KR100686284B1 - Upper electrode unit and plasma processing apparatus - Google Patents

Abstract

The present invention relates to an upper electrode unit and a plasma processing apparatus using the same. More particularly, the present invention relates to a configuration of an upper electrode unit that suppresses occurrence of abnormal discharge in the upper electrode portion when high frequency power is applied, and a plasma processing apparatus using the same. .

According to the present invention, the outer circumferential surface supporting member is fastened to the electrode plate, and the head of the means exposed during the fastening is covered by a shield ring having a flat surface and the same height as the silicon member. That is, by precisely contacting and fastening each part, it is possible to prevent damage to the upper electrode unit due to partial discharge generated in the micro-space inside the contact part, and to generate a stable plasma to ensure uniformity for the process performed on the surface of the substrate. .

In addition, the present invention can facilitate the assembly or disassembly work, it is possible to reduce the time and manpower required during the work.

Plasma, upper electrode unit, semiconductor, fastening means, vacuum chamber

Description

Upper electrode unit and plasma processing apparatus using the same {UPPER ELECTRODE UNIT AND PLASMA PROCESSING APPARATUS}

1 is an internal configuration diagram of a conventional plasma processing apparatus.

2 is an internal configuration diagram showing a plasma processing apparatus according to the present invention.

3A is a cross-sectional view of the upper electrode unit according to an embodiment of the present invention.

3B and 3C are partial cross-sectional views showing a silicon member and an outer circumferential surface supporting member according to an embodiment of the present invention.

4A and 4B are a plan view and a sectional view of a silicon member according to a modification of the embodiment of the present invention.

6A to 6D are a plan view and a cross-sectional view of an outer circumferential surface supporting member according to an embodiment of the present invention.

7A and 7B are a cross-sectional view and an enlarged view of an upper electrode unit according to another embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

10, 100: vacuum chamber 30: substrate

S: micro space 54: insulator

65, 650: DC high voltage power 21, 210: upper electrode plate

22, 220, 640: matching device 23, 230, 630: high frequency power supply

51, 510: electrostatic chuck 52, 520: lower electrode

60, 600, 700: gas supply line 20 , 200: upper electrode unit

280: gas outlet 300: substrate

400: silicon member 41, 410, 450: shield ring

540: insulation member 550: support member

430: outer peripheral surface support member 440: upper insulating support member

The present invention relates to an upper electrode unit and a plasma processing apparatus using the same, and more particularly, to an upper electrode unit and a plasma processing apparatus using the same to suppress abnormal discharge from occurring in the upper electrode unit when a high frequency power is applied.

As the semiconductor and display industries develop, processing of substrates such as wafers and glass is also progressing toward minimizing and integrating desired patterns in a limited area. Accordingly, plasma processing technology is widely used when growing or etching thin films on a substrate. Plasma treatment is widely used in processing processes of semiconductors, display substrates, etc. due to the advantages of being able to control the process with high precision. Plasma treatment devices are single- and batch-type devices. Among them, the single wafer plasma processing apparatus is disposed up and down in the vacuum chamber to generate a plasma by applying high frequency power between both electrodes.

Referring to FIG. 1, a general sheet type semiconductor plasma processing apparatus includes an upper electrode 21 in a vacuum chamber 10, and a substrate support member on which the semiconductor substrate, which is an object to be processed, is disposed opposite to the upper electrode 21. . The substrate support member includes a lower electrode 52 and an electrostatic chuck 51 to which power is applied. The upper electrode 21 and the lower electrode 52 face each other at a predetermined interval, and high frequency power matched from the outside is applied. The gas in the vacuum chamber 10 is ionized by the high frequency power applied to the upper and lower electrodes 21 and 52, and a high density plasma is generated in the space between the upper and lower electrodes 21 and 52. Here, an electrostatic chuck 51 for mounting a substrate is provided above the lower electrode 52, and the lower part of the lower electrode 52 is composed of an insulator 54. High frequency power is applied to the upper and lower electrodes 21 and 52 to generate plasma. In order to electrostatically attract the substrate 30 to the electrostatic chuck 51, direct current power is applied through a constant DC high voltage power source 65, and the substrate 30 is fixed to the electrostatic chuck 51. At this time, in the micro space S between the substrate 30 and the electrostatic chuck 51, heat transfer gas, for example, helium gas, is supplied through the heat transfer gas supply line 60 to facilitate temperature control of the substrate 30. Supplied. After a certain period of plasma treatment process, the helium gas is exhausted by the exhaust line, the substrate 30 which has been electrostatically adsorbed by the electrostatic chuck 51 is desorbed by the negative DC high voltage power supply 65 and the vacuum chamber 10 Are transported out.

