200849378 九、發明說明 【發明所屬之技術領域】 本發明係有關對於介入存在有分割於周方向之環狀的 中間構件，其內側空間及外側空間之一方乃大氣環境，而 另一方爲真空環境，將此等兩環境氣密地區分之密封構造 ’具有特徵之真空容器，耐壓容器及此等密封方法。 【先前技術】 例如，包含於FPD ( Flat Panel Display )基板的表面 ’形成電路圖案之工程，而針對在其工程係於基板施以蝕 刻或擺鍍，CVD( Chemical Vapor Deposition)等之電紫 處理，而作爲進行如此之電漿處理的裝置，係例如可舉出 平行平板電漿處理裝置。 此種電漿處理裝置係具備於處理容器內之處理空間， 構成下部電極之載置台，和平行地設置於其載置台之上部 ，具備處理氣體之供給孔的上部電極，並且，對於在基板 處理時，處理空間則做爲真空抽出之同時，藉由前述氣體 供給孔而供給處理氣體至處理容器內，當處理空間成爲特 定之壓力時，於上部電極施加高頻率，於此等上部電極與 下部電極之間形成電場，根據經由此電場所形成之處理氣 體的電漿，於前述載置台上之基板，實施處理。 圖1 3係爲表示其電漿處理裝置之一例的縱斷側面之 構成，而其電漿處理裝置1係具備作爲接地之處理容器1 1 ’而處理容器1 1係經由處理容器主體1 1 a及上蓋1 1 b所 -4- 200849378 構成，圖中1 1 C係爲閘式閥，圖中π d，1 1 e係爲爲了將 處理容器11內做爲氣密之〇環，而圖12係爲構成基板B 之載置台的下部電極，電性連接於電漿產生用之高頻率電 源1 3，而下部電極12係藉由額緣狀之墊片（中間構件） 1 4，設置於處理容器1 1之底板上，並其墊片1 4係由經由 鐵氟龍（登錄商標）等之絕緣構件所構成之情況，下部電 極1 2係從處理容器1 1電性地浮隔。 對於下部電極1 2之上方係設置有平板狀之上部電極 1 5，支撐於角板狀之上部電極基座1 6，上部電極1 5及上 部電極基座1 6係例如由鋁所構成，而圖中1 6 a係爲處理 氣體之擴散空間，經由上部電極1 5與於上部電極基座1 6 下面，分散設置於橫方向所形成之凹部所形成，而上部電 極基座1 6係藉由額緣狀之墊片（中間構件）1 7而支撐於 處理容器1 1之頂部，前述墊片1 7係爲了從處理容器1 1 使上部電極1 5電性地做爲浮隔，而墊片1 4同樣地經由絕 緣構件所構成，而對於經由上部電極基座1 6，墊片1 7及 處理容器1 1之頂部所構成之上部空間1 7a，係配設有氣體 供給源18及連接於前述擴散空間16a之氣體供給管18a， 當從氣體供給源1 8，藉由氣體供給管1 8a而供給處理氣體 於擴散空間16a時，其處理氣體係藉由設置於上部電極15 之氣體供給孔1 5 a而供給至前述基板B上的處理空間S。 但，通常，高頻率電源1 3係因設置於大氣環境中， 故經由下部電極1 2，墊片1 4及處理容器1 1之底板所圍住 之下部空間1 4a，則有做爲大氣環境所構成之情況，此情 -5- 200849378 況，處理空間S係有必要呈保持其真空度地從下部空間 1 4 a所區劃。 以往係爲了進行處理空間S與下部空間1 4a之區劃， 而墊片1 4係未設置接口或間隙之一體性係地所形成，也 就是使用一體形狀之構成，並且，如圖14所示，藉由Ο 環10，10而呈在下部電極12與處理容器11之底面夾持 墊片14地構成，而圖中10a係爲爲了引導0環而言著墊 片1 4之形狀所設置的溝。 但，FPD基板之大型化的進展，伴隨於此，如此之電 漿處理裝置亦作爲大型化，而墊片1 4亦必須成爲較以往 爲大之構成，但對於製造如此做爲大型化之墊片1 4，配合 其尺寸而一體地形成絕緣構件之情況則變爲困難，另外， 從可加工其形成之絕緣構件的加工機亦被限制之情況，製 造如此做爲大型化之墊片1 4之情況則變爲困難。 另外，通常，氣體供給源1 8因亦設置在處理容器1 1 外之大氣環境中，故有著由墊片1 7及上部電極基座1 6所 圍住之上部空間1 7 a則呈成爲大氣環境地所構成之情況’ 針對在此情況，處理空間S，則爲了亦呈保持其真空度地 從上部空間1 7a而區劃，墊片1 7係與墊片1 4同樣地有必 要爲一體成形，並該墊片17係呈藉由〇環10，1〇而夾持 於處理容器1 1之頂面與上部電極基座1 6之間地所構成’ 但，作爲伴隨著裝置的大型化而有必要成爲大型之構成的 結果，而產生其製造變爲困難之問題。 200849378 【發明內容】 [欲解決發明之課題] 本發明係爲依據如上述之情事所做爲之構成’其目的 爲提供針對在介入存在有分割於周方向之環狀的中間構件 ，其內側空間及外側空間之一方乃大氣環境’而另一方爲 真空環境，亦含有中間構件之分割構件間的間隙而可區分 中間構件之內外的環境（作爲氣密的密封）之真空谷帘1 ’ 耐壓容器及此等密封方法。 [爲了解決課題之手段] 本發明之真空容器係屬於具備一面側及另一面側則各 自緊密於第1構件及第2構件而介入存在於此等構件之間 ，並由分割於周方向之複數的分割構件而成之中間構件， 由其中間構件所圍住之內側空間及該中間構件之外側空間 之中的一方乃大氣環境，而另一方爲真空環境之真空容器 ，其特徵乃具備沿著前述中間構件而形成爲環狀之同時， 爲了氣密地堵住該中間構件與前述第1構件之間，而以按 壓於此等之間的狀態，介入存在之彈性體而成之環狀的第 1密封部， 和沿著前述中間構件而形成爲環狀之同時，爲了氣密 地堵住該中間構件與前述第2構件之間，而以按壓於此等 之間的狀態’介入存在之彈性體而成之環狀的第2密封部 和爲了氣密地堵住相互鄰接之前述分割構件之間，而 -7- 200849378 沿著前述中間構件而形成爲環狀，一方的周緣及另一方的 周緣則各自緊密於第1密封部及第2密封部的密封部； 前述密封部係設置於大氣環境側，或前述中間構件乃 分割內側部分與外側部分而設置於其間者。 前述第1構件係爲容器主體之壁部，前述中間構件係 亦可呈圍住形成於前述壁部之開口部地所設置，此情況， 例如以前述中間構件所圍住之內側空間乃大氣環境，前述 第2構件係爲爲了在真空容器內使電漿產生的電極，前述 中間構件係經由爲了將其電極，對於前述容器主體之壁部 作爲絕緣之絕緣材所構成，另外，此情況，前述電極係亦 可爲爲了將平板顯示用之玻璃基板作爲電漿處理之平行平 板型電漿裝置之電極。 例如’對於前述第1構件及中間構件相互對向的面之 至少一方，係亦可設置崁合第1密封部之溝部，另外，對 於前述第2構件及中間構件相互對向的面之至少一方，係 亦可設置崁合第2密封部之溝部，另外，例如一體地形成 前述密封部與第1密封部及第2密封部。 本發明之耐壓容器係屬於具備一面側及另一面側則各 自緊密於第1構件及第2構件而介入存在於此等構件之間 ，並由分割於周方向之複數的分割構件而成之中間構件， 由其中間構件所圍住之內側空間及該中間構件之外側空間 之中的一方乃構成爲第1壓力之第1環境，而另一方構成 爲較第1壓力爲低之第2壓力的第2環境之耐壓容器，其 特徵乃具備沿著前述中間構件而形成爲環狀之同時，爲了 -8- 200849378 氣密地堵住該中間構件與前述第1構件之間，而以按壓於 此等之間的狀態，介入存在之彈性體而成之環狀的第1密 封部， 和沿著前述中間構件而形成爲環狀之同時，爲了氣密 地堵住該中間構件與前述第2構件之間，而以按壓於此等 之間的狀態，介入存在之彈性體而成之環狀的第2密封部 和爲了氣密地堵住相互鄰接之前述分割構件之間，而 沿著前述中間構件而形成爲環狀，一方的周緣及另一方的 周緣則各自緊密於第1密封部及第2密封部的密封部； 前述密封部係設置於第1環境側，或前述中間構件乃 分割爲內側部分與外側部分而設置於其間者。 本發明之真空容器的密封方法係屬於具備一面側及另 一面側則各自緊密於第1構件及第2構件而介入存在於此 等構件之間，並由分割於周方向之複數的分割構件而成之 中間構件，使用於由其中間構件所圍住之內側空間及該中 間構件之外側空間之中的一方乃大氣環境，而另一方爲真 空環境之真空容器的密封方法，其特徵乃具備：將沿著前 述中間構件而形成爲環狀之彈性體而成之第1密封部，經 由以按壓於該中間構件與前述第1構件之間的狀態而使其 介入存在之情況，氣密地塞住此等之間的工程， 和將沿著前述中間構件而形成爲環狀之彈性體而成之 第2密封部，經由以按壓於該中間構件與前述第2構件之 間的狀態而使其介入存在之情況，氣密地塞住此等之間的 -9- 200849378 工程， 和將沿著前述中間構件而形成爲環狀之密封部，經由 使一方的周緣及另一方的周緣則各自緊密於第1密封部及 第2密封部之情況，氣密地堵住相互鄰接之前述分割構件 之間的工程； 前述密封部係設置於大氣環境側，或前述中間構件乃 分割爲內側部分與外側部分而設置於其間者。 本發明之耐壓容器的密封方法係屬於具備一面側及另 一面側則各自緊密於第1構件及第2構件而介入存在於此 等構件之間，並由分割於周方向之複數的分割構件而成之 中間構件，使用於由其中間構件所圍住之內側空間及該中 間構件之外側空間之中的一方構成爲第1壓力之第1環境 ’而另一方構成爲較第1壓力爲低之第2壓力的第2環境 之耐壓容器的密封方法，其特徵乃具備：將沿著前述中間 構件而形成爲環狀之彈性體而成之第1密封部，經由以按 壓於該中間構件與前述第1構件之間的狀態而使其介入存 在之情況，氣密地塞住此等之間的工程， 和將沿著前述中間構件而形成爲環狀之彈性體而成之 第2密封部，經由以按壓於該中間構件與前述第2構件之 間的狀態而使其介入存在之情況，氣密地塞住此等之間的 工程， 和將沿著前述中間構件而形成爲環狀之密封部，經由 使一方的周緣及另一方的周緣則各自緊密於第1密封部及 第2密封部的情況，氣密地塞住相互鄰接之前述分割構件 -10- 200849378 之間的工程 前述密封部係設置於第1環境側，或前述中間構件乃 分割爲內側部分與外側部分而設置於其間者。 [發明之效果] 如根據本發明，對於具備介入存在於第1構件及第2 構件間的中間構件，區分以中間構件所圍住之內側空間及 外側空間的環境，因將中間構件的兩面，經由沿著該中間 構件而形成爲環狀之第1密封部及第2密封部，各自進行 密封之同時，設置沿著中間構件而形成爲環狀，一方的周 緣及另一方的周緣則各自緊密於第1密封部及第2密封部 的密封部，故中間構件即使分隔於周方向，針對在此等間 隙，亦可容易且確實地區分大氣環境與真空環境，因此， 從可採用中間構件分割於周方向之構造情況，中間構件即 使爲大型化，亦可作爲分割構件之組合而製造，例如，從 FPD基板作爲大型化之情況，對於使從容器主體爲了電性 絕緣電漿處理裝置之電極的中間構件之絕緣材，介入存在 於電極與容器主體之壁部之間的情況，從可分割其絕緣材 而構成之情況，製造則有變爲容易之效果。 另外，如根據其他的發明，中間構件及史分割於周方 向，針對在此等之間隙，亦可容易且確實地區分爲第1壓 力之第1環境與爲較第1壓力爲低之第2壓力的第2環境 ，隨之同樣地，可採用中間構件分割於周方向之構造情況 ，中間構件即使爲大型化，亦可作爲分割構件之組合而製 -11 - 200849378200849378 IX. OBJECT OF THE INVENTION [Technical Field] The present invention relates to an intermediate member having an annular shape divided into a circumferential direction for intervention, wherein one of the inner space and the outer space is an atmospheric environment, and the other is a vacuum environment. These two environments are airtightly divided into a sealed structure 'having a characteristic vacuum container, a pressure resistant container and such a sealing method. [Prior Art] For example, the surface of the FPD (Flat Panel Display) substrate is formed to form a circuit pattern, and the electro violet process such as etching or pendulum plating, CVD (Chemical Vapor Deposition), etc. is applied to the substrate of the engineering. As a device for performing such plasma treatment, for example, a parallel plate plasma processing device can be mentioned. The plasma processing apparatus is provided in a processing space in the processing container, a mounting table constituting the lower electrode, and an upper electrode provided in parallel with the upper portion of the mounting table, and having a supply hole for the processing gas, and is processed on the substrate. At the same time, the processing space is supplied as a vacuum, and the processing gas is supplied into the processing container through the gas supply hole. When the processing space becomes a specific pressure, a high frequency is applied to the upper electrode, and the upper electrode and the lower portion are applied. An electric field is formed between the electrodes, and the substrate on the mounting table is processed according to the plasma of the processing gas formed through the electric field. Fig. 13 is a configuration showing a longitudinal side surface of an example of a plasma processing apparatus, and the plasma processing apparatus 1 is provided with a processing container 1 1 ' as a ground, and the processing container 1 1 is via a processing container main body 1 1 a And the upper cover 1 1 b is -4- 200849378. In the figure, 1 1 C is a gate valve, and π d, 1 1 e is used to make the inside of the processing container 11 as a hermetic ring, and FIG. 12 The lower electrode of the