TW200841337A - Optical information recording medium - Google Patents

Abstract

Provided is an optical information recording medium having a recording film where a recording mark is formed by applying an energy beam. The recording film is formed by a mixture of an In-based alloy and an oxide. The optical information recording medium is used as a currently used CD (Compact Disc), a DVD (Digital Versatile Disc), an HD DVD and a BD (Blu-ray Disc) as optical information recording media of the next generation, and in particular as a write-once type high-density optical information recording medium for which a blue-violet color laser is used.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording medium recording medium which can be used as a current Disc or DVD (Digital Versatile Disc) recording medium for HD DVD or BD. ( Blu - ray can be suitably used as a tracking information recording medium using a blue-violet laser. [Prior Art] Optical information recording media (CD-ROM) can be distinguished into a reproduction-only type, a rewrite type, and a write-on type according to the record. Among them, the write-once type optical disc mainly uses a recording film irradiated with a thunder (hereinafter, also referred to as a recording layer and a change in photophysical property, data is recorded. The write-once optical disc can be erased or rewritten by φ method. With such characteristics, CD The disc-type disc of -DVD + R can be used for the purpose of preventing the deletion of data such as image files. W Recording film, titanium cyanide dye, azo used in recordable optical discs It is known as an organic color such as a pigment. When the organic pigment material is irradiated with laser light, the pigment or substrate is decomposed, melted, evaporated, etc., and the organic pigment material is used. In order to dissolve the pigment on the substrate, there is a problem of low productivity. The CD of the present invention (Complete, the next generation of the light disc), in particular, the high-density optical recording and reproducing method of the recording type, 3 types. Energy beam recording film for light, etc.) Information recording of materials, but no R, DVD-R, such as document files, or materials, such as cyanide pigment materials, have been recorded for the heat absorption of human pigments. It must be coated after the solvent, and the length of the recording signal is -4-200841337. The stability of the organic pigment material is also problematic. In order to improve the weakness of such an organic pigment material, the inorganic material film is used as a recording film, and the film is irradiated with laser light. A method of recording by means of an opening method in which a recording mark (a hole, a hole, or the like) is formed locally has been proposed (Non-Patent Document 1, Patent Documents 1 to 9, etc.) Further, in addition to such an opening method (recording mark formation) In addition, there is also a method of recording by phase change of an inorganic material film (Te and Te oxide, etc.) or alloying (a laminated structure of Cu and Si, etc.). When a plurality of layers of inorganic material thin films are laminated by sputtering or the like, the production line becomes special, which is disadvantageous in terms of production cost. In this point, the above-mentioned opening method is formed by forming a recording film of an inorganic material film of two or less layers. The form of forming a single layer of an inorganic material film is disclosed in Patent Document 1, and the form of forming two layers has been disclosed in Patent Document 2, etc. However, this opening method is based on recording sensitivity. The method of recording the phase change or alloying of the inorganic material thin φ film has a lower problem. The local recording mark is formed by melting the inorganic material film of the recording film by laser light, and opening the hole and the hole. The way to wait. Therefore, it is necessary to raise the temperature " above the melting point of the inorganic material film, and it is necessary to have a high laser power. Further, when a high laser power is used, the inorganic material film is melted to open a portion such as a hole or a hole, and the melted film is liable to become a drop shape and remain. If the residual droplet-like molten film is present, which hinders the change in the reflectance of the recording mark portion, the problem that the modulation of the signal does not rise is still present -5-200841337. In order to improve such problems as the formation of local recording marks, various techniques have been proposed from the past. For example, in Non-Patent Document 1, a Te film having a low melting point and a low thermal conductivity is used, and a technique of opening a hole for recording marks with a low laser power has been disclosed. Patent Document 3, 4 discloses a light-based information recording film in which a reaction layer composed of a Cu-based alloy containing A1 and a reaction layer containing Si or the like are laminated on a substrate. In the optical recording film shown in these documents, it has been described that a region in which elements of each reaction layer are mixed is partially formed on the substrate by irradiation of laser light, whereby the reaction rate changes greatly, so that it is used. Short-wavelength lasers such as blue lasers are recorded with high sensitivity. Patent Documents 5, 6 and 9 disclose an optical information recording medium that prevents a C/N ratio of a signal to be recorded (cairrier - to - noise ratio: ratio of carrier to noise output) With a high signal C/N and reflectance, a Cu-based alloy containing In as a recording film (Patent Document 5), Bi-containing, etc.

An Ag-based alloy (Patent Document 6) and a Sn-based alloy containing Bi or the like (Patent Document 9). Patent Literatures 7 and 8 relate to an optical information recording medium using a Sn-based alloy, and Patent Document 7 discloses an optical information recording medium in which two or more kinds of elements which can be agglomerated in a heat treatment step are contained in an alloy layer. . Specifically, it is composed of Sn-containing a thickness of about 1 to 8 nm containing Bi or In.

