TW200913248A - Array type light-emitting device with high color rendering index - Google Patents

Array type light-emitting device with high color rendering index Download PDF

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TW200913248A
TW200913248A TW096132752A TW96132752A TW200913248A TW 200913248 A TW200913248 A TW 200913248A TW 096132752 A TW096132752 A TW 096132752A TW 96132752 A TW96132752 A TW 96132752A TW 200913248 A TW200913248 A TW 200913248A
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light
emitting
array type
color rendering
illuminating
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TW096132752A
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TWI331397B (en
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Zhi-Liang Su
Xin-Jun Liu
Fang-Po Wang
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Ledtech Electronics Corp
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Priority to JP2007291095A priority patent/JP2009060069A/en
Priority to DE102007058703A priority patent/DE102007058703B4/en
Publication of TW200913248A publication Critical patent/TW200913248A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

An array type light-emitting device with high color rendering index includes a substrate, an array type light-emitting module electrically disposed on the substrate, a plurality of wavelength-converting layers, and a plurality of transparent layers. The array type light-emitting module is composed of a plurality of light-emitting rows. Each light-emitting row has a plurality of first light-emitting chips and at least one second light-emitting chip. The wavelength-converting layers are covered on the first light-emitting chips, respectively. A part of visible lights emitted by the first light-emitting chips is absorbed and converted into visible lights with another peak wavelength range via the wavelength-converting layers. The visible lights with another peak wavelength range are mixed with projected lights emitted by the second light-emitting chips to make the array type light-emitting device generate white lights with color rendering index of between 90 to 95.

Description

200913248 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種發光裝置，尤指一種具有高演色性 (color rendering index )之陣列式發光裝置（array type light-emitting device)。 【先前技術】 發光二極體（Light-Emitting Diode，LED)係為一半導體 裝置，雖然其尺寸都很小，但是其優點在於可以高效率地產生 一明亮的彩色發射源，並且由發光二極體所產生的發射光源具 有一最佳單色峰波。如果想要藉由擴散及合併複數個發光二極 體的發射來產生白光的話，則需要一彩色混合方法。 例如：三個各自產生一發射光源，其波長分別在紅、綠或 藍色的可見光譜範圍内（其分別為紅色發光二極體、綠色發光 二極體、及藍色發光二極體）的發光二極體必須彼此靠近地放 在一起。然而，每一個發光二極體各具有一最佳單色波峰，所 以由這些彩色混合所產生的白光常常不均勻。亦即，由於三原 色的發射光源混合後所產生的白光會不均勻，所以三原色的發 射光源不能以隨意的方式合併在一起。 換言之’高演色性（color rendering index，C R I )的白 光’一直是半導體發光源所追求的目標。如上述傳統上有採用 多種波長的發光二極體晶片，例如紅、藍、綠三色晶片配置而 成之發光源，但此種發光源只能達到演色性8 〇左右，並且羽 知具有混光不均勻的問題。 白 6 200913248 置，在實際使用 是以，由上可知，上述習知之白光發光裝 上，顯然具有不便與缺失存在。 义 緣是’本發明人有感上述缺失之可改善，且依據多年來從 事此方面之相關經驗，悉心觀察且研究之，並配合學理之運 用，而提出-種設計合理且有效改善上述缺失之本口發明。 【發明内容】 , 本發明用以解決問題的技術手段，在於提供一種具有高演 色性（color rendering index)之陣列式發光裝置（army汐二 light-emktmg devlce )。本發明之陣列式發光裝置係由複數排發 光元件列（light-emitting row)所組成，其中每一排發光元件 列係具有複數個藍色發光二極體晶片（blueLEDchip)及至少 一紅色發光二發光晶片（red LED chip)。 此外，每一個藍色發光二極體晶片上係覆蓋一層波長轉換 層，以轉換該等藍色發光二極體晶片所發射出來的波長，並且 母一個紅色發光一發光晶片上係覆蓋一層透光層。藉由該等因 ‘ 波長轉換層而改變其發射波長之藍色發光二極體晶片及該等 紅色發光二發光晶片的混光作用，以產生高演色性（c〇i〇r rendering index)之陣列式發光裝置（array type light-emitting device) ° 其中，該等波長轉換層中之其中一層係為橙色螢光粉 (orange phosphor powder)與封裝膠體（package colloid)之 混合，其用於使得其中一藍色發光二極體晶片產生發光峰值波 長範圍介於595〜610 nm之間之投射光源。 200913248 其中’該等波長轉換層中之一部分係為綠色螢光粉（green phosphor powder)與封裝膠體（package c〇n〇id)之混合，其 用於使得部分相對應之藍色發光二極體晶片產生發光峰值波 長範圍介於「480〜495 nm之間」或「520〜540 nm之間」之 投射光源。 其中’該等波長轉換層中之一部分係為黃色螢光粉 (yellow phosphor powder)與封裝膠體（package colloid)之 混合，其用於使得部分相對應之藍色發光二極體晶片產生色溫 介於7000〜11，000 K之間之投射光源。此外，上述黃色螢光 粉可替換成橙色及綠色混合之營光粉（orange and green phosphor powder) ’並且該橙色及綠色混合之螢光粉與封裝膠 體（package colloid)之混合係用於使得另一部分相對應之第 一發光晶片產生具有預定色溫（c〇l〇r temperature)之投射光 源。 其中’ §亥專苐一發光晶片係彼此交替地（alternatively) 分別設置在不同排的發光元件列上。 根據上述，本發明之其中一種方案，提供一種具有高演色 性（color rendering index )之陣列式發光裝置 (array type light-emittmg device)，其包括：一基板（substrate)、一陣列 式％ 光模組（array type light-emitting module)、複數層波長轉 換層（wavelength-converting layer )、及複數個透光層 (transparent layer) ° 其中，該陣列式發光模組係電性連接地設置於該基板上， 並且該陣列式發光模組係由複數排發光元件列〇ight_emitting 200913248 row)所組成’其中母一排發光元件列（Hght-emitting row)係 具有複數個發光波長（emission wavelength)範圍介於450 〜460 nm之間之苐一發光晶片（行加iight_emi出ng chip)及至 少一發光波長範圍係介於ό2〇〜640 nm之間之第二發光晶片 (second light-emitting chip ) ° 再者，該等波長轉換層之其中一部分為綠色螢光粉(；green phosphor powder)與封裝膠體（package c〇u〇id)之混合，其 用於使得一部分相對應之第一發光晶片產生發光峰值波長範 圍介於520〜540 nm之間之投射光源，並且該等波長轉換層之 另一部分為橙色及綠色混合之螢光粉（orange and green phosphor powder)與封裝膠體（package c〇u〇id)之混合，其 用於使得另一部分相對應之第一發光晶片產生具有預定色溫 (color temperature)之投射光源。 藉此，該等第一發光晶片所發出之可見光的一部份係透過 該等波長轉換層吸收並轉換為具有另一發光峰值波長範圍之 可見光’並且該具有另一發光峰值波長範圍之可見光與該等第 一發光晶片所產生之投射光源相混合，以使得該陣列式發光模 組混合出演色性（color rendering index)介於9〇〜95之間之 白色光源。 因此，本發明的特點在於.母一排發光元件列係具有複數 個藍色發光二極體晶片（blue LED chip)及至少—紅/色發光二 發光晶片（redLED chip)。並且，該等波長轉換層之其中一部 分為綠色螢光粉（green phosphor powder)與封裝膠體（ colloid)之混合，其用於使得一部分相對應之第一發光晶片產 9 200913248 生發光峰值波長範圍介於520〜540 nm之間之投射光源，並且 該等波長轉換層之另一部分為橙色及綠色混合之螢光粉 (orange and green phosphor powder)與封裝膠體（package colloid)之混合（或是黃色營光粉（yeii〇w phosphor powder) 與封裝膠體（package,colloid)之混合），其用於使得另一部分 相對應之第一發光晶片產生具有預定色溫（c〇l〇r temperature ) 之投射光源。此外，該等第二發光晶片係彼此交替地 (alternatively )分別設置在不同排的發光元件列上。藉此以 使仔该陣列式發光模組混合出演色性（c〇l〇r rendering index) 介於90〜95之間之白色光源。 再者’每一排發光元件列係彼此並聯地（parallelly)電性 連接於一基板上，並且每一排發光元件列之該等藍色發光二極 月立曰曰片及s亥紅色發光一極體晶片係彼此串聯地（seriesiy)電 性連接於該基板上。並且，該藍色發光二極體晶片的電壓值範 圍係介於2.9〜4.0伏特（V)之間，該紅色發光二極體晶片的 電壓值範圍係介於1.8〜2.8伏特（V)之間。因此，電路設計 者可隨意搭配不同電壓值之藍色發光二極體晶片及紅色發光 二極體晶片，以使得每一排發光元件列之該等藍色發光二極體 b曰片及s亥紅色發光一極體晶片彼此串聯後的總電壓值約為12 伏特左右。然而，最佳的情況下，每一排發光元件列 (light-emitting row)的總電壓值係為12伏特。 為了能更進一步暸解本發明為達成預定目的所採取之 技術、手段及功效，請參閱以下有關本發明之詳細說明與附 圖，相信本發明之目的、特徵與特點，當可由此得一深入且 10 200913248 具體之瞭解，然而所附圖式僅提供參考與說明用，並非用來 對本發明加以限制者。 【實施方式】 請參閱第一圖及第二圖所示’其分別為本發明第一種具有 高演色性（color rendering index)之陣列式發光裝置（array type light-emitting device)之上視圖、及本發明第一圖之2 — 2剖 視圖。由上述圖中可知’本發明係提供一種具有高演色性 (color rendering index )之陣列式發光裝置（array type light-emitting device)，其包括：一基板（substrate) 1、一陣 列式發光模組（array type light-emitting module) 2、複數層 波長轉換層（wavelength-converting layer) 3、及複數個透光 層（transparent layer) 4。 此外，該陣列式發光模組2係電性連接地設置於該基板1 上，並且該陣列式發光模組2係由複數排發光元件列 (light-emitting row) (21、22、23、24)所組成。 其中，每一排發光元件列（light-emitting row )係具有複數個 發光波長（emission wavelength)範圍介於450〜460 nm之間 之第一發光晶片（first light-emitting chip )及至少一發光波長 範圍係介於620〜640 nm之間之第二發光晶片（second light-emitting chip)。 如第一圖所示，第一排的發光元件列2 1係具有三個第一 發光晶片2 1 0及一個第二發光晶片2 1 1。第二排的發光元 件列2 2係具有三個第一發光晶片2 2 0及一個第二發光晶 11 200913248 2 3 0及-個的發光兀件列2 3係具有三個第—發光晶片 係豆有片23 P第四排的發^件列2 4 …其;；:！光㈣4 〇及-個第二發光晶片2 4 !。 發光二極體晶請二=等 一毛九曰曰片（2 1 1、2 2 1、2 3 1、2 4 1 )名 ^ ^ , (red LED chip) 〇 ,b,h , M ,a'；； 2 /V α,I -λ m ^ 2 3 1 2 4 1 )係彼此父替地（alternativei ) 刀別故置在不同排的發光元件列（21、MU2 m卜寺第一發光晶片（2i0、220、230、3 4 CO及该專第二發光晶片（2丄丄、2 2丄、2 3丄、2 4 1)係彼此分離一預定距離。 ，，，該等波長轉換層3係分別覆蓋在該等第—發光晶片 2+20、230'340)上。此外，該等透光層 4係为別覆蓋在該等第二發光晶片（211、2 2 41)上。 其中，該等波長轉換層3中之其中一層係為橙色螢光粉 曰(orange phosphor powder)與封裝膠體（packagec〇11〇id)之 此5 3 0，其用於使得其中一第一發光晶片（例如第四排發光 兀，列2 4中的第三個第—發光晶片2 4 Q)產生發光峰值波 長範圍介於595〜610 nm之間之投射光源。 其中’該等波長轉換層3中之一部分係為綠色螢光粉 (green phosphorp0W(}er)與封裝膠體（packagec〇I1〇⑷之混 合3 G，其用於使得一部分相對應之第一發光晶片（例如第一 12 200913248 排發光元件列2 1中的第四個第一發光晶片2工〇及第二排 發光元件列2 2中的第二個第—發光晶片2 2 〇產生發光峰 • 值波長範圍介於「48〇〜495 nm之間」或r52〇〜54〇 nm之間」 之投射光源。 