1329255 九、發明說明： 【發明所屬之技術領域】 本發明係涉及一種均熱板，特別係關於-種用於為電 子元件進行散熱之均熱板及散熱裝置。 【先前技術】1329255 IX. Description of the Invention: [Technical Field] The present invention relates to a heat equalizing plate, and more particularly to a heat equalizing plate and a heat dissipating device for dissipating heat for an electronic component. [Prior Art]
諸如電腦中央處理器、北橋晶片、發光二極體等高功 率電子科朝向更輕驗小以及多魏、更快速運行之趨 勢發展，其在運行時單位面積所產生之熱量也隨之愈來愈 多，該等熱量如果纽時有效地散去，將直接導致溫 度急劇上升，*嚴重影_發熱電子元件之正常運行。為 此，需要散熱裝置來對該等電子元件進行散熱。 最典型之散熱裝置是使發熱電子元件與配有風扇之續 片式散熱H鋪通聽傳導達成散熱目的，為餘高数通 量(heatflux)之移除，在發熱電子元件與散熱器之間通常加 裝一具有良好熱傳導性之均熱板(heat啊 通常較發熱電子元狀_大，因__板之作肢將 發熱電子讀產生之在_散熱器之前先均勻分佈， 以充为發揮散熱之效能，該均熱板可錢鋼、銘等較高 熱導係數之金屬機，但金屬板受制於材料 二 傳導性’若對高熱《之好树使輪 ==實現熱量均句分佈時，仍會產生明顯之熱阻而 …，到良好均熱分佈之翻目的，以致散_置之敫體 散熱效率不甚理想。 正體 【發明内容】 1329255 均熱板之散熱裝置 一種均熱板，包括—庙妬芬 ^. 之pmm 板，所述底板與蓋板 之間鹰成一腔室’該腔室内填充有 =設:f接於所述底板與蓋板之間之第-毛細結; 所述第-毛細結構包括至少—納米碳管陣列。High-power electronics such as computer central processing units, North Bridge chips, and light-emitting diodes are moving toward a trend toward lighter, smaller, more rapid, faster operation, and the heat generated per unit area during operation is also increasing. More, if the heat is effectively dissipated if it is new, it will directly lead to a sharp rise in temperature, * serious shadows - the normal operation of the heating electronic components. To this end, a heat sink is required to dissipate the electronic components. The most typical heat sink is to dissipate the heat-generating electronic components and the continuous heat-dissipation H-slide with a fan to achieve heat dissipation. The heat flux is removed between the heat-emitting electronic components and the heat sink. Usually, a heat-receiving plate with good thermal conductivity is usually installed (heat is usually more hot-emitting electrons _ large, because the __ plate's limbs will generate heat and electronically read before the _heats are evenly distributed, to play The efficiency of heat dissipation, the soaking plate can be a metal machine with high thermal conductivity such as Qiangang, Ming, etc., but the metal plate is subject to the conductivity of the material, if the high heat "good tree makes the wheel == realize the distribution of heat even sentence, There will still be obvious thermal resistance..., to the purpose of good soaking heat distribution, so that the heat dissipation efficiency of the bulk body is not ideal. [Abstract] 1329255 The heat sink of the soaking plate is a soaking plate, including a pmm plate of the temple, the eagle is formed into a chamber between the bottom plate and the cover plate, and the chamber is filled with a first capillary junction between the bottom plate and the cover plate; The first capillary structure includes at least an array of carbon nanotubes.
一，散熱裝置’由—散熱賴上料熱板組合形成。 與習知技術相比，本發明利用該均熱板内由納米碳管First, the heat dissipating device 'is formed by a combination of heat-dissipating hot plates. Compared with the prior art, the present invention utilizes the carbon nanotubes in the soaking plate
