TW200910416A - Temperature setting method for heat treatment plate, computer-readable recording medium having stored program, and temperature setting device for heat treatment plate - Google Patents

Abstract

In the present invention, a heating plate is divided into a plurality of heating plate regions, and the temperature is set individually for each heating plate region. A temperature correction value that is used for adjusting the in-plane temperature of the heating plate can be set for each heating plate region of the heating plate. First, a line width within the plane of a photolithographically processed wafer is measured, and the Zernike coefficients of a Zernike polynomial that represents a plurality of in-plane tendency components are calculated based on the measured values for the line width within the plane of the wafer. Subsequently, a temperature correction value which sees the calculated Zernike coefficients approach zero is calculated for each region of the heating plate using a calculation model formulated from the correlation between the variation in the Zernike coefficients and the temperature correction value. The temperature for each region of the heating plate is then set on the basis of the calculated temperature correction values.

Description

200910416 IX. Description of the Invention: [Technical Field] The present invention relates to a method for setting a temperature of a heat treatment plate, a recording medium for a kansas, and a computer for a temperature setting device for a heat treatment plate. [Prior Art] In the photolithography process of semiconductor device manufacturing, photoresist processing is sequentially performed 'for example, a photoresist is coated on a crystal®, and light is formed; exposure,

The photoresist film is exposed to the pattern of the money; the field is exposed (p〇st exposure baking), after the exposure, the chemical reaction in the photoresist film is promoted and developed, and the exposed photoresist film is applied. Development, etc. By this wafer processing, a predetermined photoresist pattern is formed on the wafer. For example, the heat treatment such as the above-described post-exposure baking treatment is usually performed by a twisting treatment apparatus. The heat treatment apparatus is provided with a mounting crystal-addition-heat plate. A heater that dissipates heat by, for example, power supply is built in the hot plate, and the heat plate is adjusted to a predetermined temperature by heat dissipation by the heater. For example, the heat treatment temperature of the above heat treatment has a great influence on the line width of the photoresist pattern formed on the wafer. Therefore, in order to strictly control the temperature in the wafer surface during heating, the heat treatment device is The hot plate is divided into a plurality of areas, and independent heaters are built in each of the areas, and temperature adjustment is performed for each area. - It is also known that when the temperature adjustments of the respective regions of the hot plate are all performed at the same set temperature, the temperature in the wafer surface on the hot plate will be unstable due to the thermal resistance of each region (for example, thermal). As a result, the line width of the final light = pattern is unstable. Therefore, the set temperature of each region of the hot plate is subjected to temperature correction (temperature offset), and the temperature correction value of each region is set to make the wafer The temperature in the plane is uniformized (refer to Japanese Laid-Open Patent Publication No. 2001-143850). SUMMARY OF THE INVENTION The texture to be solved by the invention is set even if the rake correction value is set to uniformize the in-wafer temperature of the wafer. In contrast, the line width of the photoresist pattern is not in this state. 'The uniformity of the conventional hot plate temperature setting pattern ^ has its limitation. π sister pattern line wide cage ΐ Γ ί ί The proposed situation is resistant to 'the purpose is to carry out the second and second temperature iff' of the hot plate so that the substrate width of the photoresist pattern of the wafer is taken to be processed, and the surface of the substrate is more than the prior art. Homogenize In the invention, the heat treatment plate is first divided into a plurality of regions and the temperature is set for each region of the mother. Further, the temperature can be positively applied to each of the upper twie, and (4) light heat treatment The in-plane temperature of the board has the following four steps: Step 1 'For the substrate that has been finished with the heat treatment · ! · reverse processing, the processing state in the surface of the measuring board; Step 2, depending on the processing state in the surface The value of the ruin of the (four) gram polynomial of the t-number of the surface of the processing of the substrate is calculated; In a calculation mode, the temperature correction of each region of the heat treatment plate of the above-mentioned tube is calculated as follows: Step 4, measure, and each temperature correction value is made, and the heat is in the heat The temperature of each region. The "female excitation component" is the surface condition of the processing state of the substrate, and the invention is based on the final processing state of the substrate, and the Nike coefficient of the in-plane tilting system is calculated. Calculation mode, The temperature correction value of each region of the heat treatment plate is calculated under the singularity of 尼克=, 0, and the temperature and the correction value are corrected to correct the temperature of the hot plate in each region. Therefore, the substrate can be removed. The surface of the state is turned to 'and the processing state of the substrate is made in the substrate surface. Moreover, since the Rennick coefficient of the Nickel polynomial is adopted, the processing state in the substrate surface 200910416 can be decomposed into many in-plane inversions. Set, the face can be improved _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ a method in which the temperature of the Niney region rises by a factor of π of the in-plane tendency component. The Renault coefficient of the transition shows that the complex resistance pattern=process crosstalk process forms a light component on the substrate, and the pattern component It can be further divided into conditions; the second mode component, job and photoresist according to other points of view, the invention of your invention, Jiang 彳 进 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 域 域 域 域 域 域 域 域 域 域 域 域 域To adjust the heat treatment