CN107785467A - Light emitting element - Google Patents
Light emitting element Download PDFInfo
- Publication number
- CN107785467A CN107785467A CN201710590005.8A CN201710590005A CN107785467A CN 107785467 A CN107785467 A CN 107785467A CN 201710590005 A CN201710590005 A CN 201710590005A CN 107785467 A CN107785467 A CN 107785467A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- semiconductor
- emitting component
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 92
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 17
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 17
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 5
- 229960004643 cupric oxide Drugs 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 229910000428 cobalt oxide Inorganic materials 0.000 claims 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 1
- 238000003475 lamination Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 173
- 239000000463 material Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- -1 nickel oxide (NiO) Chemical class 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- SIQZJFKTROUNPI-UHFFFAOYSA-N 1-(hydroxymethyl)-5,5-dimethylhydantoin Chemical compound CC1(C)N(CO)C(=O)NC1=O SIQZJFKTROUNPI-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 244000283207 Indigofera tinctoria Species 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting element, which comprises a semiconductor lamination layer, a first semiconductor layer, a second semiconductor layer and an active layer capable of emitting UV light, wherein the active layer is positioned between the first semiconductor layer and the second semiconductor layer; a first layer over the second semiconductor layer, the first layer comprising a metal oxide; and a second layer disposed on the first layer, the second layer comprising graphene, wherein the first layer is entirely covered on the second semiconductor layer, and the first layer comprises a thickness less than 10 nm.
Description
Technical field
The present invention relates to a kind of light-emitting component, and more particularly to a kind of light-emitting component, its include semiconductor lamination and
One conductive layer is located on semiconductor laminated.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is solid semiconductor illuminating element, and its advantage is power consumption
Low, caused heat energy is low, and long working life is shockproof, small volume, and reaction speed is fast and has good photoelectric characteristic, such as surely
Fixed emission wavelength.Therefore light emitting diode is widely used in household electrical appliance, equipment indicating lamp, and photovoltaic etc..
The content of the invention
The present invention disclose a kind of light-emitting component, and it has one first semiconductor layer comprising semiconductor lamination, and one the second half
Conductor layer, and one can send the active layer of UV light between the first semiconductor layer and the second semiconductor layer；One first layer position
In the second semiconductor layer, first layer includes metal oxide；And one the second layer be located on first layer, the second layer includes
Graphene, wherein first layer are that whole face is covered in the second semiconductor layer, and first layer includes a thickness and is less than 10 nanometers.
Invention additionally discloses a kind of method for manufacturing a light-emitting component, and it, which is included, provides semiconductor lamination, and semiconductor is folded
There is layer one first semiconductor layer, one second semiconductor layer, and an active layer that can send UV light to be located at the first semiconductor layer
And second between semiconductor layer；Form a first layer and include metal oxide in the second semiconductor layer, first layer；And shape
Into a second layer on first layer, the second layer includes graphene, wherein first layer be whole face be covered in the second semiconductor layer it
On, first layer includes a thickness and is less than 10 nanometers.
Brief description of the drawings
Fig. 1 is the schematic diagram of the manufacture method of the light-emitting component 1 disclosed in one embodiment of the invention；
Fig. 2 is the schematic diagram of the manufacture method of the light-emitting component 1 disclosed in one embodiment of the invention；
Fig. 3 is the schematic diagram of the structure of the light-emitting component 1 disclosed in one embodiment of the invention；
Fig. 4 is the schematic diagram of the structure of the light-emitting device 2 disclosed in one embodiment of the invention；
Fig. 5 is the schematic diagram of the structure of the light-emitting device 3 disclosed in one embodiment of the invention.
Symbol description
1 light-emitting component
2,3 light-emitting devices
55 supporting layers
10 substrates
20 is semiconductor laminated
21 first semiconductor layers
22 second semiconductor layers
23 active layers
30 first electrodes
40 second electrodes
50 conductive layers
51 first layers
52 second layers
70 package substrates
500 carriers
711 first pads
712 second pads
700 insulation divisions
74 catoptric arrangements
602 lampshades
604 speculums
606 supporting parts
608 luminescence units
610 light emitting modules
612 lamp sockets
60 insulating barriers
614 fin
616 connecting portions
Embodiment
In order that the narration of the present invention it is more detailed with it is complete, refer to the description of the following example and coordinate related attached
Figure.But embodiment described below is illustrative for the light-emitting component of the present invention, not limits the invention to following reality
Apply example.Also, the size for the constituent part that this specification is recorded in embodiment, material, shape, relative configuration etc. are not limiting
Write, the scope of the present invention is not limited to this, and is only simple explanation.And the size of component shown in each accompanying drawing
Or position relationship etc., can be due in order to clearly state the situation exaggerated.More and, in the following description, in order to appropriate
Detailed description will be omitted, shown for same or connatural component same name, symbol.
