JP2010085701A - Method of manufacturing color filter - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a color filter which improves rectangularity of each color pixel of the color filter and prevents the occurrence of residuals when forming red pixels. <P>SOLUTION: After stripe-shaped red patterns 27 are formed as the first color on a support member by using a dry etching method, a blue layer 33B is formed, and the red patterns and the blue layer are dry-etched to form blue pixels 20B, red pixels 20R, and green pixel formation regions 39. Next, a green layer is formed, and all of an exposed surface of the support member is planarized till the red pixels 20R are exposed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a color filter provided in a solid-state imaging device or the like.

  The solid-state imaging device is provided with a color filter in which colored pixels of a plurality of colors of red pixels, green pixels, and blue pixels are two-dimensionally arranged on a support such as a semiconductor substrate. In recent years, the increase in the number of pixels of a solid-state imaging device has been remarkable, and the pixel size has been significantly reduced when compared with a conventional solid-state imaging device having the same inch size. Also, as the pixel size decreases, the performance requirements for color separation become stricter. To maintain device characteristics such as color shading characteristics and color mixing prevention, the performance required for color filters is reduced to thinner, rectangular, and between each colored pixel. Further, there is a demand for performance such as eliminating an overlap region where colors overlap.

  As a method for producing such a color filter, a photolithographic method has been widely used. In the photolithography method, a colored photosensitive composition is applied and dried on a support to form a colored layer, and then the colored layer is subjected to pattern exposure, development, and baking to form a colored pixel of the first color (for example, green). In the same manner, the remaining colored pixels are formed. As the colored photosensitive composition, for example, an alkali-soluble resin containing a photopolymerizable monomer and a photopolymerization initiator is used. The photolithographic method can reduce initial investment because the manufacturing process conforms to the photolithographic process of semiconductor manufacturing. In addition, the photolithographic process can be used to manufacture color filters with high-precision exposure and overlay accuracy. Widely used as a preferred method.

  By the way, as shown in FIG. 25A, in the color filter 2 formed by the photolithography method, the colored pixels are arranged in the region where the corners of the respective colored pixels (red pixel 3, green pixel 4, blue pixel 5) are gathered. As a result, a blank region 6 in which no is formed is formed. Moreover, as shown to (B), the dent 7 where the film thickness of each coloring pixel becomes thin will arise in the vicinity of the boundary between each coloring pixels 3-5. This is because each of the colored pixels 3 to 5 is as designed because the mask bias applied to the photomask for pattern exposure is not optimized and the curing efficiency of the colored photosensitive composition with respect to the exposure light source is low. It is because it is not formed with the dimension and shape.

  As countermeasures against such problems, studies such as optimization of mask bias and the like and improvement of curing efficiency of the colored photosensitive composition with respect to an exposure light source have been limited. Therefore, after forming colored pixels (red pixels, blue pixels) for the second and subsequent colors in the region surrounded by the green pixels formed in a checkered pattern, a thermal reflow process is performed to perform the second and subsequent colored pixels. A technique is known that suppresses the generation of the blank area 6 and the dent 7 described above by heat-flowing the colored pixels and filling the area with colored pixels for the second and subsequent colors (see Patent Document 1).

  However, Patent Document 1 is a technology that is easily influenced by the performance and process conditions of the colored photosensitive composition used for forming the colored pixels for the second and subsequent colors. For example, the colored pixels are likely to be filled in a region having a high temperature. On the other hand, there is a problem that the heating distribution of the support is reflected in the embedding property as it is, for example, the coloring is difficult to be buried in the region where the temperature is low.

  In addition, when forming a color filter using a photolithographic method, a high-resolution technique of less than 2.0 μm size is required to cope with the recent miniaturization and high definition of solid-state imaging devices. The photolithographic method is reaching the limit of pattern formation in terms of resolution. For this reason, the above-mentioned problem (occurrence of blank area 6 and dent 7) of the photolithographic method becomes more and more remarkable.

  In addition, a technique using a dye has been proposed as a technique for dealing with miniaturization and high definition of a solid-state imaging device by a photolithography method. However, curable compositions containing dyes are generally inferior to pigments in terms of light resistance, thinning, and ease of changing transmission spectral characteristics, for example. In particular, in the case of the use for producing a color filter for a solid-state imaging device, a film thickness of 1.0 μm or less is required, so that a large amount of dye must be added to the curable composition. There are various problems such as insufficient pattern formation, remarkably difficult pattern formation, and the like.

  Incidentally, a dry etching method is known as a method that is thinner and more effective for forming a fine pattern than a photolithography method. The dry etching method has been conventionally employed as a method for forming a pattern (each colored pixel) in a rectangular shape, and a pattern forming method in which a photolithographic method and a dry etching method are combined has been proposed (for example, Patent Document 2, 3).

In Patent Documents 2 and 3, a first color layer is formed on a support, and the first color layer is patterned by a dry etching method to form a first color pixel. A technique for sequentially forming colored pixels after the color by a photolithography method is described. In Patent Document 2, the colored layer of the first color is formed by a coating film made of a colored thermosetting composition, and in Patent Document 3, the colored layer of the first color is formed by a vapor deposition method.
JP 2006-292842 A JP 2001-249218 A JP 2006-339376 A

  However, in Patent Document 2 and Patent Document 3, the colored pixels of the first color can be formed in a rectangular shape, but the colored pixels of the second color and the third color are formed by the photolithography method. Legal issues arise. Furthermore, the colored layer of the first color formed by vapor deposition of Patent Document 3 can be easily thinned, but it is difficult to ensure solvent resistance. For this reason, when peeling the mask (photoresist) for dry etching, there is a possibility that the color may come off due to the peeling solvent.

  In the conventional color filter manufacturing method using the photolithographic method including Patent Document 2 and Patent Document 3, there is a limit (lower limit) in the size of the pattern (each colored pixel) that can be formed, and further, pattern formability and colored pixels It is difficult to ensure the reliability of the (colored layer).

  Further, in Patent Documents 2 and 3, after the colored layers of the first color to the third color are formed on the support, each colored layer is patterned to form each colored pixel, that is, a plurality of isolated patterns (island patterns). Direct formation. Such a plurality of isolated patterns include a rectangular shape of the cross-sectional shape in the width direction of the pattern (hereinafter simply referred to as a pattern or a rectangular shape of a colored pixel), an angle of the isolated pattern when the isolated pattern is observed from the upper surface (hereinafter simply referred to as a simple pattern). It is difficult to suppress roundness of corners of isolated patterns). This is because, in the formation of an isolated pattern by the photolithography method, it is difficult to sufficiently increase the edge contrast of the pattern (exposure image) formed on the colored layer at the time of exposure. This is because of the occurrence of symptoms. In addition, since the rectangular shape of the cross section is affected by the pattern polymerizability (photopolymerizability of the colored layer) and developability, it is difficult to form the cross section at an acute angle as long as the photolithography method is used.

  Furthermore, when forming an isolated pattern by the photolithography method, the colored photosensitive composition particularly used for the color filter material is because the rectangularity of the pattern is inferior to that of a general photoresist. In addition, when an isolated pattern is formed by a dry etching method, a resist pattern (mask) for dry etching is formed by a photolithography method. The degree of corner roundness is better suppressed than when a colored layer is formed by photolithography. However, it is difficult to completely suppress the rounded corners of the isolated pattern due to the proximity effect during exposure.

  Furthermore, in Patent Documents 2 and 3, when a red pixel having a red pigment (especially a red pigment) is exposed and developed by photolithography as a colored pixel for the second and subsequent colors, a red pixel is formed. Removal of residue by is very difficult. This is because, since the red layer has a small absorption coefficient of exposure light, the exposure light easily reaches the substrate, and the exposure light is diffusely reflected by the substrate and goes around to the unexposed portion of the red layer. In order to suppress the generation of such residues, it is necessary to take measures such as adding an alkali-soluble resin to the red layer more than necessary, so the photolithographic method has reached the limit of thinning the red layer. Yes.

  The present invention has been made to solve the above problem, and further improves the rectangularity of the colored pixels while improving the formation limit of the pattern (each colored pixel) and making the pattern finer and thinner, and An object of the present invention is to provide a color filter in which a red layer residue does not occur and a method for producing the same.

  In order to achieve the above object, a method for producing a color filter according to the present invention includes a color filter production method for producing a color filter in which a plurality of colored pixels are two-dimensionally arranged on a support. And a first color pattern forming step of forming a stripe-shaped first color pattern made of a thermosetting composition of the first color containing at least a red pigment; and on the support on which the first color pattern is formed. A second color layer forming step of forming a second color layer composed of a thermosetting composition of the second color, and patterning the first color pattern and the second color layer by a dry etching method, A patterning step of forming a first color pixel and a second color pixel on the support and forming a third color pixel formation region for forming a third color pixel; and a third color pixel formation region , The third And having a third color pixel forming step of in the thermosetting composition forming the third color pixel.

  Preferably, the first color thermosetting composition contains yellow dye.

  In the first color pattern forming step, a first color layer forming step for forming a first color layer comprising the thermosetting composition of the first color on the support, and the first color layer A resist pattern forming step of forming a resist pattern corresponding to the first color pattern using a photoresist; and the first color pattern is dry-etched using the resist pattern as a mask to form the first color pattern It is preferable to have a dry etching process for forming the film.

  In the second color layer formation step, a coating film of the thermosetting composition of the second color is formed on the support on which the first color pattern is formed, and the coating film is baked to form the coating film. It is preferable to form the second color layer.

  In the third color pixel forming step, the thermosetting composition of the third color is formed on the support on which the first color pixel, the second color pixel, and the third color pixel formation region are formed. A third color layer forming step for forming a third color layer, and at least until the three color layer is removed from above the first color pixel and the second color pixel. It is preferable that a flattening process is performed to form a third color pixel by performing a flattening process on the surface.

  In the patterning step, the second color layer is patterned to integrally form the second color pixel and a second color pattern covering the surface of the first color pixel, and the planarization step includes After removing the third color layer on the first and second color pixels, until the second color pattern is removed from the first color pixel, the second color pattern and the second color It is preferable to perform a flattening process on each surface of the pixel and the third color pixel.

