KR100574104B1 - Flip-chip light emitting device and method of manufacturing thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip chip nitride light emitting device and a method of manufacturing the same. In the flip chip nitride light emitting device, an n-type cladding layer, an active layer and a p-type cladding layer are sequentially stacked on a substrate, and an indium is deposited on the p-type cladding layer. And an interface modification layer formed of at least one oxide selected from the group oxides, tin oxides, and zinc oxides, a transparent conductive thin film layer formed of a transparent conductive material on the interface reforming layer, and a reflective layer formed of a reflective material on the transparent conductive thin film layer. . According to the flip chip type nitride-based light emitting device and a manufacturing method thereof, the ohmic contact property with the p-type cladding layer is improved, so that the wire bonding efficiency and the yield can be increased when packaging the light emitting device, and the low specific contact resistance, the high electrical property, Provide luminous efficiency.

Description

Flip-chip nitride light emitting device and method for manufacturing the same

1 is a cross-sectional view showing a flip chip nitride-based light emitting device according to an embodiment of the present invention,

2 is a cross-sectional view illustrating a flip chip nitride light emitting device according to another embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

110: substrate 150: P-type cladding layer

160: interface modification layer 165: insertion metal layer

170: transparent conductive thin film layer 180: reflective layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flip chip nitride light emitting device and a manufacturing method thereof, and more particularly, to a flip chip nitride light emitting device having improved ohmic characteristics and luminous efficiency, and a manufacturing method thereof.

In order to implement a light emitting device such as a light emitting diode or a laser diode using a nitride compound semiconductor, for example, gallium nitride (GaN) semiconductor emitting blue, green, and ultraviolet rays, an ohmic contact structure between the semiconductor and the electrode is very important. Currently commercially available gallium nitride-based light emitting device is formed on an insulating sapphire (Al ₂ O ₃ ) substrate.

Such gallium nitride-based light emitting devices are classified into top-emitting light emitting diodes (TLEDS) and flip-chip light emitting diodes (FCLEDS).

The top emit light emitting diode is formed such that light is emitted through the ohmic electrode layer in contact with the p-type cladding layer.

In addition, the top-emitting type light emitting device is transparent and has low sheet resistance to poor electrical characteristics such as low current injection and current spreading resulting from the thin film characteristics of the p-type cladding layer with low hole concentration. It is possible to overcome the problems of the light emitting device by developing an ohmic contact electrode having a sheet resistance.

This top-emitting light emitting device is generally a metal thin film structure based on transition metals such as nickel (Ni) metal, and a metal thin film of oxidized translucent nickel (Ni) / gold (Au) is widely used. It is becoming.

A metal thin film based on nickel (Ni) metal is heat-treated in an oxygen (O ₂ ) atmosphere to form a semi-transparent ohmic contact layer having a specific contact resistance of about 10 ^-3 to 10 ^-4 Ωcm ² . It is reported to be.

This low specific contact resistance is due to the p-type semiconductor oxide nickel oxide (NiO) at the interface between p-type gallium nitride and nickel (Ni) when heat-treated in an oxygen (O ₂ ) temperature range. It is formed between Au formed in the upper layer and the upper layer to reduce Schottky barrier height (HBT). Increase the effective carrier concentration near the gallium surface. On the other hand, nickel (Ni) / gold (Au) is contacted with p-type gallium nitride and then heat treated to remove Mg-H intermetallic complexes, thereby increasing the magnesium (Mg) dopant concentration on the gallium nitride surface. Increasing reactivation results in an effective carrier concentration of at least 10 ^{19 on} the surface of the p-type gallium nitride, thereby providing tunneling conduction between the p-type gallium nitride and the electrode layer (a nickel oxide layer containing gold). It is understood that it exhibits ohmic conductivity characteristics.

However, the top-emitting light emitting diode using a translucent electrode thin film formed of nickel / gold has low light utilization efficiency, making it difficult to realize a large capacity and high brightness light emitting device.

Recently, there is a need to develop a flip chip light emitting device using silver (Ag), silver oxide (Ag ₂ O), and aluminum (Al), which have been spotlighted as high reflective layer materials to realize high-capacity high-brightness light emitting devices.

However, these reflective metals can provide high luminous efficiency temporarily because they have high reflection efficiency, but due to the characteristics of small work function, it is difficult to form ohmic contact with low resistance, resulting in short device life. There is a problem in that the adhesion with gallium nitride is poor, and thus the device does not provide stable reliability.

