JP2009060069A - Array-type light-emitting device having high color-rendering properties - Google Patents

Array-type light-emitting device having high color-rendering properties Download PDF

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JP2009060069A
JP2009060069A JP2007291095A JP2007291095A JP2009060069A JP 2009060069 A JP2009060069 A JP 2009060069A JP 2007291095 A JP2007291095 A JP 2007291095A JP 2007291095 A JP2007291095 A JP 2007291095A JP 2009060069 A JP2009060069 A JP 2009060069A
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light emitting
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high color
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Chih-Liang Su
智良 蘇
Hsin-Chun Liu
信均 劉
Fang-Po Wang
方波 王
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Ledtech Electronics Corp
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Abstract

<P>PROBLEM TO BE SOLVED: To provide an array-type light-emitting device having high color-rendering properties. <P>SOLUTION: The array-type light-emitting device having high color-rendering properties includes a substrate 1, an array-type light-emitting module 2 electrically connected to the substrate 1, a plurality of wavelength conversion layers 3 and a plurality of translucent layers 4. The array-type light-emitting module 2 comprises a plurality of light-emitting element columns, and each light-emitting element column has a plurality of first light-emitting chips and at least one second light-emitting chip. The wavelength conversion layers 3, respectively cover the first light-emitting chips. A part of visible light emitted by the first light-emitting chips is absorbed by the wavelength conversion layers and is also converted into a certain visible light of another light-emitting peak wavelength range; the visible light having another light-emitting peak wavelength range and the projected light generated by the second light-emitting chip are respectively light-combined; and the array-type light-emitting module 2 becomes possible to light-combine white light whose color-rendering properties is interposed between 90 and 95. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、発光装置に係り、特に、高演色性のあるアレイ型発光装置を指すものである。   The present invention relates to a light emitting device, and particularly refers to an array type light emitting device having high color rendering properties.

発光ダイオード(Light-Emitting Diode;LED)は半導体装置で、サイズがいずれも小さく、その利点は、明るいカラーを高い効率で発生できる発射光源であり、かつ、発光ダイオードが発する光は、最適な単色ピークを有することにある。複数の発光ダイオードの発射を拡散及び合成することによって白光を発生させる場合、カラー合成の方法が必要である。   Light-Emitting Diode (LED) is a semiconductor device that is small in size and has the advantage that it is a light source that can generate bright colors with high efficiency, and the light emitted from the light-emitting diode is an optimal single color. It has a peak. When white light is generated by diffusing and combining the firing of multiple light emitting diodes, a method of color composition is required.

例えば、それぞれが発射光源であり、その波長が赤、緑、または青の可視光範囲内にそれぞれ介在する三つの発光ダイオード（すなわち、それぞれ赤色発光ダイオード、緑色発光ダイオード及び青色発光ダイオード）同士は、互いに近く設置しなければならない。しかしながら、各発光ダイオードはいずれも最適な単色ピークを有するため、これらのカラー色で合成して発生した白光が不均一になることもしばしばある。すなわち、三原色の発射光源で合成してから発生した白光は、不均一になる可能性があるため、三原色の発射光源は、あらゆる方式で合成することができない。   For example, three light emitting diodes, each of which is a emission light source and each having a wavelength within the visible light range of red, green, or blue (that is, a red light emitting diode, a green light emitting diode, and a blue light emitting diode, respectively), Must be installed close to each other. However, since each light emitting diode has an optimal single color peak, white light generated by combining these color colors often becomes non-uniform. In other words, since the white light generated after combining with the three primary color emission light sources may be non-uniform, the three primary color emission light sources cannot be combined in any manner.

言い換えれば、高演色性(color renderingindex;CRI)の白光は、常に、半導体発光源が追求する目標である。上記のように、従来では様々な波長の発光ダイオードチップ、例えば、赤、緑、青の三色チップで配置してなる発光源を使用することがあるが、このような発光源は、演色性の８０％程度しか達成できず、かつ、従来は光合成が不均一という問題があった。   In other words, white light with high color rendering index (CRI) has always been a goal pursued by semiconductor light emitting sources. As described above, conventionally, light emitting diode chips having various wavelengths, for example, light emitting sources arranged in three-color chips of red, green, and blue, may be used. However, there has been a problem that photosynthesis is not uniform.

以上から分かるように、前記従来の白光発光装置は、実際の使用では、不便や欠点が明らかに存在している。   As can be seen from the above, the conventional white light emitting device clearly has inconveniences and disadvantages in actual use.

そのため、本発明者は、前記欠点が改良できるのを感心して、長年以来この領域で積み立てた経験により、専念な観察かつ研究をし、さらに学術理論の運用に合せ、やっと合理な設計且つ前記の欠点を有効に改良できた本発明を提案した。   Therefore, the present inventor was impressed that the above-mentioned defects could be improved, and made extensive observations and researches based on the experience accumulated in this area since many years. The present invention has been proposed in which the drawbacks can be effectively improved.

本発明は、基板、アレイ型発光モジュール、複数の波長変換層(wavelength-converting layer)、及び複数の透光層(transparentlayer)を含む高演色性(color rendering index)のあるアレイ型発光装置(array type light-emitting device)を提供することを目的とする。   The present invention relates to an array light emitting device having a color rendering index including a substrate, an array light emitting module, a plurality of wavelength-converting layers, and a plurality of transparent layers. The purpose is to provide a type light-emitting device).

前記アレイ型発光モジュールは前記基板に電気的に接続され、前記アレイ型発光モジュールは、複数列の発光素子列からなり、各列の発光素子列は、発光波長範囲が４５０〜４６０ｎｍの間に介在する複数の第１の発光チップと、発光波長範囲が６２０〜６４０ｎｍの間に介在する少なくとも一つの第２の発光チップとを備える。   The array type light emitting module is electrically connected to the substrate, and the array type light emitting module is composed of a plurality of light emitting element rows, and each light emitting element row is interposed between light emission wavelength ranges of 450 to 460 nm. A plurality of first light emitting chips, and at least one second light emitting chip interposed between 620 to 640 nm in the light emission wavelength range.

また、前記波長変換層うちの一部は、緑色蛍光粉及びパッケージコロイドの混合であり、これに対応する第１の発光チップは、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する投射光を発生するようになり、さらに、前記波長変換層の他一部は、黄色蛍光粉とパッケージコロイドの混合であり、これに対応する第１の発光チップは、所定の色温のある投射光を発生するようになる。   In addition, a part of the wavelength conversion layer is a mixture of green fluorescent powder and package colloid, and the first light emitting chip corresponding to this is a projection light having an emission peak wavelength range between 520 to 540 nm. Furthermore, the other part of the wavelength conversion layer is a mixture of yellow fluorescent powder and package colloid, and the corresponding first light emitting chip generates projection light having a predetermined color temperature. It becomes like this.

