200832806 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種共面波導結構之技術領域’尤指一 種能形成多數電容與電感並聯等效電路之梳狀共面波導接 地面缺陷結構。 【先前技術】 如第1 8圖所示，為習用之共面波導接地面缺陷結構 (Defected Ground Structure for Coplanar Waveguides ;簡稱DGSCPW)示意圖，其係於一介電材質製成之基板8 0上設置二接地面81、82與一導線83組成梳狀共面 波導結構，且各接地面8 1、8 2與導線8 3之間分別具 有一間隙8 4，而各接地面8 1、8 2分別以蝕刻方式形 成一缺陷結構8 5、8 6。 前述之共面波導接地面缺陷結構在利用導線δ 3傳輸 訊號時，缺陷結構8 5、只β奋:ηχ上、 0 a b會形成一個等效阻抗負載效 應0 m rfn 、研I曰結構8 5、8 6係呈簡單之 形形態i若要增加特徵阻抗值便需要調整縣結構㈠ 8 6之見度與南度，在理★入 L ^ 順上共面波導結構之接地面係 半热限接地面’加大缺陷結構8 5、8 6之尺寸不奋右 題，但由於缺陷結構8 5、 、曰有 ^ b 86僅能調整高度與寬度， 可调整之靈活動度明％ 、、不足。故而前述之共面波導接地 200832806 缺陷結構實有再加以改進之必要。 發明人遂研發一項新式共面波導接地面缺陷結構並 提出本國專利申請案號第9 4 1 0 1 5 9 1號，鑑於該案 可達到有效縮小缺陷結構面積之功效’並且獲得所需之通 帶/禁帶特性、洩漏波特性以及慢波特性，而進一步研究 其他可行方案。 【發明内容】 本發明之主要目的，在於解決上述的問題而提供一種 梳狀共面波導接地面缺陷結構，其主要係於梳狀共面波導 結構之各接地面對稱設有至少一缺陷結構，且各缺陷結構 包含有二條以上併列之導溝，各導溝之間以一連接槽相連 通，且該連接槽係與梳狀共面波導結構之間隙相通，使梳 狀共面波導結構具有自身共振特性，並形成多數電容、電 感並聯之等效電路，而可於在相同特徵阻抗之前提下達到 有效縮小缺陷結構面積之功效，並且獲得所需之通一禁帶 特性(passband-stopband characteristic )、曳漏波特 性（leaky-wave characteristic )以及慢波特性（ slow-wave characteristic)0 本發明之次一目的，係在於藉由調整缺陷結構之總寬 度、總長度，導溝之寬度以及連接槽之高度之尺寸，而可 以改變整個梳狀共面波導結構之共振頻率、電容值、電感 200832806 值以及洩漏波頻率與禁帶中心頻率，並且能提升其調整靈 活度。 為達前述之目的，本發明係由二接地面與設置於兩接 地面之間的一導線組成該梳狀共面波導結構，且各接地面 與該導線之間分別具有一間隙；而各接地面對稱設有至少 一缺陷結構，各缺陷結構包含有二以上併列之導溝，各導 溝之間係由一連接槽相連通，且該連接槽係與該間隙相通 〇 本發明之上述及其他目的與優點，不難從下述所選用 實施例之詳細說明與附圖中，獲得深入了解。 當然，本發明在某些另件上，或另件之安排上容許有 所不同，但所選用之實施例，則於本說明書中，予以詳細 說明，並於附圖中展示其構造。 【實施方式】 請參閱第1圖至第17圖，圖中所示者為本發明所選 用之實施例結構，此僅供說明之用，在專利申請上並不受 此種結構之限制。 本實施例之梳狀共面波導接地面缺陷結構，如第1圖 所不’其係於一介電材質或半導體材料製成之基板1上設 置二接地面1 1、1 2與一導線1 3，且各接地面1 1、 1 2與該導線1 3之間分別具有一間隙G。而各接地面1 200832806 1、2對稱設有至少一缺陷結構2，各缺陷結構2包含有 二以上平行併列之導溝21，各導溝21之間係由一連接 槽2 2相連通，於本實施例中各一缺陷結構2均具有七條 導溝2 1，而該連接槽2 2係連接於各導溝2 1之中段位 置處，且連接槽2 2與間隙G相通並成垂直相交接觸，進 而使間隙G與各導溝2 1成平行設置；於本實施例中，並 將間隙G至導溝2 1間之距離定義為中央間隙寬度Ha。 由本發明之缺陷結構2係包括了數條導溝21，各導 溝2 1之間再以連接槽2 2相連通，使得連接槽2 2與間 隙G成垂直相交接觸，讓整個缺陷結構2呈多分支之結構 形態，本發明之梳狀共面波導接地面缺陷結構對應電容、 電感、電阻的等效電路模型如第2圖所示，比較本發明與 先前技術之等效電路即可明確得知，本發明之梳狀共面波 導接地面缺陷結構，在獲得相同特徵阻抗之前提，可有效 地縮小缺陷結構之面積。 經本發明人之研究發現，當對缺陷結構各部份之尺寸 調變時，會影響等效電路之電路特性。茲將本發明之缺陷 結構進行全波電磁模擬，並揭示對電路特性之影響情況。 而為便於說明茲對本發明之缺陷結構進一定義各部份之尺 寸名稱，請參閱第1圖，其中併列之各導溝2 1間之距離 定義為總長度D，各導溝2 1之長度Η，且該連接槽2 2 200832806 之高度H g，連接槽22之寬度為Wa，各導溝2 1之總寬 度為W。 請參閱第3圖，其係本發明之缺陷結構其總寬度W = 3. 0 πππ ’ a = 0 · 3 nun ’ H a = 1 · 5 πππ之全波^吴擬與專效電路 所得之S參數比較圖，值圖，由圖中可得知全波模擬與等 效電路的特性一致，其中之S η是本發明之返回損耗（ return loss) ; S 21 是本發明之插入損耗（insertion loss )° 第4圖係改變總寬度（W)之參數表，其中L、C為其 等效的電感、電容值，第4a、4b圖為單一元件改變整體總 寬度（W)之Sn、S214波模擬、電容值、電感值比較圖 。由其中可見隨著總寬度（W)的增加，共振頻率（>)會隨之 變小，而等效電感值（L)亦出現變大的現象，這個現象讓我 們發現整體總寬度（W)對電容與電感值皆有明顯影響。所 以我們如果要得到較低頻的共振頻率，可以增加整體總寬 度（W)。 第5圖為改變寬度Wa其各項參數其中L，C為其等效 的電感、電容值，第5a、5b圖為單一元件改變寬度Wa之 SI 1、S21全波模擬、電容值、電感值比較圖隨著Wa的增 加，共振頻率隨之變大，等效的電感值明顯變大許多，最 小與最大值幾乎是2倍，等效的電容值有變小的趨勢。故 200832806 我們如果要得到較大的共振頻率，最快且最方便的做法是 增加整體Wa寬度。 第6圖為改變Η其各項參數其中L，C為其等效的電感 、電容值，第6a、6b圖為單一元件改變七根上下間隙長度 Η之Sll、S21全波模擬、電容值、電感值比較圖，對上 下間距長度Η來說，增加間隙長度Η，共振頻率變化幾乎 是在100MHz左右，對等效的電感值變化不大，且對等效 的電容值亦變化不大，就整個電路特性表現來說改變上下 間距長度Η，並沒有增加梳狀共面波導接地面缺陷結構之 慢波效應。 第7圖為改變Ha其各項參數，第7a、7b圖為單一元 件改變上下寬度Ha之S11、S21全波模擬、電容值、電感 值比較圖其中L，C為其等效的電感、電容值，隨著Ha的 增加，共振頻率隨之變小，等效的電感值明顯變大許多， 等效的電容值有變小的趨勢。故我們如果要得到較小的共 振頻率，最快且最方便的做法是增加Ha寬度。故我們如 果要得到較小的共振頻率，最快且最方便的做法是增加Ha 寬度，因為共面波導的接地平面較有彈性，且增加共平面 波導接地面的寬度，較不會影響整體電路的特性。 接著，是針對單位元件串接個數對週期性結構的影響 作討論與分析，接下是探討改變單位元件尺寸對週期性結 200832806 構的影響，最後則是週期性結構的元件間距d對共振頻率 的影響。 當單位元件共振頻率為4 GHz，將串接的單位元件個 數由1個單位元件增加至4個，如第8圖所示。而梳狀共 面波導接地面缺陷結構元件共振頻率4 GHz串接個數參數 表，如第9圖。 該單位元件長度d為單位梳狀共面波導接地面缺陷結 構之W加上無負載傳輸線長度，是否會影響禁帶特性。而 單位元件長度d，是否會影響單位元件之間不連續效應， 造成阻抗不匹配，所形成之多重反射與透射。因此對於單 位元件長度d之差異，會在整個電路特性上反映，利用上 述之梳狀共面波導接地面缺陷共振頻率4 GHz結構，做串 接數為4個，不同單位元件長度d，做整體週期性結構特 性之影響分析。週期性梳狀共面波導接地面缺陷結構之共 振頻率為4. 0 GHz，串接數皆為4個，改變單位元件長度 d參數表，如第10圖。 經由前面的分析單位元件的個數與單位元件長度d， 對週期性結構電路的影響後，接下來將會使用不同的梳狀 共面波導接地面缺陷結構尺寸，產生不同共振頻率的單位 元件，做串接4個單位元件之週期性電路，來討論不同的 共振頻率，對相同串接數與相同單位元件長度，探討此時 (5 ) 11 200832806 所組成的週期性電路效能的影響；設計單位元件長度皆為 8. 0 mm，串接的單位元件個數固定為4個，其中尺寸大小 的設計參數如第11圖。 第12圖與第13圖為第9圖之Case A全波模擬比較 結果，發現禁帶的插入損耗會因此而增加，而且其損耗程 度也會急速的下降，這是因為當電路串接較多的單位元件 時，電路隨著串接單位元件個數的增加，會增加不連續面 的效果，與不同的反射路徑與反射的程度，反射波與透射 波在電路中傳播，會經過較多次的不連續面，因此產生較 多次的多重反射，使得電磁波不易由輸入端傳送至輸出端 ，因而造成有較大的插入損耗。 