::成:毛細結構在縱向上所具有之高熱傳導性能將發 二、兀所產生之熱量及時地傳遞至散熱器，並同時結 ίΐί板k工作流體之相變化作用而具有之良好橫向熱 寺性，從而達到減小熱阻之功效，有效解決高發孰量 電子元件之散_題。同時，該毛細結構還為冷凝後之液 體提供回流之毛細相及柄敝提供支撐作用。 【實施方式】 下面參_®，結合實施例對本發縣進—步說明。 如圖1所示，為本發賴絲置之第—實施例，包括一 均熱板10、貼設於該均熱板1GT側之—電子元物及位於 =均熱板1G上側之-散熱H30，其中該電子元㈣可為電 知中央處理器、北橋晶片、圖形視頻陣列或者發光二極體 等。. 該散熱器30由具高導熱性能之金屬，如銅、鋁等製成， 包括—平板型之基座31及從基座31向上延伸之複數散熱鰭 片32，所雜熱H3G可提供-較大之散熱_將電子元件 20產生之熱量及時地散發至環境中。 如圖2及圖3所示，該均熱板1〇包括一底板12、一蓋板 14及设於該底板1〇與蓋板14之間之毛細結構15。該底板工二 與蓋板14由銅、鋁或者其他具有高導熱係數之材料製成， 且均呈平板狀，該蓋板14之周邊部分垂直向下彎折一定高 度形成一侧壁142，該側壁142之末端向外彎折沿水準方向 延伸形成一折邊部140，該折邊部140之週邊尺寸與底板12 相當，通過將該折邊部14〇與底板12之周邊120焊接固定， 從而於底板12與蓋板14之間形成一密閉之腔室11〇該腔室 11内一般被抽至一定之真空狀態，且填充有低沸點工作流 體，如水、酒精等，從而利用工作流體之相變化達到快速 傳熱與均熱之目的。該毛細結構15包括連接底板12與蓋板 14之間之7個納米碳管陣列151 ’該等納米碳管陣列151均 呈長方體狀，其高度等於或略大於腔室11之高度。所述納 米碳管陣列151等間隔之平行排布於該腔室11内，分別與底 板12與蓋板14相互抵壓固定。為進一步固定該納米碳管陣 列151，也可於該底板12與蓋板14之内側壁面上對應于納 米碳管陣列151之位置開設相應大小之槽道，從而將納米碳 管陣列151之兩端分別收容固定於槽道内。 本實施例中，為形成該毛細結構15中納米碳管陣列 151，首先採用化學氣相沉積法（Chemical Vapor Deposition，CVD)在一基板，如石夕基板（Si substrate)或 者純銅基板（copper substrate)上在催化劑之作用下生長 1329255 形成該納米碳管陣列151，目前，現階段之納米碳管生長技 術已可達宅米（mm)級。之後’將帶有納米碳管陣列κι之 基板置於可抽真空之容器中對其進行抽真空，使納米碳管 陣歹’]i5i中之空氣排出’然後將該納米碳管陣歹置入純 水中，使納米碳管陣列151中之空隙由水填充，再將之置於 可使水滅固之低溫壤境中使納米碳管陣列中之水凝固 為固態，即可得到納米碳管陣列151整齊排布于水分子中之 複合材料，最後進行切割操作，按照所需高度沿垂直于納 米碳管陣列生長方向切割該複合材料，從而得到大量具有 預訂高度且長度均一之納米碳管陣列151。 目前，業界製備納米碳管熱傳導材料之技術亦有採用 夕種不同之方式，比如清華大學專利申請公開第 200410026846.9號、第200410026778.6號揭露之製造步 驟為先生長納米碳管陣列，接著放入至由高分子材料，如 石蠟等組成之溶劑中，待固化後形成載體，最後經由裁切 成適當高度而得到納米碳管陣列。本實施例也可採用上述 方法製備該毛細結構15之納米碳管陣列151，然而由於腔 室11内填充^水或者鋪打作雜，上述方法所製備之 納米碳管陣列需要再經由高溫而將内部之高分子材料去 除’如用码料高分子㈣，最後需錢行輯步驟 將石躐去除。實際上’為節省去除石歡㈣，可以用純 水替代所述高分子輔制化而方便_操作，即利用 純水在低溫下固化而作為納米碳管陣列151之栽體對其進 仃裁切，這樣形成所賴米碳管陣列151後置人均熱板⑺ 1329255 内時’不需要再進行除去石蠟之步驟。 * 操作時，該電子元件20貼在均熱板1〇之底板12之下表 * 面該底板12即為均熱板1〇之吸熱面，而均熱板之蓋板 . 14則與散熱器30之基座31熱性連接，為均熱板1〇之散熱 面。納米碳管陣列151連接於均熱板10之底板12與蓋板14 之間。電子元件20工作時所產生熱量首先被底板12吸收， 然後其中一部分熱量經由底板12傳遞至腔室u内之工作流 # 體，由於工作流體選用低沸點之液體，其吸熱後快速蒸發 產生蒸汽，由於蒸氣在腔室n内之傳播阻力幾乎可以忽 略產生之療·氣將迅速充滿整個腔室11 ,而當碰到均熱板 10之散熱面（即蓋板14)時將再次冷卻成液體並沿著納米碳 官陣列151回流至底板12位置處而進入下一次迴圈，由於 納米碳管陣列151中間具有大量通孔，可產生毛細作用力促 使冷卻後之工作液體回流。眾所周知，當一流體發生相變 化時之熱傳係數通常是不發生相變化時之數十倍甚至數百 Φ 倍，因此通過工作流體之相變化可大幅提升熱量之傳遞效 率及擴散效率並能將電子元件所產生之熱量迅速均布於整 個腔室11。電子元件20之另外部分熱量則直接自底板12傳 導至納米碳管陣列151，經由納米碳管陣列151傳遞至蓋板 14，由於納米碳管在生長方向上之熱傳導係數為 3000〜6600W/m.k，從而在底板12與蓋板14之間形成高效 之傳熱路徑，大大減小了熱量從電子元件2〇由均熱板1〇傳 遞至散熱器30間之熱阻，此部分熱量可直接經由納米碳管 陣列151而快速地傳導至散熱器3〇並散佈至環境中，如此 10 1329255 極大地強化熱傳功能。 ‘ 如圖4所示為第二實施例中之均熱板10a，其與第一實 … 施中均熱板1〇之區別在於，該底板12與蓋板14于形成腔室 • 11之内側壁面上形成有另一毛細結構17。該毛細結構17為 多孔隙之網目（mesh)、纖維（fiber)、微溝槽（groove)、燒 結粉末（sintered powder)或者以上各類型式之複合毛細結 構。如圖5所示之第三實施例中，該毛細結構17同樣也可由 φ 咼熱傳導係數之納米碳管陣列構成，當該毛細結構17為由 納米碳管陣列構成時，形成該毛細結構17之方法可以採用 與前述毛細結構15之形成方法相同，在此不再贅述。 由於生長納米碳管一般要在高達600〇c 〜7〇〇°c之高溫 下進行，當該底板12或蓋板14是由耐高溫材料，比如銅材 料製成時，形成該毛細結構17之方法還可以採用直接以底 板12或蓋板14作為基板，在該銅製之底板12或銅製之蓋板 14上直接生長納米叙管陣列，從而得到由大量納米碳管陣 • 列所構成之毛細結構17。 工作時，腔室内之工作流體吸熱蒸發產生蒸汽，蒸氣 在碰到均熱板10a之散熱面（即蓋板14)時冷卻成液體，而毛 細結構17與毛細結構15均可產生毛細作用力促使冷卻後之 工作液體回流，且分別利用底板12和蓋板14之内壁面上之 毛細結構17中納米碳管陣列之高熱傳導性能，並結合毛細 結構15奴鮮碳f陣m51，職絲面(絲12)之吸熱 性能和散熱面（蓋板14)之散熱性能，制形成高效之傳熱 路徑，大大減小了熱量從電子元件2〇由均熱板1〇a傳遞至散 11 1329255 熱器30之熱阻。