TW200843142A - Luminescence device and manufacturing method of the same - Google Patents

Luminescence device and manufacturing method of the same Download PDF

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Publication number
TW200843142A
TW200843142A TW096121466A TW96121466A TW200843142A TW 200843142 A TW200843142 A TW 200843142A TW 096121466 A TW096121466 A TW 096121466A TW 96121466 A TW96121466 A TW 96121466A TW 200843142 A TW200843142 A TW 200843142A
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Taiwan
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light
electrode
conductive
layer
hole
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TW096121466A
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Chinese (zh)
Inventor
Goro Narita
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Element Denshi Co Ltd
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Publication of TW200843142A publication Critical patent/TW200843142A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48237—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

It is an object to provide a luminescence device and a manufacturing method of the same, intending to solve the problems that luminescence device has a limitation in thinning because of the structure that luminescence element is laminated onto base substrate in the conventional luminescence device. The luminescence device of the present invention is constituted by a first conductive foil disposed in one main surface of an isolation substrate, a second conductive foil disposed in the other main surface, a penetration hole for holding element which penetrates the isolation substrate, a luminescence element, an adherence electrode formed by the second conductive foil to cover the penetration hole for holding an element, a taking out electrode constituted by the first conductive foil (11), a metal thread which connects the first electrode of the luminescence element and the taking out electrode, and a transparent resin, wherein the luminescence element is disposed within the penetration hole for holding element, and the luminescence of the luminescence element (31) is reflected by a conductive metal layer arranged in the decline surface of the penetration hole for holding element. The luminescence device can be thinned because the luminescence element is arranged in the area in which the isolation substrate does not exist and the strength as a holding member can be secured by laminating a conductive metal layer to the adherence electrode.

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200843142 九、發明說明： 【發明所屬之技術領域】 本發明係關於—種組人於雙㈣附導電箱之絕緣基板 的薄型發光裝置及其製造方法。 【先前技街】 第7圖係顯示防止從發光元件所發出的光被吸收至基 ^基板内’且抑制發光損失以謀求全體亮度之提高的發光 衣置。 該發光裝置之構成包含發光元件⑽、基底基板細、 基板電極部300、連接電極部·、光反射部5〇〇、孔部_ 及=鍍層700。發光元件⑽係三族氮化物系化合物半導 體發光元件。基底基板2〇〇係由聚酿亞胺、玻璃環氧或是 BT樹脂等之樹脂所形成的絕緣性基板，其係以由從該表面 形成至月面之銅癌膜所構成的一對基板電極部3⑽、由形 成於么光元件100之載置面之相反側的面之銅箱膜所構成 的光反射部500、將一對基板電極部3〇〇所相對向之絕緣 部開設於基底基板200之厚度方向的孔部_、及由形成 於攸該孔部600露出之光反射部5〇〇的露出面與孔部咖 之内周面的金或銀所成的電鑛層700來製作。又，設於基 底基板200之背面，且由與基板電極部300導通之導電膜 所構成的電極’係安裝在母板等之裝置基板的連接電極部 4 0 〇 〇 (專利文獻1)日本專利特開2005 —1 75387號公 【發明内容】 319288 6 200843142 -(發明所欲解決之問題） 在上面所述的發光裝置中，有如以下的問題點。 例如可攜式終端機器等已發展成小型化、薄 發光裝置之薄型化已為市場所要求。 ，且 100西，二广7圖所示之發光裝置’由於係、為發光元件 -在基底基板200上的構造，所以安裝後之 四 少亦需要發光元件⑽之厚度與基底基板2^厚度= ::上。雖然有進行基底基板200之材料改良等而在薄； '产之：：有：Ϊ展，但是作為支撐材料有需要確保某種程 當考量製造步驟中之處理容易度等時，則在如 壬又^上之大幅薄型化方面就會有界限。 (解決問題之手段） 備如ΐ::係有鑒於此種問題點而研創者，第卜藉由具 ΠΤ解決··第1導編第2導電箱，設在絕緣 基板之兩主面；元件載置用言 固执M 貝牙孔’貫穿上述絕緣基板； 口5又电極，由復盍上述貫穿孔之底面 形成；發光元件，固設在上、十w h電泊所 來貫穿孔;及取出電極，利用金屬心 = 導電膜所形成的上述發光元件之第1電極 貫穿孔，：2?疋件係將大部分埋設在上述元件载置用 貝牙孔，且使其上面比上述絕緣基板表面高。 述固：電=發Γ件t利用導電糊或非導電糊固設在上 上述备光7〇件之第2電極係與由上述第 319288 7 200843142 2導電箔所形成的背面安裝電極電連接。 一又，上述第1及第2導電膜係由銅所構成，在上述固 口又私極豐層有鍍鎳層、及鍍金或鍍銀層，利用上述鍍鎳層 來提高上述固設電極之硬度。 又，在上述兀件載置用貫穿孔之内壁設有穿孔電鍍 層’在該穿孔電㈣上亦疊層有上料鎳層、及上述鏡金 或銀層。 又，上述固設電極係與上述取出電極及上述背面安裝 電極形成一體用以傳遞來自上述發光元件之發熱。 、又，上述穿孔電鍍層上之上述鐘金或鍍銀層係共用作 為上述發光元件之反射器。 藉由具備如下步驟而解決：準備在 弟 干丨甸隹陶主面貼附 有弟1導電荡及第2導電箱之絕緣基板的步驟；選擇性去 =形成預^之元件载置用貫穿孔的區域之上述第ι導電 將上述絕緣基板露出的步驟；選擇性乾钱刻上述二緣 j，以形成上述元件载置用貫穿孔，且檢測上述 电洎之背面並停止乾钱刻，在上述元件載置用 底 :露出有上述第2導電笛之背側的固設電極的步：底 ,牙孔電鑛在上述第1導電荡及第2導電箱、上 载置用貫穿孔之内壁形成穿孔電鑛層的步驟；將上 I電:及I2:遍刻成所期望之形狀以形成取： °月面女I電極的步驟；在上述取出電極、背面帝 返、上述元件載置用貫穿孔之内壁的穿孔電錢声 ^ 設電極疊層形成鍍鎳層及鍍金或鍍銀層的步驟：在上= 319288 200843142 貫穿孔之底面的上述固設電極上固設發光元件的 =利用金屬細線來連接上述發光元件之第！電極:: 2::電極的步驟；利用透明樹脂來被覆上述發光元； 上述金屬細線的步驟·及依夂 光裝置的步驟。i依各早相)分割成個別之發 又，上述乾蝕刻係利用雷射蝕刻來進行。 後形成上述穿孔電鍍層。 用貝牙孔内之蝕刻渣之 所構^其特徵ί ’上述第1導電蕩及第2導電落係由銅 ，而上述穿孔層亦由鍍銅所形成。 列呈徵為’各單元係形成狹長方形，且複數個排 (發明效果） 依據本發明，可獲得如下效果。 板之第二藉由在貫穿作為發光裝置之支撐材料的絕緣基 裝S i貫穿孔埋設安裝發光元件，即可達成發光 件的安在支擇材料(基底基板)上疊層發光元 上，且要發光元件與支撐材料之總厚度以 上，且热法使發光裝置之 發明之構造，則由於發光元件可=二在:是依據本 的固設電極上，所，㈣如二 === 及支絕緣基板），亦可謀求發光裝置之薄型化。 弟2、由於發光元件之大部分被埋設在元件載置用貫 319288 200843142 =率St面配置成比絕緣基板表面高，所以可防止發 外部f件完全埋設在元件載置用貫穿孔時’就有朝 X 〃效率劣化之虞。又，由於發光元件係依其尺寸 媒旱生度士)而改變所發光的角度，所以當大幅變更發光元件之 k日守就有發光之特性發生變化之虞。 ί ，是依據本實施方式，則在發光元件之載置區域上並 =有絕緣基板’亦即可,t、略以往受到限制之絕緣 7厚度。因而，可使用與以往同樣的發光元件，而不合使 或發光之特性發生變化’且可容易謀求發光 於番發光元件係利用導電糊或非導電糊固設在被設 ===穿孔之底部的固設電極上，而發光元件之 … 設電極，或是介由金屬細線，來與由第 所形成的背面㈣電極進行電連接 $ 絕緣基板背面之第2導電箔 9在° 又於 之大幅薄型化。 u上件即可實現裝置 所以^、^設電極係疊層有_層^金或鐘銀層， 所以可一面形成在由不存为 雪噹）所搂士认门 在有七、，康基板之導電箔（第2導 第ΓΛΤ乍為發光元件之载置區域的強度。 弟5、猎由在兀件载置用貫穿孔辟田 鍍層、制層與鍍金或梦聲芦、目！p 豐層有穿孔電 又王及鍍銀層，則即使其為 用貫穿孔來將絕緣基板完全卩帛胃自 王“隹的構造’亦可利用硬度高 319288 10 200843142 -之鍍鎳層來確保作為發光元件之支撐材料的強度。 第6、由於固設電極係與取出電極及背面安裝電極形 成-體，所以可將來自發光元件之發熱，介由分別直接連 接的固設電極及取出電極傳遞至背面安裝電極。 第7、由於設在元件载置用貫穿孔内壁之穿孔電鐘層 上士的鍍金或鐘銀層，係與發光元件之侧面相對向，所以可 將5亥等共用作為發光元件之反射器。 絕緣Si發製造方法，第提供-種藉由在貫穿 貫穿孔的内部埋設配置發光元件來 孔：i置Γ缚型化的製造方法。又，藉由在元件載置 二 的終點檢測利用第2導電笛之背面，即 可使=又=形成預定深度之元件载置用貫穿孔，同時 使叙先70件所連接的固設電極露出。 又，可利用在取出電極、昔 貫穿孔之内壁的穿孔電鍍層 衣笔極、元件載置用 及鑛金或鑛銀層的步驟，以_步:=用疊層形成鑛鎳層 緣基板之固設電極部分的強度保不存在絕 之電鑛層的形成、及發光元件之反=形成、與搭接用 製造步驟。 射°。的形成，且可簡化 再者，由於可使發光元件之取 ^ 背成大致同等之高度，所以可电° 、及弟1電極排 第2、藉由利用雷射蝕刻於易進仃金屬細線之搭接。 穿孔之乾钱刻，即可在 &用以形成元件載置用貫 測出—b又，由於可:之背面檢 戰置用貝牙孔内壁之 319288 11 200843142 傾斜角形成若干研鉢狀，所以可活 係為研鉢狀，所以發光元… …反射器。又由於 M Q 女衣亦變得容易。 、 >成牙孔電鍍層之步驟中，葬 渣處理去除元件載置用貫穿 '猎由在利用除膠 鍍層，即可提高穿孔電鍍層之密接：刻渣之後形成穿孔電 穿孔Ϊ二::tl導電箱及第2導_由銅所構成， 鎳層及鍍金或鍍銀層，亦可在 牛之上的鍍 的厚度。 τ了在電解電鍍層將各個形成均等 置多數個…㈣ 方形之單元群並排列配 置夕數们^了列狀，即可大量製造發光裝置，而且 要的反射n亦可製作在元件載置用貫穿孔内。 【實施方式】 麥照第1至6圖，說明本發明之實施方式。 瓦先，第1圖係顯示本發明之發光裝置。第1(A)圖為 (其上視圖；第1(β)圖為第UA)圖之a-a線剖面圖。 ^ ^二施形態之發光裝置，其構成包含··絕緣基板10、 第2導電箔η、第2導電箔ϊ2、元件載置用貫穿孔25、 口叹電極12a、發光元件31、金屬細線3〇及取出電極1 la。 絕緣基板10係當作第1及第2導電箔Π、12之支撐 基板來使用’為由FR4(環氧化物（epoxide)織造玻璃布）、 月日（Bismaieifflide Triazine Resin)所構成的基板、 玻璃環氧（gloss —epoxy)基板、玻璃聚醯亞胺基板等。本實 施方式中例如係使用由BT樹脂所構成的基板。絕緣基板 12 319288 200843142 之厚度11係例如為6 〇 # m左右。 面以2 —導电泊11及第2導電箔12係在絕緣基板1 0之雙 面=劑壓接而貼附。作為…導電箱U及第2帽 銅㈣Γ可钱刻的金屬即可。本實施方式中，係採用由 面右卢“的金屬落。該等係構成配線之一部分，又雖於後 撐材料f述’但是第2導電们2係構成發光元件31之支 '之主兄’該等之膜厚係選擇作為配線及發光元件31 路元件的電““立 厚度，可依被安裝之電 導電结19 ^谷里寻而任思決定。第1導電箔11與第2 、，之膜厚係為同等，例如為9/zm至35/zm。 近貫；=用貫穿孔25係在絕緣基板10之大致中央附 二 = 而設置。元件载置用貫穿孔25可利用 實施方心例如’係利用雷射所形成 2 s。換^ _：其侧面成為R乾㈣法所形成的平坦傾斜面 且足夠的大小，且可達成發光裝置 =置5。之絕緣基板1Q，係可依元件載置用；成- 而元全分割成複數個。 牙孔“ 二載置用貫穿孔25之大小係形成比被 讀Μ大的正方形、圓形、橢圓形、或 =先 例如，元件载置用貫穿孔2 , ^ ’ 、/狀。 徑為〇.3_，下面開口之直徑^ ^狀’係上面開口之直 π 且仅馬〇· 之研銖狀，古洚达 °.1·。元件載置用貫穿孔25之傾斜面26的傾斜角;為為 319288 13 200843142 _ 125 度。 第2二電:广係由覆蓋元件載置用貫穿孔25之底面的 弟2 * $泊12所形成。亦即，元件載置 從絕緣基板10之—主而不斤 係以 10,而第2導電$ 12< t )側貫穿絕緣基板 、白12之月面（絕緣基板10側）則露出的方 ^置。然後殘存的第2導W為固設電極12a^ 復盍兀件载置用貫穿孔25之底面。 , 上光兀件31係為二族氮化物系化合物半導體(例如， 、；：=Ν))之發光元件，在元件之表面設有第！電極34 電極35。發光元件31之形狀，係底面為0. 15_四 ，问度為60"至10〇//m。在此例如係使用高度為⑽ Γ之發光元件31。發光元件31係以埋設在元件載置用貫 ^ = 5的f式而配置’且用接著劑33固設在從元件载置 5 Π 的固設電極…上。另外，雖於後面有敘 y旦疋發光几件31實際所固設者，係為疊層在固設電極 L 12a上的導電性金屬層23(23幻。 接著劑33係為例如非導電糊或銀（Ag)等之導電糊。 發光元件31亦可在固設電極12a上施予鑛金（Au),且 由Au共晶來固設。 卷光兀件31係將大部分埋設在元件載置用貫穿孔 25 ’其上面比絕緣基板1G表面（一主面）突出若干。發光元 i f於係配置在由絕緣基板1G之背面（另—主面）的第2 導電荡12所構成的固設電極⑸上，所以可達成發光裝置 之大幅薄型化。又，本實施方式中，發光元件31之上面係 319288 14 200843142 ，從絕緣基板ίο突出若干，而$ ^ 2 W ^ ^ ΑΛ jl 口又；上面之第1電極乃楚 电極35)的打線接合作業亦可容易進行。 （及弟 之形=ria係藉由將第1導電心圖案化為所” 之开4而形成，且以發光元件 巧m 線30來連接。 之罘1电極34與金屬細 背面安裝電極12b係藉由將第 期望之形狀而形成，且與發光元 二=為所 接。 <昂Z電極35電連 發光το件31之第2電極35,係盘第 言^發光元件31之上面（參照第⑽圖）二=入同，地 線3士 〇來與作為背面安裝電極m之第2導電们細 此k，發光7L件31係利用非導電糊固設在妾。 電性金屬層23d)。 口叹-电極12a(導 又圖示雖省略，但是第2電極35亦可士 # 3 4相對向的發光元件3 i之背面元件'電極 料電糊固設在固設電極崎電性金屬層 == 者固叹電極12a來與背面安裝電極⑽相連接。且，| 又，在元件載置用貫穿孔25之 電錢所形成的穿職層13。穿孔電 :;為:第， "罘2 V電箔12(固設電極12a)表面。換 」 ㈣貫穿孔25之内壁雖然只有形成穿孔電链層：二牛 疋在除此以外之區域，穿孔電鍍層13係盥 - 及第2導電箔12(：固机恭朽19、 ^ 1 ^ 11 白12(固汉屯極12a)—體化，而連接該等元件。 319288 15 200843142 導電性金屬層23係為可搭接且硬度高的多層金屬 層。在此，例如為鎳（Ni)-金（Au)層或Ni-Ag。又，亦可為 使用鈀（Pd)等之Ni-Pd層或Ag-Pd層。Ni層係為硬度高的 金屬層，Au層或Ag層可進行與金屬細線3〇之搭接。又在 使用鎳（Ni)-金（Au)層時，如上面所述，可利用-共晶來 固設發光元件3卜另外，在使之共晶時，係另外進行如 電鍍。 導電性金屬層23(例如厚度33//m)，係利用 而豐層在第1導電箱1卜第2導如2及穿孔電鑛層13 亦P在取出电極lla、穿孔電錢層及背面安裝電 極12b之上方，分別設有導電性金屬層心、、既， 而，固叹電極12a之上方（雙面）亦設有導電性金 23d 、 23e 。 導=金屬修係利用金屬細線3〇來與發光元件 二弟“極34電連接，且與取出電極山(第i ，、同形成發光元件31之陽極側的 屬層23c、23d'23e係與第i 又生金 及背面客壯干 ¥电泊n(或固設電極12a)、 之陰極側的電極。 ％自12)共_成發光元件31 取出電極Ha與背面安裝雷士 28、28,來隔離γ ps 97 D 12b，係利用隔離溝27、 木一離，在隔離溝27、2S、9S，咖辦 金屬層23。 8 28内壁亦設有導電性 透明樹脂32係覆蓋全體，且在 屬細線30之同時#作發光元 保^光元件3!及金 汁W之透鏡來使用。 319288 16 200843142 . 又，在絕緣基板1G之另-主面（背面）側，設有樹㈣ (阻焊（soHer resist)層）38。阻焊層如係從背面: ，上之導電性金屬層23c連續覆蓋至隔離溝2δ，：： 口又在絕緣基板1 〇之背面側的隔離溝28、28,内。 在安裝本實施形態之發光裝置50時’露出於阻焊芦 38兩侧的導電性金屬|23可利用焊錫等固設在安裝基二。 可利用阻焊層38來防止陽極側與陰極側之短路 吸收隔離溝28、28,部分之高低差。 ( 其次，帛2圖係顯示本發明之個別的單元（〇611)。笛 2(A)圖為其上視圖；第2(Β)圖為其仰視圖。 