According to Liao; Ϊ ^ of the plate, the number of the state (iv) ^ 'count isobutyl showing the substrate processing status Γΐίί ==: Zernike polynomials amount of a Zernike coefficient. Moreover, the degree of correction is: the amount = Nick, "the amount of temperature and the temperature close to ϋ (ζ (10) of the heat treatment plate of each of the '_ the temperature of the 200910416 til zone calculated by the above temperature correction value' set the heat treatment The uniformity in the surface of the substrate is higher than that of the conventionally-added base state. [Embodiment] The preferred embodiment of the preferred shape of the bear-shaped season of the invention is described, and the first embodiment shows that the coating (four) is based on the embodiment FI. Fig. 2 is a front view of the coating and developing treatment system 1. Fig. 3 is a rear view of the coating and developing treatment system i. The structure of the coating processing has the following structure: 'Port diagram 1' is on the wafer [£ box, for example, 25 # wafer; at the second system i, send or send, or wafer w and wafer cassette, t send ώ 'view 3 In the stage of the needle, multi-stage configuration of a variety of sounds ί liquid set 'these devices are applied in a single piece of predetermined processing; interface station 4, and adjacent to the ^: processing station y set and not shown exposure device Between the wafer W and the σ Λ wafer cassette station 2 is provided with a wafer cassette mounting table 5, and is mounted thereon ί The wafer cassette 11 is freely placed in the 乂 direction (up and down direction of the figure). The wafer carrier station 2 is further provided with a wafer carrier 7 which can be moved in the transport route 6. The wafer carrier 7 Alternatively, the arrangement of the crystals w (Z direction; vertical direction) accommodated in the cassette can be freely moved, and can be selectively arranged toward the wafer W in each wafer cassette U in the meandering direction. The wafer carrier 7 can be rotated in the 0 direction of the Z axis, and can also be moved toward the temperature adjustment device 60 and the transmission device 61 2 of the third processing device group G3 on the side of the station 3 on the later side. The processing station 3 of the wafer 1 box station 2 includes, for example, five processing skirt groups gi to G5. These device groups are arranged in multiple stages with a plurality of processing devices. On the reverse side of the direction of the processing station 3 (Fig. 1) In the lower part of the middle of the wafer cassette station 2, the second processing unit group G2 is arranged. The second processing unit group G2 in the direction of the processing station 3 The third transport device is disposed, and the first transport device 10 is disposed between the third processing device and the electric power station. The JIS device group G and the third processing device in the first group GG4 Group °3, 4th; 4^«VG ίί ^ W〇, 11. 哼 between the second transporting and transporting device group G5, the second transporting device group G4, the fifth processing group = ^ 2 The processing device group G2 and the fourth processing device wafer w. The processing devices in the fG5 are selectively brought close to each other, and the transportation ί is shown in Fig. 2, and the predetermined liquid is supplied to the wafer W in the 篦ί step. f G1 ; bottom up, sequentially overlaps 20, 21, 22 in a sequence of 5, 21, 22, a liquid treatment device coated with photoresist, night to 彳, and a photoresist coating device to form a reflection preventing 臈 for W; bottom coating device 23 24, the correction of the device group G2 when processed sequentially from bottom to top. In the second processing 〜34, the developing solution is supplied to, for example, a liquid processing apparatus, and the developing processing apparatus 30 sets the group G1 and the second processing unit to perform the processing. Further, in the first processing unit 41, a liquid processing apparatus in which the chemical chamber 40 is provided at various places, and the third processing and the G2 are shown in Fig. 3 are provided. The temperature device 60; the transport device 61, performs the stacking, the 9-segment overlap: the adjustment to 64, the transfer of the high-precision cardiac display management 'South precision temperature adjustment device 62 heat treatment device 65~68, the s circle w',温度When the temperature of the wafer W is adjusted; the high temperature fourth processing device group is controlled by the heat device 7G; the position is 71 f sequence 1G segment overlap: for example, high-precision adjustment processing; rear supply baking device 75 to 79, and The wafer W after the coating process is heated by the fifth processing device group G5, and the wafer W after the processing is heat treated. After-light baking treatment device (the following is "1 ° week / dish administration 80 to 83; before the exposure of the plural, heat treatment of wafer W. device") 84 ~ 刖, after exposure 10 10104104 As shown in the port diagram 1, the ith transfer direction of the i-th transport device 10 is set to λ. As shown in Fig. 3, the bottom layer is overlapped in four steps: the ridges 90 and 91 are attached to the surface to hydrophobize the wafer w; the heating device is used to heat the wafer W. As shown in Fig. 1, in the forward direction of the second transport device u, the edge exposure 94 is placed, and (4) only the edge portion of the day/day® W is selectively exposed. ~Ping f is connected to the interface station 4 as shown in Fig.}, and is provided with a wafer carrier 1〇1, which is moved on the extension transport route 100; and a buffer wafer box 102. The wafer transport body can be rotated in the xenon direction. Further, the wafer carrier can transport the wafer w toward the opposite side of the exposure apparatus, the buffer cassette 102, and the fifth processing group G5 which are not shown. For example, a line width measuring device 11 is provided on the wafer [Pu box station 2 for measuring the line width of the crystal pattern. The line width measuring wire £11Q can obtain the image of the surface of the wafer W by, for example, taking an electron beam image to obtain the image of the surface of the wafer W, and can measure the photoresist pattern in the plane of the wafer. The line width of the complex position in the circle W plane. As shown in Fig. 4, the line width can be measured at a plurality of measurement points Q for each wafer region f 110 in which the wafer w is divided into plural numbers. The wafers w domains w, w w, corresponding to the hot plates of the hot plate 14 of the rear device 84