該均熱板1〇a之熱傳導性能不受方向性之影 響，即使在傾斜狀態下使用也能發揮正常傳熱功能，達到 快速且充分傳導熱量之目的。 上述各實施例中之毛細結構15支撐於均熱板1〇之底板 12及蓋板14之間，該毛細結構15中之納米碳管陣列l5i由 於經由生長形成，沿縱向（即生長方向）具有很高之熱傳導 係數’熱料雜十分優異，提供縱向快速導熱，有效地 將發熱電子το件20所產生之熱量及時轉遞至散熱器3〇， 亚同時結合均熱板糊之謂流體之相變化側而具有之 良好橫向熱傳導特性’综合達到有效減小熱阻之功效，達 到將熱量㈣熱電子元件2_由均熱板胸絲且均勾地 傳導至散熱器3(UX及時地散發，有效解決冑發熱量電子元 件之散制題。啊，該毛細結構15還為冷凝後之液體提 供回流之毛細力以及為均熱板1〇提供支撐作用，從而提供 支撐、熱傳導及流體輸送等多重功能。 綜上所述，本發明符合發明專利要件，爱依法提出專 利申請。惟’以上所述者僅為本發明讀佳實施例，舉凡 熟悉本紐藝之人士，在纽本發明精神所狀等效修倚 或變化’皆應涵蓋於町之申請專利範圍内。 【圖式簡單說明】 圖1係本發明散熱裝置第一實施例之剖視圖。 圖2係圖1散熱裝置中均熱板之示意圖。 圖3係圖2沿瓜-冚線之剖視圖。 圖4係圖2所示均熱板另一實施例之示意圖。 12 1329255 圖5係圖2所示均熱板又一實施例之示意圖。 【主要元件符號說明】 均熱板 10、10a 腔室 11 底板 12 折邊部 120 蓋板 14 周邊 140 側壁 142 毛細結構 15、17 納米碳管陣列 151 電子元件 20 散熱器 30 基座 31 散熱鰭片 32::In: The high thermal conductivity of the capillary structure in the longitudinal direction will transfer the heat generated by the enthalpy to the radiator in a timely manner, and at the same time, the phase change of the working fluid of the plate k has a good lateral heat temple. Sexuality, so as to achieve the effect of reducing thermal resistance, effectively solve the problem of high-volume electronic components. At the same time, the capillary structure also provides support for the condensed capillary body and the shank of the condensed liquid. [Embodiment] The following is a description of the present invention in conjunction with the embodiment. As shown in FIG. 1 , the first embodiment of the present invention comprises a heat equalizing plate 10, an electronic component attached to the side of the heat equalizing plate 1GT, and a heat sink located on the upper side of the heat equalizing plate 1G. H30, wherein the electronic component (4) can be a central processing unit, a north bridge chip, a graphic video array, or a light emitting diode. The heat sink 30 is made of a metal having high thermal conductivity, such as copper, aluminum, etc., and includes a flat-plate base 31 and a plurality of heat-dissipating fins 32 extending upward from the base 31, and the heat H3G can provide - Larger heat dissipation _ dissipates the heat generated by the electronic component 20 to the environment in a timely manner. As shown in FIG. 2 and FIG. 3, the heat equalizing plate 1 includes a bottom plate 12, a cover plate 14, and a capillary structure 15 disposed between the bottom plate 1 and the cover plate 14. The bottom plate 2 and the cover plate 14 are made of copper, aluminum or other materials having a high thermal conductivity, and are all in the form of a flat plate. The peripheral portion of the cover plate 14 is bent vertically downward to form a side wall 142. The end of the side wall 142 is bent outwardly and extends in the horizontal direction to form a flange portion 140. The flange portion 140 has a peripheral dimension equal to that of the bottom plate 12, and is welded and fixed to the periphery 120 of the bottom plate 12 by the flange portion 14 A