TW200848899A - Active matrix substrate, method for producing the same, and flat display - Google Patents

Active matrix substrate, method for producing the same, and flat display Download PDF

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Publication number
TW200848899A
TW200848899A TW97106039A TW97106039A TW200848899A TW 200848899 A TW200848899 A TW 200848899A TW 97106039 A TW97106039 A TW 97106039A TW 97106039 A TW97106039 A TW 97106039A TW 200848899 A TW200848899 A TW 200848899A
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Taiwan
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film
active matrix
matrix substrate
substrate
group
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TW97106039A
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Chinese (zh)
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Takeyoshi Katoh
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Zeon Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Disclosed is an active matrix substrate having excellent transistor characteristics and high reliability, which can be produced by a simple process. Also disclosed is a method for producing such an active matrix substrate. Specifically disclosed is an active matrix substrate comprising a base and a thin film transistor formed on the base and having an amorphous silicon film. In this active matrix substrate, a silicon oxide layer is arranged on the amorphous silicon film, and an organic protective film is arranged on the silicon oxide layer.; Also specifically disclosed is a method for producing such an active matrix substrate, which comprises (1) a step for forming a silicon oxide layer on an amorphous silicon film a by oxidizing the surface of an amorphous silicon film A of a thin film transistor formed on a base, and (2) a step for forming an organic protective film of a radiation-sensitive resin composition on the silicon oxide layer.

Description

200848899 > 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種主動矩陣基板與其製造方法以及平 面顯示裝置。更加詳細地說,本發明係關於一種能夠以簡 單之操作來進行製造並且具有良好之電晶體特性及高度之 可靠性的主動矩陣基板與其製造方法以及平面顯示裝置。 【先前技術】 Ρ 所謂主動矩陣基板係在基板上之相互直交地配置之複 數條之閘極訊號線和源極訊號線之交點,透過薄膜電晶體 (TFT )而配置晝素電極。此種基板係使用於主動矩陣型平 面顯示裝置。在主動矩陣型平面顯示裝置,各個顯示晝素 係藉由TFT (開關元件)而個別地進行控制,因此,比起 破動矩陣型平面顯示裝置,還更加不容易產生串音,適合 於高精細化及大容量化。 ( 圖7係習知之主動矩陣基板上之電路之某一例子之說 月圖在直父於基板上而進行配置之閘極訊號線12和源極 訊號線13之交點,配置作為開關元件之TFTU。配合於施 加在閘極電極15之電壓而改變由源極電極16開始流動至 汲極電極17之電流量,該變化係經由接觸孔而傳達至 電極1 8。 白知之主動矩陣基板係大多具有在形成TFT之陣列美 板之表面,藉著賤鐘法、蒸鐘法或CVD法而形成由石夕氮二 物寺之所構成之鈍化膜,藉由層間絕緣膜而使得表面呈平 2232-943 8-PF 5 200848899 設置連接於TFT之汲 坦化,在層間絕緣膜上,於接觸孔 極電極之晝素電極的構造。 例如在專利文獻1 之保護層(鈍化膜)和 (層間絕緣膜)的主動 揭示·具有由Si Nx或Si 〇2所構成 由本并環丁烯之所構成之平坦化層 矩陣基板。 此外,在專利文獻2,揭 ; 在旦素電極和配線之間, 形成由源極電極、源極配绫、 … ^ 加踝, 及極電極和直接地覆蓋後通 迺之石夕氧垸樹脂所構成之第彳古抵 ^ 乂i弟1有機層間絕緣膜以及由丙烯 糸樹脂所構成之第2有機層間絕緣膜,在m之通道部, 直接地接^下層之有機層n緣膜的主動矩陣基板。 【專利文獻1】日本特開平1 0 — 96963號公報 【專利文獻2】日本特開平u—3〇7778號公報 【發明内容】 【發明所欲解決的課題】 認為前述之主動矩陣基板係具有可以耐於實用之電晶 體特性和可靠性,但是,在這些之構造上,於專利文獻曰曰工 之主動矩陣基板,必須在真空中,進行鈍化膜之形成,另 一方面,在專利文獻2之主動矩陣基板,需要2次之有機 層間絕緣膜之形成製程,一般來說,製造過程之操作係變 得煩雜。 本發明之目的係提供一種能夠以簡單之操作來進行製 造並且具有良好之電晶體特性及高度之可靠性的主動矩陣 基板與其製造方法以及包括該主動矩陣基板所構成的平面[Technical Field] The present invention relates to an active matrix substrate, a method of manufacturing the same, and a flat display device. More specifically, the present invention relates to an active matrix substrate which can be manufactured in a simple operation and which has good transistor characteristics and high reliability, a method of manufacturing the same, and a flat display device. [Prior Art] The so-called active matrix substrate is provided with a pixel electrode through a thin film transistor (TFT) at the intersection of a plurality of gate signal lines and source signal lines which are arranged orthogonally on the substrate. Such a substrate is used in an active matrix type flat display device. In the active matrix type flat display device, each display element is individually controlled by a TFT (switching element), and therefore, crosstalk is less likely to occur than a broken matrix type flat display device, and is suitable for high definition. And large capacity. (FIG. 7 is a schematic diagram of a circuit diagram of a circuit on a conventional active matrix substrate. The intersection of the gate signal line 12 and the source signal line 13 arranged on the substrate is configured as a TFTU of the switching element. The amount of current flowing from the source electrode 16 to the drain electrode 17 is changed in accordance with the voltage applied to the gate electrode 15, and the change is transmitted to the electrode 18 via the contact hole. The active matrix substrate of the Baizhi has mostly On the surface of the TFT array forming the TFT, a passivation film composed of Shixia Nishui Temple is formed by a 贱 法 method, a steam clock method or a CVD method, and the surface is flat 2223 by the interlayer insulating film. 943 8-PF 5 200848899 A configuration in which a germanium electrode connected to a TFT is connected to a hole electrode on the interlayer insulating film, for example, a protective layer (passivation film) and an interlayer insulating film of Patent Document 1 are provided. Active disclosure of a flattened layer matrix substrate composed of the present cyclobutene composed of Si Nx or Si 〇 2. Further, in Patent Document 2, it is formed between the denier electrode and the wiring. Source electrode, source Pole 绫, ... ^ 踝, and the electrode and the 电极 彳 垸 1 1 弟 1 1 1 1 1 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机 有机2, an organic interlayer insulating film, and an active matrix substrate of an organic layer n-edge film which is directly connected to the underlying layer in the channel portion of m. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 10-96963 (Patent Document 2) [Problem to be Solved by the Invention] It is considered that the above-described active matrix substrate has practical transistor characteristics and reliability, but in these structures, in the patent literature The active matrix substrate is completed, and the passivation film must be formed in a vacuum. On the other hand, in the active matrix substrate of Patent Document 2, the formation process of the organic interlayer insulating film is required twice, and generally, the manufacturing process The operation becomes cumbersome. It is an object of the present invention to provide an active matrix base that can be manufactured with a simple operation and has good transistor characteristics and high reliability. And a manufacturing method thereof including the plane of the active matrix substrate composed of

2232-9438-PF 6 200848899 顯示裝置。 【用以解決課題的手與】 本發明人係為了達成前述之目的,因此,全心重覆地 進行研究,結果,發現在氧化形成於基材上之m之非結 晶質矽膜之表面後而在其上面形成有機保護膜所構成的主 動矩陣基板係漏電流小,並且,相對於閘極電極之電壓增 加而呈直線地啟動源極電極,汲極電極間之電《,而且, 即使是在高溫多濕之環境下,放置長時間,也使得這些之 電晶體特性或流動電流之所需要之臨限值電壓幾乎不發生 變化,根據該意見,以致於完成本發明。 也就是說,本發明係提供: [1 ]· 一種主動矩陣基板,係包括基材以及形成於該基 材上且具有非結晶質矽膜之薄膜電晶體所構成之主動矩陣 基板,非結晶質矽膜係在膜表面,具有矽氧化層,並且, 在非結晶質矽膜上,層積有機保護膜; [2]:如前述Π]所述之主動矩陣基板,矽氧化層之厚 度係5nm以下; [3 ] ·如丽述[1 ]或[2 ]所述之主動矩陣基板,非結晶質 矽膜係還進行曱矽烷基化; [4 ]·如前述[1 ]至[3 ]中任一項所述之主動矩陣基板, 有機保護膜係由具有極性基之環狀烯烴系聚合物之交聯物 所構成之膜; [5 ] 種主動矩陣基板之製造方法,係如前述[1 ]所 述之主動矩陣基板之製造方法,具有:2232-9438-PF 6 200848899 Display device. [Hands and Problems for Solving the Problems] The inventors of the present invention have conducted research on the above-mentioned purpose, and as a result, found that after oxidizing the surface of the amorphous non-crystalline ruthenium film formed on the substrate On the other hand, the active matrix substrate formed with the organic protective film thereon has a small leakage current, and the source electrode is linearly activated with respect to the voltage of the gate electrode, and the electricity between the drain electrodes is "and, even if In the high-temperature and high-humidity environment, the long-term placement also makes the threshold voltage required for these transistor characteristics or flowing current hardly change, and according to this opinion, the present invention has been completed. That is, the present invention provides: [1] An active matrix substrate comprising a substrate and an active matrix substrate formed of a thin film transistor having an amorphous ruthenium film formed on the substrate, amorphous The ruthenium film is on the surface of the film, has a ruthenium oxide layer, and on the amorphous ruthenium film, an organic protective film is laminated; [2]: The active matrix substrate as described in the above 矽], the thickness of the tantalum oxide layer is 5 nm [3] The active matrix substrate described in Li [1] or [2], the amorphous ruthenium film system is also subjected to oximation; [4]· as described in [1] to [3] above In any one of the active matrix substrates, the organic protective film is a film composed of a crosslinked product of a cyclic olefin polymer having a polar group; [5] a method for producing an active matrix substrate is as described above [1] The manufacturing method of the active matrix substrate described above has:

2232-9438-PF 7 200848899 (1)氧化形成於基材上之薄膜電晶體之非結晶質矽膜 A之表面而得到在表面具有石夕氧化層之非結晶質石夕膜b之 製程;以及 (2 )在非結晶質矽膜B之表面上,藉由感應放射線性 樹脂組成物而形成有機保護膜之製程; [6]:如前述[5]所述之主動矩陣基板之製造方法,藉 著由和臭氧水之接觸、在氧化性氣體氣氛之紫外線照射、 在氧化性氣體氣氛之加熱以及曝露至包含氧化性氣體之電 漿中之曝露所構成之群組選出之至少一種方法,而進行製 程(1 )之非結晶質矽膜A表面之氧化; [7 ] ·如前述[5 ]或[6 ]所述之主動矩陣基板之製造方 法,藉由濕式法而進行製程(2 ); 制[8]如前述[5]至[7]中任一項所述之主動矩陣基板之 製造方法,感應放射線性樹脂組成物係包含具有極性基之 %狀烯系聚合物、交聯劑、感應放射線化合物及溶劑所 構成;以及 [9]一種平面顯示裝置,包括如前述[1]至[4]中任一項 所述之主動矩陣基板所構成。 、 【發明效果】 本發明之主動矩陣基板係漏電流小,並且,相對於間 極電極之電壓增加而呈直線地啟動源極電極/汲極電極; 之電流,而且,即使是在高溫多濕之環境下,放置長時間, 也使仔故些之電晶體特性或臨限值電壓幾乎不發生變化。 如果藉由該基板的言舌,則得到長壽命、低消耗電力且高對2232-9438-PF 7 200848899 (1) oxidizing the surface of the amorphous ruthenium film A formed on the thin film transistor on the substrate to obtain a process of forming the amorphous crystallization film b on the surface; and (2) a process for forming an organic protective film by inducing a radiation-based resin composition on the surface of the amorphous ruthenium film B; [6]: A method for manufacturing an active matrix substrate according to the above [5], Performing at least one selected from the group consisting of contact with ozone water, ultraviolet irradiation in an oxidizing gas atmosphere, heating in an oxidizing gas atmosphere, and exposure to a plasma containing an oxidizing gas. The method of manufacturing the active matrix substrate according to the above [5] or [6], wherein the process (2) is carried out by a wet method; [8] The method for producing an active matrix substrate according to any one of [5] to [7] wherein the inductively radiating resin composition comprises a olefinic polymer having a polar group, a crosslinking agent, Inductive radiation compound and solvent; and [9] a flat The surface display device comprises the active matrix substrate according to any one of the above [1] to [4]. [Effect of the Invention] The active matrix substrate of the present invention has a small leakage current, and linearly activates the source electrode/drain electrode with respect to the voltage of the interpole electrode; and, even at a high temperature and humidity In the environment, it is also left for a long time, so that the transistor characteristics or the threshold voltage of the latter are hardly changed. If the tongue of the substrate is used, a long life, low power consumption, and a high pair are obtained.

2232-943 8-PF 8 200848899 平面顯示襄置。 之主動矩陣基板之製造 有效率地製造具有高度 方法的 可靠性 比反襯呈良好的主動矩陣型 此外,如果藉由本發明 話,則能夠以簡單之操作, 的主動矩陣基板。 【貫施方式】 本表月之主動矩陣基板係形成於基材上之Μ之非结 晶質石夕膜,在膜表面,具有石夕氧化層,並且,在非結晶質D 矽膜上’層積有機保護膜。 圖1係本發明之主動矩陣基板之某一形態之ι晝素單 位之不意俯視圖(上圖)以及包含TFT部之部分剖面圖(下 圖)在本形恶’在基材i之表面,呈直交地配置閘極訊 號線2和源極訊號線3,在其交點,配置_。_係且 有閑極電極5、源極電極6及汲極電極7。氧化形成於基材 士上之TFT4之非結晶質矽膜α之表面而形成矽氧化層,同 日『形成氧化膜8。在氧化膜8(包含非結晶質石夕 氧:層)之上’設置由有機高分子所構成之有機保護 艇9,透過有機保護膜9之接觸孔1〇而連接没極電極7和 晝素電極η。此外,在本形態’ TFT係每丨個晝素單 成為1個,但是,能夠因為需要而形成2個以上。 本發明之主動矩陣基板之各個構成要素、也就是展 材、閘極訊號線、源極訊號線、T F τ、晝素電極等係例:2232-943 8-PF 8 200848899 Flat display unit. The manufacture of the active matrix substrate efficiently manufactures a highly active method with a high degree of reliability. The active matrix substrate can be easily operated by the present invention. [Appropriate application method] The active matrix substrate of this month is a non-crystalline stone film formed on the substrate, having a stone oxide layer on the surface of the film, and a layer on the amorphous D film. Organic protective film. 1 is a top view of a monolithic unit of the active matrix substrate of the present invention (top view) and a partial cross-sectional view (bottom view) including a TFT portion on the surface of the substrate i; The gate signal line 2 and the source signal line 3 are arranged orthogonally, and at their intersection, _ is configured. The _ system has a free electrode 5, a source electrode 6, and a drain electrode 7. Oxide is formed on the surface of the amorphous ruthenium film α of the TFT 4 on the substrate to form a tantalum oxide layer, and the oxide film 8 is formed on the same day. An organic protection boat 9 made of an organic polymer is disposed on the oxide film 8 (including the amorphous carbon layer: layer), and the electrode electrode 7 and the halogen element are connected through the contact hole 1 of the organic protective film 9. Electrode η. In addition, in the present embodiment, the number of the individual TFTs is one, but two or more can be formed as needed. The components of the active matrix substrate of the present invention, that is, the exhibit material, the gate signal line, the source signal line, the T F τ, the halogen electrode, etc. are as follows:

同於前料利文獻!或2所述之習知之主動矩陣基板,可 以使用這些公開文獻所述之材料而形成。 2232-943 8-PF 9 200848899 主動矩陣基板,TFT之非結晶質石夕膜#在 其表面,具有石夕氧化層,但是,在氧化m之非社 :之表面時’推測該表面成為疏水性,防止水分侵入至非 結晶質石夕膜之表面和有機保護膜之間之侵入。結果,广到 =良好之耐濕熱性之主動矩陣基板。梦氧化層之厚^ ::特別限定,但是,由發現良好之電晶體特性之觀點來 看的話,則最好是5職以下、更加理想是以下。梦氧 =層之厚度:限係通常lnm。在lM以下’不容易得到充 刀之水分之侵入防止效果。 在本說明書,所謂TFT之非钍 F、、口曰曰貝梦膜之表面係指 之通道部之非結晶質矽膜之表面。 此外m之非結晶質;^膜係由使得防止水分侵入至 非結晶質矽膜之表面和有機保護膜之間之侵入防止來變得 更加充分之觀點來看的話,則最好是還進行甲錢基化。 在TFT之非結晶質⑪膜之表面進行甲㈣基化之狀態下, 推測更加地提高非結晶質矽膜之表面之疏水性,可^更加 良好地發現本發明之要求之效果。 並無特別限定在利用於非結晶質矽膜表面之甲矽烷基 化之甲矽烷基,作為其具體例係可以列舉 烧基、三曱基甲鶴、三乙基曱繼、三== 烷基、卜丁基二甲基甲矽烷基、卜丁基二苯基甲矽烷基、 二苯基曱矽烷基等。在這些當中,可以適當地利用三甲基 甲石夕烧基(也就是最好為三甲基曱矽烷基化)。 在本說明書,所謂甲矽烷基化係指藉由甲矽烷基而取Same as the former materials! The conventional active matrix substrate described in or 2 can be formed using the materials described in these publications. 2232-943 8-PF 9 200848899 The active matrix substrate, the amorphous crystal of the TFT, has a smectite layer on its surface, but it is assumed to be hydrophobic when oxidizing the surface of m. Prevents intrusion of moisture into the intrusion between the surface of the amorphous stone membrane and the organic protective film. As a result, it is widely available = a good thermal and thermal resistant active matrix substrate. The thickness of the dream oxide layer is particularly limited. However, from the viewpoint of finding a good crystal characteristic, it is preferably 5 or less, more preferably the following. Dream oxygen = thickness of the layer: the limit is usually lnm. Below 1M, it is not easy to obtain the effect of preventing the intrusion of the moisture of the filling knife. In the present specification, the surface of the TFT is not the surface of the amorphous film of the channel portion of the channel. In addition, the non-crystalline substance of m; the film is made more effective in preventing the intrusion of moisture from invading the surface of the amorphous film and the organic protective film, and it is preferable to carry out Money-based. In the state where the surface of the amorphous 11 film of the TFT is methylated, it is presumed that the hydrophobicity of the surface of the amorphous ruthenium film is further improved, and the effect required by the present invention can be more satisfactorily found. The mercaptoalkyl group which is used for the alkylation of the surface of the amorphous ruthenium film is not particularly limited, and specific examples thereof include an alkyl group, a trimethyl sulfonium group, a triethyl sulfonium group, and a tri-= alkyl group. , butyl dimethyl methacrylate, butyl butyl diphenyl methacrylate, diphenyl decyl alkyl and the like. Among these, trimethylmethacrylate (i.e., preferably trimethylhydrazine alkylation) can be suitably used. In the present specification, the term "methylation of formazan" refers to the use of a methoxyalkyl group.

