200845874 ' I - f 九、發明說明： [發明所屬之技術領域] 本發明係有關於一種電路板結構及其製法，更詳而言 之，係關於一種具散熱結構之電路板及其製法。 [先前技術] 隨著半導體封裝技術的演進，半導體裝置 ^ (Semiconductor device)已開發出不同的封裝型態，其中球 、柵陣列式（Ball grid array，BGA)係為一種先進的半導體封 € 裝技術，其特點在於採用一封裝基板來安置半導體晶片， 並於該封裝基板背面形成複數柵狀陣列排列之錫球 (Solder ball)，以於相同單位面積中可具有更多輸入/輸出 連接端（I/O connection)，以符合高度集積化（Integration)之 半導體晶片所需，並藉由該些錫球以電性連接至外部之電 子裝置。 惟傳統半導體封裝結構是將半導體晶片黏貼於基板頂 面，再進行打線接合（wire bonding)，或將半導體晶片以 覆晶接合（Flip chip)方式與基板電性連接，再於基板之背面 植以錫球以進行電性連接。雖可達到高腳數的目的，但是 在更高頻使用時或高速操作時，其將因導線連接路徑過長 而產生電氣特性之效能無法提昇，而有所限制，另外，因 傳統封裝需要多次的連接介面，相對地增加生產製造成本。 ： 此外，隨著電子產業的蓬勃發展，電子產品亦逐漸邁 入多功能、南性能的研發方向。為滿足半導體封裝件南積 集度（Integration )以及微型化（Miniaturization )的封裝 6 110225 200845874 品求，半導體晶片^^$ 不及時將半導體日熱量㈣顯增加，如 導雕曰y以日日片產生之熱量有效逸散，將嚴重縮短半 ^日曰片之性能及壽命；且在半導體晶片進入90n 更距之製程，於線路密集區更容易產生局部熱點 PQt)’導致半導體W燒毀或運作的不穩定。 向習知排除半導轉θ y ，…、， 日日片於運作時之局部熱點，係於承 載ό亥半導體晶片之電路 板宁‘置冷熱結構，以將局部熱點 的熱肖b傳導至外部進行散熱。 请茶閱第1圖，係於一電路板1〇中設有與線路無電性 、曾接，導熱結構lla，llb’而該導熱結構lia，uwf、如電鏡 =通扎（PTH)或盲孔（via)，其中該導熱結構Ua之一端形成 有係如錫球之散熱結構12，而在該導熱結構爪外露之表 面形成有係如焊錫球之導熱^件13，而該導熱元件Η俘 供接置於一半導體晶片14之熱點(H〇tSp〇tmi，使該容易 產生南熱之熱點141所產生的熱能直接藉由導熱元件13、 導熱結構llb，lla及散熱結構12之傳導而將熱能直接排 除，以避免該半導體晶片14之高密度佈線所造成的熱點 141於瞬間產生高熱，導致該半導體晶片14無法正常運作 或才貝壞的情況。 惟，該導熱結構lla，llb係為該電路板1〇之線路製程 中，於形成線路之製程中同時製成，使該導熱結構Ua,ub 係與線路為相同的材質，如一般之銅金屬；雖然銅金屬之 導熱性高，但無法將該半導體晶片14之熱點141於瞬間產 生的高熱快速傳導及排除，而對於未來更高密度佈線且運 110225 7 200845874 作速度更快之半導體晶片Η將無法因應。 利於=體1:提出：種具有散熱結構之電路板結構，以 ' θθ之局部熱點進行散熱，並可避免上述習知 技術之種種缺失，實忐邕 典 ^ [發明内容] 已成爲目Μ界亟待克服之難題。 -也一f j 土述白知技術之缺點’本發明之主要目的係在提 “ L·、一種具散熱結構之雷愁^ 傅之包路成及其製法，得以提高傳熱速 ,度’以耠幵散熱效果。 二4 (目的’本發明提供—種具散熱結構之電路 ，，：匕括：核心板，係具有第一表面及第二表面，於該 Γ 第二表面之部分區域分別具有複數第-及第二 Γ返、1亚於4核"板中具有複數第-通孔以貫通該第-及 2:二；第一蓋板及第二蓋板，係分別結合在該核心板 =表面及第二表面，使該第—通孔、第—及第二流道 m一迴路流道，其中該第-蓋板及第二蓋板係分別 =-孟屬板及第二氧化金屬㈣合組成，且該第二氧化全 中具有至少-凹口以露出部份該:屬：：二金屬板 孟屬板表面，該凹口並對 應該核心板之第一通孔，以於該第一蓋板位於該迴路流道 表面的，置構成一吸熱部’而於該第二蓋板構成一散熱 部，該第-及第二蓋板中未覆蓋於迴路流道位置之 '具有線路層，於該第-蓋板、核心板及第：蓋板中具有至 > 一貝牙之電鍍導通孔，以電性連接該第一及第二笔板丄 面之線路層；以及工作流體，係填充於該迴路流道中反衣 】]〇225 8 200845874 » 該第一及第二蓋板之其中一者具有至少一填充口，且 該填充口與迴路流道相通’並於該填兄口中形成有基孔材 料，以封住該填充口。 該核心板係為氧化鋁板之絕熱材料；該工作流體係為 曱醇或純水；該金屬板係為銅金屬板，而該第二氧化金屬 板係為氧化鋁板之絕熱材料。 . 該第一流道係供該工作流體為液態之毛細現象回流管 •道，而該第二流道之管徑係大於該第一流道，且係供該工 4 作流體為蒸汽之流通管道，且該第一流道之管徑約為100 // 至 2000 //。 該第一蓋板及第二蓋板外露之表面具有一絕緣保護 層，該絕緣保護層具有開孔以分別露出該吸熱部及散熱 部，於該吸熱部及散熱部表面分別形成有一導熱元件，藉 由該導熱元件以供接置於一半導體晶片之熱點。 或該第一蓋板外露表面具有一線路增層結構，該線路 增層結構中具有導電結構電性連接該第一蓋板表面之線路 層，以及導熱結構接置於該吸熱部，而該第二蓋板外露表 面具有一線路增層結構，該線路增層結構中具有導電結構 電性連接該第二蓋板表面之線路層，以及導熱結構接置該 散熱部，該線路增層結構表面復包括有熱接墊，該熱接墊 ’係接置該導熱結構，且該線路增層結構表面復包括有絕緣 ^保護層，該絕緣保護層具有開孔以露出該熱接墊，於該熱 接墊表面形成有導熱元件，藉由該導熱元件以供接置於一 半導體晶片之熱點。 9 110225 200845874 本發明復提俣一種具散熱結構之電路板之製法，係包 括：提供一核心板、第一及第二蓋板，其中該核心板具有 第一表面及第二表面，於該第一表面及第二表面分別具有 複數第一及第二流道，並於該核心板中具有複數第一通孔 以貫通該第一及第二流道，該第一蓋板及第二蓋板係分別 由一金屬板及第二氧化金屬板壓合組成，且該第二氧化金 _屬板具有至少一凹口以露出部份該金屬板表面，該凹口並 對應該核心板之第一通孔；將該第一及第二蓋板分別置於 該核心板之第一表面及第二表面並壓合以構成一載板，使 該第一通孔、第一及第二流道構成至少一迴路流道，且該 第一蓋板中對應該第一通孔之凹口的位置構成一吸熱部， 而該第二蓋板中對應該第一通孔之凹口的位置構成一散熱 部；於該第一及第二蓋板中未覆蓋於迴路流道表面之的金 屬板具有線路層，並於該第一蓋板、核心板及第二蓋板中 形成至少一貫穿之電鍍導通孔，以電性連接該第一及第二 蓋板表面之線路層；於該第一蓋板中形成至少一填充口， 使該填充口與迴路流道相通；藉由該填充口以將該迴路流 道抽成真空；於該真空的迴路流道中充填工作流體；以及 於該填充口中形成有塞孔材料。 該核心板之製法係包括：提供一第一氧化金屬板；於 該第一氧化金屬板之第一表面及第二表面分別形成有一第 :一阻層，於該第一阻層中形成有第一開口以露出部份之第 一氧化金屬板表面；進行姓刻製程移除該第一開口中之第 一氧化金屬板表面，以於該第一氧化金屬板之第一表面及 10 110225 200845874 第二表面形成該第一流法 於該第一氧化八严如丄 弟一机逼；移除該第一阻層； L匕33L屬板衣面形成一望_ 中形成有篦_ Μ 1 —阻層，於該第二阻層 二開口中之笛卜 乳化金屬板表面；於該第 一及第二流道· U 成邊罘一通孔以貫通該第 上一道，以及栘除該第二阻層。 該第一及第二蓋板之 6曰 ，該金屬板之-表面 Γ 括：提供該金屬板；於 ，金屬板外露之表面形成—第三》屬板；於該第二氧化 有複數第三開口以露出部份：第：：於該第三阻層中形成 該第三開口中之 * _ 氣化金屬板表面；移除 部份該金屬板之弟：二化金屬板以形成凹口，並露出 孔；=及移除該第三阻層Γ凹口係對應該核心板之第一通 蓋板、核心板及笫一：衣面形成该線路層，以及於該第-於該第―罢才反tr 該電錢導通孔之方法，係包括： 孔；於該第_、#_一乐一I板中形成有至少一第二通 ^ 一盖板及繁-、s β + 於該導電層表 乐—通孔表面形成一導電層； 電鍍導通孔；於該金2屬層’亚於該第二通孔中形成該 阻層中形成有第：二蜀面形成-第四阻層，且該第四 、第四開口中之金屬：口：：出部份該金屬層表面；移除該 阻層以於該第__導书層及金屬板；以及移除該第四 :該第一氧化入二二蓋板表面形成該線路層。 板係為銅金屬板，：t為，化1呂板之絕熱材料，該金屬 熱材料；該工作流體^ 一氧化金屬板係為氧化鋁板之絕 W版’丁、為甲醇或純水。 110225 11 200845874 該第一蓋板及第二蓋板外露之表面形成有一絕緣保護 層，該絕緣保護層形成有開孔以各別露出該吸熱部及散熱 部，於該吸熱部及散熱部表面形成有導熱元件，藉由該導 熱元件以供接置於一半導體晶片之熱點。 該第一蓋板外露表面形成有一線路增層結構，該線路 增層結構中具有導電結構以電性連接該第一蓋板表面之線 #路層，以及導熱結構接置於該吸熱部，於該第二蓋板外露 表面形成有一線路增層結構，該線路增層結構中具有導電 摹 結構以電性連接該第二蓋板表面之線路層，以及導熱結構 接置該散熱部；該些線路增層結構表面具有至少一熱接 墊，於該線路增層結構表面形成有一絕緣保護層，該絕緣 保護層中形成有開孔以露出該熱接墊，於該熱接墊表面形 成有一導熱元件，藉由該導熱元件以供接置於一半導體晶 片之熱點。 該第一及第二蓋板之其中一者形成有至少一填充口， 且該填充口與迴路流道相通，且於該填充口中形成有塞孔 材料。 該第一流道係供該工作流體為液態以毛細現象之回流 管道，而該第二流道之管徑係大於該第一流道，且係供該 工作流體為蒸汽之流通管道，且該第一流道之管徑約為 100 β ^ 2000 β。 ： 本發明之具散熱結構之電路板及其製法，主要係於核 心板之第一表面及第二表面分別形成有第一及第二流道， 且於該核心板中形成有複數個第一通孔以貫通該第一及第 12 110225 200845874 * . I > 二流道，並於該核心板表面壓合有第一及第二蓋板，使該 第一通孔、第一及第二流道構成該迴路流道，於該迴路流 道中充填有工作流體，藉由該工作流體於該迴路流道中產 生相變化以進行吸熱及散熱，俾達快速吸熱及散熱，而以 遠高於習知銅材料傳熱的速度進行吸熱及散熱，得供該半 導體晶片快速排除熱點於瞬間所產生的熱量5以避免造成 t該半導體晶片於運作時無法正常運作或損壞的情況。 ,[實施方式] 以下之實施例係進一步詳細說明本發明之觀點，但並 非以任何觀點限制本發明之範疇。 請參閱第2A至2H圖，第3A至3D圖以及第4A至 4K圖，其中該第2A至第2H圖係詳細說明本發明之核心 板製法，該第3 A至3D圖係詳細說明本發明之蓋板製法， 而該第4A至4K圖係詳細說明本發明之具有散熱結構之電 路板之製法剖視示意圖。 首先，請參閱第2A至2H圖，以及第2H’圖之核心板 製法。 如第2A圖所示，提供一第一氧化金屬板20，該第一 氧化金屬板20係為氧化鋁板之絕熱材料，該第一氧化金屬 板20具有相對應之第一表面20a及第二表面20b。 • 如第2B圖所示，於該第一氧化金屬板20之第一表面 '20a及第二表面20b分別形成有一第一阻層21。 如第2C圖所示，於該第一阻層21中形成有複數第一 開口 210以露出部份之第一氧化金屬板20表面。 13 110225 200845874 如第2D圖所二、# 中之部份第一氣1:尸進洲 -之第-表面：:屬Λ2〇表面，以於該第-氧化金屬被 道加及第二流道：弟。二衣面鳥分別形成至少-第-流 如弟2Ε圖所示，接著移除該 如第2F圖所示， 1廣21。 -$ - m Μ ^ ;〜弟氧化金屬板20表面形成— 弟—阻層22,於該第二阻層22中m… .以露出部份之篦卜 /成啕叙數弟一開口 220 丨切之弟一氣化金屬板20表面。 μ扣圖所示’於該第二開口 2 屬板20中形成複數第一通孔 ♦…上一乐一虱化至 及第二流道202。 