200844245 九、發明說明： 【發明所屬之技術領域】 本發明，係有關在由聚醯亞胺樹脂等所成之基底薄膜 表面由銅等形成導電層之撓性積層板，尤其是有關作為 TAB帶、可撓性電路基板或可撓性配線板等使用之撓性積 層板及撓性積層板之製造方法。 本申請案係根據於2007年5月8日向日本提出之特願 2007— 123418號申請案而主張優先權，援用其内容。 【先前技術】 近年來因有利於電子機器類之小型化、輕量化、構造 之柔軟化等之電路基板，對使用如帶式自動結合似& Tape Automated Bonding)或撓性印刷電路（Fpc，Flexibie Mm Circuit)等之電路基板之需求大增。 “作為此等電路基板使用之撓性積層板，例如有··由直 =錢 rspr，g)、離子侧ic)n piatting)等之薄膜 J著電：圖安亞胺等所成之基底薄膜上將金屬薄膜 等堆产人fr 後，再在此金屬薄膜上由電解電鑛 表面上形成金屬薄膜乂甘^ 又牡卷底厚膜 成導電層，將此導仰心/、 電料堆積金属形 但是此等構造之撓性積声柘，乂…广〜已，讀。 驟或在電解電穿牛騎☆ 形成電路圖案之步 合強度降會有基底薄膜與導電層間之結 牛低而有易於剝離之問題。 在此，例如在專利文獻1至-提案在導電層與基板 320147 5 200844245 薄膜間設中間層，用以提高基底薄膜與導電層間之結合強 度之繞性積層板。 尤其是在專利文獻6記載之撓性積層板中，配置含有[Technical Field] The present invention relates to a flexible laminated board in which a conductive layer is formed of copper or the like on a surface of a base film formed of a polyimide resin or the like, particularly as a TAB tape. A flexible laminated board or a flexible laminated board used for a flexible circuit board or a flexible wiring board. This application claims priority based on the application of the Japanese Patent Application No. 2007-123418 filed on May 8, 2007, and uses its contents. [Prior Art] In recent years, circuit boards that are advantageous for miniaturization, weight reduction, and softening of electronic devices have been used, such as Tape Automated Bonding or Flexible Printed Circuits (Fpc, Demand for circuit boards such as Flexibie Mm Circuit) has increased significantly. "The flexible laminated board used as such a circuit board, for example, a light rspr, g), an ion side ic) n piatting, etc., a film J: a base film formed of a graphene or the like After stacking the metal film and other stacks of fr, the metal film is formed on the surface of the electrolyzed iron ore and the thick film of the bottom of the pad is formed into a conductive layer, and the conductive core/electric material is deposited. Shape, but the flexible accumulation of these structures, 乂 ... wide ~ already, read. 或 or in the electrolysis of the cattle riding ☆ The formation of the circuit pattern step strength will have a low between the base film and the conductive layer Here, for example, in Patent Document 1 to - an intermediate layer is provided between the conductive layer and the substrate 320147 5 200844245, and a winding laminate for improving the bonding strength between the base film and the conductive layer is used. In the flexible laminated board described in Patent Document 6, the arrangement includes
Cr之=間層，由於Cr之d電子與聚醯亞胺樹脂之冗電子 之共j貝鍵，得以提高中間層與導電層與基底薄膜間之結合 強度。 但是二近年來，使用上述撓性積層板之撓性電路基板 亦多用在高溫環境下之汽車及飛機等之電子裝置零件，仍 擊有在高溫環境下能有高可靠性之撓性積層㈣^ 然而，以往之撓性積層板中，在高溫環境下其結合強 度會降低為眾所周知之事實。本發明人等經過檢討之後發 見該、、《口 ^度~低之原因在於中間層之合金與聚酿亞胺 树月曰之結合力降低所引起。 :二中間層之合金與聚醯亞胺樹脂之結合力降低之機構， 係認為由合金氧化引起界面劣化所致。 . 詳述之，構成基底薄膜之聚醯亞胺樹脂，且容 散氧氣與水蒸氣之性質， 底 ^ 、 貝U此目基底潯膜背面（不設中間層- 之面）通過大氣巾之氧氣與水蒸氣到達中間層與基底薄膜 之界面:以致在此界面使中間層氧化。尤其是在高溫環境 下，因爲氣與水蒸氣之擴散加速’使中間層與基底薄膜之 結合強度較常溫環境下大為降低。 〔專利文獻1〕日本特開平M — 丨33729號公報 〔專利文獻2〕日本特開平〇3 — 274261號公報 〔專利文獻3〕曰本特開平〇5—183〇12號公報 320147 200844245 〔專利文獻4〕日本特開平〇7一 197239號公報 〔專利文獻5〕日本特開平〇8一33〇695號公報 〔專利文獻6〕日本特開2〇〇5 一 26378號公報 【發明内容】 [欲解決之課題] 本發明是有鑑於上述問題而為者，以 Ϊ下之基底薄膜與中間層的結合強度降低較小，而^= 罪性的撓性積層板及該撓性積層板之製造方法。〇 [解決手段] 為了解決此問題，本發明相關之撓性 在 基底薄膜;在該基底薄膜上積層之中間層：：在命；門 積層板，在上述基底薄膜中，至 :層上速中間層之表面係由聚醒亞胺構 中間層是含有55重量%以上之Ni，4重量籌二？ 同時，亦含有較Cr容易氧化之易氧化元素，：： I之濃度是在㈣方向設成在上述基 依據本發明之—撓性積層板底广為“。 因設置含有55會曰〇/ 孜在基底潯膜與導電層之f 重驗…Η 成留存於基底薄膜^^化，素的中間層侧 化元素優先被氧化而可抑以之及水蒸氣，使易幸 子與聚醯亞胺樹脂之、電子的乳化。如是’ Cr之d雩 環境下亦可抑制結合強度之卩久貝鍵不致被破壞，在高溫 元素之濃度因設定成較低，^ ^又’導電層邊之易氧化 P制因易氧化元素而引起之 320147 7 200844245 中間層性質之變化。 再者，較Cr易於氧化之元素，係指在此撓性積層板使 用之溫度範圍中（例如一2CTC至200。〇,其氧化物產生自由 能亦較Cr為小之元素。 在此，亦可以Mo作為上述中間層所含之上述易氧化 元素。 古此時’於中間層之基底薄膜邊之_濃度由於設定較 ^ M〇將優先被留存於基底薄膜與中間層界面之氧氣鱼 水蒸氣所氧化’而能確實抑制Cr之被氧化。又，雖然M〇 ^耐餘性高而㈣性較差，但導電層邊之m。濃度設成較 土、底缚膜邊為低，因此容易由钱刻形成電路圖案。 再者，上述中間層亦可構成為在積層方向之⑺ 一定。 4 此時，如使基底薄膜邊之尽 ― 底薄膜邊之Cr濃度亦不致減少广7°’、之7辰度板：’基 ^ κ 又成夕，可因Cr之d電子與聚_ '電子之共價鍵而提高中間層與基底祕之麵 圍擴^二二二〜鳥’及〜而使-相之固溶· 、 思疋’可形成緻密的鈍態被膜。 種或2錄一心中間層可含有自W、Ta、Nb、及Ti中選擇 1戈2種以上，此等w、Ta、Nb、及Ti及含有量之合舍 320147 8 200844245 亦可為6重量％以下。 此時，因w、Ta、Nb、及Ti而形成緻密之純態被膜， 可P々止4工钱斑（pming)，而可提高撓性積層板之可靠性。 又，本發明相關之撓性積層板之製造方法，為上述撓 卜積層板之衣方法’係具有在上述基底薄膜之表面積層 上述中間層之積層步驟，該積層步驟係具備在上述基底薄 膜之/表面以合有上述易氧化元素之基底靶子（Basetarget) 而進行賤射（sputtering)之基底賤射步驟，與在前基 齡射=驟之後，以較上述基絲子之易氧化元素濃度為低之 低/辰度靶子進行濺射步驟的兩個濺射步驟中之至少一個。 ，據本發明相關之撓性積層板製造方法，因具備：在 基底β模表面進行含有上述易氧化元素之基底革巴子進行賤 射之濺射步驟；及在上述基錢射㈣之後，以較上述基 底革巴子遭度低的上述易氧化元素低濃度革巴子進行賤射之機 射步驟’因此在中間層中基底薄膜邊可設定較高濃度之 I氧化元素。 又 在此，將上述基底薄膜自上游邊輸送至下游邊，於上 游ί配置上述基絲子’於下游邊配置上述低濃度乾子， 連續進行上述基底濺射步驟與上述濺射步驟，同時藉由變 更^述基底乾子及上述低濃度乾子之輸送方向長度，'亦二 以凋整上述易氧化元素之濃度分布構成。 此時，由於連續進行上述基底濺射步驟與上述濺射步 驟’而可有效形成中間層，能以低成本製造此撓性積層板二 又，因變更上述基底靶子及上述低濃度靶子之輪送方向 320147 200844245 、、可使基底薄膜之輪送速度在固定狀態下調整上述基底 /賤射步驟與上述賤射步驟之時間，可精密調整在中間層之 易氧化元素之濃度分布。 [發明效果] 據本杳月，在鬲溫環境下亦甚少降低基底薄膜與中 s之、"Ό強度，可提供可靠性高之撓性積層板及此撓性 積層板之製造方法。 【實施方式】 # 卩下參照附圖說明本發明之—個實施形態之撓性積層 板。 …此撓性積層板係如第1圖所示，具備：基底薄膜1 ; 形成在基底薄膜1之表面之中間層2;及形成在該中間層2 上之導電層3 〇 —基底薄膜1係由聚醒亞胺樹脂所構成，在此構成基底 薄膜1之聚醯亞胺樹月旨為BPDA系聚酸亞胺樹脂或PMDA Φ系聚醯亞胺樹脂均可6 一般以ΒΡΕ)Α(Βί^αΝ tetraCarb0xyHc acid)為原料之聚鸚亞骇薄膜c日本宇部興產 製商品名「U_pilex」等）’其熱與吸濕尺寸穩定性及剛性佳，. 主要使用於TAB’但有舆金屬薄膜之結合強度較低之特 徵。另一方面，以 PMDA(py義eilitic dianhydride，·均苯 四酸二酐)為原料之聚醯亞胺薄膜(日本東麗杜邦製商品 名「kaPton」，.鐘湖化學工業製商品名「却⑽」.等）則與金 屬薄膜之接合強度高。