2232-9438-PF 10 200848899 $存在於非結晶質矽膜等之曱矽烷基化對象物之表面之質 基材==?陣基板’有機保護膜係通常形成於 非結晶質二==面具㈣氧化層… 保護膜)ΓΓ 接地接合石夕氧化層和有機 、、)。/、要不妨礙本發明所要求之效果之發現, H非結晶質⑪膜之表面和有機保護膜之間,層 之材料所構成之膜。 、田任心 如取2發明’作為形成有機保護膜之材料係可以列舉例 物丙婦、聚丁稀等之聚烯烴;環狀稀煙争聚人 在W中,…心树月曰,聚嫩樹脂;聚驗等。 之㈣:二糸聚合物係吸濕性極為小,介電率 料依附性小,因此’可以適當地使用。 具有矽氧化層之TFT之非纴曰所 在表面 鍤非、、、口 M貝矽膜上呈直接地層積由此 種%狀烯烴系聚合物所構 槓由此 陣基板係可以發揮更力: = = :保護膜而得到之主動矩 H ^之電晶體特性及更加高之可靠 1*生。在本發明,有機保護戶 罪 最好是。… 隻膜之厗度係通常0·1〜ioo“m、 疋。·5〜5〇”、更加理想是0.5〜30"m。 :斤謂環狀稀烴系聚合物係具有 位:糸“物係可以具有環狀烯烴單體以外之單體單 體:::種環狀稀烴系聚合物之全構造單位 早體早位之比例係通常30 重旦0/ . 30〜1〇〇重量%、最好是50〜10() 重里%、更加理想是70〜100重量%。 ίϋ02232-9438-PF 10 200848899 $The base material of the surface of the ruthenium alkylation object such as the amorphous ruthenium film ==? Array substrate' The organic protective film system is usually formed in the amorphous 2 == mask (4) Oxide layer... Protective film) 接地 Ground-bonded shixi oxide layer and organic, ,). /, without obstructing the discovery of the effects required by the present invention, a film composed of a material of the layer between the surface of the H-crystalline 11 film and the organic protective film. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, ; (4): The diterpene polymer has extremely low hygroscopicity, and the dielectric material has a small dependency, so that it can be suitably used. The non-纴曰 surface of the TFT having the ruthenium oxide layer is directly laminated on the surface of the M 矽 矽 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 此种 此种 此种 此种 此种 此种 此种 此种 此种= : The film characteristics of the active moment H ^ obtained by the protective film and the higher reliability are 1*. In the present invention, it is preferable for the organic protection household to sin. ... The film thickness is usually 0·1~ioo “m, 疋··5~5〇”, more preferably 0.5~30"m. The squid is a cyclical hydrocarbon-based polymer having a position: 糸 "The system may have a monomer monomer other than a cyclic olefin monomer::: a full-structure unit of a cyclic-dense hydrocarbon-based polymer The ratio is usually 30% denier 0/. 30~1% by weight, preferably 50 to 10%, more preferably 70 to 100% by weight.

2232-9438-PF 11 200848899 曰使用於丰發明之裱狀烯烴單體係並無特別限定,但 是,作為其具體例係列舉例如後面敘述之環狀烯烴單體(a) :(C)、乙烯基脂環式烴單體⑷以及乙蝉基芳香族烴 2 (e) °另—方面,此種環狀烯烴單體以外之單體係並 :、別限定,但是,作為其具體例係列舉例如後面敘述之 鏈狀烯烴(f)。 本發明之環狀稀煙系耳5ζ 聚合這此之各種簞^ 可以藉由任意地組合及 狀彡成°此外’在得狀聚合物之環 而忐也私 也可以藉由對於這個進行氫化 而成為飽和之環狀構造。 适灯風化 作為環狀烯烴單體之第丨 之環狀烯烴單體(a) il體:列舉不具有極性基 2,1] 庚基一2—烯烴、5〜 —乙基一二裱[2. 2. 1] 5—乙叉〜_if [2 土一—%[2. 2. 1]庚基一2 —稀烴、 一 ¥ L 2 · 2 · 1 ]痊其〜〇 [2· 2. 1]庚Α —2 κ 土 烯烴、5—曱叉一二環 」厌基一2〜烯烴、5_ _ 基一2 —烯烴、二里「 土 一環[2· 2· 1]庚 -¼ [4. 3. 〇· p’s Ί 丄 〇 稱:二環戊二稀)、四環]十-:,7-二烯烴(俗 3, 5, 7, 12, 11 —五嫌 · 〇· 1 ,14· 〇3,7]十五一2232-9438-PF 11 200848899 曰 The monoolefin system used in the invention is not particularly limited, but as a specific example thereof, a cyclic olefin monomer (a), which will be described later, (C), ethylene The alicyclic hydrocarbon monomer (4) and the ethyl fluorenyl aromatic hydrocarbon 2 (e) °, in addition to the single system other than the cyclic olefin monomer, are not limited, but as a specific example thereof For example, the chain olefin (f) described later. The ring-shaped flue-cured ear 5ζ of the present invention can be polymerized by any combination and in the form of a mixture. In addition, it can also be hydrogenated by hydrogenation for the ring of the polymer. Become a saturated ring structure. The lamp is weathered as the cyclic olefin monomer of the cyclic olefin monomer (a) il body: listed as having no polar group 2,1] heptyl 2-alkenyl, 5~-ethyl-di-anthracene [2] 2. 1] 5—ethylidene~_if [2 soil one-%[2. 2. 1] heptyl- 2 - dilute hydrocarbon, one ¥ L 2 · 2 · 1 ] 痊 〇 〇 [2· 2. 1] Geng Α — 2 κ Earth olefin, 5- 曱 一 二 」 」 厌 一 一 一 2 olefin, 5 _ _ -2- olefin, Erli " soil a ring [2 · 2 · 1] G - 1⁄4 [4 3. 〇·p's Ί nickname: dicyclopentadiene), tetracycline] ten-:, 7-diene (Vulgar 3, 5, 7, 12, 11 - five suspects · 〇 · 1 , 14 · 〇3,7]15

乂 五烯烴、四環[4· 4 〇 12,5 ,7,10^ Q 細烴(俗稱:四環十二 ..1 · 1 ]十-3- 广。]十二稀烴、8— ^甲基—四環[4·4·0·12'5. 十二—31烴、 乙基:四環[4.4. -3-稀煙、8—乙又甲又一四%[4·…2,5.「,十二 乙又—四環[4. 4· 〇 12,5 ι7)1〇ί, q -烯烴、8-乙烯基 · 1 . 1 ]十二_3 %L4· 4_ 〇. I2,5· I7,1。]十二—3 —乂pentaene, tetracyclo[4·4 〇12,5,7,10^Q fine hydrocarbons (commonly known as: four rings twelve..1 · 1 ] ten-3- wide.] twelve dilute hydrocarbons, 8-^ Methyl-tetracyclo[4·4·0·12'5. Twelve-31 hydrocarbons, ethyl: tetracyclic [4.4. -3-thin smoke, 8-B and another four% [4·...2 , 5.", Twelve E and four rings [4. 4 · 〇 12, 5 ι7) 1〇ί, q-olefin, 8-vinyl · 1. 1 ] Twelve _3 % L4 · 4_ 〇. I2,5· I7,1.]12—3 —

2232-943 8-PF 12 200848899 烯烴、8~丙烯基一四環[4· 4 ί) 口 5 • υ· 1 · 17,1〇]十二—3-烯 烴、五環[6· 5· 1. I3,6· Ο2,7· 〇9,13ί 丄 班# 五〜3,1 0 — 一細炫、 %戊烯、環戊二烯、1,4 一甲烷〜1 / I 。 ,4, 4a,5, 10, 10a—六羥 基恩、8-苯基一四環[4.4.0 ]2,5 l7ln 抑「 · .1]十二—3 -烯烴、 四環[9· 2. 1· 02,1G. 03’8]十四ς ,b,7, 12 —四烯烴(也稱 為 1,4 -甲烧一 1,4,4&,9&〜四鉍| 四羥基〜9H一苗 )、五 環[7. 4· 〇· I3,6· I1。,13· 〇2,^ + 「n 五〜4, 11—二烯烴、五環 [9· 2. 1· p’7· 〇2,' 〇u]十五 ^ ’上」S'二稀煙等。 這些環狀烯煙單體係可以分別 2種以上而使用。 】早獨使用’也可以組合 作為環狀烯烴單體之第2群在^ σ 群係可以列舉具有極性基之 %狀烯烴皁體。具有極性基之 烯烴單體係可以分別單 獨使用,也可以組合2種以上而使用。 極性基係可以分成為質子性極 基和廷個以外之極性 土而進灯表示。因此’具有極 八士 *曰 14基之裱狀烯烴單體係可以 刀成為八有質子性極性基之環狀烯烴單體(b)和具 性極性基以外之極性基(非質 、 體⑴而進行表示。 極性基)之環狀稀烴單 在本說明書,所謂質子性極性基係指在碳原子 原子呈直接地結合氫原子之屌早園 ^ ,, 山 乌原于之原子團。在此,碳原子以2232-943 8-PF 12 200848899 Olefin, 8-propenyl-tetra-cyclo[4·4 ί] 5 • υ· 1 · 17,1〇] 12-3-olefin, pentacyclic [6· 5· 1 I3,6· Ο2,7· 〇9,13ί 丄班# Five~3,1 0 — A fine, % pentene, cyclopentadiene, 1,4 methane ~1 / I. , 4, 4a, 5, 10, 10a-hexahydroxy-en, 8-phenyl-tetra-cyclo[4.4.0]2,5 l7ln inhibit "· .1] 12--3-olefin, tetracyclic [9· 2 .1· 02,1G. 03'8] Fourteen ς, b, 7, 12 —Tetraolefins (also known as 1,4 - A, 1, 4, 4 &, 9 & ~ 铋 | tetrahydroxy~ 9H a seedling), five rings [7. 4· 〇 · I3,6· I1.,13· 〇2,^ + "n five to 4, 11-diolefin, five rings [9· 2. 1· p' 7· 〇 2, ' 〇 u] fifteen ^ 'on' S' two smoke and so on. These cyclic olefin smoke single system can be used in two or more types. The second group of the cyclic olefin monomers may be combined as the second group of the cyclic olefin monomers. The σ group may be a olefin soap having a polar group. The olefin single system having a polar group may be used singly or in combination of two or more. The polar system can be divided into a protonic polar group and a polar earth other than the Ting. Therefore, a single system of a olefinic olefin having a polar octa* 曰 14 group can be a cyclized monomer having a protonic polar group (b) and a polar group other than a polar group (non-quality, body (1) In the present specification, the term "protonic polar group" refers to an atomic group in which a carbon atom directly binds to a hydrogen atom. Here, the carbon atom is

子係最好是屬於週期表第15族及第16族之原 =是屬於週期表第15族及第i6族之第】和第2週= 二子子甚至最好是氧原子、氣原子和硫原子、特別最好= 2232-9438-PF 13 200848899 作為質子性極性基之具體例係列舉羧基(羥基羰基)、 石黃酸基、構酸基、髮基專之具有氧原子之極性基;伯胺基、 仲胺基、伯醯胺基、仲醯胺基(醯亞胺基)等之具有氮原 子之極性基,硫代基專之具有硫原子之極性基等。即使是 在這些當中,也最好是具有氧原子,更加理想是魏基。 作為具有質子性極性基之環狀烯烴單體(b)之具體例 係列舉5—羥基羰基二環[2· 2· 1]庚基一 2 一稀烴、5—甲 基一 5—每基羰基一環[2· 2· 1]庚基一 2 —烯烴、5 —幾基 ( 曱基一 5一羥基羰基二環[2· 2· 1 ]庚基一 2 —稀烴、5—外 一 6 —内一二羥基羰基二環[2· 2· 1]庚基一 2一烯烴、8 一 經基幾基四環[4· 4· 0· I2,5· in。]十二一 3一烯烴、8—甲 基一 8—羥基羰基四環[4· 4. 0· I2,5· ι7,ι°]十二—3 一婦 fe、8—外一9 一 内一二經基幾基四環[4· 4. 〇· I2,5 I7,10] 十二一 3 一烯烴等之具有羧基之環狀烯烴;5 —(4 一羥苯基) 二環[2· 2. 1]庚基一 2—浠烴、5—曱基一5 —(4 一經苯基) 二環[2· 2· 1 ]庚基一 2—烯烴、8— ( 4—羥苯基)四環[4· 4· 0· I2’5·厂’10]十二一 3_ 烯烴、8一曱基 _ 8一( 4一羥苯 基)四環[4. 4· 0· 1’· l’1。]十二一 3 —烯烴等之具有經 基之環狀烯烴等,即使是在這些當十,也最好是具有羧基 之環狀烯烴。 作為非質子性極性基之具體例係列舉酯基(總稱為烧 氧基.基及务氧基魏基。)、N—取代酿亞胺基、環氧基、 鹵素原子、氰基、魏基經基魏基(二魏酸之酸酐殘基)、 少元氧基、%基、叔胺基、績酸基、鹵素原子、丙稀驢基等。The subfamily is preferably the original of Groups 15 and 16 of the periodic table = the first and second weeks of the periodic table] and the second week = the second child is even preferably an oxygen atom, a gas atom and sulfur. Atom, especially best = 2232-9438-PF 13 200848899 As a specific example of a protic polar group, a carboxyl group (hydroxycarbonyl group), a rhein group, a carboxylic acid group, a polar group having a polar group of an oxygen atom; A polar group having a nitrogen atom such as an amine group, a secondary amino group, a primary amidino group or a secondary sulfhydryl group, and a thio group having a polar group having a sulfur atom or the like. Even among these, it is preferable to have an oxygen atom, and it is more desirable to be Wei. Specific examples of the cyclic olefin monomer (b) having a protic polar group are 5-hydroxycarbonylbicyclo[2·2·1]heptyl-2-dihydrocarbon, 5-methyl-5-peryl Carbonyl one ring [2·2·1]heptyl-2-alkenyl, 5-amino group (fluorenyl-5-hydroxycarbonylbicyclo[2·2·1]heptyl-2-dihydrocarbon, 5-external 6 - an internal dihydroxycarbonylbicyclo[2·2·1]heptyl-2-alkenyl, 8-ylaminotetracyclo[4·4·0·I2,5·in.] dodeca-3-olefin, 8-methyl-8-hydroxycarbonyltetracyclo[4·4·0· I2,5· ι7,ι°]12—3 a woman fe,8—external one 9 one inner two one base [4· 4. 〇· I2,5 I7,10] a cyclic olefin having a carboxyl group such as a 12-1,4-olefin; a 5-(4-hydroxyphenyl)bicyclo[2·2.1]heptyl group 2-Hydrazine, 5-mercapto-5-(4-monophenyl)bicyclo[2·2·1]heptyl-2-alkene, 8-(4-hydroxyphenyl)tetracyclo[4·4· 0· I2'5·厂'10]12- 3_ olefin, 8-indolyl _ 8-(4-hydroxyphenyl)tetracyclo[4. 4· 0· 1'· l'1.] Twelve 3 - olefins, etc. The olefin or the like is preferably a cyclic olefin having a carboxyl group even in these ten. As a specific example of the aprotic polar group, an ester group (collectively referred to as an alkoxy group and an oxetyl group). ), N—substituted aryl imino group, epoxy group, halogen atom, cyano group, weiki carbyl group (an acid anhydride residue of diweiric acid), a minority oxy group, a hydroxy group, a tertiary group, a tertiary acid group Base, halogen atom, acrylonitrile group, and the like.