以貝逋該第一流道201 如弟2H及211，同^ -200845874 'I-f IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a circuit board structure and a method of manufacturing the same, and more particularly to a circuit board having a heat dissipation structure and a method of fabricating the same. [Prior Art] With the evolution of semiconductor packaging technology, semiconductor devices have been developed in different package types, in which a ball grid array (BGA) is an advanced semiconductor package. The technology is characterized in that a semiconductor substrate is arranged by using a package substrate, and a plurality of grid arrays of solder balls are formed on the back surface of the package substrate to have more input/output terminals in the same unit area ( I/O connection) to meet the requirements of a highly integrated semiconductor wafer, and electrically connected to the external electronic device by the solder balls. However, in the conventional semiconductor package structure, the semiconductor wafer is adhered to the top surface of the substrate, and then wire bonding is performed, or the semiconductor wafer is electrically connected to the substrate by flip chip bonding, and then implanted on the back surface of the substrate. The solder balls are electrically connected. Although it can achieve the goal of high number of feet, when it is used at a higher frequency or at a high speed, it will not be able to improve the performance of the electrical characteristics due to the long connection path of the wires, and there is a limit, and in addition, the conventional package requires more The secondary connection interface increases the manufacturing cost relatively. In addition, with the rapid development of the electronics industry, electronic products have gradually entered the direction of multi-functional and south-performance research and development. In order to meet the semiconductor package's South integration and miniaturization package 6 110225 200845874, the semiconductor wafer ^^$ does not increase the semiconductor daily heat (4) in time, such as the guide 曰 y to the Japanese film The generated heat is effectively dissipated, which will seriously shorten the performance and life of the half-day film; and when the semiconductor wafer enters the 90n-long process, it is more likely to generate local hot spots in the densely-lined area, resulting in semiconductor W burning or operating. Unstable. Excluding the semi-conducting θ y ,..., the local hot spot of the daily film in operation, is based on the circuit board carrying the semiconductor chip, to heat the local hot spot b to the outside. Cool down. Please read the first picture, which is provided in a circuit board 1〇 with no electricity and connection, the heat conduction structure lla, llb' and the heat conduction structure lia, uwf, such as electron microscope = pass (PTH) or blind hole (via), wherein one end of the heat conducting structure Ua is formed with a heat dissipating structure 12 such as a solder ball, and a heat conducting member 13 such as a solder ball is formed on the exposed surface of the heat conducting structure claw, and the heat conducting element is captured The heat source (H〇tSp〇tmi) is placed on a semiconductor wafer 14 so that the heat generated by the heat-producing hot spot 141 is directly transferred by the conduction of the heat-conducting element 13, the heat-conducting structure 11b, 11a and the heat-dissipating structure 12 It is directly excluded to avoid the hot spot 141 caused by the high-density wiring of the semiconductor wafer 14 from generating high heat in an instant, resulting in the semiconductor wafer 14 not working properly or being damaged. However, the heat conducting structure 11a, 11b is the circuit. In the circuit process of the board 1 ,, it is made simultaneously in the process of forming the line, so that the heat conducting structure Ua, ub is the same material as the line, such as ordinary copper metal; although the copper metal has high thermal conductivity, it cannot be The semiconductor wafer The hot spot 141 of 14 is rapidly conducted and eliminated by the high heat generated in an instant, and the semiconductor wafer with higher density wiring and transporting 110225 7 200845874 will not be able to cope with it in the future. Convinced = body 1: proposed: a heat dissipation structure The circuit board structure uses the local hotspot of 'θθ to dissipate heat, and can avoid various defects of the above-mentioned conventional techniques. The actual content of the invention [the invention] has become a difficult problem to be overcome in the field of vision. Disadvantages of Known Technology 'The main purpose of the present invention is to mention "L·, a package of Thunder and Fu with a heat dissipation structure and its manufacturing method, to improve the heat transfer rate, and to reduce the heat dissipation effect. (Properly provided by the present invention - a circuit having a heat dissipating structure, comprising: a core plate having a first surface and a second surface, wherein the second surface of the second surface has a plurality of - and a second a first sub-via hole having a plurality of first-through holes for penetrating the first and second: second; the first cover and the second cover are respectively coupled to the core plate=surface and the second surface To make the first through hole, the first and a two-channel m-loop flow passage, wherein the first cover plate and the second cover plate are respectively composed of a combination of a -mon plate and a