KR20090013096A - Apparatus and method for manufacturing semiconductor, and electronic equipment - Google Patents

Abstract

An apparatus and method for manufacturing semiconductor, and electronic equipment are provided to form the insulator barrier film having the low dielectric constant and diffusion barrier function by controlling the silicon, and the rate of the carbon and oxygen by using the sylil gas as the reaction gas with the siloxane gas. The reaction radical processes the semiconductor wafer(7) manufactured by using the reaction gas. The reaction gas includes siloxane gas, and the methylsilane gas or the silyl gas. The low-dielectric-layer or the insulator barrier film is formed by the reaction of the combination of the oxygen(O) with C2H5 and OC2H5 or OCH3. The rate of the reaction radical having the reaction gas is 20% ~ 30% of the oxygen or the carbon.

Description

Semiconductor manufacturing apparatus, semiconductor manufacturing method, and electronic device {APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR, AND ELECTRONIC EQUIPMENT}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and an electronic apparatus, and more particularly, to a semiconductor manufacturing apparatus, a semiconductor manufacturing method, and an electronic apparatus for manufacturing a semiconductor wafer without using an oxidizing agent.

Conventionally, when forming a porous low dielectric constant film (Law-k film) in a semiconductor device by plasma CVD, it was common to use methylsilane gas or methylsilane gas which has a methoxy group or an ethoxy group as a reaction gas. .

In the case of forming the insulation barrier film of the copper film (銅膜) in a semiconductor device by plasma CVD, it is common to use a gas by combining the methyl silane gas and N ₂ O gas as a reaction gas.

However, the reaction gas as described above has a problem in that the dielectric constant of both the porous low dielectric constant film and the insulator barrier film can be reduced only to a limited degree, and sufficient mechanical strength cannot be obtained.

Specifically, the dielectric constant of the porous low dielectric constant film could be reduced to only about 2.6. Moreover, the mechanical strength also had Young's modulus less than 5 GPa. On the other hand, when the thickness of the insulating barrier film of copper is 200 to 300 kPa, the mechanical strength is lowered. The copper insulating barrier film has a problem that the copper diffusion barrier film does not have the ability to prevent copper diffusion unless the Young's modulus is 20 GPa to 60 Gpa and the dielectric constant is not less than 5.5. This is due to the inability to control the carbon content and the nitrogen content in the porous low dielectric constant film and the insulator barrier film when the reaction gas is used.

Then, this invention makes it a subject to improve the low dielectric constant of a porous low dielectric constant film and an insulator barrier film, and to improve mechanical strength.

In order to solve the said subject, the semiconductor manufacturing apparatus of this invention,

The reactor is provided with a means for treating the semiconductor wafer to be manufactured by the reaction gas in a state where the reactor is likely to be cut as compared with other functional groups.

When the reaction gas which a reactor is easy to cut | disconnect is used, the silicon gas or the oxygen side will mutually couple | bond the reaction gas which the reactor cut | disconnected by the cutting amount of this reactor.

Specifically, for example, the ethyl group is weak because the bonding strength is weaker than that of the methyl group. As a result, the bond amount of molecules of the reaction gas increases, contributing to lowering the dielectric constant of the porous low dielectric constant film and the insulator barrier film and improving the mechanical strength.

That is, in the present invention, a siloxane gas having an OC ₂ H ₅ group or an OCH ₃ group or the like is typically used as the reaction gas, and the oxygen (O) remaining after the C ₂ H ₅ group or the like is desorbed. A low dielectric constant film or an insulator barrier film is formed through mutual coupling or reaction with an OC ₂ H ₅ group or an OCH ₃ group of a C ₂ H ₅ group. On the other hand, when a silyl gas is used as the reaction gas together with the siloxane gas, the ratio of silicon, oxygen and carbon can be adjusted, so that the dielectric constant and mechanical strength between the porous low dielectric constant film and the insulator barrier film can be easily controlled. It is possible to form a low dielectric constant film having a large number of hermetic voids, and by incorporating carbon or nitrogen into the insulator barrier film, the dielectric constant can be relatively lowered and the copper barrier property and mechanical strength can be increased. have.

As a result, a wafer having a low dielectric constant having a low dielectric constant and a high mechanical strength capable of withstanding a CMP process can be obtained, and an insulating barrier film having a relatively low dielectric constant and high copper diffusion preventing function can be formed. .

The reaction gas contains a siloxane gas, a methylsilane gas, or a silyl gas, and the number of methoxy groups, ethoxy groups, n-propoxy groups, or ethyl groups may be equal to or less than the number of methyl groups in each gas. In this case, the siloxane gas may be a chain siloxane gas, or a siloxane gas may be a reactive gas. Moreover, these mixed gases may be sufficient. The reaction gas may be a mixed gas of at least two of siloxane gas, methylsilane gas, and silyl gas. In addition, a hydrocarbon gas having an OH group, a methoxy group, an ethoxy group, an n-propoxy group, or an ethyl group may be used as the reaction gas.

