TWI602253B - Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus - Google Patents
Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
- Resistance Heating (AREA)
Description
本發明係與圓盤狀物件之液體處理設備及用於該設備中之加熱系統相關。 The present invention relates to a liquid handling apparatus for a disc member and a heating system for use in the apparatus.
液體的處理包含濕蝕刻及濕清潔，其中欲處理的晶圓表面區域係以處理液體加以濕潤，且晶圓的其中一層係藉此而加以移除，或藉此將雜質帶走。美國專利案第4,903,717號描述了一種用於液體處理的裝置。於此裝置中，可藉由對晶圓施加旋轉運動來協助液體的分佈。 The treatment of the liquid comprises wet etching and wet cleaning, wherein the surface area of the wafer to be treated is wetted with a treatment liquid, and one of the layers of the wafer is thereby removed, or thereby the impurities are carried away. U.S. Patent No. 4,903,717 describes a device for liquid processing. In this device, the distribution of the liquid can be assisted by applying a rotational motion to the wafer.
用於處理圓盤狀物件之表面的技術通常用於半導體產業中的矽晶圓，譬如：300或450mm直徑的晶圓。然而，這樣的技術可應用於其它類板狀的物件，如：光碟片、光罩、光刻板、磁盤、或平板顯示器。當這樣的技術用於半導體產業時，其也可應用於玻璃基板(如：應用於絕緣體上矽元件的製程中)、III-V族的基板(如：GaAs)、或任何其它的基板、或用於製造積體電路的載體。 The technique used to treat the surface of a disc member is typically used for tantalum wafers in the semiconductor industry, such as 300 or 450 mm diameter wafers. However, such techniques can be applied to other types of plate-like objects such as optical discs, reticle, lithography, magnetic disks, or flat panel displays. When such a technique is used in the semiconductor industry, it can also be applied to a glass substrate (eg, in a process for applying a germanium element on an insulator), a III-V substrate (eg, GaAs), or any other substrate, or A carrier for manufacturing an integrated circuit.
當使用加熱的製程液體時，存在有在整個晶圓表面上達到溫度均勻性的問題，且當晶圓的直徑增加時處理此問題的需求則變為更加急迫。 When a heated process liquid is used, there is a problem of achieving temperature uniformity across the wafer surface, and the need to address this problem becomes more urgent as the diameter of the wafer increases.
特別是，當晶圓的直徑增加時，一液體在施加於晶圓中央區域時的溫度與該相同液體徑向向外移動至晶圓周緣後的溫度之間的溫度差異也會增加。此情形導致隨與晶圓中心距離改變之變化的蝕刻速率，以及因此導致不良的製程均勻性。 In particular, as the diameter of the wafer increases, the temperature difference between the temperature of a liquid applied to the central region of the wafer and the temperature at which the same liquid moves radially outward to the periphery of the wafer also increases. This situation results in an etch rate that varies with distance from the center of the wafer, and thus poor process uniformity.
用於減輕此問題的習知處理方法包含由可動式手臂(即所謂的「動臂迴轉(boom swing)」分配器)來散佈製程液體；然而，這樣的情形涉及了成本的增加，以及設備與設備操作的複雜度增加。該問題可以藉由增加製程液體的流動，以及/或散佈高溫液體(如：去離子水)於晶圓相反側來處理至一定程度；然而，這些技術卻導致較高的製程液體消耗量。 A conventional processing method for mitigating this problem involves dispensing a process liquid by a movable arm (a so-called "boom swing" dispenser); however, such a situation involves an increase in cost, as well as equipment and The complexity of device operation increases. This problem can be addressed to some extent by increasing the flow of process liquids and/or spreading high temperature liquids (eg, deionized water) on the opposite side of the wafer; however, these techniques result in higher process liquid consumption.
共同擁有待審的美國專利申請案第2013/0061873描述裝有一紅外線加熱器之改良過的設備，該紅外線加熱器用於加熱晶圓，以加強製程的均勻性。雖然，那個專利申請案的設備改良了習知技術，但仍有提供進一步加強製程均勻性及控制的需求。 U.S. Patent Application Serial No. 2013/0061873, the entire disclosure of which is incorporated herein by reference in its entirety in its entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire portion Although the apparatus of that patent application has improved the prior art, there is still a need to further enhance process uniformity and control.
因此，在一實施態樣中，本發明係關於一種用於處理圓盤狀物件的設備。該設備包含：一旋轉夾盤，其用以相對於該旋轉夾盤的一上表面以一預定方向固持一圓盤狀物件；以及至少三個個別可控制紅外線加熱元件，其裝置於旋轉夾盤上表面上方，且在安裝於該旋轉夾盤上之時的一圓盤狀物件的下方。該紅外線加熱元件以相對於旋轉夾盤轉動靜止的方式來加以裝置。該至少三個個別可控制紅外線加熱元件以套疊構造來布置，以相鄰於置放在該旋轉夾盤上之時的一圓盤狀物件，界定個別可控制的內、中、及外加熱區域。 Accordingly, in one embodiment, the present invention is directed to an apparatus for processing a disc member. The apparatus includes: a rotating chuck for holding a disk member in a predetermined direction with respect to an upper surface of the rotating chuck; and at least three individually controllable infrared heating elements mounted on the rotating chuck Above the upper surface and below a disc member when mounted on the rotating chuck. The infrared heating element is mounted in such a manner as to be stationary relative to the rotating chuck. The at least three individually controllable infrared heating elements are arranged in a nested configuration to define an individually controllable inner, middle, and outer heating adjacent to a disc member disposed on the rotating chuck region.
根據本發明的該設備的較佳實施例中，該等加熱元件中每一者具有形狀及位置至少其中一者，藉以讓該等加熱元件每一者加熱與旋轉夾盤轉動軸不同距離的區域。 In a preferred embodiment of the apparatus according to the invention, each of the heating elements has at least one of a shape and a position whereby each of the heating elements heats an area at a different distance from the axis of rotation of the rotating chuck .