よって、前記第１の発光チップが発する可視光の一部は、前記波長変換層により吸収されかつ他の発光ピーク波長範囲のある可視光に変換され、該他の発光ピーク波長範囲を有する可視光及び前記第２の発光チップが発生する投射光は、それぞれ光合成され、このアレイ型発光モジュールは、演色性が９０〜９５の間に介在する白色光を合成できるようになる。   Therefore, a part of visible light emitted from the first light emitting chip is absorbed by the wavelength conversion layer and converted into visible light having another emission peak wavelength range, and visible light having the other emission peak wavelength range. The projection light generated by the second light emitting chip is synthesized, and the array type light emitting module can synthesize white light having a color rendering property between 90 and 95.

本発明が所定の目的を達成するために採択した技術、手段及び効果をより詳しく理解するために、以下に添付図面を参照しながら本発明に関わる詳細な説明を行う。これにより、本発明の目的および特徴が、深くかつ具体的に理解できると確信しているが、添付図面は参考及び説明のみに使われ、本発明の主張範囲を狭義的に局限するものではないことは言うまでもないことである。   DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to understand the technology, means and effects adopted in order to achieve a predetermined object, the present invention will be described in detail with reference to the accompanying drawings. Accordingly, the object and features of the present invention are believed to be deeply and concretely understood, but the attached drawings are used only for reference and explanation and do not narrowly limit the scope of the present invention. It goes without saying.

図１及び図２は、それぞれ、本発明の第１実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の平面図、及び本発明の図１の２−２線の断面図である。図から分かるように、本発明は、基板１、アレイ型発光モジュール２、複数の波長変換層(wavelength-converting layer set)３、及び複数の透光層(transparent layer set)４を含む高演色性(color rendering index)のあるアレイ型発光装置(array type light-emitting device)を提供する。   1 and 2 are a plan view of an array type light-emitting device having a color rendering index according to the first embodiment of the present invention, and FIG. 1 of the present invention, respectively. It is sectional drawing of a 2-2 line. As can be seen from the figure, the present invention includes a substrate 1, an array type light emitting module 2, a plurality of wavelength-converting layer sets 3, and a plurality of transparent layer sets 4. An array type light-emitting device with a (color rendering index) is provided.

アレイ型発光モジュール２は基板１に電気的に接続され、かつ、アレイ型発光モジュール２は、複数の発光素子列（２１、２２、２３、２４）からなる。各列の発光素子列は、発光波長範囲が４５０〜４６０ｎｍの間に介在する複数の第１の発光チップと、発光波長範囲が６２０〜６４０ｎｍの間に介在する少なくとも一つの第２の発光チップとを備える。   The array type light emitting module 2 is electrically connected to the substrate 1, and the array type light emitting module 2 includes a plurality of light emitting element rows (21, 22, 23, 24). Each of the light emitting element rows includes a plurality of first light emitting chips interposed between emission wavelengths ranging from 450 to 460 nm, and at least one second light emitting chip interposed between emission wavelengths ranging from 620 to 640 nm. Is provided.

図１に示すように、一列目の発光素子列２１は、３つの第１の発光チップ２１０及び１つの第２の発光チップ２１１を備える。二列目の発光素子列２２は、３つの第１の発光チップ２２０及び１つの第２の発光チップ２２１を備える。三列目の発光素子列２３は、３つの第１の発光チップ２３０及び１つの第２の発光チップ２３１を備える。四列目の発光素子列２４は、３つの第１の発光チップ２４０及び１つの第２の発光チップ２４１を備える。   As shown in FIG. 1, the first light emitting element array 21 includes three first light emitting chips 210 and one second light emitting chip 211. The second light emitting element array 22 includes three first light emitting chips 220 and one second light emitting chip 221. The third light emitting element array 23 includes three first light emitting chips 230 and one second light emitting chip 231. The fourth light emitting element array 24 includes three first light emitting chips 240 and one second light emitting chip 241.

そのうち、第１の発光チップ（２１０、２２０、２３０、２４０）は、青色の発光ダイオードチップで、第２の発光チップ（２１１、２２１、２３１、２４１）は、赤色の発光ダイオードチップであれば良い。また、第２の発光チップ（２１１、２２１、２３１、２４１）は、異なる行（互いに異なる２行）の発光素子列（２１、２２、２３、２４）にそれぞれ交互に設けられる。また、第１の発光チップ（２１０、２２０、２３０、２４０）及び第２の発光チップ（２１１、２２１、２３１、２４１）は、それぞれ、所定距離、隔てられている。   Among them, the first light emitting chip (210, 220, 230, 240) may be a blue light emitting diode chip, and the second light emitting chip (211, 221, 231, 241) may be a red light emitting diode chip. . Further, the second light emitting chips (211, 221, 231, 241) are alternately provided in the light emitting element columns (21, 22, 23, 24) in different rows (two different rows). In addition, the first light emitting chip (210, 220, 230, 240) and the second light emitting chip (211, 221, 231, 241) are separated from each other by a predetermined distance.

また、波長変換層３は、それぞれ、第１の発光チップ（２１０、２２０、２３０、２４０）を覆う。透光層４は、それぞれ、第２の発光チップ（２１１、２２１、２３１、２４１）を覆う。   The wavelength conversion layer 3 covers the first light emitting chips (210, 220, 230, 240), respectively. The light transmissive layer 4 covers the second light emitting chips (211, 221, 231, 241), respectively.

波長変換層３のうちの一つは、オレンジ色蛍光粉及びパッケージコロイドの混合３Ｏであり、これに対応する一つ第１の発光チップ（例えば、四列目の発光素子列２４のうちの３つ目の第１の発光チップ２４０）は、発光ピーク波長範囲が５９５〜６１０ｎｍの間に介在する投射光を発生するようになる。   One of the wavelength conversion layers 3 is a mixed 3O of orange fluorescent powder and package colloid, and one corresponding first light emitting chip (for example, 3 in the fourth light emitting element array 24). The first first light emitting chip 240) emits projection light having an emission peak wavelength range of 595 to 610 nm.

波長変換層３うちの別の一部は、緑色蛍光粉及びパッケージコロイドの混合３Ｇであり、これらに対応する一部の第１の発光チップ（例えば、一列目の発光素子列２１のうちの４つ目の第１の発光チップ２１０及び二列目の発光素子列２２うちの３つ目の第１の発光チップ２２０）は、発光ピーク波長範囲が「４８０〜４９５ｎｍの間」または「５２０〜５４０ｎｍの間」に介在する投射光を発生するようになる。   Another part of the wavelength conversion layer 3 is a mixture 3G of green fluorescent powder and package colloid, and a part of the first light emitting chips (for example, 4 in the first light emitting element array 21). The first first light-emitting chip 210 and the third first light-emitting chip 220 in the second light-emitting element array 22) have an emission peak wavelength range of “between 480 and 495 nm” or “520 to 540 nm. Projection light intervening “between” is generated.