In addition, what is necessary is just to make the reaction gas 20%-35% of the ratio of the reactor which has oxygen or carbon. This ratio is for the whole reaction gas. Therefore, for example, when the mixed cyclic siloxane gas is taken as an example, it is not said that a gas having five methoxy groups and three methyl groups should not exist.

Moreover, what is necessary is just to provide the means to irradiate an ultraviolet-ray to the semiconductor wafer in which the said process was performed, in this case, each said means may be provided in the same chamber, and may be provided in the other chamber.

And the semiconductor manufacturing method of this invention processes the semiconductor wafer of manufacture object with the reaction gas of the conditions on which a reactor is easy to cut | disconnect compared with another functional group.

In addition, the semiconductor wafer of the present invention,

Dielectric constant is 2.0-2.5,

Young's modulus is 5-8 GPa,

The reactor has a low dielectric constant film produced by plasma CVD using a reaction gas under conditions that are likely to be cut compared to other functional groups.

The semiconductor wafer of the present invention

Dielectric constant is 3.5 to 5.5,

Thickness is 200 ~ 400Å,

The refractive index of light having a wavelength of 6328 GHz is 1.7 or more,

It is formed on the copper film,

The reactor has an insulator barrier film prepared by plasma CVD using a reaction gas under conditions that are likely to be cut compared to other functional groups.

By implementing the present invention, the dielectric constant of the porous low dielectric constant film and the insulator barrier film can be reduced and the mechanical strength can be improved.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to drawings. In addition, in each figure, the same code | symbol is attached | subjected to the same part.

<Embodiment 1>

1 is a schematic configuration diagram of a semiconductor manufacturing apparatus of Embodiment 1 of the present invention. In the present embodiment, an apparatus for modifying a low dielectric constant film is mainly described.

1 shows a hoop 41 in which a wafer is accommodated, a wafer alignment 42 for aligning a wafer taken out from the hoop 41, a load lock chamber 43 which is a pressure reduction chamber having a load lock mechanism, A first chamber 1 for performing a plasma CVD process or the like for forming an insulator barrier film on the wiring connection hole of the wafer, and an agent for irradiating ultraviolet light to the insulator barrier film formed in the first chamber 1 The transfer chamber 44 which has the 2nd chamber 2 and the robot arm which conveys a wafer between the load lock chamber 43, the 1st chamber 1, and the 2nd chamber 2 is shown.

FIG. 2: is a schematic block diagram of the 1st chamber 1 of FIG. 2 shows a supply pipe 1021 of diethoxytetramethyldisiloxane [(OC ₂ H ₅ ) (CH ₃ ) ₂ Si-O-Si (OC ₂ H ₅ ) (CH ₃ ) ₂ ] gas as a supply pipe for various gases. ), A supply pipe 1022 of dimethoxytetramethylsiloxane [(OCH ₃ ) (CH ₃ ) ₂ Si-O-Si (OCH ₃ ) (CH ₃ ) ₂ ] gas, and a supply pipe 1023 of H ₂ O gas And, O ₂ Gas supply pipe 1024 and N ₂ Gas supply pipe 1025, Ar gas supply pipe 1026, He gas supply pipe 1027, and NF ₃ The supply pipe 1028 of gas is shown.

2, the valve 1032 and mass flow 1031 connected to each of these supply pipes 1021-1028, the aluminum plate 1065 provided in the upper part of the 1st chamber 1, and the aluminum plate 1065 are shown. ), An alumina (Al ₂ O ₃ ) insulator 1066, a exhaust valve 1014 for exhausting gas in the first chamber 1, and an exhaust pump connected to the exhaust valve 1014. 1015, a heater 6 made of an insulator AlN positioned on a lifting stage and heating the wafer 7, and a pin receiving the wafer 7 conveyed by the transfer chamber 44 ( 8), a gas shower 1061 for spraying the gas supplied into the first chamber 1 through the supply pipes 1021 to 1028 to the wafer 7, and a lower electrode provided to the heater 6 ( 1062, an oscillator 1064 of 380-420 KHz and a 13.56 MHz oscillator connected to the lower electrode 1062 and the upper electrode (earth) which is also used with the gas shower 1061 ( 1063).

