TW200905733A - Apparatus and method for manufacturing semiconductor, and electronic equipment - Google Patents

Apparatus and method for manufacturing semiconductor, and electronic equipment Download PDF

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Publication number
TW200905733A
TW200905733A TW097128703A TW97128703A TW200905733A TW 200905733 A TW200905733 A TW 200905733A TW 097128703 A TW097128703 A TW 097128703A TW 97128703 A TW97128703 A TW 97128703A TW 200905733 A TW200905733 A TW 200905733A
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Taiwan
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gas
semiconductor manufacturing
reactor
supplied
supply pipe
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TW097128703A
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Chinese (zh)
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Yoshimi Shioya
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Nanomaterial Lab Co Ltd
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Publication of TW200905733A publication Critical patent/TW200905733A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light

Abstract

The apparatus and method are about manufacturing semiconductor wafers using reaction gases that are easier to be cut than that of other functional groups. A typical embodiment is to process the reaction gas to become a siloxane gas having OC2H5 or OCH3 radicals, and then let the siloxane gas to combine with the left-behind oxygen after it is separated from the C2H5 radical, or to react with C2H5, OC2H5 or OCH3 radicals, to form low dielectric film or insulating barrier film.

Description

200905733 九、發明說明： 【發明所屬之技術領域】 本發明係有關於半導體製造裝置、半導體製造方法及電子 機器’特別是，有關於在不使用氧化劑之下製造半導體晶圓之 半導體製造裝置、半導體製造方法及電子機器。 【先前技術】 以在藉由電漿化學氣相沉積(Chemical vapor deposition ; CVD)在半導體元件上形成多孔性低介電率膜（L〇w_k膜）時， 一般都採用具曱氧基或乙氧基之甲基矽烷氣體或曱基矽烷氣體 的反應氣體。 此外’藉由電漿化學氣相沉積(Chemical vapor deposition ; CVD)在半導體元件上形成銅膜絕緣物阻隔膜時，一般都採用組 合曱基石夕烧氣體和n2o氣体而成的反應氣體。 【發明内容】 【本發明所欲解決的課題】但上述反應氣體的問題在於， 多孔性低介電率膜和絕緣物阻隔膜，都只能限定性的降低介電 率，且無法獲得充分的機械強度。 具體而言，多孔性低介電率膜的介電率，頂多只能下降26 左右；此外，機械強度也不到楊氏模量5Gpa;另一方面，銅絕 緣阻隔膜的膜厚變薄到200〜3GGA時，便會降低機械強度；此 外，銅絕緣阻隔臈如果在揚氏模量2〇GPa〜6〇Gpa而介電率未 超過5.5以上的話，便會有不具防止銅擴散能力的問題；這是因 200905733 使用上述反應氣體時’無法在乡孔性低介電麵和絕緣物阻隔 膜上控制碳含量及氮含量所致。 疋故，本發明之課題在於，多孔性低介電率膜和絕緣物阻 隔膜間的低介電率化，與提升機械強度。 【用以解決課題之手段】為了解決上述課題，本發明之半 導體製造裝置’係具備··藉由讓反應基比其他官能團更容易被 切斷的反應氣體，來處理製造標的為半導體晶圓之手段。 利用更容易被切斷的反應基的反應氣體後，藉由增加該反 應基的切斷量’讓已切斷反應基的反應纽，卵L端或氧端會 相互結合。 具體而言，例如：乙基的結合力比甲基弱，因而更容易被 切斷；如此一來，增加反應氣體的分子結合量，有助於多孔性 低介電率膜和絕緣物阻隔膜間的低介電率化，與提升機械強度。 換5之，本發明的典型例為，將反應氣體本身，製作為具 有0(¾基或OCH3基等之砂氧院氣體之反應氣體，經由和脫 離（¾基等後留下來的氧⑼的相互結合、或經由與阳5 基與〇嗯基或⑽3基的反應，來形成低介電率膜或絕緣物 阻隔膜；再者’連同魏魏體’採用以曱魏氣體為反應氣 體後，因為可調整矽膠、氧及碳的比率，所以可輕鬆控制多孔 性低介電率膜和絕緣物阻隔膜間的介電率及機械強度，還可以 形成具許多密閉型空孔的低介電率膜，利用在絕緣物阻隔膜内 混入碳或氮，來相對降低介電率，且可提高銅阻隔性與機械強 度。 200905733 如此一來，介電率降低了，且可製得能承受化學機械研磨 (Chemical Mechanical P〇lishing/Planarizati〇n ; CMP)製程的、及 具大機械強度低介電率膜的晶圓，並可形成介電率相對較低、 防止銅擴散能力高的絕緣物阻隔膜。 該反應氣體包含矽氧烷氣體、曱基矽烷氣體、或曱矽烷氣 體’其中’曱氧基、乙氧基、N_丙氧基、或乙基的數目，在該 各氣體内的甲基的數目以下即可；此時，反應氣體的矽氧烷氣 體，可以是鎖狀矽氧烷氣體，也可是環狀矽氧烷氣體，甚至也 可以是將這些予以混合後的氣體；此外，反應氣體也可以是矽 氧烧氣體、曱基石夕烧氣體與甲石夕烧氣體中的至少任2種氣體予 以混合後的氣體；此外，也可將〇H基、曱氧基、乙氧基、N_ 丙氧基、或具乙基的碳氫化合物氣體製作為反應氣體。 再者’該反應氣體的含氧或碳之反應基的比率以2〇%〜35 %為佳；此比率為針對整個反應氣體所設的比率；因此以混合 環狀矽氧烧氣體為例，並不是說甲氧基數為5、則曱基數就非存 在3種氣體不可。 此外，本發明具備有：在實施前述處理之半導體晶圓上照 射紫外線之手段；此時，該各手段可設置於相同反應器上，也 可設置於不同反應器上。 再者’本發明之半導體製造方法，係藉由讓反應基比其他 官能團更容易被切斷的條件下的反應氣體，來處理製造標的為 半導體晶圓的方法。 此外’本發明之半導體晶圓； 200905733 介電率為2.0〜2.5 ; 揚氏模量為5〜8GPa ; 具有：藉由讓反應基比其他官能團更容易被切斷的狀態下 之反應氣體的電漿CVD所製造之低介電率膜。 此外’本發明之半導體晶圓； 介電率為3.5〜5.5 ; 厚度為200〜400A ; 波長為具6328 A的光，屈光率在1.7以上； 形成於銅膜上； 具有.藉由使用讓反應基比其他官能團更容易被切斷的條 件下之反應氣體的電漿化學氣相沉積（Chemical vap〇r deposition ; CVD)所製造之絕緣物阻隔膜。 【實施方式】 以下將參閱圖式以說明本發明之實施型態；再者，各圖上 的相同部分，用相同符號加以標示。 (實施型態1) 第i圖為本發明實施型態丨之半導體製造裝置模式結構 圖；本實施型態，主要是以改善低介群_較來加以說明。 第1圖中顯示者，包含：容納晶圓的周向環(h〇〇p)41、從周 向環取出以定位晶圓的晶圓對準(alignment)42 ;具承載 (bad-bck»構減壓反應器的承载反應器43 ;對晶圓西己線連接孔 200905733 形成絕緣物阻隔膜，以處理電漿化學氣相沉積(Chemical vap〇r deposition; CVD)處理等的第一反應器丨；在形成於第一反應器 1的絕緣物阻隔膜上，照射紫外光的第二反應器2 ;在承載反應 器43與第一反應器1和第二反應器2之間，具備傳送晶圓之機 械手臂的傳送反應(transfer chamber)44。 第2圖為第1圖第一反應器i模式結構圖；第2圖中所示 用來作為各種氣體的供給管，包含：Dieth〇Xy Tetramethyldisiloxane ( ( 〇C2H5) ( CH3) 2Si-0-Si ( OC2H5) ( CH3) 2)氣體供給管 1021、Dimethoxy Tetramethyldisiloxane( (〇CH3) (CH3) 2Si-0-Si (0CH3) (CH3) 2)氣體供給管 i〇22、H20 氣體供給管1023、〇2氣體供給管1024、％氣體供給管1〇25、 Ar氣體供給管1026、He氣體供給管i〇27、>JF3氣體供給管1〇28。 此外，第2圖中所示者’包含：連接這些各供給管1〇21〜 1028的閥1032及質量流量1〇31 ;設置於第一反應器 1上部的 紹板1065，設置於紹板1〇65附近的氧化紹（a12〇3)絕緣體 1066 ;排放第一反應器1内部氣體的排氣閥1〇14 ;連接於排氣 閥1014的排氣幫浦1015;位於昇降載物台上以加熱晶圓7而從 絕緣物（A1N)構成之加熱器6 ;受理透過傳送反應器44傳送 之晶圓7的接腳8 ;用透過各供給管1〇21〜1〇28供給到第一反 應器1内的氣體’對晶圓7喷霧的氣洗室1〇61 ;設置於加熱器 ό的下部電極1062;同時兼用下部電極1〇62及氣洗室（air shower)1061，而連接於上部電極(接地)的38〇〜42〇KHz共振 腔 1064 ;及 13.56MHz 共振腔 1063。 第3圖為第1圖之第二反應器2模式結構圖；第3圖中所 200905733 示者有： ，射紫外光的低壓水銀燈、Xe準分子燈等數 ） 燈官3 ;從減壓時的應力中保護各# 觸氧氣的石英管4 ;及測量供給_止各燈管3接 活性氣體或與空氣5;與連續性定央;*4ΓΛ(Ν2)氣等不 之照射光照度的石英管4内、或安^第間^來自於燈管^ 光感測以對第二反應器2内供給氮氣的配管η ;處理晶圓7 後用於供應清理第二反應器2内的氧（〇2)氣配管12 ;在各配 管1卜=與壓力桶之間設_門14、透過各配管η、12測量 耽體流重’同時依據測量結果控侧門14開閉的質量流量13; 再者’也可視其需要’將氮之外的不活性氣體供給至第二反應 器2内UU卜’也可-個準備兼作第—反應器丨與第二反應器2 之用的反應器。 接下來，將說明第1圖所示之半導體製造裝置處理程序； 在本實施型態中，先以未出示圖式的無塵機内化學氣相沉積 (Chemical vapor deposition ; CVD)裝置中容納於於周向環41的 狀態下’傳送形成例如配線圖樣或配線連接孔的12吋晶圓7 後，從周向環41取出晶圓7再運往晶圓對準(wafer alignment)42 端。 晶圓對準42定位晶圓7後，晶圓7會先被傳送到第一反應 器1 ’再傳送到承載反應器43。 接下來’將承載反應器43内減壓；當承載反應器43内呈 希望的壓力後’即開啟隔開承載反應器43與傳送反應器44間 的閘閥。 200905733 晶圓7被傳送至傳送反應器44内，再相繼透過傳送反應器 44内的機械手臂，將晶圓7從承載反應器43内傳送至第一反靡 器1内。 ~ 為了在在第一反應器1中將晶圓7加熱，而將加熱器6加 熱至200〜4〇〇。(：範圍（例如：350。〇 ;接下來，事先對固定式 加熱器6 ’將晶圓7掛載於位在上部的接腳8後，降下接腳8， 再將晶圓7掛載於加熱器6上；或事先降低活動式加熱器6，將 晶圓7掛載於接腳8後，升高加熱器6，讓晶圓7掛载於加熱器 6上；第一反應器已啟動排氣幫浦1015，且開啟排氣閥1014後 排除第一反應器1内氣體。 在這種狀態下’藉由質量流量1031控制開啟閥1032，以 50〜150cc/min範圍（例如：i〇〇cc/min)對透過供給管1〇22、 第一反應器 1 内供給 DimethoxyTetramethyldisiloxane 氣体。 其結果為，供給的氣體會透過氣洗室1061而對晶圓7噴霧 後，持續維持200〜400〇C (例如：350°C )的晶圓溫度，再將壓 力s周整為250〜300Pa (例如：266Pa)後施加600〜650W (例 如.632W)電漿功率；在晶圓7上則形成低介電率膜；接下來， 關閉閥門1032，以停止供給Dimeth〇xy 丁伽⑽卿論^㈣^氣 体；再者，在上述括弧條件下所形成的低介電率膜為，介電率 約2.60、楊氏模量約5GPa。 接下來，透過傳送反應器44内的機械手臂，將晶圓7從第 一反應器1傳送到第二反應器2。 在，一反應器2中，將加熱器6加熱到2〇〇〜4〇〇。匚範圍（例 如.350 C)，接下來’在加熱器6上掛載晶圓7 ;帛二反應器 11 200905733 2已開啟排氣幫浦1〇15，且開啟排氣閥1〇14，並以第二反應器 2内σ[5壓力為〜3〇〇pa (例如：i%pa)的條件下進行排氣； 接下來，流動100〜3〇〇cc/min (例如：2〇〇cc/min) N2氣体且 透過燈管3，以30〜120S範圍（例如：6〇s)照射例如波長185 + 254Nm、功率10mW/Cm2的低壓水銀光，以進行晶圓7的紫 卜線退火處理，再者，以上述括弧條件所形成的低介電率膜，' 其介電率約降低至2.47，且未出現介電率的時間變化；此外， 低介電率膜的揚氏模量約上升至8GPa。 f 另一方面，取出晶圓7後則清理第一反應器i ;具體而言， 藉由質量流量1031的控制以開啟閥門1032,再透過供給管 1024、1026、1027’對第一反應器1内供給約1〇〇cc/mirU^量的 Ar氣體、約2〇〇cc/min流量的&氣體、約4〇〇cc/min流量的NR 氣體所混合的氣體；此時，開啟排氣幫浦1〇15，且開啟排氣闕3 1014，以排除第一反應器丨内的氣體；排氣時的第一反應器工 内部壓力約為〇·5〜l.OTorr即可；在這種狀態下，各開啟共振腔 1063與1064，對上部電極1061、下部電極1〇62各施加 I, 13.56MHz ’ 600W、及、400KHz，300W 功率以產生電漿。 (變形例1) 替代既述的供給 Dimethoxy Tetramethyldisiloxane，透過供 給管1021以50〜150cc/min範圍（例如：i〇0cc/min)供給 Diethoxy Tetramethyldisiloxane氣体的同時，也可透過供給管 1027以10〜l〇〇cc/min範圍（例如：50cc/min)供給He氣体； 此時的溫度條件、壓力條件等，皆同於既述條件即可。 用這種反應氣體所形成的低介電率膜為，介電率約2 6〇、 12 200905733 揚氏模量約5Gpa ;此外，在第二反應器2中對晶圓7實施同於 既述條件的處理後，低介電率膜則呈介電率約下降至2 46、介 電率未出現時間上的變化；此外，此低介電率膜的楊氏模量約 提升至8GPa。 (變形例2) 將透過供給管1022供給的氣體種類，從Dimeth〇xy200905733 IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and an electronic apparatus. In particular, there is a semiconductor manufacturing apparatus and a semiconductor for manufacturing a semiconductor wafer without using an oxidizing agent. Manufacturing method and electronic equipment. [Prior Art] When a porous low dielectric film (L〇w_k film) is formed on a semiconductor element by plasma chemical vapor deposition (CVD), a methoxy group or a B group is generally used. A reactive gas of an oxymethyl decane gas or a mercapto decane gas. Further, when a copper film insulator barrier film is formed on a semiconductor element by plasma chemical vapor deposition (CVD), a reaction gas obtained by combining a ruthenium base gas and an n2o gas is generally used. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, the problem of the above reaction gas is that the porous low dielectric film and the insulating barrier film can only reduce the dielectric constant in a limited manner, and cannot obtain sufficient Mechanical strength. Specifically, the dielectric constant of the porous low-dielectric film can only be reduced by about 26 at most; in addition, the mechanical strength is not as high as the Young's modulus of 5 Gpa; on the other hand, the film thickness of the copper insulating barrier film is thin. When it reaches 200~3GGA, it will reduce the mechanical strength. In addition, if the dielectric barrier of copper insulation barrier is 2〇GPa~6〇Gpa and the dielectric constant does not exceed 5.5, there will be no ability to prevent copper diffusion. Problem; this is due to the failure to control the carbon content and nitrogen content on the low porosity dielectric surface and the barrier film of the insulator when using the above reaction gas in 200905733. Accordingly, an object of the present invention is to improve the dielectric constant between a porous low dielectric film and an insulating barrier film and to improve mechanical strength. [Means for Solving the Problem] In order to solve the above problems, the semiconductor manufacturing apparatus of the present invention includes a reaction gas which is more easily cleaved by a reactive group than other functional groups, and processes the target semiconductor wafer. means. After the reaction gas of the reaction group which is more likely to be cleaved, the reaction amount of the reaction group is cut by increasing the amount of cut of the reaction group, and the L terminal or the oxygen end of the egg is bonded to each other. Specifically, for example, the bonding strength of the ethyl group is weaker than the methyl group, and thus it is easier to be cut; thus, increasing the molecular binding amount of the reaction gas contributes to the porous low dielectric film and the insulating barrier film. The low dielectric constant between the two, and the increase in mechanical strength. In the case of the fifth aspect of the present invention, the reaction gas itself is produced as a reaction gas having a 0-(4⁄4-based or OCH3-based, aerobic gas, etc., via and from the oxygen (9) remaining after the 3⁄4 base or the like. Forming a low dielectric film or an insulating barrier film by mutual reaction, or by reacting with a cation 5 group and a ruthenium group or a (10) 3 group; and further, after using Wei Wei gas as a reaction gas, Since the ratio of silicone, oxygen and carbon can be adjusted, the dielectric constant and mechanical strength between the porous low dielectric film and the insulating barrier film can be easily controlled, and a low dielectric constant with many closed cells can be formed. The film uses carbon or nitrogen mixed in the insulating barrier film to relatively lower the dielectric constant, and can improve the copper barrier property and mechanical strength. 200905733 As a result, the dielectric constant is lowered and the chemical mechanical mechanical strength can be obtained. Grinding (Chemical Mechanical Plylishing/Planarizati〇n; CMP) process and wafers with large mechanical strength and low dielectric film, and can form insulator barriers with relatively low dielectric constant and high copper diffusion resistance. Membrane The number of the decyloxy group, the decyl decane gas, or the decane gas 'wherein' methoxy group, ethoxy group, N-propoxy group, or ethyl group is less than the number of methyl groups in the respective gases. In this case, the helioxane gas of the reaction gas may be a lock-type helioxane gas or a cyclic helioxane gas, or even a gas obtained by mixing these; in addition, the reaction gas may be a gas obtained by mixing at least two kinds of gases, such as a neon-burning gas, a sulfhydryl sulphur gas, and a ceramsite gas; or a cerium H group, a decyloxy group, an ethoxy group, or an N-propoxy group. Or a hydrocarbon gas having an ethyl group as a reaction gas. Further, the ratio of the oxygen- or carbon-containing reaction group of the reaction gas is preferably 2% to 35%; the ratio is set for the entire reaction gas. Therefore, in the case of a mixed annular helium-oxygen gas, it is not said that the number of methoxy groups is 5, and the number of ruthenium groups is not such that three kinds of gases are not available. Further, the present invention is provided with a semiconductor wafer in which the foregoing treatment is performed. a means of illuminating ultraviolet light; at this time, The means may be provided on the same reactor or on different reactors. Further, the semiconductor manufacturing method of the present invention is a reaction gas under conditions in which the reactive group is more easily cleaved than other functional groups. Processing a method of manufacturing a semiconductor wafer. Further, the semiconductor wafer of the present invention; 200905733 has a dielectric constant of 2.0 to 2.5; Young's modulus is 5 to 8 GPa; and has: by making the reactive group easier than other functional groups a low dielectric film produced by plasma CVD of a reaction gas in a cut state. Further, the semiconductor wafer of the present invention has a dielectric constant of 3.5 to 5.5; a thickness of 200 to 400 A; and a wavelength of 6328 A. Light, refractive index of 1.7 or more; formed on a copper film; having a chemical vapor deposition by using a reaction gas under conditions in which the reactive group is more easily cleaved than other functional groups (Chemical vap〇r deposition) ; CVD) manufactured by an insulating barrier film. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention; this embodiment is mainly described by improving a low-medium group. The figure shown in FIG. 1 includes: a circumferential ring (h〇〇p) 41 for accommodating the wafer, a wafer alignment for taking out the wafer from the circumferential ring, and a bearing (bad-bck) decompression reaction Carrying the reactor 43; forming an insulating barrier film on the wafer Xihex wire connecting hole 200905733 to process the first reactor 电 of the plasma chemical vapor deposition (CVD) treatment; a second reactor 2 for irradiating ultraviolet light on the insulator barrier film of the first reactor 1; and a robot arm for transferring the wafer between the carrier reactor 43 and the first reactor 1 and the second reactor 2 Transfer chamber 44. Fig. 2 is a first reactor i mode structure diagram of Fig. 1; and Fig. 2 is a supply tube for various gases, including: Dieth〇Xy Tetramethyldisiloxane ((〇C2H5) (CH3) 2Si-0-Si ( OC2H5) ( CH3) 2) Gas supply pipe 1021, Dimethoxy Tetramethyldisiloxane ((〇CH3) (CH3) 2Si-0-Si (0CH3) (CH3) 2) Gas supply pipe i〇 22. H20 gas supply pipe 1023, 〇2 gas supply pipe 1024, % gas supply pipe 1 〇 25, Ar gas supply The pipe 1026, the He gas supply pipe i〇27, and the JF3 gas supply pipe 1〇28. In addition, the one shown in Fig. 2 includes: a valve 1032 and a mass flow rate 1 for connecting the respective supply pipes 1〇21 to 1028. 