In more detail, first, aluminum (Al) metals easily form nitrides (AlN) at low work function values and relatively low temperatures during heat treatment, making it difficult to form ohmic contacts with p-type gallium nitride.

Next, silver (Ag) forms a high quality ohmic contact and has a high reflectance, but has a problem that it is difficult to form a high quality thin film through a thin film forming process due to thermal instability and poor mechanical adhesion to gallium nitride.

Recently, research has been actively conducted to develop an ohmic contact layer having a low specific resistance and providing a high reflectance.

Mensz et al. The group proposed, in electronics letters 33 (24) pp. 2066, nickel (Ni) / aluminum (Al) and nickel (Ni) / silver (Ag) structures as two-layer structures, but these structures form ohmic contacts. This difficulty has a problem of causing a lot of heat generation due to high operating voltage during the operation of the light emitting diode.

Also recently, Michael R. Krames et al. The group reported that the study of nickel (Ni) / silver (Ag) and gold (Au) / nickel oxide (NiO _x ) / aluminum (Al) electrode structures was carried out through a US published patent (US 2002/0171087 A1). However, this structure also has a disadvantage in that the adhesion is lowered, and the luminous efficiency is lowered due to diffuse reflection.

 SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a flip chip nitride light emitting device having a high adhesiveness, a low specific contact resistance, and a high reflectance electrode structure and a method of manufacturing the same.

In order to achieve the above object, the flip chip nitride light emitting device according to the present invention is a flip chip nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, the indium oxide on the p-type cladding layer An interface modification layer formed of at least one oxide selected from tin oxide and zinc oxide; A transparent conductive thin film layer formed of a transparent conductive material on the interface modification layer; And a reflective layer formed of a reflective material on the transparent conductive thin film layer.

The indium oxide is composed of indium oxide (In ₂ O ₃ ) as a main component and as an additive element gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), At least one component selected from iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La) element-based metals It is preferable that it is formed to include.

In addition, the tin oxide is composed mainly of tin oxide (SnO ₂ ) and as an additive element zinc (Zn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), Among copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), and lanthanum (La) elemental metals It is preferably formed comprising at least one component selected.

The zinc oxide is mainly composed of zinc oxide (ZnO) and added elements as indium (In), tin (Sn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V). ), Copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), lanthanum (La) It is preferably formed by including at least one component selected from them.

In addition, the addition ratio of the additive element to the main component of the interfacial modification layer is applied at 0.001 to 50 weight percent.

The interface modification layer is formed to a thickness of 0.1 nanometer to 10 nanometers.

Preferably, further comprising an insertion metal layer formed between the interface modification layer and the transparent conductive thin film layer, the insertion metal layer is zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg) , At least one selected from gallium (Ga), copper (Cu), beryllium (Be), iridium (Ir), ruthenium (Ru), and molybdenum (Mo), and is formed to a thickness of 1 nanometer to 100 nanometers. .

In addition, the transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), the transparent conductive oxide is indium (In), tin (Sn), zinc (Zn), gallium (Ga) , Cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru ), At least one selected from tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium (Pd), platinum (Pt), and lanthanum (La) element-based metals and oxygen ( O) is combined and formed, and the transparent conductive nitride includes titanium (Ti) and nitrogen (N) formed.

The transparent conductive thin film layer is preferably formed to a thickness of 10 nanometers to 1000 nanometers.

The reflective layer is silver (Ag), silver oxide (Ag ₂ O), aluminum (Al), zinc (Zn), titanium (Ti), rhodium (Rh), magnesium (Mg), palladium (Pd), ruthenium (Ru) ), Platinum (Pt), iridium (Ir) is formed of any one of an element selected from, or an alloy containing at least one element selected above, solid solution.

The reflective layer is preferably formed to a thickness of 100 nanometers to 1000 nanometers.

In addition, in order to achieve the above object, a method of manufacturing a flip chip nitride light emitting device according to the present invention is a method of manufacturing a flip chip nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer. . Interface modification layer including at least one oxide selected from indium oxide, tin oxide and zinc oxide on the p-type cladding layer of the light emitting structure in which the n-type cladding layer, the active layer and the p-type cladding layer are sequentially stacked on the substrate Forming a; I. Forming a transparent conductive thin film layer of a transparent conductive material on the interface modification layer; And c. Forming a reflective layer on the transparent conductive thin film layer; la. And heat-treating the structure formed through the multi-steps.

In addition, the heat treatment before the reflective layer is formed after the step (b); preferably further comprises.

