main electrode layer I4 is between 70 and 90 °C The aqueous solution of nickel phosphoric acid is adjusted between pH 5 and 7, and the material on which the seed electrode layer 13 is formed is subjected to electroless plating for 10 to 30 minutes, and the plating solution for removing the surface is washed and l°°C. The following drying is performed to form the main electrode layer 14 〇12 200919509. As shown in Fig. 4g, the electrode drawing portion 11b of the metal member 11 and the main electrode layer !4 are connected to the i-th and second lead terminals 2, respectively. The step of the second lead terminals 21 and 22 may further include a step of forming the conductive adhesive layer 16 on the main electrode layer 14 to which the second lead terminal 22 is connected, so as to improve the fifth and second lead terminals 2 Next, the force and electrical adhesion layer 16 are applied to any one of a method of coating a metal adhesive or a solder paste, a plating method, and an electroless electric forging method. 10 As shown in FIG. 3, the first and second lead terminals are connected. After 22, in the state where W and the second lead terminals 21, 22 are exposed to the outside The metal member 11 is sealed by the sealing member 30. When the metal member is sealed, the hollow or inner hollow covering member is sealed to manufacture the metal capacitor 1〇. [Second Embodiment] The use of the first embodiment of the present invention will be described with reference to the additional drawings. The non-polarity metal capacitor 15 110 of the through-type metal member 1A of the metal capacitor 10 of the embodiment is as follows. As shown in Fig. 5, the metal capacitor i 1 of the second embodiment of the present invention is composed of a plurality of through-types. The metal member 10a, the conductive adhesive layer 16, the third lead terminal 23, the fourth lead terminal 24, and the sealing member 3_ are formed to have a non-polarity, and each structure is described as follows. 20 Township through-type metal member 1 The crucible 3 is composed of the metal member 11, the metal oxide layer 12, the seed electrode layer 13, the main electrode layer 14, and the insulating layer 15, and since each structure is identical to the through-type metal member of the fourth drawing, the detailed description is omitted. The plurality of through-type metal members having the above-described structure are alternately laminated in a state in which the electrode drawing portion lib faces the side-side and the other-side direction. 13 200919509 Conductive twinning layers are respectively set in The through-type metal members 1 〇a = between the main electrode layers 14, and the plurality of through-type metal members IGa are alternately connected to the electrodes which are connected to the plurality of through-type metal members i〇a from the first line 23 The electrode lead-out portion 5 Ub of the through-type metal member 10a facing the side of the portion 11b, that is, as shown in Fig. 5, the third lead terminal 23 is connected to a plurality of through-type metals respectively formed on the left side The electrode lead-out portion of the member of the through-type metal member i〇a is connected to the electrode pull-out portion lib of the through-type metal member 1a of the other through-type metal member i〇a. , forming a non-polar metal capacitor u〇. That is, as shown in Fig. 5, the fourth lead terminal 24 is connected to the right side? The electrode drawing portion 11b of the through-type metal member 10a. The electrode lead-out portion 11b of the through-type metal member 10a formed of the metal oxide layer 12 having the same polarity is connected to the third lead terminal 23 and the fourth lead terminal 24, whereby the metal capacitor 11〇 has no polarity. 15 In a state in which the third and fourth lead terminals 23 and 24 are exposed to the outside, the sealing member 30 seals the plurality of through-type metal members 1 〇 a connected to the third and fourth lead terminals 23 and 24 to protect the external laminated layer. A plurality of through-type metal members 1 〇 a. [Third Embodiment] A metal capacitor 12 having a polarity of a through-type metal member 10a constituting the metal 20 capacitor 10 of the first embodiment of the present invention will be described with reference to the accompanying drawings. As shown in Fig. 6, the metal capacitor 120 having polarity according to the third embodiment of the present invention is composed of a plurality of through-type metal members 10a, a conductive adhesive layer 16, a fifth polarity lead terminal 25, and a second polarity lead terminal. 