3 is a schematic configuration diagram of the second chamber 2 of FIG. 1. In Fig. 3, a plurality of (e.g., four) lamps 3, such as a low pressure mercury lamp and Xe excimer lamp, which irradiate ultraviolet light, and each lamp 3 are protected from stress applied during decompression. A continuous, periodic and intermittent lamp with a quartz pipe 4 for preventing contact of oxygen to the lamp 3, an inert gas such as nitrogen (N ₂ ) gas or the like supplied to the quartz pipe 4 or air 5 (3) A light receiving sensor 9 attached to the inner wall of the second chamber 2 or in the quartz pipe 4 for measuring illuminance of the irradiated light, and for supplying nitrogen gas into the second chamber 2. After the pipe 11 and the wafer 7 have been processed, the pipe 12 for supplying an oxygen (O ₂ ) gas for cleaning the inside of the second chamber 2, the pipes 11 and 12, and the gas The valve 14 provided between the tank and the gas flow rates passing through the pipes 11 and 12 are measured, and the valve 14 is opened and closed in accordance with the measurement result. The mass flow 13 to control is shown. In addition, you may make it possible to supply inert gas other than nitrogen to the 2nd chamber 2 as needed. In addition, you may prepare one chamber which combined the 1st chamber 1 and the 2nd chamber 2.

Next, the processing procedure by the semiconductor manufacturing apparatus shown in FIG. 1 is demonstrated. In this embodiment, first, the 12-inch wafer 7 in which the wiring pattern or the wiring connection hole is formed is conveyed, for example, in the state accommodated in the hoop 41 from a CVD apparatus in a clean room (not shown). Thereafter, the wafer 7 is taken out from the hoop 41 and conveyed to the wafer filament 42 side.

In the wafer filament 42, the alignment of the wafer 7 is performed. Thereafter, the wafer 7 is transferred to the load lock chamber 43 before being conveyed to the first chamber 1.

Next, the inside of the load lock chamber 43 is depressurized. When the inside of the load lock chamber 43 reaches a desired pressure, the gate valve partitioning between the load lock chamber 43 and the transfer chamber 44 is opened.

Thereafter, the wafer 7 is transferred into the transfer chamber 44. Subsequently, the wafer 7 is transferred from the load lock chamber 43 to the first chamber 1 by the robot arm inside the transfer chamber 44.

In the 1st chamber 1, in order to heat the wafer 7, the heater 6 is heated in the range of 200-400 degreeC (for example, 350 degreeC). Next, the wafer 7 is placed on the fin 8 positioned above the fixed heater 6 in advance, and then the pin 8 is lowered so that the wafer 7 is placed on the heater 6. . Alternatively, the movable heater 6 is lowered in advance, the wafer 7 is placed on the fin 8, and then the heater 6 is raised to place the wafer 7 on the heater 6. In the first chamber, the exhaust pump 1015 is already turned on, and the exhaust valve 1014 is opened to exhaust the inside of the first chamber 1.

In this state, the valve 1032 is opened under the control of the mass flow 1031, and dimethoxytetramethyldisiloxane gas is introduced into the first chamber 1 through the supply pipe 1022 in a range of 50 to 150 cc / min. It is supplied in the range (for example, 100 cc / min).

As a result, the supplied gas is sprayed onto the wafer 7 by the gas shower 1061. Thereafter, the pressure is adjusted to 250 to 300 Pa (for example, 266 Pa) while maintaining a wafer temperature of 200 to 400 ° C. (for example, 350 ° C.) to adjust the plasma power to 600 to 650 W (for example, 632 W). ) In this manner, a low dielectric constant film is formed on the wafer 7. Then, the valve 1032 is closed to stop the supply of the dimethoxytetramethyldisiloxane gas. On the other hand, the low dielectric constant film formed under the parentheses described above had a dielectric constant of about 2.60 and a Young's modulus of about 5 GPa.

Thereafter, the wafer 7 is transferred from the first chamber 1 to the second chamber 2 by the robot arm in the transfer chamber 44.

In the second chamber 2, the heater 6 is heated to a range of 200 to 400 ° C. (for example, 350 ° C.). Next, the wafer 7 is placed on the heater 6. In the second chamber 2, the exhaust pump 1015 is already on, the exhaust valve 1014 is opened, and the pressure in the second chamber 2 is 100 to 300 Pa (for example, 133 Pa). Exhaust on condition. Then, 100 to 300 cc / min (for example, 200 cc / min) is flowed through the N ₂ gas, and low pressure mercury light having a wavelength of 185 + 254 nm and a power of 10 mW / cm 2 is emitted from the lamp 3 for 30 to 120 s. By irradiating in the range (for example, 60s), the ultraviolet annealing treatment of the wafer 7 is performed. On the other hand, the dielectric constant of the low dielectric constant film formed under the above parenthesized condition decreased to about 2.47, and no change in dielectric constant over time was observed. In addition, the Young's modulus of the low dielectric constant film was improved to about 8 GPa.