其中’該等波長轉換層3中t一部分係為黃色榮光粉 (ydlow phosphor powder)與封裝膠體（packagec〇11〇id)之 此合3 Y ’其用於使得部分相對應之第一發光晶片（例如第一 f 排發光兀件列21中的第一個第一發光晶片21〇及第二排 發光兀件列2 2中的第一個第—發光晶片2 2 〇 )產生色溫介 於2800〜7,000 Κ之間」或ryooo—n’QooK之間」之投射 =源。此外，上述黃色螢光粉可替換成橙色及綠色混合之螢光 .叔（〇range and §reen Ph〇sph〇r powder )，並且該橙色及綠色混 •合之螢光粉與封裝#體（package c〇u〇id)之混合係用於使得 另刀々目對應之第一發光晶片產生具有預定色溫（col〇r temperature)之投射光源。 藉此，該等第一發光晶片（210、220、230、2 4 0 )所發出之可見光的一部份係透過該等波長轉換層3吸收 =換為具有另—發光峰值波絲圍之可見光，並且該具有另 發光蜂值波長範圍之可見光與該等第二發光晶片（2丄丄、 231'241)所產生之投射光源相混合，以使得 車J式♦光模組2混合出演色性（c〇i〇r ren(jering incjex )介 於90〜95之間之白色光源。 然而，上述該等第一發光晶片（210、220、230、 24 0)及該等第二發光晶片（2 1、23 1、2 13 200913248 4 1 )的排列方式係非用以限定本發明。舉凡每一排發先元件 列（light-emitting row) (21、22、23、24)係具有 至少一第二發光晶片（211、221、231、241)， 並且該等波長轉換層3係以不同比例之螢光粉（phosph〇r pomier)與封裝膠體（package c〇11〇id)所混合而成’以分別 覆蓋在該等第一發光晶片（21〇、220、230、240) 上者’皆為本發明所保護之範圍。 β >閱第二圖所示，其係為本發明第一種具有高演色性 (color rendering mdex )之陣列式發光裝置（army汐恥 light-emitting device)之電路圖。配合第一圖及第三圖所示， 該陣列式發光模組2係由四排發光元件列（light_emitting _) κ :丨2 1、2 2、2 3、2 4 )所組成’每-排發光元件列 pght-emlttmg窗）係具有三個第—發光晶片及—個第二發 先晶片，以組合成4X4的陣列式發光模組。再者，苴 =元件列（21、22、23'24)係彼此::地 para eIly)電性連接於該基板上，並且每一排發光元件列（2 片係被、2 4)之該等第—發光晶片及該第二發光晶 '、彼此串?地^㈣州電性連接於該基板上。 伏把母—個第—發光晶片的電壓值範圍係介於2·9〜4·0 2,/伏’該第二發光晶片的電1值範圍係介於U〜 值之第1發光)曰m’、電路設計者可隨意搭配不同電壓 (2 ] “曰曰弟一鲞光晶片’以使得每-排發光元件列 光曰曰23、24)之該等第一發光晶片及該第二發 破此串聯後的總電壓值約為12伏特左右。然而，最佳 14 200913248 的情況下，每一排發光元件列（light-emitting row )的總電壓 值係為12伏特。 請參閱第四a圖所示，其為本發明第一種具有高演色性 (color rendering index )之陣列式發光裝置（array type light-emitting device)的第一實施例之發光晶片配置示意圖。 第四a圖的第一實施例之說明如下所述： B + P ( 0 G )係為「透過一藍色發光二極體晶片（blue LED chip) B配合橙色及綠色混合之螢光粉（orange and green phosphor powder)與封裝膠體（package colloid )之混合 P (〇 G)’ 以產生色溫（color temperature)介於 2800 〜7000 K 之 間的白色投射光源」； B + P ( G )係為「透過一藍色發光二極體晶片（bh^ LED chip) B配合細色螢光粉（green phosphor powder)與封裝膠 體（package colloid)之混合p (G)，以產生發光峰值波長範 圍介於520〜540 nm的綠色投射光源」； B + P ( 0 )係為「透過一藍色發光二極體晶片（blueLED chip) B配合橙色金光粉（orange phosphor p0Wder)與封裝膠 體（packagecoUoid)之混合p (〇），以產生發光峰值波長範 圍為595〜610 nm的橙色投射光源」；以及 R + T係為「透過一紅色發光二極體晶片（red]LED chip) R配合透光層T，以產生發光波長範圍為㈣〜64〇腿的紅色 投射光源」。 因此，該等藍色發光二極體晶片（blue LED chip) B之可 見光的一部份係透過不同波長轉換層（P(QG)、P(G)、 15 200913248 p (〇））吸收並轉換為具有另一發光峰值波長範圍之可見光， 並且該具有另一發光峰值波長範圍之可見光與該等紅色發光 二極體晶片R所產生之投射光源相混合，以使得本發明第一種 陣列式發光模組之第一實施例能混合出色溫介於2500〜 4000K之間之高演色性（color rendering index )之白色光源。 請參閱弟四b圖所示’其為本發明第一種具有高演色性 (color rendering index )之陣列式發光裝置（array type light-emitting device)的第二實施例之發光晶片配置示意圖。 第四b圖的第二實施例之說明如下所述： B + P (〇G )係為「透過一藍色發光二極體晶片（blue LED chip) B配合撥色及綠色混合之螢光粉（orange and green phosphor powder)與封裝膠體（package colloid )之混合 P (〇 G)’ 以產生色溫（color temperature)介於 2800 〜7000 K 之 間的白色投射光源」； B + P ( G )係為「透過一藍色發光二極體晶片（blue LED chip) B配合綠色營光粉（green phosphor powder)與封裝膠 體（package colloid)之混合P ( G ) ’以產生發光峰值波長範 圍介於520〜540 nm的綠色投射光源」； .B + P ( g )係為「透過一藍色發光二極體晶片（blue LED chip) B配合綠色螢光粉（green phosphor powder)與封裝膠 體（package colloid)之混合P ( g ) ’以產生發光峰值波長範 圍介於480〜495 nm的綠色投射光源」； B + P (〇）係為「透過一藍色發光二極體晶片（blue LED chip) B配合燈色螢光粉（orange phosphor powder)與封裝膠 16 200913248 體（packagecollold)之混合p (〇)，以產生發光峰值波長範 圍為595〜610 mn的橙色投射光源」；以及 R + T係為「透過—紅色發光二極體晶片（redLEDchip) R配合透光層T，以產生發光波長範圍為㈣〜64Qnm的紅色 投射光源」。 因此，该等監色發光二極體晶片（bhieLEDchip) B之可 見光的一部伤係透過不同波長轉換層（p (〇G )' p ( g)、 r p (g )、p (〇））吸收並轉換為具有另一發光峰值波長範圍 之可見光’並且該具有另一發光峰值波長範圍之可見光與該等 紅色發光二極體晶片R所產生之投射光源相混合，以使得本發 明第一種陣列式發光模組之第二實施例能混合出色溫介於 4000〜6000K之間之尚貝色性（c〇i〇r rendering index)之白色 光源。 請參閱第四c圖所示，其為本發明第一種具有高演色性 (color rendering index )之陣列式發光裝置（array type light-emitting device)的第三實施例之發光晶片配置示意圖。 v 弟四C圖的弟二貫施例之說明如下所述： B + P (〇G )係為「透過一藍色發光二極體晶片（blue LED chip) B配合橙色及綠色混合之螢光粉（yellow phosphor powder)與封裝膠體（package colloid )之混合P (〇G )，以 產生色溫（color temperature)介於7000〜11,000 K之間的白 色投射光源」； B + P ( G )係為「透過一藍色發光二極體晶片（blue LED chip) B配合綠色螢光粉（green phosphor powder)與封裝膠 17 200913248 體（package colloid)之混合p ( G )，以產生發光峰值波長範 圍介於520〜540 nm的綠色投射光源」； B + P ( g )係為「透過一藍色發光二極體晶片（blueLED chip) B配合綠色榮光粉（green phosphor powder)與封裝勝 體（package colloid)之混合p ( g )，以產生發光峰值波長範 圍介於480〜495 nm的綠色投射光源」； B + P (〇）係為「透過一藍色發光二極體晶片（blue；LED chip) B配合橙色螢光粉（〇range phosphor powder)與封裝朦 體（packagecolloid)之混合p (〇），以產生發光峰值波長範 圍為595〜610 nm的橙色投射光源」；以及 R + T係為「透過一紅色發光二極體晶片（red]LEDchip) R配合透光層T，以產生發光波長範圍為62〇〜64〇nm的紅色 投射光源」。 因此，該等藍色發光二極體晶片（bhieLEDchip) B之可 見光的一部份係透過不同波長轉換層（p (〇G)、p (G)、 P (g)、P (〇））吸收並轉換為具有另一發光峰值波長範圍 之可見光’並且δ玄具有另一發光峰值波長範圍之可見光與該等 紅色發光二極體晶片R所產生之投射光源相混合，以使得本發 明第一種陣列式發光模組之第三實施例能混合出色溫介於 6000〜9000Κ之間之高演色性（c〇i〇rrenderingindex)之白色 光源。 請參閱第五圖及第六圖所示，其分別為本發明第二種具有 高演色性（color rendering index)之陣列式發光裝置（array type light-emitting device)之上視圖、及本發明第五圖之6 — 6剖 18 200913248 視圖。由上述圖中可知，本發明第二種陣列式發光裝置與第一 種陣列式發光裝置最大的差界在於：第二種陣列式發光裝置之 一基板1 '具有複數個彼此緊密排列之容置槽（receiving space) 1 〇 >，並且一陣列式發光模組2 '之複數排發光元 件列（light-emitting row ) (21 、22>、23'、24') 的該等第一發光晶片（210、220、230、240)及 該等第二發光晶片（21 1、2 2 1、2 3 1、2 41)係分 別容置於該等相對應之容置槽10/内。 請參閱第七a圖及第七A圖所示，其分別為本發明第二種 具有高演色性（color rendering index)之陣列式發光裝置（array type light-emitting device )的第一實施例之發光晶片配置示意 圖及光譜圖（spectrogram)。第七a圖的第一實施例之說明如 下所述： B + P (〇G)係為「透過一藍色發光二極體晶片（blue LED chip) B配合橙色及綠色混合之螢光粉（orange and green phosphor powder)與封裝膠體（package colloid)之混合 P ( 〇 G )，以產生色溫（color temperature)介於 2800 〜7000 K 之 間的白色投射光源」； B + P ( G )係為「透過一藍色發光二極體晶片（blue LED chip) B配合綠色螢光粉（green phosphor powder)與封裝膠 體（package colloid)之混合P ( G ) ’以產生發光峰值波長範 圍介於520〜540 nm的綠色投射光源」； B + P ( 0 )係為「透過一藍色發光二極體晶片（blueIJED chip) B配合燈色螢光粉（orange phosphor powder)與封裝膠 19 200913248 體（package colloid)之混合 p 广 n、 ,1n ^又犯口 P (〇），以產生發光峰值波長範 圍為595〜⑽nm的撥色投射光源」；以及 2 :係為「透過-紅色發光二極體晶片（red LED chip) R配合透光層Τ’以產生發光波長範圍為㈣〜_ 投射光源」。 & 因此’該等藍色發光二極體晶片（—咖娜）β之可 見光的-部份係透過不同波長轉換層（p(〇G)、p(G)、 P (〇））吸收並轉換為具有另—發光峰值波長範圍之可見光， 並且該具有另-發光峰值波長範圍之可見光與該等紅色發光 二極體晶片R所產生之投射光源相混合，以使得本發明第一實 把例之陣列式發光模組能混合出（如第七A圖所示）演色性 (CRI)為93.16，色溫為2500〜4000 K之高演色性（c〇i〇r rendering index)白色光源。 請參閱第七b圖及第七B圖所示，其分別為本發明第二種 具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)的第二實施例之發光晶片配置示意 圖及光譜圖（spectrogram)。第七b圖的第二實施例之說明如 下所述： B + P ( 0 G )係為「透過一藍色發光二極體晶片（blue LED chip) B配合橙色及綠色混合之螢光粉（orange and green phosphor powder)與封裝膠體（package colloid )之混合 P (〇 G )，以產生色溫（color temperature)介於 2800〜7000 K 之 間的白色投射光源」； 20 200913248 B + P ( G )係為「透過一藍色發光二極體晶片（blueLED chip) B配合綠色螢光粉（greenph〇sph〇rp〇wder)與封裝膠 體（package colloid)之混合P ( 〇 )，以產生發光峰值波長範 圍介於520〜540 nm的綠色投射光源」；以及 R + T係為「透過一紅色發光二極體晶片（red]LED chip) R配合透光層T，以產生發光波長範圍為62〇〜64〇nm的紅色 投射光源」。 因此，該等藍色發光二極體晶片（blueLEDchip) B之可 見光的一部份係透過不同波長轉換層（p (〇G)、p (G)) 吸收並轉換為具有另一發光峰值波長範圍之可見光，並且該具 有另一發光峰值波長範圍之可見光與該等紅色發光二極體晶 片R所產生之投射光源相混合，以使得本發明第二實施例之陣 列式發光模組能混合出（如第七B圖所示）演色性（CRI)為 90.46 ’ 色>皿為 4000〜6000 K 之局演色性（CQi〇r rendering index)白色光源。 清參閱弟七c圖及第七C圖所示’其分別為本發明第二種 具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device )的第三實施例之發光晶片配置示意 圖及光譜圖（spectrogram)。