closed chamber 11 is formed between the bottom plate 12 and the cover plate 14. The chamber 11 is generally evacuated to a certain vacuum state and filled with a low boiling working fluid such as water, alcohol, etc., thereby utilizing the phase of the working fluid. The change achieves the purpose of rapid heat transfer and soaking. The capillary structure 15 includes seven carbon nanotube arrays 151' between the bottom plate 12 and the cover plate 14. The carbon nanotube arrays 151 are each in the shape of a rectangular parallelepiped having a height equal to or slightly larger than the height of the chamber 11. The carbon nanotube arrays 151 are arranged in parallel in the chamber 11 at equal intervals, and are respectively pressed and fixed to the bottom plate 12 and the cover plate 14. To further fix the carbon nanotube array 151, a channel of a corresponding size may be formed on the inner wall surface of the bottom plate 12 and the cover plate 14 corresponding to the carbon nanotube array 151, so that both ends of the carbon nanotube array 151 are They are respectively housed and fixed in the channel. In this embodiment, in order to form the carbon nanotube array 151 in the capillary structure 15, first, a chemical vapor deposition (CVD) method is used on a substrate, such as a Si substrate or a copper substrate. The carbon nanotube array 151 is formed by growing 1329255 under the action of a catalyst. At present, the carbon nanotube growth technology at the present stage has reached the home meter (mm) level. After that, the substrate with the carbon nanotube array κι is placed in an evacuatable container to evacuate the air in the carbon nanotube array ]'] i5i' and then the carbon nanotube array is placed In pure water, the voids in the carbon nanotube array 151 are filled with water, and then placed in a low temperature soil capable of dewatering the water to solidify the water in the carbon nanotube array into a solid state, thereby obtaining a carbon nanotube. The array 151 is arranged neatly in the composite material in the water molecule, and finally the cutting operation is performed, and the composite material is cut along the growth direction perpendicular to the carbon nanotube array according to the required height, thereby obtaining a plurality of carbon nanotube arrays having a predetermined height and uniform length. 151. At present, the technology for preparing carbon nanotube heat-conducting materials in the industry is also adopted in different ways. For example, the manufacturing steps disclosed in Tsinghua University Patent Application Publication No. 200410026846.9 and No. 200410026778.6 are the long carbon nanotube arrays, and then placed in the In a solvent composed of a polymer material, such as paraffin, a carrier is formed after being solidified, and finally a carbon nanotube array is obtained by cutting into an appropriate height. In this embodiment, the carbon nanotube array 