波長変換層３うちのさらに別の一部は、黄色蛍光粉及びパッケージコロイドの混合３Ｙであり、これらに対応する一部の第１の発光チップ（例えば、一列目の発光素子列２１のうちの１つ目の第１の発光チップ２１０及び二列目の発光素子列２２のうちの３つ目の第１の発光チップ２２０）は、色温が「２８００〜７０００Ｋの間」または「７０００〜１１０００Ｋの間」に介在する投射光を発生するようになる。なお、前記黄色蛍光粉はオレンジ色及び緑色で混合した蛍光粉に切り替えても良く、該オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドの混合は、これに対応する第１の発光チップに、所定の色温を有する投射光を発生させる。   Still another part of the wavelength conversion layer 3 is a mixed 3Y of yellow fluorescent powder and package colloid, and a part of the first light emitting chips (for example, the first light emitting element array 21 in the first line) The first first light-emitting chip 210 and the third first light-emitting chip 220 in the second light-emitting element array 22 have a color temperature of “between 2800-7000K” or “7000-11000K”. Projection light intervening in between is generated. The yellow fluorescent powder may be switched to a fluorescent powder mixed in orange and green, and the mixture of the fluorescent powder mixed in orange and green and the package colloid is added to the corresponding first light emitting chip, Projection light having a predetermined color temperature is generated.

よって、第１の発光チップ（２１０、２２０、２３０、２４０）が発する可視光の一部は、波長変換層３により吸収されかつ他の発光ピーク波長範囲のある可視光に変換され、該他の発光ピーク波長範囲を有する可視光及び第２の発光チップ（２１１、２２１、２３１、２４１）が発生する投射光が、それぞれ光合成され、このアレイ型発光モジュール２は、演色性が９０〜９５の間に介在する白色光源を合成できるようになる。   Therefore, a part of visible light emitted from the first light emitting chip (210, 220, 230, 240) is absorbed by the wavelength conversion layer 3 and converted into visible light having another emission peak wavelength range. Visible light having a light emission peak wavelength range and projection light generated by the second light emitting chips (211, 221, 231, 241) are photo-combined, respectively. It becomes possible to synthesize a white light source interposed between the two.

しかしながら、第１の発光チップ（２１０、２２０、２３０、２４０）、及び第２の発光チップ（２１１、２２１、２３１、２４１）の配列の方式は、本発明を限定するものではない。いずれの、各列の発光素子列（２１、２２、２３、２４）が少なくとも一つの第２の発光チップ（２１１、２２１、２３１、２４１）を有し、かつ、波長変換層３は異なる割合の蛍光粉及びパッケージコロイドで混合して構成し、第１の発光チップ（２１０、２２０、２３０、２４０）をそれぞれ覆うものであれば、ともに本発明に保護される範囲である。   However, the arrangement of the first light emitting chips (210, 220, 230, 240) and the second light emitting chips (211 221 231 241) does not limit the present invention. Any one of the light emitting element rows (21, 22, 23, 24) of each row has at least one second light emitting chip (211, 221, 231, 241), and the wavelength conversion layer 3 has a different ratio. Any combination of fluorescent powder and package colloid that covers the first light emitting chip (210, 220, 230, 240) is within the scope protected by the present invention.

図３は、本実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の回路図である。図１及び図３に合せて示すように、このアレイ型発光モジュール２は、４列の発光素子列（２１、２２、２３、２４）からなり、各列の発光素子列は、３つの第１の発光チップ及び１つの第２の発光チップを有し、４×４のアレイ型発光モジュールを構成する。また、各列の発光素子列（２１、２２、２３、２４）は、それぞれ、基板１に並列して電気的に接続され、かつ、各列の発光素子列（２１、２２、２３、２４）の第１の発光チップ及び第２の発光チップは、それぞれ、基板１に直列に電気的に接続される。   FIG. 3 is a circuit diagram of an array type light-emitting device having a color rendering index according to the present embodiment. As shown in FIGS. 1 and 3, the array type light emitting module 2 includes four light emitting element rows (21, 22, 23, 24), and each light emitting element row includes three first light emitting element rows. The light emitting chip and one second light emitting chip are included to constitute a 4 × 4 array type light emitting module. The light emitting element rows (21, 22, 23, 24) in each row are electrically connected in parallel to the substrate 1, and the light emitting element rows (21, 22, 23, 24) in each row are respectively connected. The first light emitting chip and the second light emitting chip are each electrically connected in series to the substrate 1.

各第１の発光チップの電圧値範囲は、２．９〜４．０（Ｖ）の間に介在し、各第２の発光チップの電圧値範囲は、１．８〜２．８（Ｖ）の間に介在する。そのため、電気回路設計者は、異なる電圧値の第１の発光チップ及び第２の発光チップをあらゆる方式で組み合わせることができ、各列の発光素子列（２１、２２、２３、２４）の第１の発光チップ及び第２の発光チップは、それぞれ直列してなり総電圧値が約１２Ｖであるようになる。最適な場合に、各列の発光素子列の総電圧値が１２Ｖである。   The voltage value range of each first light emitting chip is interposed between 2.9 and 4.0 (V), and the voltage value range of each second light emitting chip is 1.8 to 2.8 (V). Intervene between. Therefore, the electric circuit designer can combine the first light emitting chip and the second light emitting chip having different voltage values in any manner, and the first light emitting element row (21, 22, 23, 24) of each row. The light emitting chip and the second light emitting chip are respectively connected in series so that the total voltage value is about 12V. In the optimum case, the total voltage value of the light emitting element rows in each row is 12V.

図４ａは、本発明の第１実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の第１実施例の発光チップのレイアウトを示す図である。図４ａの第１実施例について、以下に説明する。   FIG. 4a is a diagram illustrating a light emitting chip layout of a first example of an array type light-emitting device having a color rendering index according to the first embodiment of the present invention. The first embodiment of FIG. 4a will be described below.

Ｂ＋Ｐ（ＯＧ）は、「１つの青色発光ダイオードチップＢが、オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドとの混合Ｐ（ＯＧ）に組み合わせられる」ことを意味し、これによって、色温(colortemperature)が２８００〜７０００Ｋの間に介在する白色投射光を発生させる。   B + P (OG) means that "one blue light emitting diode chip B is combined with a mixture P (OG) of fluorescent powder mixed with orange and green and package colloid", thereby the color temperature (colortemperature). ) Generates white projection light interposed between 2800-7000K.

Ｂ＋Ｐ（Ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（Ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する緑色投射光を発生させる。   B + P (G) means that “one blue light emitting diode chip B is combined with a mixture P (G) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 520 to 540 nm. The green projection light interposed between them is generated.