基板1〇之上面一體貼附有第1導電箱 二：在下面一體貼附有第2導電箱12。第2圖中，圖示BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-type light-emitting device of a group of people in an insulating substrate with a conductive box of a double (four) and a method of manufacturing the same. [Prior Art Street] Fig. 7 shows a luminescent device that prevents light emitted from the light-emitting element from being absorbed into the substrate, and suppresses luminescence loss to improve overall brightness. The light-emitting device includes a light-emitting element (10), a base substrate, a substrate electrode portion 300, a connection electrode portion, a light reflection portion 5A, a hole portion_, and a plating layer 700. The light-emitting element (10) is a group III nitride-based compound semiconductor light-emitting device. The base substrate 2 is an insulating substrate made of a resin such as polyacrylonitrile, glass epoxy or BT resin, and is a pair of substrates composed of a copper cancer film formed from the surface to the lunar surface. The electrode portion 3 (10), the light reflecting portion 500 formed of a copper box film formed on the surface opposite to the mounting surface of the optical element 100, and the insulating portion facing the pair of substrate electrode portions 3 are formed on the substrate The hole portion _ in the thickness direction of the substrate 200 and the electric ore layer 700 formed of gold or silver formed on the exposed surface of the light reflecting portion 5 露出 exposed on the hole portion 600 and the inner peripheral surface of the hole portion Production. In addition, the electrode which is formed on the back surface of the base substrate 200 and which is formed of a conductive film that is electrically connected to the substrate electrode portion 300 is attached to the connection electrode portion of the device substrate such as a mother board (Patent Document 1). Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. For example, portable terminal devices and the like have been developed to be miniaturized, and thinner devices for thin light-emitting devices have been required by the market. And the light-emitting device shown in the figure 100, the second and the second is the structure of the light-emitting element on the base substrate 200, so the thickness of the light-emitting element (10) and the thickness of the base substrate 2^ are also required after installation. ::on. Although there is a material improvement in the base substrate 200, etc., it is thin; 'Production:: There is a development, but as a support material, it is necessary to ensure a certain process when considering the ease of handling in the manufacturing steps, etc. There will be limits on the large-scale thinning. (Means for Solving the Problem) Prepared as: 系 有 有 研 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : Mounting words are used to hold the M-holes through the insulating substrate; the ports 5 and the electrodes are formed by the bottom surface of the through-holes; the light-emitting elements are fixed on the upper, ten wh electroporation through-holes; The electrode is a first electrode through hole of the light-emitting element formed by a metal core = a conductive film, and the second electrode is embedded in the element hole for the element mounting, and the upper surface thereof is larger than the surface of the insulating substrate. high. The second electrode of the above-mentioned standby light 7 is electrically connected to the back surface mounting electrode formed of the conductive foil of the above-mentioned 319288 7 200843142 2 by the conductive paste or the non-conductive paste. Further, the first and second conductive films are made of copper, and a nickel-plated layer and a gold-plated or silver-plated layer are formed on the fixed and private layers, and the fixed electrode is improved by the nickel plating layer. hardness. Further, a perforated plating layer is provided on the inner wall of the through hole for the element mounting. The upper layer of nickel and the mirror gold or silver layer are laminated on the perforated electric (four). Further, the fixed electrode is integrally formed with the extraction electrode and the back surface mounting electrode to transmit heat from the light emitting element. Further, the above-mentioned gold or silver plating layer on the above-mentioned perforated plating layer is used as a reflector for the above-mentioned light-emitting element. It is solved by the following steps: a step of attaching an insulating substrate of the first conductor and the second conductive box to the main surface of the caddy of the dynasty dynasty; and selectively forming a through hole for the component mounting a step of exposing the insulating substrate to the first conductive layer; and selectively etching the two edges j to form the through hole for the component mounting, and detecting the back surface of the electrical device and stopping the dry etching, The component mounting bottom: a step of exposing the fixed electrode on the back side of the second conductive flute: the bottom, the perforated electric ore is perforated in the inner wall of the first conductive swash and the second conductive case and the mounting through hole a step of electro-minening layer; a step of engraving the upper electrode: and I2: forming a desired shape to form: a female electrode of the moon surface; and a through-hole for removing the electrode, the back surface, and the component mounting The perforated electric money sound of the inner wall is formed by the electrode stack forming a nickel plating layer and the gold plating or the silver plating layer: the light-emitting element is fixed on the above-mentioned fixed electrode of the bottom surface of the through hole 319288 200843142 = the thin metal wire is used Connect the above-mentioned light-emitting components! Electrode:: 2:: electrode step; coating the above-mentioned illuminating element with a transparent resin; the step of the above-mentioned metal thin wire and the step of the illuminating device. i is divided into individual hairs according to each early phase. The dry etching is performed by laser etching. The above-mentioned perforated plating layer is then formed. The structure of the etching slag in the bead hole is characterized by the fact that the first conductive and second conductive holes are made of copper, and the perforated layer is also formed by copper plating. The column is characterized in that each unit is formed into a narrow rectangular shape and a plurality of rows are formed. (Effect of the invention) According to the present invention, the following effects can be obtained. The second of the board is formed by embedding and mounting the light-emitting element through the insulating base S i through the hole as the supporting material of the light-emitting device, so that the light-emitting element can be laminated on the light-emitting element (base substrate), and Where the total thickness of the light-emitting element and the support material is greater than or equal to the total thickness of the support material, and the structure of the invention of the light-emitting device is thermally enabled, since the light-emitting element can be used in accordance with the present invention, (4) such as two === and Insulating substrate) can also reduce the thickness of the light-emitting device. Second, since most of the light-emitting elements are embedded in the component placement 319288 200843142 = the rate St surface is arranged higher than the surface of the insulating substrate, so that it is possible to prevent the external f-piece from being completely buried in the component-mounting through-holes. There is a tendency to deteriorate toward X 〃 efficiency. Further, since the light-emitting element changes the angle of light emission depending on the size of the medium, the characteristics of the light-emitting element change when the light-emitting element is largely changed. According to the present embodiment, in the case where the light-emitting element is placed on the surface of the light-emitting element, the thickness of the insulating layer 7 may be limited. Therefore, it is possible to use the same light-emitting element as in the related art, and it is not possible to change the characteristics of the light-emitting or not, and it is easy to achieve light-emitting. The light-emitting element is fixed to the bottom of the hole by the conductive paste or the non-conductive paste. The electrode is fixed, and the light-emitting element is provided with an electrode or a metal thin wire to electrically connect the first (four) electrode formed by the first electrode. The second conductive foil 9 on the back surface of the insulating substrate is substantially thinner. Chemical. u The upper part can realize the device. Therefore, the electrode system is laminated with _ layer ^ gold or silver layer, so it can be formed on the side of the door that is not stored as snow.) The conductive foil (the second guide ΓΛΤ乍 is the intensity of the mounting area of the light-emitting element. The younger one, the hunting is made by the through-holes for the mounting of the element, the layering and the gold plating or the dream sound reed, the eye! p The perforated electric and the silver-plated layer can be used as a light-emitting element even if it is a through-hole to completely smear the insulating substrate from the "structure of the crucible" by using a nickel plating layer having a high hardness of 319288 10 200843142 - The strength of the support material. In the sixth aspect, since the fixed electrode system and the extraction electrode and the back surface mounting electrode form a body, heat generated from the light-emitting element can be transmitted to the back-mounted electrode via the fixed electrode and the extraction electrode that are directly connected to each other. 