〇31; a plate 1065 disposed on the upper portion of the first reactor 1, an oxide (a12〇3) insulator 1066 disposed near the 1〇65 of the plate; and an exhaust valve 1〇14 for discharging the gas inside the first reactor 1 An exhaust pump 1015 connected to the exhaust valve 1014; a heater 6 formed on the lift stage to heat the wafer 7 from the insulator (A1N); and receiving the wafer 7 transferred through the transfer reactor 44 a pin 8; a gas washing chamber 1〇61 for spraying the gas 7 supplied to the first reactor 1 through the respective supply tubes 1〇21 to 1〇28; and a lower electrode 1062 provided at the heater crucible At the same time, the lower electrode 1〇62 and the air shower 1061 are used together, and the 38〇~42〇KHz resonant cavity 1064 connected to the upper electrode (ground) and the 13.56MHz resonant cavity 1063 are used together. Fig. 3 is the first The second reactor 2 mode structure diagram of the figure; the 200905733 of the figure 3 shows: low-pressure mercury lamp, Xe excimer lamp, etc. that emit ultraviolet light Lamp officer 3; protects the quartz tube 4 of each oxygen from the stress during decompression; and measures the supply _ the lamps 3 are connected to the active gas or with the air 5; and the continuity center; *4 ΓΛ (Ν 2) gas In the quartz tube 4 that does not illuminate the illuminance, or from the tube, the light is sensed to supply the nitrogen to the second reactor 2, and the wafer 7 is used to supply the second. Oxygen (〇2) gas pipe 12 in the reactor 2; _ door 14 is provided between each pipe 1 and the pressure tank, and the body flow weight is measured through each pipe η, 12 while controlling the side door 14 according to the measurement result. The mass flow rate 13 of the opening and closing; in addition, 'there may be 'there is a need to supply the inert gas other than nitrogen to the second reactor 2 UU' can also be used as both the first reactor and the second reactor 2 The reactor used. Next, the processing procedure of the semiconductor manufacturing apparatus shown in FIG. 1 will be described. In the present embodiment, the chemical vapor deposition (CVD) apparatus is not included in the chemical vapor deposition (CVD) apparatus. In the state of the circumferential ring 41, after the 12-inch wafer 7 having a wiring pattern or a wiring connection hole is formed, the wafer 7 is taken out from the circumferential ring 41 and transported to the wafer alignment 42 end. After wafer alignment 42 locates wafer 7, wafer 7 is first transferred to first reactor 1' and then to carrier reactor 43. Next, the pressure inside the reactor 43 will be reduced; when the desired pressure in the reactor 43 is carried, the gate valve between the carrier reactor 43 and the transfer reactor 44 is opened. 200905733 Wafer 7 is transferred into transfer reactor 44 and passed through a robotic arm in transfer reactor 44 to transfer wafer 7 from carrier reactor 43 to first reactor 1. ~ In order to heat the wafer 7 in the first reactor 1, the heater 6 is heated to 200 to 4 Torr. (: range (for example: 350. 〇; next, the wafer 7 is mounted on the upper pin 8 in advance for the fixed heater 6', the pin 8 is lowered, and the wafer 7 is mounted on the wafer 7 On the heater 6; or lowering the movable heater 6 in advance, after mounting the wafer 7 on the pin 8, raising the heater 6 to mount the wafer 7 on the heater 6; the first reactor has started The exhaust pump 1015, and the gas in the first reactor 1 is removed after the exhaust valve 1014 is opened. In this state, the opening valve 1032 is controlled by the mass flow 1031 to be in the range of 50 to 150 cc/min (for example: i〇) 〇cc/min) The DimethoxyTetramethyldisiloxane gas is supplied into the first reactor 1 through the supply pipe 1〇22. As a result, the supplied gas passes through the air washing chamber 1061 and is sprayed on the wafer 7, and is maintained at 200 to 400 〇. The wafer temperature of C (for example, 350 ° C) is then applied to a plasma power of 600 to 300 Pa (for example, 266 Pa) and a plasma power of 600 to 650 W (for example, .632 W); Dielectric rate film; next, the valve 1032 is closed to stop the supply of Dimeth〇xy Dingga (10) Qing ^ (4) ^ gas; The low dielectric film formed under the above-mentioned bracketing conditions has a dielectric constant of about 2.60 and a Young's modulus of about 5 GPa. Next, the wafer 7 is transferred from the first reactor 1 through a robot arm in the transfer reactor 44. Transfer to the second reactor 2. In a reactor 2, the heater 6 is heated to 2 〇〇 to 4 〇〇. 匚 range (for example, .350 C), followed by 'mounting the crystal on the heater 6 Round 7; 帛2 reactor 11 200905733 2 The exhaust pump 1〇15 has been opened, and the exhaust valve 1〇14 is opened, and the σ[5 pressure in the second reactor 2 is ~3〇〇pa (for example: Exhaust under the condition of i%pa); next, flow 100~3〇〇cc/min (for example: 2〇〇cc/min) N2 gas and pass through the lamp tube 3, in the range of 30~120S (for example: 6 〇 s) irradiating, for example, a low-pressure mercury light having a wavelength of 185 + 254 Nm and a power of 10 mW/cm 2 for performing a violet-line annealing treatment of the wafer 7, and further, a low-dielectric film formed by the above-described bracketing conditions, The electrical conductivity is reduced to about 2.47, and there is no time variation of the dielectric constant; in addition, the Young's modulus of the low dielectric film rises to about 8 GPa. f On the other hand, after the wafer 7 is taken out The first reactor i is cleaned; specifically, the valve 1032 is opened by the control of the mass flow 1031, and the first reactor 1 is supplied with about 1 〇〇 cc/mirU^ through the supply pipes 1024, 1026, 1027'. Ar gas, gas of about 2 cc / min flow & gas, NR gas of about 4 〇〇 cc / min flow; at this time, open the exhaust pump 1 〇 15, and open the exhaust 阙3 1014, to exclude the gas in the first reactor crucible; the first reactor internal pressure during the exhaust is about 〜·5~l.OTorr; in this state, each open the resonant cavity 1063 and 1064 I, 13.56 MHz '600 W, and 400 KHz, 300 W power were applied to each of the upper electrode 1061 and the lower electrode 1〇62 to generate plasma. (Modification 1) Instead of the above-described supply of Dimethoxy Tetramethyldisiloxane, Diethoxy Tetramethyldisiloxane gas may be supplied through the supply pipe 1021 in a range of 50 to 150 cc/min (for example, i 〇 0 cc/min), and may also be passed through the supply pipe 1027 to 10 l. He gas is supplied in a range of 〇〇 cc / min (for example, 50 cc / min); the temperature conditions, pressure conditions, and the like at this time are the same as those described above. The low dielectric film formed by using the reactive gas has a dielectric constant of about 2 6 〇, and a 2009 cn, a Young's modulus of about 5 GPa. Further, in the second reactor 2, the wafer 7 is the same as described above. After the conditional treatment, the low dielectric film exhibited a dielectric constant of about 2 46, and the dielectric rate did not change over time; in addition, the Young's modulus of the low dielectric film increased to about 8 GPa. (Modification 2) The type of gas supplied through the supply pipe 1022 from Dimeth〇xy