When energy is applied to a gas particle, that is, a gas molecule or an atom, the outermost electrons move out of the orbit and become free electrons, and have positive charges, and electrons having negative charges with molecules or atoms are generated. A large number of these positively charged ions and electrons are collectively electrically neutral. The interaction of these particles produces unique light and high reactivity due to the active movement of the particles. This state is called plasma. In addition, various plasmas are formed by the electron density of the plasma forming situation and the temperature at that time.

The advantages of plasma treatment are that the plasma is gaseous, and the efficiency is very small, so the amount of waste generated during the process is very small, and the pollution can be considerably suppressed. It can be suppressed.

In order to ensure uniformity of the plasma, in the combination of the components inside the vacuum chamber in a vacuum state, the partial discharge of the minute gap generated inside the components is blocked, and the flow of the gas ejected from the electrode plate is controlled uniformly and uniformly. Therefore, it is very important how stable the plasma generated between the upper and lower electrodes is generated. In addition, plasma nonuniformity has emerged as an important problem of lowering the reliability of a target object. Variables that operate in the plasma process include high frequency power, frequency, electrode configuration and arrangement, reaction gas and mixing ratio, gas flow rate, pressure, bias voltage, and the like.

 In the atmosphere inside the vacuum chamber where the process is carried out in a vacuum, the presence of cracks, minute gaps in the dielectric and the formation of minute spaces in the fastening of each part, and the presence of shapes such as protrusions on a part, are largely performed in one component. Adversely affect the process. When the above problems occur, high frequency is applied to the upper and lower electrodes, which results in medium effect, concentration of electric field, partial discharge, and lowers the dielectric strength. If the process is repeated for a long time, the component is eventually destroyed. do.

Referring to FIG. 1, when looking at the upper electrode unit 20 inside the conventional plasma processing apparatus, there is a difference in height between the cross section of the lower silicon member 40 of the electrode plate 21 and the height of the shield ring 41 surrounding the electrode plate 21. Doing. This hinders the smooth flow of the gas, and the pressure difference is caused by the gas and the overall flow becomes unstable. This pressure difference eventually suppresses the generation of a stable plasma, and the etching uniformity of the workpiece is lowered. In addition, the shape and the fastening method of the electrode unit 20 is more complicated, resulting in a higher manufacturing cost, manpower and time is required during assembly and disassembly work, resulting in more losses.

Accordingly, the present invention was derived to solve the above problems, and eliminates the step difference between the lower surface of the silicon member and the lower surface of the shield ring surrounding the silicon member and maintains the pressure between the upper and lower electrodes to maintain a constant plasma. It provides an upper electrode and a plasma processing apparatus using the same.

Another object of the present invention is to properly conceal the head of the fastening means exposed when the silicon member is fastened to the upper electrode plate and the upper insulating support member with a shield ring, thereby concentrating the electric field on the head portion of the visible exposed fastening means, which is a high frequency power source. It is to provide a plasma processing apparatus for preventing abnormal discharge generated by the.