mounting table constituting the substrate B is electrically connected to the high-frequency power source 13 for plasma generation, and the lower electrode 12 is disposed by the margin-shaped spacer (intermediate member) 1 4 . The bottom plate of the container 1 is composed of an insulating member such as Teflon (registered trademark), and the lower electrode 12 is electrically floated from the processing container 11. A flat upper electrode 15 is provided above the lower electrode 12, and is supported by the gusset upper electrode base 16. The upper electrode 15 and the upper electrode base 16 are made of, for example, aluminum. In the figure, 16 a is a diffusion space of the processing gas, which is formed by the upper electrode 15 and the concave portion formed in the lateral direction under the upper electrode base 16 6 , and the upper electrode base 16 is formed by The rim-shaped spacer (intermediate member) 17 is supported on the top of the processing container 1 1 , and the spacer 17 is used to electrically discharge the upper electrode 15 from the processing container 1 1 as a spacer. 14 is similarly configured by an insulating member, and a gas supply source 18 is provided and connected to the upper space 17a formed by the top of the upper electrode base 16, the spacer 17 and the processing container 1 1 When the gas supply pipe 18a of the diffusion space 16a supplies the process gas to the diffusion space 16a from the gas supply source 18 by the gas supply pipe 18a, the process gas system is provided by the gas supply hole provided in the upper electrode 15. Processing to the aforementioned substrate B at 1 5 a Between S. However, in general, since the high-frequency power source 13 is installed in the atmosphere, the lower space 1 4, the spacer 14 and the bottom plate of the processing container 1 1 surround the lower space 14a, and it is used as an atmospheric environment. In the case of the situation, in the case of the case -200549378, it is necessary for the processing space S to be partitioned from the lower space 14 a to maintain its vacuum. In the past, in order to perform the division of the processing space S and the lower space 14a, the spacer 14 is formed by not providing an interface or a gap, that is, using an integral shape, and, as shown in FIG. The ferrules 10 and 10 are formed by sandwiching the spacer 14 between the lower electrode 12 and the bottom surface of the processing container 11, and in the figure, 10a is a groove provided in the shape of the spacer 14 for guiding the 0-ring. . However, the progress of the enlargement of the FPD substrate has been accompanied by the increase in size of the plasma processing apparatus, and the spacer 14 has to be formed to be larger than the conventional one. In the case of the sheet 14 in which the insulating member is integrally formed in accordance with the size thereof, it becomes difficult, and in addition, the processing machine which can process the insulating member is also limited, and the gasket which is thus enlarged is manufactured. The situation becomes difficult. Further, in general, since the gas supply source 18 is also disposed in the atmosphere outside the processing container 1 1 , the upper portion of the space is surrounded by the spacer 17 and the upper electrode base 16 and becomes atmospheric. In the case of the environment, the space S is partitioned from the upper space 17a in order to maintain the degree of vacuum. The spacer 17 is integrally formed in the same manner as the spacer 14. And the spacer 17 is formed by being sandwiched between the top surface of the processing container 1 1 and the upper electrode base 16 by the ring 10, 1 ', but as the device is enlarged. It is necessary to become a result of a large composition, which causes problems in which manufacturing becomes difficult. 200849378 [Problem to solve the problem of the invention] The present invention is based on the above-described circumstances. The purpose of the present invention is to provide an intermediate member having an annular member that is divided into a circumferential direction in the intervention, and an inner space thereof. And one of the outer spaces is the atmospheric environment and the other is a vacuum environment, and also contains a gap between the divided members of the intermediate members to distinguish the inside and outside of the intermediate member (as a hermetic seal) vacuum valley curtain 1 ' withstand voltage Container and such sealing method. [Means for Solving the Problem] The vacuum container according to the present invention is provided with one surface side and the other surface side, and is closely interposed between the first member and the second member, and is interposed between the members, and is divided into plural numbers in the circumferential direction. The intermediate member formed by the divided member, one of the inner space surrounded by the intermediate member and the outer space of the intermediate member is an atmospheric environment, and the other is a vacuum container of a vacuum environment, which is characterized by The intermediate member is formed into a ring shape, and is formed in a ring shape by interposing the elastic body in a state of being pressed between the intermediate member and the first member in an airtight manner. The first sealing portion is formed in a ring shape along the intermediate member, and intervenes in a state of being pressed between the intermediate member and the second member in an airtight manner. The second seal portion formed of an elastic body and the partition member that is adjacent to each other are hermetically sealed, and -7-200849378 is formed in a ring shape along the intermediate member, and one circumference is formed. And the other of the peripheral edge of each seal portion to close the first sealing portion and second sealing portion; Department of the sealing portion is provided on the atmosphere side, or the intermediate member is the inner portion and the outer split portions are provided therebetween. The first member is a wall portion of the container body, and the intermediate member may be provided to surround an opening formed in the wall portion. In this case, for example, the inner space surrounded by the intermediate member is an atmospheric environment. The second member is an electrode for generating plasma in a vacuum container, and the intermediate member is formed by insulating the wall portion of the container body with an electrode thereof, and in this case, The electrode system may be an electrode of a parallel plate type plasma device for treating a glass substrate for flat panel display as a plasma. For example, at least one of the surfaces facing the first member and the intermediate member may be provided with a groove portion that is