TW200847458A - Solar cell module and wavelength converting type condensing film for solar cell module - Google Patents

Solar cell module and wavelength converting type condensing film for solar cell module Download PDF

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TW200847458A
TW200847458A TW097104592A TW97104592A TW200847458A TW 200847458 A TW200847458 A TW 200847458A TW 097104592 A TW097104592 A TW 097104592A TW 97104592 A TW97104592 A TW 97104592A TW 200847458 A TW200847458 A TW 200847458A
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film
light
solar cell
layer
refractive index
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TW097104592A
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Chinese (zh)
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TWI348225B (en
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Kaoru Okaniwa
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Hitachi Chemical Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02366Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

Abstract

A solar cell module which can enhance the electric power generating efficiency by enhancing light utilizing ratio is provided. The formula n1 ≤ n2 ≤ n3 ≤ n4 is satisfied, when a sealing material 202 is set as a first layer, a wavelength converting type condensing film 300 is set as a second layer, an anti-reflection film is set as a third layer, an n-type layer is set as a fourth layer, and the refractive index of each layer is respectively set as a first refractive index n1, a second refractive index n2, a third refractive index n3 and a fourth refractive index n4. The wavelength converting type condensing film 300 make a surface from which an incident light irradiated be scraggy, and the refractive index of the wavelength converting type condensing film 300 ranges from 1.6 to 2.4. Also, the wavelength converting type condensing film 300 is transparent and includes a fluorescent material.

Description

200847458 ' 27222pif 九、發明說明: 【發明所屬之技術領域】 本發明是關於-種太陽電池模組以及太陽電 波長轉滅聚細,更詳細Μ,本發明是關於—種= 將入射光有效地導人至太陽電池單元中,經由波 將並不有助於發電的波長域的光轉換為有助於發電 域的光’藉絲提高發電效率的域電池池、= 電池模組用波長轉換式聚光膜。 味 【先前技術】 下述非專利文獻}中揭示了先前的石夕晶體系 极組。參照圖!的概略圖(剖面圖)來說明先前的太陽= 池拉組。先誠太陽電池模組由太陽f池單元1⑽ ^ =20卜密封材(填充材)2〇2、標記線(tab⑹)加' 及為膜(back film) 204所構成。 ( 於入射,挪的入射侧設置著保護玻璃(亦稱為蓋玻 离(⑺術glass)) 2CU。使用了注重耐衝擊性的強化 ^乍為保護玻璃2CU。為了使保護_ 2〇1缝欠 層=封材逝之間的密著性優良,藉_印一心 口來,單面烏成為凹凸形狀。又,該凹凸形狀形成於 電t P,形成於圖1中的保護玻璃下表面,太陽 包池核組的表面2〇la較為平滑。 八的ί封材搬通常是以乙騎酸乙獅旨絲物為主要成 ,該密封材202亦稱為填充材。密封材则太 I早7C 100進行密封。太陽電池單元1〇〇將經由保護 6 200847458 • 27222pif ,璃2=以及,封材2〇2而導入的入射光轉換 I太陽電池單元100例如使❹結㈣基板或者單結晶 石=。X ’於與密封材2〇2的上述入射側相反 = 成著背膜204。 ^ ’下述專利文獻丨中揭示了具有如下構成的太陽電 :,即,使用昆蟲的目艮(m〇th_eye,蛾眼)構造,來 二=j傾斜方向的所有角度的外部光的反射損失, =外部光有效地導人至太陽電池單以。如下200847458 '27222pif IX. Description of the Invention: [Technical Field] The present invention relates to a solar cell module and a solar cell wavelength-converting polycondensation, and more specifically, the present invention relates to a kind of Leading to the solar cell unit, converting the light in the wavelength domain that does not contribute to power generation into a domain battery cell that contributes to the power generation efficiency of the power generation domain, and the wavelength conversion type of the battery module Concentrating film. Taste [Prior Art] The prior group of the Shihuajing system is disclosed in the following non-patent literature. Refer to the picture! A rough view (cross-sectional view) to illustrate the previous sun = pool pull group. The Sunshine solar cell module is composed of a solar f cell unit 1 (10) ^ = 20 b sealing material (filler) 2 〇 2, a mark line (tab (6)) plus ' and a back film 204. (In the incident, the incident side is provided with a protective glass (also known as a cover glass ((7) glass)) 2CU. The use of stress-resistant reinforcement is used to protect the glass 2CU. In order to protect the _ 2〇1 seam The undercoat layer = the sealing material is excellent in adhesion, and the single-faced black is formed into a concave-convex shape by the one-in-one printing. Further, the concave-convex shape is formed on the electric t P and is formed on the lower surface of the protective glass in FIG. The surface of the sun pack core group 2〇la is relatively smooth. The seal material of the eight is usually based on the material of the B-acid lion, and the sealant 202 is also called the filler. The seal material is too early. 7C 100 is sealed. The solar cell unit 1〇〇 converts the incident light converted by the protection 6 200847458 • 27222pif, the glass 2= and the sealing material 2〇2 into the solar cell unit 100, for example, a tantalum (four) substrate or a single crystal stone. = X' is opposite to the above-mentioned incident side of the sealing material 2〇2 = the back film 204. ^ 'The following patent document 丨 discloses a solar electric power having the following configuration: that is, using an insect's target (m 〇th_eye, moth eye) structure, come to the outside of all angles of the direction of the tilt = j Reflection loss, efficiently = external light to guide people to a single solar cell. Follows