The heat treatment step is preferably performed for 10 seconds to 3 hours in the range of room temperature to 800 degrees.

In addition, the heat treatment step is performed in a gas atmosphere containing at least one of nitrogen, argon, helium, oxygen, hydrogen, air, vacuum in the reactor in which the light emitting device in which the p-type electrode structure is formed.

Hereinafter, a flip chip nitride light emitting device and a method of manufacturing the same according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a flip chip type light emitting device according to a first embodiment of the present invention.

Referring to the drawings, the flip chip type light emitting device includes a substrate 110, a buffer layer 120, an n-type cladding layer 130, an active layer 140, a p-type cladding layer 150, an interface modification layer 160, a transparent conductive material. The thin film layer 170 and the reflective layer 180 are sequentially stacked. Reference numeral 190 is a p-type electrode pad, and 200 is an n-type electrode pad.

In this case, the substrate 110 to the p-type cladding layer 150 correspond to the light emitting structure, and the interface modification layer 160 and the transparent conductive thin film layer 170 stacked on the p-type cladding layer 150 are formed on the multi-ohmic contact layer. Corresponding.

The substrate 110 may be formed of any one of sapphire (Al ₂ O ₃ ), silicon carbide (SiC), silicon (Si), and gallium arsenide (GaAs).

The buffer layer 120 may be omitted.

Each layer from the buffer layer 120 to the p-type cladding layer 150 is Al _x In _y Ga _z N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, which is a general formula of a group III nitride compound). , Based on any compound selected from the compounds represented by 0 ≦ x + y + z ≦ 1), and the dopant is added to the n-type cladding layer 130 and the p-type cladding layer 150.

In addition, the active layer 140 may be configured in various known manners, such as a monolayer or an MQW layer.

As an example, when a gallium nitride (GaN) -based compound is applied, the buffer layer 120 is formed of GaN, and the n-type cladding layer 130 is formed of Si, Ge, Se, Te, or the like as n-type dopants to GaN. The active layer 140 is formed of InGaN / GaN MQW or AlGaN / GaN MQW, and the p-type cladding layer 150 is formed by adding Mg, Zn, Ca, Sr, Ba, etc. to GaN as a p-type dopant. .

An n-type ohmic contact layer (not shown) may be interposed between the n-type cladding layer 130 and the n-type electrode pad 200, and in the n-type ohmic contact layer, titanium (Ti) and aluminum (Al) may be sequentially formed. Various known structures, such as laminated layer structure, can be applied.

The p-type electrode pad 190 may have a layer structure in which nickel (Ni) / gold (Au) or silver (Ag) / gold (Au) is sequentially stacked.

Each layer is formed by an e-beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, or sputtering ( What is necessary is just to form by well-known vapor deposition methods, such as sputtering).

The interfacial reforming layer 160 easily decomposes into transparent conductive nanophase particles or forms a transparent conductive thin film layer at the time of heat treatment in various gas atmospheres such as oxygen, nitrogen or argon at a temperature of 700 ° C. or lower, and simultaneously forms a p-type cladding layer. A material capable of reducing or converting gallium oxide (Ga ₂ O ₃ ), which is a thin natural oxide layer formed on the top, into a conductive oxide is applied.

In addition, the interface modification layer 160 is transparent conductive nanophase particles formed on the p-type cladding layer 150 so as to reduce the height and width of the Schottky barrier formed between the p-type cladding layer 150. Or a material capable of providing an electron concentration of 10 ¹⁵ to 10 ¹⁷ / cm ^{3 in} the thin film layer.

The material of the interfacial reforming layer 160 that satisfies these conditions is formed to include at least one oxide of indium oxide, tin oxide, and zinc oxide, which are transparent conductive oxides.

The open boundary layer 160 may be formed by adding an oxide alone or an additional element selected from indium oxide, tin oxide, and zinc oxide.

Indium oxide is formed mainly from indium oxide (In ₂ O ₃ ).

Preferably, the indium oxide is added to the indium oxide (In ₂ O ₃ ) as the main component, an addition element capable of controlling the concentration and work function of the indium oxide and reducing the height and width of the Schottky barrier.

Additional elements added to the indium oxide of the indium oxide include gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), iridium (Ir), and rhodium (Rh). ), At least one selected from ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), and lanthanum (La) element-based metals.

Tin-based oxide, which is another application material of the interfacial reforming layer 160, is formed using tin oxide (SnO ₂ ) as a main component.