joined to the first sealing portion, and at least one of the surfaces facing the second member and the intermediate member. Further, a groove portion for the second sealing portion may be provided, and the sealing portion, the first sealing portion, and the second sealing portion may be integrally formed, for example. The pressure-resistant container of the present invention is composed of a plurality of divided members that are interposed between the members and the second member, and are interposed between the members and the second member, and are interposed therebetween. The intermediate member, one of the inner space surrounded by the intermediate member and the outer space of the intermediate member is configured as the first environment of the first pressure, and the other is configured to be the second pressure lower than the first pressure The pressure vessel of the second environment is characterized in that it is formed in a ring shape along the intermediate member, and is sealed between the intermediate member and the first member in an airtight manner in order to -8-200849378. In the state between these, the first sealing portion which is formed by the elastic body which is interposed is interposed, and the intermediate member is formed in a ring shape along the intermediate member, and the intermediate member and the first portion are sealed in an airtight manner. 2 between the members, in a state of being pressed between them, interposed between the second sealing portion formed by the elastic body existing and the gas-tightly blocking the mutually adjacent divided members, and along The aforementioned intermediate member In the annular shape, the peripheral edge of one of the circumferences and the other periphery are tightly sealed to the sealing portions of the first sealing portion and the second sealing portion; the sealing portion is provided on the first environment side, or the intermediate member is divided into the inner portion and The outer portion is disposed therebetween. The sealing method of the vacuum container according to the present invention is a divided member that is provided between the members having the one side and the other side and is closely interposed between the first member and the second member, and is interposed between the members in the circumferential direction. The intermediate member is a sealing method for a vacuum container in which one of the inner space surrounded by the intermediate member and the outer space of the intermediate member is an atmospheric environment, and the other is a vacuum environment, and is characterized by: The first sealing portion formed as an annular elastic body along the intermediate member is hermetically inserted by being pressed between the intermediate member and the first member. The second seal portion formed by forming an annular elastic body along the intermediate member is caused to be pressed between the intermediate member and the second member. In the case of intervention, the -9-200849378 project between these and the sealing member formed in an annular shape along the intermediate member is hermetically inserted, and one of the circumference and the other is The peripheral edges are closely spaced between the first sealing portion and the second sealing portion, and hermetically block the work between the mutually adjacent divided members; the sealing portion is disposed on the atmospheric environment side, or the intermediate member is divided It is provided between the inner portion and the outer portion. The sealing method of the pressure-resistant container according to the present invention is a divided member that is provided between the members having the one side and the other side and is closely interposed between the first member and the second member, and is interposed between the members and the circumferential direction. The intermediate member is formed such that one of the inner space surrounded by the intermediate member and the outer space of the intermediate member is configured as the first environment of the first pressure and the other is configured to be lower than the first pressure. In the second environment pressure vessel sealing method of the second pressure, the first sealing portion formed by forming an annular elastic body along the intermediate member is pressed to the intermediate member. In the case of intervening with the first member, the project between the two is hermetically sealed, and the second seal is formed by forming an annular elastic body along the intermediate member. The portion is interposed by being pressed in a state of being pressed between the intermediate member and the second member, and the process between the two members is hermetically sealed, and the intermediate member is formed in a ring shape along the intermediate member. Seal In the case where one of the circumferences and the other of the circumferences are close to the first sealing portion and the second sealing portion, the sealing portion between the mutually adjacent divided members -10-200849378 is hermetically sealed. The intermediate member is disposed on the first environment side, or the intermediate member is divided into an inner portion and an outer portion and disposed therebetween. [Effect of the Invention] According to the present invention, the intermediate member interposed between the first member and the second member is provided with an environment in which the inner space and the outer space surrounded by the intermediate member are separated, and the two sides of the intermediate member are The first sealing portion and the second sealing portion which are formed in an annular shape along the intermediate member are sealed while being formed in an annular shape along the intermediate member, and one of the peripheral edges and the other peripheral edge are closely spaced. Since the intermediate member is separated from the circumferential direction by the sealing portion of the first sealing portion and the second sealing portion, the atmospheric environment and the vacuum environment can be easily and accurately distinguished in the gaps. Therefore, the intermediate member can be divided. In the case of the structure in the circumferential direction, even if the intermediate member is enlarged, it can be manufactured as a combination of divided members. For example, when the FPD substrate is enlarged, the electrode from the container body is used as an electrode for the electrically insulating plasma processing apparatus. The insulating material of the intermediate member is interposed between the electrode and the wall portion of the container body, and is formed by dividing the insulating material thereof. In addition, manufacturing has the effect of becoming easy. Further, according to another aspect of the invention, the intermediate member and the history are divided into the circumferential direction, and the first environment in which the first pressure is easily and the second portion is lower than the first pressure can be easily and surely divided. In the second environment of the pressure, the intermediate member can be divided into the circumferential direction. The intermediate member can be used as a combination of the divided members even if the intermediate member is enlarged. -11 - 200849378