述=蟲的眼(酬h_eye)構造是藉由形成微細J 、=錐或二角錐、四角錐等的透明形狀物來減少反射 亚有效地導入外部光的技術。 、v =如專利文獻2〜14所述,已多次提出了於太陽電 稱為面财置—種層的方法,該層是使用螢光物質(亦 或Γΐΐ材料’來對太陽綠中無助於發電的紫外線區域 進行波長轉換,藉此’發出有助於發電 t ’對於下述專利文獻2〜14中的建議而言, ::長轉嶋光)層發出的光的前進方向進行控制, 去獲付預期的效果。亦即,經波長轉換的光朝所有 因此1層構造的_部分上發出㈣不僅導入 面而5:朝人射方向及與該入射方向垂直的層的 面方向w進,該些情形無助於發電。 =散^剌圭弘編「太陽光發電」_最新技術 ”糸統,2000年,CMC股份有限公司 7 200847458 27222pif 非專利文獻2:豐田宏;“無反射週期構造,,,光學, 32卷8號489頁(2003年) 非專利文獻 3 · N.Kamata,IXTerunuma,R.Ishii,H.Satoh, S.Aihara,Y.Yaoita,S.Tonsyo,j QrganometaiHc Qierti·,685, 235,2003. ’ ’ 專利文獻1 專利文獻2 專利文獻3 專利文獻4 曰本專利特開2005-101513號公報 曰本專利特開2000-328053號公報 曰本專利特開平09-230396號公報 曰本專利特開2003-243682號公報 專利支獻5:曰本專利特開2〇〇3-218379號公報 專利文獻6:曰本專利特開號公報 專利文獻7:日本專利特開2⑻卜〇24716號公報 專利文獻8·曰本專利特公平〇8_〇〇4147號公報 專利文獻11 專利文獻12 專利文獻13 專利文獻14 專利文獻15 專利文獻9:日本專利特開2001-094128號公報 專利文獻ίο ·日本專利特開2〇〇1_352〇91號公報 曰本專利特開平10-261811號公報 曰本專利第2660705號公報 曰本專利特開2006-269373號公報 曰本專利特開昭63-006881號公報 妙工、日本專利特開2002-225133號公報 太陽、w上述先刖的太陽電池模組存在如下問題··由於 A陽电池單元100鱼穷封从 於界面上產生二才的折射率差較大,故而會 m 先射無法有效地利用光(入射光205)。 列如’石夕晶體系太陽電池亦存在如下問題:無法 8 200847458 27222pif 有效地利用太陽光中的波長較400腿短的光、 較麗rnn長的光,'約S6%的太陽光能量因該光哉失長 (spectnmi mismatch)而無助於光電轉換。 s大配 【發明内容】 本發明是為了解決該些問題而開發者,目的在於 Ο -種可以藉由提高光效率來提高發電效率的太陽h 模組以及太陽電池模組用波長轉換式聚光膜。 包池 此外,本發明的目的在於提供一種可以降低 配引起的太陽光損失,並可以提高光利用以、 =率的太陽電池模組以及太陽電池模組用波長轉 為了解決上述問題,本發g月的太陽 含多個透光性層的構件而成,且根據入射光包 太陽電池模組中,當自上述人射光=二, 透光性層設為第1層、第2層、…第m層’並將各=個 折射率設為第1折射率ηι、第2折射_ 味曰的各 -時:_…純,而 ^疋使上述人射光的人射側為凹凸形狀的波^轉換二 光膜,該波長轉換式㈣_折射率為16〜24 長轉換式聚光膜包含螢光物質。 .且该波 對於該太陽電池模組而言,較好的是,合上 的波長為400〜1200麵,使由以下的式田^ _射光 9 200847458 27222pif L數ij ⑴ L· 其中/為透射率,L為膜平均厚度(_)。 5 :乂好,:、上述波長轉換式聚光膜,以於上述入 ^白名入H則然間~、地鋪滿多數個微細的凸形狀或凹形狀 的夕角錐或圓錐的方式而形成。 Ο 又,較好的是,上述波長轉換式聚光膜中所包 光物質吸收300〜400聰的光,發出400〜·職的光忠 且可以進行波長轉換。 ^ 即上述波長轉換式聚光膜使用上述螢光物質來吸收 f0·〜彻麵的光,並發出铜〜蘭腿的光。Ϊ m粒長職式聚光财妨波長職 nm的光導^太陽電池單元中而使太陽電^ 早7L進订光電轉換。因此,可克服光譜失配。 踩^有微㈣凹凸形狀的波長轉換式聚光膜含有 床士物貝,因此,較除了上述專利文獻丨以外所採 獨藉由聚光膜來控制折射率的槿 、早 膜可構成,上錢長轉換式聚光 m 轉來進—步提高效果。此外,可以藉由 =凸制光的方向性,從而可以將入射二 1出的先一併有效地導入至太陽電池單元中。 =明的太陽電池模組可以降低由光譜失配 ^先知失’而且可以控制光的前進 = 光利用效率,從而提高發電效率。 α此了以心 為了解決上述問題’本發明的太陽電池模組用波長轉 10 200847458 27222pif 層有包含多個透紐 據入射光來發電的太陽雷冰握知#仵而成且根 兮太陽雷上: 用的波長轉換式聚光膜, f 組用的波長轉換式聚光膜 的入射側,作為上述多個透光性層中的至= :=的f聚光膜,使上述入射光的入射惻 性卜為第!展射光的入射側,將上述多個透光The structure of the worm's eye (respective h_eye) is a technique for reducing the reflection and efficiently introducing external light by forming a transparent shape such as a fine J, a cone, a double pyramid, or a quadrangular pyramid. , v = as described in Patent Documents 2 to 14, has been proposed many times in the solar power called the face-making method, the layer is the use of fluorescent substances (or Γΐΐ materials) to the sun green The ultraviolet ray region which contributes to power generation is subjected to wavelength conversion, whereby 'issuing power generation t' is controlled for the advancement direction of light emitted by the layer of the following long-term twilight layer for the proposals in the following Patent Documents 2 to 14. , to get the expected results. That is, the wavelength-converted light is emitted toward all of the _ portions of the one-layer structure (four) not only the introduction surface but also the face direction w of the layer perpendicular to the incident direction and the direction perpendicular to the incident direction, which does not contribute to Power generation. = 散 剌 剌 弘 弘 " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " " 489 pages (2003) Non-patent literature 3 · N.Kamata, IXTerunuma, R.Ishii, H.Satoh, S.Aihara, Y.Yaoita, S.Tonsyo,j QrganometaiHc Qierti·,685, 235,2003. ' ' Patent Document 1 Patent Document 2 Patent Document 3 Patent Document 4 Patent Publication No. 2005-101513, Japanese Patent Laid-Open Publication No. 2000-328053, Japanese Patent Laid-Open No. Hei 09-230396, No. JP-A-2003-243682 Patent Publication No. 5: Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 2, No. 2, 218, 379. Patent Document 6: Japanese Patent Laid-Open Publication No. Hei No. 2 (8) No. 24716 Patent Document 8 Patent Publication No. 8_〇〇4147 Patent Document 11 Patent Document 12 Patent Document 13 Patent Document 14 Patent Document 15 Patent Document 9: Japanese Patent Laid-Open No. 2001-094128 Patent Literature ίο 〇1_352〇91 Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The first solar cell module has the following problems: Since the A-positive battery unit 100 has a large difference in refractive index from the interface, the first shot cannot be used effectively (incident light 205). . For example, the solar cell of the Shishijing system also has the following problems: Cannot use 8 200847458 27222pif Effectively use light with a wavelength shorter than 400 legs in sunlight, longer than rnn, 'about S6% of solar energy The spectnmi mismatch does not contribute to photoelectric conversion. SUMMARY OF THE INVENTION The present invention has been made in order to solve such problems, and aims to provide a solar-power h module capable of improving power generation efficiency and a wavelength conversion type concentrating light for a solar cell module. membrane. In addition, the object of the present invention is to provide a solar cell module capable of reducing the solar loss caused by the distribution, and to improve the wavelength of the solar cell module and the solar cell module used for the light utilization, in order to solve the above problem. The solar sun contains a plurality of members of the light transmissive layer, and according to the incident light, the solar cell module is set to be the first layer, the second layer, and the light transmissive layer. The m layer 'and each refractive index is set to the first refractive index ηι, the second refractive _ 曰 曰 - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人Converting the two-light film, the wavelength conversion type (four)_refractive index is 16~24 The long conversion type concentrating film contains a fluorescent substance. And for the solar cell module, it is preferred that the wavelength is 400~1200, so that the following formula is used to illuminate 9 200847458 27222pif L number ij (1) L· where / is transmissive Rate, L is the average thickness of the film (_). 5 : 乂好, :, the above-mentioned wavelength conversion type concentrating film, in order to form the above-mentioned white name into H, then the ground is covered with a plurality of fine convex or concave shaped horn cones or cones. . Further, it is preferable that the light-incorporating substance in the wavelength-converting concentrating film absorbs light of 300 to 400 sin, emits light of 400 to the position, and can perform wavelength conversion. ^ That is, the above-mentioned wavelength conversion type concentrating film uses the above-mentioned fluorescent substance to absorb the light of f0·~the surface, and emits the light of the copper-blue leg. Ϊ m grain long-term concentrating concentrating on the wavelength of the position of the nm light guide ^ solar cell unit and the solar power ^ early 7L order photoelectric conversion. Therefore, spectral mismatch can be overcome. The wavelength-converting concentrating film having a micro (four) concavo-convex shape contains a bed material, and therefore, it is possible to form a ruthenium and an early film which are controlled by a condensing film in addition to the above-mentioned patent document. The money long conversion type concentrating m is transferred to step by step to improve the effect. In addition, the directivity of the incident light can be efficiently introduced into the solar cell unit by the directivity of the convex light. = The bright solar cell module can reduce the spectral mismatch [proper knower lost] and can control the advancement of light = light utilization efficiency, thereby improving power generation efficiency. In order to solve the above problem, the solar cell module of the present invention has a wavelength of 10 200847458 27222pif, and the layer has a plurality of sun rays, which are generated by the incident light to generate electricity. Upper: The wavelength conversion type concentrating film used, the incident side of the wavelength conversion type concentrating film for the f group, as the f condensing film of the plurality of light transmissive layers to ===, the incident light is made The entrance pupil is the incident side of the astigmatism light, and the plurality of light transmissions are

ί 率;1 L1:: …第m層’並將各層的各折射 日·^為〈弟、第2折射率^...第瓜折射率、 ,·^成立,上述波長轉換式聚光膜的折射 卞…·〜/ ’且該波長轉換式聚紐包含螢光物質。 士又’幸乂奸的疋,當上述入射光的波長為*⑻〜· _ 二的ί⑵所表示的上述波長轉換式聚光膜的 才不準化及光度a的值為〇· ί以下。 [數2] (2)ί rate; 1 L1:: ...m layer ' and each of the refractions of each layer · ^ is the younger brother, the second refractive index ^... the refractive index of the first melon, , ^ ^ is established, the above wavelength conversion type concentrating film The refraction 卞...·~/ 'and the wavelength conversion type of nucleus contains a fluorescent substance. The 波长 又 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ [Number 2] (2)