On the other hand, the first chamber 1 is cleaned after taking out the wafer 7. Specifically, the valve 1032 is opened under the control of the mass flow 1031, and the Ar gas at a flow rate of about 100 cc / min in the first chamber 1 through the supply pipes 1024, 1026, and 1027, O _{2 at} approx. 200 cc / min flow Gas and NF _{3 at a} flow rate of about 400 cc / min Supply a mixed gas with the gas. At this time, the inside of the first chamber 1 is exhausted by turning on the exhaust pump 1015 and opening the exhaust valve 1014. What is necessary is just to make the pressure inside the 1st chamber 1 at the time of exhaust about 0.5-1.0 Torr. In this state, the oscillators 1063 and 1064 are turned on, respectively, and the plasma is generated by applying power of 13.56 MHz, 600 W, 400 KHz, and 300 W to the upper electrode 1061 and the lower electrode 1062, respectively.

[Modification 1]

Instead of supplying the above-mentioned dimethoxytetramethyldisiloxane gas, while supplying diethoxytetramethyldisiloxane gas in the range of 50-150 cc / min (for example, 100 cc / min) through the supply pipe 1021, The He gas may be supplied in a range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027. In this case, temperature conditions, pressure conditions, and the like may be the same as those described above.

The low dielectric constant film formed using such a reaction gas had a dielectric constant of about 2.60 and a Young's modulus of about 5 GPa. In addition, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.46, and no change in the dielectric constant over time was observed. In addition, the Young's modulus of the low dielectric constant film was improved to about 8 GPa.

[Modification 2]

The type of gas supplied through the supply pipe 1022 is replaced with tetramethylsilane [(CH ₃ ) ₄ Si] gas from dimethoxytetramethyldisiloxane gas. Then, the diethoxytetramethyldisiloxane gas is supplied through the supply pipe 1021 in the range of 50 to 150 cc / min (for example, 75 cc / min), and the tetramethylsilane gas is supplied through the supply pipe 1022 to 10. The He gas may be supplied in the range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027 while being supplied in the range of ˜50 cc / min (for example, 25 cc / min). .

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.58 and a Young's modulus of about 5 GPa. Further, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.45, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 8 GPa.

[Modification 3]

The type of gas supplied through the supply pipe 1022 is replaced with the diethoxymethylsilane [(OC ₂ H ₅ ) ₂ (CH ₃ ) ₂ Si] gas from the dimethoxytetramethyldisiloxane gas. Then, the diethoxytetramethyldisiloxane gas is supplied in the range of 50 to 150 cc / min (for example, 75 cc / min) through the supply pipe 1021, and the diethoxydimethylsilane gas is supplied through the supply pipe 1022. While supplying in the range of 10 to 50 cc / min (for example, 25 cc / min) and supplying He gas in the range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027 do.

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.58 and a Young's modulus of about 5 GPa. Further, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.45, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 8 GPa.

[Modification 4]

Through the supply pipe 1021, diethoxy tetramethyldisiloxane gas is supplied in a range of 10 to 150 cc / min (for example, 50 cc / min), and through the supply pipe 1022, dimethoxytetramethyldisiloxane gas is supplied. While supplying in the range of 10 to 150 cc / min (for example, 50 cc / min) and supplying He gas in the range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027, do.

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.58 and a Young's modulus of about 5.5 GPa. Further, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.45, and no change in the dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 8 GPa.

[Modification 5]

The type of gas supplied through the supply pipe 1022 is replaced with hexamethyldisiloxane [(CH ₃ ) ₃ Si-O-Si (CH ₃ ) ₃ ] gas from dimethoxytetramethyldisiloxane gas. Then, the diethoxytetramethyldisiloxane gas is supplied in the range of 10 to 150 cc / min (for example, 50 cc / min) through the supply pipe 1021, and the hexamethyldisiloxane gas is supplied through the supply pipe 1022. While supplying in a range of 10 to 150 cc / min (for example, 50 cc / min), and through a supply pipe 1023, H ₂ O gas, which is an oxidant, in a range of 50 to 500 cc / min (for example, 100 cc / min) ) And He gas may be supplied in a range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027.

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.58 and a Young's modulus of about 4 GPa. Further, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.45, and no change in dielectric constant over time was observed. And the Young's modulus of this low dielectric constant film improved to about 7.5 GPa.

On the other hand, the oxidant also depends on the type of reaction gas, and not only H ₂ O gas, but also O ₂ It is also possible to use gases, N ₂ O gases, or alcohol gases.

[Modification 6]

The type of gas supplied through the supply pipe 1021 was determined from diethoxytetramethyldisiloxane gas by diethylhexamethylcyclotetrasiloxane [(C ₂ H ₅ ) (CH ₃ ) ₃ (Si-O-Si) ₄ (C ₂ H ₅ ) (CH ₃ ) ₃ ] instead of the gas, the type of gas supplied through the supply pipe 1022 was selected from dimethoxytetramethyldisiloxane gas from diethoxyhexamethyldisiloxane [(OC ₂ H ₅ ) ( CH ₃ ) ₂ (Si-O-Si) (OC ₂ H ₅ ) (CH ₃ ) ₂ ] gas.