The Cu-based alloy layer is composed of a light information recording medium having a high melting point and high thermal conductivity. -6 - 200841337 Patent Document 8 discloses a recording film in which an oxidizing substance which is more oxidized than Sn or Bi is added to Sn. gold having excellent recording characteristics, and it has been emphasized that it is excellent even in a high-temperature and high-humidity environment. Long-term. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Patent Document 5: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Patent Document No. 180114: JP-A-2002-22543 No. 3 Non-Patent Document 1: Appl. Phys. Lett., Vol. 34 ρ·8 3 5. [Disclosed] In recent years, in order to increase the density of recorded information, it has been developed to record and reproduce light information of short-wavelength laser light such as a color laser, and a recording film suitable for this technology is known. The characteristics of the following I (4) and other characteristics are required. (1) High-quality signals such as high-signal C/N (small noise in the background when reading) and low-jitter (signal position) are written and read. (2) High recording sensation - Bi Heguang Information Different resistance (1979) Recorded with blue and purple. With 1) ~ strong, the degree of difference (can be written in 200841337 with low power laser light). (3) High reflectance from the recording film. (4) High resistance to cockroaches. However, in the metal-based recording films of the conventional recording mark forming method described above, it is not possible to provide or sufficiently satisfy all of the above-described respective characteristics required, and it is difficult to put them into practical use. For example, in the above-mentioned Japanese Laid-Open Patent Publication No. Hei No. 2 - 1 7 8 8 7 , a mass of 55% by mass of In - 40% by mass of Sn - 5 mass% Cu is obtained (if converted into the original | sub%, 53.5 atom% In - 37.7) An atomic % Sn - 8.8 atomic Cu alloy) An optical recording film having a film thickness of 2 to 4 nm. However, in this optical recording film composition, it is difficult to obtain a practical signal C/N ratio. Further, the thickness of the alloy layer disclosed in this patent document is 2 to 4 nm. However, since the film composition is too thin in the above alloy composition, it is impossible to obtain a reflectance which is practical. Further, an optical recording film in which an oxidized substance which is more easily oxidized than S η or B i is added to a Sn - Bi alloy is disclosed in Japanese Laid-Open Patent Publication No. 2001-1801-14. However, in these alloys, the signal C/N ratio or the recording sensitivity exceeding the degree of the Sn-based alloy recording film of the present invention described below cannot be obtained. Further, an optical recording film made of a Sn bismuth-based alloy having an alloy composition of 84 at% Sn - 1 〇 atomic % Zn - 6 at % Sb has been disclosed in Japanese Laid-Open Patent Publication No. 2002-22543. However, even in the S η-based alloy, the signal C/N ratio, the recording sensitivity, and the reflectance which exceed the degree of the Sn-based alloy of the present invention to be described later are not obtained. However, the metal-based recording film has a large advantage as compared with the organic-based recording film as described above. Therefore, the development of a practical recording film that satisfies the above requirements with a metal-based material provides a BD (Blue ray Disc)-R or HD DVD (Digital Versatile Disc) that relies on the optical information recording medium of the -8 - 200841337. ) - R is extremely important to the user. Therefore, the present inventors have found that the characteristics of the above-described (1) to (4) are satisfied, and the reliability of recording accuracy is high, the cost is low, and a good record of the next generation blue-violet laser is used. In the recording film of the sensitivity opening method, an In alloy having a low melting point and a small environmental load is suitable. However, the recording film (optical information recording film) composed of the In alloy can obtain good recording characteristics, and since the recording sensitivity (opening sensitivity) is insufficient, it is necessary to compare the openings (recording). The problem of high laser power is clear. The present invention has been made in view of such a thing, and its object is to provide a hole (recording) which can be opened by a relatively low laser power, and has good recording characteristics, and further has good signal modulation. The optical information recording medium of the recording film. The optical information recording medium of the present invention for achieving the object is intended to have a recording film which forms a recording mark by irradiation of an energy beam, and is characterized in that the recording film is composed of a mixture of an alloy of In and an oxide. In the above, the preferred aspect is as follows. The In alloy in the recording film of the optical information recording medium preferably contains one or two kinds of Ni and Co in an amount of 1 to 65 atom%, and is composed of a residual portion in and an inevitable impurity. Further, the content of one or both of Ni and Co in the In alloy is preferably 50 atom% or less. Further, the content of one or both of Ni and Co in the In alloy is preferably 20% by atom or more. Further, the In alloy containing N1 200841337 and Co is further preferably one or more selected from the group consisting of Sn, Bi, and Si, and not more than 19 atomic % (excluding 0 atom%). Further, the oxide in the recording film of the optical information recording medium is preferably one selected from the group consisting of chopped, aluminum, and tantalum oxides, or a composite oxide of two or more kinds thereof. Further, it is preferable that the mixing ratio of the In alloy to the oxide in the recording film of the optical information recording medium is in the range of the volume ratio of the In alloy to the oxide (In alloy volume) / (oxide volume) in the range of 3 to 1 Torr. . According to the invention, the recording film of the optical information recording medium is composed of a mixture of the In alloy and the oxide of the dielectric component, and the thermal conductivity of the recording film (optical information recording film) of the mixture is controlled, and the control is controlled by the thunder. The spread of the heat invested by the shot can use energy efficiently. As shown in Fig. 7 to be described later, the recording film composed of the mixture of the In alloy and the oxide has a large thermal conductivity lower than that of the recording film formed of the In alloy. Thereby, the diffusion of heat by the laser of the recording film can be suppressed. Therefore, the φ recording film composed of a mixture of In alloy and oxide can be melted by a lower laser power, and a local recording mark (hole, hole, etc.) can be formed by a lower laser power. As a result, a recording film having good recording characteristics and further obtaining a better signal modulation degree can be obtained. (Best Mode for Carrying Out the Invention) Hereinafter, an embodiment of the overall configuration of the optical information recording medium (disc) of the present invention as a premise is exemplified using the drawings. Figs. 1 to 4 are diagrams showing a cross-sectional schematic view of an optical information recording medium of the present invention in which a recording film is irradiated with an energy beam such as laser light having a wavelength of about 350 to 700 nm, and can be recorded and reproduced in -10-200841337. Further, Fig. 1, Fig. 2(A), Fig. 3(B), and Fig. 4(B) and (D) show that the recording portion is convex, and Fig. 1, Fig. 2(B), Fig. 3 (A) and (A) and (C) of Fig. 4 indicate that the recording portion is concave. The optical disk 10 of FIG. 1 includes a recording substrate 4 sandwiched between a support substrate 1, an optical adjustment layer 2, dielectric layers 3 and 5, and dielectric layers 3 and 5, and a light transmission layer 6. The optical disc 10 of FIG. 2 includes a support substrate i, a second recording film group (a layer including an optical adjustment layer, a dielectric layer, and a recording film) 7A, an intermediate layer 8, and a first recording film group (including an optical adjustment layer, A dielectric layer, a layer of one of the recording films) 7B, and a light transmitting layer 6. 3 is a diagram showing a 1-layer DVD-R, a 1-layer DVD+R, a 1-layer HD DVD-R type optical disc, and FIG. 4 is a diagram showing a 2-layer DVD-R, a 2-layer DVD+R, and a 2-layer HD DVD-R type. CD. Symbol 8 denotes an intermediate layer, and symbol 9 denotes an adhesive layer. The layers constituting one of the 0th and 1st recording film groups 7A and 7B in Figs. 2 and 4 may be composed of only one layer of the recording film, in addition to the three-layer structure or the two-layer structure. For example, the three-layer structure is composed of a dielectric layer/recording film/dielectric layer, a dielectric layer/recording film/optical adjustment layer, a recording film/dielectric layer/optical adjustment layer, and the like from the upper side of the figure. Further, the two-layer structure is composed of a recording film/dielectric layer, a dielectric layer/recording film, a recording film/optical adjustment layer, an optical adjustment layer/recording film, and the like from the upper side of the figure. 200841337 (recording film composition) The optical information recording medium of the present invention is characterized in that the recording film 4 is formed of a mixture of an alloy of In alloy and SiO 2 , etc., on the premise of the configuration of the optical information recording medium. As will be described later, the density of the recorded information can be increased. In the optical information recording medium of the present invention, the recording film 4 composed of a mixture of an In alloy and an oxide is adjacent to each other to selectively have dielectric layers 3 and 5. In the case where the dielectric layers 3, 5 are provided, it is preferable to use an oxide selected from elements of Si, Mg, Ta, Zr, Mn, In or the like as a main component. The dielectric layers 3 and 5 composed of such oxides simultaneously control the function of the dielectric, and control the recording film 4 composed of a mixture of In alloy and oxide when the partial recording mark of the laser power is formed. Wettability. As a result, it is possible to suppress the localization of the melting residue or the hardened In of the above-described water droplet-shaped molten In at the time of formation of the local recording mark of the laser power, and to form a local recording mark favorably. Thereby, the modulation of the signal is prevented from being lowered. Further, the dielectric layer of the oxide such as the dielectric layer also protects the recording film 4 and also improves the dielectric function (effect) of the reflectance or the signal C/N ratio. As described above, the dielectric layers 3 and 5 are adjacent to a recording film 4 composed of a mixture of an In alloy and an oxide in order to exhibit wettability control or dielectric function of the recording film. Among them, the dielectric layer 3 is preferably located between the recording film 4 and the substrate 1. Further, the dielectric layer 5 is preferably located between the recording film 4 and the light transmitting layer 6. • 12-200841337 (In alloy) In the optical information recording medium of the present invention, the recording film 4 is composed of a mixture of an alloy of In and an oxide such as S i 〇 2 , but first, the composition of the In alloy is described. In the following. The melting point of pure In is 15 6.6 °C low melting point, the melting point is 66 0 °C Al, 962 °C Ag, 1 08 5 °C Cu is also obviously low melting point. Therefore, even if the lower laser power is low, the I η system can be melted and deformed, and the formation of the above-mentioned partial recording mark δ5 (hole, cave temple) is likely to be excellent. However, in the case of pure In, the above-mentioned melting point is too low, and when the above-mentioned local recording mark is irradiated by laser, the recording film around the non-irradiated laser is also melted, and as a result, the possibility that the marking property is deteriorated is high. Further, the surface roughness of the formed recording film is roughened, and there is also a lack of reflectance, sensitivity or environmental resistance.