2232-943 8-PF 14 200848899 在違些當中,最好是酯基、N__取代醯亞胺基、氰基及鹵素 原子,更加理想是酯基及N—取代醯亞胺基。特別最好是n 一取代醯亞胺基。 作為具有非質子性極性基之環狀烯烴單體(c)係具體 地例舉以下。 ' 作為具有酯基之環狀烯烴係列舉例如5 ~乙酸基二環 [2· 2. 1]庚基一 2—烯烴、5—甲氧基羰基二環[2· 2. u 庚基一 2 —烯烴、5 —甲基一 5—甲氧基羰基二環[2· 2. 1] 庚基一 2—炸煙、8 —乙酸基四環[4. 4. 0· I2,5 I7,1。]十一 一 3—烯烴、8—甲氧基羰基四環[4· 4· 〇· ”’5. l7,1G]十二 —3—烯烴、8—乙氧基羰基四環[4· 4. 〇· 12,5· l7,1Q]十二 —3—烯烴、8—n—丙氧基羰基四環[4· 4· 〇. l2,5. Γ,10] 十二一 3—烯烴、8—異丙氧基羰基四環[4· 4· 〇· l2,5. l7,10] 十二一 3—烯烴、8—η—丁氧基羰基四環[4· 4. 〇. ι2,5. ι7,1〇 十二一 3 —烯烴、8—曱基一8—曱氧基羰基四環[4. 4. 〇. l2’5· l7’1G]十二—3—烯烴、δ—甲基一δ —乙氧基羰基四環 [4· 4· 〇· 12’5· 17,1°]十二—3—烯烴、8 — 甲基一 8—η 〜丙 氧基羰基四環[4· 4. 〇· I2,5· Γ,1ϋ]十二一 3—烯烴、8〜甲 基 8 異丙氧基 >厌基四環[4 4 0 22*5 I7,1。]十-〇 一烯烴、8—甲基一 8—n—丁氧基羰基四環[4· 4· 〇· i2,5. 17’1D]十二一3—烯烴、8— (2,2,2一三氟乙氧基羰基)四 環[4. 4. 0· I’5· Γ’10]十二—3 一 烯烴、曱基— (2,2,2—二氟乙氧基幾基)四環[4. 4. 〇· I2,5· I7,1。]十 二一 3 —烯烴等。2232-943 8-PF 14 200848899 In some cases, it is preferred that the ester group, the N__ substituted quinone imine group, the cyano group and the halogen atom are more preferably an ester group and an N-substituted quinone imine group. Particularly preferred is an n-substituted quinone imine group. The cyclic olefin monomer (c) having an aprotic polar group is specifically exemplified below. 'As a series of cyclic olefins having an ester group, for example, 5 -aceticylbicyclo[2·2.1]heptyl-2-alkene, 5-methoxycarbonylbicyclo[2· 2.u heptyl-2 - olefin, 5-methyl-5-methoxycarbonylbicyclo[2·2.1]heptyl-2-furan, 8-acetate tetracyclo[4. 4. 0· I2,5 I7,1 . 11:3-olefin, 8-methoxycarbonyltetracyclo[4·4·〇· ”'5. l7,1G] 12--3-olefin, 8-ethoxycarbonyltetracyclo[4·4 〇· 12,5· l7,1Q] 12-3 olefin, 8-n-propoxycarbonyltetracyclo[4·4· 〇. l2,5. Γ,10] -12-olefin, 8-isopropoxycarbonyltetracyclo[4·4·〇·l2,5.l7,10] 12-1,3-alkenyl, 8-n-butoxycarbonyltetracyclo[4· 4. 〇. ι2, 5. ι7,1〇121-3 olefin, 8-mercapto-8-decyloxycarbonyltetracyclo [4. 4. 〇. l2'5·l7'1G] 12-3-olefin, δ- Methyl-δ-ethoxycarbonyltetracyclo[4·4·〇·12'5· 17,1°] 12-3-olefin, 8-methyl-8-η-propoxycarbonyltetracyclo [ 4· 4. 〇· I2,5· Γ,1ϋ]12-3-olefin, 8-methyl-8 isopropyloxy> anoyltetracycline [4 4 0 22*5 I7,1.] 十- Mono-olefin, 8-methyl-8-n-butoxycarbonyltetracyclo[4·4·〇·i2,5. 17'1D]12-3-olefin, 8-(2,2,2 Trifluoroethoxycarbonyl)tetracyclo[4.4.0·I'5·Γ'10]12-3 Alkene, Mercapto- ( 2,2,2-difluoroethoxymethyl)tetracyclo[4. 4. 〇· I2,5·I7,1.] XX2-3-olefin.

2232-9438-PF 15 200848899 作為具有N—取代醯亞胺基之環狀烯烴係列舉例如n (4苯基)(5 —原菠烧一 2, 3—二羧基醯亞胺)等。 作為具有氰基之環狀烯烴係列舉例如8一氰基四環[4· 4. 〇. 1 · l7’1G]十二一3~烯烴、8一甲基—8—氰基四環[4 4 Π 1 2, 5 1 7, 1 0 Ί 丄一 η • ·]十—一 3—烯烴、5—氰基二環[2. 2. η庚基 —2 —烯烴等。 作為具有鹵素原子之環狀烯烴係列舉例如8-氯四環 [4. 4· 〇· I2'卜1十二—3—烯烴、8—甲基—8—氯四 (環[4· 4. 〇. 12,5. I7’,十二-3一烯烴等。 此外,作為乙縣脂環式烴單體⑷之例子係可以列 舉乙烯基環丙院、乙烯基環丁燒、乙烯基環戊院、乙婦基 環己烷、乙稀基環庚烧等之乙烯基環鏈烧;3—甲基一卜 乙烯基環己烧、4-甲基—卜乙稀基環己燒、}一^某一2 —乙烯基環丙烷、1,1一-芏奚 〇 ^ 5 —本基一2—乙烯基環丙烷等之且 有取代基之乙烯基環鏈烷等。 I ^=卜,料乙縣料族烴單體(e)之例子係可以列 舉本乙細、卜乙稀基蔡、2—乙稀基蔡小乙婦基萃等之 乙烯基芳香族類;3—甲基苯乙烯、4〜 P其1 土本乙稀、4 —環 己基本乙烯、4—十二烷基苯乙烯、2〜 一 嬌、4 r ^ -tt -T # Λ - 基〜4一卞基苯乙 飾4一(本基丁基)苯乙烯等之呈古雨△甘 力… 邱手之具有取代基之乙烯基芳香 無類十二乙稀基苯、ρ 一二乙婦基苯、雙(卜乙稀 基)甲烷等之多功能乙烯基芳香族類等。 土 作為鏈狀烯烴(f )之例子係 , L 卞係列舉乙烯;丙烯、1 ~ 丁 烯、1 —戊浠、1 一己烯、3 —甲 T基—1— 丁烯、3一甲基2232-9438-PF 15 200848899 As a series of cyclic olefins having an N-substituted quinone imine group, for example, n (4 phenyl) (5-original calcined 2,3-dicarboxy quinone imine) or the like can be mentioned. As a series of cyclic olefins having a cyano group, for example, 8-cyanotetracyclo[4·4.〇.1·l7'1G]12-1,3-alkenyl, 8-methyl-8-cyanotetracyclo[4] 4 Π 1 2, 5 1 7, 1 0 Ί 丄 η • ·] 1,4- 3-olefin, 5-cyanobicyclo[2. 2. ηheptyl-2-alkenyl, etc. As a series of cyclic olefins having a halogen atom, for example, 8-chlorotetracyclo[4. 4 · 〇 · I 2 ' Bu 1 12 - 3 - olefin, 8-methyl - 8 - chlorotetrazide (cyclo [4 · 4. ,. 12,5. I7', 12-3 olefin, etc. Further, as an example of the alicyclic hydrocarbon monomer (4) of the B County, vinylcyclopropylene, vinylcyclobutane, vinylcyclopentan can be cited. Vinyl ring-burning of hospitals, women's cyclohexyl hexane, ethylene-cycloheptane, etc.; 3-methyl-b-vinylcyclohexane, 4-methyl-ethethylcyclohexene, one ^2-vinylcyclopropane, 1,1 - 芏奚〇^ 5 - a vinyl-cycloalkane having a substituent such as a 2-methylcyclopropane, etc. I ^= Bu, Examples of the material hydrocarbon monomer (e) in the county of B can be listed as vinyl aromatics such as B, B, and 2, and 2, ethylene, and the like; 3-methylstyrene, 4 ~ P 1 1 Beneficial, 4 - cyclohexyl basic ethylene, 4 - dodecyl styrene, 2 ~ a Jiao, 4 r ^ -tt -T # Λ - base ~ 4 卞 phenyl benzene 4 One (n-butyl butyl) styrene and the like are ancient rain △ Gan Li... A multifunctional vinyl aromatic such as a vinyl aromatic group, such as dodecyl benzene, ρ-diethoxyphenyl, bis(ethylene)methane, etc., as a chain olefin (f) Examples are L 卞 series of ethylene; propylene, 1 - butene, 1 - pentylene, 1 - hexene, 3 - methyl T - 1 - butene, 3-methyl

2232-9438-PF 16 200848899 〜戊烯、4—甲基—j 一戊烯、彳〜 甲基—1 — Pj T ^ 已烯、4,4 一二甲基〜j〜 戊烯、3—乙基 1 一 己烯、4, 4 — 烯、4—乙基—丨〜己烯、◦— 八嵫 1 , 基一 1 —己烯、1〜岳秘 —癸烯、1 一十二碳烯、·!丄 辛烯、1 h 山 埽 1 —十四碳烯、1 —十丄俨κ 十八碳烯、1一二十碳 十/、石厌%、 己二烯 :基…-己二稀、5-甲基-14 4之奴數目2〜20之卜烯烴;“ 已 烯、1’7-辛二烯等之非共輛二稀等。 這些單體係可以分 用。 …獨或者是組合2種以上而使 述之各種單體之聚合方法係可以 用開環聚合法或加聚半 μ 刼…、吊法,例如採 钥、釕、鐵等之金屬配位化合物…:广適“吏用例如 別單獨或者是纽人2 ^二水合觸媒係可以分 單體之開環聚合物以及俨… 彳彳如纟得狀烯烴 下,合併兩者而稱為;Γ 單體之開環共聚物(在以 之狀能下:刺煙單體之開環(共)聚合物」。) 之狀心下’聚合觸媒 J ) if狀烯妗π 、 係來合觸媒中之金屬化合物· %狀~座早體之莫爾數比 物· 2, 000, 〇〇〇. 成為 1 · 100 〜玉: 取女十疋1·5〇〇〜1:〗η/ΊΓί ππη 1,000^1 : 500 non, .. ,_,刚、更加理想是 1: auu,000之範圍。 藉由前述之聚合而得 於要求而添ρ γ 衣狀_糸聚合物係可以由 叩外加虱。氳添加係通 作為氫L』、、加觸媒而進行。 輝你j以抹用例如在烯 而-般使用者。呈㈣1 7 合物之添加氧時 形式之均—系舾此主入 W用月才口勒(Ziegler s) ’、'、、貝益屬配位化合物觸媒、載體型貴金2232-9438-PF 16 200848899 ~pentene, 4-methyl-j-pentene, oxime~methyl-1 - Pj T ^ hexene, 4,4 dimethyl to j pentene, 3-B 1, 1-hexene, 4, 4 -ene, 4-ethyl-hydrazine-hexene, anthracene - octapeptide 1, keto-1-hexene, 1~ Yue Mi-decene, 1 - dodecene, ! Decene octene, 1 h Hawthorn 1 -tetradecene, 1 - 十丄俨κ octadecene, 1-20 octadecene, skeletal hexanyl, hexadiene: yl... - the number of slaves of methyl-14 4 is 2 to 20 olefins; "hexene, 1'7-octadiene, etc., non-common vehicles, etc. These single systems can be used. ... alone or in combination 2 The polymerization method of the above various monomers can be carried out by a ring-opening polymerization method or a polycondensation method, a hanging method, a metal coordination compound such as a key, a ruthenium, or an iron. For example, it is also possible to separate the monomer from the ring-opening polymer and the ruthenium according to the monomer 2 ^ dihydrate catalyst. For example, under the olefin, the two are combined; Γ the ring-opening copolymer of the monomer (In the case of the following: the open-loop (co)polymer of the puncturing monomer.") The sub-heart 'polymerization catalyst J'. If olefin π, the metal compound in the catalyst. The number of Mohrs in the shape of the early body is 2, 000, 〇〇〇. becomes 1 · 100 ~ jade: Take the female ten 疋 1 · 5 〇〇 ~ 1: η / ΊΓί ππη 1,000 ^ 1 : 500 non , .. , _, just, more ideal is 1: The range of auu,000. The ρ γ 糸 糸 polymer can be added by 前述 by the above-mentioned polymerization. The addition of 氲 is carried out as hydrogen L 』 and a catalyst. Hui you j to use, for example, in the olefin-like users. When the oxygen is added to the (4) 17 compound, the form is the same - the system is used for the main purpose of the use of the month of Ziegler s, ', 'Beiyi coordination compound catalyst, carrier type precious gold

2232-943 8-PF 17 200848899 屬系觸媒等。在這些氧 ^ j示T 並無引起改性皙孚純 極性基权功能基等之副反應,由能夠在聚生二性 叙不飽和鍵呈選擇性地進行氯添加之 :: 好是錄、料之貴金屬配位化合 &貝i取 給予性高之含氮雜環式香斧 、理想是電子 之舒觸媒。此外,環狀 ^物或者是麟類之所配位 %以上、更加理想是9G%以上。〗化羊係最好疋80 是,環狀:烴系聚合物係並無特別限定,但 气 I ^狀烯趣早體之開環(共)聚合物及這4b之 虱添加物;環狀烯烴單體和乙烯基脂環式烴單體之力Μ 聚物及其氯添加物;以及環狀稀煙==成共 單體之加成共聚物及其氫添加物所::::= 2物更加理想是環狀稀煙單體之開環(共)聚合物之氨 =:,環狀稀烴系聚合物係可以分別單獨或者是 、、且口 2種以上而使用不同組成等。 :為在本發明使用之環狀稀烴系聚合物係最好是具有 ^包含於具有極性基之環㈣煙系聚合物之極性基 數目係並無特別限定,極性基係可以包含相同或不同之種 類。此外’極性基係可以結合在環狀稀烴單體單位,也可 以結合在環狀婦烴單體以外之單體單位, 士 合在環狀烯烴單體單位。 疋、,,° 在本發明’環狀稀烴系聚合物係特別最好是具有質子 性極性基。藉由使用具有質子性極性基之環狀稀煙系聚合2232-943 8-PF 17 200848899 Is a catalyst, etc. In these oxygens, it is shown that T does not cause a side reaction such as a modified polar radical functional group, and the chlorine can be selectively added in the polyunsaturated unsaturated bond: The noble metal coordination compound & bei is a highly nitrogen-containing heterocyclic axe, ideally an electron catalyst. Further, the ring-shaped substance or the lignin has a coordination number of at least %, more preferably at least 9 G%. 〖The best sheep 疋80 is, ring: hydrocarbon polymer system is not particularly limited, but the ring I (co) polymer of gas I ^ olefin early body and the addition of this 4b ; ring; a ruthenium polymer of an olefin monomer and a vinyl alicyclic hydrocarbon monomer and a chlorine additive thereof; and an addition copolymer of a cyclic thin smoke == comonomer and a hydrogen additive thereof::::= The second embodiment is more preferably an ammonia of the ring-opening (co)polymer of the ring-shaped thinning monomer. The cyclic hydrocarbon-based polymer system may be used alone or in combination of two or more kinds, and different compositions may be used. The cyclic hydrocarbon-based polymer system used in the present invention is preferably one having a number of polar groups included in the ring-based polymer having a polar group, and the polar group may include the same or different The type. Further, the 'polarity group' may be bonded to the cyclic hydrocarbon monomer unit or may be combined with the monomer unit other than the cyclic hydrocarbon monomer to form a cyclic olefin monomer unit.疋,,, ° In the present invention, the cyclic aliphatic polymer-based polymer particularly preferably has a protic polar group. By using a circular flue gas polymerization having a protic polar group

2232-9438-PF 18 200848899 勿(在以下’有稱$「含質子性極性基之環狀烯烴系聚合 =」之狀發生。)’而提高後面敘述之感應放射線性樹 成物相對於活性放射線之感度或者是該組成物相對於 基板之密合性,因&,變得理想。含質子性極性基之環狀 烯烴系聚合物係可以分別單獨或者是組合2種以 不同組成等。 用2232-9438-PF 18 200848899 Do not (in the following 'there is a phenomenon called "polymerization of a cyclic olefin containing a protic polar group").) Increasing the inductive radioactive linear structure described later with respect to active radiation The sensitivity or the adhesion of the composition to the substrate is desirable because of & The cyclic olefin-based polymer system containing a protic polar group may be used alone or in combination of two or different compositions. use

作為在本發明之含質子性極性基之環狀稀煙系聚合物 :士如以下所心適合具有藉由化學式("所表示之構 以早位,更加理想是具有藉由化學式(工)所表示之構造 單位以及藉由化學< (π)所表示之構造單位。藉由化學 式(I )所表示之構造單位以及藉由化學式(π)所表八 之構造單位係皆環狀烯烴單體單位。 【化學式1】As the ring-shaped flue-cured polymer containing a protic polar group in the present invention, it is suitable to have a chemical formula (" as shown in the prior art, and more preferably has a chemical formula (work) The structural unit represented and the structural unit represented by chemical < (π). The structural unit represented by the chemical formula (I) and the structural unit represented by the chemical formula (π) are all cyclic olefins. Body unit. [Chemical Formula 1]

L在化學式 (I) y 、虱原子或 X η — R 基(X係 元有機基,Π係0或1 p,2y ,κ係可以具 有取代基之烷基、可以具有取代基之芳香族基、或者Θ所 子性極性基。)'R1〜R4中之至少一種係成為質子性 基之一 χη — R’·基。m係0〜2之整數。] 【化學式2】 2232-9438-PF 19 200848899L is a chemical formula (I) y, a ruthenium atom or an X η -R group (X-based organic group, lanthanide 0 or 1 p, 2y, an alkyl group which may have a substituent, an aromatic group which may have a substituent Or Θ Θ polar polar group.) At least one of 'R1 to R4' is one of protonic groups χη - R'· group. m is an integer from 0 to 2. ] [Chemical Formula 2] 2232-9438-PF 19 200848899

