TW200912531A - Radiation-sensitive resin composition, layer insulation film and microlens and manufacture method thereof - Google Patents

Abstract

The invention relates to a radiosensitive resin combination, which contains [A] polymer and [B] 1,2-diazido quinone compound. The [A] polymer has the following groups: at least one group selected from carboxyl and carboxylic acid anhydride group, at least one group selected from epoxy ethyl and oxygen heterocyclic ring butyl, and n+/- group expressed by the following formula (1), (in formula (1), R is methene, alkylidene with 2 to 10 carbon atoms or alkyl methene; Y is single bond, -CO-, -O-CO-* (wherein, the connecting bond with * is bonded with the R), n is an integer from 2 to 10, X is n+/- alkyl with one or a plurality of ether linkages and 2 to 70 carbon atoms, and + expresses a connecting bond).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation sensitive linear resin composition, an interlayer insulating film, and a microlens, and a method of manufacturing the same. [Prior Art] For electronic components such as a thin film transistor (hereinafter referred to as "TFT") type liquid crystal display element, a magnetic head element, an integrated circuit element, and a solid-state imaging element, interlayers are generally provided for insulating between wirings arranged in a layered manner. Insulating film. It is preferable that the material for forming the interlayer insulating film has a small number of steps for producing a desired pattern shape, and that it has sufficient flatness, so that a sensitive radiation linear resin composition can be widely used (refer to JP-A-200 1 -3). Japanese Patent Publication No. 54822 and JP-A No. 2001-343743). In the above electronic component, for example, a TFT-type liquid crystal display device is manufactured by forming a transparent electrode film on the interlayer insulating film and forming a liquid crystal alignment film thereon, and therefore, the interlayer insulating film is in the step of forming a transparent electrode film. It is in a high temperature condition or in a stripping solution for the photoresist used to form the pattern of the electrodes, and therefore must have sufficient durability for these cases. In recent years, the trend of the TFT-type liquid crystal display device is to increase the screen size, increase the brightness, high definition, high-speed response, and thinning. The composition for forming the interlayer insulating film must have high sensitivity and form an interlayer insulating film. The low dielectric constant, high transmittance, etc. must be superior to the high performance of the past. In addition, a facsimile machine, an electronic photocopier, a solid-state imaging device, or the like, an on-chip color filter imaging optical system or an optical connector material of a fiber-optic connector on a wafer-5-200912531 uses a lens having a size of 3 to ΙΟΟμη Diameter microlenses, or microlens arrays of these microlenses in a regular arrangement. When a microlens or a microlens array is formed, a photoresist pattern corresponding to a lens is formed, and then melted and flowed by heat treatment, and a method of using the lens as a lens or a lens pattern of a molten flow is formed into a mask. A method of transferring a lens shape onto a substrate by dry etching is known. In the case of forming the above-mentioned lens pattern, a sensitive radiation linear resin composition is widely used (refer to Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. After the supply of the insulating film on the bonding pad of the wiring forming portion, the planarizing film and the etching photoresist film are applied, and the etching is performed by using the desired mask to remove the etching light of the bonding pad portion. The step of removing the planarization film and the various insulating films by etching to expose the bonding pad portion. Therefore, the microlens or microlens array requires solvent resistance and heat resistance in the steps of forming the planarizing film and etching the photoresist film and the etching step. The sensitive radiation linear resin composition for forming such a microlens must have high sensitivity, and the microlens formed of the composition has a desired half of the bending rate, and must have high heat resistance, high transmittance, and the like. In the development step of forming the interlayer insulating film or the microlens prepared as described above, when the development time slightly exceeds the optimum time, the developer penetrates between the pattern and the substrate, and peeling easily occurs. Therefore, development must be strictly controlled. Time, there is a problem with product yield. -6- 200912531 When the interlayer insulating film or microlens is formed of the sensitive radiation linear resin composition, the composition is required to have high sensitivity, and in the developing step of the forming step, the development time does not exceed the set time. Pattern peeling will occur, indicating good adhesion, and the interlayer insulating film formed by the composition is required to have high heat resistance, high solvent resistance, low dielectric constant, high transmittance, and microlenses are required when forming a microlens. It has a good melt shape (required bend radius), high heat resistance, high solvent resistance, and high transmittance. However, the radiation-sensitive linear resin composition satisfying such a demand has not been known in the past. [Disclosure of the Invention] The present invention has been made in view of the above problems. SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a radiation sensitive linear resin composition having a high-sensitivity radiation sensitivity and easily forming a pattern-like film excellent in heat resistance. Another object of the present invention is to provide an interlayer insulating film which can form a high heat resistance, a high solvent resistance, a high transmittance, and a low dielectric property when forming an interlayer insulating film, and can also have an interlayer insulating film for forming a microlens. A radiation sensitive linear resin composition of a microlens having a high transmittance and a good melt shape. Another object of the present invention is to provide a method of forming an interlayer insulating film and a microlens using the above-described radiation sensitive linear resin composition. Another object of the present invention is to provide an interlayer insulating film having various properties such as high heat resistance, high solvent resistance, low dielectric constant, and high permeability, and a molten shape which exhibits good heat resistance and high solvent resistance. Microlenses with various characteristics such as high transmittance 200912531. Other objects and advantages of the present invention will be apparent from the description. According to the present invention, the object and the advantages of the present invention are achieved by the following photosensitive radiation linear resin composition. The composition contains: [A] a group selected from at least one of a group consisting of a carboxyl group and a carboxylic anhydride group. a group selected from at least one of an epoxy group and an oxocyclobutyl group, and a polymer having a y-valent group represented by the following formula (1) (hereinafter referred to as "polymer [A]" X - ( -Y-rJ-S-+ ) (1) (In the formula (1), r1 is a methyl group or a C 2~1〇 alkyl or alkyl methyl group, a Y single bond, -CO-, -Ο-co-* (but with the "*" link and R1) or -NHCO' (but with the "*" link and R1), η is an integer from 2 to 1' X An n-valent hydrocarbon group having 2 or 70 carbon atoms of one or more ether bonds, or η is 3, and χ is a trivalent group represented by the following formula (2), and "+" represents a linking bond,

(In the formula (2), R11 is independently a methyl group or a carbon number of 2 to 6 - 8 - 200912531. The alkyl group "*" is a linkage bond) and [B] a 1,2-anthracene stack. Nitrogen compounds. The object and the advantages of the present invention are attained by the following method for forming an interlayer insulating film or a microlens, which comprises the following steps in the following order: (1) forming a radiation sensitive linear resin composition on the substrate a step of coating the film, (2) a step of irradiating at least a portion of the coating film with radiation, (3) a developing step, and (4) a heating step. The object and advantage of the present invention are attained by the third interlayer insulating film or microlens formed by the above method. BEST MODE FOR CARRYING OUT THE INVENTION The sensitive radiation linear resin composition of the present invention will be described in detail below. Polymer [A] The polymer [A] is a group containing at least one selected from the group consisting of a fluorenyl group and a carboxylic acid anhydride group, and a group selected from at least one of an epoxy group and an oxocyclobutyl group. The polymer of the above formula (〇 represents the n-valent group. The alkylene group having 2 to 10 carbon atoms of R1 of the above formula (1) is preferably a carbon number of 2 to 6 and preferably a carbon number of 2 to 6. a linear alkyl group of 6 or a group represented by the following formula (3): CH3 __R111 - CH * (3) -9- 200912531 (in the formula (3), 'Ri] 1 is a methyl group or a carbon number The linear alkyl group of 2 to 4 is attached with a "*" bond and the S bond). The alkyl group having a carbon number of 2 to 10 of the rule 1 is preferably a group represented by the following formula (4). —CH—(4) Y of the above formula (1) is preferably -0-C0-* (but the "*" linkage is added to R1). The η of the above formula (1) is preferably 2~ An integer of 8 is more preferably an integer of 2 to 6 or 8, more preferably 2, 3, 4, 6, or 8. In the above formula (1), when η is 2, X is, for example, a carbon number of 2 to 1 Å. a linear or branched alkyl group, the following formula (5)

(In the formula (5), the RIV systems are each independently an integer of a hydrogen atom or a methyl group 'ml series 1 to 20, and each of the "*" indicates a bond bond). The following formula (6) -10- 200912531

CH 2 •CH2 - Φ—C2H5 (6)

CH 2 (in the formula (6), "*" indicates a linkage bond), such as a trivalent group or the like. * ^ 4, 6 or 8 X is, for example, the following formula (7). This CH2 * - ch2-c — ch2 The r ^ , . , 戊 0~2 integer ''*' each means a polymer such as a 4, 6 or 8 valence group represented by a C (7), 1«2 1糸υ bond). The content of at least one selected from the group consisting of a residue and a group of citrate hepatic groups is preferably ο·1 to 10 mmol/g, more preferably 〇·5 to 5 mm〇1/g. The content of at least one of the polymers [A] selected from the group consisting of epoxyethyl and oxocyclobutyl groups is preferably ο·1 to 10 mm 〇i/g, more preferably 1 to 5 mm 〇l. /g. The content of the n-valent represented by the above formula (1) is preferably 0.005 to 1 mmol/g, more preferably 〇·〇1 to 〇.5 mmol/g. The styrene-equivalent weight average molecular weight (hereinafter referred to as "Mw") of the polymer [A] is preferably 2 x 10 〇 3 to l x l 〇 5, more preferably 5 χ 1 〇 3 to 5 x l 〇 4. Ch2

-CH2 - CH - CH2 - F CH;

