200907335 九、發明說明： 【發明所屬之技術領域】 本發明係關於以檢測七a圓細I i 懷州出B曰圓端面部中之損傷或雜質等 之缺陷為特徵的晶圓端面檢查裝置。 【先前技術】 至今，晶圓之檢查中’主流為檢測出晶圓表背面之損 傷或雜質、裂痕之有無、膜不均等等，端面部則有較被忽 視的倾向然而’近年來已有端面部之缺陷會大幅影響良 率的認知，錢查晶圓端面部之要求日益提高。 具體而S ’當晶圓端面部有缺陷時，最壞情況下，會 2晶片之製程中晶圓破裂的問題。此時，不僅該晶圓上之 王部晶片會成為不良晶I亦會引起製造裝置、檢查裝置 之5染’導關製程本身產生巨大影響。 晶圓端面部係由向側面傾斜之斜面部、側面之頂點部 =缺陷有膜之邊緣切削不良或裂痕、損傷等。作為檢 : 因端面部之缺陷的裝置，例如有W〇2003/028089 於p (專^文獻U所不的裝置。此裝置係使用顯微鏡物 兄-洛射遂心照明成像光學系統取得晶圓端面部之影像， 以自影像檢測出缺陷。 [專利文獻i]w〇2003/028〇89號公報 【發明内容】 斜面4通常相對晶圓表背面傾斜％度左右，為了觀看 200907335 此部分須自傾斜方向照明，或將檢測系統傾斜配置。專利 文獻1中亦有—部分提及此點。斜面部之缺陷亦有可能愈 晶圓表背面之外周部壯能知 广门#狀態相關連，在檢查斜面部時， 係亦同時檢查與斜面部連 埂接之日日Η表背面之外周部。鈇 而，專利文獻1所記載之發明並無法同時檢查此等。…、 本發明有鑑於上诚播重 _ 月事，其课題為提供一種能同睥 查晶圓表面（或背面t 月1=1 u @檢 (才面）之斜面部與晶圓表面（或背面）之外周邱 的晶圓端面檢查裝置。 15 σ 為了解決前述課題的第！手段，為一種晶圓端， 係檢查相對晶圓平面傾斜 疋月度Θ之鈿面，其特徵在 ”備.正對該晶圓端面配置，用以擴散照明該晶圓端 面的擴散照明光學系統端 的成像光學系統； 及將心圓…像加以成像 當該成像光學线H之—半㈣度為BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer end face inspection device characterized by detecting defects such as damage or impurities in a round face portion of a seven-a round thin I i Huaizhou. [Prior Art] Up to now, in the inspection of wafers, the main reason is to detect the damage or impurities on the back surface of the wafer surface, the presence or absence of cracks, uneven film, etc., and the end face has a tendency to be neglected. Defects in the ministry will greatly affect the perception of yield, and the demand for money to check the wafer face is increasing. Specifically, when the wafer end face is defective, in the worst case, the wafer is broken during the process of the wafer. At this time, not only the king wafer on the wafer will become a bad crystal I, but also cause a huge influence on the manufacturing process and the inspection device itself. The wafer end face is a sloped surface that is inclined to the side, and the apex of the side surface = defective edge of the film, or crack, damage, or the like. As a device for detecting defects of the end face, for example, there is a device that is not used by W〇2003/028089 in p. This device uses a microscope object to obtain a wafer end face by a laser illumination imaging optical system. The image is detected by a self-image. [Patent Document i] w〇2003/028〇89 Bulletin [Invention] The bevel 4 is usually inclined by about 100 degrees with respect to the back surface of the wafer, and this portion must be tilted in order to view 200907335. Illumination, or tilting the detection system. There is also a part of this in Patent Document 1. The flaws on the bevel may also be more than the other side of the wafer surface. At the same time, the outer circumference of the back surface of the slanting surface is also checked at the same time. However, the invention described in Patent Document 1 cannot simultaneously check these. _ Moon, the topic is to provide a wafer end face that can be used to check the surface of the wafer (or the surface of the back surface of the wafer 1 or the surface of the wafer (or the back surface) Check the device. 15 σ for understanding The method of the above-mentioned problem is a wafer end which is inspected with respect to the plane of the wafer, and is characterized by a surface of the wafer, which is disposed on the end surface of the wafer for diffusing and illuminating the end surface of the wafer. An imaging optical system at the end of the diffused illumination optical system; and imaging the centroid image as the imaging optical line H - half (four) degrees
擴散照明光學李矫，孫M W 子系、“、將從相對該晶圓平面之法線方向往 =側方向之傾斜角Θ，起之2“θ，範圍内所有角度 的光線’照射於該晶圓平而令认田如匕 …曰曰®千面之外周部與該端面部的邊界附 近以及8玄端面部各點。 圓端前述課題的第2手段，如前述第1手段之晶 囫鳊面裝置，其中，當該擴 成像丼與έ Μ 、散…月光予糸統之端部位於該 起之古該晶圓之間’且該端部位於自該晶圓平面 心L的位置時，係將該擴散照明光學系統配置成該 擴政照明光學系統之端 先學系統之視野區域 °°二起之Hxtan Θ，以上外側的位置。 200907335 為了解決前述課題的第 圓端面裝置，其具備透過該 系統對該晶圓平面之外周部 系統； 3手段，如前述第1手段之晶 成像光學系統中一部分之光學 進行落射照明的落射照明光學 該擴㈣明光學系統及該落射㈣光學 =該晶圓平面之法線方向往該晶圓平面外周部方向= 斜角Θ，起、至相對該晶圓平 夕心L…。 