200832120 九、發明說明： “ 【發明所屬之技術領域】 —本發明係涉及-料熱板，制係關於—觀於為電 子元件進行散熱之均熱板及散熱裝置。 【先前技術】 諸如電腦中央處理器、北橋晶片、發光二極體等高功 率電子元件朝向更輕薄短小以及多功能、更快速運行之趨 • 勢發展，其在運行時單位面積所產生之熱量也隨之愈來愈 多’該等熱量如果不能被及時有效地散去，將直接導致溫 度急劇上升，而嚴重影響到發熱電子元件之正常運行。為 此，需要散熱裝置來對該等電子元件進行散熱。 、最典型之散熱裝置是使發熱電子元件肖配有風扇之縛 2式散熱器接觸通過熱傳導達成散熱目的，為應較高熱通 里(heatflux)之移除，在發熱電子元件與散熱器之間通常加 _ 裝具有良好熱傳導性之均熱板(heat spreader)，該散熱器 通常較發熱電子元件之面積大，因此該均熱板之作用是將 發熱電子元件產生之熱量在傳到散熱器之前先均勻分佈， 以充分發揮散熱器之效能，該均熱板可使用銅、鋁等較高 熱導係數之金屬材料，但金屬板受制於材料本身有限之熱 傳導性，若對高熱通量之發熱電子元件或者使用較大之均 熱板面積來實現熱量均勻分佈時，仍會產生明顯之熱阻而 無去達到良好均熱分佈之預期目的，以致散熱裝置之整體 散熱效率不甚理想。 【發明内容】 200832120 下㈣越實施例說明—種熱阻較小從而 =妓時、有效地傳遞並散發料之均熱板及具有該 均熱板之散熱裝置。 之門2均熱板’包括—底板及—蓋板，所述底板與蓋板 形成-腔室，該腔室内填充有_1作流體，該腔 至内,有連胁所職板與蓋板之間ϋ細結構， 所述第毛細結構包括至少一納米碳管陣列。 =放熱裝置’由—散熱器與上述均熱板組合形成。 與習知技術相比，本發_用該均熱板内由納米碳管 陣列構成之毛細結構在縱向上所具有之高熱傳導性能將發 ^電子元件職生之·及時地傳遞至散·，並同時結 。均熱板内之工作越之相變化作用而具有之良好橫向熱 傳導特性，從喊賴4、熱阻之功效，有效解決高發熱量 電^件之散_題。同時，該毛域構還為冷凝後之液 體提供回流之毛細力以及為均熱板提供支撐作用。 【實施方式】 下面參照附圖，結合實施例對本發明作進一步說明。 如圖1所示，為本發明散熱裝置之第一實施例，包括一 均熱板10、貼設於該均熱板10下側之一電子元件20及位於 該均熱板10上侧之一散熱器30，其中該電子元件2〇可為電 腦中央處理器、北橋晶片、圖形視頻陣列或者發光二極體 等。. 該散熱器30由具高導熱性能之金屬，如銅、鋁等製成， 包括一平板型之基座31及從基座31向上延伸之複數散熱鰭 200832120 片32，所述散熱益30可提供一較大之散熱面積將電子元件 ^ 20產生之熱量及時地散發至環境中。 • 如圖2及圖3所示，該均熱板1〇包括一底板12、一蓋板 14及设於該底板1〇與蓋板14之間之毛細結構15。該底板η 與蓋板14由銅、鋁或者其他具有高導熱係數之材料製成， 且均呈平板狀，該蓋板14之周邊部分垂直向下彎折一定高 度形成一側壁142，該侧壁142之末端向外彎折沿水準方向 _ 延伸形成一折邊部140，該折邊部140之週邊尺寸與底板12 相當，通過將該折邊部14〇與底板12之周邊12〇焊接固定， k而於底板12與蓋板14之間形成一密閉之腔室11。該腔室 11内一般被抽至一定之真空狀態，且填充有低沸點工作流 體，如水、酒精等，從而利用工作流體之相變化達到快速 傳熱與均熱之目的。該毛細結構15包括連接底板與蓋板 14之間之7個納米碳管陣列151，該等納米碳管陣列151均 主長方體狀’其南度等於或略大於腔室ϋ之高度。所述納 Φ 米碳管陣列151等間隔之平行排布於該腔室η内，分別與底 板12與蓋板14相互抵壓固定。為進一步固定該納米碳管陣 列151，也可於該底板12與蓋板14之内侧壁面上對應于納 米碳管陣列151之位置開設相應大小之槽道，從而將納米碳 管陣列151之兩端分別收容固定於槽道内。 本實施例中，為形成該毛細結構15中納米碳管陣列 151，.言先採用化學氣相'"l積法（Chemical Vapor Deposition，CVD)在一基板，如矽基板（Si substrate)或 者純銅基板（copper substrate)上在催化劑之作用下生長 8 200832120 形成該納米碳管陣列151，目前，現階段之納米碳管生長技 • 術已可達毫米（mm)級。之後，將帶有納米碳管陣列151之 * 基板置於可抽真空之容器中對其進行抽真空，使納米碳管 陣歹〗151中之空氣排出，然後將該納米碳管陣列置入純 水中，使納米碳管陣列151中之空隙由水填充，再將之置於 可使水凝固之低溫環境中使納米碳管陣列15i中之水凝固 為固恶，即可得到納米碳管陣列151整齊排布于水分子中之 • 複合材料，最後進行切割操作，按照所需高度沿垂直于納 米碳官陣列生長方向切割該複合材料，從而得到大量具有 預訂高度且長度均一之納米碳管陣列151。 目刖，業界製備納米碳管熱傳導材料之技術亦有採用 夕種不同之方式，比如清華大學專利申請公開第 200410026846.9號、第200410026778.6號揭露之製造步 驟為先生長納米碳管陣列，接著放入至由高分子材料，如 ㈣等組成之溶射，待目化後軸_，最後經由裁切 成適當高度而得到納米碳管陣列。本實施例也可採用上述 方法製備該毛細結構之納米碳管陣列151，然而由於腔 至11内填充有水或者酒精等工作流體，上述方法所製備之 納米奴官陣列需要再經由高溫而將内部之高分子材料去 除，如用石蝶作為高分子溶劑時，最後需要進行職步驟 將石蝶去除。實際上，為節省去除石蠟之步驟，可以用純 水替代所述高分子溶劑起到固化而方便切割操作，即利用 純水在低溫下固化而作為納米碳管陣列151之載體對其進 行裁切，這樣形成所述納米碳管陣列m後置入均熱板10 200832120 内時，不需要再進行除去石蠟之步驟。 操作¥該電子元件2〇貼在均熱板1〇之底板U之下表 • Φ，該底板12即辆熱板1G之吸熱面，㈣_1G之蓋板 則與散_狀她咖連接，為均熱_之散熱 面。納未碳管陣列151連接於均熱板1〇之底板12與蓋板Μ 之間。電子元件20工作時所產生熱量首先被底_吸收， 」後/、中邛分熱置經由底板12傳遞至腔室u内之工作流 ❿ 冑，由^工作流_祕_之液體，其吸紐快速蒸發 產生蒸汽’由於蒸氣在腔室助之_阻力幾乎可以忽 略，產生之療氣將迅速充滿整個腔室u，而當碰到均熱板 10之散熱面（即盘板U)時將再次冷卻成液體並沿著納米碳 管陣列151回流至底板12位置處而進入下一次迴圈，由於 納米碳管_151中間具社量通孔，可產生毛細作用力促 使冷部後之工作液體回流。眾所周知，當一流體發生相變 化％之熱傳係數通常是不發生相變化時之數十倍甚至數百 _ ❺，目此通過卫傾體之相變化可大幅提升熱量之傳遞效 率及擴散效率並能將電子元件所產生之熱量迅速均布於整 個腔室11。電子元件20之另外部分熱量則直接自底板12傳 導至納米碳管陣列151，經由納米碳管陣列151傳遞至蓋板 14，由於納米碳管在生長方向上之熱傳導係數為 3000〜6600W/m.k，從而在底板12與蓋板14之間形成高效 之傳熱路徑，大大減小了熱量從電子元件2〇由均熱板1〇傳 遞至政熱^§30間之熱阻，此部分熱量可直接經由納米石炭管 陣列151而快速地傳導至散熱器3〇並散佈至環境中，如此 200832120 極大地強化熱傳功能。 - 如圖4所示為第二實施例中之均熱板1()a，其與第一實 * 施中均熱板10之區別在於，該底板I2與蓋板u于形成腔室 11之内侧壁面上形成有另一毛細結構17。該毛細結構17為 多孔隙之網目（mesh)、纖維⑽㈦、微溝#(gfQQVe)、I 結粉末(sintered powder)或者以上各類型式之複合毛細結 構如圖5所不之第二實施例中，該毛細結構同樣也可由 藝 高熱料絲找米碳管_構成，#魅細結構17為由 納錢管陣列構成時，形成該毛細結構17之方法可以採用 與前述毛細結構15之形成方法相同，在此不再資述。 由於生長_碳管-般要在高達6{)()t：〜7⑻。