In the case of pure In, one or two of Ni and Co are contained, and In alloying is performed, and the melting point of bismuth as the In alloy is appropriately improved and optimized, and the marking property is improved. In this case, the composition of the In alloy is preferably one or two kinds of Ni and Co of 1 to 65 atom%, and is composed of a residual portion In and an inevitable impurity. Here, the upper limit of the content of one or both of Ni and Co is preferably 50 atom%. Further, the lower limit of the content of one or both of Ni and Co is preferably 20 atom%. That is, the range of one or both of Ni and Co is in the range of 1 to 65 atomic %, preferably 1 to 50 atom%, or 20 to 65 atoms. The narrow range of % is more preferably a narrow range of 20 to 50 atom%. Even in such a content of one or both of Ni and Co, the composition of the In alloy is composed of the residue In and the inevitable impurities. The Group 8 element of the periodic table having such an effect may be, in addition to Ni and Co, Fe, Rh, Pd, Os, Ir, Ni, Co, Pt or the like. But _ compared to these elements, the effect of Ni and Co is significantly greater. Further, it is acceptable to contain the above-mentioned Fe, Ru, Rh, Pd, Os, Ir, Pt or the like as an (inevitable) impurity. The total content of one or both of the right Ni and Co is out of the above range. A slight excess. As in the case of pure In, the surface roughness of the formed recording film becomes coarse, and the reflectance, sensitivity or environmental resistance is lowered. In addition, the total content of one or both of Ni and Co is too large in the above range, and since the melting point of the Ni and Co elements is high, the melting point of the In alloy recording film becomes high, and the mark of the low laser φ power is high. The significance of using In alloy is reduced.

Sn, Bi, Ge, Si: • Further, the composition of the In alloy is one or more of Ni and Co contained in In, and further contains one selected from the group consisting of Sn, Bi, Ge, and S i or Two or more kinds of 9% atomic % or less (excluding 〇 atomic %). By including these Sn, Bi, Ge, and si in addition to m and Co, 値 can further reduce jitter. This mechanism is not necessarily clear, but Sn, Bi, Ge, and Si systems, $ stomach ϋ stomach melt point to achieve the low-thermal conductivity of the transverse direction of heat -14-200841337 penetration inhibition. In this case, the composition of the In alloy contains one or two kinds of Ni and C, and is 1 to 65 atomic %, and further contains one or more of Sn, Bi, Ge, and Si, and is not more than 9% by atom. 'and consists of the residual part In and the inevitable impurities. At this time, the content of one or both of Ni and Co may be made narrower in the above preferred ranges. (Recording film mixture composition) In the optical information recording medium of the present invention, the recording film 4 is composed of a mixture of such an alloy of In and oxide. By mixing the In alloy and the oxide, the thermal conductivity of the recording film 4 is controlled, and the oxide is not mixed, and the diffusion of the heat input by the laser is suppressed as compared with the case of the recording film 4 of only the In alloy. Use energy more efficiently. The oxide layer is preferably one selected from the group consisting of ruthenium, aluminum, and ruthenium which are commonly used as a dielectric layer component, or a composite oxide of two or more kinds thereof. . In other words, it is preferably one (separate) or two or more (complex) composite oxides selected from oxides such as SiO 2 , Al 2 〇 3, NbO, NbO 2 and Nb 205. Therefore, in addition to the oxide used as the dielectric layer component, an oxide selected from the group consisting of Mg, Ta, Zr, Mn, In, and the like can be used. However, among these, 'the alloy is mixed with the In alloy, and the thermal conductivity of the in-alloy film is lowered, and the effect of forming the recording film 4 having the functions of the dielectric layers 3 and 5 is high, and the tantalum, aluminum, and tantalum are used. Oxide. In the present invention, if the In alloy is mixed with an oxide such as SiO 2 or the like, the thermal conductivity of the recording film 4 of the mixture becomes lower than that of the ITO alloy alone, -15 - 200841337. Therefore, the diffusion of the heat thrown by the laser is suppressed, and the energy for locally recording the mark formation can be used efficiently. As a result, compared with the case where only the recording film 4 of the In alloy is formed, a mixture of the In alloy and the oxide of the dielectric component can be melted by a lower laser power, and a local recording mark can be formed. As a result, compared with the case where only the recording film 4 of the In alloy is formed, a recording film having good recording characteristics and a better signal modulation degree can be obtained. That is, the recording film 4 composed of a mixture of both of the In alloy mixed oxides can be melted and deformed even if the lower laser power is lower, but the recording film around the unexposed laser is not melted. Form a proper melting point. Then, this effect can exhibit low laser power marking properties of laser light of various wavelengths used for the marking property of 8 10 nm to 4 5 5 nm. Further, it is characterized in that the surface roughness of the recording film can be suppressed to a small extent, and a range of film thickness of a recording film to be described later can be obtained, and high reflectance, high sensitivity, and high environmental resistance can be obtained. In other words, by forming the recording film 4 composed of a mixture of an alloy of In and oxide, it is also possible to form the recording film 4 in which the dielectric layers 3, 5 and the recording film 4 are mixed. As a result, it is also possible to form a recording film 4 having a function of the dielectric layers 3 and 5. Therefore, the recording and reproducing technology suitable for short-wavelength laser light information such as blue-violet lasers can ensure high density of recorded information. Specifically, it is possible to write (1) high-quality signals such as high signal C/N ratio, low jitter, and the like, and (2) high recording sensitivity, and (3) high reflection from the recording film. Rate, (4) high corrosion resistance, etc. are possible. Further recording accuracy is high in reliability and low in cost, and the shape is -16-200841337 into a practical recording film. In order to obtain the result of the temple, it is preferable that the mixing ratio of the I η alloy and the oxide of S i Ο 2 in the δ3 recording film 4 (for the mixing ratio of the oxide of the I η alloy), the In alloy and the oxide The volume ratio (In alloy volume) / (oxide volume) is in the range of 3 to 10 0. When the mixing ratio of the oxide becomes larger than the above volume ratio of more than 1 Torr, the amount of the oxide in the recording film 4 is too small, and there is no effect of reducing the above thermal conductivity. Therefore, the difference from the case of the In-alloy recording film 4 alone becomes large, and a recording film having a better signal modulation degree cannot be obtained while maintaining good recording characteristics. Further, when the mixing ratio of the oxide becomes as small as less than 3, the amount of the oxide in the recording film 4 is too large, and the thermal conductivity of the recording film 4 becomes small. Therefore, on the contrary, the laser power required for local recording mark formation becomes high, and the signal quality becomes low. When the mixing ratio of the oxide is increased, the help of the oxide of the entire recording film 4 is increased. Therefore, the recording mechanism is the melting of the In alloy recording film 4, and the opening method disappears (changes). Good signal quality (signal C/N ratio). (recording film thickness) The recording film 4 composed of the mixture of the above In alloy and oxide forms a recording film of stable accuracy and reliability, depending on the structure of the optical information recording medium, but it is also possible to form a thickness of 1 to 5 The range of 〇nm. The recording film composed of a mixture of In alloy and oxide in this thickness range 4'--17-200841337, especially for laser light having a wavelength of 3 50 to 700 nm, exhibits high recording sensitivity' Optical recording media with write and read accuracy. When the thickness of the recording film is less than 1 nm, the optical recording film is too thin. If an optical adjustment layer or a dielectric layer is provided on the upper or lower portion of the optical recording film, the film surface of the optical recording film is easy. Defects such as holes are generated, and it is difficult to obtain a satisfactory recording sensitivity. On the other hand, if it is too thick beyond 50 nm, the heat imparted by the irradiation of the laser light is rapidly spread in the recording film, and formation of the recording mark becomes difficult. When the thickness of the recording film is preferably from the viewpoint of the reflectance of the optical disk, when the dielectric layer or the optical adjustment layer is not provided, it is 8 nm or more and 30 nm or less, more preferably 12 nm or more and 20 nm or less. When there is a dielectric layer or an optical adjustment layer, it is 3 nm or less and 30 nm or less, and more preferably 5 nm or more and 20 nm or less. (Dielectric Layer) As described above, the recording film 4 composed of the mixture of the In alloy and the oxide of the present invention can be said to form the recording film 4 in which the dielectric layers 3 and 5 and the recording film 4 are mixed. A recording film 4 having a function of the dielectric layers 3, 5 is formed. Therefore, it is also possible to provide a state in which the dielectric layers 3, 5 are not provided. In this case, when the dielectric layers 3 and 5 are selectively provided, it is preferable to provide the dielectric layer 3 composed of an oxide of a specific halogen selected from Si'Al, Nb, Mg, Ta, Zr, Μ, and In. , 5. Such suitable oxide systems can be exemplified -18- 200841337

