TW200834658A - Substrate processing method and substrate processing system - Google Patents

Substrate processing method and substrate processing system Download PDF

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Publication number
TW200834658A
TW200834658A TW096140951A TW96140951A TW200834658A TW 200834658 A TW200834658 A TW 200834658A TW 096140951 A TW096140951 A TW 096140951A TW 96140951 A TW96140951 A TW 96140951A TW 200834658 A TW200834658 A TW 200834658A
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Taiwan
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processing
exposure
unit
substrate
block
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TW096140951A
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Chinese (zh)
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TWI355020B (en
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Yuuichi Yamamoto
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

This invention is made to be able to aim at the lowering the price of the decrease prevention of the throughput of the lithography step according to the minuteness of the device and the cost, and to attempt the improvement of the patterning tight dimension in minuteness. With etching (ET) step that makes the pattern after the lithography step and processing at least giving resist coating processing (COT), exposure processing (EXP), thermal processing (PEB) after exposing, and the lithography processing of developing processing (DEV) etc. to semiconductor wafer W and forming a predetermined pattern with the substrate processing system a mask, the etching correction of the temperature correction in the etching process in the thermal processing after measurement step that measures the stroke width of the pattern and are possessed, the exposure in the exposure processing of the lithography step since the second times is corrected based on measurement information measured by the measurement step, and it exposes it is done.

Description

200834658 九、發明說明：β 【發明所屬之技術領域】 微景;例如半導體晶圓或LCD玻璃基板等基板實施 — 里之基板處理方法及基板處理系統。 【先前技術】200834658 IX. Description of the invention: β [Technical field to which the invention pertains] Micro-view; substrate processing methods such as semiconductor wafers or LCD glass substrates, and substrate processing systems. [Prior Art]

Tin 半導體裝置時，為將ΙΤ〇(氧化銦錫，1ndium 基板:=用 2曝光圖案進行顯影處理使所期二 阻g 塗理由it顯影處理系統進行，該 布，理單兀’將光阻液塗布在基板上以處理之· 之基2ί;:=理對r塗布處理結束後之基板或‘處理後 影處ί影處理單鱗，對曝光處理後之基板供給顯影液以進行顯 推弁扠4 另丁夕数使用彳放影製程之所謂多重圖宏儿斗ΛΙ 此多重圖案化技術中， 技術 ίίΓ成細微加工之_處理，且朝進行iiii之 衣=j置輸送基板之基板輸送形態簡略化2數處 穿晋2有—裝置，將基板輸送至進行微影處理 巧或餘刻裝置，以實施微影處理或 夕^處理 獻υ。以此專利文獻1所記載之技術，可反覆^ίίίί利文 200834658 另外，已知的一基板輪送方 數處理裝置之輸送線與輪執=:鱗於輪送基板至多 輸送（參關如專利文獻&基板之其他輸顿_制，而實施 [專利文獻1]日本特7 ο 開千7_66265號公報（申請專利範圍、圖 圖4) [專利文獻2]日本特帛2眼聰9號公報（申 凊專利範圍、 【發明内容】 登里解決之謀題 然而，以前者，亦即日太牲 術，由於可反覆進行微影製程、，^可 號公報所記載之技 =此’依後者亦即日本特開2〇〇3_2826 配置，因此需在輸送線置Γ輪送線 增加發生處理量降低或成本提間傳聽板’有伴隨製程 報所=日，開平7_66265號公報及日本特開2齡_69紫八 ft化中任—者皆未言及多重随化技術，尚有關二 破化％圖案化尺寸精度之課題被留下。 關於細 ^明雜於歸事進行者，目的在於提供—基板處理 現細微化時圖案以娜現成本低廉化，並可實 200834658 —ί解tit課題，記載於巾請專利範圍1之發明係包含：微 二=亦/ τ/板處理系統對被處理基板至少實施光阻塗布處 成既光後之加熱處理及顯影處理等微影處理，以形 形成於藉由先前“所形成之圖案係 基板至少實施光阻塗布處理、曝被處理 測定裝置狀㈣構’記憶藉由該 影製程之曝祕理&次以後微 正及/或蝕刻處理時之蝕刻修正。" ’、、、处理％之溫度修 之基利如 介面部，配置於該塗布•顯裝置及加熱裝置； 部鱗光裝置之間塗布· 亡，為遮罩進确;顯=理=理基板 被處瑜 p線巧=置，該測 错由該測定裝置所測定之資訊，根據該所;憶第1 200834658 理口w，將測定部配置於送入·送出部侧則更佳(申:士， 刻裝置’且在構成糊處理部之框體上宜执ίΐ 可雜電磁波之屏蔽（申請翻細6)。 社且叹置有 依記載於申請專利範圍1、3、4 夕 理基板實施細塗布處理、㈣處 ^ ^行對被處 根據圖峨 且可 =正、曝光後之加熱處理時之溫度修:二 Λ且依記載於申請專利範圍2之發明，使9 A、，& 嫩藉由先前之微^二== 專：製 化。 配置於送入·送出部盥泠太將測疋梢侧處理部 整合於-系_，並可連^彳微影製程與姓刻製程 送入·送出部在=内進=之定讀處理基板自 之餘在構成具有乾敍刻装置 所造成之影響。°又置可侧電磁波之屏蔽，可抑制電磁波 200834658 成，因此可得如板處理方法及基板處理系統如上述 製程内申請ί利範?、53明，可將微影製程與侧 再加上上述（「)、、⑺,可連·進打微f製程與餘刻製程’因此 3廉二且猎由將測定部配置於送入·送出部側，可將僅進J 2之被處理基板自送人•送出部送人測定部内以在短時間内測 „壯i4)依記·帽專鄕圍6之發明，藉由在構成1有糾 之糊處理部之框體上設置可遮斷電磁波之屏蔽，可抑制 電磁波所造成之影響，因此再加上上述⑴〜 防止裝置中之電磁波之弊害，以維持裝置之穩定性、安全性^ 【實施方式】 复施發明之最佳形熊 以下根據添附圖示詳細説明本發明最佳實施形離。 9 200834658 圖1係顯示該光阻塗布·顯旦彡 圖2係其概略立體圖，R ^ & 理系統一例之概略俯視圖， 圖。 ^圖3係其概略前視圖，圖4係其概略後視 該光阻塗布•顯影處理系統包含·· 載體區塊S1，係用以送入送出 、 ㈣片係被處;π 顧與ΐί二顯影處理區塊S2 (以下稱處理區塊S2)，係一塗布 =縱向排列有多數個例如4個單位區塊B1〜B4; 介面區塊S3，係一介面部；及 曝光裝置S4 ; 理區娇;2有二;，與測定區塊％，配置於載體區塊S1與處 2 塊S5係—爛處理部，_於處理區塊 側疋區塊S6係-測定部’配置於載體區塊S1侧。 该載體區塊S1包含： 承載台21，可承載多數個（例如4個）載體2〇 ; 開合部22，設於自此承載台21所見前方之壁面；及 傳輸臂B，用以透過開合部22自載體2〇取出晶圓w。 且此傳輸臂B可沿水平之χ、γ方向及錯直之z方向自由移 動’且繞著鉛直軸自由旋轉、自由移動，俾使其可在與設於測定 區塊S6之傳遞平台TRS3之間傳遞晶圓w。 在載體區塊si之後方側’連接有—處理區塊S2，該處理區 塊S2透過測定區塊S6、蝕刻區塊S5而與载體區塊S1連接並由 框體70包圍其周圍。於此例中，處理區塊$2自下方側起分別包 含： 弟1單位區塊（CHM)Bl，儲存光阻液或顯影液等藥液容器類； 第2單位區塊（DEV層）B2，用以進行顯影處理及加''， 第3、第4單位區塊（COT層）B3、B4，係2段用以進行光阻 液塗布處理之塗布膜形成用單位區塊及進行清洗處理之清洗單位 200834658 區塊 又’此時亦可以塗布膜形成用單位區塊之— 區塊（COT層）B3作為形成於光阻膜下層側，用^如弟3早位 形成處理之單位區塊（BCT層）。