【實施方式】 [爲了實施發明之最佳型態] (第1實施型態） 以下，關於就將本發明之真空容器，適用於對於FPD 基板B而言，進行蝕刻處理之電漿處理裝置的例，參照圖 1之同時進行說明，而圖1之電漿處理裝置2係具備爲了 對於基板B實施蝕刻處理之做爲接地的角筒型之處理容器 2 1，其處理容器2 1係相當於針對在專利申請範圍之真空 容器，而處理容器2 1係具備由平面形狀構成爲四角形狀 的鋁而成，頂部作爲開口之容器主體2 1 A，和呈堵住其容 器主體2 1 A之頂開口部地所設置之上蓋2 1 B，而此等容器 主體21A與上蓋21B係爲了保持處理容器21內之處理空 間S的氣密性而藉由A環22a所接合，另外，對於容器主 體2 1 A之側壁係開口有基板B之運送口 22，經由閘式閥 G而構成爲開閉自由，而圖中22b係爲閘式閥G在關閉狀 態，爲了保持處理空間S之氣密性的Ο環。 對於構成容器主體21 A之底板23上係設置有構成基 板B之載置部的角型載置台3，當亦參照圖2及圖3同時 進行說明時，其載置台3係具備爲了形成電漿之下部電極 3 1，和罩蓋32，和將下部電極3 1支撐於底板23上之中間 構件的墊片3 3，和襯墊3 6 (在圖2中方便上未記載）， 下部電極3 1係形成爲角板狀，罩蓋3 2係呈圍住下部電極 -12- 200849378 3 1及墊片3 3之側周地形成爲環狀，其上部係做爲朝向內 側，被覆下部電極3 1之段差3 1 a之凸緣所形成，下部電 極31之上面’和其罩蓋3 2之凸緣的上面係構成平坦面， 構成基板B之載置面，然而，基板B係例如，一邊形成爲 2200mm，另一邊形成爲2500mm程度之大小的角型。 墊片3 3係例如經由鐵氟龍（登錄商標）等之絕緣構 件所構成之情況，形成爲沿著下部電極3 1的邊之角環狀 ，經由其墊片3 3與罩蓋3 2 ’下部電極3 1則成爲從處理容 器21，電性地充分浮隔之狀態，如圖2所示，墊片3 3係 呈圍住開口於下部電極3 1之中央下方的孔2 4及開口於其 孔24之周圍的孔25地，設置於底板23上，另外，對於 墊片3 3之上面，係形成有沿著該墊片3 3之形狀的環狀的 溝3 4，而墊片3 3係經由構成環圈之角部的L字型之4個 墊片構件3 3 A，和構成環圈以外之部分的直線型之4個墊 片構件3 3 B所構成，墊片構件3 3 A，3 3 B係呈可自由地連接 及分割地所構成。 返回至圖1，對於下部電極3 1之中心部係連接導電路 41之一端，而其導電路41之另一端係藉由處理容器21之 底板23的孔25而引出於處理容器21之外，並藉由整合 器42a而連接於例如13.56 MHz之電漿產生用之高頻率電 源42。 底板23的孔25係將下方側擴徑而形成段部，對於其 孔2 5，係插入有從底板1 2之下面側支撐下部電極3 1之同 時’爲了固定於底板上之筒狀的固定用構件43，對於固定 -13- 200849378 用構件43之下方，係呈對應於前述段部地形成凸緣，另 外，在前述下部電極31之下面，於對應於固定用構件4 3 的孔44之位置，設置有孔3 1 b，對於孔3 1 b的周面係穿過 螺絲，並且，對應於形成於孔3 1 b之螺絲的棒螺絲4 5則 從底板2 3之下面側貫通孔44，由插入於孔3 1 b之情況， 下部電極3 1係固定於底板23上。 接著，亦參照爲載置台3之角部的分解斜視圖之圖4 同時，進行說明，如圖4所示，對於處理容器21之底板 23的表面，係形成有對應於墊片3 3之形狀的環狀的溝26 ，另外，對於下部電極3 1之下面係對應於墊片3 3的溝3 4 ，呈相互重疊地形成環狀的溝3 5。 另外，對於由處理容器2 1之墊片3 3所圍住之內側範 圍係設置有爲密封構件之襯墊3 6，而其襯墊3 6係被作爲 一體形成，例如爲撓性，具有彈性之環狀的薄片，朝外方 彎曲，其縱斷面則呈成爲朝向外方而開口之〕形狀地所形 成之構成，其剖面之U形狀之兩緣部係如後述，呈崁入於 既述之各溝26,3 4,3 5地構成膨脹於上下之密封部3 7,3 8, 然而，作爲襯墊3 6之材質係例如使用橡膠或樹脂等，例 如亦可使用如布之可撓性之材質，而亦可使用如其實施形 態，固定形狀之板狀體，如圖3所示，襯墊3 6係呈圍住 處理容器2 1之底板23的孔24,25地所構成。 當參照圖4同時，關於就載置台3之製造方法進行說 明時，首先，使襯墊3 6之下側的密封部3 8崁入於處理容 器21之底板23的溝26，接著，連接墊片構件33 A，33B， -14- 200849378 形成墊片33，將其墊片33載置於前述底板23上，接著 於墊片3 3的溝3 4，使襯墊3 6之上側的密封部3 7崁入 然後，下部電極3 1之下面的溝3 5與墊片3 3之上面的 34呈重疊地，將下部電極31載置於墊片33上，接著， 固定用構件4 3插入於孔2 5，經由棒螺絲4 5，使下部電 3 1固定於底板2 3。 圖5係表示此時之載置台3的縱斷側面，由呈按壓 入存在於底板23與墊片33之間的密封部38及介入存 於墊片3 3與下部電極3 1之間的密封部3 7地拴住棒螺 4 5之情況，密封部3 8則經由其復原力而緊密於底板2 3 墊片3 3之同時，密封部3 7則經由其復元力而緊密於墊 33及下部電極，而底板23及墊片33之間隙及墊片33 下部電極31之間隙則被密封，也就是，密封部37,38 爲相當於以往之Ο環之構成，襯墊3 6係可看做一體地 成2個0環與設置於此等之間的i片薄片部之構成，如 經由進行密封之情況，即使爲分割墊片33之構成，作 大氣環境所構成，從由襯墊3 6，下部電極3 1及底板2 3 圍住之下部空間3 A區劃處理空間S，而該處理空間S 做爲真空抽出時，亦維持其真空度，而在密封之後，於 部電極31及墊片33的周圍，安裝罩蓋32，製造載置台 〇 返回圖1，呈圍住載置台3地，對於處理容器21之 板2 3係開口有排氣口 5 1，排氣口 5 1係藉由排氣路徑 ，連接例如由真空幫浦而成之真空排氣手段5 3，經由其 溝 將 極 介 在 絲 及 片 與 係 形 此 爲 所 則 下 3 底 5 2 真 -15- 200849378 空排氣手段53’將處理空間S作爲真空徘氣，該處理空 間s則維持成所期望的真空度地所構成。 針對在載置台3之上方，對於處理容器2 1之頂部的 下面係形成有凹部，並呈埋入於其凹部地，設置有爲了供 給處理氣體於載置台3上之基板B的上部氣體供給機構6 ’而上部氣體供給機構6係具備呈與載置台3之表面地所 設置之上部電極6 1，和支撐其上部電極6 1之上部電極基 座62，和墊片63及絕緣構件65，而上部電極61係例如 經由鋁，作爲角型之平板所構成，對於其下面係例如於橫 方向’形成有複數之凹部，而各凹部係由蓋於前述上部電 極6 1之情況，形成處理氣體之擴散空間62a。 上部電極基座62係例如上部電極基座62經由鋁所構 成，藉由設置於該上部電極基座6 2之周緣部上的角型環 狀之墊片63而安裝於處理容器21之頂部，而其墊片63 係與載置台3之墊片3 3同樣地所構成，分割自由地構成 於對應於墊片33之墊片構件33A的墊片構件63A與對應 於墊片構件33B的墊片構件63B，而墊片63係與墊片33 同樣地經由鐵氟龍（登錄商標）等之絕緣構件所構成之情 況，另外，呈圍住上部電極61，上部電極基座62及墊片 63之側周地設置有環狀之絕緣構件65，經由其絕緣構件 6 5及墊片6 3，上部電極基座6 2及上部電極6 1則成爲從 處理容器2 1，電性地充分浮隔之狀態。 圖6係爲表示處理容器21之墊片63及其周圍的構成 之分解斜視圖，如此圖所示，對於上部電極基座6 2之上 -16- 200849378 面，處理容器2 1之頂部下面，係呈對應於墊片63的形狀 地，各自形成溝62b，27，另外，對於墊片63之上面，係 形成有對應於墊片3 3的溝3 4之溝6 4，另外，圖中6 6係 爲襯墊，與載置台3之襯墊36同樣地所構成，具備各自 對應於密封部3 7,3 8的密封部67,6 8。 密封部68則崁入於上部電極基座62的溝62b而夾持 於上部電極基座62與墊片63之間的同時，密封部67則 呈崁入於溝64,27地夾持於墊片63與處理容器21之頂部 ，並由呈按壓密封部67,68地所構成之情況，經由各密封 部67,68，密封上部電極基座62與墊片63之間的間隙及 墊片63與處理容器2 1之頂部之間的間隙。 襯墊66係呈圍住開口於處理容器2 1之頂部中央的孔 28地所設置，即使由如此所構成之情況，分割墊片63之 構成，由上部電極基座62，襯墊66及處理容器21之頂部 所圍住，從做爲大氣環境所構成之上部空間6A，區劃處 理空間S，將該處理空間S作爲真空抽出時，亦維持其真 空度。 返回至圖1，對於上部電極基座62之各擴散空間62a 係連接氣體供給管69之一端，而氣體供給管69之另一端 係相互作爲合流，藉由前述空間6 A及孔2 8而引出於處理 容器21外，並且，所引出之氣體供給管6 9之另一端係連 接於處理氣體供給源60 ’另外，對於上部電極基座62係 連接導電路46之一端，而其導電路46之另一端係藉由孔 28而引出於處理容器21外’並連接於阻抗調整機構47， -17- 200849378 而阻抗調整機構47係包含電容成分，具有使均一之電漿 產生於處理容器21內之作用。 接著，關於就電漿蝕刻裝置2之處理動作，進行說明 ，當開啓閘式閥G，經由不圖示之運送機構，將基板B搬 入至處理容器21內，載置於載置台3上時，關閉閘式閥 G，經由真空排氣手段5 3，將處理空間S進行排氣，成爲 真空環境，此時，爲了經由襯墊3 6,66而各自作爲密封， 而下部電極3 1之下部空間3 A及上部電極6 1之上部空間 6 A係爲持爲大氣環境，當開始真空抽出時，從處理氣體 供給源60，藉由氣體供給管69而對於擴散空間62a供給 處理氣體，例如C12,SF6，CF4等之鹵素系氣體，維持處理 容器21內爲特定之壓力。 然後，經由高頻率電源42，對於載置台3，上部電極 6 1間供給高頻率電力，將處理氣體作爲電漿化，並經由其 電漿，進行對於基板B之蝕刻處理，在蝕刻處理結束後， 停止高頻率電力之供給及處理氣體之供給，基板B係經由 不圖示之運送機構而運出於處理容器21之外。 如根據其實施形態，墊片3 3與下部電極3 1，處理容 器21之底板23之間則各自以襯墊36之密封部37,3 8所 密封，並且，因分割墊片3 3，故對於爲其分割之構件的墊 片構件33 A，33B係有間隙，但其間隙係因經由襯墊36之 密封部所堵住，故處理容器2 1內之處理空間S則由襯墊 36與下部電極31所圍住，從爲大氣環境之下部空間3A 作爲區劃，在處理空間S作爲真空抽出時而維持其處理空 -18- 200849378 間s之真空度，隨之，因可對於各墊片構件33A，33B製造 墊片3 3，故因可縮小控制爲了進行製造而必要之材料的尺 寸，而控制經由加工機而限制從其材料的製造者，作爲其 結果，如此之墊片3 3的製造則變爲容易，另外，由縮小 控制材料的尺寸情況，所使用的材質選定幅度則變廣。 另外，關於墊片6 3，亦與墊片3 3同樣地分割爲墊片 構件63A，63B，但此等構件間的間隙係因經由襯墊66所 堵住，故處理空間S則從大氣環境之上部空間6 A所區劃 ，處理空間S作爲真空抽出時而維持其真空度，隨之，因 可對於各墊片構件63 A，63B製造墊片構件63，故因可縮 小控制爲了進行製造而必要之材料的尺寸，墊片63的製 造則變爲容易，另外，由縮小控制材料的尺寸情況，所使 用的材質選定幅度則變廣。 然而，針對在上述實施形態，各墊片3 3，6 3之分割數 ，分割形狀並不限於上述的例，另外，亦可如在背景技術 的攔而表示墊片3 3，6 3之任--方地作爲一體形狀之構成 〇 接著，參照圖7的同時，關於就爲了密封下部電極3 1 之下方的下部空間3 A之襯墊及墊片的其他構成例而進行 說明，圖7係爲適用此等襯墊及墊片的載置台之分解斜視 圖，圖中的襯墊71係經由與襯墊36同樣的材質而構成爲 環狀，但與襯墊3 6不同，未彎曲成12形狀，而呈伸長於 上下地所形成，其上下端係做爲各自對應於密封部37,38 之密封部7 2，7 3所構成。 -19- 200849378 另外，其載置台係具備形成爲矩形之方 墊片構件74A及墊片構件75A，而墊片構件 自排列呈環狀，在墊片構件74A之間，墊片 間，相互分割及連接自由地所構成’由作爲 形成角型環狀之墊片74,75，而圖8係表示 裝於底板23上之墊片74,7 5的狀態’如此 74,75係具有各自不同之口徑，呈從外周側 夾持襯墊7 1地所形成，在此係說明的方ί 74,75，但此係可看作將墊片分割成內側部ί 之構造者。 另外，圖9係表室安裝於底板2 3上之蠻 墊7 1及下部電極3 1之縱剖面，如此圖所示 的高度係呈支撐襯墊71之同時，可支撐下部 對應於襯墊7 1之高度地所構成。 如圖9所示，當構成載置台之各部安裝 時，按壓密封部72，經由其復元力而緊密於 上側角部及溝3 5內，而同樣按壓密封部73 力而緊密於墊片74,75之下側角部及溝26 間3 Α區劃處理空間S，而針對在如此之構 分割的構件而形成墊片，故得到與上述之實 效果。 接著，參照圖10之同時，更加地關於: 他下部空間3 A之構成例而進行說明，而針 之載置台係具備與墊片3 3略同樣地所構成 塊狀的多數之 74A，75A 係各 •構件75A之 連接之情況而 從上方而視安 圖所示，墊片 ，內周側各自 更上分作墊片 分與外側部分 丨片74,75 ，襯 ，墊片74,75 ;電極3 1地， 於底板23上 墊片74,75之 ，經由其復元 內，從下部空 成，因亦經由 施形態同樣的 就爲了密封其 對在其構成例 之環狀的墊片 -20- 200849378 8 1，對應於墊片3 3之墊片構件3 3 A的墊片構件8 1 A與對 應於墊片構件3 3 B之墊片構件8 1 B，分割自由地所構成’ 但於其上面未形成有溝，另外，前述載置台係與襯墊36 略同樣地，具備縱剖面則呈成爲〕形狀地所構成之襯墊8 2 ，但，對於襯墊8 2之前端係如襯墊3 6地未設置有密封部 ，而取代此，對於載置台係對應於其密封部，設置與襯墊 36各體之Ο環（樹脂製之環狀的密封構件）83，84 ’作爲 0環83,84之材質，係例如使用作爲構成襯墊36之材質而 舉出之構成。 如圖1 1所示，各自崁入〇環8 3，8 4於下部電極3 1的 溝3 5，底板2 3的溝2 6，由從上下夾持經由此等下部電極 3 1及底板2 3，將墊片8 1夾持於之間之襯墊8 2的情況， 使〇環83緊密於下部電極3 1及襯墊82之同時，使Ο環 84緊密於底板23及襯墊82，從下部空間3A區劃處理空 間S，而針對在如此之構成，因亦經由分割的構件而形成 墊片8 1，故得到與上述之實施形態同樣的效果，然而，構 成上述襯墊82之材質，係使用作爲構成襯墊36之材質而 舉出之橡膠或樹脂。 圖7及圖1 0所示之墊片及襯墊之構造係亦可作爲密 封上部空間6A之構成而適用者。 