Si02, Al2〇3, NbO, Nb02, Nb205, MgO, Ta205, ZrO2, M n O 2, I η O Temple. The dielectric layers 3 and 5 composed of oxides of such elements control the wettability of the In-based alloy recording film 4 at the time of formation of a partial recording mark of laser power as described above, and suppress the modulation of the signal. The reduction. The dielectric layers 3 and 5 protect the recording film 4 in terms of the dielectric layer, thereby having a reflectance or a signal C/N ratio in addition to greatly increasing the storage interval of the recorded information (the durability is improved). Also improve the effect. Further, the dielectric layer 3 and the 5 dielectric layer composed of oxides of such elements are not only composed of oxides of such elements, but also do not hinder the formation of the dielectric layer and the dielectric layer. The range of the effects of the invention allows the dielectric layer to contain an oxide or the like other than the oxide of these elements as an impurity. Of course, if possible, a substantial dielectric layer can be formed only from the oxides of such elements. (Dielectric Layer Thickness) The thickness of the dielectric layers 3 and 5 is to suppress the above-mentioned signal modulation degree, and is also dependent on the structure of the optical information recording medium, but the thickness is preferably 5 to 200 nm. The range is more preferably in the range of 10 to 150 nm. When the thickness is less than 5 nm, the thickness of the dielectric layer is too thin, so that even if a dielectric layer is provided, the above effects are not exerted. In addition, even if it is too thick, the effect is not improved, and if it is too thick, it does not benefit from the productivity reduction of the optical information recording medium, so it does not need to be thicker than 200 nm. The means for forming the oxide layer of the specific element is also not particularly limited, but a sputtering method is preferred as a method of -19-200841337. (Preferred Conditions or Structure as Optical Information Recording Medium) Hereinafter, other preferred conditions, structures, and manufacturing methods for the optical information recording medium of the optical information recording medium of the present invention will be described. A material for supporting a substrate or the like: The optical disk of the representative embodiment of the present invention includes the dielectric layer 3 and 5 when the oxide layer of the specific element other than the recording film 4 is not used, and the support substrate 1 is provided. The material of the optical adjustment layer 2 or the like is particularly limited, and can be appropriately selected and used by a general user. The material for supporting the substrate can be suitably used for a polycarbonate resin (also referred to as a P C substrate), a norbornene resin, a cyclic olefin copolymer, an amorphous polyolefin or the like which is widely used. As the material of the optical adjustment layer, Ag, Au, Cu, Al, Ni, Cr, Ti, or the like, or the like can be suitably used. Laser light wavelength: 'The preferred wavelength for laser light for recording is 3 50~.700 ' nm range. When it is less than 350 nm, the absorption of light by the cover layer (light transmission layer) becomes significant. It is difficult to write and read the film. On the other hand, if the wavelength exceeds 700 nm and becomes too large, the energy of the laser light is lowered, so that formation of a recording mark on the optical recording film becomes difficult. From such a point of view, the wavelength of the laser light used for information recording is more preferably 305 nm or more and less than 660 nm, more preferably 380 nm or more and 65 0 nm or less. -20- 200841337 Sputtering = The composition of the sputtering target used for the formation of the above-mentioned recording film or dielectric layer, the desired alloy composition or oxide of the above-mentioned recording film or dielectric layer can be used. The composition is basically the same. In other words, by making the composition of the sputtering target the same as the alloy composition or oxide composition of the above-mentioned recording film or dielectric layer, the recording film or dielectric layer 0 formed by sputtering is formed into a desired alloy composition. Or oxide composition. For example, the recording film composed of the mixture of the In alloy and the oxide of the present invention is an oxide target of an individual I η alloy mark and Si Ο 2, respectively, and becomes a specific mixing ratio of the above-mentioned recording film, The sputtering conditions are controlled by sputtering (co-sputtering), DC sputtering, or RF sputtering, respectively. Further, a single sputter target in which an oxide such as S i Ο 2 is preliminarily mixed in a specific mixing ratio of the above-mentioned recording film in an In alloy is produced by φ D c sputtering or RF sputtering. The recording film of the present invention can be formed by sputtering. ~ Even if the In alloy and the oxide are uniformly dispersed and mixed by the sputtering method of any of the above, the film of the present invention can be homogenized by forming a film of the mixture. When the sprinkling IE is manufactured, the gas component (nitrogen, oxygen, etc.) or the melting furnace component in the environment is a small amount and mixed with the sputtering target as a impurity. However, the component composition of the recording film or the sputtering target of the present invention is not limited to such a small amount of components which are inevitably mixed, and as long as the above characteristics of the invention are not inhibited, the above-mentioned characteristics of the present invention are insignificant. The mixing system is allowed. The present invention will be more specifically described by the following examples, but the following examples are not intended to limit the nature of the present invention, and may be modified as appropriate without departing from the scope of the present invention. The system is included in the technical scope of the present invention. [Embodiment] _ Example (Embodiment 1)