Ｂ＋Ｐ（Ｏ）は、「１つの青色発光ダイオードチップＢが、オレンジ色蛍光粉とパッケージコロイドとの混合Ｐ（Ｏ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５９５〜６１０ｎｍであるオレンジ色投射光を発生させる。   B + P (O) means that “one blue light emitting diode chip B is combined with a mixture P (O) of orange fluorescent powder and package colloid”, which results in an emission peak wavelength range of 595 to 610 nm. The orange projection light is generated.

Ｒ＋Ｔは、「１つの赤色発光ダイオードチップＲが、透光層Ｔに合わせられる」ことを意味し、これによって、発光ピーク波長範囲が６２０〜６４０ｎｍである赤色投射光を発生させる。   R + T means that “one red light emitting diode chip R is aligned with the light transmitting layer T”, and thereby, red projection light having an emission peak wavelength range of 620 to 640 nm is generated.

この場合、青色発光ダイオードチップＢが発する可視光の一部は、異なる波長変換層（Ｐ（ＯＧ）、Ｐ（Ｇ）、Ｐ（Ｏ））によって吸収され他の発光ピーク波長範囲のある可視光に変換され、かつ、該他の発光ピーク波長範囲のある可視光が、赤色発光ダイオードチップＲが発生する投射光と互いに混合され、本発明の第1実施形態のアレイ型発光モジュールの第１実施例は、色温が２５００〜４０００Ｋの間に介在する高演色性の白色光を合成できるようになる。   In this case, part of the visible light emitted from the blue light-emitting diode chip B is absorbed by different wavelength conversion layers (P (OG), P (G), P (O)) and has a light emission peak wavelength range. In the first embodiment of the array type light emitting module according to the first embodiment of the present invention, the visible light having the other light emission peak wavelength range is mixed with the projection light generated by the red light emitting diode chip R. As an example, it becomes possible to synthesize white light with high color rendering properties having a color temperature between 2500 and 4000K.

図４ｂは、本発明の第１実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の第２実施例の発光チップのレイアウトを示す図である。図４ｂの第２実施例について、以下に説明する。   FIG. 4B is a diagram illustrating a light emitting chip layout of a second example of an array type light-emitting device having a color rendering index according to the first embodiment of the present invention. The second embodiment of FIG. 4b will be described below.

Ｂ＋Ｐ（ＯＧ）は、「１つの青色発光ダイオードチップＢが、オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドとの混合Ｐ（ＯＧ）に組み合わせられる」ことを意味し、これによって、色温(colortemperature)が２８００〜７０００Ｋの間に介在する白色投射光を発生させる。   B + P (OG) means that "one blue light emitting diode chip B is combined with a mixture P (OG) of fluorescent powder mixed with orange and green and package colloid", thereby the color temperature (colortemperature). ) Generates white projection light interposed between 2800-7000K.

Ｂ＋Ｐ（Ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（Ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する緑色投射光を発生させる。   B + P (G) means that “one blue light emitting diode chip B is combined with a mixture P (G) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 520 to 540 nm. The green projection light interposed between them is generated.

Ｂ＋Ｐ（ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が４８０〜４９５ｎｍの間に介在する緑色投射光を発生させる。   B + P (g) means that “one blue light emitting diode chip B is combined with a mixture P (g) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 480 to 495 nm. The green projection light interposed between them is generated.

Ｂ＋Ｐ（Ｏ）は、「１つの青色発光ダイオードチップＢが、オレンジ色蛍光粉とパッケージコロイドとの混合Ｐ（Ｏ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５９５〜６１０ｎｍであるオレンジ色投射光を発生させる。   B + P (O) means that “one blue light emitting diode chip B is combined with a mixture P (O) of orange fluorescent powder and package colloid”, which results in an emission peak wavelength range of 595 to 610 nm. The orange projection light is generated.

Ｒ＋Ｔは、「１つの赤色発光ダイオードチップＲが、透光層Ｔに合わせられる」ことを意味し、これによって、発光ピーク波長範囲が６２０〜６４０ｎｍである赤色投射光を発生させる。   R + T means that “one red light emitting diode chip R is aligned with the light transmitting layer T”, and thereby, red projection light having an emission peak wavelength range of 620 to 640 nm is generated.

この場合、青色発光ダイオードチップＢが発する可視光の一部は、異なる波長変換層（Ｐ（ＯＧ）、Ｐ（Ｇ）、Ｐ（ｇ）、Ｐ（Ｏ））によって吸収され他の発光ピーク波長範囲のある可視光に変換され、かつ、該他の発光ピーク波長範囲のある可視光が、赤色発光ダイオードチップＲが発生する投射光源と互いに混合され、本発明の第1実施形態のアレイ型発光モジュールの第２実施例は、色温が４０００〜６０００Ｋの間に介在する高演色性の白色光を合成できるようになる。   In this case, part of the visible light emitted from the blue light emitting diode chip B is absorbed by different wavelength conversion layers (P (OG), P (G), P (g), P (O)) and other emission peak wavelengths. The visible light having the range that is converted into visible light and having the other emission peak wavelength range is mixed with the projection light source generated by the red light emitting diode chip R, and the array type light emission of the first embodiment of the present invention The second embodiment of the module makes it possible to synthesize white light with high color rendering properties having a color temperature between 4000 and 6000K.

図４ｃは、本発明の第１実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の第３実施例の発光チップのレイアウトを示す図である。図４ｃの第３実施例について、以下に説明する。   FIG. 4c is a view illustrating a light emitting chip layout of a third example of an array type light-emitting device having a color rendering index according to the first embodiment of the present invention. The third embodiment of FIG. 4c will be described below.

Ｂ＋Ｐ（ＯＧ）は、「１つの青色発光ダイオードチップＢが、オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドとの混合Ｐ（ＯＧ）に組み合わせられる」ことを意味し、これによって、色温(colortemperature)が７０００〜１１０００Ｋの間に介在する白色投射光を発生させる。   B + P (OG) means that "one blue light emitting diode chip B is combined with a mixture P (OG) of fluorescent powder mixed with orange and green and package colloid", thereby the color temperature (colortemperature). ) Generates white projection light interposed between 7000-11000K.

Ｂ＋Ｐ（Ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（Ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する緑色投射光を発生させる。   B + P (G) means that “one blue light emitting diode chip B is combined with a mixture P (G) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 520 to 540 nm. The green projection light interposed between them is generated.

Ｂ＋Ｐ（ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が４８０〜４９５ｎｍの間に介在する緑色投射光を発生させる。   B + P (g) means that “one blue light emitting diode chip B is combined with a mixture P (g) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 480 to 495 nm. The green projection light interposed between them is generated.

