CN101864280A - Thermal interface material for packaging and radiating chip and preparation method thereof - Google Patents
Thermal interface material for packaging and radiating chip and preparation method thereof Download PDFInfo
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- CN101864280A CN101864280A CN201010176988A CN201010176988A CN101864280A CN 101864280 A CN101864280 A CN 101864280A CN 201010176988 A CN201010176988 A CN 201010176988A CN 201010176988 A CN201010176988 A CN 201010176988A CN 101864280 A CN101864280 A CN 101864280A
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Abstract
The invention discloses a thermal interface material for packaging and radiating a chip and a preparation method thereof. The thermal interface material comprises a carbon nano tube array on a substrate, and is characterized in that the thermal interface material contains liquid metal which is freely diffused and uniformly distributed in gaps of the carbon nano tube array. The invention uses the carbon nano tube having a high coefficient of heat conductivity to ensure that the thermal interface has a higher heat conductive property, uses the liquid alloy to promote the contact capability between the carbon nano tube and the heat sink and between the carbon nano tube and the chip so as to decrease the thermal resistance of the thermal interface and meet the radiating demand of high-performance chip. The preparation method thereof comprises the steps of: providing a carbon nano tube array vertically formed on the substrate, depositing a metal layer which is easily dissolved in liquid metal on the carbon nano tube, boosting to fully soak the carbon nano tube when the liquid metal is contacted with the carbon nano tube and filling the gaps of the carbon nano tube array.
Description
Technical field
The present invention relates to a kind of heat interfacial material that is used for high performance chips encapsulation and heat radiation, particularly a kind ofly classify basic building block as and the heat interfacial material and the method for making thereof that form with carbon nano-pipe array.
Background technology
Calculate according to famous " Moore's Law ": the transistor on the chip doubled in per 18 months, and so by 2010, transistorized quantity will be above 1,000,000,000 on the chip.High integration is favourable for the upgrading of computing power, yet brings chip power consumption and heat dissipation problem also to show especially out thus.In fact, except that computer chip, for a large amount of power electronics devices, photoelectric device and development in recent years little rapidly/naiio-electro-meclianical systems etc., all exist similar extensive and urgent heat radiation cooling needs, under the situation about having in addition requirement higher.Such as, the heat flow density of some micro-systems is up to 200W/cm
2These situation all show, are the inefficacy that prevents that the semi-conductor chip excessive heating from causing, at present the demand of high-performance cooling technology have been mentioned unprecedented aspect.In order to satisfy these needs, various radiating modes are used in a large number, as utilize modes such as fan heat radiation, water-cooled auxiliary heat dissipation and heat pipe heat radiation, but because the contact interface and the unfairness of scatterer and chip, general contact only less than 2% area, there is not the ideal contact interface, therefore fundamentally influenced chip greatly and carried out heat passage effect to scatterer, the higher heat interfacial material of some thermal conductivitys of increase increases the interface exposure level and just seems very necessary between the contact interface of scatterer and semiconducter device.
In traditional heat interfacial material, with grease, phase change material be the matrix material of carrier when using because of it for liquid can be less with thermal source surface infiltration thigh thermal contact resistance, and be that the matrix material thermal contact resistance of carrier is just bigger with silica gel and rubber, the common defects of these materials is that the thermal conductivity of whole material is less, representative value is at 1W/mK, this is the radiating requirements of incompatibility high performance chips more and more, though the heat conduction particle in the increase carrier can increase the thermal conductivity of matrix material, but can make the effect of impregnation may variation of material, thereby make the performance of heat interfacial material reduce greatly.In addition, a large amount of thermal cyclings can cause the inconsistent behavior of heat interfacial material, perhaps can cause heat interfacial material not produce heat leakage with chip attach to heat sink, has also limited the cooling of chip.
For improving the heat conductivility at interface, reduce interface resistance, occurred in recent years adopting the carbon nanotube of high thermal conductivity coefficient as heat interfacial material.People such as Savas Berber point out " Z " shape (10 in the article of a piece " Unusually high thermalconductivity of carbon nanotubes ", 10) carbon nanotube at room temperature thermal conductivity can reach 6600W/mK, but particular content reference Phys.Rev.Lett, vol.84, p4613.Though from existing technology, adopt carbon nanotube to reduce the thermal resistance of contact interface to a certain extent as can be seen, still have the bad problem that contacts between carbon nanotube and heat sink and the chip as hot interface.Do not give full play to the heat conduction advantage of carbon nanotube, influenced the heat conductivility of heat interfacial material.On the other hand, consider from the direction that improves boundary material and chip chamber contact area, the technology of liquid metal as heat interfacial material appearred adopting in recent years, when adopting liquid metal as heat interfacial material, can satisfy boundary material contacts with the good of chip chamber, but its thermal conductivity is not high, has only tens W/mK.