Fig. 1~Fig. 3 is the manufacture method of the light-emitting component 1 disclosed in one embodiment of the invention.
As shown in FIG. 1 to 3, the manufacture method of light-emitting component 1, which includes, provides a substrate 10；Form semiconductor lamination 20
In on substrate 10, wherein semiconductor laminated 20 include one first semiconductor layer 21, one second semiconductor layer 22, and an active layer
23 between the first semiconductor layer 21 and the second semiconductor layer 22；A first layer 51 is formed on semiconductor laminated 20；There is provided
One carrier 500；A second layer 52 is formed on carrier 500；A supporting layer 55 is formed on the second layer 52；Remove carrier 500；Connect
Close the second layer 52 and in first layer 51 and remove supporting layer 55；A first electrode 30 is formed on the first semiconductor layer 21 and one second
Electrode 40 is on the second semiconductor layer 22；And formed an insulating barrier 60 with cover semiconductor laminated 20 and/or first electrode 30,
On one surface of second electrode 40.
In one embodiment of this invention, there is provided substrate 10 is with as a growth substrate, including to phosphatization gallium aluminium of growing up
GaAs (GaAs) chip of indium (AlGaInP), or it is precious to the indigo plant of InGaN of growing up (InGaN), aluminium gallium nitride alloy (AlGaN)
Stone (Al2O3) chip, gallium nitride (GaN) chip or carborundum (SiC) chip.
In one embodiment of this invention, Metalorganic chemical vapor deposition method (MOCVD), molecular beam epitaxy are passed through
(MBE), hydride vapor phase epitaxy method (HVPE), physical vaporous deposition (PVD) or ion plating method are to form with photoelectricity
Semiconductor laminated the 20 of characteristic are on substrate 10, such as luminous (light-emitting) lamination, wherein physical vapor deposition method
Include sputter (Sputtering) or evaporation (Evoaporation) method.First semiconductor layer 21 and the second semiconductor layer 22, can
For clad (cladding layer) or limiting layer (confinement layer), both have different conductivities, electricity
Property, polarity, or according to the element of doping to provide electronics or hole, such as the first semiconductor layer 21 is the electrical semiconductor of n-type, the
Two semiconductor layers 22 are the electrical semiconductor of p-type.Active layer 23 formed the first semiconductor layer 21 and the second semiconductor layer 22 it
Between, electronics and hole are compound in active layer 23 under electric current driving, luminous energy are converted electric energy to, to send a light.Pass through
Change physics and the chemical composition of one or more layers in semiconductor laminated 20 to adjust the wavelength that light-emitting component 1 emits beam.Half
The material of conductor lamination 20 includes III-V race's semi-conducting material, such as AlxInyGa(1-x-y)N or AlxInyGa(1-x-y)P, wherein 0
≤ x, y≤1；(x+y)≤1.
In one embodiment of this invention, can when the material of active layer 23 is AlGaN series or AlInGaN series materials
Send ultraviolet light (UV) of the wavelength between 400nm and 250nm.Active layer 23 can be single heterojunction structure (single
Heterostructure, SH), double-heterostructure (double heterostructure, DH), bilateral double-heterostructure
(double-side double heterostructure, DDH), multi-layer quantum well structure (multi-quantum well,
MQW).The material of active layer 23 can be semiconductor neutral, that p-type or n-type are electrical.
In one embodiment of this invention, PVD aluminium nitride (AlN) is formed between semiconductor laminated 20 and substrate 10, PVD
Aluminium nitride (AlN) can be as cushion, to improve semiconductor laminated 20 extension quality.In one embodiment, being formed
The target of PVD aluminium nitride (AlN) is made up of aluminium nitride.In another embodiment, it is using the target being made up of aluminium, in nitrogen
In the environment of source aluminium nitride is formed with aluminium target reactivity.