採用時以考慮此等特性而適當選擇 為宜0 320147 10 200844245 亦可積層多種聚醯亞胺樹 間層2之表面為由聚醯亞 又，基底薄膜！可為單層， 脂之積層薄膜，或亦可僅形成中 胺樹脂所構成。 又I底薄膜1之厚度並無特別限 ;薄膜1所需剛性之觀點而言以有一以上為宜= 為撓性積層板所需n變形之觀點而言則以m 下為宜。 中間層2係含55帝旦〇/、… 重里％以上之犯，4重量％以上之In the case of Cr = interlayer, the bonding strength between the intermediate layer and the conductive layer and the base film is improved by the co-bonding of the electrons of Cr and the electrons of the polyimide resin. However, in recent years, flexible circuit boards using the above-mentioned flexible laminates are also used in electronic devices such as automobiles and airplanes in a high-temperature environment, and still have a flexible laminate capable of high reliability in a high-temperature environment (4)^ However, in the conventional flexible laminate, the bonding strength is lowered in a high temperature environment as a well-known fact. The inventors of the present invention have found that the reason for the decrease in the degree of mouth-to-lowness is caused by a decrease in the bonding strength between the alloy of the intermediate layer and the polyamidene tree. : The mechanism for reducing the bonding strength between the alloy of the two intermediate layers and the polyimide resin is considered to be caused by interface deterioration caused by oxidation of the alloy. Specifically, the polyimine resin constituting the base film, and which disperses the properties of oxygen and water vapor, the bottom of the substrate, the back surface of the substrate (without the intermediate layer - the surface) passes through the oxygen of the air towel The interface with the water vapor reaches the intermediate layer and the base film: so that the intermediate layer is oxidized at this interface. Especially in high-temperature environments, the diffusion of gas and water vapor is accelerated, so that the bonding strength between the intermediate layer and the base film is greatly reduced compared with the normal temperature environment. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Problem] The present invention has been made in view of the above problems, and is a method for producing a flexible laminated board and a flexible laminated board in which the bonding strength between the underlying base film and the intermediate layer is reduced with a small decrease in strength. 〇 [Solution] In order to solve this problem, the present invention relates to a flexible film on a base film; an intermediate layer laminated on the base film: a door stacking plate, in the base film, to: a layer upper speed intermediate The surface of the layer is composed of a polyamidamine intermediate layer containing more than 55% by weight of Ni, and 4 weights of two? At the same time, it also contains an easily oxidizable element which is easier to oxidize than Cr, and the concentration of I: is set in the direction of (4) in the above-mentioned base according to the invention - the bottom of the flexible laminated board is widely ". Because the setting contains 55 meeting / 孜In the substrate ruthenium film and the conductive layer, re-inspection... Η is retained in the base film, and the intermediate layer of the element is preferentially oxidized to suppress water vapor, so that Yishouzi and polyimine resin Emulsification of electrons. In the case of 'Cr d雩 environment, the bond strength can be suppressed, and the bond is not destroyed. The concentration of the element in the high temperature is set lower, ^ ^ and the conductive layer is easy to oxidize. 320147 7 200844245 Change in the properties of the intermediate layer due to the oxidizable element. Furthermore, the element which is more susceptible to oxidation than Cr refers to the temperature range in which the flexible laminate is used (for example, a 2CTC to 200. 〇, its oxidation The free energy generated by the material is also smaller than that of Cr. Here, Mo can also be used as the above-mentioned easily oxidized element contained in the intermediate layer. At this time, the concentration of the base film on the intermediate layer is set to be lower than Will be kept on the base thin The oxidation of oxygen fish water vapor at the interface with the intermediate layer can surely suppress the oxidation of Cr. Moreover, although M〇^ has high tolerance and (4) is poor, but the conductivity layer is m. The concentration is set to be soil and bottom. Since the film edge is low, it is easy to form a circuit pattern by money. Further, the intermediate layer may be formed to have a constant (7) in the lamination direction. 