Preferably, the tin-based oxide is preferably further added with an element which can reduce the height and width of the Schottky barrier while controlling the concentration and work function of the tin oxide.

Additional elements added to the tin oxide of the tin oxide include zinc (Zn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), and iridium (Ir). ), At least one selected from rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), and lanthanum (La) element-based metals Apply.

Another zinc-based oxide, which is a material of the interfacial reforming layer 160, is formed using zinc oxide (ZnO) as a main component.

Preferably, the zinc-based oxide is preferably added with an additional element that can reduce the height and width of the Schottky barrier while controlling the concentration and work function of the zinc oxide.

Additional elements added to zinc oxide of zinc oxide include indium (In), tin (Sn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), and copper (Cu ), At least one selected from iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), and lanthanum (La) element-based metals The thing containing the above component is applied.

The amount of the above added elements added to indium oxide, tin oxide and zinc oxide, respectively, is preferably applied at 0.1 to 50 weight percent. The weight percentage here refers to the weight ratio between the materials added.

The interfacial modification layer 160 is preferably formed to a thickness of 0.1 nanometers to 10 nanometers that can be easily decomposed into a transparent conductive nanophase oxide during heat treatment or to form a thin film layer in which carriers can be quantitatively tunneled. .

The transparent conductive thin film layer 170 is formed on the interface modification layer 160.

The transparent conductive thin film layer 170 is applied to either of transparent conductive oxide (TCO) or transparent conductive nitride (TCN).

Transparent conductive oxides (TCO) are indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo) ), Vanadium (V), copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), palladium ( Pd), platinum (Pt), and lanthanum (La) element-based metal is preferably formed of at least one or more components and oxygen (O).

The material for the transparent conductive oxide may be selected in consideration of a work function value and sheet resistance value.

The transparent conductive nitride (TN) is preferably formed of titanium (Ti) and nitrogen (N) having low sheet resistance and high light transmittance.

In addition, the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) applied to the transparent conductive thin film layer 170 may add at least one or more elements of the metal components on the periodic table of the elements to the dopant to improve electrical properties with respect to the main component. Can be.

Herein, the addition ratio of the dopant added in order to have appropriate electrical properties to the transparent conductive oxide (TCO) and the transparent conductive nitride (TCN) is preferably applied within the range of 0.001 to 20 weight percent.

In addition, the thickness of the transparent conductive thin film layer 165 is preferably formed to a thickness of 10 nanometers to 1000 nanometers to have a suitable light transmittance and electrical conductivity.

The interfacial modified layer 160 and the transparent conductive thin film layer 170, which are multi-ohmic contact layers having such a structure, are formed of the materials described above, and then heat treated in an appropriate gas atmosphere and temperature to achieve high light transmittance, that is, at a wavelength range of 400 nanometers. Gallium oxide, a natural oxide layer that has a transmittance of 90% or more and has a low sheet resistance (10 Ω / □ or less), becomes a transparent conductive oxide and remains on the surface of the p-type cladding layer 150 and serves as an obstacle to carrier flow at the interface. Reduction of (Ga ₂ O ₃ ) reduces the height and width of the Schottky barrier, and improves electrical properties by inducing a tunneling effect, which is advantageous for forming ohmic contacts. Light transmittance close to%.

The reflective layer 180 is a material having high reflectance, for example, silver (Ag), silver oxide (Ag ₂ O), aluminum (Al), zinc (Zn), titanium (Ti), rhodium (Rh), magnesium (Mg), It is formed of at least one material selected from palladium (Pd), ruthenium (Ru), platinum (Pt).

According to another aspect of the present invention, the reflective layer 180 includes silver (Ag) as a main component, and aluminum (Al), silver oxide (Ag ₂ O), zinc (Zn), titanium (Ti), At least one element selected from rhodium (Rh), magnesium (Mg), palladium (Pd), ruthenium (Ru), platinum (Pt), and iridium (Ir) is contained within about 5 weight percent (5 Wt%) It is formed of one alloy or solid solution. The silver (Ag) -based alloy improves the bad adhesion and thermal instability of the silver (Ag) alone component, thereby providing excellent contact and thermal durability as well as maintaining high light reflectance.

Preferably, the reflective layer 180 is formed to a thickness of 100 nanometers to 1000 nanometers.

It is preferable that the reflective layer 180 is also heat-treated after depositing the material described above.

Alternatively, the interface modification layer 160, the transparent conductive thin film layer 170, and the reflective layer 180 are formed through a continuous deposition process, and then heat treated.