且更亦可在第 運仃抗反射膜 層）B4之上段設置抗反射膜形成用單位區塊=區塊（COT 阻膜上層側之抗反射膜之形成處理。 Λ進仃形成在光 第1〜第4單位區塊Β1〜Β4包含： 液體處理單兀，配置於前面側，用以對晶圓w · 各種加熱單元等處理單元，配置於背面側，用二之夜，、 體處理單元所進行之處理讀處理及後處理；& 仃在该液 主臂Al·、A2，係一用以傳遞晶圓…之專用基 側之該液體處理單元與配置於背面側元 間，具體而言位於下段配置有顯影處理部， 置有先阻纽部之液财理單域加鮮元#處理單元 &配 單元以，It位區塊B1〜B4之間，該㈣處理單元0、加熱 凡與輸送機構之配置佈局相同，以形成此等單位區 ^之二亦ir此^胃配置佈局相同，意指各處理單元中承載晶圓 心或;!ΐ處理单元中係晶圓W之固持機構之旋轉炎盤中 戈力尤、早70中加熱板或冷卻板之中心相同。 、、儿T^lt1所示’該DEV層Β2中，在DEV層Β2之大致中央， :域度方向（圖中γ方向）形成有一晶圓w之輪 Μ 之水平移動區域），用以連接載體區塊S1侧 只/品塊S5與介面區塊S3。且雖未經圖示，但c〇T層B3、 # |與DEV層B2相同，在c〇T層B3、B4之大致中央，沿c〇T ▲ 之長度方向（圖中Y方向）形成有一晶圓W之輸送區 "(主臂A2之水平移動區域），用以連接載體區塊S1側之蝕 刻區塊S5與介面區塊S3。 在從該輪送區域R1 (R2)之載體區塊S1侧所見之兩側中， 月’】侧（載體區塊S1侧）朝後方侧，於右側，作為該液體處理單 11 200834658 =二：層=，731所進;=之 單:”ri=如二= 域：隔夕 並排氣，以抑制該區域内微粒之漂浮。 貧出㈣空氣 示包ί用輯行上述前處理及後處理之各種單元中，例如圖4所 曝光等，;Γ光後晶圓w進行加熱處理，被稱為 進W之水分而 + A上 隹® 又该處理容器40以構成靼成留-TT1 在各處理容器40之面對輸送區域 f f早心!〜U4， 4卜又’形成加熱單元㈣、成有晶圓送出送入口 熱時間者。 j ，係可調整加熱溫度或加 m〜u4之各處理單元、顯影單元曰曰3=之=所），例如架座單元 可沿水平之X、γ方向及錯直 t 4之間傳遞晶圓，為此’ 自由旋轉。 万向自由移動，並繞著鉛直軸 _:圖若以主臂為代表説明之， 片5卜用以支持晶，本體5〇具有2條彎曲臂 沿未經圖示之基座相互獨立自由H表區域’此等.f曲臂片51可 12 200834658 二x4向自可 产八，蕪* # 據來自係控制機構之控制部60之 轨Ϊ ΪΪ 控制器控制驅動。且為防止主臂Ai (Αί 在，、、、，兀畜熱’可以程式任意控制晶圓w之接收順序。 且该塗布膜形成用單位區塊B3、B4中任一 ：比 上f顯影處理用單位區塊B2構成相同。具體而言白一目j布g ί mm”理單元對晶圓w進行轨液之塗布 在COT層B3、B4之架座單元U1〜U4中具有： 理；Ϊ熱單7" (CLHP) ’對塗布光阻液後之晶圓w進行加熱處 性；疏水化處理單元（ADH)，μ提昇光阻液與晶圓w之密著 ^ DEV層B2構成相同。亦即藉由主臂A2之輪送區域主 祕塗轉元與加鱗元（ttHP^疏 水化處理早兀（ADH)。又，在此C0T層B3、B4，係 A2分別將晶圓W傳遞至架座單元1；5之傳遞平台TRw :、奈 元32與架座單元m〜U4之各處理單元。又，該疏水化處 (ADH)係在HMDS氛圍内進行氣體處理者，而設於 用單位區塊B3、B4中任一者皆可。 々勝办成 且鄰接處理區塊S2配置之餘刻區塊％，具有連接處理區塊 S2框體70之框體70a，在此框體70a内配置有堆疊多段，例如4 段，係乾姓刻裝置之蝕刻單元80，並配置有將晶圓w送入· 各钱刻單元80之輸送臂C與傳遞平台TRS2。此時輸送臂c在1 與處理區塊S2之架座單元U5傳遞平台TRS1之間及其與蝕刻區 塊S5内之傳遞平台TRS2之間傳遞晶圓w，沿水平之χ、'γ^向 及鉛直方向自由移動且自由旋轉。又，蝕刻單元8〇中可調整例二 13 200834658 在真空氣圍内所施加之高頻、 $ 條件以控制蝕刻速率。、"’、或現體反力等蝕刻步驟 如此構成之蝕刻區塊S5， 屏蔽，俾使乾蝕刻處理時蝕 v又置有黾磁波遮斷用 成影響。此巾二赵之電磁波研外部造 蔽板即可為任音者，而、性之金屬或合成樹脂製之遮 蔽板81以構成框^ 70a在本貫施形恶中係使用例如銘合金製之遮 如此以電磁波遮蔽板81構成 =處理時遮斷崎⑽所產生之電磁波 免= 且配置於載體區塊S1與韻刻區塊85之間之 始 $框體70b，該框體鳥連接 “ S6 ’具 體心，在此框體70b内配置有： 」虫抓塊S5之框 線覓測定裝置90，係一測定裝置； =臂D ’將晶圓W送入•送出至此線 傳遞平台TRS3。 R衣直刈’與 此時，輸送臂D在與測定區塊S6内之傳遞平 之傳遞平台TRS2之間及與線寬測定裝置9=間 =θ: Η W，可沿水平之X、γ方向独直方向自由移動且自由1 該線寬測定裝置90中具有-承載台91，如圖5所示， ^載晶圓W。承載台91構成例如X—γ平台，可沿水平方^ 向與Y方向自由移動。在承載台91上方配置有· 照射H射^92，對被7减於承載台91上之晶圓W從傾斜方向 綠叉光部93，檢測從光照射部92所照射，由晶圓w反射之先 由受光部93所檢測之光資訊可輪出至檢測部94，且檢 94可根據所取得之光資訊，測定從形成於晶圓w上之既定圖案& 14 200834658 =之反射光之光強度分布。又，在線寬測定9 心==二^£ 如，見之貝況之處理。控制部60，包含例如 纪 ίΤ^ΖΊ =一===度= 分布_之光強度 光強度分布加以對::;:匕二=，庫内之假想圖案之 假想圖案線寬為實際圖案之線寬;想圖案，推定此 及^imi 傳達至曝光裳置s4、加熱單元 及蝕刻早兀80。此蚪，曝光裝置弘 一 設定之例如綠=二^二)之 =ίί曝光焦點等曝光條件，控制曝光處理。 f)及靖元80，可根據圖案進 焦等曝辦之曝光位置、曝光量及曝光 溫度或加熱時間等1师正σ d ( peb )之加熱處理時之加熱 電壓或㈣=ίι 刻製程時所施加之高頻率、高頻 難力等_步驟條件之調整所造成之侧速^酬 且在該處理區塊S2與介面區堍 一 ^ A1 , ： U6 〇 ^ 傳遞平台TRS4 ;及 200834658 俾補it圖示），用以傳遞晶圓w並具有冷卻功能； 二層β2之主臂A1之間傳遞晶圓W。 所干，配Ϊ右與介面區塊S3鄰接之區域，如圖1及圖4 所不配置有2奴邊緣曝光裝置（WEE)。 介面面連接在有處中在f座單元U6之後方側^ ^ 用以將曰圓ίΐ4 在介面區塊S3中具有介面臂E， 處理區塊S2之DEV層B2之架座單元U6 i t ΐίΐ Π w ί介面臂E錯在於處观塊S2與曝光裝 Ϊ向及ίί ϊϋί送機構，於此例巾，其可沿水平之X、γ ，t " a Λ_λ方向自由移動並繞著鉛直軸自由旋轉，俾使1可 傳至該DEV_之傳遞平台_等^轉俾I、了 處_二:之流程圖説明關於如此構成之塗布•顯影 晶圓W自載日曰體20内預先塗布有硬遮罩之 化處理後之處理。 4水化處理早元（ADH)進行疏水 之晶=主自臂加^字經^水化處理後’被暫時儲存在架座單元U5 早”送至塗布單元％ ’在塗布單元 方) °錢輸送晶圓〜至邊緣曝光裝置（_/，' =周，光處理（s —3)後’實施加熱處理（s 由介面臂E輸送晶圓w 5日昊氺驻罟」接者猎 理（S-5)。 裝置在此進行既定之曝光處 於逆面力臂Ε將曝光處理後之晶圓W傳遞至DEV層Β2， ^曰^拉架座單元U6之傳遞平台TRS4，*黯層B2之 先ί力執^此^ TRS4上之晶圓W，在該DEV層B2中，首 先於加熱早兀（PEB)接受曝光後烘烤處理（s— ^ # 土1將其輸达至架座單元a之冷卻板（ ^ 既定溫度。接著藉由主臂A1另字晶圓w自架座單元)U6 16 200834658 送至顯影單元31，涂太 其輸送至加熱單元⑶由主臂A1將 將顯影處理後之晶圓w 巧衫處理。 TRS1，由钱刻區塊ss之輪送臂c、U5之傳遞平台 再將其輪送至韻刻區塊S5之則單元8〇ΎΚδ1上之晶圓W， 圖案為遮罩之钱刻處理（s—8)^早70 80,以貧施以顯影處理後之 將經蝕刻處理後之晶圓w， 出，輪送至㈣區塊S5之傳遞平f ，刻單元80取 臂D接收此平台TRS2晶"^ 測疋區塊S6之輸送 寬測定裝置90，測定形成t &區㈣之線 線寬鱗達至控制部6〇，記憶於‘9)。將此 ϊ出後，將其輸送絲刻區塊S5之定裝置9〇 他之晶主心接收平 理）。在此狀態中，於ί圓t(f理、）及_製程（處 1次微影處理中，在光阻PR不崩潰之Γ圍内^戶=寸=有在 夢由反覆進行ιηΙΓΪ係線丸，HM係硬遮罩。 理），製糊製程（處 實現形成於晶圓W之圖案之細· /上私入處,）之晶圓W上 次微影製程（處理）及钮刻製程（處理^ 在^第1 里(COT) (S —1〇 —預烘烤 日曰 ^^ = j理(WEE) (S—13)—加熱處理(麵）（上= 曝光後烘烤⑽）（s-16)-顯‘ 7处㈤^刻處理（町）（S—18)，藉此如圖 )所TF可在猎由1次微影處理所形成之圖 加形成圖案，以形成間距Ι/p之圖案。 巨P之間追 17 200834658 將在2次微影製程（處理）及侧製程（處理）時， 定裝置90所測定之二i訊， ⑽，藉此根據_線丄之測定‘，=^元到單元 曝光處理時之日美本办菩溫止曰 進订弟2 _人以後微影製程之 之加熱單元曝光焦點等曝光修I、曝_ 正、^刻紫程日±°^、^理時之加熱溫度或加熱時間等溫度修 之1所造成之侧速率等 ^ 先修正、溫度修正、侧修正，或 =所曝 現形成於日日⑬w上之圖案之細微化/八中之—。错此可實 2次微影製程（處理）及侧製程（處理）之 g曰狀裝置9g，以測賴案線寬並測定附 (s~19) 傳違至才工制彳60，以確認形成於晶目W之線寬飛 3曰—p、附著於晶圓w之雜質或微粒等狀態。 y 曰鬥f經ί上述第2次微影製程（處理）及侧製程（處理）之 日日0 W，猎由傳輸臂Β，回到被承載於載舻 2〇以結束處理。 剩歡戟體£塊81之原來的载體 理）形態中’雖已説明關於進行2次微影製程（處 制r (處理）之情形’但亦可進行3次以上此等微影 )、侧製程（處理）。當然，亦可進行1次微影製 私（處理）及姓刻製程（處理）。 且在士述實施形態中’雖已説明關於未形成抗反射膜之情 二是形成抗反射臈在光阻膜下侧或上側之情形，亦同樣 適用依本發明之基板處理方法（系統）。 【圖式簡單說明】 圖1係顯示適用依本發日狀基板處理系統之光阻塗布· 處理系統之一例之概略俯視圖。 、 18 200834658 圖2係該光阻塗布•顯影處理系統之概略立體圖。 圖3係该光阻塗布•顯影處理糸統之概略前視圖。 圖4係該光阻塗布•顯影處理系統之概略後視圖。 圖5係顯示本發明中之測定裝置之概略側視圖。 圖 係顯示遵照依本發明之基板處理方法所進行之& 耩序之流程圖。 ^处理 圖7 (a)、（b)係顯示第1次圖案形成之放大剖面圖 葬負示第2次圖案形成之放大剖面圖（b)。 ° a)及 【主要元件符號說明】 W〜半導體晶圓（被處理基板）（晶圓） Β1，··Β4〜單位區塊 Β1〜第1單位區塊（CHM) Β2〜第2單位區塊（DEV層） Β3、Β4〜第3、第4單位區塊（COT層） S1〜載體區塊 S2〜塗布•顯影處理區塊（處理區塊） S3〜介面區塊 S4〜曝光裝置 S5〜飯刻區塊 S6〜測定區塊 B〜傳輸臂 C、D〜輸送臂 TRS1...TRS4〜傳遞平台In the case of a Tin semiconductor device, a germanium (indium tin oxide, 1ndium substrate: = development treatment with a 2 exposure pattern is used to carry out the second-resistance g-coating method for the development processing system, and the cloth is treated with a photoresist solution. The substrate is coated on the substrate for processing; the substrate after the end of the r coating process or the film after the treatment is processed, and the substrate is supplied with the developer after the exposure process to perform the display 4 In addition, the so-called multi-patterning of the 彳 数 彳 ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ ΛΙ At the 2nd place, the Jin 2 has a device, and the substrate is transported to a lithography processing or a lingering device to perform lithography processing or eve processing. The technique described in Patent Document 1 can be repeated ^ In addition, the known conveying line and the wheel of the substrate-turning number processing device are as follows: the scale is transferred to the substrate at most (as in the patent document & substrate, other implementations are implemented) Patent Document 1] Japanese Special 7 ο Japanese Patent Publication No. 7-66265 (Patent Application Scope, FIG. 4) [Patent Document 2] Japanese Special Feature 2 Eye Congruence No. 9 (Shenzhen Patent Scope, [Summary of the Invention] The problem of Dengli's solution However, the former is also In the case of Taisho, it is possible to repeat the lithography process, and the technology described in the ^Ki Kou*=this is also the Japanese special opening 2〇〇3_2826 configuration, so it is necessary to increase the transmission line on the conveyor line. The amount of processing is reduced or the cost of the interim board is accompanied by a process report = day, Kaiping 7_66265 and Japan's special 2nd age _69 purple eight ft. - none of the multiple technology, not related to The problem of cracking % patterning dimensional accuracy is left behind. The purpose of the method is to provide a substrate that is thinner and more cost-effective, and can be used in 200834658. The invention described in Patent Application No. 1 includes: a micro-two=also/τ/plate processing system that performs at least a photoresist processing on a substrate to be processed, such as heat treatment and development processing, such as light treatment, to Formed by previous " The formed pattern-based substrate is subjected to at least a photoresist coating treatment, an exposure treatment measurement device, and a memory correction by the exposure process of the shadow process and the subsequent micro-positive and/or etching treatment. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The p-line is set to be accurate, and the measurement is performed by the measuring device. According to the above, it is better to arrange the measuring unit on the side of the feeding and sending unit according to the reference to the first 200834658. The device 'and the shield that constitutes the paste processing unit should be shielded from electromagnetic waves (application for sizing 6). The company sighs according to the patent application scope 1, 3, 4, the implementation of the fine coating process, (4) at the location of the ^ according to the map and can be = positive, after the exposure of the heat treatment temperature: Secondly, according to the invention described in the scope of application for patent 2, 9 A,, & are tendered by the previous micro ^ 2 == specialization. It is arranged in the feeding and sending part, and the processing part of the measuring head is integrated into the system _, and the lithography process and the surname process are sent and sent out at the = inward = fixed reading processing substrate Since then, it has formed the influence of the device with dry quotation. °The shielding of the side electromagnetic wave can be suppressed, and the electromagnetic wave 200834658 can be suppressed. Therefore, it can be obtained as a board processing method and a substrate processing system, such as the above-mentioned process application ί利范?, 53 Ming, the lithography process and the side can be added to the above ( "), (7), can be connected to the micro-f process and the process of the engraving process. Therefore, the