針對在上述之實施形態，係表示中間構件之內側則作 爲大氣環境，而外側則作爲真空環境而各自所構成的例， 但本發明之真空容器係對於將中間構件之內側則作爲真空 環境，而將外側則作爲大氣環境而各自所構成的情況，亦 -21 - 200849378 可適用，圖1 2 ( a ) ， （ b )係爲表示如此之真空容器9的 構成，而該真空容器9係經由下側做爲開口之第1構件9 1 ，上側做爲開口之第2構件92，作爲4分割之環狀的中間 構件93及襯墊94 (在圖2 ( a )中係方便上省略）所構成 ，襯墊94係與襯墊3 6同樣地所構成，但如圖1 2 ( b )所 示，與襯墊3 6不同，其縱斷側面則呈成爲開口於內側之 〕形狀地所形成，並由襯墊9 4之密封部9 5，密封第1構 件9 1與中間構件9 3之間的同時，襯墊94之密封部96， 密封第2構件92與中間構件93之間的情況，真空容器9 內則從容器9外部之大氣環境所區劃，呈成爲真空環境地 所構成，而針對在如此之實施形態，對於製造中間構件9 3 ，因亦可對各分割之各部分進行製造，故縮小控制對於爲 了製造中間構件93而必要之材料的尺寸。 對於圖1 2 ( c )，係例如表示將內側空間做爲陽壓的 耐壓容器90，其耐壓容器90係與前述真空容器9同樣地 所構成，具備第1構件91，第2構件9 2，中間構件9 3， 此情況，對應於前述襯墊94之襯墊97係呈從耐壓容器90 內圍上中間構件93地所設置，其縱剖面係成爲開口於外 側之3形狀，圖中9 8係相互固定第1構件91，中間構件 93及第2構件92之固定部，如此構成耐壓容器之情況， 亦得到如上述，與構成真空容器之情況同樣的效果。 【圖式簡單說明】 [圖1 ]係爲本發明之實施形態的電漿蝕刻裝置之縱剖 -22- 200849378 面圖。 [圖2]係爲設置於前述電漿蝕刻裝置之載置台的分解 斜視圖。 [圖3]係爲構成前述載置台之墊片及襯墊的斜視圖。 [圖4]係爲構成針對在前述載置台之下部空間的各部 之分解斜視圖。 [圖5 ]係爲構成前述下方空間之各部的縱斷側面圖。 [圖6 ]係爲構成設置於前述電漿蝕刻裝置之上部空間 的各部之分解斜視圖。 [圖7 ]係爲表示構成前述下方空間之各部的其他構成 例之分解斜視圖。 [圖8]係爲表示構成前述下方空間之墊片的上面圖。 [圖9 ]係爲構成前述上部氣體供給機構之上部電極基 座及上部電極之下側斜視圖。 [圖1 0 ]係爲表示構成前述下方空間之各部的又其他構 成例之分解斜視圖。 [圖1 1 ]係爲構成前述下方空間之各部的縱斷側面圖。 [圖12]係爲表示本發明之真空容器及耐壓容器之構成 的說明圖。 [圖1 3 ]係爲以往之電漿触刻裝置之縱剖面圖。 [圖14]係爲構成設置於前述電漿鈾刻裝置之載置台的 各部之分解斜視圖。 【主要元件符號說明】 -23- 200849378 B :基板 3 ·載置台 3 A :下部空間 6 :上部氣體供給機構 6 A :上部空間 2 1 :處理容器 21 A :容器主體 21B :上蓋 2 3 :底板 24 :孔 25 :孔 26 :溝 3 1 :下部電極 3 1 a :段差 3 1 b ··孔 3 2 :罩蓋 33 :墊片 33A，33B :墊片構件 34 :溝 35 :溝 36 :襯墊 3 7,3 8 ：密封部 41 :導電路 42 :高頻率電源 -24 200849378 43 :固定用構件 44 :孔 5 1 :排氣口 5 2 :排氣路徑 5 3 :真空排氣手段 60 :處理氣體供給源 6 1 :上部電極 6 1 a :氣體供給孔 62 :上部電極基座 6 2 a :擴散空間 63 :墊片 66 :襯墊 69 :氣體供給管 S :處理空間 71 :襯墊 7 2，7 3 :密封部 74,75 :墊片 74A，75A :墊片構件 81 :墊片 82 :襯墊 83,84 : Ο 環 90 :耐壓容器 91 :第1構件 92 :第2構件 -25 200849378 93 :中間構件 9 4 :襯墊 9 5，9 6 :密封部 97 :襯墊 -26[Embodiment] [In order to carry out the best mode of the invention] (First embodiment) Hereinafter, the vacuum container of the present invention is applied to a plasma processing apparatus which performs etching treatment on the FPD board B. For example, the plasma processing apparatus 2 of FIG. 1 is provided with a rectangular cylinder type processing container 2 1 for grounding the substrate B, and the processing container 2 1 is equivalent to the processing container 2 1 . For the vacuum container in the scope of the patent application, the processing container 21 is formed of aluminum having a square shape in a planar shape, the top as the open container body 2 1 A, and the top of the container body 2 1 A is blocked. The upper cover 2 1 B is provided in the opening portion, and the container main body 21A and the upper cover 21B are joined by the A ring 22a in order to maintain the airtightness of the processing space S in the processing container 21, and in addition, to the container main body 2 In the side wall of the 1A, the transport port 22 of the substrate B is opened, and is opened and closed via the gate valve G. In the figure, 22b is a state in which the gate valve G is closed, and the airtightness of the processing space S is maintained. ring. The angled mounting table 3 on which the mounting portion constituting the substrate B is provided on the bottom plate 23 constituting the container body 21 A is also described with reference to Figs. 2 and 3, and the mounting table 3 is provided to form a plasma. The lower electrode 3 1, and the cover 32, and the spacer 3 3 for supporting the lower electrode 31 on the intermediate member 23, and the spacer 36 (not shown in the convenience of FIG. 2), the lower electrode 3 1 is formed into a gusset shape, and the cover 32 is formed in a ring shape around the side of the lower electrode -12-200849378 3 1 and the spacer 3 3 , and the upper portion is oriented toward the inner side, and the lower electrode 3 1 is covered. The upper surface of the lower electrode 31 and the upper surface of the flange of the cover 32 are formed into a flat surface to constitute a mounting surface of the substrate B. However, the substrate B is formed, for example, on one side. It is 2200 mm, and the other side is formed into an angular shape of a size of about 2,500 mm. The spacer 3 3 is formed, for example, by an insulating member such as Teflon (registered trademark), and is formed to be annular along the corner of the side of the lower electrode 31, via the spacer 3 3 and the cover 3 2 ' The lower electrode 3 1 is electrically floated sufficiently from the processing container 21, and as shown in FIG. 2, the spacer 3 3 surrounds the opening 24 and the opening that is open below the center of the lower electrode 31. The hole 25 around the hole 24 is provided on the bottom plate 23. Further, on the upper surface of the spacer 3, an annular groove 34 along the shape of the spacer 33 is formed, and the spacer 3 is formed. 3 is formed by four L-shaped spacer members 3 3 A constituting a corner portion of the loop, and four linear spacer members 3 3 B constituting a portion other than the loop, and the spacer member 3 3 The A, 3 3 B system is constructed to be freely connectable and divided. Returning to FIG. 1, one end of the lower electrode 31 is connected to one end of the conductive circuit 41, and the other end of the conductive circuit 41 is led out of the processing container 21 by the hole 25 of the bottom plate 23 of the processing container 21. And connected to a high frequency power source 42 for plasma generation such as 13.56 MHz by the integrator 42a. The hole 25 of the bottom plate 23 is formed by expanding the diameter of the lower side to form a step portion, and the hole 25 is inserted with a cylindrical fixing for fixing the lower electrode 31 from the lower surface side of the bottom plate 1 2 for fixing to the bottom plate. The member 43 is formed below the member 43 for fixing -13 to 200849378 to form a flange corresponding to the above-mentioned segment, and below the lower electrode 31, to the hole 44 corresponding to the fixing member 43. The position is provided with a hole 3 1 b, the peripheral surface of the hole 3 1 b is passed through the screw, and the rod screw 4 5 corresponding to the screw formed in the hole 3 1 b passes through the hole 44 from the lower side of the bottom plate 2 3 . The lower electrode 31 is fixed to the bottom plate 23 by the insertion of the hole 3 1 b. Next, reference is also made to FIG. 4 which is an exploded perspective view of the corner portion of the mounting table 3, and as shown in FIG. 4, the surface of the bottom plate 23 of the processing container 21 is formed in a shape corresponding to the spacer 33. The annular groove 26 is formed, and the lower surface of the lower electrode 3 1 corresponds to the groove 3 4 of the spacer 33, and the annular groove 35 is formed to overlap each other. Further, the inner side surrounded by the gasket 3 3 of the processing container 21 is provided with a gasket 3 6 which is a sealing member, and the gasket 36 is integrally formed, for example, flexible and elastic. The annular sheet