4 At this time, if the base film is edged, the Cr concentration of the bottom film side is also Does not reduce the wide 7°', the 7th degree plate: 'base ^ κ and eve, can be due to the co-bond of Cr d electron and poly _ 'electron to improve the middle layer and the base secret surface expansion ^ 22 Two ~ bird 'and ~ and make - phase solid solution ·, thinking 'can form a dense passive film. Species or 2 records one heart intermediate layer can contain 1 from the W, Ta, Nb, and Ti In the above, the w, Ta, Nb, and Ti and the content of the mixture may be 6% by weight or less. In this case, a dense pure film is formed by w, Ta, Nb, and Ti. P々4 pming can improve the reliability of the flexible laminate. Further, the manufacturer of the flexible laminate related to the present invention a method of laminating the above-mentioned interfacial laminate sheet having a lamination step of the intermediate layer on the surface layer of the base film, the laminating step comprising a base target on the surface/surface of the base film to incorporate the above-mentioned oxidizable element (Basetarget) The substrate sputtering step of performing sputtering, and the sputtering step of the target having a low/initial target lower than the concentration of the oxidizable element of the above-mentioned base filament after the previous base age shot = At least one of the two sputtering steps, the method for producing a flexible laminate according to the present invention, comprising: a sputtering step of performing a sputtering on the surface of the base β mold by using the base smear containing the above-mentioned oxidizable element; After the above-mentioned base shot (4), the above-mentioned oxidized element having a low concentration of the above-mentioned base leather bar is subjected to a lower-concentration leather bar, and a higher concentration of I oxidation can be set in the intermediate layer. element. Here, the base film is transported from the upstream side to the downstream side, and the low-concentration dry matter is disposed downstream of the base yarn 'the upstream side of the base yarn', and the base sputtering step and the sputtering step are continuously performed while borrowing The length of the transporting direction of the base stem and the low-concentration stem is changed by the change, and the thickness distribution of the above-mentioned easily oxidizable element is also formed. In this case, since the intermediate layer can be effectively formed by continuously performing the above-described base sputtering step and the sputtering step, the flexible laminated board can be manufactured at low cost, and the transfer of the substrate target and the low-concentration target can be changed. In the direction 320147 200844245, the substrate/spraying step and the above-described sputtering step can be adjusted in a fixed state by the rotation speed of the base film, and the concentration distribution of the easily oxidizable element in the intermediate layer can be precisely adjusted. [Effect of the Invention] According to this month, the base film and the medium strength of the base film are less reduced in the temperature environment, and a highly reliable flexible laminate and a method for producing the flexible laminate can be provided. [Embodiment] A flexible laminated board according to an embodiment of the present invention will be described with reference to the drawings. As shown in Fig. 1, the flexible laminated board comprises: a base film 1; an intermediate layer 2 formed on the surface of the base film 1; and a conductive layer 3 formed on the intermediate layer 2 - a base film 1 It is composed of a polyamidene resin, and the polyimine resin constituting the base film 1 herein is a BPDA-based polyimine resin or a PMDA Φ-based polyimide resin. ^αΝ tetraCarb0xyHc acid) is a raw material of the polypyrene film c. The product name "U_pilex", etc. of Japan Ube Industries, Ltd.) 'The heat and moisture absorption dimensional stability and rigidity are good. It is mainly used in TAB' but has a base metal film. The combination of low strength characteristics. On the other hand, a polyimide film made of PMDA (pyyi eilitic dianhydride, pyromellitic dianhydride) (trade name "kaPton" manufactured by Toray Dupont, Japan. (10)", etc.) The bonding strength with the metal film is high. When adopting, it is appropriate to consider these characteristics. It is preferable to use it. 0 320147 10 200844245 It is also possible to laminate a variety of polyimine layers. The surface of the interlayer 2 is made of polyphthalamide and base film! It may be a single layer, a laminated film of a fat, or may be formed of only a medium amine resin. Further, the thickness of the film 1 of the I underlayer is not particularly limited. From the viewpoint of the required rigidity of the film 1, it is preferable to use m or more from the viewpoint of the n-deformation required for the flexible laminate. The middle layer 2 contains 55 emperor 〇 /, ... more than 5% of the crime, 4% by weight or more