  The planarization process is preferably performed by at least one of an etch back process and a polishing process.

  When the planarization process is performed by the polishing process, it is preferable to perform a water washing process for washing the surface to be polished after the polishing process, and a dehydration process process for performing a dehydration process on the surface to be polished after the water washing process.

  Prior to the resist pattern forming step, there is provided a stopper layer forming step of forming a transparent flattening stopper layer on the first colored layer, and the resist pattern forming step includes forming the resist pattern on the stopper layer. The dry etching step uses the resist pattern to dry-etch the stopper layer in a stripe shape corresponding to the first color pattern, and the patterning step forms the stripe-shaped stopper layer, The patterning is preferably performed in a shape corresponding to the first color pixel.

  In the method for producing a color filter of the present invention, a stripe-shaped first color pattern including at least a red pigment is formed on a support, and a second color coloring layer is formed on the support on which the first color pattern is formed. Further, after patterning the first color pattern and the second colored layer to form areas for forming the first color pixel, the second color pixel, and the third color pixel, the third color pixel is formed in this area. By forming, the number of steps for forming an isolated pattern can be reduced as compared with the prior art. Thereby, since the roundness of the corner of each colored pixel can be suppressed, the rectangularity of each colored pixel can be improved. Further, as a first color pixel (first color pattern), a red pixel is formed by a dry etching method, so that a residue is generated as when a red pixel is formed by a conventional photolithography method (exposure development). Is prevented. Furthermore, by not using the photolithographic method, it is possible to prevent the occurrence of the above-mentioned blank areas and dents. As a result, the formation limit of the pattern (each colored pixel) is improved, and the pattern is made finer and thinner. Can be planned.

  As shown in FIG. 1, the solid-state imaging element 10 includes a light receiving element (photodiode) 12 provided on a support 11, a color filter 13, a planarizing film 14, a microlens 15, and the like. Note that, in FIG. 1 (the same applies to other drawings), in order to clarify each part, the ratio of the thickness and the width is disregarded and a part is exaggerated.

  The support 11 is not particularly limited as long as it is used for a color filter. For example, soda glass, borosilicate glass, quartz glass, and the like in which a transparent conductive film is attached to these used in a liquid crystal display element or the like. In addition, a photoelectric conversion element substrate used for a solid-state imaging element or the like, for example, a silicon substrate, an oxide film, silicon nitride or the like can be given. Further, an intermediate layer or the like may be provided between the support 11 and the color filter 13 as long as the present invention is not impaired.

  On the surface layer of the support 11, the light receiving elements 12 are arranged in a two-dimensional matrix (square lattice). In addition, although not shown in the figure, a well-known read gate, vertical transfer path, horizontal transfer path, output amplifier, and the like are provided between the light receiving elements 12 on the surface layer.

  The surface of the support 11 is covered with a light-transmitting insulating film (not shown), and a transfer electrode 17 is formed on the insulating film so as to cover the read gate, the vertical transfer path, and the like. . By controlling the voltage applied to the transfer electrode 17, the charge accumulated in the light receiving element 12 is vertically transferred through the read gate through the vertical transfer path. Further, a light shielding film 18 is formed on the surface of the support 11 so as to cover the transfer electrode 17 and to open at a position immediately above the light receiving element 12. A transparent device protective film 19 is formed on the light shielding film 18 to cover the entire surface and the opening.

  The color filter 13 is formed on the protective film 19. In the following description, a colored film (so-called solid film) formed on the support 11 without dividing the region is referred to as a “colored (red, green, blue) layer”, and the region is divided into patterns. The formed colored film (for example, a film patterned in a stripe shape) is referred to as a “colored (red, green, blue) pattern”. In addition, among the colored patterns, a colored pattern (for example, a colored pattern patterned into a square) that is an element constituting the color filter 13 is referred to as a “colored (red, green, blue) pixel”.

  Here, as a form in which regions are divided into patterns (forms to be patterned), a resist pattern is formed on a colored layer in addition to a form in which a photosensitive colored film is patterned by exposure and development. A pattern in which a colored layer is patterned by etching using this resist pattern as an etching mask, a colored layer is formed so as to be embedded in a patterned recess provided on the support 11, and the colored layer is formed The form etc. which are patterned by removing the part which protruded from the recessed part are included.

  3A and 3B, (A) is a top view, (B) is a sectional view taken along line X1-X2 in (A), and (C) is a sectional view taken along line Y1-Y2 in (A). It is.

  Further, in (A) of each figure, “R” indicates any one of a red layer, a red pattern, and a red pixel, “B” indicates any one of a blue layer, a blue pattern, and a blue pixel, and “G”. Indicates either a green layer or a green pixel, and “F” indicates either a resist pattern (photoresist). “R + B” indicates that “B” is stacked on “R”, “R + B + G” indicates that “B” and “G” are stacked on “R”, and “B + G” indicates that “G” is laminated on “B”.

  The color filter 13 includes a plurality of red pixels (first color pixels) 20R, green pixels (third color pixels) 20G, and blue pixels (second color pixels) 20B that are two-dimensionally arranged. Each of the colored pixels 20R, 20G, and 20B is formed above the light receiving element 12. The green pixels 20G are formed in a checkered pattern, and the red pixels 20R and the blue pixels 20B are formed between the green pixels 20G (see FIGS. 12A and 25). In FIG. 1, in order to explain that the color filter 13 is composed of pixels of three colors, the colored pixels 20R, 20G, and 20B are displayed in a line, but in actuality, FIG. As shown in (B) and (C).

  The planarization film 14 is formed so as to cover the upper surface of the color filter 13 and has a flat upper surface. The microlens 15 is a lens provided with a convex surface upward, and is provided above the planarizing film 14 and above each light receiving element 12. Each microlens 15 efficiently guides light from the subject to each light receiving element 12.

[Color filter manufacturing process]
Next, the color filter manufacturing process 22 for forming the color filter 13 will be described with reference to FIG. The color filter manufacturing process 22 is roughly divided into a red pattern forming process (first color pattern forming process) 23, a blue layer forming process (second color coloring layer forming process) 24, and a green pixel forming process (third color pixel). Forming step) 25.

  In the red pattern forming step 23, a striped red pattern 27 is formed on the surface of the support 11. The red pattern forming step 23 includes a red layer forming step 28, a resist pattern forming step 29, a dry etching step 30, and a photoresist removing step 31.

  In the red layer forming step 28, the red layer 33R (see FIG. 3) is formed on the support 11 using a thermosetting composition (red thermosetting composition) containing at least a red pigment. In the resist pattern forming step 29, a striped resist pattern 34 (see FIG. 4) is formed on the red layer 33R using a photoresist. The resist pattern 34 has an opening 34 a (see FIG. 4) corresponding to the red pattern 27.

  In the dry etching process 30, the red pattern 33 is formed by dry etching (patterning) the red layer 33R using the resist pattern 34 as a mask. In the photoresist removing step 31, the resist pattern 34 is removed from the red pattern 27.

  In the blue layer forming step 24, a blue layer 33B (see FIG. 7) is formed using a blue thermosetting composition so as to cover the surface of the support 11 on which the red pattern 27 is formed. The blue layer 33 </ b> B is formed so as to embed regions between the patterns of the red pattern 27 (regions sandwiched between the patterns) while covering the red pattern 27.

  The green pixel forming step 25 is roughly divided into a green pixel region forming step (patterning step) 25a, a green layer forming step 37, and a planarization processing step 38. In the green pixel region forming step 25a, a green pixel forming region 39 (see FIG. 9A) for forming a green pixel (pattern) 20G is formed on the surface of the support 11, that is, the green pixel forming region 39. This is a removal step of removing the red pattern 27 and the blue layer 33B.

  The green pixel region forming process 25a includes a resist pattern forming process 40, a dry etching process 41, and a photoresist removing process 42. In the resist pattern forming step 40, a resist pattern 43 (see FIG. 9) is formed on the surface of the blue layer 33B using a photoresist. The resist pattern 43 has an opening 43a (see FIGS. 8 and 9) corresponding to the green pixel formation region 39. The region corresponding to the green pixel formation region 39 of the blue layer 33B is exposed, and the other portions Protect the area.

  In the dry etching step 41, the red pattern 27 and the blue layer 33 </ b> B are patterned by a dry etching method using the resist pattern 43 as a mask to form a green pixel forming region 39 on the support 11. The green pixel formation region 39 is formed in a checkered pattern according to the arrangement pattern of the green pixels 20G (a pattern corresponding to the arrangement pattern when the arrangement pattern of the green pixels 20G is not a checkered pattern).

  When the dry etching process 41 is performed, the red pixel 20R and the blue pixel 20B are formed on the support 11, and the blue pattern 44 (see FIG. 9) covering the surface of the red pixel 20R is formed with the blue pixel 20B. It is integrally formed. In the photoresist removal step 42, the resist pattern 43 is removed.

  In the green layer forming step 37, a green layer 33G (see FIG. 11) is formed using a green thermosetting composition so as to cover the surface of the support 11 on which the green pixel forming region 39 and the like are formed. The green layer 33G is formed so as to bury the green pixel formation region 39 while covering the blue pixel 20B and the blue pattern 44.

  In the flattening process 38, the entire exposed surface of the support 11 is flattened until the red pixel 20R is exposed. By this flattening process, the green pixel 20G is formed.

  As the planarization process, an etch-back process in which the entire exposed surface of the support 11 is dry-etched is preferable from the viewpoint of simplification of the manufacturing process and manufacturing cost. Further, instead of the etch-back process, a polishing process such as a chemical mechanical polishing (hereinafter referred to as “CMP”) process in which all exposed surfaces of the support 11 are chemically and mechanically polished may be performed. Good.

[Width and thickness of each colored pixel (pattern)]
The width of the red pixel 20R / red pattern 27 (the length of one side when the red pixel 20R is a square) is preferably 0.5 to 1.7 μm independently from the viewpoint of further improving the pattern formation limit. 0.8 to 1.5 μm is more preferable. Further, the width of the green pixel 20G (green pixel formation region 39) is preferably 0.5 to 1.7 μm and more preferably 0.6 to 1.5 μm for the same reason. Since the preferable range of the width of the blue pixel 20B is limited to the width of the red pixel 20R and the width of the green pixel 20G, it is not described here.