Then, diethyl hexamethylcyclotetrasiloxane gas is supplied in the range of 10 to 150 cc / min (for example, 50 cc / min) through the supply pipe 1021, and through the supply pipe 1022, diethoxyhexamethyldi The siloxane gas is supplied in the range of 10 to 300 cc / min (for example, 100 cc / min), and the He gas is in the range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027. You may supply by

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.58 and a Young's modulus of about 5 GPa. Further, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.45, and no change in dielectric constant over time was observed. And the Young's modulus of this low dielectric constant film improved to about 8.5 GPa.

[Modification 7]

The type of gas supplied through the supply pipe 1022 was changed from dimethoxytetramethyldisiloxane gas to tetraethoxytetramethylcyclotetrasiloxane [(OC ₂ H ₅ ) ₄ (CH ₃ ) ₄ (Si-O-Si) ₄ Instead of gas

do. Then, the diethoxy tetramethyldisiloxane gas is supplied in the range of 10 to 150 cc / min (for example, 50 cc / min) through the supply pipe 1021, and through the supply pipe 1022, tetraethoxy tetramethylcyclo Tetrasiloxane gas is supplied in a range of 10 to 150 cc / min (for example, 50 cc / min), and tetraethoxytetramethylcyclotetrasiloxane gas is supplied in a range of 10 to 150 cc / min (for example, through a supply pipe 1022). For example, you may supply at 75 cc / min).

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.52 and a Young's modulus of about 4.5 GPa. In addition, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.40, and no change in dielectric constant over time was observed. And the Young's modulus of this low dielectric constant film improved to about 7.5 GPa.

[Modification 8]

While supplying diethoxytetramethyldisilyl gas in the range of 10 to 150 cc / min (for example, 100 cc / min) through the supply pipe 1021, He gas is supplied through the supply pipe 1027 to 10 to 100 cc / You may supply in the range of min (for example, 100 cc / min).

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.55 and a Young's modulus of about 6 GPa. Further, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.45, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 9 GPa.

[Modification 9]

The type of gas supplied through the supply pipe 1022 is bis (ethoxydimethylsilyl) methane [(OCH ₃ ) (CH ₃ ) ₂ Si-CH ₂ _Si (OCH ₃ ) (CH from dimethoxytetramethyldisiloxane gas). ₃ ) ₂ ] Replace with gas. Then, bis (ethoxydimethylsilyl) methane gas is supplied through the supply pipe 1021 in the range of 10 to 150 cc / min (for example, 100 cc / min), and He gas is supplied through the supply pipe 1027. You may supply in the range of 10-100 cc / min (for example, 50 cc / min).

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.55 and a Young's modulus of about 6 GPa. Further, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.42, and no change in the dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 9 GPa.

[Modification 10]

The type of gas supplied through the supply pipe 1022 is replaced with the type of gas supplied through the supply pipe 1021 instead of the diethoxy tetramethyldisiloxane gas from the diethoxy tetramethyldisiloxane gas. From bis (ethoxydimethylsilyl) methane [(OCH ₃ ) (CH ₃ ) ₂ Si-CH ₂ -Si (OCH ₃ ) (CH ₃ ) ₂ ] gas.

Then, the diethoxydimethylsilane gas is supplied to the range of 10 to 150 cc / min (for example, 50 cc / min) through the supply pipe 1021, and bis (ethoxydimethylsilyl) methane is supplied through the supply pipe 1022. While supplying the gas in the range of 10 to 150 cc / min (for example, 50 cc / min), and through the supply pipe 1027, He gas in the range of 10 to 100 cc / min (for example, 50 cc / min) You may supply.

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.52 and a Young's modulus of about 6 GPa. In addition, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.39, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 8 GPa.

[Modification 11]

The type of gas supplied through the supply pipe 1022 is replaced with the acetone diethyl acetal [(OC ₂ H ₅ ) ₂ (CH ₃ ) ₂ C] gas from the diethoxytetramethyl disiloxane gas.

Then, dimethoxytetramethylsiloxane gas is supplied in the range of 10 to 150 cc / min (for example, 50 cc / min) through the supply pipe 1021, and acetone diethyl acetal gas is supplied through the supply pipe 1022. The He gas may be supplied in the range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027 while being supplied in the range of ˜150 cc / min (for example, 50 cc / min). .

The low dielectric constant film formed using such a reaction gas had a dielectric constant of about 2.52 and a Young's modulus of about 6 GPa. In addition, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.39, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 8 GPa.

