200915386 九、發明說明： 【發明所屬之技術領域】 ^發日㈣’熱處理板之溫度設定方法、記錄有程式之電腦 可靖取之记錄媒體及熱處理板之溫度設定裝置。 【先前技術】 合、鱼導體裝置製造時，*人於所利用之光微影製程中依序 液塗布於例如晶圓上以形成光阻膜之光阻塗布處 ，、使光阻膜曝光為既定圖案之曝光處理、於曝光後促進光阻膜 1之化學反應之加熱處理（曝級之烘烤處理）、使已曝光之光阻 膜顯影之顯影處理等’藉由此一逑志B圓考 形成於晶圓上Γ 連串日日_理使既定之光阻圖案 署、隹^如光後之烘烤處理等加熱處理^係以加熱處理裝 於f Γ i加熱處?裝置中具有用以載置晶圓並將其加熱之熱板。 成ϋ内ΪΓ#由例如供1發熱之加熱器’藉由此加熱器所造 成之么熱，熱板被調整至既定溫度。 之光時ίί處理溫度最終會給予形成於晶圓上 内之溫i:、五：將：、：=。在此，為嚴格控制加熱時晶圓面 ;;土 致 熱板之面内溫度（日本特開細趟5〇號输L)以微调 通常設定上述溫度修正辦，首先會 線寬，再根據其測定結果由作攀員見，之曰曰®面内之 度修正値。其後再次測定晶圓 果再由作業員變更溫度修正値。反«試錯 200915386 與溫度修正値之變更作業，於作業員判斷其為適當 將溫度修正値之設定結束。 、、、 然而，在上述溫度設定過程中，需不斷嘗試錯誤 之溫度修正値才能決定該溫度修正值，因此溫度設定 ^ J時間二且於溫度設定作業途中，判斷其時點之溫度修正』二 為產生最佳線寬之最適値有其困難，需於憑作業員— 定其為適當之線寬之時點結束溫度設定作業。結果因 設定有時未舰當，*導致於晶15面内之線寬神嚴重。’皿又 【發明内容】 畳明所欲解決之譯顥 jj法課題之年段 熱處;處二 定溫度，且可針對每-該熱歧板之』域，： 疋用以5周正熱處理板之面内溫度之溫度修正值。 一 且包含以下步驟： =已結束包含職處理之—連串基板處理 基板面内之現狀之處理狀態之面内傾向= 値而====相:藉；域之溫度修正 之面内傾向·，及〃刀里相加，以什异基板處理狀態能改善 (使喃向中減去該肢善之面内傾向 十异改善後之處理狀態之面内傾向。 之多“ί:向3用==項式計算現狀之基板處理狀態 再將此多數面内傾向分量中，可藉由設定 200915386 狀態之能改善之面内$面=向勿量相加，以計算現狀之處理 去其能改善之面内傾向4狀之處理狀態之面内傾向減 此時可得知，由异时後之面内傾向。 之最適面内傾向度可能達到之最大限度改善 去相比可大幅縮短=處=之溫度’與過 進行溫度奴勒丨如餘貞之鱗麟左^敎地適當 程式驟亦可具體化為-電腦程式，該電腦 ;進仃熱處理之熱處理板之溫度設定。本發明另-離樣為，= 有如此之程式之電腦可讀取之記錄舰料μ u為’_ 處狀恶之面内傾向分解為多數面關向分量，再將此多 ，面内傾向分量中’可藉由設定該各區域之溫度修正値而獲得改 D之面内傾向分量加以相加，以計算基板之處理狀態之能改善之 面内傾向，進而從該現狀之處理狀態之面内傾向減去該能改善之 面内傾向以計算改善後之處理狀態之面内傾向。 發明之钕罢 依本發明可在短時間内設定熱處理板之溫度，因此可迅速進 行熱處理裝置之起動作業以提高裝置作動率。且可適當設定熱處 理板之溫度，因此可提昇例如基板之處理狀態之面内均一性。 【實施方式】 200915386 實施發明之最佳形熊 =下説於本發明之較佳實_§。 升姆中，具有熱處理板之溫度設定裝塗^;頁^农^= 成概略之俯視圖，圖2係塗布顯影處， 塗布顯影處理系統1之後視圖。 Μ之削視圖’圖3係 成：如® i所示’塗布顯影處理系統i具有—體連接下列者之構 至將例如25片晶圓W從外部送入送 至主^貝和處理糸統！，或將晶圓w送入送出至 處理站3 ’多段配置有多數各種處 ς只 光微影製程中之各種既定處理；及& Μ用來以早片式貫施 之間與緊鄰此處理站3而設置之未經圖示之曝光裝置 於S盒站2中設有匣盒載置台5，該 數匿盒1；沿又方向（圖ij置台5可任意使多 站2中机古研—认、口 T之上下方向）破載置為一列。於匣盒 之晶賴列方向 如内之w方向）純，選擇性地接近沿X方向排列之储 逑處=z軸〜方向旋轉’亦可接近屬於後 置61。 4 3處理裝置群G3之温度調節裝置60或傳送裝 之例有多段配置有多數處理裝置 1中之下方向於處理站3之X方向負方向（圖 G1、第2處理2侧起依序配置有第1處理裝置群 上方向）^裝於處理站3之X方向正方向⑷中之 第4處理裝置群則序配置有第3處理裝置群G3、 與第4處理5處理裝置群G5。於第3處理裝置群G3 衣置群G4之間’設有第1輸送裝置10。 200915386 =1輪送装置10 ’可選擇性地接近第1處理裝置群Γ m群G3及第4處理裝置群G4内之各處鮮^ 2幹 =以ί 5處繼群G5， .第4處理裝可選f性地接近第2處理裝置群 以輸送晶ί/群及弟5處理裝置群G5内之各處理裝置， θ ^ 2所示，於第1處理装置群G1中，從下依序番晶右$ ϊίίίίί之光阻塗布裝置2g、21、22、形成 ti； 〇f J 23 ^24 ° 供給顯影液以iir廳旦/考饰丘有5 #又液處理裝置，例如對晶圓w 理裝置群⑴及i 裝置3G〜34 π於第1處 處理裝置群Γ 处 ' 群02之最下段，分別設有用以對各 4〇、41。 之液處理裝置供給各種處理液之化學腔室 置以、在高精t!°、用以傳遞晶圓w之傳送裝 \ 調節裝置62〜6Γ及周^晶®w溫度之高精密度溫度 〜68。 及^回/夏加熱處理晶圓W之高温熱處理裝置65 例如下依序重疊有1G段各種裝置， w加熱處理之預烤裝置又71°〜即74j=、旦將^且塗布處理後之晶圓 理之後烘烤裝置75〜79。 ♦頦衫處理後之晶圓W加熱處 於第5處理裝置群G5中 圓W熱處理之多數熱處理裝置 〜83、對曝光後顯影前之晶圓^ :精在度>皿度調即裝置80 mm^E UXTS rPEB°tl ) 84 圖1所不，於第1輸送裝置方向正方向侧，配置有 200915386 ίΐΐϊίί圓:如隹圖3所示從下依序重疊有4段各種裝置，分 W之加熱裝日i 92、理之附著裝置90、91、加熱晶圓 送路於r部4中設有軸於朝x方向延伸之輪 可上下移動且亦可二，體101，與緩衝匿盒搬。晶圓輸送體101 W^l方向旋轉，可接近緊鄰介面部4之未經圖 Γ 與緩触盒搬及第5處理裝置群⑺，以輸送晶Ξ 之線。中’設有用以測定晶圓w上之光阻圖案線寬 晶圓W'上，、以取巧1線寬測定裝置110，可使例如電子束照射在 光p且曰曰圓W表面之影像，藉此能測定晶圓面内之 寬測定裝置110可測定晶圓w面内之多數位置 θίϋΐ: ΐ示’線寬測定I置11G可在多數晶圓w所分 圓ij;: :Wi〜Ws，以多數測定點q測定線寬。此晶 憶於後述peb裝置84之熱板⑽之各熱板區 微影塗布顯影處理系統1中’進行例如如下之光 理之由晶圓輸送體7從Ε盒載置台5上之⑽υ將未處 置m逐=出，輸送至第3處理裝置群G3之溫度調節裝 ΐ μ Λ >•輪送至溢度調節裝置60之晶圓w溫度至既定溫 ”輸送裝置10將其輪送至底部塗布裝置23，以形200915386 IX. Inventive description: [Technical field of invention] ^Day (4) 'The temperature setting method of the heat treatment board, the computer which recorded the program, the temperature setting device of the recording medium and the heat treatment board which can be taken. [Prior Art] When manufacturing a fish and conductor device, the liquid is applied to, for example, a wafer in a photolithography process to form a photoresist coating of the photoresist film, and the photoresist film is exposed. The exposure treatment of a predetermined pattern, the heat treatment for promoting the chemical reaction of the photoresist film 1 after exposure (the baking treatment of the exposure level), the development treatment for developing the exposed photoresist film, etc. The test is formed on the wafer. 连After the day, the heat treatment of the established photoresist system, such as the baking treatment after the light is applied to the heating device of the f Γ i heating device. A hot plate that mounts the wafer and heats it. The heat sink is adjusted to a predetermined temperature by, for example, a heater for heating 1 to be heated by the heater. The light ίί processing temperature will eventually give the temperature formed on the wafer i:, five: will:, :=. Here, in order to strictly control the wafer surface during heating; the in-plane temperature of the soil-heating plate (Japanese special opening 5 输 number L) is finely adjusted to generally set the above temperature correction, first line width, and then according to The result of the measurement is seen by the climber, and the degree of correction within the 曰曰® is corrected. After that, the wafer is measured again and the temperature correction is changed by the operator. Anti-trial and error 200915386 and temperature correction 变更 change operation, the operator judges that it is appropriate to complete the temperature correction 値 setting. However, during the above temperature setting process, it is necessary to continuously try the wrong temperature correction to determine the temperature correction value. Therefore, the temperature setting is set to 2, and during the temperature setting operation, the temperature correction at the time is determined. It is difficult to produce the optimum line width, and it is necessary to end the temperature setting operation at the time when the operator determines that it is the appropriate line width. As a result, the setting was sometimes unshipped, and the line width in the face of the crystal 15 was severe. 