之法線方向往該端面側方向Diffusion illumination optical Li Jiao, Sun MW sub-system, ", from the normal direction of the plane of the wafer to the direction of the slope of the direction Θ, 2 "θ, all angles of light in the range" illuminate the crystal The round is flat and the field is like a 匕 曰曰 曰曰 曰曰 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千The second method of the above-mentioned problem of the round end is the wafer device of the first aspect, wherein the end of the image is located at the end of the image. When the end portion is located at a position from the center L of the wafer, the diffusion illumination optical system is configured to be Hxtan Θ of the field of view of the front-end system of the expansion illumination optical system. The position of the outside. 200907335 In order to solve the above-mentioned problem, a circular end face device includes an outer peripheral portion system that passes through the system to the wafer plane; and 3 means an epi-illumination optical that is optically epi-illuminated by a part of the crystal imaging optical system of the first means. The expansion (four) optical system and the epitaxy (four) optics = the normal direction of the wafer plane to the outer peripheral direction of the wafer plane = oblique angle Θ, up to the wafer center L. The normal direction is toward the end face side
貝斜角2Θ + Θ’範圍内所有角度的光線，照射於 +面之外周部、該邊界附近、以及該端面部各點。 為了解決前述課題的第4手段，如前述第2手段之曰 圓端面裝4，其具備透過該成像光學系統中—部分：光： 系統而對該晶圓平面之外周部進行^射照明的落射昭明: 學系統； ' 該擴散照明光學系統及該落射照明光學系統，係將從 相對該晶圓’面之法線方向往該晶圓平自外周#方向之傾 斜角Θ，起、至相對該晶圓平面之法線方向往該端面側方向 之傾斜角2Θ+Θ，範圍内所有角度的光線，照射於該晶圓 平面之外周部、該邊界附近、以及該端面部各點。 為了解決前述課題的第5手段，為一種晶圓端面裝置， 係檢查晶圓端面，其具備照明該晶圓之照明光學系統與將 該晶圓之端面像加以成像的成像光學系統，該照明光學系 統’具備透過該成像光學系統中一部分之光學系統照明兮 晶圓之第1照明光學系統的落射照明光學系統，以及正對 該晶圓端面配置、用以擴散照明該晶圓之第2照明光學系 200907335 統的擴政照明光學系統；使該第2照明光學系統之光源彎 曲以覆蓋該晶圓之端面。 為了解決前述課題的第6手段，為一種晶圓端面裝置， 係松查晶圓端® ’其具備照明該晶圓之照明光學系統與將 3亥曰曰圓之端面像加以成像的成像光學系統，該照明光學系 、、’充八備透過β亥成像光學系統中一部分之光學系統照明該 曰曰圓，第1照明光學系統的落射照明光學系統，以及正對 〆 』曰曰圓端面配置、用以擴散照明該晶圓之第2㉟明光學系 、统的擴散照明光學系統；除了該第i照明光學系統與該第 2照明光學系統以外’尚具備包圍該成像光學系統之環狀 第3照明光學系統。 為了解決前述課題的第7手段，為一種晶圓端面裝置， 係檢查晶圓端面，1目Μ ^ ® 其具備照明該晶圓之照明光學系統與將 該晶圓之端面像加以成像的成像光學系統，該照明光學系 統’具2透過該成像光學系統中一部分之光學系統照明該 晶圓之弟 1昭明水與^ i ‘、、'九子系統的落射照明光學系統，以及正對 該曰曰圓端面配置、用以擴散照明該晶圓之第2照明光學系 統的擴散照明光學系統； 該第2照明光學系統，係藉由複數個擴散照明光學系 統之組口、或擴散照明光學系統與擴散板或反射鏡的組 合，而覆蓋該晶圓面。 為了解決前述課題的第8手段，如前述第5手段之晶 圓細面裝置’其中，使用於該第1照明光學系統與該第2 照明光學系統之光源的波長特性係互異。 8 200907335 為了解決前述課題的第9手段，如前述第6手段之晶 圓端面裝置，其中，使用於該第3照明光學系統之光源的曰 波長特性，與使用於該第丨照明光學系統之光源的波長特 性、使用於該帛2照明光學系統之光源的波長特性的至少 一個相異。 為了解決前述課題的第10手段，如前述第7手段之晶 圓端面裝置’其中，使用於該第1照明光學系統與該第2 妝明光學系統之光源的波長特性係互異。 根據本發明，能提供能同時檢查晶圓表面（或背面）之 斜面部與晶圓表面（或背面）之外周部的晶圓端面檢查裝 置。 — 【實施方式】 以下，使用圖說明本發明之實施形態β圖丨係顯示本 發明第1實施形態之晶圓端面檢查裝置概要的圖。於未圖 示之可旋轉之保持具吸附保持有晶圓丨，藉由使保持具旋 轉可任意改變晶圓丨上之檢查位置。於晶圓表面外周部2 之垂直上方配置有成像光學系統4，使來自晶圓表面外周 部2、以及表面斜面部3之光聚集以將晶圓端面區域（晶圓 表面外周部2與斜面部3)之像成像於CCD等之攝影元件Light at all angles in the range of 2 Θ + Θ' of the bevel angle illuminates the periphery of the + face, the vicinity of the boundary, and the points of the end face. In order to solve the fourth aspect of the present invention, the rounded end surface mounting 4 of the second aspect is provided with an aperture that transmits illumination to the outer peripheral portion of the wafer plane through a portion of the imaging optical system. Zhaoming: Learning system; 'The diffused illumination optical system and the epi-illumination optical system are from the normal direction of the wafer's surface to the wafer from the angle of inclination of the outer circumference #, to the opposite The inclination angle of the normal direction of the wafer plane toward the end surface side is 2Θ+Θ, and all angles of light in the range are irradiated to the periphery of the wafer plane, the vicinity of the boundary, and the points of the end face. In order to solve the above-described problems, a wafer end surface apparatus is provided with an end surface of a wafer, and an illumination optical system for illuminating the wafer and an imaging optical system for imaging an end surface image of the wafer, the illumination optical The system 'having an epi-illumination optical system that illuminates the first illumination optical system of the wafer through an optical system of a portion of the imaging optical system, and a second illumination optical that is disposed on the end surface of the wafer to diffuse and illuminate the wafer The 200907335 system of expanding the illumination