c之高溫 下進行，當該底板12或蓋板14是由耐高溫材料，比如銅材 料製成時，形成該毛細結構17之方法射啸用直接以底 板12或蓋板14作為基板，在該銅製之底板12或銅製之蓋板 14上直接生長納米碳管陣列，從而得到由大量納米碳管陣 | 列所構成之毛細結構17。 工作時，腔室内之工作流體吸熱蒸發產生蒸汽，蒸氣 在碰到均熱板10a之散熱面（即蓋板14)時冷卻成液體，雨毛 細結構17與毛細結構15均可產生毛細作用力促使冷卻後之 工作液體回流，且分別利用底板12和蓋板14之内壁面上之 毛細結構17中納米碳管陣列之高熱傳導性能，並結合毛細 結構15中之納米碳管陣列151，增強吸熱面(底板12)之吸熱 性能和散熱面（蓋板14)之散熱性能，共同形成高效之傳熱 路控’大大減小了熱量從電子元件20由均熱板10a傳遞至散 11 200832120 快速且充分傳導熱量之目的也錢揮正轉熱功能，達到 12及中之毛細結構15支撐於均熱板10之底板 及盍板Μ之間，該毛細結構ls中之絲碳管輪200832120 IX. INSTRUCTIONS: "Technical field to which the invention pertains" - The present invention relates to a hot plate, which relates to a heat equalizing plate and a heat sink for dissipating heat for electronic components. [Prior Art] High-power electronic components such as processors, Northbridge chips, and light-emitting diodes are moving toward thinner, lighter, shorter, more versatile, and faster-moving trends. The heat generated per unit area during operation is also increasing. If the heat cannot be dissipated effectively in time, it will directly lead to a sharp rise in temperature, which will seriously affect the normal operation of the heat-generating electronic components. For this reason, a heat sink is required to dissipate the electronic components. The device is such that the heat-generating electronic component is equipped with a fan and the type 2 heatsink contacts are cooled by heat conduction for the purpose of heat dissipation. In addition to the removal of the heat flux, the heat-emitting electronic component and the heatsink are usually provided with A heat spreader with good thermal conductivity, which is usually larger than the area of the heat-generating electronic component, so the heat spreader The function is to distribute the heat generated by the heat-generating electronic components evenly before being transmitted to the heat sink to fully exert the performance of the heat sink. The heat-receiving plate can use a metal material with a high thermal conductivity such as copper or aluminum, but the metal plate is subject to The limited thermal conductivity of the material itself, if the high heat flux of the heating electronic components or the use of a larger uniform hot plate area to achieve a uniform heat distribution, still produce significant thermal resistance without the desired purpose of achieving a good soaking heat distribution Therefore, the overall heat dissipation efficiency of the heat dissipating device is not satisfactory. [Description of the Invention] 200832120 (4) The more detailed description of the embodiment - the heat transfer plate having a small thermal resistance and thus 妓, effectively transmitting and dispersing the material, and having the soaking plate The heat sink of the door 2 includes a bottom plate and a cover plate, and the bottom plate and the cover plate form a chamber, the chamber is filled with _1 as a fluid, and the cavity is inside, and there is a joint venture A fine structure is formed between the plate and the cover plate, and the first capillary structure includes at least one carbon nanotube array. The heat release device is formed by combining a heat sink and the heat equalizing plate. Compared with the prior art, the present invention The high thermal conductivity of the capillary structure composed of the carbon nanotube array in the soaking plate in the longitudinal direction will be transmitted to the dispersion and timely junction of the electronic