(π) Κ5〜R8係 乂任思之組合而5 s這些所結合之2個碳原子以及作 少成匕 或氮原子的3〜5員之雜環構造,該雜環係可 乳原子 2之整數。 有取代基。k係〇〜1 ’、 μ雜%具 在通式 I ),作為藉由Χ所示之二元有機U㈣ 例如亞甲基、乙烯基、裁基等0藉由R,所示之可乂牛 取代基之烧基係通常為直鏈或支化鍵之碳數目卜^^ 基,作為其例子係列舉甲基、乙基、n—丙基、異丙: 可以具有取代基之芳香族基係通常為碳數目6〜10=芳夭 族基,作為其例子係列舉苯基、节基等。作為烧基或= 族基之取代基係列舉甲基、乙基、n—丙基、異丙基、η: 丁基、異丁基等之碳數目i〜4之烷基;苯基、二甲苯美、 甲本基、萘基等之碳數目6〜12之芳基等。作為藉由只, 所示之質子性極性基係列舉前述之基。 在通式(JI) ,R5〜R8係作為以任意之組合而—起形 f這些所結合之2個碳原子之3員雜環構造’列舉例如環 氧構造等。此外’作為相同之5員雜環構造係列舉例如2 綾酸肝構造[ — 二《酿亞;(π) Κ5~R8 is a combination of 乂5s and 5 s of these two carbon atoms combined with a heterocyclic structure of 3 to 5 members which is less than a hydrazine or a nitrogen atom, and the heterocyclic ring is a milk atom 2 Integer. There are substituents. k is 〇~1 ', μ% is in the formula I), as a binary organic U (tetra) represented by Χ, for example, methylene, vinyl, base, etc., by R, yak as shown The alkyl group of the substituent is usually a carbon number of a linear or branched bond, and as an example thereof, a methyl group, an ethyl group, an n-propyl group, and an isopropyl group: an aromatic group which may have a substituent Usually, the number of carbons is 6 to 10 = aryl fluorenyl group, and examples thereof include a phenyl group, a benzyl group and the like. The substituents of the alkyl group or the substituent group are a group of alkyl groups having a carbon number of i to 4 such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an η: butyl group, an isobutyl group or the like; a phenyl group; An aryl group having a carbon number of 6 to 12 such as toluene, a methyl group or a naphthyl group. Only the above-mentioned series of protonic polar groups are shown by the above. In the general formula (JI), R5 to R8 are a three-membered heterocyclic ring structure in which two carbon atoms are bonded in an arbitrary combination, and examples thereof include an epoxy structure. In addition, as the same 5-member heterocyclic structure series, for example, 2 citrate liver structure [-

構造[-c(=0) — N—c( = 〇)—]等。作為結合於該雜環 2232-9438-PF 20 200848899 之取代基係列舉例如苯基、萘基、蒽基等。 在含質子性極性基之環狀烯煙系聚合物,具有質子性 極性基之單體單位和這個以外之單體單位之比帛(具有質 子性極性基之單體單位/這個以外之單體單位)係:重量 比而通常成為10。/0〜10/90、最好是9〇/1〇〜2。/8〇、 更加理想是80/20〜30/70之範圍。 作為在本發明使用之含質子性極性基之環狀稀煙系聚 s物之理想之製造方法係可以列舉聚合具有質子性極性基 之環狀烯煙單體⑴,由於要求而進行氫添加之方法。 ⑪此外’在本發明使用之含質子性極性基之環狀烯烴系 :口物係也可以藉由在不具有質子性極性基之環狀稀煙系 聚合物,制f知之方法,#由使収性劑而導人質子性 :H:之方法’來得到環狀烯烴系聚合物。在此時,就在 導入質子性極性基之前後之聚合物而言,也可以進行氫添 加0 ^ 2為用以在不具有質子性極性基之環狀烯烴系聚合物 導入質子性極性基之改性劑係通常使用在一分子内具有反 應性之碳一碳不飽和鍵和質子性極性基之化合物。作為此 =化合物之具體例係可以列舉丙烯酸、甲基丙烯酸、當歸 ^易各I 油I、反油酸、芥酸、巴西稀酸、順丁烯二 2田馬酸、擰康酸、中康酸、衣康酸、阿托酸、肉桂酸 等之不飽和羧酸;烯丙基醇、甲基乙烯基甲醇、八豆基醇、 、稀丙基醇、1—本基乙烯一 1 一醇、2—丙烯一1一醇、3 丁烯〜1—醇、3〜丁烯一 2 —醇、3一甲基一 3_ 丁烯一工Construct [-c(=0) — N—c( = 〇)—] and so on. As a series of substituents bonded to the heterocyclic ring 2232-9438-PF 20 200848899, for example, a phenyl group, a naphthyl group, an anthryl group or the like can be mentioned. In a cyclic olefin-based polymer containing a protic polar group, a ratio of a monomer unit having a protic polar group to a monomer unit other than the monomer unit (a monomer unit having a protic polar group / a monomer other than this) Unit): It is usually 10 in weight ratio. /0~10/90, preferably 9〇/1〇~2. /8〇, more ideally the range of 80/20~30/70. An ideal method for producing a cyclic flue-cured polys species containing a protic polar group used in the present invention is a cyclic olefinic monomer (1) having a protic polar group, and hydrogen is added as required. method. Further, 'the procyclic polar group-containing cyclic olefin system used in the present invention: the oral system can also be obtained by a ring-shaped dilute-smoke polymer having no protic polar group. The method of introducing a proton: H: method to obtain a cyclic olefin polymer. At this time, in the case of the polymer before and after the introduction of the protic polar group, hydrogen addition of 0 ^ 2 may be carried out to introduce a protic polar group into the cyclic olefin polymer having no protic polar group. The modifier is usually a compound having a reactive carbon-carbon unsaturated bond and a protic polar group in one molecule. Specific examples of the compound include acrylic acid, methacrylic acid, angelica, I, I, oleic acid, erucic acid, brazil acid, maleic acid, succinic acid, and turmeric. An unsaturated carboxylic acid such as acid, itaconic acid, atropic acid or cinnamic acid; allyl alcohol, methyl vinyl methanol, octadecyl alcohol, dilute propyl alcohol, 1-benyl ethylene-1-ol , 2-propene-1-alcohol, 3-butene-1-alcohol, 3-butene-2-alcohol, 3-methyl-3-butene

2232-9438-PF 21 200848899 曱基一 2 — 丁稀一 1 一醇、 甲基一3 — 丁稀一 1—醇、 -醇 -醇 曱基一 3— 丁烯一 2 4 戊細一1 —辭、4 — 甲基—4一戊稀―1 一醇、2 一己烯—1—醇等之不飽和醇 等。改性反應係可以按照常法,通常進行於自由基產生劑 之存在下。這些改性劑係可以分別單獨地使用,也可以併 用2種以上。 在前述之含質子性極性基之環狀烯烴系聚合物之製 法,可以使用其先驅物’來作為質子性極性基。也就是說, 可以使用具有其質子性極性基之先驅物之單體,來取代具 有質子性極性基之單體。此外,作為改性劑係可以使用具 有其先驅物之改性劑,來取代質子性極性基。質子性極性 基之先驅物係配合於其種類,藉著由於光或熱所造成之分 解、水解等之化學反應而轉換成為質子性極性基。 例如在含貝子性極性基之環狀烯烴系聚合物之質子性 極性基成為《之狀態下,作為質子性極性基之先驅物係 可以使用S旨基’接著’適當地轉換成為叛基。 另方面不具有質子性極性基之環狀烯烴系聚合物 係可以按照常法,例如使用前述之單體(a)、(e)〜⑴ 而得到。 在本舍日月使用之環狀稀烴系聚合物《重量平均分子量 (Mw )係通常成為7 吊风馮1,000〜1,000,00()、最好是1,500〜 1〇〇, 〇〇0更加理想是2, 000〜1〇, 〇〇〇之範圍。 在本毛日月使用之環狀烯烴系聚合物之分子量分布係以 重量平均分子量/叙、τ , 文平均分子量(Mw/ Μη )之比值而通常2232-9438-PF 21 200848899 曱基一 2 — butyl 1 - ol, methyl - 3 - butyl 1 - alcohol, - alcohol - alcohol thiol - 3 - butene - 2 4 pentene 1 - Resin, 4 - methyl - 4 - pentacene - 1 -alcohol, 2 - hexene - 1 - alcohol and other unsaturated alcohols. The modified reaction system can be carried out in the usual manner, usually in the presence of a radical generating agent. These modifiers may be used alone or in combination of two or more. In the above-described method for producing a cyclic olefin polymer containing a protic polar group, the precursor ' can be used as a protic polar group. That is, a monomer having a protonic polar group can be used instead of the monomer having a protic polar group. Further, as the modifier, a modifier having a precursor thereof may be used instead of the protic polar group. The precursor of the protic polar group is converted into a protic polar group by a chemical reaction such as decomposition or hydrolysis by light or heat. For example, in the case where the protic polar group of the cyclic olefin polymer containing a shell-like polar group is "in the state of the protonic polar group, the S group can be used" and then appropriately converted into a rebel group. Further, the cyclic olefin polymer having no protic polar group can be obtained by a usual method, for example, using the above monomers (a) and (e) to (1). The cyclic dilute hydrocarbon polymer used in the present month has a weight average molecular weight (Mw) of usually 7 to 1,500 ft., preferably 1,500 to 1 〇〇. 〇〇0 is more ideally 2, 000~1〇, the range of 〇〇〇. The molecular weight distribution of the cyclic olefin polymer used in the present day is usually the ratio of the weight average molecular weight/synthesis, τ, and the average molecular weight (Mw/Μη).

2232-9438-PF 22 200848899 成為4以下、#杯η ο^ 取好& 3以下、更加理想是2.5以下。 在本發明使用之環狀.烯煙系聚合物之 以下、最好是50以下、更加理^ m ^為 狀稀烴系聚合物之蛾值成為該範圍的二;:環 狀保持性良好而變得理想。 貝]特別疋耐熱形 :發明之有機保護膜係最好是藉由 成,但是,和基材!1^ |狀_系聚合物而形 程適合性良好,因此,其 风^後之製 甚至取好疋有機保護 極性基之環狀稀煙系聚合物之交聯物而形成/、、有 本么月之主動矩陣基板係可以按,昭例如前、十、直 1或2所述之習知之古土“ 妖',、、例如别述專利文獻 白夫之方法而進行製造,# 製造效率良好,因此,以下之細作谷易且 化形成於基材上之TFT f ' 就疋具有··(〗)氧 之表面而得:在二:_體)之非結晶質… ㈣在表面具有矽氧化層之 程;以及(2)在非結晶㈣心 貝夕膑β之製 性樹脂組成物而形< 、猎由感應放射線 板之製造方法。树月曰膜之製程的本發明之主動矩陣基 質二外稱書,呈便利地將表面氧化前之非結晶 梦膜,稱為非結晶W料面氧化後之非結晶質 在本發明之主動矩陣基板之製 化TFT之非έ士 a Μ Α Q i ),虱 是,能约以二…膜A表面之方法係並無特別限定,但 疋月匕夠以刼作容易,夾古吟安1L片 夕率也氧化非結晶質矽膜A之2232-9438-PF 22 200848899 Be 4 or less, #杯η ο^ Take & 3 or less, more preferably 2.5 or less. In the ring-shaped olefin-based polymer used in the present invention, it is preferably 50 or less, and more preferably, the moth value of the dilute-based polymer is two in the range; the ring retainability is good. Become ideal. ]]Special 疋 heat-resistant shape: the organic protective film of the invention is preferably formed by, but, and the substrate is good in shape, so that the wind is even after the system Take the crosslink of the cyclically smoky polymer of the organically protected polar group to form /, and the active matrix substrate system of the present month can be as described, for example, before, ten, straight 1 or 2 Knowing the ancient soil "demon", for example, the patent document Baifu method is used for manufacturing, # manufacturing efficiency is good, therefore, the following fine-grained and easy-to-form TFTs formed on the substrate have ()) the surface of oxygen: amorphous in the second: _ body) (d) the process of having a bismuth oxide layer on the surface; and (2) the resin composition in the amorphous (four) heart 膑 膑 β The method of manufacturing the induction radiation plate of the invention. The active matrix substrate of the present invention is a non-crystalline dream film, which is a non-crystalline material before the surface oxidation. Non-crystalline material after surface oxidation is not a gentleman in the TFT of the active matrix substrate of the present invention Q i), lice are, ... can be from about two to a surface of a film of A-type is not particularly limited, but the piece goods to be my Bookbag Help dagger month for easy clip 1L sheet Xi An ancient Yin rate of non-crystalline silicon oxide film of A

2232-9438-PF 23 200848899 表面口此取好是藉著由和臭氧水之 體氣氛之料_射、錢純氣體胃=化性氣 至包含氧化性氣體之《中之曝露所構及曝露 少一種方法而進行。 群、、且璉出之至 作為藉由和臭氧水之接觸而氧化非夕 之方法係列舉例如在室 、夕《A表面 以上(通常臭氧濃^ / )’使得臭氧濃度5_ 、、吊吴乳很度之上限為2〇 鐘以上(通常接觸時間之上限為6。"少二水^ 質石夕膜A之表面之方法。葬由“/^里)接觸到非結晶 晶質矽膜A之表面π S 〇六虱水之接觸而氧化非結 石夕膜Β:龜声’:到在表面具有石夕氧化層之非結晶質 接觸時間或接觸時之臭氧水之溫度而進行控度、 作為ΙΙΦ錢化性㈣m料 :曰…表面之方法係列舉例如在包含氧化性 :二:Γ外線光照射於非結晶質石夕膜A表面之方法。 A之/面W條件㈣舉例如在室温,對於非結晶質石夕膜 包含大約2G體㈣之氧來作為氧化性氣體之 陶以上(通常強度之 =,來照射6。秒鐘以一以下之波長之議 “牛。軋化性氣體之濃度係通常由2〇體積%開始至ι〇〇 = 就是單獨氧化性氣體)。作為包含於氧化性氣 -礼死之氧化性氣體以外之氣體係列舉例如氣、氛、氯等 =有氣體或氮等之惰性氣體。藉由紫外線照射而氧化非 曰a貝石夕膜Α之表面’得到在表面具有碎氧化層之非結晶2232-9438-PF 23 200848899 The surface of the mouth is taken by the atmosphere of the body of the ozone water _ shot, money pure gas stomach = chemical gas to the oxidizing gas containing the exposure and less exposure One method is carried out. Groups, and extracts as a series of methods for oxidizing eve by contact with ozone water, for example, in the room, on the evening of "A surface (usually ozone concentration ^ / )", the ozone concentration is 5_, The upper limit is 2 〇 or more (usually the upper limit of the contact time is 6.) The method of the surface of the sapphire film A. The burial is contacted by the "/^ 里" to the amorphous crystalline enamel film A. The surface of π S 〇 虱 虱 而 而 氧化 氧化 氧化 Β Β Β Β Β Β Β Β Β Β 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟 龟ΙΙ Φ 钱 钱 四 四 四 四 四 四 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面 表面For the amorphous crystalline stone, about 2G of oxygen (4) is contained as the oxidizing gas above the pottery (usually the intensity =, the irradiation is 6. Seconds to a wavelength of less than or equal to the "bull. The concentration of the rolling gas" The system usually starts from 2% by volume to ι〇〇 = is the oxidation alone Body). Examples of the gas contained in the oxidizing gas-oxidized gas other than the oxidizing gas include gas, atmosphere, chlorine, etc., and an inert gas such as gas or nitrogen. Oxidizing the surface of non-曰a 石石夕膜Α by ultraviolet irradiation to obtain a non-crystalline having a broken oxide layer on the surface

2232-9438-PF 24 2008488992232-9438-PF 24 200848899

質石夕膜B。石夕氧化;> pL ^羊1化層之尽度係例如可以籍 波長、強度、照射時間或氧化性氣體之濃戶:外線之 作為藉由在氧化性氣體氣氛之加熱而氧化制。 膜A表面之方法係列舉例如在包含氧化性氣體t::, 通過陣列基板之加熱而加熱非結晶質^ a 2钱中, 說明書,所謂陣列基板係指在基材 去。在本 之電路之所構成之基板。作為該方法之置既定 包含大約20體積%之氧來作為氧化性氣體之空=如在 2〇rc以上,加熱非結晶質矽膜4之6。分:& ’於 編氣體之濃度係通常由2。體軸:3二 (也就是單獨氧化性氣體)。作為包含於氧化性 ^化性氣體以外之氣體係列舉例如氦、氖、氬i之=Quality stone film B. The oxidation degree of the pL ^ sheep layer can be oxidized by, for example, wavelength, intensity, irradiation time or oxidizing gas concentrate: the outer line is heated by heating in an oxidizing gas atmosphere. The method of the surface of the film A is, for example, in the case where the oxidizing gas t:: is heated by the heating of the array substrate to heat the amorphous material. The specification, the array substrate, refers to the substrate. The substrate formed by the circuit of the present invention. As the method, it is intended to contain about 20% by volume of oxygen as the oxidizing gas. If the temperature is above 2 〇rc, the amorphous ruthenium film 4 is heated. Points: & 'The concentration of the gas is usually 2. Body axis: 3 2 (that is, a separate oxidizing gas). As a series of gases other than the oxidizing chemical gas, for example, yttrium, ytterbium, and argon =

” 乳體。猎由加熱而氧化非結晶質石夕膜A 、面’付到在表面具有石夕氧化層之非結晶質石夕膜B。石夕 =層之厚度係可以藉由調整氧化性氣體之漠度、加孰、、w 度或加熱時間而進行控制。 ’里 作為藉由曝露至包含氧化 化非結晶質秒膜“面二 之電漿中之曝露而氧 = ;;1Γ此種電浆氣氛中來維持非結晶質…"The milk body. Hunting is heated to oxidize the amorphous crystalline stone film A, and the surface is paid to the amorphous crystalline stone film B having a stone oxide layer on the surface. The thickness of the layer can be adjusted by adjusting the oxidation property." The gas is controlled by the indifference, twisting, w degree or heating time. 'In the case of exposure to oxygen in the plasma containing the oxidized amorphous non-crystalline second film "face 2"; Maintain plasma in the plasma atmosphere...