Cr ’及較Cr容易氣化之县条几—主 人 _ 之易乳化凡素之合金所構成。再者， 所明較Cr易於氧化之易氧化元素，係指在使用此挽性積層 板之溫度環境範圍（例如—2(rc至·。c)中，其氧化物產生 自由能較Cr為小之元素。例如M〇、Si、Ti、Ah 〜、 W、Ta 等。 於本實施形態，中間層2含有之易氧化元素為Μ〇, 中門層2正體之成分為见；67.5重量0/〇，Cr ; 20重量％， jo ’ 12.5重[%。惟中間層2全體中之各成分含有量並不 =限於上边値，在不脱離本發明之技術主旨範圍可適當設 疋又奶、Cr及易氧化元素之含有量上限値，係由與其 他成分之平衡而決定，本發明不特別限制。 —中間層2是在其積層方向使M()之濃度有變化。構成 如第2圖所示，基底薄膜丨側邊之“^濃度較高’向導電 層3側邊Mo之濃度逐漸變低。至於Cr之濃度在上述積層 方向略為固疋’ Ni之濃度則隨Mo之濃度變化而變化。例 如中間層2中之基低薄膜1之界面附近為，Ni ; 6〇重量 320147 11 200844245 % …20重量％，Mo ; 2〇重量％，而與導電層 面附近為 Ni;7m，Cr;2()重量 ％，Mq;5 " 再者’巾間層2之厚度並不特別F艮制，但是自提^ 蝕性之觀點而言以10nm以上為 门才 ^ 马佺，另在積層中間層2之 ^刻形成電路圖案時，為確絲刻速度能有以下 入導電層3為具有導電性之材質’具體的係自銅、銅合 二成:尤：Ϊ金、銀、金、白金等選擇1種或2種以上所 佳。純銅、或含鎳、鋅或鐡之銅合金所構成為 導電層3之厚度並不特別限制，但有1〇賊^上即可， ^ ^上則更佳。又，導電層3之厚度以不超過_nm =夕過3〇—時導電層3之成本變得過高，低於、 犄在電鍍步驟恐會易發生燒斷等瑕疵。 其次說明此構成之撓性積層板之製造方法。 2(積層步驟）。首先，在基底薄膜1之表㈣ 11(B"^Tar^ Mo /辰又丁乂土氐靶子n為低之低濃度靶子U進行第2 射。由此形成基底薄们侧邊之_濃度較高而導電^ 侧邊之濃度較低之中間層2。 曰 _10於於H形態中’如第3圖所示，基底薄膜1由輸送 t 1 ㈣向前頭x方向，在與基底薄膜1表面相面對之 故’在輪送方向留間隔設置基底革巴子η及低濃度革巴子12。 320147 12 200844245 基絲子11位於輪送方向上游售 方向下游，可連續谁广I + 低辰度靶子12位於輪送 變更基絲3之^方?射與第2次減射。在此藉由 攻年巴于Π之褕廷方向長度u，與工 輪送方向長度L2，則可，敫、勝M 士 、·又靶子12之 4正歲射％間而控制積層厚度。 土/巴11及低濃度靶子12，亦可採用市隹 之耐蝕合金（例如二篸姑赳制# 力了知用市售 晉。/ A/ 材科製商品名「M础」，Ni;60重 里％，Mo ; 19 重量 ％，Cr; 19 重量 ％)。 Μ其次。在中間層2之上形成導電層3。為了形成導， 接十 ；上述各方法形成某種程度之薄膜 堆^在該金屬薄膜上以電解電鍍法或無電解電鍍法等 堆積金屬電鍍層達規定厚度而形成導電層。“ 如此構成之撓性積芦杯 士 i 钱刻即可形成電路ΗΪ 層及中間層2進行 、 成毛路圖木，可作為撓性電路基板使用。蝕刻 °以使用通系使甩之氯化鐡溶液，'或在氯化鐡溶 加過氧化氫或硫酸鐡溶液而提高钱刻性能者。夜中外 於本實施形態之龙性積層板中，在基底薄膜 設嫩;，删以上，cr;4重量^ 才3议&谷易乳化之Mo之中間層2,由於基底薄膜 則邊之Mo濃度設成較高，因此存留於基底薄膜」與中 曰^ 2界面之氧氣及水蒸氣優先使m〇氧化，而可抑制& 之氧化。如是，Cr之d電子與聚醯亞胺樹脂之冗電子之共 =不被破壞’而可抑制即使在高溫環境下之結合強度: 牛民。又’導電層3侧邊之汾〇濃度設定為較低，導電層 320147 13 200844245 案 側邊之耐蝕性不致過大，可以容易地以蝕刻形成電路圖 b又，於中間層2，構成在其積層方向之Cr濃度為2〇 重成固定，既使基底薄膜丨側邊之M〇濃度增高，基 底薄膜1邊之Cr濃度也不減少，由於Cr之d電子與聚醯 ，胺树月曰之7Γ电子之共價鍵’確實可使中間層2與基底薄 膜1之結合強度提高。 又，此撓性積層板，係由在基底、薄膜j表面含有 之基絲子11來進行基底㈣，，時在基底濺射後，由 Mo濃度較基絲子n為低之低濃餘子12進行第p ::二：此中間層2中之在基底薄膜！邊之編濃度 可設定為較高。 ^ 膜1=;”= 態，由輸送輕10自上游輸送基底薄 族m而在與基底薄膜i之表面相面對之邊 方向留間隙配設基絲子u與低濃心子12，基底2 11位於輸送方向上游之一邊，低濃度 二幹方' 向下游之-邊，因此可缝進㈣底_與==方 可有效率形成中間们，得以低成本製造撓^^射而 曲又，藉由變更基底革巴子n之輸送方向長度2 展度乾子12之輸送方向長度乙，得以調整賤射日 Ί 積層厚度，因此可以精密地調整中間層2之从二产而控制 再者’構造材料也可使用市售之耐蝕合 子11而在基底薄膜i之表 '乍為基底靶 製造撓性積層板。 間層2,則能以低成本 320147 14 200844245 如上σ兒明本發明實施形態之撓性積層板，但是本發明 並不党限於此實施方式，在不脱離本發明之技術範圍内可 適當變更。 Ο如易氧化元素係以Mo為例作說明，但是不限定 ;匕在使用Ta、W等之撓性積層板之溫度範圍，只要氧 化物產生自由能較Cr小之元素即可。 中間層含有A1、Fe^ C〇中選擇1種或2種以上， 而此等A卜：Fe及c。之含有量合計亦可以有w重量％以 下。因含有此等Al、Fe及Co可使Ni相之固溶範圍擴大， Ni相穩定而可穩定形成緻密不動態被膜。 又’中間層含有W、Ta、Nb及Ή中選擇i種或2種 乂上而此等W、Ta、Nb及Ti之含有量合計亦可以有6 重量^以下。因含有此等W、Ta、Nb及Ti可形成緻密之 不動心被膜’可防止發生鍅斑（Pitting)，提高此撓性積声 板之可靠性。 、曰 再者，中間層亦可含有Ni、Cr、易氧化元素以外之不 -Γ^ ^it ^ ^ ^ ^ ^ ^ # ^ ^ * tifp 在2重量％以下為佳。 再者巾間層含有多數易氧化元素時，多數易氧化元 素中之至）其―’在中間層之積層方向之基底薄膜邊之濃 度要設定為較高即可。 、又 > 上况明配设1個基底革巴子與1個低濃度革巴子來 ίί/成中間層之形’但是並不受限於此，如第4圖所示， 亦可配& 1個基絲子與2個以上低濃㈣子來形成中間 320147 15 200844245 諦 層。 又，在積層中間屬時’賤射法以外亦可適 次、離子電鍍法等乾式薄膜形成技術。 八讀 又，在此說明中間層係構成如第2圖之μ 層方，續變化，但是並不受限於此，例” Γ圖： 濃度為不連續變化。 6圖所示構成Mo •亦可二如二說明以紐形成電路圖*，但不限定於此， y在基底㈣表面由中間層與導電層形成電路圖案形 再^，撓性㈣板㈣是形成撓性電路基板，亦可構 成丁AB f、撓性電路配線板等。 又二上係說明在基底薄膜之一面形成中間層及導電 以電此，在中.間層之雙面亦可形成中間層 •[實施例] 以下舉實施例用以證明本發明之效果。 如第3圖所示，由輸送輥輸送基底薄膜，向輸 南 1乾子與第2|&子使其與基底薄膜之表面相面對: 連續施行濺射形成中間層.此時變更第1靶子與第2靶子 二材質與輸送方向長度。如是在中間層上形成 (實施例1至5) 彳广層 基底溥膜係使用BpDA系聚醯亞胺樹脂所構成之宇 Λ產么司製商品名「Upilex-S」（厚度38//m)。 320147 16 200844245 第1靶子是使用三菱材料公司製商品名MAT21(Ni_i9 重量％，Mo-19重量％，Cr_2重量％Ta合金)，其輸送方向 長度為1 cm 〇 第2靶子是使用不含易氧化元素之见_2〇重量％ q合 金。在第1靶子的輸送方向長度定為丨時，第2靶子之輪 送方向長度設為12、9、4、1、〇、1。 ' (實施例6) 基底薄膜是使用如同實施例1至5。 第1乾子是使用三菱材料公司製商品名MA22(Ni-l3 重里0/〇’ Mo-22重量％，Cr_4重量％，Fe-3重量％w合金）， 其輸送方向長度為1〇 第2乾子是使用不含易氧化元素之见_2〇重量合 金。其輸送長度為1 〇 (實施例7) 基底薄膜是使用如同實施例1至6。 第1乾子是使用三菱材料公司製商品名MC合金（NM 重1 /。，Mo-45重量％，cr合金），其輸送方向長度為1。 第2乾子是使用不含易氧化元素之Ni-20重量合 金。其輸送方向長度為丨。 (比較例1至5) 基底薄膜是使用如同實施例1至7。 第1乾子是使用不含易氧化元素之犯-20重量％Cr合 金，其輸送方向長度係在後述之第2輸送方向長度為丨時 為 12、9、4、1、0.1 〇 320147 17 200844245 弟2靶子是使用二菱材料公司製商品名MAT21(Ni; 19重量％ ’ MQ ; 19重量％，G ; 2重量％Ta合金），其輸 送方向長度為1。 即將實施例！至5之第^子與第2乾子以相反配置 而形成之中間層。 (比較例ό) 基底薄膜是使用如同實施例丨至7。 第1革巴子疋使用不含易氧化元素之Ni_2〇重量％Cr合 金。其輸送方向長度為1。 第2革巴子是使用三菱材料公司製商品名MA22(Ni_13 重I%’ Mo-22重量％，Cr_4重量％，Fe-3重量％w合金）， 其輸送方向長度為1。 ’ 即’將實施例6之第！靶子與第2靶子以相反配置而 形成中間層者。 (比較例7) 基底溽膜是使用如同實施例1至7。 第1乾子是使用不含易氧化元素之Ni-20重量合 金。其輸送長度為1。 曰苐2靶子是使用三菱材料公司製商品名MC合金(Ni-1 重里/〇，M〇_45重量％ Cr合金），其輸送方向長度為1。Cr ’ and the county that is easier to gasify than Cr—the main _ _ eu emulsified alloy. Furthermore, it is clear that the oxidizable element which is easier to oxidize than Cr means that the free energy of oxide generation is smaller than that of Cr in the temperature environment range in which the stratified laminate is used (for example, -2 (rc to · c). For example, M〇, Si, Ti, Ah~, W, Ta, etc. In the present embodiment, the intermediate layer 2 contains an oxidizable element which is ruthenium, and the middle gate layer 2 has a positive body composition; 67.5 weight 0/ 〇, Cr; 20% by weight, jo '12.5 weight [%. However, the content of each component in the entire intermediate layer 2 is not limited to the upper side, and may be appropriately set and milk without departing from the technical scope of the present invention. The upper limit of the content of Cr and the oxidizable element is determined by the balance with other components, and the present invention is not particularly limited. The intermediate layer 2 has a change in the concentration of M() in the lamination direction. As shown, the "higher concentration" of the side of the base film turns toward the side of the conductive layer 3, and the concentration of Mo gradually becomes lower. As for the concentration of Cr, it is slightly solid in the above-mentioned layering direction, and the concentration of Ni varies with the concentration of Mo. For example, the vicinity of the interface of the base film 1 in the intermediate layer 2 is Ni; 6 〇 weight 3201 47 11 200844245 % ... 