第七c圖的第三實施例之說明如 下所述：BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting device, and more particularly to an array type light-emitting device having a high color rendering index. [Prior Art] A Light-Emitting Diode (LED) is a semiconductor device. Although its size is small, it is advantageous in that it can efficiently produce a bright color emission source and is illuminated by a diode. The emission source produced by the body has an optimal monochromatic peak wave. If it is desired to generate white light by diffusing and combining the emission of a plurality of light emitting diodes, a color mixing method is required. For example, each of the three generates an emission source whose wavelength is in the visible spectrum of red, green or blue (the red LED, the green LED, and the blue LED, respectively). The light-emitting diodes must be placed close together. However, each of the light-emitting diodes has an optimum monochromatic peak, so that the white light generated by these color mixing is often uneven. That is, since the white light generated by the mixing of the three primary color light sources is uneven, the three primary color light sources cannot be combined in a random manner. In other words, 'white light' of color rendering index (C R I) has been the goal pursued by semiconductor light sources. As described above, there are conventional light-emitting diode chips using a plurality of wavelengths, such as red, blue, and green three-color wafers, but such a light source can only achieve color rendering of about 8 ,, and the feathers are mixed. The problem of uneven light. White 6 200913248 Set, in actual use, it can be seen from the above that the above-mentioned conventional white light illumination is obviously inconvenient and missing. The righteousness is 'the inventor feels that the above-mentioned deficiency can be improved, and based on years of experience in this field, carefully observed and studied, and with the use of academic theory, it is proposed that the design is reasonable and effectively improves the above-mentioned deficiency. This mouth invention. SUMMARY OF THE INVENTION The technical means for solving the problem of the present invention is to provide an array type light-emitting device (army 汐 two light-emktmg devlce) having high color rendering index. The array type light-emitting device of the present invention is composed of a plurality of light-emitting rows, wherein each row of light-emitting elements has a plurality of blue LED chips and at least one red light-emitting diode. A red LED chip. In addition, each blue light-emitting diode wafer is covered with a wavelength conversion layer to convert the wavelength emitted by the blue light-emitting diode wafers, and a red light-emitting light-emitting substrate is covered with a light-transmitting layer. Floor. Producing high color rendering (c〇i〇r rendering index) by the blue light emitting diode chip whose emission wavelength is changed by the 'wavelength conversion layer and the light combining effect of the red light emitting two light emitting chips Array type light-emitting device ° wherein one of the wavelength conversion layers is a mixture of an orange phosphor powder and a package colloid, which is used to make A blue light-emitting diode wafer produces a projected light source having an emission peak wavelength ranging from 595 to 610 nm. 200913248 wherein 'one of the wavelength conversion layers is a mixture of a green phosphor powder and a package c〇n〇id, which is used to make a portion of the corresponding blue light emitting diode The wafer produces a projection source having an emission peak wavelength ranging from "480 to 495 nm" or "520 to 540 nm". Wherein one of the wavelength conversion layers is a mixture of a yellow phosphor powder and a package colloid, which is used to cause a color temperature of a portion of the corresponding blue light-emitting diode wafer to be between Projection light source between 7000 and 11,000 K. In addition, the above yellow phosphor powder may be replaced by an orange and green phosphor powder ' and the mixture of the orange and green mixed phosphor powder and the package colloid is used to make another A portion of the corresponding first luminescent wafer produces a projected light source having a predetermined color temperature (c〇l〇r temperature). Wherein, the illuminating wafers are alternately arranged on the rows of light-emitting elements of different rows. According to one aspect of the present invention, an array type light-emittmg device having a high color rendering index includes: a substrate, an array type % optical mode An array type light-emitting module, a plurality of wavelength-converting layers, and a plurality of transparent layers, wherein the array type light-emitting module is electrically connected to the substrate The array light-emitting module is composed of a plurality of rows of light-emitting elements, 〇ight_emitting 200913248 row), wherein the mother-side row of light-emitting rows has a plurality of emission wavelengths ranging from A light-emitting chip between 450 and 460 nm (a iight_emi output ng chip) and at least a second light-emitting chip having an emission wavelength range between ό2〇 and 640 nm ° a part of the wavelength conversion layer is a mixture of a green phosphor powder and a package c〇u〇id. So that a portion of the corresponding first luminescent wafer generates a projection light source having an emission peak wavelength ranging from 520 to 540 nm, and another portion of the wavelength conversion layer is an orange and green mixed phosphor (orange and green phosphor) A mixture of a powder and a package for causing another portion of the corresponding first light-emitting wafer to produce a projection light source having a predetermined color temperature. Thereby, a portion of the visible light emitted by the first luminescent wafer is absorbed by the wavelength conversion layer and converted into visible light having another luminescence peak wavelength range and the visible light having another luminescence peak wavelength range The projection light sources generated by the first illuminating wafers are mixed such that the array illuminating module mixes a white light source having a color rendering index between 9 〇 and 95 Å. Accordingly, the present invention is characterized in that the mother row of light-emitting elements has a plurality of blue LED chips and at least a red LED chip. Moreover, a part of the wavelength conversion layers is a mixture of a green phosphor powder and a colloid, and is used to make a part of the corresponding first luminescent wafers have a peak wavelength range of 200913248 a projection source between 520 and 540 nm, and another portion of the wavelength conversion layer is a mixture of orange and green phosphor powder and package colloid (or yellow camp) A mixture of a yeii〇w phosphor powder and a package (colloid) for causing another portion of the corresponding first luminescent wafer to produce a projection light source having a predetermined color temperature (c〇l〇r temperature ). Furthermore, the second illuminating wafers are alternately disposed on the rows of illuminating elements of different rows, respectively. In this way, the array type illuminating module is mixed with a white light source with a color rendering (c〇l〇r rendering index) between 90 and 95. Furthermore, each row of light-emitting elements is electrically connected to one substrate in parallel, and each of the rows of light-emitting elements is arranged in the blue-emitting dipole and the red light. The polar body wafers are electrically connected to the substrate in series with each other. Moreover, the voltage range of the blue light emitting diode chip is between 2.9 and 4.0 volts (V), and the voltage range of the red light emitting diode chip is between 1.8 and 2.8 volts (V). . Therefore, the circuit designer can freely match the blue light-emitting diode chip and