KR20060007948A - Top emitting light emitting device and method of manufacturing thereof - Google Patents

Abstract

The present invention relates to a top-emitting nitride-based light emitting device and a method of manufacturing the same, in which the top-emitting nitride-based light emitting device is an n-type cladding layer, an active layer, a p-type cladding layer, an interface modification layer, and a transparent conductive thin film layer sequentially on the substrate. And the interface modification layer is formed of a p-type transparent conductive oxide. According to the top-emitting nitride-based light emitting device and a method of manufacturing the same, the ohmic contact property with the p-type cladding layer is improved, the electrical properties are improved, and the light emitting efficiency of the device can be improved by providing high light transmittance.

Description

Top-emitting nitride-based light emitting device and method for manufacturing the same

1 is a cross-sectional view showing a top-emitting nitride-based light emitting device according to an embodiment of the present invention,

2 is a cross-sectional view showing a top-emitting nitride-based light emitting device according to another embodiment of the present invention,

3 is a graph showing a result of measuring current-voltage characteristics of a p-type electrode structure in which p-type LaNiO ₃ and ITO are sequentially stacked,

4 is a graph showing the results of measuring current-voltage characteristics of a light emitting device to which a p-type electrode structure in which p-type LaNiO ₃ and ITO are sequentially stacked.

<Description of Symbols for Main Parts of Drawings>

110: substrate 150: P-type cladding layer

160: interface modification layer 165: insertion metal layer

170: transparent conductive thin film layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a top emitter nitride light emitting device and a method of manufacturing the same, and more particularly, to a top emitter nitride light emitting device having improved ohmic characteristics and luminous efficiency and a method of manufacturing the same.

Currently, transparent conductive thin films are widely used in the optoelectronic field, the display field, and the energy industry.

In the field of light emitting devices, research is being actively conducted around the world to develop a transparent conductive ohmic electrode structure that functions as a smooth hole injection and a high efficiency light emission.

Currently, the most actively studied transparent conductive thin film materials are transparent conducting oxide (TCO) and transparent conducting nitride (TCN).

The transparent conductive oxide (TCO) includes indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), tin indium oxide (ITO), and the transparent conductive nitride (TCN) is titanium nitride (TiN). There is).

However, these materials have relatively large sheet resistance values, high light reflectivity, and relatively small work function values, so that they alone are p-type transparent materials of top-emitted gallium nitride-based light emitting devices. There are problems that are difficult to apply as an ohmic electrode.

If you describe the problem,

First, the transparent conductive thin films listed above are generally 100 Ω / □ values when forming thin films by PVD (Physical Vapor Deposition) method such as sputtering, e-beam or heat evaporator. Since it has a large sheet resistance close to it, not only makes it difficult to spread current in the horizontal direction (parallel to the interlayer interface) of the light emitting device, but also makes it difficult to smooth hole injection in the vertical direction. It is difficult to apply a high brightness light emitting device having a large area and a large capacity.

Second, the transparent conductive thin films listed above have high light reflection and absorption properties for the light emitted from the gallium nitride-based light emitting diodes, thereby reducing luminous efficiency.

Third, transparent conductive thin films, including tin indium oxide (ITO) and titanium nitride (TiN), have relatively small work function values, making it difficult to form ohmic contact by direct contact with p-type gallium nitride.

Finally, the transparent conductive oxide (TCO) is an insulating material due to the large oxidation of gallium (Ga) on the surface of gallium nitride in the thin film formation process when applied as an electrode in direct ohmic contact with a gallium nitride compound semiconductor. It is difficult to form a high quality ohmic contact electrode by causing gallium oxide (Ga ₂ O ₃ ) production.

On the other hand, light emitting devices are classified into top-emitting light emitting diodes (TLEDs) and flip-chip light emitting diodes (FCLEDs).

Currently, a widely used top-emitting light emitting diode is configured to emit light through an ohmic contact layer in contact with a p-type cladding layer. However, in order to realize a high brightness top-emitting type light emitting diode, a high quality current spreading layer is absolutely required to compensate for the high surface resistance of the p-type cladding layer having a low hole concentration. Therefore, the current spreading thin film layer having low sheet resistance and high light transmittance may be formed as an ohmic contact layer to provide smooth hole injection, current spreading, and excellent light emission. It is required to be able.