Tetramethyldisiloxane 氣体換成 Tetramethylsilane (CH3)4Si 氣 体；接下來，透過供給管1021，以50〜150cc/min範圍（例如： 75cc/min)供給 Diethoxy Tetramethyldisiloxane 氣体、且透過供 給管1022 ’以10〜50cc/min範圍（例如：25cc/min)供給Tetramethyldisiloxane gas is replaced by Tetramethylsilane (CH3)4Si gas; next, Diethoxy Tetramethyldisiloxane gas is supplied through the supply pipe 1021 in a range of 50 to 150 cc/min (for example, 75 cc/min), and 10 to 50 cc/min is supplied through the supply pipe 1022'. Range (eg 25cc/min) supply

Tetramethylsilane的同時，也可透過供給管1〇27以1〇〜 100cc/min範圍（例如：50cc/min)供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.58、楊氏模量約5Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.45、介電率未出現時間上的變化；此外，此低介電率膜的楊氏 模量約提升至8GPa。 (變形例3) 將透過供給管1022供給的氣體種類，從Dimethoxy Tetramethyldisiloxan 氣体換成 Diethoxydimethylsilane (OCzHWCHASi氣体；接下來，透過供給管1〇21以50〜 150cc/min 範圍（例如：75cc/min )供給 DiethoxyAt the same time as Tetramethylsilane, He gas can be supplied through the supply pipe 1〇27 in a range of 1 〇 to 100 cc/min (for example, 50 cc/min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.58 and a Young's modulus of about 5 GPa. Further, after the wafer 7 is subjected to the same conditions as described above in the second reactor 2 The low dielectric film has a dielectric constant of about 2.45, and the dielectric constant does not change in time; in addition, the Young's modulus of the low dielectric film is raised to about 8 GPa. (Variation 3) The gas type supplied through the supply pipe 1022 is changed from Dimethoxy Tetramethyldisiloxan gas to Diethoxydimethylsilane (OCzHWCHASi gas; next, supplied through the supply pipe 1〇21 in a range of 50 to 150 cc/min (for example, 75 cc/min). Diethoxy

Tetramethyldisiloxane 氣体，且透過供給管 1022,以 10〜50cc/min 範圍（例如：25cc/min)供給 Diethoxydimethylsilane 氣体的同 13 200905733 時’透過供給管1027，以10〜lOOcc/min範圍（例如：5〇cc/min：) 供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.58、 揚氏模量約5Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.45、 介電率未出現時間上的變化；此外，將此低介電率膜的楊 氏模量約提升至8GPa。 (變形例4) 以10〜150cc/min範圍（例如：50cc/min)，透過供給管1〇21 供給 Diethoxy Tetramethyldisiloxane 氣体、且透過供給管 1022， 以 10〜150cc/min 範圍（例如：50cc/min)供給 DimethoxyThe Tetramethyldisiloxane gas is supplied through the supply pipe 1022 in the range of 10 to 50 cc/min (for example, 25 cc/min) to the same 13 200905733 of the Diethoxydimethylsilane gas, and is transmitted through the supply pipe 1027 in a range of 10 to 100 cc/min (for example, 5 cc). /min:) Supply He gas. The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.58 and a Young's modulus of about 5 GPa. Further, after the wafer 7 is subjected to the same conditions as described above in the second reactor 2 The low dielectric film has a dielectric constant of about 2.45 and a change in the dielectric age. In addition, the Young's modulus of the low dielectric film is raised to about 8 GPa. (Modification 4) Diethoxy Tetramethyldisiloxane gas is supplied through the supply pipe 1〇21 in a range of 10 to 150 cc/min (for example, 50 cc/min), and is supplied through the supply pipe 1022 in a range of 10 to 150 cc/min (for example, 50 cc/min). ) supply Dimethoxy

Tetramethyldisiloxane氣体的同時，也可透過供給管1〇27以1〇 〜100cc/min範圍（例如：5〇cc/min)供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.58、 楊氏模量約5.5Gpa ;此外，在第二反應器2中對晶圓7 實施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.45、 介電率未出現時間上的變化；此外，此低介電率膜的揚氏 模量約提升至8GPa。 (變形例5) 將透過供給管1022供給的氣體種類，從Dimeth〇xy Tetramethyldisiloxane 氣体換成 Hexamethyldisiloxane (CH3)3Si-0-Si(CH3)3氣体；接下來，透過供給管 urn，以1〇〜 150cc/min範圍（例如：5〇cc/min )供給⑽出呵 Tetramethyldisiloxane氣体、且透過供給管1〇22，以1〇〜 200905733 ===範圍（例如：5〇cc/min)供給 Hex_thyidisii_ 现体的同時，透過供給管卿，以5〇〜驚c/min範圍（例如： iOOcc/min)供給氧化劑的h2〇氣体；且也可透過供給管贈， 以ίο〜io〇cc/min範圍（例如：5〇cc/min)供給故氣体。 使用k種反應氣體所形成的低介電率膜為，介電率約 2.58、楊氏模量約4Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率制呈介電率約下降至 2.45、介電率未出現時間上的變化：此外，此低介電率膜的揚氏 模量約提升至7.5GPa。 再者，氧化劑雖依據反應氣體種類而定，但除了 H2〇氣體 之外，也可使用〇2氣體、N2〇氣體或乙醇氣體。 (變形例6) 將透過供給管1021供給的氣體種類，從Dieth〇xy Tetramethyldisiloxane 氣体換成 Diethyl HexamethylAt the same time as the Tetramethyldisiloxane gas, He gas can be supplied through the supply pipe 1〇27 in a range of 1 〇 to 100 cc/min (for example, 5 〇 cc/min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.58 and a Young's modulus of about 5.5 GPa. Further, in the second reactor 2, the wafer 7 is treated in the same manner as the above-described conditions. After that, the low dielectric film has a dielectric constant of about 2.45, and the dielectric constant has not changed in time; in addition, the Young's modulus of the low dielectric film is raised to about 8 GPa. (Variation 5) The gas type supplied through the supply pipe 1022 was changed from Dimeth〇xy Tetramethyldisiloxane gas to Hexamethyldisiloxane (CH3)3Si-0-Si(CH3)3 gas; then, through the supply pipe urn, 1〇~ The range of 150 cc/min (for example, 5 〇 cc / min) is supplied (10) to Tetramethyldisiloxane gas, and is supplied to Hex_thyidisii by the supply tube 1〇22, in the range of 1〇~200905733 === (for example, 5〇cc/min). At the same time, through the supply of the Secretary, the range of 〇 惊 c / min range (for example: iOOcc / min) to supply the oxidant h2 〇 gas; and also through the supply pipe, in the range of ίο~io 〇 cc / min (for example : 5 〇 cc / min) supply of the gas. The low dielectric film formed using the k kinds of reaction gases has a dielectric constant of about 2.58 and a Young's modulus of about 4 GPa. Further, after the wafer 7 is treated in the second reactor 2, the conditions are the same as those described above. The dielectric constant of the low dielectric constant is reduced to about 2.45, and the dielectric constant does not change in time: in addition, the Young's modulus of the low dielectric film is increased to about 7.5 GPa. Further, although the oxidizing agent is determined depending on the type of the reaction gas, in addition to the H2 krypton gas, 〇2 gas, N2 krypton gas or ethanol gas may be used. (Variation 6) The gas type supplied through the supply pipe 1021 was changed from Dieth〇xy Tetramethyldisiloxane gas to Diethyl Hexamethyl

Cyclotetrasiloxane((C2H5)(CH3)3(Si-0-Si)4(C2H5)(CH3)3)氣体； 及將透過供給管1022供給的氣體種類，從DimethoxyCyclotetrasiloxane ((C2H5)(CH3)3(Si-0-Si)4(C2H5)(CH3)3) gas; and the type of gas to be supplied through the supply pipe 1022, from Dimethoxy