20% by weight, Mo; 2% by weight, and Ni is near the conductive layer; 7m, Cr; 2% by weight, Mq; 5 " Furthermore, the thickness of the layer 2 is not In particular, the F-system is used, but from the viewpoint of improving the corrosion, it is only 10 nm or more, and when the circuit pattern is formed in the middle layer 2, the following conductive layer can be formed for the speed of the silk. 3 is a material having conductivity. The specific one is selected from copper or copper. In particular, one or two or more types are selected from the group consisting of gold, silver, gold, and platinum. Pure copper or nickel, zinc or bismuth. The thickness of the conductive layer 3 formed by the copper alloy is not particularly limited, but one thief can be used, and ^ ^ is better. Moreover, the thickness of the conductive layer 3 is not more than _nm = 夕 over 3 〇 - The cost of the conductive layer 3 becomes too high, and it may be likely to be blown or the like in the plating step. Next, a method of manufacturing the flexible laminated board of this configuration will be described. 2 (Lamination step). First, at the substrate Table 4 of the film 1 (4) 11 (B"^Tar^ Mo / chen and 乂 乂 乂 氐 target n is a low low concentration target U for the second shot. Thus forming the base thin side _The intermediate layer 2 has a higher concentration and a lower concentration of the conductive side. 曰10 is in the H form. As shown in Fig. 3, the base film 1 is transported by t 1 (four) forward x in the direction of the base. The surface of the film 1 faces each other. 'The base leather bar η and the low-concentration leather bar 12 are arranged at intervals in the direction of the wheel. 320147 12 200844245 The base wire 11 is located downstream in the direction of the upstream direction of the rotation direction, and can be continuously wide I + low. The Chendu target 12 is located in the rotation of the base wire 3 and the second shot. Here, by the length u of the attacking direction of the horse, and the length L2 of the direction of the work wheel,敫, win M, and target 12 of the 4 years old shot to control the thickness of the layer. Earth/Bag 11 and low-concentration target 12, can also be used in the city's corrosion-resistant alloy (for example, Erqi Guyu system #力知知用市售晋. / A / material system name "M base", Ni; 60 % by weight, Mo; 19% by weight, Cr; 19% by weight). Second, second. A conductive layer 3 is formed over the intermediate layer 2. In order to form a conductive layer, each of the above methods forms a film stack on the metal thin film, and a metal plating layer is deposited to a predetermined thickness by electrolytic plating or electroless plating to form a conductive layer. "This kind of flexible product can be formed into a circuit layer and an intermediate layer 2, which can be used as a flexible circuit board. Etching is used to make lanthanum chloride. Solution, 'or increase the money engraving performance by adding hydrogen peroxide or barium sulfate solution to barium chloride. In the long-term laminate of this embodiment, the base film is set to be tender; The weight of the intermediate layer 2 of Mo is emulsified, and the Mo concentration of the base film is set to be higher, so the oxygen and water vapor remaining at the interface between the base film and the middle layer are preferentially m. The ruthenium is oxidized to suppress the oxidation of & If so, the total electrons of Cr d electrons and polyimine resin are not destroyed, and the bonding strength even in a high temperature environment can be suppressed: Niumin. Moreover, the germanium concentration of the side of the conductive layer 3 is set to be low, and the corrosion resistance of the side of the conductive layer 320147 13 200844245 is not excessively large, and the circuit pattern b can be easily formed by etching, and the intermediate layer 2 is formed in the lamination direction thereof. The Cr concentration is fixed at 2 〇, so that the concentration of M 丨 on the side of the base film is increased, and the Cr concentration on the side of the base film 1 is not reduced, due to the d electrons of the Cr and the polyfluorene, the electrons of the amine tree The covalent bond 'actually increases the bonding strength between the intermediate layer 2 and the base film 1. Further, in the flexible laminate, the base (4) is formed on the base and the base yarn 11 contained on the surface of the film j, and the low concentration of Mo is lower than the base n after the base sputtering. 