In order to achieve the above object, a plasma processing apparatus includes a silicon member having an upper electrode plate, a gas hole contacting one surface of the upper electrode plate, and a gas passing through the upper electrode plate, and an upper side of an outer circumferential surface of the silicon member. And an outer circumferential surface supporting member fastened to the outer circumferential portion of the upper electrode plate. The outer circumferential surface supporting member has a fastening means hole formed to penetrate vertically or horizontally, and penetrates the fastening means hole to fix the upper electrode plate and the outer circumferential surface supporting member. A convex portion is formed on any one of an inner circumferential surface of the outer circumferential surface support member and an outer circumferential surface of the silicon member in close contact with the inner circumferential surface, and a concave portion is formed on the other thereof to engage the convex portion. A shield ring having an outer circumferential surface and a lower surface of the outer circumferential surface support member and an inner circumferential surface in close contact with the lower side of the outer circumferential surface of the silicon member; It includes. The material of the outer circumferential surface support member of the gas supply device uses quartz, Teflon, polytetrafluoroethylene (PTEE), polychlorotrifluoroethylene (PCTFE), perfluoroalkoxy (PFA), aluminum or ceramic having a dielectric constant of 4 or less. The outer circumferential surface support member may be formed of two or more divided in a vertical angle and two or more separated in a vertical direction.

In addition, the upper electrode unit may be fastened in a left and right direction to a silicon member having an upper electrode plate, a gas hole in contact with one surface of the upper electrode plate and through which gas passes, and an upper side of an outer circumferential surface of the silicon member, And an upper insulating support member on which an outer circumferential surface of the upper electrode plate is seated. The upper insulating support member has a fastening means hole formed to pass through from side to side, and includes a fastening means for fixing the silicon member and the upper insulating member through the fastening means hole. The upper electrode unit has a shield ring having an outer circumferential surface and a lower surface of the upper insulating support member and an inner circumferential surface in which the lower side of the outer circumferential surface of the silicon member is in close contact, and the lower surface of the silicon member and the lower surface of the shield ring are formed at the same height. . The object to be processed by the plasma processing apparatus is a semiconductor wafer or a glass substrate.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail.

2 is a schematic cross-sectional view of a plasma processing apparatus according to the present invention.

Referring to FIG. 2, the plasma processing apparatus of the present invention supports a substrate in which the upper electrode unit 200 and the semiconductor substrate 300, which is an object to be processed, are mounted in the vacuum chamber 100 so as to face the upper electrode unit 200. A member is provided. The substrate support member includes a lower electrode 520 and an electrostatic chuck 510 to which power is applied.

The upper electrode unit 200 may include a gas outlet 280 that may be applied with RF power through the RF power supply 230 and the impedance matcher 220, and may introduce a reaction gas into the vacuum chamber 100. Can be.

A substrate loading / unloading port (not shown) is formed on the sidewall of the vacuum chamber, thereby carrying the substrate in and out. In addition, an exhaust system (not shown) such as a vacuum pump may be connected to the sidewall or the bottom of the vacuum chamber 100 so that exhaust may be performed to maintain the inside of the chamber 100 at a desired degree of vacuum.

The high frequency power source 630 is connected to the lower electrode 520 which is spaced apart from the upper electrode unit 200 and opposed to each other by a matching device 640. When the substrate is plasma-processed, for example, high frequency power of 2 MHz is supplied to the lower electrode 520 by the high frequency power source 630. The lower electrode 520 is installed at the bottom of the vacuum chamber 100 via the ground supporting member 550 and the insulating member 540, and therein, the substrate 300 is used to adjust the substrate 300 to a predetermined temperature. And a helium gas line supplied between the electrostatic chuck 510 is installed. In addition, an electrostatic chuck 510, which is a holding means for holding the substrate 300, for example, a semiconductor wafer, is provided on the upper surface of the lower electrode 520.