Cm以上(通常輸出之上限為l00W/cm2),產 =1。體積%之氧來作為氧化性氣體之電裝,在其中, 、准持6 0秒鐘以上之非纟士 性氣於之.…广”質石夕膜A的條件。謝之氧化 ,辰又通常由10體積%開始至100體積%。作為Above Cm (usually the upper limit of output is l00W/cm2), yield = 1. The volume of oxygen is used as the oxidizing gas in the electric device, in which, the non-gentleman's gas is allowed to hold for more than 60 seconds. The condition of the "high-quality" stone film A. Xie's oxidation, Chen Usually starting from 10% by volume to 100% by volume.

2232-943 8-PF 25 200848899 中之氧化性氣體以外之氣體係列舉— 之稀有氣體。藉由電浆之作 乳、现、氬等 面,得到在表面且女卜 羊非結晶質矽膜A之表 ,、有石夕氧化層之非姓日片 層之厚度係可以藉由調整氧化性氣體:夕膜?氧化 維持時間而進行控制。 /辰又電漿輸出或 二卜;作為前述之氧化性氣體係列舉例如氧(。2)、 -軋化碳(㈤、水(h2〇)、臭氧㈤、一 等。一妒而士 ώ ^ 乳化鼠(ν2〇)2232-943 8-PF 25 The gas series other than oxidizing gases in 200848899 - rare gases. By means of plasma as milk, present, argon, etc., the surface of the non-crystalline enamel film A on the surface and the female yam is obtained, and the thickness of the non-named slab layer of the shixi oxide layer can be oxidized by adjustment. Sex gas: 夕膜? The oxidation is maintained for a while to control. / Chen and plasma output or two; as the aforementioned oxidizing gas series, for example, oxygen (. 2), - rolled carbon ((5), water (h2〇), ozone (five), first class, etc. Emulsified mouse (ν2〇)

山’又5 ,六、氧(03)係具有強烈之氧化作用,二氧 化碳(㈤或-氧化氮(_等之氧化作用係變弱。在藉 由曝路至電漿中之所造成之方法而氧化非結晶質矽膜Α之 表面之狀悲下,作為氧化性氣體係特別適合為氧(⑴)。 藉由以上而在基材上之TFT之非結晶質矽膜,於其表 面,形成矽氧化層,但是,在此,可以還對於非結晶質矽 膜,進行甲矽烷基化[製程(;[),]。The mountain '5, 6, and oxygen (03) have strong oxidation, and the oxidation of carbon dioxide ((5) or -nitrogen oxide (_ etc. is weakened. The method caused by exposure to the plasma) The surface of the oxidized amorphous ruthenium film is particularly suitable as oxygen ((1)) as an oxidizing gas system. The amorphous ruthenium film of the TFT on the substrate is formed on the surface thereof. The oxide layer, however, here, it is also possible to carry out the formylation [process (; [),] for the amorphous ruthenium film.

作為用以對於形成在基材上之TFT之非結晶質矽膜之 表面來進行甲矽烷基化之所使用之甲矽烷基化劑係可以列 舉例如六甲基二矽氨烷、二甲基二氯矽烷、三矽氨烷、N 一三曱基曱矽烷基乙醯胺基、N,0 —雙(三甲基甲矽烷基) 乙醯胺基、N—甲基一 N —三曱基甲矽烷基乙醯胺基、N —甲 基一 N—三曱基曱矽烷基三氟乙醯胺基、N—三甲基甲矽烷 基二曱基胺、N—三甲基曱矽烷基二乙基胺、N,0—雙(三 曱基曱矽烷基)三氟乙醯胺基、N —三曱基甲矽烷基咪唑、 四甲基二石夕氨烧、t 一 丁基二曱基氯石夕烧、N—曱基一N —(t 一丁基二曱基甲矽烷基)三氟乙醯胺基、二氯曱基四曱基 26The mercaptan alkylating agent used for the isomerization of the surface of the amorphous ruthenium film of the TFT formed on the substrate may, for example, be hexamethyldioxane or dimethyldiene. Chlorodecane, triaminane, N-trimethylsulfanylalkylamine, N,0-bis(trimethylmethylalkyl)ethylamine, N-methyl-N-trimethyl矽alkylacetamido, N-methyl-N-trimethylsulfonyltrifluoroacetamidoamine, N-trimethylformamidinyldidecylamine, N-trimethyldecylalkyldiethyl Base amine, N,0-bis(trimethyldecylalkyl)trifluoroacetamido, N-trimethylcarbamimidazole, tetramethyldiazepine, t-butyldidecyl chloride石夕烧, N-曱基-N-(t-butyl dimethyl mercaptoalkyl) trifluoroacetamido, dichloroindenyl tetradecyl 26

2232-943 8-PF 200848899 二矽氨烷、氯甲基二甲基氯矽烷、溴甲基二甲基氯矽烷、 十八烧基三氯石夕燒、N,N,(三甲基甲石夕烧基)尿素、N-甲土甲夕烧基N,N —二苯基尿素、n,〇 —雙(三甲基 甲石夕烧基)氨基甲酸酯、N,〇—雙(三甲基甲石夕㈣)氨基 男酉文酉曰一甲基甲矽烷基三氟甲烷磺酸等。在這些當中, 防止水刀彳又入至非結晶質矽膜之表面和有機保護膜之間之 侵入防止效果以及兩者之界面之密合性提升效果呈良好, 因此,特別是可以適當地使用六甲基二石夕氨烧。這些甲石夕 烧基化劑係可以分別單獨或者是混合2種以上而使用。 在本發明之主動矩陣基板之製造方法,在使得形成於 基材上之TFT之非結晶質石夕膜之表面接觸到甲石夕烷基化劑 而對於該表面進行甲㈣基化之方法,並無特別限制。列 舉例如使侍形成TFT之陣列基板,由加熱板開始離開而搬 入至包括加熱板之甲矽烷基化處理室,對於處理室内,進 行減壓,導X甲矽烷基化劑之蒸氣,#於加純,進行加 熱,使得陣列基板,接近至加熱板,在5(rc以下,均勻地 擴散甲矽烷基化劑之蒸氣,停止甲矽烷基化劑之蒸氣之導 入和排氣,陣列基板接觸到加熱板,在80〜9(TC之溫度進 仃甲矽烷基化反應之後,藉由氮而取代甲矽烷基化劑之蒸 氣’停止甲石夕统基化反應的方法。甲石夕燒基化係進行於進 行陣列基板和甲矽烷基化劑之蒸氣之接觸之間。在該狀能 下,甲矽烷基化劑之濃度係最好是〇·15體積%。如果藉由 前述之方法的話,則可以包含TFT之非結晶質矽膜之^面 而對於陣列基板之整個面進行曱矽烷基化。接觸係通常可2232-943 8-PF 200848899 Dioxane, chloromethyldimethylchlorodecane, bromomethyldimethylchlorodecane, octadecyl triclosan, N,N, (trimethylammonite) U.S. base) urea, N-carbohydrate, N,N-diphenyl urea, n, bismuth-bis(trimethylmethyl sulphate) carbamate, N, bismuth-bis (three Methyl methacrylate (4)) amino male 酉 酉曰 甲基 monomethyl methacrylate trifluoromethane sulfonic acid and the like. Among these, the effect of preventing the intrusion prevention between the surface of the amorphous ruthenium film and the organic protective film and the adhesion improvement effect of the interface between the two are good, and therefore, it can be suitably used. Hexamethyl bismuth amphoteric ammonia. These methicone base-forming agents may be used singly or in combination of two or more kinds. In the method for producing an active matrix substrate of the present invention, a method of subjecting a surface of an amorphous crystal film of a TFT formed on a substrate to a metal alkylation agent to form a surface of the substrate, There are no special restrictions. For example, an array substrate for forming a TFT is introduced from a heating plate to be carried into a formylation treatment chamber including a heating plate, and a pressure is reduced in the processing chamber to introduce a vapor of the X-methylation agent. Pure, heating, so that the array substrate, close to the heating plate, below 5 (rc, uniformly diffuse the vapor of the methyl hydrazine alkylating agent, stop the introduction and venting of the vapor of the methyl hydrazide agent, and contact the substrate with the heating A method for stopping the crystallization of a methadone by replacing the vapor of the formazan alkylating agent by nitrogen after the alkylation reaction of TC at 80 to 9 (the temperature of TC is introduced into the TC). Between the contact of the array substrate and the vapor of the alkylation agent, the concentration of the formazanating agent is preferably 〇15% by volume, if by the foregoing method, The ruthenium alkylation of the entire surface of the array substrate may be carried out by including the surface of the amorphous ruthenium film of the TFT.

2232-943 8-PF 27 200848899 以進行1分鐘以上。 此外,除了前述之方法以外,還列舉例如 之容器,於常溫、常壓,同時密封陣列基板和少:才 織劑而對於陣列基板上之TFT之非結晶質秒::石夕 來進行甲石夕烧基化之方法。如果藉由此種方法的爷,= 甲石夕烧基化。 狀表面,來進行 在製程⑴’於製程⑴所得到之非結晶質石夕膜b ^面上,猎由感應放射線性樹脂組成物而形成有機保護 定 物 Γη二二應::線性樹脂組繼 ;二:7二 有極性基之環狀烯烴系聚合 父聯劑、感應放射線化合物和溶劑所構成者予以使用 作為具有極性基之環狀婦煙系聚合物之理 = 化學式⑴所表示之構=:::造單…或藉由 再k早位之裱狀烯烴系聚合物。 作為交聯劑之理想例係列舉具有2個以 取好疋3個以上之環氧基之雙紛A型環氧樹脂、雙齡F型 絲樹脂、苯㈣㈣環氧樹脂、W祕型環氧樹脂、 環狀脂肪族環氧_、脂肪族環氧丙基 軸、料丙㈣S旨聚合物等之多官能環氧化合物。 作為感應放射線化合物(可以藉由紫外線或電子線等 : = ==化學反應之化合物)之理想例係列2232-943 8-PF 27 200848899 For more than 1 minute. In addition, in addition to the foregoing methods, for example, a container is sealed at room temperature and normal pressure while sealing the array substrate and a small amount of non-crystalline agent for the TFT on the array substrate: The method of smelting base. If the method is used by the master, = 甲石夕化化化. The surface is formed in the process (1)' on the amorphous surface of the amorphous film obtained from the process (1), and the organic resin is formed by the composition of the inductively radiating linear resin. Γη二二:: Linear resin group ; 2: 7: A cyclic olefin having a polar group, a polymeric parent compound, an inductive radiation compound, and a solvent, which are used as a ring-type maternity polymer having a polar group = the structure represented by the chemical formula (1) = ::: Make a single... or by a k-type olefin-based polymer. As a series of ideal examples of the crosslinking agent, there are two double-type A-type epoxy resins, two-year-old F-type silk resin, benzene (tetra) (tetra) epoxy resin, and W-type epoxy which have three or more epoxy groups. A polyfunctional epoxy compound such as a resin, a cyclic aliphatic epoxide, an aliphatic propylene propylene shaft, or a propylene (IV) S polymer. An ideal example series for inductive radiation compounds (a compound that can be chemically reacted by ultraviolet light or electron beam: = ==)

2232-9438-PF 28 200848899 氮基一 4 —磺酸氯化物、1,2 —苯醌二疊氮基一 5 —磺酸氯化 物等之醌二疊氮基磺酸鹵化物和〗,1 3 一三(2, 5 —二甲基 —4 —羥苯基)一3—苯基丙烷、4,4,一[1 一 [4一[1一[4 一經苯基]—1—甲基乙基]苯基]乙叉]雙酚等之具有苯酚 性羥基之化合物之酯化合物等之光氧產生劑。 可以在此種組成物,除了慣用於習知之感應放射線性 樹脂組成物之其他成分以外,例如還包含膠質二氧化矽, 來作為無機微粒。2232-9438-PF 28 200848899 Niobyl-4-oxosulfonate chloride, 1,2-benzoquinonediazide-5-sulfonic acid chloride, etc. Tris(2,5-dimethyl-4-hydroxyphenyl)-3-phenylpropane, 4,4,-[1 -[4-[1-[4-monophenyl]-1-methyl) A photooxygen generator such as an ester compound of a compound having a phenolic hydroxyl group such as phenyl]ethylidene] bisphenol. In addition to the other components conventionally used for the known inductive radiation resin composition, such a composition may contain, for example, colloidal ceria as the inorganic fine particles.

此外’作為溶劑係列舉例如單烷撐乙二醇溶媒;聚烷 撐乙二醇溶媒;單烷撐乙二醇烷基酯溶媒;聚烷撐乙二醇 烷基酯溶媒;單烷撐乙二醇二酯溶媒;聚烷撐乙二醇二酯 溶媒等。Further, 'as a solvent series, for example, a monoalkylene glycol solvent; a polyalkylene glycol solvent; a monoalkylene glycol alkyl ester solvent; a polyalkylene glycol alkyl ester solvent; a monoalkylene ethylene glycol Alcohol diester solvent; polyalkylene glycol diester solvent.

以上之感應放射線性樹脂組成物係正型之例子,但 是,也可以是負型。此種組成物係可以按照習知之方法而 進行製:^此外,使用於本發明方法之感應放射線性樹月旨 、、且成物之S1悲成分》農度係可以考慮需要之有機保護膜之厚 度,塗敷方法等而適當地進行選定,但是,最好是5〜4〇 重里%凋製之感應放射線性樹脂組成物係通常最好是在 使用孔徑ο·1〜5"之過濾器等而除去異物等之後,進行 塗敷。 有機保護膜係使用前述之感應放射線性樹脂組成物而 形成’細作簡便且製造效率良好,因此,變得適當。於是, 有機保遵膜係通當葬由、篇+、表 有機伴^成。所謂濕式法係構成 有钱保之有機高分子和由 而要所添加之其他之練合The above-mentioned inductive radiation resin composition is an example of a positive type, but it may be a negative type. Such a composition can be produced according to a conventional method: In addition, the inductive radiographic tree used in the method of the present invention, and the S1 composition of the product can be considered as an organic protective film. The thickness, the coating method, and the like are appropriately selected. However, it is preferable that the inductive radiation resin composition of 5 to 4% by weight is usually used in a filter having an aperture of ο·1 to 5" After the foreign matter or the like is removed, the coating is performed. The organic protective film is formed by using the above-described inductive radiation resin composition, and it is simple and easy to manufacture, and therefore it is suitable. Therefore, the organic film is the burial, the article +, the table organic partner. The so-called wet method constitutes an organic polymer with money and other exercises to be added.

2232-943 8-PF 29 200848899 劑,溶解於溶媒,得到溶液 行成膜的方法。作為該方法二=,除去溶媒而進 法等。如果藉由這也方法的=或薄膜層積 於陣列基板之整個面‘則通常有機保護膜係形成 Γ ::之:敷法係在感應放射線性樹脂組成物塗敷於陣 歹j 土板上之後,進行加熱乾燥而除去溶媒的方法。作為感 應放射線性樹脂組成物塗敷於陣列基板上之方法係可: 舉例如喷射法、旋轉塗敷法、麼磨 刀法、轉動塗敷法、桿條塗敷法、^去_塗敷法、刮 燥溫度係可以配合於各個成分之種法等。加熱乾 、隹m… 们成刀之種類或練合比例而適當地 :、、㊉疋30〜15(rc。加熱乾燥時間係可以配合 於各個成分之種類或練合比例而適當地進 〇· 5〜90分鐘。 < 中疋 前述之薄膜層積法係在感應放射線性樹脂組成物 於樹脂薄膜或金屬薄膜等之B台座薄膜形成用基材上之 後’猎由加熱乾燥而除去溶媒,得到B台座薄膜,接著, 該B台座薄膜層積於陣列基板上的方法。加熱乾燥條件係 可以配合於各個成分之種類或練合比例而適當地進行選 擇,加熱溫度係通常是30〜15(rc,加熱時間係通常是。5 〜90分鐘。薄膜層積係可以使用加壓層合機、沖床、真空 層合機、真空沖床、壓輥層合機等之壓合機而進行。、 _藉=上而在非結晶質石夕膜“表面上,形成有機保 濩膑。该有機保護膜係通常在這個,照射活性放射線,在 «中’形成潛像圖案’接著’藉由接觸顯影液而使得潛2232-943 8-PF 29 200848899 A method in which a solvent is dissolved in a solvent to obtain a solution. As the method 2, the solvent is removed and the reaction is carried out. If the method of this method or the film is laminated on the entire surface of the array substrate, then the organic protective film is usually formed into Γ:: the coating method is applied to the inductive radiation resin composition on the 歹j soil plate. Thereafter, the method of heating and drying to remove the solvent is performed. The method for applying the composition of the inductive radiation linear resin to the array substrate is as follows: for example, a spray method, a spin coating method, a knife sharpening method, a rotary coating method, a bar coating method, a coating method, and a coating method. The drying temperature can be matched with the method of each component. Heat dry, 隹m... We can form the type of knife or the proportion of the fit and appropriate:,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, 5 to 90 minutes. The film deposition method described above is carried out by heating and drying to remove the solvent after the radiation-sensitive resin composition is applied to a substrate for forming a B-seat film such as a resin film or a metal film. The B pedestal film is followed by the method of laminating the B pedestal film on the array substrate. The heating and drying conditions can be appropriately selected in accordance with the type or the ratio of the respective components, and the heating temperature is usually 30 to 15 (rc The heating time is usually 5 to 90 minutes. The film lamination can be carried out using a press machine such as a pressure laminator, a press machine, a vacuum laminator, a vacuum press, or a press roll laminator. = on the surface of the amorphous crystalline film "on the surface, the formation of organic protection. This organic protective film is usually here, irradiating active radiation, forming a latent image pattern in «中' and then 'by contacting the developer Make Latent