The signal modulation degree and the signal C/N ratio of each recording film composed of a mixture of an In alloy and an SiO 2 oxide were evaluated. Specifically, the optical disc 1 of the type shown in FIG. 1 is tried, and the recording film 4 is placed on the support substrate 1 and the light transmitting layer 6 is sequentially provided with two layers, and the signal reading of the optical disc is evaluated. Signal modulation, signal C/N ratio. The results are shown in Fig. 5 and Fig. 6. Further, the thermal conductivity of each of the recording films composed of the alloy φ of the In alloy and the SiO 2 of the oxide was measured. This result is shown in Figure 7. Further, in Figs. 5 and 6, the line connecting the rhombic symbols is the first invention example, the line connecting the tetragonal symbols to the number is the invention example 2, the line connecting the triangle symbols is the comparative example 1, and the line connecting the x v symbols is a comparative example. 2. Inventive Examples 1 and 2 in Figs. 5, 6, and 7 are recording films each having a mixture of an appropriate amount of In alloy and SiO 2 as described later. Further, Comparative Example 1 is a recording film composed only of an In alloy, and Comparative Example 2 is a recording film having a too large amount of SiO 2 mixed. 5, 6, and the recording film comprising a mixture of an appropriate amount of In alloy and Si〇2, the present invention 1, 2 series-22-200841337 is compared with the above Comparative Example 1 or Comparative Example 2, about 8 mW The laser power of course is lower than the laser power of about 5 mW, the signal modulation or the C/N ratio is high. As shown in Fig. 7, in the recording film of Comparative Example 1 in which the recording film was composed of a mixture of In alloy and SiO 2 as compared with the recording film of Comparative Example 1 in which only In alloy was used, it was confirmed that the thermal conductivity was largely lowered. The production methods of the optical discs of the first and second or comparative examples 1 and 2 are shown below. However, in the laminated structure of the optical disc, the recording film 4 directly provided on the surface of the support substrate 1 is provided. A light transmission layer 6 is disposed on the recording film 4, and the optical adjustment layer 2 or the dielectric layer 3 is not provided. Inventive Example 1: A polycarbonate substrate is used as the support substrate 1 shown in FIG. 1 (1.1 mm, track The pitch is 0.32 // m, the groove width is 0.16 # m, and the groove depth is nm). On the surface of the substrate, a film of In - 25at%Ni, which is relatively thick by 12 nm, is formed by co-sputtering DC sputtering, and a relatively thick 1.5 nm Si is formed by RF sputtering. 〇 2. Then, the mixing ratio of the In alloy/Si 2 dielectric was changed to 8 ··; [the recording film 4 having a total film thickness of 13.5 nm. Further, in the present embodiment, the film composition of each of the target film formation or the film formation of the formed film was measured by ICP emission spectrometry or ICP mass spectrometry. The sputtering conditions for forming the recording layer 4 are vacuum degrees: 1 Torr or less (lTorr = 133.3 Pa), Ar gas pressure: 1 mTorr, DC plating film power, and RF sputtering film forming power are 50 W and 45, respectively. W, the method of the rate number is 25 mm thick and the shape is formed by the 0'5 sputter setting -23-200841337. The ratio of the film formation rate becomes DC: rF = 8:1. Then, on the recording film 4, an ultraviolet curable resin (manufactured by Kumamoto Chemical Co., Ltd., trade name: "BRD-130") was spin-coated, and ultraviolet rays were cured to form a light-transmitting layer 6 having a film thickness of 10 ± 15 mm. EMBODIMENT 2 In the invention example 2, the same (conditional) polycarbonate substrate as in the first invention was used, and the surface of the substrate was formed in the same manner as in the first embodiment by DC sputtering using w-sputtering. An In alloy film of In-25at%Ni having a thickness of 12 nm was formed, and a SiO2 film having a thickness of 3 nm was formed by RF sputtering in the same manner as in Inventive Example 1. Then, a mixing ratio of In alloy/SiO 2 dielectric was formed. The recording film 4 having a total film thickness of 1 5 nm in a volume ratio of 4 is used to form a recording film 4, and the sputtering condition is such that the degree of vacuum reaches: 1 〇 _ 5 Torr or less, Α: gas pressure: 1 mTorr, DC sputtering The film forming power and the RF sputtering φ plating film power were 50 W and 45 W, respectively, and the film formation ratio was set to DC: RF = 4: 1. Then, the same light transmission as in Inventive Example 1 was formed on the recording film 4. Layer 6. Comparative Example 1 Comparative Example 1 used the same (conditional) polycarbonate substrate as in the first embodiment. On the surface of the board, in the same manner as in Inventive Example 1, an In alloy recording film 4 of only -25 at% Ni of a relatively thick thickness of 12 nm was formed by DC sputtering to form a sputtering condition of the recording film 4. The degree of vacuum reached: 1 (Γ5 Torr or less, Ar gas pressure: 1 mTorr, and sputtering film formation power: 50 W. Then, the same light transmission layer 6 as in Inventive Example 1 was formed on the recording film 4. Comparative Example 2 Comparative Example 2, the same (conditional) polycarbonate substrate as in Inventive Example 1 was used. On the surface of the substrate, in the same manner as in Inventive Example 1, a relatively thick 12 nm In - 25 was formed by co-sputtering DC sputtering. At the same time as in Inventive Example 1, an In alloy film of at%Ni was used to form a SiO 2 film having a thickness of 6 nm by RF sputtering. Then, a mixing ratio of the In alloy/Si 2 dielectric was formed in a volume ratio. 2: 1 of the recording film having a total film thickness of 18 nm. The sputtering condition for forming the recording film 4 reaches a degree of vacuum: 1 (Γ 5 Torr or less, Ar gas pressure: 1 mTorr, DC sputtering film forming power, and RF) The sputtering film formation power is 50 W and 180 W, respectively, and the film formation ratio is set to DC: RF = 2: 1. Then, on the recording film 4 The light transmission layer 6 was formed in the same manner as in the first embodiment. The signal modulation degree evaluation of the optical disk of Fig. 5 is shown in Fig. 5 in the invention examples 1, 2 and the comparative examples 1, 2, respectively, in the respective optical information recording media. Record the relationship between the laser power and the signal modulation. This measurement uses an optical disc evaluation device (ODU - 1 000" (trade name) manufactured by Pulstec Industries, Inc., recording laser wavelength: 405 nm, NA (number of openings) :〇· 8 5 ) With a digital oscilloscope (manufactured by Yokogawa Electric Corporation, 商-25- 200841337, the product name "DL 1 640L", the signal modulation degree is measured. More specifically, in the range of 4 mW to 12 mW, the recording mark is formed at a line speed of 4.9 m/s 0.6 0 // m, and the signal modulation at the time of reading the signal of the laser power 测定 is measured. Also, the signal modulation is obtained by the signal (signal strength signal min) / (signal strength max) X 1 〇〇 (unit. / to the desired recording characteristics, it is generally considered that the signal modulation must be on. The signal C/N ratio evaluation of the optical disc of Fig. 6 is shown in Fig. 6 for the relationship between the recorded laser power and the signal in the inventive examples 1, 2 and the comparison in the respective optical information recording media. The signal modulation measurement of the optical disc of Figure 5 is the same as the optical disc evaluation device (ibid.) and the optical spectrum analyzer (manufactured by Advan, trade name "R3131A", measuring signal C/N (units specifically from laser power 4 mW to 12) In the range of mW, the recording mark of the J m/s repeat length of 0.60 /zm is formed, and the frequency component of 4.12 MHz when the signal is read in 0.3 mW is used as the carrier (in dB) to form the intensity before and after the frequency. The ratio of noise (in dB) is the signal C/N dB. 〇 In addition, in order to obtain the desired recording characteristics, it is considered that the C/N ratio of the optical disc must be at least 45 dB or more. mW moderate max - ί)), which is 50% for example 1, 2, C/N ratio From time to time, so t e s t company dB). 4 wire speed 4.9 laser power 丨 signal strength: sub-signal ratio (unit: -26-200841337 of the same signal Figure 5, 6 detailed evaluation results from Figure 5, 6, in the recording film formed only with In alloy In Comparative Example 1, the necessary laser power is recorded, that is, the laser power with a modulation degree of 50% or more and a signal C/N ratio of 45 dB or more must be 7 to 8 mW. However, it can be known that In the invention examples 1 and 2 of the recording film comprising the mixture of the alloy and the Si 02, the laser power is 6 mW or less, the signal modulation degree is 50% or more, and the signal C/N ratio is 45 dB or more. The recording sensitivity can be greatly improved by forming the In alloy/SiO 2 mixed recording film. Further, from Fig. 5 and Fig. 6, the mixing ratio of the In alloy volume/oxide volume is as high as 2 for the mixing ratio of the SiO2 of the In alloy. In Comparative Example 2, the signal modulation degree shows good characteristics. In addition, the signal C/N ratio is only less than 45 dB in the total recording power. From this result, the mixing of SiO2 for In alloy is proved. When the ratio is more than a certain level, the opposite is true, the quality of the signal is reduced. Therefore, the mixing ratio of the SiO2 of the In alloy is such that the volume ratio of the In alloy to the oxide, that is, the (In alloy volume) / (oxide volume) is suitably in the range of 3 to 10. The heat conductivity evaluation of Fig. 7 is shown in Fig. 7. The thermal conductivity evaluation results of the invention examples 1 and 2 and the comparative example 1 were determined by measuring the electrical conductivity of each recording film from the 4-terminal method to the basis of the Wiedemann-Franz rule of the following formula 1, using the conversion to the thermal conductivity. -27 - 200841337