  The specific thickness of each colored pixel 20R, 20G, 20B is preferably 0.005 μm to 0.9 μm, more preferably 0.05 μm to 0.8 μm, and preferably 0.1 μm from the viewpoint of further improving the pattern formation limit. More preferably, -0.7 μm.

  Next, among the above steps, the resist pattern forming steps 29 and 40, the dry etching steps 30 and 41 (etch back processing in the flattening step 38), the photoresist removing steps 31 and 42, and the polishing in the flattening step 38 are performed. A preferred mode of processing will be described.

[Resist pattern formation process]
The method for forming the resist pattern 34 in the resist pattern forming step 29 is not particularly limited, and a known photolithography technique can be appropriately optimized and used. For example, a positive or negative photosensitive resin composition (photoresist) to be described later is applied on the red layer 33R and dried (preferably further pre-baked) to form a photoresist layer. The photoresist layer is then exposed to radiation and developed (preferably further post-baked) to form a resist pattern 34. As radiation used for exposure of the photoresist layer, g-line, h-line, and i-line are preferable, and i-line is particularly preferable. Further, the developer used for development is one that does not affect the colored layer containing the colorant and dissolves the uncured portion (exposed portion in the case of positive type, unexposed portion in the case of negative type). If it does not specifically limit. Specifically, a combination of various organic solvents or an alkaline aqueous solution can be used. The resist pattern 43 can be formed in the same manner.

[Photoresist]
As the photoresist, for example, a positive photosensitive resin composition is used. The positive photosensitive resin composition includes positive photosensitivity to ultraviolet rays (g rays, h rays, i rays), far ultraviolet rays including excimer lasers, electron beams, ion beams, and X rays. A positive resist composition suitable for resist can be used. Of the radiation, the exposure of the photosensitive resin layer is preferably g-line, h-line or i-line for the purpose of the present invention, and i-line is particularly preferable.

  Specifically, the positive photosensitive resin composition is preferably a composition containing a quinonediazide compound and an alkali-soluble resin. A positive-type photosensitive resin composition containing a quinonediazide compound and an alkali-soluble resin indicates that a quinonediazide group is decomposed by light irradiation with a wavelength of 500 nm or less to generate a carboxyl group, and as a result, the alkali-insoluble state becomes alkali-soluble. It is used as a positive photoresist. Since this positive photoresist has remarkably excellent resolution, it is used for manufacturing integrated circuits such as ICs and LSIs. Examples of the quinonediazide compound include a naphthoquinonediazide compound.

[Dry etching process (including etch-back process)]
The form of dry etching performed in the dry etching steps 30 and 41 and the etch back process is not particularly limited and can be performed in a known form. Representative examples of dry etching include JP-A-59-126506, JP-A-59-46628, JP-A-58-9108, JP-A-58-2809, JP-A-57-148706, JP-A-61-41102, and the like. Such a method as described in the publication is known.

[Preferred form of dry etching]
The dry etching in the present invention is preferably performed in the following form from the viewpoint of forming the pattern cross section closer to a rectangle and reducing the damage to the support 11. That is, using a mixed gas of fluorine-based gas and oxygen gas (O ₂ ), the first stage etching that performs etching to a region (depth) where the support 11 is not exposed, and after this first stage etching, A second stage etching is performed in which a mixed gas of nitrogen gas (N ₂ ) and oxygen gas (O ₂ ) is used, and etching is preferably performed up to a region (depth) where the support 11 is exposed, and the support 11 is exposed A form including over-etching performed after the etching is preferable. Hereinafter, a specific method of dry etching and the first stage etching, second stage etching, and over-etching will be described.

[Calculation of etching conditions]
Dry etching is performed by obtaining a configuration of etching conditions in advance by the following method.
(1) The etching rate (nm / min) in the first stage etching and the etching rate (nm / min) in the second stage etching are calculated respectively.
(2) The time for etching the desired thickness in the first stage etching and the time for etching the desired thickness in the second stage etching are respectively calculated.
(3) The first-stage etching is performed according to the etching time calculated in (2) above.
(4) The second stage etching is performed according to the etching time calculated in (2) above. Alternatively, the etching time may be determined by endpoint detection, and the second-stage etching may be performed according to the determined etching time.
(5) Overetching time is calculated with respect to the total time of (3) and (4) above, and overetching is performed.

[First-stage etching process]
The mixed gas used in the first stage etching process contains a fluorine-based gas and an oxygen gas (O ₂ ) from the viewpoint of processing the organic material that is the film to be etched into a rectangular shape. In addition, the first step etching process can avoid damage to the support 11 by performing etching until the region where the support 11 is not exposed.

[Second-stage etching process, over-etching process]
In the first stage etching process, etching is performed to a region where the support 11 is not exposed by a mixed gas of fluorine-based gas and oxygen gas, and then from the viewpoint of avoiding damage to the support 11, nitrogen gas and oxygen gas are mixed. Using the mixed gas, the etching process in the second stage etching process and the etching process in the overetching process are performed.

[Preferred ratio of etching amount]
The ratio between the etching amount in the first-stage etching process and the etching amount in the second-stage etching process needs to be determined so as not to impair the rectangularity due to the etching process in the first-stage etching process.

  The latter ratio in the total etching amount (the sum of the etching amount in the first stage etching step and the etching amount in the second stage etching step) is preferably in the range of more than 0% and not more than 50%. 20% is more preferable. Here, the etching amount is the thickness of the film to be etched remaining.

[Photoresist removal process]
In the photoresist removal steps 31 and 42, after the dry etching steps 30 and 41 are completed, the resist patterns 34 and 43 (photoresist layer) are removed with a dedicated stripping solution or solvent. In this embodiment, since the second stage etching process using the second mixed gas containing nitrogen gas and oxygen gas is performed, the photoresist layer can be more easily removed with a remover or a solvent. it can.

  The photoresist removing steps 31 and 42 are: (1) a first removing step of applying a stripping solution or a solvent on the resist patterns 34 and 43 to make the resist patterns 34 and 43 removable; and (2) It is preferable to include a second removal step of removing the resist patterns 34 and 43 using cleaning water.

  Examples of the first removal step include a paddle development step in which a stripping solution or a solvent is applied on at least the resist patterns 34 and 43 and is held for a predetermined time. Although there is no restriction | limiting in particular as time to make stripping solution or a solvent stagnant, It is preferable that it is several dozen seconds to several minutes.

  Examples of the second removal step include a step of removing the photoresist layer by spraying cleaning water onto the photoresist layer from a spray type or shower type spray nozzle. As the washing water, pure water can be preferably used. Further, examples of the injection nozzle include an injection nozzle in which the entire support is included in the injection range, and an injection nozzle that is a movable injection nozzle and in which the movable range includes the entire support. For example, the movable spray nozzle sprays the cleaning water while moving from the center of the support 11 to the end of the support 11 twice or more during the removal step. Thereby, the photoresist layer (resist pattern) can be effectively removed.

  The stripping solution generally contains an organic solvent, but may further contain an inorganic solvent. Examples of the organic solvent include (1) hydrocarbon compounds, (2) halogenated hydrocarbon compounds, (3) alcohol compounds, (4) ether or acetal compounds, (5) ketones or aldehyde compounds, (6) ester compounds, (7) polyhydric alcohol compounds, (8) carboxylic acids or acid anhydride compounds, (9) phenol compounds, (10) nitrogen compounds, (11) sulfur compounds, (12) Fluorine-containing compounds are exemplified.

  Further, the stripping solution used in the present invention preferably contains a nitrogen-containing compound, and more preferably contains an acyclic nitrogen-containing compound and a cyclic nitrogen-containing compound.

The acyclic nitrogen-containing compound is preferably an acyclic nitrogen-containing compound having a hydroxyl group. Examples include monoisopropanolamine, diisopropanolamine, triisopropanolamine, N-ethylethanolamine, N, N-dibutylethanolamine, N-butylethanolamine, monoethanolamine, diethanolamine, and triethanolamine; Is monoethanolamine, diethanolamine or triethanolamine, more preferably monoethanolamine (H ₂ NCH ₂ CH ₂ OH).

  Examples of the cyclic nitrogen-containing compound include isoquinoline, imidazole, N-ethylmorpholine, ε-caprolactam, quinoline, 1,3-dimethyl-2-imidazolidinone, α-picoline, β-picoline, γ-picoline, 2-pipecoline, 3-pipecoline, 4-pipecoline, piperazine, piperidine, pyrazine, pyridine, pyrrolidine, N-methyl-2-pyrrolidone, N-phenylmorpholine, 2,4-lutidine, 2,6-lutidine and the like are preferable, N-methyl-2-pyrrolidone and N-ethylmorpholine are preferable, and N-methyl-2-pyrrolidone (NMP) is more preferable.

  The stripping solution used in the present invention preferably contains an acyclic nitrogen-containing compound and a cyclic nitrogen-containing compound, and among them, the acyclic nitrogen-containing compound is selected from monoethanolamine, diethanolamine and triethanolamine. More preferably, it contains at least one selected from the group consisting of N-methyl-2-pyrrolidone and N-ethylmorpholine as the cyclic nitrogen-containing compound, and monoethanolamine and N-methyl-2-pyrrolidone. It is more preferable to include.

  Further, the content of the acyclic nitrogen-containing compound is 9 parts by mass or more and 11 parts by mass or less with respect to 100 parts by mass of the stripping solution, and the content of the cyclic nitrogen-containing compound is 65 parts by mass or more and 70 parts by mass or less. It is desirable that Further, the stripping solution used in the present invention is preferably a mixture of a non-cyclic nitrogen-containing compound and a cyclic nitrogen-containing compound diluted with pure water.