component. The better the lateral heat transfer characteristics of the work, the better the lateral heat transfer characteristics, from the effect of shouting 4, thermal resistance, effectively solve the problem of high-heating electrical components. At the same time, the hair domain structure also provides for the condensed liquid The present invention is further described with reference to the accompanying drawings, in which: FIG. 1 is a first embodiment of the heat dissipating device of the present invention, including a first embodiment. a heat equalizing plate 10, an electronic component 20 attached to the lower side of the heat equalizing plate 10, and a heat sink 30 located on the upper side of the heat equalizing plate 10, wherein the electronic component 2 can be a computer central processing unit and a north bridge chip , graphic video arrays or light-emitting diodes. The heat sink 30 is made of a metal having high thermal conductivity, such as copper, aluminum, etc., and includes a flat-plate base 31 and a plurality of heat-dissipating fins 200832120 32 extending upward from the base 31. A large heat dissipation area is provided to dissipate the heat generated by the electronic component 20 into the environment in a timely manner. As shown in FIG. 2 and FIG. 3, the heat equalizing plate 1 includes a bottom plate 12, a cover plate 14, and a capillary structure 15 disposed between the bottom plate 1 and the cover plate 14. The bottom plate η and the cover plate 14 are made of copper, aluminum or other materials having high thermal conductivity and are flat. The peripheral portion of the cover plate 14 is bent vertically downward to form a side wall 142. The end of the 142 is bent outwardly in the horizontal direction _ to form a flange portion 140. The flange portion 140 has a peripheral dimension corresponding to the bottom plate 12, and is fixed by welding the flange portion 14〇 to the periphery 12 of the bottom plate 12, And a sealed chamber 11 is formed between the bottom plate 12 and the cover plate 14. The chamber 11 is generally evacuated to a certain vacuum state and filled with a low-boiling working fluid such as water, alcohol, etc., thereby utilizing the phase change of the working fluid to achieve rapid heat transfer and soaking. The capillary structure 15 includes seven carbon nanotube arrays 151 connected between the bottom plate and the cover plate 14, and the carbon nanotube arrays 151 each have a major rectangular parallelepiped shape whose southness is equal to or slightly larger than the height of the chamber. The nano Φ carbon nanotube arrays 151 are arranged in parallel at equal intervals in the chamber η, and are respectively pressed and fixed to the bottom plate 12 and the cover plate 14. To further fix the carbon nanotube array 151, a channel of a corresponding size may be formed on the inner wall surface of the bottom plate 12 and the cover plate 14 corresponding to the carbon nanotube array 151, so that both ends of the carbon nanotube array 151 are They are respectively housed and fixed in the channel. In this embodiment, in order to form the carbon nanotube array 151 in the capillary structure 15, first, a chemical vapor phase "Chemical Vapor Deposition" (CVD) is used on a substrate such as a Si substrate or The carbon substrate is grown on the copper substrate by the catalyst 8 200832120 to form the carbon nanotube array 151. At present, the carbon nanotube growth technology at present is up to the millimeter (mm) level. Thereafter, the substrate with the carbon nanotube array 151 is placed in an evacuatable container to evacuate the air in the carbon nanotube array 151, and then the carbon nanotube array is placed in pure In the water, the voids in the carbon nanotube array 151 are filled with water, and then placed in a low temperature environment capable of solidifying water to solidify the water in the carbon nanotube array 15i into solid and solid, thereby obtaining a carbon nanotube array. 151 The composite material is arranged neatly in the water molecule, and finally the cutting operation is performed, and the composite material is cut in a direction perpendicular to the growth direction of the nano carbon official array according to the required height, thereby obtaining a plurality of carbon nanotube arrays having a predetermined height and uniform length. 151. It is seen that the technology for preparing carbon nanotube heat conductive materials in the industry is also adopted in different ways. For example, the manufacturing steps disclosed in Tsinghua University Patent Application Publication No. 200410026846.9 and No. 200410026778.6 are the long carbon nanotube arrays, and then placed into The polymer is composed of a polymer material, such as (4), and the like, and the axis _ is finally visualized, and finally the carbon nanotube array is obtained by cutting into an appropriate height. In this embodiment, the carbon nanotube array 151 of the capillary structure can also be prepared by the above method. However, since the cavity to 11 is filled with working fluid such as water or alcohol, the nano slave array prepared by the above method needs to be internalized through high temperature. The removal of the polymer material, such as the use of stone butterfly as a polymer solvent, finally requires a step to remove the stone butterfly. In fact, in order to save the step of removing the paraffin, the polymer solvent may be replaced by pure water to cure and facilitate the cutting operation, that is, the solid water is solidified at a low temperature to be cut as a carrier of the carbon nanotube array 151. When the carbon nanotube array m is formed and placed in the heat equalizing plate 10 200832120, the step of removing paraffin is not required. Operation: The electronic component 2 is attached to the bottom plate U of the heat equalizing plate 1 Φ, the bottom plate 12 is the heat absorbing surface of the hot plate 1G, and the cover plate of the (4) _1G is connected with the __ her coffee. Heat _ the heat sink surface. The nano-carbon tube array 151 is connected between the bottom plate 12 of the heat equalizing plate 1 and the cover Μ. The heat generated by the operation of the electronic component 20 is first absorbed by the bottom, and the heat transfer is carried out through the bottom plate 12 to the working flow in the chamber u, which is sucked by the liquid of the work flow. The rapid evaporation of the new steam produces steam. 