Κ / σ = LT (Formula 1), but κ: thermal conductivity (w/m · Κ ), σ · · electrical conductivity (S / m), L: Lorenz number (2.45xl0 · 8 WQ / k2), T : Absolute temperature (K). As shown in Fig. 7, in the inventive examples 1 and 2 of the recording film composed of the mixture of the In alloy and the SiO 2 , the thermal conductivity was significantly lowered as compared with the recording film of Comparative Example 1 in which only the In alloy was formed. Thereby, the recording film composed of the mixture of the In alloy and the SiO 2 suppresses the diffusion of the heat input by the laser, and can form a partial recording mark with a lower laser power. As a result, as described above, the effect of the recording film which can obtain good recording characteristics while further obtaining good signal modulation is proved. (Example 2) The signal modulation degree and the signal C/N ratio composed of a mixture of an In alloy and an oxide of Al2〇3 and Nb205 were measured and evaluated. Specifically, the optical disk 10 of the type shown in FIG. 1 is simulated in the same manner as in the first example, and the recording film 4 is placed on the support substrate 1 and the light-transmitting layer 6 is sequentially provided with two layers thereon. The signal modulation and signal C/N ratio of the signal read by this disc. + the result, as shown in Figs. 8 and 9, the invention 3 having a recording film composed of a mixture of an appropriate amount of the In alloy of the present invention and Al2〇3, having a mixture of an appropriate amount of the In alloy and Nb2〇5 The recording film of the present invention is superior to the comparative example 1 of the recording film composed of the in alloy (the same as in the first embodiment), and the signal modulation degree or the signal C/N ratio is excellent. In Fig. 8 '9, the line connecting the rhombic symbols is revealed again (the same as in the case of the actual -28-200841337 embodiment 1), the line connecting the square symbols is the invention example 3, and the line connecting the triangle symbols is the invention example 4. The line connecting the X symbols is the comparative example 1 °. The manufacturing methods of the optical disks of the invention examples 3 and 4 are respectively shown below. However, the laminated structure of the optical disk is the same as that of the first embodiment, and the optical adjustment layer 2 or the intermediate layer is not provided. Electrical layer 3, 5. Inventive Example 3: Inventive Example 1 A polycarbonate substrate having the same (condition) as in Inventive Example 1 was used. On the surface of the substrate, in the same manner as in Inventive Example 1, an In alloy film of In - 2 5 at %Ni having a thickness of 12 nm was formed by co-sputtering DC sputtering, and by RF sputtering. A relatively thick 3 nm Al2〇3 film is formed. Then, the mixing ratio of the In alloy/Al2〇3 dielectric was formed to the recording film 4 having a total film thickness of 5 nm as described above. The sputtering conditions similar to those of Inventive Example 1 in which the recording layer 4 was formed were as follows: vacuum degree··1〇·5Τογγ or less (iT〇rr=133.3Pa), Ar gas pressure: 1 mTorr, DC sputtering film formation power, and RF The sputtering film formation power was 50 W and 100 W, respectively, and the film formation ratio was set to DC: RF = 4:1. Then, the ultraviolet curable resin (trade name: "BRD-130", manufactured by Nippon Kayaku Co., Ltd.) was spin-coated on the recording film 4, and ultraviolet rays were cured to form a film thickness of the same as in the first embodiment. // The light of m passes through layer 6. Inventive Example 4: The same (conditional) polycarbonate substrate as in Inventive Example 1 was used. In the surface of the substrate of the -29-200841337, in the same manner as in the first embodiment, an In alloy film of In - 25 at% Ni having a thickness of 12 nm was formed by a co-sputtering DC sputtering method, and the same manner as in the first invention. A relatively thick 3 nm Nb205 film was formed by RF sputtering. Then, the mixing ratio of the In alloy/Nb205 dielectric was formed to be the recording film 4 having a total film thickness of 5 nm as described above. The sputtering conditions for forming the recording film 4 are such that the degree of vacuum is 1 (Γ5 Torr or less, Ar gas pressure: 1 mTorr, DC sputtering film forming power, and RF sputtering film forming power are 50 W and 40 W, respectively, and is set to The film formation ratio was DC: RF = 4: 1. Then, on the recording film 4, the same light transmission layer 6 as in Inventive Example 1 was formed. The signal modulation degree evaluation and optical disc of the optical disks of the invention examples 3 and 4. The signal C/N ratio evaluation was carried out under the same conditions as in Example 1. The detailed evaluation results of Figs. 8 and 9 are shown in Figs. 8 and 9, and the recording film composed of a mixture of In alloy and Al2〇3 or Nb205 is known. In Inventive Example 3 and Invention Example 4, the laser power is 6 mW or less, the signal modulation degree is 50% or more, and the signal C/N ratio is 45 dB or more. That is, it is proved that by forming In alloy/Al2〇3 or The Nb205 mixed recording film can greatly improve the recording sensitivity compared to Comparative Example 1 in which only the In alloy is used. The results of Examples 1 and 2 using the above oxides of SiO 2 , Al 2 〇 3 , and Nb 205 are inferred even if other Other oxides such as NbO, Nb02 or MgO, Ta205, Zr〇2, Μη02, InO, etc. of the bismuth oxide may be the same -30 - 200841337 (Example 3) The effect of adding an oxide of an In alloy having a composition different from those of Examples 1 and 2 was evaluated. Specifically, in the same manner as in Examples 1 and 2, the simulation of Fig. 1 was carried out. In the optical disc 10 of the type shown, the recording film 4 is placed on the support substrate 1 and the light transmitting layer 6 is sequentially provided with two layers, and the signal modulation degree when the signal reading of the optical disc is evaluated is measured, and the signal C/ is measured. N. The results are shown in Figures 10 and 11. (Evaluation Results) The relationship between the recorded laser power and the signal modulation degree in Invention Example 5 and Comparative Example 3 and the respective optical recording media is shown in Fig. 10 The relationship between the recorded laser power and the C/N ratio of the signal is shown in Fig. 11. In Fig. 1 〇, 1 1 , the line connecting the black dots is the invention example 5, and the line connecting the * symbols is a comparison. Example 3. From the comparison example 3 of the recording film formed of only the In alloy, the necessary laser power, that is, the signal modulation degree of 50% or more and the signal C/N was recorded from the figures 10 and 11. The laser power of 45 dB or more must be 7 mW. However, it is known that the recording film composed of a mixture of In alloy and SiO 2 is emitted. In the case of the fifth example, the laser power is 6 mW or less, the signal modulation degree is 5 〇% or more, and the signal is more than 45 (! 8 or more. That is, as in the present invention, it is proved that the In alloy/SiO 2 mixed recording is formed by the present invention. The film can greatly improve the recording sensitivity. Even if the composition of the In alloy is different, if it is within the composition range of the present invention, the invention is compared with the comparative example of the recording film composed only of In-31 - 200841337 gold, 8 The laser power around mW, of course, even with a lower laser power of about 5 mw, the signal scheduling or the signal C/N ratio can be obtained. Inventive Example 5: A substrate 1 was a polycarbonate substrate having the same conditions as in Inventive Example 1. On the surface of the substrate, a Co-containing In alloy film of a thickness of 12 nm is formed by DC sputtering, and a relatively thick SiO 2 film of 1.5 nm is formed by rf sputtering. Membrane (total sputter). Then, a recording ratio of the In alloy/SiO 2 dielectric was formed to a recording film 4 having a total film thickness of 1 3.5 nm in a volume ratio of 8:1. The sputtering conditions for forming the recording layer 4 are such as to reach a degree of vacuum (T5Tori* or less, Ar gas pressure··1 mTorr, DC sputtering film forming power, and RF sputtering film forming power are 100 W and 90 W, respectively). The film formation rate ratio was set to DC: RF = 8: 1. Then, the light transmission layer 6 was formed on the recording film 4 under the same conditions as in Inventive Example 1. Comparative Example 3: Using the same conditions as in Invention Example 1 A polycarbonate substrate was formed on the surface of the substrate by the DC sputtering method to form a recording film 4 of only Mn alloy of In - 40 at% Co having a thickness of 12 nm as in the case of Inventive Example 5. The sputtering condition of 4 is the vacuum degree: i or less, Ar gas pressure: 1 mTorr, DC sputtering film forming power is 1 〇〇 w. Then, on the recording film 4, the same light transmission layer 6 as in Invention Example 1 is formed. -32 - 200841337 (Example 4) Investigating the influence of the composition of the In alloy in the recording film 4 of the optical disc, in the present investigation, since only the influence of the composition of the In alloy was investigated, the mixture of the In alloy and the oxide of the present invention was used. The recording film formed was not formed, but was tested with a recording film composed only of an In alloy. The composition of the In alloy of various recording films was changed, and the recording characteristics and the signal g-variation were evaluated. The results of this temple are not shown in Tables 1 and 2. The production of the optical disc: The same as in the inventive example 1 (conditions Polycarbonate substrate. On the surface of the substrate, a recording film 4 was formed by DC magnetization beach plating in the same manner as in Inventive Example 1. The sputtering target was used to place an additive element on a 6-inch diameter In target. The composite target of the wafer (5mm angle or l〇mm angle). The sputtering condition is the degree of vacuum: 3x1 (Γ6Torr or less, Ar gas pressure: φ 2 mTon*, DC beach plating film power system 100W. Film thickness system BD The SUM2 signal (the output signal related to the reflectance) of the unrecorded state of the -R disc ensures that the film thickness of 280 mV or more is adjusted in the range of 12 to 21 nm (also not in the alloy of the comparative example). After ensuring 280 mV or more, the UV-curable resin (trade name "BRD-130" manufactured by Nippon Kayaku Co., Ltd.) is applied thereto, and the ultraviolet rays are hardened to form a film having a film thickness of 10 ± 15 / / m. Pass through layer 3.