optical system; bending the light source of the second illumination optical system to cover the end surface of the wafer. In order to solve the above-mentioned problem, in the sixth aspect of the invention, a wafer end surface device is provided with an imaging optical system that illuminates the illumination optical system for illuminating the wafer and images the end surface of the 3 曰曰 circle. The illuminating optical system, the illuminating optical system that illuminates the illuminating part of the illuminating optical system, the epi-illuminating optical system of the first illuminating optical system, and the front end of the circular illuminating end system, a diffusion illumination optical system for diffusing the 235th optical system of the wafer; in addition to the ith illumination optical system and the second illumination optical system, there is a ring-shaped third illumination surrounding the imaging optical system Optical system. In order to solve the above-mentioned problem, the wafer end surface device is a wafer end surface device, and the first end of the wafer is provided with an illumination optical system for illuminating the wafer and an imaging optical for imaging the end surface image of the wafer. System, the illumination optical system 'has 2 through the optical system of a part of the imaging optical system to illuminate the wafer of the younger brother 1 Zhaoming water and ^ i ', 'the nine subsystems of the epi-illumination optical system, and the a diffused illumination optical system for diffusing a second illumination optical system for illuminating the wafer; the second illumination optical system is a group of diffusion illumination optical systems, or a diffusion illumination optical system and diffusion A combination of plates or mirrors covers the wafer face. In order to solve the above-mentioned problem, the eighth embodiment of the present invention provides the crystal light fine surface device of the fifth aspect, wherein the wavelength characteristics of the light source used in the first illumination optical system and the second illumination optical system are different from each other. The ninth means for solving the above-mentioned problem is the wafer end surface apparatus according to the sixth aspect, wherein the 曰 wavelength characteristic of the light source used in the third illumination optical system and the light source used in the ninth illumination optical system The wavelength characteristic and at least one of the wavelength characteristics of the light source used in the 帛2 illumination optical system are different. In the tenth means for solving the above-mentioned problems, the crystal end surface device of the seventh aspect is different in that the wavelength characteristics of the light source used in the first illumination optical system and the second makeup optical system are different. According to the present invention, it is possible to provide a wafer end face inspection device capable of simultaneously inspecting a bevel portion of a wafer surface (or a back surface) and a peripheral portion of a wafer surface (or a back surface). [Embodiment] The following is a view showing an outline of a wafer end face inspection device according to a first embodiment of the present invention. The rotatable holder, which is not illustrated, adsorbs and holds the wafer crucible, and the inspection position on the wafer crucible can be arbitrarily changed by rotating the holder. The imaging optical system 4 is disposed vertically above the outer peripheral portion 2 of the wafer surface, and the light from the outer peripheral portion 2 of the wafer surface and the surface inclined surface portion 3 is concentrated to cover the wafer end surface region (the wafer surface outer peripheral portion 2 and the inclined surface portion). 3) Image is imaged on a CCD or the like