根據本發明的該設備的較佳實施例中，該等加熱元件每一者包含一曲線部分，該曲線部分實質上沿著一圓的一弧來延伸，且該圓對旋轉夾盤轉動軸係偏心的。 In a preferred embodiment of the apparatus according to the present invention, the heating elements each comprise a curved portion extending substantially along an arc of a circle and the circle is eccentric to the rotational axis of the rotating chuck of.
根據本發明，該設備的較佳實施例中，二個曲線部分中的第一者實質上沿著第一圓的圓弧來延伸，且二個曲線部分中的第二者實質上沿著第二圓的圓弧來延伸，且第一和第二圓周具有互相偏移的中心。 According to the invention, in a preferred embodiment of the apparatus, the first of the two curved portions extends substantially along the arc of the first circle, and the second of the two curved portions substantially follows the The circular arc of the two circles extends, and the first and second circumferences have centers offset from each other.
根據本發明，該設備的較佳實施例中，二個曲線部分中的每 一者實質上沿著相同圓的圓弧來延伸。 According to the invention, in a preferred embodiment of the apparatus, each of the two curved portions One extends substantially along an arc of the same circle.
根據本發明，該設備的較佳實施例中，該等加熱元件每一者包含二個直線部分，其二者藉由一個曲線部分來互相連接。 According to the invention, in a preferred embodiment of the apparatus, the heating elements each comprise two straight portions which are interconnected by a curved portion.
根據本發明，該設備的較佳實施例中，二個直線部分平行於彼此。 According to the invention, in a preferred embodiment of the apparatus, the two straight portions are parallel to each other.
根據本發明，該設備的較佳實施例中，該等加熱元件中的每一者包含沿著一圓的圓弧來延伸的一曲線部分，且其中每個加熱元件之圓和該等加熱元件至少其他二者之圓係同心的。 According to the invention, in a preferred embodiment of the apparatus, each of the heating elements comprises a curved portion extending along a circular arc of a circle, and wherein each of the heating element circles and the heating elements are at least The other two are concentric.
根據本發明，該設備的較佳實施例中，與該至少三個個別可控制紅外線加熱元件任何一者的發射部分外接的圓，並無相交於與該至少三個個別可控制紅外線加熱元件任何其他者的發射部分外接的圓。 According to the present invention, in a preferred embodiment of the apparatus, the circle circumscribing the emitting portion of any one of the at least three individually controllable infrared heating elements does not intersect any of the at least three individually controllable infrared heating elements. The circle of the other part of the transmitting part is external.
根據本發明，該設備的較佳實施例中，該設備包含一板，其對由該至少三個個別可控制紅外線加熱元件所發射出的紅外線輻射係可穿透的，且該板配置於該至少三個個別可控制紅外線加熱元件及置放於該旋轉夾盤上之時的圓盤狀物件之間。 According to the present invention, in a preferred embodiment of the apparatus, the apparatus includes a plate permeable to infrared radiation emitted by the at least three individually controllable infrared heating elements, and wherein the plate is disposed At least three individual controllable infrared heating elements are disposed between the disc members when placed on the rotating chuck.
根據本發明，該設備的較佳實施例中，該板係圍繞著該至少三個個別可控制紅外線加熱元件的一外殼的一部分，且該外殼。 In accordance with the present invention, in a preferred embodiment of the apparatus, the panel surrounds a portion of an outer casing of the at least three individually controllable infrared heating elements.
根據本發明，該設備的較佳實施例中，該外殼以相對於該旋轉夾盤轉動靜止的方式來加以裝置。 In accordance with the present invention, in a preferred embodiment of the apparatus, the housing is mounted in a rotationally fixed manner relative to the rotating chuck.
根據本發明，該設備的較佳實施例中，該外殼以相對於該旋轉夾盤轉動靜止的方式來加以裝置。 In accordance with the present invention, in a preferred embodiment of the apparatus, the housing is mounted in a rotationally fixed manner relative to the rotating chuck.
在另一實施態樣中，本發明和使用於處理圓盤狀物件的設備的一紅外線加熱組件相關。該紅外線加熱組件包含至少三個個別可控制紅外線加熱元件，其裝置於一共同的框架連接器中。該至少三個個別可控制紅外線加熱元件以套疊構造來加以布置，以便界定個別可控制的內、中、及外加熱區域。該等加熱元件每一者具有形狀和位置其中至少一者，藉以讓該等加熱元件每一者延伸通過從外接於紅外線加熱組件的圓的中心不同距離的區域。 In another embodiment, the invention is related to an infrared heating assembly for use in a device for processing a disc member. The infrared heating assembly includes at least three individually controllable infrared heating elements that are mounted in a common frame connector. The at least three individually controllable infrared heating elements are arranged in a nested configuration to define individually controllable inner, middle, and outer heating zones. Each of the heating elements has at least one of a shape and a position whereby each of the heating elements extends through an area of a different distance from a center of the circle circumscribing the infrared heating assembly.
根據本發明，該紅外線加熱組件的較佳實施例中，該至少三 個個別可控制紅外線加熱元件每一者包含至少一個曲線部分、及至少一個直線部分。 According to the present invention, in the preferred embodiment of the infrared heating assembly, the at least three Each of the individually controllable infrared heating elements includes at least one curved portion and at least one straight portion.
根據本發明，該紅外線加熱組件的較佳實施例中，相鄰的紅外線加熱元件的曲線部分等沿著同心的圓來延伸，且相鄰的紅外線加熱元件的直線部分係互相平行的。 According to the present invention, in a preferred embodiment of the infrared heating assembly, curved portions of adjacent infrared heating elements and the like extend along concentric circles, and straight portions of adjacent infrared heating elements are parallel to each other.