'Dish and [inventive content] 畳明的所的颢jj法法The year of the hot section; at the second set temperature, and can be used for each - the thermal plate of the field,: 疋 used for 5 weeks of hot plate The temperature correction value of the temperature inside the surface. The following steps are included: = The in-plane tendency of the processing state of the current processing in the surface of the substrate is processed in the case of the completion of the processing - = 値 and = = = = phase: borrowing; the in-plane tendency of the temperature correction of the domain And the addition of the sickle, the treatment state of the substrate can be improved (the in-plane tendency of the processing state after the improvement of the tendency of the limb in the face of the goodness of the body is reduced.) = Item calculation state of the substrate processing state and then this majority of the in-plane tendency component can be improved by setting the 200915386 state of the in-plane $ face = add to the amount to calculate the current situation to improve it In the in-plane tendency of the in-plane tendency of the 4-shaped treatment state, it can be known that the in-plane tendency after the different time is the best. The optimum in-plane tendency can be greatly improved compared to the maximum reduction. The temperature 'and the temperature of the slave, such as the remaining scales of the left and right, can be embodied as a computer program, the computer; the temperature setting of the heat treatment plate for heat treatment. The invention is also , = computer-readable record ship with such a program μ u is the in-plane tendency of '_ 处 恶 恶 分解 分解 多数 多数 多数 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向 倾向The components are added to calculate the in-plane tendency of the processing state of the substrate, and the in-plane tendency of the improved processing state is subtracted from the in-plane tendency of the current processing state to calculate the in-plane tendency of the improved processing state. According to the present invention, the temperature of the heat treatment plate can be set in a short time, so that the starting operation of the heat treatment device can be quickly performed to increase the device actuation rate, and the temperature of the heat treatment plate can be appropriately set, thereby improving the processing of, for example, the substrate. In the in-plane uniformity of the state. [Embodiment] 200915386 The best shape bear for implementing the invention = the preferred embodiment of the present invention is _ §. In the riser, the temperature setting of the heat treatment plate is set and coated; = a schematic top view, Figure 2 is a coating development, and a view of the coating development processing system 1. The cut view of Fig. 3 is as follows: as shown in ® i, the coating development processing system i has a body connection The following is configured to send, for example, 25 wafers W from the outside to the main unit and the processing system!, or to send the wafer w to the processing station 3 'Multiple sections are arranged in a variety of ways. Various predetermined processes in the shadowing process; and & Μ used to provide a cassette mounting table in the S box station 2 with an exposure device (not shown) disposed between the early film and the processing station 3 5, the number of boxes 1; along the direction (Figure ij set 5 can arbitrarily make the multi-station 2 machine ancient research - recognition, mouth T up and down direction) broken into a column. In the direction of the crystal column of the box The inner w direction) pure, selectively close to the storage line arranged in the X direction = z axis ~ direction rotation ' can also be close to the rear 61. 