As the top-emitting light emitting diode known to date, an ohmic contact layer in which a nickel (Ni) layer and a gold (Au) layer are sequentially formed on a p-type cladding layer is widely used.

The ohmic contact layer made of nickel-gold is known to have excellent specific contact resistance and translucency of about 10 ⁻³ to 10 ⁻⁴ μm ₂ by heat treatment in an oxygen (O ₂ ) atmosphere.

The conventional ohmic contact layer is a nickel oxide (p-type semiconductor oxide) at the interface between gallium nitride forming a p-type cladding layer and a nickel layer applied as an ohmic contact layer when heat-treated at a temperature of about 500 ° C. to 600 ° C. NiO is formed between islands and upper layers of islands to reduce Schottky barrier height (SBH), which is a carrier of many carriers near the surface of p-type cladding layer. It is easy to supply holes.

In addition, after the nickel-gold layer structure is formed on the p-type cladding layer, the heat treatment removes the Mg-H intermetallic compound to increase the magnesium dopant concentration on the gallium nitride surface through a reactivation process. It is understood that the effective carrier concentration on the surface of the p-type cladding layer is 10 ¹⁸ or more, resulting in tunneling conduction between the p-type cladding layer and the nickel contact layer containing nickel oxide, thereby exhibiting ohmic conductivity characteristics with low specific contact resistance. It is becoming.

However, the top-emitting light emitting diode using a semi-transparent ohmic contact layer formed of a nickel-gold structure contains gold (Au), which hinders the light transmittance, thereby realizing next-generation high-capacity and high brightness light emitting devices due to low luminous efficiency. There is a limit to this.

In addition, by applying a p-type reflective film ohmic electrode to increase the light emission efficiency of light to emit light through the sapphire transparent substrate Although flip chip type light emitting diode structures have been developed and studied, high quality flip chip type light emitting diodes have not been realized due to the absence of electrical, mechanical and thermally stable p type reflective film ohmic electrodes.

In order to overcome the limitations of the device of the top-emit type and flip chip type light emitting diodes, gold (Au) may be formed to have superior light transmittance than the conventional semi-transparent nickel (oxide) -gold layer structure used as a p-type ohmic contact layer. The literature on the use of completely excluded transparent conductive oxides, such as ITO, [IEEE PTL, YC Lin, etc. Vol. 14, 1668, IEEE PTL, Shyi-Ming Pan, etc Vol. 15, 646]. Recently, ITO ohmic contact layer was used to implement a top-emitting light emitting diode which exhibits an improved output power compared to the conventional nickel-gold structure. Sci. Technol., CS Chang, etc. 18 (2003), L21. However, while the ohmic contact layer having such a structure can increase the luminous efficiency of the light emitting device, it still has a problem of exhibiting a relatively high operating voltage, and thus has many limitations in application to a large area and a high-brightness light emitting device. . On the other hand, U.S. Patent No. 6,287,947 discloses a method of fabricating a light emitting diode in which an oxidized thin nickel-gold or nickel-silver structure is combined with indium tin oxide (ITO) to improve light transmission and electrical properties. have. However, the proposed method is complicated to form an ohmic contact electrode, and the ohmic electrode formed of oxides of group 2 elements on the transition metal or elemental periodic table including nickel metal has a high sheet resistance, thereby providing a highly efficient light emitting device. I have a problem that is difficult to implement.

In addition, oxidized transition metals, including nickel, have the disadvantage of falling to transmit light.

As described above, there are many difficulties in developing a high quality p-type ohmic electrode having excellent electrical and optical properties, and the root cause thereof can be summarized as follows.

First, at least a low hole concentration of the p-type gallium nitride and This 10 ⁴ Ω / □ Point with high sheet resistance,

Second, high Schottky barrier height and width at the interface between p-type gallium nitride and the electrode due to the absence of a highly transparent electrode material having a relatively high work function value compared to the work function value of p-type gallium nitride ( width) is formed, which makes it difficult to inject holes smoothly in the vertical direction,

Third, most materials are inversely proportional to electrical and optical properties, and therefore, transparent electrodes with high light transmittance generally have large sheet resistance, so that current spreading in the horizontal direction is reduced. The sharp drop and

Fourth, in the process of directly depositing the transparent conductive thin film layer on the p-type gallium nitride, there is a point that the electrical characteristics of the light emitting device is degraded due to the gallium oxide (Ga ₂ O ₃ ) is formed on the gallium nitride surface.