L 其中’ T為透射率,L為膜平均厚度(_)。 又’較好的是,上述波長轉換式聚光膜,以於上述入 射光的入射侧無間隙地鋪滿多數個微細的凸形狀或凹形狀 的多角錐或圓錐的方式而形成。 又,較好的是,上収長轉換式聚光膜中所包含的榮 光物質吸收300〜400 _的光,發出4⑻〜腫麵的光, 且可以進行波長轉換。 即,上述波長轉換式聚光膜使用上述螢光物質來吸收 例如300〜400 rnn的光,並發出彻〜12〇〇腿的光。藉 200847458 27222pif it,;上述波長轉換式聚光膜中進行波長轉換,將 ,一〜讓,nm的光導入至太陽電池單元中而使太陽電= 車兀進仃光電轉換。因此,可以克服光譜失配。 本發明的太陽電池模組中形成著如下的波長轉換 ,膜,其中多個透光性層的第i折射率n】、第2折射率η、二 弟m折射率〜滿足的關係 ^ c) 紐層可以自人射光軌射側標記為第U、第=個透 弟m層’而且該些透光性層中的至少!層於二 侧為凹凸形狀,上述波長轉換式聚光膜的折射率^ ^射 ==光物質,因此,可以提高太陽電池:: 螢光物質來吸=======膜利用 nm的光,因此,可 卫毛出400〜;12〇〇 服光譜失配。即,由;^日f的波f轉換。因此,可以克 式聚光膜含有榮光物質,』^^電池模組用波長轉換 控制折射率的構成,本發明的: 聚光膜來 聚光膜可以藉由波長轉換來進用波長轉換式 藉由微細的凹凸形狀來控制光的方^果。此外’可以 的光一併有效地導入至太陽電池單^中’將入射光與發出 【實施方式】 中。 以下 方面表昭圖4 一 的最佳形態。圖2矣:二—方面說明用以實施本發明 表不使用了以石夕基板為材料的太陽電池 12 200847458 27222pif 單元的太陽電池模組的剖面。 該太陽電池模組是蔣 中而發電的太陽電池模組,于光導入至太陽電池單元⑽ 射侧透過保護玻璃20j、j述入射光自入射光205的入 300等多個透光性層:;^ 202、波長轉換式聚光膜 性層,且是具體的—例光性層是表示構成的透光 射侧的保護玻璃201靠前:晉他的=亦可以於較光入 、…、先刖的太除電池模組中幾乎盔μ 膜,於本發明中亦並非 I成十…、玻璃上的抗反射 j卫非义而有玻墦上的抗反射膜。 個面膜是使處於人射光的人射側的― 膜的折二長轉H聚光膜’該波長轉換式聚光 式聚光膜了〇: · 2·4’包含螢光物質且透明。波長轉換 的凹邱以: 面’以無間隙地鋪滿多數個微細 方式而形成’該微細的凹部或凸部各自的 办狀為大致相同形狀的圓錐狀或多角錐狀。 例如’作為本發明中所使用的波長轉換式聚光膜的形 〃、方法,使用真空®合機(laminator),來將半硬化狀態、 光硬化性或熱魏性__至單元上。使賴包含^如 使用有四烧氧基鈦(titanium tetra-alkoxide)的有機_無機 混合材料以及螢光物質,藉此來實現高折射率化以及波長 轉換功能。進而,由於上述膜具有光硬化性或熱硬化性, 故而利用鑄造(cast)法等來將上述膜於聚對苯二甲酸乙 二酯 CPolyethyleneterephthalate,PET)等的基材膜上製成 膜狀’並利用聚丙烯(Polypropylene,PP)等的隔離膜來 13 200847458 27222pif 覆蓋上述膜。 於太陽電池單元100的朵 ^ 光膜300。太陽電池單元1〇 、則貼附著波長轉換式聚 抗反射膜1G4、表面電極、背面基板、η型層、 太陽電池單元上貼附著上^二極、及Ρ +層所構成。於 轉換式聚絲與域轉換絲域·。波長 觸。 太除電池早兀1㈧的抗反射膜104接 η 太陽電池單元UK)是使用了多結晶石夕基板或者單社曰 土板⑽晶體㈣太陽電池單元,例如使用著厚度為= um的ρ型石夕基板。於刮石, 、、、 著11型層。 Ρ —夕基板的表®上均勻地形成 ―文地取^^膜1G4用於防止由波長轉換式聚光膜300所有L where 'T is the transmittance and L is the average film thickness (_). Further, it is preferable that the wavelength conversion type concentrating film is formed so as to be spread over a plurality of fine convex or concave polygonal pyramids or cones without any gap on the incident side of the incident light. Further, it is preferable that the luminescent material contained in the upper-length conversion type concentrating film absorbs light of 300 to 400 Å, emits light of 4 (8) to swollen surface, and can perform wavelength conversion. That is, the wavelength conversion type concentrating film absorbs light of, for example, 300 to 400 rnn using the above-mentioned fluorescent material, and emits light of a length of ~12 〇〇. Borrowing 200847458 27222pif it, wavelength conversion is performed in the above-mentioned wavelength conversion type concentrating film, and light of one to let nm is introduced into the solar cell unit to make solar power = 兀 兀 仃 photoelectric conversion. Therefore, spectral mismatch can be overcome. In the solar cell module of the present invention, a wavelength conversion film having a relationship between an ith refractive index n], a second refractive index η, and a second refractive index of the plurality of light transmissive layers is satisfied. The layer of the new layer can be marked as the Uth, the first and the second layer from the side of the human beam, and at least the light-transmitting layers! The layer has a concave-convex shape on both sides, and the refractive index of the above-mentioned wavelength conversion type concentrating film is reduced to a light substance, so that the solar cell can be improved:: The fluorescent substance is sucked ======= The film utilizes nm Light, therefore, can defend the hair out of 400~; 12 〇〇 service spectrum mismatch. That is, the wave f is converted by ; Therefore, the condensable film can contain a glory material, and the battery module can be controlled by wavelength conversion to control the refractive index. The concentrating film can be used for wavelength conversion to convert wavelength conversion. The effect of the light is controlled by the fine concave and convex shape. Further, 'the light can be efficiently introduced into the solar cell unit', and the incident light is emitted. The following table shows the best form of Figure 4. Fig. 2A: FIG. 2 shows a section of a solar cell module in which the solar cell 12 200847458 27222pif unit is used as a material for the invention. The solar cell module is a solar cell module that is generated by Jiang Zhong, and is introduced into a plurality of light transmissive layers such as a light-transmissive glass 20j, a light incident from the incident light 205, and the like to the solar cell unit (10). ; 202, a wavelength-converting concentrating film layer, and a specific - exemplified light layer is a protective glass 201 that represents the light-transmitting side of the front side of the structure: Jin He = can also be in the light, ..., In addition to the almost helmet μ film in the battery module, it is not in the present invention. The anti-reflection on the glass is an anti-reflection film on the glass. The mask is a film-transfer type H concentrating film which is placed on the person's side of the human light. The wavelength-converting concentrating film 〇: · 2·4' contains a fluorescent substance and is transparent. In the concave portion of the wavelength conversion, the surface is formed by concealing a plurality of fine patterns without a gap, and the respective concave portions or convex portions have a conical shape or a polygonal pyramid shape having substantially the same shape. For example, as a shape and method of the wavelength conversion type concentrating film used in the present invention, a vacuum metal laminator is used to impart a semi-hardened state, a photocurability or a thermal property to the cell. The use of an organic-inorganic hybrid material having a titanium tetra-alkoxide and a fluorescent substance can be used to achieve a high refractive index and a wavelength conversion function. Further, since the film has photocurability or thermosetting property, the film is formed into a film shape by a casting method or the like on a base film such as polyethylene terephthalate (Cpolyethylene terephthalate, PET). The above film was covered with a separator film of polypropylene (PP), etc., 13 200847458 27222pif. The photo film 300 of the solar cell unit 100. The solar cell unit 1A is formed by attaching a wavelength conversion type anti-reflection film 1G4, a surface electrode, a back substrate, an n-type layer, and a solar cell unit to a second electrode and a ruthenium layer. In the conversion type of filament and domain conversion silk domain. Wavelength touch. In addition to the battery early 1 (8), the anti-reflection film 104 is connected to the η solar cell unit UK) using a polycrystalline stone substrate or a single earth plate (10) crystal (4) solar cell unit, for example, a p-type stone having a thickness of um夕 substrate. In the scraping stone, , , , and 11 type layer.表 夕 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 均匀 均匀 均匀 均匀 均匀 均匀 均匀

=集峨,不必要的反射,該抗反射膜戰I 圍的^ 11 N以及氯H所構成的折射率為h8〜2.7的範 。職切膜的财制為%〜= Set, unnecessary reflection, the refractive index composed of ^ 11 N and chlorine H of the anti-reflection film I is a range of h8 to 2.7. The financial system of the job film is %~