4 3 processing device group G3 temperature adjustment device 60 or transmission example In the plurality of processing apparatuses 1, the lower direction of the processing unit 1 is in the negative direction of the X direction of the processing station 3 (the direction of the first processing apparatus group is sequentially arranged from the side of the G1 and the second processing 2). The fourth processing device group G3 and the fourth processing 5 processing device group G5 are arranged in the fourth processing device group in the positive direction (4) of the X direction. . The first transport device 10 is provided between the third processing device group G3 and the clothing group G4. 200915386 =1 rounding device 10' can selectively approach the first processing device group Γ m group G3 and the fourth processing device group G4 everywhere fresh 2 2 = ί 5 at the group G5, . 4th processing The processing device is selectively responsive to the second processing device group to transport the processing devices in the crystal/group 5 and the processing device group G5, as shown by θ^2, in the first processing device group G1, from the bottom晶晶右$ ϊ ί ί 涂布 2 2 2 2 2 ; J J J J J J J J J J J J J J J J 23 23 23 J J 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 The device group (1) and the i devices 3G to 34 are placed at the lowermost portion of the group 02 at the first processing device group ,, and are provided for each of the 〇, 41, respectively. The liquid processing device supplies the chemical chambers of various processing liquids at a high precision t!°, the transfer precision of the transfer device of the wafer w, the adjustment device 62 to 6Γ, and the high precision temperature of the temperature of the wafer 68. And the high-temperature heat treatment device 65 for heat-treating the wafer W, for example, is stacked with a 1G section in sequence, and the pre-bake device of the heat treatment is again 71°~74j=, and the coating is processed. After the rounding, the baking devices 75 to 79 are used. ♦When the shirt is processed, the wafer W is heated in the fifth processing unit group G5, and the heat treatment is performed in the majority of the heat treatment apparatus ～83, and the wafer before the development after exposure is finished: the degree of precision> ^E UXTS rPEB°tl ) 84 Figure 1 is not included. On the positive side of the first conveyor, there is a 200915386 ίΐΐϊίί circle: as shown in Figure 3, there are 4 sections of various devices superimposed from the bottom, and the heating is divided into W Mounting day i 92, rational attachment device 90, 91, heating wafer feeding path in the r portion 4, the wheel extending in the x direction can be moved up and down and can also be moved to the buffer box. The wafer transport body 101 is rotated in the W1 direction to be close to the unloaded and slow-contact cassettes of the dielectric surface 4 and the fifth processing device group (7) to transport the wires of the wafer. The middle portion is provided with a line width measuring wafer W' for measuring the photoresist pattern on the wafer w, and the image measuring device 110 can be used to illuminate the image of the light p and the surface of the circle W. Thereby, the width measuring device 110 in the wafer surface can be measured to measure a plurality of positions in the wafer w plane θίϋΐ: ' 'Line width measurement I set 11G can be divided into a plurality of wafers w ij;: : Wi~Ws The line width was measured at a majority of the measurement points q. In the lithography coating and developing system 1 of each of the hot plate regions of the hot plate (10) of the peb device 84 to be described later, 'the light is processed by the wafer carrier 7 from the cassette mounting table 5, for example, as follows. The treatment m is outputted to the temperature adjustment device of the third treatment device group G3, and is transferred to the wafer w temperature of the overflow adjustment device 60 to a predetermined temperature. The delivery device 10 transfers it to the bottom. Coating device 23, shaped
依^由第1輸送裝置1G將已形成抗反射膜之晶圓W F詈7 2”、、衣置％、高溫熱處理裝置65、高精密度溫度調節 裒置70，於各裝置中實施既定之處理。 Ρ_ί後fff3 歧触塗布m於㈣〜上形成光 、猎¥1輸达裝置10將其輸送至預烤裝置Ή，以實施預 10 200915386 ΐ if著Λ由第2輸送裝置11，將晶圓w依序輪送至财狼丄壯 精密度溫度調節裝置83，於各裝 ^邊曝光裝 其後，藉由介面部4之日圓鈐逆俨1Π 中貝靶既疋之處理。 之曝光裝it G1 _ W輸送至未經圖示 PE^由輸送體101將曝光處理已結束之晶圓 將盆ί、1在實施曝光後之烘烤處理後藉由第2 y輪运至〶精密度溫度調節裝置8H置11 輸送至顯影處理裝置30，以使晶圓W上，將其 由第2輸送穿f η聛曰鬥w鈐、.，^“九阻膜顯衫。其後’藉 娃甘^裝置11將曰曰因冒輪廷至後烘烤裝置75，以實 晶圓W輸送至高精蚊溫度調轉置63以^!： $2。然韻由第i輸送裝置1G將晶圓w輸送至傳= 皿 ，曰曰圓輸送體7使其回到匣盒u，以結束係 ， 光微影製程。 H0處理之 _ ΪΪ上述腳裝置84之構成。如圖5及圖6所示， ；4 ΐ fr 框體120，其内部具有用以對晶圓w進行純 處理之加熱部121與用以對晶圓w進行冷卻處理之冷卻部122了 笔I* =斤示加熱^ 121巾具有位於上側並可任意上下動之 1 130與位於下側且可與該蓋體13G成—體以形成處 之熱板收容部131。 至b 蓋體130具有朝中心部逐漸昇高之略成圓錐狀之形離 1 了^上部設有排氣部13()a。處理腔室s内之氛圍會從排氣^ 3〇、 破均勻排出。 。於熱板收谷部丨31之中央，設有熱板140以作為用以載置晶 圓w並將其加熱之熱處理板。熱板140具有略成圓盤狀，有厚度 之形狀。 又 如圖7所示，熱板140被區隔為多數，例如5個熱板區域^、 1、馬、R4、R5。熱板140被區隔為從例如平面來看位於中心部， 成圓形之熱板區域R!，與於其周圍被4等分成圓弧狀之埶板^域 R2 〜r5 〇 -、 - 11 200915386 於熱板140之各熱板區域心〜^分別内建有藉由電力之供給 而發熱之加熱器141，可將各熱板區域艮〜;^5之每一個加熱。^ 熱板區域Ri〜&之加熱為141之發熱量可藉由例如溫度控制裝置 142調整。溫度控制裝置142可調整各加熱器141之發熱量，^將 各熱板區域Ri〜R5之溫度控制在既定之設定溫度。