Therefore, for satisfying the heat radiation requirement of high-power chip, necessaryly provide a kind of and can set up good thermo-contact at contact interface, and can semiconducter device and heat sink between enough thermal conductivity and mechanical compliances are provided.
Summary of the invention
For satisfying the demand of high performance chips cooling technology, overcome the deficiency of the higher and loose contact of existing heat interfacial material thermal resistance, the invention provides a kind of novel Chip Packaging and heat transmission heat interfacial material and method for making thereof, between high-power chip and heat sink unit, set up reliable thermo-contact, and enough thermal conductivities are provided, improve the heat-sinking capability and the reliability and stability of high-power chip.
One object of the present invention will be achieved through the following technical solutions:
Chip Packaging and heat transmission heat interfacial material comprise suprabasil carbon nano pipe array, it is characterized in that: described heat interfacial material comprises freely the liquid metal that spreads, is uniformly distributed in the carbon nano pipe array slit.The thickness of described heat interfacial material is between 10 μ m～1mm.
Further, aforesaid Chip Packaging and heat transmission heat interfacial material, wherein this carbon nano-pipe array is classified one of single-wall carbon nanotube array, double-walled carbon nano-tube array and array of multi-walled carbon nanotubes as; Any carbon nanotube is perpendicular to substrate, and the carbon nanotube diameter is between 2nm～100nm.
Another object of the present invention, it realizes that the technical solution of being relied on is:
The method for making of Chip Packaging and heat transmission heat interfacial material is characterized in that comprising step: the carbon nano pipe array for preparing arbitrary shape, area on base material; Make one deck in described each carbon nano tube surface and soak into metal level; In the environment of protection gas, drip liquid metal to the carbon nano pipe array surface, and under the condition that is higher than the liquid metal melting temperature, adopt vacuumizing method liquid metal to be spread, fills up the slit of carbon nano pipe array.
Further, wherein said infiltration metal level be thickness 1nm～2nm gold thin film or platinum film; Described protection gas is rare gas element, optionally comprises a kind of in nitrogen or the argon gas.
Implement technical scheme of the present invention, its positive beneficial effect is:
The present invention adopts the carbon nanotube of high heat conduction and the heat interfacial material that liquid alloy is made, can for large power semiconductor device (for example, the superpower integrated chip) and superior thermo-contact is provided between heat sink, significantly reduce packaging thermal resistance, improve the heat-sinking capability and the stability of device.
For a kind of Chip Packaging of the present invention and heat transmission heat interfacial material and method for making thereof being easier to understand the practicality of its substantive distinguishing features and institute's tool thereof, below constipation close accompanying drawing the some specific embodiments of the present invention be described in further detail.But following description and explanation about embodiment do not constitute any limitation protection domain of the present invention.
Description of drawings
Fig. 1 is the schematic cross-section of heat interfacial material of the present invention.
The implication of each Reference numeral is as follows among the figure:
100～carbon nanotube, 101～liquid metal, 102～substrate.
Embodiment
The present invention is the demand that satisfies the high performance chips cooling technology, overcomes the deficiency of the higher and loose contact of existing heat interfacial material thermal resistance, provides to be used for Chip Packaging, and has had the heat interfacial material of excellent heat radiation.Be the schematic cross-section of this heat interfacial material as shown in Figure 1, as seen this heat interfacial material comprises carbon nano pipe array and the liquid metal 101 that carbon nanotube 100 forms in substrate 102.Wherein,
Those carbon nanotubes 100 all are formed at the perpendicular state of substrate 102 in the preparation, and the carbon nanotube diameter is about 2nm～100 nanometers.This carbon nano pipe array can be a single-wall carbon nanotube array, can be the double-walled carbon nano-tube array, also can be array of multi-walled carbon nanotubes or single wall, double-walled mixing carbon nano pipe array.This substrate 102 is for being suitable for any materials of carbon nano pipe array growth.
This liquid metal 101 can comprise and a kind of in gallium, indium, the gallium-indium-tin alloy etc. combine with carbon nanotube 100, be intended to improve chip and heat sink between thermo-contact degree and heat conductivility, reduce thermal contact resistance.