2232-943 8-PF 30 200848899 像圖案呈顯在化,進行圖案化。可 以精田此種4呆作而容易 地形成作為接觸孔之孔圖案。 活性放射線係如果是能夠活化感應放射線化合物而改 變感應放射線性樹脂組成物之鹼可溶性的話,則並無特別 限制,例如可以列舉紫外線、g射線或i射線等之單一波 長之紫外線、KrF準分子雷射光、ArF準分子雷射光等之光 線,電子線等之粒子線等叫乍為呈選擇性地照射這些活性 放射線來成為圖案狀而形成潛像圖案的方法係可以列舉例 如藉由縮小投影曝光裝置等且透過遮罩圖案而照射紫外 線:§射線、1射線、KrF準分子雷射光、ArF準分子雷射 給的方法、以及藉由電子線等之粒子線而進行描 6曰:、。可以在照射活性放射線之後,由於需要 6〇〜:广對於有機保護㈣ m安、用以對於藉由活性放射線之照射之所形成之、、既像 圖案進行顯影而推 > 此; | /取 <,曰像 1: 仃頌在化的顯影液係可以使用鹼性化人 物之水性溶液。作Α 化σ 氧化鉀尊…物係可以使用氳氧化納或氫 = …氫氧化物或心基銨氫 性媒體係可以使用水何—種。作為驗水性溶液之水 鹼水性溶液係可㈣力乙醇等之水溶性有機溶媒。 、、適§ 1之界面活性劑等。 作马在具有潛像 法係可以列舉例如將! 機Μ膜來接觸顯影液的方 溫度係通常切拌法、㈣法、浸潰法等。顯影 為了在像這二:影時間係通常3。,秒鐘。 图木化之有機保護膜形成於陣列基板上2232-943 8-PF 30 200848899 The pattern is visualized and patterned. It is possible to easily form a hole pattern as a contact hole by using such a 4-station. The actinic radiation system is not particularly limited as long as it can activate the inductive radiation compound and change the alkali solubility of the inductive radiation resin composition, and examples thereof include ultraviolet rays of a single wavelength such as ultraviolet rays, g rays, or i rays, and KrF excimer thunder. Light rays, ArF excimer laser light, or the like, a particle line such as an electron beam, or the like is a method of selectively irradiating the active radiation to form a pattern to form a latent image pattern, for example, by reducing the projection exposure apparatus. The ultraviolet ray is irradiated through the mask pattern: § ray, 1 ray, KrF excimer laser light, ArF excimer laser, and a particle line by an electron beam or the like. After the irradiation of the active radiation, it is necessary to use 6〇~: extensively for the organic protection (4) mA, for the formation of the irradiation by the active radiation, and to develop the image like a pattern><Image 1: The alkaline solution of the alkaline person can be used as the developing solution. For the σ 氧化 氧化 氧化 尊 尊 尊 尊 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以The aqueous alkaline solution which is a water-repellent solution is a water-soluble organic solvent which can be (iv) a force of ethanol or the like. , and the surfactant of § 1 is suitable. The method of the latent image method is, for example, a method in which the film is contacted with the developer, and the temperature is usually a chopping method, a (four) method, a dipping method, or the like. Development In order to be in this two: shadow time system usually 3 . , seconds. The organic protective film of the wood is formed on the array substrate

2232-943 8-PF 200848899 後由於要求而除去基板上、基板背面和基板端部之顯 影殘渣,因Jf,i 可以使用超純水等之漂洗液而漂洗陣列基 板。 j匕夕卜,^ 了 ^ | -、ί由於要求而鈍化感應放射線化合物,因此, 可以在具有圖案化有機保護膜之陣列基板之整個面,照射 /:丨生放射線’或者是同時於這個或照射後,加熱有機保護 膜作為加熱方法係列舉例如在加熱板或烤箱内來加熱陣 列基板之方法。加熱溫度係通常是100〜300。。。 在本I明之主動矩陣基板之製造方法,㈣是在陣列 基板上形成有機保護膜後,通常是在對於有機保護膜進行 進仃树如之父聯反應。對於形成在陣列基板 上之有機保護膜來進行$胪 适仃又%之方法係可以配合於使用之交 聯劑之種類而適當地進行選擇,但是,通常藉由加熱而進 ^、、、係可以使用例如加熱板、烤箱等而進行。加熱溫 度係最好是180〜250°r 4無士 250 C,加熱時間係可以配合於有機保護 \大j厚度、使用機器等而適當地進行選擇。例如在 使用加熱板之狀態下,崙士 〜卜取好疋5〜60分鐘,在使用烤箱之 狀態下,最好是30〜90分鐘。 碎相之 加熱係可以由於要求而逸4 〆 戈&向進仃於虱、氬、氦、氖、氙、 氪專之惰性氣體氣氛下。 上在有機㈣膜形成料接職之孔㈣之後,於有機 保濩膜上,例如藉著濺鍍法 〜凤由1TO ( Indium Tin2232-943 8-PF 200848899 The development residue on the substrate, the back surface of the substrate, and the end of the substrate is removed as required. Because Jf, i can rinse the array substrate with a rinse solution such as ultrapure water. j 匕 卜 , ^ ^ ^ - - , ί 由于 感应 感应 感应 感应 感应 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应 感应After the irradiation, the organic protective film is heated as a heating method, for example, in a heating plate or an oven to heat the array substrate. The heating temperature is usually 100 to 300. . . In the manufacturing method of the active matrix substrate of the present invention, (4), after the organic protective film is formed on the array substrate, the eucalyptus reaction is usually performed on the organic protective film. The method of performing the organic protective film formed on the array substrate to perform the appropriate method can be appropriately selected in accordance with the type of the crosslinking agent to be used. However, it is usually heated by heating. It can be carried out using, for example, a hot plate, an oven, or the like. The heating temperature is preferably 180 to 250 ° r 4 without a 250 C, and the heating time can be appropriately selected in accordance with the organic protection, the thickness of the large j, the use of a machine, and the like. For example, in the state where the heating plate is used, it is preferably 5 to 60 minutes in the state of using the oven, and preferably 30 to 90 minutes in the state of using the oven. The heating system of the broken phase can be used in the inert gas atmosphere of helium, argon, neon, xenon, krypton and xenon. After the hole in the organic (four) film forming material (4), on the organic film, for example by sputtering, ~1 by Indium Tin

Oxide ··氧化銦錫)所構成蚩 ^ A 风之旦素電極,進行圖案化,透過 有機保濩膜之接觸孔而連接rp卩了 恁鞍之汲極電極和晝素電極。Oxide ··Indium Tin Oxide 蚩 A A 风 风 风 A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A

2232-943 8-PF 32 200848899 在此時,藉由構成晝素電極之I 丁〇而n 士 ^ ^ , Μ ώ ^ ^ 同¥形成電極圖案。 …、後猎由形成配向膜,施行摩 得到要求之主動矩陣基板。 專之配向處理’而 本發明之平面顯.示裝置,其特徵在於. 主動矩陣基板所構成。本發明之平、壯匕括本么月之 板所構成,因此,成為ρ入 ”、、不炎置係使用該基 成為長奇命、低消耗電 呈良好的平面顯示裝置。作為 门、 ’ 舉主動矩陣型液晶顯示裝置置之具體例係列 (EL)顯示裝置等。 1陣型有機電致發光 狀二=::二型液晶顯示裝置係由液晶材料或薄膜 2 =住於其間而進行對向配置之-對基板所構成, 成為精由本發明之主動矩陣基板而構成-對基板中之某 ==顯示裝置。作為對於主動矩陣基板來進行 置之基板(在以下,稱為「對向基板」。)係列舉 例如彩色濾光片基板、微透鏡基板等。 此外’作為藉由主動矩陣基板和彩色遽光片基板所構 成之液晶顯示裝置之變化例係列舉在主動矩陣基板之查素 電極上呈直接地設置彩色據光片材料層而在對向基板並益 設置彩色濾光片之形態之液晶顯示裝置、或者是藉由具有 導電性之彩色遽光片材料而形成主動矩陣基板之畫素電極 且在對向基板並無設置彩色濾光片之形態之液晶顯示裝置 等。 在圖2,暴貝示使用本發明之主動矩陣基板而製作所得 到之主動矩陣型液晶顯示裝置之某一形態之俯視圖,在圖2232-943 8-PF 32 200848899 At this time, an electrode pattern is formed by I 〇 ^ ^ ^ , Μ ώ ^ ^ constituting a halogen electrode. ..., after hunting, the active matrix substrate is obtained by forming an alignment film and performing the required process. The invention relates to a planar display device of the present invention, characterized in that it is composed of an active matrix substrate. The flat and sturdy slab of the present invention is composed of a plate of the moon, and therefore, it is a flat display device which is used for the use of the base and has a low life and low power consumption. The active matrix type liquid crystal display device is set as a specific example series (EL) display device, etc. One-line type organic electroluminescence type II =:: The two-type liquid crystal display device is made by liquid crystal material or film 2 = lived therebetween In the arrangement of the substrate, the substrate is formed by the active matrix substrate of the present invention, and the substrate is mounted on the active matrix substrate (hereinafter referred to as "opposing substrate". The series includes, for example, a color filter substrate, a microlens substrate, and the like. In addition, as a series of variations of the liquid crystal display device composed of the active matrix substrate and the color slab substrate, the color ray material layer is directly disposed on the aligning electrode of the active matrix substrate on the opposite substrate. A liquid crystal display device in which a color filter is provided, or a pixel electrode of an active matrix substrate formed by a conductive color light-emitting sheet material, and a color filter is not provided on the opposite substrate Liquid crystal display device, etc. In Fig. 2, a top view of a certain form of the active matrix type liquid crystal display device obtained by using the active matrix substrate of the present invention is shown.

2232-9438-PF 33 200848899 3,顯示其X—Y剖面圖。在 八^ 匕枯畫素電極202之 主動矩陣基板1 〇 1和包括對a 1ΛΟ 對向電極206之彩色濾光片基板 1 〇2係夾住液晶層丨丨0而進 您仃對向配置,各個晝素電極2022232-9438-PF 33 200848899 3, showing its X-Y profile. The active matrix substrate 1 〇 1 of the ^ 画 画 电极 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 202 Each halogen electrode 202

和對向電極206之對向部分係、成為畫素。在由晝素所構成 之顯示區域之外圍,設置密封材1Q3,在顯示區域和密封 材103間之區域,存在電極圖案1〇5。此外,在彩色渡光 片基板102,於具有黑色矩陣2〇8之彩色據光片層2〇7^ , 設置對向電極206,在其上面,設置配向膜⑴。在主動矩 車基板1 01於基板上,供應驅動作為開關元件之01 之閘極訊號的間極訊號線2〇3以及供應源極訊號至tft2〇i 的源極訊號線m仙互地直交㈣行設置。在兩訊號線 之交差部附近,設置TFT2(U,在其上面,透過有機保護膜 104而設置晝素電極202,使得一部分重疊於兩訊號線。此 外’在有機保濩膜104之接觸孔(並未圖示),連接畫素 電極2 02和TFT2 01之汲極電極。此外,在有機保護膜J 4 上’呈對向地配置配向膜111。 另一方面,閘極訊號線203以及源極訊號線204係超 過晝框區域而進行延出形成,可以透過設置在其外側之端 子區域之輸入端子108而在閘極訊號線203輸入TFT201驅 動用之訊號電壓,在源極訊號線2 0 4,輸入顯示資料之訊 號電壓。電極圖案1 〇5係形成在有機保護膜丨04之外圍區 域上’還延長形成至端子區域為止,輸入來自驅動電路之 訊號。以上之液晶顯示裝置係可以按照習知之方法、例如 日本特開2 0 0 3 — 0 〇 5 21 5號公報所述之方法而進行製造。 2232-943 8-PF 34 200848899 ⑽Γ之主動矩陣型有機EL 11示裝置係在本發明之主 動矩陣基板上配刻你涵 % 4 & /3义主 孜上配列矩陣而形成之各 之有機£L·元件和用吃仏 一,主v 1個 TFT。 用乂驅動該有機叽元件之至少2個之 有機£L元件係並益特 …、特别限制,列舉例如在成為陽極之 電洞庄入電極和成為陰極 電子庄入電極間來形成電洞於 送層及發光材料層的構造 成電刃輪 極和電子注入電極間來幵m “)、在電洞注入電 1 才門末形成發光材料層和電子輸送層的構 b構造)、或者是在電洞注入電極和電 籌And the opposing portion of the counter electrode 206 is a pixel. On the periphery of the display region composed of halogen, a sealing material 1Q3 is provided, and an electrode pattern 1〇5 is present in a region between the display region and the sealing member 103. Further, on the color light-receiving substrate 102, a counter electrode 206 is provided on the color light-receiving sheet layer 2B having a black matrix 2, and an alignment film (1) is provided thereon. On the active motor vehicle substrate 101 on the substrate, the inter-pole signal line 2〇3 driving the gate signal as the switching element 01 and the source signal line supplying the source signal to tft2〇i are directly crossed (4) Line settings. In the vicinity of the intersection of the two signal lines, a TFT 2 (U is disposed thereon, and the halogen electrode 202 is disposed through the organic protective film 104 so that a portion thereof overlaps the two signal lines. Further, a contact hole in the organic film 104 ( Not shown), the pixel electrode of the pixel electrode 022 and the TFT 209 is connected. Further, the alignment film 111 is disposed on the organic protective film J 4 in the opposite direction. On the other hand, the gate signal line 203 and the source The pole signal line 204 is formed to extend beyond the frame area, and the signal voltage for driving the TFT 201 can be input to the gate signal line 203 through the input terminal 108 of the terminal area provided outside, and the source signal line 20 0 is input to the source signal line 20 4. Input the signal voltage of the display data. The electrode pattern 1 〇5 is formed on the peripheral region of the organic protective film 丨04, and is further extended to the terminal region, and the signal from the driving circuit is input. The above liquid crystal display device can be A conventional method, for example, is manufactured by the method described in Japanese Patent Laid-Open Publication No. 2000-00-52 No. 5 215. 2232-943 8-PF 34 200848899 (10) Active Matrix Organic EL 11 Display The organic matrix substrate formed on the active matrix substrate of the present invention is formed by arranging the matrix of the quaternary main body and the matrix of the matrix, and the main v1 TFTs are used for driving. At least two organic LL elements of the organic germanium element are particularly limited, and for example, a hole is formed between the electrode serving as the anode and the cathode is formed into the electrode to form a hole in the layer and emit light. The material layer is configured to be between the electric blade wheel and the electron injecting electrode to "m"), to form a structure of the luminescent material layer and the electron transporting layer at the end of the hole injection, or to implant the electrode in the hole. And fundraising

==洞輸送層和發光材料層及電子輸送層的構造 (構每)荨。即使是在任何一種構造之狀態下,有機EL 兀件係也以所謂使得由電润注入電極(陽極)注入之電洞 和由電子注入電極(陰極) 層和電洞(或電子)輸〇之^ 再結合於發光材料 l丄 幻輸达層之界面以及發光材料層内而進 订舍光之原理,來進行啟動。 :圖4,顯示本發明之有機_示裝置之有機此元 :之里之構造例。圖4所示之有機el元件係由主動矩陣 基板[包含晝素電極來作為下部電極層(陽極)]301、發光 材料層302以及上部電極層(陰極 作為最外層係設置封裝膜3G4。作為有機&顯示裝置之一 =部Γ構造係^作為^對於至幻個之有機EL元 Γ 件之m,需要至少2個、也就是《電 :體=寫入電晶體’但是’在圖4之構造例,省略兩電晶== The structure of the hole transport layer and the luminescent material layer and the electron transport layer (structure). Even in any state of construction, the organic EL element is driven by a so-called hole injected by an electro-injection electrode (anode) and by an electron injection electrode (cathode) layer and a hole (or electron). ^ The combination is further combined with the principle of the light-emitting material 丄 输 输 输 layer and the luminescent material layer to customize the light to start. Fig. 4 is a view showing an example of the structure of the organic unit of the present invention. The organic EL element shown in FIG. 4 is composed of an active matrix substrate [including a halogen electrode as a lower electrode layer (anode)] 301, a light-emitting material layer 302, and an upper electrode layer (the cathode is provided as an outermost layer of the package film 3G4. One of the & display devices = part of the structure ^ as ^ for the magical EL element element, need at least 2, that is, "electric: body = write transistor 'but ' in Figure 4 Construction example, omitting two electron crystals

體。些電晶體係存在於本發明之主動矩陣基板。 2232-943 8-PF 35 200848899 在本ι明之主動矩陣基板,連接作為陽極之畫素電極 ^ 及極電極。在圖5,顯,示本發明之主動矩陣基板 電路之某例子,在該電路,藉由依序地施力σ於連接 在水平驅動電路之掃描電極401之電壓,而使得TFT4〇2(寫 入電曰曰體)成為導通狀態,配合於來自連接在垂直驅動電 資料電極4 0 3之顯示訊號之電荷量係儲存於電容器 4〇4藉由儲存於電容器404之電荷量而啟動TFT405 (驅body. These electromorphic systems are present in the active matrix substrate of the present invention. 2232-943 8-PF 35 200848899 In the active matrix substrate of this ι明, the pixel electrode ^ and the electrode as the anode are connected. In Fig. 5, there is shown an example of the active matrix substrate circuit of the present invention, in which the TFT 4〇2 is written by sequentially applying a force σ to the voltage of the scan electrode 401 connected to the horizontal drive circuit. The electric discharge body is turned on, and the charge amount from the display signal connected to the vertical drive electric data electrode 403 is stored in the capacitor 4〇4 to activate the TFT 405 by the amount of charge stored in the capacitor 404.

