TW200832750A - Light-emitting diode and method for manufacturing the same - Google Patents

Abstract

A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises an illuminant epitaxial structure, a transparent conductive layer, a first conductivity type electrode and a second conductivity type electrode, wherein the first conductivity type is different from the second conductivity type. The illuminant epitaxial structure comprises a first conductivity type semiconductor layer deposed on a substrate, an active layer stacked on a portion of the first conductivity type semiconductor layer to expose another portion of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer stacked on the active layer. The transparent conductive layer comprises a first transparent conductive film and a second transparent conductive film stacked in sequence, wherein a grain size of the first transparent conductive film is greater than a grain size of the second transparent conductive film. The first conductivity type electrode is deposed on the exposed portion of the first conductivity type semiconductor layer. The second conductivity type electrode is deposed on the transparent conductive layer.

Description

200832750: Description of the nine t-lang

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a light-emitting element, and more particularly to a light-emitting diode (LED) and a method of fabricating the same. [Prior Art] In the conventional gallium nitride series light-emitting diodes, a thin metal film such as nickel/gold (Ni/Au) is used as a transparent solution between the light-emitting epitaxial structure and the electrodes. The electric layer promotes current spreading, thereby improving the luminous efficiency of the light emitting diode element. However, although the thickness of the metal thin film is thin enough to allow light to pass through, the transmittance is still less than 70% for visible light, and the luminance of the light-emitting element is lowered. In addition, after the nickel/gold film is formed, it must be tempered in an oxygen-containing atmosphere to obtain a nickel/gold conductive film having high transparency and low contact resistance. However, when the nickel/gold film is tempered in an oxygen-containing atmosphere, oxidation occurs, and the oxidized nickel/gold film is easily deteriorated by water-oxygen attack, which deteriorates the element characteristics. In order to solve the problem of water and oxygen erosion, the nickel/gold film is usually covered with a protective layer of ruthenium dioxide to block external moisture and prevent water and oxygen from invading the nickel/gold film, thereby improving component reliability and extending component life. . However, the thermal conductivity of the ceria protective layer is poor, so that after the package of the LED component is completed, the protective layer becomes a barrier structure for heat conduction, which is disadvantageous for the conduction of heat generated by the active layer, thereby causing the light-emitting diode. The heat dissipation performance of the components is degraded. On the other hand, in order to solve the low light transmittance of 5,200832750 caused by the use of a metal thin film as a transparent conductive layer, a transparent conductive layer 1 having a thin film of indium tin oxide as a light-emitting diode has been developed. The resistivity of the indium tin oxide film is significantly higher than that of the metal film, which may cause current clogging (cc plus Crowding) phenomenon, which causes rapid degradation of the local region of the electrode, resulting in reduced reliability and shortened lifetime of the LED component. . SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a light emitting diode having a transparent conductive layer comprising at least two transparent conductive films, wherein the upper transparent conductive film has a grain size smaller than that of the transparent ray The film, so the transparent conductive layer has a relatively good, anti-water gas intrusion # ability, and can improve the operational reliability of the light-emitting diode component, 3 extend the life of the elemental diode component. Another object of the present invention is to the right: ^ ^ 疋 疋 扼 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 一种 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼 扼Therefore, the process complexity can be reduced, the yield can be improved, the manufacturing cost can be reduced, and the heat dissipation performance of the LED component can be improved. Another object of the present invention is to provide a method for manufacturing a light-emitting diode by first growing a low-resistivity transparent conductive film by using a non-electric f: method, and then growing the structure on a low-resistivity transparent conductive film. In addition, the transparent conductive gentleman can not only improve the contact quality of the transparent conductive layer and the underlying stray structure, but also effectively isolate the moisture, which can improve the performance of the LED component and can be greatly increased. The lifetime of the light-emitting diode component. According to the above object of the present invention, a light-emitting diode is provided, wherein at least a semiconductor structure is disposed on a substrate, wherein the light-emitting amorphous structure is at least a second semiconductor layer on the substrate; an active layer is stacked on the substrate 200832750 a part of the conductor T, and exposing the first electrical semiconductor layer two electrical semiconductor layer, stacked on the active layer, the electrical semiconductor layer and the second electrical semiconductor layer (four) electrical; a month through the electricity layer At least including sequentially stacking on the luminescent crystal structure

== and a second transparent conductive film, wherein the crystal of the first transparent conductive film: the size is larger than the grain size of the second dielectric film; the second portion of the H electrical semiconductor layer; and a second electrode is provided On the second floor.