可以使用氧化鈦縣作為抗反_1G4。 T 2長轉賊聚光膜是町述方^形成:如上所 intt —個面上’即於單面側_上規則地鋪滿多數 =田的凸形狀或凹形狀的多角錐或圓錐。上述多角錐為 ^相同的形狀。又,上述圓錐亦為大致相同的形狀。上 二早面側300a形成於光入射側(上述入射光2〇5入射的一 =)’光入射侧的相反側3_與太陽電池單元1〇〇的抗反 2 m接觸。又,亦可如上所述,使另一個面無間隙地 與太%電池單元1〇〇的表面的凹凸相吻合。 14 200847458 27222pif 、、又,使波長轉換式聚光膜300的折射率叱如以下所 述。為了減少自所有角度射入的外部光(入射光2〇5)的 反射損失,並有效地將該外部光導入至太陽電池單元 内,波長轉換式聚光膜300的折射率必須高於密封材2〇2 的折射率,且必須低於太陽電池單元1〇〇上的抗反射膜104 的折射率,將上述波長轉換式聚光膜3〇〇的折射率設為1 6 〜2·2,較好的是設為L6〜2.〇。 ϋ…· η 北於Ρ型矽基板的與上述入射側(表面侧)相反的 二面:J形成背面用鋁漿(―麵响),接著於該背面 用鋁水上形成背面電極1〇8。又,於背面侧,鋁漿中的鋁 f背面侧㈣產生反應而形成P+層,從而形成改善發電 月匕力的後表面電場(Back Surface Field,BSF)層109。 即一為了有效地將來自所有角度的入射光導入至太陽電池 :兀内、’,波長轉換式聚光膜3〇〇的頂角狹窄則較為有利。 ^而’當於波長轉換式聚光膜3〇〇與太陽電池單元刚的 二面^存在反射損失時,若頂角過於狹窄,則會導致反射 至外部。為了使反射光被波長轉換式聚光膜 再次反射,並順利地返回至太陽電池單元ι〇〇中,較 頂角為90度。若頂角為9〇度,則考慮到性能及 精度的方面,可以說90度是最佳角度。 根=專利文獻2’底邊的尺寸是將所使用的最短波 =以底&的材料的折射率而得出的值,作為示例 折射率設為2.〇時, 、 才y、太險包池杈組中,上述值為175nm 左右。然而,為了獲得此種微細構造,加工方法亦會受到 15 Ο c 200847458 27222pif 然而,本發明無需此種超料 皮 波長轉換式聚光膜3。。的構造_ 二 的波長轉換式聚光膜_而言,如圖^1= 台座部分302必須與太陽電凹凸部分观。 電池單元1〇0的表面上使用了紋理 冓坆,該、、文理構造的深度為〇〜20 _。另 要求’波長轉換式聚光膜3⑽的本 本的微細凹凸形狀,因此,、a先胺原 組成物。作為波長 基:二射含喊氧 波長轉換式聚先膜3。。二且有為勞了=長轉換⑽ 亦即,波長轉換式聚光膜3⑻是半 溶劑乾斤it _被塗佈至太陽電池單元,並經 全i==:單=換式聚光_可以完 16 200847458 27222pif 若波長轉換式聚光膜300本來為膜狀 離,並進-步對具有波長轉換式聚光膜原_=2剝 狀的模型膜(動i趙m)進行真空疊合,以撕形 藉由模型縣形毅長賴絲域_ 的凸形狀或凹形狀的多角錐或圓錐。首先 細 〇 =,將以規則且無間隙地鋪滿多數個微細凹部或凸:: 方式而形成的模型膜载置於聚光膜300上,4 °勺 空疊合來進行形狀轉印。此後,剝離模型膜二用= WLTltmviolet ’ UV)照射來使聚光膜3⑻硬化。^二 可以不去除模型膜而使該模型膜積層於聚光膜上’、 二下詳細地朗—麵麵用於在聚光膜 凸邱R Π ^地鋪滿多數個的方式而形成微細凹部或 凸口P。圖4疋表不將模型膜3〇1載置於 ^ 300山上的狀態的圖。模型膜301 *於波長轉i ί聚;光 的微細凹部或凸部側3〇〇a處,無間隙地形成著數、 述微細凹部或凸部互補(I間 ^入喊人 數们〃、上 ,部或凹部的膜’且該模型膜成 聚光膜300的凹部或凸部的鑄模。 成波長^換式 膜二::==3°1載置於波長轉換式聚光 、、以使波長㈣式聚光膜3GG硬化。 的構成。二除了模型膜3G1並積層著密封材202 地埋入著波長轉換式聚光膜的凹凸。屬、而热間 27 200847458 27222pif 波長轉換式聚光膜並轉膜’該 划積層於波長轉換式聚光膜·上則*疋使該模型膜 •附於3()1 Μ長轉換式聚光膜300貼 ^®tltm solI^T's%a ::面3,上。上述波長轉換式; 301是:ί上崎,此處繼的模型膜 處,益間隙地^光搞300的微細凹部或凸部側3〇〇a 間隙地完個與上述微細凹部或凸部互補(無 _3〇1祕:玄者的微細凸部或凹部的膜,且該模 .太陽電池μθ漆材作為波長轉換式聚光膜300時,向 縣進行::_f 青漆材’使溶劑乾燥後,利用模型 化,亦;2印:此時,既可以將模型膜剝離後進行硬 二1:附著模型膜的狀態下進行硬化。 成物職予物的硬化方法’既可以預先對該樹脂組 化性。 ,,亦可以預先對該樹脂組成物賦予熱硬 ,用了太陽電池單元100的如圖2所示的太陽電池 18 200847458 27222pif 模組中,例如,當將密封材202設為第】層(保護玻璃 與%封材202 #折射率大致相肖,因此認為保護破璃洲 與密^材202白勺光學性相同),將波長轉換式聚光膜· 。又為第2層,將彳几反射膜1〇4設為第3層,將〇型層川3 ,為第4層,又:將各層的各折射率設為第1折射率\、 第2折射率η2、$ 3折射率巧、帛4折射率^時,使得 Ο 成立。對於作為該些透光性層中的1層的 第2層的波長龍絲光膜3⑻,如上所述,使人射光曰2〇5 :射:3〇()a為凹凸形狀。詳細而言,波長轉換式聚光膜 以、亩滿多數個微細的凸形狀或凹形狀的多角錐或圓錐 形成又’如上所述’將波長轉換式聚光膜300 的折射率η3設為1.6〜2 4。 又,當上述入射光的波長為40〇〜1200 nm時,使波 = 光膜綱的由式⑶所示的標準化吸光度a 的值為0·1以下。 [數3] 。[一 / ⑽],」°“ )⑻Titanium oxide can be used as anti-anti-_1G4. The T 2 long thief concentrating film is formed by the singularity of the singularity: as described above, the intt — face ” is a polygonal or conical shape of a convex or concave shape that is regularly covered on the single-sided side. The above polygonal pyramid has the same shape. Moreover, the above-mentioned cones have substantially the same shape. The upper second surface side 300a is formed on the light incident side (one of the incident light 2〇5 incident), and the opposite side 3_ on the light incident side is in contact with the anti-reverse 2 m of the solar cell unit 1A. Further, as described above, the other surface may be fitted to the unevenness of the surface of the solar cell unit 1 without any gap. 14 200847458 27222pif Further, the refractive index of the wavelength conversion type concentrating film 300 is as follows. In order to reduce the reflection loss of external light (incident light 2〇5) incident from all angles and to efficiently introduce the external light into the solar cell unit, the refractive index of the wavelength conversion type concentrating film 300 must be higher than that of the sealing material. The refractive index of 2〇2 must be lower than the refractive index of the anti-reflection film 104 on the solar cell unit 1〇〇, and the refractive index of the wavelength conversion type light-concentrating film 3〇〇 is set to 16 6 to 2·2, It is preferably set to L6~2. ϋ...· η North side of the 矽-type 矽 substrate opposite to the incident side (surface side): J forms an aluminum paste for the back surface (“surface noise”), and then the back surface electrode 1〇8 is formed on the back surface of the aluminum water. Further, on the back side, the back side (4) of the aluminum f in the aluminum paste reacts to form a P+ layer, thereby forming a back surface field (BSF) layer 109 which improves the power generation force. That is, in order to efficiently introduce incident light from all angles into the solar cell: 兀, ', the apex angle of the wavelength conversion type concentrating film 3 狭窄 is narrow. ^ When the reflection loss is present on the two sides of the wavelength conversion type concentrating film 3 〇〇 and the solar cell, if the apex angle is too narrow, reflection is caused to the outside. In order to reflect the reflected light again by the wavelength conversion type concentrating film and smoothly return to the solar cell unit, the apex angle is 90 degrees. If the apex angle is 9 degrees, considering the performance and accuracy, it can be said that 90 degrees is the best angle. Root = Patent Document 2' The size of the bottom side is the value obtained by using the shortest wave = the refractive index of the material of the bottom & as an example, the refractive index is set to 2. 〇, y, too dangerous In the Baochiyu group, the above value is about 175 nm. However, in order to obtain such a fine structure, the processing method is also subject to 15 Ο c 200847458 27222pif However, the present invention does not require such a super-skin wavelength conversion type concentrating film 3. . The structure _ two wavelength conversion type concentrating film _, as shown in Figure ^1 = pedestal portion 302 must be viewed with the solar electric concave and convex portion. A texture 使用 is used on the surface of the battery unit 〇0, and the depth of the texture structure is 〇~20 _. Further, the original fine concavo-convex shape of the wavelength conversion type concentrating film 3 (10) is required, and therefore, a a pro-amine composition. As the wavelength base: two-shot oxygen-containing wavelength conversion type poly film 3. . Second, there is work = long conversion (10), that is, the wavelength conversion type concentrating film 3 (8) is a semi-solvent dry jin it _ is applied to the solar cell unit, and after the whole i ==: single = change concentrating _ can End 16 200847458 27222pif If the wavelength conversion type concentrating film 300 is originally film-shaped, and step-by-step vacuum lamination of the model film (moving i Zhao m) having the wavelength conversion type concentrating film original _=2 peeling The torsion shape is a polygonal shape or a concave shaped polygonal cone or cone by the model county shape. First, fine 〇 =, a pattern film formed by patterning a plurality of fine recesses or protrusions without a gap is placed on the concentrating film 300, and a 4 ° scoop is superposed to form a shape transfer. Thereafter, the release film 2 was irradiated with = WLTltmviolet 'UV) to harden the light-concentrating film 3 (8). ^2, the model film can be laminated on the concentrating film without removing the model film, and the surface is used to form a fine recess in the manner of concentrating the concentrating film R Π ^ Or the mouth P. Fig. 4 is a view showing a state in which the model film 3〇1 is placed on the mountain of ^300. The model film 301* is fused at a wavelength; at the fine concave portion of the light or at the side of the convex portion 3〇〇a, the number of the fine concave portions or the convex portions is complementary without any gaps. a film of a portion or a recess' and the mold film is a mold of a concave portion or a convex portion of the light-concentrating film 300. The wavelength-changing film 2::==3°1 is placed in a wavelength-converting type concentrating light to make the wavelength (4) The structure of the light-concentrating film 3GG is cured. In addition to the mold film 3G1, the sealing material 202 is laminated with the unevenness of the wavelength-converting light-concentrating film. The heat and the heat are 27 200847458 27222pif wavelength-converting film Transfer film 'This layer is deposited on the wavelength conversion type concentrating film · 疋 该 该 该 模型 • 附 附 附 附 附 附 附 附 附 附 附 附 附 附 附 ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® ® The above wavelength conversion formula; 301 is: ί上崎, here at the model film, the gap is fine, the fine concave portion of the light 300 or the convex side 3〇〇a gap is completed with the above-mentioned fine concave portion or The convex portions are complementary (there is no _3〇1 secret: a film of a fine convex portion or a concave portion of the sinus, and the solar cell μθ paint material is used as the wavelength conversion type concentrating film 300, The prefecture carries out::_f green lacquer material', after the solvent is dried, it is modeled, also; 2: At this time, the model film can be peeled off and hardened under the condition of hard film 1: adhesion of the model film. The curing method of the material may be set in advance for the resin. Alternatively, the resin composition may be thermosetting in advance, and the solar cell 18 of the solar cell unit 100 as shown in FIG. 2 may be used. 200847458 27222pif module For example, when the sealing material 202 is the first layer (the protective glass and the % sealing material 202 # are substantially opposite in refractive index, it is considered that the protection of the glass is the same as that of the dense material 202), and the wavelength is converted. The concentrating film is also the second layer, the 反射 several reflection film 1 〇 4 is the third layer, the 〇 层 layer 3 is the fourth layer, and the refractive index of each layer is set to the first layer. When the refractive index \, the second refractive index η2, the value of the refractive index η2, and the refractive index of the 帛4 are ,4, Ο is established. The wavelength of the long-ray light film 3(8) which is the second layer of the one of the light-transmitting layers is As described above, the human light 曰 2 〇 5 : shot: 3 〇 () a is a concave-convex shape. In detail, wavelength conversion type concentrating The refractive index η3 of the wavelength conversion type concentrating film 300 is set to 1.6 to 2 4 as described above by using a plurality of fine convex or concave polygonal pyramids or cones as described above. When the wavelength is 40 〇 to 1200 nm, the value of the normalized absorbance a shown by the formula (3) of the wave = optical film is 0·1 or less. [3] [1 / (10)], "°") (8)

