CN112490612A

CN112490612A - Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide

Info

Publication number: CN112490612A
Application number: CN202011199862.3A
Authority: CN
Inventors: 冯团辉; 王利敏
Original assignee: Xuchang University
Current assignee: Xuchang University
Priority date: 2020-11-02
Filing date: 2020-11-02
Publication date: 2021-03-12
Anticipated expiration: 2040-11-02
Also published as: CN112490612B

Abstract

The invention discloses a single-negative metamaterial heterojunction loaded with slits on two sides based on coplanar waveguides, which comprises the coplanar waveguides, a chip capacitor, a chip inductor and the slits; a slit is periodically carved on the left half section of the central conduction band of the coplanar waveguide, a chip capacitor crosses the slit, and the left end and the right end of the chip capacitor are communicated with the central conduction band of the coplanar waveguide through soldering tin to form a magnetic single negative metamaterial; the right half section of the coplanar waveguide is periodically and symmetrically loaded with the chip inductors, each chip inductor spans a gap between a central conduction band of the coplanar waveguide and the ground plate, and two ends of each chip inductor are respectively communicated with the central conduction band of the coplanar waveguide and the ground plate through soldering tin to form the single negative metamaterial; two slits are carved on the central guide belt of the coplanar waveguide on two sides of the single-negative metamaterial heterojunction. The sub-wavelength resonant cavity formed by the single-negative metamaterial heterojunction based on the coplanar waveguide and loaded with the slits on the two sides can also have a higher quality factor when the length is shorter.

Description

Single-negative metamaterial heterojunction with slits loaded on two sides based on coplanar waveguide

Technical Field

The invention relates to the field of metamaterials, in particular to a single-negative metamaterial heterojunction based on coplanar waveguides and provided with slits loaded on two sides.

Background

Microwave resonators are an important microwave component and have a wide range of applications in microwave technology. In order to miniaturize the device or for some special applications, it is often desirable to keep the resonant frequency of the cavity as constant as possible, for example, less than half a wavelength or less. In order to solve the problem, documents "Tuanhui Feng, Hongpei Han, Limin Wang, Fei Yang, Feiyun Zhang, A new method of simulating single organic metals based on planar waveguide [ J ], Journal of Materials Science: Materials in Electronics, 2018,29(14): 11886-11891" propose a subwavelength resonator which can break through the half wavelength limit, the length of the coplanar waveguide based resonator is independent of the resonance frequency, and the length of the resonator can be made long or short under the condition of ensuring that the resonance frequency is not changed, thereby being able to be less than half wavelength or shorter. The sub-wavelength resonant cavity is realized by a heterojunction consisting of an electric single negative metamaterial and a magnetic single negative metamaterial. However, the resonant cavity based on the single-negative metamaterial heterojunction has the disadvantage that the quality factor of the resonant cavity is lower when the length of the resonant cavity is shorter. The quality factor is an important characteristic parameter of the resonant cavity, and in many cases, the resonant cavity is expected to have a higher quality factor. Therefore, the sub-wavelength resonant cavity based on coplanar waveguide proposed in the prior art, namely the documents "Tuanhui Feng, Hongpei Han, Limin Wang, Fei Yang, Feiyun Zhang, A new method of simulating single connecting Materials based on planar waveguide [ J ], Journal of Materials Science: Materials in Electronics, 2018,29(14): 11886 + 11891", has defects (lower quality factor when the length of the resonant cavity is shorter) and needs to be improved.

Disclosure of Invention

The invention aims to solve the technical problem of enhancing the quality factor of a shorter-length subwavelength resonant cavity consisting of a single-negative metamaterial heterojunction based on coplanar waveguides, thereby realizing a novel subwavelength resonant cavity based on coplanar waveguides and having a higher quality factor when the length is shorter.

In order to achieve the purpose, the invention adopts the following technical scheme: a single-negative metamaterial heterojunction loaded with slits on two sides based on a coplanar waveguide comprises the coplanar waveguide, a chip capacitor, a chip inductor and the slits;

a slit is periodically carved on the left half section of the central conduction band of the coplanar waveguide, the chip capacitor crosses over the slit, and the left end and the right end of the chip capacitor are communicated with the central conduction band of the coplanar waveguide through soldering tin to form a magnetic single negative metamaterial;

loading the chip inductors periodically and symmetrically (about a central conduction band of the coplanar waveguide) in the right half section of the coplanar waveguide, wherein each chip inductor spans a gap between the central conduction band of the coplanar waveguide and a grounding plate of the coplanar waveguide, and two ends of each chip inductor are respectively communicated with the central conduction band of the coplanar waveguide and the grounding plate of the coplanar waveguide through soldering tin to form an electrical single negative metamaterial;

two slits are respectively carved on the left side of the magnetic single negative metamaterial and the right side of the electric single negative metamaterial on the central guide belt of the coplanar waveguide, the slit on the left side of the magnetic single negative metamaterial is closely adjacent to the magnetic single negative metamaterial at no interval, and the slit on the right side of the electric single negative metamaterial is closely adjacent to the electric single negative metamaterial at no interval.

Preferably, the coplanar waveguide is implemented using a single-sided printed circuit board, i.e., the coplanar waveguide has no copper cladding on its back side.

Compared with the prior art, the beneficial effect is that by adopting the scheme, the sub-wavelength resonant cavity formed by the single negative metamaterial heterojunction based on the coplanar waveguide and loaded with the slits on the two sides has a higher quality factor when the length is shorter, so that the defect of the prior art is overcome, namely the sub-wavelength resonant cavity formed by the single negative metamaterial heterojunction based on the coplanar waveguide has a lower quality factor when the length is shorter.

