TW200844497A - Color filter and method of manufacturing the same, and solid-state image pickup element - Google Patents

Abstract

The present invention provides a method of manufacturing a color filter, including: forming a first color pattern in a repeating pattern on a support; forming, on the support, a second color pattern in a repeating pattern in regions where the first color pattern is not formed; removing at least one portion of one of the first color pattern and the second color pattern by dry-etching, the portion being in a region where a third color pattern is to be formed; and forming, on the support, the third color pattern in the region where the portion of one of the first color pattern and the second color pattern has been removed. The present invention also provides a color filter manufactured by the method, and a solid-state image pickup element using the color filter.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color filter and a method of manufacturing the color filter, and a solid-state imaging element using the color filter. [Prior Art] In recent years, as a method of manufacturing a color filter, a lithography method has been used in consideration of manufacturing cost and ease of manufacture. The lithography method refers to a method in which a radiation-sensitive composition (such as a color hardening composition) is coated on a substrate by a spin coater, a roll coater, or the like, and dried to form a coating film; the coating film is subjected to pattern exposure and development. And baking to form a color pixel, and repeating this cycle of operation for various colors, thereby manufacturing a color filter. The lithography method achieves high positional accuracy and has been widely used as a method for manufacturing color displays for large screens and color filters for high resolution displays. A known technique for lithography uses a negative photosensitive composition in which an alkali-soluble resin is used in combination with a photopolymerizable monomer and a photopolymerizable initiator (for example, see Japanese Patent Application Laid-Open (Jp-A) No. 2-181704, 2-199403, 5-273411, and 7-140654) The general focus of the method of fabricating a conventional color filter by lithography is described herein with reference to Figures 3 2 A to 3 6 B. As shown in Figs. 32A and 32B, the colored negative-type hardenable composition is coated on the support 1 by a spin coater or the like to form a first color layer 42 °. After the front baking, the first color layer is subjected to light. The cover 47 is exposed and patterned (i.e., the first color pixel formation region 44 of the first color 200844497 color layer is exposed to ultraviolet light) as shown in Figs. 33A and 33B. The unnecessary areas 46 in the first color layer are then removed by development processing, and then baked, thereby forming the first color pixels 48 as shown in Figs. 34A and 34B. In addition, by repeating the same procedure as the first color pixel, the second color pixel 50 shown in FIGS. 35A and 35B and the third color pixel 52 shown in FIGS. 36A and 36B are formed, thereby forming color filter. sheet. In the conventional color filter manufacturing method by the lithography method, as shown in Fig. 36A, the occurrence of the problem occurs in the area where the color pixel corners are concentrated to form the region 54 where the color pixels are not formed. There is also a problem that the desired film thickness is not obtained for each color pixel. Further, the film thickness of the region where the color pixels are in contact with each other is not formed as intended (i.e., the problem of the region where the color pixel film thickness is thinned near the boundary of the color pixel, as shown in Fig. 3B), and the like. These improvements are limited, although they have been optimized for mask deviation and the like, and the curing efficiency of the colored curable composition is improved when exposed to a light source. Further, although a technique of embedding a second color pixel or the like by a heat flow (heavy flow) at the time of thermosetting is known (for example, JP-A Nos. 2006-2673 5 2 and 2 0 06-2 92 8 42), this technology tends to It is affected by the properties and method conditions of the colored curable composition used after the formation of the second color pixel, and there is, for example, a problem that the heat distribution of the support is reflected by its embedding property. Further, in the liquid crystal display device or the solid-state imaging device, the reduction in the pixel size has progressed, and it is necessary to reduce the size of the color filter. In particular, with the recent miniaturization of solid-state photographic elements, it is necessary to make the resolution of the resolution less than 2 0 micron high resolution technology, but the resolution of the conventional lithography method 200844497 has reached the limit. Therefore, the issue of lithography is becoming more and more prominent. It has proposed a technique using a dye as a technique for further miniaturizing a color filter and realizing a high-resolution color filter for a solid-state photographic element. However, a dye-containing hardenable composition is generally concerned with, for example, light resistance, film formation, or spectroscopy. The property of the change in the permeability characteristics is inferior to that of the pigment. Further, in particular, since a film thickness of 1.0 μm or less is required in manufacturing a color filter for a solid-state photographic element, it is necessary to add a large amount of coloring agent to the curable composition, thereby causing various problems including patterns. Significant difficulty in formation, such as insufficient adhesion of the substrate, insufficient hardening force, or dye leakage in the exposed area. In addition, contrary to the method of manufacturing a color filter by lithography, a dry etching method has been known for several years as an effective method for forming a relatively thin film having a high-definition pattern. Dry etching has been conventionally used as a method of forming a substantially rectangular pattern. Further, a pattern forming method using a combination of a lithography method and a dry etching method has been disclosed (for example, see JP-A No. 2 0 0 1 - 2 4 9 2 1 8), although it is possible to borrow JP-A. The technique described in the patent No. 2001-249218 forms a first color pixel into a rectangular form, and the formation of the second and third color pixels is limited by the performance of the conventional photosensitive coloring composition, and there are still problems attached to the lithography method. . Therefore, when using the lithography method, it is necessary to maintain the difference in the solubility properties of the composition due to development exposure while increasing the concentration of the colorant, so the technical barrier 200844497 is extremely high. As described above, in the conventional method of manufacturing a color filter, the pattern size which can be formed has a limit (lower limit). SUMMARY OF THE INVENTION The present invention has been accomplished in view of the above circumstances, and provides a method of fabricating a color filter that solves pattern formation limitations and that can form a smaller pattern. The present invention also provides a color filter having substantially rectangular color pixels. The present invention also provides a solid-state image capturing element having excellent color reproduction power. The inventors have discovered that when a repeating pattern (e.g., a stripe pattern) is first formed and then becomes a spacer pattern to form a color pixel, it can be formed with a color pixel having a more rectangular cross section than when the spacer pattern is directly formed to form a color pixel. . That is, according to a first aspect of the present invention, there is provided (1) a method of manufacturing a color filter comprising: (a) forming a first color pattern in a repeating pattern on a support; (b) on the support, at Forming a second color pattern in a repeating pattern without forming a region of the first color pattern; (removing at least a portion of one of the first color pattern and the second color pattern by dry saturation, the portion is intended to form a third color pattern And (d) forming, on the support, a third color pattern in a repeating pattern in a region where one of the first color pattern and the second color pattern has been removed. 200844497 In accordance with the second aspect of the present invention, In the method of the item 1), the first color pattern and the second color pattern are each strip-shaped. According to the third aspect of the invention, in the method of the item (1), the first color pattern is formed by any of the following (1) A method comprising forming a first color layer on a support, exposing the first color layer, and developing the exposed product; and (2) a method comprising forming a first color layer on the support, using The photoresist forms light on the first color layer a pattern, and a method of dry etching a first color layer using a photoresist pattern as an uranium reticle. According to a fourth aspect of the invention, in the method of (1), the second color pattern is by the following method ( 1), or a method comprising at least one of the following methods (2) and (3): (1) a method comprising forming a second color layer on a support forming a first color pattern, and exposing the second color layer And a method of developing; (2) a method comprising: forming a second color layer on the support forming the first color pattern, forming a photoresist pattern on the second color layer using the photoresist, and using the photoresist pattern as the etching light a method of dry etching a second color layer; and (3) a method comprising forming a second color layer on a support forming the first color pattern, and performing planarization of at least the second color layer. In a fifth aspect, in the method of the item (1), the third color pattern is formed by the following method (1), or a method comprising one of the following methods (2) and (3) to 200844497: 1) a method comprising forming a first color pattern Forming a third color layer on the support of the second color pattern, and exposing the third color layer, and then developing the method; (2) forming a third on the support forming the first color pattern and the second color pattern a color layer, a photoresist pattern formed on the third color layer using the photoresist, and a method of dry uranium engraving the third color layer using the photoresist pattern as an etch mask; and (3) a method of forming the first color pattern and Forming a third color layer on the support of the second color pattern, and performing a method of planarizing at least the third color layer. According to a sixth aspect of the present invention, in the method according to the fourth aspect of the present invention, planarization Including etchback treatment (the entire exposed surface of the uranium engraved color layer) and honing treatment (which hones all exposed surfaces of the colored layer) at least - 〇 according to the invention, the brother of the seven percent, the younger (1) The method further includes: forming a second stop layer on the first color pattern and the second color pattern after (b) forming the second color pattern and (c) removing the partial color pattern, wherein: removing the partial color map Included in the region where the third color pattern is to be formed or at least a portion of at least one of the first color pattern and the second color pattern is removed, and the second stop layer is removed in a region where the third color pattern is to be formed; and the third color is formed The pattern includes forming a third color layer on the support forming the first color pattern, the second color pattern, and the second stop layer, and dry--10-200844497 etching the third color layer until the second stop layer is exposed. According to an eighth aspect of the present invention, in the method of (1), the forming the first color pattern includes forming a first color layer on the support, and forming a first stop layer on the first color layer; and forming The second color pattern includes forming a second color layer on the support forming the first color pattern and dry etching the second color layer until the first stop layer is exposed. According to a ninth aspect of the invention, in the method of (1), the first color pattern and the second color pattern are formed in such a manner that surfaces of the first color pattern and the second color pattern are in contact with each other. According to a tenth aspect of the invention, in the method of (1), the first color pattern is formed, the second color pattern is formed, or at least one of the third color patterns is formed, including: · after the dry etching The body is subjected to an adhesion improving treatment; a color layer is formed on the support to which the adhesion improving treatment has been applied; the colored layer is exposed; and the exposed resultant is developed to form a color pattern. According to an eleventh aspect of the invention, in the method according to the tenth aspect of the invention, the adhesion improving treatment comprises at least one of adding an adhesion adjuvant or a fluorination treatment using a plasma. According to a twelfth aspect of the present invention, in the method according to the tenth aspect of the present invention, the color layer is coated with a total solid content including a relatively colored hardenable composition of from 0.05 to 1.25. A color-hardening composition of an organic decane compound in an amount of % is formed. -11- 200844497 According to a thirteenth aspect of the present invention, in the method of (1), the method of forming a first color pattern, forming a second color pattern, or forming at least one of the third color patterns comprises: After the etching, the adhesion improving treatment is not applied to the support. By coating the support with a colored hardening composition comprising an organic decane compound in an amount of from 0.3 to 1.2% by mass based on the total solid content of the composition. Forming a colored layer; exposing the colored layer; and developing the exposed resultant to form a colored pattern. According to a fourteenth aspect of the invention, in the method of the item (1), the region in which the third color pattern is to be formed includes a checkered pattern region. According to a fifteenth aspect of the present invention, in the method of (1), the area in which the third color pattern is to be formed includes a stripe pattern extending in a direction crossing the first color pattern and the second color pattern. . According to a sixteenth aspect of the present invention, a color filter is provided which is manufactured by the method of producing a color filter of the item (1). According to a seventeenth aspect of the present invention, a solid-state photographic element is provided which includes a color filter according to a sixteenth aspect of the present invention. SUMMARY OF THE INVENTION The present invention provides a method of fabricating a color filter that addresses the limitations of pattern formation and that forms a finer pattern. The present invention also provides a color filter having substantially rectangular color pixels. The present invention also provides a solid-state photographic element having excellent color reproduction power. -12- 200844497 [Embodiment] Method of Color Filter and Method of Making Color Filter According to an exemplary embodiment of the present invention, a method for manufacturing a color filter includes at least: u) repeating a pattern on a support Forming a first color pattern; (b) forming a second color pattern in a repeating pattern on a support without forming a first color pattern; (c) removing one of the first color pattern and the second color pattern by dry etching At least a portion of the portion that is the region in which the third color pattern is to be formed; and (d) forming a third color pattern on the support in a region where one of the first color pattern and the second color pattern has been removed. The color filter of the present invention is produced by this method. According to an exemplary embodiment of the method for fabricating a color filter of the present invention, the first color pattern and the second color pattern are each formed in a stripe pattern such that the cross-section of each of the first color pattern and the second color pattern can be substantially Upper rectangle. The cross section of the pattern indicates that the color pattern is cut in parallel with the pixels in the width direction of the pattern and the plane of the vertical support. One of the causes of the hypothesis of this effect is explained below. Typically for patterning of lithography, repeating patterns (e.g., bar patterns) have higher edge contrast than the spaced pattern, and the patterns can be formed such that the cross-section can be substantially rectangular. Further, when the pattern is formed into a strip pattern, the contrast of the longitudinal direction of the pattern is fixed so that the undesired phenomenon such as the formation of the pattern fillet does not occur. -13- 200844497 Because of these characteristics, the strip-shaped first color pattern formed by the lithography method and the strip-shaped second color pattern improve the contrast of the pattern edges in the direction of the longitudinal direction of the vertical pattern, and maintain the rectangular form of the cross-section of the pattern, The effect of optical proximity effects is thus excluded in the longitudinal direction of the pattern. Further, the stripe first color pattern and the second color pattern may also be formed by dry etching. In this case, the cross-section of the pattern is closer to a rectangle than that obtained by lithography. Further, a method of fabricating a color filter according to the present invention includes removing a portion of at least one of the first color pattern and the second color pattern from a region where the third color pattern is to be formed by a dry etching method to form a recessed portion, and The three color patterns are embedded in the recessed portion, and the influence of the optical intensity distribution or the pattern distortion can be suppressed. As described above, the pattern forming force can be improved by the method of producing a color filter of the present invention. In particular, it is possible to suppress the occurrence of a region where color pixels are not formed in the corner region of the color pixel, and it is also possible to suppress the occurrence of a region where the film thickness is thinned near the boundary of the color pixel. As a result, the limitation of pattern formation (especially by the color pattern formation by lithography) can be solved, and a color filter having finer pixels can be formed. Since the color filter of the present invention is manufactured by this method, the color filter has substantially rectangular color pixels. Further, in the method of manufacturing a color filter of the present invention, it is preferably an exemplary embodiment in which all color patterns (for example, all of the first to third color patterns) are formed by dry etching and/or honing, and This exemplary embodiment further addresses patterning forces and patterning limitations. -14- 200844497 by dry etching and/or honing to form all color patterns (for example, all of the first to third color patterns), or by layer etching formed by a layer formed of a material only forming a film thereof / or when honing is formed, it produces a thinner color filter. Therefore, the properties of the color filter can be improved, problems such as hue defects can be improved, or a small solid-state photographic element can be manufactured. As used herein, a layer formed of a material in which only a film is formed refers to a layer having a relatively large amount of coloring agent in order to exert its properties, such as a layer having a low color density per unit volume or requiring a plurality of coloring agents to achieve desired penetration. The layer of the spectrum. For ease of explanation, a color film (solid film) formed without being divided into a plurality of regions is referred to as a "color layer", and a color film (for example, a film patterned into a stripe pattern or the like) which is divided into a plurality of regions in a pattern form. It is called "color pattern". Here, an exemplary embodiment (patterning embodiment) obtained by forming a divided region into a pattern form includes an exemplary embodiment obtained by patterning and developing a photosensitive film by pattern exposure, and a borrowing An exemplary embodiment is obtained by forming a photoresist pattern on a color film, and using a photoresist pattern as an etch mask to image the color film by feed-forging, and a method of embedding the color film on the support. A specific embodiment is exemplified by patterning the depressed portion, and removing the portion of the depressed portion of the obtained colored film, and then forming a pattern or the like. Further, in the color pattern, a color pattern (e.g., a color pattern patterned into a square or the like) which is an element constituting the color filter array is referred to as a "color pixel". The procedure of the method of manufacturing a color filter of the present invention and the exemplified embodiment of -15-200844497 are described below, followed by the dry etching, the support, the color pattern, the photoresist, and the stop layer. Color Pattern Formation The formation of the first color pattern is performed by forming a first color pattern in a repeating pattern (e.g., a strip pattern) on the support. The method of forming the first color pattern preferably includes, but is not particularly limited to, (1) a method in which a color layer is formed on a support, and the formed color layer is exposed and developed (also referred to as "micro" in the present invention. Shadowing method), or (2) a method of forming a color layer on a substrate, forming a photoresist pattern on the formed color layer using a photoresist, and dry etching the color layer using the formed photoresist pattern as an etching mask The method (also referred to as "dry etching method j" in the present invention). The second color pattern is formed on the support by the region where the first color pattern is not formed (for example, sandwiched between the first color patterns) The region is formed by forming a second color pattern in a repeating pattern (such as a strip pattern). The third color pattern is formed by removing at least one of the first color pattern and the second color pattern by a color pattern removing program described later. The region is formed by forming a third color pattern. In the formation of the first color pattern and the third color pattern, an example of a method of forming the second color pattern and the table two color pattern preferably includes 〇) a lithography method (2) a dry etching method, and (3) a planarization method in which a second color pattern and a third color pattern are formed on a color pattern forming support, and a second color pattern and a third color pattern are formed The color pattern is subjected to a flattening process (also referred to as "flattening method" in the present invention). -16- 200844497 A specific embodiment of the planarization treatment is preferably that the colored resin composition is embedded in a concave (or encircled) between the colored patterns on the support to form a colored layer, and the entire exposure of the colored layer is hungry. An exemplary embodiment of the treatment of honing to remove excess portions of the formed colored layer from the recess. From the standpoint of simplifying the manufacturing method or manufacturing cost, planarization is an etch back method which includes dry etching to form the second and third entire exposed surfaces. The planarization process is not limited to the etch back method. The planarization process includes a honing process that includes honing the entire surface of the second and third color layers. A specified example of the honing treatment includes a chemical mechanical honing ("CMP") method in which the second and the first exposed surfaces are chemically and mechanically honed. Further, the planarization treatment preferably includes a combination of an etch back method and a honing method. In the formation of the second color pattern and the third color pattern, a combination of a dry engraving method and a planarization method. In contrast to the case where the colored pattern is formed by only the dry etching method, after the color pattern is formed by the dry etching method, the etch back method is applied to improve the flatness of the colored pattern. The first and second color patterns are preferably formed such that the surfaces of the patterns are in contact with each other from the viewpoint of suppressing generation of a region where color pixels are not formed and more effective effects of the invention. With regard to additionally addressing the limitations of pattern formation, the first color map includes a preferred example of a preferred color layer by applying a trapped portion of the depressed portion to a preferred color layer, hereinafter referred to as a three color layer (eg, CMP can be used, for example The width of the adjacent color pattern and the second -17-200844497 color pattern are independently obtained in one step, preferably from 0.5 μm to 2.0 μm, more preferably from 1.0 μm to 1.7 μm, and particularly preferably from 1.2 μm to 1.5. In the following description of the third embodiment of the present invention and the fourth exemplary embodiment, the widths of the first color pattern and the second color pattern are each independently preferably from 5 μm to 2.0 μm, and more preferably The thickness of the third color pattern is preferably from 0.5 μm to 2.0 μm, more preferably from ι·〇 micron to 1.7 μm, and is particularly good for the limitation of pattern formation from 7·7 μm to 1.4 μm. 1.2 micrometers to 1.5 micrometers. In the case of the third embodiment of the present invention described below and the fourth exemplary embodiment, the width of the third color pattern is preferably from 0.5 micrometers to 2.0 micrometers, and Preferably, the thickness of each of the first to third color patterns is preferably from 0.005 μm to 0.9 μm, more preferably from 〇5 μm to 0.8 μm, and further, to further solve the limitation of pattern formation. More preferably, it is ι·μm to 〇·7 μm. There is no particular limitation on the specific embodiment in which the first to third color patterns are formed by the “lithography method”, and the technique of lithography is known to be appropriate. For example, first, the colored photocurable composition described below is applied to the support directly or with other layers interposed therebetween, and dried (preferably further subjected to pre-baking treatment) to form a colored layer. The colored layer is formed by exposure of the pattern by radiation, and the color layer exposed by the pattern is developed (preferably further subjected to post-baking treatment) to obtain a color pattern. Post-exposure can be performed after development. The effect of the present invention is effectively obtained. Preferred examples of the radiation include -18-200844497 g-line, h-line, and i-line, and more preferably i-line. As for the developing solution usable for development, any developing solution can be used. The liquid is as long as it dissolves the unhardened portion. In particular, it can use various organic solvents or a combination of alkaline aqueous solutions. As for the designation of the photoresist to form the photoresist pattern in the "dry uranium engraving method", the specific embodiment is not particularly specific. The technique of lithography is known to be appropriately optimized and used. For example, first, a positive or negative photosensitive resin composition (photoresist) described later is applied onto a color layer, and dried (preferably further accepted). Pre-baking treatment) forming a photoresist layer. The formed photoresist layer is exposed to radiation and developed (preferably further subjected to post-baking treatment) to form a color pattern. For the purpose of the present invention, for exposing the photoresist layer The radiation is preferably a g-line, an h-line, and an i-line, and more preferably an i-line. As the developing solution usable for development, any developing solution can be used as long as it does not affect the color layer (including the colorant) and dissolves the unhardened portion (which corresponds to the hardened portion in the case where the photoresist is a positive type operation, and in the light The case where the resistance is a negative type operation is equivalent to the unhardened part). Specifically, it can use various organic solvents or a combination of aqueous alkali solutions. Among the above, the case where the first to third color patterns are formed by the dry etching method and the case where the second and third color patterns are formed by the etch back process are specified. The specific example of the dry etching is not particularly limited. However, it is known that dry-type etched examples are not suitable for the most suitable embodiment. A preferred embodiment of the dry uranium engraving is described below. -19- 200844497 Removal of color pattern The removal of the color pattern in the present invention is carried out by dry etching to remove a portion of the first color pattern and/or the second case in the region where the third case is to be formed. As for the area where the third color pattern is to be formed, there is no particular limitation on the area in which the third color pixel is to be formed, for example, the square pattern is as shown in the following FIGS. 6A to 6C, in which the green pixel is formed, and the third color is to be formed. The area of the pattern is preferably a bar graph, such as the area 120 in which the green pixels are formed in FIGS. 21A to 21C, and the first color pattern and the second color pattern extend in the direction in which they intersect. When the region of the third color pattern is a stripe pattern region, the first to the first patterns may be formed without forming pattern corners, and a substantially color filter array may be formed. A method for removing a region for forming a third color pattern by dry etching is preferably a method comprising using a photoresist (ie, forming a photoresist pattern for exposure of a third color region), in advance by a known lithography technique in the pattern and/or Or forming a photoresist pattern on the second color pattern and performing a dry etching process using the light as an etch mask. The length of one side of the region where the third color pattern is formed is preferably from 〇 to 2.0 μm, more preferably from 1 μm to 1.7 μm, and from a micron to 1.5 μm. In the case where the third embodiment of the present invention is described below as a specific embodiment, the length of the side portion forming the third color pattern is preferably 〇·5 μm to 2.0 μm, and more preferably 7.7 1.4 μm. Color map color map, and comparison area, 20 〇 区域 其 其 其 欲 欲 欲 欲 欲 欲 欲 欲 欲 欲 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 彩色 5 5 5 5 The specific embodiment of the dry etching of the color pattern is not particularly limited, and it is known that the specific embodiment of the dry touch can be suitably optimized and used. A preferred exemplary embodiment of dry etching is described below. Formation of Stop Layer The method of manufacturing the color filter of the present invention may include forming a stop layer (forming a first stop layer and/or a second stop layer). Formation of the first stop layer In the present invention, the second color pattern is formed by dry etching (including formation by "dry etching" and by "etch back etching"; the following is the same) and / or c Μ P processing is formed. The first color pattern is preferably formed by forming a first color layer on the support and forming a first stop layer on the formed first color layer (a forming process of the first stop layer). In this case, it is more preferable that the formation of the first color pattern includes forming a photoresist pattern on the first stop layer using the photoresist, and dry etching the first stop layer and the first using the formed photoresist pattern as an etch mask Color layer. Due to this first color pattern, the upper surface of the first color pattern formed (the surface of the two parallel supports of the color pattern away from the support side) is covered by the first stop layer. Therefore, the first color pattern can more effectively prevent the phenomenon such as film reduction and etching drying and/or c ΜΡ processing damage for forming the second color pattern. As a result, the spectral transmission characteristics of the color pixels of the color filter are easily controlled. Formation of the second stop layer In the present invention, the third color pattern is formed by dry etching (including formation by "Dry-21 - 200844497 uranium engraving method" and by "etching back treatment"; the following is also the case of 2 CMP treatment In the case, it is preferable to form the second stop layer on the first color pattern and the second color before forming the second color pattern and before removing the color pattern. Due to the above configuration, the second stop layer exists on the first and second patterns (in the opposite direction of the support when viewed from the color pattern; below). Therefore, the first and second color patterns can more effectively prevent damage by dry etching and/or CMP processing when the film is reduced to form the third color pattern. As a result, the spectrum of the color pixels of the color filter is easily controlled. The first stop layer and the second stop layer are each preferably a layer having a lower etching rate or a lower color pattern, and the stop layer is preferably used for visible light transmittance. The composition is formed such that the filter can be manufactured without completely removing the stop layer. Here, "transparent to visible light" means that the visible light transmittance is about or greater. Heating Procedure The method of the present invention preferably further comprises heating the colored layer at a temperature of from about 1 ° C to about 22 after removing the photoresist pattern including the color pattern and the color pixels. The color layer can be evaporated by heating (including The color pattern and the pixel absorb moisture, and can effectively suppress layer defects which may occur afterwards. Adhesion improving procedure The method for manufacturing a color filter of the present invention preferably includes improving the adhesion of the surface of the support of the dry etching; Adhesive improvement t / or after the color of the pattern is also the same as the color of the visible characteristic layer 95% (the package is colored to accept the support -22- 200844497 body to form a color layer; the color layer is exposed And developing the exposed color layer to form a color pattern. The method for manufacturing the color filter of the present invention can improve the adhesion between the color layer (color pattern) and the support, and can effectively suppress the development time. Color layer (color pattern) peeling, for example, even when the surface of the support is rendered hydrophilic by dry etching (for example, on the surface of the support) When the contact angle of water is less than 40°, it is not necessary to over-exposure (to increase the exposure amount) to improve the adhesion, and the accurate pattern size and adhesion treatment can be more effectively obtained together. Therefore, it is particularly effective in the coloring pattern hour. In the method for manufacturing a color filter of the present invention, the specific example of applying the adhesion improving treatment preferably includes the following two exemplary embodiments. The two specific embodiments can be used in combination. The method comprises: applying an adhesion improving treatment to the surface of the support after the dry etching process of removing the color pattern, forming a third color layer on the support body to which the adhesion improving treatment is applied, exposing the formed third color layer, and developing the exposed layer Forming a third color pattern. The peeling of the third color pattern can be effectively suppressed according to the exemplary embodiment. The second exemplary embodiment includes forming a first color pattern by dry etching, applying the surface of the support after the dry etching process Adhesive improvement treatment, forming a second color layer on the support to which the adhesion improving treatment has been applied, Forming a second color layer exposure, and developing the exposed layer to form a second color pattern. According to the exemplary embodiment, the second color pattern -23 - 200844497 peeling can be effectively suppressed. Regarding the adhesion improving effect, the adhesion improving treatment It is preferably a hydrophobic treatment 'and more preferably a contact angle between the surface of the support and water of 4 Å or more. Further, as for the adhesion improving treatment, it is preferably treated by adding an adhesion aid. At least one of fluorination treatment with plasma is used. Application of Adhesive Adhesives Adhesive adjuvants can be applied by conventional positive-type photoresist methods such as steam treatment, coating, inkjet coating, printing, or deposition. In the case of coating, various known coating methods such as slit coating, spin coating, cast coating, roll coating, spray coating, etc. can be applied. In the case of inkjet coating, it is possible to apply inkjet jetting using an ink jet head. Examples of the ink jet head include a charge control method for ejecting ink droplets by electrostatic induction force, an on-demand drop method (ie, pressure pulse method) for ejecting ink droplets by vibration pressure of a piezoelectric element, and converting an electric signal into a sound beam And an ultrasonic inkjet method in which a sound beam is applied to the radiation pressure of the ink to eject the ink droplets, and a thermal inkjet method in which bubbles are generated by heating the ink and the ink droplets are ejected by the generated pressure (ie, Bubble-Jet (registered trademark) ))By. Screen printing can be applied in the case of printing. Examples of deposition include atomization by spraying, deposition by evaporation, and soaking. Preferably, it is deposited by evaporation, and in this case, the treatment is preferably carried out at a low pressure of from about 30 to about 600 seconds. A solution comprising an adhesion aid is used in the case of coating or ink jet applications. The solution can be prepared by mixing a solvent such as cyclohexanone with a desired adhesion aid and dissolving the adhesive. After the adhesion adjuvant is applied, it is preferably dried using a hot plate, an oven or the like at a temperature of from 50 ° C to 300 ° C for about 30 to about 600 seconds. As for the adhesion adjuvant, the adhesion between the hardenable portion (i.e., image) and the color layer (especially the organic decane compound), as described below, and the development property of the uncured portion, may be performed using tantalum nitride or ruthenium oxide. Wait. In particular, from the viewpoint of forming a color pattern excellent in adhesion to the surface of the support without increasing the development residue of the unhardened portion (unexposed portion), it is preferably a compound represented by the following formula (A). However, the invention is not limited thereto.