The present invention has been made to solve the above problems, and an object thereof is to provide a top-emitting nitride light emitting device having an ohmic contact electrode structure having high light transmittance and low sheet resistance, and a method of manufacturing the same.

In order to achieve the above object, the top-emitting nitride light emitting device according to the present invention is a top-emitting nitride-based light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, wherein the p-type cladding layer An interface modification layer formed of a p-type transparent conductive oxide thereon; A transparent conductive thin film layer formed of a transparent conductive material on the interface modification layer; It is provided.

The interfacial modification layer is formed to contain a binary or tertiary oxide formed of at least one element selected from Group 2 elements including magnesium (Mg), zinc (Zn), and beryllium (Be).

According to another aspect of the present invention, the interface modification layer is formed to contain any one oxide selected from Ag ₂ O, CuAlO ₂ , SrCu ₂ O ₂ , LaMnO ₃ , LaNiO ₃ , In _x O _1-x .

In addition, the interface modification layer may be formed by further adding a p-type dopant to the oxide.

The interface modification layer is preferably formed to a thickness of 0.1 nanometer to 100 nanometers.

In addition, further comprising an insertion metal layer formed between the interface modification layer and the transparent conductive thin film layer, the insertion metal layer is zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), At least one component selected from gallium (Ga), copper (Cu), beryllium (Be), iridium (Ir), ruthenium (Ru), and molybdenum (Mo) is formed to a thickness of 1 nanometer to 100 nanometers.

The transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), the transparent conductive oxide is indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), Oxygen (O) and at least one selected from tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt), and lanthanum (La) Is formed by combining, the transparent conductive nitride is formed by containing titanium (Ti) and nitrogen (N).

The transparent conductive thin film layer is preferably formed to a thickness of 10 nanometers to 1000 nanometers.

In addition, in order to achieve the above object, the manufacturing method of the top emitter nitride light emitting device according to the present invention is a manufacturing method of the top emitter nitride light emitting device having an active layer between the n-type cladding layer and the p-type cladding layer. In the following: Forming an interface modification layer of a p-type transparent conductive oxide on the p-type cladding layer of the light emitting structure in which an n-type cladding layer, an active layer and a p-type cladding layer are sequentially stacked on a substrate; I. Forming a transparent conductive thin film layer of a transparent conductive material on the interface modification layer; And c. It includes; the step of heat-treating the structure formed through the step to step (b).

Before forming the transparent conductive thin film layer, zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), and beryllium (Be) on the interface modification layer. The method may further include forming an insertion metal layer using at least one selected from iridium (Ir), ruthenium (Ru), and molybdenum (Mo).

The heat treatment step is preferably performed for 10 seconds to 3 hours in the range of room temperature to 800 degrees.

In addition, the heat treatment step is performed in a gas atmosphere containing at least one of nitrogen, argon, helium, oxygen, hydrogen, air, vacuum in the reactor in which the structure is built.

Hereinafter, with reference to the accompanying drawings will be described in more detail the top-emitting nitride-based light emitting device and its manufacturing method according to a preferred embodiment of the present invention.

1 is a cross-sectional view showing a top-emitting light emitting device according to a first embodiment of the present invention.

Referring to the drawings, the top-emitting light emitting device includes a substrate 110, a buffer layer 120, an n-type cladding layer 130, an active layer 140, a p-type cladding layer 150, an interface modification layer 160, The transparent conductive thin film layer 170 is sequentially stacked. Reference numeral 180 denotes a p-type electrode pad, and 190 denotes an n-type electrode pad.

Here, the substrate 110 to the p-type cladding layer 150 correspond to the light emitting structure, and the interfacial modification layer 160 and the transparent conductive thin film layer 170 stacked on the p-type cladding layer 150 are multi-ohmic contact layers. , p-type electrode structure.