12 proceed to the p::2: in the intermediate layer 2 in the base film! The edge density can be set higher. ^ Membrane 1 =; "= state, the transporting light 10 from the upstream transport substrate thin family m and in the direction of the side facing the surface of the base film i to leave a gap between the base u and the low-concentration 12, the base 2 11 is located on one side upstream of the conveying direction, and the low concentration of the two sides is downstream to the side, so it can be sewn into the (four) bottom _ and == to form an intermediate with efficiency, so that it can be manufactured at low cost. By changing the length of the transport direction of the base leather b, the length of the transport direction of the dry stub 12, the thickness of the stack can be adjusted, so that the intermediate layer 2 can be precisely adjusted and controlled. The material can also be made of a commercially available corrosion-resistant zygote 11 and a flexible laminate can be produced on the surface of the base film i as a base target. The interlayer 2 can be used at a low cost 320147 14 200844245 as described above. The present invention is not limited to the embodiment, and may be appropriately modified without departing from the technical scope of the present invention. For example, an easily oxidizable element is described by taking Mo as an example, but is not limited; , W, etc. The temperature range of the flexible laminate, only The oxide may have an element having a free energy smaller than that of Cr. The intermediate layer may contain one or more of A1 and Fe^C, and the contents of such A:Fe and c may also have a weight of w. % or less. The inclusion of such Al, Fe, and Co increases the solid solution range of the Ni phase, and the Ni phase is stable and stably forms a dense non-dynamic film. The intermediate layer contains W, Ta, Nb, and strontium. Or two kinds of enamels, and the total content of such W, Ta, Nb, and Ti may be 6 重量 or less. The inclusion of such W, Ta, Nb, and Ti forms a dense impermeable film 'can prevent 鍅 from occurring. Pitting, to improve the reliability of the flexible sound board. Further, the middle layer may also contain Ni, Cr, and other oxidizable elements other than -Γ^ ^ ^ ^ ^ ^ ^ ^ ^ # ^ ^ * tifp is preferably 2% by weight or less. In addition, when the inter-sheet layer contains a plurality of easily oxidizable elements, among the most oxidizable elements, the concentration of the base film side in the lamination direction of the intermediate layer is set to be higher. Yes, and > The upper case is equipped with a base leather bar and a low-density leather bar to ίί/ into the middle layer shape' It is not limited to this. As shown in Fig. 4, it can also be combined with & 1 base filament and 2 or more low-concentration (four) sub-forms to form the middle 320147 15 200844245 谛 layer. Also, in the middle of the laminated layer In addition to the sputtering method, a dry film forming technique such as an appropriate ion plating method may be used. In the eighth reading, the intermediate layer structure is described as the μ layer of the second drawing, which is continuously changed, but is not limited thereto. Γ Image: The concentration is discontinuous. Figure 6 shows the composition of Mo. 2. It can also be used to form a circuit diagram*, but is not limited to this. y is formed on the surface of the substrate (4) by an intermediate layer and a conductive layer to form a circuit pattern, and the flexible (four) plate (four) is formed. The flexible circuit board can also be configured as a Db, a flexible circuit board, or the like. Further, it is explained that an intermediate layer is formed on one surface of the base film and electrically conductive to form an intermediate layer on both sides of the intermediate layer. [Embodiment] The following examples are used to demonstrate the effects of the present invention. As shown in Fig. 3, the base film is transported by the transport roller, and the south and the second and the second are placed facing the surface of the base film: continuous sputtering is performed to form the intermediate layer. 1 target and second target two materials and transport direction length. It is formed on the intermediate layer (Examples 1 to 5). The 彳 溥 溥 溥 溥 使用 使用 使用 Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up Up ). 320147 16 200844245 The first target is MAT21 (Ni_i9 wt%, Mo-19 wt%, Cr 2 wt% Ta alloy) manufactured by Mitsubishi Materials Corporation, and its transport direction length is 1 cm. The second target is free from oxidation. See the element _2 〇 weight % q alloy. When the length of the first target in the transport direction is set to 丨, the length of the second target in the direction of the transport is 12, 9, 4, 1, 〇, 1. (Example 6) The base film was used as in Examples 1 to 5. The first dry type is a product name MA22 (Ni-l3 heavy 00/〇' Mo-22% by weight, Cr_4% by weight, Fe-3% by weight w alloy) manufactured by Mitsubishi Materials Corporation, and its transport direction length is 1 〇 second. The dry is a weight-free alloy that does not contain oxidizable elements. The transport length was 1 〇 (Example 7) The base film was used as in Examples 1 to 6. The first stem was a brand name MC alloy (NM weight 1/2, Mo-45 weight%, cr alloy) manufactured by Mitsubishi Materials Corporation, and its transport direction length was 1. The second stem is a Ni-20 weight alloy containing no oxidizable elements. Its conveying direction length is 丨. (Comparative Examples 1 to 5) The base film was used as in Examples 1 to 7. The first stem is a -20 wt% Cr alloy containing no oxidizable element, and the transport direction length is 12, 9, 4, 