In one embodiment of this invention, as shown in figure 1, placing the carrier 500 with a thickness first in a horizontal stove
In pipe, hydrogen is passed through in an inert atmosphere and is heated to more than 800 DEG C to remove the native oxide on the surface of carrier 500, then is led to
Enter carbon containing source of the gas to form the second layer 52 on the surface of carrier 500, being finally passed through inert gas acceleration cooling boiler tube, make stove
Pipe takes out the carrier 500 formed with the second layer 52 after being down to room temperature, then provides a supporting layer 55 to be covered on the second layer 52
On surface, and remove carrier 500.Specifically, selecting a such as copper foil, copper foil thickness itself is 25 μm as carrier 500, will
Copper foil is positioned in a horizontal boiler tube, is passed through 10sccm hydrogen under argon (Ar) compression ring border and is heated to 900 DEG C to remove copper foil
The native oxide on surface, then the carbon containing sources of the gas of 5sccm are passed through, such as methane, to form the second layer 52, such as graphene,
On the surface of copper foil, finally it is passed through 100sccm argon gas and accelerates cooling boiler tube, boiler tube is taken out after being down to room temperature formed with graphene
Copper foil, followed by heat remove adhesive tape (thermal release tape) as supporting layer 55, be covered on graphene
Surface on, and be dipped to ferric trichloride (FeCl3) in solution, to etch removal copper foil.
In one embodiment of this invention, carrier 500 includes metal material, as a metal solvent to grow graphene,
Carrier 500 can be a flexible substrate, and the shape of carrier 500 is unlimited, includes rectangle or circle.
In one embodiment of this invention, supporting layer 55 includes high polymer material, such as polymethyl acrylate (poly
Methyl methacrylate, PMMA).The thickness of supporting layer 55 is, for example, 10 nanometers to 2 centimetres.
In one embodiment of this invention, as shown in Fig. 2 depositing 0.1 to 5 using atomic layer chemical vapor deposition (ALD)
The metal oxide of nanometer thickness, such as nickel oxide, to form first layer 51 on semiconductor laminated 20.In the implementation of the present invention
In example, precursor is, for example, water and NiCp2, plating rate is 0.42A/cycle.In one embodiment of this invention, first layer 51
Thickness is between 0.1 to 5nm.
In one embodiment of this invention, first layer 51 is as having high-penetration rate in UV optical ranges and electric conductivity is good
Film, to increase first layer 51 UV light penetrance, it is necessary to be made into very thin film, such as thickness is received less than 10
Rice, but when film thickness is less than 10 nanometers, film can form that island is discontinuous, make the contact resistance of film increase；If
Continuous film is made, then to increase film thickness, its shortcoming is reduction film in the penetration of UV light.The one of the present invention
In embodiment, the first layer 51 for including metal oxide, 51 whole face of first layer are formed using atomic layer chemical vapor deposition (ALD)
It is completely covered by semiconductor laminated 20, there is first layer 51 thickness variation to be less than 5 nanometers, preferably 2 nanometers.
In one embodiment of this invention, as shown in Figures 1 and 2, by hot padding mode apply pressure to supporting layer 55 and add
Heat so that the second layer 52 is attached on plated first layer 51 semiconductor laminated 20, then removes supporting layer 55 to more than 130 DEG C, stays
The lower second layer 52 is on first layer 51.
In one embodiment of this invention, first electrode 30 and/or second electrode 40 can be individual layer or laminated construction.In order to
The material of reduction and semiconductor laminated 20 resistance to connect, first electrode 30 and/or second electrode 40 includes metal material, such as
Metal or the above-mentioned material such as chromium (Cr), titanium (Ti), tungsten (W), golden (Au), aluminium (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt)
Alloy.
In one embodiment of this invention, the material of first electrode 30 and/or second electrode 40, which includes, has high reflectance
Metal, such as aluminium (Al), silver-colored (Ag) or platinum (Pt).
In one embodiment of this invention, first electrode 30 and/or second electrode 40 are in contact with semiconductor laminated 20
Side includes chromium (Cr) or titanium (Ti), with increase first electrode 30 and/or second electrode 40 with semiconductor laminated 20 engagement it is strong
Degree.