溫度控制裝置 142之溫度設定，可藉由例如後述溫度設定裝置19〇進行。 如圖5所示，於熱板140之下方，設有用以從下方支持晶 -W，使其昇降之第1昇降銷150。第1昇降銷150可藉由昇降^動 機構151上下動。於熱板140之中央部附近，形成有將熱板14〇 沿厚度方向貫穿之貫穿孔152。第1昇降銷150可從熱板140之下 方上昇，通過貫穿孔152而突出於熱板14〇之上方，以支持晶 W。 、曰’ 熱板收谷部131中包含用以收容熱板140並固持熱板14〇夕卜 周部之環狀固持構件160’與包圍此固持構件16〇外周且略成筒狀 之支撐環161。於支撐環161之頂面，形成有朝處理腔室^内嘴 例如非活性氣體之喷出口 161a。可藉由從此噴出口 1613喷出非活 性氣體來使處理腔室S内清淨。且於支撐環161之外方設有為埶 板收容部131外周之圓筒狀殼體162。 於緊鄰加熱部121之冷卻部122中，設有載置例如晶圓臂並 I 使其冷卻之冷卻板170。例如圖6所示，冷卻板17〇具有略成方形 之平板形狀，加熱部121側之端面呈圓弧狀彎曲。如圖5所示厂 於冷卻板之内部内建有例如帕爾帖(Peltier)元件等冷卻^件 170a，可調整冷卻板17〇至既定之設定溫度。 冷卻板170被安裝有朝加熱部121侧延伸之導軌171。藉由驅 動部172冷卻板Π0可移動於導轨171上，並可移動至加埶=卩ΐ2ι 側之熱板14〇上方。 ° 例如圖6所示，於冷卻板170有2條沿X方向形成之狹 173。狹缝173從冷卻板170之加熱部121側端面形成至冷卻板 之中央部附近。藉由此狹縫Π3，可防止移動至加熱部121側之冷 12 200915386 卻板170與突出於熱板140上之第1昇降銷150互相干擾。如圖5 所示，在冷卻部122内之冷卻板170下方，設有第2昇降銷174。 第2昇降銷174可藉由昇降驅動部175而昇降。第2昇降銷174 可從冷卻板Π0之下方上昇，通過狹縫173而突出於冷卻板170 之上方，以支持晶圓W。 如圖6所示，於包夾冷卻板170之框體120之兩侧面，形成 有用以送入送出晶圓"W之送入送出口 180。The wafer WF 詈 7 2", the clothing %, the high-temperature heat treatment device 65, and the high-precision temperature adjustment device 70 having the anti-reflection film formed by the first transport device 1G are subjected to predetermined processing in each device. Ρ _ 后 ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff ff w is sequentially sent to the wealthy wolf-precision temperature adjustment device 83, and after being mounted on each side of the device, it is processed by the Japanese yen of the face 4, and the process is processed. G1 _ W is transported to the unillustrated PE^. The wafer after the exposure process has been completed by the transport body 101 will be transported by the second y to the precision temperature adjustment after the exposure is performed. The device 8H is placed 11 to the development processing device 30 so that the wafer W is placed on the wafer W by the second transport. Thereafter, the vehicle is transferred to the high-temperature mosquito temperature transposition 63 by the wafer W to the post-baking device 75, and is transferred to the high-definition mosquito temperature transposition 63 to ^!: $2. Then, the i-th transport device 1G transports the wafer w to the transfer tray, and the round conveyance body 7 is returned to the cassette u to terminate the system and the photolithography process. H0 processing _ 构成 The above-described foot device 84 is constructed. As shown in FIGS. 5 and 6, the 4 ΐ fr frame 120 has a heating portion 121 for performing pure processing on the wafer w and a cooling portion 122 for cooling the wafer w. * = kg indicates that the heating 121 has a hot plate receiving portion 131 which is located on the upper side and can be arbitrarily moved up and down and is located at the lower side and can be formed integrally with the cover 13G. The cover body 130 has a slightly conical shape which gradually rises toward the center portion. The upper portion is provided with an exhaust portion 13()a. The atmosphere in the processing chamber s is uniformly discharged from the exhaust gas. . In the center of the hot plate receiving portion 31, a hot plate 140 is provided as a heat treatment plate for mounting the crystal w and heating it. The hot plate 140 has a substantially disk shape and a thickness. As also shown in Fig. 7, the hot plate 140 is divided into a plurality of sections, for example, five hot plate regions ^, 1, horses, R4, and R5. The hot plate 140 is partitioned into a circular hot plate region R! from a central portion, for example, in plan view, and is divided into four arc-shaped ridge plates R2 to r5 〇-, - 11 200915386 Each of the hot plate regions of the hot plate 140 is internally provided with a heater 141 which generates heat by the supply of electric power, and each of the hot plate regions 艮~^5 can be heated. The heat generated by the heating of the hot plate region Ri~& 141 can be adjusted by, for example, the temperature control device 142. The temperature control device 142 can adjust the amount of heat generated by each heater 141 to control the temperature of each of the hot plate regions Ri to R5 to a predetermined set temperature. The temperature setting of the temperature control device 142 can be performed by, for example, a temperature setting device 19 described later. As shown in Fig. 5, below the hot plate 140, a first lift pin 150 for supporting the crystal -W from below is provided. The first lift pin 150 can be moved up and down by the lift mechanism 151. A through hole 152 penetrating the hot plate 14A in the thickness direction is formed in the vicinity of the central portion of the hot plate 140. The first lift pin 150 can be raised from below the hot plate 140 and protrudes above the heat plate 14 through the through hole 152 to support the crystal W. The hot plate receiving portion 131 includes an annular holding member 