The preparation of Chip Packaging of the present invention and heat transmission heat interfacial material mainly may further comprise the steps:
(1) preparation of carbon nano pipe array
This carbon nano pipe array adopts the chemical Vapor deposition process preparation, and its concrete steps comprise: a smooth substrate 102 (a) is provided, and described base material is (this example are preferentially selected P type silicon base for use) such as silicon, silicon oxide or metals; (b) on silicon base, form one deck nickel catalyzator layer; (c) will there be the substrate 102 of catalyzer in 700-900 ℃ air, to anneal about 30-90 minute; (d) above-mentioned substrate 102 is placed Reaktionsofen, temperature of reaction is 725-800 ℃, grows 10-60 minute.The carbon nano pipe array 100 that forms is by the Van der Waals force formation array that contacts with each other.
Except that above-mentioned implementation method, this carbon nano pipe array also can adopt other existing preparation technology to obtain.
(2) on carbon nanotube, make the infiltration metal level that one deck is soluble in liquid metal.
This soaks into metal level be a kind of in gold and the platinum, adopts a kind of each carbon nano tube surface that is produced in evaporation or the sputtering technology, its objective is the slit of conducts liquid metal completely filled carbon nanotube, preferential employing sputtering technology metal refining gold in the present embodiment.Thickness 1nm-2nm.
(3) use liquid metal 101 filling carbon nano-pipe arrays 100 gaps
In the vacuum chamber of protection gas such as inflated with nitrogen or argon gas; liquid metal 102 is added drop-wise to the surface of carbon nano pipe array 100; under the condition that is higher than the liquid metal melting temperature, begin to vacuumize then; remove the air in carbon nano pipe array 100 gaps; liquid metal is freely spread fully; be full of the space of carbon nano pipe array, form carbon nano pipe array and liquid metal compound heat interfacial material.
By above description, be not difficult simultaneously to find: the whole preparation process flow process is simple, is suitable for the composite heat interfacial material that large-scale industry prepares carbon nanotube and liquid metal.
Below only be concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.
Claims (7)
1. Chip Packaging and heat transmission heat interfacial material comprise suprabasil carbon nano pipe array, it is characterized in that: described heat interfacial material comprises the liquid metal that is filled in the carbon nano pipe array slit.
2. Chip Packaging according to claim 1 and heat transmission heat interfacial material is characterized in that: described liquid metal is for freely to spread, to be evenly distributed in the slit of carbon nano pipe array.
3. Chip Packaging according to claim 1 and heat transmission heat interfacial material is characterized in that: the thickness of described heat interfacial material is between 10 μ m～1mm.
4. Chip Packaging according to claim 1 and heat transmission heat interfacial material, it is characterized in that: described carbon nano-pipe array is classified one of single-wall carbon nanotube array, double-walled carbon nano-tube array and array of multi-walled carbon nanotubes as, wherein any carbon nanotube is perpendicular to substrate, and the carbon nanotube diameter is between 2nm～100nm.
5. the method for making of Chip Packaging and heat transmission heat interfacial material is characterized in that comprising step:
I, on base material, prepare the carbon nano pipe array of arbitrary shape, area;
II, make one deck in described each carbon nano tube surface and soak into metal level;
III, in the environment of protection gas, drip liquid metal, and under the condition that is higher than the liquid metal melting temperature, adopt vacuumizing method liquid metal to be spread, fills up the slit of carbon nano pipe array to the carbon nano pipe array surface.
6. the method for making of Chip Packaging according to claim 5 and heat transmission heat interfacial material is characterized in that: gold thin film or platinum film that described infiltration metal level is thickness 1nm～2nm.