Tetramethyldisiloxane 氣体換成 Diettioxy Hexamethyldisiloxane ((0C2H5)(CH3)2(Si-0-Si)(0C2H5)(CH3)2)氣体。 以10〜150cc/min範圍（例如：50cc/min)，透過供給管i〇2l 供給 Diethyl Hexamethyl Cyclotetrasiloxane 氣体、且透過供給管 1022，以 10〜300cc/min 範圍（例如：l〇〇cc/min)供給 Diethoxy Hexamethyldisiloxane(Hexamethyldisiloxane)氣体的同時，也可透 過供給管1027以10〜l〇〇cc/min範圍（例如：50cc/min)供給 He氣体。 15 200905733 使用這種反應氣體所形成的低介電率膜為，介電率約 2.58、揚氏模量約5Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.45、介電率未出現時間上的變化；此外，此低介電率膜的楊氏 模量約提升至8.5GPa。 (變形例7) 將透過供給管1022供給的氣體種類，從Dimethoxy Tetramethyldisiloxane 氣体換成 Eetra ethit〇xy [Cycl〇tetrasiloxane ((OC2H5)4(CH3)4(Si-〇-Si)4 氣体；接下來，透 過供給管1021，以10〜150cc/min範圍（例如：5〇cc/min)供給 Diethoxy Tetramethyldisiloxane 氣体；且也可透過供給管 1〇22， 以10〜15〇cc/min範圍（例如：75cc/min)供給e齡〇分 tetramethyl cyclotetrasiloxane 氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.52、揚氏模量約4.5Gpa ;此外，在第二反應器2中對晶圓7 實施同於既述條件的處理後，低介電率臈則呈介電率約下降至 I 2.4〇、介電率未出現時間上的變化；此外，此低介電率膜的揚氏 模量約提升至7.5GPa。 (變形例8) 以10〜150cc/min範圍（例如：l〇〇cc/min)，透過供給管 1021 供給 DiethoxyDiethoxy tetramethyl dixylyl 氣体的同時，也 可透過供給管1027以10〜l〇〇cc/min範圍（例如：50cc/min) 供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 200905733 2.55、 揚氏模量約6Gpa ;此外’在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.42、 介電率未出現時間上的變化；此外，此低介電率膜的揚氏 模量約提升至9GPa。 (變形例9) 將透過供給管1022供給的氣體種類，從DimethoxyThe Tetramethyldisiloxane gas was changed to Diettioxy Hexamethyldisiloxane ((0C2H5)(CH3)2(Si-0-Si)(0C2H5)(CH3)2) gas. Dirich Hexamethyl Cyclotetrasiloxane gas is supplied through the supply pipe i〇2l in a range of 10 to 150 cc/min (for example, 50 cc/min), and is supplied through the supply pipe 1022 in a range of 10 to 300 cc/min (for example, l〇〇cc/min). While supplying Diethoxy Hexamethyldisiloxane (Hexamethyldisiloxane) gas, He gas can also be supplied through the supply pipe 1027 in a range of 10 to 10 cc/min (for example, 50 cc/min). 15 200905733 A low dielectric film formed using such a reactive gas has a dielectric constant of about 2.58 and a Young's modulus of about 5 GPa. Further, in the second reactor 2, the wafer 7 is subjected to the same conditions as described above. After the treatment, the low dielectric film showed a dielectric constant of about 2.45, and the dielectric rate did not change over time; in addition, the Young's modulus of the low dielectric film increased to about 8.5 GPa. (Variation 7) The gas type supplied through the supply pipe 1022 was changed from Dimethoxy Tetramethyldisiloxane gas to Eetra ethit〇xy [Cycl〇tetrasiloxane ((OC2H5)4(CH3)4(Si-〇-Si) 4 gas; Diethoxy Tetramethyldisiloxane gas is supplied through the supply pipe 1021 in a range of 10 to 150 cc/min (for example, 5 〇 cc/min); and can also be supplied through the supply pipe 1 22 in a range of 10 to 15 cc/min (for example, 75 cc). /min) is supplied with a tetramethyl cyclotetrasiloxane gas. The low dielectric film formed by using the reaction gas has a dielectric constant of about 2.52 and a Young's modulus of about 4.5 GPa; moreover, in the second reactor 2. After the wafer 7 is subjected to the same conditions as described above, the low dielectric constant 呈 has a dielectric constant of about 1.4 〇, and the dielectric ratio does not change over time; in addition, the low dielectric film is The Young's modulus is raised to about 7.5 GPa. (Modification 8) Diethoxy Diethoxy tetramethyl dixylyl gas is supplied through the supply pipe 1021 in a range of 10 to 150 cc/min (for example, l〇〇cc/min), and is also supplied through the supply pipe. 1027 in the range of 10~l〇〇cc/min (for example 50 cc / min) He gas is supplied. The low dielectric film formed by using this reaction gas has a dielectric constant of about 200905733 2.55 and a Young's modulus of about 6 GPa; in addition, the wafer 7 is in the second reactor 2. After the treatment of the same conditions as described above, the low dielectric film has a dielectric constant of about 2.42, and the dielectric constant has not changed in time; in addition, the Young's modulus of the low dielectric film is increased. To 9 GPa. (Modification 9) The type of gas supplied through the supply pipe 1022 from Dimethoxy

Tetramethyldisiloxane 氣体換成 Bis ( Ethoxy dimethylsilyl ) Methane ((〇CH3)(CH3)2Si-CH2-Si(OCH3)(CH3)2 氣体；接下來， 透過供給管1022，以10〜150cc/min範圍（例如：i〇〇cc/min) 供給Bis (Ethoxy dimethylsilyl) Methane氣体的同時，也可透過 供給管1027，以10〜l〇〇cc/min範圍（例如：50cc/min)供給 He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.55、 揚氏模量約6Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.42、 介電率未出現時間上的變化；此外，此低介電率膜的楊氏 模量約提升至9GPa。 (變形例10) 將透過供給管1021供給的氣體種類，從DiethoxyThe Tetramethyldisiloxane gas is replaced by Bis (Ethoxy dimethylsilyl) Methane ((〇CH3)(CH3)2Si-CH2-Si(OCH3)(CH3)2 gas; next, through the supply tube 1022, in the range of 10~150 cc/min (for example: I〇〇cc/min) While supplying Bis (Ethoxy dimethylsilyl) Methane gas, it is also possible to supply He gas through the supply pipe 1027 in a range of 10 to 10 cc/min (for example, 50 cc/min). The low dielectric film formed by the gas has a dielectric constant of about 2.55 and a Young's modulus of about 6 GPa. Further, after the wafer 7 is subjected to the same conditions as described above in the second reactor 2, the low dielectric is low. The rate film has a dielectric constant which decreases to about 2.42, and the dielectric constant does not change in time; in addition, the Young's modulus of the low dielectric film increases to about 9 GPa. (Modification 10) The supply tube 1021 is transmitted through Type of gas supplied, from Diethoxy

Tetramethyldisiloxane 氣体換成 Diethoxydimethylsilane 氣体；且 透過供給官1022供給的氣體種類，從DimethoxyTetramethyldisiloxane gas is replaced by Diethoxydimethylsilane gas; and the type of gas supplied by the supply officer 1022, from Dimethoxy

Tetramethyldisiloxane 氣体換成 Bis (Etiioxy dimethylsilyl) Methane(OCH3)(CH3)2Si-CH2-Si(OCH3)(CH3)2 氣体。 17 200905733 接下來’以10〜150cc/min範圍（例如：50cc/min)，透過 供給管1021供給Diethoxydimethylsilane氣体、且透過供給管 1022 ’ 以 10〜150cc/min 範圍（例如：50cc/min)供給 Bis(Ethoxy dimethylsilyl) Methane氣体的同時，也可透過供給管ίο??以 10〜100cc/min範圍（例如：50cc/min)供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.52、 楊氏模量約6Gpa ;此外’在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 ί 2.39、介電率未出現時間上的變化；此外，此低介電率膜的揚氏 模量約提升至8GPa。 (變形例11) 將透過供給管1022供給的氣體種類，從Diethoxy Tetramethyldisiloxane 氣体換成 Acetone diethyl acetal (OC2H5)2(CH3)2C 氣体。 接下來’以10〜150cc/min範圍（例如：50cc/min)，透過 L 供給管 1〇21 供給 Dimethoxytetramethyl siloxane 氣体、且透過供 給管 1022,以 1〇〜150cc/min 範圍（例如：5〇cc/min)供給 Acetone diethyl acetal氣体的同時，也可透過供給管1027以1〇〜 100cc/min範圍（例如：50cc/min)供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.52、 揚氏模量約6Gpa ;此外’在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.39、介電率未出現時間上的變化；此外，此低介電率膜的楊氏 模量約提升至8GPa。 18 200905733 (變形例12) 將透過供給管1021供給的氣體種類，從Diethoxy Tetramethyldisiloxane 氣体換成 Tetraethoxy tetramethyl cyclotetrasiloxane ((0C2H5)4(CH3)4(Si-0-Si)4)氣体；透過供給 管 1022 供給的氣體種類，從 Dimethoxy Tetramethyldisiloxane 氣体換成 Bis (Et;hoxy dimethylsilyl) Methane 氣体。 接下來，以10〜150cc/min範圍（例如：50cc/min)，透過 供給管 1021 供給 Tetraethoxy tetramethyl cyclotetrasiloxane 氣 体、且透過供給管1022，以10〜150cc/min範圍（例如：50cc/min) 供給Bis (Ethoxy dimethylsilyl) Methane氣体的同時，也可透過 供給管1027以10〜100cc/min範圍（例如：50cc/min)供給He 氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.50、楊氏模量約5Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.38、介電率未出現時間上的變化；此外，此低介電率膜的楊氏 模量約提升至7GPa。 (變形例13) 將透過供給管1021供給的氣體種類，從Dieth〇xyThe Tetramethyldisiloxane gas is replaced by Bis (Etiioxy dimethylsilyl) Methane(OCH3)(CH3)2Si-CH2-Si(OCH3)(CH3)2 gas. 17 200905733 Next, 'diethoxydimethylsilane gas is supplied through the supply pipe 1021 in a range of 10 to 150 cc/min (for example, 50 cc/min), and supplied to the Bis through the supply pipe 1022' in a range of 10 to 150 cc/min (for example, 50 cc/min). (Ethoxy dimethylsilyl) Methane gas can also be supplied to He gas through a supply pipe ίο?? in a range of 10 to 100 cc/min (for example, 50 cc/min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.52 and a Young's modulus of about 6 GPa. Further, after the wafer 7 is treated in the second reactor 2, the conditions are the same as those described above. The low dielectric film has a dielectric constant of about 2.39, and the dielectric constant does not change in time; in addition, the Young's modulus of the low dielectric film is increased to about 8 GPa. (Modification 11) The gas type supplied through the supply pipe 1022 was changed from Diethoxy Tetramethyldisiloxane gas to Acetone diethyl acetal (OC2H5) 2 (CH3) 2C gas. Next, 'dimethoxytetramethyl siloxane gas is supplied through the L supply tube 1〇21 in a range of 10 to 150 cc/min (for example, 50 cc/min), and is supplied through the supply tube 1022 in a range of 1 〇 to 150 cc/min (for example, 5 〇cc). /min) While supplying Acetone diethyl acetal gas, He gas may be supplied through the supply pipe 1027 in a range of 1 Torr to 100 cc/min (for example, 50 cc/min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.52 and a Young's modulus of about 6 GPa. Further, after the wafer 7 is treated in the second reactor 2, the conditions are the same as those described above. The low dielectric film has a dielectric constant of about 2.39, and the dielectric constant does not change in time; in addition, the Young's modulus of the low dielectric film is raised to about 8 GPa. 18 200905733 (Modification 12) The gas type supplied through the supply pipe 1021 is changed from Diethoxy Tetramethyldisiloxane gas to Tetraethoxy tetramethyl cyclotetrasiloxane ((0C2H5)4(CH3)4(Si-0-Si)4) gas; through the supply pipe 1022 The type of gas supplied was changed from Dimethoxy Tetramethyldisiloxane gas to Bis (Et; hoxy dimethylsilyl) Methane gas. Next, a Tetraethoxy tetramethyl cyclotetrasiloxane gas is supplied through the supply pipe 1021 in a range of 10 to 150 cc/min (for example, 50 cc/min), and is supplied to the Bis at a range of 10 to 150 cc/min (for example, 50 cc/min) through the supply pipe 1022. (Ethoxy dimethylsilyl) Methane gas can also be supplied to the He gas through the supply pipe 1027 in a range of 10 to 100 cc/min (for example, 50 cc/min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.50 and a Young's modulus of about 5 GPa. Further, after the wafer 7 is subjected to the same conditions as described above in the second reactor 2 The low dielectric film has a dielectric constant of about 2.38, and the dielectric constant does not change in time; in addition, the Young's modulus of the low dielectric film is raised to about 7 GPa. (Modification 13) The type of gas supplied through the supply pipe 1021 from Dieth〇xy