K1 to K5 0 1. In the coating and developing treatment system 1 configured as described above, wafer processing such as the following lithography process is performed. First, the unprocessed wafer core is taken out one by one by the wafer carrier shovel: The tempering device 6G of the group G3 is processed. Then, by the first! The transport device 1 is transported to the bottom coating device 23, and an anti-reflection film is formed. The wafer W on which the anti-reflection film has been formed is transported by the first transport, and the device 92 and the high-temperature heat treatment device 65 are temperature-adjusted with high precision: a predetermined amount is applied to each device. Then, the wafer® w is transported to the photoresist t-disc 20' to form a photoresist film on the wafer W, and then transported to the pre-baking device 7 by the second transport device 1 and then pre-baked. . Then, by the second transport 200910416 ΡΕβ«84 ^ _, two 35,: high-precision thermostat wafer w transported to the post-baking device 75 to send clothes 11, will

Shipped to a high-precision temperature device for disposal. Thereafter, the wafer W is sent to the transfer device 61 by 1() ', and the wafer ends the wafer w_crystal with the cassette u' - the wafer cooling portion 122 is cooled, and the wafer is cooled.匕3 heating ^121 'heat treatment wafer W; mode ====, on the upper side, to form a processing chamber § freely integrated. On the lower side, the lid body 130 is made high, and i is gradually discharged from the gas-changing portion 130a. The ring system is heated by the wafer W placed in the hot plate accommodating portion 131. The hot plate (10) has a twist: and a slightly = f treatment plate, carrying R2, R3, R4, R5. For example, from the plane; ^ into f such as five hot plate regions Ri' R1, bit, and circle; the plate region is arcuate and four equal parts. & R2 K5 'The area Ri is surrounded by the hot plate area (4) of the hot plate 140, and the IS heat of the heater 141 of 200910416 which is heated by the power supply is built in, and the other is "R5 ground heating. The regional temperature control device W adjusts ^ plus ^ = control (four) sets 142 adjustment. Temperature, temperature (four) Wei Ding's setting, H1 amount, the hot plate area can be set by the temperature setting as described later "temperature setting As shown in FIG. 5, the device 151 can be moved up and down on the hot plate 14 rr^ma%Bi w ^ ^ΛΤΛί f. 1 5 ^. Further, in the lower shaft 150, the heat driving plate 152' penetrates the hot plate 14 in the thickness direction; the heat 5 === shape, the through hole