CH m2 2 (7) -11 - 200912531

When the Mw is less than 2x10, the image forming tolerance is insufficient, the residual film ratio of the obtained film is lowered, or the resulting interlayer insulating film or microlens has a pattern shape and heat resistance. When Mw exceeds lxio5, sometimes the sensitivity will drop or the shape of the pattern will be poor. Further, the molecular weight distribution (hereinafter referred to as "Mw/Mn") of the polymer [A] defined by 所得 M ( (the polystyrene-equivalent number average molecular weight) is preferably 5.0 or less, more preferably 4 〇. the following. When the M w / Mn exceeds 5 _ 0, the resulting interlayer insulating film or microlens has a poor pattern shape. The radiation sensitive linear resin composition containing the above polymer [A] does not cause development residue upon development, and can easily form a predetermined pattern shape. The polymer [A] can be any as long as it is the above polymer. The method obtained, for example, (a 1 ) is at least one selected from the group consisting of unsaturated decanoic acid and unsaturated phthalic anhydride (hereinafter referred to as "compound (a)"), and (a2) contains at least one selected from the group consisting of epoxy An unsaturated compound formed by an unsaturated group of an ethyl group and an oxocyclobutyl group (hereinafter referred to as "compound (a2)") is represented by the following formula (8) X-fY-R-SH (8) A polymer obtained by radical copolymerization in the presence of a compound represented by the formula (8), wherein each of X, Y, Ri, and η are synonymous with χ, Y, Ri, and η of the above formula. The compound (a 1 ) is at least one selected from the group consisting of a radically polymerizable unsaturated carboxylic acid and an unsaturated phthalic anhydride, for example, a single residual acid, a diindole-12-200912531 acid, a dicarboxylic anhydride, a polycarboxylic acid. An acid mono((meth)acryloxyalkylene) ester, a mono(meth)acrylate having a polymer having a carboxyl group and a hydroxyl group at both terminals, a polycyclic compound having a carboxyl group, an anhydride thereof, and the like. Specific examples of such a monocarboxylic acid include acrylic acid, methacrylic acid, crotonic acid, etc.; and dicarboxylic acids such as maleic acid, trans-butenedioic acid, citraconic acid, mesaconic acid, itaconic acid, etc. The dicarboxylic acid anhydride is, for example, an anhydride of the compound exemplified above as the dicarboxylic acid; a mono [(meth) propylene decyloxyalkyl] ester of a polycarboxylic acid such as succinic acid mono [2-(methyl) propylene]; a methoxyethyl ester, a mono [2-(methyl) propylene methoxyethyl] phthalate, etc.; a mono(meth) acrylate having a polymer having a carboxyl group and a hydroxyl group at both terminals, for example, ω -carboxypolycaprolactone mono(meth)acrylate or the like; a polycyclic compound having a carboxyl group and an anhydride thereof, for example, 5-carboxybicyclo[2.2.1]hept-2-ene, 5,6-dimercaptobicyclo [2.2.1] Hept-2-ene ' 5-nonyl-5-methylbicyclo[2.2.1]hept-2-ene, 5-carboxy-5-ethylbicyclo[2.2.1]hept-2- Storage, 5-resyl-6-methylbicyclo[2.2.1]hept-2-pyrrol, 5-carboxy-6-ethylbicyclo[2.2.1]hept-2-ene, 5,6-dicarboxybicyclo [2.2.1] Hept-2-ene anhydride and the like. Among these, from the viewpoints of copolymerization reactivity, solubility in an aqueous alkali solution, and ease of use, it is preferred to use an anhydride of a single residual acid or a dicarboxylic acid, particularly acrylic acid, methacrylic acid or maleic anhydride. These compounds (a 1 ) can be used singly or in combination. The compound (a2) has an unsaturated compound selected from the group consisting of at least one group of a radical polymerizable epoxy-13-200912531 group and an oxocyclobutyl group. The epoxy group-containing unsaturated compound may, for example, glycidyl acrylate, glycidyl methacrylate, α-ethyl methacrylate glycerin, α-n-propyl acrylate glycidyl ester, α-n-butyl acrylate glycidol Ester, 3,4-epoxybutyl acrylate, 3,4-epoxybutyl methacrylate, -6,7-epoxyheptyl acrylate, -6,7-epoxyheptyl methacrylate, Acrylic _ 3,4-epoxycyclohexyl ester, 3,4-epoxycyclohexyl methacrylate, _ 3,4-epoxycyclohexylmethyl acrylate, methacrylic acid-3,4-epoxy ring Hexylmethyl ester, α-ethylpropionic acid-6,7-epoxyheptyl ester, oxime-ethyl benzyl-2,3-epoxypropyl ether, m-vinylbenzyl-2,3-ring Oxypropyl ether, ρ-vinylbenzyl-2,3-epoxypropyl ether, etc., wherein glycidyl methacrylate, _3,4-epoxycyclohexylmethyl methacrylate, methacrylic acid -6, 7_epoxyheptyl ester, fluorenyl-vinylbenzyl-2,3-epoxypropyl ether, m-vinylbenzyl-2,3-epoxypropyl ether, ρ-vinylbenzyl-2,3- The copolymerization reactivity of the glycidyl ether or the like and the improvement of the heat resistance of the resulting interlayer insulating film or microlens 'surface The aspect of hardness is preferred. An unsaturated compound having an oxycyclobutyl group, for example, 3-(propenyloxymethyl)oxycyclobutane, 3-(acryloxymethyl)-3-methyloxycyclobutane, 3-( Propylene methoxymethyl)_3_ethyloxycyclobutane, 3-(acryloxymethyl)-2-trifluoromethyloxetane, 3-(acryloxymethyl)-2 - pentafluoroethyloxycyclobutane, 3-(acryloxymethyl)-2-phenyloxycyclobutane, 3-(acryloxymethyl)_2,2-difluorooxocyclobutane , 3-(propyl oxalyloxymethyl)_2,2,4-difluorooxetane, 3-(propyl oxymethyl)-2,2,4,4-tetrafluorooxane Alkane, 3-(2-propenyloxyethyl)oxetane, 3-(2-propionateoxyethyl)-2-ethyloxetane, -14 - 200912531 3- ( 2 - propylene methoxyethyl)-3-ethyloxocyclobutane, bis(2-acetoxyethyl)-2-trifluoromethyloxetane' 3- (2_acryloxy) 2-pentafluoroethyloxycyclobutane, 3-(2-propenyloxyethyl)_2_phenyloxetane, 3-(2-propionyloxyethyl)_2, 2-difluorooxetane, 3_(2_propylene methoxyethyl)_2,2,4-trifluorooxetane, 3_( 2_ propylene oxiranyl ethyl)-2,2,4,4-tetrafluorooxocyclobutane, 2_(propyl decyloxymethyl) oxetane, 2-(propyl decyloxymethyl) _2_methyloxocyclobutane, 2-(acryloxymethyl)-3-ethyloxocyclobutane, 2-(propenyloxymethyl)-2-trifluoromethylcyclobutane, 2_(Propyleneoxymethyl)-2-pentafluoroethyloxycyclobutane, 2-(propylene methoxymethyl)-2-phenyloxycyclobutane, 2-(propylene methoxymethyl) -2,2-difluorooxocyclobutane, 2-(acryloxymethyl)-2,2,4-trifluorooxocyclobutane, 2-(acryloxymethyl)-2, 2,4,4-tetrafluorooxocyclobutane, 2-(2-propenyloxyethyl)oxycyclobutane, 2-(2-propenyloxyethyl)-2-ethyloxetane Alkane, 2-(2-propenyloxyethyl)-3-ethyloxycyclobutane, 2-(2-propenyloxyethyl)-2-trifluoromethyloxycyclobutane, 2- (2-propenyloxyethyl)-2-pentafluoroethyloxycyclobutane, 2-(2-propenyloxyethyl)-2-phenyloxycyclobutane, 2-(2-propene醯oxyethyl)-2,2-difluorooxocyclobutane, 2-(2-propyleneoxyethyl)-2,2,4-trifluorooxocyclobutane, 2_(2_ propylene oxime Acrylate such as ethyl)-2,2,4,4-tetrafluorooxocyclobutane; 3-(methacryloxymethyl)oxycyclobutane, 3-(methacryloxycarbonyl) Methyloxycyclobutane, 3-(methacryloxymethyl)-3-ethyloxycyclobutane, 3-(methacryloxymethyl)_2·trifluoromethyloxy Cyclobutane, 3-(methacryloxymethyl)-2-pentafluoroethyloxy-15- 200912531 cyclobutane, 3-(methacryloxymethyl)-2-phenyloxy Cyclobutane, 3-(methacryloxymethyl)-2,2-difluorooxocyclobutane, 3-(methacryloxymethyl)-2,2,4-trifluoroox Cyclobutane, 3-(methacryloxymethyl)-2,2,4,4-tetrafluorooxocyclobutane, 3-(2-methylpropenyloxyethyl)oxycyclobutane , 3-(2-methylpropenyloxyethyl)-2-ethyloxocyclobutane, 3-(2-methylpropenyloxyethyl)-3-ethyloxocyclobutane, 3 - (2-Methylpropenyloxyethyl)-2-trifluoromethyloxycyclobutane, 3-(2-methylpropenyloxyethyl)-2-pentafluoroethyloxycyclobutane , 3-(2-methacryloxyethyl)-2-phenyloxycyclobutane, 3-(2-methylpropene oxime Ethyl)-2,2-difluorooxocyclobutane, 3-(2-methylpropenyloxyethyl)-2,2,4-trifluorooxocyclobutane, 3-(2-methyl Propylene methoxyethyl)-2,2,4,4-tetrafluorooxocyclobutane, 2-(methacryloxymethyl)oxycyclobutane, 2-(methacryloxyloxymethyl) 2-methyloxycyclobutane, 2-(methacryloxymethyl)-3-ethyloxycyclobutane, 2-(methacryloxymethyl)-2-tri Fluoromethyloxycyclobutane, 2-(methacryloxymethyl)-2-pentafluoroethyloxycyclobutane, 2-(methacryloxymethyl)-2-phenyloxy Cyclobutane, 3-(methacryloxymethyl)-2,2-difluorooxocyclobutane, 2-(methacryloxymethyl)-2,2,4-trifluoroox Cyclobutane, 2-(methacryloxymethyl)-2,2,4,4-tetrafluorooxocyclobutane, 2-(2-methylpropenyloxyethyl)oxycyclobutane, 2-(2-Methylacryloxyethyl)-2-ethyloxocyclobutane, 2-(2-methylpropenyloxyethyl)-3-ethyloxocyclobutane, 2- (2-methylpropenyloxyethyl)-2-trifluoromethyloxycyclobutane, 2-(2-methylpropenyloxyethyl)-2-pentafluoroethyloxycyclobutane , 2-(2-methylpropenyloxyethyl)-2-phenyloxycyclobutane-16- 200912531 alkane, 2-(2-methylpropenyloxyethyl)-2,2-difluoro Oxycyclobutane, 2-(2-methylpropenyloxyethyl)-2,2,4-trifluorooxocyclobutane, 2-(2-methylpropenyloxyethyl)-2, A methacrylate such as 2,4,4-tetrafluorooxocyclobutane or the like. Among these, from the viewpoint of copolymerization reactivity, 3-(acryloxymethyl)oxycyclobutane, 3-(acryloxymethyl) 3-methyloxetane, 3 is preferably used. -(propylene methoxymethyl)-3-ethyloxycyclobutane, 3-(methacryloxymethyl)oxycyclobutane, 3-(methacryloxymethyl)-3 - methyloxycyclobutane, 3-(methacryloxymethyl)-3-ethyloxycyclobutane, and the like. These compounds (a2) can be used singly or in combination. The polymer [A] may be a copolymer containing only the unsaturated compound of the compound (a 1 ) and the compound (a2), or the compound (a 1 ) and the compound (a2), and the ruthenium (a3) compound (al) A copolymer of an unsaturated compound formed by an unsaturated compound other than the compound (a2) (hereinafter sometimes referred to as "the compound (a3)"). The compound (a3) is not particularly limited as long as it is a radical polymerizable unsaturated compound other than the compound (a1) or the compound (a2). The compound (a3) is, for example, an alkyl methacrylate, an alkyl acrylate, a cyclic alkyl methacrylate, a methacrylate having a hydroxyl group, a cyclic alkyl acrylate, an aryl methacrylate, an aromatic vinegar, and an unsaturated group. Di-residual acid diacetate, bicyclic unsaturated compound, maleimide compound, unsaturated aromatic compound, conjugated diene; phenolic hydroxyl group-containing unsaturated compound represented by the following formula (I); having tetrahydrofuran A skeleton, a furan skeleton, a tetrahydropyran skeleton, a pyran-17-200912531 skeleton or an unsaturated compound of the skeleton represented by the following formula (II) and an unsaturated compound thereof.

, B series

R (In the formula (I), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R2 is the same or different in a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 4 carbon atoms, -COO- or -CONH -, m is an integer from 〇 to 3, but at least one of 晏R' is a hydroxyl group)