the red light-emitting diode chip of different voltage values, so that each row of the light-emitting elements is arranged in the blue light-emitting diode b and the shai The total voltage value of the red light-emitting monolithic wafers in series with each other is about 12 volts. However, in the best case, the total voltage value of each row of light-emitting rows is 12 volts. In order to further understand the technology, the means and the effect of the present invention in order to achieve the intended purpose, refer to the following detailed description of the invention and the accompanying drawings. The invention is not to be construed as limiting the invention. [Embodiment] Please refer to the first figure and the second figure, which are respectively the top view of the first array type light-emitting device having a high color rendering index. And a cross-sectional view taken along line 2-2 of the first drawing of the present invention. As can be seen from the above figures, the present invention provides an array type light-emitting device having a high color rendering index, which includes: a substrate 1 and an array of light-emitting modules. (array type light-emitting module) 2, a plurality of wavelength-converting layer 3, and a plurality of transparent layers 4. In addition, the array type light emitting module 2 is electrically connected to the substrate 1 , and the array type light emitting module 2 is composed of a plurality of light-emitting rows (21, 22, 23, 24). ) composed of. Wherein, each row of light-emitting rows has a plurality of first light-emitting chips having an emission wavelength ranging from 450 to 460 nm and at least one light-emitting wavelength. The range is a second light-emitting chip between 620 and 640 nm. As shown in the first figure, the light-emitting element row 2 1 of the first row has three first light-emitting wafers 2 1 0 and one second light-emitting chip 2 1 1 . The second row of light-emitting element rows 2 2 has three first light-emitting wafers 2 2 0 and one second light-emitting crystal 11 200913248 2 3 0 and a plurality of light-emitting element arrays 2 3 have three first-light-emitting chip systems Beans have a piece of 23 P fourth row of hair pieces 2 4 ... its;;:! Light (4) 4 〇 and - a second illuminating wafer 2 4 ! Light-emitting diode crystals please == one hair nine-inch film (2 1 1 , 2 2 1 , 2 3 1 , 2 4 1 ) name ^ ^ , (red LED chip) 〇, b, h, M, a ';; 2 /V α,I -λ m ^ 2 3 1 2 4 1 )There are two sets of light-emitting elements arranged in different rows (21, MU2 m Bu Temple first light-emitting chip) (2i0, 220, 230, 3 4 CO and the second specific light-emitting chip (2丄丄, 2 2丄, 2 3丄, 2 4 1) are separated from each other by a predetermined distance., the wavelength conversion layer 3 The light-emitting layers 4 are respectively overlaid on the second light-emitting wafers (211, 2 2 41). One of the wavelength conversion layers 3 is an orange phosphor powder and an encapsulant (packagec), which is used to make one of the first light-emitting wafers (for example) The fourth row of illuminators, the third illuminating wafer 2 4 Q in column 24, produces a projection source having an emission peak wavelength ranging from 595 to 610 nm. wherein 'one of the wavelength conversion layers 3 Green fluorescent powder (gre En phosphorp0W(}er) and a package colloid (packagec〇I1〇(4) mixed 3 G for making a part of the corresponding first luminescent wafer (for example, the first 12 200913248 row of illuminating element columns 2 of the fourth A light-emitting chip 2 process and a second light-emitting chip 2 2 in the second row of light-emitting element rows 2 2 generate an emission peak. The value wavelength ranges from "48 〇 to 495 nm" or r52 〇 〜 54 a projection light source between 〇 nm. wherein 'part of t of the wavelength conversion layer 3 is a combination of ydlow phosphor powder and encapsulation colloid (packagec〇11〇id)) a portion of the corresponding first light-emitting chip (for example, the first first light-emitting chip 21 in the first f-row light-emitting element array 21 and the first first light-emitting chip 2 in the second row of light-emitting element rows 2 2 2 〇) Produce a color temperature between 2800~7,000 」" or ryooo-n'QooK" projection = source. In addition, the above yellow fluorite powder can be replaced by orange and green mixed fluorescing. Uncle (〇range And §reen Ph〇sph〇r powder ), and the orange and green mixed # Based mixed powder and the package body (package c〇u〇id) for causing the other of the first blade 々 entry corresponds projection light source having a light emitting chip to generate a predetermined color temperature (col〇r temperature) of. Thereby, a portion of the visible light emitted by the first light-emitting wafers (210, 220, 230, 240) is absorbed by the wavelength conversion layer 3 = replaced with visible light having another light-emitting peak wave And the visible light having the wavelength range of the other illuminating bee is mixed with the projection light source generated by the second illuminating chip (2丄丄, 231'241), so that the vehicle J ♦ optical module 2 is mixed with color rendering (cringi〇r ren(jering incjex) is a white light source between 90 and 95. However, the first light-emitting chips (210, 220, 230, 240) and the second light-emitting chips (2) 1, 23 1 , 2 13 200913248 4 1 ) The arrangement is not intended to limit the invention. Each row of light-emitting rows (21, 22, 23, 24) has at least one Two light-emitting chips (211, 221, 231, 241), and the wavelength conversion layers 3 are mixed with different proportions of phosphor powder (phosph〇r pomier) and encapsulant (package c〇11〇id). Covering the first illuminating wafers (21〇, 220, 230, 240) respectively is protected by the invention The range of β > is shown in the second figure, which is the circuit diagram of the first type of light-emitting device with high color rendering mdex. As shown in the third figure, the array type light-emitting module 2 is composed of four rows of light-emitting element columns (light_emitting_) κ: 丨2 1 , 2 2, 2 3, 2 4 ). The -emlttmg window has three illuminating wafers and a second priming wafer to be combined into a 4X4 array illuminating module. Furthermore, the 苴=element columns (21, 22, 23'24) are electrically connected to each other on the substrate, and each row of the illuminating element columns (2 pieces are tied, 2 4) The first-light-emitting wafer and the second luminescent crystal are electrically connected to the substrate. The voltage range of the volt-female-first illuminating chip is between 2·9 and 4·0 2, and the volts of the second illuminating chip are in the first illuminating range of the U~ value. m', the circuit designer can freely match the different voltages (2) "the first light-emitting chip" so that each of the rows of light-emitting elements arrays 23, 24) of the first light-emitting wafer and the second hair The total voltage after breaking this series is about 12 volts. However, in the case of the best 14 200913248, the total voltage value of each row of light-emitting rows is 12 volts. See fourth a The figure shows a schematic diagram of a light-emitting chip arrangement of a first embodiment of an array type