In one embodiment of this invention, insulating barrier 60 is used to protect semiconductor layer not by external environment influence.Insulating barrier
60 have translucency, are formed by non-conducting material, include organic material, such as Su8, excessively benzocyclobutene (BCB), fluorine ring fourth
Alkane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), poly- methyl-prop
E pioic acid methyl ester (PMMA), PET (PET), makrolon (PC), PEI
(Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer), or inorganic material, such as silica gel
(Silicone), glass (Glass), or dielectric material, such as aluminum oxide (Al2O3), silicon nitride (SiNx), silica
(SiOx), titanium oxide (TiOx), or magnesium fluoride (MgFx)。
Disclosed in Fig. 3 is the structure of the light-emitting component 1 of one embodiment of the invention.Light-emitting component 1 is folded comprising semiconductor
There is layer 20 one first semiconductor layer 21, one second semiconductor layer 22, and an active layer 23 that can send UV light to be located at first
Between the semiconductor layer 22 of semiconductor layer 21 and second；One conductive layer 50 is located on the second semiconductor layer 22.Conductive layer 50 includes
One first layer 51 is located at is located remotely from the second semiconductor layer 22 close to the side of the second semiconductor layer 22, and a second layer 52
Side.
In one embodiment of this invention, conductive layer 50 includes multilayer, and respectively there is different materials to form a transparent electricity
Pole, such as the material of first layer 51 include metal or metal oxide, and the second layer 52 includes nonmetallic materials, such as graphene.
In one embodiment of this invention, first layer 51 includes a piece of resistance more than a piece of resistance that the second layer 52 is included
Value.In one embodiment of this invention, the second layer 52 includes piece resistance and is located at 2.1~3.9ohm/square.
In one embodiment of this invention, the semiconductor layer 22 of conductive layer 50 and second has one to be less than 10-3ohm/cm2's
Contact resistance.
In one embodiment of this invention, the second semiconductor layer 22 has p-type doping, and is more than with a doping concentration
1E+19cm-3.P-type doping includes II race's elements such as magnesium (Mg), zinc (Zn), cadmium (Cd), beryllium (Be) or calcium (Ca).
In one embodiment of this invention, the semiconductor layer 22 of first layer 51 and second forms low resistance contact, such as ohm
Contact.In one embodiment, when the second semiconductor layer 22 is gallium nitride (GaN) of p-type, the material that first layer 51 is included has
A standby work function is more than 4.5eV, is preferably located between 5~7eV, or the aluminium gallium nitride alloy that the second semiconductor layer 22 is p-type
(AlGaN) when, material that first layer 51 is included possesses a work function and is more than 4.5eV, is preferably located between 5~7eV.First layer
51 material includes metal or metal oxide, such as nickel oxide (NiO), cobalt oxide (Co3O4), cupric oxide (Cu2O)。
In one embodiment of this invention, the second semiconductor layer 22 includes AlxGa1-xN, and 0.55<x<0.65, the second half
Conductor layer 22 includes a thickness and is less than 1000 angstromsOr between 1000 angstromsAnd 250 angstromsBetween.Light-emitting component 1 includes
One contact layer (not shown) is between the second semiconductor layer 22 and first layer 51, and wherein contact layer includes GaN, and contact layer includes
One thickness, the light sent from active layer 23 can be allowed to penetrate in the contact layer real value of this thickness and form low resistance with first layer 51
Contact, such as Ohmic contact.In the present embodiment, the thickness of contact layer is less than 150 angstromsOr between 50 angstromsAnd 150
AngstromBetween, when the thickness of GaN layer is less than 100 angstromsWhen, the light of light-emitting component 1 about more than 90% can be taken out.Contact
The GaN that layer is included has p-type doping, and is more than 1*10 with a doping concentration20cm-3Or between 1*1020And 2*1020cm-3Between.
In one embodiment of this invention, the second semiconductor layer 22 includes AlxGa1-xN, light-emitting component 1 include a contact layer
For (not shown) between the second semiconductor layer 22 and first layer 51, contact layer includes AlyGa1-yN, wherein x, y>0, and x>y.
Second semiconductor layer 22 includes a thickness and is less than 1000 angstromsOr between 1000 angstromsAnd 250 angstromsBetween.Contact layer
It is less than 150 angstroms comprising a thicknessOr between 150 angstromsAnd 50 angstromsBetween.The AlGaN that contact layer is included has p
Type doping, and it is more than 1*10 with a doping concentration19cm-3Or between 1*1019And 8*1019cm-3Between.