Tetramethyldisiloxane 氣体換成 Methanediol(CH2(〇H)2)氣体等 碳氫化合物氣體；且透過供給管1〇22供給的氣體種類，從 Dimethoxy Tetramethyldisiloxane 氣体換成 Hexamethyldisil〇xane 氣体。 19 200905733 接下來’以200〜400cc/min範圍（例如：300cc/min)，透 過供給管1021供給Methanediol氣体、且透過供給管1〇22，以 10〜150cc/min |巳圍（例如：75cc/min)供給 Hexamethyldisiloxane 氣体的同時，也可透過供給管1027以1〇〜i〇〇cc/min範圍（例 如：50cc/min)供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.65、 楊氏模量約6Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 i 2.52、介電率未出現時間上的變化；此外，此低介電率膜的楊氏 模量約提升至9GPa。 (變形例14) 將透過供給管1021供給的氣體種類，從Dieth〇xyThe Tetramethyldisiloxane gas is replaced with a hydrocarbon gas such as a Methanediol (CH2(〇H)2) gas; and the gas supplied from the supply pipe 1〇22 is changed from a Dimethoxy Tetramethyldisiloxane gas to a Hexamethyldisil〇xane gas. 19 200905733 Next, 'Methanediol gas is supplied through the supply pipe 1021 in the range of 200 to 400 cc/min (for example, 300 cc/min), and is supplied through the supply pipe 1〇22 at 10 to 150 cc/min (for example, 75 cc/min). Min) While supplying Hexamethyldisiloxane gas, He gas may be supplied through the supply pipe 1027 in a range of 1 〇 to 〇〇 cc/min (for example, 50 cc/min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.65 and a Young's modulus of about 6 GPa. Further, after the wafer 7 is treated in the second reactor 2 in the same manner as the above-described conditions, The low dielectric film has a dielectric constant that decreases to about 2.52, and the dielectric rate does not change in time; in addition, the Young's modulus of the low dielectric film increases to about 9 GPa. (Modification 14) The type of gas supplied through the supply pipe 1021, from Dieth〇xy

Tetramethyldisiloxane 氣体換成 ethylene glycol (C2H4(〇H)2 氣 体；且透過供給管1022供給的氣體種類，從Dimeth〇xyThe Tetramethyldisiloxane gas is replaced by ethylene glycol (C2H4(〇H)2 gas; and the gas type supplied through the supply pipe 1022, from Dimeth〇xy