7. The gold-plated or silver-plated layer of the perforated electric clock layer provided on the inner wall of the component mounting through-hole is opposed to the side surface of the light-emitting element, so that 5 hai or the like can be shared as a reflector of the light-emitting element. Insulated Si hair manufacturer Provided by the method of arranging a light-emitting element in a state in which a light-emitting element is embedded in a through-hole, a method of manufacturing a hole is formed, and a back surface of the second conductive flute is detected by detecting an end point of the component mounting second. Then, it is possible to form a through hole for component mounting at a predetermined depth, and expose the fixed electrode to which 70 pieces are connected. Further, a perforated plating pen can be used for taking out the electrode and the inner wall of the through hole. Steps for poles, component placement, and gold or silver ore layers, in the step of _: = the strength of the fixed electrode portion of the substrate formed by the lamination of the ore-nickel layer, and the formation of the electroless ore layer and the luminescence The reverse of the element = the manufacturing step of forming and lapping. The formation of the radiation is simplified, and the light-emitting element can be made to have a substantially equal height, so that the electrode can be electrically and Second, by using laser etching on the easy-joining metal thin wire overlap. The perforation of the dry money can be used in the & used to form the component placement test -b, because: can be: back inspection The inner wall of the shell is made of 319288 11 200843142 There are a number of mortars, so it can be made into a mortar shape, so the illuminating element...the reflector is also easy to make due to the MQ women's clothing. > In the step of forming the dental hole plating layer, the scumming treatment removes the component. The use of the through-hunting can improve the adhesion of the perforated plating layer by using the de-coated coating: after the slag is formed, the perforated electroporation is formed. :2:: tl conductive box and the second guide _ consists of copper, nickel layer and gold plating or The silver-plated layer can also be plated on the cow. The thickness of the plating is set on the electroplated layer. (4) The square cell group is arranged and arranged in a row. The apparatus and the required reflection n can also be formed in the through hole for component placement. [Embodiment] An embodiment of the present invention will be described with reference to Figs. Watson, Fig. 1 shows a light-emitting device of the present invention. Fig. 1(A) is a cross-sectional view taken along line a-a of the figure (the upper view; the first (β) figure is the UA). The light-emitting device of the second embodiment includes an insulating substrate 10, a second conductive foil η, a second conductive foil ϊ2, a component mounting through hole 25, a sigh electrode 12a, a light-emitting element 31, and a thin metal wire 3 〇 and take out the electrode 1 la. The insulating substrate 10 is used as a support substrate for the first and second conductive foils Π12, and is used as a substrate or glass composed of FR4 (epoxide woven glass cloth) and Bismaieifflide Triazine Resin. An epoxy (epoxy) substrate, a glass polyimide substrate, or the like. In the present embodiment, for example, a substrate composed of a BT resin is used. The thickness 11 of the insulating substrate 12 319288 200843142 is, for example, about 6 〇 #m. The surface is attached to the surface of the insulating substrate 10 by two conductive deposits 11 and the second conductive foil 12 by pressure bonding. As the ... conductive box U and the second cap copper (four) Γ can be carved metal. In the present embodiment, the metal falling from the side of the right side is used. These are the main parts of the wiring, and the second conductive members 2 constitute the branch of the light-emitting element 31. 'The film thickness of these is selected as the wiring and the electric component of the 31-channel component of the light-emitting element." The thickness can be determined according to the mounted electrical-conducting junction. The first conductive foil 11 and the second, The film thickness is equal to, for example, 9/zm to 35/zm. Near; = is provided by the through hole 25 in the approximate center of the insulating substrate 10. The component mounting through hole 25 can be implemented. The square center is, for example, formed by laser for 2 s. The ^ _: the side surface is a flat inclined surface formed by the R dry (four) method and is sufficiently large, and the insulating substrate 1Q of the light-emitting device = 5 can be achieved. It can be used for component placement; it is divided into a plurality of elements. The perforation "The size of the two through-holes 25 is formed by a square, a circle, an ellipse, or a = for example, The component mounting through hole 2, ^ ', / shape. The diameter is 〇.3_, and the diameter of the opening below is ^ 直 ' 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直 直The inclination angle of the inclined surface 26 of the component mounting through hole 25 is 319288 13 200843142 _ 125 degrees. The second and second electric powers are formed by the younger brother 2 * $ poise 12 of the bottom surface of the through hole 25 for covering the component mounting. That is, the component is placed from the insulating substrate 10, the main conductor is not 10, and the second conductive $12<t) side is penetrated through the insulating substrate, and the white 12 moon surface (the insulating substrate 10 side) is exposed. Set. Then, the remaining second guide W is the bottom surface of the through electrode 25 for the fixed electrode 12a. The illuminating element 31 is a light-emitting element of a group II nitride-based compound semiconductor (for example, ::=Ν), and is provided on the surface of the element! Electrode 34 Electrode 35. The shape of the light-emitting element 31 is 0. 15_4, and the degree of question is 60" to 10〇//m. Here, for example, a light-emitting element 31 having a height of (10) Γ is used. The light-emitting element 31 is disposed so as to be embedded in the f-type of the device mounting device, and is fixed to the fixed electrode of the device-mounted device 5 by the adhesive 33. In addition, although a plurality of pieces 31 of the light-emitting elements 31 are actually disposed later, the conductive metal layer 23 is laminated on the fixed electrode L 12a (23 phantoms. The subsequent agent 33 is, for example, a non-conductive paste. Or a conductive paste such as silver (Ag). The light-emitting element 31 may also be coated with gold (Au) on the fixed electrode 12a and fixed by Au eutectic. The rolled element 31 is mostly embedded in the element. The mounting through-hole 25' has a larger surface than the surface (one main surface) of the insulating substrate 1G. The illuminating element is disposed on the second conductive undulation 12 of the back surface (the other main surface) of the insulating substrate 1G. Since the electrode (5) is fixed, the light-emitting device can be greatly reduced in thickness. In the present embodiment, the upper surface of the light-emitting element 31 is 319288 14 200843142, which protrudes from the insulating substrate ίο, and $^ 2 W ^ ^ ΑΛ jl Further, the wire bonding work of the first electrode on the upper surface of the electrode 35) can be easily performed. (The shape of the younger brother = ria is formed by patterning the first conductive core into the opening 4), and