TW201234647A - Illumination device, forming method of transparent conductive film, manufacturing method of the illumination device and electrical machine - Google Patents

Abstract

The present invention can achieve an illumination device which can improve the semiconductor lamination layer structure of illumination constituted zone and the sealing of the transparent conductive film on the top and reduce the contact resistance. In the illumination device, P type GaN layer 16 of semiconductor lamination layer structure of illumination device is formed on the sapphire substrate 11 by the following way. The carbon containing ratio compared with all elements on the surface of P type GaN surface is 10% to 30%, and the oxygen containing ratio compared with all elements on the surface of P type GaN surface is 10% to 25%, and ITO film 17 is formed on the top of P type GaN layer 16.

Description

201234647 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting device, a method of forming a transparent conductive film, a method of manufacturing the light-emitting device, and an electrical machine, and more particularly to a GaN transparent film and a substrate thereof Improvement in contact resistance and adhesion of the film. [Prior Art] A gallium nitride-based compound semiconductor is used as a semiconductor material for a short-wavelength light-emitting device such as a light emitting diode (LED) or a semiconductor laser (LD, laser diode). In these light-emitting devices, a structure in which a gallium nitride-based compound semiconductor thin film is laminated on a substrate is generally employed. In a light-emitting device such as an LED including a semiconductor material as described above, in order to lower the forward voltage, it is necessary to obtain a good ohmic contact between the semiconductor material and the electrode layer. In the prior LED, an electrode layer including butyl 1 and A is formed on the n-type nitride-based semiconductor layer, and an electrode layer including bismuth and argon is formed on the p-type nitride-based semiconductor layer. Good ohmic contact. However, when the electrode layer is formed on the nitride-based semiconductor layer, it is difficult to form an alloy between the nitride-based semiconductor layer and the metal, and the adhesion between the electrode layer and the vapor-based semiconductor layer is lowered. Due to &, there is a problem that the electrode layer is likely to be peeled off during the manufacturing process. As a result, there is a problem that it is difficult to improve the reliability of the component. Therefore, in the method of forming a nitride-based semiconductor device, the method of forming a nitride-based semiconductor device is performed by heat-treating a nitride-based semiconductor layer to remove nitrogen 160106.doc 201234647 = moisture on the surface of the semiconductor layer, and the rabbit is cleaned. Thereby, the surface of the nitride-based semiconductor layer and the electrode layer is raised. The adhesion between the bulk layer and the electrode layer can be improved between the nitride-based semiconductor layer and the electrode layer, and the electrode layer can be prevented from being peeled off. As a result, the nitride-based semiconductor device can be reliably used. Sexual improvement. 'System 2::: Text (4) reveals the following method: for the production of high-quality gallium nitride-based character semiconductor thin films on substrates used for gallium nitride 'conductors, by 杳 而 而 土Wu Feng Zeng. 4 'Tooth' is attached to the organic matter on the surface of the substrate, and is used as a substrate, except for ordinary sapphire, (4), w, GaAS, and the like. In addition to the sapphire, it is also possible to use a semiconductor laminated structure constituting the light-emitting device on the substrate to be cleaned as described above in the Japanese Patent Publication No. 5 φ, Sister-'Silk 2 _No. By. +Fig. 8 is a cross-sectional view showing a light-emitting device including a gallium nitride-based compound semiconductor. The illuminating device is finely formed on the surface of the sapphire substrate to form a (four) layer of the earth plate 206. The substrate 2〇6 is cleaned by, for example, solvent naphtha, followed by acetone cleaning, and then washed by isopropyl alcohol. Finally, it is cleaned by pure water. Further, the light-emitting device 200 has a laminated structure in which a first cladding layer 207 is formed on the substrate 206 and contains GaN doped with .Si. 5 is a 95 Ν second cladding layer 208, and the luminescent layer 209 ′ is formed on the second cladding layer 〇8 and includes a single quantum well structure containing 160106.doc 201234647 undoped Ino.uGao. An intermediate layer 21 〇 is formed on the luminescent layer 209 and includes undoped GaN; and a 卩-type cladding layer 211 ′ is formed on the intermediate layer 21 , and includes doped

Al0.05Ga0.95N. The light-emitting device 200 further includes a light-transmitting electrode 212 formed on the laminated structure and having a laminate of nickel (Ni) and gold (Au); and a p-side electrode 214 formed on the light-transmitting electrode 212; And an n-side electrode 213 formed on an exposed portion of the first n-type cladding layer 207. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. 2007-201495 [Patent Document 2] However, in the element structure of the conventional light-emitting device 200, the light-transmitting electrode 212 is such that the current density supplied from the n-side electrode 213 to the light-emitting layer 209 of the laminated structure becomes in the surface of the light-emitting layer. Uniformly designed, the light-emitting device 200 has the following problems: the adhesion or contact resistance of the light-transmitting electrode 212 to the ρ-side electrode 214 thereon, and the shape of the light-transmitting electrode 212 and the semiconductor layer on the lower side thereof. The adhesion or contact resistance of the cladding layer 2丨1 greatly affects the characteristics of the device, especially if the light-transmitting electrode 212 having a large contact area and the p-type cladding layer 2n on the lower side thereof have poor adhesion, resulting in light transmission. Since the electrode 212 is easily peeled off, the characteristics of the element are impaired due to an increase in contact resistance, so that the driving current of the light-emitting device, particularly the light-emitting device, is not obtained and has good characteristics. It may be the low current drive light emitting device. The present invention has been made to solve the above problems, and an object of the invention is to provide a light-emitting device and a method for forming a transparent conductive film which can reduce the contact resistance of a semiconductor laminated structure constituting a light-emitting region and a transparent conductive film formed thereon. A method of manufacturing the light-emitting device and an electric device equipped with the light-emitting device capable of driving