light-emitting device having a high color rendering index according to the present invention. An embodiment is described as follows: B + P ( 0 G ) is "through a blue LED chip B with orange and green phosphor powder" Mix P (〇G)' with the package colloid to produce color temperature (color Temperature) is a white projection source between 2800 and 7000 K. B + P (G) is "through a blue LED chip (bh^ LED chip) B with fine phosphor (green phosphor) Powder) mixed with package colloid p (G) to produce a green projection light source with a peak wavelength range of 520~540 nm"; B + P ( 0 ) is "through a blue light emitting diode A blue LED chip B is combined with an orange phosphor p0Wder and a package coU (p) to produce an orange projection source having an emission peak wavelength ranging from 595 to 610 nm; and R + T It is "through a red LED chip" R with the light transmissive layer T to produce a red projection light source with an emission wavelength range of (four) ~ 64 feet. Therefore, a portion of the visible light of the blue LED chip B is absorbed and converted through different wavelength conversion layers (P(QG), P(G), 15 200913248 p (〇)). Is visible light having another illuminating peak wavelength range, and the visible light having another illuminating peak wavelength range is mixed with the projection light source generated by the red illuminating diode chips R to make the first array illuminating method of the present invention The first embodiment of the module is capable of mixing a white light source with a high color rendering index between 2500 and 4000K. Please refer to the second embodiment of the present invention, which is a schematic diagram of a light-emitting chip arrangement of a second embodiment of the first array type light-emitting device having a high color rendering index. The description of the second embodiment of the fourth b diagram is as follows: B + P (〇G) is "through a blue LED chip B with a blend of green and green phosphors" (orange and green phosphor powder) and a mixture of package colloids P (〇G)' to produce a white projected light source with a color temperature between 2800 and 7000 K"; B + P (G) "To pass a blue LED chip B with a mixture of green phosphor powder and package colloid P (G) ' to produce an emission peak wavelength range of 520 ~540 nm green projection light source"; .B + P (g) is "through a blue LED chip B with green phosphor powder and package colloid (package colloid a mixture of P ( g ) ' to produce a green projected light source with a peak wavelength range of 480 to 495 nm"; B + P (〇) is a "blue LED chip B" With orange phosphor powder and seal Glue 16 200913248 packagecollold mix p (〇) to produce an orange projection source with an emission peak wavelength range of 595~610 mn"; and R + T is a "transmission-red LED chip (redLEDchip) R The light transmissive layer T is combined to generate a red projection light source having an emission wavelength range of (four) to 64Qnm. Therefore, a portion of the visible light of the light-emitting diode chip (bhieLED chip) B is absorbed by different wavelength conversion layers (p (〇G )' p (g), rp (g ), p (〇)). And converting into visible light having another luminescence peak wavelength range and the visible light having another luminescence peak wavelength range is mixed with the projection light source generated by the red illuminating diode wafers R to make the first array of the present invention The second embodiment of the illuminating module is capable of mixing a white light source with an excellent temperature between 4000 and 6000 K. Please refer to the fourth c-figure, which is a schematic diagram of a light-emitting chip configuration of a third embodiment of the first array type light-emitting device having a high color rendering index. v The description of the second embodiment of the four-C diagram is as follows: B + P (〇G) is "through a blue LED chip B with orange and green mixed fluorescence A mixture of yellow phosphor powder and package colloid P (〇G) to produce a white projection source with a color temperature between 7000 and 11,000 K; B + P (G) is "By a blue LED chip B with a mixture of green phosphor powder and encapsulant 17 200913248 package colloid to generate an emission peak wavelength range. Green projection light source at 520~540 nm"; B + P (g) is "through a blue LED chip B with green phosphor powder and package colloid a mixture of p ( g ) to produce a green projection source with an emission peak wavelength in the range of 480 to 495 nm; B + P (〇) is a "transmission through a blue LED chip (blue; LED chip) B with orange phosphor powder (〇range phosphor powder) A mixture of package colloids p (〇) to produce an orange projection source with an emission peak wavelength range of 595 to 610 nm; and R + T is a "red LED chip (red) LED chip) R is combined with the light transmissive layer T to produce a red projection light source having an emission wavelength range of 62 〇 to 64 〇 nm. Therefore, a portion of the visible light of the blue light-emitting diode chip (bhieLED chip) B is transmitted through different wavelength conversion layers (p (〇G), p (G), P (g), P (〇)). And converting the visible light having another luminescence peak wavelength range and the visible light having the other luminescence peak wavelength range is mixed with the projection light source generated by the red illuminating diode R to make the first type of the invention The third embodiment of the array type light-emitting module can mix a white light source with a high color rendering (c〇i〇rrendering index) with an excellent temperature between 6000 and 9000 Å. Please refer to the fifth and sixth figures, which are respectively a second view of an array type light-emitting device having a high color rendering index according to the present invention, and a first aspect of the present invention. Figure 5 - 6 Section 18 200913248 View. As can be seen from the above figures, the biggest difference between the second array type light-emitting device of the present invention and the first array type light-emitting device is that the substrate 1' of the second array type light-emitting device has a plurality of closely arranged contents. a first illuminating wafer of a plurality of light-emitting rows (21, 22>, 23', 24') of a plurality of arrays of light-emitting modules 2' (210, 220, 230, 240) and the second illuminating wafers (21 1 , 2 2 1 , 2 3 1 , 2 41) are respectively accommodated in the corresponding accommodating grooves 10/. Please refer to the seventh embodiment and the seventh embodiment, which are respectively the second embodiment of the second type of array type light-emitting device with high color rendering index of the present invention. A schematic diagram of the illuminating wafer configuration and a spectrogram. The description of the first embodiment of the seventh diagram is as follows: B + P (〇G) is "through a blue LED chip B with an orange and green mixed phosphor ( Orange and green phosphor powder) mixed with package colloid P ( 〇G ) to produce a white projected light source with a color temperature between 2800 and 7000 K; B + P ( G ) is "By a blue LED chip B with a mixture of green phosphor powder and package colloid P (G) ' to