  In the photoresist removing steps 31 and 42, the resist patterns 34 and 43 only have to be removed from the colored layers (the red pattern 27, the blue pixel 20B, and the blue pattern 44). When the deposit which is is attached, this deposit may not be completely removed. Here, the deposit means an etching product deposited on the side wall of the colored layer.

  Furthermore, it is desirable to remove moisture absorbed in the colored layer after the photoresist removing steps 31 and 42 are completed. Specifically, it is desirable to perform a post-bake treatment at 90 ° C. to 200 ° C., more preferably 100 ° C. to 180 ° C. If the time is 1 minute or more and 10 minutes or less, the time efficiency of the production process is not lowered, and the conditions are sufficient to evaporate the absorbed moisture.

[Polishing (CMP) process in etch back process]
As a slurry used for polishing (CMP) treatment, it is preferable to use an aqueous solution having a pH of 9 to 11 containing 0.5 to 20% by mass of SiO ₂ abrasive grains having a particle size of 10 to 100 nm. As the polishing pad, a soft type such as continuous foaming urethane can be preferably used. Using the above slurry and polishing pad, polishing can be performed under the conditions of slurry flow rate: 50 to 250 ml / min, wafer pressure: 0.2 to 5.0 psi, retainer ring pressure: 1.0 to 2.5 psi. . In addition, after the polishing process is completed, a cleaning process for precisely cleaning the surface to be polished and a dehydration process for performing a dehydration bake (preferably at 100 to 200 ° C. for 1 to 5 minutes) (dehydration process) are performed.

[Colored thermosetting composition]
Since the color filter manufacturing process 22 uses a dry etching method, the colored pixels 20R, 20G, and 20B are formed using a non-photosensitive colored thermosetting composition that does not contain a photocurable component. Thereby, the ratio of a coloring component can be raised by removing a photocuring component from each coloring pixel 20R, 20G, 20B (each color layer 33R, 33G, 33B) and making only the thermosetting component the curing component of each layer. Therefore, the colored pixels 20R, 20G, and 20B are made thinner and good spectral characteristics can be obtained.

  The colored thermosetting composition contains a colorant and a thermosetting compound, and the colorant concentration in the total solid content is preferably 50% by mass or more and less than 100% by mass. By increasing the colorant concentration, a thinner color filter 13 can be formed.

[Colorant]
The colorant used in the present invention is not particularly limited, and various conventionally known dyes and pigments can be used alone or in combination.

  Examples of the pigment include conventionally known various inorganic pigments or organic pigments. Further, considering that it is preferable to have a high transmittance, whether it is an inorganic pigment or an organic pigment, it is preferable to use a pigment having an average particle size as small as possible, and considering the handling properties, the average particle size of the pigment is 0.01 μm to 0.1 μm is preferable, and 0.01 μm to 0.05 μm is more preferable.

  The following can be mentioned as such a pigment. However, the present invention is not limited to these.

C. I. Pigment yellow 11,24,108,109,110,138,139,150,151,154,167,180,185;
C. I. Pigment orange 36, 71;
C. I. Pigment red 122,150,171,175,177,209,224,242,254,255,264;
C. I. Pigment violet 19, 23, 32;
C. I. Pigment blue 15: 1, 15: 3, 15: 6, 16, 22, 60, 66;
C. I. Pigment Black 1

[First color layer (red layer)]
The colored layer of the first color is the red layer 33R and contains a red pigment. I. Pigment red 122, 150, 171, 175, 177, 209, 224, 242, 254, 255, 264; Furthermore, from the viewpoint of red separability, it is desirable to further contain yellowish pigment. Examples of yellow dye include C.I. I. Pigment yellow 11,24,108,109,110,138,139,150,151,154,167,180,185. Furthermore, C.I. I. It may also contain oranges such as CI Pigment Orange 36, 71;

  In the present invention, when the colorant is a dye, the dye can be uniformly dissolved in the composition to obtain a non-photosensitive colored thermosetting resin composition. There is no restriction | limiting in particular as such a dye, A conventionally well-known dye can be used for color filters.

  The chemical structure includes pyrazole azo, anilino azo, triphenyl methane, anthraquinone, anthrapyridone, benzylidene, oxonol, pyrazolotriazole azo, pyridone azo, cyanine, phenothiazine, pyrrolopyrazole azomethine, Xanthene-based, phthalocyanine-based, benzopyran-based and indigo-based dyes can be used.

  The colorant content in the total solid content of the colored thermosetting composition is not particularly limited, but is preferably 30 to 60% by mass. By setting the content to 30% by mass or more, an appropriate chromaticity as a color filter can be obtained. Moreover, hardening can fully be advanced by setting it as 60 mass% or less, and the strength reduction as a film | membrane can be suppressed.

[Thermosetting compound]
The thermosetting compound is not particularly limited as long as the film can be cured by heating. For example, a compound having a thermosetting functional group can be used. As such a thermosetting compound, for example, a compound having at least one group selected from an epoxy group, a methylol group, an alkoxymethyl group, and an acyloxymethyl group is preferable.

  More preferable thermosetting compounds include (a) an epoxy compound, (b) a melamine compound, a guanamine compound, and a glycoluril substituted with at least one substituent selected from a methylol group, an alkoxymethyl group, and an acyloxymethyl group. Examples thereof include a compound or a urea compound, (c) a phenol compound, a naphthol compound, or a hydroxyanthracene compound substituted with at least one substituent selected from a methylol group, an alkoxymethyl group, and an acyloxymethyl group. Of these, polyfunctional epoxy compounds are particularly preferred.

  Although the total content of the thermosetting compound in the colored thermosetting composition varies depending on the material, it is preferably 0.1 to 50% by mass with respect to the total solid content (mass) of the colored thermosetting composition. 0.2-40 mass% is more preferable, and 1-35 mass% is especially preferable.

[Various additives]
In addition, the colored thermosetting composition has various additives as necessary, for example, a binder, a curing agent, a curing catalyst, a solvent, a filler, a polymer compound other than the above, as long as the effects of the present invention are not impaired. Surfactants, adhesion promoters, antioxidants, ultraviolet absorbers, aggregation inhibitors, dispersants and the like can be blended.

[binder]
The binder is often added at the time of preparing the pigment dispersion, does not require alkali solubility, and may be soluble in an organic solvent.

  The binder is preferably a linear organic polymer that is soluble in an organic solvent. Examples of such linear organic high molecular polymers include polymers having a carboxylic acid in the side chain, such as JP-A-59-44615, JP-B-54-34327, JP-B-58-12577, and JP-B-54-. No. 25957, JP-A-59-53836, JP-A-59-71048, methacrylic acid copolymer, acrylic acid copolymer, itaconic acid copolymer, crotonic acid copolymer, etc. Examples thereof include polymers, maleic acid copolymers, partially esterified maleic acid copolymers, and acidic cellulose derivatives having a carboxylic acid in the side chain are also useful.

  Among these various binders, from the viewpoint of heat resistance, polyhydroxystyrene resins, polysiloxane resins, acrylic resins, acrylamide resins, and acrylic / acrylamide copolymer resins are preferable. Acrylic resins, acrylamide resins, and acrylic / acrylamide copolymer resins are preferred.

  Examples of the acrylic resin include copolymers composed of monomers selected from benzyl (meth) acrylate, (meth) acrylic acid, hydroxyethyl (meth) acrylate, (meth) acrylamide, and the like, such as benzyl methacrylate / methacrylic acid, Each copolymer such as benzyl methacrylate / benzylmethacrylamide, KS resist-106 (manufactured by Osaka Organic Chemical Industry Co., Ltd.), cyclomer P series (manufactured by Daicel Chemical Industries, Ltd.) and the like are preferable.

  By dispersing the aforementioned colorant in these binders at a high concentration, it is possible to impart adhesion to the lower layer, etc., which also contributes to the coating surface state during spin coating and slit coating (colored layer formation). Yes.

[Curing agent]
When an epoxy resin is used as the thermosetting compound, it is preferable to add a curing agent. There are many types of curing agents for epoxy resins, and their properties, pot life with resin and curing agent mixture, viscosity, curing temperature, curing time, heat generation, etc. vary greatly depending on the type of curing agent used. An appropriate curing agent must be selected according to the purpose of use, use conditions, working conditions, and the like. The curing agent is explained in detail in Chapter 5 of Hiroshi Kakiuchi “Epoxy resin (Shojodo)”. Examples of curing agents are as follows.

  Those that act catalytically include tertiary amines, boron trifluoride-amine complexes, those that react stoichiometrically with functional groups of epoxy resins, polyamines, acid anhydrides, etc .; Examples include diethylenetriamine, polyamide resin, and medium temperature curing examples such as diethylaminopropylamine and tris (dimethylaminomethyl) phenol; examples of high temperature curing include phthalic anhydride and metaphenylenediamine. In terms of chemical structure, in the case of amines, diethylenetriamine as an aliphatic polyamine; metaphenylenediamine as an aromatic polyamine; tris (dimethylaminomethyl) phenol as a tertiary amine; phthalic anhydride as an acid anhydride; polyamide resin Polysulfide resin, boron trifluoride-monoethylamine complex; Synthetic resin initial condensate includes phenol resin, dicyandiamide and the like.

  These curing agents react with an epoxy group by heating and polymerize to increase the crosslinking density and cure. For thinning, both the binder and the curing agent are preferably as small as possible. In particular, the curing agent is 35% by mass or less, preferably 30% by mass or less, more preferably 25% by mass or less with respect to the thermosetting compound. It is preferable that

[Curing catalyst]
In order to realize a high colorant concentration in the present invention, curing by reaction between epoxy groups is effective in addition to curing by reaction with the curing agent. For this reason, a curing catalyst can be used without using a curing agent. The addition amount of the curing catalyst is about 1/10 to 1/1000, preferably about 1/20 to 1/500, more preferably about 1/30 to the epoxy resin having an epoxy equivalent weight of about 150 to 200. It is possible to cure with a slight amount of about 1/250.

[solvent]
The colored thermosetting composition is used as a solution dissolved in various solvents. The solvent is not particularly limited as long as the solubility of each component and the coating property of the colored thermosetting composition are satisfied.