The electrostatic chuck 510 is formed in the same shape and size as the shape of the substrate to be mounted on the upper surface, but the shape is not particularly limited. For example, when the substrate is a semiconductor wafer, it is desirable to have a disk-like shape similar to that of the wafer, and the diameter of the upper surface is approximately similar to the diameter of the wafer. The electrostatic chuck 510 has a conductive member (not shown) inside, and the conductive member is connected to the high-voltage direct current source 650 to suck and hold the substrate 300 by applying a high voltage. In this case, the electrostatic chuck 510 may maintain the substrate 300 by a vacuum force and other mechanical force in addition to the electrostatic force.

The upper electrode unit supports the silicon member 400 and the silicon member 400 on which the gas supply line 700 into which gas is introduced from the gas supply source 290 and the predetermined number of gas ejection holes 280 and the heat exchanger is formed. The plate 210, the silicon member 400, and the upper electrode plate 210 are fixed to each other, and a circular shield ring 450 configured to conceal a certain portion. The specific configuration of the upper electrode unit will be described later.

The processing operation using the plasma processing apparatus will be described. When the substrate 300 is loaded from the carrying in / out port of the substrate 300 and mounted on the upper surface of the electrostatic chuck 510, a high voltage is applied from the high voltage DC power supply 650 to the electrostatic chuck 510 so that the substrate 300 has a constant power. The suction is held by the electrostatic chuck 510. Subsequently, helium gas is supplied to the micro space S through the supply line 600 so that the substrate 300 is adjusted to a desired temperature. Thereafter, the plasma processing gas is introduced from the gas supply source 290 installed in the upper electrode unit 200, and the vacuum chamber 100 is maintained at a predetermined pressure by using a vacuum pump. The high frequency power matched from the outside is applied to the upper electrode unit and the lower electrodes 200 and 520, the gas in the vacuum chamber 100 is ionized by the high frequency power, and generates a high density plasma in the space between the upper electrode unit and the lower electrode. Let's do it. Plasma processing such as dry etching is performed by such a high density plasma. When the plasma processing is completed, the power supply is stopped from the high voltage direct current power source 650 and the high frequency power sources 230 and 630, and the substrate 300 is carried out to the outside of the vacuum chamber 100 through the loading and unloading ports.

The configuration and arrangement of the upper electrode unit according to an embodiment of the present invention will be described in detail with reference to FIGS. 3A to 6D. 3A is a schematic diagram of an upper electrode unit according to an embodiment of the present invention, and FIG. 3B shows an enlarged view of region A of FIG. 3A. 3C is another embodiment of area A of FIG. 3B. 4A is a schematic diagram of an upper electrode unit according to a variation of an embodiment according to the present invention, and FIG. 4B shows an enlarged view of region B of FIG. 4A. 4C is another embodiment of region B of FIG. 4A. 5A and 5B show a plan view and a cross-sectional view of a silicon member, and FIGS. 6A and 6B show a plan view and a cross-sectional view of an outer circumferential surface supporting member fastened to the silicon member.

Referring to FIG. 3A, the upper electrode unit 200 is coupled to the silicon member 400 having the gas ejection opening 280 and the upper side of the outer circumferential surface of the silicon member 400, and the outer lower surface of the upper electrode plate 210 is connected to the upper electrode unit 200. Shield ring for supporting the outer peripheral surface supporting member 430, the upper insulating support 440 for fixing the outer peripheral surface of the upper electrode plate 210, the lower side of the outer peripheral surface and the outer peripheral surface supporting member 430 of the silicon member 400 It consists of 450.

The thickness of the silicon member 400 is 5 to 20 mm, and as shown in FIG. 3B, a convex portion is formed on the inner circumferential surface of the outer circumferential surface support member 430, and a convex portion is formed on the outer circumferential surface of the silicon member 400. A recess is formed. In addition, a plurality of fastening means holes penetrating the outer circumferential surface support member 430 up and down to fasten with the upper electrode plate 210 are formed at a predetermined distance apart from each other. Unlike this, as illustrated in FIG. 3C, recesses and convex portions may be formed on the inner circumferential surface of the outer circumferential surface support member 430 and the outer circumferential surface of the silicon member 400, respectively.