[Modification 12]

The type of gas supplied through the supply pipe 1021 is tetraethoxytetramethylcyclotetrasiloxane [(OC ₃ H ₅ ) ₄ (CH ₃ ) ₄ (SiO-Si) ₄ ] gas from the diethoxytetramethyldisiloxane gas. The type of gas supplied through the supply pipe 1022 is replaced with bis (ethoxydimethylsilyl) methane gas from dimethoxytetramethyldisiloxane gas.

Then, the tetraethoxytetramethylcyclotetrasiloxane gas is supplied in the range of 10 to 150 cc / min (for example, 50 cc / min) through the supply pipe 1021, and bis (ethoxy) is supplied through the supply pipe 1022. Dimethylsilyl) Methane gas is supplied in the range of 10 to 150 cc / min (for example, 50 cc / min), and He gas is supplied in the range of 10 to 100 cc / min (for example, 50 cc) through the supply pipe 1027. / min).

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.50 and a Young's modulus of about 5 GPa. When the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.38, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 7 GPa.

[Modification 13]

The type of gas supplied through the supply pipe 1021 is replaced with a hydrocarbon gas such as methanediol [CH ₂ (OH) ₂ ] gas from diethoxytetramethyldisiloxane gas and supplied through the supply pipe 1022. The type of is replaced with hexamethyldisiloxane gas from dimethoxytetramethyldisiloxane gas.

Then, through the supply pipe 1021, methanediol gas is supplied in a range of 200 to 400 cc / min (for example, 300 cc / min), and hexamethyldisiloxane gas is supplied through the supply pipe 1022 to 10 to 150 cc / min. While supplying in the range of min (for example, 75 cc / min), He gas may be supplied in the range of 10 to 100 cc / min (for example, 50 cc / min) through the supply pipe 1027.

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.65 and a Young's modulus of about 6 GPa. When the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.52, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 9 GPa.

[Modification 14]

The type of gas supplied through the feed pipe 1021, diethoxy tetramethyldisiloxane from ethylene glycol siloxane gas _{[C 2 H 4 (OH)} 2] type of gas in place of a gas, supplied through the supply pipe 1022 Is replaced with hexamethyldisiloxane gas from dimethoxytetramethyldisiloxane gas.

Then, the ethylene glycol gas is supplied in the range of 200 to 400 cc / min (for example, 300 cc / min) through the supply pipe 1021, and the hexamethyldisiloxane gas is 10 to 150 cc / in the supply pipe 1022. While supplying in the range of min (for example, 75 cc / min), He gas may be supplied in the range of 10-100 cc / min (for example, 50 cc / min) through the supply pipe 1027.

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.65 and a Young's modulus of about 6 GPa. In addition, when the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.52, and no change in the dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 9 GPa.

[Modification 15]

The type of gas supplied through the supply pipe 1021 is replaced with acetone diethyl acetal [(OC ₂ H ₅ ) ₂ C (CH ₃ ) ₂ ] gas from diethoxytetramethyldisiloxane gas, and the supply pipe 1022 is replaced with The type of gas supplied through is replaced with hexamethyl disiloxane gas from dimethoxy tetramethyl disiloxane gas.

Then, acetone diethyl acetal is supplied in the range of 200 to 400 cc / min (for example, 300 cc / min) through the supply pipe 1021, and 10 to 150 cc of hexamethyldisiloxane gas is supplied through the supply pipe 1022. While supplying in the range of / min (for example, 75 cc / min), He gas may be supplied in the range of 10-100 cc / min (for example, 50 cc / min) through the supply pipe 1027.

The low dielectric constant film formed using this reaction gas had a dielectric constant of about 2.65 and a Young's modulus of about 6 GPa. When the wafer 7 was subjected to the same treatment as described above in the second chamber 2, the dielectric constant of the low dielectric constant film was lowered to about 2.52, and no change in dielectric constant over time was observed. The Young's modulus of the low dielectric constant film was improved to about 9 GPa.

<Embodiment 2>

Next, the semiconductor manufacturing method by the semiconductor manufacturing apparatus of Embodiment 2 of this invention is demonstrated.

Although the structure of a semiconductor manufacturing apparatus should just be the same as what was shown in FIGS. 1-3, the reaction gas used is as follows.

Instead of dimethoxytetramethyldisiloxane gas from trimethylsilyltrimethylmethane [(CH ₃ ) ₃ (Si-CH ₂ -Si) (CH ₃ ) ₃ ] gas, the type of gas supplied through the supply pipe 1022 is replaced with The type of gas supplied through the supply pipe 1023 is replaced with H ₂ O gas from N ₂ O gas.

Then, trimethylsilyltrimethylmethane gas is supplied through the supply pipe 1022 in the range of 10 to 150 cc / min (for example, 75 cc / min), and N ₂ O gas is supplied through the supply pipe 1023 to 100 to 800 cc. While supplying in the range of / min (for example, 400 cc / min), He gas is supplied in the range of 50-200 cc / min (for example, 100 cc / min) through the supply pipe 1027.