5。 V 照明晶圓之照明光學系統係設有兩種類。一為周知之 落射照明光學系統，其係使在照明光學系統6產生之照明 光在半反射鏡反射而偏向，通過成像光學系統4之—部分 200907335 而照明晶圓1。另一者則係正對晶圓丨之端面配置，自傾 斜方向擴散照明晶圓1的擴散照明光學系統7。擴散照明 光學系統7係例如於基板上多數排列有led1丨者之表面配 置有擴散板12的面光源，係可自寬廣區域以各種角度照 明斜面部3。 此外’圖1雖係顯示檢查圖之上側之晶圓表面外周部 2及表面斜面部3的情形，但檢查圖之下側之晶圓背面外 周部2及背面斜面冑3的情形亦完全相同，此時，成像光 千系統4攝衫元件5、照明光學系統6係配置於下側（圖 1虛線之光學系統）。擴散照明光學系統係可共通使用於 上、下側之檢查。 以下敘述本A施形態之特徵。首先說明成像光學系統 表面斜面。15 3如圖1所示為傾斜，為了自垂直方向觀 察斜面全面需有較深之焦深。焦深之寬度最好有綱P 左右。為達成此目的，物鏡之ΝΑ I 0.05左右，且低倍率5. There are two types of illumination optics for V-illuminated wafers. An epi-illumination optical system is known which illuminates the wafer 1 by reflecting the illumination light generated by the illumination optical system 6 in a half mirror and deflecting it through a portion of the imaging optical system 4. The other is disposed on the end face of the wafer crucible, and diffuses the diffusion illumination optical system 7 of the illumination wafer 1 from the oblique direction. Diffusion illumination The optical system 7 is, for example, a surface light source in which a plurality of LEDs are arranged on the substrate with a diffusing plate 12, and the inclined surface portion 3 can be illuminated at various angles from a wide area. Further, although FIG. 1 shows the wafer surface outer peripheral portion 2 and the surface inclined surface portion 3 on the upper side of the inspection chart, the wafer back surface outer peripheral portion 2 and the back surface inclined surface portion 3 on the lower side of the inspection sheet are also identical. At this time, the imaging light system 4 and the illumination optical system 6 are disposed on the lower side (the optical system of the broken line in FIG. 1). The diffused illumination optical system can be commonly used for inspection of the upper and lower sides. The features of this A embodiment will be described below. First, the surface slope of the imaging optical system will be described. 15 3 is inclined as shown in Fig. 1. In order to observe the slope from the vertical direction, a deeper depth of focus is required. The width of the depth of focus is preferably around P. In order to achieve this, the objective lens is about 0.05, and the low magnification is
V 之遠心物鏡較為合適。藉由使用低倍率之物鏡，有一次可 檢查之區域較寬廣的優點。 不過，低倍率之物鏡，亦有能檢測出之缺陷尺寸僅限 於較大缺陷的缺點。當此會 微較高的物鏡。當使用例= ::’、= = 寬度―明光之波長物 斜面部3之僅一部分對焦的情事。為解 邊繼隹：ΓΓ影像處理技術係相當有效，其係-置—邊取得複數個影像，並自各影像僅操取 10 200907335 有聚焦之處來合成影像。 其次敘述照明光學系統。如先前戶斤述’晶圓1之表面 斜面部3係相對平坦部（晶圓表面外周部2)略呈傾斜的構 成，通常，此傾斜角為30度左右。因此’為了照明斜面 部須進行可自傾斜方向以各種角度照明的擴散照明。僅以 擴散照明光學系統7照明晶圓1時之攝影影像示於圖2。 此外’以下之圖中’對於與已於前圖所示之構成要素相同 的構成要素係賦予相同符號，省略其說明。 圖2令’藉由擴散照明明亮地照明晶圓之表面斜面部The telecentric objective of V is more suitable. By using a low magnification objective lens, there is a wide range of areas that can be inspected at one time. However, the low magnification objective lens also has the disadvantage that the size of the defect that can be detected is limited to a large defect. When this will be slightly higher objective lens. When using the example =::, = = width - wavelength of the light, only part of the slope 3 is focused. In order to solve the problem: ΓΓ ΓΓ 隹 隹 ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ ΓΓ Next, the illumination optical system will be described. As described above, the surface inclined surface portion 3 of the wafer 1 is slightly inclined with respect to the flat portion (wafer surface outer peripheral portion 2), and usually, the inclination angle is about 30 degrees. Therefore, in order to illuminate the bevel, diffused illumination that can be illuminated at various angles from the oblique direction is required. The photographic image when the wafer 1 is illuminated only by the diffusion illumination optical system 7 is shown in Fig. 2. In the following description, the same components as those shown in the previous drawings are denoted by the same reference numerals, and their description will be omitted. Figure 2 Let's brightly illuminate the surface of the wafer by diffuse illumination
