200847481 CHIPO_096TW7246 九、發明說明： 【發明所屬之技術領域】 本龟明為一種熱電分離之發光二極體座體及其散熱單元 …構4寸別係為種用以承載高功率發光二極體之發光二極體 座體結構。 【先前技術】 由於间功率發光二極體晶片之製造技術不斷進步，所以發 光二極體晶片之發光效率也不斷提升’並且使得發光二極體可 應用的範圍也越來越廣泛，但是目前卻未能有效地發光二極體 的輸入功率轉換成光能，反而是將大部>的輸入功率轉換成熱 能，所以若能使發光二極體座體結構分別提供導熱及導電的路 徑，則可提高發光二極體座體結構的導熱速度，進而可將大部 分的輸入功率轉換成光能，將可提升發光二極體之發光效率。 如美國專利公告第7,098,483號中揭露之一種可操作於高 鲁溫下之發光二極體座體結構，其包括—金屬基板、一陶瓷基板 及一發光二極體。金屬基板係包括一熱連接板及一對電極，熱 連接板及電極係設置於金屬基板下方。陶瓷基板係設置於金屬 基板上，而發光二極體則固晶於金屬基板或陶瓷基板上。發光 二極體係經由金屬基板導熱結合熱連接板，並且電極係電^連 接於在下方的電連減。減也可藉由複數糾熱體導熱連接 於熱連接板而加強導熱，使熱可加速傳導出。 雖然上述揭露之發光二極體座體結構可提供熱電分離之 述徑，進而加快散熱速度，但是上述之發光二極體座體結構僅 200847481 . CHIPQ_096TWT246 能承載面上型發光二極體(Face_up LED)，而無法承載多顆金屬 基板垂直蝥光二極體（Vertol LED Mental aU〇yed Substrate， "MS)因為金屬基板垂直發光二極體採用了垂直電流路 '極¥極位於發光二極體上方，而P極電極位於發光二 極體下方1顧金屬作為基板之材質，所以當多顆金屬基板 垂直發光二極體同時設置在發光二極體座體結構中時，金屬基 板垂直發光二極體藉由導熱體與金屬基板導熱結合時，將會ς 生短路的現象〇 曰又 【發明内容】 本發明係提供-種熱電分離之發光二極體座體及其散埶 單元結構，其係將散熱料設計成為—賴電分離的結構，使 得即使設置了㈣發光二極體在發光二極體座體中，亦不 熱、電無法分離之問題。 ^ 為達上述之功效，本發明提供了一種熱電分離 體座體結構，其包括：一散熱單元，豆且士 ^ 絕緣散熱基材之-侧面上形成有至少崎散熱基材， _ 乐一導電部及至少一 第一導熱結合部；以及一座體單元，並白社· 、 · 一"" *8^，目 有一晶粒區及一底面；複數條導熱體，苴办 _ /、 導熱體之—第—端部用以與設置於晶粒區體本體’又 結合，而導熱體之一第二端部用以與第一、x 〃 一極體導熱 合；以及至少-導電體，形成於座體本體上¥=^合^熱結 電部設置於晶粒區處，又具有一第三導命立“其具有一第二導 第三導電部係與第一導電部電性連接。兒邻戍置於底面上，且 200847481 CHIPO_096TW7246 為達上述之功效，本發明又提供了一種熱電分離之散熱單 元，其包括：一絕緣散熱基材；至少一第一導電部，形成於絕 緣散熱基材之一侧面上；以及至少一第一導熱結合部，形成於 侧面上。 藉由本發明的實施，至少可以達到下列之進步功效： 一、 能設置多顆發光二極體於發光二極體座體中，亦不會有 熱、電無法分離之問題。 二、 選用成本較低之材質作為絕緣散熱基材，亦能有熱電分離 之功效，可大幅降低製造成本。 為了使任何熟習相關技藝者了解本發明之技術内容並據 以實施，且根據本說明書所揭露之内容、申請專利範圍及圖 式，任何熟賢相關技藝者可輕易地理解本發明相關之目的及優 點，因此將在實施方式中詳細敘述本發明之詳細特徵以及優 【實施方式】 第1圖為本發明之一種熱電分離之發光二極體座體結構 10之實施例圖。第2圖為第1圖中沿A-A剖線之剖面實施例 圖。第3圖為本發明之一種熱電分離之散熱單元11之實施例 圖。第4圖為本發明之一種熱電分離之發光二極體座體結構10 之分解結合實施例圖。 如第1圖所示，本實施例為一種熱電分離之發光二極體座 體結構10，其包括：一散熱單元11 ;以及一座體單元12。 如第2圖所示，散熱單元11，其包括一絕緣散熱基材111 ; 200847481 CHIPD_096TWT246 至少一第一導電部112 ;以及至少一第一導熱結合部113。 絕緣散熱基材Π1，其係可以為一氧化銘基材或一氮化|呂 基材，但是由於導熱效果較佳之氧化鋁基材的製造成本較高， 所以絕緣散熱基材111也可選用製造成本較低之金屬基材 114，並且在絕緣散熱基材m上結合一絕緣層115。 如第2圖所示’結合絕緣層115之原因是因為如果是放置 了多顆金屬基板垂直發光二極體20於座體單元中時，由於 金屬基板垂直發光二極體20之基板21也是金屬材質，而為了 鲁避免多顆金屬基板垂直發光二極體20在利用打線技術彼此電 性連接後會與金屬基材114間發生短路的現象，所以本實施例 係在金屬基材114上結合絕緣層Π5用以提供電性絕緣，並可 確保設置多顆金屬基板垂直發光二極體20於發光二極體座體 結構10時不會發生短路的現象。 金屬基材114上的絕緣層115不但要具有電性絕緣的特 性’也要同時具有良好的導熱效果，因此絕緣層115之材質可 書以選用氧化鋁、氮化鋁或類鑽石碳（Diamond-Like Carbon， DLC)，並可利用鍍膜技術使絕緣層115形成於金屬基板上，例 如類鑽石竣層可利用物理氣相沈積技術（Physical Vapor Deposition，PVD)艘在金屬基材114上。如此可以不但使絕緣 散熱基材111具有良好的導熱效果，也可降低製造成本。 如第3圖所示，第一導電部112，其係形成於絕緣散熱基 材111之一侧面上，並且位於絕緣散熱基材ln之邊緣，用以 與座體單元12之第三導電部128電性結合。如第1圖所示， 第一導電部112的其中一部份係外露於座體單元12外，用以 200847481 CHIPO_096TW7246 並提供散熱單元11 與其他發光二極體座體結構作電性連接 之導電途徑。 如第2圖所示，第一導熱結人 材m上，並且與第一導電部112°^13 ’形成於絕緣散熱基 近絕緣散熱基材⑴的中間區_。二侧面’並且位於靠 之間彼此不相互接觸，並且任4任=第-導熱結合部113 1兩* 弟 ¥熱結合部113亦不與第 獨1==相互接觸:第―導熱結合部113主要是用以提供 七熱結合部113提供獨立的導 電途徑，所以使得散熱單元η成為埶帝 乂局熱甩分離的結構。 座體單兀12其包括·—座體本體l2i ;複數條導熱體 122 ;以及至少一導電體123。 座體本體121，其具有一晶粒區124及一底面125，晶粒 區124用以放置發光二極體2〇,有時依使用需求也可同時放置 多顆發光二極體20。座體本體121可以為一印刷電路板或一陶 瓷基板’由於陶瓷基板也具有良好的熱傳導特性，所以也可藉 _由陶^:基板快速地將熱傳導遠離發光二極體2〇。 複數條導熱體122，其係穿透座體本體121，導熱體122 分別具有一第一端部及一第二端部，第一端部用以與設置於晶 粒區124之發光二極體20的底部導熱結合，而第二端部則用 以與散熱單元11之第一導熱結合部113導熱結合。發光二極 體20累積之熱可自第一端部經由導熱體122傳導至第二端 部，再由第二端部傳導至散熱單元η之第一導熱結合部113， 複數條導熱體122可提供足夠的導熱途徑，並能進一步加快導 熱速度。 200847481 CHIPO_096TW7246 為了再進一步提高導熱體122與第一導熱結合部113間的 導熱速度，可再增加至少一第二導熱結合部126導熱結合於導 熱體122之第二端部後，再將第二導熱結合部126與第一導熱 結合部Π3導熱結合，藉此增加導熱體122之第二端部與第一 導熱結合部113之接觸面積，並提高將導熱體122將熱傳導至 第一導熱結合部113之速度。 導電體123,其具有一第二導電部127及一第三導電部 128，導電體123形成於座體本體121上，而第二導電部127 係設置於晶粒區124處，第三導電部128則設置於底面125上， 並且第三導電部128係電性連接於第一導電部112。