26, and the sealing member 3 14 14 200919509 成, in order to explain the structure as follows. As shown in Fig. 5, the plurality of through-type metal members 1a are composed of the metal member 11, the metal oxide layer 12, the seed electrode layer 13, the main electrode layer 14, and the insulating layer 15, respectively, and each structure and the fourth layer The five-piece metal fitting 10a shown in the figure is the same, and detailed description thereof will be omitted. The plurality of through-type metal members 1a are laminated in a state in which the electrode drawing portions 11b are oriented in the same direction. That is, as shown in Fig. 6, the electrode drawing portion 11b is provided only on the left side. The conductive adhesive layers 16 are respectively provided between the main electrode layers 14 of the plurality of through-type metal members 1a, and the plurality of through-type metal members 10a are alternately connected. The first polarity lead terminal 25 is connected to the electrode drawing portion claw of the through-type metal member 1Ga of the plurality of through-type metal members 1a facing the electrode drawing portion Ub. In the state in which the second polarity wire terminal 25 acts as a positive (four) state, the electrode 11 of the metal member u in which the metal oxide layer 12 is formed is pulled out, and the anode 11b is used as an anode (an electrode). The second polarity lead terminal 26 is connected to any one of the plurality of through-type metal members, and is connected to the metal oxide layer 12 without being in a state in which the second polarity lead terminal % acts as a cathode. The main electrode layer Μ is used as a cathode (eathGde) electrode, and the metal capacitor has a polarity. The genus is a pure gold electrode of the electric lungs of the genus 25, and self-acting. When the metal member 11 serves as a cathode The primary electrode layer 14 functions as an anode case. Therefore, when the second polarity conduction = Γ6 is used as the cathode electrode, the first polarity wire end is used as an electrode, and the second polarity wire terminal 26 is used as an anode electrode. When 15 200919509 is used, 'the first polarity wire terminal 25 is used as the cathode electrode. Further, when the j-th polarity wire terminal 25 is used as the cathode electrode, the second polarity wire terminal % is used as the anode electrode, and the third polarity wire is used as the anode electrode. When the terminal 25 is used as an anode electrode, the second polarity lead terminal 26 is used as a cathode electrode. 5 When the second polarity lead terminal 26 used as an anode or a cathode is connected to one of the plurality of through-type metal members After the conductive adhesive layer 16 is formed on the main electrode layer 14, the second polarity lead terminal % can be connected to the conductive build-up layer 16 to improve the adhesion force. Thus, the metal capacitor 11 is formed in the build-up metal capacitor 10 () At 12 〇10, a high-voltage, high-capacitance metal capacitor can be obtained. Further, the metal member n constituting the metal capacitor 1 形成 can be formed on both sides, that is, through-holes pen that penetrates the upper/lower sides, and can be automatically connected to each other. The main electrode layer 14 of the upper/lower surface of the metal member is formed, and the through hole ll is fixedly formed by the "fourth" type, mechanical drilling or laser drilling, and the current and the withstand voltage of the leakage 15 can be improved. Industrial Applicability The metal capacitor of the present invention can be used for a smoothing circuit, a noise passer or a bypass capacitor of a power supply circuit, etc. [Fig. Jane said "Ming" 20th 1st A perspective view of a metal capacitor according to a first embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line A1-A2 of the metal capacitor shown in Fig. 1. Fig. 3 is a B1-B2 line of the metal capacitor shown in Fig. 1. Fig. 4a to Fig. 4g are diagrams showing the manufacturing steps of the metal capacitor 16 200919509 of the first embodiment of the present invention. Fig. 5 is a cross-sectional view showing the metal capacitor of the second embodiment of the present invention. 6 is a cross-sectional view of a metal capacitor according to a third embodiment of the present invention. [Explanation of main component symbols] 1...base material 14...main electrode layer 10,110,120...metal capacitor 15...pass 10a...through metal member 16...conductive The adhesive layer 11...the metal member 21...the first lead terminal 11a...through the L-forming portion 22...the second lead terminal lib...the electrode pull-out portion 23...the third lead terminal 11c.. Pad portion 24...fourth lead terminal lid...through hole 25...first polarity lead terminal Π...metal oxide layer 26...second polarity lead terminal 13...seed electrode layer 30.·· Sealing member 17