second metal oxide (four), and the second oxidation has at least a notch to expose the portion The genus:: the surface of the two metal plate Meng board, the notch and the first through hole of the core plate, so that the first cover plate is located on the surface of the circuit flow path, and constitutes a heat absorbing portion' The second cover plate defines a heat dissipating portion, and the first and second cover plates have a circuit layer not covering the position of the circuit flow path, and have the same in the first cover plate, the core plate and the first cover plate > a plated through hole of a beech tooth to electrically connect the circuit layer of the first and second pen board faces; and a working fluid is filled in the circuit channel of the reverse clothing]] 〇225 8 200845874 » The first One of the first and second cover plates has at least one filling port, and the filling port communicates with the return flow path and a base hole material is formed in the filling port to seal the filling port. The core plate is a heat insulating material of the alumina plate; the working flow system is decyl alcohol or pure water; the metal plate is a copper metal plate, and the second oxidized metal plate is a heat insulating material of the alumina plate. The first flow channel is configured to supply the working fluid as a liquid capillary flow return pipe, and the second flow path has a larger diameter than the first flow path, and is configured to supply the fluid as a steam circulation pipe. And the diameter of the first flow channel is about 100 // to 2000 //. The exposed surface of the first cover and the second cover has an insulating protective layer, the insulating protective layer has openings for respectively exposing the heat absorbing portion and the heat dissipating portion, and a heat conducting component is respectively formed on the surface of the heat absorbing portion and the heat dissipating portion. The heat conducting component is used to connect to a hot spot of a semiconductor wafer. Or the exposed surface of the first cover has a line build-up structure, the circuit has a conductive structure electrically connected to the circuit layer of the first cover surface, and the heat conductive structure is connected to the heat absorption portion, and the first The exposed surface of the two cover plates has a line build-up structure, the line build-up structure has a conductive structure electrically connecting the circuit layer of the second cover surface, and the heat-conducting structure is connected to the heat-dissipating portion, and the line build-up structure surface is complex Including a thermal pad, the thermal pad is connected to the heat conducting structure, and the surface of the circuit build-up structure includes an insulating protective layer, the insulating protective layer has an opening to expose the thermal pad, and the heat is The surface of the pad is formed with a heat conducting element, and the heat conducting element is connected to a hot spot of a semiconductor wafer. 9 110225 200845874 The invention provides a method for manufacturing a circuit board having a heat dissipation structure, comprising: providing a core board, first and second cover plates, wherein the core board has a first surface and a second surface, The first surface and the second surface respectively have a plurality of first and second flow paths, and the plurality of first through holes are formed in the core plate to penetrate the first and second flow paths, the first cover and the second cover Separatingly composed of a metal plate and a second metal oxide plate, and the second gold oxide plate has at least one notch to expose a portion of the surface of the metal plate, the notch and the first of the core plate The first and second cover plates are respectively disposed on the first surface and the second surface of the core plate and are pressed to form a carrier plate, so that the first through hole, the first and second flow paths are configured At least one circuit flow path, and a position corresponding to the notch of the first through hole in the first cover plate constitutes a heat absorbing portion, and a position of the second cover plate corresponding to the notch of the first through hole constitutes a heat dissipation a portion of the first and second covers that are not covered by the surface of the circuit runner The slab has a circuit layer, and at least one through-plated via hole is formed in the first cover, the core plate and the second cover to electrically connect the circuit layer of the first and second cover surfaces; Forming at least one filling port in the first cover plate to make the filling port communicate with the circuit flow path; the filling port is used to draw the circuit flow path into a vacuum; filling the working circuit in the vacuum circuit flow path; A plug material is formed in the filling port. The method for manufacturing the core plate includes: providing a first metal oxide plate; forming a first: a resist layer on the first surface and the second surface of the first metal oxide plate, and forming a first layer in the first resistive layer An opening to expose a portion of the surface of the first oxidized metal sheet; removing a surface of the first oxidized metal sheet in the first opening to form a first surface of the first oxidized metal sheet and 10 110225 200845874 Forming the first flow method on the second surface is performed by the first oxidizing method; removing the first resist layer; and forming a 篦 Μ 1 - resist layer in the 匕 L L L 形成 形成And forming a through hole in the first and second flow paths, to penetrate the first one, and removing the second resist layer. 