當使用發 光二極體座體結構10時，利用直流電源提供驅動電流至第一 導電部112外露之部分，用以將驅動電流經由導電體123的第 三導電部128傳導至第二導電部127，並且利用打線技術電性 連接至發光二極體20，用以驅動發光二極體20。 如第4圖所示，散熱單元11與座體本體121之間係分別 藉由第一導電部112對應於第三導電部128，以及第一導熱結 合部113對應於第二導熱結合部126而相互結合。散熱單元11 可藉由焊接技術與座體本體121結合為一體，且所使用之結合 材料可以為一錫/銻或一錫/鉛之焊接材，並使第一導電部112 電性連接於第三導電部128，以及第一導熱結合部113導熱詰 合於第二導熱結合部126,進而使得發光二極體座體結構10 成為一種熱電分離之結構。 藉由分別提供導熱及導電之途徑，使發光二極體座體結構 10能夠更加快速地將熱導出並遠離發光二極體20，而使得發 CHIFO_096T17246 200847481 光二極體20不會受到熱的影響而降低發光效率，並且本實施 例之發光二極體座體結構10不但可承載面上型發光二極體 20 ,也可同時承載多顆金屬基板垂直發光二極體20,進而使得 本實施例之發光二極體座體結構10具有更廣泛的應用範圍。 惟上述各實施例係用以說明本發明之特點，其目的在使熟 習該技術者能暸解本發明之内容並據以實施，而非限定本發明 之專利範圍，故凡其他未脫離本發明所揭示之精神而完成之等 效修飾或修改，仍應包含在以下所述之申請專利範圍中。 【圖式簡單說明】 第1圖為本發明之一種熱電分離之發光二極體座體結構之實施 例圖。 第2圖為第1圖中沿A-A剖線之剖面實施例圖。 第3圖為本發明之一種熱電分離之散熱單元之實施例圖。 第4圖為本發明之一種熱電分離之發光二極體座體結構之分解 結合實施例圖。 【主要元件符號說明】 10 ...........................發光二極體座體結構 11 ................................·散熱單元 111 ............絕緣散熱基材 112 ...................第一導電部 113 ..............…第一導熱結合部 114 .............•…金屬基材 200847481 CHIFO_096TW7246 115.................絕緣層 12.••….··..···….·座體單元 121 .................座體本體 122 ...........···.··導熱體 123.····.......••…導電體 124 .............•…晶步立區 125 ........... ·底面 126 .......第二導熱結合部 m ··".···"·······第二導電部 128 ········………第三導電部 20 發光二極體 21··...............••基板200847481 CHIPO_096TW7246 Nine, invention description: [Technical field of invention] This turtle is a kind of thermoelectric separation light-emitting diode body and its heat-dissipating unit. The 4-inch series is used to carry high-power light-emitting diodes. Light-emitting diode body structure. [Prior Art] Due to the continuous advancement in the manufacturing technology of the inter-power LED chip, the luminous efficiency of the LED chip is also increasing, and the range in which the LED is applicable is more and more widely used, but currently If the input power of the light-emitting diode is not converted into light energy, the input power of most of the light is converted into heat energy. Therefore, if the light-emitting diode body structure provides a heat conduction and a conductive path respectively, The heat conduction speed of the structure of the light-emitting diode body can be improved, and most of the input power can be converted into light energy, which can improve the luminous efficiency of the light-emitting diode. A light-emitting diode structure capable of operating at a high temperature, as disclosed in U.S. Patent No. 7,098,48, which comprises a metal substrate, a ceramic substrate and a light-emitting diode. The metal substrate includes a thermal connection plate and a pair of electrodes, and the thermal connection plate and the electrode system are disposed under the metal substrate. The ceramic substrate is disposed on the metal substrate, and the light emitting diode is crystallized on the metal substrate or the ceramic substrate. The light-emitting diode system thermally couples the thermal connection plate via the metal substrate, and the electrode system is electrically connected to the electrical connection below. The reduction can also be enhanced by the heat conduction of the plurality of heat-regulating bodies to the thermal connection plate, so that the heat can be accelerated and conducted. Although the above-mentioned light-emitting diode body structure can provide a