根據本發明，該紅外線加熱組件的較佳實施例中，共同的框架連接器包含數個電連接器，該電連接器和該至少三個個別可控制紅外線加熱元件的數量係相等的，藉此容許該至少三個個別可控制紅外線加熱元件每一者對一控制器來個別地連接，以個別地通電於該至少三個個別可控制紅外線加熱元件每一者。 According to the present invention, in a preferred embodiment of the infrared heating assembly, the common frame connector includes a plurality of electrical connectors, the electrical connector and the at least three individually controllable infrared heating elements being equal in number The at least three individually controllable infrared heating elements are each allowed to be individually connected to a controller to individually energize each of the at least three individually controllable infrared heating elements.
根據本發明，該紅外線加熱組件的較佳實施例中，該組件包含一外殼，其圍繞著該至少三個個別可控制紅外線加熱元件，該外殼包含一板，其形成該外殼的上部，且該板對由該至少三個個別可控制紅外線加熱元件所發射出的紅外線輻射係可穿透的。 According to the present invention, in a preferred embodiment of the infrared heating assembly, the assembly includes a housing surrounding the at least three individually controllable infrared heating elements, the housing including a plate forming an upper portion of the housing, and the housing The plate is permeable to infrared radiation emitted by the at least three individually controllable infrared heating elements.
在另一實施態樣中，本發明和一紅外線燈相關，該紅外線燈用於以如下方式加該熱圓盤狀工件：當紅外線燈和一圓盤狀工件相對於彼此旋轉時，紅外線燈發射光至圓盤狀工件上。該紅外線燈包含：一弧形發射部分，其實質上描繪出一圓且該圓相對於該圓盤狀工件的轉動軸為偏心的；及一鄰接發射部分，其配置於該圓內側，且其從該弧形發射部分實質上沿著該圓的一弦來延伸。 In another embodiment, the invention is related to an infrared lamp for applying the hot disc-shaped workpiece in such a manner that when the infrared lamp and a disc-shaped workpiece are rotated relative to each other, the infrared lamp emits Light onto the disc-shaped workpiece. The infrared lamp includes: an arc-shaped emitting portion that substantially depicts a circle that is eccentric with respect to a rotational axis of the disc-shaped workpiece; and an adjacent emitting portion that is disposed inside the circle and that is The arcuate emitting portion extends substantially along a chord of the circle.
根據本發明，用於加熱圓盤狀工件的紅外線燈的較佳實施例中，鄰接發射部分具有直線形狀。 According to the present invention, in a preferred embodiment of the infrared lamp for heating a disk-shaped workpiece, the adjacent emitting portion has a linear shape.
根據本發明，用於加熱圓盤狀工件的紅外線燈的較佳實施例中，紅外線燈包含一第二弧形發射部分，該第二弧形發射部分位於與該弧形發射部分為相反側的該鄰接發射部分的一端。 According to the present invention, in a preferred embodiment of the infrared lamp for heating a disk-shaped workpiece, the infrared lamp includes a second arc-shaped emitting portion located on an opposite side of the arc-shaped emitting portion. The one end of the adjacent emitting portion.
根據本發明，用於加熱圓盤狀工件的紅外線燈的較佳實施例中，鄰接發射部分整體地連接至弧形發射部分的一端。 According to the present invention, in a preferred embodiment of the infrared lamp for heating a disk-shaped workpiece, the adjoining emitting portion is integrally connected to one end of the arcuate emitting portion.
根據本發明，用於加熱圓盤狀工件的紅外線燈的較佳實施例中，弧形發射部分及鄰接發射部分係整體地形成，且每一者於橫剖面中係 圓形的。 According to the present invention, in a preferred embodiment of the infrared lamp for heating a disk-shaped workpiece, the arc-shaped emitting portion and the adjacent emitting portion are integrally formed, and each of them is in a cross section. round.
在另一實施態樣中，本發明和一加熱裝置相關，該加熱裝置包含一紅外線燈，其放置成面向一圓盤狀的工件，該加熱裝置以如下方式來加該熱圓盤狀工件：當該紅外線燈和該圓盤狀的工件相對彼此轉動時，該紅外線燈發射光至圓盤狀的工件上。該紅外線燈包含：一弧形發射部分，其實質上描繪了一圓且該圓相對於該圓盤狀工件的轉動軸為偏心的；及一鄰接發射部分，其配置於該圓內側，且其從該弧形發射部分實質上沿著該圓的一弦來延伸。該加熱設備包含多個紅外線燈，其中該紅外線燈的弧形發射部分彼此互相同心地放置。 In another embodiment, the invention is related to a heating device comprising an infrared lamp placed to face a disk-shaped workpiece, the heating device adding the hot disk-shaped workpiece in the following manner: When the infrared lamp and the disk-shaped workpiece are rotated relative to each other, the infrared lamp emits light onto the disk-shaped workpiece. The infrared lamp includes: an arc-shaped emitting portion that substantially depicts a circle that is eccentric with respect to a rotational axis of the disk-shaped workpiece; and an adjacent emitting portion that is disposed inside the circle and that is The arcuate emitting portion extends substantially along a chord of the circle. The heating device comprises a plurality of infrared lamps, wherein the arcuate emitting portions of the infrared lamps are placed concentrically with each other.
根據本發明，加熱裝置的較佳實施例中，該等紅外線燈每一者的鄰接發射部分，並不會相交於相對應的相鄰內部紅外線燈的弧形發射部分的外接圓。 According to the invention, in a preferred embodiment of the heating device, the adjacent emitting portions of each of the infrared lamps do not intersect the circumscribed circle of the arcuate emitting portion of the corresponding adjacent internal infrared lamp.
根據本發明，加熱裝置的較佳實施例中，紅外線燈更包含一第二弧形發射部分，該第二弧形發射部分位於與該弧形發射部分為相反側的鄰接發射部分的一端。 According to a preferred embodiment of the heating apparatus of the present invention, the infrared lamp further includes a second arcuate emitting portion located at one end of the abutting emitting portion on the opposite side of the arcuate emitting portion.