Also, referring to FIG. 4A, the upper electrode unit 200 is fastened to the silicon member 400 having the gas ejection opening 280 and the upper side of the outer circumferential surface of the silicon member 400, and the lower side of the outer circumferential surface of the upper electrode plate 210. The outer peripheral surface support member 430 to be fastened, the upper insulating support member 440 fixing the upper side of the outer circumferential surface of the upper electrode plate 210, and the lower side and the outer circumferential surface support member 430 of the silicon member 400 It consists of the shield ring 450 which supports. As shown in FIG. 4B, a plurality of fastening means holes penetrating the outer circumferential surface support member 430 from side to side to be fastened to the upper electrode plate 210 are formed to be spaced apart by a predetermined distance, and convex on the inner circumference of the outer circumferential surface support member 430 An additional portion is formed, and a concave portion corresponding to the convex portion is formed on the outer circumferential surface of the silicon main drain 400. Alternatively, as shown in FIG. 4C, recesses and protrusions may be formed on the inner circumferential surface of the outer circumferential surface support member 430 and the outer circumferential surface of the silicon member 400, respectively.

The gas ejection opening 280 is formed in the silicon member 400 of the upper electrode unit 200 is shown in the plan view of FIG. 5A and the cross-sectional view of FIG. 5B. A certain number of gas outlets 280 are formed to uniformly proceed the process. 5A and 5B, it can be seen that a certain number of gas ejection openings 280 are formed in the center portion so as not to affect the recessed portion of the silicon member 400.

6A, a convex portion to be fastened with a silicon member is formed on an inner circumferential surface of an outer circumferential surface support member according to an embodiment of the present invention, and a fastening means hole is formed to be fastened with a lower surface of an upper electrode plate. In the case of Fig. 3A, the diameter of the outer circumferential surface supporting member approximately coincides with the diameter with the lower convex portion of the upper electrode plate. In addition, in the case of Fig. 4A, the diameter of the inner circumferential surface of the outer circumferential surface supporting member and the lower convex portion of the upper electrode plate substantially coincide . Of course, in this case, when the outer circumferential surface supporting member is fastened in the lateral direction with the upper electrode plate, a fastening means hole is formed in the side of the outer circumferential surface supporting member.

When the convex portion or the concave portion of the outer circumferential surface support member 430 and the silicon member 400 are fastened to each other, the micro space does not exist inside. The material of the outer circumferential surface support member 430 is quartz, Teflon, PTEE (Polytetrafluoroethylene) And a material having low dielectric constant heat resistance such as polychlorotrifluorofluoro (PCTFE) or perfluoroalkoxy (PFA). For example, the dielectric constant is preferably 4 or less. In addition, aluminum, ceramic series, or the like can also be used.

The outer circumferential surface support member 430 illustrated in FIG. 6B may be formed by separating the upper and lower two or more numbers as necessary as shown in FIG. 6C, or may be configured by dividing at a predetermined angle as shown in FIG. 6D. have.

As such, the silicon member 400 may be fastened to the outer circumferential surface support member 430 without a separate fastening means. Therefore, since there is no fastening means in which the silicon member 400, which is a portion directly affected by the high frequency power source 230 in the upper electrode unit 200, is directly fastened with the upper electrode plate 210, abnormal discharge generated when power is applied. Can be prevented fundamentally. On the other hand, since the outer circumferential surface support member 430 is formed with a predetermined number of fastening means holes to fasten with the upper electrode plate 210, the outer circumferential surface support member 430 is provided by fastening means such as a screw through these fastening means holes. And the upper electrode plate 210 are fastened. When the head of the fastening means exposed when the outer circumferential surface supporting member 430 and the upper electrode plate 210 is exposed, the abnormal discharge generated therein affects the applied electric field and destabilizes the plasma, resulting in unsatisfactory results. Let's do it. In order to prevent the above phenomenon, the head of the fastening means must be concealed. 2, the shield ring 450 is formed in a "b" shape to cover the head of the fastening means exposed when the upper electrode plate 210 and the outer circumferential support member 430 are fastened by the fastening means. To make it possible. At this time, in order for the gas ejected through the silicon member 400 to be exhausted with a constant flow between the upper and lower electrodes 210 and 520, the lower surface of the silicon member 400 and the shield ring 450 may be removed. The lower surface is preferably formed at the same height. In the shield ring 450, the sum of the thickness of the portion parallel to the upper electrode plate 210 and the outer circumferential surface support member 430 is approximately equal to the thickness of the silicon member 400 so that the lower surface of the silicon member 400 may be formed. The lower surface of the shield ring 450 was kept parallel. At this time, when the silicon member 400, the outer circumferential surface support member 430, and the shield ring 450 are fastened, the gas ejection opening 280 and the gas ejection opening 280 of the silicon member 400 are formed. Should be assembled accordingly.