As the square rises, the 升ία brother 1 liter I50 passes from the lower plate of the hot plate 140 through the through hole 152 and protrudes above the hot plate_, and can support the crystal holding portion 131 with the holding member (10) in a ring shape, and accommodates The seesaw 140 holds the outer peripheral portion of the hot plate 140; and the support ring (supp〇r; = outer circumference. When the discharge port + the mountain is formed to the upper side of the support ring 161, for example, an inert gas is emitted. The discharge port i6ia gives a V: the gas 'can purge the inside of the processing chamber s. Further, a casing 162 having a circular shape is provided on the outer side of the support ring 161, and becomes the outer circumference of the hot plate accommodating portion 131. The cooling portion 122 of the portion 121 is provided with a cooling plate 17A for mounting, for example, a wafer W, and is cooled. As shown by 51, the cooling plate m has a substantially square plate shape, and the end surface on the heating portion 121 side is Arc-shaped bending. Further, as shown in FIG. 5, a cooling member 170a such as a peltier element is built in the interior of the cold plate 170, and the cooling plate 17A can be adjusted to a predetermined set temperature. The cooling plate 170 is mounted on the road 171 extending toward the heating portion ι 21 side, and is moved on the rail 171 by the driving portion 172. Further, it is movable to the upper side of the hot plate 14A on the side of the heating portion 121. As shown in Fig. 6, two slits 173 are formed in the X direction on the cooling plate 170. The slit 173 is formed on the side of the heating portion 12 of the cooling plate 170. The end surface is in the vicinity of the central portion of the cooling plate; [7], the cooling plate 13 200910416 170 on the side of the heating portion 121 can be prevented from being protruded by the slit 173, and protruded to the heat portion 122, in the cooling portion 122, > The first lift pins 150 interfere with each other. As shown in Fig. 5, the second lift pins 74 can be provided with a second lift lock 174 below the seesaw 170. 174 is lifted from the cooling plate i7 The driving portion 175 is raised and lowered. Further, above the second lifting lock, it can support the crystal: / liter, passes through the narrow slit 173, and protrudes to the cooling plate 170 to feed and send = both sides of the frame 12G through the cooling plate 170. A wafer 180 is formed for feeding and feeding the wafer W. In the round-turn ΡΕβ device 84, first, the w round w ϋ '々 plate 170 is fed from the feed-out port 180. Then, The cooling plate 170 is moved and transferred to the top of the ί ί 140. And the first whip lock 150 is used to heat the wafer w uii, 偟, Ϊ / After a predetermined period of time, the wafer is transferred from the second to the cooling plate 170 for cooling, and then the wafer is sent from the cooling plate 170 to the outside of the PEB device 84 through the inlet and outlet 180, ending a series of For the heat treatment of the hot plate 140 of the PEB device 84, the structure of the temperature setting device 190 for performing the temperature setting thereof is described. The temperature setting device 19 includes, for example, a central processing unit (CPU, Central). A processing unit, or a general-purpose computer such as a memory, is connected to the production and manufacturing apparatus 142 of the seesaw mo as shown in FIGS. 5 and 7. As shown in FIG. 8, the temperature setting device 190 includes a portion in which the calculation unit 2 executes various programs, and an input unit 201 that inputs various pieces of information for temperature setting, for example, the data storage unit 202. Various information such as a calculation mode μ for calculating the temperature correction value is stored; the program storage unit 203 stores various programs for temperature setting; and the communication unit 204 changes the temperature setting of the hot plate 140, and The temperature control device 142 performs communication. For example, the program storage unit 203 stores a program Pi for calculating the in-plane tendency component of the complex measurement line width from the line width measurement value in the wafer surface of the photoresist pattern (Zernike). The Rennick coefficient of the polynomial. The in-plane tilt component is the in-plane tendency of the measurement line I in the plane of the wafer to be decomposed into a specific complex number 14 200910416 component. Here, the Nickel polynomial is further explained. The Nick polynomial is a complex function commonly used in the field of optics, and its unit radius is 1 (on the application surface, it is used as a real function (Real Functi〇n)), and An independent variable (arg(four)ent) (r, 0) with a polar coordinate (P〇1ar coordinate). In the field of optics, this Nickel polynomial is mainly used to resolve the aberration component of the lens, and the wavefront aberration is decomposed by using the Nickel polynomial, which is based on the wavefront of each job. For example, an image difference component of a shape such as a mountain type or a saddle type.