produce an emission peak wavelength range of 520~ 540 nm green projection light source; B + P ( 0 ) is "through a blue LED chip (blueIJED chip) B with orange phosphor powder and encapsulant 19 200913248 body (package Colloid) is a mixture of p and n, 1n ^ and P (〇) to produce a color-emitting source with an emission peak wavelength range of 595 to 10 nm; and 2: a transmission-red LED chip (red LED chip) R with light transmissive layer Τ' ㈣~_ green light emission wavelength range of light projection. " & Therefore, the portions of the visible light of the blue light-emitting diode wafer (-Gana) are absorbed by different wavelength conversion layers (p(〇G), p(G), P(〇)) and Converting into visible light having a different wavelength range of the illuminating peak, and the visible light having the wavelength range of the other illuminating peak is mixed with the projection light source generated by the red luminescent diode R to make the first practical example of the present invention The array type light-emitting module can be mixed (as shown in FIG. 7A) with a color rendering (CRI) of 93.16 and a color temperature of 2500 to 4000 K with a high color rendering (c〇i〇r rendering index) white light source. Please refer to the seventh embodiment and the seventh embodiment, which are respectively a second embodiment of the second array type light-emitting device having a high color rendering index according to the present invention. A schematic diagram of the illuminating wafer configuration and a spectrogram. The description of the second embodiment of the seventh b diagram is as follows: B + P ( 0 G ) is "through a blue LED chip B with orange and green mixed phosphor powder ( Orange and green phosphor powder) and P (〇G) mixed with package colloid to produce a white projection light source with a color temperature between 2800 and 7000 K"; 20 200913248 B + P ( G ) It is "through a blue LED chip B with a mixture of green phosphor powder (greenph〇sph〇rp〇wder) and package colloid P (〇) to produce the peak wavelength of the emission. a green projection light source ranging from 520 to 540 nm; and R + T is a "red LED chip through a red light emitting diode chip" R with a light transmissive layer T to produce an emission wavelength range of 62 〇 64〇nm red projection light source." Therefore, a portion of the visible light of the blue LED chip B is absorbed and converted to have another illuminating peak wavelength range through different wavelength conversion layers (p (〇G), p (G)). The visible light, and the visible light having another wavelength range of the illuminating peak is mixed with the projection light source generated by the red light emitting diode chips R, so that the array type light emitting module of the second embodiment of the present invention can be mixed out ( As shown in Figure 7B, the color rendering (CRI) is 90.46 'color> and the dish is a white light source of 4000 to 6000 K CQi〇r rendering index. The third embodiment of the array type light-emitting device having the second color rendering index is the second embodiment of the present invention. A schematic diagram of the illuminating wafer configuration and a spectrogram. The description of the third embodiment of the seventh c diagram is as follows:

B + P (〇G ) ’係為「透過一藍色發光二極體晶片（blue LED chip ) B配合橙色及綠色混合之螢光粉（orange and green phosphor powder)與封裝膠體（package colloid )之混合 P (〇 G) ’，以產生色溫（color temperature)介於 7000 〜11，〇〇〇K 21 200913248 之間的白色投射光源」； B + P ( G )係為「透過一藍色發光二極體晶片（blueLED chip) B配合綠色螢光粉（greenph〇s沖〇rp〇wder)與封裝膠 體（packagecolknd)之混合p ( G )，以產生發光峰值波長範 圍介於520〜540 nm的綠色投射光源」；以及 R + T係為「透過—紅色發光二極體晶片（red LED chip) R配合透光層T ’以產生發光波長範圍為62〇〜64〇麵的紅色 投射光源」。 因此，該等藍色發光二極體晶片（blueLEDchip) B之可 見光的一部份係透過不同波長轉換層（p (〇G),、p (G)) 吸收亚轉換為具有另-發光峰值波長翻之可見光，並且該具 有另-發光峰值波長範圍之可見光與該等紅色發光二極體晶 片R所產生之扠射光源相混合，以使得本發明第三實施例之陣 列式發光模組能混合出（如第tCsj所示）演色性（⑶）為 90.18，色溫為 6000〜9〇〇〇 κ 之高演色性（color rendering index)白色光源。 綜上所述，本發明的特點在於：每一排發光元件列係具有 複數個藍色發光二極體晶片（blue LED chip)及至少—紅色發 光光晶片（redLEDchip)。並且’該等波長轉換層之其中 口I5刀為、'彔色备光粉（green p〇W(jer)與封裝膠體 (package colloid)之混合，其用於使得一部分相對應之第一 卷光B0片產生發光峰值波長範圍介於520〜540 nm之間之投 =光源’並且該等波長轉換層之另一部分為橙色及綠色混合之 k 光粉（orange and green phosphor powder )與封裝膠體 22 200913248 (package colloid)之混合（或是黃色螢光粉（yeu〇w ph〇Sph〇r powder)與封裝膠體（package colloid)之混合），其用於使得 另一部分相對應之第一發光晶片產生具有預定色溫（color temperature)之投射光源。此外’該等第二發光晶片係彼此交 替地（alternatively)分別設置在不同排的發光元件列上。藉 此以使得該陣列式發光模組混合出演色性（c〇l〇r rendering index)介於90〜95之間之白色光源。 惟，以上所述，僅為本發明最佳之一的具體實施例之詳細 s兒明與圖式，惟本發明之特徵並不侷限於此，並非用以限制本 發明，本發明之所有範圍應以下述之申請專利範圍為準，凡合 於本發明申請專利範圍之精神與其類似變化之實施例，皆應包 含於本發明之_巾，任何熟悉糾技#者在本發明之領域 内’可輕易思及之變化或修飾皆可涵蓋在以下本案之專利範 圍。 【圖式簡單說明】 第一圖係為本發明第—種具有高演色性（c〇l〇r rendering index )之陣列式發光裝置（拉吵Hght-emitting device)之上視圖； ^圖係為本發明第—圖之2—2剖視圖； 第二圖係為本發明第—種具有高演色性（⑶k )之陣列式發光裝置（array type light-emitting device)之電路圖； 第四a iM系為本發明第—種具有高演色性（⑶—rendering 23 200913248 index)之陣列式發光裝置（array type light-emitting device)的第一實施例之發光晶片配置示意圖； 第四b圖係為本發明第一種具有高演色性（color rendering index)之陣列式發光裝置（array type light-emitting device)的第二實施例之發光晶片配置示意圖； 第四c圖係為本發明第一種具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)的第三實施例之發光晶片配置示意圖； 第五圖係為本發明第二種具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)之上視圖； 第六圖係為本發明第五圖之6 — 6剖視圖； 第七a圖係為本發明第二種具有高演色性（color rendering index)之陣列式發光裝置（array type light-emitting device)的第一實施例之發光晶片配置示意圖； 第七A圖係為本發明第二種具有高演色性C color rendering index)之陣列式發光裝置（array type light-emitting device)的第一實施例之光譜圖（spectrogram); 第七b圖係為本發明第二種具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)的第二實施例之發光晶片配置示意圖； 第七B圖係為本發明第二種具有高演色性C color rendering index )之陣列式發光裝置（array type light-emitting device)的第二實施例之光譜圖（spectrogram); 24 200913248 弟七C圖係為本發明镇_轴曰士_ &gt; . 弟一種具有尚湞色性（color rendering )之陣列式發光裝置（array type light-emitting … &amp;繼）@第三實施例之發光晶片配置示意圖；以及 弟七C圖係為本發明、〜 . . 弟—種具有南〉貝色性（color rendering •.)之陣列式發光裝置（array type light-emitting ')的弟二貫施例之光譜圖（spectrogram)。B + P (〇G ) ' is "through a blue LED chip B with orange and green phosphor powder and package colloid" Mix P (〇G) ' to produce a white projected light source with a color temperature between 7000 and 11, 〇〇〇K 21 200913248"; B + P (G) is "through a blue light two A blue LED chip B is combined with a mixture of green phosphor powder (greenph〇s 〇rp〇wder) and a package collknd p ( G ) to produce a green light having a peak wavelength range of 520 to 540 nm. The projection light source; and the R + T system are "red-light emitting diodes (red LED chips) R with the light-transmitting layer T' to generate a red projection light source having an emission wavelength range of 62 〇 64 64 」". Therefore, a portion of the visible light of the blue LED chip B is transmitted through different wavelength conversion layers (p (〇G), p (G)) to be sub-converted to have another peak wavelength. The visible light is turned over, and the visible light having the other wavelength range of the illuminating peak is mixed with the cross light source generated by the red light emitting diode chips R, so that the array type light emitting module of the third embodiment of the present invention can be mixed. A color rendering index white light source with a color rendering ((3)) of 90.18 and a color temperature of 6000 to 9 〇〇〇 κ (shown as tCsj). In summary, the present invention is characterized in that each row of light-emitting elements has a plurality of blue LED chips and at least