第12圖為單位元件串接個數對反射損耗的影響，發現 S11於禁帶低頻處與串接個數並無有所影響，但高頻處因 串接個數增加而愈趨陡峭，而在通帶發現S11會有突然變 大的情形發生，形成一種S11彈跳的圖形，而且彈跳的個 數會與單位元件個數一樣，這是因為單位元件形成的等效 電感，造成頻率響應產生同樣個數的頻率響應零點。 經由上面的討論，可知當串接單位元件個數不同時， 對禁帶的S21影響為串接個數愈多其禁帶S21衰減量越 大，但禁帶的頻寬並無明顯的影響；對於通帶而言，S11會 產生與串接個數相同的彈跳圖形，但彈跳大小不會因為串BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technical field of a coplanar waveguide structure, particularly a comb-like coplanar waveguide ground fault structure capable of forming a parallel circuit of a plurality of capacitors and inductors. [Prior Art] As shown in FIG. 18, it is a schematic diagram of a conventionally used Deplaned Ground Structure for Coplanar Waveguides (DGSCPW), which is set on a substrate 80 made of a dielectric material. The two ground planes 81, 82 and a wire 83 form a comb-like coplanar waveguide structure, and each of the ground planes 8 1 , 8 2 and the wire 8 3 has a gap 8 4 , and the ground planes 8 1 and 8 2 respectively A defect structure 8 5, 8 6 is formed by etching. In the above-mentioned coplanar waveguide ground plane defect structure, when the signal is transmitted by the wire δ 3 , the defect structure 8 5 , only β 奋 : η χ , 0 ab will form an equivalent impedance load effect 0 m rfn , research I 曰 structure 8 5 The 8 6 series is in a simple shape. If the characteristic impedance value is to be increased, it is necessary to adjust the county structure (1) 8 6 visibility and south degree, and the half-heat limit of the ground plane of the coplanar waveguide structure The grounding surface 'increased the size of the defect structure 8 5, 8 6 is not the right question, but because the defect structure 8 5, 曰 has ^ b 86 can only adjust the height and width, the flexibility of the adjustable flexibility is clear, . Therefore, the aforementioned coplanar waveguide grounding 200832806 defect structure is necessary to be further improved. The inventor developed a new coplanar waveguide ground plane defect structure and proposed the national patent application No. 9 4 1 0 1 5 9 1 , in view of the effectiveness of the case to effectively reduce the defect structure area 'and obtain the required The passband/forbidden band characteristics, the leakage wave characteristics, and the slow wave characteristics are further studied for other feasible solutions. SUMMARY OF THE INVENTION The main object of the present invention is to solve the above problems and provide a comb-shaped coplanar waveguide ground plane defect structure, which is mainly provided with at least one defect structure symmetrically on each ground plane of the comb-shaped coplanar waveguide structure. Each of the defect structures includes two or more parallel guiding grooves, and each of the guiding grooves is connected by a connecting groove, and the connecting groove is in communication with the gap of the comb-like coplanar waveguide structure, so that the comb-shaped coplanar waveguide structure has its own Resonance characteristics, and form the equivalent circuit of most capacitors and inductors in parallel, and can effectively reduce the defect structure area before the same characteristic impedance, and obtain the required passband-stopband characteristic. Leaky-wave characteristic and slow-wave characteristic 0 The second object of the present invention is to adjust the total width and total length of the defect structure, the width of the guide groove, and The height of the connecting slot can be changed to change the resonant frequency, capacitance value, and inductance 200832806 of the entire comb-shaped coplanar waveguide structure. Leaky wave frequency and the center frequency of the band gap, and can enhance its activity spirit adjustment. For the purpose of the foregoing, the present invention comprises a comb-shaped coplanar waveguide structure