Drawings

FIG. 1 is a schematic structural diagram of one embodiment of the present invention;

fig. 2 is a comparison of the transmission characteristic curves of the single-negative metamaterial heterojunction based on coplanar waveguide and with slits loaded on two sides and a single-negative metamaterial heterojunction based on coplanar waveguide.

Detailed Description

In order to facilitate an understanding of the invention, the invention is described in more detail below with reference to the accompanying drawings and specific examples. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "through-going," "left," "right," and the like as used herein are for descriptive purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

As shown in fig. 1, according to an embodiment of the present invention, the single-negative metamaterial heterojunction based on coplanar waveguide and loaded with slits on two sides includes a coplanar waveguide 1, a patch capacitor 2, a patch inductor 3, and a slit 9;

a slit 5 is periodically carved on the left half section of a central conduction band 4 of the coplanar waveguide 1, the chip capacitor 2 crosses over the slit 5, and the left end and the right end of the chip capacitor are communicated with the central conduction band 4 of the coplanar waveguide 1 through soldering tin, so that a magnetic single negative metamaterial 6 is formed;

the chip inductors 3 are periodically and symmetrically loaded (about the central conduction band of the coplanar waveguide) on the right half section of the coplanar waveguide 1, each chip inductor 3 spans a gap between the central conduction band 4 of the coplanar waveguide and the ground plate 7 of the coplanar waveguide, and two ends of each chip inductor are respectively communicated with the central conduction band 4 of the coplanar waveguide and the ground plate 7 of the coplanar waveguide through soldering tin, so that an electric single negative metamaterial 8 is formed, and further the electric single negative metamaterial and the magnetic single negative metamaterial 6 on the left side form a heterojunction structure;

two slits 9 are respectively carved on the left side of the magnetic single negative metamaterial 6 and the right side of the electric single negative metamaterial 8 on the central conduction band 4 of the coplanar waveguide, the slit on the left side of the magnetic single negative metamaterial 6 is closely adjacent to the magnetic single negative metamaterial 6 at intervals, and the slit on the right side of the electric single negative metamaterial 8 is closely adjacent to the electric single negative metamaterial 8 at intervals.

According to the technical scheme provided by the invention, a sample is designed, the sample adopts a single-sided printed circuit board with the dielectric constant of 4.75 and the thickness of a dielectric plate of 1.6mm, the width of a central conduction band of a coplanar waveguide is 4.5 mm, and the width of a gap between the central conduction band of the coplanar waveguide and a grounding plate of the coplanar waveguide is 0.52 mm. For the left magnetic single negative metamaterial, the value of the loaded patch capacitor is 1.8 pF, the length of one unit (namely the length of a coplanar waveguide central conduction band occupied by one patch capacitor or the distance between the centers of two adjacent patch capacitors) is 4mm, and the whole magnetic single negative metamaterial comprises two units; for the right single negative metamaterial, the value of the loaded patch inductor is 12 nH, the length of one unit (namely the length of the coplanar waveguide central conduction band occupied by two patch inductors which are symmetrical to each other relative to the coplanar waveguide central conduction band) is also 4mm, and the whole single negative metamaterial also comprises two units. The widths of two slits on two sides of the heterojunction formed by the magnetic single negative metamaterial and the electric single negative metamaterial are both 0.3 mm.

Fig. 2(b) shows the transmission characteristic curve of the designed sample, and fig. 2(a) shows the transmission characteristic curve of a pure heterojunction composed of a magnetic single negative metamaterial and an electric single negative metamaterial (i.e. the slits on both sides of the heterojunction composed of two single negative metamaterials in the sample are removed). Comparing fig. 2(a) and 2(b), it can be seen that when two slits are added on both sides of the heterojunction composed of two single negative metamaterials, a large improvement in the quality factor can be achieved. Therefore, the technical scheme of the invention can realize a novel subwavelength resonant cavity based on the coplanar waveguide, which has a higher quality factor when the length is shorter.

The technical features mentioned above are combined with each other to form various embodiments which are not listed above, and all of them are regarded as the scope of the present invention described in the specification; also, modifications and variations may be suggested to those skilled in the art in light of the above teachings, and it is intended to cover all such modifications and variations as fall within the true spirit and scope of the invention as defined by the appended claims.

Claims

1. A single-negative metamaterial heterojunction loaded with slits on two sides based on a coplanar waveguide is characterized by comprising the coplanar waveguide, a chip capacitor, a chip inductor and the slits;

the chip inductors are periodically and symmetrically loaded on the right half section of the coplanar waveguide, each chip inductor spans a gap between a central conduction band of the coplanar waveguide and a grounding plate of the coplanar waveguide, and two ends of each chip inductor are respectively communicated with the central conduction band of the coplanar waveguide and the grounding plate of the coplanar waveguide through soldering tin to form an electrical single negative metamaterial;

2. The single-negative metamaterial heterojunction based on slots loaded on two sides of coplanar waveguide as claimed in claim 1, wherein the coplanar waveguide is implemented with a single-sided printed circuit board, i.e. the coplanar waveguide is free of copper cladding on the back side.

3. The coplanar waveguide-based single negative metamaterial heterojunction with slot loading on both sides as claimed in claim 1, wherein the periodically loaded patch inductors on the right half section of coplanar waveguide are symmetric with respect to the horizontal center line of the coplanar waveguide central conduction band.