In one embodiment of this invention, the second semiconductor layer 22 includes AlxGa1-xN, light-emitting component 1 include a contact layer
For (not shown) between the second semiconductor layer 22 and first layer 51, contact layer includes AlyGa1-yN, wherein 0.55<x<0.65,
0.05<y<0.1。
In one embodiment of this invention, the Al that contact layer is includedyGa1-yN has a p-type doping, such as magnesium (Mg),
II race's elements such as zinc (Zn), cadmium (Cd), beryllium (Be) or calcium (Ca).And preferably, 0.01≤y≤0.1.
In one embodiment of this invention, the Al that contact layer is includedyGa1-yN has p-type doping, and with a doping
Concentration is more than 1*1019cm-3Or between 1*1019And 8*1019cm-3Between.
In one embodiment of this invention, conductive layer 50 has one to be less than 10 with contact layer-3ohm/cm2Contact resistance.
In one embodiment of this invention, the metal oxide that first layer 51 is included includes a metal, and metal has more
Individual oxidation state, such as nickel oxide (NiOx) nickle atom to include one first oxidation state as+divalent and one second oxidation state be+trivalent.
In one embodiment of this invention, the metal oxide that first layer 51 is included includes a metal, and metal has single
One oxidation state.
In one embodiment of this invention, the stoichiometric proportion of the metal for the metal oxide that first layer 51 is included and oxygen
(stoichiometry) it is not equal to 1.
In one embodiment of this invention, first layer 51 includes p-type doping to reduce contact resistance.
In one embodiment of this invention, there is the metal oxide that first layer 51 is included an energy gap to be more than 3eV, preferably
More than 3.2eV, more preferably more than 3.4eV.For example, metal oxide, such as nickel oxide (NiOx), its energy gap is about 3.6~
4eV。
In one embodiment of this invention, first layer 51 is that whole face is completely covered by the second semiconductor layer 22, first
Layer 51 is less than 10 nanometers comprising a thickness, preferably less than 5 nanometers, more preferably less than 2 nanometers.First layer 51 becomes with a thickness
It is different to be less than 5 nanometers, preferably 2 nanometers.In the present embodiment, the situation of the second semiconductor layer 22 is completely covered in the first layer 51
The upper surface for referring to the second semiconductor layer 22 is entirely that first layer 51 is covered, the upper table without exposing the second semiconductor layer 22
Face.
In one embodiment of this invention, first layer 51 and or the second layer 52 have for 200~280 nanometers of wavelength
More than 80% penetration.
In one embodiment of this invention, the second layer 52 includes translucent material, such as graphene.Graphene for it is a kind of by
Carbon-carbon bond is about with the hexagonal two dimensional surface material that is formed of sp2 hybridized orbitals bond, in graphene-structured for carbon atom
0.142nm, the area about 0.052nm of hexgonal structure2, thickness in monolayer size only 0.34nm, have and be higher than 5300W/mK
Thermal conductivity factor, higher than 15000cm2/ Vs electron mobility, less than 10-6Ω cm resistivity
In one embodiment of this invention, the second layer 52 has a p-type doping, and p-type doping includes magnesium (Mg), zinc
(Zn), II race's element such as cadmium (Cd), beryllium (Be) or calcium (Ca).
In one embodiment of this invention, the second layer 52 includes multiple sublevels, such as 2~10 layers of graphene layer.
In one embodiment of this invention, graphene layer is made up of multiple units, and any one unit includes carbon atom group
Into hexagon, multiple units be connected to each other to be formed tool armchair (Armchair) structure two dimensional surface material or saw
The two dimensional surface material of flute profile (Zigzag) structure.
In one embodiment of this invention, the second layer 52 includes one or more graphene layers, each of which graphene layer tool
There is a thickness.
Fig. 4 is the schematic diagram according to the light-emitting device 2 of one embodiment of the invention.By the light-emitting component 1 in previous embodiment with
Routing is installed on the first pad 711 of package substrate 70, on the second pad 712 in the form of flip-chip.First pad
711st, it is electrically insulated between the second pad 712 by an insulation division 700 comprising insulating materials.Flip-chip installation be by with
The light that the relative growth substrate of weld pad forming face is set to main on the side takes out face.Effect is taken out in order to increase the light of light-emitting device 2
Rate, a catoptric arrangement 74 can be set around light-emitting component 1.