160' for accommodating the hot plate 140 and holding the hot plate 14 and a peripheral support member, and a cylindrical support ring surrounding the outer periphery of the holding member 16 161. On the top surface of the support ring 161, a discharge port 161a facing the inside of the processing chamber, for example, an inert gas, is formed. The inside of the processing chamber S can be cleaned by discharging the inert gas from the discharge port 1613. Further, a cylindrical casing 162 which is an outer periphery of the slab receiving portion 131 is provided outside the support ring 161. A cooling plate 170 on which the wafer arm is placed and cooled is placed in the cooling portion 122 adjacent to the heating portion 121. For example, as shown in Fig. 6, the cooling plate 17A has a substantially square plate shape, and the end surface on the heating portion 121 side is curved in an arc shape. As shown in Fig. 5, a cooling member 170a such as a Peltier element is built in the interior of the cooling plate, and the cooling plate 17 can be adjusted to a predetermined set temperature. The cooling plate 170 is attached with a guide rail 171 that extends toward the heating portion 121 side. The cooling plate Π0 is moved by the driving portion 172 on the guide rail 171, and can be moved to the upper side of the hot plate 14A on the side of the twisting = 卩ΐ2ι. For example, as shown in Fig. 6, the cooling plate 170 has two slits 173 formed in the X direction. The slit 173 is formed from the end surface of the cooling plate 170 on the side of the heating portion 121 to the vicinity of the central portion of the cooling plate. By the slit Π3, the cold movement to the heating portion 121 side can be prevented. 12 200915386 The plate 170 and the first lift pins 150 protruding from the hot plate 140 interfere with each other. As shown in FIG. 5, a second lift pin 174 is provided below the cooling plate 170 in the cooling unit 122. The second lift pins 174 can be raised and lowered by the lift drive unit 175. The second lift pins 174 can be raised from below the cooling plate Π0 and protrude above the cooling plate 170 through the slits 173 to support the wafer W. As shown in Fig. 6, on both sides of the frame body 120 of the collet cooling plate 170, a feed-in/out port 180 for feeding and feeding the wafer "W is formed.
如以上所構成之PEB裝置84中，首先將晶圓w從送入送出 口 180送入其中並載置於冷卻板170上。接著移動冷卻板170以 使晶圓W移動至熱板140之上方。藉由第1昇降銷15〇將晶圓w 載置於熱板140上，以加熱晶圓w。然後於經過既定時間後，再 將晶圓W從熱板14〇傳遞至冷卻板17〇以使其冷卻，通過送入送 出口 180將其從該冷卻板17〇送出至pEB裝置以之外部以結束一 連串熱處理。 1 ^其次説明關於用以進行上述PEB裝置84中，設定熱板140 度之溫度设疋裝置190構成。例如溫度設定裝置 190係由具有 二/ PU或5己憶體等的通用電腦所構成，例如圖5及圖7所示， 連接有熱板140之溫度控制裝置142。 例=圖8所示，溫度設定裝置1%包含： 演异部200，執行各種程式； 上輸入用以進行例如溫度設定之各種資訊； f2，儲存用以進行溫度設定之各種資訊； ί，/諸存用以進行溫度設定之各種程式； 142通，為變更熱板140之溫度設定而與溫度控制裝置 案之晶圓面二中：，憶有—程式ρι ’從例如光阻圖 分解以表現之多數面_^^=此測定線寬之關傾向加以 分量Zn U係！以上之整刀::如’ 9所示，此多數面内傾向 <埜數）係使用澤爾尼克（Zemike)多項式 13 200915386 將晶，面内之測定職之面關向z分料多數 常被克;項ί加以說明。澤爾尼克多ίίί經 吊被使用在先學領域中之半徑為丨之單位 上被作為實數函數制），具有極絲 == 克多項式於光學領域中，主要絲㈣此澤爾尼 用，藉由使用澤爾尼克多項式將波面像itfii差使 於分^^波面’例如山型、鞍型等形狀之像差分量 面上之高度方向，並將現於晶圓 为！ Ζη。各面内傾向分量&之大^弓^里專^ =内傾向 具體而言，表現各面内八旦7由，尼克係數表現。 座標之自變數⑽）由以下之澤爾尼克係數可使用極 22 ( r · cos θ ) Z3 ( r · sin <9 ) 24 (2r2-l) 25 (r2 · cos2^ ) Z6 (r2 · sin2 0 ) 27 ((3r3—2r) -cos61) 28 ((3r3-2r) -sin^) Z9 (6r4 —6r2+ 1 ) 210 (r3 · cos3 0 )In the PEB device 84 constructed as above, the wafer w is first fed into the feed port 180 and placed on the cooling plate 170. The cooling plate 170 is then moved to move the wafer W above the hot plate 140. The wafer w is placed on the hot plate 140 by the first lift pins 15A to heat the wafer w. Then, after a predetermined period of time, the wafer W is transferred from the hot plate 14 to the cooling plate 17A to be cooled, and sent out from the cooling plate 17 to the pEB device through the feeding port 180. End a series of heat treatments. 1 Next, a description will be given of a configuration of a temperature setting device 190 for setting a hot plate 140 degrees in the above-described PEB device 84. For example, the temperature setting device 190 is constituted by a general-purpose computer having two/PU or five memory, and the temperature control device 142 to which the hot plate 140 is connected, as shown in Figs. 5 and 7, for example. Example = As shown in Fig. 8, the temperature setting device 1% includes: a different part 200, executing various programs; inputting various information for performing, for example, temperature setting; f2, storing various information for performing temperature setting; ί, / Storing various programs for temperature setting; 142 pass, for changing the temperature setting of the hot plate 140 and the wafer surface of the temperature control device case: , recalling the program ρι 'decomposed from, for example, the photoresist pattern to represent