is formed to be curved outward, and its longitudinal section is formed to be outwardly opened. The two edges of the U-shaped cross section are as described below. Each of the grooves 26, 3 4, and 35 forms a sealing portion 3, 3, 8 which is expanded in the upper and lower portions. However, as the material of the spacer 36, for example, rubber or resin is used, and for example, a cloth such as cloth may be used. As the material of the flexible material, a plate-shaped body having a fixed shape as in the embodiment thereof may be used. As shown in Fig. 3, the spacer 36 is formed to surround the holes 24 and 25 of the bottom plate 23 of the processing container 21. Referring to Fig. 4, when the manufacturing method of the mounting table 3 is described, first, the sealing portion 38 on the lower side of the spacer 36 is inserted into the groove 26 of the bottom plate 23 of the processing container 21, and then, the connecting pad The sheet member 33 A, 33B, -14- 200849378 is formed with a spacer 33 on which the spacer 33 is placed, and then in the groove 34 of the spacer 33, the sealing portion on the upper side of the spacer 36 3 7, then, the lower groove 3 5 of the lower electrode 3 1 overlaps with the upper surface 34 of the spacer 3 3 , the lower electrode 31 is placed on the spacer 33 , and then the fixing member 43 is inserted. The hole 2 5 is fixed to the bottom plate 23 by the rod screw 4 5 . Fig. 5 shows the longitudinal side surface of the mounting table 3 at this time, and is sealed by pressing between the sealing portion 38 existing between the bottom plate 23 and the spacer 33 and interposed between the spacer 33 and the lower electrode 31. When the portion 3 7 grips the rod screw 4 5 , the sealing portion 38 is tightly attached to the bottom plate 23 by the restoring force, and the sealing portion 37 is close to the pad 33 via its recovery force. The lower electrode, and the gap between the bottom plate 23 and the spacer 33 and the gap between the lower electrode 31 of the spacer 33 are sealed, that is, the sealing portions 37, 38 are equivalent to the conventional ring structure, and the spacer 36 can be seen. The configuration of the i-sheet portion which is integrally formed between the two 0-rings and the like, and if it is sealed, even if it is a configuration of the divided spacer 33, it is constituted by the atmosphere, and the spacer 3 is formed. 6. The lower electrode 3 1 and the bottom plate 2 3 surround the lower space 3 A to divide the processing space S, and the processing space S maintains the vacuum degree when it is vacuum-extracted, and after the sealing, the partial electrode 31 and the pad A cover 32 is attached around the sheet 33, and the mounting table is manufactured. Returning to FIG. 1 to surround the mounting table 3, the processing capacity is The plate 2 3 of the device 21 has an exhaust port 5 1 , and the exhaust port 5 1 is connected to a vacuum exhausting means 5 3 such as a vacuum pump by an exhaust path, and the pole is interposed in the wire via the groove. The film and the system are the same as the bottom 3 5 5 -15 - 200849378 The air venting means 53 ′ is configured to use the processing space S as vacuum helium, and the processing space s is maintained at a desired degree of vacuum. Above the mounting table 3, a concave portion is formed on the lower surface of the top portion of the processing container 2, and is embedded in the concave portion thereof, and an upper gas supply mechanism for supplying the processing gas to the substrate B on the mounting table 3 is provided. 6', the upper gas supply mechanism 6 is provided with an upper electrode 161 provided on the surface of the mounting table 3, and an upper electrode base 62 supporting the upper electrode 61, and a spacer 63 and an insulating member 65. The upper electrode 61 is formed of, for example, aluminum as an angular flat plate, and a plurality of concave portions are formed on the lower surface, for example, in the lateral direction, and each concave portion is covered by the upper electrode 61 to form a processing gas. Diffusion space 62a. The upper electrode base 62 is formed, for example, by an aluminum electrode base 62, and is attached to the top of the processing container 21 by an angular ring-shaped spacer 63 provided on the peripheral edge portion of the upper electrode base 62. On the other hand, the spacer 63 is formed in the same manner as the spacer 33 of the mounting table 3, and is formed separately from the spacer member 63A corresponding to the spacer member 33A of the spacer 33 and the spacer corresponding to the spacer member 33B. In the case of the member 63B, the spacer 63 is formed of an insulating member such as Teflon (registered trademark) in the same manner as the spacer 33, and surrounds the upper electrode 61, the upper electrode base 62, and the spacer 63. An annular insulating member 65 is provided on the side, and the upper electrode base 6 2 and the upper electrode 61 are electrically and sufficiently floated from the processing container 2 1 via the insulating member 65 and the spacer 63. status. Figure 6 is an exploded perspective view showing the structure of the gasket 63 of the processing container 21 and its surroundings. As shown in the figure, for the upper surface of the upper electrode base 6 2 - 16 - 200849378, under the top of the processing container 2 1 The grooves 62b, 27 are formed corresponding to the shape of the spacer 63, and the groove 64 of the groove 3 4 corresponding to the spacer 33 is formed on the upper surface of the spacer 63. The 6 series is a spacer, and is configured similarly to the spacer 36 of the mounting table 3, and includes sealing portions 67 and 68 corresponding to the sealing portions 3, 3, 8 8 respectively. The sealing portion 68 is inserted into the groove 62b of the upper electrode base 62 and sandwiched between the upper electrode base 62 and the spacer 63, and the sealing portion 67 is caught in the groove 64, 27 and clamped to the pad. The sheet 63 and the top of the processing container 21 are formed by pressing the sealing portions 67, 68, and the gap between the upper electrode base 62 and the spacer 63 and the spacer 63 are sealed via the respective sealing portions 67, 68. A gap with the top of the processing vessel 21. The spacer 66 is provided to surround the hole 28 that is open at the center of the top of the processing container 21, and even if it is configured as such, the configuration of the spacer 63 is composed of the upper electrode base 62, the spacer 66, and the treatment. The upper portion of the container 21 is surrounded, and the upper space 6A is formed as an atmospheric environment, and the processing space S is divided. When the processing space S is evacuated as a vacuum, the degree of vacuum is maintained. Returning