TW200836004A - Resist polymer, resist composition, and method of producing substrate formed with fine pattern - Google Patents

Resist polymer, resist composition, and method of producing substrate formed with fine pattern Download PDF

Info

Publication number
TW200836004A
TW200836004A TW96150578A TW96150578A TW200836004A TW 200836004 A TW200836004 A TW 200836004A TW 96150578 A TW96150578 A TW 96150578A TW 96150578 A TW96150578 A TW 96150578A TW 200836004 A TW200836004 A TW 200836004A
Authority
TW
Taiwan
Prior art keywords
polymer
photoresist
hydrophilic group
skeleton
group
Prior art date
Application number
TW96150578A
Other languages
Chinese (zh)
Inventor
Atsushi Yasuda
Hikaru Momose
Original Assignee
Mitsubishi Rayon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Rayon Co filed Critical Mitsubishi Rayon Co
Publication of TW200836004A publication Critical patent/TW200836004A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Abstract

A resist polymer which is a polymer (P) having a lactone structure (B) or a hydrophilic group (C) satisfying the following formula (1) or (2); P[B]/PH[B] ≤ 0.99…(1) P[C]/PH[C] ≤ 0.99…(2), in which P[B] is the content ratio of the lactone structure in the polymer (P), PH[B] is the content ratio of the lactone structure in the polymer (PH), P[C] is the content ratio of the hydrophilic group in the polymer (P), PH[C] is the content ratio of the hydrophilic group in the polymer (PH), The polymer (PH) indicates a polymer the molecular mass of which is large than the average molecular mass (Mw(P)) of the polymer (P) and which is separated by the Gel Permeation Chromatography, and the content ratio of the lactone structure or the hydrophilic group in the polymer indicates a ratio of the peak integration value of the lactone structure or the hydrophilic group to the total of all peak integration value of the polymer measured by NMR, is disclosed.

Description

200836004 九、發明說明: 本申請案主張於2006年12月27號向日本智慧財產局 提出申請之日本特願第2006-350766號以及2007年2月 23號向日本智慧財產局提出申請之日本特願第 2007-043981號的優先權,且該專利申請案所揭露之内容 系完整結合於本說明書中。 【發明所屬之技術領域】200836004 IX. Invention Description: This application claims Japan’s special request No. 2006-350766 filed on December 27, 2006 with the Japan Intellectual Property Office and Japan’s Intellectual Property Office on February 23, 2007. Priority is claimed on 2007-04398, the entire disclosure of which is hereby incorporated by reference. [Technical field to which the invention pertains]

本發明是有關於一種光阻聚合物、光阻組成物以及形 成有細微圖案的基板的製造方法。 【先前技術】 近年來,由於微影(lithography)技術的進步,半導體元 件、液晶元件等的製造製程_形成的光阻圖案迅速地向細 微化方向發展。作為細微化的方法,有將照射光短波長化 的方法。具體而言,使照射光從以往的g線(波長·· 43 8 n m)、 i線(波長:365 nm)所代表的紫外線向更短波長的 DUV(Deep Ultraviolet,深紫外線)變化。 .最近,引入了 KrF准分子雷射(KrF Excimer Laser)(波 長:248 nm)微影技術,而謀求更短波長化的ArF准分子雷 射(波長.193 nm)微影技術以及EUV准分子雷射(波長·· Π nm)微影技術正在研究中。還在進—步研究這些浸液式 U汾技術^外’對於與上述技術不_型的微影技術— 電子射線微影技術,也正在花f精力地進行研究。 阻成使用上述紐波長照射光或電子射線的光 卞的冋~析度光阻組成物,提倡—種含有光酸發生劑 6 200836004f 的化子放大型光阻組成物」,目前正在推進該化學放大 型光阻組成物的改良及開發。 例如’作為ArF准分子雷射微影中所使用的化學放大 型光阻聚合物,對波長193 nm的光透明的丙稀酸系聚合 物受到關注。作為該丙烯酸系聚合物,例如提案了醋部呈 有金剛烷骨架的(甲基)丙烯酸酯與酯部具有内酯骨架白^ (曱基)丙烯酸醋的聚合物(日本專利特開平HU·號公 報、日本專利特開平10-274852號公報等)。 然而,將兩種或兩種以上的單體聚合所得到的多元系 ♦合物’由於各單體_共聚反應性比不同,因此聚合初 ,和?κ合後期生成的聚合物中所含的來源於各單體的構成 早兀之組,比(莫耳分率)不同,使所得聚合物具有組成分 佈。構成單元之組成比未制控制的聚合物,使光阻 性能(在顯影液中的溶解性、靈敏度、解析度、焦點深 降低,因此正在研究控制組成分佈。 & 例如,提案了作為共聚物整體,構成單元連鎖分饰均 勻、共聚組成分佈變窄(曰本專利特開2〇〇5_97516號八 報)。但是,使用了該聚合物的光隨成物所形成的光: 膜,在解析度、焦點深度(D0F)、缺陷(defect)方面不充 【發明内容】 一本發明之目的在於提供一種可以形成高解析度且焦點 沬度(DOF)及缺陷優異的光阻膜的光阻組成物;適於該光 阻組成物的聚合物;不易發生電路的斷線、缺陷等、產率 高、形成有細微圖案之基板的製造方法。 200836004 種光阻聚合物,該聚合 骨架(B)或親水性基團 本發明之第1要旨是有關於一 物具有酸離去性基團(A)和内酯 (C),且滿足下述式(〗)或式(2)。 P[B]/PH[B]^ 0.99-(1) P[C]/Ph[C]^〇.99-(2) ·水令物(P)中的内酯骨架的含有率;The present invention relates to a photoresist polymer, a photoresist composition, and a method of producing a substrate having a fine pattern. [Prior Art] In recent years, due to advances in lithography technology, a photoresist pattern formed by a manufacturing process of a semiconductor element, a liquid crystal element, or the like has rapidly progressed toward miniaturization. As a method of miniaturization, there is a method of shortening the wavelength of irradiation light. Specifically, the irradiation light is changed from the ultraviolet rays represented by the conventional g-line (wavelength··43 8 n m) and the i-line (wavelength: 365 nm) to the shorter-wavelength DUV (Deep Ultraviolet). Recently, KrF Excimer Laser (wavelength: 248 nm) lithography technology was introduced to achieve shorter wavelengths of ArF excimer laser (wavelength.193 nm) lithography and EUV excimer Laser (wavelength·· Π nm) lithography technology is under study. Further research into these immersion U 汾 technologies is also being conducted for the lithography technology of the above-mentioned technology. A ruthenium-density photoresist composition that inhibits the use of the above-mentioned neon wavelength irradiation light or electron beam, and promotes a chemically amplified photoresist composition containing photoacid generator 6 200836004f, and is currently advancing the chemistry Improvement and development of large photoresist compositions. For example, as a chemically amplified photoresist used in ArF excimer laser lithography, an acrylic polymer which is transparent to light having a wavelength of 193 nm has been attracting attention. As the acrylic polymer, for example, a (meth) acrylate having an adamantane skeleton in a vinegar portion and a polymer having a lactone skeleton white thiophene acrylate in an ester portion have been proposed (Japanese Patent Laid-Open No. Japanese Patent Laid-Open Publication No. Hei 10-274852, and the like. However, the multicomponent compound obtained by polymerizing two or more kinds of monomers has different copolymerization reactivity ratios due to the respective monomers, so that the polymerization is contained in the polymer formed at the beginning of the polymerization and the ? The group derived from the composition of each monomer is different in composition (mole fraction), and the obtained polymer has a composition distribution. The composition of the constituent unit is higher than that of the uncontrolled polymer, so that the photoresist performance (solubility, sensitivity, resolution, and depth of focus in the developer is lowered), and thus the composition distribution is being studied. & For example, it is proposed as a copolymer. As a whole, the constituent elements of the unit are evenly distributed, and the distribution of the copolymerization composition is narrowed (Japanese Patent Laid-Open No. 2〇〇5_97516, No. 8). However, the light formed by the light of the polymer is formed: the film is analyzed. Degree of Depth, Depth of Focus (D0F), and Defective Aspects of Invention The present invention aims to provide a photoresist composition capable of forming a high-resolution photoresist having excellent focus (DOF) and defects. a polymer suitable for the photoresist composition; a method for producing a substrate having a fine pattern and having a high yield and having a fine pattern; 200836004 Photoresist polymer, the polymer skeleton (B) Or a hydrophilic group The first gist of the present invention relates to an article having an acid-releasing group (A) and a lactone (C) and satisfying the following formula (I) or (2). ]/PH[B]^ 0.99-(1) P[C]/Ph[C]^〇.99-( 2) The content of the lactone skeleton in the water repellent (P);

Ph[B] ·聚合物(pH)中的内酯骨架的含有率; f P[C] ··聚合物(P)中的親水性基團的含有率’;Ph[B] · content of lactone skeleton in polymer (pH); f P [C] · content ratio of hydrophilic group in polymer (P)';

Ph[C] ·聚合物(Ph)中的親水性基團的含 χκ合物(PH)為藉由凝膠滲透 、 收集的、分子量大於聚合 ;·自==分離 的聚合物;以及 、十句刀子置(MwR)) 聚合物中的内醋骨架、親水性 難R測定的内酯骨架 :’:有率為.利用 聚合物之所有峰的積分值巧積分值相對於 造方=之=旨是有闕於一種上述先阻聚合物的f ^即·向反應開始前的自括呈古出此1 具有親水性基團的單體的聚合溶中、=架的單體或 團,和聚合卿,進行溶;自以 聚合物:光==第3要旨是有關於-種含有上述光阻 利用本發明之光阻聚合物, 且焦點深度缺崎^了心财職解析度高 另外1々異的光阻膜的光阻組成物。 本發日狀光阻聚合物的製造方法可以生產效率 200836004 26866pif 良好地製造具有上述特性之光阻聚合物。 並且,本發明之光阻聚合物以及光阻組成物可以適用 於DUV准分子雷射微影、上述浸液式微影以及電子射線 微影、特別是ArF准分子雷射微影以及此浸液式微影。 另外,利用本發明之圖案製造方法,可以形成高精度 的細微光阻圖案,籍此可以製造形成有高精度的細微圖案 的基板。Ph[C] · The hydrazine-containing conjugate (PH) of the hydrophilic group in the polymer (Ph) is a polymer which is infiltrated by the gel, and which has a molecular weight greater than the polymerization; ·Separated from ==; and, ten Sentence knife set (MwR) The internal vinegar skeleton in the polymer, the lactone skeleton determined by the hydrophilicity R: ': The rate of use. The integral value of all the peaks of the polymer is calculated relative to the square = The invention is directed to the polymerization of a monomer having a hydrophilic group, and the monomer or group of the monomer having a hydrophilic group, and Polymerization: Solvent; Self-polymer: Light == The third purpose is to use the photoresist of the present invention containing the above-mentioned photoresist, and the depth of focus is lacking. A photoresist composition of a strange photoresist film. The production method of the present-day photo resist polymer can produce a production efficiency. 200836004 26866pif A photoresist polymer having the above characteristics is favorably produced. Moreover, the photoresist polymer and the photoresist composition of the present invention can be applied to DUV excimer laser lithography, the above-mentioned immersion lithography and electron ray lithography, especially ArF excimer laser lithography, and the immersion liquid micro Shadow. Further, according to the pattern manufacturing method of the present invention, it is possible to form a fine-precision fine resist pattern, whereby a substrate on which a fine pattern with high precision can be formed can be manufactured.

&gt;為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂,下文特舉較佳實施例,並配合所附圖式,作細 明:^下。 【實施方式】 本卷明之光阻聚合物,必需具有酸離去性基團(八 酯骨架(B)或親水性基團(C)。 &gt;酸離去性基®⑷具祕由酸的仙而㈣的鍵,夢由 ^的開裂’部分或全部酸離去性基團從聚合物的主^上 :降具有賊離去性基_聚合物在當作是光阻用組成 圖案二::因酸的作用而可溶於驗,而發揮可形成光阻 或親=基本團^之光阻聚合物’還必需具有__ 而顯影特性得到改善。〃可㈣潤濕性’ 密合 另外’藉由具有内s旨骨架,細組成物與基板的 9 200836004 ^uouupn ™tt:形,光阻紐成物,〜 本發明中,内西匕A力 ^ 逑式⑴或式(2)。曰月七⑻或親水性基團(C)必驚〜 P[b]/Ph[B]s〇.99...⑴ P[C]/PH[C]錢99 ··· (2) 聚合物中的親水性基團的含有率; 收集的聚合物,其;析法自聚合物⑺中分離 ⑽;以及子里大於聚合物(p)的質量平均分子量 旨㈣、親水性基_含有率為:利用 聚合物之所有峰的積分值相對於 聚合情況x下旦意味著當比較分子量小於等於 合物(P)的併=里、’均分子置的聚合物(Pl)與分子量大於聚 括更多==量的聚合物(。H)時,聚合卿 聚合tt(i)的情況下’意味著#比較分子量小於等於 合物=!量平均分子量㈣合物⑹與分子量大於聚 括更多=水==量的聚合物跡聚合_包 10 200836004 曰本發明中,藉由在分子量大於聚合物(p)的質量平均分 子量的聚合物(pH)中包括大量極性大的内酯骨架⑻或親 水性基團(Q,使顯影特性得到改善,將本發明之聚合物用 於光阻組成物時,能夠形成前所未有的解析度高且焦點深 度(DOF)優異的光阻膜。 、亚且,在可得到解析度高、缺陷減少效果優異的光阻 組成物方面,較佳的是同時滿足式(1)和式(2)。 古另外,就P[B]/PH[B]、P[C]/PH[C]而言,從可得到解析 度,、缺陷減少效果優異的光阻組成物的角度考慮,較佳 的是=於等於〇·98 ;從在光阻用溶劑中的溶解性方面^ 慮’較佳的是大於等於0.2。 二應說明的是,就聚合物(P)中的内酯骨架的含有率而 吕二從光阻組成物的靈敏度以及解析度的角度考慮,較佳 於等於60莫耳百分比(mol%);從與基板的密“ 万面考慮’較佳的是大於等於20 mol%。 t; 、應說明的是,本發明對内酯骨架沒有特別限定,1 =舉^〜2G元左右的内醋骨架,也可以僅是内酉旨環二 &lt;逛可以是非芳香族性或芳香族性的碳環 酯環縮合。 衣义碟%與内 k另外,親水性基團是指-C(CF3)2_OH、羥基、氰基、 土、幾基以及胺基中的直少一種。 气(1)、式(2)藉由以下所述之方法進行測定。 200836004 Ζόδοορίϊ ⑴求出聚合物(Ρ)的質量平均分子量(Mw(p))。 ⑼使用標準聚苯乙稀,求出檢量線(溶出時間與分子量 的關係)。 (iii)在檢量、線中,求出分子量為步驟(i) w(p) 的溶出時間丁。 聚合物(P)的溶液注人分取柱中,分離收集在步 :卞)=:峨T之前溶出的成分作為聚合物 =),刀雜木在溶出時間τ之後溶出的成 聚合物 合物(p)中的内酯骨架的含有率以及親水性 卿鍋輯㈣含有率以及親 步驟(i): /欠杜了口4物(P)的質量平均分子量(MW(P))為按昭下述GPC 條件工,利用GPC求得的聚苯乙烯 广、下- ο [GPC條件I] 衣置丁〇S〇h社製,Tosoh高速GPC装置HL〇822〇 GPC(商品名); 衣直 刀離柱·昭和電工社製,Shodex GPC K_805L(商品 名)’將3根串聯·, 測定溫度:4〇ΐ ; 溶出液··四氫呋喃(以下記作THF。) 5式樣·將約20 mg的聚合物(Ρ)溶解於5 mL的THF中, 用〇·5 μηι白勺薄犋過濾器過滤而得到的溶液; 12 200836004 26866pif 流量:lmL/min (毫升/分鐘)The above and other objects, features, and advantages of the present invention will become more apparent from the <RTIgt; [Embodiment] The photoresist of the present invention must have an acid-releasing group (octaester skeleton (B) or a hydrophilic group (C). &gt; Acid-off radicals (4) have a secret acid The key to the fairy (four), the dream is cracked by ^ part or all of the acid leaving group from the main molecule of the polymer: the drop has a thief leaving the base - the polymer is used as a photoresist to form the pattern two: : It can be dissolved in the test due to the action of acid, and the photo-resist polymer which can form a photoresist or a pro-base group must also have __ and the development characteristics are improved. (4) Wettability' ' By the internal structure of the skeleton, the fine composition and the substrate 9 200836004 ^uouupn TMtt: shape, photoresist complex, ~ In the present invention, Neissy A force ^ 逑 (1) or formula (2).曰月七(8) or hydrophilic group (C) must be shocked~ P[b]/Ph[B]s〇.99...(1) P[C]/PH[C]钱99 ··· (2) Polymerization The content of the hydrophilic group in the material; the collected polymer; the separation method is separated from the polymer (7) (10); and the mass average molecular weight of the polymer (p) is greater than (4), the hydrophilic group content rate To: use all the peaks of the polymer The integral value relative to the polymerization case x means that when the comparative molecular weight is less than or equal to the sum (P) of the compound (P), the polymer (Pl) and the polymer having a molecular weight greater than the poly (including more == amount) In the case of H), in the case of polymerized polymerization tt(i), it means 'compare molecular weight less than or equal to compound=! quantity average molecular weight (tetra) compound (6) and polymer trace with molecular weight greater than polygraph more = water == amount Polymerization_Package 10 200836004 In the present invention, development is carried out by including a large amount of a highly polar lactone skeleton (8) or a hydrophilic group (Q) in a polymer (pH) having a molecular weight larger than the mass average molecular weight of the polymer (p). When the polymer of the present invention is used for a photoresist composition, it is possible to form a photoresist film having high resolution and excellent depth of focus (DOF), which is excellent in resolution and reduction in defects. In terms of a photoresist composition excellent in effect, it is preferred to satisfy both formulas (1) and (2). In addition, in terms of P[B]/PH[B], P[C]/PH[C] From the viewpoint of obtaining a photoresist composition having excellent resolution and excellent defect reduction effect, it is preferable that于〇·98; from the solubility in the solvent for photoresist, it is preferable that it is 0.2 or more. 2. The content of the lactone skeleton in the polymer (P) should be explained. From the viewpoint of the sensitivity and resolution of the photoresist composition, it is preferably equal to 60 mol% (mol%); and from the dense side of the substrate, it is preferably 20 mol% or more. It should be noted that the lactone skeleton is not particularly limited in the present invention, and 1 = an internal vinegar skeleton of about 2 to 2 G or a vinegar skeleton of only 2 to 2 G, and may be non-aromatic or aromatic. Carbocyclic ester ring condensation. In addition, the hydrophilic group refers to a type of -C(CF3)2_OH, a hydroxyl group, a cyano group, a soil, a group, and an amine group. The gas (1) and the formula (2) were measured by the methods described below. 200836004 Ζόδοορίϊ (1) Determine the mass average molecular weight (Mw(p)) of the polymer (Ρ). (9) Using a standard polystyrene, a calibration curve (the relationship between dissolution time and molecular weight) is obtained. (iii) The elution time dicence of the molecular weight of the step (i) w(p) is determined in the amount of the test and the line. The solution of the polymer (P) is taken into a column, and the component which is dissolved before the step: 卞) =: 峨T is separated and collected as a polymer =), and the polymer compound which is dissolved after the dissolution time τ is obtained. The content of the lactone skeleton in (p) and the hydrophilicity of the pot (4) and the pro-step (i): / the mass average molecular weight (MW (P)) of the 4 (P) The following GPC conditions, the polystyrene obtained by GPC, the lower - ο [GPC condition I] clothing set Ding Hao S〇h company, Tosoh high-speed GPC device HL 〇 822 〇 GPC (trade name); Shodex GPC K_805L (trade name)', three series are connected in series, and the temperature is measured: 4 〇ΐ; eluate · tetrahydrofuran (hereinafter referred to as THF) 5 pattern · about 20 mg A solution obtained by dissolving a polymer (Ρ) in 5 mL of THF and filtering it with a 犋·5 μηι 犋 ; filter; 12 200836004 26866pif Flow: 1 mL/min (ml/min)

注入量:o.l mL 檢測器··差示折射計 檢量線I :將約20 mg的標準聚苯乙烯溶解於5mL的 THF中,用〇·5 μηι的薄膜過濾器過濾,使用所得溶液,在 上述條件下注入到分離柱中’求出溶出時間與分子量的關 係。標準聚苯乙烯使用下述Tosoh社製的標準聚笨乙烯(均 為商品名)。 F-80 (Mw = 706,000), F-20 (Mw= 190,000), F-4 (Mw = 37,900), F-l (Mw =10,200), A-2500 (Mw = 2,630), A-500 (Mw = 682、578、474、370、260 的混合物)。 步驟(ii): 將GPC條件變更為GPC條件π,使用標準聚苯乙烯, 求出檢量線II (溶出時間與分子量的關係)。 [GPC 條件 II]Injection amount: ol mL detector · Differential refractometer calibration line I: Dissolve about 20 mg of standard polystyrene in 5 mL of THF, filter with a membrane filter of 〇·5 μηι, and use the resulting solution. The injection into the separation column under the above conditions was carried out to determine the relationship between the elution time and the molecular weight. As the standard polystyrene, the following standard polystyrene (trade name) manufactured by Tosoh Corporation was used. F-80 (Mw = 706,000), F-20 (Mw= 190,000), F-4 (Mw = 37,900), Fl (Mw = 10,200), A-2500 (Mw = 2,630), A-500 (Mw = 682) , a mixture of 578, 474, 370, 260). Step (ii): The GPC condition is changed to the GPC condition π, and the calibration curve II (the relationship between the elution time and the molecular weight) is obtained using standard polystyrene. [GPC Condition II]

裝置:Tosoh 社製,Tosoh 高速 GPC 裝置 HLC_8220GPC (商品名); 分離柱:昭和電工社製,Shodex GPC K-2005(商品 名),將2根串聯; 測定溫度:40°C ;Device: Tosoh Co., Ltd., Tosoh high-speed GPC device HLC_8220GPC (trade name); Separation column: Shodex GPC K-2005 (trade name), two series in series; measuring temperature: 40 ° C;

溶出液:THF 13 200836004 ΖΟδΟΟρίΙ 试樣··將約120 mg的秀人合物(Ρ)》谷解於5 mL的丁hf 中,用〇·5 μηι的薄膜過濾器過濾而得到的溶液; 流量:4 mL/min 注入量:1 mL 檢測器:差示折射計 檢量線II ··將約120 mg的標準聚苯乙烯溶解於5 mL 的THF中,用〇·5 μιη的薄膜過濾器過濾,使用所得溶液, 在上述條件下注入到分離枉中,求出溶出時間與分子量的 關係。標準聚苯乙烯使用下述Tosoh社製的標準聚苯乙烯 (均為商品名)。 F-80 (Mw-706,000) F-20 (Mw= 190,000) F-4 (Mw-37?900) M (Mw= 10,200) A-2500 (Mw = 25630) A-500 (Mw=682、578、474、370、260 的混合物)。 步驟(iii): 在檢量線II中,求出分子量為步驟(i)求得的Mw(P)的 溶出時間T。 步驟(iv): 將聚合物(P)的溶液注入到分離柱中,按照GPC條件 Π’分離收集在步驟(iii)求出的溶出時間T之前溶出的成分 作為聚合物(PH),分離收集在溶出時間T之後溶出的成分 作為聚合物(Pi)。 14 200836004 ^όδόόριί 步驟(V): NMR^Ht旨骨架、親水性基團的含有率為:利用 聚合物之所有^骨㈣親水性基目之峰的積分值相對於 死以拉士 w绎的積分值之和的比率。關於各含有率,在 朿出·曰Μ所_NMR測定求出的情況下,藉由〗H_NMR測定 ^ ,貝子峰的重疊等而無法藉由測定求出的 十月況下,藉由13cwmr測定求出。 Γ 測定] H NMR測定中,使用日本電子社製GSX-400塑 FTNMR(商名),將約5重量百分比(加%)的聚合物⑺或 ^合物|Ph)的溶液(聽氯仿溶液錢化二甲基亞颯溶液) I入直徑為5 mmcp的試管中,在觀測頻率4〇〇MHz、單脈 衝模式下進行64次累計。應說明的是,就測定溫度而言, 當以氘化氯仿作為溶劑時,在40°C下進行測定;當以氘化 一甲基亞磯作為溶劑時,在6〇它下進行測定。 [13C-NMR 測定] 13 C-NMR 測定中,使用 vaHan Techn〇l〇gies 社製 UNITY_INOVA型FT-NMR(商品名),將約20 wt%的聚合 物(P)或聚合物(PH)的氘化二曱基亞砜溶液裝入直徑為5 〇1!11(?的試管中,在測定溫度60。(::、觀測頻率125]\/[1^下, 利用除去了核間奥氏效應(NOE)的質子完全退耦法進行 50000次累計。 (聚合物(P)的製造方法) 接下來,對本發明之光阻聚合物的製造方法進行說明。 15 200836004 26866pif 本發明之光阻聚合物,是藉由將具有 單體與具有内酯骨架的單體或具有 性基團的 而得之。 ㈣雜基_單體共聚 料聚合方法,可以列舉如:向反應開始前 = 早體或具有親水性基_單體的聚合溶射 ===性基團的單體和聚合起始劑,進行溶液自 溶^由基聚合中,聚合初期生成高分子量聚合物, 之後,Ik著聚合的進行,生成低分子量聚合物。 本發明中,由於反應開始前的 ; 骨架的單體或具有親水性基團 ϋ、,内酉曰 應系統中含有大量具有_=體 團的單體_鮮元。 从狀具有親水性基 t明中,當向反應開 有酸離去性基圑的單體 甲至A、應具 去性基團的單體以外的單=5日守’可以供應除具有酸離 單體或具有親水性基團j體也可以供應具有内酉旨骨架的 一邊向反應開始前的4 = θ丄 親水性基團的單體的括具有内§旨骨架的單體或具有 或具有親水性供應具有内酷骨架的單體 具有内醋骨架的單體或:^仃♦合時,較佳的是,在 wt%)中,有3 wt%或3 、有親水性基團的單體總量(100 &lt; Wt%以上包含在反應開始前的聚合 16 200836004 26866pif 溶液中。 作為具有内s旨骨架的單體,只要是可以用於光阻聚人 物的單體即可,沒有特別限定。從密合性優異的角度σ, 最好使用選自具有取代或未取代的δ_戊内酿環的&amp; ^ ’ 稀酸醋、具有取代或未取代的γ_τ_環的單體所: 組群的至少一種,特別適合使用具有未取代的γ_丁内㊉产 的單體。具體可以列舉出:β-曱基丙烯酸氧基-卜曱基^ =内酯、4,4·二甲基_2-亞甲基个丁内酯、&quot;基丙烯:氧 基丁内酯、β·甲基丙觸氧基令甲基个丁内酯、 丙稀酿氧基-γ-丁内酉旨、2仆甲基丙烯酿氧基)乙基-二 脂:泛酸内醋甲基丙烯酸醋等。另外,作為具有類似 的皁體,還可以列舉甲基丙烯酸氧基號轴酸酐等。上^ ^根據需要可以單獨使用,或者是_或兩種以上組=Eluate: THF 13 200836004 ΖΟδΟΟρίΙ Sample · A solution obtained by dissolving about 120 mg of the compound (Ρ) in 5 mL of butyl hf and filtering with a membrane filter of 〇·5 μηι; :4 mL/min Injection volume: 1 mL Detector: Differential refractometer calibration line II ·· Dissolve about 120 mg of standard polystyrene in 5 mL of THF and filter with a 〇·5 μιη membrane filter Using the obtained solution, it was injected into the separated crucible under the above conditions, and the relationship between the elution time and the molecular weight was determined. As the standard polystyrene, the following standard polystyrene (trade name) manufactured by Tosoh Corporation was used. F-80 (Mw-706,000) F-20 (Mw= 190,000) F-4 (Mw-37?900) M (Mw= 10,200) A-2500 (Mw = 25630) A-500 (Mw=682, 578, a mixture of 474, 370, 260). Step (iii): In the calibration curve II, the elution time T at which the molecular weight is Mw (P) obtained in the step (i) is determined. Step (iv): a solution of the polymer (P) is injected into the separation column, and the component eluted before the dissolution time T obtained in the step (iii) is collected as a polymer (PH) according to the GPC condition, and separated and collected. The component which eluted after the dissolution time T was used as the polymer (Pi). 14 200836004 ^όδόόριί Step (V): NMR^Ht The content of the skeleton and hydrophilic group is: the integral value of the peak of the hydrophilic base of all the bones of the polymer is compared with the death of the yaws The ratio of the sum of the integral values. When the content ratio is determined by 朿 曰Μ 曰Μ NMR NMR measurement, the measurement is performed by 13 Cwmr by the measurement of H_NMR, the overlap of the Bezifeng, and the like, which cannot be determined by measurement. Find out. Γ Measurement] In the H NMR measurement, a solution of about 5 wt% (plus %) of the polymer (7) or the compound|Ph) was used using GSX-400 plastic FTNMR (trade name) manufactured by JEOL Ltd. (Listening to chloroform solution money) The dimethyl hydrazine solution was introduced into a test tube having a diameter of 5 mmcp, and accumulatively performed 64 times in the single pulse mode at an observation frequency of 4 〇〇 MHz. Incidentally, in terms of the measurement temperature, when deuterated chloroform was used as a solvent, the measurement was carried out at 40 ° C; and when deuterated monomethyl aspartate was used as a solvent, the measurement was carried out under 6 Torr. [13C-NMR measurement] In the measurement of 13 C-NMR, about 20 wt% of the polymer (P) or polymer (PH) was used in the UNITY_INOVA type FT-NMR (trade name) manufactured by vaHan Techn〇l〇gies Co., Ltd. The deuterated dimercaptosulfoxide solution was placed in a test tube with a diameter of 5 〇1!11 (?, at a measuring temperature of 60. (::, observation frequency 125]\/[1^, using the removal of internuclear austen The effect (NOE) proton decoupling method is performed 50,000 times. (Production method of polymer (P)) Next, a method for producing the photoresist polymer of the present invention will be described. 15 200836004 26866pif Photoresist polymerization of the present invention The material is obtained by having a monomer and a monomer having a lactone skeleton or a functional group. (IV) A method for polymerizing a hetero group-monomer copolymer, for example, before the start of the reaction = early body or A monomer having a hydrophilic group-monomer polymerization === group and a polymerization initiator are subjected to solution autolysis. In the base polymerization, a high molecular weight polymer is formed in the initial stage of polymerization, and then Ik is polymerized. Producing a low molecular weight polymer. In the present invention, due to the start of the reaction; There is a hydrophilic group ϋ, and the internal enthalpy system contains a large number of monomers with a _= body group _ fresh elements. The cation has a hydrophilic group t, when the reaction is opened with an acid leaving group Monomer A to A, a monomer other than a monomer having a deactivating group, can be supplied as a side with an acid-free monomer or a hydrophilic group. The monomer of the 4 = θ 丄 hydrophilic group before the start of the reaction includes a monomer having a skeleton of the internal § or a monomer having or having a hydrophilic supply of a monomer having an internal skeleton having an internal vinegar skeleton or: ♦ In time, preferably, in wt%), there are 3 wt% or 3, the total amount of monomers having a hydrophilic group (100 &lt; Wt% or more of the polymerization before the start of the reaction 16 200836004 26866pif solution The monomer having a skeleton having an internal singularity is not particularly limited as long as it can be used for a photo-blocking person. From the viewpoint of excellent adhesion, σ is preferably selected from substituted or unsubstituted. The δ_pentane ring of &amp; ^ ' dilute vinegar, monomer with substituted or unsubstituted γ_τ_ ring: At least one of the groups is particularly suitable for the use of a monomer having an unsubstituted γ-butene. Specific examples thereof include: β-mercapto acrylate-di-bromo^, lactone, 4,4·dimethyl-2 - methylene butyrolactone, &quot; propylene: oxybutyrolactone, β-methyl propyloxy alkoxymethylbutyrolactone, propylene oxy-γ-butane, 2 The methacrylic acid oxy) ethyl-diester: pantothenic acid methacrylic acid vinegar, etc. Further, as a similar soap body, a methacrylic acid valent anhydride or the like can also be mentioned. On ^ ^ can be used alone as needed, or _ or more than two groups =

構成^外^與基板的密合性方面考慮,在聚合物(Ρ)的紬 構成早兀⑽獅1%)中,具有内㈣ H 的是大於等於3Gm〇l%,更佳岐大轉=5^]較佳 =度及解析度的角度考慮,具有_骨架的= 的於等於60腦1%,更佳的是小於等於車父佳 一步較佳的是小於等於50mol%。 *、55_/。’進 作為具有親水性基團的單體 合物的單體即可,沒有特二 甲基)丙烯酸醋、以及這些單體的°性^2端 有燒基、絲、縣等取代基的衍生物或 17 200836004 己醋、(曱基)丙烯酸丨_異冰片酯、(甲基)丙烯酸金剛烷基 醋、(曱基)丙烯酸三環癸酯、(甲基)丙烯酸二環戊酯、2_ 曱基金剛烷基(甲基)丙烯酸酯、2_乙基_2_金剛烷基(甲基) 丙烯酸酯等的環烴基上具有羥基、羧基等親水性基團作為 取代基的單體。 作為上述具有親水性基團的單體,具體可以列舉出: (甲基)丙烯酸、(甲基)丙烯酸2-羥乙酯、(曱基)丙烯酸3_ 輕丙酉曰、(甲基)丙稀酸經基正丙酯、(曱基)丙烯酸‘經 丁醋、3-羥基金剛烷基甲基丙烯酸酯等。 士作為具有親水性基團的單體,從用於光阻組成物材料 時聚合物與基板的密合性方面考慮,其中較佳的是μ曱基 丙烯酿氧基-3-經基金剛烧等。 上述單體根據需要可以單獨使用,或者是兩種或兩種 以上組合使用。 30mol%,更佳的是 10〜25 m〇1%。In terms of the adhesion between the composition and the substrate, in the case where the polymer (Ρ) is formed in the early 兀 (10) lion 1%), the inner (four) H is greater than or equal to 3 Gm 〇 1%, and more preferably 岐 转 = 5 ^] Preferably, the degree of degree and resolution is equal to 60% of the brain of the _skeleton, and more preferably less than or equal to 50 mol%. *, 55_/. 'Into the monomer as a monomer having a hydrophilic group, no special dimethyl acrylate vinegar, and the derivatives of these monomers have a substituent such as a burnt group, a silk, a county, etc. Or 17 200836004 hexyl vinegar, bismuth (mercapto) yttrium isophthalate, adamantyl (meth) acrylate, tricyclodecyl methacrylate, dicyclopentanyl (meth) acrylate, 2 曱A monomer having a hydrophilic group such as a hydroxyl group or a carboxyl group as a substituent on a cyclic hydrocarbon group such as a polymer such as a methyl (meth) acrylate or a 2-ethyl 2 - adamantyl (meth) acrylate. Specific examples of the monomer having a hydrophilic group include (meth)acrylic acid, 2-hydroxyethyl (meth)acrylate, (meth)acrylic acid 3_light propylene, and (meth) propylene. The acid is n-propyl propyl ester, (mercapto)acrylic acid butyl vinegar, 3-hydroxyadamantyl methacrylate, and the like. As a monomer having a hydrophilic group, it is considered from the viewpoint of the adhesion of the polymer to the substrate when used for the photoresist composition material, and among them, it is preferred that the μ-mercaptopropene-oxy-3 is cooled by the fund. Wait. The above monomers may be used singly or in combination of two or more kinds as needed. 30 mol%, more preferably 10 to 25 m〇1%.

土述(甲基)丙稀酸醋中,包括在具有碳原子數為6〜2〇 《光阻圖案矩形性的角度考慮,在聚合物⑺的總構成 單元(100 mol〇/0)中,具有親水性基團的單體較佳的是5〜 的脂環式烴基的同時,在婆 氧原子結合的部位具有第三 ,與構成(甲基)丙歸酸醋之酯鍵的 第三級碳原子的(甲基)丙稀酸醋。 18 200836004 zoouuyu 上述脂環式烴基可以直接與構成(曱基)丙烯酸醋之醋 鍵的氧原子結合,也可以經由亞烷基等連結基進行二人。曰 該「(甲基)丙烯酸酯」中,還包括在具有碳原 〜20的脂環式烴基的同時,-COOR基氓表示可具有取代 基的第三級烴基、四氫呋喃基、四氫吡喃基或氧雜環庚烷 基(oxepanyl))直接或經由連結基結合在上述脂環式二芙: 的(曱基)丙烯酸酯。 u工土 作為上述具有酸離去性基團的單體,具體可以列舉 出:2-曱基-2-金剛烷基曱基丙烯酸酯、2_乙基金剛烷基 甲基丙烯酸酯等。 土 上述單體根據需要可以單獨使用,或者是兩種或兩種 以上組合使用。 π從靈敏度及騎度的角度考慮,在聚合物(p)的總構成 早几(100 mol%)中,具有酸離去性基團的單體較佳的是大 於等於20 m〇l%,更佳的是大於等於25福%。從與基板 ^面等的密合性的肖度考慮,具去性基_單體較 佳的是小於等於60 mol%,更佳的是小於等於55 m〇p/〇, 進—步較佳的是小於等於50 m〇1%。 聚合溶劑沒有特別限定,可以列舉出:_(二乙鍵、丙 —醇單甲_(以下也稱作「PGME」。)等鏈㈣、四氣咬喃 (二下^爯作「册」。)、W二魏等環狀趟等)、I旨(乙 一夂-曰、乙酸乙醋、乙酸丁酯、乳酸乙酯、乳酸丁醋、丙 :二早”乙(以下也稱作「PGMEA」h•丁議等)、 -同㈤同、丁酮(以下也稱作「MEK」。)、甲基異丁基酮(以 19 200836004 下也稱作「MIBK」。)等)、酿胺(N,N-二甲基乙酿月安、 二甲基甲酿胺等)、亞砜(二甲基亞礪等)、煙(苯、甲,一 :苯等芳香族烴、己料脂肪族煙、環己垸等脂環式: #)、上述溶劑的混合溶劑等。 飞工 作為聚合起始劑,沒有特別限定,較佳的是藉由 作用有效率地產生自由基的聚合起始劑。上述聚合起^ 可以列舉如:2,2,-偶氮二異丁腈、二甲基·2,2、偶氮二里; 醋、2,2,-偶氮二[2_(2-味哇琳_2_基)丙峨偶氮化合物、^ (ΤΙ基:,5;3三級丁基過氧基)己烧、過氧化二碳酸二 (‘罘二級丁基核己基)酯等有機過氧化物等。 姨供供應上料體 '聚合起始劑時,可以連 :ί、應’可之滴加供應。在進行滴加供應_加聚合 Μ將聚合容器内部加熱至預定的聚合溫度後,將^及 =起始劑分料獨地或者略合滴加到聚合= 滴加單體時,可以僅以單體來 :進:,下也記作「滴加溶劑」二 入聚故作「填料溶劑」。)裝 内。在沒有财預先將填料溶舰人聚合容器 單體或聚合起如浴劑裝入聚合容器内的情況下,將 容器中。 D%fl在不存在填料溶劑的狀態下滴加到聚合 聚合起始劑可以直接溶解於單體中,也可以溶解於單 20 :溶液中In the case of the (meth)acrylic acid vinegar, in the case of having a carbon atom number of 6 to 2 〇 "the rectangular shape of the photoresist pattern, in the total constituent unit (100 mol 〇 / 0) of the polymer (7), The monomer having a hydrophilic group is preferably a 5- to alicyclic hydrocarbon group, and has a third position at a site where the oxygen atom is bonded, and a third stage which constitutes an ester bond of the (meth) acridine vinegar. Carbonic acid (meth) acrylate vinegar. 18 200836004 zoouuyu The above-mentioned alicyclic hydrocarbon group may be bonded directly to an oxygen atom constituting a vinegar bond of (mercapto)acrylic acid vinegar, or may be carried out via a linking group such as an alkylene group. Further, the "(meth) acrylate" includes a alicyclic hydrocarbon group having a carbon number of -20, and the -COOR group 氓 represents a third-stage hydrocarbon group, a tetrahydrofuranyl group, a tetrahydropyran which may have a substituent. The oxepanyl group or the oxepanyl acrylate is bonded to the above-mentioned alicyclic diketone (meth) acrylate either directly or via a linking group. u Soil The specific examples of the monomer having an acid-releasing group include 2-mercapto-2-adamantyl decyl acrylate and 2-ethyladamantyl methacrylate. The above monomers may be used singly or in combination of two or more kinds as needed. π From the viewpoint of sensitivity and riding degree, in the early (100 mol%) of the total composition of the polymer (p), the monomer having an acid leaving group is preferably 20 m〇l% or more. More preferably, it is greater than or equal to 25%. From the viewpoint of the adhesion to the substrate surface, etc., the specific group-monomer is preferably 60 mol% or less, more preferably 55 m〇p/〇 or less, preferably further. It is less than or equal to 50 m〇1%. The polymerization solvent is not particularly limited, and examples thereof include a chain (four) such as a bis (diethyl bond, a propylene-alcohol monomethyl amide (hereinafter also referred to as "PGME"), and a four-gas smear. ), W, Wei, etc., etc.), I (E. 夂-曰, ethyl acetate, butyl acetate, ethyl lactate, lactic acid butyl vinegar, C: two mornings) B (hereinafter also referred to as "PGMEA" h•丁议, etc., - the same (five), butanone (hereinafter also referred to as "MEK".), methyl isobutyl ketone (also referred to as "MIBK" under 19 200836004), and amine ( N,N-dimethyl ketone, dimethyl sulfoxide, etc.), sulfoxide (dimethyl hydrazine, etc.), smoke (benzene, methyl, benzene, aromatic hydrocarbons, etc.) An alicyclic formula such as smoke or cyclohexane: #), a mixed solvent of the above solvents, and the like. The polymerization is not particularly limited as the polymerization initiator, and a polymerization initiator which efficiently generates radicals by action is preferred. The above polymerization can be exemplified by: 2,2,-azobisisobutyronitrile, dimethyl-2,2, azobis; vinegar, 2,2,-azobis[2_(2-flavored wow)琳_2_基) propyl azo compound, ^ (mercapto:, 5; 3 tertiary butyl peroxy) hexane, peroxydicarbonate di('罘 butyl butyl hexyl) ester and other organic Peroxide and the like.姨 For the supply of the feed body 'polymerization initiator, you can connect: ί, should be added to the supply. After the dropwise addition is carried out, the polymerization vessel is heated to a predetermined polymerization temperature, and the initiator and the initiator mixture are added dropwise to the polymerization = dropwise addition monomer, which may be Body: In:, also referred to as "drip addition solvent" two into the "preparation solvent". ) inside the package. In the case where there is no pre-filling of the filler lysine polymerization vessel monomer or polymerization into a polymerization vessel, the container is placed. D%fl is added dropwise to the polymerization in the absence of a filler solvent. The polymerization initiator can be directly dissolved in the monomer or dissolved in a single 20: solution.

u 200836004 可以將僅溶解於滴加溶劑中。 加到聚合容器中;^二口起始劍在同一貯槽内混合後,滴 聚合容器中,還可以自獨立的貯槽滴加到 容器中之前將它們混人,兵^自獨立的貯槽供應到聚合 單體以及聚合起_==、==中。 就滴加速度二^者,同計時進行滴力” 也可以根據單體或〒入二小旦疋速度滴加至滴加結束, 加速度。次來s起始劑的消耗速度多階段地改變滴 产::連續滴加,也可以間斷性地進行滴加。 ♦ 口,皿度較佳的是50〜15(TC。 %本阻組成物是將聚合物(p)溶解於溶劑中的 二物日士 2本發明之光阻組成物用作化學放大型光阻 、、、成物犄,其中進一步溶解有光酸發生劑。 (光酸發生劑) &quot;光酸發生劑可以從能夠用作化學放大型光阻組成物之 光酉文叙生劑的物質中任意選擇。光酸發生劑可以單獨使用 一種,也可以是兩種或兩種以上併用。 (含氮化合物) 化學放大型光阻組成物可以包括含氮化合物。藉由包 括含氮化合物,使光阻圖案形狀、經時放置穩定性等進一 步提高。即,使光阻圖案的斷面形狀更接近於矩形,另外, 雖然半導體元件的量產生產線是對光阻膜進行光照射,夕名 21 200836004 ζοδοοριι 後,行焙烤(ΡΕΒ),之後放置數小時直至其後的顯影處理, 但是在上述放置(經時)時可進一步抑制光阻圖案的斷面形 狀發生劣化。 ^ (有機:敌酸、磷的含氧酸或其衍生物) ^化學放大型光阻組成物中可以包括有機羧酸、磷的含 氧酸或其衍生物(以下將它們統一記作氧化合物。)。藉由 包括氧化合物,可以抑制因含氮化合物的加入而引起的靈 敏度劣化,另外,使光阻圖案形狀'經時放置穩定性= —步提高。 (添加劑) 添本發明之光阻組成物中,根據需要可以包括界面活性 其他猝熄物、增感劑、防光暈劑、保存穩定劑、消泡 =等各種添加劑。上述添加劑只要是該領域中公知的物質 可以使用其中任-種。對上述添加劑的量沒有特別 |民疋,可以適當確定。u 200836004 It can be dissolved only in the dropping solvent. Adding to the polymerization vessel; after the two initial swords are mixed in the same storage tank, the dropping polymerization container can also be mixed with the independent storage tank before being added to the container, and the soldiers are supplied to the polymerization from the independent storage tank. Monomers and polymerizations are in _==, ==. In the case of the drop acceleration, the same time can be used to drop the force. It can also be added to the end of the drop according to the speed of the monomer or the two small deniers. The acceleration of the starter is changed in multiple stages. :: Continuous addition, intermittent addition can also be carried out. ♦ mouth, the degree of dish is preferably 50~15 (TC. % of the composition of the resistance is the two days of the polymer (p) dissolved in the solvent The photoresist composition of the present invention is used as a chemically amplified photoresist, and a composition, in which a photoacid generator is further dissolved. (Photoacid generator) &quot; Photoacid generator can be used as a chemical The photoacid generator may be used singly or in combination of two or more kinds. (Nitrogen-containing compound) Chemically amplified photoresist composition. The material may include a nitrogen-containing compound, and the shape of the photoresist pattern, stability over time, and the like are further improved by including a nitrogen-containing compound, that is, the cross-sectional shape of the photoresist pattern is made closer to a rectangular shape, and in addition, although the semiconductor element is The production line is the photoresist After the light irradiation, the name 21 200836004 ζοδοοριι, the baking is performed, and then left for a few hours until the subsequent development processing, but the cross-sectional shape of the photoresist pattern is further suppressed from deteriorating upon the above placement (time). ^ (Organic: Acidic acid, phosphorus oxyacid or its derivative) ^ Chemically amplified photoresist composition may include organic carboxylic acid, phosphorus oxyacid or its derivatives (hereinafter they are collectively referred to as oxygen compounds) By including an oxygen compound, it is possible to suppress the deterioration of sensitivity due to the addition of the nitrogen-containing compound, and to increase the shape of the photoresist pattern by the stability of the time-setting step. (Additive) Adding the photoresist of the present invention The composition may include various additives such as interfacial activity other quenching substances, sensitizers, antihalation agents, storage stabilizers, defoaming, etc. as needed. The above additives may be used as long as they are well-known in the art - The amount of the above additives is not particularly high, and can be appropriately determined.

對本發明之形成有細·案之基板的製造方法 進行說明。 J 石夕曰曰=、=用旋轉塗佈器等,於欲形成所需細微圖案之 曰曰貝4被加工基板的表面塗佈本發明之紐組成物。铁 羑,將該塗佈有光阻組成物的被加 ς 埃)等進行乾燥,籍此於基板上形成光阻 =紅烤處理(預 接下來,經由光罩對光阻膜照射小於等於250麵 ^ 。作為照射光’較佳較KrF准i 子雷射、細准分子雷射、F2准分子雷射、 22 200836004 20δ00ρΐΓ 射’特別佳的是ArF准分子兩射。、声可、, 還可以心卜 可卿、射電子射線。 ^ 仃次液式曝光,即··使純水、全激2其 虱呋喃、全氟二俨其〜堃一 王鼠-2-丁基四 顯景摩的祕稱細㈣,),使驗 (顯影)將曝光部分溶解於顯影液而除去之 顧^驗顯影液,可以列舉公知的顯影液。 操作,、^被力=水#對基板進行適#的沖洗處理。如此 木'於被加工基板上形成光阻圖宰。 以』:===基板進行適#的熱處理(後洪), 圖案的2,。__除去光阻,從崎到形成有細微 受限:來,說明本發明,但本發明並不 「份」表*「重=份、別§兄明,則各實施例、比較例中的 合物以及^=_作,評鮮合_共聚性、聚 均分子量Mw的測定 得。 用嘁膠滲透層析法經聚苯乙烯換算而求 &lt;GPC條件I〉 T〇S〇h(股)製,T〇soh高速GPC裝置A method of manufacturing a substrate on which the thin film of the present invention is formed will be described. J Shi Xi曰曰 =, = The composition of the present invention is applied to the surface of the substrate to be processed of the mussel 4 to be formed into a desired fine pattern by a spin coater or the like. The shovel, the ruthenium coated with the photoresist composition, and the like are dried, thereby forming a photoresist on the substrate = red baking treatment (previously, the photoresist is irradiated to the photoresist film by 250 or less via the reticle) Surface ^. As the illumination light 'better than KrF quasi-i-thro laser, fine excimer laser, F2 excimer laser, 22 200836004 20δ00ρΐΓ" is particularly good for ArF excimer two shots, sound, and It can be cherished and ejected by electrons. ^ 液 液 液 , , , 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液 液The fine (4), (), and the developer (developing) which dissolves the exposed portion in the developer to remove the developer, may be a known developer. Operation, ^ by force = water # to the substrate for the appropriate # rinse treatment. Thus, wood's formed a photoresist pattern on the substrate to be processed. Heat treatment (post-hong) with the 』:=== substrate, pattern 2,. __Removing the photoresist, from the subsidiary to the formation is slightly limited: to illustrate the present invention, but the present invention does not "part" table * "heavy = part, § 兄 brother, then in the examples, comparative examples The compound and ^=_, the evaluation of the freshness_copolymerization, the poly-average molecular weight Mw was determined. Using the silica gel permeation chromatography to obtain the polystyrene conversion <GPC condition I> T〇S〇h System, T〇soh high speed GPC device

Shodex GPC K-805L(商品名),Shodex GPC K-805L (trade name),

200836004 ΖΟδΟΟρίΙ HLC-8220GPC(商品名); 分離柱:昭和電工製 將3根串聯; 測定溫度:40°C ; 溶出液·· THF ; 試樣:將約20 mg的聚合物(P)溶解於5 ml的THF中, 用0.5 μιη的薄膜過濾器過濾而得到的溶液; 流量:1 ml/min 注入量·· 0.1 ml 檢測器:差示折射計 檢量線I :將約20 mg的標準聚苯乙烯溶解於5mi的 THF中,用〇.5 μιη的薄膜過濾器過濾,使用所得溶液,按 照上述條件注人到分離柱中,求出溶出時間與分子量的關 係。標準聚苯乙烯使用以下Tos〇h製的標準聚苯乙烯(均為 商品名)。 F-80 (Mw= 706,000) F-20(Mw= 190,000) F_4 (Mw = 37,900) F-l (Mw= 10,200) A-2500 (Mw = 2,630) A-500 (Mw二 682、578、474、370、260 的混合物)。 2·聚合物的分離收集 分子量大於聚合物(Ρ)的質量平均分子量(Mw(P))的聚 合物(PH)以及分子量小於等於聚合物(P)的質量平均分子量 24 200836004 ΔΌουυμη (Mw(P))的聚合物(pL),藉由以下方法(步驟⑴〜(4)),自聚 合物(P)中分離收集。 (1) 按照上述GPC條件I,求出聚合物(P)的質量平均分 子量(Mw(P))。 (2) 將GPC條件變更為下述GPC條件II,使用標準聚 苯乙烯,求出檢量線11(溶出時間與分子量的關係)。 (3) 在檢量線II中,求出分子量為上述(1)求出的Mw(P) 的溶出時間T。 (4) 在下述GPC條件II下,將聚合物(p)的溶液注入到 分取柱中,分離收集在上述(3)求出的溶出時間T之前溶出 的成分作為PH,分離收集在該溶出時間T之後溶出的成分 作為PL。 &lt;GPC 條件 II〉 裝置:Tosoh(股)製,Tosoh高速GPC裝置 HLC-8220GPC(商品名) 分取柱:昭和電工製,sh〇dexGpCK_2〇〇5(商品名), 將2根串聯 測定溫度:40。(: 浴出液·丁 试樣·將約12〇mg的聚合物(p)溶解於5ml的thf中, 用0·5 μπι的薄膜過濾器過濾而得到的溶液 流量:4 ml/min 注入量:1 ml 檢測為:差示折射計 25 200836004 檢量線II :將約120 mg的標準聚苯乙烯溶解於5ml 的THF中,用0·5 μηι的薄膜過濾器過濾,使用所得溶液, 知知、上述條件注入到分取柱中,求出溶出時間與分子量的 關係。標準聚苯乙烯使用以下Tosoh製的標準聚苯乙稀(均 為商品名)。 F-80 (Mw= 706,000) F-20 (Mw= 190,000) F-4 (Mw= 37,900) F-l (Mw= 10,200) A-2500 (Mw = 2,630) A-500 (Mw = 682、578 ' 474、370、260 的混合物)。 3·聚合物的組成(各構成單元的含有率)分析 關於各構成單元的含有率,在可以藉由】H-NMR測定 求出的情況下,藉由測定求出;因質子峰的重疊 等而無法藉由〗H_NMR測定求出的情況下,藉由nc—NMR 測定求出。 ]H-NMR測定中,使用日本電子(股)製gSX_4〇〇型 FT-NMR (商品名),將約5 wt%的聚合物溶液(氘化氯仿溶 液或氖化二甲基亞颯溶液)注入到直徑為5 mm(p的試管 中,在觀測頻率400 MHz、單脈衝模式下進行糾次累計。 應說明的是,就測定溫度而言,以氘化氯仿作為溶劑時, 在4(TC下進行測定;以氘化二甲基亞砜作為溶劑時,在6〇 °C下進行測定。 13C-NMR 測定中,使用 Vadan Techn〇1〇gies 社製 26 200836004 UNITY-mOVA型FT_NMR(商品名),將約2〇 wt%的聚合 物的氘化二曱基亞颯溶液裝入直徑為5 mm(p的試管中,在 測定溫度6(TC、觀測頻率125 MHz下,利用除去了核間 奥氏效應(NOE)的質子完全退柄法進行5⑻⑻次 。 對於聚合物(P)和自聚合物(P)中分離收集的聚;物A) 中的内s旨骨架錢水性基_含#率,分麻藉由nmr 測定的内S旨骨架或親水性基團之峰的積分值相對於聚合物 之所有峰的積分值之和的比率而求出。 4·聚合物的評價試驗 關於所得聚合物溶液,將400份的聚合物溶液、2份 的光酸發生劑三苯基硫三氟曱磺酸酯(triphenyl sulf〇nium200836004 ΖΟδΟΟρίΙ HLC-8220GPC (trade name); Separation column: 3 sets in series by Showa Denko; Measurement temperature: 40 ° C; Eluate · · THF; Sample: Dissolve about 20 mg of polymer (P) in 5 a solution obtained by filtering with a 0.5 μm membrane filter in ml of THF; flow rate: 1 ml/min injection amount·· 0.1 ml detector: differential refractometer calibration line I: about 20 mg of standard polyphenylene Ethylene was dissolved in 5 mi of THF, and filtered through a membrane filter of 55 μm, and the obtained solution was injected into a separation column under the above conditions to determine the relationship between the elution time and the molecular weight. Standard polystyrene uses the following standard polystyrenes (to be trade names) manufactured by Tos〇h. F-80 (Mw= 706,000) F-20(Mw= 190,000) F_4 (Mw = 37,900) Fl (Mw= 10,200) A-2500 (Mw = 2,630) A-500 (Mw two 682, 578, 474, 370, a mixture of 260). 2. Separation of the polymer The polymer (PH) having a molecular weight greater than the mass average molecular weight (Mw(P)) of the polymer (Ρ) and the mass average molecular weight of the polymer (P) is less than or equal to the mass average molecular weight of the polymer (P) 24 200836004 ΔΌουυμη (Mw(P) The polymer (pL) of the)) is isolated and collected from the polymer (P) by the following method (steps (1) to (4)). (1) The mass average molecular weight (Mw(P)) of the polymer (P) was determined according to the above GPC condition I. (2) The GPC condition was changed to the following GPC condition II, and the calibration curve 11 (the relationship between the elution time and the molecular weight) was determined using standard polystyrene. (3) In the calibration curve II, the elution time T at which the molecular weight is Mw (P) obtained in the above (1) is obtained. (4) The solution of the polymer (p) is injected into the fractionation column under the following GPC condition II, and the component eluted before the dissolution time T obtained in the above (3) is separated and collected as the pH, and the solution is separated and collected. The component eluted after time T was taken as PL. &lt;GPC Condition II> Device: Tosoh Co., Ltd., Tosoh High-speed GPC Device HLC-8220GPC (trade name) Separation column: manufactured by Showa Denko, sh〇dexGpCK_2〇〇5 (trade name), two connected temperatures are measured in series :40. (: bath effluent and butyl sample) A solution of about 12 〇mg of polymer (p) dissolved in 5 ml of thf and filtered with a membrane filter of 0·5 μm was used: 4 ml/min. :1 ml Tested as: Differential Refractometer 25 200836004 Check Line II: Dissolve about 120 mg of standard polystyrene in 5 ml of THF, filter with a 0.5 μm μm membrane filter, and use the resulting solution. The above conditions were injected into the fractionation column to determine the relationship between the elution time and the molecular weight. The standard polystyrene used the following standard polystyrene (trade name) manufactured by Tosoh. F-80 (Mw=706,000) F- 20 (Mw= 190,000) F-4 (Mw= 37,900) Fl (Mw= 10,200) A-2500 (Mw = 2,630) A-500 (Mw = 682, 578 '474, 370, 260 mixture). The composition of the material (the content ratio of each constituent unit) is analyzed by the content ratio of each constituent unit. When it can be determined by H-NMR measurement, it is determined by measurement; it cannot be borrowed due to overlapping of proton peaks and the like. In the case of the measurement by H_NMR measurement, it was determined by nc-NMR measurement. In the H-NMR measurement, gSX_4 manufactured by JEOL Ltd. was used. FT-NMR (trade name), about 5 wt% of a polymer solution (deuterated chloroform solution or deuterated dimethyl hydrazine solution) was injected into a test tube having a diameter of 5 mm (p, 400 MHz, In the single pulse mode, the correction is performed. It should be noted that when the temperature is measured, when deuterated chloroform is used as the solvent, the measurement is performed at 4 (TC); when deuterated dimethyl sulfoxide is used as the solvent, at 6 The measurement was carried out at 〇 ° C. In the measurement of 13 C-NMR, about 2 〇 wt% of the polymerized deuterated dimercapto was used using a VA_NMR (manufactured name) manufactured by Vadan Techn〇1〇gies Co., Ltd. 26200836004 UNITY-mOVA type FT_NMR (trade name) The ruthenium solution was placed in a test tube at a diameter of 5 mm (p, 5 (8) (8) times at a measurement temperature of 6 (TC, observation frequency of 125 MHz, using a proton-completed stochastic method with the inter-nuclear austenite effect (NOE) removed. The substance (P) and the poly(A) separated from the polymer (P); the internal s of the substance A) is composed of a water-based base_containing a rate, and the internal S is determined by nmr to be a skeleton or a hydrophilic group. The integral value of the peak is obtained from the ratio of the sum of the integral values of all the peaks of the polymer. The resultant polymer solution, 400 parts of the polymer solution, 2 parts of a photoacid generator triphenylsulfonium Yue trifluoromethyl sulfonate (triphenyl sulf〇nium

Mate)和溶劑PGMEA混合,使聚合物濃度為ΐ2·5, =成均勻溶液後,用孔徑為〇·!卿的薄膜過濾器過遽,配 衣光阻組成物溶液。於矽晶圓上旋塗上述所得組成物,使 用熱板在120°C下預烘60秒,製造膜厚為〇·3 μιη的光阻 膜:經由光罩以波長193 nm白勺ArF准分子雷射對上述光 阻月果進行曝光後,使用熱板在12(rc下曝光6〇秒鐘,之後 進行f烤。接下來,使用2.38 wt%的氳氧化四甲基銨水溶 ,在室溫下進行顯影,用純水洗滌、乾燥,製造光阻圖案。 按照下述標準評價光阻圖案。 夬陷·使用缺陷檢測裝置,以比較例1的缺陷為1⑽%, 進行評價。 〇·缺陷小於等於10〇/〇 △•缺陷小於等於70% 27 200836004 ^Kjouuyu χ : 100% ®案鮮@度:以比較例i的線與間隔圖案為基準,由光阻 圖案的SEM照片目視判定0.16 μηι的線與間隔圖案。 〇··鮮明且精度良好地得到圖案。 △:較比較例1鮮明。 X :與比較例1相同。圖案不鮮明。 [實施例1] 在氮氣環境下,向具備氮導入口、攪拌機、冷凝器、 滴液漏斗以及溫度計的燒瓶中裝入393 〇份的仏甲基丙烯 酿氧基干丁内酯(具有内酯骨架的單體,以下記作 GBLMA。)、7740份的乳酸乙酯。將燒瓶放入熱水浴中, 一邊攪拌燒瓶内部,一邊使水浴溫度上升至8〇。匚^ 之後使用滴液漏斗用4小時向燒瓶内滴加下述混合 物,進一步保持8(TC的溫度3小時。 2570份的GBLMA、3931份的2-曱基-2-金剛烷基甲基 丙烯酸酯(具有酸離去性基團的單體。以下記作 MAdMA。)、1982份的3-羥基金剛烷基甲基丙烯酸酯(具 有親水性基團的單體。以下記作HAdMA。)、12730份的 乳酸乙酯、1020份的二曱基-2,2’-偶氮二異丁酸酯(和光純 藥工業社製,V601(商品名))。 將所得反應溶液邊攪拌邊滴加到約1〇倍量的甲醇和 水的混合溶劑(甲醇/水= 80/20容量比(體積比))中,得到白 色析出物(聚合體P1)的沉澱。將過濾沉殺後,再次投入到 相對於上述反應溶液為約10倍量的甲醇和水的混合溶劑 28 200836004 ^UOUU]Jii (甲醇/水= 90/10容量比)中,一邊攪拌一邊洗滌沉澱。然 後,過濾洗滌後的沉澱,得到聚合物濕粉。將10份聚合物 濕粉在減壓下於40°C乾燥約40小時。評價所得聚合物 P1。結果如表1所示。P[B]/PH[B]滿足式(1)。Mate) is mixed with the solvent PGMEA to make the polymer concentration ΐ2·5, = into a homogeneous solution, and then the film is coated with a photoresist filter having a pore size of 〇·! The composition obtained above was spin-coated on a wafer, and pre-baked at 120 ° C for 60 seconds using a hot plate to produce a photoresist film having a film thickness of 〇·3 μm: ArF excimer at a wavelength of 193 nm via a mask. After exposing the above-mentioned photoresist moon fruit to the laser, it was exposed to a hot plate at 12 (rc for 6 sec seconds, followed by f baking. Next, using 2.38 wt% of tetramethylammonium hydroxide dissolved in water at room temperature. The development was carried out, and the resist pattern was produced by washing with pure water and drying. The photoresist pattern was evaluated according to the following criteria: The defect detection device was used, and the defect of Comparative Example 1 was evaluated as 1 (10)%. Equal to 10〇/〇△• Defect is less than or equal to 70% 27 200836004 ^Kjouuyu χ : 100% ® Case Freshness @度: Based on the line and space pattern of Comparative Example i, the SEM image of the resist pattern is used to visually determine 0.16 μηι线······························································· , mixer, condenser, dropping funnel and temperature The flask was charged with 393 parts of hydrazine methacrylic acid oxybutyrolactone (monomer having a lactone skeleton, hereinafter referred to as GBLMA), and 7740 parts of ethyl lactate. The flask was placed in a hot water bath. The temperature of the water bath was raised to 8 Torr while stirring the inside of the flask. Then, the following mixture was added dropwise to the flask over 4 hours using a dropping funnel, and further kept at 8 (TC temperature for 3 hours. 2570 parts of GBLMA, 3931) Parts of 2-mercapto-2-adamantyl methacrylate (monomer having an acid-releasing group. Hereinafter referred to as MAdMA.), 1982 part of 3-hydroxyadamantyl methacrylate (having A monomer of a hydrophilic group, hereinafter referred to as HAdMA.), 12730 parts of ethyl lactate, and 1020 parts of dimercapto-2,2'-azobisisobutyrate (manufactured by Wako Pure Chemical Industries, Ltd., V601) (trade name)) The obtained reaction solution was added dropwise to a mixed solvent of methanol and water (methanol/water = 80/20 capacity ratio (volume ratio)) with stirring to obtain a white precipitate ( Precipitation of the polymer P1). After the filtration is immersed, it is again put into about 10 times relative to the above reaction solution. In a mixed solvent of methanol and water 28 200836004 ^UOUU]Jii (methanol/water = 90/10 capacity ratio), the precipitate is washed while stirring. Then, the washed precipitate is filtered to obtain a polymer wet powder. The wet powder was dried under reduced pressure at 40 ° C for about 40 hours. The obtained polymer P1 was evaluated. The results are shown in Table 1. P [B] / PH [B] satisfies the formula (1).

t 將剩下的聚合物濕粉投入到88000份的PGMEA中, 完全溶解後使其通過孔徑為0·04 μιη的尼龍製過濾器(日本 PALL 社製,P’NYLON N66FILTER0.04M (商品名)),過濾 聚合物溶液。 將t合物 &gt;谷液在減壓下加熱,鶴去甲醇和水,進_^步 餾去PGMEA,得到聚合物的濃度為25 wt%的聚合物pi。 此時’最高到達真空度為0/7kPa,最高溶液溫度為65〇c, 德去時間為8小時。 [實施例2] 在氮氣環境下,向具備氮導入口、攪拌機、冷凝哭、 滴液漏斗以及溫度計的燒瓶中裒入198〇份的HAdMA、 7610份的乳酸乙醋。將燒瓶放入熱水浴中,一邊攪掉声瓿 内部,一邊使水浴溫度上升至如。^。 凡 物 之後,使用滴液漏斗用4小時向燒瓶内滴加下述混合 進一步保持80°C的溫度3小時。 2856 份 GBLMA、 3931 份 MAdMA、 1784 份 HAdMA、 12860份乳酸乙酯、 1062份《一曱基-2,2,-偶氮二g 丁酸酯(和光純藥工業社 29 200836004 26866pif 製,V601(商品名))。 對於所得反應溶液,利用與實施例i相同之方 刼作,付到聚合物P2。聚合物P2的評價結果如表i仃 P[C]/PH[C]滿足式(2)。 。 另外,使用聚合物P2,利用與實施例i相同之方 行操作5得到聚合物P2溶液。 [實施例3] 、、在氮氣環境下’向具備氮導入口、攪拌機、冷凝器、 滴液漏斗以及溫度計的燒瓶中裝人286.Q份的GBl·(單 體⑻)、198.0份的HAdMA(單體(c))、7973份的乳酸乙酯。 將燒瓶放人熱水浴巾,―魏拌燒瓶㈣…邊使水浴溫 度上升至80°C。 之後,使用滴液漏斗用4小時向燒瓶内滴加下述混合 物,進一步保持80°C的溫度3小時。 2570 份 GBLMA、 3931 份 MAdMA、 1784 份 HAdMA、 12428份乳酸乙g旨、 1062份二甲基·2,2Μ禹氮二異丁酸酯(和光純藥工業社 製,V601(商品名))。 對於所得反應溶液,利用與實施例1相同之方式進行 操作,得到聚合物P3。聚合物P3的評價結果如表1所示。 P[B]/PH[B]滿足式⑴。並且,p[C]/pH[c]滿足式⑺。 使用聚合物P3,利用與實施例1相同之方式進行操 30 200836004 26865ριί 作’付到聚合物Ρ3溶液。 [實施例4] 除了將滴加溶液中二曱基、2 2, μ ^ 从% ^ I / ’z &quot;偶氮二異丁酸酯(和光 '、’ /彡、。(股)製,V60K商品名))的使用量變更為250份以 外’利用與實施例1相同之方式進行操作,得到聚合物P4。 所得聚合物P4的各物理性質值如表1所示。P[B]/Ph[B]滿 足式(1)。並且,p[c]/pH[c]滿足式(2)。t The remaining polymer wet powder was put into 88,000 parts of PGMEA, and completely dissolved and passed through a nylon filter having a pore size of 0·04 μm (P'NYLON N66FILTER0.04M (trade name), manufactured by PALL Corporation, Japan) ), filtering the polymer solution. The t compound &gt; trough solution was heated under reduced pressure, and the methanol and water were removed from the crane, and PGMEA was distilled off to obtain a polymer pi having a polymer concentration of 25 wt%. At this time, the highest reached vacuum was 0/7 kPa, the highest solution temperature was 65 〇c, and the de-de-time was 8 hours. [Example 2] In a nitrogen atmosphere, a flask equipped with a nitrogen inlet, a stirrer, a condensed crying, a dropping funnel, and a thermometer was placed in 198 parts of HAdMA and 7610 parts of lactic acid ethyl acetate. The flask was placed in a hot water bath, and the temperature of the water bath was raised to the same level while stirring the inside of the sonic. ^. After the mixture, the following mixture was added dropwise to the flask over 4 hours using a dropping funnel, and the temperature was maintained at 80 ° C for 3 hours. 2856 copies of GBLMA, 3931 parts of MAdMA, 1784 parts of HAdMA, 12,860 parts of ethyl lactate, and 1062 parts of "indolyl-2,2,-azodi-g-butyrate (Wako Pure Chemical Industries, Ltd. 29 200836004 26866pif, V601 ( Product name)). The obtained reaction solution was applied to the polymer P2 in the same manner as in Example i. The evaluation result of the polymer P2 satisfies the formula (2) as shown in Table i仃 P[C]/PH[C]. . Further, using Polymer P2, a polymer P2 solution was obtained by the same operation as in Example i. [Example 3] 286.Q parts of GBl (monomer (8)) and 198.0 parts of HAdMA were placed in a flask equipped with a nitrogen inlet, a stirrer, a condenser, a dropping funnel, and a thermometer under a nitrogen atmosphere. (Monomer (c)), 7973 parts of ethyl lactate. The flask was placed in a hot water bath towel, and the flask was heated to 80 ° C while the flask was heated. Thereafter, the following mixture was added dropwise to the flask over 4 hours using a dropping funnel, and the temperature was further maintained at 80 ° C for 3 hours. 2,570 parts of GBLMA, 3931 parts of MAdMA, 1784 parts of HAdMA, 12,428 parts of lactic acid, and 1,062 parts of dimethyl-2,2 oxadiisobutyrate (Wako Pure Chemical Industries, V601 (trade name)). The obtained reaction solution was operated in the same manner as in Example 1 to give a polymer P3. The evaluation results of the polymer P3 are shown in Table 1. P[B]/PH[B] satisfies the formula (1). Further, p[C]/pH[c] satisfies the formula (7). Using the polymer P3, the solution of the polymer Ρ3 was carried out in the same manner as in Example 1. [Example 4] Except that the dimercapto group, 2 2, μ ^ from the dropwise addition solution was prepared from % ^ I / 'z &quot; azobisisobutyrate (and light ', ' / 彡, . In the same manner as in Example 1, except that the amount of use of the V60K product name) was changed to 250 parts, the polymer P4 was obtained. The physical property values of the obtained polymer P4 are shown in Table 1. P[B]/Ph[B] is full (1). Further, p[c]/pH[c] satisfies the formula (2).

使用聚合物P4,利用與實旅例1相同之方式進行操 作,得到聚合物P4溶液。 &lt;比較例1&gt; 在氮氣環境下,向具備氮導八口、攪拌機、冷凝器、 滴液漏斗以及溫度計的燒瓶中裝入7310份的乳酸乙酯。將 燒瓶放入熱水浴中,一邊攪拌燒難内部,一邊使水浴溫度 上升至80°C。 之後,使用滴液漏斗用4小晴向燒瓶内滴加下述混合 物,進一步保持80°C的溫度3小時。 2856 份 GBLMA、 3931 份 MAdMA、 1982 份 HAdMA、 13150份乳酸乙g旨、 1062份二曱基-2,2,-偶氮;異丁酸酯(和光純藥工業社 製,V601(商品名))。 對於所得反應溶液,利用與實施例1相同之方式進行 操作,得到聚合物P,1。聚合物P’1的評價結果如表i所 31Using Polymer P4, the same procedure as in the case of Convention 1 was carried out to obtain a polymer P4 solution. &lt;Comparative Example 1&gt; In a nitrogen atmosphere, 7310 parts of ethyl lactate was placed in a flask equipped with a nitrogen gas introduction port, a stirrer, a condenser, a dropping funnel, and a thermometer. The flask was placed in a hot water bath, and the temperature of the water bath was raised to 80 ° C while stirring the inside of the furnace. Thereafter, the following mixture was added dropwise to the flask using a dropping funnel using a dropping funnel, and the temperature was further maintained at 80 ° C for 3 hours. 2856 copies of GBLMA, 3931 parts of MAdMA, 1982 parts of HAdMA, 13150 parts of lactic acid, and 1,062 parts of dimercapto-2,2,-azo; isobutyrate (manufactured by Wako Pure Chemical Industries, Ltd., V601 (trade name) ). The obtained reaction solution was operated in the same manner as in Example 1 to give the polymer P,1. The evaluation results of the polymer P'1 are shown in Table i.

200836004 Z05D0P1I 示。Ρ[Β]/ΡΗ[Β]不滿足式(1)。並且,P[C]/PH[C]不滿足式(2)。 使用聚合物p’l,利用與實施例1相同之方式進行操 作,得到聚合物P’l溶液。 &lt;比較例2&gt; 在氮氣環境下,向具備氮導入口、攪拌機、冷凝器、 滴液漏斗以及溫度計的燒瓶中裝入全量的393·〇份的 MAdMA、7900份的乳酸乙酯,一邊攪拌,一邊使水浴溫 度上升至80°C。 之後,使用滴液漏斗用4小時向燒瓶内滴加下述混合 物進行聚合,進一步在此溫度下聚合3小時。 2856 份 GBLMA、 3538 份 MAdMA、 1982 份 HAdMA、 12560份乳酸乙酯、 250份二曱基_2,2M禺氮二異丁酸醋(和光純藥工業(股) 製,V-601(商品名))。 對於所得反應溶液,利用與實施例1相同之方式進行 操作,得到聚合物P’2。聚合物P’2的評價結果如表1所 示。P[B]/PH[B]不滿足式⑴。並且,P[C]/Ph[C]不滿足式(2)。 使用聚合物P,2,利用與實施例1相同之方式進行操 作,得到聚合物P’2溶液。 &lt;比較例3&gt; 除了將滴加溶液中二曱基_2,2、偶氮二異丁酸酯(和光 純藥工業(股)製,V601(商品名))的使用量變更為261份以 32 200836004 268ό6ριί m與錄例η目同之方以行操作,得到聚合物 。所传聚合物Ρ,3的評價結果如表】所示。準]/Ρη[β] 不滿足式(1)。並且,P[C]/PH[C]不滿足式(2)。 使用聚合物P,3,利用與實施例]相同之方式進行操 作,得到聚合物P,3溶液。 &lt;評價結果&gt; 使用實施例的聚合物時,光阻膜均具有優異的解析 度、焦點深度(DOF)及缺陷,並鮮明且精度良好地得到〇 μ μπι的線與間隔圖案。但是,使用比較例的聚合物時,光 阻膜的解析度、焦點深度(DOF)差,該圖案的鮮明度不夠。 200836004200836004 Z05D0P1I shows. Ρ[Β]/ΡΗ[Β] does not satisfy the formula (1). Also, P[C]/PH[C] does not satisfy the formula (2). Using the polymer p'1, the same procedure as in Example 1 was carried out to obtain a polymer P'l solution. &lt;Comparative Example 2&gt; A full amount of 393 g of MAdMA and 7900 parts of ethyl lactate were placed in a flask equipped with a nitrogen inlet, a stirrer, a condenser, a dropping funnel, and a thermometer under a nitrogen atmosphere, and stirred. While raising the temperature of the water bath to 80 °C. Thereafter, the following mixture was added dropwise to the flask over a period of 4 hours using a dropping funnel to carry out polymerization, and further polymerization was carried out at this temperature for 3 hours. 2856 copies of GBLMA, 3538 parts of MAdMA, 1982 parts of HAdMA, 12560 parts of ethyl lactate, 250 parts of dimercapto 2,2M bismuth diisobutyric acid vinegar (Wako Pure Chemical Industries, Ltd., V-601 (trade name) )). The obtained reaction solution was operated in the same manner as in Example 1 to give the polymer P'2. The evaluation results of the polymer P'2 are shown in Table 1. P[B]/PH[B] does not satisfy the formula (1). Also, P[C]/Ph[C] does not satisfy the formula (2). Using the polymers P, 2, the same procedure as in Example 1 was carried out to obtain a polymer P'2 solution. &lt;Comparative Example 3&gt; In addition to the amount of dimercapto-2,2, azobisisobutyrate (manufactured by Wako Pure Chemical Industries, Ltd., V601 (trade name)), the amount of use was changed to 261 parts. The polymer was obtained by operating in the same manner as in the case of 32 200836004 268 ό 6ριί m. The evaluation results of the polymer Ρ, 3, are shown in the table. Quasi]/Ρη[β] does not satisfy the formula (1). Also, P[C]/PH[C] does not satisfy the formula (2). Using the polymers P, 3, the same procedure as in Example 4 was carried out to obtain a polymer P, 3 solution. &lt;Evaluation Results&gt; When the polymer of the example was used, the photoresist film had excellent resolution, depth of focus (DOF), and defects, and a line and space pattern of 〇 μ μm was obtained with sharpness and precision. However, when the polymer of the comparative example was used, the resolution and depth of focus (DOF) of the resist film were inferior, and the sharpness of the pattern was insufficient. 200836004

【1竺 評價結果 ί圖案鮮 i明度 〇 〇 〇 〇 X &lt;] X 〇 〇 〇 〇 X &lt;] X 親水性基團含有率 ! P[C]/ I Ph[C] 1.00 0.94 I 0.97 ! 0.99 1.00 5 1.00 Ph[C] 17.8 18.5 1 17.8 L——18.3 I 1 18.3 1 P[C] ;17.8 \ 18.0 | 17.9 17.5 17.8 | 18.5 1 18.3 1 1 内酯骨架含有率 P[B]/ Ph[B] 1 0-95 1.00 1 | 0.97 0.96 | 1.00 s 1 i.oo 1 Ph[B] 40.0 L 41:〇—1 LiMj 1 40.0 1 L」g·5 丨 41.0 1 P[B] 40.0 | 39.9 1 1 39.8 i | 40.9 | 39.8 40.3 ! 40.8 I 酸離去性基團含有率 P[A]/ Ph[A] 〇 〇 r—^ 1—1 o r—^ 0.98 ! ο r—η Ph[A] 40.3 40.9 ! 40.5 | 39.9 1 L—i2—:.g… 42.2 1 40.7 1 P[A] 42.2 42.3 l-il6—, LiMJ 」1:2—. 1 40.9 1 Mw/Mn r—' VD r—&lt; cn VO (N 卜 τ—&lt; ί Mw 5,500 5,300 1 5,400 1 9,600 5,200 9,900 1 9,700 1 |實施例ί | |實施例2 1 |實施例3 1 實施例4 比較例1 比較例2 比較例3 ι 200836004 使用本發明之光阻聚合物,可以得到能夠形成解析度 高、焦點深度(DOF)及缺陷優異的光阻膜的光阻組成物。 另外,本發明之光阻聚合物的製造方法,可以生產效 率良好地製造具有上述特性的光阻聚合物。 Γ 並且,本發明之光阻聚合物及光阻組成物,可以適用 =^DUV准分子雷射微影、這些浸液式微影以及電子射線 微影、特概ArF准分子雷雜影以及此浸液式微影。 另外,利用本發明之圖案製造方法,可以形 的細微光阻圖安 0 乂 q 7月没 的基板。錢可以製造形成有高精度的細微圖案 本發明已以較佳實施觸露如上Hjt非田 【圖式間單說明】 疋f為準。 Μ 【主要元件符號說明】[1竺 evaluation result ί pattern fresh i 〇〇〇〇X &lt;] X 〇〇〇〇X &lt;] X hydrophilic group content rate! P[C]/ I Ph[C] 1.00 0.94 I 0.97 ! 0.99 1.00 5 1.00 Ph[C] 17.8 18.5 1 17.8 L——18.3 I 1 18.3 1 P[C] ;17.8 \ 18.0 | 17.9 17.5 17.8 | 18.5 1 18.3 1 1 lactone skeleton content P[B]/ Ph[ B] 1 0-95 1.00 1 | 0.97 0.96 | 1.00 s 1 i.oo 1 Ph[B] 40.0 L 41: 〇-1 LiMj 1 40.0 1 L"g·5 丨41.0 1 P[B] 40.0 | 39.9 1 1 39.8 i | 40.9 | 39.8 40.3 ! 40.8 I Acid leaving group content P[A]/ Ph[A] 〇〇r—^ 1—1 or—^ 0.98 ! ο r—η Ph[A] 40.3 40.9 ! 40.5 | 39.9 1 L—i2—:.g... 42.2 1 40.7 1 P[A] 42.2 42.3 l-il6—, LiMJ “1:2—. 1 40.9 1 Mw/Mn r—' VD r—&lt; Cn VO (N ττ-&lt; ί Mw 5,500 5,300 1 5,400 1 9,600 5,200 9,900 1 9,700 1 |Example ί | |Example 2 1 |Example 3 1 Example 4 Comparative Example 1 Comparative Example 2 Comparative Example 3 200836004 Using the photoresist polymer of the present invention, it is possible to obtain a high resolution, a depth of focus (DOF) and excellent defects. Further, in the method for producing a photoresist polymer of the present invention, a photoresist polymer having the above characteristics can be produced efficiently. Γ And, the photoresist polymer of the present invention and the photoresist composition For the object, it is possible to apply =^DUV excimer laser lithography, these immersion lithography and electron ray lithography, special ArF excimer thunder ray and this immersion lithography. In addition, by using the pattern manufacturing method of the present invention, The shape of the fine photoresist can be formed in the form of a substrate that has not been in July. Money can be manufactured to form a fine pattern with high precision. The present invention has been exposed by a preferred embodiment as above. Hjt Nonfield [Illustration between drawings] 疋f is准 [Main component symbol description]

Claims (1)

200836004 ζοουυριι 十、曱請專利範圍: ι·-種光阻聚合物’該聚合物(ρ)具有酸 和内S旨骨架(Β)或親水性基團(c),且 基團(Α) (2): 疋卜述式⑴或式 Ρ[Β]/ΡΗ[Β]$0·99 …(1) P[C]/Ph[C]^0.99-(2) (其中,P[B] ··聚合物(P)中的内醋骨架的 Ph[B]:聚合物(PH)中的内酯骨架的含有率,/', P[C] ·聚合物(P)中的親水性基團的含有率 ΡηΜ:聚合物(PH)中的親水性基團的含有率, 聚合物(PH)為藉由凝膠渗透層析 收集的聚合物,且其分子量大 ^物曰(I)中分離 量(Mw(P));以及 胃)的貝!平均分子 聚合物中的内酯骨架、親水性基團的 NMR測定的内醋骨架或親水性基 二土: . #由 聚合物之所有峰的積分值之和的比率)。積讀相對於 2種光阻聚合物的製造方法 請專利範圍第1頊跖、+、, 元丨且來合物為如申 命反廊述之光阻聚合物,該方法為: π π I!的聚合溶劑中供應具有酸離去性; 早體tt起始劑,以進行溶液自由基聚合二t ! ㈣單贱具有麻性 範圍第!項所述物該絲組成物包含有如申請專利 4.-種以細微圖案形成基板的製造方法,該方法包括: 36 200836004 ζοδοοριι 於被加工基板上塗佈如申請專利範圍第3項所述之光 阻組成物而形成光阻膜的製程; 對上述光阻膜照射小於等於250 nm之波長的光而形 成潛像的製程;以及 用顯影液對形成有潛像的光阻膜進行顯影處理的製 程0 37 200836004 ΖΟδΟΟρυ 七、 指定代表圖·· (一) 本案指定代表圖為:無 (二) 本代表圖之元件符號簡單說明: 無 八、 本案若有化學式時,請揭示最能顯示發明特徵 的化學式: 無200836004 ζοουυριι X, 曱 专利 patent scope: ι·- kinds of photoresist polymer 'The polymer (ρ) has an acid and an internal S skeleton (Β) or a hydrophilic group (c), and a group (Α) ( 2): 疋 述 ( (1) or Ρ Β [Β] / ΡΗ [Β] $0 · 99 ... (1) P [C] / Ph [C] ^ 0.99 - (2) (where P [B] · · Ph[B] of the internal vinegar skeleton in the polymer (P): content of the lactone skeleton in the polymer (PH), /', P[C] · hydrophilic group in the polymer (P) The content rate ΡηΜ: the content of the hydrophilic group in the polymer (PH), the polymer (PH) is a polymer collected by gel permeation chromatography, and its molecular weight is large (I) (Mw(P)); and the stomach of the shell! The internal lactic acid skeleton or the hydrophilic group in the average molecular polymer, the internal vinegar skeleton or the hydrophilic base of the hydrophilic group, the ratio of the sum of the integral values of all the peaks of the polymer. For the preparation method of the two kinds of photoresist polymers, please refer to the patent range 1st, +, and 丨, and the conjugate is a photoresist polymer such as 申 反 , ,, the method is: π π I The supply of the polymerization solvent has acid leaving; early body tt initiator to carry out solution free radical polymerization two t! (D) single 贱 has a hemp range! The silk composition comprises a manufacturing method for forming a substrate in a fine pattern as in the patent application 4. The method comprises: 36 200836004 ζοδοοριι coating the substrate as described in claim 3 a process for forming a photoresist film by blocking a composition; a process of forming a latent image by irradiating light of a wavelength of 250 nm or less to the photoresist film; and a process of developing a photoresist film having a latent image by a developing solution 0 37 200836004 ΖΟδΟΟρυ VII. Designated representative diagram · (1) The representative representative figure of this case is: None (2) The symbol of the symbol of this representative figure is simple: No. If there is a chemical formula in this case, please reveal the best indication of the characteristics of the invention. Chemical formula: none
TW96150578A 2006-12-27 2007-12-27 Resist polymer, resist composition, and method of producing substrate formed with fine pattern TW200836004A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006350766 2006-12-27
JP2007043981 2007-02-23

Publications (1)

Publication Number Publication Date
TW200836004A true TW200836004A (en) 2008-09-01

Family

ID=39588504

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96150578A TW200836004A (en) 2006-12-27 2007-12-27 Resist polymer, resist composition, and method of producing substrate formed with fine pattern

Country Status (3)

Country Link
JP (1) JP5584980B2 (en)
TW (1) TW200836004A (en)
WO (1) WO2008081822A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104159937B (en) * 2012-03-05 2016-05-18 三菱丽阳株式会社 The manufacture method of copolymer and manufacture method, anti-corrosion agent composition and substrate for photoetching
WO2015033960A1 (en) 2013-09-03 2015-03-12 三菱レイヨン株式会社 Copolymer for semiconductor lithography, resist composition, and substrate production method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2863565B2 (en) * 1989-09-20 1999-03-03 ダイセル化学工業株式会社 Method for producing thermoplastic polymer for photopolymerizable composition and photopolymerizable composition
JPH1053620A (en) * 1996-06-03 1998-02-24 Nippon Shokubai Co Ltd Thermoplastic copolymer and its production
JP4187815B2 (en) * 1996-12-09 2008-11-26 日本曹達株式会社 (Meth) acrylic ester copolymer and method for producing the same
JPH10237113A (en) * 1996-12-26 1998-09-08 Fuji Photo Film Co Ltd Production of copolymer
JP4282185B2 (en) * 1999-11-02 2009-06-17 株式会社東芝 Polymer compound for photoresist and resin composition for photoresist
JP2001201856A (en) * 2000-01-21 2001-07-27 Daicel Chem Ind Ltd Resin for photoresist, its producing method and photoresist composition
JP4149148B2 (en) * 2001-08-03 2008-09-10 富士フイルム株式会社 Positive resist composition
JP4372561B2 (en) * 2003-01-07 2009-11-25 三菱レイヨン株式会社 Copolymer for resist and production method thereof, resist composition and pattern production method
JP2006003846A (en) * 2004-06-21 2006-01-05 Daito Chemix Corp Chemically amplified photoresist polymer

Also Published As

Publication number Publication date
JPWO2008081822A1 (en) 2010-04-30
JP5584980B2 (en) 2014-09-10
WO2008081822A1 (en) 2008-07-10

Similar Documents

Publication Publication Date Title
TW201114782A (en) Method for producing polymer, polymer for lithography, composition for resist and method for producing substrate
TWI304517B (en) Process for refining crude resin for resist
JP6086135B2 (en) Method for producing a copolymer for lithography
JP4006472B2 (en) Resist polymer, resist polymer production method, resist composition, and pattern-formed substrate production method
JP2008303315A (en) New vinyl ether copolymer
TWI584063B (en) Method for manufacturing copolymer for lithography
JP5620627B2 (en) RESIST POLYMER MANUFACTURING METHOD, RESIST COMPOSITION, AND SUBSTRATE MANUFACTURING METHOD
TW200836004A (en) Resist polymer, resist composition, and method of producing substrate formed with fine pattern
JP2005060638A (en) Polymer, production method, resist composition and method for forming pattern
JP2000056459A (en) Resist composition
JP5456365B2 (en) Polymer, resist composition, and method for producing substrate having fine pattern formed
JP5377042B2 (en) A method for producing a copolymer for resist.
JP4332445B2 (en) Resist polymer
JP5696868B2 (en) A method for producing a copolymer for resist.
JP5761550B2 (en) Method for evaluating a copolymer for lithography
JP2005048126A (en) Polymer, manufacturing method of polymer, resist composition and pattern forming method
JP6287552B2 (en) Resist copolymer and resist composition
JP5939009B2 (en) Method for evaluating (meth) acrylic acid ester and method for producing copolymer for lithography
TW200848925A (en) Polymer, resist composition, and method for peoducing base plate including formed patterns
JP5716943B2 (en) Polymer, resist composition, and method of manufacturing substrate on which pattern is formed
JP4390197B2 (en) Polymer, resist composition and pattern manufacturing method
JP4375785B2 (en) Resist polymer
JP5640787B2 (en) Method for producing polymer
CN104007614B (en) Resist polymer and the anti-corrosion agent composition containing the polymer
JP2022146199A (en) Copolymer, method for producing copolymer, resist composition, and method for producing substrate