Most of the _^^= this measurement line width is inclined to the component Zn U system! The whole knife above:: As shown in '9, most of the in-plane tendency < wild number) is to use Zermike polynomial 13 200915386 to crystallize the surface of the measurement. Acquired; item ί to explain. Zernikedo ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί By using the Zernike polynomial, the wavefront image is like the itfii difference, and the height direction of the image surface of the shape such as the mountain type, the saddle shape, etc., is formed on the wafer surface! Ζη. The intrinsic tendency component & the large ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ The self-variable of the coordinates (10) can be used by the following Zernike coefficients. The pole 22 ( r · cos θ ) Z3 ( r · sin < 9 ) 24 (2r2-l) 25 (r2 · cos2^ ) Z6 (r2 · sin2 0 ) 27 ((3r3—2r) -cos61) 28 ((3r3-2r) -sin^) Z9 (6r4 —6r2+ 1 ) 210 (r3 · cos3 0 )
Zll (r3 · sin3 Θ ) Z12 ((4r4-3r2) -cos2 0) Z13 ((4r4-3r2) -sin2 0) Ζ14((1〇^12γ3 + 3〇 ic〇s^ 14 200915386 Z15 ((10r5—12r3 + 3r) · sinS Z16 (20r6-30r4+12r2-l) 於本實施形態中，澤爾尼克係數Z1係_ -曰门 均値（Z方祕移分量），澤_尼克鍵之線寬平 量，澤爾尼克係數Z3係顯示γ方向之傾斜方向傾斜分 Z4、Z9、Z16係顯示彎曲分量。 ’、刀里’澤爾尼克係數 如圖8所示，於資料儲存部202中儲存 〜 板區域溫麟雜崎得改# =例如熱 =二:定二τ量-z，二 ^面内傾向分量相加’以計算敎線寬中之能改盖 2二 各&種5”實現由溫度設定裝置19()所進行之溫^設定步二 各種权式’亦可記錄於電腦可讀取之例如CD、驟之 =_中，亦可駿此_體__度== 用以2°3中儲存有-程式p3，其係 〜以計===向”減去能改善之面内傾向 係式有—程式料，其雜例如以下關 之邮修正值ΐϊ 之面内傾向Za之各面内傾向分量成為零 ΔΖ Μ · ΛΤ · · · (1) 内傾Si 2)之巧模，係顯示例如晶圓_線寬之各面 之，交動1 (各澤爾尼克係數之變化量）ΔΖ與溫度 200915386 ί，細12所示，計算 量數〉5观（熱板區域數;5之ΐίΐ而表現之n (面内傾向分 内量，然後計算對應此等面 _旦、二澤爾尼克係數之變動量（面内傾向分量之 為矩;式之 i °又’即舰_域之 素為^零)其澤爾尼克係數之變動量為g (零），因輯應其之要 而表(可2,其兩邊乘上計算模式M之反矩陣β ΔΤ=Μ'1 . ΔΖ . . .(2) 將改善之面内傾向以之各面内傾向分量成為〇(零），可 ::改善之面内傾向為之各面内傾向分量乘以-1者盥將此3 g此改4之面内傾向分量視為零者輪人至面内傾向之變化量△ 其次説明關於由如以上所構成之溫度設定裝置190 溫度設定步驟。圖13係顯示該溫度設定步驟之流程。 仃之 Θ首先作為前準備，確定能改善之面内傾向^之各 置。此確定係藉由分別使例如熱板140之熱板區域Ri〜之、田二Zll (r3 · sin3 Θ ) Z12 ((4r4-3r2) -cos2 0) Z13 ((4r4-3r2) -sin2 0) Ζ14((1〇^12γ3 + 3〇ic〇s^ 14 200915386 Z15 ((10r5— 12r3 + 3r) · sinS Z16 (20r6-30r4+12r2-l) In the present embodiment, the Zernike coefficient Z1 system _ - 曰 値 値 値 (Z square secret component), Ze _ Nick key line width The Zernike coefficient Z3 shows that the tilt direction of the γ direction is divided by the Z4, Z9, and Z16 lines, and the bending component is displayed. The 'Zero' coefficient of the 'knife' is stored in the data storage unit 202 as shown in FIG. The area Wenlin Misakis changed #=如热=二:定二τ量-z, 二^in-plane tendency component addition' to calculate the 敎 line width of the ability to change the cover 2 2 each & species 5" realized by The temperature setting device 19() performs the temperature setting step 2, and the various weights ' can also be recorded in the computer readable CD, the sudden = _, or the _ body __ degree == for 2 In °3, there is a program p3, which is a subtraction of the in-plane tendency that can be improved, and a miscellaneous, for example, the following postal correction value ΐϊ The in-plane tendency component becomes zero ΔΖ Λ · Λ · · · (1) Inverted Si 2) is a model that shows, for example, the wafer _ line width, the interaction 1 (the variation of each Zernike coefficient) ΔΖ and the temperature 200915386 ί, 12 Shows that the number of calculations is >5 (the number of hot plate areas; 5 is the value of ΐ ΐ ΐ ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The component is the moment; the i ° and the 'snowship _ domain element is ^ zero), the variation of the Zernike coefficient is g (zero), because the series should be the same (can be 2, the two sides multiplied The inverse matrix of the upper calculation mode M Δ Τ = Μ '1 . Δ Ζ . . . (2) The in-plane tendency of the improvement is 〇 (zero), and the in-plane tendency of the improvement is: The in-plane tendency component is multiplied by -1, and the in-plane tendency component of the change of 3 is regarded as the amount of change in the in-plane tendency of the zero-turner. Next, the temperature setting means 190 constituted as above will be described. Temperature setting step. Fig. 13 shows the flow of the temperature setting step. 仃之Θ first prepares for improvement, and determines the in-plane tendency of improvement. For example, a hot plate respectively of the hot plate 140 of area Ri~, Tin