R-Si-NH-Si-R6 type (8)

In the formula (A), R1 to R6 each independently represent a hydrocarbon group having 1 to 4 carbon atoms, and may include a ring structure and/or an unsaturated bond in its structure. Examples of the hydrocarbon group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, and a butyl group. In particular, each of R1 to R6 preferably represents a methyl group. Designated examples of the compound represented by the formula (A) are listed below. However, the invention is not limited thereto. -25 - 200844497 CH3 ch3 H3G—Si—NH—Si—CH3

CH 3 CH, C2H5 H5O2— Si — NH C2H5 C2H5 Si—C2H5 C2H5 C3H7 C3H7

The H7C3-Si-NH-Si-C3H7 II C3H7 C3H7 adhesion adjuvant is preferably present on the support such that the water provided on the adjuvant-treated support has a contact angle of 50° or more, and More preferably, it has a contact angle of 60 or more with respect to the surface of the support. When the amount of the adjuvant is within this range, it can effectively improve the effect of the color pattern constituting the color filter while reducing the development residue from the unexposed exposed region of the hardened layer, as described below. Fluorination treatment using plasma Fluorination treatment using plasma is preferably carried out by plasma generation of a fluorine-containing gas (e.g., a fluorocarbon such as CF4), followed by plasma ion irradiation. From the viewpoint of water repellency, it is more preferable to produce a plasma from a fluorocarbon gas containing no oxygen, and to treat the surface of the support with a plasma. In particular, the fluorination treatment using plasma can be carried out in the same manner as other dry etching treatments described in the present invention. Any known gas can be used as the fluorine-containing gas in the present invention, and is preferably a gas represented by the following formula (B).

CnHmFi Formula (B) In the formula (B), η represents 1 to 6, m represents 0 to 13, and 1 represents 1 to 14. -26 - 200844497 The fluorine-containing gas represented by the formula (B) is preferably selected from the group consisting of c F 4 , C 2 F 6 , C 3 F 8 , C 2 F 4 , C 4 F 8 , c 4 f 6 , C 5 F 8 , and CHF 3 , and a mixture thereof. The fluorine-containing gas is preferably selected from the group consisting of CF4, C2F6, C4F8, and CHF3, and further preferably CF4 and C2F6. Regarding its wide availability, it is especially good for cf4. Further, the fluorine-containing gas of the present invention may be selected from the group, and a gas mixture of two or more selected from the group may be used. The plasma treatment is preferably carried out for 5 seconds or less using a radio frequency (RF) having a power of 300 watts or more. As described above, each of the programs constituting the manufacturing method of the color filter of the present invention is described, and this program can be used in combination. For example, in forming the first to third color patterns, each of the lithography, the dry etching, and the flattening may be applied independently, and a combination of various methods may be used to manufacture the color filter. Further, it may include any program other than the above procedures as long as it does not affect the effects of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific examples of the method of manufacturing a color filter according to the present invention (i.e., the first exemplary embodiment to the fourth exemplary embodiment) will be described. However, the invention is not limited to these illustrative specific embodiments. First Exemplary Embodiment In the first exemplary embodiment, the third color patterns are arranged in a square pattern (i.e., B a y e r arrangement), and all of the first to third color patterns are formed by lithography. The first exemplary embodiment will be described below with reference to Figs. 1A to 8C. In the drawings 1A to 8C, the first plan views are shown in the first, second, third, fourth, fourth, fifth, sixth, and fourth, respectively, and the first, second, second, sixth, and fourth, respectively, and the first, second, second, third, third, and fourth, And Fig. 8B each shows a cutaway view taken along line A-A' of each of Figs. 1A, 2A, 3A, 4A, 5A, 6A, 7A, and 8A. Further, in FIGS. 5A to 8C, the 5C, 6C, 7C, and 8C maps are each taken along the line B-B' of each of the ία, 2A, 3A, 4A, 5A, 6A, 7A, and 8A maps. Cutaway view. Formation of First Color Pattern Here, a red pattern, a blue pattern, and a green pattern are formed as examples of the first color pattern, the second color pattern, and the third color pattern. First, as shown in Figs. 1A and 1B, a red pattern material is applied onto the support 10 at a predetermined film thickness to form a red layer 12, which is a first color layer. Then, pattern exposure, development, and post-baking treatment are performed to form a first color pattern in which the red pattern 14 becomes a stripe pattern as shown in Figs. 2A and 2B. Formation of second color pattern Next, as shown in FIGS. 3A and 3B, a blue filter material is coated on the surface of the support side on which the red pattern 14 is formed, so that a blue layer is formed with a predetermined film thickness. 16, which is the second color layer. Then, the area between the red patterns 14 is subjected to pattern exposure, development and post-baking to form a second color pattern in which the blue pattern 18 becomes a stripe pattern, as shown in FIGS. 4A and 4B. A stripe pattern formed by the adjacent red pattern 14 and the blue pattern 18. At this time, when the color filter array is designed as a square combination, the width ratio of the red pattern 14 to the blue pattern 18 (the width of the red pattern 14 and the width of the blue pattern 18) may preferably be 1 :1° However, the ratio of this -28- 200844497 can be changed depending on the design of the device. The color pattern is removed as shown in FIGS. 5A to 5C, and a photoresist is coated on the surface of the support side on which the red pattern 14 and the blue pattern 18 are formed, and is removed by exposure and development and then baked. A portion of the photoresist in a region of the color pattern and/or the second color pattern where the third color pattern is to be formed (e.g., region 20 for forming green pixels), thereby forming a photoresist pattern 22. Next, as shown in FIGS. 6A to 6C, the region 20 for forming green pixels on the red pattern 14 and the blue pattern 18 is removed by dry etching, and the red pixel 28 and the blue pixel 30 are formed, and then the red color is removed. The photoresist pattern 22 on the pixel 28 and the blue pixel 30. Formation of the third color pattern is as follows, as shown in FIGS. 7A to 7C, the green filter material is coated on the surface on which the red pixel 28 and the blue pixel 30 are formed, and the green layer 24 is formed. It is the third color layer. From the viewpoint of adhesion, the heat and adhesion improving treatment is preferably carried out before the application of the green filter material. Also for the same reason, it is preferred that the green filter material include an organic decane compound to be described later. The area for forming green pixels on the green layer 24 is exposed, developed, and post-baked to form a green pattern 26 (i.e., green pixel 32) which is a third color pattern. Thus, a color filter array including red pixels 28, blue pixels 30 and green pixels 3 2 is formed as shown in Figs. 8A to 8C. Second Example -29 - 200844497 The first to third color patterns are formed by the lithography method and the dry etching method (including the formation by the "dry etching method" and the "etchback method": the same applies hereinafter) . The second exemplary embodiment is described below with reference to FIGS. 9A to 20C in which the second color patterns are arranged in a checkered pattern (ie, a Bayer array; including a dry etching method (and CMP if necessary) to form all of the third color patterns. 9A to 10C, 9A, 10A, 11A, 12A, 14A, 15A, 16A, 17A, 18A, 19A, and 20A, and 9B, 10B, 11B, 12B, 13B , 14B, 15B, 17B, 18B, 19B, and 20B each show a cutaway view taken along line AA' of lines 9A, 10A, 12A, 13A, and 14A, and the 16C, 17C, 18C, 19C, and 20C each show the formation of the first color pattern along the line B-B' of the 15A, , I 7A, 1 8 A, 1 9A, and 20A lines as shown in Figs. 9A and 9B. As shown in the figure, for example, a red color layer 12 is formed on the red filter material coating body 1 as a first color layer, and a first stop layer 34 is further formed on the color layer 12, followed by a baking place. Since FIG. 9A is a view in which the first stop layer 34 is a transparent film, the dot pattern in FIG. 9A shows the color layer 12 under the first stop layer 34, and The white color of the first suspension layer 34 is not shown in the plan view as shown in Fig. 9B (the same applies to the following figures). Then, as shown in Figs. 10A and 10B, the photoresist is coated on the suspension to form a coating film, and The film is formed by pattern exposure, development and post-baking to form a case, column), one to 13 A, and the flat 1 6B 1 1 A 1 5C 1 6A is in red. The plane red block layer 34 forms a photoresist pattern 22 in a region where a red pattern is formed in -30-200844497. The first stop layer 34 and the red layer 12 are then dry etched using the photoresist pattern 22 as an etch mask, and the red pattern 14 is formed into a first color pattern, as shown in Figures A and 1 1 B. The photoresist pattern 2 2 is then removed. In the second embodiment, as shown in Figs. 1 1 A and 1 1 B, the red pattern 14 (i.e., the first color pattern) is formed into a stripe pattern and has a first stop layer 34 thereon. The second color pattern is formed next as shown in FIGS. 1 2 A and 1 2B, for example, a blue filter material is coated on the support side surface of the first stop layer 34 and the red pattern 14 with a predetermined film thickness. The upper layer forms a blue layer 16 which is a second color layer. Then, an etch back process and/or a CMP process is performed until the first stop layer 34 is exposed to form a blue pattern 18 which becomes a second color pattern of a stripe pattern as shown in Figs. 13A and 13B. By these processes, a stripe pattern in which the red pattern 14 and the blue pattern 18 are adjacent to each other is formed. After the blue layer 16 has been formed as shown in FIGS. 12A and 12B, the photoresist-forming photoresist pattern 22 covers the region where the blue pattern is to be formed instead of the etch-back process and/or the CMP process, as shown in FIG. 14B. Moreover, etching can be performed until the first stop layer 34 is exposed, and then the photoresist pattern 2 2 is removed. The height of the blue pattern after etching is different from the height of the red pattern. The etch back process and/or the CMP process can be performed again for the planarization of the layer surface, as shown in Figs. 13A and 13B.