measurement unit is placed on the side of the feeding and discharging unit, and the substrate to be processed which is only J 2 can be self-supplied. In the case where the person in the delivery unit sends the person to the measurement unit to measure the "Zi i4" in a short period of time, according to the invention, the electromagnetic wave is blocked on the frame of the composition processing unit. Shielding can suppress the influence of electromagnetic waves, so add the above (1)~ to prevent the electromagnetic wave in the device to maintain the stability and safety of the device. [Embodiment] The best shape of the invention is based on the attachment. The drawings illustrate in detail the preferred embodiment of the invention. 9 200834658 Fig. 1 shows the photoresist coating and display. Fig. 2 is a schematic perspective view showing an example of an R ^ & Fig. 3 is a schematic front view thereof, and Fig. 4 is a schematic rear view of the photoresist coating and development processing system including: a carrier block S1 for feeding and sending, (4) a film system; π Gu and ΐ ί The development processing block S2 (hereinafter referred to as the processing block S2) is a coating = longitudinally arranged with a plurality of, for example, four unit blocks B1 to B4; the interface block S3 is a dielectric surface; and an exposure device S4; Jiao; 2 has two;, and the measurement block %, is arranged in the carrier block S1 and the 2 block S5 system - the bad processing part, the _ in the processing block side block S6 system - the measuring part ' is arranged in the carrier block S1 side. The carrier block S1 includes: a carrying platform 21, which can carry a plurality of (for example, four) carriers 2; an opening and closing portion 22 disposed on a wall surface seen from the front of the loading platform 21; and a transfer arm B for transmitting The joint 22 takes out the wafer w from the carrier 2〇. And the transfer arm B can move freely along the horizontal χ, γ direction and the z direction of the straight line ′ and rotate freely around the vertical axis, so as to be movable between the transfer platform TRS3 and the transfer platform TRS3 provided in the measurement block S6. Transfer the wafer w. A processing block S2 is connected to the side of the carrier block si, and the processing block S2 is connected to the carrier block S1 through the measuring block S6 and the etched block S5 and surrounded by the frame 70. In this example, the processing block $2 includes: from the lower side, the first unit block (CHM) B1, the storage of the liquid medicine container such as the photoresist or the developer; the second unit block (DEV layer) B2, For performing development processing and adding, the third and fourth unit blocks (COT layer) B3 and B4 are two-stage unit blocks for forming a coating film for performing a photoresist liquid coating treatment and performing cleaning treatment. The cleaning unit 200834658 block can also be used to form the unit block for film formation - the block (COT layer) B3 as the unit block formed on the lower layer side of the photoresist film, and formed by the early processing of the ^3 BCT layer). Further, a unit block for forming an anti-reflection film = a block (the formation of an anti-reflection film on the upper side of the COT film) may be provided in the upper portion of the anti-reflection film layer B4. ~ The 4th unit block Β1 to Β4 include: a liquid processing unit, disposed on the front side, for the wafer w, various heating units, and the like, disposed on the back side, and used for the night, the body processing unit Processing and reading processing and post-processing; & 液 in the liquid main arms A1, A2, the liquid processing unit for transferring the dedicated substrate side of the wafer ... and disposed between the back side elements, specifically In the lower stage, there is a development processing unit, and a liquid processing single field plus fresh element # processing unit & unit is arranged between the first bit blocks B1 to B4, and the (four) processing unit 0, heating The configuration layout of the transport mechanism is the same, so as to form the unit area, and the stomach configuration is the same, meaning that the processing unit carries the wafer core or the holding unit of the wafer W in the processing unit. Rotary in the hot plate, in the early 70th heating plate or cooling plate In the DEV layer Β2, the DEV layer Β2 is substantially at the center of the DEV layer ,2, and the directional