Ｂ＋Ｐ（Ｏ）は、「１つの青色発光ダイオードチップＢが、オレンジ色蛍光粉とパッケージコロイドとの混合Ｐ（Ｏ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５９５〜６１０ｎｍであるオレンジ色投射光を発生させる。   B + P (O) means that “one blue light emitting diode chip B is combined with a mixture P (O) of orange fluorescent powder and package colloid”, which results in an emission peak wavelength range of 595 to 610 nm. The orange projection light is generated.

Ｒ＋Ｔは、「１つの赤色発光ダイオードチップＲが、透光層Ｔに合わせられる」ことを意味し、これによって、発光ピーク波長範囲が６２０〜６４０ｎｍである赤色投射光を発生させる。   R + T means that “one red light emitting diode chip R is aligned with the light transmitting layer T”, and thereby, red projection light having an emission peak wavelength range of 620 to 640 nm is generated.

この場合、青色発光ダイオードチップＢが発する可視光の一部は、異なる波長変換層（Ｐ（ＯＧ）、Ｐ（Ｇ）、Ｐ（ｇ）、Ｐ（Ｏ））によって吸収され他の発光ピーク波長範囲のある可視光に変換され、かつ、該他の発光ピーク波長範囲のある可視光が、赤色発光ダイオードチップＲが発生する投射光源と互いに混合され、本発明の第1実施形態に係るアレイ型発光モジュールの第３実施例は、色温が６０００〜９０００Ｋの間に介在する高演色性の白色光を合成できるようになる。   In this case, part of the visible light emitted from the blue light emitting diode chip B is absorbed by different wavelength conversion layers (P (OG), P (G), P (g), P (O)) and other emission peak wavelengths. The visible light having the range converted to visible light and the other light emission peak wavelength range is mixed with the projection light source generated by the red light emitting diode chip R, and the array type according to the first embodiment of the present invention The third embodiment of the light emitting module can synthesize white light with high color rendering properties with a color temperature between 6000 and 9000K.

図５及び図６は、それぞれ、本発明の第２実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の平面図、及び本発明の図５の６−６線の断面図である。図から分かるように、本発明の第２実施形態のアレイ型発光装置と、前記第１実施形態のアレイ型発光装置との最も大きな違いは、第２実施形態のアレイ型発光装置の基板１’が、それぞれ近接して配列される複数の収納溝（収納凹部）１０’を有し、かつ、アレイ型発光モジュール２’の各発光素子列（２１’、２２’、２３’、２４’）の第１の発光チップ（２１０、２２０、２３０、２４０）及び第２の発光チップ（２１１、２２１、２３１、２４１）が、それぞれ、対応する収納溝１０’内に収納されることである。   5 and 6 are a plan view of an array type light-emitting device having a color rendering index according to the second embodiment of the present invention, and FIG. 5 of the present invention, respectively. FIG. 6 is a sectional view taken along line 6-6. As can be seen from the figure, the biggest difference between the array type light emitting device of the second embodiment of the present invention and the array type light emitting device of the first embodiment is the substrate 1 ′ of the array type light emitting device of the second embodiment. Has a plurality of storage grooves (storage recesses) 10 ′ arranged close to each other, and each of the light emitting element rows (21 ′, 22 ′, 23 ′, 24 ′) of the array type light emitting module 2 ′. The first light emitting chip (210, 220, 230, 240) and the second light emitting chip (211, 221, 231, 241) are respectively housed in the corresponding housing grooves 10 ′.

図７ａ及び図７Ａは、本発明の第２実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の第１実施例の発光チップのレイアウトを示す図、及びスペクトル図である。図７ａの第１実施例について、以下に説明する。   7A and 7A are views showing a layout of a light emitting chip of a first example of an array type light-emitting device having a color rendering index according to a second embodiment of the present invention. And a spectrum diagram. The first embodiment of FIG. 7a is described below.

Ｂ＋Ｐ（ＯＧ）は、「１つの青色発光ダイオードチップＢが、オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドとの混合Ｐ（ＯＧ）に組み合わせられる」ことを意味し、これによって、色温(colortemperature)が２８００〜７０００Ｋの間に介在する白色投射光を発生させる。   B + P (OG) means that "one blue light emitting diode chip B is combined with a mixture P (OG) of fluorescent powder mixed with orange and green and package colloid", thereby the color temperature (colortemperature). ) Generates white projection light interposed between 2800-7000K.

Ｂ＋Ｐ（Ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（Ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する緑色投射光を発生させる。   B + P (G) means that “one blue light emitting diode chip B is combined with a mixture P (G) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 520 to 540 nm. The green projection light interposed between them is generated.

Ｂ＋Ｐ（Ｏ）は、「１つの青色発光ダイオードチップＢが、オレンジ色蛍光粉とパッケージコロイドとの混合Ｐ（Ｏ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５９５〜６１０ｎｍであるオレンジ色投射光を発生させる。   B + P (O) means that “one blue light emitting diode chip B is combined with a mixture P (O) of orange fluorescent powder and package colloid”, which results in an emission peak wavelength range of 595 to 610 nm. The orange projection light is generated.

Ｒ＋Ｔは、「１つの赤色発光ダイオードチップＲが、透光層Ｔに合わせられる」ことを意味し、これによって、発光ピーク波長範囲が６２０〜６４０ｎｍである赤色投射光を発生させる。   R + T means that “one red light emitting diode chip R is aligned with the light transmitting layer T”, and thereby, red projection light having an emission peak wavelength range of 620 to 640 nm is generated.

この場合、青色発光ダイオードチップＢが発する可視光の一部は、異なる波長変換層（Ｐ（ＯＧ）、Ｐ（Ｇ）、Ｐ（Ｏ））によって吸収され他の発光ピーク波長範囲のある可視光に変換され、かつ、該他の発光ピーク波長範囲のある可視光が、赤色発光ダイオードチップＲが発生する投射光源と互いに混合され、本実施形態に係る第１実施例のアレイ型発光モジュールは、演色性（ＣＲＩ）が９３．１６で、色温が２５００〜４０００Ｋの高演色性の白色光を合成できるようになる（図７Ａ参照）。   In this case, part of the visible light emitted from the blue light-emitting diode chip B is absorbed by different wavelength conversion layers (P (OG), P (G), P (O)) and has a light emission peak wavelength range. The visible light having the other emission peak wavelength range is mixed with the projection light source generated by the red light emitting diode chip R, and the array type light emitting module of the first example according to the present embodiment is High color rendering white light having a color rendering property (CRI) of 93.16 and a color temperature of 2500 to 4000 K can be synthesized (see FIG. 7A).

図７ｂ及び図７Ｂは、本発明の第２実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の第２実施例の発光チップのレイアウトを示す図、及びスペクトル図である。図７ｂの第２実施例について、以下に説明する。   FIGS. 7B and 7B are views showing a layout of a light emitting chip of a second example of an array type light-emitting device having a color rendering index according to a second embodiment of the present invention. And a spectrum diagram. The second embodiment of FIG. 7b will be described below.