According to a preferred embodiment of the present invention, the materials of the first and second transparent conductive films are the same. A material of a transparent conductive film According to another preferred embodiment of the present invention, the first conductive film is an electron beam germanium plating film, and the second conductive film is a sputtering film. According to an object of the present invention, a method for fabricating a light emitting diode is provided, comprising at least: forming a light emitting crystal structure on a substrate, wherein the light emitting crystal structure to t comprises a first electrical semiconductor stacked on the substrate in sequence a layer, an active layer, and a first electrical semiconductor layer, wherein the first electrical semiconductor layer and the second electrical

The semiconductor layer has different electrical properties; removing part of the second electrical semiconductor layer and the active layer until a portion of the first electrical semiconductor layer is exposed; forming a transparent conductive layer 'where the transparent I electrical layer comprises at least sequentially stacked a first transparent conductive film and a second transparent conductive film on the light-emitting structure, and a grain size of the first transparent conductive film is larger than a grain size of the second transparent conductive film; forming a first electrode at the first electrical property An exposed portion of the semiconductor layer; and a second electrode formed on the transparent conductive layer. According to the ", the month, the preferred embodiment", the V-form which forms the first transparent conductive film is subjected to electron beam evaporation, and the step of forming the second transparent conductive film is 200832750 by sputtering. MODES OF THE INVENTION The present invention discloses a light-emitting diode and a method for fabricating the same, which utilizes at least two-stage process to produce a transparent snow-guided lacquer...a transparent conductive layer having a low electrical resistivity and a high tooth permeability. It can provide good electrical contact characteristics, and can effectively prevent external water and oxygen intrusion, further extend the service life of the light-emitting diode components, and improve the light-emitting diode components.

The purpose of J's sin. In order to make the description of the present invention more detailed and complete, the following description can be referred to and cooperated with! Figure to Figure 4B. At present, in order to improve the problem of poor transmittance of the transparent conductive layer composed of the metal thin ruthenium, the indium tin oxide layer is mostly used as the transparent conductive layer. However, when it was found that the indium tin oxide layer was used as the transparent conductive layer, the life and reliability of the light-emitting diode element were not effectively improved. In addition to the current effect of the Quaysei effect, Zhongshui also found that the indium tin oxide layer prepared by electron beam evaporation technology has a low structure density, so that the external water oxygen is easily invaded, resulting in a light-emitting diode element. The rate of degradation increases. In order to avoid moisture intrusion, an additional layer of ruthenium dioxide protective layer on the indium antimonide tin layer can also improve the reliability of the light-emitting diode element and effectively extend the service life of the element. However, covering the indium tin oxide layer with the ceria protective layer also has the effect of blocking the heat conduction generated by the active layer, which is unfavorable for the heat dissipation performance of the light-emitting diode. In addition, in such a light-emitting diode structure, a germanium-doped cerium oxide layer is required as a protective layer, and this high-quality cerium oxide is generally subjected to electro-chemical vapor deposition (Plasma Enhanced CVD; PECVD). ) Making it private. Therefore, the indium tin oxide layer and the ceria layer 200832750 need to be produced separately in different instruments and equipment, so that not only will the process cost increase, but also the yield drop. In view of the above, the present invention provides a light-emitting diode and a method for fabricating the same, which are used to fabricate at least two transparent conductive oxide layers in at least two different processes as a transparent conductive layer to enhance the transparent conductive layer and the amorphous structure. The ohmic contact characteristic improves the density of the layer structure on the transparent conductive layer, thereby effectively preventing the external water and oxygen from invading, thereby improving the operational reliability of the LED component and the service life of the extension member, and eliminating the need for additional protection. Floor. Referring to Figures 1 through 3, there is shown a process cross-sectional view of a light-emitting diode in accordance with a preferred embodiment of the present invention. The light-emitting diode of the present invention may be a GaN-based light-emitting diode or a scalar aluminum gallium indium (LED) light-emitting diode. In the exemplary embodiment, the substrate 100' is first acclaimed. The material of the substrate 100 may be, for example, sapphire, tantalum carbide, gallium nitride or aluminum nitride. Next, the nucleation layer 102 can be selectively deposited on the surface of the substrate 100 in accordance with actual process requirements. In another embodiment of the present invention, the subsequent epitaxial material layer can be directly fabricated without first growing into a core layer. Next, the luminescent epitaxial structure i i 0 is epitaxially grown on the nucleation layer 102 above the substrate 1 by, for example, organometallic chemical vapor deposition (M0CVD). The light emitting epitaxial structure 110 includes at least a first electrical semiconductor layer 1 and a second active layer 106, wherein the first electrical semiconductor layer 104 is located on the nucleation layer 1〇2 above the substrate 1〇〇. The active layer 'Μ is stacked on the first electrical semiconductor layer 104, and the second electrical half layer 108 is stacked on the active layer 1〇6. The first electrical semiconductor layer ι 4 and the second: electrical semiconductor layer 108 have different electrical properties. For example, when the first electrical property is N-type, the second electrical property is P-type; and when the first electrical property is p-type, the electrical property of the i 9 200832750 is Ν-type. In the exemplary embodiment, the _th electrical property is _ _ two electrical property is 1> type. In addition, the material of the first electrical semiconductor layer i〇4 is, for example, a phosphating inscription of a lanthanum-doped gallium nitride-based material, and the material of the second electrical semiconductor layer 108 can be, for example, Magnesium doped = Gallium series: material or magnesium doped phosphide aluminum gallium indium material. The active layer i〇6 is preferably a Multiquantum Well (MQW) structure, such as a nitrogen (tetra) gallium/gallium gallium (InuGaojN/GaN) multiple quantum well structure. After the illuminating epitaxial structure 110 is completed, the pattern definition of the luminescent crystal structure m is performed by using, for example, lithography and etching, and the second portion of the semiconductor layer 108 and the active layer 1G6 are removed until the exposed portion is exposed. A portion 112' of the electric semiconductor layer U) 4 is brought into contact with the electrode-disk semi-conductive bell layer 1G4 which is subsequently formed. In the pattern definition process of the illuminating crystal structure (10), in order to ensure that the first electric semiconductor layer 104 is exposed after the pattern definition, a means of averaging (0ver_etching) is usually employed. As a result, in the pattern defining step, a portion of the first electrical half 104 is also removed, as shown in FIG.曰Φ Next, the transparent conductive layer 12A may be formed directly on the second electrical semiconductor layer 108 of the luminescent epitaxial structure 〇1; or the contact layer 114 may be selectively formed on the second electrical semiconductor layer 108. Then, the transparent conductive layer 120 is formed on the contact layer 114. Of course, the contact layer 114 may be formed on the second electrical semiconductor 〇8, and then the lithography and etching methods are used to define the pattern of the luminescent epitaxial structure. In the present exemplary embodiment, the contact layer 114 is first formed on the second electrical semiconductor layer 1 8 by, for example, an organometallic chemical vapor deposition method. The contact layer 114 is preferably a doped superlattice stress layer structure.

Layei: Supetlattiees ; SLS). The conductivity can be improved because of the superior contact characteristics between the superlattice stress layer structure and the transparent conductive layer 120 formed in the subsequent 10 200832750. Next, a pattern of the light-emitting epitaxial structure is defined by lithography and etching, and a transparent conductive layer 120 is formed on the contact layer 114. When the transparent conductive layer 120 is formed, at least two transparent conductive films can be formed by using at least two processes to form the transparent conductive layer 120. First, using non-plasma deposition techniques for contact

A transparent conductive film 116 is formed on the layer 114 to prevent the plasma from damaging the surface of the contact layer 114, thereby affecting the electrical contact quality of the transparent conductive layer 120 and the contact layer 114. The transparent conductive film 116 has a portion of a predetermined thickness of the transparent conductive layer 120. The material of the transparent conductive film 116 can be, for example, Indium Tin Oxide (ITO), Cadmium Tin Oxide (CTO), Zinc Oxide (IZO), and Al-doped Oxide (Zn〇: Ai). Gallium-doped zinc oxide (ZnO:Ga), indium-doped zinc oxide (ZnO:In), boron-doped oxidation (ZnO:B), oxidized gallium (ZnGa2〇4), doped yttrium Tin oxide (Sn〇2:Sb), tin-doped gallium oxide (Ga2〇3:Sn), tin-doped silver indium oxide (AgInOySn), zinc-doped indium oxide (In2〇3:Zn), oxidation Copper aluminum (CuA1〇2), beryllium oxysulfide (1^11〇3), nickel oxide (0), copper gallium oxide (CuGaO) or yttrium copper oxide (SrCu2〇2). Next, another transparent conductive film 118 is formed on the transparent conductive film 116, wherein the transparent conductive film 118 has a thickness of another portion of the transparent conductive layer 12 and the total thickness of the transparent conductive film 116 combined with the transparent conductive film 118 is The predetermined thickness of the transparent conductive members 20 is as shown in FIG. Since the transparent conductive film 116 has been formed first, the process technology that can be selected when the transparent conductive film 118 is provided with the transparent conductive film 116 is widely used. The material of the transparent conductive film 118 can be, for example, indium tin oxide, oxidized recording tin, oxidized word 11 200832750 tin, doped zinc oxide, oxygen ^ ^ , ^ JA 铱 铱 铱 , , , , , anchor

Emulsified gallium, doped silk and u ^ m M ^ in silver indium' doped zinc indium oxide, sodium oxide knob copper oxysulfide, 4 each emulsified copper chain, emulsified nickel, copper oxide gallium Or bismuth oxide steel. Due to the use of electron φ $ #别别瘵 plating process to prepare transparent conductive film, π & girls plasma, and can prevent + snow will be the layman / film will not produce, ^ ^ plasma damage prepared for deposition of the structural surface And the #*, the system has a low resistivity characteristic. However, the electronic conductive film for the transparent conductive film prepared by the electric + beam 瘵 plating process has a large grain size. The other two are slaves, that is, the transparent conductive film JL is right. 'The sputtering process is made by the UI. The size of the U is small, and even the A is not prepared. In the Wang 4 Ma non-Japanese structure, it can be entered. Therefore, in a better warning such as &, water rolling intrusion ... "", the electron beam evaporation process can be used before the nozzle I Making transparent guide lightning ^ Μ No conductive film system ^ Dan published a transparent conductive film 118 on the transparent process using a sputtering process. That is, a two-layer one electron beam evaporation film is formed, and the transparent conductive layer and the V tail film are a sputter film. Please refer to the 4A and 4B drawings at the same time, in which 'Taiwan’s painful tears, the 4D picture of the younger brothers, the transparent conductive film prepared by the Qiang method, the scanning electron microscope (SEM) of the pancreas 'And the 4B plan is based on electronic anthrax.... 知 暄 卢 以 以 以 以 以 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明Make-up tablets. Using the scanning magnification of 50,000 times, the surface of the conductive film is quite flat, and the surface of the conductive film is quite flat and is measured by the "spraying method". through

Boundary). On the other hand, the transparent conductive film which has been prepared by the J-month*4, such as the λλα ^ ^ 田$ electron micro-mirror, is observed at a magnification of 30,000 households. The structure density of the transparent conductive film prepared by the method of the key mode is indeed much higher than that of the transparent conductive film prepared by the beam evaporation method. Electricity 12 200832750 In the exemplary embodiment, the same material can be used, and the film 116 and the transparent conductive film can be used, and the same material is used, so that the light passes through different 铋J. w Π7 Fresnel loss generated by the 枓 layer interface, thereby increasing the light and thickness m 〇 first take-out rate. In addition, the transparency of the transparent conductive film ι16 is smaller than that of the transparent guide 11/: r, but the thickness of the transparent conductive film 11 亦可 can also be equal to or greater than the thickness of the transparent conductive film 118. The invention is not limited thereto. Because, in the preparation of the transparent conductive layer 120, the low resistivity is first formed by, for example, electron beam evaporation = non-electropolymerization, but the crystal grains are large and the structure density is low: transparent: conductive 16' A transparent conductive film 118 having an amorphous or grain structure and a high density of structure is formed by sputtering. Therefore, the transparent conductive layer ii6 and the transparent conductive film ii8 have the same transparent contact, and the layer 120 not only provides a good electrical contact with the contact f 114 , but also effectively prevents external water and oxygen from invading. And the transparent conductive layer 12 itself can have an excellent electrical quality. Moreover, due to the high density of the structure of the transparent conductive film 118, the external water and oxygen can be effectively prevented from entering, because the protective layer can be additionally disposed on the transparent layer 120, thereby reducing the overall process. After that, the 'durability' greatly increases the process yield, and the protection layer can be prevented from affecting the conduction and dissipation of heat generated when the active layer 106 operates. After the fabrication of the transparent conductive layer 120 is completed, the electrode 122 is formed on a portion of the transparent conductive layer 120 by a technique such as vapor deposition. At the same time, the electrode 124 is formed on a portion of the exposed portion 112 of the first electrical semiconductor layer 1 4 by a technique such as a zipper, and the fabrication of the illuminating diode 126 is completed, as shown in Fig. 3. According to the preferred embodiment of the present invention, one of the advantages of the present invention is that the transparent conductive layer of the light-emitting diode of the present invention includes at least two transparent films, wherein the density of the transparent conductive film above is higher than that of the lower layer. Transparent guide film 'Therefore, the transparent conductive layer has excellent resistance to water and gas erosion, which can improve the operational reliability of the diode component and extend the LED component.

The life of the brother. T From the above preferred embodiment of the present invention, another advantage of the present invention is that since the transparent conductive layer of the light-emitting diode of the present invention has a dense upper layer structure, there is no need to additionally provide a dioxide protective layer. Therefore, the process complexity can be reduced and the yield can be improved, and the manufacturing cost can be reduced, and the heat dissipation performance of the illuminating element can be improved. According to the preferred embodiment of the present invention, the advantage of the present invention is that the manufacturing method of the light-emitting diode of the present invention is to grow a low-resistivity transparent conductive film by a non-plasma method, and then to have a low resistivity. Another transparent conductive film having a dense structure grown on the transparent conductive film. Therefore, not only the transparent conductive layer itself has good electrical quality, but also improves the ohmic contact quality of the transparent conductive layer and the underlying structure, and can effectively insulate moisture intrusion, thereby improving illuminance, operation performance of the polar body component and Reliability and greatly increase the life of the LED components. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is intended that various modifications may be made without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 to FIG. 3 are cross-sectional views showing a process of a light-emitting diode of 200832750 according to a preferred embodiment of the present invention. The transparent conductive material prepared by the scanning method of the prepared transparent conductive film is shown in Fig. 4A as a photomicrograph prepared by sputtering. The 4B picture shows a scanning electron microscope photograph of the electron beam vapor film. [Description of main component symbols] 100 substrate 104 first conductive conductor 108 second electrical semiconductor 112 portion 116 transparent conductive film 120 transparent conductive layer 124 electrode 102: nucleation layer 106: active layer 110: light emitting crystal structure 114: contact layer 118: transparent conductive film 122: electrode 126: light emitting diode 15

Claims (1)

200832750: Ten:,, the scope of application A light-emitting diode comprising at least: a light-emitting epitaxial structure disposed on a substrate, wherein the light-emitting epitaxial structure comprises at least: a first electrical semiconductor layer on the substrate; _ an active layer And stacking on a first portion of the first electrical semiconductor layer and exposing a second portion of the first electrical semiconductor layer; and a second electrical semiconductor layer stacked on the active layer Wherein the first electrical semiconductor layer and the second electrical semiconductor layer have different electrical properties; d Λ-. I ^ \ K field, a % rn pt «xL· % 一逍明导% layer 'main 7 g imitation The first transparent conductive film and the second transparent conductive film are referred to as a first transparent conductive film, wherein a grain size of the first transparent conductive film is larger than a grain size of the second transparent conductive film a first electrode disposed on the second portion of the first electrical semiconductor layer; and φ - a second electrode disposed on the transparent conductive layer. 2. The light-emitting diode according to claim 1, wherein the light-emitting diode system is a gallium nitride-based light-emitting diode. 3. The light-emitting diode according to claim 1, wherein the light-emitting diode system is an aluminum gallium indium phosphate light-emitting diode. 4. The light-emitting diode of claim 1, wherein the material of the 16 200832750 substrate is selected from the group consisting of sapphire. The ruthenium carbide, the gallium nitride, and the aluminum nitride 5, the light-emitting diode according to claim 1, further comprising at least a nucleation layer between the surface of the substrate and the first electrical semiconductor layer 0 〆6·If you please patent scope 帛! The light-emitting diode according to the item, wherein the ®-electroconductive semiconductor layer is (4), and the second electrical semiconductor layer is p-type. The light-emitting diode according to claim 1, wherein the material of the first electrical semiconductor layer is an antimony-doped tantalum nitride series material or a germanium-doped phosphating | g gallium indium material. . 8. The light-emitting diode according to claim 1, wherein the material of the second electrical semiconductor layer is a magnesium-doped gallium nitride series material or a carbon-doped aluminum gallium indium phosphate material. 9. The light-emitting diode of claim 1, wherein the active layer is a multiple quantum well structure. 10. The illuminating 'one pole body according to claim 9 of the patent application scope, wherein the active layer is an indium gallium nitride/gallium nitride (In❹jGauN/GaN) multiple quantum well structure. 17 200832750 η· as claimed in the scope of the i-th item, including a contact layer between the second electrical, the light-emitting one, at least the 暄 斗 + conductor layer and the first, Thai. Mouth between the membranes. Transparent Conductive Electrode 12······························································ 1 13th, as claimed in the patent application, the material of the first transparent conductive film and the light-emitting diode described in the item, and the material of the middle transparent conductive film of the same 14. The material of the Jth transparent conductive film of the patent application is different from the material of the light-emitting diode and the transparent conductive film of the above-mentioned item. The light-emitting diode according to the first aspect of the invention, wherein the first one of the first conductive film is an electron beam evaporation film, wherein the light-emitting diode according to the first aspect of the invention is The material of the vapor-permeable membrane is selected from the group consisting of indium tin oxide (Ιτ〇), tin oxide (CTO), zinc tin oxide (IZ〇), aluminum-doped zinc oxide (6) 〇: Αΐ), doped Zinc oxide (Zn〇:Ga), indium-doped zinc oxide (Ζη〇:ΐη), doped oxidized (ΖηΟ.Β), oxidized gallium (ZnGa2〇4), doped tin oxide ( Sn02.Sb), tin-doped gallium oxide (Ga2〇3:Sn), tin-doped silver indium oxide 18 200832750 (AgIn〇2:Sn), zinc-doped indium oxide (In2〇3:Zn), A group consisting of copper oxide (CuAl〇2), beryllium oxysulfide (LaCu〇s), nickel oxide (Ni〇), copper gallium oxide (CuGa〇2), and beryllium copper (SrCU2〇2). 