The multi-ohmic contact layer and the reflective layer 180 having such a structure prevent surface degradation occurring at a temperature of 200 ° C. or higher, are stable to oxidation, and have a high reflectance.

2 is a cross-sectional view showing a flip chip type light emitting device according to another embodiment of the present invention. Elements having the same function as in the above-described drawings are denoted by the same reference numerals.

Referring to the drawings, the flip chip type light emitting device includes a substrate 110, a buffer layer 120, an n-type cladding layer 130, an active layer 140, a p-type cladding layer 150, an interface modification layer 160, and an insertion metal layer. 165, the transparent conductive thin film layer 170, and the reflective layer 180 are sequentially stacked.

The multi-ohmic contact layer may include an interfacial modification layer 160, an insertion metal layer 165, and a transparent conductive thin film layer 170.

The insertion metal layer 165 is formed between the interface modification layer 160 and the transparent conductive thin film layer 170.

The intercalation metal layer 165 is preferably applied to a metal that can readily transform into a transparent conductive oxide during heat treatment and at the same time adjust the electrical or optical properties of the interface modified layer 160 or the transparent conductive thin film layer to be formed thereon in a later process. .

Preferably, the insertion metal layer 165 may include zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), beryllium (Be), and iridium. (Ir), ruthenium (Ru), and molybdenum (Mo) is formed of at least one or more components.

Insert metal layer 165 may be formed of a plurality of layers using the materials listed above, of course.

Preferably, the insertion metal layer 165 is formed to a thickness of 1 nanometer to 100 nanometers.

Hereinafter, a process of manufacturing a light emitting device having such a structure will be described.

First, the light emitting structure is formed by sequentially depositing the buffer layer 120, the n-type cladding layer 130, the active layer 140, and the p-type cladding layer 150 on the substrate 110.

Thereafter, in order to secure a space for forming the n-type electrode pad 200, a mesa structure is formed by etching the p-type cladding layer 150 to a part of the n-type cladding layer 130.

Next, a multi-ohmic contact layer is formed on the p-type cladding layer 150.

That is, when the structure of FIG. 1 is applied, the interface modification layer 160 and the transparent conductive thin film layer 170 are formed on the p-type cladding layer 150 of the light emitting structure manufactured through the manufacturing process, and the structure of FIG. When applied, the interface modification layer 160, the insertion metal layer 165, and the transparent conductive thin film layer 170 are sequentially formed.

The interfacial reforming layer 160, the intercalation metal layer 165, and the transparent conductive thin film layer 170 may be formed of an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), and dual thermal evaporator (dual). What is necessary is just to form by well-known evaporation methods, such as -type thermal evaporator sputtering.

In addition, the deposition temperature applied to sequentially form from the interface modification layer 160 to the transparent conductive thin film layer 170 is in the range of 20 ℃ to 1500 ℃, the pressure in the evaporator is performed at atmospheric pressure to about 10 ^-12 Torr.

In addition, after forming from the interface modification layer 160 to the transparent conductive thin film layer 170, it is preferable to undergo an annealing process.

Annealing is performed at a temperature in the reactor at 100 ° C to 800 ° C for 10 seconds to 3 hours in a vacuum or various gas atmospheres.

At least one gas of nitrogen, argon, helium, oxygen, hydrogen, or air may be applied to the gas introduced into the reactor during the heat treatment.

After the heat treatment, the reflective layer 180 is formed of the material described above on the transparent conductive thin film layer 170.

The reflective layer 180 may be deposited by the deposition method described above.

After forming the reflective layer 180, the structure is heat-treated by the method described above to improve the adhesion and thermal stability of the reflective layer 180.

Unlike this, the thermal treatment may be performed only once after sequentially forming the interfacial reforming layer 160 to the reflective layer 180 on the p-type cladding layer 150.

According to the experiment, when the first heat treatment is performed after the transparent conductive thin film layer 170 is formed and the second heat treatment is performed after the reflective layer 180 is formed, the light transmittance of the multi-ohmic contact layer is higher and the reflectance of the reflective layer 180 is increased. It was confirmed to increase.

As described so far, according to the flip chip type nitride light emitting device and a method of manufacturing the same, the ohmic contact property with the p-type cladding layer is improved, so that the wire bonding efficiency and the yield can be increased when packaging the light emitting device. And low electrical contact resistance and high electrical and luminous efficiency.