At this time, while maintaining a wafer temperature of 200 to 400 ° C. (for example, 350 ° C.), the pressure is adjusted to 100 to 200 Pa (for example, 133 Pa) to adjust the plasma power of about 400 KHz to the lower electrode 1062. Apply 100 ~ 300W (for example, 150W). In this manner, an insulator barrier film having a thickness of about 100 to 400 kPa is formed on the wafer 7. Then, the valve 1032 is closed to stop the supply of the trimethylsilyltrimethylmethane gas and the N ₂ O gas. On the other hand, the insulating barrier film formed under the above parentheses was about 4.3 in dielectric constant and about 60 GPa in Young's modulus. The light having a wavelength of 6328 kHz was irradiated to the insulator barrier film as in the He-Ne laser, and the refractive index was 1.7 or more.

Then, the wafer 7 is conveyed to the 2nd chamber 2 by the method similar to the case of Embodiment 1, and in the 2nd chamber 2, the range of 200-400 degreeC (for example, 350) ° C), the inside of the second chamber 2 is exhausted under the condition of 100 to 266 Pa (for example, 133 Pa), N ₂ gas is flowed through 100 to 300 cc / min (for example, 200 cc / min), By irradiating the low pressure mercury light having a wavelength of 185 + 254 nm and a power of 10 mW / cm 2 from the lamp 3 in the range of 30 to 120 s (for example, 60 s), the ultraviolet ray annealing treatment of the wafer 7 is performed. It was.

In order to examine the diffusion barrier property of copper of the insulator barrier film, a copper thin film having a thickness of about 1000 mW was provided on the insulator barrier film having a thickness of 400 mW, and annealing was performed at 400 ° C. for 4 hours in N ₂ . . Afterwards, the diffusion of copper in the copper insulation barrier was examined by a secondary ion mass spectrometer (SIMS).

As a result, the insulator barrier film was only up to a depth of 5 nm or less from the interface with the copper thin film, and copper diffusion from the copper film was not seen. In addition, the IV characteristic after annealing of the insulator barrier film was 10 ^-9 A / cm <2> in the voltage of IMV / cm unchanged before annealing.

[Modification]

The type of gas supplied through the supply pipe 1022 is replaced with hexamethyldisilazane [(CH ₃ ) ₃ Si-NH- (CH ₃ ) ₃ ] gas from trimethylsilyltrimethylmethane gas. Then, hexamethyldisilazane gas is supplied in the range of 10 to 150 cc / min (for example, 75 cc / min) through the supply pipe 1022, and N ₂ O gas is supplied through the supply pipe 1023 to 100 ~. While supplying in the range of 800 cc / min (for example, 400 cc / min), you may supply He gas in the range of 50-200 cc / min (for example, 100 cc / min) through the supply pipe 1027.

The insulating barrier film formed using this reaction gas had a dielectric constant of about 4.30 and a Young's modulus of about 65 GPa. Moreover, as for the said insulating barrier film, the light which has a wavelength of 6328 GHz was irradiated like a He-Ne laser, and the refractive index was 1.7 or more. In addition, the thickness of the insulator barrier film was formed in 100-400 GPa. Further, the ultraviolet annealing treatment of the wafer 7 was performed, and under the same conditions as in the case of the embodiment (2), the secondary ion mass spectrometer (SIMS) found out the diffusion of the copper in the copper insulation barrier. Only to the depth of 5 nm from the surface, the copper diffusion from the copper film was not seen. In addition, the insulator barrier film was 10 ^-9 A / cm <2> in the voltage of IMV / cm unchanged before and after the annealing IV characteristic.

<Embodiment 3>

In the semiconductor device manufactured using the semiconductor manufacturing apparatus described in Embodiments 1 and 2, the voids on the surface of the insulator barrier film are sealed and the barrier effect is sufficiently high. For this reason, this semiconductor device is small and thin. For this reason, this semiconductor device can be used suitably for the following electronic devices.

(1) Display apparatuses, such as a liquid crystal, plasma, and electroluminescence (EL).

Display devices, such as liquid crystal, plasma, organic EL (electoluminescence), etc. which accompany a television, a personal computer, etc., are equipped with the semiconductor device for driving each pixel independently.

The semiconductor device includes a scan signal wire for transmitting a scan signal, an image signal line for transmitting an image signal, a thin film transistor including an interlayer insulating film connected to the scan signal wire and an image signal line, and connected to the thin film transistor. The pixel electrode, the insulating film which insulates a scanning signal wiring, and the insulating film which insulates a thin film transistor and an image signal line are provided.