6第一 of the first and second cover plates, the surface of the metal plate includes: providing the metal plate; forming a third plate on the exposed surface of the metal plate; and having a third portion in the second oxidation Opening to expose a portion: a:: forming a surface of the third opening in the third opening layer; removing a portion of the metal plate: forming a metal plate to form a notch, And exposing the hole; = and removing the third resist layer, the recess is corresponding to the first through cover of the core plate, the core plate and the first one: the clothing surface forms the circuit layer, and in the first - the first The method for turning on the hole of the electric money includes: a hole; at least one second cover plate and a complex-, s β + are formed in the first _, #_一乐一I board Conductive layer surface - a conductive layer is formed on the surface of the via hole; a via hole is formed; and a second: a second germanium layer is formed in the resist layer formed in the second via hole And the metal in the fourth and fourth openings: a port: a portion of the surface of the metal layer; removing the resist layer for the first __ book layer and the metal plate; Removing the fourth: the first oxide is formed into twenty-two lens surface of the wiring layer. The plate system is a copper metal plate, and t is a heat insulating material of the first plate, the metal heat material; the working fluid is an aluminum oxide plate, which is a nickel plate or a pure water. 110225 11 200845874 The exposed surface of the first cover plate and the second cover plate is formed with an insulating protective layer, and the insulating protective layer is formed with openings for respectively exposing the heat absorbing portion and the heat dissipating portion, and forming on the surface of the heat absorbing portion and the heat dissipating portion There is a heat conducting element through which the heat conducting element is attached to a hot spot of a semiconductor wafer. The exposed surface of the first cover plate is formed with a line build-up structure, the line build-up structure has a conductive structure to electrically connect the line #路层 of the first cover surface, and the heat conductive structure is connected to the heat absorption portion. The exposed surface of the second cover is formed with a line build-up structure, the line build-up structure has a conductive 摹 structure to electrically connect the circuit layer of the second cover surface, and the heat conductive structure connects the heat dissipation portion; the lines The surface of the build-up structure has at least one thermal pad, and an insulating protective layer is formed on the surface of the circuit build-up structure, and an opening is formed in the insulating protective layer to expose the thermal pad, and a heat conducting component is formed on the surface of the thermal pad The heat conducting component is used to connect to a hot spot of a semiconductor wafer. One of the first and second cover plates is formed with at least one filling port, and the filling port is in communication with the circuit flow path, and a plug hole material is formed in the filling port. The first flow channel is a return pipe for the working fluid to be in a liquid state, and the pipe diameter of the second flow channel is larger than the first flow channel, and the working fluid is a steam circulation pipe, and the first flow is The pipe diameter is about 100 β ^ 2000 β. The circuit board with a heat dissipation structure of the present invention and the method for manufacturing the same are mainly formed on the first surface and the second surface of the core board, wherein the first and second flow paths are respectively formed, and a plurality of first ones are formed in the core board The through hole penetrates the first and the 12th 110225 200845874 * . I > two flow paths, and the first and second cover plates are press-fitted on the surface of the core plate to make the first through hole, the first and second flow The circuit constitutes the circuit flow channel, and the circuit flow channel is filled with a working fluid, and the working fluid generates a phase change in the circuit flow path for heat absorption and heat dissipation, so as to quickly absorb heat and dissipate heat, which is much higher than the conventional copper. The heat transfer rate of the material absorbs heat and dissipates heat, so that the semiconductor wafer can quickly eliminate the heat generated by the hot spot in an instant 5 to avoid causing the semiconductor wafer to fail to operate or be damaged during operation. [Embodiment] The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention in any way. Please refer to FIGS. 2A to 2H, FIGS. 3A to 3D and FIGS. 4A to 4K, wherein the 2A to 2H drawings illustrate the core plate manufacturing method of the present invention, and the 3A to 3D drawings illustrate the present invention in detail. The cover plate method, and the 4A to 4K drawings illustrate a schematic cross-sectional view of the circuit board having the heat dissipation structure of the present invention. First, please refer to Figures 2A through 2H and the core plate method of Figure 2H'. As shown in FIG. 2A, a first oxidized metal plate 20 is provided, which is an insulating material of an alumina plate, and the first oxidized metal plate 20 has a corresponding first surface 20a and a second surface. 20b. • As shown in FIG. 2B, a first resist layer 21 is formed on the first surface '20a and the second surface 20b of the first metal oxide plate 20, respectively. As shown in Fig. 2C, a plurality of first openings 210 are formed in the first resist layer 21 to expose portions of the surface of the first oxidized metal plate 20. 13 110225 200845874 As part of the 2D map, the first part of the first gas 1: the corpse into the continent - the surface -: Λ 2 〇 surface, so that the first - oxidized metal is added and the second flow channel :younger brother. The two coat birds respectively form at least the first-stream as shown in Fig. 2, and then remove the one as shown in Fig. 2F, 1 wide 21. -$ - m Μ ^ ; ~ The surface of the oxidized metal plate 20 is formed - the brother - the resist layer 22, in the second resistive layer 22 m .... to expose the part of the 篦 / / 啕 数 数 数 一 一 一 一 一 一 开口 220 220 220 The younger brother cuts the surface of the metal plate 20. In the second opening 2, the plurality of first through holes ♦ are formed in the second opening 2 to the second flow path 202. Take the first flow channel 201 such as brother 2H and 211, with the same -
成一核心板20,。圖所不，移除該第二阻層L俾以製 接著請參閱第3A圖至3D 法。 口以及罘3D，圖之蓋板製 如第3 Α圖所示，掉徂一 於該金屬板23a之一：面為鋼金屬之金屬板〜^ 金屬板23b。 "面升/成一係為氧化紹板之第二氧化 -开^、弟犯圖所不，於該第二氧化金屬板23b外霞之表 .田形成一第三阻層24，於該 卜路之表 三開口 240以露出部份之第二;^且層24中形成有複數第 '如第π圖所示，移除C板23b表面。 ^ , 抄系乐二開口 240中之部伶μ 一 氧化金屬板23b以形成凹 习罘一 部份表面，且該凹D23〇b/fr露 屬板〜之 230b‘對應該核心板20,之第一通孔 Π0225 14 200845874 203 〇 如第3D及3D’圖所示，移除該第三阻層24。 請參閱第4Α至4Κ圖，以及第4Κ，圖之具有散熱結構 之電路板之製法。 如第4Α圖所示，提供一前述製程之第一及第二蓋板 23’，23”，且將該第一及第二蓋板23’，23”分別置於該核心板 ^ 20’之第一表面20a及第二表面20b。 如第4B圖所示，壓合該第一、第二蓋板23’，23”及核 心板20’以構成一載板2，並使該第一及第二蓋板23 %23” 之凹口 230b對應該核心板20,之第一通孔203，使該第一 通孔203、第一及第二流道201，202構成至少一迴路流道 2a;其中該第一通孔203、第一流道201及第二流道202 所構成之迴路流道2a係位於絕熱材料之氧化銘板中，且該 第一流道201之管徑約為100//至2000 //，係供作為液態 流之毛細現象的回流管道，而該第二流道202管徑大於第 一流道201，係供作為蒸汽流管道。 如第4C圖所示，於該第一蓋板23’、核心板20’及第 二蓋板23”中形成有至少一第二通孔2b。 如第4D圖所示，於該第一、第二蓋板23’，23”及第二 通孔2b表面形成有一導電層25。 如第4E圖所示，於該導電層25表面形成一金屬層 ’ 26,並於該第二通孔2b中形成一電鍍導通孔231。 如第4F圖所示，於該金屬層26表面形成一第四阻層 27,且該第四阻層27中形成有複數第四開口 270以露出部 15 110225 200845874 份之金屬層26表面。 如第4G圖所示，移除該第四開口 270中之金屬層26、 導電層25及金屬板23a。 如第4H圖所示，移除該第四阻層27以於該第一及第 二蓋板23’，23”表面分別形成一線路層232。 如第41圖所示，該第一蓋板23’或第二蓋板23”中形 二成有至少一填充口 2 3 3，使該填充口 2 3 3與迴路流道2 a相 通。 如第4J圖所示，藉由該填充口 233以將該迴路流道 2a抽成真空，並於該真空的迴路流道2a中充填係為曱醇 或純水之工作流體，且於該填充口 233中形成有塞孔材料 234，以將該工作流體密封在該迴路流道2a中；且該第一 蓋板23’中對應該第一通孔203之凹口 230b的位置構成一 吸熱部2c，而該第二蓋板23”中對應該第一通孔203之凹 口 230b的位置構成一散熱部2d。 如第4K圖所示，於該載板2之第一蓋板23’及第二蓋 板23”表面分別形成有一絕緣保護層28，該絕緣保護層28 具有開孔280以露出該吸熱部2c及散熱部2d，且於該吸 熱部2c及散熱部2d表面分別形成有導熱元件30以供接置 一半導體晶片31之熱點311。 ' 另請參閱第4K’圖，於該第一蓋板23’外露表面形成有 • 一線路增層結構29，該線路增層結構29中具有導電結構 291以電性連接該第一蓋板23’表面之線路層232，以及導 熱結構292接置於該吸熱部2c;又於該第二蓋板23”外露 16 110225 200845874 表面形成有一線路增層結構29，，該線路增層結構29,中具 有導電結構29 i，以電性連接該第二蓋板23，，表面之線路層 232 ’以及導熱結構292,接置該散熱部2d;該些線路增^ 結構29,29’表面具有至少―熱接塾別，^，，且於該些^ 路增層結構2 9,2 9，表面分別形成有一絕緣保護層一〜 28,28’，該絕緣保護層28,28,中形成有開孔⑽肩，以 二分^露出該熱接墊293,293，，於該熱接墊293,293，表面形 ，成名一導熱兀件30，藉由該導熱元件3〇以供接置於該虫 導體晶片31之熱點311。 遠半導體晶片31局部所產生的高熱得藉由該導孰元 件=經該線路增層結構29中之導熱結構292傳送至該迴 路流道2a之吸熱部2c’使該迴路流道&中之工作流體吸 熱膨脹變相以產生蒸汽流，經由該第一通孔2〇3及第二流 道202流至該迴路流道2a之散熱部％，以將熱能傳遞至 該散熱部2d進行放熱，該工作流體經放熱而冷卻，由墓汽 流變相成液態流，且經由該第—流道2〇1藉由毛細現象以 回流至吸熱部2e’使該王作流體產生相變化以循環吸熱及 放熱，即將該半導體晶片31局部的熱點311所產生的敎能 快速進行散熱，以避免造成該半導體晶片3ι j 11 致然法正常運作甚至損壞。 , 上述^第—流道201及第二流道202係分別提供該工 '作流體之蒸汽流及液態流之通道，且該工作流體之流動方 向僅為示例性說明，得依實際電路設計的需要作反方向之 流動設計；且該供蒸汽流之通道的孔徑係大於該供回流之 110225 17 200845874 液態流的孔徑，使該供蒸汽流之管道的孔徑較大以提俣蒸 汽流之流動，又該供液態流回流之管道較小，使該液態流 藉由毛細管作用回流至該吸熱部2 c，俾利用工作流體之相 變化以循環散熱。 本發明復提供一種具散熱結構之電路板，係包括：核 心板20’，係具有第一表面20a及第二表面20b，於該第一 二表面20a及第二表面20b之部分區域分別具有複數第一流 道201及第二流道202,並於該核心板20’中具有複數第一 f 通孔203以貫通該第一及第二流道201，202;第一蓋板23’ 及第二蓋板23”，係分別結合在該核心板20’之第一表面 20a及第二表面20b，使該第一通孔203、第一及第二流道 201，202構成至少一迴路流道2a，其中該第一蓋板23’及第 二蓋板23”係分別由一金屬板23a及第二氧化金屬板23b 壓合組成，且該第二氧化金屬板23b位於該核心板20’之 第一及第二表面20a，20b，又該第二氧化金屬板23b中具有 至少一凹口 230b以露出部份該金屬板23a表面，該凹口 230b並對應該核心板20’之第一通孔203，以於該第一蓋 板23’位於該迴路流道2a表面的位置構成一吸熱部2c，而 於該第二蓋板23”構成一散熱部2d，該第一及第二蓋板 23’，23”中未覆蓋於迴路流道2a位置之金屬板23a具有線 '路層232，於該第一蓋板23’、核心板20’及第二蓋板23” '中具有至少一貫穿之電鍍導通孔231，以電性連接該第一 及第二蓋板23’，23”表面之線路層232;以及工作流體，係 填充於該迴路流道2a中。 18 110225 200845874 該第一蓋板23’或第二蓋板23”具有至少一填充口 233，使該填充口 233與迴路流道2a相通，且於該填充口 233中具有塞孔材料234。 該核心板20’係為絕熱材料之氧化鋁板；該第一及第 —盍板23’，23”之金屬板23a係為銅金屬板，而該第二氧化 金屬板23b係為絕熱材料之氧化鋁板；該工作流體係為曱 醇或純水。 ，該第一蓋板23,及第二蓋板23”表面分別形成有一絕 緣保護層28，該絕緣保護層28具有開孔28〇以露出該吸 熱^ 2c及散熱部2d，且於該吸熱部2c及散熱部2d表面 分別形成有導熱元件30以供接置一半導體晶片3ιInto a core board 20,. If not, remove the second resist layer L俾. Please refer to the 3A to 3D method. Port and 罘3D, the cover of the figure is as shown in Fig. 3, and is detached from one of the metal plates 23a: a metal plate of a steel metal surface ~ a metal plate 23b. "Face rise/conformity is the second oxidation of the oxidation plate - open ^, the brother of the map is not, in the second oxide metal plate 23b outside the table of the sky. The field forms a third resistance layer 24, in the The third opening 240 of the road is to expose the second portion of the portion; and the plurality of layers 24 are formed in the layer 24 as shown in FIG. π to remove the surface of the C plate 23b. ^ , copying the portion of the opening 240 of the second opening 240 to the surface of the concave metal sheet 23b to form a concave portion of the surface, and the concave D23〇b/fr exposed plate ~ 230b' corresponds to the core plate 20, The first through hole Π 0225 14 200845874 203 removes the third resist layer 24 as shown in FIGS. 3D and 3D'. Refer to Figures 4 to 4 and Figure 4 for a circuit board with a heat dissipation structure. As shown in FIG. 4, the first and second covers 23', 23" of the foregoing process are provided, and the first and second covers 23', 23" are respectively placed on the core plate 20' The first surface 20a and the second surface 20b. As shown in FIG. 4B, the first and second cover plates 23', 23" and the core plate 20' are press-fitted to form a carrier plate 2, and the first and second cover plates are recessed 23% 23". The port 230b corresponds to the first through hole 203 of the core plate 20, and the first through hole 203, the first and second flow paths 201, 202 constitute at least one circuit flow path 2a; wherein the first through hole 203, the first through hole The circuit flow path 2a formed by the first-stage channel 201 and the second flow channel 202 is located in the oxidation plate of the heat insulating material, and the diameter of the first flow channel 201 is about 100// to 2000 //, which is used as a liquid flow. The capillary flow backflow pipe, and the second flow passage 202 has a larger pipe diameter than the first flow passage 201, and is supplied as a steam flow pipe. As shown in FIG. 4C, at least one second through hole 2b is formed in the first cover 23', the core plate 20', and the second cover 23". As shown in FIG. 4D, in the first A conductive layer 25 is formed on the surface of the second cover 23', 23" and the second through hole 2b. As shown in FIG. 4E, a metal layer '26 is formed on the surface of the conductive layer 25, and a plating via 231 is formed in the second via hole 2b. As shown in FIG. 4F, a fourth resist layer 27 is formed on the surface of the metal layer 26, and a plurality of fourth openings 270 are formed in the fourth resist layer 27 to expose the surface of the metal layer 26 of the portion 15 110225 200845874. As shown in Fig. 4G, the metal layer 26, the conductive layer 25, and the metal plate 23a in the fourth opening 270 are removed. As shown in FIG. 4H, the fourth resist layer 27 is removed to form a circuit layer 232 on the surfaces of the first and second covers 23', 23" respectively. As shown in FIG. 41, the first cover The 23' or the second cover plate 23" is formed in the form of at least one filling port 233, so that the filling port 233 is in communication with the circuit flow path 2a. As shown in FIG. 4J, the circuit flow path 2a is evacuated by the filling port 233, and a working fluid which is sterol or pure water is filled in the vacuum circuit flow path 2a, and the filling is performed. A plug material 234 is formed in the port 233 to seal the working fluid in the circuit flow path 2a; and a position of the recess 230b corresponding to the first through hole 203 in the first cover plate 23' constitutes a heat absorbing portion. 2c, and the position of the second cover 23" corresponding to the recess 230b of the first through hole 203 constitutes a heat dissipating portion 2d. As shown in FIG. 4K, the first cover 23' of the carrier 2 and An insulating protective layer 28 is formed on the surface of the second cover 23 ′′, and the insulating protective layer 28 has an opening 280 for exposing the heat absorbing portion 2 c and the heat dissipating portion 2 d , and heat is formed on the surface of the heat absorbing portion 2 c and the heat dissipating portion 2 d respectively. The component 30 is used to connect a hot spot 311 of a semiconductor wafer 31. Referring to FIG. 4K', the exposed surface of the first cover 23' is formed with a line build-up structure 29 having a conductive structure 291 for electrically connecting the first cover 23 a circuit layer 232 of the surface, and a heat conducting structure 292 are disposed in the heat absorbing portion 2c; and a surface layering structure 29 is formed on the surface of the second cover plate 23" exposed on the surface of the 11012225 200845874, the line layering structure 29, The conductive structure 29 i is electrically connected to the second cover 23, the surface circuit layer 232 ′ and the heat conducting structure 292 are connected to the heat dissipating portion 2 d; the surface forming structures 29, 29 ′ have at least “ The thermal contact layer, ^, and the surface of the build-up structure 2 9, 2 9, respectively, is formed with an insulating protective layer - 28, 28', the insulating protective layer 28, 28, formed with an opening (10) The shoulder is exposed to the hot pad 293, 293, and the surface of the hot pad 293, 293 is named as a heat conducting member 30, and the heat conducting member 3 is connected to the hot spot of the insect conductor chip 31. 311. The high heat generated locally by the far semiconductor wafer 31 is obtained by the guiding element = via the line The heat conducting structure 292 in the layer structure 29 is transferred to the heat absorbing portion 2c' of the circuit flow path 2a, so that the working fluid in the circuit flow path & absorbs heat and expands to generate a steam flow through the first through hole 2〇3 and The second flow path 202 flows to the heat dissipating portion % of the circuit flow path 2a to transfer heat energy to the heat dissipating portion 2d for heat release. The working fluid is cooled by exothermic heat, and the tow gas flows into a liquid flow, and through the first The flow channel 2〇1 causes a phase change of the king fluid by the capillary phenomenon to return to the heat absorbing portion 2e' to cyclically absorb heat and release heat, that is, the heat generated by the local hot spot 311 of the semiconductor wafer 31 can be quickly dissipated to avoid The semiconductor wafer 3 ι j 11 is caused to operate normally and even damaged. The above-mentioned first-channel 201 and the second flow channel 202 respectively provide a channel for the steam flow and the liquid flow of the fluid, and the working fluid The flow direction is only an exemplary description, and the flow design in the opposite direction is required according to the actual circuit design; and the aperture of the channel for supplying steam flow is larger than the aperture of the liquid flow for the reflow 110225 17 200845874, The diameter of the pipe for supplying the steam flow is larger to enhance the flow of the steam flow, and the pipe for returning the liquid flow is smaller, so that the liquid flow is returned to the heat absorbing portion 2 c by capillary action, and the working fluid is utilized. The present invention provides a circuit board having a heat dissipation structure, comprising: a core board 20' having a first surface 20a and a second surface 20b, and the first surface 20a and the second surface 20b Each of the regions has a plurality of first flow channels 201 and second flow channels 202, and has a plurality of first f through holes 203 in the core plate 20' to penetrate the first and second flow paths 201, 202; The plate 23' and the second cover plate 23' are respectively coupled to the first surface 20a and the second surface 20b of the core plate 20', so that the first through hole 203, the first and second flow paths 201, 202 are configured. At least one circuit flow channel 2a, wherein the first cover plate 23' and the second cover plate 23" are respectively press-fitted by a metal plate 23a and a second metal oxide plate 23b, and the second oxidized metal plate 23b is located at the same First and second surfaces 20a, 20b of the core plate 20', and the second gold oxide The sub-plate 23b has at least one notch 230b to expose a portion of the surface of the metal plate 23a, and the notch 230b corresponds to the first through hole 203 of the core plate 20', so that the first cover 23' is located in the circuit The position of the surface of the flow path 2a constitutes a heat absorbing portion 2c, and the second cover plate 23" constitutes a heat dissipating portion 2d, and the first and second cover plates 23', 23" are not covered by the position of the circuit flow path 2a. The metal plate 23a has a wire 'layer 232, and has at least one through-plated via 231 in the first cover 23', the core plate 20' and the second cover 23"' to electrically connect the first and The circuit layer 232 of the surface of the second cover 23', 23"; and the working fluid are filled in the circuit flow path 2a. 18 110225 200845874 The first cover 23' or the second cover 23" has at least one filling opening 233, such that the filling opening 233 communicates with the return flow path 2a, and has a plug material 234 in the filling opening 233. The core plate 20' is an alumina plate of a heat insulating material; the metal plate 23a of the first and first jaw plates 23', 23" is a copper metal plate, and the second metal oxide plate 23b is an alumina plate of a heat insulating material. The workflow system is sterol or pure water. The surface of the first cover plate 23 and the second cover plate 23" are respectively formed with an insulation protection layer 28 having an opening 28 to expose the heat absorption portion 2c and the heat dissipation portion 2d, and in the heat absorption portion 2c and the surface of the heat dissipating portion 2d are respectively formed with a heat conducting member 30 for attaching a semiconductor wafer 3
Oil “ 或該第一 盍板23’外露表面形成有 … 琛峪增層結構 ，該線路增層結構29中具有導電結構291 蓋板-表面之線路層232,以及導熱結構= =匕I:獨第二蓋板23’，外露表面形成有-線路 :::“籌2 9二該線路增層結構2 9，中具有導電結構2 9!, r生連接该第二蓋板23”表面之線路層攻，以及士 置該散熱部2d;該些線路增層結構29,29，表= (熱接墊293,293,，且於該些線路增層結構 二T:成工一絕緣保護層28,28,，該_^^ 说293 t成Λ開孔2δ0,2δ0’以分別露出該熱接塾 3〇，V由:二Γ、接1”93,293,表面形成有-導熱元件 曰由心熱S件3G以供接置於該半導體晶片31之熱 110225 19 200845874 點 311 〇 本發明之具散+ 心板之第-表面及第：？…板及其製法，主要係於核 且於該核心板中妒成t回刀別形成有第一及第二流道， 二流道，並於該核心板：數個第一通孔以貫通該第-及第 成該载板，並使該第面屡合有該第—及第二蓋板以構 流道，於該迴路流道；=有：：：第二流道構成該迴路 該導熱元件，或者上t 熱使該吸熱部接置 + 亥線路增層結構之導熱結構，並經 墊接置該導熱元件，使該導熱元件接置該半導體 日日片之熱點，俾於該半導#曰 ^ 月邻古却日日片運作恰，該熱點所產生的 局β同熱經由導熱元件、線路增層結構之 士 熱部對該工作流體進行加埶 於:、：’…吸 發而相變化成為蒸汽流二由熱部受熱蒸 經由該散熱部進行冷卻，使該工 …σΡ, g 、',一山一 作L粗囚散熱而冷卻成液 一亚涇由该乐一流道回流至受熱部，如此循環使該工 作流體產生反覆的相變化以進行吸熱及散熱，俾達快速吸 熱及散熱，而以遠高於f知銅材料傳熱的速度進行吸^ 散熱’得供該半導體晶片快速排除熱點於瞬間所產執 量’以避免造成該半導體晶片於運作時無法正“ ^ 壞的情況。 〜卞氧谓 上述實施例僅例示性說明本發明之原理及其功效， 非用於限制本發明。任何熟習此項技藝之人士均可在不^ 背本發明之精神及範疇下，對上述實施例進行修飾與=廷 】10225 20 200845874Oil "or the exposed surface of the first raft 23' is formed with a 琛峪-layered structure having a conductive structure 291 cover-surface circuit layer 232 in the build-up structure 29, and a heat-conducting structure ==匕I: alone The second cover plate 23' has an exposed surface formed with a line:: "2:2, the line build-up structure 2, 9 has a conductive structure 2 9!, r is connected to the surface of the second cover 23" Layer attack, and the heat dissipating portion 2d; the line build-up structures 29, 29, table = (hot pads 293, 293, and in the line build-up structure two T: a work-insulation protection layer 28, 28 , _ ^ ^ said 293 t into the opening 2δ0, 2δ0' to expose the thermal interface 3〇, V by: two turns, connected 1" 93, 293, the surface is formed with - heat conduction element 曰 from the heart heat S 3G is used to connect the first surface and the first surface of the present invention with the heat of the semiconductor wafer 31, 110225 19 200845874, 311, and the method for manufacturing the same, mainly in the core and in the core board. The first and second flow paths are formed, and the first flow path is formed on the core plate: a plurality of first through holes for penetrating the first and the first carrier plates, and the first surface is repeated The first and second cover plates are combined to form a flow path in the circuit flow path; =::: the second flow path constitutes the heat conduction element of the circuit, or the upper heat is used to connect the heat absorption portion to the +H line The heat-conducting structure of the layered structure is connected to the heat-conducting element via a pad, so that the heat-conducting element is connected to the hot spot of the semiconductor day-to-day film, and the hot spot is operated by the semi-conducting The generated β-same heat is applied to the working fluid via the heat-conducting element and the hotline of the line build-up structure to:: '...suck and change the phase to become the steam stream 2 and the hot part is heated and steamed through the heat sink. Cooling, so that the work ... σ Ρ, g, ', one mountain and one for the heat of the coarse prisoner to cool into a liquid 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾 泾Heat absorption and heat dissipation, the heat absorption and heat dissipation are fast, and the heat dissipation is much higher than the heat transfer rate of the copper material, so that the semiconductor wafer can quickly eliminate the hot spot in the instant to avoid causing the semiconductor wafer to be Can't be "^ bad feelings when working The above-mentioned embodiments are merely illustrative of the principles of the present invention and its effects, and are not intended to limit the present invention. Any person skilled in the art can omit the spirit and scope of the present invention. The above embodiment is modified with =Ting]10225 20 200845874
* > I 變。因此，本發明之權利保護範圍，應如後述之申請專利 範圍所列。 [圖式簡單說明] 第1圖係為習知電路板中設有導熱結構以對半導體晶 片之熱點進行局部散熱之剖視示意圖； 第2A至2H圖係為本發明之核心板製法之剖視示意 •圖， 第2H’圖係第2H圖之俯視圖示意圖； 第3 A至3D圖係為本發明之蓋板製法之剖視示意圖； 第3D’圖係第3D圖之底視圖示意圖； 第4A至4K圖係為本發明之具有散熱結構之電路板之 製法剖視示意圖；以及 第4K’圖係為第4K圖之另一實施例。 [主要元件符號說明] 導熱結構 13、30 導熱元件 141、311 熱點 20 第一氧化金屬板 20b 第二表面 202 第二流道 2 載板 2b 第二通孔 2d 散熱部 21 110225 10 電路板 11a、11b、292、292 12 散熱結構 14、31 半導體晶片 20’ 核心板 20a 第一表面 201 第一流道 ;203 第一通孔 2a 迴路流道 2c 吸熱部 200845874 21 第一阻層 210 第一開口 22 第二阻層 220 第二開口 23， 第一蓋板 23，， 第二蓋板 230b 凹口 231 電鍍導通孔 232 線路層 ZD D 填充口 234 塞孔材料 23a 金屬板 23b 第二氧化金屬板 24 第三阻層 240 第三開口 25 導電層 26 金屬層 27 第四阻層 270 第四開口 28、 28’ 絕緣保護層 280 ^ 280’ 開孔 29、 29’ 線路增層結構 291、 291’ 導電結構 293 、293’ 熱接墊 22 110225* > I change. Therefore, the scope of protection of the present invention should be as set forth in the scope of the patent application to be described later. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing a heat conducting structure in a conventional circuit board for locally dissipating heat of a semiconductor wafer; FIGS. 2A to 2H are cross-sectional views of the core board method of the present invention. 2D to 3D are schematic cross-sectional views of the cover method of the present invention; 3D' is a bottom view of the 3D diagram; 4A 4K is a schematic cross-sectional view of a circuit board having a heat dissipation structure of the present invention; and FIG. 4K' is another embodiment of FIG. 4K. [Main component symbol description] Thermal conductive structure 13, 30 Thermal conductive element 141, 311 Hot spot 20 First oxide metal plate 20b Second surface 202 Second flow path 2 Carrier 2b Second through hole 2d Heat dissipation portion 21 110225 10 Circuit board 11a, 11b, 292, 292 12 heat dissipation structure 14, 31 semiconductor wafer 20' core board 20a first surface 201 first flow path; 203 first through hole 2a circuit flow path 2c heat absorption portion 200845874 21 first resistance layer 210 first opening 22 Second resist layer 220 second opening 23, first cover plate 23, second cover plate 230b notch 231 plated via hole 232 circuit layer ZD D filling port 234 plug material 23a metal plate 23b second metal oxide plate 24 third Resistor layer 240 third opening 25 conductive layer 26 metal layer 27 fourth resist layer 270 fourth opening 28, 28' insulating protective layer 280 ^ 280' opening 29, 29' line build-up structure 291, 291' conductive structure 293, 293' thermal pad 22 110225