direction (the γ direction in the figure) forms a horizontal movement region of the rim of the wafer w). To connect the carrier block S1 side only / the block S5 and the interface block S3. Although not shown, the c〇T layers B3 and #| are the same as the DEV layer B2, and are formed substantially in the center of the c〇T layers B3 and B4 along the longitudinal direction of the c〇T ▲ (the Y direction in the drawing). The transport area of the wafer W " (horizontal moving area of the main arm A2) is used to connect the etched block S5 and the interface block S3 on the side of the carrier block S1. In the both sides seen from the side of the carrier block S1 of the wheel-feeding region R1 (R2), the side of the month (the side of the carrier block S1) faces the rear side, on the right side, as the liquid processing sheet 11 200834658 = two: Layer =, 731 is entered; = single: "ri = as two = domain: venting on the eve of the day to suppress the floating of particles in the area. Lean (four) air package ί with the above pre-processing and post-processing In the various units, for example, the exposure of FIG. 4, etc.; after the calendering, the wafer w is subjected to heat treatment, and is referred to as moisture in the W and + A upper layer and the processing container 40 to constitute the crucible to be left - TT1 in each The processing container 40 faces the conveying area ff early heart!~U4, 4b and 'forms the heating unit (4), and has the wafer to send and send the inlet hot time. j, can adjust the heating temperature or add m~u4 Unit, developing unit 曰曰3===), for example, the cradle unit can transfer the wafer between the horizontal X, γ direction and the wrong t 4 , for this reason, 'free rotation. Universal moving freely, and around Vertical axis _: If the figure is represented by the main arm, the piece 5b is used to support the crystal, and the body 5〇 has 2 curved arms along the unillustrated The pedestals are independent of each other. H-table area 'These.f-curved arm pieces 51 can be 12 200834658. The x4 is self-produced, and the 芜*# is controlled by the controller of the control unit 60 of the system control unit. In order to prevent the main arm Ai (Αί,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The unit block B2 has the same composition. Specifically, the white element is coated with the trajectory of the wafer w in the pedestal units U1 to U4 of the COT layers B3 and B4. 7" (CLHP) 'The wafer w after the photoresist is coated is heated; the hydrophobicization processing unit (ADH), the μ lift photoresist is the same as the DEV layer B2 of the wafer w. The main component of the main arm A2 is coated with a rotating element and a scale element (ttHP^hydrophobic treatment early (ADH). In addition, the C0T layer B3, B4, and A2 respectively transfer the wafer W to the rack. The processing unit TRw of the seat unit 1; 5, the processing unit of the neon 32 and the pedestal units m to U4. Further, the hydrophobization (ADH) is in the HMDS atmosphere Any one of the unit blocks B3 and B4 may be provided for the gas processing, and the remaining block % disposed adjacent to the processing block S2 has the connection processing block S2 frame 70. The casing 70a is provided with a plurality of stacked sections, for example, four sections, in the casing 70a, and is provided with an etching unit 80 for the device of the surname, and is provided with a transport arm C for transporting the wafer w into the unit 80. Platform TRS 2. At this time, the transport arm c transfers the wafer w between 1 and the transfer unit U5 of the processing block S2 and the transfer platform TRS2 in the etched block S5, along the horizontal χ, ' The γ^ direction and the vertical direction are free to move and free to rotate. Further, the etching unit 8 can be adjusted in the second example. 13 200834658 The high frequency, the condition applied in the vacuum envelope to control the etching rate. Etching step such as "', or the current body reaction. The etched block S5 thus constructed is shielded so that the dry etching process is also affected by the 黾 magnetic wave occlusion. The towel 2 Zhao electromagnetic wave research external shielding plate can be used as the speaker, and the metal or synthetic resin shielding plate 81 is used to form the frame 70 70a. The shielding is constituted by the electromagnetic wave shielding plate 81. The electromagnetic wave generated by the blocking (10) during the processing is replaced by the initial frame 30b disposed between the carrier block