而能檢測出損傷、雜質等缺陷。然而，由於無法照出平 垣之晶圓表面外周部2，因此此部分較暗而無法檢測出缺 陷。晶圓表面外周部2係與表面斜面部3連接之部分，由 '此。卩刀之缺有可能對表面斜面部3、以及頂點部造成 如#，因此最好亦同時檢測出晶圓表面外周部2之缺陷。 因此，本實施形態中，除了擴散照明光學系統7以外，亦 具備透過成像光學系統照明晶圓之落射照明光學系統。 同時使用擴散照明光學系統7與落射照明光學系統時 ，攝影影像例示於@ 3。藉由同時使^種類之照明系统 :同時照明晶圓表面外周部2與表面斜面部3，亦可同時 :洌出存在於晶圓表面外㈣2與表面斜面部3雙方之缺 、而此時因在影像上晶圓表面外周部2與名 馮連續，因此無法區別出雙 照 面 aH曰门 山文乃固此，本實施形| 月日曰圓表面外周部2之落 洛射…月先學系統與照明肩 11 200907335 。"之擴散照明光學系、統7係使用波長特性不同的光源。 例如使用素燈作為落射照明光學系統之光源，使用白色 咖作為擴散照明光學系統7之光源。當以白色led調整 白色平衡時，因鹵素燈之色溫度較白色低故會成為帶 紅色的照明。 使用上述照明光學系統時之攝影影像例示於圖4。圖4 中’晶圓表面外周冑2係被帶有紅色之白色照明，表面斜 面部3係被以白色照明。因此’晶圓表面外周舍"與表面 斜面部3之邊界8為明顯，在檢測出缺陷時，能瞬間判斷 该缺陷係存在於晶圓表面外周部2與表面斜面冑3之哪一 方。光源之選擇方法可考量出錢組合，但最好係先考量 易於晶圓表面外周冑2、以及表面斜面部3產生之缺陷後 再予以選擇。料，用以照明易產生較小之損傷或缺陷之 處的光源’最好係使用包含較多會因較小之損傷或缺陷而 易散射之短波長之光的光源。例如照明表面斜面部3之擴 散照明光學㈣7可使用藍色LED，照明晶圓表面外周部 2之落射照明光學系統可使用以㈣，或亦可於擴散昭 明光學系統7、^射照明光學系、統之兩方均使用白色LED， 再藉由濾光器改變雙方之波長特性。 晶圓中當晶圓表面外周部2與表面斜面部3非常平穩 地連接時’為了以上述擴散照明光學系統7與落射照明： 學糸統完全照明晶圓表面外周部與表面斜面部，即須使擴 散照明光學系、统7在晶圓厚度方向之長度l(參照_丄）增長 至非常長。然而因裝置之空間限制等而無法增長至某^程 12 200907335 度之長度以上’因此有可能有長度不足的問題。經實驗驗 證後’證實擴散照明光學系統7之長度L若為200mm左 右則會長度不足。當長度不足時，如圖5之例所示，晶圓 表面外周部2與表面斜面部3之邊界8附近變暗，而無法 檢測出此部分的缺陷。 解決此問題之方法說明如下。圖6，係顯示本發明之 第2實施形態之晶圓端面檢查裝置概要的圖。本實施形態， 係用以解決上述之邊界附近變暗問題的手段之一。本實施 形悲與圖1所不之第丨實施形態的差異點在於，使擴散照 明光學系統9彎曲構成且極力縮小與成像光學系統4間之 間隙。藉此，自成像光學系統4照明之落射照明的照明角 度與自擴散照明光學系统9照明之照明角度係大致連續地 連接’而能照明晶圓表面外周部2與表面斜面# 3之邊界 附近。 'j而為了構成如上述之彎曲之擴散照明光學系統9， 「月系統之構成會變得複雜，而亦有需花費較高成本的問 題因此α更簡易之構成減低晶圓表面外周部2與表面 斜面Ρ3之邊界8附近之較暗區域的方法，係顯示於圖7。 ±圖7,係顯示本發明之第3實施形態之晶圓端面檢查 t置概要的圖。太音& 本貫施形態與圖1所示第1實施形態之差 異點在於，除了圖1 之構成外，尚於成像光學系統4之外 周设有環狀照明朵風么w — 月光學系統之環照明1〇。 藉由環照明1 〇 + 了將洛射照明之照明角度與擴散照明之 明角度之差输请$ 、、減至某種程度，而能減低圖5中邊界8之 13 200907335 較暗區域。由於 * a 、 ‘忍月10為一般之市售產品，因此能以 更間易之構成減低問題。 ;衣’、、、明10之光源的波長特性可選擇與落射照明 :擴散照明之光源相同或相異之特性。當選擇相異波長特 之先源時，邊界部會被以異於晶圓表面外周部2、表面 斜面部3之色調拍攝，能更強調邊界部。 吏用圖8及圖9說明本發明之第3實施形態之變形例。 圖8所不之例中，係將兩個擴散照明光學系統7以既定角 度配置成「〈字」狀，使擴散照明光學系统7連接於成像 光學系統4以極力縮小與成像光學系统4之㈣。藉此， 可將落射照明之照明角度與擴散照明之照明角度之差縮減 至某種程度。 又’圖9所示之例中，係取代圖7所示之環照明1〇， 而於成像光學系統4與擴散照明光學系統7之間隙配置其 他擴散照明光學系統、擴散板或反射鏡7,。此種構成亦能 發揮同樣之效果。 除了上述實施形態以外，作為覆蓋晶圓端面部之構成， 當然亦可係擴散照明光學系統、擴散板、或反射板之所有 組合。 由於在擴散照明光學系統7及擴散照明光學系統7，設 有可驅動之機構’使此等可移動於圖9所示之箭頭方向， 因此可配合晶圓端面部（表面斜面部）之狀態調整至最適當 位置。 又，圖8，9中，由於擴散照明光學系統7,之端部係配 200907335 置於成像光學系統4之如端上側’而來自擴散照明光學李 統7, 7’之光束的一部分會被成像光學系統4之金屬物遮 蔽，因此無法充分照明晶圓平面部與斜面部的邊界附近。 因此，如圖10所示，當擴散照明光學系統7，之端部 位在成像光學系統4之前端（晶圓側）下側且該端部位於自 晶圓水平面（與晶圓表面外周部2相同之平面）起之高度η 的位置時，須將擴散照明光學系統7, 7，配置成擴散照明光 學系統7,之端部位於成像光學系統4之視野區域之單側區 域Si起之Hxtane，以上外側的位置，以避免自成像光學 系統4照射之落射照明的光束被該端部遮蔽。 晶圓表面外周部2血肩；rfj每。 Α ''、衣面斜面部3之邊界附近由於係 以曲率較大之曲線（例如m次函數所表現者）形成，因此 和用以照明晶圓表面外周部與表面斜面部之邊界附近(使其 不變暗)之成像光學系統與擴散照明光學系統之照明範圍 (對晶圓之照射角度）的關係，當 *如圖11所示將相對斜面部 ί . 之水平面的傾斜設為Θ、將成像弁風 π力乂1豕尤學系統之開口角一半設 為Θ ’時’只要照明從相 0 , 士日曰圓水平面（與晶圓表面外周部 2相同平面）之法線方向 如 s 日日圓表面外周部方向之傾斜角0， I、至法線方向往表面斜面邱古a 圍内的光線…•邊“ “向之傾斜角(2…，)範 曰圓表面外心邊 何種曲率的曲線（例如即使於 曰日0表面外周部2與斜面 能藉由成像光學系絲4 之間有大曲率的曲線），由於 …’、4而接收來自邊界、片夕τ 1+伞 因此晶圓表面外周部 逯界附近之正反射先， 暗。 /、面斜面部3之邊界附近不會變 15 200907335 亦卩藉此係從成像光學系統4進行照射，落射照明 月角度與自擴政照明光學系統7，7,照射之照明角度係 大致連續地連接。 田不使用落射照明光學系統，而照明前述之邊界 附：及表面斜面部3時，只要藉由擴散照明光學系統7, 7, 將彳之相對晶圓水平面之法 去線方向往表面斜面部3方向之傾 起之…Θ，)範圍内所有角度的光線，照射於邊 界附近及表面斜面部3之各點即可。 【圖式簡單說明】 月之第1實施形態之晶圓端面檢查裝 擴散照明光學系統照明晶圓時之攝影 圖1係顯示本發 置概要的圖。 圖2係顯示僅以 影像例的圖。 學二散.學一射㈣ 圖4係顯示使用擴散照明光學系統與 統之不同波長牲,w夕土、E + 、、、月九學糸 寺生之先源時之攝影影像例的圖。 擴散照明光學系統之長度不足時之攝影影 圖5係顯示 像例的圖。 端面檢查襄 圖6係顯示本發明之第2實施形態之晶圓 置概要的圖。 施形態之晶圓端面檢查裝It can detect defects such as damage and impurities. However, since the outer peripheral portion 2 of the wafer surface cannot be illuminated, the portion is dark and the defect cannot be detected. The portion of the wafer surface outer peripheral portion 2 that is connected to the surface slope portion 3 is made of this. The absence of the file may cause the surface bevel 3 and the apex portion to be as #, so it is preferable to simultaneously detect the defect of the outer peripheral portion 2 of the wafer surface. Therefore, in the present embodiment, in addition to the diffused illumination optical system 7, an epi-illumination optical system that illuminates the wafer through the imaging optical system is provided. When the diffused illumination optical system 7 and the epi-illumination optical system are used at the same time, the photographic image is exemplified at @3. By simultaneously illuminating the illumination system of the type: simultaneously illuminating the outer peripheral portion 2 of the wafer surface and the surface inclined surface portion 3, it is also possible to simultaneously: the absence of both the outer surface (4) 2 and the surface inclined surface 3 of the wafer surface, and In the image, the outer peripheral portion 2 of the wafer surface is