The planarity Γ decomposes the linewidth of many points of the crystal along the wafer inclination (in-plane tendency) into a complex in-plane tendency, an eight-direction directional offset component, an X-direction slant component, and a Y-direction direction. . The TM surface _ direction: == number (the two sides of the r table can be used to change the ZK1 of the polar coordinates) Z2(r · cos0) Z3(r · sin0) Z4(2r2-1) Z5(r2 · c〇s2 0 ) Z6 (r2 · sin2 6>) Z7((3r3 —2r) · cos9) Z8((3r3—2r) · sin(9 ) Z9(6r4~6r2+l) Z10(r3 · cos3 〇) 211(r3 · sin3 Θ ) 15 200910416 Z12((4r4 —3r2) · cos2(9) Z13((4r4 —3r2) · sin2 0) Z14((l〇r5-12r3 + 3r) · C〇S0) Z15((l〇r5-12r3 + 3r) · sin6») Z16(20r6-30r4+12r2-l) The error is calculated by using this arbitrary Nickel polynomial, such as the width measurement value to approximate the line Zn of the wafer in the plane of the wafer. For example, the complex f-factor Ζ3 of the Nickel Yuan and the internal tendency component shows the γ-direction tilt component, the oblique component, and the nick component. The b-gram coefficients Z4, Z9, and Z16 show the curved port in the data storage unit.呌 a 例如 M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M And satisfying 1 ΔΖ = Μ - ΔΤ ..·.·(1), using the J mode, the measurement from the crystal coffee The width of the Ζη, which can be calculated as the nose temperature correction value Δτ, is only removed from the in-plane tendency of the line, i 7 is equal to °, so the calculated nickname 凄η, to (-1 ), and then the value obtained as the change to the book Nikon coefficient 1; ΛΖ. & a stop s' input to #士计异模式, sequentially increase the temperature of each of the hot plate regions R1 R R5, and On the second day of the measurement, the variation in the line width in the wafer surface is measured, and the variation amount of the Rennick coefficient (the variation amount of the off-preferred component) corresponding to the line in the plane of the wafer is calculated, and the unit is equal to each other. The change of the amount of money, Nick's change, the amount of the determinant of the 16th, 200910416 elements, so that the temperature of the hot plate area rises rc when the change is in the middle and the middle: the variation of the Rennick coefficient becomes 〇, the hot plate area R, the number of rises ^^ is such that the variation of the heat plate 140 ί , the light number is sequentially arranged from the top and the same as the ground μ, ί'31 : 140 Rs ± ^ Jm ; ^ 5 Ml '5 (i R4 ± ^ 1〇CBf ; The variation of each Nick coefficient; from the second formula; =====, the existing temperature of the calculation is set to c疋/ί2 The various programs processed are recorded in the power setting device. It is also possible to install from the record ship to the temperature = the program P2, for example, the correction of the Renner coefficient obtained from the result of the line width measurement, and the optimum correction temperature Λτ. At this time, the corrected temperature ΔΤ AT=Mm · ΔΖ (2) is used to calculate the optimum corrected temperature ΔΤ from the amount of change 任N of the Renn coefficient. The setting Ϊ耆2 3 constitutes the temperature setting device (10), and the temperature setting operation thereof is explained. Figure 11 shows the flow of this temperature setting process. ^First' in the coating development processing system i,

' ‘ Widely, the line width of the measurement point Q 200910416 of the complex number in the wafer surface is measured and found to correspond to the hot plate 14()夂