根據本發明，加熱裝置的較佳實施例中，弧形發射部分及第二弧形發射部分的端部界定了一角度，該角度的頂點位於圓盤狀物件的轉動軸上。 According to the invention, in a preferred embodiment of the heating device, the ends of the arcuate emitting portion and the second arcuate emitting portion define an angle at which the apex of the angle lies on the axis of rotation of the disk member.
根據本發明，加熱裝置的較佳實施例中，該等紅外線燈每一者之鄰接發射部分係整體地連接至相對應的弧形發射部分的一端。 According to the invention, in a preferred embodiment of the heating device, the adjacent emitting portions of each of the infrared lamps are integrally connected to one end of a corresponding curved emitting portion.
根據本發明，加熱裝置的較佳實施例中，該等紅外線燈每一者之鄰接發射部分並不會從由相對應的弧形發射部分所描繪出的圓向外延伸。 In accordance with the present invention, in a preferred embodiment of the heating device, the adjacent emitting portions of each of the infrared lamps do not extend outwardly from a circle depicted by the corresponding curved emitting portion.
10‧‧‧夾盤 10‧‧‧ chuck
11‧‧‧環齒輪 11‧‧‧ring gear
12‧‧‧主體 12‧‧‧ Subject
14‧‧‧中央中空柱 14‧‧‧Central hollow column
15‧‧‧插口 15‧‧‧ socket
16‧‧‧夾銷 16‧‧‧ pin
18‧‧‧噴嘴 18‧‧‧Nozzles
19‧‧‧開口 19‧‧‧ openings
20‧‧‧加熱組件 20‧‧‧heating components
22‧‧‧外殼 22‧‧‧ Shell
24‧‧‧蓋板 24‧‧‧ Cover
26‧‧‧螺絲 26‧‧‧ screws
21/23/25/41/43/45/51/53/55/57‧‧‧燈(加熱元件) 21/23/25/41/43/45/51/53/55/57‧‧‧ lamps (heating elements)
21-1/21-3/23-1/23-3/25-1//25-3‧‧‧曲線部份 21-1/21-3/23-1/23-3/25-1//25-3‧‧‧ Curve section
21-2/23-2/25-2‧‧‧直線部份 21-2/23-2/25-2‧‧‧ Straight line
21-1'/21-3'/23-1'/23-3'/25-1'/25-3'‧‧‧直線部份 21-1'/21-3'/23-1'/23-3'/25-1'/25-3'‧‧‧ Straight line
21-2'/23-2'/25-2'‧‧‧曲線部份 21-2'/23-2'/25-2'‧‧‧ Curve section
29/32/59‧‧‧框架 29/32/59‧‧‧Frame
31‧‧‧反射鍍膜 31‧‧‧Reflective coating
34‧‧‧定子 34‧‧‧ Stator
36‧‧‧轉動子 36‧‧‧Rotator
在參照隨附圖式閱讀以下本發明的較佳實施例之詳細敘述後，本發明的其它目的、特徵、優點將更為顯而易見，其中：圖1係根據本發明實施例一用於處理圓盤狀物件之設備的分解透視圖； 圖2係圖1實施例的俯視圖；圖3係通過描繪於圖1和2中夾盤的軸剖面圖，其沿著圖2中的線段III-III來截取；圖4係根據本發明之裝置的另一實施例之圖，該圖類似於圖2的俯視圖；圖5係根據本發明之裝置的再一實施例之圖，該圖類似於圖2的俯視圖；圖6係根據本發明之裝置的又一實施例之圖，該圖類似於圖2的俯視圖；圖7係一示意圖，用於更好理解用於圖6實施例中的燈之相關形狀和尺寸；圖8顯示當使用圖1至3實施例的IR燈組件且全部三個IR燈係關閉時，所蝕刻的材料深度之分佈；圖9係顯示當使用圖1至3實施例的IR燈組件且全部三個IR燈係開啟時，所蝕刻的材料深度之分佈；圖10係顯示當使用圖1至3實施例的IR燈組件，且內部及中間IR燈係開啟以及外部IR燈關閉時，所蝕刻的材料深度之分佈；及圖11係顯示當使用圖1至3實施例的紅外燈線組件，且內部及中間IR燈係關閉以及外部IR燈開啟時，所蝕刻的材料深度之分佈。 Other objects, features, and advantages of the present invention will become more apparent from the aspects of the appended claims appended claims claim An exploded perspective view of the device of the article; Figure 2 is a plan view of the embodiment of Figure 1; Figure 3 is a cross-sectional view through the chuck depicted in Figures 1 and 2, taken along line III-III in Figure 2; Figure 4 is a device in accordance with the present invention Figure 2 is a plan view similar to Figure 2; Figure 5 is a view of still another embodiment of the device according to the present invention, which is similar to the top view of Figure 2; Figure 6 is a device according to the present invention A further embodiment of the drawing, which is similar to the top view of FIG. 2; FIG. 7 is a schematic view for better understanding the relevant shape and size of the lamp used in the embodiment of FIG. 6; FIG. 8 shows the use of FIG. The distribution of the depth of the etched material when the IR lamp assembly of the embodiment is turned off and all three IR lamps are turned off; FIG. 9 shows the IR lamp assembly when all of the three IR lamps are turned on when the embodiment of FIGS. 1 to 3 is used. The distribution of the depth of the etched material; FIG. 10 shows the distribution of the etched material depth when the IR lamp assembly of the embodiment of FIGS. 1 to 3 is used and the internal and intermediate IR lamps are turned on and the external IR lamp is turned off; And Figure 11 shows the infrared light line assembly when using the embodiment of Figures 1 to 3, and the internal and intermediate IR lamp systems When the light is turned off and an external IR, the depth distribution of the etched material.