(II) (R7-based hydrogen atom or methyl group in the formula (II)) Preferred specific examples of the compound (a3), wherein the methyl keto acid graft ester such as methyl methacrylate or ethyl methyl group Acrylate, n-butyl methacrylate, second butyl methacrylate, tert-butyl methacrylate, 2-ethylhexyl methacrylate, isodecyl methacrylate, n-lauryl methacrylate, Tridecyl methacrylate, yoke 18 - 200912531 methacrylate, etc.; alkyl acrylate such as methacrylate, isopropyl acrylate, etc.; alkyl methacrylate such as cyclohexyl Methacrylate, 2-methylcyclohexyl methacrylate, tricyclo [5.2.1_02.6] decane-8-yl methacrylate, tricyclo [5.2.1.02.6] decane-8 - Ethoxyethyl methacrylate, isobornyl methacrylate, etc.; methacrylate having a hydroxyl group such as methylol methacrylate, 2-hydroxyethyl acrylate, 3-hydroxypropylmethyl Acrylate, 4-hydroxybutyl methacrylate, diethylene glycol monomethacrylate, 2, 3-dihydroxypropyl methacrylate, 2-methacryloxyethyl glycoside, 4-hydroxyphenyl methacrylate, etc.; cyclic alkyl acrylate such as cyclohexyl acrylate, 2-methylcyclohexyl Acrylate, tricyclo[5_2.1_〇2.6]decane I acrylate, tricyclo[5.2.1.02·6]癸垸-8-yloxyethyl acrylate vinegar, isobornyl acrylate Etc.; methyl propyl sulphuric acid vinegar such as benzyl propyl acrylate, benzyl propyl acrylate, etc.; aryl acrylate, etc.; diethyl acrylate, diethyl fumarate aryl acrylate, for example Phenyl acrylate, unsaturated dicarboxylic acid diester such as maleic acid, diethyl itaconate, etc.; bicyclic unsaturated compounds such as bicyclo [2.2.1] heptane 2 _, 5 methyl bicyclo [2.2. 1]hept-2-ene, 5-ethylbicyclo[221]hept-2-ene, 5-methoxybicyclo[2_2_1]hept-2-ene'5-ethoxybicyclo[2 2 ι]g- 2-ene, 5,6-dimethoxybicyclo[2.2.丨]hept-2-ene, diethoxy-19-200912531 bisbicyclo[2.2.1]hept-2-ene,5-butoxy Carbonylbicyclo[2.2.1]hept-2-ene, 5-cyclohexyloxycarbonylbicyclo[2.2.1 Hept-2-ene, 5-phenoxycarbonylbicyclo[2.2.1]hept-2-ene, 5,6-bis(t-butoxycarbonyl)bicyclo[2.2.1]hept-2-ene, 5 ,6-bis(cyclohexyloxycarbonyl)bicyclo[2.2.1]hept-2-ene, 5-(2,-hydroxyethyl)bicyclo[2.2.1]hept-2-ene, 5,6-di Hydroxybicyclo[2.2.1]hept-2-ene, 5,6-bis(hydroxymethyl)bicyclo[2.2.1]hept-2-ene, 5,6-bis(2'-hydroxymethyl)bicyclo[ 2.2.1] hept-2-ene, 5-hydroxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-ethylbicyclo[2.2.1]hept-2-ene, 5-hydroxymethyl-5-methylbicyclo[2.2.1]hept-2-ene; etc.; maleimide compound such as N-phenyl maleimide, N-cyclohexyl cis Equinone imine, N-benzyl maleimide, N-(4-hydroxyphenyl) maleimide, N-(4-hydroxybenzyl)butylene Amine, N-succinimide-3-oxenimide benzoate, N-succinimide-4-butyleneimine butyrate, N-amber Amino-6-m-butyleneimine hexanoate, N-succinimide-3-oxenimide propionate, N- (9- Pyridyl) maleimide, etc. » unsaturated aromatic compounds such as styrene, α-methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxy a conjugated diene such as 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene or the like; and a phenol represented by the above formula (I) The unsaturated compound of the skeleton is, for example, a compound represented by the following formula (1-1) to (1-5); -20- 200912531 R1 Ο

HN \(CH2)n

.R2 R5^V^R3 R4 (In the formula (I-l), n is an integer from 1 to 3, and R1, R2, R3, R4, R5 and R6 are the same as in the formula (I))

R5^^j^^R3 R4 (In the formula (1-2), the definitions of R1, R2, R3, R4, R5 and R6 are the same as those of the above formula (I)) -21 - 200912531 R1

Ο , (CH2)n R6\^\^R2 (1-3 ) R5/^V^R3 R4 (in the formula (1-3), n is an integer from 1 to 3. R1, R2, R3 'R4, R5 And R6 is defined as in the above formula (I)) (Bu 4) R4 (in the formula (1-4), R1, R2, R3, R4, R5 and R6 are the same as defined in the above formula (I)) 22 - 200912531