18. The light-emitting diode according to claim i, wherein the material of the second transparent conductive film is selected from the group consisting of indium tin oxide, cadmium tin oxide, oxygen zinc, tin, and doped aluminum. Oxidation, gallium-doped zinc oxide, doped indium oxide, boron-doped zinc oxide, zinc gallium oxide, antimony-doped tin oxide, tin-doped gallium oxide, tin-doped silver oxide indium The group of zinc-doped indium oxide, copper aluminum oxide, beryllium copper oxysulfide, nickel oxide, copper oxide gallium, and copper oxide. The method for manufacturing a light-emitting diode includes at least a substrate for forming a light-emitting amorphous structure, wherein the light-emitting amorphous structure includes at least a first-electro-semiconductor layer, a main = and a layer sequentially stacked on the substrate An ith electrical semiconductor layer, wherein the first electrical semiconductor layer and the electrical semiconductor layer have different electrical properties; and the first electrical semiconductor of the second electrical conductive conductor layer is removed a layer of a transparent conductive layer, wherein the transparent conductive layer comprises at least one of a first transparent conductive film and a second transparent conductive film; The younger brother forms a pair of electrodes and electrodes on the exposed portion of the first Lei-Ping, Shang, Pu, ., Dielectric + conductor layers, and 19 200832750 forms a dipole-electrode on the transparent conductive layer. 2G. The method for manufacturing a light-emitting diode according to claim 19, wherein the light-emitting diode system is a gallium nitride-based light-emitting diode. The method of manufacturing a light-emitting diode according to claim 19, wherein the light-emitting diode system is an aluminum gallium indium phosphide light-emitting diode. The method of manufacturing a light-emitting diode according to claim 19, wherein the material of the substrate is selected from the group consisting of sapphire, tantalum carbide, gallium nitride, and aluminum nitride. 23. The method of manufacturing the light-emitting diode according to claim 19, further comprising growing a nucleation layer on a surface of the substrate before the step of forming the light-emitting epitaxial structure. The invention relates to the manufacture of a light-emitting diode according to claim 1 of the invention, wherein the first electrical semiconductor layer is N-type and the second electrical semiconductor layer is P-type. 25. The manufacture of a light-emitting diode according to claim 19, wherein the material of the first electrical semiconductor layer is an antimony-doped gallium nitride-based material or a germanium-doped aluminum gallium indium phosphate material. . 26. The manufacture of a light-emitting diode according to claim 19, wherein the material of the second electrical semiconductor layer is a magnesium-doped gallium nitride series material or a magnesium-doped aluminum phosphide alloy. Gallium indium material. 27. The method of fabricating a light-emitting diode according to the scope of the patent application, wherein the active layer is a multiple quantum well structure. 28. The method of fabricating a light-emitting diode according to claim 28, wherein the active layer is an indium gallium nitride/gallium nitride (Ino.3Gao.7N/GaN) Xia weight sub-well structure. 29. The manufacture of a light-emitting diode according to claim 19 of the patent application is further characterized in that a contact layer is formed on the second electrical semiconductor layer. The method of manufacturing a light-emitting diode according to claim 29, wherein the scale layer is a superlattice stress layer structure. The method of manufacturing the light-emitting diode according to claim 19, wherein the material of the first transparent conductive film is the same as the material of the second transparent conductive film. The method of manufacturing a light-emitting diode according to claim 19, wherein the material of the first transparent conductive film is different from the second transparent material. 33. The manufacture of the light-emitting diode according to claim 19 of the patent application scope. The process of forming the first-transparent conductive film is performed by an electric forging method, which is described in item 9 of the patent scope. The step of manufacturing the light-emitting diode to the step of forming the second transparent conductive film utilizes a sputtering method. The invention discloses a method for manufacturing a light-emitting diode according to item 9 of the patent scope, wherein the material of the transparent conductive film is selected from indium tin oxide, tin-plated tin: zinc tin oxide, and doped Oxidation, oxidation of gallium-doped, zinc oxide with indium, zinc oxide with boron, zinc gallium oxide, tin oxide doped with antimony, oxygen-doped zirconium with tin doping A group of indium, copper oxide, copper oxysulfide, nickel oxide, copper oxide gallium and oxidation method consisting of tin-doped silver-tin oxide-doped zinc-doped copper oxide 36 2: ΐ patent scope The manufacture of the light-emitting diode described in item 19 is vaporized. The material of the transparent conductive film is selected from the group consisting of indium tin oxide, tin-plated, zinc-zinc oxide, zinc-doped zinc oxide, and gallium-doped. Zinc Oxide, Oxidation of Dioxide, Rubbing, Oxidation, Oxidation, Oxygen, Tin-doped Gallium Oxide, Tin-Doped Silver Indium Oxide, Zinc-Doped Oxidation: Copper Oxide , a group of strontium oxysulfide, antimony oxide, copper oxide gallium and oxidation copper. twenty two