現在參照圖式，圖1和圖2描繪由二個主要次組件構成的設備，該主要次組件係基底旋轉夾盤10和模組式的紅外線加熱組件20。旋轉夾盤10包含一轉動主體12，其裝置成用於繞著靜止的一中央中空柱14來轉動。接著，該中央中空柱14包含：一中央噴嘴18，當該中央噴嘴18裝置於旋轉夾盤上時，用以散佈製程液體或氣體至晶圓下側；以及一系列母端電插口15，其位於中央中空柱14的肩部，該系列的母端電插口接收相對應的公端連接器(未顯示，該公端連接器由加熱組件20向下懸垂)，且供應驅動電流至加熱組件20內的IR加熱燈。 Referring now to the drawings, Figures 1 and 2 depict an apparatus consisting of two major sub-assemblies, a base rotating chuck 10 and a modular infrared heating assembly 20. Rotating chuck 10 includes a rotating body 12 that is configured to rotate about a stationary central hollow column 14. Next, the central hollow column 14 includes: a central nozzle 18 for distributing process liquid or gas to the underside of the wafer when the central nozzle 18 is mounted on the rotating chuck; and a series of female electrical sockets 15, Located at the shoulder of the central hollow post 14, the series of female electrical receptacles receive corresponding male connectors (not shown, which are suspended downwardly from the heating assembly 20) and supply drive current to the heating assembly 20 IR heating lamp inside.
夾盤主體12具有一系列被裝置於其中的夾銷16，其一般性運作如於上述參考的美國專利第4,903,717中所述，該等夾銷16係藉由一共同環齒輪加以一起驅動，該共同環齒輪係在一徑向外部開啟位置與徑向內部關閉位置之間，其中這些夾銷的上端係與待處理圓盤狀物件的邊緣嚙合。 The chuck body 12 has a series of pinned pins 16 that are mounted therein, which are generally operated as described in the above-referenced U.S. Patent No. 4,903,7, which is incorporated by a common ring gear. The common ring gear is between a radially outer open position and a radially inner closed position, wherein the upper ends of the pins engage the edges of the disc member to be treated.
於此實施例中的加熱組件20構成一模組單元，該模組單元包含一下部碟狀外殼或外殼22(其包含IR燈21、23、25)。蓋板24藉由一系列的周圍螺絲26(其於此實施例中數量為六)加以鎖合至下部外殼22上。 The heating assembly 20 in this embodiment constitutes a modular unit that includes a lower dished casing or casing 22 (which includes IR lamps 21, 23, 25). The cover plate 24 is locked to the lower outer casing 22 by a series of peripheral screws 26 (which are six in this embodiment).
本實施例中，蓋板24係一板件，該板件由可穿透IR輻射(其由IR燈21、23、25發射出)波長的材料所形成，以及蓋板24可由如藍寶石或石英玻璃來形成，如熟習此領域者所熟知。蓋板24具有於其中形成的小中央開口19，以便容許塗佈噴嘴18上端通過。 In this embodiment, the cover plate 24 is a plate member formed of a material that can penetrate the wavelength of IR radiation (which is emitted by the IR lamps 21, 23, 25), and the cover plate 24 can be made of, for example, sapphire or quartz. Glass is formed as is well known to those skilled in the art. The cover plate 24 has a small central opening 19 formed therein to allow passage of the upper end of the coating nozzle 18.
於加熱組件20的外殼中，亦即於下部外殼22之內以及於透明蓋板24之下，此處裝置了一組三個的紅外線加熱燈21、23、25、該紅外線加熱燈由共用的框架29來支撐，該框架也包含相關供電線路(其未表示於圖)。於此實施例中，由外殼(其由下部外殼22及上部蓋板24所形成)、框架29、以及燈21、23、25所形成的組件被牢固地安裝至靜止的中央中空柱14。 In the outer casing of the heating assembly 20, that is, within the lower outer casing 22 and below the transparent cover 24, a set of three infrared heating lamps 21, 23, 25 are arranged here, and the infrared heating lamps are shared. Frame 29 is supported, and the frame also contains associated power lines (which are not shown). In this embodiment, the assembly formed by the outer casing (which is formed by the lower outer casing 22 and the upper cover 24), the frame 29, and the lamps 21, 23, 25 is securely mounted to the stationary central hollow column 14.
此刻參照圖2，吾人可以看出晶圓W此時被鄰近加熱組件20的外周緣突出的夾銷16的端部所支撐。圖2和圖3中的假想線標出當晶圓W受該裝置所固持時的位置，其中晶圓W的下側以一小預定間隙與蓋板24分隔開。 Referring now to Figure 2, it can be seen that the wafer W is now supported by the end of the pin 16 projecting adjacent the outer periphery of the heating assembly 20. The imaginary lines in Figures 2 and 3 indicate the position when the wafer W is held by the device, wherein the underside of the wafer W is separated from the cover plate 24 by a small predetermined gap.
晶圓W被置於加熱組件20上方的中心，該加熱組件20又被置於下方的旋轉夾盤轉動軸的中心上。吾人將能理解旋轉夾盤10因此加以設計成來固持特定直徑的晶圓W。本文敘述的實施例中，晶圓直徑為現今矽晶圓普遍的直徑300mm。然而，該裝置可自然地設計成來固持其它直徑(如：200mm以及450mm)的圓盤狀物件。 The wafer W is placed in the center above the heating assembly 20, which in turn is placed in the center of the rotating shaft of the rotating chuck below. We will understand that the rotating chuck 10 is therefore designed to hold a wafer W of a particular diameter. In the embodiments described herein, the wafer diameter is 300 mm in diameter, which is common today. However, the device can be naturally designed to hold disc members of other diameters (eg, 200 mm and 450 mm).