'Because the vapor helps in the chamber, the resistance is almost negligible, and the resulting therapeutic gas will quickly fill the entire chamber u, and when it hits the heat dissipating surface of the heat equalizing plate 10 (ie, the disk U) Cooling again into a liquid and returning to the bottom of the bottom plate 12 along the carbon nanotube array 151 to enter the next loop. Since the carbon nanotubes _151 have a common through hole, a capillary force can be generated to promote the working liquid after the cold portion. Reflux. It is well known that when the heat transfer coefficient of a phase change of a fluid is usually tens of times or even hundreds of 不 when no phase change occurs, the heat transfer efficiency and diffusion efficiency can be greatly improved by the phase change of the immersion body. The heat generated by the electronic components can be quickly distributed throughout the chamber 11. The other part of the heat of the electronic component 20 is directly conducted from the bottom plate 12 to the carbon nanotube array 151, and is transmitted to the cover plate 14 via the carbon nanotube array 151. Since the carbon nanotubes have a heat transfer coefficient of 3000 to 6600 W/mk in the growth direction, Therefore, an efficient heat transfer path is formed between the bottom plate 12 and the cover plate 14, which greatly reduces the heat resistance of the heat transfer from the electronic component 2 to the heat transfer plate 1 to 30, and the heat is directly It is quickly conducted to the heat sink 3 through the nano-carboniferous tube array 151 and dispersed into the environment, so that 200832120 greatly enhances the heat transfer function. - as shown in FIG. 4, the heat equalizing plate 1()a in the second embodiment is different from the first embodiment in the heat equalizing plate 10 in that the bottom plate I2 and the cover plate u are formed in the chamber 11 Another capillary structure 17 is formed on the inner wall surface. The capillary structure 17 is a porous mesh, a fiber (10) (seven), a microgroove # (gfQQVe), an i-sintered powder, or a composite capillary structure of the above type, as shown in FIG. 5 in the second embodiment. The capillary structure can also be formed by the high-temperature hot wire to find the carbon tube _, and when the fascinating structure 17 is composed of the nano-tube array, the method of forming the capillary structure 17 can be formed in the same manner as the capillary structure 15 described above. , no longer here. Since the growth _ carbon tube - generally in up to 6 {) () t: ~ 7 (8). When the bottom plate 12 or the cover plate 14 is made of a high temperature resistant material, such as a copper material, the method of forming the capillary structure 17 is to directly use the bottom plate 12 or the cover plate 14 as a substrate. The carbon nanotube array is directly grown on the copper base plate 12 or the copper cover plate 14, thereby obtaining a capillary structure 17 composed of a large number of carbon nanotube arrays. During operation, the working fluid in the chamber absorbs heat to evaporate to generate steam, and the vapor cools into a liquid when it hits the heat dissipating surface of the heat equalizing plate 10a (ie, the cover plate 14), and the rain capillary structure 17 and the capillary structure 15 can generate capillary force. The cooled working liquid is recirculated, and the high heat conduction performance of the carbon nanotube array in the capillary structure 17 on the inner wall surface of the bottom plate 12 and the cover plate 14 is utilized, and the carbon nanotube array 151 in the capillary structure 15 