continuous with the famous von, so it is impossible to distinguish the double-illuminated surface aH 曰 山 山 文 固 , , , , , , , , , , , , , , , 本 本 本 本 本 本 本 月 月 月 月 月 月 月 月 月Lighting shoulder 11 200907335. "The diffuse illumination optics and system 7 use light sources with different wavelength characteristics. For example, a plain lamp is used as a light source of the epi-illumination optical system, and a white coffee is used as a light source of the diffused illumination optical system 7. When white balance is adjusted with white led, the color of the halogen lamp will be reddish due to the lower temperature of white. A photographic image when the illumination optical system described above is used is exemplified in FIG. In Fig. 4, the wafer surface outer circumference 2 is illuminated with red white, and the surface slope 3 is illuminated in white. Therefore, the boundary 8 between the outer surface of the wafer surface and the surface inclined surface portion 3 is conspicuous, and when a defect is detected, it can be instantaneously determined which one of the outer peripheral portion 2 and the surface bevel surface 3 of the wafer surface exists. The method of selecting the light source can be considered as a combination of money, but it is preferable to consider the defects of the outer surface of the wafer surface 2 and the surface bevel 3 to be selected. The light source used to illuminate areas susceptible to minor damage or defects is preferably a light source comprising a plurality of short wavelength light that is susceptible to scattering due to minor damage or defects. For example, the diffusing illumination optics (4) 7 of the illumination surface bevel 3 can use a blue LED, and the epi-illumination optical system for illuminating the outer peripheral portion 2 of the wafer surface can be used (4), or can also be used to diffuse the Zhaoming optical system 7, and to illuminate the optical system. Both sides use white LEDs, and the wavelength characteristics of both sides are changed by the filter. In the wafer, when the wafer surface outer peripheral portion 2 and the surface slope portion 3 are connected very smoothly, 'in order to diffuse the illumination optical system 7 and the epi-illumination with the above-mentioned diffusion: the entire surface of the wafer surface and the surface slope portion are completely illuminated. The length l (see _丄) of the diffusion illumination optical system 7 in the thickness direction of the wafer is increased to a very long length. However, due to the space limitation of the device, etc., it cannot be increased to a length of more than 12,073,035 degrees. Therefore, there may be a problem of insufficient length. After the experimental verification, it is confirmed that the length L of the diffusion illumination optical system 7 is about 200 mm, and the length is insufficient. When the length is insufficient, as shown in the example of Fig. 5, the vicinity of the boundary 8 between the outer peripheral portion 2 of the wafer surface and the surface inclined surface portion 3 is darkened, and the defect of this portion cannot be detected. The solution to this problem is explained below. Fig. 6 is a view showing an outline of a wafer end face inspection device according to a second embodiment of the present invention. This embodiment is one of means for solving the above-mentioned problem of darkening near the boundary. The difference between this embodiment and the third embodiment shown in Fig. 1 is that the diffusion illumination optical system 9 is bent and the gap between the imaging optical system 4 and the imaging optical system 4 is minimized. Thereby, the illumination angle of the epi-illumination illuminated from the imaging optical system 4 is substantially continuously connected to the illumination angle illuminated by the self-diffusion illumination optical system 9, and the vicinity of the boundary between the outer peripheral portion 2 of the wafer surface and the surface bevel #3 can be illuminated. 