description of the thermoelectric separation, thereby accelerating the heat dissipation speed, the above-mentioned light-emitting diode body structure is only 200847481. The CHIPQ_096TWT246 can carry the surface-type light-emitting diode (Face_up LED) ), it is not possible to carry a plurality of metal substrate vertical light-emitting diodes (Vertol LED Mental aU〇yed Substrate, "MS) because the vertical light-emitting diode of the metal substrate uses a vertical current path, which is located above the light-emitting diode The P pole electrode is located under the light emitting diode as a material of the substrate, so when the plurality of metal substrate vertical light emitting diodes are simultaneously disposed in the light emitting diode body structure, the metal substrate vertical light emitting diode When the heat conductor is thermally coupled to the metal substrate, the phenomenon of short circuit will occur. [Invention] The present invention provides a thermoelectric separation light-emitting diode body and a dilation unit structure thereof. The heat dissipating material is designed to be separated from the electric structure, so that even if the (four) light emitting diode is disposed in the light emitting diode body, it is not separated from heat and electricity. problem. In order to achieve the above-mentioned effects, the present invention provides a thermoelectric separation body structure, comprising: a heat dissipating unit, a bean and a heat dissipating substrate - at least a surface of the heat dissipating substrate is formed on the side surface, _ And at least a first heat conducting joint; and a body unit, and a white body, a "" *8^, a grain area and a bottom surface; a plurality of heat conductors, _ /, heat conduction The first end of the body is combined with the body disposed on the die body body, and the second end of the heat conductor is used for heat conduction with the first, x 〃 one pole body; and at least the electric conductor, Formed on the body of the body, the hot junction is disposed at the die area, and has a third guiding life "having a second conductive third conductive portion electrically connected to the first conductive portion The child is placed on the bottom surface, and 200847481 CHIPO_096TW7246 is to achieve the above-mentioned effects. The present invention further provides a heat and electricity separation heat dissipation unit, comprising: an insulating heat dissipation substrate; at least one first conductive portion formed in the insulation heat dissipation One side of the substrate; and at least one first guide The thermal bonding portion is formed on the side surface. With the implementation of the present invention, at least the following advancements can be achieved: 1. Multiple LEDs can be disposed in the LED body, and there is no heat or electricity. The problem of separation 2. The use of a lower cost material as the insulating heat sink substrate can also have the effect of thermoelectric separation, which can greatly reduce the manufacturing cost. In order to enable any skilled person to understand the technical content of the present invention and implement it accordingly, And the related objects and advantages of the present invention can be easily understood by those skilled in the art in light of the disclosure, the