Ｂ＋Ｐ（ＯＧ）は、「１つの青色発光ダイオードチップＢが、オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドとの混合Ｐ（ＯＧ）に組み合わせられる」ことを意味し、これによって、色温(colortemperature)が２８００〜７０００Ｋの間に介在する白色投射光を発生させる。   B + P (OG) means that "one blue light emitting diode chip B is combined with a mixture P (OG) of fluorescent powder mixed with orange and green and package colloid", thereby the color temperature (colortemperature). ) Generates white projection light interposed between 2800-7000K.

Ｂ＋Ｐ（Ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（Ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する緑色投射光を発生させる。   B + P (G) means that “one blue light emitting diode chip B is combined with a mixture P (G) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 520 to 540 nm. The green projection light interposed between them is generated.

Ｒ＋Ｔは、「１つの赤色発光ダイオードチップＲが、透光層Ｔに合わせられる」ことを意味し、これによって、発光ピーク波長範囲が６２０〜６４０ｎｍである赤色投射光を発生させる。   R + T means that “one red light emitting diode chip R is aligned with the light transmitting layer T”, and thereby, red projection light having an emission peak wavelength range of 620 to 640 nm is generated.

この場合、青色発光ダイオードチップＢが発する可視光の一部は、異なる波長変換層（Ｐ（ＯＧ）、Ｐ（Ｇ））によって吸収され他の発光ピーク波長範囲のある可視光に変換され、かつ、該他の発光ピーク波長範囲のある可視光が、赤色発光ダイオードチップＲが発生する投射光源と互いに混合され、本実施形態に係る第２実施例のアレイ型発光モジュールは、演色性（ＣＲＩ）が９０．４６で、色温が４０００〜６０００Ｋの高演色性の白色光を合成できるようになる（図７Ｂ参照）。   In this case, part of the visible light emitted from the blue light-emitting diode chip B is absorbed by different wavelength conversion layers (P (OG), P (G)) and converted into visible light having another emission peak wavelength range, and The visible light having the other emission peak wavelength range is mixed with the projection light source generated by the red light emitting diode chip R, and the array type light emitting module of the second example according to the present embodiment has a color rendering property (CRI). Is 90.46, and high color rendering white light having a color temperature of 4000 to 6000K can be synthesized (see FIG. 7B).

図７ｃ及び図７Ｃは、本発明の第２実施形態に係る高演色性(color rendering index)のあるアレイ型発光装置(array typelight-emitting device)の第３実施例の発光チップのレイアウトを示す図、及びスペクトル図である。図７ｃの第３実施例について、以下に説明する。   FIGS. 7c and 7C are views showing a layout of a light emitting chip of a third example of an array type light-emitting device having a color rendering index according to the second embodiment of the present invention. And a spectrum diagram. A third embodiment of FIG. 7c will be described below.

Ｂ＋Ｐ（ＯＧ）は、「１つの青色発光ダイオードチップＢが、オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドとの混合Ｐ（ＯＧ）に組み合わせられる」ことを意味し、これによって、色温(colortemperature)が７０００〜１１０００Ｋの間に介在する白色投射光を発生させる。   B + P (OG) means that "one blue light emitting diode chip B is combined with a mixture P (OG) of fluorescent powder mixed with orange and green and package colloid", thereby the color temperature (colortemperature). ) Generates white projection light interposed between 7000-11000K.

Ｂ＋Ｐ（Ｇ）は、「１つの青色発光ダイオードチップＢが、緑色蛍光粉とパッケージコロイドとの混合Ｐ（Ｇ）に組み合わせられる」ことを意味し、これによって、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する緑色投射光を発生させる。   B + P (G) means that “one blue light emitting diode chip B is combined with a mixture P (G) of green fluorescent powder and package colloid”, and thus the emission peak wavelength range is 520 to 540 nm. The green projection light interposed between them is generated.

Ｒ＋Ｔは、「１つの赤色発光ダイオードチップＲが、透光層Ｔに合わせられる」ことを意味し、これによって、発光ピーク波長範囲が６２０〜６４０ｎｍである赤色投射光を発生させる。   R + T means that “one red light emitting diode chip R is aligned with the light transmitting layer T”, and thereby, red projection light having an emission peak wavelength range of 620 to 640 nm is generated.

この場合、青色発光ダイオードチップＢが発する可視光の一部は、異なる波長変換層（Ｐ（ＯＧ）、Ｐ（Ｇ））によって吸収され他の発光ピーク波長範囲のある可視光に変換され、かつ、該他の発光ピーク波長範囲のある可視光が、赤色発光ダイオードチップＲが発生する投射光源と互いに混合され、本実施形態に係る第３実施例のアレイ型発光モジュールは、色温が２５００〜４０００Ｋの高演色性の白色光を合成できるようになる（図７Ｃ参照）。   In this case, part of the visible light emitted from the blue light-emitting diode chip B is absorbed by different wavelength conversion layers (P (OG), P (G)) and converted into visible light having another emission peak wavelength range, and The visible light having the other emission peak wavelength range is mixed with the projection light source generated by the red light emitting diode chip R, and the array type light emitting module of the third example according to this embodiment has a color temperature of 2500 to 4000K. It becomes possible to synthesize white light with high color rendering properties (see FIG. 7C).

以上のように、本発明の特徴は、各列の発光素子列が複数の青色発光ダイオードチップ及び少なくとも一つの赤色発光ダイオードチップを有することにある。さらに、波長変換層うちの一部は、緑色蛍光粉とパッケージコロイドの混合で、これらに対応する第１の発光チップは、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する投射光を発生するようになり、さらに、波長変換層の他一部は、オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドの混合であり、これらに対応する他の一部の第１の発光チップは所定の色温の投射光を発生するようになる。また、第２の発光チップは、それぞれ、異なる行の発光素子列に交互に設けられる。よって、アレイ型発光モジュールは、演色性が９０〜９５の間に介在する白色光源を合成できるようになる。   As described above, a feature of the present invention is that each light emitting element row includes a plurality of blue light emitting diode chips and at least one red light emitting diode chip. Furthermore, a part of the wavelength conversion layer is a mixture of green fluorescent powder and package colloid, and the corresponding first light emitting chip generates projection light intervening between 520 to 540 nm in emission peak wavelength range. Furthermore, the other part of the wavelength conversion layer is a mixture of fluorescent powder mixed with orange and green and package colloid, and the other part of the first light emitting chips corresponding thereto has a predetermined color temperature. Projecting light is generated. In addition, the second light emitting chips are alternately provided in the light emitting element columns in different rows. Therefore, the array type light emitting module can synthesize a white light source having a color rendering property between 90 and 95.