a red LED chip. And 'the wavelength of the wavelength conversion layer I5 knife is, 'green color powder (jer) and package colloid mixed, which is used to make a part of the corresponding first roll of light The B0 film generates a light source with a peak wavelength range of 520 to 540 nm and the other portion of the wavelength conversion layer is an orange and green phosphor powder and an encapsulant 22 200913248 a mixture of (package colloid) (or a mixture of yellow fluorescein powder and package colloid) for causing another portion of the corresponding first luminescent wafer to be produced a projection light source of a predetermined color temperature. Further, the second light-emitting chips are alternately disposed on the rows of light-emitting elements of different rows, respectively, thereby allowing the array-type light-emitting module to be mixed with color rendering. (c〇l〇r rendering index) A white light source between 90 and 95. However, as described above, it is only a detailed description of the specific embodiment of the present invention, but the present invention The features of the present invention are not limited thereto, and are not intended to limit the scope of the present invention. All the scope of the present invention should be determined by the following claims. In the scope of the present invention, any changes or modifications that can be easily considered in the field of the present invention can be covered in the following patent scope of the present invention. The invention is a top view of an array type illuminating device with a high color rendering (c〇l〇r rendering index); ^ is a cross-sectional view of the second section of the invention; The second figure is a circuit diagram of the first type of array type light-emitting device with high color rendering ((3)k); the fourth a iM is the first type of the invention has high color rendering ((3)- Rendering 23 200913248 index) The arrangement of the light-emitting chip of the first embodiment of the array type light-emitting device; the fourth b-picture is the first color of the invention with high color rendering (color re A schematic diagram of a light-emitting chip arrangement of a second embodiment of an array type light-emitting device; a fourth c-picture is the first array of the invention having a high color rendering index A schematic diagram of a light-emitting chip arrangement of a third embodiment of an array type light-emitting device; the fifth figure is a second array type light-emitting device having a high color rendering index (array type light- The sixth view is a cross-sectional view of the sixth figure of the fifth embodiment of the present invention; the seventh figure is the second type of light-emitting device of the present invention having a high color rendering index (array) A schematic diagram of a light-emitting chip arrangement of a first embodiment of the type light-emitting device; and a seventh type of an array type light-emitting device having a high color rendering index (Cray rendering index) The spectrogram of the first embodiment; the seventh b is the second array type illuminating device with high color rendering index of the present invention A schematic diagram of a light-emitting chip arrangement of a second embodiment of the array type light-emitting device; and a seventh type of light-emitting device of the second type with a high color rendering index (array type light-emitting device) Spectrogram of the second embodiment; 24 200913248 The brother of the seventh C is the invention of the town _ axis gentleman _ &gt; . An array of light-emitting devices with color rendering (array Type light-emitting ... &amp; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A spectrogram of a second embodiment of an array type light-emitting device.

發光元件列 2 1 第一發光晶片 2 10 第二發光晶片 2 11 發光元件列 22 第一發光晶片 2 20 第二發光晶片 2 2 1 發光元件列 2 3 第一發光晶片 2 3 0 第二發光晶片 2 3 1 發光元件列 2 4 第一發光晶片 2 4 0 第二發光晶片 2 4 1 發光元件列 2 1’ 發光元件列 2 2’ 發光元件列 2 3’ 【主要元件符號說明】 基板 1 陣列式發光模組 「 陣列式發光模組 2, 25 200913248 發光元件列 2 4’ 波長轉換層 3 橙色螢光粉與封裝膠體之混合 3〇 綠色螢光粉與封裝膠體之混合 3 G 黃色螢光粉與封裝膠體之混合 3 Y 透光層 4Light-emitting element row 2 1 first light-emitting chip 2 10 second light-emitting chip 2 11 light-emitting element row 22 first light-emitting chip 2 20 second light-emitting chip 2 2 1 light-emitting element row 2 3 first light-emitting chip 2 3 0 second light-emitting chip 2 3 1 light-emitting element row 2 4 first light-emitting chip 2 4 0 second light-emitting chip 2 4 1 light-emitting element row 2 1' light-emitting element row 2 2' light-emitting element row 2 3' [main element symbol description] substrate 1 array type Light-emitting module "Array light-emitting module 2, 25 200913248 Light-emitting element column 2 4' Wavelength conversion layer 3 Mixing of orange phosphor powder and encapsulant 3〇 Mixing green phosphor powder and encapsulant 3 G yellow phosphor powder and Encapsulated colloidal mixed 3 Y light transmissive layer 4

藍色發光二極體晶片 BBlue LED Diode Wafer B

紅色發光二極體晶片 RRed LED chip R

透光層 T 橙色及綠色混合之螢光粉與封裝膠體之混合 P(OG) 橙色及綠色混合之螢光粉與封裝膠體之混合 P (OG) ’綠 色螢光粉與封裝膠體之混合 P(G) 橙色螢光粉與封裝膠體之混合 P(〇） 26Light-transmissive layer T Mixing of orange and green mixed phosphor powder and encapsulant P(OG) Mixing of orange and green mixed phosphor powder and encapsulant P (OG) 'Phosphor of green phosphor powder and encapsulant P ( G) Mixing of orange phosphor and encapsulant P(〇) 26

Claims (1)

200913248 十、申請專利範圍： 1 種具有咼演色性（color rendering index )之陣列式發光 表置（array type light-emitting device )，其包括： 一基板（substrate); 陣列式發光模組（array type light-emitting module )，其 電性連接地設置於該基板上’並且該陣列式發光模組係 由複數排發光元件列（light-emitting row)所組成，其 中母一排發光元件列（light-emitting row)係具有複數 個發光波長（emission wavelength)範圍介於450〜460 聰之間之第一發光晶片（first light-emitting chip )及 至少一發光波長範圍係介於620〜640 nm之間之第二 發光晶片（second light-emitting chip ); 複數層波長轉換層（wavelength-converting layer)，其分 別復蓋在§亥寺弟一發光晶片上’其中該等波長轉換層之 其中一部分為綠色螢光粉（green phosphor powder)與 封裝膠體（package colloid)之混合，其用於使得一部 分相對應之第一發光晶片產生發光峰值波長範圍介於 520〜540 nm之間之投射光源，並且該等波長轉換層之 另一部分為黃色螢光粉（yellow phosphor powder )與封 裝膠體（package colloid)之混合，其用於使得另一部 分相對應之第一發光晶片產生具有預定色溫（c〇i〇r temperature)之投射光源；以及 複數個透光層（transparent layer)，其分別覆蓋在該至少 一第二發光晶片上； 27 200913248 措此^等第—發光晶片所發出之可見光的—部份係透過 f等波長轉換層吸收並轉換為具有另一發光峰值波長 範圍之可見光，並且該具有另一發光峰值波長範圍之可 見，14 „亥等第一發光晶片所產生之投射光源相混合，以 使仔該陣列式發光模組混合出演色性（color rendering index)介於9〇〜95之間之白色光源。 2、 如申請專利範圍第丄項所述之具有高演色性（c〇i〇r f rendering index )之陣列式發光裝置（array type light-emitting device )，其中該等第一發光晶片係為藍色發 光一極體晶片（blue LED chip)’並且該等第二發光晶片 係為紅色發光二極體晶片（red LED chip)。 3、 如申请專利範圍第1項所述之具有高演色性（c〇i〇r rendering index )之陣列式發光裝置（array type light-emitting device )，其中該等第二發光晶片係彼此交替 地（alternatively)分別設置在不同排的發光元件列上。 4、 如申請專利範圍第1項所述之具有高演色性（c〇i〇r ( rendering index )之陣列式發光裝置（array type light-emitting device )，其中該預定色溫係介於2800〜 11，000 K之間之投射光源。 5、 如申請專利乾圍弟1項所述之具有而演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)，其中該黃色螢光粉係由橙色螢光粉 (orange phosphor powder )混合綠色螢光粉（green phosphor powder)而成。 28 200913248 6、 如申請專利範圍第1項所述之具有高演色.性（c〇l〇r rendering index )之陣列式發光裝置（array type light-emitting device)’其中該等波長轉換層之其中一層為 橙色螢光粉（orange phosphor powder )與封裝膠體 (package colloid)之混合，其用於使得其中一相對應之 第一發光晶片產生發光峰值波長範圍介於595〜610 nm 之間之投射光源。 7、 如申請專利範圍第1項所述之具有高演色性（c〇1〇r rendering index )之陣列式發光裝置（array type liglit-emittmg device) ’其中該等波長轉換層之另一部分為 綠色螢光粉（green phosphor powder )與封裝膠體（package colloid)之混合’其用於使得一部分相對應之第一發光晶 片產生發光峰值波長範圍介於480〜495 nm之間之投射 光源。 