is connected by the light-emitting element m line 30. The first electrode 34 and the metal thin back-mounted electrode 12b The first electrode 35 is electrically connected to the second electrode 35 of the member 31, and the upper surface of the light-emitting element 31 is formed by the second electrode 35 of the light-emitting element τ. Referring to the figure (10), the second line is the same as the second conductive material which is the back surface mounting electrode m, and the light-emitting 7L element 31 is fixed to the ground by the non-conductive paste. The electrical metal layer 23d The sigh-electrode 12a (the guide and the illustration are omitted, but the second electrode 35 can also be used as the back surface element of the light-emitting element 3 i of the opposite side of the light-emitting element 3 i is fixed on the fixed electrode The metal layer == is connected to the back surface mounting electrode (10) by the electrode 12a. Further, | the punching layer 13 formed by the electric money of the component mounting through hole 25. The punching electric wire is: , "罘2 V electric foil 12 (fixed electrode 12a) surface. Change" (4) Although the inner wall of the through hole 25 only forms a perforated electric chain layer: the second calf is in addition to The field, the perforated plating layer 13 is 盥- and the second conductive foil 12 (: solid machine 19, ^ 1 ^ 11 white 12 (Guhan bungee 12a) - body, and connected to these components. 319288 15 200843142 conductive The metal layer 23 is a multilayer metal layer which can be overlapped and has high hardness. Here, for example, a nickel (Ni)-gold (Au) layer or Ni-Ag, or Ni using palladium (Pd) or the like may be used. -Pd layer or Ag-Pd layer. The Ni layer is a metal layer having a high hardness, and the Au layer or the Ag layer can be bonded to the metal thin wire 3 。. When a nickel (Ni)-gold (Au) layer is used, As described above, the light-emitting element 3 can be fixed by using - eutectic. In addition, when it is eutectic, it is additionally subjected to, for example, electroplating. The conductive metal layer 23 (for example, thickness 33//m) is utilized. The layer is provided with a conductive metal layer core on the first conductive box 1 and the second conductive layer 13 and the perforated electric layer 13 and the back surface mounting electrode 12b. Moreover, the conductive gold 23d and 23e are also disposed above (double-sided) of the smashing electrode 12a. The conductive metal repairing system uses the metal thin wire 3〇 to electrically connect with the light-emitting element "dipole 34", and Electrode mountain (i, the genus layer 23c, 23d'23e on the anode side of the light-emitting element 31 is formed, and the cathode side of the ith, the gold and the back surface of the light-emitting element 31 (or the fixed electrode 12a) The electrode is from 12) a total of _ into the light-emitting element 31. Take out the electrode Ha and install the NVC 28, 28 on the back to isolate the γ ps 97 D 12b, using the isolation trench 27, the wood, in the isolation trench 27, 2S, 9S, coffee metal layer 23. 8 28 The inner wall is also provided with a conductive transparent resin 32 which covers the whole, and is used as a lens of the light-emitting element 3 and the gold juice W at the same time as the thin line 30. 319288 16 200843142 Further, a tree (four) (soHer resist layer) 38 is provided on the other main surface (back surface) side of the insulating substrate 1G. The solder resist layer is from the back side: the conductive metal layer 23c is continuously covered to the isolation trench 2δ, and the port is again in the isolation trenches 28, 28 on the back side of the insulating substrate 1. When the light-emitting device 50 of the present embodiment is mounted, the conductive metal|23 exposed on both sides of the solder resist 38 can be fixed to the mounting base 2 by solder or the like. The solder resist layer 38 can be used to prevent short-circuiting of the anode side and the cathode side, and to absorb the isolation trenches 28, 28 in part. (Secondly, the 帛2 diagram shows the individual elements of the present invention (〇611). The flute 2 (A) is its upper view; the 2nd (Β) is its bottom view. The top of the substrate 1 is attached The first conductive case 2: the second conductive case 12 is integrally attached to the lower surface. In the second figure, the illustration is shown

St面之去導電性金屬層23，而第1導電荡11及第2導 圖不。在弟1導電们1(導電性金屬層23)設 =隔_ 27以將第i導電们1P(|離成左右並將其一方 (IT金屬層心側)當作陽極電極，而將另-方(導電性全 SI3:當作陰極電極。亦即’在中央心 將匕;=Γ圖案之左方形成有L字狀的圖案，且 宰告作r極;Γ田作·光70件31之陽極電極，將凹狀的圖 木田作陰極電極。在凹狀的圖荦 元件^的元件载置用貫穿孔2=大致中央设有载置發光 =導電荡12係利用隔離溝別，’而隔離成三個， 將左右兩端分別當作陽極電極與陰 於左右設有狹長方形之圖案，而於中央設有凸狀Γ圖^ 319288 17 200843142 左邊之狹長方形的圖案成為陽極電極， 的圖案成為陰極電極。中央之凸狀的，=之狹長方形 載置用貫穿孔25露出之固設電極12a的區域系。成為從元件 在7G件載置用貫穿孔25之側壁形； 13,藉此連結有成為陽極電極及陰極電極有=電錄層 及第2導㈣12且電連接（參照W⑻圖）=導電落11 之周端部形成有穿孔2G，在該穿孔2G内亦 2單元 鑛層13。藉此即使在單元之周端部亦連 有:孔電 及陰極電極之第1導如i及第2導電極電極 地進行穿孔連接。 冶U，且可確實 Μ^述之早元係以行列狀並排在較大薄片狀的安裝基被 、、、巴、、土板10)上排列複數個而形成（參照第6圖）。、土 貫穿^5^巾’#由在貫穿絕緣基板1G的元件載置用 貝牙孔25之内部埋設發光元件31，且配置在第2導電箱 12上，即可將發光裝置5〇大幅薄型化。 第7圖）所示，在成為支撐材料之基底基板2〇〇 上登層裔光騎⑽的安裝構造中，會有即使最低亦需要 表光7〇件100與基底基板2〇〇之總厚度以上，且發光 之薄型化無法進展的問題。 、曾币但是本實施形態中，由於在不存在絕緣基板10之第2 =電箔12(固設電極12a)上配置發光元件31，所以可完全 心略以往限制甚大的絕緣基板1〇之厚度，且隨絕緣基板 H)之厚度，實現作為發光裝置5〇之薄型化。因而，即使 採用與以往同等厚度之發光元件3丨及絕緣基板1 〇，亦可 319288 18 200843142 -謀求發光裝置50之薄型化。具體而言，例如，發 50可形成150/zm至200 //m左右之薄度。 、 由^存在有料餘1G，由第 =極12a即成為發光元件31之支揮材料。固設電極 ，二二:::的穿孔電鐘層)，雖然薄至例如28“ 設有包含硬度高之以層的導電性 ^層23d、23e(厚度各為33㈣左右）。藉此，即使不存 緣基板1()，作為發光元件31之支 足夠的強度。 T刀J隹保 元：載置用貫穿孔25之側壁亦疊層有穿孔電 ΐΐ孔2、5Γ—屬層挪，則即使其為利用元件載置用 二孔25來元全隔離絕緣基板1()的構造，亦可確保 舍光凡件31之支撐材料的強度。 … 上述導電性金屬層23之厚度係為其_例+ =及絕緣基板⑺之厚度及可支持其之強度； 又，固設電極12a可依穿不丨恭枯昆，0 Ua(第1導電箔⑴及背 I曰而與取出電極 第1導電箱η及第2導電：二：⑽形成一體。又， 面而設置。 ¥^自12係跨及絕緣基板U)之兩主 換句話說，發光元件3丨 3〇而與絕緣基板Π)之表面的導1= ^係用金屬細線 面側=電性金屬層23c及背面安農電極m電連接:月 發光元件31之第2電極35係利用導電性糊固 319288 19 200843142 _設在元件载置用貫穿孔25之底部且介由固設電極i2a而與 直Λ後盍纟巴緣基板1 〇之主面（背面）的背面安裝電極1 連接。 口而藉由將成為陰極電極的背面安裝電極12^ (導電 f生孟屬層23c)之狹長方形圖案形成較大，即可提高固設在 凡件载置用貫穿孔25之底面的發光元件31之散熱性。 另外，在第2(B)圖之虛線的區域，設有阻焊層抑用 以防止隔離溝28、2δ，之高低差，及防止陽極一陰極間之短 路0 更且，穿孔電鐘層13上之導電性金屬層23b，亦可活 光元件31之反射器。如前已述，由於元件载置用 貝=25之側面藉由雷射燒孔〇aser仏）而具有 良好效率反射在其焦點方向(Γ方Γ1之發光以 =，參照第3及4圖就本發明之製造方法加以說明。 :明之製造方法，係包含：準備在兩主面 蛉電錢第2導電荡之絕'緣基板 =乐 成預定之元件載置用貫穿孔的區域之第工導1：擇性^除形 基板露出的步驟；選擇性乾兹刻絕緣基板，:开夺絕緣 置用貫穿孔，且檢測第2導電荡之背面並停止乾：件载 疋件载置用貫穿孔之底面形成露 2 ^ ’在 固設電極的步驟；利用穿孔電鏡在第工導^^背側的 二元件载置用貫穿孔之内壁形成穿孔⑽^ =導電 導電箱及第2導電編彳成所期望之形:以::取將 319288 20 200843142 .=載=2電極的步驟；在取出電極、背面安裝電極、 =件载置用貝牙孔之内壁的穿孔電鍍層、固設電極叠⑽ 成鐘錄層及鑛金或鑛銀層的步驟；在元件載置用貫穿^ =;設!極地嶋元件的步驟；利用金屬細線來 *光7G件之$ 1電極與取&電極的 脂來被覆發光元件及金屬細線的步驟;及依各單元= 個別之發光裝置的步驟。 °成 唱及Ϊ l Jr弟3⑴圖):準備在兩主面貼附有第1導電 及弟2 ^电洎之絕緣基板的步驟。 貼附=”主:=之广導電们1，在另… 1〇。 白1冋專厚度之第2導電箔的絕緣基板 基板作基板1〇，例如為由FR4或βΤ樹脂所構成的 Ϊμ基板或玻璃聚_胺基板，依情況亦可為 ^本，::Ρ 〇基板或陶£基板等、可撓性薄片、薄膜 基板/ 式中，例如係採用厚度6〇"左右的ΒΤ樹脂 —作為第1導電落11及第2導電笛12，只要其為可進 I: 可。本形態中係採用由銅所構成的金屬 , 35 ^冶U、第2導電箱12之膜厚係為同等，為9 ㈣至/5“（例如13左右。 線之導厂電们2 ’係採用厚度對應配 之電流容量等而：：=之厚度係可依被安裝的電路元件 、任思决疋。更且第2導電箔12，由於係構 319288 21 200843142 -成用以搭載、支撐發光元件31之固执 考慮選擇作為支撐材料之強度。°又…2a，所以亦可 然後’穿孔2〇係借用]^ 1導電落π、第2導1 12广、機並利用鑽頭等貫穿第 ㈣連續於複數個單及絕緣基板10而開孔。穿孔 可分離相邱_ 早70之兩端形成開縫狀，藉此 J刀離相郯的早兀（苓照第6圖）。 第2步驟（第3(B)圖）：選擇性去除 置用貫穿孔的區域之第！導電落，將成預:之疋件载 雖於後面有敘述，但是本實施二1 路出的步驟。 用雷射之乾I虫刻法（雷射燒孔^； ^，利用使 孔。此時當雷射所能照射的區域存==置:貫穿 雷射輪出對&較弱的情況，雷射就奋/^白_%，在 射輪出較強而可去除c 主胃u反射’而在雷 ln 之私度的情況，苴下方夕π #甘』 10亦會炫化等，容易發生钱刻不良。 巴緣基板 因此，本步驟中，將形成有 等當作遮罩，並利用峨選擇去除=:的“劑PR 穿孔之預定區域的第！導電落:、二 兀件载置用貫 板10露出的開口部OP。 / ’以形成該區域之絕緣基 第3步驟（第3(〇圖）：選擇性 元件载置用貫穿孔，且檢測第2導電緣基板以形成 刻，在元件载置用貫穿孔之底二並停止乾钱 背側的固設電極的步驟。 路出有卑2導電箱之 將從開口部〇p露出的絕緣基板 作為乾_法_用制雷射之_ ㈣。在此， 別去（雷射燒孔加工 319288 22 200843142 - 法）。雷射係例如為YAG雷射、C〇2雷射等，可蝕刻BT樹脂 之絕緣基板10，並以作為第2導電箔12之Cu不會熔融之 程度為條件進行雷射照射。 作為雷射燒孔加工法，有對已去除第1導電箔11的開 口部0P之直徑進行同等之雷射加工的開銅窗（conformal ) 加工法、或比開口部0P之直徑小而進行雷射加工的大窗口 (large window)力口工法等。 對從開口部0P露出的絕緣基板10照射雷射。絕緣基 ( 板10會被去除，且檢測出第2導電箔12之背面（與絕緣基 板10抵接之侧）的露出，並停止蝕刻（雷射照射）。藉此可 形成完全貫穿絕緣基板10的元件載置用貫穿孔25,而第2 導電箔12之背面的一部分會露出。該露出的第2導電箔 12 ’即成為固設電極12 a。 本實施形態中，由於可利用第2導電箔12來進行終點 檢測，所以可既正確且容易地形成元件載置用貫穿孔25、 及覆蓋該元件載置用貫穿孔25之底部的固設電極12a。 t , 又’由於可利用弟2導電箱12進行終點檢測’所以可加工 絕緣基板10,且可適當選擇第2導電箔12(Cu)不會熔融之 程度的雷射照射條件。 另外，以雷射燒孔加工法所形成的元件載置用貫穿孔 25，其側壁係成為平坦的傾斜面26。元件載置用貫穿孔25 之大小係形成比被收納之發光元件31大的正方形、圓形、 橢圓形、或是多角形等的形狀。例如，元件載置用貫穿孔 25之形狀，係上面開口之直徑為0. 3mm，下面開口之直徑 23 319288 200843142 - 為〇· 16醜之研鉢狀。元件載置用I空π 0£： 斜角度為125度。件載置用貝牙孔Μ之傾斜面的傾 第4步驟（第3〇))圖）：利用穿孔電 第2導電箔、元件载置 泠电泊及 步驟。 ^置用貝牙孔之内壁形成穿孔電錢層的 首先，利用除膠渣處理來去除元件载置用貫穿孔 内之钱刻造。又利用除膠渣處理使元件載置用貫穿孔U 内之内壁變成粗面，而電鍍層之 處理係以使用氧化劑之除㈣、夜來…除膠渣 =重鉻酸等，在此係採用過叫又，在依氧‘ 進:處理之前’ #進行膨潤處理時就报容易去除膠洁 孕父佳。 —1 以抗蝕劑PR被覆背面，將絕緣基板1〇之全主 免溶液中，並對第1導電箱11及第2導電f 12表=貝在 凡件載置用貫穿孔25内施予Cu之無電解電錢，更、施予【 之電解電鍍，形成約20㈣之膜厚的穿孔電鑛層13。 穿孔電鍍層13係覆蓋露出於元件載置用貫穿孔 :壁：絕緣基板10表面。又穿孔電鍍層13係形成於第T =電笛11及固設電極12a之表面，且與該等—體化並 弟1導電箔11及第2導電箔12。 又，穿孔電鍍層13亦形成於絕緣基板1〇端部之# 的内壁，且在絕緣基板1 〇之端部連接第1導電箔 第2導電箔12。 ’ 兵 弟5步驟（第4圖）：將第1導電箱及第2導電箱餘刻 319288 24 200843142 .成所期望之形狀以形成取出電 本步驟令，以抗蝕劑層衣电極的步騾。 1導電㈣及第2導々9未圖不―)被覆絕緣基板10之第 第2⑴圖所示的=之安在弟1導電落η曝光顯影 心于肮之圖案、 的抗蝕劑層當作遮罩而進行 ：二，且將殘餘 形成隔離溝27，而第以電箱圖1之餘刻。藉此可 箔11為銅時就#爾# 圖木化。在第1導電 韻劑層之剝離去除。a _作為㈣溶液。