Tetramethyldisiloxane 氣体換成 Hexamethyldisiloxane 氣体。 C 接下來，以200〜4〇〇cc/min範圍（例如：3〇〇cc/min)，透 過供給管1021供給Ethylene glycol氣体、且透過供給管1〇22， 以！〇〜150cc/min範圍（例如：75cc/min )供給 Hexamethyldisiloxane氣体的同時，也可透過供給管1〇27以1〇 〜l〇〇cc/min範圍（例如：50cc/min)供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.65、 楊氏模量約6Gpa;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 2.52、介電率未出現時間上的變化；此外，此低介電率膜的揚氏 20 200905733 模量約提升至9GPa。 (變形例15) 將透過供給管1021供給的氣體種類，從Diethoxy Tetramethyldisiloxane 氣体換成 Acetone diethyl acetal ((OC2H5)2C(CH3)2)氣体；且透過供給管1022供給的氣體種 類，從 Dimethoxy Tetramethyldisiloxane 氣体換成 Hexamethyldisiloxane 氣体。 f 接下來，以200〜400cc/min範圍（例如：300cc/min)，透 過供給管1021供給Acetone diethyl acetal、且透過供給管1〇22， 以1〇〜150cc/min範圍（例如：75cc/min )供給 Hexamethyldisiloxane氣体的同時，也可透過供給管1027以10 〜100cc/min範圍（例如：50cc/min)供給He氣体。 使用這種反應氣體所形成的低介電率膜為，介電率約 2.65、揚氏模量約6Gpa ;此外，在第二反應器2中對晶圓7實 施同於既述條件的處理後，低介電率膜則呈介電率約下降至 (2.52、介電率未出現時間上的變化；此外，此低介電率膜的楊氏 模量約提升至9GPa。 (實施型態2) 接下來，將說明藉由本發明實施型態2半導體製造裝置的 半導體製造方法；半導體製造裳置的構成同於第j圖〜第3圖 所示，其使用之反應氣體如下所示。 將透過供給管1022供給的氣體種類，從跑她卿 Tetramethyldisiloxane Trimethylsilyl trimethyl methane 21 200905733 ((CH^XSi-CIVSiXCH3)3)氣体；且將透過供給管1023供給的 氣體種類，從H20氣体換成N20氣体。 接下來，以10〜150cc/min範圍（例如：75cc/min)，透過 供給管 1022 供給 Trimethylsilyl trimethylMethane 氣体、且透過 供給管1023 ’以100〜800cc/min範圍（例如：400cc/min)供給 N20氣体的同時，也可透過供給管1〇27以50〜200cc/min範圍 (例如：100cc/min)供給He氣体。 此時，持續維持200〜棚。C (例如：35(TC )晶圓溫度，將 壓力調整為100〜200Pa (例如：133Pa)，並對下部電極1〇62 施加100〜300W (例如：150W) 400KHz左右的電漿功率。以 這種方式在晶圓7上，形成約1〇〇〜4〇〇A厚度的絕緣物阻隔 膜，接下來’關閉閥門1032 ’以停止供給Trimethylsilyl trimethylMethane氣体及ΝζΟ氣体；再者，以上述括弧條件所形 成的絕緣物阻隔膜為，介電率約4.3、楊氏模量約60Gpa ;且如 同He-Ne雷射般，對上述絕緣物阻隔膜，照射具6328八波長的 光源時，其屈折率為1.7以上。 接下來，以同於實施型態1的手法，將晶圓7傳送至第二 反應器2’且在第二反應器2上以2〇〇〜4〇〇。(：範圍（例如：35〇。(：） 及100〜266Pa (例如：133Pa)條件，排放第二反應器2内的氣 體後，注入100〜30〇cc/min (例如：2〇〇cc/min) n2氣体，且藉 由燈# 3，以30〜120S範圍（例如：60S)照射例如波長185 + 254Nm、功率10mW/Cm2的低壓水銀光，以實施晶圓7的紫 外線退火(annealing)處理。 再者，為了調查絕緣物阻隔膜的銅擴散阻隔性，而在4〇〇 22 200905733 A厚的輯物阻隔膜上，設置約刚厚的銅薄膜 ，以便在n2 讀工^的條件下下進行4小時的退火後，用触銅擴散的2 人 置刀析裝置（SIMS)，調查銅絕緣阻隔中的銅擴散情 況。 其、、Ό果為，絕緣物阻隔膜從銅薄膜界面起至以下深度 之間未發現來自於銅膜的銅擴散；此外，絕緣物阻隔膜在退 火處理後的ι_ν特性同於退火前，在IMV/em電壓 10-9A/Cm2。 (變形例） 將透過供給管1G22供給的氣赫類，從Trimethylsilyl trimethylMethane 氣體換成 Hexa贈hyldisila繼 (CH3：bSi_NH-(cH3)3氣体；接下來，透過供給管1〇22，以1〇〜 150cc/min範圍（例如：75cc/min)供給出紐咖脚诎沿咖此氣 体，且透過供給管1〇23，以100〜800cc/min範圍（例如： 400cc/min)供給叫0氣体的同時’也可透過供給管1〇27，以 50〜200cc/min範圍（例如：i〇〇cc/min)供給出氣体。 使用這種反應氣體所形成的絕緣物阻隔膜為，介電率約 4.30、楊氏模量約65Gpa ;且如同He-Ne雷射般，對上述絕緣 物阻隔膜照射具6328A波長的光源時，其屈折率為17以上； 此外，以100〜400A形成絕緣物阻隔膜厚度。再者，對晶圓7 實施紫外線退火處理，並以實施型態2的銅條件，用2次離子 質量分析裝置（SIMS) ’調查銅絕緣阻隔中的銅擴散時，從絕 緣物阻隔膜表面起至5Nm深為止，皆未發現來自於銅膜的銅擴 散；此外，絕緣物阻隔膜在退火處理後的I-V特性同於退火前， 23 200905733 在 IMV/cm 電壓下為 i〇_9A/cm2。 (實施型態3) 使用實施型態1、2所說明的半導體製造裝置而製造的半導 體元件，因絕緣物阻隔膜表面空孔密閉，而具有充分的阻隔效 果；因此該半導體元件可做成輕薄短小；由此可知，此半導體 元件可適用於以下電子機器。 (1) 液晶、電黎_、EL ( electroluminescence )等顯示裝置 在電視、個人電腦等液晶、電漿、有機EL (electroluminescence)等顯示裝置上’備有獨立驅動各晝素的 半導體元件。 半導體元件上備有：傳達掃瞄訊號的掃瞄訊號配線、傳達 影像訊號的影像訊號線、包含連結掃瞄訊號配線及影像訊號線 之層間絕緣膜的薄膜電晶體、連結薄膜電晶體的晝素電極、讓 掃瞒訊號配線絕緣的絕緣膜、和絕緣薄膜電晶體及影像訊號線 的絕緣膜。 薄膜電晶體係依據透過掃瞄訊號配線傳達之掃瞄訊號，針 對晝素電極切換（ΟΝ/OFF)透過影像訊號線傳達影像訊號的轉 換器件。 顯示裝置具有高度的薄型化的需求；薄型液晶電視、薄塑 電漿電視、薄型液晶顯示器等就是最典型的例子；因此在顯示 裝置上採用本實施型態的半導體元件後，即可達成薄型化顯示 裝置。 (2) 數位相機、數位相機DSC等攝影裝置 24 200905733 數位相機、數位相機DSC等也同於顯示裝置一樣，具有輕 薄短小的高度需求。尤其是，數位相機等大多為隨身攜帶，因 此可採用本實施型態的半導體元件，以實現小型化；在攝影裝 置上採用本實施型態之半導體元件，即可做成小型攝影裝置。 (3) 傳真機、列印機、掃描器等影像形成裝置 近年來，傳真機荨影像形成裝置，除了發揮電話等功能之 外，也趨向於複合化發展；因此這種複合機種的影像形成裝置， 也面臨到小型化的需求；在影像形成裝置及複合機上，採用本 實施型態的半導體元件後，即可做成小型化的影像形成裝置等。 (4) 膽固醇液晶(cholesteric liquid crystal ; CLC)器件、發Tetramethyldisiloxane gas is replaced by Hexamethyldisiloxane gas. C Next, the Ethylene glycol gas is supplied through the supply pipe 1021 and passed through the supply pipe 1〇22 in the range of 200 to 4 〇〇 cc/min (for example, 3 〇〇 cc/min). While Hexamethyldisiloxane gas is supplied in the range of 〇 150 150 cc/min (for example, 75 cc/min), He gas may be supplied through the supply pipe 1 to 27 in a range of 1 〇 to 1 〇〇 cc / min (for example, 50 cc / min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.65 and a Young's modulus of about 6 GPa. Further, after the wafer 7 is subjected to the same conditions as described above in the second reactor 2 The low dielectric film has a dielectric constant of about 2.52 and a change in the dielectric rate. In addition, the Young's 20 200905733 modulus of the low dielectric film is increased to about 9 GPa. (Variation 15) The gas type supplied through the supply pipe 1021 was changed from Diethoxy Tetramethyldisiloxane gas to Acetone diethyl acetal ((OC2H5)2C(CH3)2) gas; and the gas type supplied through the supply pipe 1022 was from Dimethoxy Tetramethyldisiloxane gas. Change to Hexamethyldisiloxane gas. f Next, in a range of 200 to 400 cc/min (for example, 300 cc/min), Acetone diethyl acetal is supplied through the supply pipe 1021, and is supplied through the supply pipe 1〇22 in a range of 1 〇 150 150 cc/min (for example, 75 cc/min). While the Hexamethyldisiloxane gas is supplied, He gas may be supplied through the supply pipe 1027 in a range of 10 to 100 cc/min (for example, 50 cc/min). The low dielectric film formed using such a reactive gas has a dielectric constant of about 2.65 and a Young's modulus of about 6 GPa. Further, after the wafer 7 is treated in the second reactor 2 in the same manner as the above-described conditions, The low dielectric film has a dielectric constant that drops to about (2.52, the dielectric rate does not change in time; in addition, the Young's modulus of the low dielectric film increases to about 9 GPa. (Implementation 2 Next, a semiconductor manufacturing method by the semiconductor manufacturing apparatus of the second embodiment of the present invention will be described. The configuration of the semiconductor manufacturing apparatus is the same as that of the jth to the third drawing, and the reaction gas used is as follows. The gas supplied from the supply pipe 1022 is from the gas of the Tetramethyldisiloxane Trimethylsilyl trimethyl methane 21 200905733 ((CH^XSi-CIVSiXCH3)3); and the gas supplied through the supply pipe 1023 is changed from H20 gas to N20 gas. Next, in a range of 10 to 150 cc/min (for example, 75 cc/min), Trimethylsilyl trimethylMethane gas is supplied through the supply pipe 1022, and N20 is supplied through the supply pipe 1023' in a range of 100 to 800 cc/min (for example, 400 cc/min). At the same time, He gas can be supplied through the supply pipe 1 to 27 in a range of 50 to 200 cc/min (for example, 100 cc/min). At this time, the susceptor is continuously maintained at 200 sec. C (for example, 35 (TC) wafer temperature. The pressure is adjusted to 100 to 200 Pa (for example, 133 Pa), and a plasma power of about 100 to 300 W (for example, 150 W) of about 400 KHz is applied to the lower electrode 1 〇 62. In this manner, about 1 is formed on the wafer 7. 〇〇~4〇〇A thickness of the barrier film, then 'close the valve 1032' to stop the supply of Trimethylsilyl trimethylMethane gas and helium gas; in addition, the insulation barrier formed by the above bracket conditions is the dielectric ratio About 4.3, Young's modulus is about 60 Gpa; and like the He-Ne laser, when the above-mentioned insulator barrier film is irradiated with a light source having a wavelength of 6328 and eight wavelengths, the yield is 1.7 or more. In the method of state 1, the wafer 7 is transferred to the second reactor 2' and on the second reactor 2 by 2 〇〇 to 4 〇〇. (: range (for example: 35 〇. (:) and 100 to 266 Pa (for example: 133Pa), after discharging the gas in the second reactor 2, inject 100~30 Cc/min (for example: 2〇〇cc/min) n2 gas, and by lamp #3, irradiate low-pressure mercury light of, for example, a wavelength of 185 + 254 Nm and a power of 10 mW/cm2 in a range of 30 to 120 s (for example, 60 S). The ultraviolet annealing treatment of the wafer 7 is performed. Furthermore, in order to investigate the copper diffusion barrier property of the insulating barrier film, a thick copper film is placed on the 4〇〇22 200905733 A thick film to allow the n2 reading to be performed under the condition of n2 reading. After 4 hours of annealing, the copper diffusion in the copper insulation barrier was investigated using a two-person knife-distribution device (SIMS) that was exposed to copper. The result is that the barrier film of the insulator is not found to be diffused from the copper film from the copper film interface to the following depth; in addition, the ι_ν property of the barrier film after annealing is the same as that before annealing. IMV/em voltage is 10-9A/Cm2. (Modification) The gas gas supplied through the supply pipe 1G22 is exchanged from Trimethylsilyl trimethylMethane gas to Hexa for hyldisila followed by (CH3:bSi_NH-(cH3)3 gas; next, through the supply pipe 1〇22, to 1〇~ The 150 cc/min range (for example, 75 cc/min) is supplied to the Newcom's ankle along the gas, and is supplied to the gas called 0 gas through the supply pipe 1〇23 at a range of 100 to 800 cc/min (for example, 400 cc/min). 'The gas can also be supplied through the supply pipe 1〇27 in the range of 50 to 200 cc/min (for example, i〇〇cc/min). The insulating barrier film formed by using this reactive gas has a dielectric constant of about 4.30. The Young's modulus is about 65 Gpa; and like the He-Ne laser, when the above-mentioned insulator barrier film is irradiated with a light source having a wavelength of 6328 A, the yield is 17 or more; in addition, the thickness of the insulating barrier film is formed by 100 to 400 A. Furthermore, the wafer 7 is subjected to ultraviolet annealing treatment, and the copper diffusion in the copper insulation barrier is investigated by the secondary ion mass spectrometer (SIMS) in the copper condition of the type 2, from the surface of the insulating barrier film. Up to 5Nm deep, no copper film was found. Copper diffusion; in addition, the IV characteristic of the insulating barrier film after annealing is the same as that before annealing, 23 200905733 is i〇_9A/cm2 at IMV/cm voltage. (Implementation 3) Using the implementation type 1, 2 The semiconductor element manufactured by the semiconductor manufacturing apparatus described above has a sufficient barrier effect because the surface of the insulating barrier film is sealed, so that the semiconductor element can be made thin and light, and thus the semiconductor element can be applied to the following. (1) Display devices such as liquid crystal, electric illuminator, and electroluminescence are equipped with semiconductor devices that independently drive various elements on liquid crystal, plasma, and organic EL (electroluminescence) devices such as televisions and personal computers. The semiconductor component is provided with: a scan signal wiring for transmitting a scan signal, an image signal line for transmitting an image signal, a thin film transistor including an interlayer insulating film connecting the scan signal wiring and the image signal line, and a thin film transistor connected to the thin film transistor. An electrode, an insulating film that insulates the wiring of the broom signal, and an insulating film of the insulating film transistor and the image signal line. Based on the scanning signal transmitted through the scanning signal wiring, the conversion device for transmitting the image signal through the image signal line for the pixel switching (ΟΝ/OFF). The display device has a high demand for thinning; the thin LCD TV, thin plastic A plasma TV, a thin liquid crystal display, etc. are the most typical examples; therefore, a thinner display device can be realized by using the semiconductor element of the present embodiment on the display device. (2) Digital cameras, digital cameras, DSCs, etc. 24 200905733 Digital cameras, digital cameras, DSCs, etc., also have the same height and shortness as the display devices. In particular, a digital camera or the like is often carried around, so that the semiconductor device of the present embodiment can be used for downsizing, and a small-sized imaging device can be realized by using the semiconductor device of the present embodiment on a photographing device. (3) Image forming devices such as facsimile machines, printers, scanners, etc. In recent years, facsimile machines and video image forming devices have become more complex in addition to functions such as telephones; In addition, in the image forming apparatus and the multifunction peripheral, a semiconductor device of this embodiment can be used, and a compact image forming apparatus or the like can be obtained. (4) Cholesterol liquid crystal (CLC) device, hair