The disc evaluation method uses an optical disc evaluation device ("ODU-1 000" manufactured by Pulstec Industries, recorded laser wavelength: 405 nm, NA -33-200841337 (number of openings) · · 0.85), and an optical spectrum analyzer (Ad van) The product name "R313R" manufactured by test company. At this time, the line speed is 4.9 m/s, the SUM2 degree of the unrecorded state, and the recording mark of the repetitive length of 0.60 // m in the range of the laser power of 4 mW to 12 mW (corresponding to the 8T of the 25 GB Blu-ray Disc) The signal is formed to evaluate the maximum C/N値 of the signal regeneration when the signal in the regenerative laser power 〇·3 mW is read. In addition, a time interval analyzer (trade name TA520, manufactured by Yokogawa Electric Co., Ltd.) was used, and the shortest length was 〇.15/zm to 0.075//m unit from the range of recording laser power of 4 mW to 12 mW to the longest length. A recording mark of a length of 0.6//m (corresponding to a 2T to 8T signal of a 25-GB Blu-ray Disc) is randomly repeated to evaluate the jitter (jitter). The evaluation of the jitter 系 is recorded continuously after 3 tracks, and the signal of the center track is referred to as “jitter 値 (for continuous 3 track recording)”. At the same time, the "shock 値 (during continuous track recording)" becomes the minimum 记录 record. The laser power is also evaluated. Table 1 shows the degree of SUM2 and the 8T signal in the unrecorded state in the optical information recording medium of the embodiment (invention example) of the embodiment in which the In alloy of the recording film 4 of the optical disc contains Ni or Co, and the comparative example. A table of C/N値 at the time of reproduction is recorded. Here, each of the examples of Tables 1 and 2 is the meaning of the embodiment of the recording film composed only of the In alloy in the composition range of the present invention in Tables 1 and 2, and the In Examples 1 to 3 described above. The recording film composed of the alloy + oxide mixture is different. Further, Comparative Examples 1 to 4 of Table 1 also have the meaning of the comparative examples of the recording film composed of the In alloy outside the composition range of the present invention in Table 1, and the comparative examples 1 to 3 of Figs. 5 to 11 described above. -34- 200841337 Different. In the In alloy of the recording film 4 of the optical disk, in addition to Ni and Co, the ytterbium contains one or more selected from the group consisting of Sn, Bi, Ge, and Si. In the examples (invention examples), the degree of SUM2 in the unrecorded state in each optical recording medium, the C/N値 in the 8T signal recording and reproduction, and the jitter 値 (in the case of continuous 3 track recording) become the minimum recording power and jitter.値 (when continuous 3 track recording). _ In Tables 1 and 2, the maximum laser power of the C/N値 can be obtained in the range of 6 mW to 10 mW. In the table, the SUM2 degree of the unrecorded state is 280 mV or more, which is marked as 〇, dissatisfaction This person is recorded as X. In addition, when the C/N 时 at the time of recording and reproducing of the 8 τ signal is 50 dB or more, it is denoted by 〇, and if it is less than this, it is denoted by X 〇. From Table 1, it is known that the optical disk having the In alloy recording film 4 containing Ni and Co is phased. Compared with each of the comparative examples (In alloy containing Pt, Au or V), the degree of SUM2 and C/N値 are both high, and excellent recording characteristics φ are exhibited. Therefore, the meaning of the contents of Ni, Co, and Ni, Co in the In alloy of the recording film composed of the mixture of the In alloy and the oxide of the present invention was confirmed. • As can be seen from Table 2, in addition to Ni and Co, it is further provided with Bi,

The optical disk of the In alloy recording film 4 of Sn, Ge, and Si is similarly high in the degree of SUM2 and C/N値, and is comparable to Table 1 which does not contain such Bi, Sn, Ge, and Si. In the reference example of the first embodiment, it is possible to obtain a flaw having a low jitter and further excellent recording characteristics. Therefore, it was confirmed that Ni, B i, S n , G e in the In-35-200841337 gold of the recording film composed of the In alloy and the oxide mixture of the present invention.

In addition to Co, 尙 further contains the meaning of S i content.

Bi

Sn, Ge, Si and even [Table 1]

Alloy composition (ICP) Ni+Co film thickness SUM2 8TC/N Example 1 In-Co Co 22at% 22at% 12nm 〇317mV 〇^ 50dB Example 2 In-Co Co 36.2at% 36.2at% 12nm 〇310mV 〇^ 50 dB Example 3 In-Co Co 36.2 at% 36.2 at% 15 nm 〇318 mV 〇^ 50 dB Example 4 In-Co Co 40.8 at% 40.8 at% 12 nm 〇331 mV 〇2 50 dB Example 5 In-Co Co 40.8 at% 40.8 At% 15nm 〇355mV 〇g 50dB Example 6 In-Co Co 43.Oat% 43.Oat% 14nm 〇341mV 〇^ 50dB Example 7 In-Co Co 55.6 at% 55.6 at% 13 nm 〇338 mV 〇^ 50 dB Example 8 In-Co Co 55.6 at% 55.6 at% 15 nm 〇 396 mV 〇 2 50 dB Example 9 In-Co Co 65.1 at% 65.1 at% 18 nm 〇 379 mV 〇 ^ 50 dB Example 10 In-Co Co 65.1 at% 65.1 at% 20 nm 〇41 ImV 〇g 50dB Example 11 In-Ni Ni 34at% 34at% 15nm 〇341mV 〇^ 50dB Example 12 In-Ni-Co Nillat%Col4at% 25at% 15vnm 〇295mV 〇g 50dB Example 13 In-Ni- Co Ni 17at% Col Oat% 27at% 15nm 〇306mV 〇^ 50dB Example 14 In-Ni-Co Ni 28at% ColOat% 38at% 18nm 〇330mV 〇^ 50dB Example 15 In-Ni-Co Ni 29at% Co8at°/ 〇37at°/〇21nm 〇283 mV 〇^ 50dB Example 16 In-Ni-Co Ni 7at% Col7at% 24at% 15nm 〇355mV 〇^ 50dB Example 17 In-Ni-Co Ni 22at% Col3at°/〇35at% 15nm 〇341mV 〇^ 50dB Comparative Example 1 In-Pt Pt 16.6at% — 21nm x205mV x 44dB Comparative Example 2 In-Au Au 12.5 at% — 21 nm xl55mV x 29dB Comparative Example 3 In-V V 14.2 at% — 18 nm 〇 325 mV x 36 dB Comparative Example 4 In-Co Co 67.1 at% 67.1at% 16nm 〇412mV x 47.1dB -36- 200841337 [Table 2]