S1 and the engraved block 85, and the frame bird is connected to "S6". Specifically, in the casing 70b, the frame measuring device 90 of the insect catching block S5 is a measuring device; the arm D' feeds and sends the wafer W to the wire transfer platform TRS3. At the same time, the transfer arm D is between the transfer flat platform TRS2 in the measurement block S6 and the line width measuring device 9 = θ: Η W, which can be along the horizontal X, γ The direction is free to move in a straight direction and free. The line width measuring device 90 has a carrier 92, as shown in FIG. The stage 91 constitutes, for example, an X-γ platform and is freely movable in the horizontal direction and the Y direction. The irradiation H is disposed above the stage 91, and the wafer W that has been subtracted from the stage 91 from the oblique direction is detected by the light-irradiating portion 92 from the oblique-direction green-fork portion 93, and is reflected by the wafer w. The light information detected by the light receiving unit 93 can be rotated to the detecting unit 94, and the detecting 94 can measure the reflected light from the predetermined pattern & 14 200834658 formed on the wafer w based on the acquired light information. Light intensity distribution. In addition, the online width measurement 9 heart == two ^, for example, see the treatment of the shell. The control unit 60 includes, for example, a light intensity distribution of the light intensity of the Τ Τ ΖΊ 分布 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = Wide; want to pattern, presume this and ^imi to the exposure s4, heating unit and etching early 80. In this case, the exposure device is set to, for example, green = 2^2) = ίί exposure exposure and other exposure conditions, and the exposure processing is controlled. f) and Jingyuan 80, according to the pattern of the exposure position, the exposure amount and the exposure temperature or heating time, etc., the heating voltage during the heat treatment of the 1st division σ d ( peb ) or (4) = ίι engraving process The high frequency, high frequency hard force, etc. imposed by the adjustment of the step conditions caused by the side speed compensation and in the processing block S2 and the interface area 堍一 ^ A1 , : U6 〇 ^ transfer platform TRS4 ; and 200834658 It is shown) for transferring the wafer w and having a cooling function; the wafer W is transferred between the main arms A1 of the two layers β2. The dry area is matched with the area adjacent to the interface block S3, and no slave edge exposure device (WEE) is disposed as shown in FIGS. 1 and 4. The interface surface is connected in some places behind the f-seat unit U6 to form the interface arm E in the interface block S3, and the pedestal unit U6 in the DEV layer B2 of the processing block S2 is ΐ ΐ ΐ Π w ί interface arm E is wrong in the block S2 and the exposure device and the ίί ϊϋ ί, the case can be freely moved along the horizontal X, γ, t " a Λ λ direction and free around the vertical axis Rotating, 俾1 can be transmitted to the DEV_'s delivery platform _etc. Turning 俾I, _2: Flowchart Description The coated/developed wafer W is pre-coated in the self-loading 曰20 The processing after the hard mask is processed. 4 Hydration treatment early element (ADH) for hydrophobic crystal = main self-arm plus ^ word after hydration treatment 'is temporarily stored in the pedestal unit U5 early" sent to the coating unit % 'in the coating unit side) ° money Transfer the wafer ~ to the edge exposure device (_ /, ' = week, after the light treatment (s - 3) 'to perform the heat treatment (s transport the wafer by the interface arm E 5 days) S-5). The device performs the predetermined exposure in the opposite direction. The wafer W after the exposure process is transferred to the DEV layer Β2, the transfer platform TRS4 of the pull frame unit U6, and the layer B2力 执 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The cooling plate (^ is set to a temperature. Then it is sent to the developing unit 31 by the main arm A1 and the wafer w from the pedestal unit) U6 16 200834658, and the coating is sent to the heating unit (3). The main arm A1 will be processed after development. Wafer w smart shirt processing. TRS1, by the money engraved block ss wheel delivery arm c, U5 transfer platform and then it is sent to the rhyme block S5 then the unit 8 〇ΎΚ δ1 crystal Circle W, the pattern is the mask of the money engraving (s-8) ^ early 70 80, after the poor application of the development process, the