在圖2的平面圖中，吾人可看見於本實施例中三個加熱元件 (IR燈)中的每一者係由二個曲線部分(就外部IR燈25而言的25-1及25-3)所組成，而該二個曲線部分係藉由直線部分(就外部IR燈25而言的25-2)來加以互連。中間及內部的IR燈23及21分別具有相同的形狀。因此，本實施例的IR燈21、23、25一般為C形。此外，雖然這些IR燈的曲線部分(如：25-1、25-3)實質上依循著一個圓弧，且雖然全部三個IR燈的相鄰曲線部分較佳為實質上同心，但那些曲線部分所描繪出的圓於本實施例中並無和加熱組件20的中心同心，且因此並無和旋轉夾盤轉動軸同心。 In the plan view of Figure 2, we can see three heating elements in this embodiment. Each of the (IR lamps) consists of two curved portions (25-1 and 25-3 for the external IR lamp 25), and the two curved portions are separated by a straight portion (for external IR) 25-2) of the lamp 25 are interconnected. The intermediate and inner IR lamps 23 and 21 have the same shape, respectively. Therefore, the IR lamps 21, 23, 25 of the present embodiment are generally C-shaped. In addition, although the curved portions of these IR lamps (eg, 25-1, 25-3) substantially follow an arc, and although the adjacent curved portions of all three IR lamps are preferably substantially concentric, those curves The circle depicted in part is not concentric with the center of the heating assembly 20 in this embodiment and is therefore not concentric with the axis of rotation of the rotating chuck.
於是，在本實施例中，IR燈21、23、25的位置和形狀使得當將晶圓W藉由夾盤10相對於靜止的IR燈(加熱元件)21、23、25加以轉動時，每個加熱元件相對於轉動的晶圓W有效地徑向「移動」，於此每個加熱元件加熱一環形區域，該環形區域的徑向長度係顯著地大於該等加熱元件的橫切面直徑。對本發明而言，這些區域藉由圖2中以間斷線顯示的圓來界定，且這些區域於圖2中加以標明為Z1、Z2、及Z3。 Thus, in the present embodiment, the position and shape of the IR lamps 21, 23, 25 are such that when the wafer W is rotated by the chuck 10 relative to the stationary IR lamps (heating elements) 21, 23, 25, each The heating elements are effectively "moved" radially relative to the rotating wafer W, where each heating element heats an annular region having a radial extent that is substantially greater than the cross-sectional diameter of the heating elements. For the purposes of the present invention, these regions are defined by the circles shown in FIG. 2 as broken lines, and these regions are designated as Z1, Z2, and Z3 in FIG.
吾人能理解每個加熱元件也造成區域中(或與其相鄰的區域)一定程度的加熱。於圖2中的間斷線圓因此標示出主要加熱效應由一加熱元件改變至下一加熱元件的位置。 We can understand that each heating element also causes a certain degree of heating in the area (or the area adjacent thereto). The discontinuous line circle in Figure 2 thus indicates that the primary heating effect is changed from one heating element to the next heating element.
於圖3中，吾人可得知框架29被支撐於外殼22和蓋板24之內，且於本實施例中，該加熱組件20的外殼被牢固地固定至靜止的中央中空柱14，且因此框架29和IR燈21、23、25也以靜止的形式加以裝置至中央中空柱14。下部外殼部分或外殼22的面向上表面較佳設置一合適的IR反射鍍膜31，以便來幫助引導經由IR燈21、23、25所發散的IR輻射來向上通過透明蓋板24且引導至晶圓W的面向下表面。 In FIG. 3, it can be seen that the frame 29 is supported within the outer casing 22 and the cover plate 24, and in the present embodiment, the outer casing of the heating assembly 20 is securely fixed to the stationary central hollow column 14, and thus The frame 29 and the IR lamps 21, 23, 25 are also mounted to the central hollow column 14 in a stationary form. Preferably, the lower outer casing portion or the upwardly facing surface of the outer casing 22 is provided with a suitable IR reflective coating 31 to assist in directing the IR radiation diverging via the IR lamps 21, 23, 25 upwardly through the transparent cover 24 and onto the wafer. The downward facing surface of W.
靜止的中央中空柱14安裝至裝置的框架32上，且於本實施例中框架32也支撐定子34。定子34接著驅動轉子36(其連接至旋轉夾盤10的主體12)。於圖3中也可見以上提過的環齒輪11，且環齒輪11將多個夾銷16一起驅動。 The stationary central hollow column 14 is mounted to the frame 32 of the device, and in this embodiment the frame 32 also supports the stator 34. The stator 34 then drives a rotor 36 that is coupled to the body 12 of the rotating chuck 10. The ring gear 11 mentioned above can also be seen in FIG. 3, and the ring gear 11 drives the plurality of pin 16 together.
舉例來說，如和共同擁有待審美國專利申請案第2013/0061873揭露的加熱組件相關所描述，吾人能理解本文描述的實施例中，整個加熱組件以靜止的形式加以裝置於中央中空柱14之上。 For example, as described in connection with the heating assembly disclosed in co-pending U.S. Patent Application Serial No. 2013/0061873, it is to be understood that in the embodiment described herein, the entire heating assembly is mounted in a stationary form to the central hollow column 14 Above.
圖4描繪另一實施例，其中紅外線燈21’、23’、25’具有與先前實施例不同的形狀。特別是，每個IR燈包含二個直線部分21-1’、21-3’、23-1’、23-3’、25-1’、25-3’、以及一個曲線部分21-2’、23-2’、25-2’。如關於先前實施例所描述，這些元件直線部分的位置和形狀造成加熱區域的產生。 Fig. 4 depicts another embodiment in which the infrared lamps 21', 23', 25' have different shapes from the previous embodiments. In particular, each IR lamp includes two straight portions 21-1', 21-3', 23-1', 23-3', 25-1', 25-3', and a curved portion 21-2' , 23-2', 25-2'. As described with respect to the previous embodiments, the position and shape of the straight portions of these elements cause the generation of heated regions.