scope of the invention, and the drawings. Therefore, the detailed features and advantages of the present invention will be described in detail in the embodiments. Embodiments Fig. 1 is a view showing an embodiment of a thermoelectric separation LED body structure 10 of the present invention. Fig. 2 is a cross-sectional view of the cross section taken along line AA of Fig. 1. Fig. 3 is a view An embodiment of a heat-dissipating heat dissipating unit 11 of the present invention. FIG. 4 is an exploded and combined implementation of a thermoelectrically separated light-emitting diode base structure 10 of the present invention. As shown in FIG. 1, the embodiment is a thermoelectrically separated LED body structure 10 comprising: a heat dissipating unit 11; and a body unit 12. As shown in Fig. 2, the heat dissipating unit 11 The device includes an insulating heat dissipating substrate 111; 200847481 CHIPD_096TWT246 at least one first conductive portion 112; and at least one first heat conducting bonding portion 113. The insulating heat dissipating substrate Π1, which may be an oxidized substrate or a nitriding| Lu base material, but because the alumina substrate having better heat conduction effect is expensive to manufacture, the insulating heat dissipation substrate 111 can also be selected from the metal substrate 114 having a lower manufacturing cost, and an insulating layer 115 is bonded to the insulating heat dissipation substrate m. As shown in Fig. 2, the reason for combining the insulating layer 115 is because if a plurality of metal substrate vertical light-emitting diodes 20 are placed in the base unit, the substrate 21 of the vertical light-emitting diode 20 of the metal substrate is also In the case of a metal material, in order to prevent a plurality of metal substrate vertical light-emitting diodes 20 from being electrically connected to each other by a wire bonding technique, a short circuit occurs between the metal substrate 114 and the metal substrate 114. Binding insulating layer on the metal substrate 114 Π5 for providing electrical insulation, is provided to ensure that multiple pieces and the metal substrate 20 perpendicular to the light emitting phenomenon does not occur in the short circuit 10 is two light emitting diode structure of the diode. The insulating layer 115 on the metal substrate 114 not only has the characteristics of electrical insulation, but also has good thermal conductivity. Therefore, the material of the insulating layer 115 can be selected from alumina, aluminum nitride or diamond-like carbon (Diamond- Like Carbon, DLC), and the insulating layer 115 can be formed on the metal substrate by using a coating technique. For example, the diamond-like layer can be mounted on the metal substrate 114 by Physical Vapor Deposition (PVD). This not only allows the insulating heat-dissipating substrate 111 to have a good heat-conducting effect, but also reduces the manufacturing cost. As shown in FIG. 3, the first conductive portion 112 is formed on one side of the insulating heat dissipation substrate 111 and is located at the edge of the insulating heat dissipation substrate ln for the third conductive portion 128 of the base unit 12. Electrical combination. As shown in FIG. 1 , a portion of the first conductive portion 112 is exposed outside the base unit 12 