R6\^Yr2 r5^^V^^r3 R4 (In the formula (1-5), R1, R2, R3, R4' R5 and R6 are the same as defined in the above formula (I)) An unsaturated compound having a tetrahydrofuran skeleton For example, tetrahydroindenyl (meth) acrylate, 2-(methyl) propyl methoxy-propionic acid tetrahydrofurfuryl ester, 3-(methyl) propyl decyloxytetrahydrofuran-2- ketone, etc.; The unsaturated compound of the skeleton is, for example, 2-methyl-5-(3-furyl)-1-penten-3-one 'mercapto (meth) acrylate, 1-furan-2-butyl-3- En-2-one, 1-furan-2-butyl-3-methoxy-3-en-2-one, 6-(2-furyl)-2-methyl-1-hexene-3- Ketone, 6-furan-2-yl-hex-1-en-3-one, 2-furan-2-yl-1-methyl-ethyl (meth)acrylate, 6-(2-furanyl)- 6-Methyl-1-hepten-3-one or the like; an unsaturated compound having a tetrahydropyran skeleton, for example, (tetrahydropyran-2-yl)methyl (meth) acrylate, 2, 6 -Dimethyl-8-(tetrahydropyran-2-yloxy)-oct-1-en-3-one, 2-hydropyran-2-yl (meth)acrylate, 1-( Tetrahydropyran-2-oxo)-butyl-3-en-2-one, etc.; examples of unsaturated compounds having a pyran skeleton 4-(1,4-Dioxa-5-oxo-6-heptyl)-6-methyl-2-indolyl, 4-(1,5-monooxindole-6-oxygen -7-octenyl)-6-methyl-2-pyranone; -23- 200912531 The unsaturation of the skeleton represented by the above formula (π) is polyethylene glycol (n = 2 to 10) Mono (meth) acrylate (n = 2~1 〇) mono (meth) acrylate, etc.; other unsaturated compounds such as acrylonitrile, methyl propyl ethoxide, chlorinated chlorinated, acrylamide, Methyl acrylamide, 4-propenyloxymorpholine, 4-methylpropenyloxyl Rf Among these, alkyl methacrylate, cyclic alkyl ester, cyclic alkyl acrylate are preferably used. a maleimide saturated aromatic compound or a conjugated diene; the phenolic hydroxyl group-containing unsaturated group represented by the above formula (I) does not have a tetrahydrofuran skeleton, a furan skeleton, a tetrahydropyran skeleton or the above formula (II) From the viewpoint of the unsaturated compound reactivity of the skeleton and the solubility in an aqueous alkali solution, a third butyl methacrylate, a tricyclo [5.2.1 · 〇 2'6] acrylate, a lauryl methyl group is preferred. Acrylate, armor Polyethylene glycol having a repeating number of 2 to 10, such as oxymethylcyclohexyl acrylate, fluorene-phenylmethyleneimine, maleimide, and tetrahydroindenyl (meth) acrylate Mono(methyl)propenylbenzyl (meth) acrylate, 4-hydroxyphenyl (methyl) 4-hydroxyphenyl (meth) acrylamide, o-hydroxy styrene, alkene, α-methyl- P-hydroxystyrene,: 1,3 -butadiene, 4-propanoid, 4-methylpropenyloxymorpholine, 3-(methyl)propan-2-one, 1-(tetrahydropyridyl) ··2_oxy)-butyl-3_ene_2. 3,5-dimethyl-4-trabenzylidene)methacrylamide. Compounds such as, for example, polypropylene glycol, nitrile, chlorinated, vinyl acetate, and the like. a methacrylic compound, a non-chelate; a skeleton, a pyran, copolymerized from styrene, cetan-8-ylmethylstyrene, 2-, fluorene-cyclohexyl, ethylene unit acid ester, 4-hydroxy acrylate, P-hydroxystyrene oxiranyloxytetrahydrofuran-one or hydrazine-(-24-200912531 These compounds (a3) may be used singly or in combination. The copolymer [A] used in the present invention is based on the compound (al). And the combination of the repeating units derived from (a2) and (a3), the constituent unit derived from the compound (al) preferably contains 5 to 40% by weight, and particularly preferably contains 5 to 25% by weight. When the copolymer is less than 5% by weight of the copolymer, it is difficult to dissolve in the aqueous alkali solution in the developing step, and the copolymer having more than 40% by weight tends to have excessive solubility in the aqueous alkali solution. The compound [A] is preferably composed of the compound (a2), and the constituent unit derived from the compound (a2) is contained in an amount of from 1 to 80% by weight based on the total of the repeating units derived from the compounds (al), (a2) and (a3). Good contains 30 to 80% by weight. This constituent unit is not up to When the content is 10% by weight, the heat resistance, surface hardness, and peeling resistance of the obtained interlayer insulating film or microlens tend to decrease, and when the amount of the constituent unit exceeds 80% by weight, the storage of the sensitive radiation linear resin composition The stability is lowered. The copolymer [A] used in the present invention is derived from the compound (a3) in accordance with the total of the repeating units derived from the compounds (al), (a2) and (a3). The unit preferably contains from 1 to 8 % by weight, particularly preferably from 15 to 60% by weight. A preferred embodiment of the copolymer [A] used in the present invention is a combination of unsaturated compounds such as methacrylic acid/ Tricyclo [5.2 · 1.0 2,6]decane-8-yl methacrylate / 4-propenyl methoxy morpholine / benzyl methacrylate / styrene, methacrylic acid / glycidyl methacrylate /N-cyclohexylmethyleneimine /(3-ethyloxycyclobutane-3-yl)methacrylate / cardiomethyl-p-hydroxystyrene, methacrylic acid / glycidyl methacrylate Ester /!^Benzene-25- 200912531 cis-butenylenediamine/tetrahydrofurfuryl methacrylate/vinyl Benzyl 2,3_epoxypropyl ether, styrene/methacrylic acid/glycidyl methacrylate/N-(4-hydroxyphenyl)methacrylamide/1,3-butadiene, benzene Ethylene/methacrylic acid/glycidyl methacrylate/(3-ethyloxycyclobutane-3-yl)methacrylate/tricyclo[5·2·1·〇2'6]decane-8 -Methyl methacrylate, methacrylic acid / glycidyl methacrylate / tricyclo [5.2.1. 〇 2,6] decane-8-yl methacrylate / hydrazine - cyclohexyl maleic acid Imine/η-lauryl methacrylate/α-methyl-p-hydroxystyrene, methacrylic acid/glycidyl methacrylate/styrene/2-methylcyclohexyl acrylate/1-(tetrahydrogen) Pyran-2-oxo)-butyl-3-en-2-one/4-hydroxybenzyl methacrylate, methacrylic acid/tricyclo[5.2.1.0''6]nonane-8-ylmethyl Acrylate/2-methylcyclohexyl acrylate / Ν-(3,5-dimethyl-4-hydroxybenzyl)methacrylamide and the like. The polymer [A] is, for example, a mixture of the above unsaturated compounds in the presence of a compound represented by the above formula (8) (hereinafter referred to as "polythiol compound"), preferably in a suitable solvent. In the presence of a starter, radical polymerization is carried out to synthesize. The above polythiol compound is a component having a chain transfer agent function when the polymer [A] is synthesized. As the polyvalent thiol compound, for example, an ester compound of a hydrothiocarboxylic acid and a polyhydric alcohol can be used. The above-mentioned hydrothiocarboxylic acid is, for example, mercaptoacetic acid, 3-hydrothiopropylpropionic acid, 3-hydrothiobutyric acid, 3-hydrothiovaleric acid or the like; and the polyhydric alcohol is, for example, ethylene glycol or tetraethylene glycol. Butanediol, trimethylolpropane-26-200912531 alkane, pentaerythritol, dipentaerythritol, tripentaerythritol, 1,3,5-tris(2-hydroxyethyl) cyanurate, sorbitol, and the like. Specific examples of preferred polythiol compounds for use in the present invention, such as trimethylolpropane (3-hydrothiopropionate), pentaerythritol tetrakis(3-hydrothiopropionate), tetraethylene glycol (3) -Hexylthiopropionate), dipentaerythritol (3-hydrothiopropionate), pentaerythritol tetrakis (hydrothioacetate), 1,4-bis(3-hydrothiobutoxy)butyl Alkane, pentaerythritol tetrakis(3-hydrothiobutyrate), 1,3,5-tris(3-hydrothiobutoxy)-l.,3,5-triazine-2,4,6 (1Η , 3Η, 5Η)-trione and so on. The above polythiol compound may be used singly or in combination of two or more. The ratio of the polythiol compound used in the synthesis of the polymer [A] is preferably from 0.5 to 30 parts by weight, more preferably from 1 to 20 parts by weight, particularly preferably from 1.5 to 10 parts by weight based on 100 parts by weight of the total unsaturated compound. Parts by weight. When the ratio of use of the polythiol compound is less than 0.5 part by weight, the molecular weight adjustment may not be sufficiently performed. On the other hand, when it exceeds 30 parts by weight, it is difficult to obtain a comparative polymerization conversion ratio. As the polymerization initiator used for the production of the polymer [A], a radical polymerization initiator can be generally used. For example 2,2'-azobisisobutyronitrile, 2,2, azobis(2,4-dimethylvaleronitrile), 2,2'-azobis-(4-methoxy-2 Azo compound such as 4-dimethylvaleronitrile; benzhydryl peroxide, lauryl peroxide, t-butyl peroxy valerate, 1,1,-bis-(third Butyl peroxide, an organic peroxide of hexamidine, and ammonia peroxide. When a peroxide is used as a radical polymerization initiator, a peroxide can also be used as a redox type initiator together with a reducing agent. -27- 200912531 The use ratio of the polymerization initiator is preferably from 0.1 to 50 parts by weight, more preferably from 0.1 to 20 parts by weight, based on 100 parts by weight of the total unsaturated compound. Solvents used in the production, for example, alcohols, ethers, glycol ethers, ethylene glycol alkyl ether acetates, diethylene glycol, propylene glycol monoalkyl ethers, propylene glycol alkyl ether acetates, propylene glycol alkyl ether propionates, Aromatic hydrocarbons, ketones, esters, and the like. In these specific examples, 'the above alcohol is, for example, methanol, ethanol, benzyl alcohol, 2-phenylethanol, 3-phenyl-1-propanol or the like; an ether such as tetrahydrofuran or the like; a glycol ether such as ethylene glycol monomethyl Ether, ethylene glycol monoethyl ether, etc.; ethylene glycol alkyl ether acetate such as methyl glycol ether acetate, ethyl glycol ether acetate, ethylene glycol monobutyl ether acetate, B a diol monoethyl ether acetate or the like; a diethylene glycol ether such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diglyme, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, etc.; Monoalkyl ethers such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, etc.; propylene glycol alkyl ether propionate such as propylene glycol methyl ether propionate, propylene glycol diethyl ether propionate, propylene glycol propyl ether propionate , propylene glycol butyl ether propionate, etc.; propylene glycol monoalkyl ether acetate such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, etc.; a hydrocarbon such as toluene, xylene, etc.; -28- 200912531 a ketone such as methyl ethyl ketone, Ester, such as ketone, 4-hydroxy-4-methyl-2-pentanone, etc., such as methyl acetate, ethyl acetate, propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, 2-hydroxy-2- Methyl methyl propionate, ethyl 2-hydroxy-2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl glycolate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate , 3 - hydroxypropyl propionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate, methyl 2-hydroxy-3-methylbutanoate, methoxyacetic acid Methyl ester, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate Ester, methyl propoxyacetate, ethyl propoxyacetate, propyl propoxyacetate, butyl propoxyacetate, methyl butoxyacetate, ethyl butoxyacetate, propyl butoxyacetate , butyl butoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, butyl 2-methoxypropionate, 2- Methyl ethoxypropionate, 2-ethoxypropionic acid Ethyl ester, propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, 2-butoxypropionic acid Propyl ester, butyl 2-butoxypropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, 3-methoxypropionic acid Butyl ester, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, 3-propoxypropionic acid Methyl ester, ethyl 3-propoxypropionate, propyl 3-propoxypropionate, butyl 3-propoxypropionate, methyl 3-butoxypropionate, 3-butoxypropionic acid An ester of ethyl ester, propyl 3-butoxypropionate, butyl 3-butoxypropionate or the like. Preferred among them are ethylene glycol alkyl ether acetate, diethylene glycol, propylene glycol mono-29-200912531 alkyl ether or propylene glycol alkyl ether acetate, and particularly preferably diethylene glycol diethylene glycol ethyl methyl ether. Propylene glycol methyl ether, propylene glycol diethyl ether, malonate or methyl 3-methoxypropionate. The polymerization temperature is 0 to 150 ° C, preferably 50 to 120 Torr, and the polymerization is preferably 10 minutes to 20 hours, more preferably 30 minutes to 6 hours, the above compound (a 1 ) and the compound (a2) and The polymerization reaction of the unsaturated compound formed of the content (a3) is preferably 90% by weight or more, more preferably 93% by weight or more, and still more preferably 1% by weight or more. The polymerization conversion ratio herein means the ratio of the weight of the polymerization reaction product [A] to the weight of the compound (a1) (a2) and the compound (a3) to be supplied to the polymerization reaction, and the polymerization initiator and the chain transfer meter. When the polymerization conversion ratio is within the above range, the solution containing the polymer [A] obtained by the polymerization is not purified and supplied to the preparation of the photosensitive resin composition, and the film produced by heating when the coating film is formed can be minimized, and the sensitivity is not affected. The radiation of the linear resin composition and the heat resistance of the obtained interlayer insulating film or microlens are preferred, and the unsaturated compound formed by the above compound (al) and the compound (a2) and preferably the content (a3) is preferred. The polymerization reaction is carried out in the presence of the above-mentioned alcohol compound, and the above-mentioned excellent effects of the preferred polymerized polythiol compound can be easily obtained. [B] Component The component [B] used in the present invention is irradiated with radiation to produce methyl ether, and the methyl ether is combined with a polymerization polymerization of 95. The polymerization reaction of the compound reduces the radiation sensation. c> has a compound polysulfide rate. A 1,2-quinonediazide compound in which a human first produces a carboxylic acid-30-200912531, and a phenolic compound or an alcoholic compound (hereinafter referred to as "mother core") and 1,2-naphthoquinonediazide may be used. A condensate of a sulfonic acid halide. The above-mentioned mother nucleus is, for example, trihydroxybenzophenone, tetrahydroxybenzophenone, pentahydroxybenzophenone, hexahydroxybenzophenone, (polyhydroxyphenyl)alkane, or other mother nucleus. Specific examples of these, wherein the trihydroxybenzophenone is, for example, 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone or the like; and tetrahydroxybenzophenone has, for example, 2 , 2',4,4'-tetrahydroxybenzophenone, 2,3,4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2, 3,4,2'-tetrahydroxy-4'-methylbenzophenone' 2,3,4,4'-tetrahydroxy-3'-methoxybenzophenone; etc.; pentahydroxybenzophenone For example, 2,3,4,2',6'-pentahydroxybenzophenone, etc.; hexahydroxybenzophenone such as 2,4,6,3',4',5'-hexahydroxybenzophenone, 3,4,5,3',4',5'-hexahydroxybenzophenone, etc.; (polyhydroxyphenyl)alkane such as bis(2,4-dihydroxyphenyl)methane, bis(p-hydroxybenzene) Methane, tris(p-phenyl)methane, 1,1,1-tris(p-hydroxyphenyl)ethane, bis(2,3,4-trihydroxyphenyl)methane, 2,2-double (2,3,4-trihydroxyphenyl)propane, 1,1,3-tris(2,5-dimethyl-4-hydroxyphenyl)-3-phenylpropane, 4,4'-[ 1 -[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol, 4,4',4"-sub-B Trisphenol 'bis(2,5-dimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane, 3,3,3',3'-tetramethyl-1,1'-spirobifluorene- 5,6,7,5',6',7'-hexanol, 2,2,4-trimethyl-7,2',4'-trihydroxyflavan, etc.; -31 - 200912531 Other cores For example, 2-methyl-2-(2,4-dihydroxyphenyl)-4-(4-hydroxyphenyl)-7-hydroxychroman, 2-[double{(5-isopropyl-4-hydroxy) - 2 -methyl)phenyl}methyl], i-[l-(3-{l-(4-hydroxyphenyl)-1-methylethyl}-4,6-dihydroxyphenyl)- 1-methylethyl]-3-(1-(3-{ 1-(4-hydroxyphenyl)-1-methylethyl}-4,6-dihydroxyphenyl)-1-methylethyl Benzo, 4,6-bis{ 1-(4-propionylphenyl)·1-methylethyl}-1,3-dihydroxybenzene. It is also possible to use the ester bond of the above-exemplified parent core. 1,2-naphthoquinone diazidosulfonate decylamine which is a guanamine bond, for example, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid decylamine Among these, the parent nucleus is preferably 2,3,4,4'-tetrahydroxybenzophenone, 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1 -Methylethyl]phenyl]heptylene]bisphenol, 4,4',4"-ethylidenetriol. Further, the 1,2-naphthoquinonediazidesulfonic acid halide is preferably 1,2-naphthoquinonediazidesulfonic acid chloride, and its specific example is 1,2-naphthoquinonediazide-4-sulfonic acid chloride. And 1,2-naphthoquinonediazide-5-sulfonic acid chloride, of which 1,2-naphthoquinonediazide-5-sulfonic acid chloride is preferably used. The condensation reaction is preferably a molar amount of from 3 to 85 mol%, more preferably from 50 to 70 mol%, based on the molar number of the mercapto compound in the phenolic compound or the alcohol compound. Naphthoquinonediazidesulfonic acid halide. The condensation reaction can be carried out using a known method. These [Β] components can be used individually or in combination of 2 or more types. The proportion of the component used in the [Β] is 5 to 100 parts by weight, more preferably 1 to 5 parts by weight, based on 100 parts by weight of the polymer [A]. When the ratio of [B] to -32 to 200912531 is less than 5 parts by weight, the difference in solubility between the irradiated portion and the unirradiated portion of the radiation of the aqueous alkali solution serving as the developing solution is small, and the patterning may be difficult. The resulting interlayer insulating film or microlens has poor heat resistance or solvent resistance. Further, when the ratio of the component [B] exceeds 100 parts by weight, the solubility in the above-mentioned aqueous alkali solution in the irradiated portion of the radiation is poor, and development is difficult. Other components The sensitive radiation linear resin composition of the present invention contains the above-mentioned polymers [A] and [B] as essential components, but may contain [C] a thermosensitive acid generating