composed of two ground planes and a wire disposed between the two ground planes, and each ground plane has a gap between the conductors and the wires; The ground symmetry is provided with at least one defect structure, each defect structure comprises two or more parallel guiding grooves, each guiding groove is connected by a connecting groove, and the connecting groove is connected with the gap, and the above and other Aims and advantages will be apparent from the detailed description of the embodiments of the invention described below and the accompanying drawings. Of course, the invention may be varied on certain components, or in the arrangement of the components, but the selected embodiments are described in detail in the specification and their construction is shown in the drawings. [Embodiment] Please refer to Fig. 1 to Fig. 17, which shows the structure of the embodiment selected for the present invention, which is for illustrative purposes only and is not limited by this structure in the patent application. The comb-shaped coplanar waveguide grounding surface defect structure of this embodiment, as shown in FIG. 1 , is disposed on a substrate 1 made of a dielectric material or a semiconductor material, and is provided with two ground planes 1 1 , 1 2 and a wire 1 3, and each of the ground planes 1 1 and 1 2 and the conductor 13 have a gap G therebetween. Each of the ground planes 1 200832806 1 and 2 is symmetrically provided with at least one defect structure 2, and each of the defect structures 2 includes two or more parallel guide grooves 21, and each of the guide grooves 21 is connected by a connection groove 2 2 . In the embodiment, each of the defect structures 2 has seven guiding grooves 2 1 , and the connecting grooves 2 2 are connected to the middle of each guiding groove 2 1 , and the connecting grooves 2 2 are in communication with the gap G and are in vertical intersecting contact. Further, the gap G is disposed in parallel with each of the guide grooves 21; in the present embodiment, the distance between the gap G and the guide groove 21 is defined as the center gap width Ha. The defective structure 2 of the present invention includes a plurality of guiding grooves 21, and the guiding grooves 2 1 are connected by the connecting grooves 22, so that the connecting grooves 2 2 are in perpendicular contact with the gap G, so that the entire defect structure 2 is The structure of the multi-branch structure, the equivalent circuit model of the comb-shaped coplanar waveguide grounding surface defect structure corresponding to the capacitance, the inductance and the resistance of the present invention is as shown in FIG. 2, and the equivalent circuit of the present invention and the prior art can be clearly defined. It is known that the comb-shaped coplanar waveguide ground plane defect structure of the present invention can effectively reduce the area of the defect structure before obtaining the same characteristic impedance. According to the study by the inventors, when the size of each part of the defect structure is modulated, the circuit characteristics of the equivalent circuit are affected. The defect structure of the present invention is subjected to full-wave electromagnetic simulation and reveals the influence on the circuit characteristics. For the convenience of description, the size of each part is defined in the defect structure of the present invention. Please refer to FIG. 1 , wherein the distance between each of the guiding grooves 2 1 is defined as the total length D, and the length of each guiding groove 2 1 And the height H g of the connecting groove 2 2 200832806, the width of the connecting groove 22 is Wa, and the total width of each guiding groove 21 is W. Please refer to FIG. 3, which is a defect structure of the present invention whose total width W = 3. 