WrWW line width. ..., the wafer area to the Rs wafer area next, the line width measuring device 110 t £ 190 190 190 t ^ measured value, that is, the line width in the wafer surface, 丨 = 曰 staff or Wl ~ The Rennick coefficient of the line width propensity component of Ws is substituted into the relation (1), and the calculated value of the Nike coefficient Ζη is shown in the relationship (ηχ-1 as shown in FIG. 12, and Let the optimum temperature of the hot plate area 'R5' be corrected and the type of S3). By this calculation process, 屮彳(^Tl~ΔΤ5) is calculated (step of step 11 - becomes: and the temperature correction value of the in-plane area μ of the line width is set to the money board area of 希二=^= 4〇 The various programs stored in the private storage unit 203 can be used to measure the in-plane correction value of the continuous crystal of the wafer S development processing system 1 in accordance with the above embodiment; Any Nick coefficient plate S positive value ΔΤ. Also, #(四) Temperature repair domain AT, after touching (10)

Master the 'and can be _ lion volume. m心地职 1 J:J 18 200910416 The uniformity of the line width in the round face. Especially because of the influence of the PEB device 84 on the final line width, the effect of the PEB device 84 is very high. The method of modifying the hot plate 140 of the PEB device 84 is the same as the above-mentioned "ΔT" system. The heat treatment temperature and the photoresist liquid of the temperature correction value 84 of each of the regions R1 to R5 can be processed one by one, at least by the PEB device degree or the photoresist type, #5. For heat treatment temperature Μ, and set different medium temperature treatment prescription, use different calculation mold temperature liquid different treatment prescription 加热 (heating prescription J (heating temperature Τ 2, two heating f degree Τ 1, photoresist liquid 哟, treatment曙, each of these treatments =====temperature 哎 photoresist to calculate the temperature of each hot plate region R1 R R5 repair H, Μ 4, even if the photoresist is replaced, and the replacement process _ w ° and then. In this case, the optimum temperature, the wafer = the uniformity in the plane of the wafer corresponding to the processing prescription. Therefore, the calculation mode of the embodiment in which the line width of the photoresist pattern is ensured is as follows. Divided into the resistivity component α, which is not under the photoresist type

L Other factors other than the liquid barrier. When the processing conditions other than the ΔΖ= aMt · ΔΤ ......(3) degree width ^ are changed, only H2 is changed, and the photoresist such as the starting temperature is sufficient. In this way, the photoresist 4 is further patterned into a (four)' immediate and rapid response. < Change in the degree of the shirt, etc., can play even, the pattern component runs; is as follows (4) -