compound if necessary, and [D] has at least one ethylenic property. A polymerizable compound having an unsaturated double bond, an epoxy resin other than the [E] polymer [A], a [F] surfactant, and a [G] a secondary auxiliary agent. However, the sensitive radiation linear resin composition of the present invention contains a solution supply of the polymer [A] obtained by the polymerization of the compound (al) and the compound (a2) and preferably the unsaturated compound containing the compound (a3). When the linear radiation-sensitive resin composition is prepared, the compound (a1) and the compound (a2) which are not contained in the solution and which remain in the composition together with the polymer [A] are contained in the composition containing no unreacted unsaturated compound. Any one or more of the compounds (a3) is preferred. The above [C] thermosensitive acid generating compound can be used to improve the heat resistance or hardness of the obtained interlayer insulating film or microlens. Specific examples thereof include iron salts of sulfonium salts, benzothiazole key salts, ammonium salts, rust salts and the like. Specific examples of the above phosphonium salt include an alkyl phosphonium salt, a benzyl phosphonium salt, a dibenzyl phosphonium salt, a substituted benzyl phosphonium salt and the like. -33- 200912531 Specific examples of the alkyl sulfonium salt include 4-ethyl decyl phenyl dimethyl hexafluoroantimonate, 4-ethyl methoxy phenyl dimethyl hexafluoro arsenate, Dimethyl-4-(benzyloxycarbonyloxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-(benzylideneoxy)phenylphosphonium hexafluoroantimonate, dimethyl-4 -(benzylideneoxy)phenylphosphonium hexafluoroarsenate, dimethyl-3-chloro-4-ethenyloxyphenylphosphonium hexafluoroantimonate, etc.; benzyl sulfonium salt, for example, benzyl- 4-hydroxyphenylmethylhydrazine hexafluoroantimonate, benzyl-4-hydroxyphenylmethylphosphonium hexafluorophosphate, 4-ethoxycarbonylphenylbenzylmethylphosphonium hexafluoroantimonate, benzyl 4-methoxyphenylmethylhydrazine hexafluoroantimonate, benzyl-2-methyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, benzyl-3-chloro-4-hydroxyl Phenylmethyl hydrazine hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphenylmethyl sulfonium hexafluorophosphate, etc.; dibenzyl sulfonium salt such as dibenzyl-4-hydroxyphenyl fluorene Fluoroantimonate, dibenzyl-4-perylene, hexamethylene benzoate, 4-benzyloxyphenyl-fluorenyl hexafluoroantimonate, dibenzyl-4-methoxyphenylphosphonium hexafluoroantimonate Salt, dibenzyl-3-chloro 4-Hydroxyphenylphosphonium hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5-t-butylphenylphosphonium hexafluoroantimonate, benzyl-4-methoxybenzyl a 4-benzylphenylphosphonium hexafluorophosphate or the like; a substituted benzyl sulfonium salt such as p-chlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, p-nitrobenzyl-4-hydroxyphenyl Methyl hydrazine hexafluoroantimonate, p-chlorobenzyl-4-hydroxyphenylmethyl sulfonium hexafluorophosphate, p-nitrobenzyl-3-methyl-4-hydroxyphenylmethyl hexafluoroantimonic acid Salt, 3,5-dichlorobenzyl-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, o-chlorobenzyl-3-chloro-4-hydroxyphenylmethylphosphonium hexafluoroantimonate, and the like. Specific examples of the above benzothiazole salt are 3-benzylbenzothiazole iron hexafluoro-34-200912531 citrate, 3-benzylbenzothiazole hexafluorophosphate, 3-benzylbenzothiazole key four Fluoroborate, 3-(p-methoxybenzyl)benzothiazole gun hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazole hexafluoroantimonate, 3-benzyl -Benzylbenzothiazole iron such as 5-chlorobenzothiazole hexafluoroantimonate. Among these, it is preferred to use a sulfonium salt and a benzothiazole gun, particularly 4-ethyl methoxy ethoxy dimethyl hexafluoro arsenate, benzyl-4-hydroxyphenyl methyl hexafluoroantimonic acid. Salt, 4-ethoxycarbonylphenylbenzylmethyl hexafluoroantimonate, dibenzyl-4-hydroxyphenylphosphonium hexafluoroantimonate, 4-ethyloxyphenylbenzylphosphonium hexafluorophosphate Citrate, 3-benzylbenzothiazole gun hexafluoroantimonate. These commercially available products include, for example, San-Aid SI-L85, the same SI-L110, the same SI-L145, the same SI-L150, and the same SI-L160 (manufactured by Sanshin Chemical Industry Co., Ltd.). The ratio of use of the component [C] is preferably 20 parts by weight or less, more preferably 5 parts by weight or less, based on the weight of the polymer [a] 1 〇 〇. When the amount is more than 20 parts by weight, in the coating film forming step, precipitates may be precipitated to affect the formation of the coating film. The polymerizable compound having at least one ethylenically unsaturated double bond of the above component [D] is, for example, a monofunctional (meth) succinic acid ester, a difunctional (meth) acrylate or a trifunctional (methyl) propyl group. Dilute vinegar. The above-mentioned mono-Lum et al. (meth) acrylate vinegar, for example, 2-ethyl (meth) acrylate, carbitol (meth) acrylate, isobornyl (meth) acrylate, 3 - methoxybutyl (methyl ketone) ... ^, dry an acrylate, 2-(methyl) propyl storage oxiranyl ethyl 2- propyl phthalate and the like. These commercially available products are, for example, Aronix M-101, Tong, M_m (East Asia Synthetic-35-200912531 (stock)), KAYARAD TC-110S, manufactured by TC-Pharma (share), Viscoat 1 58, and 23 1 1 (Daiye (share) manufacturing) and so on. The above difunctional (meth) acrylates are, for example, acrylate, 1,6-hexanediol di(meth)acrylate, (meth) acrylate, polypropylene glycol di(methyl)propanol di(a) Acrylate, bisphenoxymethanol, diphenoxyethanol oxime diacrylate, and the like. These cities | Aronix M-210, with M-240, with M-6200 (made in East Asia), KAYARAD HDDA, with HX-22 0, with the same R drug (stock), Viscoat 260, with 312, with organic chemistry Industrial (stock) manufacturing) and so on. The above trifunctional or higher (meth) acrylate is propane tri(meth) acrylate, pentaerythritol tris(methyl, tris((meth) propylene methoxyethyl) phosphate, methyl acrylate, dipentaerythritol Penta(methyl) pentylerythritol hexa(meth) acrylate, etc., which is commercially available as M-3 09, with M-400, with M-405, with M-45 0, [1 M-8030, Same as M-8 060 (manufactured by East Asia Synthetic Co., Ltd.) TMPTA, same DPHA, DPCA-20, DPCA-60, DPCA-120 (manufactured by Nippon Kayaku Co., Ltd.), same as 00, same as 3, 60. With GPT, the same 3PA, the same 400 industry (shares) manufacturing and so on. It is preferable to use a trifunctional or higher (meth) 120S (Nippon Chemicals Co., Ltd. ethylene glycol (methyl 1,9-nonanediol dibasic acid ester, tetraethylene acrylate, double S product, for example: Synthetic (stock) system.-604 (Nipponization 3 3 5 HP (Osaka has trimethylol) acrylate pentaerythritol tetra (enoate, second season ij if Aronix 0 M-7 1 00 > [WI, KAYARAD 30. Same as DPCA-, Viscoat 295 (Osaka organic acrylate, especially in -36-200912531) is preferably trimethylolpropane tri(methyl) acrylate, alcohol tetra(meth) acrylate, dipentaerythritol Heterofunctional, difunctional or trifunctional or higher of these hexamethyl (meth)propenes (methyl esters may be used singly or in combination. When the component [D] is used in a ratio of 1 part by weight to the weight of the polymer [A] It is desirable to use a weight of 5 ', more preferably 30 parts by weight or less. The linear radiation sensitive system of the present invention contains the component [D] in the above ratio, which can improve the heat resistance and surface of the obtained film or microlens. Hardness, etc. When the amount exceeds the amount, it forms a sensitive layer on the substrate. In the coating step of the radioactive resin composition, the coating film may be rough. The epoxy resin other than the polymer [A] of the component [E] is not particularly limited, and is preferably bisphenol. A type epoxy novolac type epoxy resin, cresol novolak type epoxy resin, aliphatic epoxy resin, glycidyl ester type epoxy resin, glycidyl epoxy resin, heterocyclic epoxy resin, methacrylic acid shrinkage A glycerin) polymerized resin, etc. Among them, a bisphenol A type epoxy resin, an aldehyde varnish type epoxy resin, a glycidyl ester type epoxy resin, etc. are preferable. The ratio of the [E] component is used for the polymer [A]. 100 00 is preferably used in an amount of 30 parts by weight or less. The radiation-sensitive composition of the present invention contains the component [E] in this ratio, and the heat resistance and surface hardness of the obtained film can be improved. The ratio exceeds 30 parts by weight. When a coating film of a radiation-sensitive linear resin composition is formed on a substrate, the film thickness of the coating film may be uneven. The pentaerythritol ester propylene is a step of 50 parts of the resin layer between the resin layers. Resin, ring The base amine type (co-cresol phenolic weight-retaining resin layer is inexact, and it will produce -37-200912531. The polymer [A] may also be called "epoxy resin", but the [A] component has alkali solubility. It is different from the component [E]. The component [E] is insoluble. To improve the coating property of the sensitive radiation linear resin composition of the present invention, a surfactant of the component [F] can be used. [F] interface activity can be used. For example, a fluorine-based surfactant, a polyfluorene-based surfactant, and a nonionic surfactant can be used. Specific examples of the fluorine-based surfactant, for example, 1,1,2,2-tetrafluorooctyl (1) 1,2,2-tetrafluoropropyl)ether, 1,2,2,2-tetrafluorooctyl hexyl ether, octaethylene glycol bis(1,1,2,2-tetrafluorobutyl)ether, hexamethylene Alcohol bis(1,1,2,2,3,3-hexafluoropentyl)ether, octapropylene glycol bis(1,1,2,2-tetrafluorobutyl)ether, hexapropylene glycol di(1,1,2 , 2,3,3_hexafluoropentyl)ether, sodium perfluorododecylsulfonate, 1,1,2,2,3,3,9,9,10,10-decafluoro-12, 1,1,2,2,3,3-hexafluoroindole, etc. 'In addition to sodium fluoroalkylbenzene sulfonate; fluoroalkoxy B Ether; fluoroalkyl ammonium iodonium, fluoroalkyl polyoxyethylene ether, perfluoroalkyl polyoxyethylene; perfluoroalkyl alkoxylate; fluoroalkyl esters. Commercially available products such as: BM-1000, BM-1100 (manufactured by BM Chemie), Mega fa c F142D, same as F172, same as F173, same as F183, same as F178, same as F191, same as F471 (large Japanese ink) Chemical industry (stock) manufacturing), Fulorad FC-170C, FC-171, FC-430, FC-431 (manufactured by Sumitomo 3M (share)), Surflon S-112, same S-113, same S-131, same S -141, the same S-145, the same S-382, the same SC-101, the same SC-102, the same SC-103, the same SC-104, the same SC-105, the same SC-106 (made by Asahi Glass Co., Ltd.) , F-TOP EF301, the same 3 03, the same 3 52 (new Akita Chemicals Co., Ltd.) -38- 200912531 and so on. The polyoxo-based surfactants are, for example, DC-3PA, DC-7PA, FS-1265, SF-8428, SH11PA, SH21PA, SH28PA, SH29PA, SH30PA, S Η -1 90, S Η -1 9 3, SZ - 6 0 3 2 (Dongli Dowcorning · Silicone (manufactured)), TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, TSF-4452 ( Μ 〇mentiveperf 〇rmancemateria 1 s J apa η contract company system) and other product name sellers. As the nonionic surfactant, for example, a polyoxyethylene alkyl ether such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether or polyoxyethylene oleyl ether; polyoxyethylene octylphenyl ether or polyoxyethylene fluorenyl group can be used. a polyoxyethylene aryl ether such as phenyl ether; a polyoxyethylene dialkyl ester such as polyoxyethylene dilauryl ester or polyoxyethylene distearyl ester; and a (meth)acrylic copolymer Poly fl〇w No. 57, 95 (manufactured by Co., Ltd. Oil and Fat Chemical Industry Co., Ltd.). These surfactants may be used singly or in combination of two or more. The [F] surfactant is preferably used in an amount of from 5 parts by weight or less, more preferably from 0.1 to 2 parts by weight, per 100 parts by weight of the polymer [a]. [F] When the amount of the surfactant used exceeds 5 parts by weight, when a coating film is formed on a substrate, the film of the coating film may be easily formed, and the interlayer insulating film or the adhesion of the microlens to the substrate may be improved. [G] Adhesive aid can be used in the sensitive radiation linear resin composition of the present invention. As such a [G] adhesion aid, a functional decane coupling agent such as a decane coupling agent having a carboxyl group, a methacryl fluorenyl group, an isocyanate group or an epoxy group, which reacts with a substituent of 200912531 can be used. Specific examples include, for example, trimethoxymethyl decyl benzoic acid, γ-methyl propyloxy propyl trimethoxy decane, vinyl triethoxy decane, vinyl trimethoxy decane, and γ-isocyanate propyl. Triethoxy decane, γ-glycidoxypropyltrimethoxydecane, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, and the like. The [G] adhesion aid is preferably used in an amount of 20 parts by weight or less, more preferably 2 to 10 parts by weight, based on 100 parts by weight of the polymer [A]. When the amount of the adhesion aid used exceeds 20 parts by weight, development may be liable to occur in the development step. Sensitive Radiation Linear Resin Composition The sensitive radiation linear resin composition of the present invention is prepared by uniformly mixing the above components [A] and [B] and the other components optionally added as described above. The sensitive radiation linear resin composition of the present invention is dissolved in a suitable solvent' to be used in a solution state. For example, a mixture of the polymers [A] and [B] and any other components added in a predetermined ratio can be used to prepare a radiation sensitive linear resin composition in a solution state. M ft The solvent used in the sensitive radiation linear resin composition of the present invention is a one which can dissolve the components of the polymers [A] and [B] and the other components added as described above in a uniform manner and does not react with each component. The seeding solvent is, for example, the same solvent as that exemplified for the solvent used for the production of the above polymer [A]. In the solvent, 'from the viewpoint of the solubility of each component, the reactivity with each component, and the ease of formation of a coating film, for example, an alcohol, a glycol ether, -40-200912531 ethylene glycol alkyl ether ethyl ester, Ester and diethylene glycol. Particularly preferred among them are benzyl alcohol, 2-phenyl alcohol, 3-phenyl-propanol ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol diethyl ether, diethylene glycol Methyl ether, diglyme, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl methoxy vapor, ethyl ethoxy propionate. In order to improve the in-plane uniformity of the solvent and film thickness, a high boiling point solvent can be used. High-boiling solvents which can be used, for example, are N-methylformamide, hydrazine, hydrazine-dimethylformamide, N-methylanilinium, N-methylacetamide, N,N-dimethyl B. Indoleamine, N-methylpyrrolidone, dimethylhydrazine, benzylethyl n, dihexyl ether, etidylacetone, isophorone, caproic acid, heptanoic acid, 1-octanol, 1-nonanol, Benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl sulfonate, γ-butyrolactone, ethylene carbonate, propylene carbonate, phenylethylene glycol ethyl ether acetate, and the like. Preferred among them are Ν-methylpyrrolidone, γ-butyrolactone, hydrazine, hydrazine-dimethylacetamide. When the solvent of the sensitive radiation linear resin composition of the present invention is a high-boiling-point gastric agent, the amount of the high-boiling solvent used is 50% by weight or less, preferably 40% by weight or less, more preferably 30%, based on the total solvent. Below weight%. When the amount of the high-boiling solvent used exceeds the ratio, the film uniformity, sensitivity, and residual film ratio of the film may be affected. When the sensitive radiation linear resin composition of the present invention is prepared in a solution state, the ratio of components other than the solvent occupied in the solution (i.e., the total amount of the polymer [A], [b] component, and any other components added arbitrarily) (hereinafter This nickname "solids concentration" can be arbitrarily set for the purpose of use or the desired film thickness, etc. 'usually 5 to 50% by weight, ideally 1 〇~4 〇 weight -41 - 200912531% More preferably, it is 1 5 to 3 5 wt%. The composition solution prepared above is used after being filtered using a micropore filter having a pore size of 〇 2 μm or the like. Formation of Interlayer Insulating Film and Microlens Next, a method of forming the interlayer insulating film and the microlens of the present invention by using the sensitive radiation linear resin composition of the present invention will be described. The method for forming an interlayer insulating film or a microlens of the present invention comprises the following steps of the following steps: (1) a step of forming a coating film of the radiation sensitive linear resin composition of the present invention on a substrate, and (2) a radiation. a step of irradiating at least a portion of the coating film, (3) a developing step, and (4) a heating step. (1) a step of forming a coating film of the radiation sensitive linear resin composition of the present invention on a substrate. In the step (1) above, coating the composition solution of the present invention on the surface of the substrate is preferably by prebaking The solvent is removed to form a coating film of the radiation sensitive linear resin composition. The types of substrates that can be used include, for example, a glass substrate, a ruthenium-based plate, and a substrate on which various metals are formed. The coating method of the composition solution is not particularly limited, and for example, a spray coating method, a smear coating method, a spin coating method, or a slit die coating method (SIit Die-42-200912531) can be used.