1, 0.1 〇 320147 17 200844245 when the length in the second transport direction described later is 丨. The target of the 2nd is MAT21 (Ni; 19% by weight of ' MQ; 19% by weight, G; 2% by weight of Ta alloy) manufactured by Mitsubishi Materials Corporation, and its transport direction length is 1. Coming soon! The intermediate layer formed by the opposite arrangement of the fifth and second stems. (Comparative Example) The base film was used as in Examples 丨 to 7. In the first gram, a Ni 2 〇 weight % Cr alloy containing no oxidizable element is used. Its conveying direction length is 1. The second leather bar was manufactured by Mitsubishi Materials Corporation under the trade name MA22 (Ni_13 weight I%' Mo-22% by weight, Cr_4% by weight, Fe-3% by weight w alloy), and its transport direction length was 1. 'that is, the sixth embodiment! The target and the second target are arranged in opposite directions to form an intermediate layer. (Comparative Example 7) The base film was used as in Examples 1 to 7. The first stem is a Ni-20 weight alloy containing no oxidizable element. Its delivery length is 1. The target of 曰苐2 was a brand name MC alloy (Ni-1 weight/〇, M〇_45 wt% Cr alloy) manufactured by Mitsubishi Materials, Inc., and its transport direction length was 1.
即’將實施例7之第丨靶子與第2靶子以相反配置而 形成中間層D (比較例8) 基底缚膜是使用如同實施例1至7。 18 320147 200844245 第1 #巴子是使用不含易氧化元素之Ni ; 2〇重量％Cr 合金，其輸送方向長度為〗。又，不配置第2靶子，僅由 第1 T巴子幵y成中間層。即，比較例8，係中間層完全不含 易氧化元素。 (成分分析） 、對於此等撓性積層板之評定，僅將中間層作氧氣溶解 以ICP(電感輕合電漿；inducti吻c〇upled pi_a)分析進 行成分分析。由此測量中間層整體之Ni、Cr、Mo之濃度， 測量結果如表1。 (積層方向之濃度分析） 於貫施例2及比較例1之撓性積層板，以俄歇(AUger) :子=光分析法測量積層方向之Ni、、施、a、c之 辰，刀析刀析條件為電子餘之加速電麼介V，照射電流 二’ t子餘之加速電壓5〇〇V，間隔時間__5分、2 H “b *等俄歇私子分光分析結果如第7圖(實施例2)及第8 圖（比較例1)。 (比較實驗） 产ι〇!τίΓ1至7及比較例1至8之撓性積層板裁出寬 【印：Γ:1 二麵之長方形狀試樣片，依1 間層之劍1、格職規格）方㈣量基底薄膜與中 底i膜制=度。此，収法係將上述長方形狀試樣片之基 徑6英对圓筒之外周向周方向黏合固定， 面拉開，測量所需之負重。 I底雜―面剝離一 320147 19 200844245 又’對各試樣片進行耐熱測試（i 5〇〇c，1 68小時），隨 後就此撓性積層板進行如同上述之結合強度測試，得以測 量耐熱測試後之結合強度（高溫剝離強度）。 如是’比較常溫剝離強度人與高溫剝離強度B，由下 式（1)算出剝離強度保持率c。 C = (A—B)/AxlOO ···〇) 此比較實驗之結果亦在表1。Namely, the intermediate layer D was formed by arranging the second target of Example 7 in the opposite direction to that of the second target (Comparative Example 8). The base film was used as in Examples 1 to 7. 18 320147 200844245 The first #巴子 is a Ni-free, non-oxidizing element; 2% by weight of Cr alloy, the length of the conveying direction is 〖. Further, the second target is not disposed, and only the first T bar is formed as an intermediate layer. Namely, in Comparative Example 8, the intermediate layer was completely free of oxidizable elements. (Component analysis) For the evaluation of these flexible laminates, only the intermediate layer was dissolved in oxygen and analyzed by ICP (inductive light plasma; inducti kiss c〇upled pi_a) for composition analysis. From this, the concentrations of Ni, Cr, and Mo in the entire intermediate layer were measured, and the measurement results are shown in Table 1. (concentration analysis of the lamination direction) In the flexible laminate of Example 2 and Comparative Example 1, the Ni, Shi, a, c, and the knives of the lamination direction were measured by Auger: sub = optical analysis. The conditions of the analysis of the knife are the acceleration of the electrons, the V, the accelerating voltage of the current of the two currents, 5 〇〇V, the interval __5 points, 2 H, "b *, etc. 7 (Example 2) and 8 (Comparative Example 1). (Comparative experiment) The flexible laminate produced by ι〇!τίΓ1 to 7 and Comparative Examples 1 to 8 was cut wide [Print: Γ: 1 The rectangular sample piece is made up of the base layer film and the midsole i film according to the sword of the first layer, and the base film is made of the midsole i film. The method of the method is to set the base diameter of the rectangular sample piece to 6 inches. Adhesively fixed to the circumferential direction of the cylinder, the surface is pulled apart, and the required load is measured. I. Miscellaneous-face peeling-320147 19 200844245 Also 'heat test for each sample piece (i 5〇〇c, 1 68 Hours), and then the flexible laminate was subjected to the bonding strength test as described above to measure the bonding strength (high-temperature peel strength) after the heat resistance test. Peel strength than ordinary temperature and the high temperature peel strength person B, retention ratio was calculated by the c release following formula (1) intensity. C = (A-B) / AxlOO ··· square) The results of this comparative experiment are also shown in Table 1.