to Fig. 1, each of the diffusion spaces 62a of the upper electrode base 62 is connected to one end of the gas supply pipe 69, and the other ends of the gas supply pipe 69 are joined to each other, and are taken out by the space 6 A and the holes 28 Outside the processing container 21, the other end of the drawn gas supply pipe 619 is connected to the processing gas supply source 60'. In addition, the upper electrode base 62 is connected to one end of the conducting circuit 46, and its conducting circuit 46 is The other end is led out of the processing container 21 by the hole 28 and is connected to the impedance adjusting mechanism 47, -17-200849378. The impedance adjusting mechanism 47 includes a capacitance component having a uniform plasma generated in the processing container 21. effect. Next, the processing operation of the plasma etching apparatus 2 will be described. When the gate valve G is opened and the substrate B is carried into the processing container 21 via a transport mechanism (not shown) and placed on the mounting table 3, The gate valve G is closed, and the processing space S is exhausted via the vacuum exhausting means 5 3 to be in a vacuum environment. At this time, in order to pass through the spacers 3, 66, respectively, the lower portion of the lower electrode 3 1 is sealed. 3 A and the upper electrode 6 1 upper space 6 A is held in an atmosphere, and when the vacuum extraction is started, the processing gas is supplied from the processing gas supply source 60 to the diffusion space 62a by the gas supply pipe 69, for example, C12. The halogen-based gas such as SF6 or CF4 maintains a specific pressure in the processing container 21. Then, high-frequency power is supplied to the mounting table 3 via the high-frequency power source 42, and the processing gas is plasma-treated, and the substrate B is etched through the plasma, and after the etching process is completed. The supply of the high-frequency power and the supply of the processing gas are stopped, and the substrate B is transported out of the processing container 21 via a transport mechanism (not shown). According to the embodiment, the gasket 3 3 and the lower electrode 31 and the bottom plate 23 of the processing container 21 are each sealed by the sealing portions 37, 38 of the gasket 36, and because the gasket 3 3 is divided, The spacer members 33 A, 33B for the members to be divided are provided with a gap, but the gap is blocked by the sealing portion of the spacer 36, so that the processing space S in the processing container 21 is composed of the spacer 36 and The lower electrode 31 is surrounded by a space 3A which is an atmosphere lower region, and maintains a vacuum of -18-200849378 s when the processing space S is evacuated as a vacuum, and accordingly, for each spacer Since the members 33A and 33B manufacture the spacers 3 3, since it is possible to reduce the size of the material necessary for manufacturing, the control is limited to the manufacturer of the material from the processing machine, and as a result, the spacers 3 3 It is easy to manufacture, and the size of the material to be used is widened by reducing the size of the control material. Further, the spacer 63 is also divided into the spacer members 63A and 63B in the same manner as the spacer 33. However, since the gap between the members is blocked by the spacer 66, the processing space S is from the atmospheric environment. The upper space 6A is partitioned, and the processing space S maintains the degree of vacuum as vacuum extraction. Accordingly, since the spacer member 63 can be manufactured for each of the spacer members 63 A and 63B, the control can be reduced for manufacturing. The size of the necessary material is easy to manufacture the spacer 63, and the size of the material to be used is widened by reducing the size of the control material. However, in the above embodiment, the number of divisions of the spacers 3 3, 6 3 and the division shape are not limited to the above-described examples, and the spacers 3 3, 6 3 may be represented as in the background art. - The configuration of the square shape as an integral shape Next, with reference to Fig. 7, the other configuration examples of the spacer and the spacer for sealing the lower space 3A below the lower electrode 3 1 will be described. The spacer 71 in the figure is formed in a ring shape by the same material as the spacer 36, but is not bent into 12, except for the spacer 36. The shape is formed by being elongated above and below, and the upper and lower ends are formed as sealing portions 72, 73 corresponding to the sealing portions 37, 38, respectively. -19- 200849378 In addition, the mounting table has a square spacer member 74A and a spacer member 75A formed in a rectangular shape, and the spacer members are arranged in a ring shape, and are interposed between the spacer members 74A and the spacers. And the connection is freely formed by the spacers 74, 75 which form the angular ring shape, and FIG. 8 shows the state of the spacers 74, 75 mounted on the bottom plate 23, so that 74 and 75 are different. The caliber is formed by sandwiching the spacer 7 1 from the outer peripheral side, and is described here as 74, 75, but this can be regarded as a structure for dividing the spacer into the inner portion ί. In addition, FIG. 9 is a longitudinal section of the rough pad 7 1 and the lower electrode 3 1 which are mounted on the bottom plate 2 3 , and the height shown in the figure is the support pad 71 while the lower part corresponds to the pad 7 . The height of 1 is composed. As shown in Fig. 9, when the respective portions constituting the mounting table are mounted, the sealing portion 72 is pressed, and the sealing portion 72 is pressed tightly in the upper corner portion and the groove 35, and the sealing portion 73 is pressed to be close to the spacer 74. The lower side corner portion of the 75 and the groove 26 are arranged to divide the processing space S, and the spacer is formed for the member divided in such a configuration, so that the above-described effects are obtained. Next, with reference to Fig. 10, a description will be given of a configuration example of the lower space 3A, and the needle mounting table is provided with a plurality of blocks 74A and 75A which are formed in a block shape similarly to the spacer 33. The connection of each member 75A is as shown in the above view from the top, and the inner circumference side of the spacer is further divided into a spacer portion and an outer portion gusset 74, 75, a lining, a spacer 74, 75; On the bottom plate 23, the spacers 74, 75 on the bottom plate 23 are vacant from the lower portion through the recovery thereof, because the same shape is applied to seal the annular gasket -20- in the configuration example thereof. 