As in the previous embodiment, the present invention does not fasten the silicon member directly to the upper electrode plate by forming a fastening means groove directly on the outer peripheral surface of the silicon member, as in conventional equipment, a convex portion formed on the inner peripheral surface of the groove formed on the outer peripheral surface of the silicon member After fastening with the outer circumferential surface supporting member, the fastening of the outer circumferential surface supporting member to the electrode plate can effectively fix the silicon member to the electrode plate, and by effectively shielding the head of the fastening means by the shield ring, the lower surface of the shield ring and the silicon member Since the lower surface of the can be formed at the same height, as a result, the flow of the gas ejected through the silicon member can be kept constant, and the plasma can be stably generated.

7A and 7B illustrate another shape and fastening method of a silicon member as another embodiment of the present invention.

Referring to FIG. 7A, the upper electrode unit 200 includes an upper electrode plate 210, a gas blowing hole 280, and a silicon member 400 in contact with the upper electrode plate 210, and an upper electrode plate ( An upper insulating support member 440 supporting an outer circumferential surface of the 210 and an upper circumferential surface of the silicon member 400, and a part of an outer circumferential surface of the lower circumferential surface of the silicon member 400 and the upper insulating support member 440. And a shield ring 450 for fixing the upper electrode plate 210. FIG. 7B is an enlarged view of region C of FIG. 7A.

Unlike FIGS. 3A and 4A in which the convex portion is formed to fix the silicon member to the upper electrode plate by the outer circumferential support member, the silicon member 400 is fastened to the fastening means at the side of the upper insulation support member 440. Tighten directly. That is, the upper insulating support member 440 is formed with a plurality of fastening means holes formed penetrating in the left and right direction at a predetermined distance. A fastening means such as a screw penetrates through these fastening means holes and is fastened to the outer circumferential surface of the silicon member 400 to thereby fasten the silicon member 400 and the upper insulating support member 440.

The upper insulating support member 440 is fastened to the upper side of the outer circumferential surface of the silicon member 400, and the outer circumferential surface of the upper electrode plate 210 is seated on the inner side of the upper insulating support member 440. Also at this time, the lower surface of the lower and outer peripheral surface of the upper insulating support member 440 and the lower surface of the outer peripheral surface of the silicon member are in close contact with each other by using the shield ring 450 having a “b” shaped cross section. . At this time, the shield ring 450 is formed so that the fastening means hole 280 formed in the outer peripheral surface of the upper insulating support member 440 is covered by the inner peripheral surface of the shield ring 450. Accordingly, the head of the fastening means for fastening the shield ring 450 and the silicon member 400 through the fastening means hole 280 is covered by the shield ring 450 so as not to be exposed to the outside. As in the above-described embodiment, the lower surface of the silicon member 400 and the lower surface of the shield ring 450 are maintained at the same height. On the other hand, it should be noted that the shield ring 450 need not be limited to the cross section of the "b" shape. That is, the silicon member 400 is formed to be in close contact with the entire lower surface of the upper insulating support member 440, so that the inner circumferential surface of the shield ring 450 is formed of the upper insulating support member 440 and the silicon member 400. Steps may not be formed on the inner circumferential surface of the shield ring 450 to be in close contact with the outer circumferential surface. This may be applied to the case of FIG. 4A as well.