0 πππ ' a = 0 · 3 nun ' H a = 1 · 5 πππ full wave ^ Wu and the circuit obtained by the special circuit Parameter comparison chart, value map, it can be seen from the figure that the full wave simulation is consistent with the characteristics of the equivalent circuit, wherein S η is the return loss of the present invention; S 21 is the insertion loss of the present invention (insertion loss) ) Fig. 4 is a parameter table for changing the total width (W), where L and C are equivalent inductance and capacitance values, and pictures 4a and 4b are Sn and S214 waves in which a single element changes the overall total width (W). Comparison of analog, capacitance and inductance values. It can be seen that as the total width (W) increases, the resonance frequency (>) becomes smaller, and the equivalent inductance value (L) also becomes larger. This phenomenon allows us to find the overall total width (W). ) has a significant impact on both capacitance and inductance values. So if we want to get a lower frequency resonant frequency, we can increase the overall total width (W). Figure 5 shows the variation of the width Wa and its parameters. L, C is the equivalent inductance and capacitance value. The 5a and 5b are SI 1 and S21 full-wave analog, capacitance and inductance values of a single component changing width Wa. As the value of Wa increases, the resonance frequency increases, and the equivalent inductance value becomes much larger. The minimum and maximum values are almost doubled, and the equivalent capacitance value tends to become smaller. Therefore, 200832806, the fastest and most convenient way to get a larger resonant frequency is to increase the overall Wa width. Figure 6 shows the changes in the parameters of L, C, which are equivalent to the inductance and capacitance. The 6a and 6b diagrams show the Sll and S21 full-wave simulations and capacitance values of a single component changing seven upper and lower gap lengths. Inductance value comparison chart, for the upper and lower spacing length Η, increase the gap length Η, the resonance frequency changes almost at around 100MHz, the equivalent inductance value does not change much, and the equivalent capacitance value does not change much, The entire circuit characteristic shows that the upper and lower pitch lengths are changed, and the slow wave effect of the comb structure of the comb-shaped coplanar waveguide ground plane is not increased. Figure 7 shows the parameters of changing Ha. The 7a and 7b diagrams show the S11 and S21 full-wave simulations, capacitance values and inductance values of a single component changing the upper and lower widths Ha. L, C is its equivalent inductance and capacitance. As the value of Ha increases, the resonance frequency becomes smaller, the equivalent inductance value becomes much larger, and the equivalent capacitance value tends to become smaller. Therefore, if we want to get a small resonance frequency, the fastest and most convenient way is to increase the Ha width. Therefore, if we want to get a smaller resonant frequency, the fastest and most convenient way is to increase the Ha width, because the ground plane of the coplanar waveguide is more flexible, and increase the width of the ground plane of the coplanar waveguide, which will not affect the overall circuit. Characteristics. Then, it discusses and analyzes the influence of the serial number of unit components on the periodic structure. The next step is to discuss the effect of changing the size of the unit component on the periodic junction 200832806 structure. Finally, the component spacing of the periodic structure is d to the resonance. The effect of frequency. When the unit element resonance frequency is 4 GHz, the number of unit elements connected in series is increased from one unit element to four, as shown in Fig. 8. The comb-shaped coplanar waveguide ground plane defect