The thin film transistor is a switching element that switches on / off of the image signal transmitted through the image signal line to the pixel electrode in accordance with the scan signal transmitted through the scan signal wiring.

Display devices are in high demand for thinning. Thin liquid crystal televisions, thin plasma televisions, thin liquid crystal displays, and the like are typical. Therefore, when the semiconductor device of this embodiment is adopted as the display device, the display device can be thinned.

(2) Imaging devices such as digital cameras and digital still cameras

Digital cameras, digital still cameras, and the like also have a high demand for miniaturization and thinning as in the case of display devices. In particular, since a digital camera or the like is usually carried in many cases, the semiconductor device of the present embodiment may be employed to realize miniaturization. Therefore, when the semiconductor device of this embodiment is adopted for the imaging device, the imaging device can be miniaturized.

(3) Image forming apparatuses such as facsimile printers and scanners

BACKGROUND ART Image forming apparatuses, such as facsimile, have often been complex with telephones and the like. Therefore, not only the image forming apparatus but also this type of multifunction device is required to be downsized. Therefore, when the semiconductor device of this embodiment is employ | adopted for an image forming apparatus and the multifunction apparatus containing this, miniaturization of these image forming apparatus etc. is attained.

(4) optical devices such as CLC elements and light emitting laser devices

For example, an optical pickup unit that reads information about a magneto-optical recording medium including CD, MD, DVD, etc., uses light from the magneto-optical recording medium to an electric signal by means of a photoelectric conversion element and a photoelectric conversion element. A semiconductor device having a thin film transistor for transmitting the converted optical signal is provided. Therefore, when the semiconductor device of this embodiment is employ | adopted as an optical apparatus, these optical apparatuses can be miniaturized.

As mentioned above, although the various electronic device apparatus was illustrated, if it is an electronic device apparatus which has a semiconductor device, it is not limited to what was illustrated above. Therefore, for example, the electronic device device of the present embodiment also includes a memory embedded in a communication device such as a cellular phone, an information processing device such as a personal computer, or a removable memory.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic block diagram of the semiconductor manufacturing apparatus of Embodiment 1 of this invention.

FIG. 2 is a schematic configuration diagram of the first chamber 1 of FIG. 1.

FIG. 3 is a schematic configuration diagram of the second chamber 2 of FIG. 1.

<Description of Major Codes in Drawings>

1: first chamber 2: second chamber

3: lamp 4: quartz pipe

5: inert gas 6: heater

7: wafer 8: pin

9: light receiving sensor

Claims (12)

A reactor is provided with the means which processes the semiconductor wafer of manufacture object with the reaction gas of the state which is easy to cut | disconnect compared with another functional group, The semiconductor manufacturing apparatus characterized by the above-mentioned. The reaction gas is a semiconductor manufacturing apparatus, characterized in that the proportion of the reactor having oxygen or carbon is 20% to 30%. The method of claim 1, wherein the reaction gas comprises a siloxane gas, a methylsilane gas, or a silyl gas, and the number of methoxy groups, ethoxy groups, n-propoxy groups, or ethyl groups is calculated from the methyl groups in the respective gases. It is several or less, The semiconductor manufacturing apparatus characterized by the above-mentioned. The semiconductor manufacturing apparatus according to claim 1, wherein the reaction gas is a hydrocarbon gas having an OH group, an ethoxy group, an n-propoxy group, or an ethyl group. The semiconductor manufacturing apparatus according to claim 1, wherein an oxidant gas containing an O ₂ gas, a CO ₂ gas, a H ₂ O gas, an N ₂ O gas, or an alcohol gas is mixed with the reaction gas. The semiconductor manufacturing apparatus according to claim 1, wherein a diluent gas containing He gas is mixed with the reaction gas. The semiconductor manufacturing apparatus according to claim 1, further comprising means for irradiating ultraviolet light to the semiconductor wafer subjected to the treatment. The semiconductor manufacturing apparatus according to claim 4, wherein each of the means is provided in the same or different chambers. A reactor is a semiconductor manufacturing method characterized by processing the semiconductor wafer of manufacture object by reaction gas of the conditions which are easy to be cut | disconnected compared with another functional group. Dielectric constant is 2.0-2.5, Young's modulus is 5-8Gpa, A reactor having a low dielectric constant film produced by plasma CVD using a reaction gas in a state that is easily cleavable compared to other functional groups. Dielectric constant is 3.5 to 5.5, Thickness is 100 ~ 400Å, The refractive index of light having a wavelength of 6328 GHz is 1.7 or more, It is formed on the copper film, And a reactor having an insulator barrier film produced by plasma CVD using a reaction gas under conditions that are likely to be cut compared to other functional groups. An electronic device comprising a semiconductor device manufactured by the semiconductor manufacturing method shown in claim 9.

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