Various methods such as Coat), a bar coating method, and an inkjet method are particularly preferred as a spin coating method or a slit die coating method. The conditions for prebaking vary depending on the type of each component and the ratio of use. For example, 6 0~1 1 〇. (:, 30 seconds to 1 5 minutes. The film thickness of the formed coating film is in the number of pre-baking, for example, 3 to 6 μηι when forming an interlayer insulating film. When forming a microlens, it is 〇. 5~3 μπ1 (2) a step of irradiating the radiation to at least a portion of the coating film. In the step (2), at least a portion of the coating film formed as described above is irradiated with radiation. At least a portion of the coating film is irradiated. In the case of radiation, for example, a method of irradiating radiation through a mask having a predetermined pattern. The radiation used at this time is, for example, ultraviolet rays, far ultraviolet rays, X-rays, or electric particle lines, etc. The above ultraviolet rays are, for example, g-rays. (wavelength 4 3 6 nmi ray (wavelength 365 nm), etc. The far ultraviolet ray is, for example, a KrF excimer laser, etc. The χ ray is, for example, a synchrotron radiation, etc. The charged particle beam is, for example, an electron beam, etc. Among them, ultraviolet rays are particularly preferable. Preferably, the radiation is contained in the g-ray and/or the earth ray. The exposure amount when forming the interlayer insulating film is preferably 5 〇 〜1, 5 〇〇 J/m 2 , and the exposure amount in the case of forming the microlens is preferably 50~2, 〇〇〇J/m2. (3) Development step 3) The coating film irradiated with the radiation wire as described above is subjected to development treatment using a developing solution, and the radiation-irradiated portion is removed to obtain a pattern-patterned film (patterned film). Development for development processing For the liquid, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, diethylaminoethanol, di-n-propylamine, triethylamine can be used. , methyl diethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrolipid, hexahydropyridine, 1,8-diazabicyclo [5.4 · 0]- 7 - An aqueous solution of a base (basic compound) of undecene, 1,5-diazabicyclo[4.3.0]-5-nonane, etc. The p Η of the alkaline aqueous solution is preferably from 10 to 1, preferably An aqueous solution of a water-soluble organic solvent such as methanol or ethanol or a surfactant, or various organic solvents in which the composition of the present invention is dissolved may be used as a developing solution in the above aqueous alkali solution. Suitable methods using a stirring method, a dipping method, a shaking dipping method, a spraying method, and the like The development time at this time varies depending on the composition of the sensitive radiation linear resin composition of the present invention, the composition of the developer, and the development method employed, and is usually 30 to 120 seconds. (4) The heating step is as described above (3) After the development step, it is preferable that the obtained S-shaped film S s is subjected to a cleaning treatment using, for example, a running water cleaning, and it is more preferable to irradiate (post-exposure) the radiation of a high-pressure mercury lamp or the like to the remaining 1 in the film. After the 2-naphthoquinonediazide compound is subjected to decomposition treatment, the film is subjected to heat treatment (post-bake treatment) by a heating device such as a thin oven to prevent the film from being hardened. The exposure amount in the above post-exposure step is desirably 2,000 to 5,000 J/m2. The sintering temperature of this hardening treatment is -44 - 200912531 degrees, for example, 120 to 25 0 °C. The heating time varies depending on the type of the heating machine. For example, when the heat treatment is performed on a hot plate, the heating time is 5 to 30 minutes, and when the oven is subjected to heat treatment, the heating time is 30 to 90 minutes. In this case, the stage baking method of the heating step of 2 or more times can be used. Thus, a pattern-like film corresponding to the intended interlayer insulating film or microlens can be formed on the surface of the substrate. The interlayer insulating film and the microlens formed as described above are excellent in adhesion, heat resistance, solvent resistance, transparency, and the like by the following examples. Interlayer insulating film The interlayer insulating film of the present invention formed as described above has good adhesion to a substrate, is excellent in solvent resistance and heat resistance, has high transmittance, and has a low dielectric constant, and is suitable for an interlayer insulating film of an electronic component. Microlens The microlens of the present invention formed as described above has good adhesion to a substrate, is excellent in solvent resistance and heat resistance, has high transmittance, and has a good melt shape, and is suitable for a microlens of a solid-state imaging element. The shape of the microlens of the present invention is a semiconvex lens shape as shown in Fig. 1(a). [Embodiment] [Examples] Hereinafter, the present invention will be more specifically described by way of Synthesis Examples and Examples, and the present invention is not limited to the following examples. Synthesis Example of Polymer [A] Synthesis Example 1 7 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts by weight of diethylene glycol ethyl methyl ether were placed in a cooling tube and In the flask of the stirrer. Next, 15 parts by weight of methacrylic acid, 20 parts by weight of tricyclo[5.2.1. 〇2'6]nonane-8-yl methacrylate, 5 parts by weight of 4-methylpropenylmorpholine, and methyl group were added. After 50 parts by weight of glycidyl acrylate, 1 part by weight of styrene, and 3 parts by weight of pentaerythritol tetrakis(3-hydrothiopropionate) were subjected to nitrogen substitution, stirring was started slowly. The temperature of the solution was raised to 70 ° C, and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer [A -1]. The copolymer [A-1] had a polystyrene-equivalent weight average molecular weight (Mw) of 12,000 and a molecular weight distribution (Mw/Mn) of 3.0. The polymer solution obtained had a polymer concentration of 34.8 wt%. Synthesis Example 2 8 parts by weight of 2,2-azobis(2,4-dimethylvaleronitrile) and 17.2 parts by weight of diethylene glycol ethyl methyl ether were placed in a flask equipped with a cooling tube and a stirrer. Next, 2 parts by weight of bismuth methacrylate, 50 parts by weight of glycidyl methacrylate, 3 parts by weight of N-cyclohexylmethyleneimine, (3-ethyloxycyclobutan-3-yl group) 13 parts by weight of methacrylate, 10 parts by weight of α-methyl-p-hydroxystyrene, and 3 parts by weight of pentaerythritol tetrakis(3-hydrothiopropionate) were subjected to nitrogen substitution, and then stirring was started slowly. The temperature of the solution was raised to -46-200912531 7 (TC, after reaching 7〇1, after 20 minutes, the funnel was started using a funnel for 40 minutes to diethylene carbonate of N-cyclohexylmethyleneimine. 6 parts by weight of an ether 20% by weight solution was added dropwise to the flask, and after completion of the dropwise addition, the polymer solution containing the copolymer [A-2] was obtained by further maintaining at 70 ° C for 4 hours. The polystyrene-equivalent weight average molecular weight (Mw) is 1 〇, 0 〇〇, and the molecular weight distribution (Mw/Mn) is 2.8. The polymer enthalpy of the obtained polymer solution is 33·1 tomb %° Synthesis Example 3 8 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 184 parts by weight of diethylene glycol ethyl methyl ether were placed in a flask equipped with a cooling tube and a stirrer. 15 parts by weight of propylene ketone, 40 parts by weight of methacrylic acid glycidol vinegar, 1 part by weight of fluorene-phenyl maleimide, 20 parts by weight of tetrahydrofurfuryl methacrylate, and vinyl After 5 parts by weight of benzyl-2,3-epoxypropyl ether and 3 parts by weight of trimethylolpropane tris(3-hydrothiopropionate) were subjected to nitrogen substitution, stirring was started slowly. The temperature is raised to 70 ° C, after reaching 70 ° C, after 20 minutes, N - cyclohexyl maleimide diamine diethylene glycol ethyl methyl ether 20% by weight solution 15 parts by weight Dropped into the flask. After 40 minutes and 60 minutes, 15 parts by weight of a 20% by weight solution of N-cyclohexylmethyleneimine in diethylene glycol ethyl methyl ether was added to the flask. After the completion of the addition after 6 minutes, the mixture was further kept at 70 ° C for 4 hours to obtain a polymer solution containing the copolymer [A - 3]. The polystyrene-equivalent weight average molecular weight of the copolymer [A-3] (Mw) was 9,800, and the molecular weight distribution (Mw/Mn) was 2.7. The polymer concentration of the obtained polymer-47-200912531 solution was 33.4% by weight. Synthesis Example 4 2,2'-azobis ( 8 parts by weight of 2,4-dimethylvaleronitrile and 22 parts by weight of diethylene glycol ethyl methyl ether were placed in a flask equipped with a cooling tube and a stirrer. Then, 1 part by weight of styrene and 20 parts by weight of methacrylic acid were added. Parts, 50 parts by weight of glycidyl methacrylate, 15 parts by weight of N-(4-hydroxyphenyl)methacrylamide, and dipentaerythritol hexa(3-hydrogen sulfide After 3 parts by weight of propionate was substituted with nitrogen, 5 parts by weight of 1,3-butadiene was added, and stirring was started slowly. The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a copolymer-containing copolymer [A] The polymer solution of the copolymer [4] has a polystyrene-equivalent weight average molecular weight (Mw) of 8,900 and a molecular weight distribution (Mw/Mn) of 3.0. The polymer solution obtained has a polymer concentration of 3 2.9 wt%. Comparative Synthesis Example 1 8 parts by weight of 2,2'-azobis(2,4-dimethylvaleronitrile) and 220 parts by weight of diethylene glycol ethyl methyl ether were placed in a cooling tube and a stirrer. In the flask. 10 parts by weight of styrene, 20 parts by weight of methacrylic acid, 40 parts by weight of glycidyl methacrylate, 10 parts by weight of (3-ethyloxycyclobutane-3-yl)methacrylate, and three 20 parts by weight of a ring [mo2,6]decane-8-yl methacrylate and 4 parts by weight of an α-methylstyrene dimer were slowly stirred after nitrogen substitution. The temperature of the solution was raised to 7 (rc' for 4 hours to obtain a polymer-containing copolymer of copolymer [a-1]-48-200912531. The polystyrene-equivalent weight average molecular weight of the copolymer [al] (Mw a molecular weight distribution (Mw/Mn) of 2.4, and a polymer concentration of the obtained polymer solution of 33.6% by weight. The weight of each component supplied to the radical polymerization and the polymer concentration of the obtained polymer solution, The polymerization conversion ratio of each of the above synthesis examples was calculated according to the following formula. The results are shown in Table 1. Polymerization conversion ratio (% by weight) = polymer concentration of the polymer solution (% by weight) X input amount of each component (solvent) Total (g) + total of the components of the solvent (g) χίοο The polymer concentration (% by weight) of the polymer solution is a small amount of the polymer solution prepared by a known weight of the aluminum dish. Thereafter, the weight of the polymer solution was obtained, and further heated on a hot plate at 180 ° C for 1 hour. After removing the solvent, the weight was determined to obtain the weight of the polymer, and the weight of the polymer was + by the polymer. Weight of solution X 1 〇〇)) Table 1 Polymerization conversion ratio (% by weight) Synthesis Example 1 98.1 Synthesis Example 2 98.7 Synthesis Example 3 99.6 Synthesis Example 4 98.1 Comparative Synthesis Example 1 93.7 - 49- 200912531 Example 1 [Mens radiation linear resin composition Preparation of the product] The polymer [A]: the solution containing the copolymer [A-1] synthesized in the above Synthesis Example 1 is converted into an amount corresponding to 100 parts by weight of the copolymer [Ad] contained in the solution and [B Ingredients: 4,4'-[1-(4-(1-[4-hydroxyphenyl]-1-methylethyl)phenyl)ethylidene]bisphenol (1.0 mol) and 1,2 a condensate of naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol) (n) 30 parts by weight and (G) 5 parts by weight of γ-glycidoxypropyltrimethoxydecane of the adhesion aid After mixing, diethylene glycol ethyl methyl ether was added to make the solid content concentration 30% by weight, and then filtered through a membrane filter having a pore size of 0.2 μm to prepare a solution (S-1) of the radiation-sensitive linear resin composition. ~1 2. Comparative Examples 1 to 3 [Preparation of Sensitive Radiation Linear Resin Composition] In addition to the types described in Table 2 of the polymer [A] and [Β] components, In the same manner as in Example 1, the solutions (S-2) to (S-12) and (si) to (s - 3) of the radiation sensitive linear resin composition were prepared in the same manner as in Example 1. Examples 2 and 5, 8. The description of the component [B] of U and Comparative Example 2 indicates that two kinds of 1,2-naphthoquinonediazide compounds are used in combination. Example 1 3 Polymer [A]: The above Synthesis Example 1 was contained. The solution of the synthesized copolymer [A-1] corresponds to 100 parts by weight of the copolymer [A-1] (solid-50-200912531 form) and (F) surfactant·· SH-28PA (Dongli Dow Cornig (2 parts by weight) and (g) 5 parts by weight of γ-glycidoxypropyl dimethoxy decane of the adhesion aid, and then added with diethylene glycol ethyl methyl ether and propylene glycol monomethyl ether Acetate, the solvent composition is diethylene glycol ethyl methyl ether / propylene glycol monomethyl ether acetate = 6 / 4 (weight ratio), so that the solid content concentration is 20% by weight, the membrane filter with a pore size of 0 · 2 μηη Filter 'Prepare a solution (S -1 3 ) of the sensitive radiation linear resin composition. The abbreviations of the 'components' in Table 2 indicate the following compounds. (Bl) : 4,4'-[ 1- (4-( ΐ-[4-hydroxyphenyl]- ymethylethyl)phenyl)ethylidene bisphenol (1.0 mol) and 1,2-naphthalene A condensate of quinonediazide-5-sulfonic acid chloride (2.0 mol) (Β-2): 4,4',4"-ethylidenetriol (1. 〇mol) and 1,2-naphthalene a condensate of quinonediazide-5-sulfonic acid chloride (2·〇mole) (Β-3): 2,3,4,4'-tetrahydroxybenzophenone (1.0 mol) and 1,2 -naphthoquinonediazide-5-sulfonate (2.44 mol) (Fl) : SH-28PA (manufactured by Toray Dow Cornig Co., Ltd.) (G-1): γ-glycidoxypropyltrimethoxy Baseline-51 - 200912531