JL 其中,T為透射率,L為膜平均厚度(^功)。 現就如圖2所示的太陽電池模組的製造進行制。對 理想的是’期望折射率連 卜第2 θ:处所明淺’是指自入射侧起所標記的第 乐2.1 m的編號中較小的編號)—側起逐 。然 而’於用以形成太陽電池單元1〇〇白勺單元步驟中,护成作 為上述第3層的抗反賴1Q4以及料上述第4層的η型 19 200847458 27222pif W娱組步驟中 /¾ y 瓜珉敉上述第3層及上Μ望4爲、吃^ ===)封材搬以及波長轉換 .遍及各層構件的連、i的折因射此率=先前技術,則難以獲得 形成的波長轉換式聚光膜:、與於模組步驟中 〇 ^:;;r 射率n3以下。若於模組步驟 =:的折 ,二====== :的形狀’本發明的尺寸可以為二= 10 //m以上。其原因启认.^ v 丄所兄斤的 率分佈,不如利用幾何光學中;:兒性的等價折射 Cmultipath reflection)〇中所5兄明的先路以及多重反射 如此,本發明的目的在於 組層構造上的光學性界面上依麵於步驟的模 密封材與單元的界面上的反射貝失、及先前技術中的 :^。。_ 導入量 在於^供一種結構,該結構可《使波長轉 20 200847458 27222pif 明在於··藉 =::=ν來使由波麵= Ο ί ,/ 光膜明的特徵在於··可以根據波長轉換式聚 ,敕、土〗~電池單凡100的抗反射膜104此兩者,來 5虫化玻璃201、該強化玻璃2〇1下層的密封材2〇2、 2魏單元内部的η層、ρ層等的折射率。然而,可以 202 Λ,強化玻》璃2〇1、該強化玻璃2〇1下層的密封材 電池單凡内部的η層、Ρ層的中間層即波長轉換 =、’膜3GG與抗反射膜刚來調整折射率,從而容易地 只現上述ni$n2$n3gn4。 ,最簡單地進行考慮,則如以所述。此處,保護玻璃 舁在封材202的折射率亦大致相同,因此認為該保護 火璃201與該密封材2〇2的光學性相同(折射率〜)。又, =吏波長轉換式聚光膜3〇〇的折射率為n2,使抗反射膜1〇4 、十射率為113 ’使η型層的折射率為以時,較理想的是上 返ni、n2、n3、n4滿足下式。 Άλ 田代入大致的具體數值時,則根據η〗与1.5、η4与3.4 來計算出η2〜1·97、η3^2.59。 又,為了進行波長轉換,必須使波長轉換式聚光膜300 21 200847458. 更3 :f光=貝:文將對螢光物質進行敍述。 陽電二元二換,光膜、3。。貼附於太 光膜貼附於太陽電池單元Θ 6疋表不將波長轉換式聚 態的含有榮光物質的高順序的圖°使用半硬化狀 換式聚光膜300。折射顿脂組成物305作為波長轉 Ο t. 物3 〇Ϊ於/:::了悲且含—有螢光物質的高折射率樹脂組成 基鈦的有機無機混合材料來實 化==光IS該: 含有罄朵铷所沾古圖6⑷所不,處於半硬化狀態且 貝、同斤射率樹脂組成物305,夾持於pET膜 :::膜(隔離臈)306。具體的製造處理啊 來覆蓋該高折射率樹脂組成^5利用pp等的隔離膜3〇6 射率;tf6(b)所7F ’當將上述含有縣物質的高折 疊合至太陽電池單元觸上疊合時, 等的隔離膜306之後,將上述高折射率樹脂 機置於太陽電池單元i。。上,並利用真空疊合 再久利用真空疊合機來進行形狀轉印。 22JL where T is the transmittance and L is the average thickness of the film (^ work). Now, the manufacture of the solar cell module shown in Fig. 2 is carried out. Ideally, the 'desired refractive index is connected to the second θ: the shallower position is the smaller of the numbers of the first 2.1 m marked from the incident side). However, in the step of forming the unit cell of the solar cell unit, the anti-reaction 1Q4 as the third layer and the n-type 19 in the fourth layer of the above-mentioned fourth layer are in the process of /3⁄4 y The above-mentioned 3rd layer and the above-mentioned 3rd layer, eat ^ ===) sealing material transfer and wavelength conversion. The connection of the layers of the various layers, the refractive index of i, the rate = the prior art, it is difficult to obtain the formed wavelength Conversion type concentrating film: In the module step, 〇^:;;r rate is less than or equal to n3. If the module step =: fold, two ======: the shape 'the size of the invention may be two = 10 // m or more. The reason for the recognition is that the rate distribution of the v. v 兄 兄 , , , 利用 利用 利用 利用 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何 几何The optical interface on the layer structure corresponds to the reflection of the interface between the mold seal and the unit, and the prior art: ^. . _ The amount of introduction is ^ for a structure, which can make the wavelength turn 20 200847458 27222pif Ming · borrowed =:: = ν to make the wave surface = Ο ί , / The light film is characterized by · · According to the wavelength Conversion type poly, 敕, 〗 〖 ~ battery single 100 anti-reflection film 104 of the two, to 5 worm glass 201, the tempered glass 2 〇 1 lower layer of sealing material 2 〇 2, 2 wei layer inside the Wei unit The refractive index of the ρ layer or the like. However, it can be 202 Λ, reinforced glass 璃 2 〇 1, the tempered glass 2 〇 1 lower layer of sealing material battery, the internal η layer, the middle layer of the Ρ layer is wavelength conversion =, 'film 3GG and anti-reflection film just To adjust the refractive index, it is easy to only present the above ni$n2$n3gn4. The simplest consideration is as described. Here, since the refractive index of the cover glass 202 is also substantially the same, it is considered that the protective glass 201 has the same optical property (refractive index 〜) as the sealing material 2〇2. Further, the refractive index of the 吏 wavelength conversion type concentrating film 3 为 is n2, and the antireflection film 1 〇 4 and the radiance is 113 Å, so that the refractive index of the n-type layer is time-dependent, and it is preferable to return Ni, n2, n3, and n4 satisfy the following formula. When Άλ is substituted into a rough specific value, η2~1·97 and η3^2.59 are calculated from η and 1.5, η4 and 3.4. Further, in order to perform wavelength conversion, it is necessary to make the wavelength conversion type light-concentrating film 300 21 200847458. Further, the light-emitting material will be described. Yangdian binary replacement, light film, 3. . Attached to the solar cell is attached to the solar cell unit. The high-order image containing the luminescent material is not wavelength-converted. The semi-hardened dichroic film 300 is used. Refractive grease composition 305 as a wavelength transition t. 3 〇Ϊ / /:: sad and contains - high refractive index resin with a fluorescent material composed of titanium-based organic-inorganic hybrid material to stabilize == light IS This is a resin composition 305 which is in a semi-hardened state and which is in a semi-hardened state and which is sandwiched between pET film::: film (isolation 臈) 306. The specific manufacturing process covers the high refractive index resin composition ^5 using pp or the like of the separator 3 〇 6 radiance; tf6 (b) 7F 'when the above-mentioned high-folding containing the county material is brought into contact with the solar cell unit At the time of lamination, after the separator 306 is placed, the above-mentioned high refractive index resin machine is placed in the solar cell unit i. . On, and using vacuum lamination, the vacuum laminating machine is used for shape transfer. twenty two