320147 20 200844245 表i 強度 保持率 97% CD 94% 96% 94% CO cr» ca σ> 88% 89% 85% 89% C4 CO 86% co <〇 卜 T%溫剝離 強度(N/m) 503.0 507.0 487,0 503.0 491.0 512.0 489-0 451.0 461.0 474.0 462.0 460.0 469.0 462.0 401,0 常溫剝離 強度(N/m) 520.0 529.0 519.0 523.0 524.0 552.0 532.0 511·0 518.0 556.0 520.0 563.0 548.0 547.0 531.0 中間層全體的分析值 〇 σ> ο — ο ai 17.2 \r> CQ 寸· 〇> q 寸* ιο ai CSJ *τ— s 寸. ρ 〇 20.1 20.3 19.9 20.1 20.1 CM 31.8 20.0 20.3 19.2 19.9 20.3 21.3 32.2 20.1 乏 78-5 11Ά 76.1 70.9 62.7 72.4 67.8 78.6 77.8 76,8 70.6 62.5 72.3 67.4 79.9 第2靶子 紐 CM α> 寸 5 -IT— τ— τ— T— ! Ni-20Cr Ni-20Cr NhZQGr Ν 卜 20Gr Ni-20Cr Nh20Cr Ni-20Cr ΜΑΤ21 MAT21 MAT21 ΜΑΤ21 MAT21 MA22 Ο € 第1輕子 長度 τ—r τ—' «f—· τ— €SJ 〇> r— τ—; 1 MAT21 ΜΑΤ21 ΜΑΤ21 ΜΑΤ21 MAT21 MA22 ο 2 Nh20Cr NH20Cr Ni-20Cr Ni - 20Cr Ni - 20Gr Nr20Cr Nr20Cr N 卜 20Cr 實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 [j：匕較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 比較例8 (評定結果） 如第7圖所示之實施例2撓性積層板之俄歇電子分光 21 320147 200844245 it 分析結果，在基底薄膜（有c強度峯値部分）邊可看出Μ 之強度峯値，在導電層（有Cu強度峯値部分)邊可看出320147 20 200844245 Table i Strength retention rate 97% CD 94% 96% 94% CO cr» ca σ> 88% 89% 85% 89% C4 CO 86% co <〇布 T% warm peel strength (N/m) 503.0 507.0 487,0 503.0 491.0 512.0 489-0 451.0 461.0 474.0 462.0 460.0 469.0 462.0 401,0 Normal temperature peel strength (N/m) 520.0 529.0 519.0 523.0 524.0 552.0 532.0 511·0 518.0 556.0 520.0 563.0 548.0 547.0 531.0 Analysis value 〇σ> ο — ο ai 17.2 \r> CQ inch·〇> q inch* ιο ai CSJ *τ— s inch. ρ 〇20.1 20.3 19.9 20.1 20.1 CM 31.8 20.0 20.3 19.2 19.9 20.3 21.3 32.2 20.1 -5 11Ά 76.1 70.9 62.7 72.4 67.8 78.6 77.8 76,8 70.6 62.5 72.3 67.4 79.9 2nd target CM α> Inch 5 -IT— τ— τ— T— ! Ni-20Cr Ni-20Cr NhZQGr Ν Bu 20Gr Ni-20Cr Nh20Cr Ni-20Cr ΜΑΤ21 MAT21 MAT21 ΜΑΤ21 MAT21 MA22 Ο € 1st lepton length τ—r τ—' «f—· τ— €SJ 〇> r— τ—; 1 MAT21 ΜΑΤ21 ΜΑΤ21 ΜΑΤ21 MAT21 MA22 ο 2 Nh20Cr NH20Cr Ni-20Cr Ni - 20Cr Ni - 20Gr Nr20Cr Nr20Cr N Bu 20C r Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 [j: 匕 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8 (Assessment Result) Auger electron spectroscopy of the flexible laminate of Example 2 as shown in Fig. 7 320 147 200844245 It analysis results show that the intensity peak of Μ can be seen on the base film (having a c-peak peak portion) Can be seen in the conductive layer (with the peak of the Cu intensity)
Cr之強度峯値。由此可確認在中間層中基底薄膜邊之 ^ 濃度高。 ° 另一方面，如第8圖所示於比較例丨之撓性積層板之 俄歇電子分光分析結果，在基底薄膜（有c強度峯値部分 邊可有出Ni、Cr之強度峯値，在導電層（有Cu強度峯値呷 分）邊可看出Mo之強度峯値。由此可確認在中間層中 層邊之Mo濃度高。 ： 由此結果，可確認，為了積層中間層而變更第工靶子 與第2歡子之M。濃度，可控制中間層内部之m。濃度分 布0 又’於實施例Ϊ至7,剝離強度保持率為92至97%令 y.知，高溫環境下基底薄膜與中間層之結合強度降低门甚 二二較例1至… 至89义在不含Mo之比較例8則為76%。 此等比較測試結果可確認’依據本發明，即使在言 溫環境下使用亦可唯捭其處笔 阿 -J J雖知基底潯膜與中間層間之結合強产， 而能提供向可靠性之撓性積層板。 又 【圖式簡單說明】 』 本發明實施形態之撓性積層板的剖面圖。 分布圖。…兄明弟1圖所示捷性積層板之中間層的濃度 第3圖係、本發明實施形態之撓性積層板的製造方法說 320147 22 200844245 明圖。 第4圖係本發明實施形芦 法之說_。 ㈣層板的其他製造方 第5圖係本發明之其他實施形態之捷性積 層中之濃度分布說明圖。 、S $中間 声中發明之其他實施形態之撓性積層板的中間 玲中之》辰度分布成明圖。 鲁 帛7圖表示實施例2之撓性積層板之俄歇(A寧)電子 匀光分析結果圖。 第8圖表示比較例i之撓性積層板之俄歇（Au㈣ 分光分析結果圖。 主要元件符號說明】 基底薄膜 2 中間層 導電層 10 ’輸送輥 基底1巴子 12 低濃度輕子 320147 23The intensity peak of Cr is 値. From this, it was confirmed that the concentration of the base film side in the intermediate layer was high. ° On the other hand, as shown in Fig. 8, the Auger electron spectroscopy analysis of the flexible laminate in the comparative example shows that the base film (the intensity peak of Ni and Cr may be present on the base film). In the conductive layer (having a peak of the Cu intensity peak), the intensity peak of Mo was observed. It was confirmed that the Mo concentration in the interlayer in the intermediate layer was high. From this result, it was confirmed that the interlayer was changed in order to laminate the intermediate layer. The concentration of the first target and the second Huanzi. The concentration can control the m inside the middle layer. The concentration distribution 0 is also 'in the example Ϊ to 7, the peel strength retention rate is 92 to 97%. y. Know, under high temperature environment The bonding strength between the base film and the intermediate layer is lowered. The ratio of the door to the second is higher than that of the case of Example No. 1 to 89. In Comparative Example 8 containing no Mo, it is 76%. The results of these comparative tests can confirm that, according to the present invention, even in the case of the temperature The use of the environment can also be used only in the case of A-JJ, although it is known that the combination of the base film and the intermediate layer is strong, and can provide a flexible laminated board with reliability. [Illustration of the drawing] Sectional view of the flexible laminate. Distribution map.... brother Mingdi 1 shown The concentration of the intermediate layer of the laminated board is shown in Fig. 3, and the manufacturing method of the flexible laminated board according to the embodiment of the present invention is 320147 22 200844245. The fourth drawing is the embodiment of the present invention. (4) Others of the laminate Fig. 5 is a diagram showing the concentration distribution in the agglomerated laminate of another embodiment of the present invention. In the middle of the flexible laminated board of the other embodiment of the invention of S $ intermediate sound, the distribution of the density is defined. Fig. 7 shows the results of Auchen electron homogenization analysis of the flexible laminate of Example 2. Fig. 8 shows the results of Au (four) spectroscopic analysis of the flexible laminate of Comparative Example i. Explanation of main component symbols] Base film 2 Intermediate layer conductive layer 10 'Conveying roller base 1Bag 12 Low concentration lepton 320147 23