光型雷射裝置等光學裝置 X 在對於例如包含CD、MD、DVD光磁氣記錄媒體讀取資料 的光學讀取部上’備有將光磁氣記錄媒體的光，變換成電源訊 號的光電變換器件；及藉由光電變換器件，傳送變換光源訊號 之薄膜電晶體的半導體元件；因此在光學裝置上採用本實 施型態的半導體元件後，即可做成小型化的光學裝置。 以上為各種電子機器裝置例，但只要是具有半導體元件的 電子機器裝置，皆未受限於上述例示；因此本實施型態電子機 器裝置中也包含内置於例如行動電話等通信裝置、個人電腦等 資訊處理裝置或可裝卸的記憶體。 【圖式簡單說明】 第1圖為本發明實施型態1的半導體製造裝置模式結構圖。 25 200905733 第2圖為第1圖第一反應器1模式結構圖。 第3圖為第1圖第二反應器2模式結構圖。 【主要元件符號說明】 1 :第一反應器； 1014 :排氣閥； 1015 :排氣幫浦； 1021〜1028 :供給管； 1031、13 :流量； 1032 :閥； 1061 ··氣洗室； 1062 :電極； 1063、1064 :共振腔； 1065 .铭板， 1066 :絕緣體； 2:第二反應器； 3 :燈； 4 :石英管； 5:不活性氣體； 6 :加熱器； 7 .晶圓， 8 :接腳； 9 :受光感測器 11、12 :配管； 14 :閥門； 41 :周向環； 42 :對準； 43 :承載反應器；以及 26 200905733 44 :傳送反應器。An optical device X such as a light-type laser device is provided with an optical device that converts light of a magneto-optical recording medium into a power signal for an optical reading unit that reads data from, for example, a CD, MD, or DVD magneto-optical recording medium. The conversion device and the semiconductor element of the thin film transistor that converts the light source signal are transmitted by the photoelectric conversion device; therefore, the semiconductor device of the present embodiment is used in the optical device, and then the optical device can be miniaturized. The above is an example of various electronic device devices. However, any electronic device having a semiconductor element is not limited to the above description. Therefore, the electronic device device of the present embodiment also includes a communication device such as a mobile phone, a personal computer, or the like. Information processing device or removable memory. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic structural view showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention. 25 200905733 Figure 2 is a schematic diagram of the first reactor 1 mode structure in Figure 1. Fig. 3 is a schematic view showing the structure of the second reactor 2 in Fig. 1. [Explanation of main components] 1 : First reactor; 1014 : Exhaust valve; 1015 : Exhaust pump; 1021~1028: Supply pipe; 1031, 13: Flow rate; 1032: Valve; 1061 · Air-washing room; 1062: electrode; 1063, 1064: resonant cavity; 1065. nameplate, 1066: insulator; 2: second reactor; 3: lamp; 4: quartz tube; 5: inactive gas; 6: heater; Circle, 8: pin; 9: light sensor 11, 12: piping; 14: valve; 41: circumferential ring; 42: alignment; 43: carrying reactor; and 26 200905733 44: transfer reactor.

Claims (1)

200905733 十、申請專利範圍： 1. 一種半導體製造裝置，其具備：藉由讓反應基比其他官能 團更容易被切斷的狀態下的反應氣體，來處理製造標的為 半導體晶圓之手段。 2·如申請專利範圍第1項所述之半導體製造裝置，其中，該反 應氣體具有氧或碳之反應基的比率為20%〜35%。 3. 如申請專利範圍第1項所述之半導體製造裝置，其中，該反 應氣體包含矽氧烷氣體、曱基矽烷氣體、或曱矽烷氣體， 其中’甲氧基、乙氧基、N-丙氧基或乙基的數目，係在該 當各氣體内的曱基的數目以下。 4. 如申請專利範圍第1項所述之半導體製造裝置，其中，該反 應氣體為具有OH基、甲氧基、乙氧基、N-丙氧基、或乙基 之碳氫化合物氣體。 5*如申請專利範圍第1項所述之半導體製造裝置，其中，該反 應氣體中混合了含〇2氣體、C〇2氣體、出0氣體、Να氣體、 或乙醇氣體之氧化劑氣體。 6·如申請專利範圍第1項所述之半導體製造裝置，其中，該反 應氣體中混合了含He氣體之稀釋氣體。 7. 如申請專利範圍第1項所述之半導體製造裝置，其中，具備 在實施前述處理之半導體晶圓上照射紫外線之手段。 8. 如申請專利範圍第7項所述之半導體製造裴置，其中，該各 手段被設置於相同或不同的反應器。 9. 一種半導體製造方法，藉由讓反應基比其他官能團更容易被 切斷的條件下的反應氣體，來處理製造標的為半導體晶圓 28 200905733 的方法。 10. —種半導體晶圓， 電率為2.0〜2 5 ; 揚氏模量為5〜8GPa ; 具有：藉由使用讓反應基比其他官能團更容易被切斷的狀 態下之反應氣體的電漿CVD所製造之低介電率膜。 11. 一種半導體晶圓， 介電率為3.5〜5.5 ; 厚度為100〜400A ; 對波長為6328A的光，其屈光率在1.7以上； 形成於銅膜上；具有：藉由使用讓反應基比其他官能團更 容易被切斷的條件下之反應氣體的電漿CVD，所製造之絕 緣物阻隔膜。 12. —種電子機器，具備有：藉由申請專利範圍第9項所示之半 導體製造方法所製造之半導體元件。 29200905733 X. Patent application scope: 1. A semiconductor manufacturing apparatus comprising: a means for processing a target semiconductor wafer by a reaction gas in a state in which a reactive group is more easily cleaved than other functional groups. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction gas has a ratio of reactive groups of oxygen or carbon of 20% to 35%. 3. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction gas comprises a decane gas, a mercapto decane gas, or a decane gas, wherein 'methoxy, ethoxy, N-propyl The number of oxy or ethyl groups is below the number of thiol groups in each gas. 4. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction gas is a hydrocarbon gas having an OH group, a methoxy group, an ethoxy group, an N-propoxy group, or an ethyl group. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction gas is mixed with an oxidant gas containing krypton 2 gas, C 〇 2 gas, 0 gas, Να gas, or ethanol gas. 6. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction gas is mixed with a diluent gas containing He gas. 7. The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor wafer for performing the processing is irradiated with ultraviolet rays. 8. The semiconductor manufacturing device of claim 7, wherein the means are disposed in the same or different reactors. A semiconductor manufacturing method for processing a semiconductor wafer 28 200905733 by a reaction gas under conditions in which a reactive group is more easily cleaved than other functional groups. 10. A semiconductor wafer having an electric modulus of 2.0 to 2 5 ; a Young's modulus of 5 to 8 GPa; and a plasma having a reaction gas in a state in which a reactive group is more easily cleaved than other functional groups. Low dielectric film made by CVD. 11. A semiconductor wafer having a dielectric constant of 3.5 to 5.5; a thickness of 100 to 400 A; and a light having a wavelength of 6328 A having a refractive index of 1.7 or more; formed on a copper film; having: a reactive group by use Plasma CVD of a reaction gas under conditions in which it is easier to be cut than other functional groups, and an insulating barrier film produced. 12. An electronic device comprising: a semiconductor device manufactured by the semiconductor manufacturing method shown in claim 9 of the patent application. 29
TW097128703A 2007-07-30 2008-07-29 Apparatus and method for manufacturing semiconductor, and electronic equipment TW200905733A (en)

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US8704996B2 (en) 2010-10-25 2014-04-22 Industrial Technology Research Institute Cholesteric liquid crystal device with reflection electrodes and partition structures

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