動電晶體)’在有機EL元件權,供應電流而點亮有機肛 =件。在掃描電極401 —直到施加電壓為止之間,保持該 亮燈狀態。以上之有機EL顯示裝置係可以按照習知之^ 法、例如日本特開2002 — 333846號公報所述之方法而 製造。 订 【實施例】 在以下,列舉實施例而更加詳細地說明本發明,但是, 本發明係並無由於這些實施例而受到任何限定。 製造例1 (環狀浠烴系聚合物之製造) 將60重量份之8—羧基四環[4. 4· 〇· ρ,5 Γ,1。]十 二—3—烯烴、4〇重量份之N—苯基—(5—原疲烷= —二綾基酿亞胺)、2.8重量份之1>5—己二烯、〇 〇5 ’重 量份之(1,3—二米基咪唑烷基一2~又) 人)〖二裱己基膦) 苄叉釕二氯化物以及400重量份之二乙橋7 _ Q邱g一醇乙基甲基 鱗’放入至氮取代之耐壓玻璃反應器,在攪拌下,於8〇^土 進行2小時之聚合反應,得到含有開環復分解聚合物丨八之 聚合反應溶液。聚合轉化率係99· 9%以上。兮取人tThe electro-optical crystal) is in the right of the organic EL element, and supplies current to illuminate the organic anal = piece. The lighting state is maintained between the scanning electrodes 401 until the voltage is applied. The above organic EL display device can be produced by a method described in, for example, Japanese Laid-Open Patent Publication No. 2002-333846. [Embodiment] The present invention will be described in more detail below by way of examples, but the present invention is not limited by these examples. Production Example 1 (Production of cyclic anthraquinone-based polymer) 60 parts by weight of 8-carboxytetracyclic [4. 4 · 〇 · ρ, 5 Γ, 1 was used. ] 12-3 olefin, 4 〇 parts by weight of N-phenyl-(5-formaldehyde = quinone-bromoimine), 2.8 parts by weight of 1> 5-hexadiene, 〇〇 5 'weight (1,3-di-m-imidazolidine- 2~) human) 〖dihexylphosphine) benzylidene dichloride and 400 parts by weight of di-branched 7 _ Q Qiu g-alcohol ethyl The base scale was placed in a nitrogen-substituted pressure-resistant glass reactor, and polymerization was carried out for 2 hours under stirring to obtain a polymerization reaction solution containing a ring-opening metathesis polymer. The polymerization conversion ratio was 99.9% or more. Take people t

硪來合物1A 2232-9438-PF 36 200848899 之重量平均分子量係3, _,數平均分子量係U 量分布係1. 68。 刀子 接著,作為氫添加觸媒係雙(三環己基麟) 烯釕二氣化物〇. 1重量份,加入 L丞乙 刀八主♦合反應溶液,以4Mp :塗力’溶存氫5小時’在進行氫添加反應後,添 碳粉末1重量份’加入至高壓鋼’進行授摔,同時' ,以她之壓力,溶存氫3小時。接著,取出溶液^ 由孔控〇·2”之氟樹脂製過濾器而進行過渡,分離、、舌: 碳,得到含有開環復分解聚合物1A之氫化物】 六 反應溶液476重量份。過濾係可以無遲滯地進行。::力: 到之含有氫化* 1B之氫添加反應溶液之固態成分濃度: 2〇·6重,氫化物1B之良品率係9δ ι重量份。得 氫化物1B之重量平均分子量係4, 43。,數平均分:: 2,570,分子量分布係h72。氫化率係99.9%。 里“ 此外,聚合物1A及氫化物1B之重量 s ^刀子卑和數 平均分子量係以四氣化吱喃,作為溶離液,使用凝膠參透 色譜儀(TOSOH公司製、HLC_ 802〇)而求 …爽 扣成為聚里成- 烯換算分子量。 〃戍一 藉由旋轉式氣化器而濃縮得到之氫化 . 1Β之氮添加 反應;谷液’調正固態成分濃度,成為3 5重旦 里里%,得到氫化 物1C (具有羧基來作為極性基之環狀烯烴 、 ’、來合物)之溶 液。在濃縮之前後,於良品率、氫化物之重旦 里平均分子量、 數平均分子量及分子量分布,並無發生變化。 [實施例1] 2232-943 8-PF 37 200848899 將在製造例1所得到之含有氳化物1(:之環狀烯烴系聚 合物溶液(固態成分濃度35重量% )之1〇〇重量份、作為 交聯劑之具有脂環式構造之多官能環氧化合物[micel化 學工業公司製、EHPE31 50(製品名稱)、分子量大約2, 7〇〇、 環氧基數15]之25重量份、作為感應放射線化合物之 —三(2,5—二甲基一4—羥基苯基)—3一苯基丙烷(1莫 爾)和1,2 —奈醌二疊氮基一 5 一磺酸氯化物(2· 5莫爾) 之縮合物之25重量份、作為老化防止劑之(一 五甲基-4—哌啶基/十三烷基)—",以一丁烷四羧酸 酉曰之5重1份、作為接合助劑之γ 一環氧丙氧基丙基三甲 氧基矽烷之5重量份、以及矽酮系界面活性劑[信越化學工 =公司製、ΚΡ341 (製品名稱)]之〇.〇5重量份予以混合, 逛添加二乙烯乙二醇乙基甲基醚之92重量份和Ν一甲基一 2…比錢調之8重量份’進行混合及攪拌。混合物係在$ '刀4里以内’成為均自之溶液。藉由孔徑0· 45 " m之聚四氟 乙烯製之過濾器而過濾該溶液,調製感應放射線性樹脂組 成物1D。 在玻璃基材[CORNING公司製、CORNING 1 737 (製品名 私)]之上,使用濺鍍裝置,形成鉻200nm之膜厚,藉由光 U心而進行圖案化,形成閘極電極、閘極訊號線和閘極端 子=接著,藉由CVD裝置而覆蓋閘極電極和閘極配線, 連灵也成形45Onm厚度之成為閘極絕緣膜之矽氮化物膜、 25 Onm厚度之成為半導體層之a_ ^層以及μ⑽厚度之成 為歐姆接點層之n+Si ^,對於n+Si層和以層進行The weight average molecular weight of the ruthenium compound 1A 2232-9438-PF 36 200848899 is 3, _, and the number average molecular weight is U. Next, as a hydrogen-added catalyst, bis(tricyclohexyl phenyl) ene quinone dihydrate 〇. 1 part by weight, add L 丞 刀 knife to the main reaction solution, to 4Mp: coating force 'dissolved hydrogen for 5 hours' After the hydrogen addition reaction, 1 part by weight of the carbon powder was added to the high-pressure steel to be dropped, and at the same time, hydrogen was dissolved for 3 hours. Next, the solution was taken out and filtered by a fluororesin filter made of a pore-controlled 〇2", and the carbon was separated from the tongue to obtain a hydride containing the ring-opening metathesis polymer 1A. 476 parts by weight of a six-reaction solution. It can be carried out without delay.:: Force: The concentration of the solid component of the hydrogen addition reaction solution containing hydrogenation * 1B: 2 〇 · 6 weight, the yield of hydride 1B is 9 δ ι by weight. Hydride 1B The weight average molecular weight is 4, 43., the number average score is: 2,570, and the molecular weight distribution is h72. The hydrogenation rate is 99.9%. In addition, the weight of the polymer 1A and the hydride 1B s ^ the knife and the average molecular weight are As a solution, a gel gas permeation chromatograph (manufactured by TOSOH Co., Ltd., HLC_802) was used as a solution to obtain a molecular weight.氢化A hydrogenation obtained by concentration by a rotary gasifier. The nitrogen addition reaction of 1Β; the solution of the gluten solution is adjusted to the concentration of the solid component, and the hydride is 1% (the carboxyl group is obtained as the polar group). a solution of a cyclic olefin, ', a complex). After the concentration, the average molecular weight, the number average molecular weight, and the molecular weight distribution in the yield of the hydride, the weight of the hydride did not change. [Example 1] 2232-943 8-PF 37 200848899 1 part by weight of a sulfonated compound 1 solution (solid content concentration: 35 wt%) obtained in Production Example 1 As a crosslinking agent, 25 parts by weight of a polyfunctional epoxy compound having an alicyclic structure [manufactured by Mic Chemical Co., Ltd., EHPE31 50 (product name), molecular weight of about 2, 7 〇〇, epoxy group 15], as induction The radioactive compound - tris(2,5-dimethyl-4-hydroxyphenyl)-3-phenylpropane (1 mol) and 1,2 -naphthyldiazide-5-sulfonic acid chloride ( 25 parts by weight of a condensate of 2·5 moles, as a aging preventive agent (monopentamethyl-4piperidinyl/tridecyl)-" 5 parts by weight, 5 parts by weight of γ-glycidoxypropyltrimethoxydecane as a bonding aid, and an anthrone-based surfactant [Shin-Etsu Chemical Co., Ltd., ΚΡ341 (product name)] 〇.〇5 parts by weight, add 92 parts by weight of diethylene glycol ethyl methyl ether and Ν一 methyl one 2... The mixture is mixed and stirred. The mixture is made into a solution from within the 'knife 4'. The solution is filtered by a filter made of polytetrafluoroethylene with a pore size of 0·45 " m to modulate the induced radiation. Resin composition 1D. A glass substrate (CORNING 1 737, manufactured by CORNING Co., Ltd.) was used to form a film thickness of 200 nm in chromium using a sputtering apparatus, and patterned by light U core to form a gate. Electrode, gate signal line and gate terminal = Next, the gate electrode and the gate wiring are covered by a CVD device, and Lian Ling also forms a tantalum nitride film having a thickness of 45 nm and a thickness of 25 nm. The a_^ layer of the semiconductor layer and the thickness of μ(10) become the n+Si^ of the ohmic contact layer, for the n+Si layer and the layer

2232-9438-PF 38 200848899 圖案化而成為島狀。此外,在閘極絕緣膜和n+Si層之上, 藉由濺鍍裝置而形成鉻2〇 〇nm之膜厚,藉由光微影而形成 源極電極、源極訊號線、汲極電極和資料端子部,除去源 極電極和汲極電極間之不必要之n+Si層,形成後通道(非 結晶質矽膜)。然後,在231 ’於濃度l〇ppm之臭氧水, /文’貝彳于到之陣列基板3分鐘,在TFT之後通道部之表面, 形成厚度3nm之矽氧化層。 接著,將陣列基板放入至包括加熱板之曱矽烷基化處 理至,在對於處理室内進行除氣之後,導入六甲基二矽氨 烷,來作為甲矽烷基化劑,在5〇。〇均勻地擴散六甲基二矽 氰烷之瘵氣至處理室内之後,於85。〇,藉由加熱板而加熱 陣列基板,進行丨分鐘之甲矽烷基化。接著,藉由氮而取 代處理至内之六甲基二石夕氨烧,冷卻至室溫為止,包含I?? 之非結晶質矽膜之表面,得到表面整體進行甲矽烷基化(三 曱基曱矽烷基化)之陣列基板。 在彳寸到之表面進行曱矽烷基化之陣列基板呈旋轉地塗 敷蝻述之感應放射線性樹脂組成物1D之後,使用加熱板, 在90C,進行2分鐘之預烘烤,形成膜厚2.5#m之樹脂 膜。在'亥樹脂膜,透㉟10#nixl〇/zm之孔圖案之遮罩而在 4〇秒鐘之空氣中,照射365nm之光強度成為5mW/cm2之紫 卜、、良接著在使用〇 · 4重量%之四曱基銨氫氧化物水溶 液而在25°c進行90秒鐘之顯影處理之後,在以超純水進 行30移鐘之漂洗而形成接觸孔之圖案時,得到殘膜率90 %以上之良好之圖案。此外,還使用烤箱,進行在230 Ό2232-9438-PF 38 200848899 Patterned to become an island. Further, on the gate insulating film and the n+Si layer, a film thickness of 2 nm is formed by a sputtering device, and a source electrode, a source signal line, and a drain electrode are formed by photolithography. And the data terminal portion, the unnecessary n + Si layer between the source electrode and the drain electrode is removed to form a rear channel (amorphous ruthenium film). Then, at 231 Å in an ozone water having a concentration of 1 〇 ppm, the substrate was placed on the array substrate for 3 minutes, and a ruthenium oxide layer having a thickness of 3 nm was formed on the surface of the channel portion after the TFT. Next, the array substrate was placed in a hydrazine alkylation treatment including a heating plate until hexamethyldioxane was introduced as a formazan alkylating agent at 5 Torr after degassing the treatment chamber. 〇 After uniformly diffusing helium gas of hexamethyldioxane to the treatment chamber, at 85. Thereafter, the array substrate was heated by heating the plate to carry out the oxime alkylation for a minute. Next, the surface of the amorphous ruthenium film containing I?? was replaced by nitrogen, and the surface of the amorphous ruthenium film containing I?? was cooled to room temperature, and the entire surface was subjected to methylation. An array substrate based on alkylation). The array substrate on which the oxime alkylation was applied to the surface was spin-coated with the inductive radiation resin composition 1D described later, and then pre-baked at 90 C for 2 minutes using a hot plate to form a film thickness of 2.5. #m的树脂膜. In the 'Hei resin film, through the mask of the hole pattern of 3510#nixl〇/zm, the light intensity of 365nm is 5mW/cm2 in the air of 4〇 second, and then the 〇·4 is used. After a development process of 90% by weight of a tetradecyl ammonium hydroxide aqueous solution at 25 ° C for 90 seconds, a residual film rate of 90% was obtained when a pattern of contact holes was formed by rinsing with ultra-pure water for 30 minutes. The above good pattern. Also, use the oven for 230 Ό

2232-943 8-PF 39 200848899 加熱15分鐘之預供烤(交聯處理)。 藉由將形成有機保護臈之陣列基板,移送至真空槽, ==混合氣體(體積比-4)來作為_氣體, ,土 · Pa ’ DC輸出成為400W,通過遮罩,進行β 錢鐘,而形$鹿;戸 導電声之I I Q系之非結晶質透明 基板。θ 電極^來接觸到汲極電極,得到主動矩陣 在件到之主動矩陣基板之源極電極和汲極電極之間, 施加电壓2°V ’改變施加於閘極電極之電壓,成為_2〇〜 3』0卜使用手動探測器和半導體參數分析儀(Agilent公司 ^ )而’則定/;IL動於源極電極和汲極電極間之電流。 將結果顯示於圖6。漏電流係lxl〇,々m2,臨限值電壓 係4V 〇 士在主動矩陣基板放置於阶、90獅之氣氛中2〇〇小 日守之後’進行相同之測定。漏電流係Μη/。〆,臨限 值電壓係4V,並無發生變化。 [實施例2 ] 除了使用uv臭氧產生裝置[ΗΙΜΑχ公司製、m〇deli44a (商ππ名稱)]來取代由於和臭氧水之接觸所造成之氧化, 在υ 3大約20體積%之氧之空氣中,以強度5W/⑽2,對 於得到之陣列基板,照射254波長之紫外線5分鐘,在 後通道部之表面,形成厚度3nm之石夕氧化層,&且,在陣 列基板壬旋轉地塗敷丙烯樹脂溶液[jSR公司製、〇ptmer (商扣名%)],來取代感應放射線性樹脂組成物u以外,2232-943 8-PF 39 200848899 Preheated for 15 minutes (cross-linking treatment). By transferring the array substrate forming the organic protective crucible to the vacuum chamber, == mixed gas (volume ratio -4) is used as the gas, and the earth·Pa 'DC output is 400 W, and the mask is used to carry out the β money clock. And the shape of the deer; the non-crystalline transparent substrate of the IIQ system of conductive sound. The θ electrode ^ contacts the drain electrode, and the active matrix is placed between the source electrode and the drain electrode of the active matrix substrate, and a voltage of 2°V′ is applied to change the voltage applied to the gate electrode to become _2〇. ~ 3 』 0 Bu using a manual detector and a semiconductor parameter analyzer (Agilent company ^) and 'then /; IL moving between the source electrode and the drain electrode. The results are shown in Figure 6. The leakage current is lxl〇, 々m2, and the threshold voltage is 4V. The same measurement is performed after the active matrix substrate is placed in the atmosphere of the lion and 90 s. The leakage current is Μη/. 〆, the threshold voltage is 4V, and there is no change. [Example 2] In addition to the use of a uv ozone generating device [manufactured by Nippon Co., Ltd., m〇deli 44a (commercial ππ name)] to replace the oxidation due to contact with ozone water, in the air of about 20% by volume of oxygen in υ3 With an intensity of 5 W/(10) 2 , for the obtained array substrate, ultraviolet rays of 254 wavelengths were irradiated for 5 minutes, and on the surface of the rear channel portion, a stone oxide layer having a thickness of 3 nm was formed, and propylene was spin-coated on the array substrate. Resin solution [manufactured by JSR Corporation, 〇ptmer (trade name)), in place of the inductive radiation resin composition u,

2232-9438-PF 200848899 其餘係相同於實施例!而製作主動矩陣基板,進行評價。 在製作該基板之即刻後之漏電流係2xl{rUA/cm2,臨 限值轉係3V。在放置謂之氣氛中2〇〇小 曰寸後之漏電流择1 γ 1 η_ 12 a / 2 柯电*係丄χΐϋ A/cm,臨限值電壓係2· 5V。 [實施例3 ] 除了使用電漿產生裝置[大和科學公司製、γΑρ51〇 (商 品名稱)]來取代由於和臭氧水之接觸所造成之氧化,在大 耽壓,以電漿輸出30W/cm2,來產生包含20體積%之氧之 電漿,維持在其中得到之陣列基板3分鐘,在後通道部之 表面,形成厚度2ηιιι之矽氧化層,並且,在陣列基板,呈 方疋轉地塗敷聚醯亞胺樹脂溶液[T〇RAY公司製、ph〇t〇neece (商品名稱)],來取代感應放射線性樹脂組成物ID以外, 其餘係相同於實施例丨而製作主動矩陣基板,進行評價。 在製作該基板之即刻後之漏電流係5xi〇-13A/cm2,臨 限值電壓係3V。在放置於6〇π、9〇%RH之氣氛中2〇〇小 日π後之漏電流係2x1 〇-12A/ cm2,臨限值電壓係2V。 [比較例1 ] 除了並無對於形成在陣列基板之TFT之後通道部之表 面進行氧化及甲矽烷基化且轉移至在該陣列基板上呈旋轉 地塗敷感應放射線性樹脂組成物1 D之製程以外,其餘係相 同於實施例1而製作主動矩陣基板,進行評價。 在製作該基板之即刻後之漏電流係2xi〇-MA/cm2,臨 限值電壓係2V。在放置於6(rc、90%RH之氣氛中2〇〇小 時後之漏電流係5xlO_8A/ cm2,臨限值電壓係一2V。2232-9438-PF 200848899 The rest are the same as the embodiment! The active matrix substrate was fabricated and evaluated. Immediately after the substrate was fabricated, the leakage current was 2xl{rUA/cm2, and the threshold was converted to 3V. In the atmosphere of the placement, the leakage current after 2 inches is selected as 1 γ 1 η_ 12 a / 2 Ke Electric * system 丄χΐϋ A / cm, the threshold voltage is 2 · 5V. [Example 3] In addition to using a plasma generating device [manufactured by Daiwa Scientific Co., Ltd., γΑρ51〇 (trade name)] to replace the oxidation caused by contact with ozone water, at a large pressure, the plasma output was 30 W/cm 2 , To produce a plasma containing 20% by volume of oxygen, maintaining the array substrate obtained therein for 3 minutes, forming a tantalum oxide layer having a thickness of 2 ηι on the surface of the rear channel portion, and coating the substrate on the array substrate. The active matrix substrate was produced and evaluated in the same manner as in the example except that the polyimide resin solution (manufactured by T〇RAY Co., Ltd., ph〇t〇neece (trade name)) was used instead of the inductive radiation resin composition ID. . Immediately after the substrate was fabricated, the leakage current was 5 xi 〇 13 A/cm 2 and the threshold voltage was 3 V. The leakage current after 2 〇〇 π in an atmosphere of 6 〇 π, 9 〇 % RH is 2x1 〇 -12 A/cm 2 , and the threshold voltage is 2 V. [Comparative Example 1] A process of performing oxidation and mercaptanization on the surface of the channel portion after the TFT formed on the array substrate and transferring to the inductively-radioactive resin composition 1 D on the array substrate The active matrix substrate was produced in the same manner as in Example 1 except that the evaluation was carried out. Immediately after the substrate was fabricated, the leakage current was 2 xi 〇 - MA / cm 2 and the threshold voltage was 2 V. The leakage current after 2 hours in an atmosphere of 6 (rc, 90% RH) is 5x10_8A/cm2, and the threshold voltage is 2V.