__ LO LO LO m LO LO ΙΟ ΙΩ LO LO LO LO LQ LO LQ LQ 槲_ IRW Γ~Π ο Type tH I o tH ooo τ—1 ϋ rH Ο ϋ ι—Η Ο rH 1 ο rH o tH oy—iooo »—1 1 ο τΜ 1 ϋ 蘅i CNJ _ _ oooo ο ο ο ο ο oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo Or*H ο ι-Η Ο r—4 〇tH Ο τ-Η _ _ o \ oo \ LO Ο \ LO 〇\ L〇o 〇\ Ο Φ Chain I-! eo CN3 Ο »—( Ο ι-Η Or~( Ο CM type t-1 1 CQ CO rH CS1 1 m C0 rH (Μ 1 PQ CO »—< (M 1 DQ CO r-< rH CM 1 CQ CO PQ 1. ..J 1 PQ \ T—( 1 CQ 1 PQ 1 PQ \ ?-Η 1 CQ 1 PQ 1 0Q \ r—1 1 PQ 1 PQ 1 PQ \ tH 1 PQ 1 CQ 1 PQ 1 \ rH 1 OQ 1 PQ § 〇ooo ο ο ο ο ο 〇O ooo ο ο r~n _ _ oooo ο ο ο ο ο o 〇ooo ο ο Polymer [A _ ^^ iH rH rH rH ι-Η ι-Η rH τ—I 1( r"H r —H 1-Η ι-Η rH I rH | jH | CM | CN0 1 CS1 1 00 1 C0 1 co 1 inch I inch 1 inch! tH 1 rH 1 1 τ—I 1 <<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<<> Tn 1 C/) 1 ίί) 1 ίΠ 1 CO 1 cn 1 cn 1 cn ! to 1 W 1 υι 1 W y—im C<JE cn m inch νη m C-- οο mos rH ί—H CS rH 莩CO rH 莩H cn Bracelet Collection Thirsty Grip Collection 镒镒舾K Λ 13⁄4 * Κ u IK ϋ JJ JA -52- 200912531 Examples 14-26 and Comparative Examples 4~6 <Interlayer insulating film Evaluation of Performance> Using the sensitive radiation linear resin composition prepared above, various characteristics of the interlayer insulating film were evaluated as follows. [Evaluation of Sensitivity] In Example 1 4 to 2 5 and Comparative Examples 4 to 6, the composition shown in Table 3 was applied onto a ruthenium substrate using a spin coater, and then 90 on a hot plate. (: Pre-baking was performed for 2 minutes to form a coating film having a film thickness of 3.0 μm. Example 26 was applied by a slit die coater, and the solvent was removed under reduced pressure of 〇5T〇rr, and then heated. The film was prebaked at 90 ° C for 2 minutes to form a film having a film thickness of 3 · 0 μm. The obtained film was passed through a PLA-501F exposure machine made of Canon with a pattern mask having a predetermined pattern ( Ultra-high pressure mercury lamp), after changing the exposure time for exposure, respectively, using a developing solution of the tetramethylammonium hydroxide aqueous solution having the concentration of Table 3, performing the stirring method for 24 seconds at 25 t, and then using ultrapure water to The water was washed for 1 minute, and after drying, the pattern was formed on the substrate. At this time, the minimum exposure amount required to completely dissolve the spatial pattern of the line of 3.0 μm and the gap (1:1) was measured. The sensitivity was as shown in Table 3. [Evaluation of development safety factor] Example 1 4 to 2 5 and Comparative Examples 4 to 6 were obtained by applying the composition shown in Table 3 to a ruthenium substrate using a spin coater. Pre-baking at 90 ° C for 2 minutes on a hot plate to form a film with a film thickness of 3 μm Example 26 was-53-200912531, which was coated with a slit die coater, and the solvent was removed under reduced pressure of Torr5 Torr, and then pre-baked on a hot plate at 90 ° C for 2 minutes to form a film thickness. 3.0μηι coating film. For the obtained coating film through the mask with a line pattern of 3 〇μιη line and gap (1:1), using the PLA-501F exposure machine made by Canon (super-compressed mercury lamp) The exposure was exposed to an exposure amount corresponding to the sensitivity measured by the above-mentioned "sensitivity evaluation", and the tetramethylammonium hydroxide aqueous solution having the concentration of the developer shown in Table 3 was used, respectively, at 25 (under: Change the development time to develop by stirring. Then use ultrapure water to wash with running water for 1 minute. After drying, the pattern is formed on the ruthenium substrate. At this time, the development time required for the line width of 3 · 0 μη is optimal. The development time is as shown in Table 2. The time until the line pattern of 3·0 μηη was peeled off was measured when the development was continued from the optimum development time, and the development safety factor was as shown in Table 3. This number was 3 0. Above the second, it means that the development safety factor is good. Evaluation of Shrinkage Ratio] Example 1 4 to 2 5 and Comparative Examples 4 to 6 were applied to a crucible substrate by using a spin coater, and then subjected to a hot plate at 90 ° C. The film was pre-baked for 2 minutes to form a film having a film thickness of 3. Ομπι. Example 26 was applied by a slit die coater, and the solvent was removed under reduced pressure of 〇·5 To rr, and then placed on a hot plate. The film was pre-baked at 90 ° C for 2 minutes to form a film having a film thickness of 3.0 μm. The film thickness (T 1 ) of the coating film obtained at this time was measured. The obtained film was not passed through the pattern mask by < ^11〇11 (shares) system? 1^-501? Exposure machine (Ultra High Pressure Mercury Lamp) exposes the cumulative exposure to 3,00 J/m2, and heats the substrate at 220 °C for 1 hour in a clean oven. -54- 200912531 The hardening thickness was measured, and the film thickness (11) of the cured film was measured, and the film thickness change rate of hardening was calculated {|tl-Tlj/Tl} X100 [%]. The results are shown in Table 3. When the number 値 is 10% or less, it means that the shrinkage rate at the time of hardening is good. Since the film formed by the evaluation of the shrinkage rate at the time of hardening does not need to be patterned, the radiation irradiation step and the development step are omitted, and evaluation is performed only by the coating film forming step, the post-baking step, and the heating step. [Evaluation of Solvent Resistance] In Example 1 4 to 25 and Comparative Examples 4 to 6, the composition shown in Table 3 was applied onto a ruthenium substrate using a spin coater, and then subjected to a hot plate at 90 ° C. Pre-bake in 2 minutes to form a coating film. Example 26 was applied by using a slit die coater. After removing the solvent under a reduced pressure of 0.5 Torr, it was prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film. The obtained coating film was exposed to a pattern mask by a Canon-type PLA-501F exposure machine (ultra-high pressure mercury lamp) to make the cumulative exposure amount to 3,00 (U/m2 for exposure, in a clean oven, The substrate was heated at 220 ° C for 1 hour to obtain a cured film having a film thickness of 3.0 μχ, and the film thickness (τ 2 ) of the coating film obtained at this time was measured. The substrate on which the cured film was formed was controlled at a temperature of 70 t. After immersing for 2 minutes in dimethyl sulfoxide, the film thickness (t2) of the cured film was measured, and the film thickness change rate { |t2-T2|/T2 } xlOO [%] produced by the immersion was calculated. 3. When the number 値 is 5% or less, the solvent resistance is good. The evaluation of the solvent resistance is such that the film formed does not need to be patterned, so that the radiation irradiation step and the development step are omitted, and only the coating film is formed. Evaluation of the step, the post-boiling step, and the heating step - 55 - 200912531 [Evaluation of heat resistance] A cured film was formed in the same manner as the evaluation of the solvent resistance described above, and the film thickness (T3) of the obtained cured film was measured. The film substrate was additionally baked at 240 ° C for 1 hour in a clean oven, and each was measured. The film thickness (t3) of the cured film was calculated as the film thickness change rate {113 - T 3 | / T 3 } X 1 〇〇 [ % ] by the additional baking. The results are shown in Table 3. The number 値 is 5 When it is less than or equal to 5%, the heat resistance is good. [Evaluation of transparency] A glass substrate "Corning 7059 (manufactured by Corning)" was used instead of the ruthenium substrate in the evaluation of the solvent resistance, and a cured film was formed on the glass substrate. The light transmittance of the glass substrate having the cured film was measured by a spectrophotometer "1 50-20 type double beam (manufactured by Hitachi, Ltd.)" at a wavelength in the range of 400 to 800 nm. The minimum transmittance at this time is shown in Table 3. As shown in the figure, when the number is more than 90%, 'the transparency is good. -56- 200912531 Transparency S CNi σϊ 00 CNJ inch inch in σ> CO 03⁄4 CO a inch σ> CS3 05 C^3 05 CO 7 Μ σ&gt ; inch ο ΙΟ heat resistance film thickness change rate (%) τ-Η τ—i rH r*H τ-Η τ—ί 1—i iH rH τ—ί τΉ ι-Η tH CO co inch heat resistance film thickness change Rate i (%) 00 CO CO CO c〇Γ0 00 Γ0 Γ〇Γ〇co CO CO CO 00 00 Hardening Shrinkage rate 1 Film thickness change rate (%) 00 00 00 Bub 00 00 00 00 00 00 Bu 1—i ι-Η »-Η r—i Development safety factor development safety factor (seconds) ο CO LO 00 o Inch ο CO LQ CO ο C0 ο co LO CO ο inch LO CO ο inch ο ο 00 o co LO co o CO 1 optimal development time (seconds) ο 00 o 00 o 00 ο 00 Ο 00 ο 00 ο 00 o 00 ο 00 ο 00 ο 00 ο 00 ο 00 o 00 ο 00 o 00 Sensitivity evaluation sensitivity (J/m2) ο LO LO oo LO oo LO ο LO LO Ο Ο LO ο ο LO ο LO UD oo L〇ο ο LO ο LO LQ ο ο LO ο ο LO ο ο iiO o LO ο ο oo oo developer concentration (wt%) inch ο inch o inch o inch ο inch ο inch ο inch ο inch o inch ο 00 C0 C<1 00 CO (Μ 00 CO CM inch ο inch ο inch ο inch ο composition species name ι—1 1 tn CM 1 m CO 1 CO inch 1 Π) LO 1 tn 1 1 00 卜 1 in 00 I in 05 1 (/) τΉ ! cn ι—1 rH I cn (Μ γΗ ι (Π CO ι—Η ι ιη N τ-Η I w C<] 1 CO co 1 w Example 14 Example 15 Example 16 Example 17 Example 18 Embodiment 19 Embodiment 20 Embodiment 21丨_1 Embodiment 22 ! _I Implementation Example 23 Example 24 Example 25 Example 26 Comparative Example 4 Comparative Example 5 Comparative Example 6 - 57 - 200912531 Examples 27 to 38 and Comparative Examples 7 to 9 <Performance Evaluation of Microlens> Using Sensitive Radiation Prepared as described above The linear resin composition evaluated various characteristics of the microlens as follows. The evaluation of the solvent resistance, the evaluation of the heat resistance, and the evaluation of the transparency can be referred to the results of the performance evaluation of the above interlayer insulating film. [Evaluation of Sensitivity] The composition shown in Table 4 was applied onto a ruthenium substrate by a spin coater, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film of 2.0 μm. For the obtained coating film, the projection exposure machine (NA = 0.50 ' λ = 3 65 ηιη) of NSR 1 75 5i7A made by NIKON Co., Ltd. was changed by a mask having a predetermined pattern, and the exposure time was changed for exposure, respectively. The developing solution of the tetramethylammonium hydroxide aqueous solution having the concentration shown in Table 4 was stirred and developed at 25 ° C for 1 minute. It is then washed and dried with water to form a pattern on the crucible substrate. At this time, the width of the gap pattern of the line of 0.8 μιη and the pattern of the gap (1:1) is determined to be the minimum amount of exposure required for 〇.8μηι. This number is the sensitivity, as shown in Table 4. [Evaluation of development safety factor] After the composition shown in Table 3 was applied onto a crucible substrate by a spin coater, it was pre-baked on a hot plate at 90 ° C for 2 minutes to form a coating film of 2·Ομπι. . For the obtained coating film, the projection exposure machine (ΝΑ = 0·50 ' λ = 3 6 5 ηιη ) is reduced by NSK 1 7 5 5 i7A made by NIKON (manufacturing) through a pattern mask having a predetermined pattern, which is equivalent to After exposure of the above-mentioned [sensitivity evaluation], the exposure amount of -58-200912531 degree 进行 was exposed, and the developing solution of the ammonium hydroxide aqueous solution of the concentration of Table 4 was used, respectively, and the development time was changed at 25 ° C, and the development method was mixed. . Then, it is washed with water, dried, and the development time required to determine the gap pattern of the line gap pattern (1··1) of 0 _ 8 μηι is 0.8 μm, which is the optimum development time, as shown in Table 4. After the optimum development time, the time until the development was continued at 0.8 μm (development safety factor) was as shown in Table 4. [Formation of Microlens] The composition shown in Table 4 was applied to a crucible using a spin coater, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a 2·coat film. For the obtained coating film, a NJ1755i7A reduction optical machine (ΝΑ = 0·50, λ = 3 65ηηι ) manufactured by NIKON Co., Ltd. is passed through a pattern mask having a dot width of 2.0 μm and 2.0 μm, corresponding to the above-mentioned " [Evaluation] The exposure amount of the sensitivity 测定 measured was subjected to exposure, and the developing solution concentration of tetramethylammonium hydroxide aqueous solution, which was evaluated for sensitivity of 4, was stirred and developed at 25 ° C for 1 minute. Then, it is dried to form a pattern on the ruthenium substrate. Then use Canon ( PLA_ 5 0 IF exposure machine (ultra-high pressure mercury lamp) for exposure to make the amount of 3,000 J / m2. Then use the heating plate to 16 (rC heating the clock, then heat at 23 ° C for 10 minutes, so that The pattern is melted, and the size of the bottom of the microlens (the surface contacting the substrate) forming the ruthenium is tetrazed by the pattern. The width is shown. The pattern of the full-coefficient substrate is Ομιη. The surface of the micro-lens (diameter -59-200912531) and the cross-sectional shape are shown in Table 4. The size of the bottom of the microlens exceeds 4·0 μιη, and it does not reach 5.0 μιη, indicating Good. When the size exceeds 5.0 μm, the adjacent lenses are in contact with each other, so it is not ideal. The cross-sectional shape is as shown in the pattern diagram of Fig. 1, and the shape of the semi-convex lens of (a) is good, as in the case of (b) The shape of the table is not good. -60- 200912531 Inch 揪 microlens shape cross-sectional shape Ν—✓ s cd s— X—Ν c0 Nw^ /«—V cij /«—N y^S. ✓ —N. cd N—✓ cd N—✓ ·/-—NS—✓ κ *-Ν Cd N cd X-N cd bottom size (mm) LO inch inch CO inch inch inch CO inch inch inch inch CO inch (M inch LO CO inch CO inch inch inch CO CVJ inch development safety factor development safety factor (seconds) 〇CS1 Ο (Μ LO eg LO ϊ—t ο C\JL〇I-Η LO r~H o CM LO CM o (M in o CM L〇tH o CNJ o CM Optimum development time (seconds) 〇Ο CD o Ο CD ο 1 Ο CO oo 1 o 1 〇o CD o CD o CO o CO 〇CD Sensitivity evaluation If 〇〇r—4 rH Ο Ο Ο 1—( 〇〇Ο Ο Ο τ—1 ο ο σ> ο ο oo tH rH ooo rH ooor—foor—( iH ooo rH 〇〇oo LO t—( oo CO 〇〇CO r—*i developer concentration (wt%) inch inch Ο inch ο inch Ο inch ο inch ο inch o inch o inch o 00 CO CO 00 CO CM 00 CO CM inch o inch inch o composition species name rH I CO CM 1 m CO m inch (/) LO I tn 1 I CO 00 1 cn Ci mo rH in rH tH t CO CM rH (/) y - N rH 1 ζΛ C < J 1 ιο CO I w Example 27 Example 28 Example 29 Example 30 Example 31 Example 32 _______________1 Example 33 Example 34 Example 35 Example 36 Example 37 Example 38 Comparative Example 7 Comparative Example 8 Comparative Example 9 -61 200912531 Effect of the Invention The sensitive radiation linear resin composition of the present invention has high radiation sensitivity and excellent development safety factor, and can be easily formed. A heat-resistant pattern film (interlayer insulating film or microlens). The interlayer insulating film of the present invention formed from the above composition is excellent in solvent resistance and heat resistance, has high transmittance, and has a low dielectric constant. Therefore, it can be suitably used as an interlayer insulating film for electronic parts. Further, the microlens of the present invention which is formed from the above-mentioned composition is excellent in solvent resistance and heat resistance, and has high transmittance and good melt shape. Therefore, it can be suitably used as a microlens such as a solid-state image sensor. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the cross-sectional shape of a microlens. -62 -