The substrate 110 may be formed of any one of sapphire (Al ₂ O ₃ ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

The buffer layer 120 may be omitted.

Each layer from the buffer layer 120 to the p-type cladding layer 150 is Al _x In _y Ga _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, which is a general formula of a group III nitride compound). , Based on any compound selected from the compounds represented by 0 ≦ x + y + z ≦ 1), and the dopant is added to the n-type cladding layer 130 and the p-type cladding layer 150.

In addition, the active layer 140 may be configured in various known manners, such as a monolayer or an MQW layer.

As an example, when a gallium nitride (GaN) -based compound is applied, the buffer layer 120 is formed of GaN, and the n-type cladding layer 130 is formed of Si, Ge, Se, Te, or the like as n-type dopants to GaN. The active layer 140 is formed of InGaN / GaN MQW or AlGaN / GaN MQW, and the p-type cladding layer 150 is formed by adding Mg, Zn, Ca, Sr, Ba, etc. to GaN as a p-type dopant. .

An n-type ohmic contact layer (not shown) may be interposed between the n-type cladding layer 130 and the n-type electrode pad 190, and in the n-type ohmic contact layer, titanium (Ti) and aluminum (Al) may be sequentially formed. Various known structures, such as laminated layer structure, can be applied.

The p-type electrode pad 180 may have a layer structure in which nickel (Ni) / gold (Au) or silver (Ag) / gold (Au) is sequentially stacked.

Each layer is formed by an e-beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, or sputtering ( What is necessary is just to form by well-known vapor deposition methods, such as sputtering).

The interfacial reforming layer 160 decomposes into p-type transparent conductive nano phase oxide particles or forms a p-type transparent conductive oxide thin film layer when thermally treated in various gas atmospheres such as oxygen, nitrogen or argon at a temperature of 700 ° C. or lower. At the same time, a material capable of reducing or converting gallium oxide (Ga ₂ O ₃ ), which is a thin natural oxide layer formed on the p-type cladding layer 150, into a conductive oxide, is applied.

In addition, the interface modification layer 160 is formed on the p-type cladding layer 150 to reduce the height and width of the Schottky barrier formed between the p-type cladding layer 150 and the p-type transparent conductive oxide. A material that can provide a hole concentration of 10 ¹⁵ to 10 ¹⁸ / cm ³ is applied.

P-type transparent conducting oxides (p-type TCOs) are applied as a material of the interface modification layer 160 satisfying these conditions.

The p-type transparent conductive oxide applied to the interfacial reforming layer 160 may be a binary or ternary oxide formed of at least one element selected from Group 2 elements including magnesium (Mg), zinc (Zn) and beryllium (Be). Can be applied.

Alternatively, the p-type transparent conductive oxide applied to the interface reforming layer 160 may be formed by applying any one oxide selected from Ag ₂ O, CuAlO ₂ , SrCu ₂ O ₂ , LaMnO ₃ , LaNiO ₃ , and In _x O _1-x . Can be.

In addition, the p-type dopant may be appropriately added to the modifying layer 160 so as to control the concentration and work function of the p-type transparent conductive oxide and reduce the height and width of the Schottky barrier.

The interfacial reforming layer 160 is decomposed into p-type transparent conductive nanophase oxide particles during heat treatment or 0.1 to form a thin film layer capable of quantitatively tunneling holes, which are main carriers, as a p-type transparent conductive oxide thin film layer. It is desirable to form a thickness of 100 nanometers.

The transparent conductive thin film layer 170 is formed on the interface modification layer 160.

The transparent conductive thin film layer 170 is applied to either of transparent conductive oxide (TCO) or transparent conductive nitride (TCN).

Transparent conductive oxides (TCO) are indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo) ), Vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium ( Pd), platinum (Pt), lanthanum (La) element-based metals preferably formed of at least one or more components and oxygen (O) is preferably applied.

The material for the transparent conductive oxide may be selected in consideration of a work function value and sheet resistance value.

The transparent conductive nitride (TN) is preferably formed of titanium (Ti) and nitrogen (N) having low sheet resistance and high light transmittance.