'j, in order to form the diffused illumination optical system 9 as described above, "the structure of the moon system becomes complicated, and there is also a problem that it requires a relatively high cost. Therefore, the simpler configuration of α reduces the outer peripheral portion 2 of the wafer surface and The method of the dark region in the vicinity of the boundary 8 of the surface bevel 3 is shown in Fig. 7. Fig. 7 is a view showing the outline of the wafer end face inspection t according to the third embodiment of the present invention. The difference between the embodiment and the first embodiment shown in Fig. 1 is that, in addition to the configuration of Fig. 1, an annular illumination is provided on the outer periphery of the imaging optical system 4, and the ring illumination of the moon optical system is 1 〇. By ring illumination 1 〇 + the difference between the illumination angle of the projection illumination and the bright angle of the diffusion illumination is reduced to a certain extent, and the boundary of the boundary 8 of Figure 5 can be reduced by 13 200907335. * a , 'Ninja 10 is a general commercial product, so it can be reduced with a more convenient composition. The wavelength characteristics of the light source of clothing,,, and Ming 10 can be selected the same as the source of the diffuse illumination: diffused illumination or Different characteristics. When choosing different wavelengths When the source is used, the boundary portion is imaged at a different color from the outer peripheral portion 2 of the wafer surface 2 and the surface inclined surface portion 3, and the boundary portion can be more emphasized. A modification of the third embodiment of the present invention will be described with reference to FIGS. 8 and 9. In the example of FIG. 8, the two diffused illumination optical systems 7 are arranged in a "<" shape at a predetermined angle, and the diffused illumination optical system 7 is connected to the imaging optical system 4 to minimize the imaging optical system 4. (4). Thereby, the difference between the illumination angle of the epi-illumination and the illumination angle of the diffuse illumination can be reduced to some extent. In the example shown in FIG. 9, instead of the ring illumination shown in FIG. 7, another diffusing illumination optical system, a diffusing plate or a mirror 7 is disposed in the gap between the imaging optical system 4 and the diffused illumination optical system 7, . This composition can also exert the same effect. In addition to the above embodiment, as a configuration for covering the end face of the wafer, it is of course possible to use all combinations of the diffusion illumination optical system, the diffusion plate, or the reflection plate. Since the diffused illumination optical system 7 and the diffused illumination optical system 7 are provided with a driveable mechanism 'such that they can be moved in the direction of the arrow shown in FIG. 9, the state of the wafer end face (surface bevel face) can be adjusted. To the most appropriate location. Further, in Figs. 8 and 9, due to the diffusion illumination optical system 7, the end portion is equipped with 200907335 placed on the upper end side of the imaging optical system 4, and a part of the light beam from the diffused illumination optical system 7, 7' is imaged. Since the metal object of the optical system 4 is shielded, the vicinity of the boundary between the plane portion of the wafer and the inclined surface portion cannot be sufficiently illuminated. Therefore, as shown in FIG. 10, when the diffusion illumination optical system 7 is at the lower end of the front end (wafer side) of the imaging optical system 4, and the end portion is located at the wafer level (the same as the outer peripheral portion 2 of the wafer surface) When the position of the height η is raised, the diffusion illumination optical system 7, 7 is disposed as the diffusion illumination optical system 7, and the end portion is located at the Hxtane of the one-side region Si of the field of view of the imaging optical system 4, The outer position is such that the beam of the epi-illumination illuminated from