for use in the electrical connection of the heat sink unit 11 and other light-emitting diode structures. way. As shown in Fig. 2, the first heat conducting member m is formed on the intermediate portion _ of the insulating heat dissipating base (1) with the first conductive portion 112° 13 '. The two side faces 'and are not in contact with each other between the two sides, and any four of the first heat conduction joint portions 113 1 and the other heat source joint portions 113 are not in contact with each other: the first heat conduction joint portion 113 The main purpose is to provide a seven-heat junction 113 to provide an independent conductive path, so that the heat-dissipating unit η becomes a structure in which the heat-dissipating unit is thermally separated. The body unit 12 includes a body body l2i, a plurality of heat conductors 122, and at least one electrical conductor 123. The body body 121 has a die area 124 and a bottom surface 125. The die area 124 is used to place the light emitting diodes 2, and sometimes the plurality of light emitting diodes 20 can be placed at the same time. The body body 121 can be a printed circuit board or a ceramic substrate. Since the ceramic substrate also has good heat conduction characteristics, it is also possible to quickly transfer heat away from the light-emitting diode 2 by the substrate. The plurality of heat conductors 122 are penetrating through the body body 121. The heat conductors 122 have a first end portion and a second end portion, respectively. The first end portion is used for the light emitting diode disposed in the die region 124. The bottom of the 20 is thermally coupled, and the second end is configured to be thermally coupled to the first thermally conductive joint 113 of the heat dissipating unit 11. The heat accumulated by the LEDs 20 can be conducted from the first end to the second end via the heat conductor 122, and then transmitted from the second end to the first thermally conductive joint 113 of the heat dissipating unit n, and the plurality of thermal conductors 122 can be Provides sufficient thermal conductivity and further accelerates thermal conduction. 200847481 CHIPO_096TW7246 In order to further increase the heat conduction speed between the heat conductor 122 and the first heat conduction joint 113, at least one second heat conduction joint 126 may be further thermally coupled to the second end of the heat conductor 122, and then the second heat conduction. The bonding portion 126 is thermally coupled to the first thermally conductive joint Π3, thereby increasing the contact area between the second end of the thermal conductor 122 and the first thermally conductive joint 113, and improving the conduction of heat from the thermal conductor 122 to the first thermally conductive joint 113. Speed. The conductive body 123 has a second conductive portion 127 and a third conductive portion 128. The conductive body 123 is formed on the body body 121, and the second conductive portion 127 is disposed at the die region 124. The third conductive portion 128 is disposed on the bottom surface 125 , and the third conductive portion 128 is electrically connected to the first conductive portion 112 . When the light emitting diode body structure 10 is used, a driving current is supplied to the exposed portion of