接著，進行抗 學行第2導電们2之化 導電^及第/導電二未:巧覆絕緣基板“之第〗 2⑻圖所示之左右呈二 案，將殘餘的枋黏旬s A 口木及中央之凸狀的圖 子域的W劑層當作遮罩而進 f，且形成隔離溝28，，以將第2導電落 :2導電落12為銅時，同樣使用氯化亞鐵。接著: 蝕劑層之剝離去除。 接者進仃抗 猎此，可形成分別連接發光元件 第2電極35的取出雷朽n g北 之弟1電極34及 有各發光元件背面安裝電極12b，而载置 關各… 1凡的圖案係形成多數個呈行列狀。有 此省略凡的形狀由於已參照第2(A)圖說明，所以在 抓參另昭外第單元圖案係分別利用連接圖案 '、、、弟八β)圖）而電連接。此係因在牛 電性金屬層時將第2導電络i V驟中電鑛導 屯泊z田作共通電極來使用之故。 319288 25 200843142 第6步驟（第5(A)圖）：在取出電極 元件載置用貫穿孔之内壁的穿孔電 抓泰衣^極、 鎳層及鑛金或鐘銀層而形成的步驟二M lib層錄 本步驟系將被連結的第2導 _ 共通黾極，而且在以穿孔電铲展 乍 ” σσ 牙札包鍍層13電連接的第1導電笮 11之早元圖案、及元件载置用 ^ 丨丁戟直用貝牙孔25之内壁，利 解電度來附著導電性金屬；外 毛 π技 孟7蜀層23。導電性金屬層23係為可 才合接且硬度高的多層金屬居The St surface is removed from the conductive metal layer 23, and the first conductive slab 11 and the second conductive layer are not. The first conductor 1 (conductive metal layer 23) is set to _ 27 to make the ith conductive 1P (|to the left and right and one side (the metal side of the IT metal layer) as the anode electrode, and the other - Square (conductivity full SI3: used as a cathode electrode. That is, 'in the center of the heart will be 匕; = Γ pattern on the left side of the L-shaped pattern, and the slaughter for r pole; Γ田作·光70件31 In the anode electrode, the concave-shaped figure Mutian is used as the cathode electrode. In the concave-shaped element, the component-mounting through-hole 2 is provided with a substantially centrally placed light-emitting layer = the conductive layer 12 is used for the isolation groove, and Isolation into three, the left and right ends are respectively used as the anode electrode and the shaded left and right sides are provided with a narrow rectangular pattern, and the center is provided with a convex shape. ^ 319288 17 200843142 The narrow rectangular pattern on the left side becomes the anode electrode, the pattern The cathode electrode is formed in a convex shape in the center, and the region in which the electrode 12a is fixed by the through hole 25 is formed in the narrow rectangular mounting hole. The side member is formed in the side wall of the 7G member mounting through hole 25; The anode electrode and the cathode electrode are connected to each other and the second electrode (four) 12 is electrically connected (see W (8) diagram). A perforation 2G is formed at a peripheral end portion of the electric drop 11, and a unit ore layer 13 is also formed in the perforated hole 2G. Thus, even at the peripheral end portion of the unit, the first conduction of the hole and the cathode electrode, such as i and the The two conductive electrodes are connected by perforation. The first element is arranged in a row and arranged on a larger sheet-like mounting base, and the bar, and the soil plate 10). The light-emitting element 31 is embedded in the inside of the element mounting hole 25 that penetrates the insulating substrate 1G, and is disposed on the second conductive case 12, that is, the ground through hole (5). The light-emitting device 5 can be made thinner and thinner. As shown in Fig. 7), in the mounting structure of the pedestal ray riding (10) on the base substrate 2 that serves as the supporting material, there is a need to have a surface light even if it is the lowest. There is a problem that 100 is more than the total thickness of the base substrate 2, and the thinning of the light emission cannot be progressed. In the present embodiment, since the light-emitting element 31 is disposed on the second electric foil 12 (the fixed electrode 12a) in which the insulating substrate 10 is not present, the thickness of the insulating substrate 1 which is greatly limited in the past can be completely understood. With the thickness of the insulating substrate H), the thickness of the light-emitting device 5 is reduced. Therefore, even if the light-emitting element 3A and the insulating substrate 1 having the same thickness as in the related art are used, it is possible to reduce the thickness of the light-emitting device 50 by 319288 18 200843142. Specifically, for example, the hair 50 can form a thinness of about 150/zm to 200 //m. There is a remaining 1G from ^, and the = pole 12a becomes the material of the light-emitting element 31. The electrode is fixed, and the perforated electric clock layer of the 22::: is thin, for example, 28", and the conductive layers 23d and 23e (having a thickness of about 33 (four) each) having a high hardness are provided. The substrate 1 () does not have a sufficient strength as the light-emitting element 31. The T-knife: the side wall of the through-hole 25 for mounting is also laminated with the perforated electric boring holes 2, 5 Γ - the layer is moved. Even if it is a structure in which the insulating substrate 1 () is completely isolated by the two holes 25 for component mounting, the strength of the supporting material of the light-emitting member 31 can be ensured. The thickness of the conductive metal layer 23 is _ Example + = and the thickness of the insulating substrate (7) and the strength that can be supported; Moreover, the fixed electrode 12a can be worn without being smashed, 0 Ua (the first conductive foil (1) and the back I 曰 and the first electrode of the extraction electrode Box η and 2nd conductive: 2: (10) is integrated. Also, the surface is provided. ¥^ From the 12-series and the insulating substrate U), in other words, the light-emitting element 3丨3〇 and the insulating substrate Π) The surface of the surface 1 = ^ is used for the metal thin wire surface side = the electric metal layer 23c and the back surface Amnon electrode m are electrically connected: the second electrode 35 of the moon light emitting element 31 is advantageous Conductive paste 319288 19 200843142 _ is provided at the bottom of the component mounting through hole 25 and is connected to the back surface mounting electrode 1 of the main surface (back surface) of the straight Λ 盍纟 缘 基板 substrate 1 介 via the fixed electrode i2a By forming a narrow rectangular pattern of the back surface mounting electrode 12 (electroconducting layer 23c) which becomes a cathode electrode, it is possible to increase the light emission fixed to the bottom surface of the through hole 25 for the workpiece mounting. The heat dissipation of the element 31. In addition, in the area of the broken line of the second (B) figure, a solder resist layer is provided to prevent the height difference of the isolation trenches 28, 2δ, and to prevent the short circuit between the anode and the cathode. The conductive metal layer 23b on the perforated electric clock layer 13 can also be a reflector of the active light element 31. As described above, since the side of the element mounting bay = 25 is made by laser burning holes 〇 aser 仏) The method of manufacturing the present invention is described with reference to the third and fourth drawings. The manufacturing method of the present invention includes: preparing for the second main surface of the electricity money. The conductive substrate is the edge substrate = the area where the component is placed through the through hole The first work guide 1: the step of exposing the selective substrate: the selective dry etching of the insulating substrate, the opening of the insulating through hole, and detecting the back side of the second conductive swash and stopping the drying: The bottom surface of the through hole is formed to form a dew 2 ^ ' in the step of fixing the electrode; the perforation is formed on the inner wall of the through hole for the two-element mounting on the back side of the first guide by the perforated electron microscope (10) ^ = conductive conductive box and second Conductive braiding into the desired shape: to: 319288 20 200843142 . = load = 2 electrode steps; in the extraction electrode, the back mounted electrode, = the perforated plating of the inner wall of the bead hole for mounting, solid The steps of forming the electrode stack (10) into the chord layer and the gold or silver layer; the step of placing the component on the component; and the step of setting the pole element; using the thin metal wire to make the $1 electrode of the 7G piece and the & The step of coating the light-emitting element and the thin metal wire with the grease of the electrode; and the step of each unit = individual light-emitting device. ° Cheng Sing and Ϊ l Jrdi 3 (1)): The step of attaching the first conductive and the second insulating substrate to the two main surfaces. Attachment = "Main: = wide conductive 1, in another... 