structure element resonance frequency 4 GHz serial number parameter table, as shown in Fig. 9. The unit element length d is the unit of the comb-like coplanar waveguide ground plane defect structure plus the length of the unloaded transmission line, whether it will affect the forbidden band characteristics. Whether the unit element length d affects the discontinuous effect between the unit elements, resulting in impedance mismatch, multiple reflections and transmissions. Therefore, for the difference in the length d of the unit element, it will be reflected in the whole circuit characteristics. With the above-mentioned comb-shaped coplanar waveguide grounding surface defect resonant frequency 4 GHz structure, the number of serial connections is 4, and the length of different unit elements is d. Analysis of the impact of periodic structural characteristics. The resonant frequency of the periodic comb-shaped coplanar waveguide ground plane defect structure is 4. 0 GHz, and the number of series connections is four, and the unit element length is changed. d parameter table, as shown in FIG. After the influence of the number of units of the previous analysis unit and the length d of the unit element on the periodic structure circuit, different comb-shaped coplanar waveguide ground plane defect structure sizes will be used to generate unit elements of different resonance frequencies. Do the serial circuit of 4 unit components in series to discuss different resonant frequencies. For the same serial number and the same unit length, discuss the effect of periodic circuit performance composed of (5) 11 200832806; design unit The length of the components is 8. 0 mm, and the number of unit components connected in series is fixed to four, and the design parameters of the size are as shown in Fig. 11. Figure 12 and Figure 13 show the result of the Case A full-wave simulation in Figure 9. It is found that the insertion loss of the forbidden band will increase, and the degree of loss will decrease rapidly. This is because the circuit is connected in series. When the unit component is used, the circuit increases the effect of the discontinuous surface as the number of connected unit components increases. The degree of reflection and the degree of reflection, the reflected wave and the transmitted wave propagate in the circuit, will pass through several times. The discontinuous surface thus produces multiple multiple reflections, making electromagnetic waves less likely to be transmitted from the input to the output, thus causing greater insertion loss. Figure 12 shows the effect of the number of serial connected components on the reflection loss. It is found that S11 has no effect on the low frequency and the number of serial connections, but the high frequency is steeper due to the increase in the number of series connections. In the passband, it is found that S11 will suddenly become larger, forming a pattern of S11 bounce, and the number of bounces will be the same as the number of unit components. This is because the equivalent inductance formed by the unit components causes frequency response. The same number of frequencies respond to zero. Through the above discussion, it can be seen that when the number of serially connected unit components is different, the influence of S21 on the forbidden band is the number of series connection, and the amount of attenuation of the forbidden band S21 is larger, but the bandwidth of the forbidden band has no obvious influence; For the passband, S11 will produce the same bounce pattern as the serial number, but the bounce size will not be due to the string.