圖5描繪又一實施例，其中三個加熱元件41、43、45的每一者係連續彎曲管狀元件。此外，雖然這些加熱元件一般依循著一個圓弧，且雖然全部的三個加熱元件較佳實質上同心，但那些加熱元件描繪的圓於本實施例中並無和加熱組件20的中心同心，且因此並無和旋轉夾盤轉動軸同心。 Figure 5 depicts a further embodiment in which each of the three heating elements 41, 43, 45 is a continuous curved tubular element. Moreover, while these heating elements generally follow a circular arc, and although all three heating elements are preferably substantially concentric, the circles depicted by those heating elements are not concentric with the center of the heating assembly 20 in this embodiment, and Therefore, it is not concentric with the rotating chuck rotating shaft.
於是，如先前實施例般，在本實施例中，加熱元件41、43、45的位置和形狀係使得當相對於靜止的加熱元件41、43、45藉由夾盤10來轉動晶圓W時，每個加熱元件也加熱一環形區域，該環形區域的徑向長度係顯著地大於加熱元件的橫剖面直徑。 Thus, as in the previous embodiment, in the present embodiment, the heating elements 41, 43, 45 are positioned and shaped such that when the wafer W is rotated by the chuck 10 with respect to the stationary heating elements 41, 43, 45 Each heating element also heats an annular region having a radial extent that is significantly greater than the cross-sectional diameter of the heating element.
圖6和圖7說明用於加熱燈設計的更進一步方法。於此實施例中，四個個別的可控IR加熱燈51、53、55、57，以和先前實施例相關一般性描述的方式，加以裝置於一合適的承載框架59上。外殼20及旋轉夾盤10係如同先前描述一般。 Figures 6 and 7 illustrate a further method for heating the lamp design. In this embodiment, four individual controllable IR heating lamps 51, 53, 55, 57 are mounted on a suitable carrier frame 59 in a manner generally described in connection with the prior embodiments. The outer casing 20 and the rotating chuck 10 are as previously described.
圖7的概念圖展現出這些燈51、53、55、57的形狀和尺寸之間的相互關係。特別是，燈53曲線部分的外周緣描繪出一圓R1，該圓R1與燈51曲線部分的內周緣係相符的。同樣地，燈55曲線部分的外周緣描繪一圓R2，該圓R2與燈53曲線部分的內周緣係相符的，以及燈57曲線部分的外周緣描繪一圓R3，該圓R3與燈55曲線部分的內周緣係相符的。此外，最大的燈51的外周緣和環狀外殼20的四分之一扇形係趨近相符。 The conceptual diagram of Fig. 7 shows the relationship between the shapes and sizes of these lamps 51, 53, 55, 57. In particular, the outer circumference of the curved portion of the lamp 53 depicts a circle R1 which coincides with the inner circumference of the curved portion of the lamp 51. Similarly, the outer circumference of the curved portion of the lamp 55 depicts a circle R2 that coincides with the inner circumference of the curved portion of the lamp 53, and the outer circumference of the curved portion of the lamp 57 depicts a circle R3 that is curved with the portion of the lamp 55. The inner circumference is consistent. Further, the outer circumference of the largest lamp 51 and the quarter fan of the annular casing 20 are close to each other.
因此，當如圖6所示般地裝置燈51、53、55、57時，且當晶圓相對於靜止的燈轉動時，晶圓W的加熱區域中有效地沒有間隙。 Therefore, when the lamps 51, 53, 55, 57 are mounted as shown in Fig. 6, and when the wafer is rotated with respect to the stationary lamp, there is effectively no gap in the heating region of the wafer W.
吾人注意到每個先前實施例中的加熱燈較佳可個別地控制。特別較佳的是，不僅僅每個加熱燈可以獨立於其它的加熱燈來啟動或 是關閉，也可以獨立地改變用於每個加熱燈的瓦數。這允許各種有利的製程控制。 It has been noted that the heat lamps of each of the previous embodiments are preferably individually controllable. It is particularly preferred that not only each heating lamp can be activated independently of the other heating lamps or It is off, and the wattage for each heating lamp can also be changed independently. This allows for a variety of advantageous process controls.
譬如：為了比較的目的，圖8顯示當使用圖1至3的加熱燈組件但卻無供電於三個IR加熱燈21、23、25中的任一者時所完成的蝕刻輪廓。如所見般，和周邊區域相比，於晶圓中央區域中有顯著較大的自晶圓的材料移除量。這是因為分配於晶圓中心的蝕刻劑，當徑向向外穿過一300mm直徑的晶圓時，已實質上冷卻。此外，不論選擇哪一種蝕刻化學品、溫度及流量來刻蝕4Å的材料或9Å的材料，這樣非期望的蝕刻輪廓係大致相同。在任一情況下，於晶圓外周緣處被移除的材料係約少2Å。 For example, for comparison purposes, FIG. 8 shows an etch profile that is completed when the heater lamp assembly of FIGS. 1 through 3 is used but is not powered by any of the three IR heater lamps 21, 23, 25. As can be seen, there is a significantly greater amount of material removal from the wafer in the central region of the wafer compared to the surrounding region. This is because the etchant dispensed at the center of the wafer is substantially cooled as it passes radially outward through a 300 mm diameter wafer. In addition, the undesired etch profile is approximately the same regardless of which etch chemistry, temperature, and flow rate are selected to etch 4Å of material or 9Å of material. In either case, the material removed at the outer periphery of the wafer is approximately 2 Å less.