1". The insulating substrate of the second conductive foil of the thickness of 1 作 is used as the substrate 1 , for example, Ϊμ substrate composed of FR4 or β Τ resin. Or a glass poly-amine substrate, or in the case of: Ρ 〇 substrate or ceramic substrate, flexible sheet, film substrate / type, for example, a thickness of 6 〇 " As the first conductive fall 11 and the second conductive flute 12, it is possible to use I. In the present embodiment, a metal made of copper is used, and the film thickness of the 35 and the second conductive case 12 is equal. , for 9 (four) to /5" (for example, around 13. The line of the factory power 2 ' is based on the thickness of the corresponding current capacity and the like:: = thickness can be based on the installed circuit components, Ren Si. Further, the second conductive foil 12 is selected from the structure 319288 21 200843142 - for the purpose of mounting and supporting the light-emitting element 31, and the strength of the support material is selected as the support material. Therefore, 2a can be used, and then the 'perforation 2 can be borrowed. ^ 1 conductive falling π, second guiding 1 12 wide, machine and using a drill bit, etc. through the fourth (continuous) of a plurality of single and insulating base The plate 10 is perforated. The perforation can separate the phase _ _ the ends of the early 70 form a slit shape, whereby the J knife is separated from the early 兀 (see Fig. 6). The second step (Fig. 3(B) ): Selectively remove the first! Conductive drop in the area where the through hole is placed, which will be described later. However, the steps of this embodiment are as follows: The dry method of the laser is used. (Laser burning hole ^; ^, use to make the hole. At this time, when the laser can be irradiated in the area == set: through the laser wheel out of the & weaker situation, the laser will fight / ^ white _% In the case where the shooting wheel is strong and can remove the main stomach u reflection', and in the case of the privateness of the Ray ln, the 苴 # 甘 甘 甘 甘 甘 甘 甘 甘 亦 亦 亦 亦 亦 亦 亦 亦 亦 亦 亦 亦 容易 容易 容易 容易 容易 容易 容易 容易 容易 容易In this step, an opening portion OP in which a predetermined area of the agent PR perforation is removed by using 峨 is selected as the mask, and the opening portion OP exposed by the two-piece placing plate 10 is formed by the 峨 selection removal =: / 'Insulating the insulating layer in this region. Step 3 (3): Selective element placement through-hole, and detecting the second conductive edge substrate to form a mark, for component placement The step of stopping the bottom of the perforation and stopping the fixed electrode on the back side of the dry money. The insulating substrate which is exposed from the opening portion 〇p of the quaternary 2 conductive box is used as a dry ___. , do not go (laser burning hole processing 319288 22 200843142 - method). The laser system is, for example, YAG laser, C〇2 laser, etc., can etch the insulating substrate 10 of BT resin, and as the second conductive foil 12 Laser irradiation is performed under the condition that the degree of Cu is not melted. As the laser hole burning method, there is a conformal processing for laser processing in which the diameter of the opening portion 0P of the first conductive foil 11 is removed. A method or a large window that performs laser processing smaller than the diameter of the opening portion 0P. The insulating substrate 10 exposed from the opening portion 0P is irradiated with a laser. The insulating substrate (the board 10 is removed, and the rear surface of the second conductive foil 12 (the side abutting on the insulating substrate 10) is detected, and etching (laser irradiation) is stopped. Thereby, the insulating substrate 10 can be completely penetrated. The component mounting through hole 25 is exposed, and a part of the back surface of the second conductive foil 12 is exposed. The exposed second conductive foil 12' serves as the fixed electrode 12a. In the present embodiment, the second conductive layer can be used. Since the foil 12 performs the end point detection, the component mounting through hole 25 and the fixed electrode 12a covering the bottom of the component mounting through hole 25 can be formed accurately and easily. The conductive box 12 performs the end point detection. Therefore, the insulating substrate 10 can be processed, and the laser irradiation conditions to the extent that the second conductive foil 12 (Cu) does not melt can be appropriately selected. Further, the components formed by the laser hole burning method are used. The mounting through hole 25 has a side wall which is a flat inclined surface 26. The element mounting through hole 25 has a size larger than a square, a circle, an ellipse, or a polygon which is larger than the light-emitting element 31 to be housed. Shape. For example, component The shape of the through hole 25 is used, and the diameter of the upper opening is 0.3 mm, and the diameter of the opening below is 23 319288. 200843142 - It is a 钵 16 16 ugly shape. The component is placed with I π 0 £: The oblique angle is 125 The fourth step (third 〇) of the inclined surface of the beak hole for the mounting of the material is shown in Fig. 4): the second conductive foil is pierced, and the component is placed on the pole and the step is carried. ^Using the inner wall of the beak hole to form a perforated electric money layer First, the degumming treatment is used to remove the money in the through hole for component mounting. Further, the inner wall of the through hole U for component placement is made into a rough surface by the desmear treatment, and the treatment of the plating layer is performed by using an oxidizing agent (four), night, ... removing the slag = dichromic acid, etc. Calling again, before the oxygen 'in: before processing' # When the swelling treatment is reported, it is easy to remove the gel and the pregnant father. —1, the back surface of the insulating substrate 1 is covered with the resist PR, and the first conductive case 11 and the second conductive f 12 table are placed in the through hole 25 for the workpiece mounting. The electroless plating of Cu is performed, and electroplating is performed to form a perforated electric ore layer 13 having a film thickness of about 20 (four). The perforated plating layer 13 is exposed to the through hole for element mounting: wall: the surface of the insulating substrate 10. Further, a perforated plating layer 13 is formed on the surface of the T = electric horn 11 and the fixed electrode 12a, and the first conductive foil 11 and the second conductive foil 12 are formed in the same manner. Further, the perforated plating layer 13 is also formed on the inner wall of the end portion of the insulating substrate 1 and the first conductive foil second conductive foil 12 is connected to the end portion of the insulating substrate 1 . 'Military 5 steps (Fig. 4): The first conductive box and the second conductive box are left 319288 24 200843142. The desired shape is formed to form a take-out step, and the steps of the resist layer coating electrode Hey. (1) Conductive (4) and 2nd guide 9 are not shown in Fig. 2) The resist layer shown in the second (1) of the insulating substrate 10 is exposed to the resist layer of the pattern The mask is carried out: second, and the residual is formed into the isolation trench 27, and the first part of the electrical box is shown in FIG. Therefore, when the foil 11 is made of copper, it is #尔#图木化. Peeling off the first conductive layer. a _ as a (four) solution. Next, the anti-study line 2 conductivity 2 and the second/conductor 2: the cover of the insulating substrate "the second" (2) shown in the left and right cases, the remaining 枋 旬 s s A mouth wood The W agent layer in the convex sub-domain of the center is used as a mask to form f, and the isolation trench 28 is formed. When the second conductive fall: 2 conductive drop 12 is copper, ferrous chloride is also used. Then: the peeling off of the etchant layer is carried out, and the second electrode 35 of the light-emitting element is connected to the second electrode 35, and the electrode 13b is mounted on the back surface of each of the light-emitting elements. Each of the patterns is formed in a plurality of patterns, and the shape is omitted. Since the shape is omitted as described in the second (A) diagram, the first unit pattern is used to connect the pattern, respectively. And the other is the electric connection. This is because the second conductive system is used in the electro-acoustic metal layer, and the electric conductivity is used as a common electrode. 319288 25 200843142 6 steps (Fig. 5(A)): The perforation of the inner wall of the through hole for the electrode element mounting is taken out. Step 2, which is formed by the gold or the silver layer, is the second _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 1 The early element pattern of the conductive crucible 11 and the inner surface of the bead hole 25 are used for the component mounting, and the conductive metal is adhered to the electric property; the outer hair is π. The conductive metal layer 23 is a multi-layer metal metal which can be joined and has high hardness.