12 200832806 接個數不同而有所差異。因此對於設計者而言，若想增加 禁帶的插入損耗，可經由增加串接個數來達成。 第14圖與第15圖為第10圖之Case B為改變單位長 度d全波模擬比較圖，發現電路的禁帶下緣頻率之插入損 耗與反射損耗的變化不大，但對於電路的禁帶上緣頻率， 隨著單位長度的增加，而往低頻處偏移，這現象導致隨著 單位長度的增加，週期性電路的禁帶變小，而禁帶的中心 頻率亦變小。另外電路的禁帶上緣之插入損失，則是隨著 單位長度的增加而變的陡峭，這現象使得週期性結構電路 的禁帶與通帶更為分明。 第16圖、第17圖為第11圖之Case C不同共振頻率 單位元件串接5個單位元件的全波模擬比較結果。當改變 串接單位元件的Η與W愈大時，也就是單位梳狀共面波導 接地面缺陷結構元件自身共振頻率愈低，導致週期性結構 電路會產生較低的禁帶中心頻率，而插入損耗與反射損耗 卻變化不大，因此在相同的串接個數與相同的單位元件長 度下，單位元件的自身共振頻率會影響禁帶中心頻率的大 小，而且會隨著自身共振的大小作偏移，所以欲得到較低 的禁帶中心頻率，則單位元件需要擁有較低的自身共振頻 率做串接，也就是說加大串接梳狀共面波導接地面缺陷結 構單位元件的Η與W。 13 200832806 第16圖，發現通帶中SI 1的特性差異，由si 1量測結 果觀祭得知’當電路串接的Η與w比較小時，通帶中每個 S11的彈跳大致上皆低於-1〇 dB，呈現出較好的通帶效能 ，但隨著串接負載電路Η與w的增加，sil彈跳愈來愈大 ，電路通帶效能也隨之變差，可能的原因是串接負載電路 的不連續接面愈大，產生的不連續效應愈大，故S11效能 愈差；反之，若是串接負載電路愈小，不連續的效應會變 小，因此愈趨近為一條50殿姆傳輸線，所以造成ςιι於通 帶中有較好的效能。 第17圖，為S21在通帶中差異的比較結果，同樣可以 發現，當串接梳狀共面波導接地面缺陷結構單位元件Η與 W尺寸愈大時，S21會在通帶產生較大的漣波，之所以會產 生漣波的原因，也是因為電路不連續效應所造成的，其致 能與通帶中S11的效能是相對的，當S11圖形彈跳起來表 示，電磁波於通帶中反射量增加，相對的也代表S21效能 的變差。而S11圖形彈跳的個數，如之前所分析會與串接 網路個數一樣，多個反射，造成通帶中產生漣波的起伏， 反射愈大連波起伏愈大。 就禁帶之衰減值大小而f ’沒有多大的差別’所以當 我們植入負載後，負載本身的共振頻率，對整體週期性電 路禁帶中心頻率的影響，為最密切的關係。 14 200832806 以上所述實施例之揭示係用以說明本發明，並非用以 限制本發明，故舉凡數值之變更或等效元件之置換仍應隸 屬本發明之範疇。 由以上詳細說明，可使熟知本項技藝者明瞭本發明的 確可達成前述目的，實已符合專利法之規定，爰提出專利 申請。 【圖式簡單說明】 第1圖係本發明之結構示意圖 第2圖係本發明之等效電路模型 第3圖係梳狀共面波導接地面缺陷結構單一元件羚3. Omm ，Fa=0. 3mm，· 5mm模擬與等效電路所得之51參 數比較圖 第4圖係梳狀共面波導接地面缺陷結構單一元件改變整體 寬度F參數表 第4 a圖係梳狀共面波導接地面缺陷結構一元件改變整體 寬度昃遂57/與义7之全波模擬圖 第4 b圖係梳狀共面波導接地面缺陷結構單一元件改變整 體寬度F浚之電容值與電感值之示意圖 第5圖係梳狀共面波導接地面缺陷結構單一元件改變中央 間隙寬度物之參數表 第5 a圖梳狀共面波導接地面缺陷結構單一元件改變整體 15 200832806 寬度Fa浚57/與沿7之全波模擬圖 第5 b圖係梳狀共面波導接地面缺陷結構單一元件改變敫 體寬度Fa遂之電容值與電感值之示意圖 炎正 第6圖梳狀共面波導接地面缺陷結構單一元件改變七根上 下間距長度#之參數表 第6 a圖係梳狀共面波導接地面缺陷結構單一元件改變整 體長度及遂57/與公7全波模擬圖 第6 b圖係梳狀共面波導接地面缺陷結構單一元件改變敕 體長度及遣之電谷值與電感值之示意圖 第7圖係梳狀共面波導接地面缺陷結構單一元件改變中央 間距寬度你之參數表 ' 第7 a圖係梳狀共面波導接地面缺陷結構單一元件改變整 體見度#a遂57/與沿7全波模擬圖 第7 b圖係梳狀共面波導接地面缺陷結構單一元件改變整 體長度你遂之電容值與電感值之示意圖 正 第8圖係梳狀共面波導接地面缺陷週期性結構單一元件串 接之結構示意圖 第9圖係梳狀共面波導接地面缺陷週期性結構單一元件共 振頻率/0=4 GHz結構，改變串接個數之參數表 第1 0圖係梳狀共面波導接地面缺陷週期性結構之單位元 件共振頻率/〇=4.0GHZ結構，串接數4個，改變單 16 c S ) 200832806 位元件長度^/之參數表 第1 1圖係梳狀共面波導接地面缺_期性結構單位元件 不同共振頻率，串接4個單位元件，單位長度㈣0 mm之參數表 · 第1 2圖係梳狀共面波導接地面缺陷週期性結構如同第8 =WeA單位元件共振頻率4肩版串接個數 67/之模擬結果 第13圖係梳狀共面波導接地面缺陷週期性結構如同第8 圖―6 A單位元件共振頻率4.00 GHz串接個數 公7之模擬結果 第14圖係梳狀共面波導接地面缺陷週期性結構如同第9 圖Case B共振頻率4肩GHz串接5個數單位元 /件單位元件不同長度^之奶模擬結果 第1 5圖雜狀共面波導接地面缺_期性結構如同第9 圖CaSe B共振頻率4.00 GHz串接5個數單位元 卜 件單位元件不同長度Θ之奶模擬結果 第1 6圖係;狀共面波導接地面缺陷如同第1 〇圖case匸 串接5個數單位元件單位元件長度（“ 8. 〇咖）不 同共振頻率67/模擬結果 第1 7圖係週期性梳狀共面波導接地面缺陷結構如同第工 0圖Case C串接5個數單位元件單位元件長度（j (S ) 17 200832806 =8. 0 mm)不同共振頻率公7模擬結果 第1 8圖係習用之梳狀共面波導接地面缺陷結構示意圖 【圖號說明】 (習用部分） 基板8 0 接地面8 1、8 2 導線8 3 缺陷結構8 5、8 6 (本發明部分） 間隙8 4 基板1 接地面11、12 導線1 3 缺陷結構2、4 導溝2 1 連接槽2 2 間隙G 總長度D 導溝之總寬度為W 連接槽之寬度為Wa 導溝之長度Η 中央間隙寬度Ha 連接槽高度Hg 1812 200832806 The number varies depending on the number. Therefore, if the designer wants to increase the insertion loss of the forbidden band, it can be achieved by increasing the number of serial connections. Figure 14 and Figure 15 show that Case B in Figure 10 is a full-wave analog comparison diagram for changing the unit length d. It is found that the insertion loss and the reflection loss of the lower edge frequency of the forbidden band of the circuit do not change much, but for the forbidden band of the circuit. The upper edge frequency, as the unit length increases, shifts to the low frequency. This phenomenon causes the band gap of the periodic circuit to become smaller as the unit length increases, and the center frequency of the forbidden band also becomes smaller. In addition, the insertion loss of the upper edge of the forbidden band of the circuit becomes steep as the unit length increases, which makes the forbidden band and the pass band of the periodic structure circuit more distinct. Fig. 16 and Fig. 17 are full-wave analog comparison results of different resonance frequencies of Case C in Fig. 11 in which five unit elements are connected in series. When the Η and W of the serial unit component are changed, that is, the lower the resonance frequency of the unit comb-shaped coplanar waveguide ground plane defect structure element, the periodic structure circuit generates a lower forbidden band center frequency, and the insertion Loss