is combined to enhance the heat absorption surface. The heat absorption performance of the (base plate 12) and the heat dissipation performance of the heat dissipating surface (cover 14) together form an efficient heat transfer path, which greatly reduces the heat transfer from the electronic component 20 from the soaking plate 10a to the dispersion 11 200832120 quickly and fully The purpose of conducting heat is also to turn the heat function, and the capillary structure 15 reaching 12 and the middle is supported between the bottom plate of the heat equalizing plate 10 and the raft plate, and the carbon tube wheel in the capillary structure ls
==，沿縱向(即生長方向)具有很高之熱傳導 ，、、、傳¥特性十分優異’提供縱向快料熱，有效地 將發熱電子元件20所產生之熱量及時地傳遞至散妖哭％， 並同時結合均熱板10内之工作流體之相變化作用而且有之 良好橫向熱傳導特性，綜合達到有效減小熱阻之功效，達 到將熱量從發熱電子元件2〇經由均熱板1〇而快速且均句地 傳導至散熱H3(m及時地散發’有效解決高發熱量電子元 件之散熱_。_，該毛細結構15還為冷凝後之液體提 供回流之毛細力以及為均熱板1()提供支撐作用，從而提供 支樓、熱傳導及流體輸送等多重功能。 綜上所述，本發明符合發明專利要件，爰依法提出專 利申請。惟，以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在爰依本發明精神所作之等效修飾 或變化，皆應涵蓋於以下之申請專利範圍内。 【圖式簡單說明】 圖1係本發明散熱裝置第一實施例之剖視圖。 圖2係圖1散熱裝置中均熱板之示意圖。 圖3係圖2沿皿-瓜線之剖視圖。 圖4係圖2所示均熱板另一實施例之示意圖。 12 200832120 圖5係圖2所示均熱板又一實施例之示意圖。 【主要元件符號說明】 均熱板 10、10a 腔室 11 底板 12 折邊部 120 蓋板 14 周邊 140 侧壁 142 毛細結構 15、17 納米碳管陣列 151 電子元件 20 散熱器 30 基座 31 散熱鰭片 32 13==, has a very high heat conduction in the longitudinal direction (ie, the growth direction), and has excellent transfer characteristics. 'Provides longitudinal heat fast, effectively transferring the heat generated by the heat-generating electronic component 20 to the demon crying. At the same time, combined with the phase change of the working fluid in the heat equalizing plate 10 and the good lateral heat transfer characteristics, the effect of effectively reducing the thermal resistance is comprehensively achieved, and the heat is transferred from the heat generating electronic component 2 to the heat equalizing plate. Fast and uniform conduction to heat dissipation H3 (m timely dissipates 'effectively solves the heat dissipation of high-heating electronic components _. _, the capillary structure 15 also provides reflowing capillary force for the condensed liquid and is the soaking plate 1 () Providing support functions to provide multiple functions such as branch building, heat conduction and fluid transport. In summary, the present invention complies with the invention patent requirements, and patent applications are filed according to law. However, the above description is only a preferred embodiment of the present invention. The equivalent modifications or variations made by those who are familiar with the skill of the present invention in the spirit of the present invention should be included in the scope of the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a first embodiment of a heat dissipating device of the present invention. Fig. 2 is a schematic view showing a heat equalizing plate in the heat dissipating device of Fig. 1. Fig. 3 is a cross-sectional view of Fig. 2 along a dish-melon line. 12 200832120 FIG. 5 is a schematic view showing still another embodiment of the heat equalizing plate shown in FIG. 2. [Main component symbol description] Heat equalizing plate 10, 10a Chamber 11 Base plate 12 Folding portion 120 Cover Plate 14 perimeter 140 side wall 142 capillary structure 15, 17 carbon nanotube array 151 electronic component 20 heat sink 30 pedestal 31 heat sink fins 32 13