In addition, the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) applied to the transparent conductive thin film layer 170 may add at least one or more elements of the metal components on the periodic table of the elements to the dopant to improve electrical properties with respect to the main component. Can be.

In this case, the addition ratio of the dopant added in order to have appropriate electrical properties to the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) is preferably applied within the range of 0.001 to 20 weight percent.

In addition, the thickness of the transparent conductive thin film layer 170 is preferably formed to a thickness of 10 nanometers to 1000 nanometers to have a suitable light transmittance and electrical conductivity.

The interface modification layer 160 and the transparent conductive thin film layer 170, which are the multi-ohmic contact layers, include an n-type cladding layer 130, an active layer 140, and a p-type cladding layer 150 sequentially stacked on the substrate 110. The p-type cladding layer 150 of the light emitting structure may be sequentially formed of the material described above.

The interface modification layer 160 and the transparent conductive thin film layer 170 may be formed of any one of an electron beam evaporator, a thermal evaporator, a sputtering deposition, and a pulsed laser deposition.

In addition, the deposition temperature applied to form the interface modification layer 160 and the transparent conductive thin film layer 170 is in the range of 20 ℃ to 1500 ℃, the pressure in the deposition machine is carried out at atmospheric pressure to about 10 ^-12 Torr.

In addition, after the interface modification layer 160 and the transparent conductive thin film layer 170 are formed, it is preferable to undergo an annealing process.

Annealing is performed at a temperature in the reactor at 100 ° C to 800 ° C for 10 seconds to 3 hours in a vacuum or various gas atmospheres.

At least one gas of nitrogen, argon, helium, oxygen, hydrogen, or air may be applied to the gas introduced into the reactor during the heat treatment.

Figure 2 is a cross-sectional view showing a top-emitting light emitting device according to another embodiment of the present invention. Elements having the same function as in the above-described drawings are denoted by the same reference numerals.

Referring to the drawings, the top-emitting light emitting device includes a substrate 110, a buffer layer 120, an n-type cladding layer 130, an active layer 140, a p-type cladding layer 150, an interface modification layer 160, The insertion metal layer 165 and the transparent conductive thin film layer 170 are sequentially stacked.

Here, the p-type electrode structure includes an interface modification layer 160, an insertion metal layer 165, and a transparent conductive thin film layer 170.

The insertion metal layer 165 is formed between the interface modification layer 160 and the transparent conductive thin film layer 170.

The intercalation metal layer 165 is formed of a metal capable of easily transforming into a transparent conductive oxide during heat treatment and at the same time adjusting the electrical or optical properties of the transparent conductive thin film layer 170 to be formed thereon in the interface modification layer 160 or a later process. It is preferable.

Preferably, the insertion metal layer 165 may include zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), beryllium (Be), and iridium. (Ir), ruthenium (Ru), and molybdenum (Mo) is formed of at least one or more components.

Insert metal layer 165 may be formed of a plurality of layers using the materials listed above.

Preferably, the insertion metal layer 165 is formed to a thickness of 1 nanometer to 100 nanometers.

The light emitting device may be formed of the material described above on the p-type cladding layer 150 of the light emitting structure in which the n-type cladding layer 130, the active layer 140, and the p-type cladding layer 150 are sequentially stacked on the substrate 110. The interfacial reforming layer 160, the interposed metal layer 165, and the transparent conductive thin film layer 170 may be sequentially deposited by the deposition method described above to form a p-type electrode structure, and then heat treated.

FIG. 3 illustrates an interfacial modification layer 160 having p-type LaNiO ₃ formed at 3 nanometers and a transparent conductive thin film layer 170 laminated at 200 nanometers with ITO on the p-type cladding layer 150, followed by heat treatment at 600 ° C. FIG. Shows the result of measuring the current-voltage characteristics of the p-type electrode structure fabricated.

Each graph marked with different marks in the drawings is measured at different inter-electrode distances (4 and 8 micrometers) for the fabricated p-type electrode structure. These results show that the current-voltage relationship follows Ohm's law. That is, the p-type electrode structure heat-treated as shown in FIG. 3 shows a linear current-voltage characteristic that means ohmic contact.