$二測定此各情形下線寬之面内傾向者。然後使用 G 多項式分解其各情形下之測定面内傾向，將因熱板區域r〜^ 變動而變動之面内傾向分量視為能改善之面内傾向分量。! ^ 改善之面内傾向分量之澤爾尼克係數編號資訊I异 存部202。 m i先義於資料儲 其次於塗布顯影處理系統1中，將已結束一連串光微 之晶圓W輸送至線寬測定裝置110,以測定晶圓w上之光 16 200915386 ，Hf之製程s 1)。此時測定晶圓面内之多數測定m；。合 二；應熱板⑽之各熱板區域㈣ 度之，=果輪出至溫 式，求算面内傾向Z'經分解之多數面内=八3澤爾尼克多項$2 measures the in-plane tendency of the line width in each case. Then, the G-polynomial is used to decompose the measurement in-plane tendency in each case, and the in-plane tendency component that fluctuates due to the fluctuation of the hot plate region r~^ is regarded as an in-plane tendency component that can be improved. ! ^ Zernike coefficient number information I of the improved in-plane tendency component. The mi pre-sense is stored in the coating development processing system 1 and the end of the series of photo-wafers W is sent to the line width measuring device 110 to measure the light on the wafer w. 200915386, Hf process s 1) . At this time, a majority of measurements m in the wafer surface were measured. Combined with the hot plate (10) of each hot plate area (four) degree, = fruit wheel out to the warm type, to calculate the in-plane tendency Z' decomposed in most of the face = eight 3 Zernike multiple
，Z；^；J 從多麵分量a 定線ί:能改善之面内傾向如此可計算測 去能改i之=:斤寬測定値之面内傾向Z中減 向Zf (圖13之步:二)(。使用減法〕，以計算改善後之最適面内傾 之情設定溫度修正 :傾向分量Zai乘以-,者代入關二之， 善之面内傾向分量則代入〇 (零）。 4 關於不此改,Z;^;J From the multi-face component a Alignment ί: The in-plane tendency that can be improved so that the calculated can be changed to i =: the width of the metric is measured in the in-plane tendency Z is reduced to Zf (step of Figure 13) : 2) (. Use subtraction), calculate the temperature correction after the improvement of the optimum inversion. The tendency component Zai is multiplied by -, and the substitution is entered into the second, and the propensity component of the good face is substituted into 〇 (zero). About not changing this
Zai 其後將各溫度修正値△'〜△丁夕次M 溫度控制裝置142，變更溫度控制通訊部204輪出至 ，之溫度修正值，並:5= ⑽之程例如溫度設定裝置 定结果計算多數面内傾向分量Zn，將 17 200915386 月匕改善之面内傾向分量相加， 面内傾向Za。然後藉由從現狀之:寬面内恶中能改善之 之面y頃向Za (使用減法），計算改善後之c能改善 猎此過程可得知，藉由設定各熱板 f向Zf。 △ 丁所可能達到之最大限产改盖二 -1尺5之溫度修正值 為目標設定熱板140之、、田产，:面内傾向Zf’因此可以此 時間。且吾人卿設定所需之 熟練度等影響，使碉整徭之缋如 匕可不叉例如作業員之 致。 i 周正後之線i之面内傾向以一定之狀態趨於— 善之算出之能改 修正後可师泊斤Λ 又疋熱板140之溫度，因此於溫度 能二並説明關於本發明之適當之實施形Zai then corrects each temperature 値 △ ' △ △ 夕 次 M temperature control device 142, changes the temperature control communication unit 204 to the temperature correction value, and: 5 = (10), for example, the temperature setting device determines the result calculation In most of the in-plane tendency component Zn, the in-plane propensity component of the improvement of 17200915386 is added, and the in-plane tendency is Za. Then, from the current situation: the surface of the wide surface can be improved to Za (using subtraction), and the improved c can be improved. This process can be known by setting each hot plate f to Zf. △ Ding can reach the maximum limit of production change to the temperature of the second -1 ft 5 correction target for the target hot plate 140, the field, the in-plane tendency Zf' can therefore be this time. Moreover, my husband sets the required proficiency and other influences, so that the 碉 碉 。 匕 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 i The tendency of the line i after the week is tended to be in a certain state - the calculation of the good can be changed to the temperature of the hot plate 140, so the temperature can be used to explain the appropriateness of the invention. Implementation form
能在記ΐ於中請專利範圍之思想範嘴内想到各種變3或 疋修正例’而關於轉者#然亦屬於本發明之技術性範圍更L 5 J二於態中雖係將已設定溫度之熱板140分割為 區m 選擇者。且亦可任意選擇熱板140之分割 於上述實施形態中雖已示以根據晶圓面内之線寬設定PEB裝 之例’但本發明亦可適用於設定位於預烤裝 置或/'烤裝置專中，進行其他熱處理之熱板溫度或設定用以冷 卻晶圓W之冷卻處理裝置之冷卻板溫度之情形。 —且於"1上之實施形態中雖以使晶圓面内之線寬均勻之方式設 疋,’、、板之/m度彳-亦可為使晶圓面内之線寬以外之其他處理狀 18 200915386 ί 光阻圖案之溝槽侧壁角度（side wal1姐你）或光阻圖案 裝置之方式設定。eb裝置、預烤裝置、後供烤 蝕刻?二谢，係進行於光微影製程後’以使 S案線見均勻之方式設定熱板之溫度，但亦可為使 溫^二彳^案線寬或侧壁角度均勻之方式設定各熱處理板之 S哭、二明亦可適用於用以針對晶圓以外之例如FPD (平面 溫度^:定Γ $之初縮遮罩等其他基板進行熱處理之熱處理板之 時有^發懈設定肋載置基板並將其鱗理之減理板之溫度 【圖式簡單說明】 ^ ? 不塗布顯影處理系統成概略之俯視圖。 ^糸圖1之塗布顯影處理系統前視圖。 S 41之塗布顯影處理系統後視圖。 圖jfr晶圓面内線寬浙點之說明圖。 ^ 裝置構成概略之縱剖面説明圖。 ;PEB裝置構成概略之横剖面説明圖。 圖8传L、:PEB裝置熱板構成之俯視圖。 = 設絲置構成之方塊圖。 面内傾向分解為多數面_向分量=定而得知之線寬 ® 10係顯示將能改善之面喃 θ。 内傾向之内容説明圖。 刀里相加以計算能改善之面 以計算改善^:巾姑缺叙面内傾向 ，係顯示計算模式之一例之矩 圖13係顯示溫度設定步驟之流程圖二。 19 200915386 圖14係已代入各面内傾向之調整量與溫度修正値之計算模式 之關係式。 【主要元件符號說明】 (1)、（2)關係式 (r, 6* )自變數 C匣盒 G1第1處理裝置群 ' G2第2處理裝置群 f G3第3處理裝置群 1 G4第4處理裝置群 G5第5處理裝置群 I澤爾尼克係數編號資訊 Μ計算模式 Μ一1反矩陣 Mi；j矩陣式之各要素 P1〜P4程式 Q測定點 Ri〜R5 熱板區域 t S處理腔室 ' U匣盒 - W晶圓 λ\^〜ν/5晶圓區域 Ζ測定線寬之面内傾向 Ζ1〜Ζ16澤爾尼克係數 Za能改善之面内傾向 2^能改善之面内傾向分量 Zf改善後之面内傾向 Zn面内傾向分量 20 200915386 △ Τ、ΔΤ广ΔΤ5 溫度修正值 △ Ζ面内傾向之變化量 1塗布顯影處理系統 2匣盒站 3處理站 4介面部 5匣盒載置台 6、 100輸送路 7、 101晶圓輸送體 f 10第1輸送裝置 f 11第2輸送裝置 20、21、22光阻塗布裝置 23、24底部塗布裝置 30〜34 顯影處理裝置 40、41化學腔室 60溫度調節裝置 61傳送裝置 62〜64、70、80〜83高精密度温度調節裝置 65〜68高溫熱處理裝置 、 71〜74預烤裝置 75〜79後烘烤裝置 84〜89曝光後之烘烤處理裝置（PEB裝置） 90、91附著裝置 92、93加熱裝置 94周邊曝光裝置 102缓衝匣盒 110線寬測定裝置 120框體 121加熱部 21 200915386 122冷卻部 130蓋體 130a排氣部 131熱板收容部 140熱板 141加熱器 142溫度控制裝置 150第1昇降銷 151昇降驅動機構 152貫穿孔 160固持構件 161支撐環 161a喷出口 162殼體 170冷卻板 170a冷卻構件 171導軌 172驅動部 173狹缝 174第2昇降銷 175昇降驅動部 180送入送出口 190溫度設定裝置 190溫度設定裝置 200演算部 201輸入部 202資料儲存部 203程式儲存部 204通訊部 22It is possible to think of various variants 3 or 疋 corrections in the thoughts of the scope of the patents in the middle of the patent, and it is also within the technical scope of the present invention