8、 如申请專利|巳圍第1項所述之具有高演色性（c〇1〇r rendering index )之陣列式發光裝置（抓吖type light-emitting device)，其中該等波長轉換層係為螢光粉 (phosphor powder)與封裝膠體（packagec〇u〇id)以不 同比例成分所混合而成。 9、 如巾請專利範圍第1項所述之具有高演色性（c〇i〇r 腺denng index )之陣列式發光裝置（抓吖 Hght-emhtmg dev1Ce)，其中每一排發光元件列係彼此並聯 地（pamllelly)電性連接於該基板上。 29 200913248 1 0、如申請專利範圍第1項所述之具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)，其中每一排發光元件列之該等第一 發光晶片及該第二發光晶片係彼此串聯地（seriesly)電 性連接於該基板上。 1 1、如申請專利範圍第1項所述之具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)，其中該陣列式發光模組係由四排發 光元件列（light-emitting row)所組成，每一排發光元件 列（light-emitting row )係具有三個第一發光晶片及一個 第二發光晶片，以組合成4X4的陣列式發光模組。 1 2、如申請專利範圍第1項所述之具有高演色性（coIot rendering index )之陣列式發光裝置（array type light-emitting device )，其中每一個第一發光晶片的電壓值 範圍係介於2.9〜4.0伏特（V)之間，該第二發光晶片的 電壓值範圍係介於1.8〜2.8伏特（V)之間。 1 3、如申請專利範圍第1項所述之具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device )，其中每一排發光元件列 (light-emitting row)的總電壓值係為12伏特。 1 4、如申請專利範圍第1項所述之具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device )，其中該等第一發光晶片及該等第二 發光晶片係彼此分離一預定距離。 30 200913248 1 5、如申請專利範圍第1項所述之具有高演色性（color rendering index )之陣列式發光裝置（array type light-emitting device)，其中該基板具有複數個彼此緊密排 列之容置槽（receiving space )，並且該等第一發光晶片及 該等第二發光晶片係分別容置於該等相對應之容置槽内。 31200913248 X. Patent application scope: A type of array type light-emitting device having a color rendering index, comprising: a substrate; an array type light emitting module (array type) The light-emitting module is electrically connected to the substrate, and the array of light-emitting modules is composed of a plurality of light-emitting rows, wherein the mother row of light-emitting elements (light- The emitter row has a plurality of first light-emitting chips having an emission wavelength ranging from 450 to 460, and at least one wavelength range of 620 to 640 nm. a second light-emitting chip; a plurality of wavelength-converting layers respectively covering a light-emitting wafer of §Haisi's illuminating wafer, wherein a part of the wavelength conversion layers is green fluorescing a mixture of a green phosphor powder and a package colloid, which is used to make a portion of the corresponding first luminescent wafer a projection light source having an emission peak wavelength ranging from 520 to 540 nm, and another portion of the wavelength conversion layer being a mixture of a yellow phosphor powder and a package colloid, which is used to make another a portion of the corresponding first illuminating wafer generates a projection light source having a predetermined color temperature; and a plurality of transparent layers respectively covering the at least one second illuminating wafer; 27 200913248 The portion of the visible light emitted by the illuminating wafer is absorbed by the wavelength conversion layer of f and converted into visible light having another wavelength range of the illuminating peak, and the wavelength range of the other illuminating peak is visible, 14 The projection light sources generated by the first illuminating wafer such as Hai are mixed so that the array illuminating module mixes a white light source with a color rendering index between 9 〇 and 95. Array type light-emitting device with high color rendering (c〇i〇rf rendering index) as described in the scope of the third item Device), wherein the first luminescent wafers are blue LED chips&apos; and the second luminescent wafers are red LED chips. 3. An array type light-emitting device having a high color rendering performance as described in claim 1, wherein the second light emitting chips are alternately arranged (Alternatively) are respectively arranged on different rows of light-emitting element columns. 4. An array type light-emitting device having a high color rendering (c〇i〇r ( rendering index) according to the first aspect of the patent application, wherein the predetermined color temperature system is between 2800 and 11 a projection light source between 000 K. 5. An array type light-emitting device having a color rendering index as described in claim 1 of the patent application, wherein the yellow fluorescent light The powder is made up of orange phosphor powder mixed with green phosphor powder. 28 200913248 6. High color rendering as described in item 1 of the patent application (c〇l〇r An array type light-emitting device in which one of the wavelength conversion layers is a mixture of an orange phosphor powder and a package colloid, which is used to make One of the corresponding first illuminating wafers generates a projection light source having an emission peak wavelength ranging from 595 to 610 nm. 7. The high performance as described in claim 1 (array type liglit-emittmg device) 'where the other part of the wavelength conversion layer is green phosphor powder and package colloid The mixture is used to cause a portion of the corresponding first luminescent wafer to produce a projection light source having an illuminating peak wavelength ranging from 480 to 495 nm. 8. High color rendering as described in claim 1 (c〇1〇r rendering index) an array type light-emitting device, wherein the wavelength conversion layer is a phosphor powder and a package colloid (packagec〇u〇id) Mixing different proportions of ingredients. 9. Array-type illuminating device with high color rendering (c〇i〇r gland denng index) as described in item 1 of the patent scope (Hugh-emhtmg dev1Ce) Each row of light-emitting elements is electrically connected to the substrate in parallel with each other. 29 200913248 1 0. An array type light-emitting device having a high color rendering index as described in claim 1 wherein each row of light-emitting elements is listed first The luminescent wafer and the second luminescent wafer are electrically connected to each other in series. 1 1. An array type light-emitting device having a high color rendering index according to claim 1, wherein the array type light emitting module is composed of four rows of light emitting elements. The light-emitting row is composed of three first light-emitting chips and one second light-emitting chip to be combined into a 4×4 array light-emitting module. 1 2. An array type light-emitting device having a high color rendering (coIot rendering index) according to claim 1, wherein a voltage range of each of the first illuminating wafers is between Between 2.9 and 4.0 volts (V), the voltage value of the second luminescent wafer ranges between 1.8 and 2.8 volts (V). 1 . An array type light-emitting device having a high color rendering index as described in claim 1 wherein each row of light-emitting rows The total voltage value is 12 volts. The array type light-emitting device having a high color rendering index as described in claim 1, wherein the first light emitting chip and the second light emitting chip They are separated from each other by a predetermined distance. 30. The invention relates to an array type light-emitting device having a high color rendering index as described in claim 1, wherein the substrate has a plurality of closely arranged housings. a receiving space, and the first illuminating wafer and the second illuminating chip are respectively received in the corresponding accommodating grooves. 31
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