7. the method for making of Chip Packaging according to claim 5 and heat transmission heat interfacial material is characterized in that: described protection gas is rare gas element, optionally comprises a kind of in nitrogen or the argon gas.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105467489A (en) * | 2015-12-18 | 2016-04-06 | 深圳大学 | Method for metal filling of silicon-based microstructure used for optical grating manufacture |
| CN105530802A (en) * | 2015-12-28 | 2016-04-27 | 联想(北京)有限公司 | Cooling system and electronic equipment |
| CN105609153A (en) * | 2015-12-18 | 2016-05-25 | 深圳大学 | High-resolution X-ray conversion screen fluorescent material filling method |
| CN108251063A (en) * | 2016-12-28 | 2018-07-06 | 北京有色金属研究总院 | A kind of high-performance composite phase-change material and preparation method thereof |
| US10031564B2 (en) | 2015-12-28 | 2018-07-24 | Lenovo (Beijing) Limited | Heat dissipation apparatus and system for an electronic device |
| US10171365B2 (en) | 2016-06-09 | 2019-01-01 | International Business Machines Corporation | Turbolink: method and apparatus for controlling input/output signaling speed |
| CN109817829A (en) * | 2019-01-31 | 2019-05-28 | 武汉华星光电半导体显示技术有限公司 | Heat dissipation film and display panel |
| CN110091390A (en) * | 2019-06-10 | 2019-08-06 | 西安鹰实压合机电设备有限公司 | A kind of method and its conducting structure of heating platen and the transmitting of heating rod gapless heat |
| CN110184583A (en) * | 2018-02-23 | 2019-08-30 | 中国科学院过程工程研究所 | A kind of gallium nano wire and its preparation method and application |
| CN110343927A (en) * | 2019-07-18 | 2019-10-18 | 深圳前海量子翼纳米碳科技有限公司 | A method of reducing liquid metal alloy thermally conductive sheet thermal resistance |
| CN111909666A (en) * | 2020-08-12 | 2020-11-10 | 杭州英希捷科技有限责任公司 | Non-transfer type thermal interface material based on vertical carbon nanotube array and method thereof |
| CN113675159A (en) * | 2021-07-07 | 2021-11-19 | 中国科学院理化技术研究所 | Inner-packaging self-adaptive uniform-temperature thermal interface based on liquid metal infiltration and preparation method and application thereof |
| CN113677148A (en) * | 2021-07-07 | 2021-11-19 | 中国科学院理化技术研究所 | Self-sealing type super-gas-dredging immersion type phase-change liquid-cooling reinforced heat dissipation plate and preparation method and application thereof |
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Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609153A (en) * | 2015-12-18 | 2016-05-25 | 深圳大学 | High-resolution X-ray conversion screen fluorescent material filling method |
| CN105467489B (en) * | 2015-12-18 | 2018-09-07 | 深圳大学 | A kind of silicon substrate micro-structure metal fill method for preparing grating |
| CN105467489A (en) * | 2015-12-18 | 2016-04-06 | 深圳大学 | Method for metal filling of silicon-based microstructure used for optical grating manufacture |
| CN105530802A (en) * | 2015-12-28 | 2016-04-27 | 联想(北京)有限公司 | Cooling system and electronic equipment |
| US10031564B2 (en) | 2015-12-28 | 2018-07-24 | Lenovo (Beijing) Limited | Heat dissipation apparatus and system for an electronic device |
| CN105530802B (en) * | 2015-12-28 | 2018-08-10 | 联想(北京)有限公司 | Cooling system and electronic equipment |
| US10171365B2 (en) | 2016-06-09 | 2019-01-01 | International Business Machines Corporation | Turbolink: method and apparatus for controlling input/output signaling speed |
| CN108251063A (en) * | 2016-12-28 | 2018-07-06 | 北京有色金属研究总院 | A kind of high-performance composite phase-change material and preparation method thereof |
| CN110184583A (en) * | 2018-02-23 | 2019-08-30 | 中国科学院过程工程研究所 | A kind of gallium nano wire and its preparation method and application |
| CN109817829A (en) * | 2019-01-31 | 2019-05-28 | 武汉华星光电半导体显示技术有限公司 | Heat dissipation film and display panel |
| CN110091390A (en) * | 2019-06-10 | 2019-08-06 | 西安鹰实压合机电设备有限公司 | A kind of method and its conducting structure of heating platen and the transmitting of heating rod gapless heat |
| CN110091390B (en) * | 2019-06-10 | 2024-03-19 | 西安鹰实压合机电设备有限公司 | Method for zero-clearance heat transfer between hot-pressing plate and heating rod and conduction structure thereof |
| CN110343927A (en) * | 2019-07-18 | 2019-10-18 | 深圳前海量子翼纳米碳科技有限公司 | A method of reducing liquid metal alloy thermally conductive sheet thermal resistance |
| CN110343927B (en) * | 2019-07-18 | 2021-01-08 | 深圳前海量子翼纳米碳科技有限公司 | Method for reducing thermal resistance of liquid metal alloy heat-conducting fin |
| CN111909666A (en) * | 2020-08-12 | 2020-11-10 | 杭州英希捷科技有限责任公司 | Non-transfer type thermal interface material based on vertical carbon nanotube array and method thereof |
| CN113675159A (en) * | 2021-07-07 | 2021-11-19 | 中国科学院理化技术研究所 | Inner-packaging self-adaptive uniform-temperature thermal interface based on liquid metal infiltration and preparation method and application thereof |
| CN113677148A (en) * | 2021-07-07 | 2021-11-19 | 中国科学院理化技术研究所 | Self-sealing type super-gas-dredging immersion type phase-change liquid-cooling reinforced heat dissipation plate and preparation method and application thereof |
| CN113677148B (en) * | 2021-07-07 | 2024-01-19 | 中国科学院理化技术研究所 | Self-sealing super-hydrophobic immersed phase-change liquid-cooled reinforced heat dissipation plate and preparation method and application thereof |
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Application publication date: 20101020 |