200847458f A I 接著,剝離模型膜301,利用UV照射來使上述含有 螢光物質的高折射率樹脂組成物3〇5硬化。如此,當形狀 轉印結束時,利用光或熱來使半硬化狀態的高折射率樹脂 組成物305硬化。亦可使模型膜3〇1殘留於波長轉換式聚 光膜300上,使上述太陽電池單元1〇〇與上述波長轉換式 聚光膜300夾持於保護玻璃2〇1、密封材2〇2、背膜2〇4 而模組化。 圖6(e)表示自圖6(d)的狀態剝離模型膜301後的狀 悲。亦可於將模型膜301剝離之後,使上述太陽電池單元 100與上述波長轉換式聚光膜300夾持於保護玻璃201、密 封材202、背膜204而模組化。 此時,若使單元的紋理構造的深度為10 Am,使模 型膜凹凸的深度為10 ,則疊合前的聚光膜(半硬化 狀態的高折射率膜)的厚度必須為至少20 //m。若按照 先前說法,則波長轉換式聚光膜300的台座部分302必須 為10 //m,凹凸部303必須為10 //m。本發明中,無需 積極地形成紋理構造,但是於對矽晶錠(Silicon Ingot)進 行的切片(slice)加工中,很多表面伴有凹凸,因此,台 座部分302必須對應於上述凹凸的程度。 其次,就如用作波長轉換式聚光膜300的半硬化狀態 的高折射率樹脂組成物305般的有機-無機混合材料進行 說明。 本發明中,為了獲得高折射率,使用溶膠凝膠法 (Sol-Gel method)來形成有機-無機混合材料。溶膠凝膠 23 200847458 27222pif 法中的必要成分是由 (R])nM-(〇R2)m 所表示的燒氧基金屬,本發明可以將其中的由 Ti — (〇R)4 所表示的四烷氧基鈦用作至少一部分。相應地,Μ 可以是選自 Zn、Zr、a卜 Si、Sb、Be、Cd、Cr、Sn、 Ο200847458f A I Next, the mold film 301 is peeled off, and the high refractive index resin composition 3〇5 containing the above-mentioned fluorescent substance is hardened by UV irradiation. Thus, when the transfer of the shape is completed, the high-refractive-index resin composition 305 in a semi-hardened state is hardened by light or heat. The model film 3〇1 may remain on the wavelength conversion type light-concentrating film 300, and the solar cell unit 1〇〇 and the wavelength conversion type light-concentrating film 300 may be sandwiched between the protective glass 2〇1 and the sealing material 2〇2. The back film is 2〇4 and modularized. Fig. 6(e) shows the state after peeling off the model film 301 from the state of Fig. 6(d). After the mold film 301 is peeled off, the solar cell unit 100 and the wavelength conversion type light-concentrating film 300 may be sandwiched between the cover glass 201, the sealing material 202, and the back film 204 to be modularized. At this time, if the depth of the texture structure of the unit is 10 Am and the depth of the concave and convex of the model film is 10, the thickness of the light-concentrating film before the lamination (high-refractive-index film in a semi-hardened state) must be at least 20 // m. According to the foregoing statement, the pedestal portion 302 of the wavelength conversion type concentrating film 300 must be 10 // m, and the uneven portion 303 must be 10 // m. In the present invention, it is not necessary to form the texture structure actively, but in the slice processing for the Silicon Ingot, many surfaces are accompanied by irregularities, and therefore, the pedestal portion 302 must correspond to the above-described unevenness. Next, an organic-inorganic hybrid material such as a high refractive index resin composition 305 which is used in a semi-hardened state of the wavelength conversion type light-concentrating film 300 will be described. In the present invention, in order to obtain a high refractive index, a Sol-Gel method is used to form an organic-inorganic hybrid material. Sol-gel 23 200847458 The necessary component in the 27222 pif method is an alkoxy metal represented by (R))nM-(〇R2)m, and the present invention can be represented by Ti((R)4) Titanium alkoxide is used as at least a part. Accordingly, Μ may be selected from the group consisting of Zn, Zr, a, Si, Sb, Be, Cd, Cr, Sn, Ο