As described above, the present invention has proposed a new method of fastening a silicon member with an electrode plate using an outer circumferential support member. In addition, by effectively concealing the head of the fastening means generated during fastening with the shield ring, the fastening means which is directly affected by the electric field applied to the silicon member is essentially eliminated, and abnormal discharge occurring in the head of the exposed fastening means is eliminated. The pressure of the gas blown out of the silicon member can be kept constant.

Therefore, the present invention has the effect of stably generating the plasma in the space between the upper and lower electrodes.

In addition, the present invention has the effect of eliminating damage to the components inside the processing chamber, improve the process uniformity of the workpiece to reduce the failure rate of the plasma treatment process.

Claims (13)

In the upper electrode unit of the plasma processing apparatus, An upper electrode plate, A silicon member in contact with one surface of the upper electrode plate and having a gas hole through which gas passes; An outer circumferential surface supporting member fastened to an upper side of an outer circumferential surface of the silicon member and fastened to an outer circumferential portion of the upper electrode plate; The upper electrode unit, characterized in that the convex portion is formed on one of the inner circumferential surface of the outer peripheral surface support member and the outer circumferential surface of the silicon member in close contact with the inner circumferential surface, and the concave portion is formed on the other. The method of claim 1, wherein the outer circumferential surface support member has a fastening means hole formed to penetrate up and down or left and right, And fastening means for penetrating the fastening means hole to fix the upper electrode plate and the outer circumferential surface supporting member. (delete) The shield ring according to claim 2, further comprising: a shield ring having an inner circumferential surface in which an outer circumferential surface and a lower surface of the outer circumferential surface supporting member and a lower side of the outer circumferential surface of the silicon member are in close contact; An upper insulating support member supporting an outer circumferential surface of the upper electrode plate and seated on an upper surface of the shield ring The upper electrode unit comprising a. According to any one of claims 1, 2 and 4, the material of the outer peripheral surface support member is quartz, Teflon, Polytetrafluoroethylene (PTFE), Polychlorotrifluorofluoro (PTFE), Polychlorotrifluorofluoro (PCTFE), Perfluoroalkoxy (PFA), aluminum having a dielectric constant of 4 or less. Or an upper electrode unit, characterized in that the ceramic. The upper electrode unit according to any one of claims 1, 2, and 4, wherein the outer circumferential surface supporting member is composed of one or two separated in the vertical direction. The upper electrode unit according to any one of claims 1, 2 and 4, wherein the outer circumferential surface support member is two or more divided at predetermined angles. In the upper electrode unit of the plasma processing apparatus, An upper electrode plate, A silicon member in contact with one surface of the upper electrode plate and having a gas hole through which gas passes; An upper insulating support member supporting a portion of an outer circumferential surface of the silicon member and seated on an outer circumferential surface of the upper electrode plate; And the upper insulating support member is directly fastened from the side to the upper side of the outer circumferential surface of the silicon member. The method of claim 8, wherein the upper insulating support member is formed with a fastening means hole formed through the left and right, And fastening means for fixing the silicon member and the upper insulating member through the fastening means hole. The upper electrode unit according to claim 9, further comprising a shield ring having an outer circumferential surface of the upper insulating support member and an inner circumferential surface of the lower surface of the upper insulating support member and a lower side of the outer circumferential surface of the silicon member. The upper electrode unit according to claim 4 or 10, wherein the lower surface of the silicon member and the lower surface of the shield ring are formed at the same height. A plasma processing apparatus comprising the upper electrode unit according to any one of claims 1, 2, 4, and 8 to 10. The plasma processing apparatus of claim 12, wherein the object to be processed by the plasma processing apparatus is a semiconductor wafer or a glass substrate.

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