しかし、前記の説明は、単に本発明の好ましい具体的な実施例の詳細説明及び図面に過ぎず、本発明の特許請求の範囲を局限するものではなく、本発明の主張する範囲は、特許請求の範囲に基づくべきであり、いずれの当該分野における通常の知識を有する専門家が本発明の分野の中で、適当に変更や修飾などを実施できるが、それらの実施のことが本発明の主張範囲内に納入されるべきことは言うまでもないことである。   However, the foregoing description is merely a detailed description of the preferred specific embodiments and drawings of the present invention, and is not intended to limit the scope of the claims of the present invention. Any expert having ordinary knowledge in the field can make appropriate changes or modifications within the field of the present invention. It goes without saying that it should be delivered within the scope.

図１は、本発明の第１実施形態に係る高演色性のあるアレイ型発光装置の平面図である。FIG. 1 is a plan view of an array type light emitting device having high color rendering properties according to the first embodiment of the present invention. 図２は、図１の２−２線の断面図である。2 is a cross-sectional view taken along line 2-2 of FIG. 図３は、本発明の第１実施形態に係る高演色性のあるアレイ型発光装置がの回路図である。FIG. 3 is a circuit diagram of the array type light emitting device having high color rendering properties according to the first embodiment of the present invention. 図４ａは、本発明の第１実施形態に係る高演色性のあるアレイ型発光装置の第１実施例の発光チップのレイアウトを示す図である。FIG. 4A is a diagram illustrating a layout of light emitting chips of a first example of an array type light emitting device having high color rendering properties according to the first embodiment of the present invention. 図４ｂは、本発明の第１実施形態に係る高演色性のあるアレイ型発光装置の第２実施例の発光チップのレイアウトを示す図である。FIG. 4B is a diagram illustrating a layout of the light emitting chip of the second example of the array type light emitting device with high color rendering according to the first embodiment of the present invention. 図４ｃは、本発明の第１実施形態に係る高演色性のあるアレイ型発光装置の第３実施例の発光チップのレイアウトを示す図である。FIG. 4C is a view showing a layout of light emitting chips of a third example of the array type light emitting device with high color rendering according to the first embodiment of the present invention. 図５は、本発明の第２実施形態に係る高演色性のあるアレイ型発光装置の平面図である。FIG. 5 is a plan view of an array type light emitting device having high color rendering properties according to the second embodiment of the present invention. 図６は、図５の６−６線の断面図である。6 is a cross-sectional view taken along line 6-6 of FIG. 図７ａは、本発明の第２実施形態に係る高演色性のあるアレイ型発光装置の第１実施例の発光チップのレイアウトを示す図である。FIG. 7A is a diagram illustrating a layout of light emitting chips of a first example of an array type light emitting device having high color rendering properties according to a second embodiment of the present invention. 図７Ａは、本発明の第２実施形態に係る高演色性のあるアレイ型発光装置の第１実施例のスペクトル図である。FIG. 7A is a spectrum diagram of the first example of the array-type light emitting device having high color rendering properties according to the second embodiment of the present invention. 図７ｂは、本発明の第２実施形態に係る高演色性のあるアレイ型発光装置の第２実施例の発光チップのレイアウトを示す図である。FIG. 7B is a diagram illustrating a light emitting chip layout of a second example of the array type light emitting device having high color rendering properties according to the second embodiment of the present invention. 図７Ｂは、本発明の第２実施形態に係る高演色性のあるアレイ型発光装置の第２実施例のスペクトル図である。FIG. 7B is a spectrum diagram of the second example of the array-type light emitting device having high color rendering properties according to the second embodiment of the present invention. 図７ｃは、本発明の第２実施形態に係る高演色性のあるアレイ型発光装置の第３実施例の発光チップのレイアウトを示す図である。FIG. 7c is a diagram illustrating a layout of light emitting chips of a third example of the array type light emitting device having high color rendering properties according to the second embodiment of the present invention. 図７Ｃは、本発明の第２実施形態に係る高演色性のあるアレイ型発光装置の第３実施例のスペクトル図である。FIG. 7C is a spectrum diagram of the third example of the array-type light emitting device having high color rendering properties according to the second embodiment of the present invention.

符号の説明Explanation of symbols

１、１’ 基板
２ アレイ型発光モジュール
２１ 発光素子列
２１０ 第１の発光チップ
２１１ 第２の発光チップ
２２ 発光素子列
２２０ 第１の発光チップ
２２１ 第２の発光チップ
２３ 発光素子列
２３０ 第１の発光チップ
２３１ 第２の発光チップ
２４ 発光素子列
２４０ 第１の発光チップ
２４１ 第２の発光チップ
２’ アレイ型発光モジュール
２１’ 発光素子列
２２’ 発光素子列
２３’ 発光素子列
２４’ 発光素子列
３ 波長変換層
３Ｏ オレンジ色蛍光粉とパッケージコロイドとの混合
３Ｇ 緑色蛍光粉とパッケージコロイドとの混合
３Ｙ 黄色蛍光粉とパッケージコロイドとの混合
４ 透光層
Ｂ 青色発光ダイオードチップ
Ｒ 赤色発光ダイオードチップ
Ｔ 透光層
Ｐ（ＯＧ） オレンジ色及び緑色で混合した蛍光粉とパッケージコロイドとの混合
Ｐ（Ｇ） 緑色蛍光粉とパッケージコロイドとの混合
Ｐ（Ｏ） オレンジ色蛍光粉とパッケージコロイドとの混合 1, 1 ′ substrate 2 array type light emitting module 21 light emitting element array 210 first light emitting chip 211 second light emitting chip 22 light emitting element array 220 first light emitting chip 221 second light emitting chip 23 light emitting element array 230 first Light emitting chip 231 Second light emitting chip 24 Light emitting element row 240 First light emitting chip 241 Second light emitting chip 2 'Array type light emitting module 21' Light emitting element row 22 'Light emitting element row 23' Light emitting element row 24 'Light emitting element row 3 Wavelength conversion layer 3O Mixing of orange fluorescent powder and package colloid 3G Mixing of green fluorescent powder and package colloid 3Y Mixing of yellow fluorescent powder and package colloid 4 Translucent layer B Blue light emitting diode chip R Red light emitting diode chip T Translucent layer P (OG) The fluorescent powder mixed with orange and green and the package colloid Mixing P (G) Mixing of green fluorescent powder and package colloid P (O) Mixing of orange fluorescent powder and package colloid

Claims (15)