Ga、Mn、Fe、M〇、V、W以及Ce的金屬。對於R而言: 多個碳原子數為1〜10的尺]以及R2與M鍵結,但各^既 可完全相同,亦可不同。n為〇以上的整數,m為i以上 的整數,n + m等於]y[的原子價(Valence)。當利用溶膠 凝膠法來獲得有機·無機混合材料時,所使用的燒氧基金严 既可以為一種,亦可以為多種。 蜀 為了利用溶膠凝膠法來獲得有機_無機混合材料,於呈 溶液狀的樹脂組成物中添加烷氧基金屬、水、以及酸^ 驗)觸媒,並塗佈於基材上,使溶劑蒸發,並進行或 藉此便可以獲得上述有機錢混合材料。但是,根據_ 擇的烧氧基金屬的反應性,树無需水及/或酸(或驗)觸 媒。又,加熱溫度亦依賴於烧氧基金屬的反應性。對於如 Ti般的反應性高的金屬而言無需觸媒,且加熱溫度可以為 100°c左右的溫度。本發日种,不—定必f (.〇_)的三 、,、,·口構:、要可以只現向折射率化即可。尤其,氧化欽的 三維雜為半導體結構,可以用作光㈣。錢,該結構 於光劣化方面不佳,因J:卜,炎 ^ Αθ rt ^ 口此,為了宅不損壞上述三維結構, 有效的疋與其他烷氧基金屬併用的方法。 24 200847458 27222pif 2002-225133號公報中所 (作為形成聚光膜的凸部 再者,可藉由日本專利特開 揭示的方法等來製作模型膜 的鑄模的模型膜)。 又 錢土^ 种的^物f,可㈣舉稀土類元素 ^ 子或者稀土類元素的有機金屬錯合物 == 質為上述稀土類元素的離子時,可以將 :t ΐ 1匕劑而導入至無機的宿主晶體(host c㈣1)Metals of Ga, Mn, Fe, M〇, V, W, and Ce. For R: a plurality of feet having a carbon number of 1 to 10] and R2 and M are bonded, but each of them may be completely the same or different. n is an integer above 〇, m is an integer greater than i, and n + m is equal to the valence of [y]. When the organic/inorganic hybrid material is obtained by the sol-gel method, the amount of the alkoxy group to be used may be either one type or plural types.蜀 In order to obtain an organic-inorganic hybrid material by a sol-gel method, a metal alkoxide, water, and an acid catalyst are added to a resin composition in a solution form, and applied to a substrate to form a solvent. The above organic money mixed material can be obtained by evaporation, and by or by this. However, depending on the reactivity of the alkoxylated metal selected, the tree does not require water and/or acid (or test) catalyst. Moreover, the heating temperature also depends on the reactivity of the alkoxy metal. For a metal having high reactivity such as Ti, no catalyst is required, and the heating temperature may be a temperature of about 100 °C. This kind of day, not - must be f (. 〇 _) three,,,, · mouth structure:, you can only present the refractive index. In particular, the three-dimensional impurity of the oxidized crystal is a semiconductor structure and can be used as light (four). Money, the structure is not good in terms of photodegradation, because J: Bu, Yan ^ Α θ rt ^ mouth, in order to not damage the above three-dimensional structure, effective bismuth and other alkoxy metal combined method. In the case of the convex portion forming the light-concentrating film, the model film of the mold of the model film can be produced by the method disclosed in Japanese Patent Laid-Open No. Hei. The material f of the money and soil can be (4) the organometallic complex of the rare earth element or the rare earth element == When the substance is the ion of the above rare earth element, it can be introduced as: t ΐ 1匕 agent To inorganic host crystals (host c (four) 1)

物::’、、上述螢光物f為上述稀土類元素的有機金屬錯合 直接使财機金屬錯合物分散至上述高折射樹 脂組成物中。 稀土類兀素有Ce(鈽)、Pr(镨)、Nd(鈥)、pm(鉅)、 (釤)、Eu (銪)、Gd (釓)、Tb ⑷、Dy (鏑)、Ho (欽)'Er(斜)、Tm (铥)、Yb (镱)等。 、一又,本發明中的螢光物質亦可以是以稱為批2形離子 的=素為發光中㈣使晶體基質(吻⑹腺恤)活化的 或者,本發明中的螢光物質亦可以是該些物質的金 氧化物、有機金屬錯合物。該些物質為Qi(銅)、Zn(鋅)、 Ga (鎵)、Ge (鍺)、As (砷)、Ag (銀)、Cd (鎘)、in (銦)、The material::, the fluorescent substance f is an organic metal mismatch of the above rare earth element, and the organic metal complex is directly dispersed in the high refractive resin composition. The rare earth bismuth has Ce (钸), Pr (镨), Nd (鈥), pm (giant), (钐), Eu (铕), Gd (釓), Tb (4), Dy (镝), Ho (Kin ) 'Er (oblique), Tm (铥), Yb (镱), etc. Further, the fluorescent substance in the present invention may also activate the crystal matrix (Kiss (6) gland) in a light source called a batch of 2 ions, or the fluorescent substance in the present invention may also be used. It is a gold oxide or an organic metal complex of these substances. These materials are Qi (copper), Zn (zinc), Ga (gallium), Ge (germanium), As (arsenic), Ag (silver), Cd (cadmium), in (indium),

Sn (錫)、Sb (銻)、Au (金)、Hg (采)、τΐ (蛇)、Pb (錯)、Sn (tin), Sb (锑), Au (gold), Hg (picking), τΐ (snake), Pb (wrong),

Bi (鉍)等。 、又,本發明中的螢光物質亦可為是以稱為過渡金屬離 t的元素為發光中心而使晶體基質活化的物質。或者,本 ^明:的螢光物質亦可以是該些物質的金屬氧化物、有機 金屬錯合物。該些物質為Cr (鉻)、Fe (鐵)、Mn (錳) 25 200847458 27222pif 等。 又,亦可以使用有機螢光物質來作為本發明中的螢光 物質。作為該些螢光物質的例,可以列舉蒽 (fluoranthene )、花(perylene )、吖啶撥(―編 〇腿肛)、 若丹明(rhodamine) 6G、若丹明 b、brim她ulf〇flavine FF、 鹼性黃(basicydl〇w) HG、曙紅(e〇sin)等。 本發明中並不對該些螢光物質進行限定,可以根據目Bi (铋) and so on. Further, the fluorescent substance in the present invention may be a substance which activates the crystal matrix by using an element called a transition metal from t as a luminescent center. Alternatively, the fluorescent substance of the present invention may be a metal oxide or an organic metal complex of the substances. These materials are Cr (chromium), Fe (iron), Mn (manganese) 25 200847458 27222pif and the like. Further, an organic fluorescent substance can also be used as the fluorescent substance in the present invention. Examples of such fluorescent substances include fluoranthene, perylene, acridine ("knot leg anal", rhodamine 6G, rhodamine b, brim her ulf〇flavine FF, basic yellow (basicydl〇w) HG, eosin (e〇sin) and the like. In the present invention, the fluorescent substances are not limited, and

^而廷擇霄光物質。例如,對於上述石夕晶體系太陽電池而 =,由於無法有效地利用太陽光中的波長較400 mn短的 光、及波長較120 nm長的光,因此,較好的是吸收波長 車乂 400 nm短的光,發出4⑻〜的光。可以利用非 專利文獻3中所列舉的Eu(TTA)3phen等作為上述螢光物 質的一例。 曰$、例如關於非晶石夕太陽電池、GaAs太陽電池、CIS太 陽電池、PbS光電轉換裝置、cds光電轉換裝置等,亦可 乂根據該#^置的感度光譜來選擇螢光物質。 、下 方面參照隨附圖式,一方面對實施例進行說^ And Ting chooses twilight matter. For example, for the solar cell of the above-mentioned Shi Xijing system, since the light having a wavelength shorter than 400 mn and the light having a wavelength longer than 120 nm cannot be effectively utilized, it is preferable to absorb the wavelength rut 400. Nm short light, emitting 4 (8) ~ light. An example of the above-mentioned fluorescent substance can be used as Eu(TTA)3phen or the like listed in Non-Patent Document 3. For example, regarding the amorphous quartz solar cell, the GaAs solar cell, the CIS solar cell, the PbS photoelectric conversion device, the cds photoelectric conversion device, or the like, the fluorescent substance may be selected based on the sensitivity spectrum of the device. Referring to the accompanying drawings, the following embodiments describe the embodiments.

貫施例 3利用到此為止所敍述的方法來將波長轉換式聚光 貼附至太陽電池單元上。 單元f迷=2是將波長轉換式聚光膜300貼附至太陽電池 &、’裝入至模組中時的概略圖,且表示不使桓细瞪 301殘留於士此 、土眠 、陽龟池模組内的情形。其中,於圖2中省略 26 200847458 27222pif 了運接用標記線 又 ,圖5是將附有模型膜301的波長棘 圖°即’轉成圖表錢模型膜3G1 的構成 ,構I其中,於該圖5中亦省略接^電池模組 【圖式簡單說明】 接用I §己線。According to the third embodiment, the wavelength conversion type condensing is attached to the solar cell unit by the method described so far. The unit f=2 is a schematic view when the wavelength conversion type concentrating film 300 is attached to the solar cell & and 'loaded into the module, and it means that the 桓 瞪 301 does not remain in the room, and sleeps, The situation inside the Yang turtle pool module. Here, in FIG. 2, 26 200847458 27222pif is omitted, and FIG. 5 is a configuration in which the wavelength of the model film 301 is converted into a graph money model film 3G1. In Fig. 5, the battery module is also omitted (the simple description of the drawing) is connected to the I § line.