200849378 8 1, the spacer member 8 1 A corresponding to the spacer member 3 3 A of the spacer 3 3 and the spacer member 8 1 B corresponding to the spacer member 3 3 B are formed by freely dividing 'but The groove is not formed on the upper surface, and the spacer is provided with a spacer 8 2 which is formed in a shape similar to the spacer 36 in a longitudinal direction. However, the front end of the spacer 8 2 is a spacer. The sealing portion is not provided in the third place, and instead of the mounting portion, the mounting portion is provided with the gasket 36. The ring body Ο (cyclic resin of the sealing member) 83 and 84 'as the material of the ring 83, 84 0, the lines such as a material constituting the spacer 36 and constitutes exemplified. As shown in Fig. 11, each of the cymbals 8 3, 8 4 is inserted into the groove 3 5 of the lower electrode 3 1 , and the groove 2 6 of the bottom plate 2 3 is clamped from above and below via the lower electrode 3 1 and the bottom plate 2 3. In the case where the spacer 8 1 is sandwiched between the spacers 8 2 , the ankle ring 83 is tightly attached to the lower electrode 3 1 and the spacer 82, and the ankle ring 84 is tightly attached to the bottom plate 23 and the spacer 82. The processing space S is divided from the lower space 3A, and the spacer 8 is formed by the divided members in such a configuration. Therefore, the same effects as those of the above-described embodiment are obtained. However, the material of the spacer 82 is formed. A rubber or a resin exemplified as the material constituting the spacer 36 is used. The structure of the spacer and the spacer shown in Fig. 7 and Fig. 10 can also be applied as a configuration for sealing the upper space 6A. In the above-described embodiment, the inner side of the intermediate member is an atmospheric environment, and the outer side is configured as a vacuum environment. However, the vacuum container of the present invention has a vacuum environment for the inner side of the intermediate member. In the case where the outer side is configured as an atmospheric environment, it is also applicable to -21 to 49,378, and FIG. 1 2 (a) and (b) show the configuration of such a vacuum container 9, and the vacuum container 9 is passed through The first member 9 1 having the opening as the opening and the second member 92 as the opening on the upper side are formed as a four-part annular intermediate member 93 and a spacer 94 (which is omitted in FIG. 2 (a)) The spacer 94 is formed in the same manner as the spacer 36. However, as shown in Fig. 12 (b), unlike the spacer 36, the longitudinal side surface is formed to have an opening on the inner side. And the sealing portion 96 of the gasket 94 is sealed between the first member 91 and the intermediate member 9 by the sealing portion 95 of the gasket 94, and the sealing portion 96 of the gasket 94 seals between the second member 92 and the intermediate member 93. The inside of the vacuum container 9 is partitioned from the atmospheric environment outside the container 9, A vacuum atmosphere to the configuration, while for the case of the embodiment, for the manufacture of the intermediate member 93, due also be produced for each part of each division, the so narrow control 93 is sized intermediate member material necessary for the order. In the case of FIG. 1 2 (c), for example, a pressure-resistant container 90 in which the inner space is a positive pressure is formed, and the pressure-resistant container 90 is configured similarly to the vacuum container 9, and includes a first member 91 and a second member 9 2, the intermediate member 9 3, in this case, the spacer 97 corresponding to the spacer 94 is provided from the inner member 93 around the pressure resistant container 90, and its longitudinal section is formed into a shape of 3 openings on the outer side. In the case where the first member 91, the intermediate member 93, and the second member 92 are fixed to each other, the pressure-resistant container is configured as described above, and the same effects as those in the case of constituting the vacuum container are obtained as described above. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] is a longitudinal sectional view of a plasma etching apparatus according to an embodiment of the present invention, -22-200849378. Fig. 2 is an exploded perspective view showing a mounting table provided in the plasma etching apparatus. Fig. 3 is a perspective view showing a spacer and a spacer constituting the mounting table. Fig. 4 is an exploded perspective view showing the respective portions of the space below the mounting table. Fig. 5 is a longitudinal side view showing each of the portions constituting the lower space. Fig. 6 is an exploded perspective view showing the respective portions which are provided in the upper space of the plasma etching apparatus. Fig. 7 is an exploded perspective view showing another configuration example of the respective portions constituting the lower space. Fig. 8 is a top view showing a gasket constituting the aforementioned lower space. Fig. 9 is a perspective view showing the upper electrode base and the lower electrode of the upper gas supply mechanism. Fig. 10 is an exploded perspective view showing still another example of the configuration of each of the lower spaces. [Fig. 1 1] is a longitudinal side view showing each of the portions of the lower space. Fig. 12 is an explanatory view showing the configuration of a vacuum container and a pressure resistant container of the present invention. [Fig. 1 3] is a longitudinal sectional view of a conventional plasma etching device. Fig. 14 is an exploded perspective view showing the respective portions constituting the mounting table provided in the plasma uranium engraving apparatus. [Description of main component symbols] -23- 200849378 B : Substrate 3 · Mounting table 3 A : Lower space 6 : Upper gas supply mechanism 6 A : Upper space 2 1 : Processing container 21 A : Container main body 21B : Upper cover 2 3 : Base plate 24: hole 25: hole 26: groove 3 1 : lower electrode 3 1 a : step 3 1 b · hole 3 2 : cover 33: spacer 33A, 33B: spacer member 34: groove 35: groove 36: lining Pad 3 7, 3 8 : Sealing portion 41 : Conductor 42 : High frequency power supply - 24 200849378 43 : Fixing member 44 : Hole 5 1 : Exhaust port 5 2 : Exhaust path 5 3 : Vacuum exhaust means 60 : Process gas supply source 6 1 : upper electrode 6 1 a : gas supply hole 62 : upper electrode base 6 2 a : diffusion space 63 : spacer 66 : gasket 69 : gas supply pipe S : processing space 71 : gasket 7 2,7 3 : Sealing portion 74, 75: Gasket 74A, 75A: Gasket member 81: Gasket 82: Gasket 83, 84: Ο Ring 90: Pressure-resistant container 91: First member 92: Second member - 25 200849378 93 : Intermediate member 9 4 : Liner 9 5, 9 6 : Sealing portion 97 : Liner -26