at a low current rate having the excellent characteristics. [Means for Solving the Problem] The light-emitting device of the present invention has a laminated structure including a plurality of III-V compound semiconductor layers formed on a substrate, and includes a GaN layer constituting the laminated structure, and is formed thereon a transparent conductive film on a GaN layer having a structure in which a ratio of a carbon atom on a surface thereof is 1% to 3% by weight with respect to a sum of ratios of all elements present on the surface, thereby achieving the above object . The light-emitting device of the present invention has a light-emitting device formed on a substrate and having a laminated structure of a plurality of ΠΙ-V-group compound semiconductor layers, including a GaN layer constituting the laminated structure and transparent conductive formed on the GaN layer That is, the GaN layer has a structure in which the ratio of the oxygen atoms on the surface thereof is 1% to 25% with respect to the sum of the ratios of all the elements present on the surface, thereby achieving the above object. The light-emitting device of the present invention is a light-emitting device having a laminated structure including a plurality of bismuth-V compound semiconductor layers formed on a substrate, including a GaN layer constituting the laminated structure and transparent conductive formed on the edge GaN layer The film 'the GaN layer is formed by the way that the rough longitude of the surface is expressed in the range of 0.35 nm to 0.45 nm in the range of 160106.doc -6 · 201234647 line average sipe in the index indicating the morphology. purpose. The light-emitting device of the present invention is a light-emitting device having a laminated structure including a plurality of III-V compound semiconductor layers formed on a substrate, comprising a GaN layer constituting the laminated structure, and a transparent conductive film formed on the GaN layer The GaN layer is formed such that the roughness of the surface is in the range of 0.45 nm to 0.6 nm in terms of the root mean square roughness RMS (R〇〇t Mean Square) indicating the index of the morphology. purpose.

Preferably, in the above light-emitting device, the GaN layer is a psGaN layer. Preferably, in the above light-emitting device, the transparent conductive film is an indium tin oxide (ITO) tin oxide film (Indium Tin Oxide) film. The method for forming a transparent conductive film of the present invention is a method for forming a transparent conductive film on which a transparent conductive film is formed by epitaxial growth on a GaN layer on a base semiconductor layer, and includes: after the GaN layer is grown on the base semiconductor layer, The condition that the 6-H GaN layer satisfies the ratio of the ratio of the carbon atoms on the surface to the sum of all the elements present on the surface becomes 1〇% to 3〇%, or the ratio of the oxygen atoms on the surface thereof (4) Performing a 'month wash process' for at least one of the conditions of 1% to 25% of the total ratio of all the elements present on the surface; and after the cleaning process, the GaN layer is performed The step of drying; thereby achieving the above object. In the above method for forming a transparent conductive film, the present invention preferably comprises the step of annealing the GaN layer after the GaN layer is grown by the insect crystal. Preferably, in the method for forming the transparent conductive film, the step of drying the layer (I) of I60106.doc 201234647 is performed by drying the g by blowing in the atmosphere. In the method for forming a transparent conductive film, the step of drying the GaN layer is performed by using the (10) layer of the isopropyl material. The method for forming the transparent conductive film of the present invention is based on the GaN layer in which the insect crystal grows on the conductor layer of the substrate bucket. A method of forming a transparent conductive film forming a transparent conductive film includes: after the GaN layer is grown on the base semiconductor layer, the GaN layer satisfies the roughness of the surface thereof to indicate an index of the morphology, and the average roughness Ra of the core line The roughness of the surface in the range of 〇.35 nm~〇45(10) or the roughness of the surface thereof is at least one of the conditions of the range of 〇.45 nm~〇.6(10). The TEM layer is dried in a low-condition manner (4); and after the cleaning treatment, the GaN layer is dried; thereby achieving the above object. The method for manufacturing a light-emitting device according to the present invention is the method for manufacturing a light-emitting device according to (1), and comprising: a step of forming an iππ-ν compound semiconductor layer on an insulating substrate; forming on the compound semiconductor layer of the πι_ν compound a step of constituting the light-emitting device and comprising an element structure of a plurality of m-v compound semiconductor layers; and a step of forming a transparent electrode film on the device structure; and the step of forming the device structure includes: epitaxially growing the GW layer on the substrate a step on the half (four) layer; a condition that the growth (10) layer satisfies the ratio of the carbon atoms on the surface thereof to the ratio of all the elements present on the surface, i〇% to 3〇%, or a step of performing a cleaning treatment in such a manner that at least one of the ratio of the oxygen atoms on the surface to the ratio of all the elements present on the surface, and the sum of the examples I60i06.doc 201234647 becomes 1% to 25%; And after the cleaning treatment, the step of drying the GaN layer; thereby achieving the above object. The method for producing a light-emitting device of the present invention is a method for producing a light-emitting device using a ΠΙν-group compound semiconductor, and comprising: a step of forming a πι-ν compound semiconductor layer on an insulating substrate; forming the composition on the m-v compound semiconductor layer a step of illuminating the device and comprising a plurality of III-V compound semiconductor layers; and forming a transparent electrode film on the device structure, and forming the device structure comprises: epitaxially growing the layer on the base semiconductor layer The step of arranging the epitaxially grown GaN layer to satisfy the roughness of the surface thereof to indicate the morphological index of the center line average roughness Ra in the range of 0 35 nm to 〇·45 nm, or the surface rough sugar thereof And the step of cleaning the method according to at least one of the conditions of the root mean square crude sugar rms of the indicator of the non-morphological value in the range of 0_·45 nm to 0.6 nm; and after the cleaning process, The step of drying the GaN layer; thereby achieving the above object. Preferably, the invention is a step of annealing the GaN layer after the GaN layer is grown in the method for fabricating the light-emitting device.

Preferably, in the manufacturing method of the light-emitting device, the step (4) of drying the drying step is performed by drying the N2 in the atmosphere, preferably in the manufacturing method of the light-emitting device. The GaN layer is soldered and the GaN layer is dried. The GaN layer is dried by using isopropyl alcohol. The electric machine is an electric machine including a light source, which is obtained by the above-mentioned light-emitting device of the present invention. The role will be described below. In the present invention, the light-emitting device includes a GaN layer constituting a laminated structure including a light-emitting region, and a transparent conductive film formed on the GaN layer, the GaN layer having a ratio of carbon atoms on a surface thereof with respect to all existing on the surface a structure in which the sum of the ratios of the elements is 丨0% to 3〇%, or a structure in which the ratio of the oxygen atoms on the surface is 10% to 25% with respect to the sum of the ratios of all the elements present on the surface, Therefore, the contact resistance of the semiconductor laminated structure constituting the light-emitting region and the transparent conductive film formed thereon can be lowered. Further, in the present invention, after the GaN layer is grown on the base semiconductor layer, the ratio of the ratio of the carbon atoms satisfying the surface of the GaN layer to all the elements present on the surface becomes 1〇. Cleaning under the condition of %~3〇%, or at least one of the conditions of the ratio of the oxygen atom on the surface to the sum of all the elements present on the surface being 1% to 25% Therefore, the contact resistance of the semiconductor laminated structure constituting the light-emitting region and the transparent conductive film formed thereon can be lowered. Further, in the present invention, the cleaning treatment of the GaN layer is carried out at a low temperature lower than the boiling point by organic cleaning, so that the hydrocarbon can be prevented from being fixed on the cleaning surface of the layer. Further, the surface of the GaN layer is cleaned by an acid, a test, or an organic solvent, whereby a specific amount of carbon and oxygen can be disposed. [Effects of the Invention] As described above, according to the present invention, it is possible to obtain a light-emitting device and a transparent conductive film which can reduce the contact resistance of the semiconductor laminated structure constituting the light-emitting region and the transparent conductive film formed thereon. A forming method, a method of manufacturing the light-emitting device, and an electric device equipped with the light-emitting device capable of driving at a low current having the excellent characteristics. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) Fig. 1 is a view showing a light-emitting device according to an embodiment of the present invention, and shows a cross-sectional structure of the light-emitting device. The light-emitting device of the first embodiment (hereinafter also referred to as a semiconductor light-emitting device) includes a sapphire substrate (insulating substrate) n, and an Ain film formed on the sapphire substrate 11 as a buffer layer for mitigating lattice mismatch. 12; and an undoped GaN layer 13 formed on the A1N film 12. The semiconductor light-emitting device 10 has a build-up structure formed on the undoped layer 13 to form a multiple quantum well layer 15 on the n-type GaN layer 14 to form a light-emitting region on the p-type GaN layer 16. A structure in which a layer is formed between the two GaN layers. The multiple quantum well layer 15 has a structure in which a GaN layer 15a as a barrier layer and an InGaN layer 15b as a well layer are alternately laminated. The p-type GaN layer 16 is adjusted so that the carbon concentration on the surface thereof is in the range of 10% to 30% by the cleaning treatment after the growth, and the oxygen concentration on the surface thereof is in the range of 10% to 25%. Further, the oxygen concentration and the carbon concentration are measured in a range from the surface of the p-type GaN layer to a depth of about 3 to 4 μm. I60106.doc 201234647 Here, the carbon concentration and the oxygen concentration respectively indicate that the above p The various elements included in the type Gw layer ,6, specifically, the sum of the contents of Ga, Mg, 〇, and C (the number of atoms) is the content ratio of the carbon element and the oxy- octane at 100%. In the calculation of the ratio, the XPS method is used (X-ray ph〇t Elect_ Spectrosc〇py, X-ray photoelectron (4) method. The XPS method uses photo-electric effect to release photoelectrons from the surface to vacuum + by observing x-rays on the surface of the sample under ultra-high vacuum, and observing the kinetic energy of the photoelectrons. Obtaining the information related to the elemental composition. Specifically, the element existing on the surface of the object f can be identified or quantified based on the analysis result of the photoelectron energy spectrum. Further, the depth direction can be performed by using the ion button together. Further, a transparent film (transparent conductive film) 17 having conductivity is formed on the entire surface of the P-type GaN layer 16 adjusted to the oxygen-to-carbon ratio of the surface in the above manner. The transparent conductive film is used. Including an indium tin oxide film, the transparent conductive film 17 is formed on the core layer 16 such that the current density from the electrode formed thereon becomes in the plane of the p-type core layer 16. Further, the upper electrode 18b is disposed on the ITO film 17, and the exposed portion of the ITO film 17, the p-type GaN layer 16, and the multiple quantum well layer 15 of the n-type GaN layer 14 is formed with a lower portion. 18a. The upper electrode i8b and the lower electrode 18a have a laminated structure in which an Au layer is formed on the susceptor layer via a pt layer. However, the electrode structures may be formed by forming an Au layer on the layer. 4' or a laminated structure in which an Au layer is laminated on the Ni layer. The following is a description of the manufacturing method of the light-emitting device of the first embodiment. 160l06.doc 12 201234647. First, 'sputtering on the sapphire substrate 11 On the other hand, the AIN film 12 is formed as a buffer layer to have a thickness of, for example, about 300 angstroms. Next, the undoped GaN layer 13 is formed on the AIN film 12 to a thickness of about 6 to 7 μm by MOCVD (metal organic chemical vapor deposition) treatment. Thereafter, on the undoped GaN layer 13, 'the shape 14 is formed, the multiple quantum well layer 15 as the light-emitting layer, and the p-type GaN layer are sequentially formed by epitaxial growth. Here, the multiple quantum well layer 15 will The GaN layer 15a as a barrier layer is formed by alternately laminating the inGaN layer 15b as a well layer. Next, the surface of the p-type GaN layer 16 is cleaned, and then the ITO film 17 is formed on the p-type GaN layer 16. Forming an upper electrode 18b on the ITO film 17, and forming a lower electrode on the n-type GaN layer exposed by selectively removing the ITO film 17, the p-type GaN layer 16, and the multiple quantum well layer 15 18a. The process of cleaning the p-type GaN layer will be described in detail below. First, the cleaning device will be briefly described. Fig. 2 is a schematic view showing the configuration of the cleaning device used in the cleaning process. The cleaning device 100 includes a cleaning tank 101 for performing a cleaning process, and a casing 100a for accommodating the cleaning tank ιοί; a cleaning liquid supply pipe 102a for using a chemical or pure water as a cleaning liquid from the outside of the casing Supply to the cleaning tank 101; cleaning The discharge pipe 10b is discharged from the cleaning liquid used in the cleaning tank ι〇1 in the casing 100a; and the wafer, I60I06.doc 13 201234647, which is used for accommodating the wafer wf and accommodating the crystal The round Wf is immersed in the cleaning tank 1〇1. Further, a cover member 100b for preventing the cleaning liquid from scattering is attached to the upper surface of the casing 10a, and is provided on the lower surface of the casing 100a to be The discharge port 1 〇 2c discharged from the cleaning liquid F overflowing from the 3 清洗1 washing tank F. Next, the step of forming the P-type GaN layer 16 which is formed on the sapphire substrate from the laminated structure to the cleaning of the p-type GaN layer Fig. 3 is a view for explaining a cleaning process in the manufacturing process of the light-emitting device according to the first embodiment of the present invention, and shows a semiconductor laminated structure to be cleaned before the transparent conductive film is grown. The cleaning process step in the manufacturing process of the light-emitting device according to the first embodiment of the present invention is described, and the growth of the P-type GaN layer as the underlying layer of the transparent conductive film and the subsequent processes are shown in the order of processing.

As described above, on the undoped GaN layer 13 which is the underlying layer of the above-mentioned laminated structure, the n-type GaN layer 14 and the multiple quantum well layer 15 are sequentially epitaxially grown, and the (3) layer is called the step-by-step type. (10) Layer annealing treatment (step S2). Subsequently, the cleaning process of the p-type layer 16 is performed (step S3), and the cleaning process is performed using the cleaning device 1 shown in Fig. 2. For example, 'for the cleaning tank 1 of the cleaning device shown in FIG. 2 (the hydrogen-acid solution of the U-degree is supplied as the cleaning liquid, and the hydrofluoric acid solution supplied to the cleaning unit is overflowed by several means) Discharged from the cleaning tank HH, in this state, the temperature of the hydrofluoric acid solution in the cleaning tank 101 is maintained at a specific temperature, and as shown in FIG. 3, a semiconductor laminate structure 160106.doc 14 201234647 stone substrate is formed ( The wafer 11 is housed in the crystal E103, and is immersed in the gas acid solution in the cleaning bath 1〇1 for a specific time to perform a washing treatment on the surface of the P-type GaN layer 16. 'As described above, by hydrogen After the surface of the ?-type Ga]S^16 is cleaned by the fluoric acid solution, the surface of the p-type GaN layer 16 is subjected to Used to rinse chlorine acid: Washed and then dried.

In the drying treatment, there is a drying treatment such as drying (i.e., drying with isopropyl alcohol) or blowing drying (atmospheric drying) using IPA (is〇-pr〇pyI alcoho isopropanol) of the above organic solvent. Fig. 5 is a view showing the characteristics of the light-emitting device according to the first embodiment of the present invention. Fig. 5 shows the relative value of the contact resistance with respect to the carbon concentration and the oxygen concentration of the surface of the p-type (10) layer which is the underlying layer of the transparent conductive film. Here, the thick curve indicates the relative value of the contact resistance with respect to the carbon inversion, and the thin curve indicates the relative value of the contact resistance with respect to the oxygen concentration. «This Fig. 5 shows that the contact resistance of the semiconductor laminate structure constituting the light-emitting region and the transparent conductive film 17 (ITO film) formed thereon is at 25 when considering the carbon inversion of the surface of the layer (10). The vicinity of % becomes the minimum value. In addition, when the relative value of the contact resistance is set to Μ, the contact resistance (four) is about 4 times the minimum value "1" in the range of the carbon concentration of 10% to 3%. In the range of the carbonity of the range, the resistance of the f is substantially controllable within one of the last digits (the reference value χ1Ε·2) (the reference value x1E-l). 'When focusing on the oxygen concentration on the surface of the p-type GaN layer, the contact resistance of the semiconductor laminated structure constituting the light region of the I60106.doc -15·201234647 and the transparent conductive film 17 (the ruthenium film) formed thereon is The oxygen concentration is a minimum value in the vicinity of 2%. Further, the relative value of the contact resistance is a magnification 〇 when the minimum value is "1", and further, the oxygen concentration is 10. /. ~25. /. In the range, the relative value of the contact resistance is about four times the minimum value "1", and the oxygen concentration in the range is substantially within one of the minimum value (reference value χ1Ε-2). The size of the reference value xlE·1. Thus, by setting the carbon concentration on the surface of the p-type GaN layer to a concentration in the range of 1% to 3%, the substantial resistance value at the time of focusing on the carbon concentration can be controlled to the minimum value (reference value). xlE·2) One digit (reference value xlFl). Further, by setting the oxygen concentration on the surface of the p-type GaN layer to a concentration in the range of 1% to 25%, the substantial resistance value at the time of focusing on the oxygen concentration can be controlled to the minimum value (reference value xlE_2). One digit (base value χ1Ε·ι). Further, Fig. 6 is a view showing characteristics of a light-emitting device according to an embodiment of the present invention, and shows a p-type with respect to a base layer as a transparent conductive film.

The relative value of the contact resistance of the surface state (morphology RMS [nm], morphology Ra [nm]) of the GaN layer. Here, RMS (root mean square roughness) is a value expressed by the square root of a value obtained by averaging the squares of deviations from the average line to the measurement curve. For example, when the measurement curve indicates the undulation of the ridge line from the measurement point A to the measurement point B, the average line is a straight line indicating the average height level of the ridge line. Further, Ra (center line average roughness) is obtained by folding the roughness curve from the center line and dividing the area obtained by the roughness curve and the center line by 160l06.doc 16 201234647 by the length L. "Value" Here, l is the length of the part to be measured, and the center line is a straight line indicating the average level of the area of the peak in the rough curve. According to FIG. 6, when focusing on the RMS (root mean square roughness) of the surface of the p-type GaN layer, the contact resistance of the semiconductor laminate structure constituting the light-emitting region and the transparent conductive film 17 (ITO film) formed thereon is obtained. The radius of 8 is 〇55 nm and becomes the minimum. Further, the relative value of the contact resistance is a magnification when the minimum value is set to "1". Further, in the range of RMS of 0.45 nm to 0_6 nm, the relative value of the contact resistance becomes a value which is about 4 times the minimum value "1", and in the range, the substantial resistance value can be controlled to the minimum value thereof ( The reference value χ1Ε·2) is within one digit of the number of bits (reference value xlE·1). Further, when focusing on the Ra (center line average roughness) of the surface of the p-type GaN layer, the contact resistance of the semiconductor layered structure constituting the light-emitting region and the transparent conductive film 17 (ITO film) formed thereon is at the ruler &; is the minimum value near 〇4〇nm. Further, the relative value of the contact resistance is the magnification when the minimum value is set to "丨". Further, in the range of Ra from 0.35 nm to 0.45 nm, the relative value of the contact resistance becomes about 4 times the minimum value "1", and in the Ra of the range, the substantial resistance value becomes the minimum value (reference value). χ1Ε.2) Within one of the digits (reference value xlE·1). Therefore, by setting the RMS of the surface of the p-type GaN layer to the target value of 0.45 nm to 0.6 nm, the substantial resistance value at the time of RMS can be controlled to the maximum value (reference value xlE2). One digit (reference value χ1Ε-ι) is within. Further, I60106.doc 17 201234647 by setting the Ra of the surface of the p-type Gan layer to a value in the range of 〇35 nm to 〇45 nm, the substantial resistance value at the time of Ra can be controlled to the minimum value thereof ( One of the reference values X1E·2) is within the reference value χ1Ε.1}. Therefore, the p-type germanium layer 16 formed on the sapphire substrate and formed into a semiconductor layer structure of the light-emitting device is set as its carbon. The content ratio is 10/.30% with respect to the content ratio of all the elements contained in the surface of the GaN-type GaN layer, and the oxygen content ratio is the same as that of the surface of the p-type GaN layer. The structure of the element is 5% to 2, and the contact resistance of the semiconductor laminate structure constituting the light-emitting region and the transparent conductive film 17 (IT film) formed thereon can be lowered, thereby providing good characteristics. The low-current-driven light-emitting device 又. The p-type GaN layer 16 having a semiconductor layered structure formed on the sapphire substrate 11 and forming the light-emitting device has a surface Ra of 0.35 nm to 〇45 nm. Range and RMS in the range of 〇45 nm~〇6 nm The surrounding structure can reduce the contact resistance of the semiconductor laminated structure constituting the light-emitting region and the transparent conductive film (ITO film) 17 formed thereon, thereby providing a low-current-driven light-emitting device having good characteristics. In the present embodiment, the p-type GaN layer 16 having a laminated structure including a light-emitting region and the ITO film 17 formed on the GaN layer are formed, and the ratio of carbon atoms on the surface of the GaN layer 16 is relatively present. The sum of the ratios of all the elements on the surface becomes 丨〇%~3〇%, or the ratio of the ratio of the oxygen atoms on the surface to the sum of all the elements present on the surface becomes 1%%~ With a structure of 25%, the contact resistance of the semiconductor laminate structure (the uppermost p-type GaN layer 16) constituting the light-emitting region and the transparent conductive film (ITO film) on which I60106.doc -18·201234647 is formed can be reduced. Further, the p-type GaN layer 16 is grown on the multiple quantum well layer 15 as the base semiconductor layer, and the ratio of the carbon atoms of the GaN layer to the surface thereof is relative to the surface. The sum of the ratios of all the elements becomes 10% to 30%, or the ratio of the ratio of the oxygen atoms on the surface to the sum of all the elements present on the surface becomes 1% to 25%. The cleaning process is performed in at least one condition, so that the contact resistance of the p-type GaN layer 16 constituting the light-emitting region and the IT germanium film 17 formed thereon can be reduced. Further, in the present embodiment, the p-type GaN layer is defective. The cleaning treatment of 7 is carried out at a low temperature lower than the boiling point by organic cleaning, so that the hydrocarbon can be prevented from being fixed to the cleaning surface of the p-type GaN layer. As described above, the surface of the p-type GaN layer is washed with an acid, an alkali or an organic solvent, whereby carbon and oxygen can be present in a specific amount on the surface of the ruthenium type (^(3) layer. Further, in the present embodiment, The p-type GaN layer 16 having a laminated structure including a light-emitting region and the ITO film 17 formed on the GaN layer have a rms (root mean square roughness) of the surface of the P-type GaN layer of 〇45 nm~ The structure of the value of the range of 〇·6 nm, or the structure of the ruler 3 (center line average roughness) of the surface is set to a value in the range of 0.35 nm to 0.45 nm, so that the semiconductor laminated structure constituting the light-emitting region is lowered (the most a contact resistance of the upper p-type GaN layer 16) and a transparent conductive film (IT〇 film) 17 formed thereon. Further, the p-type GaN layer 16 is grown on the multiple quantum well layer 15 as a base semiconductor layer, Thereafter, the surface of the GaN layer satisfies the RMS of the surface (both 160106.doc -19·201234647 square root thick chain) in the range of 〇·45(10) to 〇.6 nm. Line average rough degree) is at least one of the conditions of 〇35(10)~_:fan: The cleaning process is performed as a condition. Therefore, the contact resistance of the ITO layer 17 and the ITO film 17 formed thereon can be reduced. Further, in the first embodiment, the substrate of the m) film is formed. The semiconductor layer represents a p-type GaN layer 'but it may also be a (four) (four) layer. Further, in the above-described embodiment i, the lighting device or the like which uses the light-emitting device of the above-described embodiment as a light source will be briefly described. (Embodiment 2) FIG. 7 is a view showing a second embodiment of the present invention, in which a light-emitting device of the embodiment is used as a light source, and a light-emitting device is packaged by a prayer resin. The construction of the lamp. The lamp 10a includes a frame member (4) having a counter electrode, and the light-emitting device (7) of the above embodiment is fixed to the frame member F1 on one side, and the upper electrode 18b of the light-emitting device 1G is connected by a wire The frame member connected to the one side of the 'X' light-emitting device 1 is connected to the frame member of the other side by a wire. Moreover, the frame member and the light-emitting device 10 are entirely made of resin Rm. Covering to form a mold package. As described above, the present invention is exemplified using the preferred embodiments of the present invention, but the present invention is not limited thereto; t is explained in the embodiment. It is known that the present invention should only be patented. The scope of the application is explained by the scope of the application, and those skilled in the art will be able to carry out the equivalent scope according to the description of the invention and the technical common knowledge according to the specific description of the preferred embodiment of the present invention, 160106.doc -20 201234647. When it is known that the patent documents cited in the present specification are specifically described in the present specification with the contents themselves (4), the contents thereof can be cited as a reference for the present specification. [Industrial Applicability] The present invention is in the field of a light-emitting device, a method for forming a transparent conductive film, a method for producing a light-emitting device, and an electric device, and is capable of obtaining a semiconductor laminated structure constituting a light-emitting region and formed thereon. The light-emitting device for improving the contact resistance of the transparent conductive film, the method for forming the transparent conductive conductive material, the method for manufacturing the light-emitting device, and the low current driving device having the good characteristics BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing a light-emitting device according to an embodiment of the present invention, and showing a cross-sectional structure of the light-emitting device. FIG. 2 is an embodiment of the present invention. A schematic diagram of a rinsing apparatus used in the manufacture of a light-emitting device, and a schematic configuration thereof. FIG. 3 is a view for explaining a cleaning process in a manufacturing process of a light-emitting device according to an embodiment of the present invention, and shows The semiconductor laminate structure of the cleaning target before the growth of the transparent conductive film. FIG. 4 is an implementation of the present invention. The cleaning process steps in the manufacturing process of the light-emitting device of the state are described, and the growth of the p-type GaN layer as the underlying layer forming the transparent conductive germanium and the subsequent processing are shown in the order of processing. 160106.doc 201234647 The characteristics of the light-emitting device according to the first embodiment of the present invention are described as 'the relative value of the contact resistance of the carbon concentration and the oxygen concentration on the surface of the p-type GaN layer which is the underlying layer of the transparent conductive film. The graph of the characteristics of the light-emitting device according to the first embodiment of the present invention is shown in FIG. 2 and shows the surface state (morphology RMS [nm] 'morphology Ra [nm]) of the p-type GaN layer as the underlying layer as the transparent conductive film. Fig. 7 is a view showing a lighting device in which the light-emitting device of the first embodiment is used as a light source as a second embodiment of the present invention, and shows a structure of a lamp obtained by encapsulating a light-emitting device with a mold resin. Fig. 8 is a view for explaining the structure of a light-emitting device disclosed in Patent Document 2. [Main component symbol description] 10 10a 11 12 13 14 15 15a 15b 16 17 18a Semiconductor light-emitting device lamp sapphire substrate (insulating substrate) A1N film undoped GaN layer n-type GaN layer multiple quantum well layer GaN layer (barrier layer )

InGaN layer (well layer) P-type GaN layer transparent conductive film (ITO film) Lower electrode 160106.doc -22- 201234647 18b Upper electrode 100 Cleaning device 100a Housing 100b Cover member 101 Cleaning tank 102a Cleaning liquid supply tube 102b Cleaning liquid discharge Tube 102c discharge port 103 wafer 200 light-emitting device 206 substrate 207 first cladding layer 208 second cladding layer 209 light-emitting layer 210 intermediate layer 211 P-type cladding layer 212 light-transmitting electrode 213 η-side electrode 214 ρ-side electrode F Cleaning fluid FI, F2 Frame member Rm Molding resin W1, W2 Wiring Wf Wafer 160106.doc •23-

Claims (1)

201234647 VII. Patent Application Range: 1. A light-emitting device having a laminated structure formed on a substrate and comprising a plurality of III-V compound semiconductor layers, and comprising: a GaN layer 'which constitutes the laminated structure; and transparent a conductive film formed on the GaN layer; and the GaN layer has a structure in which a ratio of carbon atoms on a surface thereof is 10% to 30% with respect to a total of ratios of all elements present on the surface. 2. A light-emitting device having a laminated structure formed on a substrate and comprising a plurality of III-V compound semiconductor layers, and comprising: a GaN layer 'which constitutes the laminated structure; and a transparent conductive film formed on the On the GaN layer; and the GaN layer has a structure in which the ratio of the oxygen atoms on the surface thereof is 1% to 25% with respect to the sum of the ratios of all the elements present on the surface. 3. A light-emitting device having a laminate structure formed on a substrate and comprising a plurality of III-V compound semiconductor layers, and comprising: a GaN layer 'which constitutes the laminate structure; and a transparent conductive film formed on On the GaN layer; and the GaN layer is formed such that the roughness of the surface thereof is in the range of 0.35 nm to 0_45 nm in terms of the center line average roughness Ra of the index indicating the morphology. A light-emitting device having a laminate structure formed on a substrate and comprising a plurality of III-V compound semiconductor layers, and comprising: 160106.doc 201234647 GaN layer constituting the laminate structure; and a transparent conductive film, It is formed on the GaN layer; and the GaN layer is formed such that the roughness of the surface thereof is in the range of 0.45 nm to 0.6 nm in terms of the root mean square roughness RMS of the index indicating the morphology. The light-emitting device according to any one of claims 1 to 4, wherein the GaN layer is a p-type GaN layer. 6. The light-emitting device of any one of claims 1 to 4 wherein said transparent conductive film is a ruthenium TO film comprising indium tin oxide. A method for forming a transparent conductive film, which is formed by forming a transparent conductive film on a GaN layer epitaxially grown on a base semiconductor layer, and comprising: after growing the GaN layer on the base semiconductor layer, The layer is provided to satisfy the sum of the ratio of the carbon atoms on the surface to the ratio of the total of the elements present in the surface. ~ Qing. The condition, or the cleaning process is performed in such a manner that at least one of the conditions of the ratio of the oxygen atoms on the surface to the ratio of all the 7-degree elements present on the surface becomes 1% to 2 5 〇/〇. Steps; and After the kel/month wash treatment, the GaN layer is dried. 8. The method of forming a transparent conductive germanium film according to claim 7, wherein the step of annealing the (four) layer is performed after the GaN layer. 9.: Please: The method of forming the transparent conductive film of item 8, which makes the step of drying on the _ late drying and the mountain #9: drying the N2 in the atmosphere and drying it (the jaN layer i is less. 1 〇· request A method of forming a transparent conductive film of item 8, wherein the step of drying the GaN layer 160I06.doc 201234647 is a step of drying the GaN layer using isopropyl alcohol. A method of forming a transparent conductive film, the mites grow on the substrate half a day Forming a transparent conductive layer on the GaN layer on the layer, and including: after the GaN layer is grown on the base semiconductor layer, the GaN layer satisfies the roughness of the surface thereof to represent the center line average of the morphological index The crude sugar Ra meter is in the range of 〇.35 nm~〇45(10): the condition, or the roughness of the surface thereof is in the range of 0.45 nm to 〇·6 nm in terms of the RMS of the root mean square roughness of the index indicating the morphology. a step of performing a cleaning process in at least one condition; and a step of drying the GaN layer after the cleaning process. 12. A method of manufacturing a light-emitting device using a (4) compound semiconductor to manufacture a light-emitting device And a method comprising: forming a gamma compound semiconductor layer on an insulating substrate; forming a component structure constituting the light emitting device and comprising a plurality of mv compound semiconductor layers on the (IV)-V compound semiconductor layer; And the step of forming a transparent electrode film on the device structure; and the step of forming the device structure comprises: a step of growing the GaN layer on the base semiconductor layer; and the GaN layer growing on the worm ± e 乂 is satisfied that the ratio of the proportion of carbon atoms on the surface to the ratio of all 7L of the elements present on the surface is 10% to 30. / ❶, or the ratio of oxygen atoms on the surface is relatively a step of performing a cleaning treatment in such a manner that at least one of the conditions of 10 〇 / 〇 to 25% is present in the sum of all the proportions of the singular surface of the smectic surface; and 160106.doc 201234647 After the cleaning treatment, the GaN layer is dried. 13 A method of manufacturing a light-emitting device, which uses an In_v compound semiconductor to manufacture a light-emitting device And a method comprising: forming a III-V compound semiconductor layer on an insulating substrate; forming a light-emitting device on the III-V compound semiconductor layer and comprising a plurality of III-V compound semiconductor layers a step of constructing a component and a step of forming a transparent electrode film on the device structure; and the step of forming the device structure comprises the steps of: epitaxially growing a GaN layer on the base semiconductor layer; and growing the epitaxial GaN The layer satisfies the roughness of the surface to indicate the morphological index of the center line average roughness Ra in the range of 〇35 nm to 〇45 nm, or the roughness of the surface thereof to represent the root mean square of the morphological index The roughness RMS meter is in the range of 〇_45 nm to 〇6 nm:: a step of performing a cleaning treatment in at least one of the conditions; and a step of drying the GaN layer after the cleaning treatment. The method of manufacturing a light-emitting device according to claim 12 or 13, comprising the step of annealing the GaN layer after epitaxially growing the GaN layer. The method of manufacturing the light-emitting device of claim 14, wherein the step of drying the layer (4) is a step of drying the layer (4) by blowing N2 in the atmosphere. The method of producing a light-emitting device according to claim 14, wherein the step of drying the layer (4) is a step of drying the GaN layer using isopropyl alcohol. 17_Electrical machine|§ ' is a person who includes a light source, and the light source includes the light-emitting device of any one of claims 1 to 4. 160106.doc