Ο- 二”前的太陽電池模組的剖面圖。 二3 θ 最佳形態的太陽電池模t的叫 圖3疋用以說明波長轉換式:、、且U面圖。 圖4是表示將模型膜裁置Y=°:f造, 圖。 先肤上的狀態的剖面 圖5是表示將附有模型犋 元上的太陽電池模組的構成0來先馭貼附於太陽電池單 圖6(0、圖6(b)、圖、;:面圖。 是表示將聚光膜貼附於太陽恭圖6 (d)、圖6 (e) 【主要元件符號說明】 笔’也單元的處理順序的_。 100 :太陽電池單元 101 : p型矽基板 102 :紋理構造 103 : η型層 104 :反射防止層 108 :背面電極 109 : BSF 層 201 :保護玻璃 27 200847458 27222pif 201a :表面 201b :單面 202 :密封材 203 :標記線 * 204:背膜 • 205 ··入射光 300 :波長轉換式聚光膜 ζ\ 300a :單面侧 300b :相反侧 301 :模型膜 302 :波長轉換式聚光膜的台座部分 303 :波長轉換式聚光膜的凹凸部分 304 : PET 膜 305 :高折射率樹脂組成物層 306 : PP 膜 28A cross-sectional view of the solar cell module before the Ο-II. The solar cell module t of the best form of the 2 3 θ is shown in Fig. 3疋 to illustrate the wavelength conversion type: and the U surface view. Fig. 4 shows the model. The film is cut by Y=°:f. Fig. 5 is a cross-sectional view of the state on the first skin. The figure 5 shows the structure of the solar cell module with the model element attached to the solar cell. 0, Fig. 6(b), Fig.;;: face view. It means that the concentrating film is attached to the sun. Figure 6 (d), Fig. 6 (e) [Description of main component symbols] Pen's unit processing sequence 100: solar cell unit 101: p-type germanium substrate 102: texture structure 103: n-type layer 104: anti-reflection layer 108: back electrode 109: BSF layer 201: protective glass 27 200847458 27222pif 201a: surface 201b: single-sided 202 : sealing material 203 : marking line * 204 : back film • 205 · · incident light 300 : wavelength conversion type concentrating film ζ \ 300a : single side 300b : opposite side 301 : model film 302 : wavelength conversion type concentrating film The pedestal portion 303: the concave-convex portion 304 of the wavelength conversion type concentrating film: PET film 305: high refractive index resin composition layer 306: PP film 28

Claims (1)

200847458 27222pif 十、申請專利範圍: 有包含多個透光性層的 上述太陽電池模組的特 1·一種太陽電池模組,其積層 構件而成,且根據入射光來發電, 徵在於: 第i Γ ΐt射光ΐ入射側,將上述多個透光性層設為 弟1層* 2層、…弟爪層,並將各層的各折射去200847458 27222pif X. Patent application scope: A solar cell module having the above-mentioned solar cell module including a plurality of light transmissive layers, which is formed by laminating members and generating electricity according to incident light, is: i Γ ΐt 射 射 ΐ ΐ , , , , , , , , 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 1折射率η】、第2折射率叱、...第m折射率&時卞,:仏 成立,而且上述透光性層中的至少 入射光的人射側為凹凸形狀的波長轉換式聚光膜,】 長轉換式聚辅的折射率為16〜24,且包含螢光物質。 "2.如中請專利範圍第工項所述之太陽電池模組,其中 當上述入射光的波長為4〇〇〜12〇〇 nm時,使由以下的式 ⑷所表示的上毅長轉換式聚光膜的標準化吸光度\ 的值為0·1以下, 夂 [數1] •X/ 其中,丁為透射率,L為膜平均厚度(//m)。 、、3·如申請專利範圍第I項所述之太陽電池模組,其中 上述波長轉換式聚光膜,以於上述人射光的人射侧無間隙 地鋪滿多數個微細的凸形狀或凹形狀的多角錐或圓錐的方 式而形成。 I、4·如申請專利範圍第!項、第2項或第3項所述之太 陽電池模組,其巾上述波長轉赋聚光财所包含的螢光 物貝可以進行波長轉換,並且吸收3〇〇〜4〇〇nm的光,發 29 200847458 27222pif 出400〜1200 nm的光。 5.-種太陽電池模組用波長轉換 =組積層有包含多個透光性層的 在於: 、•電池板組用波長轉換式聚光膜的特徵 Ο 中的:的入射側,作為上述多個透光性層 、夕層而使用的波長轉換式聚光膜, 的入^上述入射光的入射侧為凹凸形狀,且自上述入射来 ί入射側,將上述多個透紐層設為第1層、第=射先 =層,絲各層的騎射率㈣第 ,…第m折射率nm時, 述波長轉換式聚光膜的折 ^ 上 質。 J外耵卞馮I.6〜2·4,且包含螢光物 6斗如申請專利範圍第5項所述之 =聚細,其心御罐^ 4=用2 2由吸上梅趣式聚光膜的 [數2] (5) 其中,T為透射率,L為膜平均厚度 7·如申請專利範圍第5項所述之太恭 =式聚光膜,其中上述波長轉換式聚 ==側無間隙地鋪滿多數個微細的 的夕角錐或圓錐的方式而形成。 ^料狀 30 200847458 27222pif 8.如申請專利範圍第5項、第6項或第7項所述之太 陽電池模組用波長轉換式聚光膜,其中上述波長轉換式聚 光膜中所包含的螢光物質可以進行波長轉換,並且吸收 300〜400 nm的光,發出400〜1200 nm的光。1 refractive index η], second refractive index 叱, ... mth refractive index &卞; 仏 is established, and at least the incident side of the light-transmitting layer has a concave-convex shape Concentrating film,] Long-conversion poly-compound has a refractive index of 16 to 24 and contains a fluorescent substance. "2. The solar cell module according to the above-mentioned patent scope, wherein when the wavelength of the incident light is 4 〇〇 to 12 〇〇 nm, the length of the expression represented by the following formula (4) is The standardized absorbance of the conversion type concentrating film has a value of 0·1 or less, 夂 [number 1] • X/ where D is the transmittance and L is the average film thickness (//m). The solar cell module according to claim 1, wherein the wavelength conversion type concentrating film is configured to cover a plurality of fine convex shapes or concaves without gaps on the human light side of the human light. Formed in the form of a polygonal pyramid or cone. I, 4· If you apply for a patent scope! The solar cell module according to Item 2, wherein the fluorescent material contained in the wavelength-converted light source of the towel can be wavelength-converted and absorb light of 3 〇〇 4 〇〇 nm. , issued 29 200847458 27222pif out of 400 ~ 1200 nm light. 5.-A wavelength conversion for a solar cell module = a laminated layer including a plurality of light transmissive layers: • The characteristics of the wavelength conversion type concentrating film for the panel group Ο: the incident side, as the above The light-transmissive layer and the wavelength-converting concentrating film used for the gradation layer have an uneven shape on the incident side of the incident light, and the plurality of permeable layers are set from the incident side The first layer, the first = first layer = the layer, the emissivity of each layer of the wire (four), ..., the mth refractive index nm, the refractive index of the wavelength conversion type concentrating film. J 外耵卞冯 I.6~2·4, and contains the fluorescent material 6 bucket as described in the fifth paragraph of the patent application scope = polyfine, its heart canister ^ 4 = use 2 2 by sucking on the fun [2] (5) where T is the transmittance and L is the average thickness of the film. 7. The concentrating film of the type described in the fifth paragraph of the patent application, wherein the above wavelength conversion type poly = = The side is formed by covering a plurality of fine pyramids or cones without any gaps. The wavelength conversion type concentrating film for a solar cell module according to the fifth aspect, the sixth aspect or the seventh aspect, wherein the wavelength conversion type concentrating film is included in the above-mentioned wavelength conversion type concentrating film Fluorescent materials can be wavelength converted and absorb light from 300 to 400 nm to emit light from 400 to 1200 nm. 3131
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