Alloy Composition (ICP) Film Thickness SUM2 8TC/N Recording Power Jitter Example 18 In-Co Co 55.6at°/〇13nm 〇338mV 〇^50dB 7.1mW 8.4% Example 19 In-Co Co 65.1 at% 8nm 〇379mV 〇^50dB 8.0mW 11.6% Example 20 In-Co-Sn Co 46.1 at% Sn 1.05at 2nm 0291mV 〇^50dB 6.6mW 7.8% Example 21 In-Co-Sn Co 47.1at% Sn 1.75at 12nm 〇289mV O ^SOdB 6.0mW 7.9% Example 22 In-Co-Bi Co 29at%Bil9at%: 5nm 〇310mV 〇^50dB 7.4mW 8.6% Example 23 In-Ni-Sn Ni31at% SnlSat% 15nm 〇311mV 〇^50dB 7.8mW 8.8% Example 24 In-Ni-Sn Ni31at%Snl5at°/〇15nm 〇365mV 〇^50dB 7.6mW 10.1% Example 25 In-Ni-Sn Ni 37at°/〇Sn 17at% 15nm 〇335mV 〇^50dB 8.0mW 9.9% Example 26 In-Co-Bi Co 39at°/〇Bi 10at% 12nm 〇280mV O^SOdB 7.2mW 9.5% Example 27 In-Co-Ge Co 50.4at°/〇Ge 7.4at% 14nm 〇340mV 〇 ^50dB 6.4mW 9.0% Example 28 In-Co-Si Co 42.8 at% Si 6.4 at% 15 nm 〇35 ImV 〇^50 dB 7.2 mW 8.7% Example 29 In-Co-Ni-Sn Co37.4at%Ni9.2at % Sn 4.7at% 12nm 〇344mV O^SOdB 6.6mW 6.9% Example 30 In-Co-Ni-Sn Co36.5at %Nil0.7at% Sn 9.8at% 12nm 〇353mV 〇^50dB 6.4mW 7.3% Example 31 In-Co-Ni-Sn Co41.4at%Ni8.5at% Sn 8.4at% 12nm 〇309mV 〇^50dB 6.4mW 6.9 % Example 32 In-Co-Ni-Sn Co 34.0 at% Ni 16.6 at% Sn 5.7 at% 12 nm 〇308 mV 〇^50 dB 6.2 mW 6.9% Example 33 In-Co-Ni-Sn Co 34.1 at% Ni 13.2 at % Sn 10.9at% 13nm 〇346mV O^SOdB 6.6mW 7.4% Example 34 In-Co-Ni-Sn Co 32.5at°/〇Nil0.7at% Sn 5.2at% 14nm 〇354mV 〇^50dB 6.6mW 7.4% Implementation Example 35 In-Co-Ni-Sn Co 34.2 at% Ni 14.7 at% Sn 3.8 at% 14 nm 〇 312 mV 〇 ^ 50 dB 6.6 mW 8.1% Example 3 6 In-Co-Ni-Sn Co32.2 at% Ni 12.5 at% Sn 7.1 at% llnm 〇286mV 〇^50dB 6.2mW 7.8% Example 37 In-Co-Ni-Sn Co 34.4at%Nil7.5at% Sn 5.3at% 13nm 〇333mV O^SOdB 6.6mW 7.8% (Example 1 In-Co Co 22at% 12nm .〇317mV O^SGdB 6.8mW 11.6% -37- 200841337 The present invention will be described in detail with reference to the specific embodiments, without departing from the spirit and scope of the invention, The corrections are familiar to those skilled in the art. In addition, the applicant of this case is based on the Japanese Patent Application (Japanese Patent Application No. 2006-343039) filed on December 20, 2006 and the Japanese Patent Application (Japanese Patent Application No. 2007 - 1 23 657). And the Japanese franchise application filed on December 7, 2007 (Special Wish 2007 - 3 1 7 3 3 8), which is used by reference. All of the reference frames cited herein are incorporated. INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a recording film which has a good recording characteristic by a relatively low laser power and which has good recording characteristics and has a better signal modulation degree. Optical information recording media. As a result, the optical information recording medium of the present invention can be used as a current CD (Compact Disc) or a DVD (Digital Versatile Disc), a next generation optical information recording medium, HD DVD or BD (Blu-ray Disc). In particular, it is suitably used as a recordable high-density optical information recording medium using a blue-violet laser. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional schematic view showing an embodiment of an optical information recording medium of the present invention. Fig. 2 is a cross-sectional schematic view showing -38-200841337 of another embodiment of the optical information recording medium of the present invention. Fig. 3 is a cross-sectional schematic view showing another embodiment of the optical information recording medium of the present invention. Fig. 4 is a cross-sectional schematic view showing another embodiment of the optical information recording medium of the present invention. Fig. 5 is an explanatory view showing the relationship between the recording laser power and the signal modulation degree of the recording film in the first embodiment. Fig. 6 is an explanatory view showing the relationship between the recording laser power and the signal C/N ratio of the recording film in the first embodiment. Fig. 7 is an explanatory view showing the results of measuring the thermal conductivity of the recording film in the first embodiment. Fig. 8 is an explanatory view showing the relationship between the recording laser power and the signal modulation degree of the recording film in the second embodiment. Fig. 9 is an explanatory view showing the relationship between the recording laser power and the signal C/N ratio of the recording film in the second embodiment. Fig. 1 is an explanatory view showing the relationship between the recording laser power and the signal modulation degree of the recording film in the third embodiment. Fig. 1 is an explanatory view showing the relationship between the recording laser power and the signal C/N ratio of the recording film in the third embodiment. [Description of main component symbols] 1 : support substrate, 2: optical adjustment layer, 3, 5: dielectric layer, 4: recording film, 6 · light transmission layer, 7A, 7B · · recording film group, 8 · · middle Layer, 9: Adhesive layer, 10: CD-39 -

Claims (1)

200841337 X. Patent application scope 1 A light information recording medium is a recording film having a recording mark by irradiation of an energy beam, characterized in that the recording film is composed of a mixture of In alloy oxides. 2. The optical information recording medium of claim 1, wherein the In alloy in the recording film of the optical information recording medium contains Ni and one or two kinds of 1 to 65 atom%, and the residual portion is inevitably _ Sexual impurities are formed. 3. The optical information recording medium according to the second aspect of the invention, wherein the content of one or both of the Ni Co in the In alloy in the recording film of the optical information recording medium is 50 atom% or less. 4. The optical information recording medium according to the second aspect of the invention, wherein the content of one or both of the Ni Co in the In alloy in the recording film of the optical information recording medium is 20 atom% or more. 5. The optical information recording medium of claim 1, wherein the In alloy in the recording film of the optical information recording medium contains Ni and one or two of 1 to 65 atom%, and further contains a material selected from the group consisting of Sn and Bi. And > and one or more of two or more kinds of 19 atom% or less (excluding 0%), and are composed of a residual portion In and an inevitable impurity. 6. The optical information recording medium according to any one of claims 1 to 5, wherein the oxide in the recording film of the optical information recording medium is one of each oxide of the selected one, aluminum, and tantalum, or Two or more kinds of combined oxides of these. 7 · For example, in the case of any of the patent applications, the information is provided in the Co-free and in the Co Ge sub-records -40-200841337 media, in which the recording film of the aforementioned optical information recording medium The mixing ratio of the In alloy to the oxide is in the range of 3 to 10 in terms of the volume ratio of the In alloy to the oxide (In alloy volume) / (oxide volume). - 41 -