Claims (14)

In a flip chip nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, An interface modification layer formed on the p-type cladding layer including at least one oxide selected from indium oxide, tin oxide, and zinc oxide; A transparent conductive thin film layer formed of a transparent conductive material on the interface modification layer; And And a reflective layer formed of a reflective material on the transparent conductive thin film layer. The method of claim 1, The indium oxide is composed of indium oxide (In ₂ O ₃ ) as a main component and as an additive element gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper (Cu), At least one component selected from iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn) and lanthanum (La) element-based metals Flip chip type nitride-based light emitting device characterized in that it comprises a. The method of claim 1, The tin oxide has tin oxide (SnO ₂ ) as a main component and zinc (Zn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V), copper Selected from (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), and lanthanum (La) Flip chip type nitride-based light emitting device comprising at least one component. The method of claim 1, The zinc oxide is mainly composed of zinc oxide (ZnO) and added elements as indium (In), tin (Sn), gallium (Ga), magnesium (Mg), beryllium (Be), molybdenum (Mo), vanadium (V). ), Copper (Cu), iridium (Ir), rhodium (Rh), ruthenium (Ru), tungsten (W), cobalt (Co), nickel (Ni), manganese (Mn), lanthanum (La) Flip chip type nitride-based light emitting device characterized in that it comprises at least one component selected from among them. The flip chip type nitride based light emitting device according to any one of claims 2 to 4, wherein an addition ratio of the additive element to the main component of the interfacial modification layer is 0.001 to 50 weight percent. The flip chip type nitride-based light emitting device of claim 1, wherein the interface modification layer is formed to a thickness of 0.1 nanometers to 10 nanometers. The method of claim 1, further comprising an insertion metal layer formed between the interface modification layer and the transparent conductive thin film layer, The intercalation metal layer includes zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), beryllium (Be), iridium (Ir), and ruse Flip chip type nitride-based light emitting device, characterized in that formed with a thickness of 1 nanometer to 100 nanometers with at least one component selected from nium (Ru), molybdenum (Mo). The method of claim 1, The transparent conductive thin film layer is formed of any one of a transparent conductive oxide (TCO) and a transparent conductive nitride (TCN), The transparent conductive oxide may be indium (In), tin (Sn), zinc (Zn), gallium (Ga), cadmium (Cd), magnesium (Mg), beryllium (Be), silver (Ag), molybdenum (Mo), Vanadium (V), Copper (Cu), Iridium (Ir), Rhodium (Rh), Ruthenium (Ru), Tungsten (W), Cobalt (Co), Nickel (Ni), Manganese (Mn), Palladium (Pd) At least one component selected from platinum (Pt) and lanthanum (La) -based metals and oxygen (O) formed therein; And the transparent conductive nitride comprises titanium (Ti) and nitrogen (N). The flip chip type nitride-based light emitting device of claim 1, wherein the transparent conductive thin film layer is formed to a thickness of 10 nanometers to 1000 nanometers. The method of claim 1, wherein the reflective layer is silver (Ag), silver oxide (Ag ₂ O), aluminum (Al), zinc (Zn), titanium (Ti), rhodium (Rh), magnesium (Mg), palladium (Pd) ), At least one material selected from ruthenium (Ru), platinum (Pt), iridium (Ir), an alloy containing the at least one selected material, or any one of a solid solution, a flip chip type nitride-based light emitting device characterized in that . The flip chip type nitride-based light emitting device of claim 10, wherein the reflective layer is formed to a thickness of 100 nanometers to 1000 nanometers. In the method of manufacturing a flip chip nitride light emitting device having an active layer between an n-type cladding layer and a p-type cladding layer, end. Interface modification layer including at least one oxide selected from indium oxide, tin oxide and zinc oxide on the p-type cladding layer of the light emitting structure in which the n-type cladding layer, the active layer and the p-type cladding layer are sequentially stacked on the substrate Forming a; I. Forming a transparent conductive thin film layer of a transparent conductive material on the interface modification layer; And All. Forming a reflective layer on the transparent conductive thin film layer; la. And heat-treating the structure formed through the multi-steps. The method of claim 12, further comprising: heat-treating the reflective layer after the step B and before forming the reflective layer. The method of claim 12, Before forming the transparent conductive thin film layer, zinc (Zn), indium (In), tin (Sn), nickel (Ni), magnesium (Mg), gallium (Ga), copper (Cu), and beryllium (Be) on the interface modification layer. Forming an insertion metal layer with at least one or more components selected from iridium (Ir), ruthenium (Ru), molybdenum (Mo); manufacturing method of a flip-chip nitride light emitting device further comprising a.

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