Formation of the second stop layer and the color pattern I. Next, as shown in FIGS. 15A to 15C, the surface of the support side of the red pattern 14 - 31 - 200844497, the first stop layer 34 and the blue pattern 18 is formed thereon. A second stop layer 36 is formed thereon. A photoresist is applied to the second stop layer 36, and the layer in the region where the third color layer is to be formed (e.g., the region 20 for forming green pixels) is removed by pattern exposure and development. Then, a post-baking process is performed to form the photoresist pattern 22. Since FIG. 15A is a plan view showing a case where the first stop layer 34 and the second stop layer 36 are both transparent films, the dot pattern in FIG. 15A shows the red layer 14 of the lower layer, and the oblique line pattern display in FIG. 15A. The lower blue pattern 18, and the white blocks showing the first stop layer 34 and the second stop layer 36 as shown in FIGS. 15B and 15C are not shown in plan view (also in the following figures). Next, as in the 16A. As shown in FIG. 16C, using the photoresist pattern 22 as a photomask, the first stop layer 34, the second stop layer 36, the red pattern 14, and the blue pattern in the region 20 for forming green pixels are removed by dry etching. A portion of at least one of 1 8 thus forming a red pixel 28 and a blue pixel 30. Then, as shown in FIGS. 17A to 17C, the photoresist pattern 22 is removed. V In the second exemplary embodiment, as shown in FIGS. 15A to 17C, the first stop layer 34 and the second stop layer 36 are laminated on the red pixel 28, and the second stop layer 36 is layered. Closed on the blue pixel 30. The formation of the second color pattern is as follows, as shown in FIGS. 18A to 18C, the green filter material is coated thereon to form the red pixel 28, the blue pixel 30, the first stop layer 34' and the second stop layer 36. A green layer 24 is formed on the surface of the side, which is the third color layer. -32 - 200844497 Then an etch back process and/or a CMP process is performed until the second stop layer is exposed, thus forming a green pattern 26 (i.e., green pixel 32) which is a third color pattern. The state after etch back and/or CMP treatment is shown in Figures 20A through 20C. After the green layer 24 is formed, as shown in FIGS. 18A to 18C, it may form an exemplary embodiment in which the photoresist pattern 22 covers the region where the green pixel is formed instead of the etch back process, and then dry etching may be performed until the second stop layer is exposed. 36. The photoresist pattern 22 is then removed as shown in Figures 19A through 19C. The difference in height between the green pixel 32 and the red pixel 28 and the blue pixel 30 is improved after the etching. Therefore, the uranium treatment can be carried out again to complete the planarization, as shown in Figs. 20A to 20C. By the above processing, a color filter array having red pixels 28, blue pixels 30 and green pixels 32 is formed as shown in Figs. 20A to 20C. Third Exemplary Embodiment In a third exemplary embodiment, the third color pattern is arranged in a strip pattern extending in a direction crossing the first color pattern and the second color pattern, and is formed by lithography. First to third color patterns. The third exemplary embodiment will be described below with reference to Figs. 1A to 4B and Figs. 21A to 24C. In Figures 1A to 4B and Figures 21A to 24C, Figures 2, 2A, 3A, 4A, 21A, 22A, 23A, and 24A each show a plan view, and IB, 2B, 3B, 4B, 21B, 22 B , 23B, and 24B each show a line A-A' along the 1A, 2A, 3A, 4A, 21A, 22A, 23A, and 24A maps

And take a cutaway view. Further, in Figs. 21A to 24C, the 21C, 22C-33 - 200844497, 23C, and 24C drawings each show a cutaway view taken along line B - B ' of the 21A > 22A, 23A, and 24A drawings. Formation of First Color Pattern to Formation of Second Color Pattern First, the first color pattern and the second color pattern (Figs. 1A to 4B) were formed in the same manner as in Example 1. The color pattern is removed. Next, as shown in FIGS. 21A to 21C, a photoresist is coated on the surface of the support side on which the red pattern 14 and the blue pattern 18 are formed, and is removed by exposure and development and then baked. a color pattern and/or a portion of the second color pattern on which a third color pattern is to be formed (for example, a region 120 for forming a green pixel), thereby forming a photoresist pattern 122. In this case, The regions of the three color layers (for example, the region 120 for forming green pixels) and the photoresist pattern 122 are each formed to extend in a direction (for example, a vertical direction) crossing the strip-shaped red pattern 14 and the strip-shaped blue pattern 18. Strip pattern. Next, as shown in FIGS. 22A to 22C, the region 120 for forming green pixels on the red pattern 14 and the blue pattern 18 is removed by dry uranium engraving to form red pixels 1 28 and blue pixels 13 0, then the red photoresist 128 and the photoresist pattern 122 on the blue pixel 130 are removed. The formation of the third color pattern is next, as shown in the 2 3 A to 2 3 C, the green filter material is coated on the surface of the support side on which the red pixel 1 28 and the blue pixel 1 30 are formed. A green layer 124 is formed which is the third color layer. -34- 200844497 From the viewpoint of adhesion, the heat and adhesion improving treatment is preferably carried out before the application of the green filter material. Also for the same reason, it is preferable that the green filter material includes an organic decane compound to be described later. The region 120 for forming green pixels on the green layer 124 is exposed, developed, and post-baked to form a green pattern 1 26 (i.e., green pixel 1 3 2 ), which is a third color pattern. As shown in Figs. 24A to 24C, it forms a stripe pattern as a green pattern 1 2 6 of the third color pattern (i.e., green pixel 1 3 2 ). Thus, a color filter array including red pixel 1 28, blue pixel 1 30 and green pixel 132 is formed as shown in Figs. 24A to 24C. Fourth Exemplary Embodiment In a fourth exemplary embodiment, the third color pattern is arranged in a strip pattern extending in a direction crossing the first color pattern and the second color pattern, and by dry etching (if necessary Then, CMP) forms all of the first to third color patterns. The fourth exemplary embodiment will be described below with reference to Figs. 9A to 14B and Figs. 25A to 30C. 9A to 14B and 25A to 30C, the 9A, 10A, 11A, 12A, 13A, 14A, 25A, 26A, 27A, 28A, 29A, and 30A are each a plan view, and 9B, 10B, 11B, 12B, 13B, 14B, 25B, 26B, 27B, 28B, 29B, and 30B are shown along the lines 9A, 10A, 11A, 12A, 13A, 14A, 25A, 26A, 27A, 28A, 29A, and 30A. The line A_A' is taken as a cutaway view. In addition, in the 25A to 30C drawings, the 25C, 26C, 27C, 28C, 29C, and 30C drawings respectively show the lines along the 25A, 26A, 27A, 28A, 29A, and 30A lines B-B'-35- 200844497 And take a cutaway view. Formation of First Color Pattern to Formation of Second Color Pattern First, the first color pattern and the second color pattern (Figs. 9A to 14B) were formed in the same manner as in Example 2. The formation of the second stop layer and the removal of the color pattern are as follows, as shown in FIGS. 25A to 25C, the second stop is formed on the surface on which the red pattern 14 is formed, and the first stop layer 34 and the blue pattern 18 are on the support side. Layer 36. A photoresist is applied over the second stop layer 36, and the layer in the region where the third color layer is to be formed (e.g., the region 1 20 for forming green pixels) is removed by pattern exposure and development. Then, a post-baking process is performed to form the photoresist pattern 122. In this case, the region where the third color layer is to be formed (for example, the region 120 for forming green pixels) and the photoresist pattern 122 are each formed in a direction intersecting the strip-shaped red pattern 14 and the strip-shaped blue pattern 18. A strip pattern extending (for example, in the direction of the vertical). Next, as shown in FIGS. 26A to 26C, using the photoresist pattern 122 as a photomask, the first stop layer 34, the second stop layer 36, the red pattern I4 in the region 20 for forming green pixels are removed by dry etching. A portion of at least one of the blue patterns 1 8 forms a red pixel 1 28 and a blue pixel 130. Then, the photoresist pattern 122 is removed as shown in Figs. 27A to 27C. In the fourth embodiment, the second stop layer 34 is laminated on the red pixel 128, and the second stop layer 36 is formed as shown in the diagram of the second 25 A to 30 C. Laminated on the blue pixel 130. Formation of the second color pattern -36 - 200844497 Next, as shown in the 2nd 8th to 8th 8th C, the green color is filtered to form a red pixel 1 2 8 , a blue pixel 1 3 0, a first bow and a second The green layer is formed as a third color layer on the surface of the support side of the layer 36. An etch back process and/or a CMP process is then performed until the storm layer, thereby forming a green pattern 126 (i.e., green pixel 132) color pattern. The state after etch back and/or CMP treatment is shown in the figure. As shown in Figs. 30A to 30C, a strip pattern is formed as the third color pattern 1 26 (i.e., green pixel 1 3 2 ). After forming the green layer 124, the photoresist pattern 122 is formed as shown in FIGS. 28A to 28C to cover the region in which the green pixel is formed, instead of the exemplary embodiment, and then dry etching may be performed up to the stop layer 36, and then the photoresist pattern 122 is removed, such as 29A to. The height difference between the green pixel 1 3 2 and the red pixel 1 2 8 and blue is increased after etching. Therefore, the etch back process can be performed again to complete the form shown in Figs. 30A to 30C. By the above process, a color filter array having a red pixel 1 28 and a blue green pixel 133 is formed, such as the 3 0 A to 〇

Figure 31 shows a specific embodiment of the optical sheet array according to the third exemplary embodiment and the fourth exemplary embodiment as shown in Figs. 24A to 24C and 30A, wherein each color filter array is cut into pixel units of the member and has a reference symbol R (red), G (green material coated on the stop layer 34, ^ layer 124, the second stop of the exposure, which is shown in the green figure of the third 30A to 30C case, which can expose the second 29C for the etch back treatment The color pixels 1 3 0 shown in the figure are flattened, the pixels 1 3 0 and 3 〇C are shown in the figure to the color filter solid-state photography element of the 3 C C diagram) and B (blue-37-200844497). The dotted line in Fig. 3 relates to the interface between the pixel units of the G pattern (i.e., green pixel) state imaging element. Actually, the G color is formed into a stripe pattern, as in Figs. 24A to 24C and 30A to 0. In the third exemplary embodiment and the fourth exemplary embodiment, the first to third color patterns each form a stripe pattern. In other words, the first to third color patterns can be formed without forming pattern corners, optically adjacent effects. Therefore, the image of the solid-state imaging element is viewed in the orthogonal direction of the color external self-supporting body having a more rectangular cross-section. All of the first to third color pixels can be formed into a more rectangular shape. And the fourth example shows a specific embodiment shape pattern. The first embodiment of the method for fabricating a Bayer array color filter array in which a third color pattern is arranged, and wherein the third color pattern extends in a direction intersecting the second and third color patterns Third and fourth embodiments of the color array of strip patterns. However, the arrangement of the color color pixels of the present invention and the method of fabricating the same are not limited to the first exemplary embodiment of the present invention. Any arrangement may be applied to the present invention, for example, the third color may be arranged in a direction parallel to the first color pattern and the second color pattern or the table 2 color pattern may be arranged at an angle to the first color pattern and the pattern. And it indicates that the solid color pixel is in the example of the 3 C C picture, and all and all of the patterns can be suppressed. When this element is used. Therefore, the first to fourth patterns in the finely-formed square shape and the second color-patterned color filter filter may be the strip-shaped second color-38-200844497. In the method of manufacturing the color filter of the present invention The method for forming the first to third color patterns is not limited to the first to fourth exemplary embodiments of the present invention, and any combination of lithography, dry etching, and planarization may be used. For example, in the case of manufacturing a color filter including R (red), G (green), and B (blue), color pixels can be formed by any of lithography, dry etching, and planarization. Dry Etching In the method of manufacturing a color filter of the present invention, it performs dry etching to remove a color pattern. In addition, the color pattern is processed by "dry etching" or "etch back etching", which is performed by dry etching. The exemplary embodiment of the dry etching is not particularly limited and can be carried out in accordance with known embodiments. Typical examples of the dry etching method are known, as described in JP-A-59-126506, 59-46628, 58-9108, 58-2809, 57-148706, and 6 1-41102. BEST MODE FOR CARRYING OUT THE INVENTION From the viewpoint of forming a more rectangular pattern cut surface, and from the viewpoint of further reducing the damage of the support, it is preferred that the present invention perform dry etching in accordance with the following specific examples. That is, a preferred exemplary embodiment includes a first etching step in which a region (depth) etching is performed to a degree that the support is not exposed using a mixed gas of a fluorine-containing gas and oxygen (0 2), and a second etching step in which After the first etching step, a region (depth) etching of the support is performed using a mixed gas of nitrogen (N2) and oxygen (〇2) to the extent that the support is preferably exposed, and after the support is exposed in the storm-39-200844497 Excessive engraving. The etch designation technique, the first etching step, the second etching step, and over etching are described below in the preferred exemplary embodiment of dry etching. Calculation of the engraving conditions It is preferable to carry out the dry etching in the specific embodiment after the configuration of the etching conditions has been previously investigated by the following technique. 1. Calculate the etching rate (nano/min) of the first etching step and the engraving rate (nano/min) of the second etching step. 2. Calculate the time to etch to the desired thickness during the first etch step and the time to the desired thickness during the second uranium engraving step. 3. Perform the first etch step in accordance with the etch time calculated in item 2 above. 4. Perform a second etch step in accordance with the etch time calculated in item 2 above. Alternatively, the etching time is determined by detecting the end point, and the second etching step is performed in accordance with the uranium engraving time determined thereby. 5. Calculate the time of over-etching from the time of items 3 and 4 above, and then perform over-etching according to this time. First etching step Regarding the treatment of the organic material etched into a film in a rectangular form, the mixed gas used in the first etching step includes a mixed gas of a fluorine-containing gas and oxygen (?2). Thus, due to the exemplified embodiment of the first engraving step, where uranium engraving occurs to areas where the support is not exposed, damage to the support can be avoided. The second etching step and the over-etching are performed after the first etching step of etching the color layer uranium to a depth of the non--40-200844497 exposed support using a mixed gas of a fluorine-containing gas and oxygen, which can be used by avoiding the loss of the support The mixture of nitrogen and oxygen is subjected to a second etching step process and an etching process of over etching. The preferred ratio of the amount of etching determines the ratio of the etching amount of the first step uranium engraving to the ratio of the second step engraving without damaging the uranium engraving process by the first step engraving. The ratio of the etching amount of the etching in the second step to the total etching amount (the sum of the etching amount of the first step and the etching amount of the urethane of the second step etching) is preferably 〇% to 50% or less, and more preferably 1% by weight. Up to 20%. Here, the etching depth of the film to be etched is shown. Honing Process In the method of manufacturing a color filter of the present invention, the honing process of the preferred CMP process is used for planarization. It is preferred to use an aqueous solution (p Η : 9 to 1 for honing treatment) containing 0.5% by mass to 20% by mass of SiO 2 having a particle diameter of 1 〇 to 1 。. Use a soft ram pad such as expanded polyamine. The honing treatment uses a slurry and a honing pad at a slurry flow rate of 205 ml/min, wafer pressure · 0.2 to 5.0 psi' and hold: 1 · 0 Execute to 2 · 5 psi. Perform precise cleaning and dehydration after honing (1 to 5 minutes from 100 °C to 200 °C). The rectangular etching of the uranium engraving amount is more than a scale. For example, the abrasive grains (1) are used as the formate 100 to the ring pressure. The support of the present invention is not particularly limited as long as it is It can be used for color filters. Examples of the support include soda glass, borosilicate glass and vermiculite glass (all of which are used for liquid crystal displays), and any of them providing a transparent conductive film, and for solid-state photographic elements. A photoelectric conversion substrate such as a germanium substrate, an oxide film or a tantalum nitride. Further, a support can be inserted between the support and the color pattern The interlayer is as long as it does not impair the effects of the present invention. Color Pattern The first to third color patterns (first to third color layers) of the present invention are each preferably formed using a color hardening composition including a colorant. Examples of the colored curable composition include a colored photocurable composition and a non-photosensitive colored thermosetting composition. The first to third color patterns may constitute at least one of the color pixels of the color filter of the present invention. The third color pattern is formed by a lithography method, and a colored photocurable composition is used. When the first to third color patterns are formed by a dry uranium engraving method, the photohardenable component may be used. The non-photosensitive tinting thermosetting composition. Therefore, in the case of forming any color pattern by dry etching, it can increase the concentration of the colorant in the composition, and thus the spectral characteristics of the color filter can be obtained by a thin film. The photocurable composition colored photocurable composition includes at least one coloring agent and a photocurable component. The "photocurable component" is a type commonly used for lithography. a photocurable composition of the method, and a composition comprising at least one binder resin (alkali-soluble resin, etc.), a photosensitive polymerizable component (photopolymerizable monomer, etc.), and a photopolymerization-42-200844497 initiator can be used. As for the colored photocurable composition, the descriptions described in paragraphs [〇〇17] to [0064] of JP-A No. 2005-326453 can be directly applied. From the viewpoint of adhesion to the support, coloring The photocurable composition preferably includes an organic decane compound. In the case where the surface of the support is subjected to dry uranium engraving before the colored photocurable composition is coated on the support, it is more preferable that the colored photocurable composition includes organic Decane compound. Due to this configuration, it is possible to improve the adhesion between the color layer (color pattern) and the support, and to suppress the peeling of the color layer (color pattern) during development. In this way, even when the surface of the support becomes hydrophilic due to the dry etching method (for example, when the contact angle between the surface of the support and water becomes less than 40°), the overexposure for improving the adhesion (increasing the exposure amount) ) is unnecessary, and can be more effectively combined to obtain accurate pattern size and adhesion improvement. This configuration is therefore particularly effective when the color pattern size is small. The preferred amount of the total solid content of the organodecane compound relative to the colored photocurable composition depends on whether or not the adhesion improving treatment is applied to the support before the colored photocurable composition is coated on the support. In the case where a treatment for improving the adhesion is applied to the support and then the colored photocurable composition is applied to the support, the amount of the organic decane compound is preferably 〇. 〇5 with respect to the total solid content of the colored photocurable composition. To 1.2% by mass, more preferably 〇. 1 to 1 · 2% by mass, and particularly preferably 〇. 2 to 1.1% by mass 〇 on the other hand 'hardening the coloring light without treatment of improved support adhesion -43- 200844497 In the case where the chemical composition is coated on the support, the amount of the organic decane compound is preferably from 0.3 to 1.2% by mass, more preferably 〇. 4 to the total solid content of the colored photocurable composition. It is 1.2% by mass, and particularly preferably 0.5 to 1.1% by mass. When the amount of the specified organic decane compound is within the above range, the adhesion between the surface of the support and the color pattern can be further improved, but the storage stability of the colored photocurable composition is not deteriorated and the development residue by the development removal region is increased. . Further, in the method of producing a color filter of the present invention, in the case where the colored photohardenable composition includes an organic decane compound, the specific examples are exemplified as the following two specific examples. The first exemplary embodiment is a method comprising: after the dry etching method of the color pattern removing process, forming a third color layer on the support using a colored photo-curable composition comprising an organic decane compound, and exposing the formed third color layer An exemplary embodiment of developing the exposed third color layer to form a third color pattern. The adhesion improving treatment can be applied to the surface of the support just before the formation of the third color layer. In accordance with this exemplary embodiment, it is possible to more effectively suppress the peeling of the third color pattern. A second exemplary embodiment is a method comprising forming a first color layer by dry etching, and forming a second color layer on the support using a colored photocurable composition comprising an organodecane compound after the dry etching method. An exemplary embodiment in which two color layers are exposed and the exposed second color layer is developed to form a second color pattern. The adhesion improving treatment can be applied to the surface of the support just before the formation of the second color layer of -44 - 200844497. In accordance with this exemplary embodiment, it is possible to more effectively suppress the peeling of the second color pattern. Examples of the organodecane compound include compounds each containing s i in the molecule. In particular, it is preferably an organodecane compound represented by the following formula (I) (hereinafter also referred to as "designated organodecane compound"). The organic decane compound represented by the formula (I) The photocurable coloring composition of the invention preferably comprises at least one organodecane compound (designated organodecane compound) represented by the following formula (I). The adhesion between the photocurable coloring composition and the support is further improved by the incorporation of the specified organodecane compound. Further, when the photocurable coloring composition is in an unexposed state, it is preferred to carry out development and to suppress development residue. (OR1) L-Si (1)

In the formula (I), L represents an organic monovalent group, R1 and R2 each independently represent a hydrocarbon group, and η represents an integer of 1 to 3. Examples of the organic monovalent group represented by L include an alkyl group, an alkenyl group, an aryl group, an alkoxy group, an amine group, each of which may have one or more carbon atoms and may be substituted, and a combination thereof. Among them, an alkyl group having 1 to 20 carbon atoms and capable of taking -45 to 200844497 is preferred. The smog group represented by R 1 and R 2 includes a linear, branched or lyophilized courtyard group (for example, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, pentyl, hexyl, cyclohexyl). , phenyl). Wherein R1 and R2 each preferably represent a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and particularly preferably a methyl group or Ethyl. Further, η represents an integer of 1 to 3, and is preferably 2 to 3 with respect to stability and adhesion. The organodecane compound of the present invention is preferably a compound having at least one hydrophilic moiety in its molecule, and more preferably a compound having a plurality of hydrophilic moieties in its molecule. When a plurality of hydrophilic moieties are present in the molecule, they may be the same or different from each other. In the organic decane compound represented by the formula (I), the removal power in the case where the hardening force and the portion other than the hardened portion are removed by development after hardening or the like is preferably an organodecane compound represented by the following formula (II). That is, the compound is an organodecane compound having an organic monovalent group having a hydrophilic moiety.

Ll-Si (11}

In the formula (II), L represents an organic monovalent group having a hydrophilic moiety.

R1 and R2 each independently represent a hydrocarbon group, and have the same meanings as defined for R2 in R1 to 46-200844497 in the formula (I). The details and preferred examples of the hydrocarbon group represented by R1 and R2 are the same as those in the formula (I). Further, η represents an integer of 1 to 3, and is preferably 2 to 3 from the viewpoint of stability and adhesion. Hereinafter, the "organic monovalent group having a hydrophilic moiety" represented by L' is included in the "hydrophilic moiety" of the organic monovalent group L', which has a high affinity for a highly polar substance such as water, and includes, for example, an oxygen atom, A nitrogen atom, a sulfur atom, or a polar atomic group of a phosphorus atom. Examples of the hydrophilic portion include portions which may cause dipole-dipole interaction, dipole-ion interaction, ionic bonding, hydrogen bonding, and the like with a highly polar substance such as water. Examples of the hydrophilic portion include a polar group containing an oxygen atom, a nitrogen atom, a sulfur atom or the like, a dissociative group containing an oxygen atom, a nitrogen atom, a sulfur atom or the like; a hydrogen bond donor; a hydrogen bond acceptor; and a plurality of lone electrons Part of the (providing a hydrophilic field due to aggregation). Specific examples of the hydrophilic moiety include: a hydrophilic group such as a hydroxyl group, an amine group, a carbonyl group, a thiocarbonyl group, a decyl group, an amine carbenyl group, an amine formamyloxy group, or an amine formylamino group; a sulfonylamino moiety a urethane moiety; a thiocarbamate moiety; a guanamine moiety; an ester moiety; a thioether moiety, a urea moiety; a thiourea moiety; an oxyorthooxy moiety; a money moiety; a secondary amine moiety; a hydrazine moiety; a condensed ethoxy moiety represented by -(CH2CH2〇)a· (provided that a represents an integer of 2 or more); an oxycarbonyloxy moiety; and a partial structure represented by the following structural formula (Unit price to trivalent hydrophilic part). -47- 200844497 Monovalent hydrophilic part 0 ί-ΟΜ1 ΟΜ2 Ο

—COOM^ ~S—OM

II Ο Divalent hydrophilic part Ο 0 ΙνΓ Trivalent hydrophilic part

In this structural formula, Μ 1 and Μ 2 each independently represent a hydrogen atom or a monovalent metal atom (e.g., lithium, sodium, potassium, etc.). Among these hydrophilic moieties, from the viewpoint of stability of the photocurable coloring composition over time, it is preferably an ethylenically unsaturated bond which does not react with a compound having an ethylenically unsaturated bond (for example, the above photopolymerizable monomer). The structure that causes the Michael addition reaction. From this point of view, preferred examples of the hydrophilic moiety include a hydroxyl group, a carbonyl group, a thiocarbonyl group, an amine formamidine group, an amine formamyloxy group, an amine formamylamino group, a urethane moiety, and a thiocarbamate. Part, guanamine moiety, ester moiety, thioether moiety, urea moiety, thiourea moiety, oxycarbonyloxy moiety, moiety moiety, tertiary amine moiety, polycondensation represented by C Η 2 C Η 2 Ο ) a - The ethoxy moiety (where a is an integer of 2 or more), the oxycarbonyloxy moiety, and the partial structure represented by the above structural formula (monovalent to trivalent hydrophilicity - 48-200844497 part). When the partial structure -Si(ORl)nR23-n of the formula (II) is subjected to a hydrolysis reaction, it may become a cause of an increase in the viscosity of the hardenable composition with time. From the viewpoint of less occurrence of the hydrolysis reaction, the hydrophilic portion is preferably a trans group, a mineral group, a thiocarbonyl group, a urethane moiety, a thiocarbamate moiety, a guanamine moiety, an ester moiety, a thioether moiety, An amine methyl sulfhydryl group, an amine methyl methoxy group, an amine methionyl group, a urea moiety, a thiourea moiety, a tertiary amine moiety, or a ethoxylated moiety, more preferably a hydroxy, urethane moiety, a urethane moiety, a guanamine moiety, a sulfonamide moiety, an ester moiety, a urea moiety, a thiourea moiety, a tertiary amine moiety, or a polycondensed ethoxy moiety, and most preferably a hydroxyl group, an aminocarboxylic acid The ester moiety, the thiocarbamate moiety, the urea moiety, the tertiary amine moiety, or the polyethoxylated moiety represented by -(CH2CH20)a- (with the condition that a represents an integer of 2 or greater). Further, among the specified organodecane compounds, a compound represented by the following formula (ΠΙ) or (IV) is further preferable. Organic decane compound represented by formula (III) (OR·1)

In the formula (III), R11 and R12 each independently represent a hydrocarbon group having 1 to 6 carbon atoms. Hydrocarbons having from 1 to 6 carbon atoms represented by R11 and R12 -49-200844497 Examples of bases include linear, branched or cyclic alkyl groups having from 1 to 6 carbon atoms (e.g., methyl, ethyl, propyl) , isopropyl, butyl, isobutyl, pentyl, hexyl, cyclohexyl, and phenyl). Wherein R11 and R12 each preferably represent a methyl group or an ethyl group. R3 represents a divalent hydrocarbon group having 1 to 12 carbon atoms, and the hydrocarbon group may be unsubstituted or substituted. Further, the hydrocarbon structure in the hydrocarbon group may include a ring structure and/or an unsaturated bond. Furthermore, a monovalent hydrophilic moiety can be present in the hydrocarbon structure. The hydrophilic moiety referred to herein is a monovalent hydrophilic moiety as defined by L, and preferred examples thereof are the same as defined for L. Details of the divalent hydrocarbon group represented by R3 are hereinafter described. X represents a monovalent hydrophilic moiety. The hydrophilic moiety referred to herein is a monovalent hydrophilic moiety as defined by L', and preferred examples thereof are the same as defined for L'. η represents an integer of 1 to 3, and is preferably 2 to 3 with respect to stability and adhesion. The organodecane compound represented by the formula (IV) (〇R11)n X, f r>5 κ Ρ iq -z-rH-y-r1 - V3_n (IV) In the formula (IV), R11 and R12 are each independently Represents a hydrocarbon group having 1 to 6 carbon atoms. Examples of the hydrocarbon group having 1 to 6 carbon atoms represented by R11 and R12 include a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms (e.g., methyl, ethyl, propyl, isopropyl, butyl). Base, isobutyl, pent-50- 200844497, hexyl, cyclohexyl, and phenyl). Wherein R11 and Rl2 each preferably represent a methyl group or an ethyl group. R4, R5, R6, and R7 each independently represent a single bond or an unsubstituted or substituted hydrocarbon chain (divalent hydrocarbon group) having from i to 12 carbon atoms. When each of R4, R5, R6, and R7 represents a hydrocarbon chain (divalent hydrocarbon group), the hydrocarbon structure of the hydrocarbon chain may include a ring structure and/or an unsaturated bond. Further, the hydrocarbon chain (divalent hydrocarbon group) may have a monovalent hydrophilic moiety as a substituent. Details of each of the divalent hydrocarbon groups represented by R4 to R7 are described below. X' represents a hydrogen atom or a monovalent substituent, and the monovalent substituent may have a hydrophilic moiety. The hydrophilic moiety referred to herein is a monovalent hydrophilic moiety as defined by L, and its preferred embodiment is the same as defined for L. Y and Y' each independently represent a divalent hydrophilic moiety, Z represents a divalent or trivalent hydrophilic moiety, and q is 1 or 2. That is, in the case where q is 1, 'Z is not a monovalent hydrophilic portion, and in the case where q is 2, Z represents a trivalent hydrophilic portion. Examples of the divalent or trivalent hydrophilic moiety may include the same moiety as defined by the divalent or trivalent hydrophilic moiety in formula (I) or (II). Further, P represents an integer from 〇 to 20, and r represents an integer from 0 to 3. η represents an integer of 1 to 3. In the case where R3 or R4, R5, R6, and R7 in the formula (III) are each a divalent hydrocarbon group, the divalent hydrocarbon group may preferably be a linear, branched or cyclic alkyl group or an aromatic cyclic group. Further, the divalent hydrocarbon group may have a substituent. Examples of the substituent which may be introduced into the divalent hydrocarbon group include an aliphatic group, an aromatic group, a heterocyclic group, a halogen atom, a cyano group, a nitro group, an aliphatic oxy group, an aromatic oxy group, a heterocyclic oxy group, and a hydrophilic group. Sexual basis. Specifically, it is preferably an aliphatic group, an aromatic group, a heterocyclic group, a chlorine atom, a cyano group, and a hydrophilic group having 1 to -51 to 200844497 12 carbon atoms. Preferable examples of the aliphatic group having 1 to 12 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, a hexyl group, a cyclohexyl group, and an octyl group, and More preferably, it is a methyl group, an ethyl group and a propyl group. Examples of the aromatic group include a phenyl group, a naphthyl group and an anthracenyl group, and are preferably a phenyl group. Examples of the heterocyclic group include morpholinyl, tetrahydrofuranyl, pyrrolyl, furyl, thienyl, benzopyrrolyl, benzofuranyl, benzothienyl, pyrazolyl, isoxazolyl, isothiazolyl, Carbazolyl, benzisoxazolyl, benzisothiazolyl, imidazolyl, oxazolyl, thiazolyl, benzimidazolyl, benzoxazolyl, benzothiazolyl, pyridyl, quinolyl, Isoquinolyl, oxime, pyrimidinyl, pyridyl, porphyrin, hydrazine, quinazolinyl, quinoxalinyl, acridinyl, phenanthryl, decyl, carbazolyl, Carboxolyl, fluorenyl, triazolyl, oxadiazolyl, thiadiazolyl, of which morpholinyl, tetrahydrofuranyl, and pyridyl are preferred. Examples of the hydrophilic group include a hydroxyl group, an amine group, a carbonyl group, a thiocarbonyl group, a decyl group, an amine carbaryl group, an amine methyl methoxy group, and an amine mercaptoamino group, and among them, a hydroxyl group, a carbonyl group and an amine group are preferable. When R3, R5, R6, and R7 in the formula (III) are each a divalent hydrocarbon group, the divalent hydrocarbon group may include a "monovalent hydrophilic moiety" such as a hydroxyl group, an amine group, a thiol group, and an ammonium group. a base, an amine carbenyl group, an amine formamyloxy group, an amine formylamino group, or a partial structural moiety represented by one of the following formulas (each M1 and M2 are the same as defined above). -52- 200844497

—COOM1 Ο

In the above P~OM OM2, the "divalent hydrocarbon group" represented by R3 in the formula (III) is preferably a methylene chain having 1 to 5 carbon atoms, or may have a substituent and may include an oxygen atom in the chain. The methylene chain. The "divalent hydrocarbon group" represented by each of R4 to R7 in the formula (IV) is preferably a methylene chain having 1 to 5 carbon atoms, or a methylene chain which may have a substituent and may include an oxygen atom in the chain. (More preferably, a methylene chain having 3 carbon atoms). Preferable examples of the monovalent hydrophilic moiety of X of the formula (III) or X' of the formula (IV) include a trans group, an amine group, a thiol group, a ketone group, an amine carbaryl group, an amine methoxy group, an amine group A. a mercaptoamine group, and a partial moiety represented by one of the following structural formulas (each Μ 1 and M 2 are the same as defined above). Ο II Ρ-ΟΜ ΟΜ2

~COOM

0 II , —S-OM In the case where each of Υ1, Υ2 and Ζ in the formula (IV) is a divalent hydrophilic moiety, preferred examples thereof include a carbonyl group, a thiocarbonyl group, a urethane moiety, and a thiocarbamic acid. Ester moiety, guanamine moiety, ester moiety, thioether moiety, sulfonamide moiety -53 - 200844497, urea moiety, thiourea moiety, secondary amine moiety, _(CH2cH2〇)a- The base moiety (with the condition that a represents an integer of 2 or more), the oxycarbonyloxy moiety, and a partial structural moiety represented by one of the following structural formulas (Μ 1 is as defined above). 〇II —S-0—I!〇〇H—P-0-OM1 In the case where the oxime is a divalent hydrophilic moiety in the formula (IV), preferred examples thereof include a tertiary amine moiety, a urea moiety, and a thiourea moiety. And a partial structure represented by one of the following structural formulas.

In the compound represented by the formula (ΠΙ), it is more preferred that one of R11 and R12 each preferably represents a methyl group or an ethyl group, and R3 represents a group having 1 to 5 carbon atoms or may have a substituent and may be included in the chain. A methylene bond of an oxygen atom (preferably a methylene chain having 3 carbon atoms), χ represents an amine group, and n is a compound of 2 to 3 (preferably 2). Further, among the compounds represented by the formula (Iv), more preferably one of R11 and -54-200844497 R12 each preferably represents a methyl group or an ethyl group, and R4 and R5 each have a methylene chain of 1 to 5 carbon atoms. (preferably having a 2 methyl chain), and each of R6 and R7 preferably represents a methyl group having 1 to 5 methyl chains (preferably having 3 carbon atoms: and each of Y, Y' and Z represents The amine group, a compound wherein p is 0, q is 1, and r 2 to 3 (preferably 2). The specified organic examples represented by the formulae (I) to (IV) are shown below. However, the invention is not limited to these examples. Examples of the organodecane compound represented by the formula (I) are anoxycyclohexyl)ethyltrimethoxydecane, γ-epoxypropyldecane, γ-glycidylpropyltriethoxydecane, methane, methyl Triethoxy decane, vinyl triethoxymethoxy trimethoxy decane, vinyl trimethoxy decane, ethane hexane, γ-chloropropyl methyl dimethoxy decane, trimethyl 3,4-ring Oxycyclohexyl)ethyltrimethoxydecane, bis-decane, tetraethoxydecane, bis(trimethoxydecanephenyltrimethoxylate). The following is shown by formula (II), (III) or (IV) is a more preferred designated example (exemplified compounds (1) to (149)). Preferably, it represents a sub-carbon atom having a carbon atom>, and X' represents an amine group. 0' and η are decane compounds, including β-(3,4-cyclopropyltrimethoxytrimethoxydecane, γ-chloropropenyltriethoxychlorodecane, 2-(allyltrimethoxy) Hexane, and decane compound-55 - (2) 200844497 (1) H2N^-^Si(OEt)3 (3) HS/\/\Si(〇Et)3 HS^^^SiiOMeJa (4) H2N^^^ Si(OMe)3 (5) (6)

H2N^^k〇^\ (7) 〇 H2N>>r"^^Si(OEt)3

H (9) HS^ OEt OEt

(14)

Si(OMe)3

Si(OEt)3 (15) 〇) winter

Her

OH

(16) 〇 "Si(OMe)3 H2N Human S, Si(OMe)3 -56 - (17) 200844497 (18)

HO Ο Ο 丨人/^s 八/^Si(OMe)2

Η Ο

S^-^Si(OMe), (20)

S’Vx^^Si(〇Et)2 Λ (21) ~Si(OMe)3 (22)

XX, N production, ^Si(OEt)3 Η (23) Human N 〆 〆 ^Si(OE〇3 Η Η (24) 〇NT ν, Si(0Et)3 Η 1ST ν, Si(OEt)3 Η Η -57 - (25) )844497 (26) 0〆,又N^^^Si(〇Et)3 Η (27) (28) (29) 130)

MeO

Ο

N々, ^Si(〇Et)3 Η MeO

Si(〇Me)3 <3^25〇

Ο

N,, ^Si(〇Et)3 Η (^2Η25〇

Ο

/^^Si(〇Me)3

Si(〇Me)3 (31) (10)

Ο

Ο

N,^^Si(〇B)3 Η -58- (36) 200844497 (34)

Ο

Ο (35) H2Nv-^N^^Si(OEt)3 Η 八^^Si(OEt)3 η \^Ν Eight Si(OEt)3 Η (37) Η (39) (40) Λ IT Η , Si (〇Me)3

^Y^Si(OEt)3 (4)) ^^^S\(OEt)3 (44)

Has^^^^Si(OEt)3

OH • 59 - 200844497 (45)

Η 〇 Η (46) Η Η Η Ν, /Ν' (47) WV 〇 八 〇, Si (〇Et) 3 , Ν ^^'Si(OMe)3 Η (48)

Ο , Si(OEt)3 (49)

Η ΗΟ’γ^Ό OH

12^25 12^25 -60 - 200844497 (52) 〇人 Η

〇 II ^N^-^Si(OMe); 〇 Η 3

〇 (56) NaO, #八^〇v^〇, v〇, Sj(〇Et)3 Ο

(59) Y

HO

,Si(OEt)3 HO (60)

N^^Si(OEt)3 H (61) again

X

H

H (62) ^

... Si(OMe)3 -61 - 200844497

(64)

Ο Me (65) (66) 2 OEt (67)

(68) Η2Ν Ο人 Η r (69) H2N^hr^^Si(OMe)3 Η (70)

Η

Me Ο Me (71)

(72)

Η2Ν

Me 0 Me (75) Η2Ν

Si(OEt)3

OEt 200844497

(79) 〇 (78) 〇 ^C^〇^cAN/^xSi(〇Me)3 H 6Et Η H 0Me

(80) (81) Ο 广Ο, Κ ϊΓ^_3 Η Η 6Et (82) 广0 ^Ν^νΛν^-^γ〇Me Η Η OMe (83) ! Ο (84) , Ο (85) I Ο Η 5ί(ΟΜβ)3 Λ .OMe Η 0Me (86) (87) 〇'ο. 丨人N^^^rOEt 0Et Η Η (88)

X Η Η N^^Si(OMe)3

X Η Η -63 - (90) 200844497 (89) (91) Ο Ο Η OEt ο 丨〆0

Ο , Si(OMe)3 (92) Me Me〇j H O Me Η

!Γ^Γ (93) (94) 0 MeO.