2232-943 8-PF 41 200848899 [比較例2 ] 除了並無對於 面進行氧化及甲心:嶋之㈣之後通道部之表 地塗敷丙嫌并、土且轉移至在該陣列基板上呈旋轉 之製程以公^製、⑽職(商品名稱)] & '、、糸相同於貫施例2而製作主動矩陣基 板’相同於實施例!而進行評價。 車基 在製作該基板之即刻後之漏電流係2χΐ〇_6Α/^2,並無 啟動成為主動矩陣基板。 [比較例3 ] 除了並無對於形成在陣列基板之TFT之後通道部之表 面進行氧化及甲矽烷基化且轉移至在該陣列基板上呈旋轉 也k敷χκ酉监亞胺樹脂溶液[tqray公司製、Photoneece (商 口口名稱)]之製程以外,其餘係相同於實施例3而製作主動 矩陣基板,相同於實施例1而進行評價。 在製作該基板之即刻後之漏電流係5x1 (T5A/ cm2,並無 啟動成為主動矩陣基板。 將實施例1〜3及比較例1〜3之結果,顯示於表1。 2232-943 8-PF 42 200848899 【表1】 實施例1 實施例2 實施例3 比較例1 比較例2 比較例3 後通道部之表面 有無氧化 有 有 有 無 無 無 氧化之方法 和臭氧水之接觸 〇 — — — — — 在空氣中之紫外線照射 — 〇 — — — — 曝露至包含氧之電漿中之曝露 — — 〇 — — — 後通道部之表面 有無曱矽烷基化 有 有 有 無 無 無 曱矽烷基化之方法 三曱基曱矽烷基化 〇 〇 〇 — — — 有機保護膜 含極性基環狀烯烴系聚合物之交聯物 〇 — — — — — 丙烯樹脂 — 〇 — — — — 聚醯亞胺樹脂 — — 〇 — — — 初期值 漏電流(A/cm ) lxl 0'13 2x10'13 5x10-13 2xl0-11 2x10-8 2x10-5 判定 優 優 良 可 不可 不可 臨限值電壓(V) 4 3 3 2 — — 判定 優 良 良 可 — — 在 60°C、90%RH、200 小時後 漏電流(A/cm2) 1x10-丨3 lxlO'12 2x10"12 5x10_8 — — 判定 優 良 可 可 — — 臨限值電壓(V) 4 2.5 2 -2 一 — 判定 優 良 良 可 — — 由表1而得知:對於在玻璃基材上形成T F T之陣列基 板之後通道部之表面來進行氧化及曱矽烷基化且在其上面 形成作為具有極性基之環狀烯烴系聚合物之交聯物之有機 保護膜之實施例1之主動矩陣基板、以及有機保護膜分別 成為丙烯樹脂和聚醯亞胺樹脂之實施例2及實施例3之各 個主動矩陣基板係即使是在高溫多濕之環境下,放置長時 間之後,也具有實用之良好性能。 另一方面,得知並無進行陣列基板之後通道部表面之 432232-943 8-PF 41 200848899 [Comparative Example 2] Except that there is no oxidization on the surface and the core: ( (4), the surface of the channel portion is coated with the smear, and the soil is transferred to the substrate. The process was evaluated in the same manner as in the example, in which the active matrix substrate was produced in the same manner as in Example 2, and the (10) job (product name)] & The vehicle base has a leakage current of 2χΐ〇_6Α/^2 immediately after the substrate is fabricated, and does not start up as an active matrix substrate. [Comparative Example 3] Except that the surface of the channel portion after the TFT formed on the array substrate was not oxidized and mercaptoalkylated and transferred to the substrate on the array substrate, the yttrium-imide resin solution was also applied. The active matrix substrate was produced in the same manner as in Example 3 except that the process of the method and the Photoneece (trade name) was carried out, and the evaluation was performed in the same manner as in the first embodiment. Immediately after the substrate was fabricated, the leakage current was 5x1 (T5A/cm2, and the active matrix substrate was not activated. The results of Examples 1 to 3 and Comparative Examples 1 to 3 are shown in Table 1. 2232-943 8- PF 42 200848899 [Table 1] Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Whether or not the surface of the rear channel portion is oxidized with or without oxidation and contact with ozone water — — — — UV irradiation in the air — 〇 — — — Exposure to plasma containing oxygen — 〇 — — — The surface of the rear channel is free of oxime alkylation. Trimethyl hydrazine alkylated fluorene — — organic protective film containing a polar group of cyclic olefin polymer crosslinked 〇 — — — — propylene resin — 〇 — — — — polyimine resin — 〇——— — Initial value leakage current (A/cm) lxl 0'13 2x10'13 5x10-13 2xl0-11 2x10-8 2x10-5 Good or bad (V) 4 3 3 2 — — Judging good good — — Leakage current (A/cm2) at 60 ° C, 90% RH, 200 hours 1x10-丨3 lxlO'12 2x10"12 5x10_8 — — Judging good cocoa — — Threshold voltage (V) 4 2.5 2 -2 a — Judging good and good — It is known from Table 1 that the surface of the channel portion is oxidized and enthalpy after forming the array substrate of the TFT on the glass substrate. An active matrix substrate of Example 1 in which an oxime alkylation is formed and an organic protective film which is a crosslinked product of a cyclic olefin polymer having a polar group, and an organic protective film are respectively made into an acrylic resin and a polyimide resin. The active matrix substrates of the second embodiment and the third embodiment have practically good performance even after being left for a long time in a high-temperature and high-humidity environment. On the other hand, it is known that the channel portion is not formed after the array substrate is formed. Surface 43

2232-943 8-PF 200848899 乳化及甲石夕烧基化且藉由具有極性基之環狀烯烴系聚合物 之父聯物來形成有機保護膜之比較例1之主動矩陣基板係 在比較於μ施例丨之主動矩陣基板時,性能比較差。此外, 退付知並無進行陣列基板之後通道部表面之氧化及甲矽烷 土 藉由丙烯樹脂和聚醯亞胺樹脂來形成有機保護膜之 比車乂例2〜3之各個主動矩陣基板係漏電流變大。此外,比 較例2及比較例3之主動矩陣基板係並無啟動成為該基板。 【產業上之可利用性】 一 果藉由本發明之主動矩陣基板的話,則得到長壽 命、低消耗電力且高對比反襯之良好的主動矩陣型平面顒 不裝置。此外,如果藉由本發明之主動矩陣基板之製造方 法的話,則能夠以簡單之操作,來有效率 特性之主動矩陣基板。 % 【圖式簡單說明】 圖l(la)、(ib)係本發明 之1查去留^ 軔矩陣基板之某一形態 之1旦素早位之不意俯視圖( 、圖)以及包含TFT部之部 分剖面圖(下圖)。 1 圖2係使用本發明之主動 .,^ 跑早基板而製作所得到之:t 動矩陣型液晶顯示裝置之芊一 j之主 ^ 呆 形悲之俯視圖。 圖3係圖2之主動矩陣型液-圖。 m顯不裝置之X—Y剖面2232-943 8-PF 200848899 The active matrix substrate of Comparative Example 1 in which an organic protective film is formed by emulsifying and masquerading and forming a protective film by a parent conjugate of a cyclic olefin polymer having a polar group is compared with μ When the active matrix substrate of the example is applied, the performance is relatively poor. In addition, the retort is not subjected to the oxidation of the surface of the channel portion after the array substrate, and the leakage current of each active matrix substrate of the ruthenium examples 2 to 3 of the organic protective film formed by the acryl resin and the polyimide resin. Become bigger. Further, the active matrix substrate systems of Comparative Example 2 and Comparative Example 3 were not activated as the substrate. [Industrial Applicability] As a result of the active matrix substrate of the present invention, a good active matrix type planar device having a long life, a low power consumption, and a high contrast contrast is obtained. Further, according to the method of manufacturing the active matrix substrate of the present invention, the active matrix substrate having the efficiency can be easily operated. % [Simplified Schematic Description] FIGS. 1(a) and 1(b) are schematic views of the first aspect of the substrate of the present invention, and the portion including the TFT portion. Section view (below). 1 Figure 2 is a top view of the singularity of the t-type matrix liquid crystal display device using the active substrate of the present invention. Figure 3 is an active matrix type liquid-graph of Figure 2. X-Y profile of m display device

圖4係顯示本發明之有機一 之典型之構造例。心顯不裝置之有機a元件 2232-9438-PF 44 200848899 圖5係使用於主動矩陣型有機EL顯示裝置之本發明之 主動矩陣基板上之電路之某.一例子之說明圖。 圖6係顯示關於貫施例1和比較例1之主動矩陣基板 之閘極電極之電壓和源極電極/汲極電極間之電流之關係 之圖形。 圖7係習知之主動矩陣基板上之電路之某一例子之說 明圖。 【主要元件符號說明】 «〜非結晶質矽膜; 1〜基材; 2〜閘極訊號線; 3〜源極訊號線; 4〜薄膜電晶體(TFT); 5〜閘極電極; 6〜 源極電極; 7〜 ί及極電極; 8〜 氧化膜; 9〜 有機保護膜; 1〇〜接觸孔; 11- ^晝素電極; 12- 一閘極訊號線; 13- ^源極訊號線; 14- 一薄膜電晶體(TFT); 15- ^閘極電極; 2232-9438-PF 45 200848899 16〜 17〜 18〜 101, 102, 103, 104, 105' 108, 110, 111, 201, 202 , 203 , 204, 206 , 207, 208, 301, 302, 303, 304, 401, 402' 源極電極; 汲極電極; 晝素電極; -主動矩陣基板; '"彩色濾光片基板; -密封材; /有機保護膜, /電極圖案; ^輸入端子; -液晶層; -配向膜; …薄膜電晶體(TFT); /晝素電極; /閘極訊號線; >源極訊號線; /對向電極; /彩色濾光片層; /黑色矩陣; /主動矩陣基板; /發光材料層; /上部電極層(陰極); /封裝膜; /掃描電極; /薄膜電晶體(TFT); 2232-9438-PF 46 200848899 4 0 3〜資料電極; 404〜電容器; 405〜薄膜電晶體(TFT); 406〜有機EL元件。Fig. 4 is a view showing a typical configuration example of the organic one of the present invention. The organic a-element of the device is not shown. 2232-9438-PF 44 200848899 FIG. 5 is an explanatory diagram of an example of a circuit on the active matrix substrate of the present invention used in an active matrix organic EL display device. Fig. 6 is a graph showing the relationship between the voltage of the gate electrode of the active matrix substrate of Example 1 and Comparative Example 1 and the current between the source electrode and the drain electrode. Fig. 7 is an explanatory view showing an example of a circuit on a conventional active matrix substrate. [Main component symbol description] «~Amorphous enamel film; 1~substrate; 2~gate signal line; 3~source signal line; 4~thin film transistor (TFT); 5~gate electrode; 6~ Source electrode; 7~ ί and electrode; 8~ oxide film; 9~ organic protective film; 1〇~ contact hole; 11-^ halogen electrode; 12- one gate signal line; 13-^ source signal line 14- a thin film transistor (TFT); 15-^ gate electrode; 2232-9438-PF 45 200848899 16~ 17~ 18~101, 102, 103, 104, 105' 108, 110, 111, 201, 202 , 203, 204, 206, 207, 208, 301, 302, 303, 304, 401, 402' source electrode; drain electrode; halogen electrode; - active matrix substrate; '" color filter substrate; Sealing material; / organic protective film, / electrode pattern; ^ input terminal; - liquid crystal layer; - alignment film; ... thin film transistor (TFT); / halogen electrode; / gate signal line; > source signal line; / counter electrode; / color filter layer; / black matrix; / active matrix substrate; / luminescent material layer; / upper electrode layer (cathode); / encapsulation film; Scanning electrode; / Thin film transistor (TFT); 2232-9438-PF 46 200848899 4 0 3~ data electrode; 404~ capacitor; 405~ thin film transistor (TFT); 406~ organic EL element.

4747

2232-943 8-PF2232-943 8-PF

Claims (1)

200848899 十、申請專利範圍·· 1·種主動矩陣基板,包括基材以及形成於該 且具有非結晶質梦膜$每 、q 土材上 曰貝’腰之涛膜電晶體所構成, 其特徵在於: =:梦膜係在膜表面,具有遍層,並 非結曰曰貝石夕膜±,層積有機保護膜。 在 2.如申請專利範圍帛 氧化層之厚度係5⑽以下。動巨陣基板,其中,石夕 3·如申請專利範圍第…項之主動矩陣基板,i中, 非結晶質矽膜係還進行甲矽烷基化。 板,1Γ:!利範圍第1至3項中任-項之主動矩陣基 ’、有機保護膜係由具有極性基之 物之交聯物所構成之膜。 “ 口 5· —種主動矩陣基板掣 ^ m + 製造如申請專利範 圍弟1項所述之主動矩陣基板, 其特徵在於具有: (1)氧化形成於基材上之薄 又潯膜電日日體之非結晶質矽膜 A之表面而仔到在表面具有纟 製m 乳化層之非結晶質梦膜b之 士 t (2)在非結晶質石夕膜β之表面上,藉由感應放射線性 树脂組成物而形成有機保護膜之製程。 6.如申請專利範圍第5項之主動矩陣基板之製造方 ^其中’藉著由和臭氧水之接觸、在氧化性氣體氣氛之 系外線此射、在氧化性氣體氣氛之加熱以及曝露至包含氧 2232-943 8-PF 48 ,200848899 化性氣體之電漿中之曝露所構成 之群組選出之至少_種$200848899 X. Patent Application Scope 1. A kind of active matrix substrate, including a substrate and a crystal film formed on the mucous membrane of the non-crystalline dream film It is: =: The dream film is on the surface of the film, and it has a layer of ubiquitous layer, which is not a layer of organic film. 2. The thickness of the oxide layer is 5 (10) or less as in the patent application. The giant matrix substrate, wherein, Shi Xi 3 · as in the active matrix substrate of the patent application scope, i, the amorphous ruthenium film system is also subjected to methylation. The sheet, the active matrix base of any of items 1 to 3, and the organic protective film are films composed of a crosslinked substance having a polar group. The invention relates to an active matrix substrate as described in claim 1, which is characterized in that: (1) a thin and thin film electric day formed by oxidation on a substrate The surface of the amorphous non-crystalline enamel film A and the amorphous film of the m-emulsion layer on the surface of the amorphous film b (2) on the surface of the amorphous stone film β, by inductive radiation The process of forming an organic protective film by a resin composition. 6. The manufacturing method of the active matrix substrate according to item 5 of the patent application section, wherein 'by the contact with ozone water, the external line in the oxidizing gas atmosphere At least one of the groups selected by the group consisting of heating in an oxidizing gas atmosphere and exposure to a plasma containing oxygen 2223-943 8-PF 48 , 200848899 chemical gas 7項中任一項之主動矩陣基 •如申請專利範圍第5至 板之製造方法,其中,感應放射線性樹脂組成物係包含具 有極性基之環狀烯烴系聚合物、交聯劑、感應放射線化合 物及溶劑所構成。 9· 一種平面顯示裝置,其特徵在於:包括如申請專利 範圍第1至4項中任一項所述之主動矩陣基板所構成。 2232-9438-PF 49The active matrix base according to any one of the seven items, wherein the inductively radiating linear resin composition comprises a cyclic olefin polymer having a polar group, a crosslinking agent, and an induction radiation. It consists of a compound and a solvent. A planar display device comprising the active matrix substrate according to any one of claims 1 to 4. 2232-9438-PF 49
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