Mtl, the exposure processing conditions of the photolithography process can be divided into the composition of the composition 曰 姨 姨 Μΐ , 2, exposed 19 200910416 processing conditions other than light processing conditions. ΔΖ-aMtl · Mt2 · ΛΤ ...... (4) Light processing conditions ' are conditions such as the amount of exposure (dose, amount of focus), the state of the exposure device, etc. affecting the line width; and the wide processing other than the exposure processing conditions, for example The heating time, heating temperature, and state of the heat treatment of the crucible device affect the condition of the line width. In this case, for example, in the case of exposure, the problem can be solved by changing only the mode component Mtl. Further, the preferred embodiment of the invention will be described with reference to the appended drawings, but the invention is not limited thereto. Obviously, as long as it is a person skilled in the art, various modifications can be made within the scope of the scope of the patent application, and such modifications or modifications, of course, also belong to the technique of the present invention. In the above embodiment, the hot plate 140 after the temperature setting is divided into five regions; however, the number thereof can be arbitrarily selected. Further, the shape of the divided region of the hot plate 140 can be arbitrarily selected. [Industrial Applicability] In the above embodiment, the temperature of the hot plate 140 of the crucible device 84 is set according to the line width in the plane of the wafer; however, other pre-bake or post-bake devices are performed. The present invention is also applicable to the temperature setting of the heat-treated hot plate or the temperature setting of the cooling plate by the cooling processing device for cooling the wafer W. Further, in the above embodiment, the temperature of the hot plate is set to uniformize the line width in the wafer surface; however, it may be performed in a crucible device, a prebaking device, a post-baking device, etc. 1 ^ The temperature of the heat-treated plate is set so that the processing state other than the line width in the plane of the wafer is, for example, the angle of the sidewall of the recess of the photoresist pattern (sidewall angle) or the film thickness of the photoresist pattern on the wafer In-plane homogenization. Moreover, in the above embodiment, the temperature setting of the hot plate is performed so that the pattern line width before the etching process is uniform after the photolithography process; however, the temperature setting of each heat treatment plate can also be performed so that The pattern line width or sidewall tilt angle 20 200910416 (side wall angle) is uniformized after the etching process. Further, the present invention is also applicable to the temperature setting of a processing board for heat-treating a wafer other than a wafer (a flat panel is not H) and a photo paste. When the temperature of the heat treatment plate for heat treatment is placed on the substrate, the heat treatment plate is heat-treated. [Schematic Description] A plan view of a schematic configuration of the coating/shadow processing system. Figure 2 is a front elevational view of the coating development processing system of Figure 1. Figure 3 is a rear elevational view of the coating development processing system of the ®. = shows the measurement of the line width in the plane of the wafer. Figure 5 shows the outline of the longitudinal section of the schematic structure of the device. Fig. 6 is a plan view showing the outline of the pEB device and the structure of the hot plate. ΐ qΐΐη Device junction_block diagram. The case of the complex i component is used to decompose the line width measurement value into the in-plane tendency of the calculation mode. Block diagram for temperature processing. The relationship of the calculation mode. After the correction value is substituted, Figure 13 shows the temperature correction chart for each treatment prescription. Mode and temperature correction value are set [Main component symbol description] 1~ Coating development processing system 2~ Wafer g box station 3~ Processing station 4~Interface station 200910416 5~ Wafer cassette mounting table 6~ Shipping route 7~ Wafer transport body 10 to first transport device 11 to second transport device 20, 2 to 22 to photoresist coating device (C0T) 23, 24 to bottom coat device (BARC) 30 - 34 to development processing device (DEV) 40, 41 ~ chemical room (CHM) 60 ~ temperature control device (TCP) 61 ~ transfer device (TRS) 62, 63, 64 ~ high-precision temperature control device (CPL) 65 - 68 ~ high temperature heat treatment device (BAKE 70~High-precision thermostat (CPL) 71-74~Pre-bake device (PAB) 75-79~ Post-bake device (POST) 80-83~High-precision thermostat (CPL) 84-89~Exposure Post-baking treatment device (PEB) 90, 91 to attachment device (AD) 92, 93 to heating device (HP) 94 to edge exposure device (WEE) '100 to transport route 101 to wafer carrier 102 to buffer crystal Round box 110 to line width measuring device 120 to frame 121 to heating unit 122 to cooling unit 130 to cover 22 200910416 130a to exhaust unit 131 to hot plate storage Portion 140 to hot plate 141 to heater 142 to temperature control device 150 to first lift pin 151 to lift drive device 152 to through hole 160 to holding member 161 to support ring 161a to discharge port 162 to case 170 to cooling plate 170a The cooling member 171 to the 172 to the drive unit 173 to the slit 174, the second lift pin 175, the lift drive unit 180, the feed/out port 190, the temperature setting device 200, the calculation unit 201, the input unit 202, and the data storage unit. 203 to program storage unit 204 to communication unit G1-G5 to processing device group 计算 to calculation mode PI, Ρ 2, Ρ 3 to program 200910416 Q to measurement point U to wafer cassette W to wafer

Wl~W5~ wafer area R1-R5~ hot plate area S~processing chamber △T~optimal temperature correction value

Zn~ Rennick coefficient △Z~ the variation of each nick coefficient

twenty four

Claims (1)

200910416 X. Patent application scope: 丨.—The temperature setting method of the heat treatment plate, the substrate is placed on the heat treatment plate for heat treatment; μ—the heat treatment plate is divided into a plurality of regions, and the temperature can be used in each region. Alternatively, a temperature correction value may be set in each of the regions of the heat treatment plate for adjusting the in-plane temperature of the processing plate; the temperature setting method is the following step; ^Step 1, for the substrate having completed the serial substrate processing including the heat treatment , measuring the processing state in the plane of the substrate; _ a step 2 'According to the measured value of the processing state in the surface of the substrate, calculating the Renike polynomial of the in-plane tendency component of the complex number indicating the processing state of the substrate任尼克系数; h V3′′ by calculating the Renn coefficient and the temperature correction value of the in-plane propensity component of the complex number—the calculation mode, calculating the calculated Renike coefficient, near The temperature correction value of each region of the heat treatment plate at 0, step 4' sets the temperature of the hot region by the calculated temperature correction values. u~# ], such as ^ Shen, the temperature setting method of the heat treatment plate of the first item of the patent range, wherein, the meter. The calculation mode is a one-line type, and when the temperature of each region of the heat treatment plate is increased by 1 C, the determinant of the variation amount of the in-plane tendency component of the complex number is expressed by the Rennick coefficient of the Nickel polynomial. 3. The method of setting a temperature of a heat treatment plate according to claim 1, wherein the series of substrate treatments are performed in a photolithography process to form a photoresist pattern on the substrate. 4. The method for setting a temperature of a heat treatment plate according to the third aspect of the invention, wherein the measured state of the substrate is a line width of the photoresist pattern. ^ The method for setting the temperature of the reduction plate according to the third item of the application patent No. 3, wherein the heat treatment is a heating method performed before the development process after the exposure process 25 200910416 The temperature setting method of the heat treatment plate of the third item Wherein, the temperature setting method of the heat treatment plate, wherein the composition is determined according to the exposure of the light-emitting device; the fruit composition is determined according to processing conditions other than the exposure processing conditions. Each of the temperature setting methods 'where' is a group of brains of various types of light-blocking liquids; reading a recording medium, the program is used to make the characteristics of the electricity: The temperature setting method includes the following steps; The substrate of the filament (4), step 2, calculating the Rennick coefficient of the Renike polynomial of the complex in-plane tendency component of the processing state of the substrate according to the measured value of the processing state in the surface of the substrate; 3. Calculating a calculation mode by expressing one of the correlations between the variation amount of the Rennick coefficient exhibiting the in-plane tendency component of the complex number and the temperature repair value, and calculating the calculated heat treatment plate having a Renner coefficient close to zero The temperature correction value of each zone; Step 4 'Set the temperature of each zone of the heat treatment plate by the calculated temperature correction values. • H is a temperature setting device for a heat treatment plate on which a substrate is placed for heat treatment; the heat treatment plate is divided into a plurality of regions, and temperature can be set in each region; 26 200910416 For the area, the temperature correction value can be set to heat the in-plane temperature of the board; and the substrate for which the substrate processing including one of the heat treatments has been completed is calculated according to the processing state in the substrate surface to indicate the processing state of the substrate. The Renner coefficient of the Rennick polynomial of the complex in-plane propensity component; a mode of calculation by which the correlation between the variation of the Rennick coefficient exhibiting the in-plane propensity component of the complex number and the temperature correction value is expressed, The calculated temperature correction value of each region of the heat treatment plate whose Renner coefficient is close to that of 〇 is calculated; and the temperature of each region of the heat treatment plate is set by each of the temperature correction values. 11. The temperature setting device of the heat treatment plate according to the patent application range ίο, the meter. The calculation mode is a one-line type, and when the temperature of each region of the heat treatment plate is increased by 1 c, the determinant of the variation amount of the surface tendency component of the complex number is expressed by the Rennick coefficient of the Nickel polynomial. 12. The temperature setting device of the heat treatment plate according to the first aspect of the patent application, wherein, the serial substrate processing is in the photolithography process, and the photoresist pattern is formed on the substrate. 13. The temperature setting device of the heat treatment plate according to Item 2 of the patent application, wherein the processing state of the substrate after the series of substrate treatments is the line width of the photoresist pattern. 14. The temperature setting device of the heat treatment plate of claim 12, wherein the heat treatment is performed by heating treatment before the development treatment after the exposure treatment. 15. The temperature setting device of the heat treatment plate according to Item 12 of the patent application, wherein the calculation mode can be divided into: a coefficient component determined by the photoresist solution, and a mode component determined according to other processing conditions other than the photoresist liquid. . 27 200910416, 16. If the temperature setting device of the heat treatment plate of the patent application scope 帛 ls can be entered into: f is divided into: 2nd die 20% and process Yin Yin exposure processing conditions; (10) Group of categories 一 * I. Schema: 28