H sSi(OMe)3 (95) (96)

Ci2K? 5'

Me o Ci2H25ap^^^^^j(〇M0)3 (97) ^12^25 (99)

(100) Si(OMe)3 (98) .OEt (102) (101)

NT H

Et H 0Et (103) Mountain / 0 Me H 0 Me (105)

H

丨 (OMe>3 H (104) H OEt 006) Gentry Me 6 Me -64 (108) 200844497 (107) α iTt3

Η , Si(OMe)3 (109) α (110) N^r° Me Η 0 Me

Me H 0Me (111) (112) 义 H OEt (113) (114) |pY^Si(OMe)3 (115) , ίΓτ士士 0 Me 0 Me (116) 〇人

H r (117) 〇 , ^人 Ν SK〇Me)3 (118)

Fork 4r°

Me (120)200844497 <119)

r^i(0Me)

-66 - 200844497

2 ]6 (146)

?H3 ch3 (CH30)2SjC3H60CC=CH 0 (147) ch3 (CH30)3SiC3H6OQC=CH2 2 (148) CH ～ yH3 CH3 (C2H50)2SiC3H60C,0=CH2 6 (149) CH3

(C2H50)3S i C3HeOC(b =C H

O-sensitized tinted thermosetting potassium exhibitant The non-photosensitive tinted thermosetting composition includes a colorant and a thermosetting compound' and the concentration of the colorant in the total solid content is preferably 5 Å. /q is larger and less than 100% by mass. Increasing the colorant concentration results in a thinner color filter. -67 - 200844497 Coloring agent The coloring agent which can be used in the present invention is not particularly limited, and one of conventional dyes or pigments may be used, or a mixture of two or more thereof may be used. Examples of the pigment which can be used in the present invention include various conventional inorganic or organic pigments. Regardless of whether it is an inorganic pigment or an organic pigment, considering a high transmittance, it is desirable to use a pigment having an average particle diameter as small as possible, and also considering the handling property, and the average particle diameter of the pigment is preferably 〇·〇 1 μm to 〇.  1 micron, and more preferably 0. 01 micron to 〇. 〇 5 microns. The pigments which can be preferably used in the present invention are shown below. However, the invention is not limited to these pigments. Examples of pigments include: c.  I. Pigment yellow 1 1 , 2 4 , 1 0 8 , 1 0 9 , 1 1 0 , 138, 139, 150, 151, 154, 167, 180, and 185; I. Yan Cai Orange 36 and 71; C. I. Pigment red 122, 150, 171, 175, 177, 209, 224, 242, 254, 255, and 264; C. I. Pigment Violet 19, 23 and 32; C. I. Pigment Blue 15:1, 15:3, 15:6, 16, 22, 60, and 66; and C.  I. Pigment black 1. In the case where the coloring agent of the present invention is a dye, the dye can be uniformly dissolved in the composition to obtain a non-photosensitive coloring thermosetting resin composition. The dye which can be used as the coloring agent of the composition of the present invention is not particularly limited, and a conventional dye for a color filter can be used. It can be used with 妣π-sitting azo, anilino azo, diphenylmethyl, fluorene, anthrapyridone, benzylidene, οχοηο, pyrazolyl triazole, pyridone azo, cyanine, phenol A dye of a chemical structure such as a thiol, pyrrolylpyrazole azo methine, sing, indigo, benzopyran, or anthracene. -68 - 200844497 Although the coloring agent content in the total solid content of the colored thermosetting composition of the present invention is not particularly limited, it is preferably from 30% by mass to 60% by mass. A suitable color ratio as a color filter can be obtained by setting the content of the colorant to 30% by mass or more. Further, when the content of the colorant is 60% by mass or less, photohardening can be performed completely and the decrease in strength of the film formed of the composition can be suppressed. Thermosetting Compound The thermosetting compound which can be used in the present invention is not particularly limited as long as the film formed of the composition can be hardened by heat. For example, it is possible to use a compound having a thermosetting functional group. The thermosetting compound is preferably a compound having at least one selected from the group consisting of an epoxy group, a methylol group, an alkoxymethyl group, and a decyloxymethyl group. Further preferred examples of the thermosetting compound include (a) an epoxy compound, (b) a melamine compound, a guanamine compound, an acetylene urea compound, or a urea compound, each of which is selected from at least one selected from the group consisting of a methylol group and an alkoxymethyl group. Substituting a substituent of a methoxymethyl group, and (c) a phenol compound, a naphthol compound or a ruthenium-based compound, each substituted with at least one selected from the group consisting of a methylol group, an alkoxymethyl group and a methoxymethyl group Substituted. In particular, polyfunctional epoxy compounds are particularly preferred as thermosetting compounds. The total content of the thermosetting compound in the colored thermosetting composition is preferably from 0.1 to 5% by mass, more preferably from 0 to 2% to 40% by mass, based on the total solid content (mass ratio) of the thermosetting composition, and is particularly preferable. It is 1 to 35 mass%, although it depends on the material. Various additives, if necessary, can be used for various additives such as adhesives, hardeners -69- 200844497, hardening catalysts, solvents, dips, polymers other than the above, surfactants, adhesion improvers, antioxidants, The ultraviolet absorbing agent, the deflocculating agent, the dispersing agent and the like are incorporated into the colored thermosetting composition of the present invention to the extent that the additive does not affect the effects of the present invention. Adhesives Adhesives are often added during the preparation of pigment dispersions, and the binders are solvent-free and should be soluble in organic solvents. The binder is preferably a linear polymer organic polymer which is soluble in an organic solvent. Examples of the linear high molecular organic polymer include polymers each having a carboxylic acid in a side chain thereof, such as a methacrylic acid copolymer, an acrylic copolymer, an itaconic acid copolymer, a crotonic acid copolymer, and a maleic acid copolymer. a partially esterified maleic acid copolymer or the like, for example, JP-A No. 5 9 - 4 4 6 1 5 Patent, Japanese Patent Application Publication (JP-A) No. 54-34327, JP-B Patent No. 5 8 - 1 2 5 77, JP-B 54-25 95 7 , JP-A 5 9- 5 3 8 3 6 , and JP-A 5 9-7 1 048. Similarly, it is possible to use an acidic cellulose compound each having a carboxylic acid in its side chain. Among these various binders, polyhydroxystyrene, polyoxyalkylene resin, acrylic resin, acrylamide resin, and acrylic/acrylamide copolymer resin are preferred from the viewpoint of heat resistance, and the developing property is controlled by the developing property. The viewpoint is preferably an acrylic resin, an acrylamide resin, and an acrylic/acrylamide copolymer resin. Preferable examples of the acrylic resin include a copolymer formed of a monomer selected from the group consisting of benzyl (meth)acrylate, (meth)acrylic acid, hydroxyethyl (meth)acrylate, (meth)acrylamide, and the like. Including, for example, benzyl methacrylate / -70- 200844497 methacrylic acid, and benzyl methacrylate / benzyl methacrylamide, KS photoresist - 106 (trade name, Osaka Organic Chemical Industry Ltd.  Manufacturing), Cyclomer P System [J Product (Daicel Chemical Industries, Ltd.) Copolymer. Dispersing the colorant in the binder at a higher concentration improves, for example, the adhesion to the underlying layer and the properties of the coated surface during spin coating or stitch coating. Curing Agent In the present invention, it is preferred to add a curing agent when an epoxy resin is used as the thermosetting resin. There are many kinds of curing agents for epoxy resins, such as the stability, viscosity, curing temperature, curing time, and heat generation properties of the mixture of the resin and the curing agent, so the application, use conditions and working conditions of the curing agent are required. Choose a suitable curing agent. This curing agent is described in detail in "Epoxy Resins (Shokodo)" by Hiroshi Kakiuchi, Chapter 5. Examples of the curing agent include the following: a catalytic curing agent such as a tertiary amine and a boron trifluoride-amine complex; a curing agent which quantitatively chemically reacts with a functional group in the epoxy resin, such as a polyamine and an acid anhydride; curing at room temperature Agents such as diethylenetriamine and polyamide resin; medium temperature curing curing agents such as diethylaminopropylamine and ginseng (dimethylaminomethyl)phenol; and high temperature curing curing agents such as phthalic anhydride and stretching Phenylenediamine and the like. In terms of chemical structure, the curing agent includes an amine including an aliphatic polyamine such as diethylenetriamine, an aromatic polyamine such as an exophenylene diamine, and a tertiary amine such as dimethylamine. a methyl group) phenol; an acid anhydride comprising phthalic anhydride, a polyamide resin, a polysulfide resin, a boron trifluoride-monoethylamine complex, an initial stage condensate such as a phenol resin, dicyandiamide, etc. . These curing agents are reacted by heating, epoxy resin, and polymerized and cured. In order to lower the film thickness, the amount of the binder or the curing agent is preferably as small as possible, and particularly the amount of the curing agent is preferably 35 mass% or less, more preferably 30 mass% or less, and more preferably 30 mass% or less. Still better at 25% by mass or less. Hardening Catalyst In the present invention, in order to obtain a high-concentration coloring agent, it is effective to be subjected to reaction hardening with a curing agent and hardening reaction by an epoxy resin. Therefore, a hardening catalyst can be used instead of the hardener. The amount of the hardening catalyst added is preferably from about 1/10 to 1/1, 〇〇〇 times, more preferably from about 1/20 to 1 /5 00, with respect to the epoxy resin having an epoxy equivalent of about 150 to 200. Multiple, and still more preferably about 1/30 to 1/250 times by weight. Solvent The colored thermosetting composition of the present invention can be used in the form of a solution in which a colored thermosetting composition is dissolved in any solvent. Basically, the solvent for coloring the thermosetting composition in the present invention is not particularly limited as long as the solubility and coating properties of the components of the colored thermosetting composition are satisfied. Dispersant A dispersant may be added to improve the dispersion efficiency of the pigment. It may use any suitably selected known dispersant as a dispersing agent, and examples thereof include a cationic surfactant, a fluorochemical surfactant, a polymer dispersant and the like. A variety of compounds are available as dispersing agents. Examples of the dispersing agent include: indigo compound (trade name:. EFKA-745, manufactured by EFKA); SOLSPERSE 5〇〇〇 (trade name, Lubrizol Japan Ltd. Manufactured); Cationic interface-72- 200844497 Active agent' such as organosiloxane polymer KP341 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), (meth)acrylic acid (co)polymer POLYFLOW No. 75, No. 90 and No. 95 (both are trademark names, Kyoeisha Chemical Co. ,Ltd·manufacturing), or W001 (trade name 'Yusho Co.,Ltd. Manufactured; nonionic surfactants, such as polyoxyethylene ethyl lauryl ether, polyoxyethylene ethyl stearyl ether, polyoxyethylene ethyl oleyl ether, polyoxyethyl octyl phenyl ether, Polyoxyethylene ethyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, or sorbitan fatty acid ester; anionic surfactant, such as W 0 0 4, W 0 0 5 and W 0 1 7 (both are trademark names, Yusho Co., Ltd.) Manufacturing); polymeric dispersants such as EFKA-46, EFKA-47, EFKA-47EA, EFKA POLYMER 100, EFKA POLYMER 400, EFKA POLYMER 401, and EFKA POLYMER 450 (both trade names, Morishita & Co·, Ltd.) Manufacturing), or DISPERSE AID 6, DISPERSE AID 8, DISPERSE AID 15 and DISPERSE AID 9100 (both are trade names, San Nopco Ltd. Manufacturing); various SOLSPERSE dispersions!| , such as SOLSPERSE 3000, 5000, 9000, 12000, 13240, 13940, 17000, 24000, 26000, or 28000 (all are trademark names, Lubrizol Japan Ltd. Manufacturing); ADEKAPLURONIC L31, F38, L42, L44, L61, L64, F68, L72, P95, F77, P84, F87, P94, L101, P103, F108, L121, P-123 (all are trade names, Asahi Denka Κ ·Κ·manufacturing); and ISONET S-20 (trade name, Sanyo Chemical Industries Ltd. Manufacturing). It may be used alone as one of the dispersing agents, or a mixture of two or more of -73 to 200844497 may be used. The dispersant of the present invention is usually preferably about 0 parts by mass per part by mass of the pigment. The colored thermosetting composition is added in an amount of from 1 to 50 parts by mass. Other Additives In fact, various additives may be further added to the non-photosensitive colored curable composition of the present invention. Specific examples of the various additives include the above organic decane compounds relating to the colored photocurable composition. The preferred range of the organic decane compound is the same as that of the colored photocurable composition. Photoresist As described above, when the first to third color patterns are formed by the "dry etching method", they are formed using a photoresist to form a photoresist pattern. Also when removing the color pattern, it is preferable to form a photoresist pattern using a photoresist. It can use positive light suitable for radiation sensitive to ultraviolet light (g-line, h-line, i-line), far ultraviolet (including excimer laser), electron beam, ion beam, or X-ray. The resistive positive resist composition is a positive photosensitive resin composition. The photosensitive resin layer is exposed for the purpose of the present invention, and the radiation is preferably a g-line, an h-line, and an i-line, and particularly preferably an i-line. Particularly, the positive photosensitive resin composition is preferably a composition comprising a bismuth subnitride compound and an alkali-soluble resin. It is preferable to use a positive photosensitive resin composition comprising a bismuth azide compound and an alkali-soluble resin as a positive photoresist because it is irradiated with light having a wavelength of 500 nm or less. The azide group is decomposed into a carboxyl group, and changes from an alkali-insoluble state to an alkali-soluble state. Positive-type photoresists are significantly superior in resolution and are therefore used to fabricate integrated circuits such as 1C and LSI. An example of a bismuth subnitride compound is a naphthoquinonediazide compound. -74- 200844497 Insect Killing Layer The first and second stopping layers are preferably formed using the above-described hardenable composition. The composition comprising a thermosetting polymer can be preferably used for the curable composition. More preferred examples of the polymer include a polyoxyalkylene polymer and a polystyrene polymer. More preferably, it is a material known as a spin-on-glass (SOG) material, or a thermosetting composition including a polystyrene compound or a polyhydroxystyrene compound as a main component. As for the index indicating the etching resistance of the hardenable composition forming the stopper layer, for example, the Ohnishi parameter can be used (references: JP-A Nos. 2004-294638 and 2005-146182). In the present invention, the parameter of the colored curable composition is 3.  5 to 4. 5. The parameter of the hardenable composition forming the stop layer is 2 · 5 or less, which selectively determines the color-hardening composition that can be established. The Ohni shi parameter is calculated according to the following equation (I). (C + 0 + H)/(C-0)··. In the equation (I), C, Ο and Η each represent the number of moles of carbon atoms, oxygen atoms and hydrogen atoms in the repeating unit of the polymer. The calculation example of the Ohni shi parameter is shown below. In this calculation, the calculation is performed after the number is carried to the decimal place. Calculation Example 1: 荞Acrylate compound (C + 0 + H) / (C-0) = (3 3 + 6 + 25) / (3 3 - 6) = 2. 3 7 Calculation Example 2: Polyhydroxystyrene compound (C + 0 + H) / (C-0) = (8 +1 + 8) / (8-1) = 2. 42 -75 - 200844497 The color filter manufactured by the above method of manufacturing a color filter can be used for a liquid crystal display or a solid-state imaging element such as a charge coupled device (C CD), and is particularly suitable for a high resolution solid state exceeding megapixels. Photography component. The color filter of the present invention can be used as a color filter arranged between, for example, each pixel group constituting the CCD and the microlens for collecting light. In particular, this color filter is more suitable for use in which the pixel size is 2. Solid-state photographic components of 5 microns or smaller, and are particularly suitable for use where the pixel size is 2. Solid-state photographic elements of 0 microns or less. Solid-State Photographic Element The solid-state photographic element of the present invention comprises the color filter of the present invention. Since the solid-state imaging element of the present invention includes the color filter of the present invention (which has substantially rectangular color pixels), the solid-state imaging element is excellent in color reproduction power. Although the configuration of the solid-state imaging element is not particularly limited as long as it includes the color filter of the present invention and as a solid-state imaging element, an example of the configuration thereof will be described below. For example, the solid-state imaging element of the present invention includes a support, a plurality of photodiodes (for example, a CCD image sensor, a CMOS image sensor, etc.) forming a light receiving region of the solid state imaging device, and a transfer electrode composed of a plurality of turns, etc., wherein a light-shielding film made of tungsten or the like (the light-shielding film has a perforation in the light-receiving region of the photodiode) is provided on the photodiode and the transfer electrode, and a device protective film composed of tantalum nitride or the like is provided on the light-shielding film to cover the light-shielding film and the light. The entire surface of the light receiving region of the diode, and the color filter of the present invention are provided on the device protective film. Further, for example, the solid-state imaging element of the present invention may further comprise a light collecting unit (for example, a microlens or the like, the same applies hereinafter), which is provided on the protective layer of the device and under the color filter (closer to the color filter of the support) The light sheet side may further include a light collecting unit on the color filter. EXAMPLES The invention is described in detail below with reference to examples. However, the invention is not limited thereto, as long as the subject matter does not depart from the spirit of the invention. Unless otherwise indicated, "parts" means parts by mass (or by mass). Further, in the following procedures, the treatment using a commercially available treatment solution is carried out in accordance with a method designated by the manufacturer unless otherwise specifically stated. Example 1 A color filter was fabricated in accordance with an exemplary embodiment (first exemplary embodiment) in which a third color pattern was arranged in a checkered pattern (i.e., a Bayer arrangement), and all color layers were formed by lithography. . The details of the manufacturing method are described below. The first color pattern is formed by a spin coater to red (R) photohardenable composition "SR-5000L" (trade name, F uj ifi 1 m E 1 ectr ο nics M at eri al s C 〇·, L Td · manufacturing) coated on the substrate to form thick enamel.  The coating film of 8 μm was then subjected to a prebaking treatment for 2 minutes at a temperature at which the coating film temperature or the ambient temperature was 100 ° C using a hot plate to obtain an R color layer which was the first color layer. Then use the i-line stepper (Canon Inc. Manufacture) Exposing the R color layer to a pattern of exposure of 200 mJ/cm 2 to the developer "CD-2060" (trade name, Fujifilm Electronic Materials Co.) , Ltd -77 - 200844497 Manufactured) subjected to development for 1 minute 'cleaned with pure water' and dried by spin drying. Then, post-baking was further carried out at 220 °C for 5 minutes to form an R pattern, which is the first color pattern, in the pattern region where the R pattern is intended to be formed. Here, the R pattern forms a stripe pattern. The line of the R pattern and the gap are the line: 1 .  5 microns and clearance: 1 .  5 microns, and the film thickness after post-baking is 0. 7 microns. In this example, "line" indicates the line width of the pattern and "gap" indicates the width of the area sandwiched between the two patterns (the pattern is not formed) (the same applies hereinafter). Formation of second color pattern Next, a blue (B) photocurable composition "SB-5 000L" (trade name, manufactured by Fujifilm Electronics Materials Co., Ltd.) is coated on the side of the substrate on which the R pattern is formed. On the surface, a thickness of 0 is formed. A 7 micron coating film and a hot plate were used to carry out a prebaking treatment for 2 minutes at a temperature at which the coating film temperature or the ambient temperature was 100 ° C to obtain a B color layer, which was a second color layer. Then use the i-line stepper (Canon Inc. Manufacture) Exposing the B color layer in a pattern at an exposure of 250 kHz/cm 2 to the developer "CD-2060" (trade name, Fujifilm Electronic Materials Co.) , manufactured by Ltd.) subjected to development for 1 minute, washed with pure water, and dried by spin drying. Then, post-baking was further carried out at 220 °C for 5 minutes to form a B pattern, which is a second color pattern, in the pattern region where the B pattern was intended to be formed. Here, the B pattern forms a stripe pattern of parallel R patterns in a region where the R pattern is not formed. The line of the B pattern and the size of the gap are lines: 1 .  5 microns and gap: 1 · 5 microns, and the film thickness after post-baking is 〇.  7 microns. -78 - 200844497 Further, the R pattern and the B pattern are formed in such a manner that the surfaces of the adjacent patterns are in contact with each other. The surface of each of the R pattern and the B pattern is a flat surface. The upper surface of the g卩R pattern and the B pattern are the same as the height of the substrate. Then the positive photoresist "FHi622BC" (trade name, Fujifilm Electronic Materials Co. ,Ltd. It is coated on the surface of the substrate side on which the R pattern and the B pattern are formed, and then baked to form a thick ruthenium.  8 micron photoresist layer. Then, an i-line stepper (manufactured by Canon Inc.) was used to pattern the photoresist layer (where G pattern (G pixel) is to be formed) on the pattern area of the R and B patterns at an exposure amount of 250 mJ/cm 2 . The exposure was carried out, and heating was carried out for 1 minute at a temperature at which the temperature of the photoresist layer or the ambient temperature was 90 °C. Then use the developer "FHD-5" (trade name, Fujifilm Electronic Materials Co.) ,Ltd. The development was carried out for 1 minute, and the post-baking treatment was performed at 110 ° C for 1 minute to remove the photoresist of the region where the G pattern (G pixel) was to be formed, thereby forming a photoresist pattern. In the formed photoresist pattern, the area where the G pattern (G pixel) is to be formed is 1. 5 micron xl. A 5 micron square perforation pattern, and the array is a checkered pattern. Removal of color pattern Then dry etching was performed under the following conditions to remove regions of the R and B patterns which were to form a G pattern (G pixel). First use dry etching equipment (trade name: U-621, Hitachi Hi-Technologies Corp. Manufacturing), in RF power: 800 watts, antenna bias: 400 watts, wafer bias: 200 watts, indoor pressure: 4. 