and reflection loss do not change much. Therefore, under the same number of serial connections and the same unit element length, the self-resonance frequency of the unit element will affect the center frequency of the forbidden band, and it will be biased according to the size of its own resonance. Shift, so to get a lower center frequency of the forbidden band, the unit component needs to have a lower self-resonant frequency for serial connection, that is, to increase the Η and W of the unit component of the concatenated comb-shaped coplanar waveguide ground plane defect structure. 13 200832806 Figure 16 shows the difference in characteristics of SI 1 in the passband. It is known from the si 1 measurement result that 'when the circuit is connected to the Η and w, the bounce of each S11 in the passband is generally low. At -1〇dB, it shows better passband performance. However, as the tandem load circuit increases and w increases, the silo jumps more and more, and the circuit passband performance also deteriorates. The possible cause is string. The larger the discontinuous junction of the load circuit, the larger the discontinuity effect, so the S11 performance is worse. Conversely, if the serial connection load circuit is smaller, the discontinuous effect will become smaller, so the closer to a 50 The temple transmission line, so that ςιι has a better performance in the passband. Fig. 17 is a comparison result of the difference in the pass band of S21. It can also be found that when the tantalum coplanar waveguide ground plane defect structure unit element Η and W size are larger, S21 will generate a larger in the pass band. The reason why chopping, the reason why chopping occurs, is also caused by the discontinuous effect of the circuit, and its enabling is opposite to the performance of S11 in the passband. When the S11 figure bounces, the amount of electromagnetic wave reflected in the passband Increase, the relative also represents the deterioration of S21 performance. The number of S11 graphics bounces, as previously analyzed, will be the same as the number of serially connected networks. Multiple reflections cause ripples in the passband, and the greater the reflection, the greater the fluctuation of the Dalian wave. As for the magnitude of the attenuation of the forbidden band and f ’ there is not much difference, so when we implant the load, the resonance frequency of the load itself has the closest relationship to the center frequency of the global periodic band gap. The above description of the embodiments is intended to be illustrative of the invention and is not intended to limit the scope of the invention. From the above detailed description, it will be apparent to those skilled in the art that the present invention can achieve the above-mentioned objects, and is in accordance with the provisions of the Patent Law. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of the structure of the present invention. Fig. 2 is an equivalent circuit model of the present invention. Fig. 3 is a comb-like coplanar waveguide grounding surface defect structure single element antelope 3. Omm, Fa=0. 3mm, · 5mm simulation and equivalent circuit obtained 51 parameter comparison diagram Fig. 4 is comb-like coplanar waveguide ground plane defect structure single element change overall width F parameter table 4a picture comb coplanar waveguide ground plane defect structure A component changes the overall width 昃遂57/ and the full-wave simulation of the 7th figure. Figure 4b is a comb-like coplanar waveguide grounding surface defect structure. A single component changes the overall width F浚. The capacitance value and the inductance value are shown in Fig. 5 Comb-like coplanar waveguide ground plane defect structure Single element change central gap width parameter table 5a Figure comb-like coplanar waveguide ground plane defect