在此，例如為鎳（Ni) —金（Au) 層或Nl★層。又’亦可為使肢⑽等之Ni-Pd層或Here, for example, a nickel (Ni)-gold (Au) layer or an Nl ★ layer. Also, it may be a Ni-Pd layer such as a limb (10) or

Ag-Pd層。Mi層係為硬度高的金屬層，如層或“層係可 與金屬細線30進行搭接作業。 藉此，在取出電極lla、穿孔電鍍層13、背面安裝電 極12b上分別疊層有導電性金屬層23&、⑽、23c，在固 叹電極12a上（雙面），疊層有導電性金屬層23d、23e。 本貝％形怨之固設電極12a ,由於係成為發光元件31 之支撐材料，所以藉由導電性金屬層23d、23e設在其雙 面不存在有絕緣基板1 〇的固設電極丨之部分的強度即 可確保。 又’兀件載置用貫穿孔25之内壁的導電性金屬層 23b、23d係發揮作為發光元件31之反射器的功能。 換句話說’利用本步驟，可以一步驟實施用以確保固 設電極12a部分之強度之電鍍層（導電性金屬層23d、23e) 的形成、與搭接用之電鍍層（導電性金屬層23a)的形成、 及發光元件31之反射器（導電性金屬層23b、23d)的形成， 26 319288 200843142 且可簡化製造步驟。 另外，本實施形態中，成為導電性金屬層23之底層的 第1導電箔11及第2導電箔12由於係由銅所構成，且穿 孔電鍍層13亦以鍍銅所形成，所以可將形成於該等元件之 上的鍛錄層及鐘金或鍵銀層均勻地形成。 第7步驟（第5(B)圖）：在元件載置用貫穿孔之底面的 固設電極上固設發光元件的步驟。 將發光兀件31之第2電極35利用接著劑33固設在以 復褒το件載置用貝牙孔25之底面的方式設置的固設電極 12a上。發光元件31之固設係使用貼片機 mounter)。發光件31實際所固設者，係為疊層在固設電 ° 上的導電性金屬層23(23d)。由於元件載置用貫穿 25係开^成研銶狀’所以容易對其内部進行發光元件31 之安裝。 i 2 Γ"著Γ3 3係例如為非導f性糊。又，在介以固設電極 12a而仗月面取出第2雷 ^ ^ 包極35的^況，接著劑33係使用 銀Ug) 4的導電性糊。 上施予鍍全（Al〇 t 餐先凡件31係在固設電極12a 進行Au電鍵)亦可利用&共晶來固設’該情況係另外 第8步驟（第 之第1電極盘取屮+ ).利用金屬細線來連接發光元件 一 ％ aj电極的步驟。 使用金之金屬 行電極位置之岡#、、 一面以晶片接合機（bonder)進 發光元件31 ^如一面利用超音波熱壓接，來連接 1电極34、與被覆取出電極11a上的導 319288 27 200843142 •電性金屬層23a。同樣地，利用金屬細線3。，連接 ⑵小、運接在@面女裝電極I2b的導電性金屬層23 利兀件载置用貫穿孔25，使發光元件31之第I φ 極34(第2電極35亦為同樣）盥導電性全 电 丰η笙古命^ 分电性益屬層23a位於幾 寻:f’或使第1電極“位於突出若干的高度。換t 1兄，與如以往構造（第7圖）般疊層發光元件⑽與基底 土板200的情況相較’金屬細線3〇之搭 了 =佳地進行。又藉由使第i細突出若干 杳光兀件31以被埋設於元件載置用 ％ 安裝㈣況，亦可容易進行搭接作業、。 W的方式 弟9步驟（第5 (C)圖）：利用读日貝并 +日匕十 及金屬細線的步驟。利用透明树月曰來被覆發光元件 以透明樹脂32被覆發光元件31及金屬細修透明 曰係保護發光元件31及金屬細線30不受外面空氣侵 入，又當作光取出用凸透鏡來使用。 第10步驟（第6圖）：依各單元分割成個別 的步驟。 尤衣置 第6圖係顯示本步射W狀之絕緣基板10的—例之 =，.t6⑴圖為1薄片的平面圖；第6⑻圖為表面的放大 圖’苐6(C)圖為背面的放大圖。 如圖所示，在絕緣基板10排列有多數 狀。詳言之，將各單元在γ轴方向每次複數個利用連接列0 案29(參照第2⑻圖）來連結以形成狭長方形的單元群1 319288 28 200843142 -祆放個單元群在γ軸方向及χ軸方向配置成行列狀。又各 單元群之兩端’可利用設成開縫（s 1 i ΐ )狀之穿孔2 0來隔 離。 然後’將在絕緣基板1 〇排列成行列狀的多數個單元利 用冲壓或是切割分離成個別完成的發光裝置50。此時連結 $ 2導電箱12之連接圖案29(參照第2(们圖）亦被切斷而 第2導電箔12之單元亦分別電隔離。 f. 士具體而言，例如，絕緣基板10係為68mmxl00mm之BT 、树月曰基板的薄片。其周邊設有複數個對位孔，其内部於 行列上配置有多數個狹長方形的各單元。對位孔係被利 用於切割時之定位。 藉由將各單元形成狹長方形並排配置複數個呈行列 狀，即可大量製造發光裝置5〇,而且一定需要的反射器亦 可製作在元件載置用貫穿孔25内。 【圖式簡單說明】 ( 第1圖係本發明發光裝置的（A)上視圖，（B)剖面圖。 第2圖係用於本發明之安裝基板的（a)上視圖，（b)仰 視圖。 第3圖（A)至（D)係說明本發明之製造方法的剖面圖。 第4圖（A)及（B)係說明本發明之製造方法的剖面圖。 第5圖（A)至（C)係說明本發明之製造方法的剖面圖。 第6圖（A)至（C)係說明本發明之製造方法的平面圖。 第7圖係說明以往之發光裝置的剖面圖。 【主要元件符號說明】 319288 29 200843142 10 絕緣基板 11 11a 取出電極 12 12a 固設電極 12b 13 穿孔電鍍層 20 23 ^ 23a至23e導電性金屬層 25 元件載置用貫穿孔 26 21、 28、28’隔離溝 29 30 金屬細線 31 32 透明樹脂 33 34 第1電極 35 38 阻焊層 40 50 發光裝置 100 200 基底基板 OP PR 抗名虫劑 第1導電箔 第2導電箔 背面安裝電極 穿孔 傾斜面 連接圖案 發光元件 接著劑 第2電極 對位孔 發光元件 開口部Ag-Pd layer. The Mi layer is a metal layer having a high hardness, such as a layer or a "layer system" which can be overlapped with the metal thin wires 30. Thereby, conductivity is laminated on the extraction electrode 11a, the perforated plating layer 13, and the back surface mounting electrode 12b, respectively. The metal layers 23 &, (10), and 23c are laminated with the conductive metal layers 23d and 23e on the squeezing electrode 12a (double-sided). The fixed electrode 12a of the present invention is supported by the light-emitting element 31. Since the conductive metal layers 23d and 23e are provided on the both sides of the fixed electrode 绝缘 where the insulating substrate 1 不 does not exist on both sides of the substrate, the strength of the conductive electrode layers 23d and 23e can be ensured. The conductive metal layers 23b and 23d function as a reflector of the light-emitting element 31. In other words, by using this step, a plating layer (conductive metal layer 23d) for ensuring the strength of the portion of the fixed electrode 12a can be implemented in one step. Formation of 23e), formation of a plating layer (electroconductive metal layer 23a) for lap bonding, and formation of a reflector (conductive metal layer 23b, 23d) of the light-emitting element 31, 26 319288 200843142 and simplifying the manufacturing steps In addition, this real In the embodiment, the first conductive foil 11 and the second conductive foil 12 which are the underlayer of the conductive metal layer 23 are made of copper, and the via plating layer 13 is also formed by copper plating, so that it can be formed thereon. The forging layer and the clock gold or the key silver layer on the element are uniformly formed. Step 7 (Fig. 5(B)): Step of fixing the light emitting element on the fixed electrode on the bottom surface of the component mounting through hole The second electrode 35 of the light-emitting element 31 is fixed to the fixed electrode 12a provided on the bottom surface of the beating hole 25 for mounting by the adhesive 33. The fixing of the light-emitting element 31 is used. Mounter mounter. The light-emitting member 31 is actually fixed, and is a conductive metal layer 23 (23d) laminated on the fixed electrode. The component is placed through the 25-series. Therefore, it is easy to mount the light-emitting element 31 therein. i 2 Γ" The Γ3 3 series is, for example, a non-conductive f-type paste. Further, the second electrode is removed from the lunar surface by the fixed electrode 12a. In the case of the adhesive 33, a conductive paste of silver Ug) 4 was used. The upper plating was applied (Al〇t meal, the first part, 31 series, at the fixed electrode). 12a The Au key can be fixed by & eutectic. This is the other step 8 (the first electrode is taken from the first electrode). The step of connecting the light-emitting element to the % aj electrode by a thin metal wire. The metal electrode row position of the gold is used, and the light-emitting element 31 is bonded to the light-emitting element 31 by a wafer bonding machine, and the first electrode 34 is connected to the lead electrode 11a by the ultrasonic bonding. 27 200843142 • Electrical metal layer 23a. Similarly, the metal thin wire 3 is utilized. The connection (2) is small, and the conductive metal layer 23 of the @fest women's electrode I2b is transferred to the through hole 25 for the mounting member, so that the first φ pole 34 of the light-emitting element 31 (the second electrode 35 is also the same) Conductive all-electric 笙 笙 笙 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The laminated light-emitting element (10) is better than the case of the base soil plate 200 by the 'metal thin wire 3'. The first light-emitting element 31 is immersed in the component mounting portion. Installation (4), it is also easy to carry out the lap joint operation. W's mode 9 steps (Fig. 5 (C)): Use the steps of reading the Japanese and the 匕10 and the thin metal wire. Cover with the transparent tree moon 曰The light-emitting element is covered with the transparent resin 32, and the light-emitting element 31 and the metal fine-tuned transparent-type protective light-emitting element 31 and the thin metal wires 30 are not invaded by the outside air, and are used as a light extraction convex lens. Step 10 (Fig. 6): According to each unit, it is divided into individual steps. The sixth figure shows the insulation of this step. In the example of the plate 10, the figure t6(1) is a plan view of a sheet; the figure 6(8) is an enlarged view of the surface. The figure 苐6(C) is an enlarged view of the back side. As shown in the figure, a plurality of the insulating substrate 10 are arranged. In detail, each unit is connected in the γ-axis direction by a plurality of connection columns 0 (refer to the second (8) diagram) to form a narrow rectangular unit group 1 319288 28 200843142 - 个 a unit group in γ The axial direction and the x-axis direction are arranged in a matrix. The both ends of each unit group can be isolated by the slits 20 formed in a slit (s 1 i ΐ ). Then, the insulating substrate 1 is arranged in a row and column. A plurality of cells are separated into individual light-emitting devices 50 by stamping or cutting. At this time, the connection pattern 29 of the $2 conductive case 12 is connected (see the second (picture) is also cut off and the second conductive foil 12 is The unit is also electrically isolated. f. Specifically, for example, the insulating substrate 10 is a sheet of 68 mm x 100 mm BT, a tree raft