0 Pa, substrate temperature: 50 ° C, and the species and flow rate of the mixed gas: CF4: 80 ml / min -79 - 200844497 clock, 02: 40 ml / min, and Ar: 80 〇 ml / min The first step is a dry etching process for 90 seconds. The B pattern scraping amount under the condition of dry etching in the first step is 5 25 nm, and the R pattern is 635 nm, and the etching amount of the B pattern and the R pattern in the first engraving step is 75% each. With 91%. As a result, the thickness of the residual film on the support was 175 nm and 65 nm, respectively. Then in the same etch chamber, at RF power: 600 watts, antenna bias: 100 watts, wafer bias: 250 watts, indoor pressure: 2. OPa, substrate temperature: 50 ° C, species and flow rate of mixed gas · · N2: 500 ml / min, 〇 2: 50 ml / min, and Ar: 500 ml / min (N2/02 / Ar = 10 / l/10), and over-etching rate: the second step of dry etching and over-etching is performed under conditions of 20% total etching. The etching rate of each of the B pattern and the R pattern in the second step dry etching is 600 nm/min or more, and the residual film for etching the B and R patterns takes about 1 Torr to 20 seconds. The etching time is calculated as the sum of 90 seconds of the first etching time and 20 seconds of the first uranium engraving time. As a result, the etching time is 90 + 20 = 1 10 seconds and the excessive etching time is 110x0. 2 = 22 seconds, total etch time is set to 1 1 0 + 22 = 1 32 seconds. As described above, the R and P pixels are obtained by dry etching to remove portions of the B and R patterns which are to form regions of the G pattern (G pixels). Secondly, use the photoresist release agent "MS-23 0 C" (trade name, Fuji film Electronic Materials Co. ,Ltd. The release process is performed for 120 seconds to remove the photoresist. Heating was then carried out at 100 °C for 2 minutes. Formation of the third color pattern -80- 200844497 Next, a photo-curable composition of the G pattern will be formed, 'S G - 5 0 0 L 》 ” Fujifilm Electronics Materials Co. , manufactured by Ltd.) On the surface of the substrate side on which the R and B pixels are formed, a thick micron coating film is formed, and a preheating treatment is performed using a hot plate at a temperature at which the coating film temperature or the ambient temperature is t. The G color layer is obtained in minutes, which is a color layer. Then use the i-line stepper (Canon Inc. Manufactured) G-color was exposed in a pattern at an exposure of 200 mJ/cm 2 and subjected to development for 1 minute with "CD-2060" (trade name, manufactured by Fujifilm Electronic Materials Co...), washed with pure water, and spinped After dry drying, post-baking was further carried out at 220 ° C for 5 minutes to form a G pattern (G pixel) in a pattern region where G (G pixel) is intended to be formed, which is a color pattern. The G pattern (G pixel) is formed into a checkered pattern in such a manner that each G pixel is embedded in the region to be etched, and each G pixel is 1. 5 microns micron squared. The array of G pixels is a checkered pattern. In addition, the surface of the substrate is formed into a planar form. That is, the upper surface of the R pixel and the B image G pixel is the same as the height of the substrate. In this way, an array of color patches having R pixels, G pixels, and B pixels is obtained. In the color filter array thus obtained, it suppresses the occurrence of a region where no pixel is formed in a corner aggregation region of each color element (R pixel, G pixel, and B pixel), and also suppresses a film of a pixel near the boundary of each pixel. The occurrence of thick and thin areas. (business coating 0. 6 100 Third Color Layer Agent, Ltd. The pattern third forms xl . 5 Prime and Color Filter Color Image Color Color -81 - 200844497 This result shows that the above method of manufacturing a color filter can solve the limitation of pattern formation and form a finer pattern. Example 2 A color filter was produced in accordance with an exemplary embodiment (second exemplary embodiment) in which a third color pattern was arranged in a checkered pattern (i.e., a Bayer arrangement), and all of the color layers were formed by dry etching. The details of the manufacturing method are described below. Formation of the first color pattern The red (R) photocurable composition "SR-5 000L" by the spinner (trade name, Fujifilm Electronics Materials Co.) , manufactured by Ltd.) coated on a ruthenium substrate to form a thickness of 0. An 8 micron coating film was then obtained by heating at 220 ° C for 5 minutes using a hot plate to harden the coating film to form an R color layer which was the first color layer. The thickness of the R color layer after formation using SR-5000L is 0. 65 microns. The thermoset composition "ITS-54S-3 00 A" (trade name, Lasa Industries, Ltd.) was then applied by spinner. Manufactured on the surface of the ruthenium substrate side on which the R color layer is formed so that the film thickness is 30 nm, and then heating is performed to harden at 2200 ° C for 5 minutes to form a transparent film 1 on the R color layer It is the first stop layer. Then the positive photoresist "FHi622BC" (trade name, Fujifilm Electronic Materials Co. ,Ltd. Manufactured) coated on the transparent film 1, and pre-baked to form a thickness of 0. 8 micron photoresist layer. Then use the i-line stepper (Canon Inc. Manufacture) The photoresist layer to form the pattern region of the B pattern is exposed in a pattern of 250 mJ/cm 2 -82 - 200844497, and is heated at a temperature such that the temperature of the photoresist layer or the ambient temperature is 90 ° C. minute. Then use the developer "FHD-5" (trade name, Fujifilm Electronic Materials Co. ,Ltd. The development was carried out for 1 minute, and further post-baking was performed at Π ° C for 1 minute, and a photoresist pattern as an etching mask was formed by removing the photoresist of the desired color pattern region to form the B pattern. In this resist pattern, a stripe pattern is formed, and with respect to the etching transition difference (the pattern width difference of the etching is reduced), the line of the photoresist pattern and the gap are the line: 1. 6 microns and clearance: 1. 4 microns. Next, as described above, dry etching of the transparent film 1 and the R color layer is performed using the formed photoresist pattern as an etching mask, whereby the R pattern ' is created as the first color pattern. First, a dry etching apparatus (trade name: U-621 ’ Hitachi Hi-Technologies Corp.) was used, at RF power: 800 watts, antenna bias: 400 watts, wafer bias: 200 watts, and indoor pressure: 4. 0 Pa, substrate temperature: 50 ° C, and species and flow rate of the mixed gas: CF 4 : 80 ml/min, 〇 2: 40 ml/min, and the first etching treatment was performed for 90 seconds under Ar: 800 ml/min. The R color layer scraping amount under the above etching conditions was 6 3 5 nm' and the first etching was 9 1 % uranium engraving. It takes about 3 seconds to etch the transparent film 1 and the residual film has a thickness of about 68 nm. Then in the same uranium chamber, at RF power: 600 watts, antenna bias: 100 watts, wafer bias · 250 watts, indoor pressure: 2. OPa' substrate temperature: 50. (:, species and flow rate of mixed gas: N 2 : 520 ml / min, -83 - 200844497 〇 2: 50 ml / min, and Ar: 500 ml / min (N2/02 / Ar = 10 / l / 10) 'and over-etching rate: etching treatment is performed under the condition that the total etching is 20%. The etching rate of the R color layer under the second etching condition is 600 nm/min or more, and the R color is etched. The residual film of the layer takes about 10 seconds. The etching time is calculated as the sum of the first etching time of 90 seconds and the first uranium etching time of 1 〇. The result is that the etching time is 90 + 1 0 = 1 0 0 Seconds and excessive uranium engraving time is 1 00x0. 2 = 20 seconds, the total etch time is set to 1 00 + 20 = 1 20 seconds. After dry etching under the above conditions, a photoresist release agent "MS230C" (trade name, Fujifilm Electronic Materials Co., Ltd.) was used.  The release treatment was carried out for 1 20 seconds to remove the photoresist, and an R pattern having the transparent film 1 on the upper layer was obtained as the first color pattern. Here, the R pattern forms a stripe pattern. The size of the line and the gap is the line: 1 · 5 microns and the gap: 1 .  5 microns. Formation of second color pattern Next, a blue light-curable composition "SB-5 000L" (trade name, Fujifilm Electronics Materials Co., Ltd.) was used using a spin coater. Manufactured on the surface of the substrate side on which the transparent film i and the R pattern are formed, a coating film having a thickness of 7 μm is formed, and heated at a temperature of 220 ° C for 5 minutes using a hot plate to form a film to be hardened. B color layer, which is the second color layer. Then use a dry etch device (trade name: U-6 2 1, manufactured by Hitachi Hi-Technologies Corp.) at RF power: 600 watts, antenna bias: 100 watts, wafer bias · 250 watts, indoor Pressure: 2. 0 Pa, substrate temperature: 5 (TC, and mixed gas species and flow rate: N2: 520 ml / min -84 - 200844497 clock and eight 1 *: 500 ml / min (1 ^ 2 / eight ^ 1 / 1 Under the conditions, etching is performed on all surfaces (etchback treatment). Since the etching rate of the B color layer under the second etching condition is 150 nm/min or more, and the transparent film on the R pattern The B color layer formed on 1 has a film thickness of 500 nm, which is calculated to take 200 seconds to remove the B color layer and expose the transparent film 1 on the R pattern. The etching time is set to be overetched by this time plus 1 〇 second. As a result, since the etching time was 200 seconds and the excessive etching time was 10 seconds, the total etching time was set to 200 + 1 0 = 2 10 0 seconds. Under the above conditions, the etching of all the surfaces was performed to obtain a B pattern, which was a second color pattern. The resulting B pattern is formed in such a manner that it is embedded in the recessed portion between the R patterns on the ruthenium substrate. Thus, the R and B patterns are formed in such a manner that the surfaces of the adjacent patterns are in contact with each other. Further, the transparent film 1 on the R pattern The upper surface and the upper surface of the B pattern are the same height as the substrate. Stop layers is formed using a spin coater followed by thermosetting composition "ITS-54 S- 3 0 0 A" (trade names, Lasa Industries, Ltd. Manufactured on the surface of the substrate on which the R pattern, the transparent film 1 and the B pattern are formed, and formed into a film having a film thickness of 30 nm, and heated at 220 ° C for 5 minutes using a hot plate to make a coating The film is hardened to form a second transparent film 2 on the transparent film 1 and the B pattern, which is a second stop layer. Then the positive photoresist "FHi622BC" (trade name, Fujifilm Electronic Materials Co. ,Ltd. Manufactured) coated on the formed transparent thin -85 - 200844497 film 2, and then baked to form a thickness of 0. The 8 micron photoresist layer forms the same condition light that forms the photoresist pattern in the first color pattern, and then develops, so that the G pattern (the photoresist of the G image is formed to form a photoresist pattern. The pattern is formed in the formed photoresist pattern). The area of (G pixel) is 1. 5 micron xl. The 5 micron pattern, and its array is a checkered pattern. The removal of the color pattern was followed by the same conditions as in Example 1, except that the first step was changed to 95 seconds, the second step was changed to 20 seconds, and the interval was changed to 23 seconds, and the total etching time was changed to 1 3 8 seconds, by the transparent film 1, the transparent film 2, the R pattern, and the pattern of the B pattern (G pixel). In this way, dry etching is performed from the R pattern and the B pattern to the area of the pattern (G pixel), thereby obtaining R pixels and G. Secondly, a photoresist release agent "MS-23 0C" (trade name Electronic Materials Co.) is used. ,Ltd. The release treatment process removes the photoresist pattern. Formation of the third color pattern Next, a photocurable composition of the G pattern will be formed" S G, Fujifilm Electronics Materials Co., Ltd.  On the surface on which the R pixel, the B pixel, the transparent film 1, and the substrate side are formed, a thick ridge is formed.  The 6 micron coated film was heated at a temperature of 2200 ° C for 5 minutes, thereby obtaining a G color third color layer. At this time, the thickness of the G color layer on the transparent film 2 is thick. Then, in the area where the pattern is exposed as follows, the pattern of the G-side perforation is formed. One-step etching Excessive etching is performed by dry etching to form G to form G pixels. , Fujifilm 120 seconds to go _ 5 0 0 0 L,, (manufactured) coated transparent film 2, and the use of a hot color layer, the degree is 500 Na -86 - 200844497 meters. Then use dry etching equipment (trade name: U-621, Hitachi Hi-Technologies Corp. Manufacturing), in RF power: 600 watts, antenna bias: 1 watt, wafer bias: 250 watts, indoor pressure: 2. OPa, substrate temperature: 50 ° C, and mixed gas species and flow rate: N2: 5 00 ml / min and 8 ^ 500 ml / min (> 12 / 81-1 / 1), the entire surface is implemented Etching (returning uranium treatment) until the transparent film 1 and the transparent film 2 are exposed. At this time, the etching rate of the G color layer was 150 nm/min or more, and it was calculated that exposing the transparent films 1 and 2 took 200 seconds. The etching time is set to over-etch for this time plus 1 second. As a result, since the etching time is 200 seconds and the excessive uranium engraving time is 1 sec., the total etching time is set to 200 + 1 0 = 21 〇 second. In this way, the desired color pattern region where the G pattern (G pixel) is to be formed is formed. G pattern (G pixel), which is a third color pattern. The G pattern (G pixel) is formed into a checkered pattern in such a manner that each G pixel is embedded in a region formed by etching, and each G pixel is ???·5 μm×1·5 μm square. The array of G pixels is a checkered pattern. In addition, the surface of the substrate is formed into a planar form. That is, the transparent film 2 on the R pixel and the transparent film 2 of the B pixel have the same height as the surface of the G pixel with respect to the substrate. In this way, a color filter array having R pixels, G pixels, and B pixels is obtained. In the color filter array thus obtained, it suppresses the occurrence of a region where the color pixels are not formed in the corner-concentrated regions of the respective color images -87-200844497 (R pixels, G pixels, and B pixels), and is also suppressed in each pixel. The occurrence of a region where the film thickness of the color pixel near the boundary is thinned. This result shows that the above-described method of manufacturing a color filter can solve the limitation of pattern formation, and a finer pattern can be formed. In the color filter formed by the lithography method. The G, R and B patterns basically form a separation pattern (separation island) (G is a checkered pattern), and the pattern forming force of the conventional pattern is inferior to the line and gap pattern due to the adjacent effect at the time of exposure. It is known that the pattern rectangle of a color composition specially coated on a color filter is inferior to a general photoresist. In order to compensate for the rectangular nature, the first and second color layers are formed into strip lines and gap patterns, and the high-resolution photoresist and the dry etching assist are used to form a color filter. The color filter is superior to the conventional filter. As a result, the limitations of the improved pattern, particularly the formation of color patterns by lithography, and the formation of color filters with finer pixels are feasible. In the case of the first example, the luminescent composition P1 which forms the G pattern was prepared in the following manner. : Preparation of liquid by ball mill will be used as pigment, the ratio is 8 0/2 0/3 5 (mass ratio) (C · I · Pigment Green 3 6 / c · ; { • Pigment Green 7 / c丄 Pigment Yellow 1 3 9) c · 丨. Pigment Green 3 6 , C · I · Pigment Green 7 and C · I · Pigment Yellow 1 3 9 Mixture (15 parts) -88- 200844497 , as a dispersant BYK 2001 ( Disperbyk: BYK-Chemie, solid content Concentration 4 5 · 0 % ) (1 〇) (calculated solids are about 4 · 5 parts), benzyl propyl methacrylate / methyl propyl acid (mole ratio: 70 / 30) copolymer (5 . 5 parts), and cyclohexane as a solvent (69. 5 parts) were mixed and dispersed for 15 hours to prepare a pigment dispersion (P1). Use MICROTRAC NANOTRAC UPA-EX1 50 (trade name, Nikki so Co. ,Ltd. Manufacture) The average particle size of the pigment in the pigment dispersion (P1) was measured by dynamic light scattering and found to be 200 nm. Preparation of the coloring light-curing member composition The above-mentioned pigment dispersion liquid P1 was used, and the components in the following composition were mixed and stirred to obtain a solution of the coloring photocurable composition P1. The amount of the organic decane compound in the total solid content of the colored photocurable composition P 1 is 0. 6 mass ° / 〇. Composition pigment dispersion P1 ". 65 parts of the exemplified compound (1〇3) [designated organodecane compound]. . . 0. 15 parts of octanedione-0-benzylidene hydrazine [photopolymerization initiator]. . . 1. 5 parts diisopentaerythritol hexaacrylate [photopolymerizable monomer] ··.  6 parts alkali-soluble resin (adhesive polymer) [benzyl methacrylate / methacrylic acid (mole ratio: 7 0 / 30) copolymer, Mw: 3 0,000]. . . 2 parts PGMEA (solvent). . . 2 5. 3 5 parts of color filter fabrication A substrate having R pixels and B pixels was obtained in a manner similar to that of Example 1, except that the procedure before forming the third color pattern was the same as in Example 1. -89 - 200844497 That is, the substrate has a region in which the G pattern (G pixel) is formed by dry etching from the strip pattern R and B patterns, and photoresist removal and heating have been accepted. Adhesive improvement treatment LPAH (which is constructed by spin coating equipment SK-60BW) using a low pressure bonding equipment (trade name, Dainippon Screening Mfg.)  Co·, Ltd. manufactured), HMDS (trade name, Fujifilm Electronic Materials Co.) under the following conditions ,Ltd. Manufactured; hexamethyldioxane) is vapor-deposited on the surface on the side of the substrate on which the R and B pixels are formed after heating. Then, using a spin coating apparatus SK-60BW, a color-hardening composition P1 which forms a G pattern is applied by spin coating on the HMDS-deposited side of the Si substrate under the following conditions, and baked at 100 ° C for 120 seconds. A color layer of G, which is a third color layer. Vapor deposition conditions Substrate temperature: 1 1 0 °C Vapor deposition time: 45 seconds Spin coating conditions Droplet amount: 2 g Coating speed: 1, 〇〇〇 rpm Coating thickness (dry thickness) · · · · · μm coating Coating temperature: 2 3 ° C pattern exposure, development, etc. The formed G color layer is subjected to pattern exposure, development, rinsing treatment, and drying treatment under the condition of forming the third color layer as in Example 1 - 90- 200844497 And post-baking treatment, except that the pattern exposure is performed using an optimum exposure amount determined by the following method, and a G pattern of the third color layer is formed in a desired color pattern region where a G pattern (G pixel) is to be formed (G pixel) ). The G pattern (G pixel) is formed by inserting each G pixel into a region formed by the above etching (this region is a region where a G pattern (G pixel) is to be formed, and is removed by dry etching from the R pattern and the B pattern). Pattern, each G pixel is 1. 5 micron xl. 5 micrometers squared. The array of G pixels is a square pattern. In addition, the surface of the substrate is formed into a planar form. That is, the upper surface of the R pixel, the Β pixel, and the G pixel is the same as the height of the 矽 substrate. In this way, a color filter array having R pixels, G pixels, and Β pixels is obtained. In the color filter array thus obtained, it suppresses the occurrence of a region where the color pixel is not formed in the corner aggregation region of each color pixel (R pixel, G pixel, and Β pixel), and also suppresses color pixels near the boundary of each pixel. The occurrence of a thin film thickness region. This result shows that the method of manufacturing a color filter can solve the limitation of pattern formation and form a finer pattern. Evaluation of storage stability of colored photohardenable composition Using a Ε-type viscometer (Toki Sangyo Co., Ltd. The viscosity of the solution was stored at room temperature for 1 month, and the storage stability of the solution of the colored photocurable composition P 1 prepared above was evaluated in accordance with the following criteria. The results of the evaluation are shown in Tables 1 to 3 below. -91- 200844497 Standard A: No increase in viscosity was observed. B: A viscosity increase of 5% or more and less than 10% (within an acceptable range for practical use) was observed. C: A viscosity increase of 10% or more and less than 20% (within an acceptable range for practical use) was observed. D: The viscosity is increased by 20% or more, which is more than the acceptable range for practical use. Measurement of contact angle after adhesion improving treatment A tantalum substrate was provided as a substrate for measuring a contact angle, and an adhesion improving treatment was accepted. The contact angle between the substrate and the water is DROP MASTER 500 (trade name, Kyowa Interface Science Co. ,Ltd. Manufacturing) measurement. The measurement results are shown in Tables 1 to 3 below. Measurement of Optimum Exposure Ennt In the pattern exposure of the G color layer, the exposure is performed by changing the exposure amount in units of 1 〇mJ/cm 2 and measuring the exposure amount by a critical dimension scanning electron microscope (SEM). Pattern width. Set the width of the pattern to a predetermined value of 1. The exposure amount of 5 microns is called the optimum exposure amount Ε. ^. The measurement results are shown in Tables 1 to 3. Measurement of Adhesive Exposure In the pattern exposure of the G color layer, the exposure was carried out by changing the exposure amount in units of 1 〇mJ/cm 2 , and the pattern peeling of each exposure amount was observed with an optical microscope. The minimum amount of exposure that the pattern does not peel off is called the amount of adhesion exposure. The measurement results are shown in Tables 1 to 3. Evaluation of Adhesion -92- 200844497 Adhesion was evaluated by estimating the lower edge of the exposure, which was obtained by subtracting the exposure amount from the optimum exposure amount E〇pt. It shows that the wider the lower edge of the exposure, the better the adhesion. The evaluation results are shown in Tables 1 to 3. A: The lower edge of the exposure is wide enough and the adhesion is excellent. B: The lower edge of the exposure is wide and the adhesion is good. C: The lower edge of the exposure is narrow, but within the acceptable range for practical use. D: The adhesion exposure amount exceeds the optimum exposure amount E. ^, but with the aid of reticle offset, etc., within the acceptable range of practical use. E: Adhesiveness is extremely poor, and the amount of adhesion that can be adhered by the reticle offset or the like is still beyond the acceptable range for practical use. Examples 4 to 10 A color filter was produced in the same manner as in Example 3 except that the kinds and amounts of the specified organodecane compounds of Example 3 were changed to those shown in Tables 1 to 3, and the same as in Example 3. Way assessment. The results of the evaluation are shown in Tables 1 to 3. Example 1 1 A color filter was produced in the same manner as in Example 7 except that the plasma fluorination treatment was carried out instead of Η MDS vapor deposition under the following conditions to improve the adhesion of Example 7, and evaluated in the same manner as in Example 7. . The results of the g-flat evaluation are shown in Tables 1 to 3. Plasma fluorination treatment _ using dry uranium engraving equipment (trade name: U_621, Hitachi