etched wafer w, out, and transferred to the (four) block S5 transmission Flat f, the engraving unit 80 takes the arm D to receive the transport width measuring device 90 of the platform TRS2 crystal "^ the detecting block S6, and measures the line width of the t & area (4) to reach the control unit 6〇, and remembers '9). After this is thrown out, it will be conveyed to the wire-cut block S5, and the device will be received by the center of the wire. In this state, in the circle of t (f, ) and _ process (In the lithography process, in the case where the photoresist PR does not collapse, the household is = inch = there is a dream in the reverse by the ιηΙΓΪ line pill, HM is a hard mask.), the paste process (achieve) Wafer formed in the pattern of the wafer W / / on the private entrance, the wafer W last lithography process (processing) and button engraving process (processing ^ in ^ 1 (COT) (S - 1 〇 - Pre-baking day 曰 ^^ = j (WEE) (S-13) - heat treatment (face) (up = post-exposure bake (10)) (s-16) - display '7 (five) ^ engraved (cho) (S-18), by which the TF can be shaped by hunting with 1 lithography The pattern is added to form a pattern to form a pattern of pitch Ι/p. The giant P is chased by 17200834658. In the second lithography process (processing) and the side process (processing), the device i determines the second signal. (10), according to the measurement of _ 丄 ', = ^ yuan to the unit exposure processing, the United States, the current office, Bo Wen, 曰 订 订 订 订 2 2 以后 以后 以后 微 微 微 微 微 微 微 微 微 微 微 加热 加热Exposure _ positive, ^ engraved purple process day ± ° ^, ^ time heating temperature or heating time and other temperature repair caused by the side rate, etc. ^ first correction, temperature correction, side correction, or = exposure is formed on the day The pattern of the 13w on the day is fine/eight. In this case, the g-shaped device 9g of the lithography process (processing) and the side process (processing) can be used to determine the line width of the case and measure the attached (s~19) pass violation to the work order system 60 to confirm It is formed in a state in which the line of the crystal fiber W is wide and 3 曰-p, and adheres to impurities or particles of the wafer w. y 曰 斗 f via the second lithography process (processing) and side process (processing) on the day 0 W, hunting by the transfer arm Β, back to be carried on the load 舻 2 〇 to end the processing. In the form of the original carrier in the shape of the block 81, it is described that the lithography process (the case of r (processing) is performed twice, but the lithography can be performed more than three times), Side process (processing). Of course, it is also possible to perform a lithography process (processing) and a surname process (processing). Further, in the embodiment of the present invention, the substrate processing method (system) according to the present invention is also applied to the case where the antireflection film is not formed and the antireflection is formed on the lower side or the upper side of the photoresist film. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing an example of a photoresist coating and processing system to which a conventional substrate processing system is applied. 18 200834658 FIG. 2 is a schematic perspective view of the photoresist coating and development processing system. Fig. 3 is a schematic front view of the photoresist coating and development processing system. Figure 4 is a schematic rear view of the photoresist coating and development processing system. Fig. 5 is a schematic side view showing the measuring device of the present invention. The figure shows a flow chart of the & order performed in accordance with the substrate processing method according to the present invention. ^Processing Fig. 7 (a) and (b) show an enlarged cross-sectional view of the first pattern formation. The enlarged cross-sectional view (b) of the second pattern formation is shown. ° a) and [Main component symbol description] W~Semiconductor wafer (substrate to be processed) (wafer) Β1,··Β4~Unit block Β1~1st unit block (CHM) Β2~2nd unit block (DEV layer) Β3, Β4~3rd, 4th unit block (COT layer) S1~carrier block S2~ Coating/development processing block (processing block) S3~Interface block S4~Exposure device S5~ Engraving block S6~ measuring block B~transfer arm C, D~transport arm TRS1...TRS4~transfer platform