Fig. 5 is the schematic diagram according to the light-emitting device 3 of one embodiment of the invention.Light-emitting device 3 is that a bulb lamp includes a lamp
Cover 602, one speculum 604, a light emitting module 610, a lamp socket 612, a fin 614, a connecting portion 616 and an electrical connection
Element 618.Light emitting module 610 includes a supporting part 606, and multiple luminescence units 608 are located on supporting part 606, wherein more
Individual luminescence unit 608 can be light-emitting component 1 or light-emitting device 2 in previous embodiment.
Each embodiment cited by the present invention is not used to limit the scope of the present invention only to illustrate the present invention.It is any
People's any modification apparent easy to know made for the present invention or change are without departure from spirit and scope of the invention.
Claims (10)
1. a kind of light-emitting component, comprising：
It is semiconductor laminated, there is the first semiconductor layer, the second semiconductor layer, and can send UV light active layer be located at this first
Between semiconductor layer and second semiconductor layer；
First layer, positioned at second semiconductor layer, the first layer includes metal oxide；And
The second layer, on the first layer, the second layer includes graphene, wherein the first layer be whole face be covered in this second
Semiconductor layer, the first layer include a thickness and are less than 10 nanometers.
2. light-emitting component as claimed in claim 1, the wherein metal oxide have a work function, more than 4.5eV.
3. light-emitting component as claimed in claim 1, the wherein metal oxide have a work function, between 5eV~7eV it
Between.
4. light-emitting component as claimed in claim 1, the wherein metal oxide include nickel oxide, cupric oxide, cobalt oxide.
5. light-emitting component as claimed in claim 1, the wherein metal oxide include metal, the metal has the first oxidation state
And second oxidation state.
6. light-emitting component as claimed in claim 1, wherein the UV light include a wavelength, between 100~290 nanometers.
7. light-emitting component as claimed in claim 1, also comprising contact layer, positioned at second semiconductor layer and the first layer it
Between, wherein second semiconductor layer includes AlGaN and the contact layer includes GaN.
8. between light-emitting component as claimed in claim 6, the wherein first layer and/or the second layer and second semiconductor layer
Comprising a contact resistance, less than 10-3Ω·cm2。
9. light-emitting component as claimed in claim 1, the wherein first layer include a sheet resistance values, a piece of more than the second layer
Resistance value.
10. light-emitting component as claimed in claim 1, the wherein second layer include multiple sublevels.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105127175 | 2016-08-25 | ||
| TW105127175 | 2016-08-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107785467A true CN107785467A (en) | 2018-03-09 |
| CN107785467B CN107785467B (en) | 2021-09-07 |
Family
ID=61437475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710590005.8A Active CN107785467B (en) | 2016-08-25 | 2017-07-19 | Light emitting element |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107785467B (en) |
| TW (1) | TWI746596B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110739376A (en) * | 2019-10-23 | 2020-01-31 | 东莞市中晶半导体科技有限公司 | LED chips, display screen module and manufacturing method thereof |
| CN111668354A (en) * | 2019-03-08 | 2020-09-15 | 华南师范大学 | InGaN-based LED epitaxial wafer and preparation method thereof |
| US12009455B2 (en) | 2019-03-08 | 2024-06-11 | Univ South China Normal | InGaN-based led epitaxial wafer and fabrication method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120104432A1 (en) * | 2010-10-28 | 2012-05-03 | Hyun Wook Shim | Semiconductor light emitting device |
| CN103534204A (en) * | 2011-03-29 | 2014-01-22 | 国立大学法人蔚山科学技术大学校产学协力团 | Graphene sheet, transparent electrode including graphene sheet, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell employing transparent electrode |
| US9059339B1 (en) * | 2014-02-11 | 2015-06-16 | International Business Machines Corporation | Light emitting diodes with via contact scheme |