Hi-Technologies Corp.), in RF power · 800 watts 'antenna bias: 400 watts, wafer bias: 200 watts, indoor pressure: 2.0 Pa, substrate -93 - 200844497 Temperature: 50 ° C, And the species and flow rate of the mixed gas: Ar: 8 00 ml / min and CF4: 200 ml / min, plasma treatment was carried out for 5 seconds. Example 1 2 A color filter was produced in the same manner as in Example 3 except that plasma fluorination treatment was carried out instead of HMDS vapor deposition under the same conditions as in Example 11 to improve the adhesion of Example 3, and as in Example 3. Evaluate in the same way. The evaluation results are shown in Tables 1 to 3. Example 13 A color filter was produced in the same manner as in Example 1 except that a plasma fluorination treatment was carried out instead of HMD S vapor deposition under the same conditions as in Example 11 to improve the adhesion of Example 1 and Example 10 was evaluated in the same manner. The evaluation results are shown in Tables 1 to 3. Example 1 4 A color filter was produced in the same manner as in Example 11 except that the exemplified compound (103) was not added to the colored photocurable composition, and was evaluated in the same manner as in Example 11. The evaluation results are shown in Tables 1 to 3. Example 1 5 A color filter was produced in the same manner as in Example 3 except that the amount of the exemplified compound (103) was changed to the amounts shown in Tables 1 to 3, and the adhesion improving treatment was not carried out, and as in the example 3 in the same way as the assessment. The results of the evaluation are shown in Tables 1 to 3. Example 1 6 and 1 7 A color filter was produced in the same manner as in Example 15 except that the amounts of the exemplified compound (10 3 ) were each changed to the amounts shown in Tables 1 to 3, and as in the example -94- Evaluation of the same method of 200844497 1 5. The evaluation results are shown in Tables 1 to 3 °. Example 1 8 A color filter was produced in the same manner as in Example 15 except that the exemplified compound (1〇3) was not added to the colored photocurable composition, and as in Example 15 Evaluate in the same way. The evaluation results are shown in Tables 1 to 3. 200844497 I. Evaluation of Adhesiveness <<<<< Adhesion Exposure (mJ/cm2) Round 150, 150 150 150 150 si sf 1 i 槪HMDS: 40° HMDS: 40° HMDS: 40° HMDS: 40° HMDS: 40° Storage stability of organic decane compound composition <<< CQ amount (% relative to solid content) ο 〇dd (N ,··Η Type exemplified compound (103 Illustrative compound (102) exemplified compound (ιοί) exemplified compound (36) exemplified compound (103) Example 3 Example 4 Example 5 Example 6 Example 7 丨96- 200844497 _痣C < u < c Line heart 1 m ^ 〇〇Μ ) (N inch ^ 1 钖w ^ S 〇〇Ο <3 ο ir> rH tn ▼丨11Η zero丨丨丨< in 瘃旦_ 1 m SS ^ Μ 1 i 秘ο Ο inch 〇〇寸 inch inch ο Ο inch ο Ο Ο rH o 〇rH 00 QS 〇〇Q 00 Q s 00 Q s ΐττί 1 persuade m mi 1 force m ffi ffi ffi ffi reduction composition storage stability PQ <<< PQ < /^N 容Η 松_ 4π , , <ΙΏ(N Q^ in (N \Q m ▼—H rH do 〇rH msmms ms ο s /^S sss Type 1 I 1 1 1 1 4π 4n 4n 4n <n 卜 00 ON S ο τ—Η rH 匡(N f < 匡W 13⁄4 {U u IK u 200844497 Evaluation of Adhesiveness after Dry Etching Evaluation of Adhesion CQ UUQ PQ Q Adhesion Exposure (mJ/cm2) ΙΟ (N 150 150 175 100 200 ."a Μ Β 150 150 〇r-Η 150 150 150 ^ 1 sg % i Fluorination treatment: 100° Fluorination treatment: 100° No treatment: 10° No treatment: 10° No treatment: 10° No treatment : 10° Storage stability of organic decane compound composition < C << U < quantity (% relative to solid content) 0.05 壊m ο (Ν ό m τ-Η 壊 species exemplified compound (103) 1 1 1 exemplified compound (103) exemplified compound (103) exemplified compound (103) 1 1 1 Example 13 Example 14 Example 15 Example 16 Example 17 Example 18 - 006 - 200844497 As shown in Tables 1 to 3 [Κ ' in Examples 3 to 1 In 5 and 17 , the adhesion after dry etching is particularly excellent. Among them, the adhesions in Examples 3 to 8, 11 and 极2 were excellent. The examples 3 to 18 in which the third color pattern forming method of Example 1 is changed as described above have been described. Of course, the same result was obtained even when the third color pattern forming method of Example 2 was similarly changed. Example 1 9 A color filter 'light sheet is manufactured according to an exemplary embodiment (third exemplary embodiment), wherein the third color pattern forms a strip extending in a direction crossing the first color pattern and the second color pattern Patterns, and all the color layers are formed by lithography. The details of the manufacturing method are described below. Formation of the first color pattern and formation of the second color pattern First, the strip R pattern and the strip B pattern are formed in the same manner as in Example 1 except that the mask is changed so that the R pattern has lines and spaces: 1 · 〇 micron and gap : 1 · 〇 micron, and the B pattern has lines and gaps: 1. 〇 micron and gap: 1 · 0 micron. Then, a photoresist pattern was formed in the same manner as in Example 1, except that the area where the pattern was exposed was changed (i.e., the pattern mask) was changed. The resist pattern is formed into a stripe pattern (line: 1 · 〇 micron and gap: 1 · 〇 micron line and gap pattern) extending in a direction intersecting the stripe pattern of the R pattern and the B pattern. In other words, in the formed photoresist pattern, the region where the G pattern (G color pixel) is to be formed is formed into a strip-shaped perforated region extending in a direction crossing the R pattern having a width of 1.0 μm and the B pattern having a width of 1. μm. (Position width: 1 · 〇-99- 200844497 microns). Removal of color pattern R and B pixels were obtained by removing the regions of the G pattern (G pixel) (bar-shaped perforated regions) of the R and B patterns by dry etching under the same conditions as in Example 1. The photoresist was then removed under the same conditions as in Example 1. Formation of Third Color Pattern A G color layer was formed under the same conditions as in Example 1. Then, in the strip-shaped perforated area where the G pattern (G pixel) is to be formed, the G pattern (G, pixel) (which is the third) is subjected to pattern exposure, development, drying, and post-baking under the same conditions as in Example 1. The color pattern) forms a strip pattern except that the area where the pattern is exposed is exposed (ie, the mask pattern). The G pattern (G pixel) is formed into a stripe pattern such that the strip-shaped perforated area which has been formed by etching is filled with the G pattern. The G pattern (G pixel) has a width of 1. 〇 microns. In addition, the surface of the substrate is formed into a planar form. That is, the upper surface of the R pixel, the B pixel, and the G pixel is the same as the height of the substrate. In this way, a color filter array including R pixels, G pixels, and B pixels is obtained. In the color filter array thus obtained, it suppresses the occurrence of a region where the color pixel is not formed in the corner-concentrated region of each color pixel (R pixel, G pixel, and B pixel), and also suppresses color pixels near the boundary of each pixel. The occurrence of a thin film thickness region. This result shows that the above-described method of manufacturing a color filter can solve the limitation of the formation of the drawing -100-200844497, and a finer pattern can be formed. Example 2 0: A color filter is fabricated in accordance with an exemplary embodiment (fourth exemplary embodiment), wherein the third color pattern forms a strip pattern extending in a direction crossing the first color pattern and the second color pattern And all of the first to third color patterns are formed by dry etching and CMP processing. The details of the manufacturing method are described below. Preparation of a color-developing thermosetting composition Preparation of a pigment dispersion A green (G) color, a blue (B) color, and a red (R) color material (components other than a solvent) shown in Tables 4 and 5 below using a kneader. Each was uniformly kneaded. Then, the kneaded products were each subjected to dry dispersion treatment (kneading dispersion) using two rolls. The dispersions which had been subjected to the dry dispersion treatment were each added to the amounts of methyl propylene glycol monomethyl ether acetate shown in Tables 4 and 5 as a solvent component. Then, the resulting mixture was stirred at 2,00 rpm for 30 minutes using a homogenizer, thereby obtaining a green (G) color, a blue (B) color, and a red (R) color dispersion composition in which the pigment was uniformly dispersed. The resulting dispersion compositions were each subjected to a microdispersion treatment using a pellet disperser (trade name: DISPERMAT, manufactured by GETZMANN) having a 0.3 mm pin oxygen particle. Then, the dispersion compositions were each subjected to filtration of a 2.5 μm filter, thereby obtaining pigment dispersions (1) to (3) of the respective colors in which the pigment was uniformly dispersed. Table 5 shows the viscosity of the kneaded product (dispersion) of each pigment dispersion in the kneading dispersion treatment and the microdispersion treatment, and the average particle diameter of the pigment-10 - 200844497 in each pigment dispersion, and the particle diameter of 0.011 The ratio of pigment particles in the pigment granules of ± 0 · 0 〇 5 μm.

The particle size of the pigment was measured by using a solution in which the colored resin composition was diluted with propylene glycol monoethyl acrylate and MICROTRAC UPA 15 0 (trade name, manufactured by Nikkiso C) as a sample. Relatively full methyl ether).? Ltd. -102 200844497 inch « Pigment dispersion: Red (R) Pigment red (PR) 254 80 parts by mass of pigment yellow (PY) 139 20 parts by mass EDAPLAN472 (manufactured by Kusumoto Chemicals Ltd.) 15 Mass parts « gwo S _ ^ Mr plex Φ Φ fc ίΤ> W If ft i: ik 2 Distillation _ tf ^ | § Μ ft ο i Κ] μ m ε- 1 11 K Pigment dispersion (2): Blue (B ) Pigment Blue (PB) 15:6 125 parts by mass I Pigment Violet (PV) 23 25 parts by mass mm Zhao 懿j々ί £ ft ]| 6 ^ ^ O 二〇η ε Si Q w When A « I Yanxia ^ Mr Install Φ Φ fezhe_ Lake·13⁄4 fr IE|ffifl ^ Distillation_ if ^ 鍫沄| g E: 4, _ 〇〇am mi N3 氍K) m ε- ] 氍11 Pigment Dispersion (1): Green (G) Pigment Green (PG) 36 90 parts by mass of pigment green (PG) 7 25 parts by mass of pigment yellow (PY) 139 40 parts by mass of PLAAD ED151 (manufactured by Kusumoto Chemicals Ltd.) 20 parts by mass «〇w 〇§ ¢1 S _ 媛媛 φ Φ fe iM _ & SI: iM S distillation _ E iU S g propylene glycol monomethyl ether ethyl acetate: 625 parts by mass of colorant dispersant measurement solvent 丨s I — 200844497 ώ C/3 " Cd η , 00 s pigment dispersion = Μη ε ο ο θ' 卜 &Quc;c5 Ρη ε to rH η inch rH Ο ο Μ ο 寸 · PQ _ (ZJ C/3 (N d Ρη S "cd SH _ ί Φ 骏ο ο ο B ^T) (N m r"H Ο ο νο 〇\ ο ϊ "ίδ η . C/3 S 1 φ 魆ΗΗ ε ο ο ΙΟ ΙΤ) Oh ε m rH =L τ—Η ο ο _ _( Ο 00 Os m JLJ *-LA Side Μ vrrnr φ 4π micro-dispersion viscosity ί pigment average particle ί m 赛ε n in ο ο ο +ι rH Ο ο 200844497 Preparation of colored hot firmware composition of polyfunctional epoxy resin "EHPE-3150" (trade name, The pigment dispersion liquid (1) is added in an amount of 20 parts by mass, the pigment dispersion liquid (2) is added in an amount of 6 parts by mass, and the pigment dispersion liquid (3) is added in an amount of 8 parts by mass, as manufactured by Daicel Chemical Industries, Ltd. . Further, as a hardening catalyst, 1B2PZ" (trade name, manufactured by Shikoku Chemicals Corporation) was added to each pigment dispersion in an amount of 1 /5 (mass ratio) relative to the polyfunctional epoxy resin. After dissolving the catalyst The mixture was each diluted with ethyl propylene glycol monomethyl ether acetate so that the solid content in each composition was 15 mass% without causing pigment adhesion. In this way, three colored thermosetting compositions having high pigment concentrations were obtained, R, G. And B, the pigment content of the pigment dispersion liquid (1) was 7 2.0% by mass, the pigment content of the pigment dispersion liquid (2) was 71.0% by mass, and the pigment content of the pigment dispersion liquid (3) was 75.1% by mass. Preparation of Light Sheet Formation of First Color Pattern The R color layer was formed in the same manner as in Example 2 except that the colored thermosetting composition R was used instead of the red light curable composition SR-500 00L. The film thickness after thermosetting was 0.4. Then, the transparent film 1 and the photoresist pattern were formed in the same manner as in Example 2 except that the photomask was changed, and then the photoresist was removed by dry etching, thereby obtaining a transparent film 1 in the upper layer. The R pattern of the first stop layer. In this case, the R pattern is formed into a stripe pattern having a line size of 1 · 〇 micron and a gap size of 1. 〇 micron. The formation of the second color pattern is -105- 200844497 The B color layer was formed in the same manner as in Example 2 except that the colored thermosetting composition B was used instead of the blue photocurable composition SB - 500 L. The film thickness after thermosetting was 〇. 7 μm. Then at the slurry flow rate: 150 ML/min, wafer pressure · 0.2 psi, and retaining ring pressure: 1 〇 psi, using CMP honing device (trade name: BC-15, manufactured by Kemet Japan), SEMISPERSE25 (registered trademark, Cabot) Manufactured: Pure water = 1:10 as a slurry, and expanded polyurethane (trade name: Whitex series, manufactured by Kemet Japan) was honed as a honing pad until the transparent film 1 on the R pattern was exposed. The transparent film 2 and the second stopper layer were formed on the R pattern and the transparent film 1 in the same manner as in Example 2. Then, the photoresist pattern was carried out in the same manner as in Example 2 except that the exposed regions having different acceptance patterns were formed (i.e., changed). Mask The photoresist pattern (that is, the photoresist pattern as an etching mask in the dry etching for removing the color pattern). The pattern is formed into a strip pattern extending in a direction crossing the R pattern and the B pattern, and the line size is i. The micron and the gap size are 1.0 μm. In other words, in the thus formed photoresist pattern, the region where the G pattern (G color pixel) is to be formed is formed to have a width of 1.0 μm and a width of 1. μm. A strip-shaped perforated area (hole width: 1 · 〇 micron) extending in the direction in which the B pattern intersects. Removal of 1-color pattern Next, under the same conditions as in Example 2, dry etching was performed from the transparent film -106-200844497 1. The transparent film 2, the R pattern, and the B pattern were removed from the region where the G pattern (G pixel) was to be formed. The photoresist was then removed under the same conditions as in Example 2. Formation of Third Color Pattern A G color layer was formed in the same manner as in Example 2 except that the colored thermosetting composition G was used instead of the green photocurable composition SG-5 00 0 L. The film thickness after thermosetting was 0.6 μm. In this case, the G color layer on the transparent film 2 has a film thickness of 500 nm. Then, using a CMP honing device (trade name: BC-15, manufactured by Kemet Japan) under the conditions of slurry flow rate: 150 ml/min, wafer pressure: 〇·2 psi, and holding ring pressure: 1.0 p si, SEMISPERSE25 (registered trademark, manufactured by C ab 〇t): pure water = 1 : 1 〇 as a slurry, and expanded polyurethane (Whit ex series, trade name, manufactured by Kemet Japan) as a honing pad Grind until the R pattern and the transparent film 2 on the B pattern are exposed. In this way, a G pattern (G pixel) which is a third color pattern is formed in the strip-shaped perforated area where the G pattern (G pixel) is to be formed. The G pattern (G pixel) is formed in a stripe pattern in such a manner as to be embedded in a strip-shaped perforated area formed by uranium engraving. The G pattern (G pixel) has a width of 1 · 0 μm. In addition, the surface of the substrate is formed into a planar form. That is, the upper surface of the transparent film 2 laminated on the R pixel, the upper surface of the transparent film 2 laminated on the B pixel, and the upper surface of the G pixel are the same as the height of the substrate. -107- 200844497 In this way, a color filter array having R pixels, G pixels, and B pixels is obtained. In the color filter array thus obtained, it suppresses the occurrence of a region where the color pixel is not formed in the corner-concentrated region of each color pixel (R pixel, G pixel, and B pixel), and also suppresses color pixels near the boundary of each pixel. The occurrence of a thin film thickness region. This result shows that the above-described method of manufacturing a color filter can solve the limitation of pattern formation, and a finer pattern can be formed. Example 2 1 Formation of Color Filter A ruthenium substrate having R pixels and B pixels was obtained in accordance with the method of Example 19 before forming the third color pattern. In other words, the substrate has a strip-shaped region where a G pattern (G pixel) is to be formed, which has been removed from the strip R and B patterns by dry etching, and the photoresist has been removed from the substrate, and the substrate has been heated. After heating, the surfaces of the R pixels and the B pixels existing on the substrate having the R pixel and the B pixel were subjected to the adhesion improving treatment under the same conditions as in Example 3, and the colored light was used under the same conditions as in Example 3. The curable composition P1 thus forms a G color layer. Pattern exposure and development such that the G color layer thus formed is sequentially subjected to pattern exposure, development, rinsing, drying, and post-baking treatment under the same conditions as in the case of forming the third color layer in Example 19, except for the pattern exposure system. The optimum exposure amount (Ε.^) determined using Example 3 was carried out, and a G pattern (G pixel) of the third color layer was formed in the strip pattern region where the G pattern (G pixel) -108-200844497 was to be formed. The G pattern (G pixel) is formed by embedding each G pixel in a region formed by the above engraving (this region is a region where the G pattern (G pixel) is to be formed by the dry uranium engraving from the R pattern and the B pattern). The strip pattern 'each G pixel has a width of 1.0 micron. In addition, the surface of the substrate is formed into a planar form. That is, the upper surface of the R pixel, the B pixel, and the G pixel is the same as the height of the substrate. In this way, a color filter array having R pixels, G pixels, and B pixels is obtained. In the color filter array thus obtained, it suppresses the occurrence of a region where the color pixel is not formed in the corner-concentrated region of each color pixel (R pixel, G pixel, and B pixel), and also suppresses color pixels near the boundary of each pixel. The occurrence of a thin film thickness region. This result shows that the method of manufacturing a colored calender is not used to solve the limitation of pattern formation, and a finer pattern can be formed. Evaluation The storage stability of the colored photocurable composition, the contact angle after the adhesion improving treatment, and the optimum exposure amount were evaluated under the same conditions and standards as in Example 3. ^, adhesion exposure, adhesion. The evaluation results are shown in Tables 6 and 7. Example 2 2Xin 2 8 A color filter was produced in the same manner as in Example 2, except that the types and amounts of the designated organic chopane compounds of Example 21 were changed as shown in Tables 6 and 7, and Example 2 1 was evaluated in the same manner. The evaluation results are shown in Tables 6 and 7. -109- 200844497 Example 2 9 A color filter was produced in the same manner as in Example 25 except that the plasma fluorination treatment was carried out instead of HMDS vapor deposition under the following conditions to improve the adhesion of Example 25, and as in the example Evaluation in the same way as 2 5 . The results of the evaluation are shown in Tables 6 and 7. Conditions for plasma fluorination treatment Using dry etching equipment (trade name: u-621 ’ Hitachi

Hi-Technologies Corp.), RF power: 800 watts, antenna bias: 400 watts, wafer bias: 200 watts, indoor pressure: 2.OPa, substrate temperature: 50 ° C, and species of mixed gases Flow rate: Ar: 8 00 ml/min and CF4: 20 ml/min, plasma treatment was carried out for 5 seconds. Example 3 0 A color filter was produced in the same manner as in Example 21 except that the plasma fluorination treatment was carried out instead of HMDS vapor deposition under the same conditions as in Example 29 to improve the adhesion of Example 21, and as in the example 2 1 is evaluated in the same way. The evaluation results are shown in Tables 6 and 7. Example 3 1 A color filter was produced in the same manner as in Example 28 except that plasma fluorination treatment was carried out instead of HMDS vapor deposition under the same conditions as in Example 29 to improve the adhesion of Example 28, and as in the example Evaluation in the same way as 2 8 . The evaluation results are shown in Tables 6 and 7. Example 3 2 A color filter was produced in the same manner as in Example 29 except that the exemplified compound (103) was not added to the colored photocurable composition, and was evaluated in the same manner as in Example 29-110-200844497. The evaluation results are shown in Tables 6 and 7 °. Example 33 A color filter was produced in the same manner as in Example 21 except that the amount of the exemplified compound (103) was changed to the amount shown in Tables 6 and 7 and the adhesion was not performed. The treatment was modified and evaluated in the same manner as in Example 21. The results of the evaluation are shown in Tables 6 and 7. Examples 3 4 and 3 5 A color filter was produced in the same manner as in Example 33 except that the amounts of the compound (1 0 3 ) were changed to the amounts shown in Tables 6 and 7, and as in Example 3 3 Evaluate in the same way. The evaluation results are shown in Tables 6 and 7. Example 3 6 A color filter was produced in the same manner as in Example 33 except that the exemplified compound (1 0 3 ) was not added to the colored photocurable composition, and was evaluated in the same manner as in Example 33. The evaluation results are shown in Tables 6 and 7. -111- 200844497 担-1 1 1 Adhesive evaluation <<<<<< PQ u Adhesion exposure (mJ/cm2) ooo ο ^Τ) ο inch o inch 125 140 so 瘃u? ^ 丹 150 150 150 150 150 J 150 150 150 m | Si Temperature 鹚: % % Secret HMDS: 40° HMDS: 40. HMDS: 40° HMDS: 40° HMDS: 40° ! HMDS: 40° HMDS: 40° HMDS: 40. Storage stability of the compound <<<< PQ <<< 4π _ IS VO 'O 'Ο <N {m IS ooo ο rH oo nn -Kr- s rN o ΓΛ s /0^ Ss /N m O 1 1 £ I 1 1 1 1 IH 4n φ 4n 4n 4n Γ+Ν*1 lie 匡匡m rH (N (N (N m (N CN \〇(N 卜CN 〇〇<N匡匡匡匡匡mu IK IK H Μ IK {_ 200844497 L^ 担-11 1 Adhesive evaluation << PQ UUQ PQ Q Adhesion exposure (mJ/cm) 〇ο ^Τ) in (N ▼- H 150 150 175 100 200 Έ2 瘃-B 〇Τ-〇Τ 150 150 150 150 150 150 150 m C Persuasion m ^ ffi ag Si Fluoride: 1 〇〇 ° Fluoride: 1 〇〇 ° Fluoride: 100 ° Fluorine Chemical: 100° No treatment: 10° No treatment: 10° No treatment: 10° 1 No treatment: 10° Storage stability of organic decane compound compounds <<<<<< U < Content (relative % of solids) (N y—i ν〇ο 0.05 壊cn d CN 〇cn ▼-Η 壊 type formula compound (103) exemplified compound (103) exemplified compound Compound (103) 1 exemplified compound (103) exemplified compound (103) exemplified compound (103) 1 Example 29 Example 30 Example 31 Example 32 Example 33 Example 34 Example 35 Example 36 200844497 As shown in Tables 6 and 7, in Example 21 to Among the 33 and 35, the adhesion after drying was particularly excellent. Among them, Examples 21 to 26, 29 and 30 were extremely excellent. Examples of the third color forming method in which Example 19 were changed as described above were described. Of course, the same result is obtained even when the third color pattern forming method is similarly changed. Examples 1 to 36 in which color filters including R, G, and B color patterns are formed on the germanium substrate have been described above. . When the solid element is manufactured, it is possible to use a substrate for a solid-state imaging element on which a photodiode, a light shielding film, a film, or the like is provided instead of the ruthenium substrate. For example, solid-state photography with excellent color reproduction power can be manufactured as follows. First, a light-shielding film made of tungsten is formed on a support having a photodiode and a transfer electrode, and the light-shielding film has a device protective film made of tantalum nitride or the like on the light-receiving region of the photodiode to provide a light film and light on the light-shielding film. The light receiving region of the diode (i.e., the perforation of the light shielding film) surface, and the color film according to any of the methods of Examples 1 to 36 of the present invention are provided on the protective film of the device. It is then applied as a light collecting unit to the color filter. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a plan view showing a first embodiment of the present invention and a third embodiment, and FIG. 1B is a cross-sectional view taken along line A- of FIG. 1A; FIG. The first embodiment of the present invention is a plan view of a specific embodiment and a third embodiment, and FIG. 2B is a pattern of a viscous pattern in the A-etch along the line of FIG. 2A, and an example of a 20-piece (photographed protective image element) The entire color filter lens of the cover is shown as A', and the cut-away view of -114-200844497 is taken as the example A'; the third embodiment is the first exemplary embodiment and the third example of the present invention. The plan view of the specific embodiment, and FIG. 3B is a cross-sectional view taken along line A-A' of FIG. 3A, and FIG. 4A is a plan view of the first exemplary embodiment and the third exemplary embodiment of the present invention. And FIG. 4B is a cross-sectional view taken along line A-A' of FIG. 4A; FIG. 5A is a plan view showing a first exemplary embodiment of the present invention, and FIG. 5B is a line A along line 5A; -A' is taken as a cut-away view, and Figure 5C is a cut-away view taken along line B-B' of Figure 5A; Figure 6A is the same 1 is a plan view of a specific embodiment, FIG. 6B is a cross-sectional view taken along line A-A' of FIG. 6A, and FIG. 6C is a cross-sectional view taken along line B-B5 of FIG. 6A; 7A is a plan view showing a first exemplary embodiment of the present invention, FIG. 7B is a cross-sectional view taken along line A-A' of FIG. 7A, and FIG. 7C is a line B-B' along line 7A. FIG. 8A is a plan view showing a first embodiment of the present invention, FIG. 8B is a cross-sectional view taken along line A-A' of FIG. 8A, and FIG. 8C is a view along line 8A. FIG. 9A is a plan view showing a second embodiment of the present invention and a fourth exemplary embodiment, and FIG. 9B is a line A-A' along line 9A. FIG. 10A is a plan view showing a second embodiment of the present invention and a fourth exemplary embodiment, and FIG. 10B is taken along line A-A'-115-200844497 of FIG. 10A. FIG. 1A is a plan view showing a second embodiment of the present invention and a fourth exemplary embodiment, and FIG. 1B is a cross-sectional view taken along line AA′ of FIG. 1 2 A is a plan view showing a second embodiment of the present invention and a fourth exemplary embodiment, and FIG. 12B is a cross-sectional view taken along line A-A' of FIG. 12A, 1 3 A Figure 2 is a plan view showing a second embodiment of the present invention and a fourth exemplary embodiment, and Figure 13B is a cross-sectional view taken along line A-A' of Figure 13A, and Figure 14A is the first embodiment of the present invention. 2 is a plan view showing a specific embodiment and a fourth exemplary embodiment, and FIG. 14B is a cross-sectional view taken along line A-A' of FIG. 14A; FIG. 15A is a plan view showing a second exemplary embodiment of the present invention; Fig. 15B is a cross-sectional view taken along line A-A' of Fig. 15A, and Fig. 15C is a cross-sectional view taken along line B-B' of Fig. 15A; Fig. 16A is a second view of the present invention A plan view of a specific embodiment is illustrated, a 16B is a cross-sectional view taken along line AA' of Fig. 16A, and a 16C is a cross-sectional view taken along line B-B' of Fig. 16A; A second embodiment of the present invention is a plan view of a specific embodiment, a 17B is a cross-sectional view taken along line A-A' of FIG. 17A, and a 17C is a line B along the 17A. -B' is a cutaway view; Fig. 18A is a plan view showing a second exemplary embodiment of the present invention, and Fig. 18B is a cross-sectional view taken along line A-A' of Fig. 18A, and Fig. 18C-116 - 200844497 is a cutaway view taken along line LB5 of Fig. 18A; Fig. 19A is a plan view showing a second exemplary embodiment of the present invention, and Fig. 19B is a cutaway view taken along line A-A' of Fig. 19A; And Fig. 19C is a cross-sectional view taken along line BB' of Fig. 19A; Fig. 20A is a plan view showing a second exemplary embodiment of the present invention, and Fig. 20B is a line along line A of Fig. 20A A' is taken as a cutaway view, and 20C is a cutaway view taken along line B-B' of Fig. 20A; Fig. 21A is a plan view showing a third exemplary embodiment of the present invention, and Fig. 21B is taken along the line 21A is a cross-sectional view taken along line A-A', and FIG. 21C is a cross-sectional view taken along line B-B' of FIG. 21A; FIG. 22A is a second exemplary embodiment of the present invention Fig. 22B is a cross-sectional view taken along line A-A' of Fig. 22A, and Fig. 22C is a cross-sectional view taken along line B-B' of Fig. 22A; Fig. 2A is a view of the present invention The second example shows specific Figure 23B is a plan view taken along line A-A' of Fig. 23A, and Fig. 23C is a cutaway view taken along line B-B' of Fig. 23A; Figure 2 is a plan view showing a second embodiment of the present invention, Figure 24B is a cross-sectional view taken along line A-A' of Figure 24A, and Figure 24C is a line B-B' along line 2 4 A FIG. 25A is a plan view showing a fourth embodiment of the present invention, and FIG. 25B is a cross-sectional view taken along line A-A' of FIG. 25A, and FIG. 25C is a second section. FIG. 26A is a plan view showing a fourth embodiment of the present invention, and FIG. 26B is a cross-sectional view taken along line A-A' of FIG. 26A, and 26C-117-200844497 is a cross-sectional view taken along line BB' of Fig. 26A; Fig. 27A is a plan view showing a fourth exemplary embodiment of the present invention, and Fig. 27B is a line A along line 27A -A' taken as a cutaway view, and Fig. 27C is a cutaway view taken along line B-B' of Fig. 27A; Fig. 28A is a plan view showing a fourth exemplary embodiment of the present invention, and Fig. 28B is a plan view AA along line 28A 'That is taken as a cut-away view, and FIG. 28C is a cut-away view taken along line B-B' of FIG. 28A; FIG. 29A is a plan view showing a fourth exemplary embodiment of the present invention, and FIG. 29B is a view along line 29A FIG. 30A is a cross-sectional view taken along line BB' of FIG. 29A; FIG. 30A is a plan view showing a fourth embodiment of the present invention, Figure 30B is a cross-sectional view taken along line A-A' of Figure 30A, and Figure 30C is a cross-sectional view taken along line B-B' of Figure 30A; Figure 3 shows the third and Four examples show a color filter of a specific embodiment in which a color filter is divided into pixel units of a solid-state imaging element and has reference symbols R (red), G (green), and B (blue); A plan view describing a conventional method of manufacturing a color filter, and FIG. 32B is a cross-sectional view taken along line A-A' of FIG. 32A; FIG. 3 3A is a conventional method for manufacturing a color filter. The plan view, and Fig. 33B are taken along line AA of Fig. 33A, and taken as a cutaway view; Fig. 34A is a plan view showing a conventional method of manufacturing a color filter, and the third 4B is a cross-sectional view taken along line A-A' of Fig. 34A; Fig. 35A is a plan view showing a conventional method of manufacturing a color filter, and Fig. 35B is a line A along line 35A -A' and its cut-away view; and -118- 200844497 Figure 36A is a plan view depicting a conventional method of manufacturing a color filter, and Figure 36B is a section taken along line A-A' of Figure 36A Figure. [Main component symbol description] 10 Support 1 2 Red layer 14 Red pattern 16 Blue layer 18 Blue pattern 20 Area for forming green pixels 22 Resistive pattern 24 Green layer 26 Green pattern 28 Red pixel 30 Blue pixel 32 Green pixel 34 - - abort layer 36 second stop layer 42 - * color layer 44 - * color pixel formation 1E field 46 unnecessary 13⁄4 field 47 mask 48 - * color pixel 50 second color pixel 52 third Color Pixel-119- 200844497 54 1E Domain 56 without Color Pixels Color Pixel Film Thickness Field 120 Region for Green Pixels 122 Photoresist Pattern 124 Green Layer 126 Green Pattern 128 Red Pixel 130 Blue Pixel 132 Green Pixel-120-

Claims (1)

200844497 X. The scope of application for patents: including the color of the case chart 1 The picture of the first legal plan The complex light furnace is made of color on the color of the body in the Omll species. The shape is not on the support. Re-emphasizing the color of the case of the domain area; the case of the case: In addition to the minute and the second, one of the M-type to the dry, the case of the case, the color of the case, the color, the color, the second, the first, the case, the color, the shape, the shape, the division And the color of the domain area and the case map. Color scheme color map one color first color divided into three parts divided into de-shaped has been in the area, the upper body of the case in the picture of its French film. The light color filter color is the color of each color. The color of the color is 1 color. The second and the second case of the film and the color of the case. Please use the color of the film in the second part of the film. In the first paragraph, the first color layer is formed on the support, the first color layer is exposed, and the exposed product is developed. And (2) comprising: forming a first color layer on the support, forming a photoresist pattern on the first color layer using the photoresist, and dry etching the first color layer using the photoresist pattern as an etch mask method. 4. The method of manufacturing a color filter according to claim 1, wherein the second color pattern is formed by the following method (1), or a method comprising at least one of the following methods (2) and (3): (1) A method comprising forming a second color layer on a support for forming a first color pattern, and exposing the second color layer, and then developing; -121 - 200844497 (2) - including forming a first color pattern Forming a second color layer on the support, forming a photoresist pattern on the second color layer using the photoresist, and using a photoresist pattern as the engraved mask to dry the uranium engraved second color layer; and (3) The method includes forming a second color layer on a support forming the first color pattern, and performing a planarization of at least the second color layer. 5. The method of manufacturing a color filter according to claim 1, wherein the third color pattern is formed by the following method (1), or a method comprising at least one of the following methods (2)' and (3) (1) A method comprising forming a third color layer on a support forming a first color pattern and a second color pattern, and exposing the third color layer, and then developing; (2) being included in forming the first Forming a third color layer on the support of the color pattern and the second color pattern, forming a photoresist pattern on the third color layer using the photoresist, and dry etching the third color layer using the photoresist pattern as an etch mask; And V (3) A method comprising forming a third color layer on a support forming the first color pattern and the second color pattern, and performing planarization of at least the third color layer. 6. The method of manufacturing a color filter according to claim 4, wherein the planarization comprises an etch back process (which etches all exposed surfaces of the color layer) and a honing process (which hones all exposed surfaces of the color layer) At least one of the methods of manufacturing a color filter according to claim 1, wherein the step of -122-200844497 includes after (b) forming the second color pattern and before (C) removing the partial color pattern Forming a second stop layer on the first color pattern and the second color pattern, wherein: removing the partial color pattern includes removing at least a portion of at least one of the first color pattern and the second color pattern in an area where the third color pattern is to be formed And removing the second stop layer in the region where the third color pattern is to be formed; and forming the third color pattern includes forming a third color layer on the support forming the first color pattern, the second color pattern, and the second stop layer And dry etching the third color layer until the second stop layer is exposed. 8. The method of manufacturing a color filter according to claim 1, wherein the forming the first color pattern comprises forming a first color layer on the support, and forming a first stop layer on the first color layer; and forming The second color pattern includes forming a second color layer on the support forming the first color pattern, and dry etching the second color layer until the first stop layer is exposed. 9. The method of manufacturing a color filter according to claim 1, wherein the first color pattern and the second color pattern are formed in such a manner that surfaces of the first color pattern and the second color pattern are in contact with each other. The method of manufacturing a color filter of claim 1, wherein forming the first color pattern, forming the second color pattern, or forming the third color pattern comprises: at least one after dry etching Adhesive improvement treatment is applied; -123 - 200844497 A colored layer is formed on the support to which the adhesion improving treatment has been applied, the colored layer is exposed; and the exposed resultant is developed to form a color pattern. A method of producing a color filter according to the first aspect of the invention, wherein the adhesion improving treatment comprises at least one of adding an adhesion aid or a fluorination treatment using a plasma. 1 2 - A method of producing a color filter according to claim 10, wherein the color layer is coated with an organic decane in an amount of from 0.05 to 1.2% by mass based on the total solid content of the relatively colored hardenable composition The coloring composition of the compound is formed. The method of manufacturing a color filter according to claim 1, wherein the forming the first color pattern, forming the second color pattern, or forming the third color pattern comprises: at least not supporting the support after dry etching Applying an adhesion improving treatment to form a color layer by coating a support with a color hardening composition comprising an organic decane compound in an amount of 0.3 to 1.2% by mass relative to the coloring hardenable composition; The colored layer is exposed; and the exposed resultant is developed to form a color pattern. A method of manufacturing a color filter according to the first aspect of the invention, wherein the area in which the third color pattern is to be formed includes a checkered pattern area. The method of manufacturing a color filter according to claim 1, wherein the area in which the third color pattern is to be formed includes a stripe pattern extending in a direction crossing the first color pattern and the second color pattern. -124- 200844497 1 6. A color filter manufactured by the method of manufacturing a color filter of claim 1 of the patent application. 1 7. A solid-state photographic element comprising a color filter of claim 16 of the patent application. -125-