Claims (1)

200912531 X. Patent application scope 1. A sensitive radiation linear resin composition comprising: [A] a group selected from at least one of a group consisting of a carboxyl group and a carboxylic anhydride group, selected from the group consisting of epoxy ethyl and oxocyclobutyl groups. a group of at least one of the groups and a polymer having a η valent group represented by the following formula (1), X—f—γ—RS—+ ) ( 1 ) η (in the formula (1), the R1 stretching a methyl group or a carbon number of 2 to 10 alkyl or an alkyl group, a hydrazine single bond, -C0-, -0-CO/ (but with a "*" linkage bonded to R1) or -NHCO , (but with the "*" linkage key bonded to R1), η is an integer from 2 to 10, and X is an η-valent hydrocarbon group having 2 or 70 carbon atoms or 1 or more ether linkages, and η is 3 And X is a trivalent group of the table τκ of the following formula (2), and "+" represents a linkage bond, (In the formula (2), each of R11 is independently a methyl group or an alkyl group having 2 to 6 carbon atoms, "*" each represents a linking bond), and [B] a 1,2-quinonediazide compound. -63- 200912531 2. The sensitive radiation linear resin composition of claim 1, wherein Y in the above formula (1) is -〇-C〇J (but the "*" linkage is added to the R1 bond. ). A sensitive radiation linear resin composition comprising: [A] comprising (al) at least one selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and (a2) containing at least one selected from the group consisting of An unsaturated compound formed by an unsaturated group of an epoxy group and an oxocyclobutyl group is represented by the following formula (8) X~~(-Y-rJ-SH) (8) (Formula (8) a polymer obtained by radical copolymerization in the presence of a compound represented by X, Y'R1 and η each of the above formula (1), wherein X, Y, R1 and η are synonymous, and [Β] 1, 2 - Bismuth azide compound. 4. The sensitive radiation linear resin composition of claim 3, wherein the enthalpy in the above formula (8) is -〇-C〇/ (but a "*" linkage is added to the R1 bond). 5. The radiation sensitive linear resin composition according to any one of claims 1 to 4, which is used for the production of an interlayer insulating film. 6. A method for producing an interlayer insulating film, characterized by comprising the following steps in the following order, (1) a step of forming a coating film of a radiation-sensitive linear resin composition of claim 5 on a substrate, ( 2) a step of irradiating at least a portion of the coating film with radiation, -64-200912531 (3) developing step, and (4) heating step. An interlayer insulating film or microlens characterized by the method of claim 6 of the patent application. The sensitive radiation linear resin composition as described in any one of claims 1 to 4, which is used for the manufacture of microlenses. A method for producing a microlens, characterized by the steps of: (1) forming a coating film of a radiation-sensitive linear resin composition of claim 8 on a substrate in the following procedure: (2) a step of irradiating at least a portion of the coating film with radiation, (3) a developing step, and (4) a heating step. A microlens characterized by the method of claim 9 of the patent application. 1 1. A method for producing a polymer characterized by (al) at least one selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and (a2) containing at least one selected from the group consisting of epoxy ethyl groups and An unsaturated compound formed by an unsaturated group of a group of oxycyclobutyl groups is represented by the following formula (8) X~fY-R1-SH ) (8) ' / η (in the formula (8), X'Y The radical copolymerization is carried out in the presence of a compound represented by each of the 'R1 and η systems, which are synonymous with X-65-200912531, Y, R1 and η of the above formula (1). -66 -