基板と、
前記基板に電気的に接続され、複数列の発光素子列からなり、各列の発光素子列は、発光波長範囲が４５０〜４６０ｎｍの間に介在する複数の第１の発光チップと、発光波長範囲が６２０〜６４０ｎｍの間に介在する少なくとも一つの第２の発光チップとを備えたアレイ型発光モジュールと、
前記第１の発光チップをそれぞれ覆う複数の波長変換層であって、該波長変換層のうちの一部は、緑色蛍光粉及びパッケージコロイドの混合であり、これらに対応する前記第１の発光チップは、発光ピーク波長範囲が５２０〜５４０ｎｍの間に介在する投射光を発生するようになり、さらに、該波長変換層の他一部は、黄色蛍光粉とパッケージコロイドの混合であり、これらに対応する前記第１の発光チップは、所定の色温のある投射光を発生するようになる、複数の波長変換層と、
前記第２の発光チップを覆う複数の透光層セットとを含み、
前記第１の発光チップが発する可視光の一部は、前記波長変換層により吸収され、かつ他の発光ピーク波長範囲のある可視光に変換され、該他の発光ピーク波長範囲を有する可視光及び前記第２の発光チップが発生する投射光は、それぞれ光合成され、これにより、演色性が９０〜９５の間に介在する白色光を合成できることを特徴とする高演色性のあるアレイ型発光装置。 A substrate,
A plurality of light emitting element rows electrically connected to the substrate, each light emitting element row including a plurality of first light emitting chips interposed between a light emission wavelength range of 450 to 460 nm and a light emission wavelength range An at least one second light emitting chip interposed between 620 and 640 nm,
A plurality of wavelength conversion layers respectively covering the first light emitting chip, wherein a part of the wavelength conversion layer is a mixture of green fluorescent powder and package colloid, and the first light emitting chip corresponding thereto Emits projection light with an emission peak wavelength range between 520 and 540 nm, and the other part of the wavelength conversion layer is a mixture of yellow fluorescent powder and package colloid, which corresponds to these The first light emitting chip that generates projection light having a predetermined color temperature, and a plurality of wavelength conversion layers,
A plurality of translucent layer sets covering the second light emitting chip,
A part of visible light emitted by the first light emitting chip is absorbed by the wavelength conversion layer and converted into visible light having another emission peak wavelength range, and visible light having the other emission peak wavelength range and The projection light generated by the second light emitting chip is photo-combined, whereby white light intervening between 90 to 95 can be synthesized. 前記第１の発光チップは、青色発光ダイオードチップで、前記第２の発光チップは赤色発光ダイオードチップであることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The array type light emitting device with high color rendering properties according to claim 1, wherein the first light emitting chip is a blue light emitting diode chip and the second light emitting chip is a red light emitting diode chip. 前記第２の発光チップは、それぞれ、異なる行の発光素子列に交互に設けられることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The array type light emitting device with high color rendering properties according to claim 1, wherein the second light emitting chips are alternately provided in light emitting element columns in different rows. 前記所定の色温は、２８００〜１１０００Ｋの間であることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The array type light emitting device with high color rendering properties according to claim 1, wherein the predetermined color temperature is between 2800 and 11000K. 前記黄色蛍光粉は、オレンジ色蛍光粉と緑色蛍光粉とを混合してなることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The array type light emitting device with high color rendering properties according to claim 1, wherein the yellow fluorescent powder is a mixture of orange fluorescent powder and green fluorescent powder. 前記波長変換層のうちの一つは、オレンジ色蛍光粉とパッケージコロイドとの混合であり、これに対応する前記第１の発光チップは、発光ピーク波長範囲が５９５〜６１０の間に介在される投射光を発生させることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   One of the wavelength conversion layers is a mixture of orange fluorescent powder and package colloid, and the first light emitting chip corresponding thereto has an emission peak wavelength range between 595 and 610. 2. An array type light emitting device having high color rendering properties according to claim 1, wherein projection light is generated. 前記波長変換層のうちのさらに他の一部は、緑色蛍光粉とパッケージコロイドとの混合で、これらに対応する前記第１の発光チップは、発光ピーク波長範囲が４８０〜４９５の間に介在される投射光を発生させることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   Still another part of the wavelength conversion layer is a mixture of green fluorescent powder and package colloid, and the first light emitting chip corresponding thereto has a light emission peak wavelength range between 480 and 495. 2. An array type light emitting device having high color rendering properties according to claim 1, wherein projection light is generated. 前記波長変換層は、異なる割合で蛍光粉とパッケージコロイドとを混合してなることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The array type light emitting device with high color rendering properties according to claim 1, wherein the wavelength conversion layer is formed by mixing fluorescent powder and package colloid at different ratios. 前記各列の発光素子列は、それぞれ、前記基板に並列して電気的に接続されることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The array type light emitting device with high color rendering properties according to claim 1, wherein the light emitting element rows of each row are electrically connected in parallel to the substrate. 前記各列の発光素子列の前記第１の発光チップ及び第２の発光チップは、それぞれ、前記基板に直列して電気的に接続されることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The high color rendering property according to claim 1, wherein the first light emitting chip and the second light emitting chip of each light emitting element row are electrically connected in series to the substrate. An array type light emitting device. 前記アレイ型発光モジュールは、４列の発光素子列からなり、各列の発光素子列は、３つの第１の発光チップ及び一つの第２の発光チップを有し、４×４のアレイ型発光モジュールを構成することを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   The array type light emitting module includes four light emitting element rows, and each light emitting element row includes three first light emitting chips and one second light emitting chip, and 4 × 4 array type light emitting. 2. The array type light emitting device having high color rendering properties according to claim 1, wherein the module constitutes a module. 前記各第１の発光チップの電圧値範囲は、２．９〜４．０（Ｖ）の間に介在し、かつ、前記各第２の発光チップの電圧値範囲は、１．８〜２．８（Ｖ）の間に介在することを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   The voltage value range of each of the first light emitting chips is interposed between 2.9 and 4.0 (V), and the voltage value range of each of the second light emitting chips is 1.8 to 2. The array type light emitting device having high color rendering properties according to claim 1, wherein the array type light emitting device is interposed between 8 (V). 各列の発光素子列の総電圧値が１２Ｖであることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   2. The array type light emitting device with high color rendering properties according to claim 1, wherein the total voltage value of the light emitting element rows in each row is 12V. 前記第１の発光チップ及び前記第２の発光チップは、それぞれ、所定距離、隔てられていることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   The array type light emitting device with high color rendering properties according to claim 1, wherein the first light emitting chip and the second light emitting chip are separated from each other by a predetermined distance. 前記基板は、それぞれ近接して配列される複数の収納溝を有し、前記第１の発光チップ及び前記第２の発光チップは、それぞれ、対応する前記収納溝内に収納されることを特徴とする請求項１記載の高演色性のあるアレイ型発光装置。   The substrate has a plurality of storage grooves arranged close to each other, and the first light emitting chip and the second light emitting chip are respectively stored in the corresponding storage grooves. The array type light emitting device having high color rendering properties according to claim 1.
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