| US20160099386A1 (en) * | 2013-06-17 | 2016-04-07 | Electronics And Telecommunications Research Institute | Light emitting diode and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101568624B1 (en) * | 2011-09-30 | 2015-11-11 | 소코 가가쿠 가부시키가이샤 | Nitride semiconductor element and method for producing same |
| WO2014175564A1 (en) * | 2013-04-22 | 2014-10-30 | 한국산업기술대학교산학협력단 | Method for manufacturing vertical type light emitting diode, vertical type light emitting diode, method for manufacturing ultraviolet ray light emitting diode, and ultraviolet ray light emitting diode |
| CN107002981B (en) * | 2014-10-08 | 2021-05-07 | 通用电气照明解决方案有限责任公司 | Material and optical assembly for color filtering in lighting devices |
-
2017
- 2017-07-13 TW TW106123416A patent/TWI746596B/en active
- 2017-07-19 CN CN201710590005.8A patent/CN107785467B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120104432A1 (en) * | 2010-10-28 | 2012-05-03 | Hyun Wook Shim | Semiconductor light emitting device |
| CN103534204A (en) * | 2011-03-29 | 2014-01-22 | 国立大学法人蔚山科学技术大学校产学协力团 | Graphene sheet, transparent electrode including graphene sheet, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell employing transparent electrode |
| US20160099386A1 (en) * | 2013-06-17 | 2016-04-07 | Electronics And Telecommunications Research Institute | Light emitting diode and manufacturing method thereof |
| US9059339B1 (en) * | 2014-02-11 | 2015-06-16 | International Business Machines Corporation | Light emitting diodes with via contact scheme |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111668354A (en) * | 2019-03-08 | 2020-09-15 | 华南师范大学 | InGaN-based LED epitaxial wafer and preparation method thereof |
| CN111668354B (en) * | 2019-03-08 | 2021-08-17 | 华南师范大学 | InGaN-based LED epitaxial wafer and preparation method thereof |
| US12009455B2 (en) | 2019-03-08 | 2024-06-11 | Univ South China Normal | InGaN-based led epitaxial wafer and fabrication method thereof |
| CN110739376A (en) * | 2019-10-23 | 2020-01-31 | 东莞市中晶半导体科技有限公司 | LED chips, display screen module and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI746596B (en) | 2021-11-21 |
| CN107785467B (en) | 2021-09-07 |
| TW201818564A (en) | 2018-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5385614B2 (en) | Optical element and manufacturing method thereof | |
| KR100706796B1 (en) | Nitride-based top emitting light emitting device and Method of fabricating the same | |
| JP5244614B2 (en) | Group III nitride light emitting device | |
| US8395176B2 (en) | Top-emitting nitride-based light-emitting device with ohmic characteristics and luminous efficiency | |
| JP5084099B2 (en) | Top-emitting nitride-based light emitting device and method for manufacturing the same | |
| KR100794304B1 (en) | Optical device and Method of fabricating the same | |
| US8471239B2 (en) | Light-emitting element and a production method therefor | |
| KR20070046224A (en) | High-brightness nitride-based light emitting devices with large area and capability using refractory supporting substrate layers | |
| TWI462334B (en) | Light emitting diode structure and manufacture method thereof | |
| CN104810455A (en) | Ultraviolet semiconductor light emitting device and manufacturing method thereof | |
| JP4670034B2 (en) | Ga2O3-based semiconductor layer provided with electrodes | |
| JP5078039B2 (en) | Ga2O3 semiconductor device and method for manufacturing Ga2O3 semiconductor device | |
| US10804435B2 (en) | Light-emitting device | |
| TW201034252A (en) | Light emitting device | |
| KR20090115322A (en) | Group 3 nitride-based semiconductor devices | |
| CN107785467A (en) | Light emitting element | |
| CN204857768U (en) | Ultraviolet semiconductor luminescent device | |
| Yao et al. | Improvement in performance of GaN-based light-emitting diodes with indium tin oxide based transparent ohmic contacts | |
| KR20060007948A (en) | Top emitting light emitting device and method of manufacturing thereof | |
| KR20090115314A (en) | Group 3 nitride-based semiconductor devices | |
| TW202038482A (en) | Semiconductor device | |
| KR20070099076A (en) | Fabrication of group 3 nitride-based light emitting device through high-performance ohmic contact electrode body | |
| Choi et al. | Optimization of p-bonding electrodes on zno: ga in gan-based light-emitting diodes | |
| KR100601971B1 (en) | Top emitting light emitting device and method of manufacturing thereof | |
| TWI336143B (en) | Light-emitting diode and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |