WO2008081822A1 - Polymer for resist, resist composition, and method for production of substrate having fine pattern formed thereon - Google Patents

Polymer for resist, resist composition, and method for production of substrate having fine pattern formed thereon Download PDF

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Publication number
WO2008081822A1
WO2008081822A1 PCT/JP2007/074974 JP2007074974W WO2008081822A1 WO 2008081822 A1 WO2008081822 A1 WO 2008081822A1 JP 2007074974 W JP2007074974 W JP 2007074974W WO 2008081822 A1 WO2008081822 A1 WO 2008081822A1
Authority
WO
WIPO (PCT)
Prior art keywords
polymer
resist
content
hydrophilic group
lactone skeleton
Prior art date
Application number
PCT/JP2007/074974
Other languages
French (fr)
Japanese (ja)
Inventor
Atsushi Yasuda
Hikaru Momose
Original Assignee
Mitsubishi Rayon Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Rayon Co., Ltd. filed Critical Mitsubishi Rayon Co., Ltd.
Priority to JP2008524296A priority Critical patent/JP5584980B2/en
Publication of WO2008081822A1 publication Critical patent/WO2008081822A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)

Abstract

Disclosed is a polymer (P) for a resist, which has a lactone skeleton (B) or a hydrophilic group (C) and meets the requirements represented by the formula (1) or (2). P[B]/PH[B] ≤ 0.99 (1) P[C]/PH[C] ≤ 0.99 (2) wherein P[B] represents a content of the lactone skeleton in the polymer (P); PH[B] represents a content of a lactone skeleton in a polymer (PH); P[C] represents a content of the hydrophilic group in the polymer (P); PH[C] represents a content of the hydrophilic group in a polymer (PH); the polymer (PH) is a polymer fractionated from the polymer (P) by gel permeation chromatography and has a molecular weight larger than the mass average molecular weight (Mw(P)) of the polymer (P); and the content of the lactone skeleton or the hydrophilic group in a polymer is a ratio of the integrated value of a peak of the lactone skeleton or the hydrophilic group relative to the sum total of the integrated values of all peaks of the polymer as measured by NMR.
PCT/JP2007/074974 2006-12-27 2007-12-26 Polymer for resist, resist composition, and method for production of substrate having fine pattern formed thereon WO2008081822A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008524296A JP5584980B2 (en) 2006-12-27 2007-12-26 RESIST MATERIAL, RESIST COMPOSITION, METHOD FOR PRODUCING SUBSTRATE WITH FORMED FINE PATTERN, AND METHOD FOR PRODUCING RESIST POLYMER

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006-350766 2006-12-27
JP2006350766 2006-12-27
JP2007043981 2007-02-23
JP2007-043981 2007-02-23

Publications (1)

Publication Number Publication Date
WO2008081822A1 true WO2008081822A1 (en) 2008-07-10

Family

ID=39588504

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074974 WO2008081822A1 (en) 2006-12-27 2007-12-26 Polymer for resist, resist composition, and method for production of substrate having fine pattern formed thereon

Country Status (3)

Country Link
JP (1) JP5584980B2 (en)
TW (1) TW200836004A (en)
WO (1) WO2008081822A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013133250A1 (en) * 2012-03-05 2013-09-12 三菱レイヨン株式会社 Copolymer for lithography and method for manufacturing same, resist composition, and method for manufacturing substrate
US10336851B2 (en) 2013-09-03 2019-07-02 Mitsubishi Chemical Corporation Copolymer for semiconductor lithography, resist composition, and method for manufacturing substrate

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106912A (en) * 1989-09-20 1991-05-07 Daicel Chem Ind Ltd Production of thermoplastic polymer for photopolymerizable composition and photopolymerizable composition
JPH1053620A (en) * 1996-06-03 1998-02-24 Nippon Shokubai Co Ltd Thermoplastic copolymer and its production
JPH10226714A (en) * 1996-12-09 1998-08-25 Nippon Soda Co Ltd (meth)acrylic ester copolymer and its production
JPH10237113A (en) * 1996-12-26 1998-09-08 Fuji Photo Film Co Ltd Production of copolymer
JP2001131232A (en) * 1999-11-02 2001-05-15 Toshiba Corp Polymeric compound for photoresist and resin composition for photoresist
JP2001201856A (en) * 2000-01-21 2001-07-27 Daicel Chem Ind Ltd Resin for photoresist, its producing method and photoresist composition
JP2003043690A (en) * 2001-08-03 2003-02-13 Fuji Photo Film Co Ltd Positive resist composition
JP2004231950A (en) * 2003-01-07 2004-08-19 Mitsubishi Rayon Co Ltd Copolymer for resists and its preparation process, resist composition, and manufacturing method of patterns

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006003846A (en) * 2004-06-21 2006-01-05 Daito Chemix Corp Chemically amplified photoresist polymer

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106912A (en) * 1989-09-20 1991-05-07 Daicel Chem Ind Ltd Production of thermoplastic polymer for photopolymerizable composition and photopolymerizable composition
JPH1053620A (en) * 1996-06-03 1998-02-24 Nippon Shokubai Co Ltd Thermoplastic copolymer and its production
JPH10226714A (en) * 1996-12-09 1998-08-25 Nippon Soda Co Ltd (meth)acrylic ester copolymer and its production
JPH10237113A (en) * 1996-12-26 1998-09-08 Fuji Photo Film Co Ltd Production of copolymer
JP2001131232A (en) * 1999-11-02 2001-05-15 Toshiba Corp Polymeric compound for photoresist and resin composition for photoresist
JP2001201856A (en) * 2000-01-21 2001-07-27 Daicel Chem Ind Ltd Resin for photoresist, its producing method and photoresist composition
JP2003043690A (en) * 2001-08-03 2003-02-13 Fuji Photo Film Co Ltd Positive resist composition
JP2004231950A (en) * 2003-01-07 2004-08-19 Mitsubishi Rayon Co Ltd Copolymer for resists and its preparation process, resist composition, and manufacturing method of patterns

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013133250A1 (en) * 2012-03-05 2013-09-12 三菱レイヨン株式会社 Copolymer for lithography and method for manufacturing same, resist composition, and method for manufacturing substrate
CN104159937A (en) * 2012-03-05 2014-11-19 三菱丽阳株式会社 Copolymer for lithography and method for manufacturing same, resist composition, and method for manufacturing substrate
JPWO2013133250A1 (en) * 2012-03-05 2015-07-30 三菱レイヨン株式会社 Lithographic copolymer and method for producing the same, resist composition, and method for producing a substrate
CN104159937B (en) * 2012-03-05 2016-05-18 三菱丽阳株式会社 The manufacture method of copolymer and manufacture method, anti-corrosion agent composition and substrate for photoetching
US9527938B2 (en) 2012-03-05 2016-12-27 Mitsubishi Rayon Co., Ltd. Copolymer for lithography and method of manufacturing the same, resist composition, and method of manufacturing substrate
US10336851B2 (en) 2013-09-03 2019-07-02 Mitsubishi Chemical Corporation Copolymer for semiconductor lithography, resist composition, and method for manufacturing substrate

Also Published As

Publication number Publication date
TW200836004A (en) 2008-09-01
JP5584980B2 (en) 2014-09-10
JPWO2008081822A1 (en) 2010-04-30

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