[Dispersant]
Moreover, the said dispersing agent is added in order to improve the dispersibility of a pigment. As the dispersant, known ones can be appropriately selected and used, and examples thereof include a cationic surfactant, a fluorosurfactant, and a polymer dispersant.

  As these dispersants, many types of compounds are used. For example, phthalocyanine derivatives (commercially available products EFKA-745 (manufactured by Efka)), Solsperse 5000 (manufactured by Nippon Lubrizol); organosiloxane polymer KP341 (Shin-Etsu) (Made by Chemical Industry Co., Ltd.), (meth) acrylic acid type (co) polymer polyflow No.75, No.90, No.95 (made by Kyoeisha Yushi Chemical Co., Ltd.), W001 (made by Yusho Co., Ltd.) ) And other cationic surfactants; polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate , Sol Nonionic surfactants such as tan fatty acid esters; Anionic surfactants such as W004, W005, W017 (manufactured by Yusho Co., Ltd.); EFKA-46, EFKA-47, EFKA-47EA, EFKA polymer 100, EFKA polymer 400, EFKA polymer 401, EFKA polymer 450 (manufactured by Morishita Sangyo Co., Ltd.), disperse aid 6, disperse aid 8, disperse aid 15, disperse aid 9100 (manufactured by San Nopco) Agents: Solsperse 3000, 5000, 9000, 12000, 13240, 13940, 17000, 24000, 26000, 28000 and other Solsperse dispersants (manufactured by Nippon Lubrizol); Adeka Pluronic L31, F38, L42, L44, L61, L64 F68, L72, P95, F77, P84, F87, P94, L101, P103, F108, L121, P-123 (manufactured by Asahi Denka Co.) and Isonetto S-20 (manufactured by Sanyo Chemical Co.) and the like

  The said dispersing agent may be used independently and may be used in combination of 2 or more type. Usually, the amount of the dispersant added to the colored thermosetting composition is preferably about 0.1 to 50 parts by mass with respect to 100 parts by mass of the pigment.

[Other additives]
Moreover, various additives can be further added to the colored curable composition as necessary.

  Next, each process which comprises the color filter manufacturing process 22 is demonstrated in detail using FIGS. However, the present invention is not limited to the following description. In order to prevent complication of the drawing, the case where the color filter 13 of 3 × 3 = 9 pixels is manufactured will be described here, but it can be manufactured in the same manner when the number of pixels is increased.

  As shown in FIGS. 3A and 3B, in the red layer forming step 28, a red thermosetting composition containing a red pigment and yellow dye is applied onto the support 11 using a known spin coater. Next, the support 11 is baked (post-baked) by a known heating device such as a hot plate or an oven. Thereby, the coating film of a red thermosetting composition is thermoset, and the red layer 33R is formed on the support 11 with a predetermined film thickness.

  As shown in FIGS. 4A and 4B, in the resist pattern forming step 29, a photoresist is applied onto the red layer 33R using a spin coater, and then the support 11 is pre-baked by a heating device. Thereby, the photoresist is cured, and a photoresist layer is formed on the red layer 33R.

  Next, using a well-known exposure apparatus (i-line stepper), the photoresist layer is irradiated with exposure light, and this photoresist layer is exposed. For example, when a positive type photoresist is used, the exposure light beam is irradiated to a region other than the region where the red pattern 27 is formed. After this exposure process, the exposed photoresist layer is developed using a known developer. Further, after the development processing, post-baking processing is performed by a heating device. Thus, a resist pattern 34 having an opening 34a corresponding to the red pattern 27 is formed on the red layer 33R.

  As shown in FIGS. 5A and 5B, in the dry etching step 30, the red layer 33R is dry etched using a known dry etching apparatus with the resist pattern 34 as a mask. This dry etching is performed in the three stages of the first stage etching, the second stage etching, and the overetching. Thereby, the red layer 33 </ b> R exposed from the opening 34 a of the resist pattern 34 is removed, and a striped red pattern 27 is formed on the support 11.

  As shown in FIGS. 6A and 6B, in the photoresist removal step 31, a first removal step of applying a stripping solution or a solvent onto the resist pattern 34 and the resist pattern 34 are removed using cleaning water. A 2nd removal process is performed. Thereby, the resist pattern 34 is removed from the red pattern 27.

  As shown in FIGS. 7A and 7B, in the blue layer forming step 24, the same process as in the red layer forming step 28 is performed to cover the red pattern 27 on the support 11. A blue layer 33B is formed so as to embed a region between the patterns.

  As shown in FIGS. 8A to 8C, in the resist pattern forming step 40 of the green pixel region forming step 25a, the same process as in the resist pattern forming step 29 is performed, and the green color is formed on the blue layer 33B. A resist pattern 43 having an opening 43a corresponding to the pixel formation region 39 is formed.

  As shown in FIGS. 9A to 9C, in the dry etching step 41, the red pattern 27 and the blue layer 33B are dry-etched using the resist pattern 43 as a mask by the same method as the dry etching step 30 described above. . As a result, the blue layer 33 </ b> B exposed from the opening 43 a of the resist pattern 43 and the red pattern 27 under the blue layer 33 </ b> B are removed, and the green pixel formation region 39 is formed on the support 11 in a checkered pattern. At the same time, the red pixel 20R and the blue pixel 20B are formed on the support 11, and the blue pattern 44 is formed on the red pixel 20R.

  As shown in FIGS. 10A to 10C, in the photoresist removal process 42, the first removal process and the second removal process are performed in the same manner as the photoresist removal process 42 described above, and the blue pixels 20 </ b> B and The resist pattern 43 is removed from the blue pattern 44.

  As shown in FIGS. 11A to 11C, in the green layer forming step 37, the blue pixel 20B and the blue pattern 44 are formed on the support 11 by performing the same process as in the red layer forming step 28 described above. A green layer 33G is formed so as to embed the green pixel formation region 39 while covering.

  As shown in FIGS. 12A to 12C, in the flattening process step 38, an etch-back process or a polishing process (flattening) is performed on the entire exposed surface of the support 11 using a dry etching apparatus or a polishing (CMP) apparatus. Process). Specifically, each surface of the blue pixel 20B, the blue pattern 44, and the green pixel 20G is etched back or polished until the red pixel 20R is exposed. Thereby, the surface of each coloring pixel 20R, 20G, 20B becomes flush.

  Further, first, the surface of the green layer 33G is etched back until the green layer 33G on the blue pixel 20B and the blue pattern 44 is removed. As a result, the green pixel 20G is formed on the green pixel formation region 39. Subsequently, each surface of the blue pixel 20B, the blue pattern 44, and the green pixel 20G may be polished until the red pixel 20R is exposed.

  Thus, all the steps of the color filter manufacturing process 22 are completed, and the color filter 13 in which the colored pixels 20R, 20G, and 20B are two-dimensionally arranged on the support 11 is formed.

  Next, the color filter 47 of the solid-state image sensor 46 according to the second embodiment of the present invention will be described with reference to FIG. The color filter 47 basically has the same configuration as that of the solid-state imaging device 10 of the first embodiment. However, on the red pixel 20R of the color filter 47, an etching stopper layer (hereinafter simply referred to as a stopper layer) 48 used for detecting the end point of the flattening process (etch back process or polishing process) is formed. In addition, about the same thing as a color filter 13 (solid-state imaging device 10) on a function and a structure, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

  The stopper layer 48 is preferably a layer that has an etching rate in the etch-back process or a polishing rate in a polishing process such as CMP lower than the color layers 33R and 33G. Furthermore, the stopper layer 48 is formed of a curable composition that is transparent to visible light. This eliminates the need to completely remove the stopper layer 48 from the red pixel 20R of the color filter 47. Here, being transparent to visible light means that the transmittance of visible light is 95% or more.

  When the etching rate and polishing rate of the stopper layer 48 are equal to or higher than those of the color layers 33B and 33G, the stopper layer 48 does not need to be left and may be removed during the etch-back process or the polishing process.

  As shown in FIG. 14, the color filter manufacturing process 50 for manufacturing the color filter 47 is the same as the color filter manufacturing process 22 of the first embodiment except that the red pattern forming process 51 is different. The red pattern forming step 51 is different from the first embodiment in that a stopper layer forming step 52 is provided between the red layer forming step 28 and the resist pattern forming step 29.

  The stopper layer forming step 52 uses a curable composition that is a material of the stopper layer 48 on the red layer 33R formed in the red layer forming step 28 to distinguish the stopper layer (the stopper layer 48 from the following). An entire surface stopper layer 53 (see FIG. 15) 53 is formed. In the resist pattern forming step 29, the above-described resist pattern 34 is formed on the entire surface stopper layer 53. In the dry etching step 30, the entire surface stopper layer 53 and the red layer 33R are dry-etched using the resist pattern 34 as a mask to form a striped stopper pattern layer 53a (see FIG. 17) and a red pattern 27. In the photoresist removing step 31, the resist pattern 34 is removed from the stopper pattern layer 53a.

  The blue layer forming step 24 and the green pixel forming step 25 are basically the same as those in the first embodiment, but in the dry etching step 41 of the green pixel forming step 25, the stopper pattern layer 53a is dry-etched to obtain a red color. A stopper layer 48 is formed on the surface of the pixel 20R.

  In the flattening process of the green pixel forming process 25, the entire exposed surface of the support 11 is flattened until the stopper layer 48 is exposed. Whether or not the stopper layer 48 is exposed (end point of the planarization process) can be confirmed by the following method.

  When the etch back process is performed, for example, the end point of the planarization process can be confirmed based on the presence or absence of plasma emission of the reaction product generated by dry etching (plasma etching) of the stopper layer 48. Further, when the polishing process is performed, for example, the surface to be polished is irradiated with the inspection light and the reflected light is measured, and based on whether or not the light having a specific frequency is absorbed by the stopper layer 48. The end point of the flattening process can be confirmed.

  Since the surface of the red pixel 20R is protected by the stopper layer 48 during the flattening process, the red pixel 20R is more effectively prevented from being damaged or damaged by the etch-back process or the polishing process. can do. Thereby, control of the transmission spectral characteristic of the red pixel 20R of the color filter 47 is further facilitated.