Al、A2〜主臂 fa、R2〜輸送區域 UL.U6〜架座單元 PEB、POST、CLHP〜加熱單元 ADH〜疏水化處理單元 19 200834658 WEE〜邊緣曝光裝置 E〜介面臂 SCR〜清洗單元 PR〜光阻 P、1/P〜間距 CD〜線寬 HM〜硬遮罩 COT〜光阻塗布處理（裝置） DEV〜顯影處理（裝置） ET〜蝕刻處理（裝置） 20〜載體 21〜承載台 22〜開合部 31〜顯影單元（處理單元） 32〜塗布單元（處理單元） 40〜處理容器 41〜晶圓送出送入口 50〜臂本體 51〜彎曲臂片 60〜控制部（控制機構） 61〜演算部 62〜記憶部 63〜解析部 70、70a、70b〜框體 80〜姓刻單元（乾触刻裝置） 81〜遮蔽板（電磁波遮蔽板） 90〜線寬測定裝置 91〜承載台 92〜光照射部 20 200834658 93〜受光部 94〜檢測部Al, A2 to main arm fa, R2 to transport area UL.U6 to pedestal unit PEB, POST, CLHP to heating unit ADH to hydrophobization processing unit 19 200834658 WEE~ edge exposure device E to interface arm SCR~ cleaning unit PR~ Photoresist P, 1/P to pitch CD ~ line width HM ~ hard mask COT ~ photoresist coating treatment (device) DEV ~ development processing (device) ET ~ etching processing (device) 20 ~ carrier 21 ~ carrier 22 ~ Opening and closing unit 31 to developing unit (processing unit) 32 to coating unit (processing unit) 40 to processing container 41 to wafer feeding and feeding inlet 50 to arm body 51 to bending arm piece 60 to control unit (control mechanism) 61 to calculation Portion 62 to memory unit 63 to analysis unit 70, 70a, 70b to frame 80 to surname unit (dry etch device) 81 to shielding plate (electromagnetic wave shielding plate) 90 to line width measuring device 91 to carrier 92 to light Irradiation unit 20 200834658 93 to light receiving unit 94 to detecting unit

Claims (1)

200834658 十、申請專利範圍： 1.一種基板處理方法，包含： 祕景> 製私，藉由基板處理系統對被處理基 每 處理、曝歧理、曝級之加熱處理 阻塗布 形成既定圖案； 久、、、“處理4微影處理，以 名虫刻製程，以該顯影處理後之圖奉氧说罢. 測定製程，用以測定顧案之^為遮罩，及 且根據於該測定製程中所測定之測定 影製程之曝光處理時之曝光修正、眠2次以後微 正及/或細製程時之侧修正。私奴加熱處理時之溫度修 2·如申。月專利範圍第1項之基板處理方法，1中 =種對被處理基板至少實施光阻塗布處理、暖光 罩1成於該顯影處理後之被處理基板上之圖案為遮 測定裝置，用以測定該圖案之線寬；及 憶i空if構，，ff細定裝置所測定之資訊，並根據該所記 ^光後uΐ次以後微影製程之曝光處理時之曝光修正、 =基之二;：之修正及域崎理時之娜正。 被處理基板之送入•送出部； g邱顯it含光阻塗布裝置、顯影裝置及加熱裝置； 顯ί塗布•顯影處理部與曝絲置之間，在塗布· m曝歧置之間貞絲之㈣； 後4S二，卜具有’刻裝置’該_裝置以形成於顯影處理 处基板上之圖案為遮罩，進行餘刻處理； 22 200834658 測定部’具有一測定裝置’該測定裝置測定形成於該 板上之随之線寬；及 控制機構，記憶藉由該測定裝置所測定之資訊，根據哕 之資訊’進行第2次以後微影製程之曝光處辦 二 且I虫 置於送入· 送出部側 6. 光後，熱處理時之溫度修正及/或姓刻處理時之姓刻=。暴 5·如申請專利範圍第4項之基板處理苴二 部與塗布•顯影處理部之間並列配定亥运入•送出 刻處理部係配置於塗布$ 拂、σ人蝕刻處理部， 部側。 ^ ”、、U處理部側，測定部係配 其中該姓刻裝置 部之框體上設置有可遮斷 十一 圖式200834658 X. Patent application scope: 1. A substrate processing method comprising: a secret view; a private processing, forming a predetermined pattern by a substrate processing system for each treatment, exposure ambiguity, and exposure processing of the treated substrate; For a long time,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The exposure correction during the exposure process of the measurement process is determined by the exposure correction, the micro-positive and/or the side correction during the fine process after 2 times of sleep. The temperature of the private slave heating treatment is as follows: 1. Shen patent range No. 1 In the substrate processing method, at least one of the substrates to be processed is subjected to a photoresist coating treatment, and the pattern of the warm mask 1 on the substrate to be processed after the development processing is a mask measuring device for measuring the line width of the pattern. And recall the information of the i-space if, ff fine-determined device, and according to the exposure after the 光 ΐ 以后 以后 以后 以后 以后 以后 微 微 微 微 微 = = = = = = = = = = = = = = Nasaki is at the time of Kasumi. Processing substrate feeding and sending part; g Qiu Xianit containing photoresist coating device, developing device and heating device; between the coating and developing treatment parts and the exposed wire, between the coating and the m exposure (4); After 4S 2, the device has a 'engraving device'. The device has a pattern formed on the substrate of the development processing device as a mask, and performs a residual process; 22 200834658 The measuring portion has a measuring device, and the measuring device is formed. The line width on the board; and the control mechanism, which memorizes the information measured by the measuring device, according to the information of the "the second time after the exposure process of the lithography process" and the I insect is placed in the feed · On the side of the sending part 6. After the light, the temperature correction during heat treatment and/or the name of the last name processing = 5. Violence 5. Between the substrate processing and the coating and development processing part of the fourth application of the patent scope The juxtaposition and delivery processing unit is disposed on the coating side of the coating $, σ human etching treatment unit. ^ ”, U processing unit side, the measuring unit is attached to the frame of the surname device unit Set to occlude eleven patterns
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