FIG. 4 illustrates an interface modification layer 160 in which p-type LaNiO ₃ is formed at 3 nanometers on the p-type cladding layer 150 of the light emitting structure, and a transparent conductive thin film layer 170 in which 200 nanometers are laminated with ITO. The graph shows the results of measuring the current-voltage characteristics of the light emitting device to which the p-type electrode structure fabricated by heat treatment at ℃ was applied.

As can be seen from Figure 4, it provides a low operating voltage within 3.4V at 20mA injection current.

As described so far, according to the top-emitted nitride light emitting device according to the present invention and a method for manufacturing the same, the ohmic contact property with the p-type cladding layer is improved, thereby improving electrical characteristics and providing high light transmittance. The luminous efficiency of the device can be improved.

Claims (13)

In a top-emit type nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, An interface modification layer formed of a p-type transparent conductive oxide on the p-type cladding layer; And a transparent conductive thin film layer formed of a transparent conductive material on the interface modification layer. The method of claim 1, The interfacial reforming layer is formed of a top emiterate formed by containing a binary or tertiary oxide formed of at least one element selected from the group II elements including magnesium (Mg), zinc (Zn) and beryllium (Be). Type nitride light emitting device. The method of claim 1, The interfacial modifying layer is a top-emitted nitride-based light emitting, characterized in that the oxide formed of any one selected from Ag ₂ O, CuAlO ₂ , SrCu ₂ O ₂ , LaMnO ₃ , LaNiO ₃ , In _x O _1-x contained device. The top emission type nitride light emitting device according to claim 2 or 3, wherein the interface modification layer is formed by further adding a p-type dopant to the oxide. The top emission type nitride light emitting device of claim 1, wherein the interface modification layer is formed to a thickness of 0.1 nanometer to 100 nanometers. The method of claim 1, further comprising an insertion metal layer formed between the interface modification layer and the transparent conductive thin film layer, The intercalation metal layer includes zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), beryllium (Be), iridium (Ir), and ruse A top-emitting nitride-based light emitting device, characterized in that formed of a thickness of 1 nanometer to 100 nanometers with at least one component selected from nium (Ru) and molybdenum (Mo). The method of claim 1, The transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), The transparent conductive oxide may be indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), Vanadium (V), Copper (Cu), Iridium (Ir), Rhodium (Rh), Ruthenium (Ru), Tungsten (W), Cobalt (Co), Nickel (Ni), Manganese (Mn), Palladium (Pd) At least one component selected from platinum (Pt) and lanthanum (La) -based metals and oxygen (O) formed therein; And the transparent conductive nitride includes titanium (Ti) and nitrogen (N). The top emission type nitride light emitting device of claim 1, wherein the transparent conductive thin film layer has a thickness of 10 nanometers to 1000 nanometers. In the manufacturing method of the top-emit type nitride light emitting device having an active layer between the n-type cladding layer and the p-type cladding layer, end. Forming an interface modification layer of a p-type transparent conductive oxide on the p-type cladding layer of the light emitting structure in which an n-type cladding layer, an active layer and a p-type cladding layer are sequentially stacked on a substrate; I. Forming a transparent conductive thin film layer of a transparent conductive material on the interface modification layer; And All. And heat-treating the structure formed through the steps (a) through (b). The method of claim 9, Before forming the transparent conductive thin film layer, zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), and beryllium (Be) on the interface modification layer. Forming an insertion metal layer with at least one selected from iridium (Ir), ruthenium (Ru), molybdenum (Mo); manufacturing method of a top-emitting nitride light emitting device further comprises a . The method of claim 9, The interfacial reforming layer may be formed to contain a binary or tertiary oxide formed of at least one element selected from the group II elements including magnesium (Mg), zinc (Zn), and beryllium (Be). Method of manufacturing a meat type nitride light emitting device. The method of claim 9, The interfacial reforming layer is a top-emitted nitride system, characterized in that the oxide formed of any one selected from Ag ₂ O, CuAlO ₂ , SrCu ₂ O ₂ , LaMnO ₃ , LaNiO ₃ , In _x O _1-x contained Method of manufacturing a light emitting device. The method according to claim 11 or 12, wherein the interfacial modification layer is formed by further adding a p-type dopant to the oxide.

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