[Curable composition]
As the curable composition for forming the stopper layer 48, a composition containing a polymer compound that can be cured by heat can be preferably used. As the polymer compound, for example, a polysiloxane polymer and a polystyrene polymer are preferable. Among these, a material known as a spin-on-glass (SOG) material, or a thermosetting composition mainly composed of a polystyrene derivative or a polyhydroxystyrene derivative is more preferable.

  As an index indicating the etching resistance of the curable composition, for example, Onishi parameters (reference documents JP-A Nos. 2004-294638 and 2005-146182) can be used. In the present invention, when the parameter value of the colored curable composition is 3.5 to 4.5, the parameter value of the curable composition forming the stopper layer 48 is 2.5 or less. Therefore, it can be determined that the selectivity to the colored curable composition layer can be ensured (the stopper layer 48 is difficult to be etched). The Onishi parameter can be calculated by the following formula (I).

  (C + O + H) / (C−O) Formula (I)

  C, O, and H in the formula (I) each represent the number of moles of carbon atom, oxygen atom, and hydrogen atom in the structural repeating unit of the polymer. An example of calculating Onishi parameters is shown below. It should be noted that the calculation was performed by rounding off the three decimal places.

Example 1. Fluorene acrylate compound (C + O + H) / (CO) = (33 + 6 + 25) / (33-6) = 2.37
Example 2. Polyhydrostyrene derivative (C + O + H) / (C−O) = (8 + 1 + 8) / (8-1) = 2.42

  Next, each step of the color filter manufacturing process 50 will be described in detail with reference to FIGS. In (A) of each figure, “RS” indicates that the stopper layers 48, 53, and 53a are stacked on the red layer 33R, the red pattern 27, and the red pixel 20R.

[Blue pattern forming process]
As shown in FIGS. 15A and 15B, after the red layer 33R is formed on the support 11 in the red layer forming step 28, in the stopper layer forming step 52, a curable composition is formed using a spin coater. After coating on the red layer 33R, the entire surface stopper layer 53 is formed on the red layer 33R by baking with a heating device.

  The following steps are basically the same as those in the first embodiment. As shown in FIGS. 16A and 16B, a resist pattern 34 is formed on the entire stopper layer 53 in the resist pattern forming step 29. Is done. Next, as shown in FIGS. 17A and 17B, after the red pattern 27 and the stopper pattern layer 53a are formed in the dry etching step 30, as shown in FIGS. In the photoresist removing step 31, the resist pattern 34 is removed.

[Red layer forming step]
As shown in FIGS. 19A and 19B, in the blue layer forming step 24, the blue layer 33B is supported by the support 11 so as to cover the stopper pattern layer 53a and embed regions between the red patterns 27. Formed on top.

[Green pixel forming process]
As shown in FIGS. 20A to 20C, in the resist pattern forming step 40, a resist pattern 43 is formed on the blue layer 33B. Next, as shown in FIGS. 21A to 21C, after the red pixel 20R, the blue pixel 20B, the blue pattern 44, the green pixel formation region 39, and the stopper layer 48 are formed in the dry etching step 41, As shown in FIGS. 22A to 22C, in the photoresist removing step 42, the resist pattern 43 is removed.

  As shown in FIGS. 23A to 23C, in the green layer forming step 37, the green layer 33G is placed on the support 11 so as to embed the green pixel forming region 39 while covering the blue pixel 20B and the blue pattern 44. Formed. Then, as shown in FIGS. 24A to 24C, in the planarization process step 38, an etch-back process or a polishing process is performed on the entire exposed surface of the support 11 using a dry etching apparatus or a polishing apparatus.

  When the stopper layer 48 is exposed by the etch-back process, the plasma emission of the reaction product generated by etching the stopper layer 48 is confirmed. Further, when the stopper layer 48 is exposed by the polishing process, absorption of light of a specific frequency by the stopper layer 48 is confirmed. When these confirmations are made, the flattening process is terminated. Thereby, the surfaces of the stopper layer 48, the blue pixel 20B, and the green pixel 20G on the red pixel 20R are flush with each other.

  Thus, all the steps of the color filter manufacturing process 50 are completed, and the color filter 47 in which the colored pixels 20R, 20G, and 20B are two-dimensionally arranged on the support 11 is formed.

  As described above, in the present invention, the step of forming the striped red pattern 27 on the support 11, the step of forming the blue layer 33 </ b> B of the second color on the support 11, and the green pixel on the support 11. Since the color filters 13 and 47 are manufactured through the step of forming the formation region 39 and the step of forming the green pixel 20G of the third color in the green pixel formation region 39, the isolated pattern (each colored pixel) It is possible to reduce the step of directly forming the film. As a result, at the time of forming each pixel, the rounding of corners of the isolated pattern is suppressed, and the rounding of corners of the cross-sectional shape that occurs when the isolated pattern is processed by dry etching is reduced. Can be improved.

  In particular, when a striped resist pattern 34 is formed by a photolithography method as a mask for dry etching, a resist pattern image formed on the photoresist layer at the time of exposure is compared with the case of forming an isolated pattern. Edge contrast increases. Furthermore, the stripe pattern has a constant contrast in the longitudinal direction. As a result, the edge shape of the resist pattern 34 is prevented from being rounded, so that the roundness of the corners of the red pattern 27 and the red pixel 20R can be suppressed and the rectangularity of the cross section can be improved.

  In addition, the step of forming the third color green pixel 20G is not a photolithography method using a colored photosensitive composition in which the rectangularity of the pattern is inferior to the photoresist, but a photoresist and a dry etching method that are excellent in the rectangularity of the pattern, and Since the CMP method is used, the rectangularity of each colored pixel can be further improved.

  Further, since the red pixel 20R is formed by the dry etching method as the first color pixel (colored pattern, colored layer), the red pixel 20R is formed by the conventional photolithography method (exposure development). It is possible to prevent residues from being generated. Also, since red pigments have lower color values than green and blue pigments, when red, green, and blue pixels are formed with the same film thickness, red pixels need to have the largest pigment content. is there. Therefore, it may be paraphrased that the film thickness of the color filter is determined by the film thickness of the red pixel. By forming the red pixel by dry etching, it is possible to apply a process of forming another color pixel having a margin in the photolitho component content rate than the red pixel by the photolithography method. Thus, by forming the red pixel 20R by a dry etching method (colored thermosetting composition), it is possible to reduce the thickness of the red pixel 20R, and it is possible to reduce the thickness of the color filter.

  In addition, since an isolated pattern is not processed in the present invention, generation of a blank area (see FIG. 25A) in an area where the corners of the colored pixels 20R, 20G, and 20B are gathered, and the colored pixels 20R, 20G, and 20B Generation of a dent (see FIG. 25B) in the vicinity of the boundary can be prevented. The pattern that forms the green region (here, checkered pattern) is formed by dry etching using a photoresist, and is formed through a process of removing unnecessary portions after embedding, thus forming an isolated pattern. The roundness of the corners of each pattern is smaller than in the case of doing so. Thereby, the formation limit of the pattern (each colored pixel) can be improved, and the pattern can be made finer and thinner.

  Further, the solid-state imaging devices 10 and 46 according to the present invention include the color filters 13 and 47 manufactured in the respective steps, respectively, so that the color reproducibility is improved. The color filters 13 and 47 are particularly suitable for a high-resolution solid-state imaging device that exceeds 1 million pixels.

  In the above embodiment, the blue layer 33B is formed as the second color layer and the green layer 33G is formed as the third color layer. However, the present invention is not limited to this, and the order is The reverse may be possible. The present invention can also be applied when the color filter is composed of four or more colored pixels.

  In the above embodiment, the case where either the etch back process or the polishing process is performed in the flattening process 38 of the green pixel forming process 25 has been described, but both may be performed together. Further, various planarization processes other than the etch back process and the polishing process may be performed.

  Furthermore, in the above embodiment, the case where the blue pattern 44 on the red pixel 20R is simultaneously removed in the green pixel forming step 25 (flattening step 38) has been described, but the present invention is not limited to this. Alternatively, the blue pattern 44 may be removed after the green pixel forming step 25 is completed. Further, after the green layer 33G is formed, a resist pattern that exposes a region other than the green pixel formation region 39 is formed on the green layer 33G, and the green layer 33 is dry-etched using this resist pattern as a mask. The green pixel 20G may be formed. At this time, it is preferable to remove the blue pattern 44 on the red pixel 20R by performing over-etching. In this case, unevenness occurs on the surface of each colored pixel. However, the unevenness can be flattened by performing a flattening process.

  In the above embodiment, the case where the green pixels 20R are arranged in a checkered pattern has been described as an example. However, the green pixels 20G are arranged in a stripe pattern in a direction parallel to the red pattern 27. Alternatively, the present invention can also be applied to an arrangement different from the above-described embodiment, such as an arrangement aligned in a direction inclined with respect to the red pattern 27. Further, the method of forming each of the colored pixels 20R, 20G, and 20B is not limited to the method described in the above embodiments, and may be formed by appropriately combining a dry etching method and a planarization method. That is, when forming a color filter having each of the colored pixels 20R, 20G, and 20B, any one of the dry etching method and the planarization method may be applied to the formation of which color pixel, and a plurality of methods are combined. May be applied.

  In the above embodiment, the manufacturing method of the color filters 13 and 47 used in the solid-state imaging devices 10 and 46 has been described. However, the present invention is not limited to this, and the color filter used in a liquid crystal display or the like is not limited thereto. The present invention can also be applied to manufacturing.

  EXAMPLES Hereinafter, Examples 1 to 3 for demonstrating the effect of the present invention will be shown and the present invention will be specifically described. However, the present invention is not limited to the following examples unless it exceeds the gist thereof. . Unless otherwise specified, “part” is based on mass. In the following steps, when processing using a commercially available processing solution was performed, processing was performed according to the method specified by the manufacturer of each processing solution unless otherwise specified.

  As Example 1, the color filter 13 of the first embodiment formed by performing the etch back process in the planarization process 38 was prepared. As Example 2, the color filter 47 of the second embodiment formed by performing the etch-back process as in Example 1 was prepared. As Example 3, a color filter 13 formed by performing a CMP (polishing) process instead of the etch-back process of Example 1 was prepared.

  As materials of Examples 1 to 3, the following red thermosetting composition, blue thermosetting composition, and green thermosetting composition were prepared.

[Red thermosetting composition]
First, the following red pigment dispersion was prepared.
Pigment Red 254 80 parts by mass Pigment Yellow 139 20 parts by mass Dispersant EDAPLAN 472 (manufactured by Enomoto Kasei Co., Ltd.) 30 parts by mass 10 parts by mass of benzyl methacrylate / glycidyl methacrylate copolymer PGMEA 700 parts by mass Each material was stirred with a homogenizer, and then finely dispersed with a disperser using 0.3 mm zirconia beads (Dispermat, manufactured by GETZMANN) for 5 hours to prepare a red pigment dispersion.

Next, a non-photosensitive coloring composition, that is, a red thermosetting composition was prepared by further adding a thermosetting resin to the red pigment dispersion.
EHPE-3150 0.8 part by mass (based on the blue pigment dispersion)
Furthermore, PGMEA was added to the red pigment dispersion and the thermosetting resin, and the solid content of the composition was diluted to 15.0%.

[Blue thermosetting composition]
First, the blue pigment dispersion shown below was prepared.
Pigment Blue 15: 6 125 parts by mass Pigment Violet 25 parts by mass Dispersant PLADED211 (manufactured by Enomoto Kasei Co., Ltd.) 40 parts by mass 15 parts by mass of benzyl methacrylate / glycidyl methacrylate copolymer A blue pigment dispersion was prepared by performing the same treatment as that for preparing the red pigment dispersion.

Next, a non-photosensitive coloring composition, that is, a blue thermosetting composition was prepared by further adding a thermosetting resin to the blue pigment dispersion.
EHPE-3150 0.5 part by mass (based on the red pigment dispersion)
Furthermore, PGMEA was added to the blue pigment dispersion and the thermosetting resin, and the solid content of the composition was diluted to 13.0%.

[Green thermosetting composition]
First, the following green pigment dispersion was prepared.
Pigment Green 36 90 parts by weight Pigment Green 7 25 parts by weight Pigment Yellow 139 40 parts by weight Dispersant PALDDED151 (manufactured by Enomoto Kasei Co., Ltd.) 20 parts by weight Benzyl methacrylate / glycidyl methacrylate copolymer 10 parts by weight -PGMEA 630 parts by mass or less, a green pigment dispersion was prepared by performing the same treatment as that for preparing the red pigment dispersion.

Next, a non-photosensitive coloring composition, that is, a green thermosetting composition was prepared by further adding a thermosetting resin to the green pigment dispersion.
EHPE-3150 0.8 part by mass (based on the green pigment dispersion)
Furthermore, PGMEA was added to the green pigment dispersion and the thermosetting resin, and the solid content of the composition was diluted to 13.0%.

[Example 1]
Example 1 was formed on the following conditions using the said thermosetting composition of each color.

<Red pattern formation process>
After applying the red coloring composition on the support 11 with a spin coater so as to form a coating film having a film thickness of 0.525 μm, the coating is heated at 220 ° C. for 5 minutes using a hot plate. Curing was performed to form a red layer 33R. The film thickness of this red layer 33R was 0.525 μm.

  Next, a positive photoresist “FHi622BC” (manufactured by Fujifilm Electronics Materials) was applied and pre-baked to form a 0.8 μm-thick photoresist layer.

Subsequently, the photoresist layer was subjected to pattern exposure using an i-line stepper (manufactured by Canon Inc.) at an exposure amount of 350 mJ / cm ² , and the temperature of the photoresist layer or the ambient temperature was 90 ° C. for 1 minute. The heat treatment was performed. Thereafter, development processing was performed with a developer “FHD-5” (manufactured by FUJIFILM Electronics Materials) for 1 minute, and further post-baking processing was performed at 110 ° C. for 1 minute to form a resist pattern 34. The LINE & SPACE size of the resist pattern 34 was formed with LINE: 1.25 μm and SPACE: 1.15 μm in consideration of etching conversion difference (pattern width reduction by etching).

  Next, dry etching of the red layer 33R was performed in the following procedure using the resist pattern 34 as an etching mask.

RF power: 800 W, antenna bias: 400 W, wafer bias: 200 W, chamber internal pressure: 4.0 Pa, substrate temperature: 50 ° C., mixed gas in dry etching apparatus (H-621, manufactured by Hitachi High-Technologies Corporation) The gas type and flow rate were set to CF ₄ : 80 mL / min. , O ₂ : 40 mL / min. , Ar: 800 mL / min. As a result, the first-stage etching process for 66 seconds was performed.

  The amount of scraping of the red layer 33R under this etching condition was 465 nm (88% etching amount), and there was a remaining film of about 60 nm.

Next, in the same etching chamber, RF power: 600 W, antenna bias: 100 W, wafer bias: 250 W, chamber internal pressure: 2.0 Pa, substrate temperature: 50 ° C., gas mixture type and flow rate of N ₂ : 500 mL / min. , O ₂ : 50 mL / min. , Ar: 500 mL / min. (N ₂ / O ₂ / Ar = 10/1/10), the second etching process and the over-etching process were performed with the over-etching rate in the total etching being 20%.

  The etching rate of the red layer 33R under the second-stage etching conditions was 600 nm / min or more, and it took about 10 seconds to etch the remaining film of the red layer 33R. Etching time was calculated by adding 66 seconds of the first stage etching time and 10 seconds of the second stage etching time. As a result, the etching time was 66 + 10 = 76 seconds, the over-etching time was 76 × 0.2 = 15 seconds, and the total etching time was set to 76 + 15 = 91 seconds.

  After performing dry etching under the above conditions, the resist pattern 34 is removed by performing a stripping process for 120 seconds using a photoresist stripping solution “MS230C” (manufactured by FUJIFILM Electronics Materials), and further using pure water. Washing and spin drying were performed. Thereafter, a dehydration baking process was performed at 100 ° C. for 2 minutes. Thus, a red pattern 27 was obtained. The size of LINE & SPACE of this red pattern 27 was LINE 1.2 μm and SPACE 1.2 μm.

<Blue layer formation process>
Next, a 0.50 μm-thick coating film made of a blue thermosetting composition is formed by the same method as that for forming the red layer 33R so as to cover the surface of the support 11 on which the red pattern 27 is formed. Heat treatment was performed to form a blue layer 33B. The film thickness of the blue layer 33B (excluding the portion laminated on the red pattern 27) was 0.55 μm.

<Green Pixel Formation Step (Green Pixel Region Formation Step)>
Subsequently, a photoresist layer having a thickness of 1.0 μm was formed on the blue layer 33B under the same conditions as those for forming the resist pattern 34 described above, and then a resist pattern 43 was formed. The openings 43a of the resist pattern 43 are arranged in a checkered pattern and are each formed into a 1.2 μm square.

  Next, dry etching of the red pattern 27 and the blue layer 33B was performed using the resist pattern 43 as an etching mask. Of the dry etching conditions in the red pattern forming step 23, the first stage etching time is changed to 70 seconds, the second stage etching time is changed to 20 seconds, and the overetching time is changed to 18 seconds. Was subjected to dry etching under the condition of 108 seconds, and the red pattern 27 and the blue layer 33B on the green pixel region formation 39 were removed. As a result, a red pixel 20R, a blue pixel 20B (blue pattern 44), and a green pixel region formation 39 were obtained.

  Next, similarly to the removal of the resist pattern 34, the resist pattern 43 was removed, washed with pure water, spin-dried, and dehydrated and baked.

<Green pixel forming step (green layer forming step, flattening step)>
Next, a 0.625 μm thick coating film made of a green thermosetting composition is formed by the same method as the formation of the red layer 33R so as to cover the surface of the support 11 on which the green pixel region formation 39 and the like are formed. Formation and heat treatment were performed to obtain a green layer 33G. The film thickness of the green layer 33G (excluding the portion laminated on the blue pattern 44 and the blue pixel 20B) was 0.625 μm.

And the etch-back process (flattening process) of the following conditions was performed. That is, RF power: 600 W, antenna bias: 100 W, wafer bias: 250 W, chamber internal pressure: 2.0 Pa, substrate temperature: 50 ° C., mixed by dry etching apparatus (U-621, manufactured by Hitachi High-Technologies Corporation) The gas type and flow rate of the gas were set to N ₂ : 500 mL / min. , Ar: 500 mL / min. (N ₂ / Ar = 1/1) was performed until the red pixel 20R was exposed.

  At this time, the etching rates of the green layer 33G and the blue pattern 44 are both 150 nm / min, and it takes 40 seconds (time for removing both the green layer 33G and the blue pattern 44) to expose the red pixel 20R. It was a calculation that required. Etching time was obtained by adding 4 seconds of overetching to this. As a result, the etching time was 40 seconds, the over-etching time was 4 seconds, and the total etching time was set to 40 + 4 = 44 seconds.

  As described above, the green pixel 20G is formed on the green pixel region formation 39. Further, the blue pattern 44 on the red pixel 20R was removed by the same etch-back process. The green pixels 20G were arranged in a checkered pattern so as to be embedded in the green pixel region formation 39, and each was formed into a square of 1.2 μm square.

  The color filter surface was formed in a flat state within Δ0.1 μm (the difference between the maximum film thickness value and the minimum film thickness value was within 0.1 μm). That is, the red pixel 20B: 0.51 μm, the blue pixel 20B: 0.513 μm, and the green pixel: 0.51 μm. The decrease in film thickness from the initial film thickness of 0.525 μm was the amount of abrasion due to overetching.

[Example 2]
Example 2 was formed under the following conditions using each color thermosetting composition.

<Red pattern formation process>
A red layer 33R was formed on the support 11 under the same conditions as in Example 1 except that the blue coloring composition was applied to form a coating film having a thickness of 0.5 μm. The film thickness of this red layer 33R was 0.5 μm.

  Subsequently, a thermosetting composition “1TS-54S-300A” (manufactured by Rasa Industrial Co., Ltd.) is applied on the red layer 33R with a spin coater so as to have a film thickness of 30 nm, and then heated at 220 ° C. for 5 minutes. The entire surface stopper layer 53 was formed on the red layer 33R by performing treatment and curing.

  Thereafter, similarly to Example 1 described above, a resist pattern forming process, a dry etching process, and a photoresist removing process were performed. The first etching time of the dry etching process is 63 seconds, and the time required to remove the remaining film of the red layer 33R by the second etching is 12 seconds. Etching time with time 12 seconds added is 63 + 12 = 75 seconds, overetching time: 75 × 0.2 = 15 seconds, and the total etching time is set to 75 + 15 = 90 seconds. went. The amount of scraping in the first stage etching was 425 nm (85% etching amount), and the etching time of the entire surface stopper layer 53: about 3 seconds was required, so that there was a remaining film of about 75 nm. .

  As a result, the red pattern 27 was formed on the support 11, and the stopper pattern layer 53a was formed on the surface thereof. The LINE & SPACE size of the red pattern 27 is the same as that in the first embodiment.

<Blue layer formation process>
A blue layer 33B was formed under the same conditions as in Example 1. The film thickness of the blue layer 33B was 0.555 μm.

<Green pixel formation process>
Basically, a resist pattern forming process, a dry etching process, a photoresist removing process, a green layer forming process, and an etch back process were performed under the same conditions as in Example 1. However, the etching time of the first stage of the dry etching process was changed to 73 seconds, the overetching time was changed to 19 seconds, and the total etching time was changed to 112 seconds. Further, in the etch back process, it was calculated that it took 38 seconds to expose the stopper layer 48 on the red pixel 20R. Therefore, the etching time was 38 seconds, the over-etching time was 4 seconds, and the total etching time was Was changed to 38 + 4 = 42 seconds.

  As described above, the red pixel 20 </ b> R, the stopper layer 48, the blue pixel 20 </ b> B, and the green pixel 20 </ b> G were formed on the support 11. The color filter surface was formed in a flat state within Δ0.1 μm, as in Example 1. That is, the total thickness of the red pixel 20R and the stopper layer 48 was 0.53 μm, the red pixel was 0.52 μm, and the green pixel was 0.52 μm. The film thickness reduction from the set film thickness of 0.53 μm was the amount of abrasion due to overetching.

[Example 3]
Example 3 was formed according to the following procedure using each color thermosetting composition. Each treatment was performed under the same conditions as in Example 1 until the green layer forming step 37. The film thickness of the green layer 33G (excluding the portion laminated on the blue pattern 44 and the blue pixel 20B) obtained in the green layer forming step 37 was 0.625 μm.

  Next, a polishing process was performed with a slurry semisparse 25 diluent (stock solution: pure water = 1: 19) in a polishing (CMP) apparatus (BC-15 manufactured by AMT). At this time, the polishing treatment was performed under the conditions of slurry dilution liquid flow rate: 300 ml / min, wafer pressure: 1.2 psi, retainer ring pressure: 1.5 psi, polishing PAD rotation speed 50 rpm, and wafer rotation speed 50 rpm.

  With this polishing process, the polishing time required for exposing the red pixel 20R was 25 seconds. The over polishing rate was set to 20%, and the actual polishing time was set to 25 seconds × 1.2 = 30 seconds. A green pixel 20G was formed in the same manner as in Examples 1 and 2. In addition, each of the colored pixels 20R, 20G, and 20B was formed such that adjacent pixels contact each other on the surface. Furthermore, the surfaces of the colored pixels 20R, 20G, and 20B were formed flush with each other, and the thicknesses of the colored pixels 20R, 20G, and 20B were both 0.50 μm.

  As described above, when Examples 1 to 3 were formed, the formation process of the red pixel 20R was confirmed by CD-SEM (manufactured by Hitachi High-Technologies) at each process step, but generation of residue was not confirmed.

  In the first to third embodiments, unlike a color filter formed by a conventional photolithography method, each color is formed in a blank area where no colored pixel is formed (see FIG. 25A) or in the vicinity of the boundary between the colored pixels. It was confirmed that the formation of a dent (see FIG. 25B) in which the pixel film thickness is reduced is suppressed. From this result, it was confirmed that the pattern formation limit was improved and a fine and thin pattern could be formed.

  Further, when the rectangularity of each colored pixel in Examples 1 to 3 was confirmed with an electron microscope (SEM), the color filter formed by a conventional method for forming an isolated pattern (including a photolithography method and a dry etching method) was used. It was confirmed that the roundness of the isolated pattern (pixel) corner is much smaller than that of the colored pixel, and the rectangularity is improved. As a result, it was confirmed that the rectangularity of each colored pixel is improved as compared with the prior art by reducing the step of directly forming an isolated pattern as in the present invention.

It is sectional drawing of the solid-state image sensor and color filter of 1st Embodiment. It is a flowchart which shows the color filter manufacturing process of 1st Embodiment. It is explanatory drawing for demonstrating the red layer formation process which comprises a red pattern formation process. It is explanatory drawing for demonstrating the resist pattern formation process which comprises the process. It is explanatory drawing for demonstrating the dry etching process which comprises the process. It is explanatory drawing for demonstrating the photoresist removal process which comprises the process. It is explanatory drawing for demonstrating a blue layer formation process. It is explanatory drawing for demonstrating the resist pattern formation process of a green pixel formation process. It is explanatory drawing for demonstrating the dry etching process which comprises the process. It is explanatory drawing for demonstrating the photoresist removal process which comprises the process. It is explanatory drawing for demonstrating the green layer formation process which comprises the process. It is explanatory drawing for demonstrating the planarization process process which comprises the process. It is sectional drawing of the solid-state image sensor and color filter of 2nd Embodiment. It is a flowchart which shows the color filter manufacturing process of 2nd Embodiment. It is explanatory drawing for demonstrating the red layer formation process and stopper layer formation process which comprise the red pattern formation process of 2nd Embodiment. It is explanatory drawing for demonstrating the resist pattern formation process which comprises the process. It is explanatory drawing for demonstrating the dry etching process which comprises the process. It is explanatory drawing for demonstrating the photoresist removal process which comprises the process. It is explanatory drawing for demonstrating the blue layer formation process of 2nd Embodiment. It is explanatory drawing for demonstrating the resist pattern formation process of the green pixel formation process of 2nd Embodiment. It is explanatory drawing for demonstrating the dry etching process which comprises the process. It is explanatory drawing for demonstrating the photoresist removal process which comprises the process. It is explanatory drawing for demonstrating the green layer formation process which comprises the process. It is explanatory drawing for demonstrating the planarization process process which comprises the process. It is explanatory drawing for demonstrating the conventional color filter formed by the photolitho method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,47 Solid-state image sensor 11 Support body 13,47 Color filter 20B Blue pixel 20R Red pixel 20G Green pixel 27 Red pattern 33B Blue layer 33R Red layer 33G Green layer 44 Blue pattern 48 Etching stopper layer

Claims (9)

In a color filter manufacturing method for manufacturing a color filter formed by two-dimensionally arranging colored pixels of a plurality of colors on a support,
A first color pattern forming step of forming a striped first color pattern comprising a thermosetting composition of a first color containing at least a red pigment on the support;
A second color layer forming step of forming a second color layer composed of a thermosetting composition of the second color on the support on which the first color pattern is formed;
The first color pattern and the second color coloring layer are patterned by a dry etching method to form a first color pixel and a second color pixel on the support and to form a third color pixel. A patterning step of forming a third color pixel formation region;
A method for producing a color filter, comprising: forming a third color pixel in the third color pixel formation region by forming the third color pixel with a thermosetting composition of a third color.   The method for producing a color filter according to claim 1, wherein the thermosetting composition of the first color contains yellow color. The first color pattern forming step includes
A first colored layer forming step of forming a first colored layer composed of the thermosetting composition of the first color on the support;
Forming a resist pattern corresponding to the first color pattern on the first colored layer using a photoresist; and
3. The method of manufacturing a color filter according to claim 1, further comprising: a dry etching step of dry-etching the first color layer using the resist pattern as a mask to form the first color pattern. 4.   In the second color layer formation step, a coating film of the thermosetting composition of the second color is formed on the support on which the first color pattern is formed, and the coating film is baked to form the coating film. The method for producing a color filter according to any one of claims 1 to 3, wherein a second colored layer is formed. The third colored pixel forming step includes:
Forming a third color layer made of the thermosetting composition of the third color on the support on which the first color pixel, the second color pixel, and the third color pixel formation region are formed; A third colored layer forming step;
A flat surface that forms a third color pixel by performing a flattening process on the surface of the third color layer until at least the three color layer is removed from the first color pixel and the second color pixel. 5. The method for producing a color filter according to claim 1, further comprising a conversion treatment step. In the patterning step, the second color coloring layer is patterned to integrally form the second color pixel and a second color pattern covering the surface of the first color pixel,
In the planarization process step, the second color is removed from the first color pixel until the second color pattern is removed after the third color layer on the first and second color pixels is removed. 6. The method of manufacturing a color filter according to claim 5, wherein the surface of each of the pattern, the second color pixel, and the third color pixel is flattened.   The method for manufacturing a color filter according to claim 5, wherein the flattening process is performed by at least one of an etch back process and a polishing process. When the planarization process is performed by the polishing process,
8. The method for producing a color filter according to claim 7, wherein after the polishing treatment, a water washing step of washing the surface to be polished and a dehydration treatment step of performing a dehydration treatment on the surface to be polished after the water washing step are performed. Before the resist pattern forming step, it has a stopper layer forming step of forming a transparent flattening stopper layer on the first colored layer.
The resist pattern forming step forms the resist pattern on the stopper layer,
The dry etching step uses the resist pattern to dry-etch the stopper layer in a stripe shape corresponding to the first color pattern,
9. The method for manufacturing a color filter according to claim 3, wherein in the patterning step, the stopper layer having a stripe shape is patterned into a shape corresponding to the first color pixel. 10.

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