the imaging optical system 4 is shielded by the end. Wafer surface outer peripheral portion 2 blood shoulder; rfj per. Α '', the vicinity of the boundary of the slanted face 3 is formed by a curve with a large curvature (for example, expressed by the m-th order function), and thus is used to illuminate the vicinity of the boundary between the outer peripheral portion of the wafer surface and the surface inclined surface (so that The relationship between the imaging optical system and the illumination illumination system (the angle of illumination to the wafer) of the diffused illumination optical system, when * is as shown in Fig. 11, the inclination of the horizontal plane of the opposite oblique surface is set to Θ, Imaging 弁 π force 乂 1 豕 学 系统 系统 系统 一半 一半 一半 一半 一半 一半 一半 一半 时 时 时 时 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要The inclination angle of the outer peripheral surface of the yen surface is 0, I, the light in the direction of the normal direction to the surface of the surface of the surface of the acupoint... • "" The curve (for example, even if the outer peripheral portion 2 and the inclined surface of the surface of the next day 0 can have a large curvature curve between the imaging optical filaments 4), the reception is from the boundary, the wafer τ 1+ umbrella due to ...', 4 Positive reflection near the outer perimeter of the circular surface/, the vicinity of the boundary of the face inclined face 3 does not change 15 200907335 Also by this, the illumination is performed from the imaging optical system 4, and the angle of the illumination illumination moon and the self-expanding illumination optical system 7, 7 are substantially continuous. connection. The field does not use the epi-illumination optical system, and when illuminating the aforementioned boundary: and the surface slanting surface 3, as long as the diffuse illumination optical system 7, 7, the direction of the wafer relative to the wafer level is directed to the surface slope 3 The direction of the tilting ... Θ,) all angles of light in the range, can be illuminated near the boundary and the surface of the slope 3. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing an outline of the present invention. Fig. 2 is a view showing only an example of an image. Learn to disperse. Learn to shoot (4) Figure 4 is a diagram showing an example of a photographic image using a diffuse illumination optical system and a different wavelength of the system, the original image of the earth, the E + , and the ninth. Photograph 5 of the case where the length of the diffused illumination optical system is insufficient is shown as an example of the image. (End face inspection) Fig. 6 is a view showing an outline of a wafer according to a second embodiment of the present invention. Wafer end inspection inspection
圖7係顯示本發明之第3實 置概要的圖D 16 200907335 圖8係顯示本發明之第3實施形態之變形例的圖。 圖9係顯示本發明之第3實施形態之變形例的圖。 圖1 0係顯示本發明之第3實施形態之變形例之擴散照 明光學系統與成像光學系統之配置的圖。 圖1 1係說明本發明之落射照明光學系統與擴散照明光 學系統之照明的圖。 主要元件符號說明 1 晶圓 2 晶圓表面外周者[5 3 斜面部 4 成像光學系統 5 攝影元件 6 照明光學系统 7 擴散照明光學系 7， 擴散照明光學+ 8 晶圓表面外周部 9 擴散照明光學李 10 環照明 11 LED 12 擴散板 、统、擴散板或反射鏡 統 17Fig. 7 is a view showing a third embodiment of the present invention. D 16 200907335 Fig. 8 is a view showing a modification of the third embodiment of the present invention. Fig. 9 is a view showing a modification of the third embodiment of the present invention. Fig. 10 is a view showing the arrangement of a diffusion illumination optical system and an imaging optical system according to a modification of the third embodiment of the present invention. Fig. 1 is a view showing the illumination of the epi-illumination optical system and the diffused illumination optical system of the present invention. Main component symbol description 1 Wafer 2 Wafer surface peripheral [5 3 Inclined face 4 Imaging optical system 5 Photographic element 6 Illumination optical system 7 Diffusion illumination optical system 7, Diffusion illumination optics + 8 Wafer surface peripheral portion 9 Diffusion illumination optics Li 10 ring lighting 11 LED 12 diffuser, system, diffuser or mirror system 17