substrate, and a plurality of alignment holes are provided around the periphery, and a plurality of the inner rows are arranged in the row and column. Each unit of narrow rectangular shape. The alignment hole system is used for cutting. By arranging a plurality of cells in a narrow rectangular shape and arranging a plurality of rows in a row, a large number of light-emitting devices 5 can be manufactured, and a reflector which is necessarily required can be formed in the component mounting through-holes 25. (Fig. 1 is a top view, (B) cross-sectional view of the light-emitting device of the present invention. Fig. 2 is a (a) top view and (b) a bottom view of the mounting substrate of the present invention. (A) to (D) are cross-sectional views illustrating a manufacturing method of the present invention. Fig. 4 (A) and (B) are cross-sectional views illustrating a manufacturing method of the present invention. Fig. 5 (A) to (C) are drawings. A cross-sectional view of a manufacturing method of the present invention will be described. Fig. 6 (A) to (C) are plan views for explaining the manufacturing method of the present invention. Fig. 7 is a cross-sectional view showing a conventional light-emitting device. [Main component symbol description] 319288 29 200843142 10 Insulating substrate 11 11a Takeout electrode 12 12a Fixing electrode 12b 13 Perforated plating layer 20 23 ^ 23a to 23e Conductive metal layer 25 Component mounting through holes 26 21, 28, 28' Isolation groove 29 30 metal thin wire 31 32 transparent resin 33 34 first electrode 35 38 solder resist layer 40 50 light-emitting device 100 200 base substrate OP PR anti-infesticide first conductive foil second conductive foil back-mounted electrode perforated inclined surface connection pattern Light-emitting element adhesive second electrode alignment hole light-emitting element opening

C 30 319288C 30 319288

Claims (1)

200843142 、申請專利範圍： i. 種發光裝置，其特徵為具備： 第1導電箱及第2導電笛，設在絕緣基板之兩主面； 置用貫穿孔，貫穿上述絕緣基板； 、 又黾極，由覆盍上述貫穿孔之底面的上述第2 導電箔所形成； 發光元件，固設在上述固設電極上，且埋設在上述 絕緣基板之元件載置用貫穿孔；及 在" …取出電極’利用金屬細線來與由上述第1導電膜所 形成的上述發光元件之第1電極相連接。 、 2.如申請專利範圍第！項之發光裝置，其中，上述發光元 件係將大部分埋設在上述元件载置用貫穿孔，且使其上 面比上述絕緣基板表面高。 3·如申請專利範圍第！項之發光裝置，其中，上述發光元 件係利用導電糊或非導電糊固設在上述固設電極上，而 上述發光το件之第2電極係與由上述第2導電箱所形成 的背面安裝電極電性連接。 4.如申請專利範圍第〗項之發光裝置，其中，上述第1 及第2導電膜係由銅所構成，在上述固設電極疊層有鑛 鎳層、及鑛金或鑛銀層，利用上述賴層來提高上述固 設電極之硬度。 如申請專利範圍第4項之發光裝置，其中，在上述元件 載置用貫穿孔之内壁設有穿孔電鐘層，在該穿孔電錢層 上亦疊層有上述鍍鎳層、及上述鍍金或鍍銀層。 319288 31 5. 200843142 6. 如申請專利範圍第3項之發光裝置，其中，上述固設電 極係與上述取出電極及上述背面安裝電極形成一體，用 以傳遞來自上述發光元件之發熱。 7. 如申請專利範圍第5項之發光裝置，其中，上述穿孔電 鍍層上之上述鍍金或鍍銀層係共用作為上述發光元件 之反射器。 8.200843142, the scope of the patent application: i. A light-emitting device, comprising: a first conductive box and a second conductive flute disposed on two main surfaces of the insulating substrate; a through hole for penetrating the insulating substrate; and a bungee And the second conductive foil covering the bottom surface of the through hole; the light emitting element is fixed to the fixed electrode and embedded in the component mounting through hole of the insulating substrate; and is removed The electrode ' is connected to the first electrode of the light-emitting element formed of the first conductive film by a thin metal wire. 2. If you apply for a patent scope! In the light-emitting device of the present invention, the light-emitting element is largely embedded in the element-mounted through-hole and has an upper surface higher than a surface of the insulating substrate. 3. If you apply for a patent scope! The light-emitting device of the present invention, wherein the light-emitting element is fixed to the fixed electrode by a conductive paste or a non-conductive paste, and the second electrode of the light-emitting element and the back-mounted electrode formed by the second conductive case Electrical connection. 4. The light-emitting device of claim 1, wherein the first and second conductive films are made of copper, and a layer of ore, and a gold or silver layer are laminated on the fixed electrode. The above-mentioned layer is used to increase the hardness of the above-mentioned fixed electrode. The illuminating device of claim 4, wherein the inner wall of the component mounting through hole is provided with a perforated electric clock layer, and the nickel plating layer and the gold plating or the gold plating layer are laminated on the perforated electric money layer Silver plated layer. 6. The light-emitting device of claim 3, wherein the fixed electrode is integrally formed with the extraction electrode and the back surface mounting electrode for transmitting heat from the light-emitting element. 7. The light-emitting device of claim 5, wherein the gold plating or silver plating layer on the perforated electroplated layer shares a reflector as the light-emitting element. 8. 種發光裝置之製造方法，其特徵為具備： 準備在兩主面貼附有第i導電落及第2導電箱之 緣基板的步驟； 選f性去除形成預定之元件载置用貫穿孔的區域 之上述第1導電’將上述絕緣基板露出的步驟； d擇性乾_上述絕緣基板，㈣成上述元件载置 檢測上述第2導電箱之背面並停止乾钱 2'導“边：件载置用貫穿孔之底面形成露出有上述第 ¥包泊之背侧的固設電極的步驟； 利用牙孔電鍍在上述第丨導 述元:上載::貫穿孔之内壁形成穿孔電二:;驟:上 狀《形成電導成所期望之形 山电位月面女裝電極的步驟； 在上述取出電極、背面安裝電極 貫穿孔之内壁的空W戰置用 ^ 1黾鍍層、上述固設電極疊声形成棘 鎳層及鑛金或錢銀層的步驟； A成鍍 在士述元件载置用貫穿孔之底面 上固設發光元件的步驟； 319288 32 200843142 β .上'f =，細線來連接上述發光元件之第！電極與 上述取出電極的步驟； 利用透明樹脂來被覆上述發夯 線的步驟；及 4先凡件及上述金屬細 依各單元分割成個別之發光裝置的步驟。 其中 .如申請專利範圍第8項之發光裝置之製造方法 上述乾蝕刻係利用雷射蝕刻來進行。 10.:申：專利範圍第8項之發光裝置之製造方法，其中， =成^穿孔電鑛層的步驟中，利用除膠渣處理去除 電^^。载置用貫穿孔内之1 虫刻渣之後形成上述穿孔 U.二申：專利範圍第8項之發光裝置之製造方法，其中， ^第1導電&及第2導電11係由銅所構成，而上述穿 孔層亦由鍍銅所形成。 12. 2請專利範圍第8項之發光裝置之製造方法，其中， 早騎形成狹長方形，且複數個㈣呈行列狀。 319288 33A method of manufacturing a light-emitting device, comprising: preparing a substrate on which an i-th conductive land and a second conductive box are attached to both main surfaces; and removing a region in which a predetermined component mounting through-hole is formed a step of exposing the insulating substrate to the first conductive portion; d selectively drying the insulating substrate, and (4) detecting the back surface of the second conductive case by the component mounting, and stopping the dry money 2' a step of forming a fixed electrode on the back side of the first bobbin formed by the bottom surface of the through hole; and electroplating on the inner surface of the first guide element: uploading: through hole: forming a perforation electric 2: a step of forming an electric current into a desired shaped mountain potential moon-shaped female electrode; an empty W-war on the inner wall of the extraction electrode and the back-mounted electrode through-hole, and the above-mentioned fixed electrode stacked to form a spine a step of depositing a nickel layer and a gold or a silver layer; a step of fixing a light-emitting element on a bottom surface of the through hole for mounting the element; 319288 32 200843142 β. Upper 'f =, a thin wire connecting the above light-emitting element First a step of extracting the electrode and the above-mentioned electrode; a step of coating the hairline with a transparent resin; and a step of dividing the first member and the metal thin into individual light-emitting devices according to the unit. The method of manufacturing a light-emitting device is performed by laser etching. 10. The method for manufacturing a light-emitting device according to the eighth aspect of the invention, wherein, in the step of forming a perforated electric ore layer, the glue is removed. The slag treatment removes the electric power. The above-mentioned perforation is formed after the slag is slag in the through hole. The method for manufacturing the illuminating device of the eighth aspect of the patent, wherein, the first conductive & The conductive layer 11 is made of copper, and the above-mentioned perforated layer is also formed by copper plating. 12. The method for manufacturing a light-emitting device according to the eighth aspect of the invention, wherein the early riding forms a narrow rectangular shape, and the plurality of (four) are in a matrix shape. 319288 33
TW096121466A 2007-04-28 2007-06-14 Luminescence device and manufacturing method of the same TW200843142A (en)

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