that the transferor # is also in the state of the invention. The temperature hot plate 140 is divided into zone m selectors. Further, the division of the hot plate 140 may be arbitrarily selected. In the above embodiment, the example in which the PEB is set according to the line width in the wafer surface is shown. However, the present invention is also applicable to setting the pre-bake device or the 'bake device. In particular, the temperature of the hot plate for other heat treatments or the temperature of the cooling plate used to cool the cooling device of the wafer W. - In the embodiment of "1", the line width in the plane of the wafer is set to be uniform, and the /m degree 板 of the plate may be other than the line width in the plane of the wafer. Other treatments 18 200915386 ί The pattern of the groove sidewall angle of the photoresist pattern (side wal1) or the photoresist pattern device. Eb device, pre-bake device, post-bake etching? Thank you, after the photolithography process, the temperature of the hot plate is set in such a way that the S case line is uniform, but it can also be used to make the temperature ^^^^ The line width or the side wall angle is evenly set. The S crying and the second clearing of each heat treatment plate can also be applied to heat treatment for other substrates such as FPD (planar temperature ^: initial shrink mask) other than the wafer. When the heat treatment plate is used, the temperature of the rib-mounted substrate is set and the temperature of the slab is reduced. [Illustration of the drawing] ^ ? The coating processing system is not coated into a schematic plan view. Front view of the processing system. Rear view of the coating development processing system of S 41. Illustration of the in-plane line width of the jfr wafer. ^ Description of the longitudinal section of the device structure. The schematic diagram of the cross section of the PEB device. 8 pass L,: Top view of the hot plate of the PEB device. = Block diagram of the wire arrangement. The in-plane tendency is decomposed into a plurality of faces _ the component = the linear width of the component is defined by the 10 series. The content description of the internal tendency. Calculate the improvement surface to calculate the improvement ^: The lack of the in-plane tendency of the towel, showing the moment of one of the calculation modes. Figure 13 shows the flow chart of the temperature setting step. 19 200915386 Figure 14 is the tendency to be substituted into each face. Relationship between adjustment amount and calculation mode of temperature correction 【 [Explanation of main component symbols] (1), (2) Relational expression (r, 6*) Self-variable C匣 box G1 1st processing device group 'G2 2nd processing Device group f G3 third processing device group 1 G4 fourth processing device group G5 fifth processing device group I Zernike coefficient number information Μ calculation mode Μ 1 inverse matrix Mi; j matrix type elements P1 to P4 program Q Measuring point Ri~R5 Hot plate area t S Processing chamber 'U匣 box - W wafer λ\^~ν/5 Wafer area ΖMeasurement line width in-plane tendency Ζ1~Ζ16 Zernike coefficient Za can be improved The in-plane tendency 2^ can be improved. The in-plane tendency component Zf is improved. The in-plane tendency Zn in-plane tendency component 20 200915386 △ Τ, ΔΤ wide ΔΤ5 Temperature correction value △ Change amount of in-plane tendency 1 Coating development processing system 2匣Box station 3 processing station 4 medium face 5 匣 box mounting table 6, 100 transport road 7, 101 wafer transport body f 10 first transport device f 11 second transport device 20, 21, 22 photoresist coating device 23, 24 bottom coating device 30 to 34 development processing device 40, 41 chemical chamber 60 temperature adjusting device 61 Apparatus 62-64, 70, 80-83 high-precision temperature adjustment apparatus 65-68 high-temperature heat treatment apparatus, 71-74 pre-baking apparatus 75-79 post-baking apparatus 84-89 baking processing apparatus (PEB apparatus) after exposure 90, 91 attachment device 92, 93 heating device 94 peripheral exposure device 102 buffer cassette 110 line width measuring device 120 housing 121 heating portion 21 200915386 122 cooling portion 130 cover 130a exhaust portion 131 hot plate housing portion 140 hot plate 141 heater 142 temperature control device 150 first lift pin 151 lift drive mechanism 152 through hole 160 retaining member 161 support ring 161a discharge port 162 case 170 cooling plate 170a cooling member 171 rail 172 drive portion 173 slit 174 second lift pin 175 lift drive unit 180 feed port 190 temperature setting device 190 temperature setting device 200 calculation unit 201 input unit 202 data storage unit 203 program storage unit 204 communication unit 22