相比之下，圖9顯示藉由適當地供電於全部的三個IR燈21、23、25而所完成的蝕刻輪廓。該蝕刻輪廓相對於圖8的蝕刻輪廓係近乎倒置的。吾人應注意到這些蝕刻輪廓以低於圖8數據的流率及處理時間來完成。吾人應注意到對許多製程的規格而言，理想的蝕刻輪廓不一定係平坦的；相反地，如圖9所示，期望的蝕刻輪廓通常要求晶圓周圍區域的「過度蝕刻」，如：移除約多於晶圓中心處材料10%的晶圓邊緣處材料。如圖9所示，本發明的設備及加熱組件係特別適合於此類應用。 In contrast, Figure 9 shows the etch profile accomplished by appropriately supplying all of the three IR lamps 21, 23, 25. The etch profile is nearly inverted relative to the etch profile of FIG. We should note that these etch profiles are done at a lower flow rate and processing time than the data of Figure 8. We should note that for many process specifications, the ideal etch profile is not necessarily flat; conversely, as shown in Figure 9, the desired etch profile typically requires "over-etching" of the area around the wafer, such as: Except for material at the edge of the wafer that is more than 10% of the material at the center of the wafer. As shown in Figure 9, the apparatus and heating assembly of the present invention are particularly suitable for such applications.
圖10顯示出當僅供電於IR燈21、及23時所完成的蝕刻輪廓，而圖11顯示出當僅供電於IR燈25時所完成的蝕刻輪廓。不論在哪種情況下所導致的蝕刻輪廓都不類似於圖9的蝕刻輪廓。 FIG. 10 shows the etch profile completed when only the IR lamps 21, and 23 are supplied, and FIG. 11 shows the etch profile completed when only the IR lamp 25 is supplied. The etch profile resulting in either case is not similar to the etch profile of FIG.
雖然本發明已就其各種不同較佳的實施例加以描述，但吾人能理解這些實施例僅僅係提供來說明本發明，且不應被作為托詞來限制由附加申請專利範圍的本質與真正範疇所授予的保護範圍。 While the invention has been described with respect to the various embodiments of the present invention, it is understood that these embodiments are merely provided to illustrate the invention and should not be construed as The scope of protection granted.
10‧‧‧夾盤 10‧‧‧ chuck
12‧‧‧主體 12‧‧‧ Subject
14‧‧‧中央中空柱 14‧‧‧Central hollow column
15‧‧‧插口 15‧‧‧ socket
16‧‧‧夾銷 16‧‧‧ pin
18‧‧‧噴嘴 18‧‧‧Nozzles
19‧‧‧開口 19‧‧‧ openings
20‧‧‧加熱組件 20‧‧‧heating components
21/23/25‧‧‧燈(加熱元件) 21/23/25‧‧‧ lamps (heating elements)
22‧‧‧外殼 22‧‧‧ Shell
24‧‧‧蓋板 24‧‧‧ Cover
26‧‧‧螺絲 26‧‧‧ screws
29‧‧‧框架 29‧‧‧Frame
Claims (33)
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| US13/650,916 US9093482B2 (en) | 2012-10-12 | 2012-10-12 | Method and apparatus for liquid treatment of wafer shaped articles |
| US13/932,926 US9748120B2 (en) | 2013-07-01 | 2013-07-01 | Apparatus for liquid treatment of disc-shaped articles and heating system for use in such apparatus |
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| TW201434101A TW201434101A (en) | 2014-09-01 |
| TWI602253B true TWI602253B (en) | 2017-10-11 |
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| KR101681183B1 (en) | 2014-07-11 | 2016-12-02 | 세메스 주식회사 | Apparatus for treating a substrate |
| KR102069078B1 (en) * | 2014-08-27 | 2020-01-23 | 주식회사 제우스 | Substrate precessing apparatus |
| KR102082151B1 (en) * | 2014-10-10 | 2020-02-27 | 주식회사 제우스 | Heater apparatus for substrate processing and liquid processing apparatus for substrate comprising the same |
| JP6343100B2 (en) * | 2014-10-10 | 2018-06-13 | ゼウス カンパニー リミテッド | Substrate processing heater device and substrate liquid processing apparatus having the same |
| KR102123563B1 (en) * | 2014-10-20 | 2020-06-16 | 주식회사 제우스 | Apparatus for supporting substrate and liquid processing apparatus for substrate comprising the same |
| JP6658195B2 (en) * | 2016-03-28 | 2020-03-04 | 大日本印刷株式会社 | Etching method and etching apparatus |
| CN109155273B (en) * | 2016-05-26 | 2024-01-02 | 三益半导体工业株式会社 | Wafer heating and holding mechanism and method for turntable, and wafer rotation and holding device |
| US10720343B2 (en) * | 2016-05-31 | 2020-07-21 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
| KR102263006B1 (en) | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | Substrate processing apparatus |
| KR102407266B1 (en) | 2019-10-02 | 2022-06-13 | 세메스 주식회사 | A support unit, a substrate processing apparatus comprising the same and a substrate processing method |
| CN111403316A (en) * | 2020-03-18 | 2020-07-10 | 沈阳拓荆科技有限公司 | Heating system for improving temperature uniformity of silicon wafer |
| KR102564838B1 (en) | 2020-07-24 | 2023-08-10 | 세메스 주식회사 | Support unit, substrate processing apparatus including same |
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| TW563196B (en) * | 2000-10-30 | 2003-11-21 | Dainippon Screen Mfg | Substrate processing apparatus |
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| JP2000164555A (en) * | 1998-11-30 | 2000-06-16 | Ebara Corp | Substrate drying device and method therefor |
| JP3659863B2 (en) * | 2000-04-06 | 2005-06-15 | 大日本スクリーン製造株式会社 | Heat treatment equipment |
| JP2005032933A (en) * | 2003-07-10 | 2005-02-03 | Hitachi Kokusai Electric Inc | Substrate processor |
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| TW563196B (en) * | 2000-10-30 | 2003-11-21 | Dainippon Screen Mfg | Substrate processing apparatus |
| WO2008059686A1 (en) * | 2006-11-14 | 2008-05-22 | Tokyo Electron Limited | Substrate processing method and substrate processing system |
| TW200830060A (en) * | 2006-11-14 | 2008-07-16 | Tokyo Electron Ltd | Substrate processing method and substrate processing system |
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| JP2014090168A (en) | 2014-05-15 |
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