structure single element change overall 15 200832806 Width Fa浚57/ and full-wave simulation along 7 Figure 5b is a comb-like coplanar waveguide grounding surface defect structure Single element changing the capacitance value and the inductance value of the body width Fa遂. Figure 6 Comb coplanar waveguide grounding surface defect structure Single element change seven The parameter table of the upper and lower spacing length #6a is the comb-like coplanar waveguide grounding surface defect structure single element changes the overall length and 遂57/ and the public 7 full wave simulation diagram 6b is the comb-like coplanar waveguide grounding surface defect Schematic diagram of a single element changing the length of the body and the electric valley value and the inductance value. Figure 7 is a comb-like coplanar waveguide grounding surface defect structure Single element changing the center spacing width Your parameter table '7a a series comb Face waveguide ground plane defect structure single component change overall visibility #a遂57/ with 7 full wave simulation diagram 7b diagram comb coplanar waveguide ground plane defect structure single component change overall length your capacitance value and inductance Fig. 8 is a comb-like coplanar waveguide ground plane defect periodic structure single element series connection structure diagram Fig. 9 is a comb-like coplanar waveguide ground plane defect periodic structure single element resonance frequency / 0 = 4 GHz Structure, change the number of serially connected parameter table. Figure 10 is a comb-like coplanar waveguide grounding surface defect periodic structure unit element resonance frequency / 〇 = 4.0 GHZ structure, number of series 4, change single 16 c S ) 200832806 Bit element length ^ / parameter table Figure 1 1 comb-like coplanar waveguide ground plane missing _ phase structure unit element different resonance frequency, serially connected 4 unit components, unit length (four) 0 mm parameter table · Figure 1 2 The comb-like coplanar waveguide ground plane defect periodic structure is like the 8th = WeA unit element resonance frequency 4 shoulder plate serial number 67 / simulation result 13th figure comb-like coplanar waveguide ground plane defect periodic structure as the first 8 Figure-6 A A unit component resonance frequency 4.00 GHz serial connection number of 7 simulation results Figure 14 is a comb-like coplanar waveguide ground plane defect periodic structure as shown in Figure 9 Case B resonance frequency 4 shoulder GHz series 5 Number of unit elements / piece unit components of different lengths ^ milk simulation results Figure 15 Figure 5 miscellaneous coplanar waveguide grounding surface lack _ phase structure as shown in Figure 9 CaSe B resonance frequency 4.00 GHz serially 5 number of units The simulation results of the different lengths of the components are shown in Fig. 16. The coplanar waveguide grounding surface defects are the same as the first one. The case is connected in series with 5 number of unit components. (" 8. Coffee" different resonance frequencies 67/ Simulation results, Figure 17 is a periodic comb coplanar wave The ground plane defect structure is the same as the work 0. Case C is connected in series with 5 number unit components. The unit length (j (S ) 17 200832806 = 8. 0 mm) is different from the resonance frequency. Schematic diagram of the coplanar waveguide grounding surface defect structure [Illustration number] (conventional part) Substrate 8 0 Ground plane 8 1 , 8 2 Conductor 8 3 Defective structure 8 5, 8 6 (part of the invention) Clearance 8 4 Substrate 1 Ground plane 11 12 conductor 1 3 defective structure 2, 4 guide groove 2 1 connecting groove 2 2 gap G total length D total width of guide groove is W width of connecting groove is length of guide groove Η central gap width Ha connecting groove height Hg 18