the first conductive portion 112 by using a DC power source for conducting the driving current to the second conductive portion 127 via the third conductive portion 128 of the electrical conductor 123. And electrically connected to the light emitting diode 20 by using a wire bonding technique for driving the light emitting diode 20. As shown in FIG. 4 , the heat dissipation unit 11 and the base body 121 respectively correspond to the third conductive portion 128 by the first conductive portion 112 , and the first heat conductive joint portion 113 corresponds to the second heat conductive joint portion 126 . Combine with each other. The heat dissipating unit 11 can be integrated with the body body 121 by a soldering technique, and the bonding material used can be a tin/bis or tin/lead solder material, and the first conductive portion 112 is electrically connected to the first conductive portion 112. The three conductive portions 128 and the first thermally conductive joint portion 113 are thermally coupled to the second thermally conductive joint portion 126, thereby making the light emitting diode base structure 10 a thermoelectrically separated structure. By providing heat conduction and conduction, respectively, the light-emitting diode structure 10 can be conducted to conduct heat more quickly and away from the light-emitting diode 20, so that the CHIFO_096T17246 200847481 light diode 20 is not affected by heat. The light-emitting diode structure 10 of the present embodiment can not only carry the surface-type light-emitting diode 20 but also the plurality of metal substrate vertical light-emitting diodes 20 at the same time, thereby making the embodiment The light-emitting diode body structure 10 has a wider range of applications. The embodiments are described to illustrate the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the present invention and to implement the present invention without limiting the scope of the present invention. Equivalent modifications or modifications made by the spirit of the disclosure should still be included in the scope of the claims described below. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing an embodiment of a structure of a thermoelectrically separated light-emitting diode of the present invention. Fig. 2 is a view showing a cross-sectional view taken along line A-A in Fig. 1. Fig. 3 is a view showing an embodiment of a heat-dissipating heat-dissipating unit of the present invention. Fig. 4 is a view showing an exploded view of a structure of a thermoelectrically separated light-emitting diode of the present invention. [Main component symbol description] 10 ...........................Light-emitting diode structure 11 ........ ........................ Heat Dissipation Unit 111............Insulation Heat Dissipation Substrate 112 ..... ..............The first conductive portion 113 .................the first heat conduction joint portion 114 .......... ...•...Metal substrate 200847481 CHIFO_096TW7246 115.................Insulation layer 12.••....······················ .................seat body 122 ...........······Thermal body 123.····.... ...••...conductor 124 .............•... 晶步立区125 ........... ·Bottom surface 126 ....... Second heat conducting joint m ·········································· ·...............••Substrate
1212