151 of the capillary structure 15 can also be prepared by the above method. However, since the chamber 11 is filled with water or paved, the carbon nanotube array prepared by the above method needs to pass through the high temperature. The internal polymer material is removed 'if the polymer is used (4), and finally the stone steps are removed. In fact, in order to save the stone (4), it is convenient to replace the polymer with pure water, which is convenient to use, that is, solid water is solidified at a low temperature and used as a carrier of the carbon nanotube array 151. Cut, so that the formation of the carbon nanotube array 151 after the per capita hot plate (7) 1329255 inside the 'no need to remove the paraffin step. * In operation, the electronic component 20 is attached to the underside of the bottom plate 12 of the heat equalizing plate 1 . The bottom plate 12 is the heat absorbing surface of the heat equalizing plate 1 , and the cover plate of the heat equalizing plate. 14 and the heat sink The base 31 of the 30 is thermally connected, and is a heat dissipating surface of the heat equalizing plate. The carbon nanotube array 151 is connected between the bottom plate 12 of the heat equalizing plate 10 and the cover plate 14. The heat generated by the operation of the electronic component 20 is first absorbed by the bottom plate 12, and then a part of the heat is transferred to the working fluid body in the chamber u via the bottom plate 12, and since the working fluid selects a liquid having a low boiling point, it absorbs heat and rapidly evaporates to generate steam. Since the propagation resistance of the vapor in the chamber n is almost negligible, the treatment gas will quickly fill the entire chamber 11, and when it hits the heat dissipating surface of the heat equalizing plate 10 (i.e., the cover plate 14), it will be cooled again into a liquid and The nanocarbon array 151 is reflowed to the position of the bottom plate 12 to enter the next loop. Since the carbon nanotube array 151 has a large number of through holes in the middle, a capillary force can be generated to cause the working liquid to be recirculated after cooling. It is well known that when a fluid undergoes a phase change, the heat transfer coefficient is usually tens or even Φ times that of a phase change. Therefore, the phase change of the working fluid can greatly improve the heat transfer efficiency and diffusion efficiency and can The heat generated by the electronic components is quickly distributed throughout the chamber 11. The other part of the heat of the electronic component 20 is directly conducted from the bottom plate 12 to the carbon nanotube array 151, and is transmitted to the cover plate 14 via the carbon nanotube array 151. Since the carbon nanotubes have a heat transfer coefficient of 3000 to 6600 W/mk in the growth direction, Thereby, an efficient heat transfer path is formed between the bottom plate 12 and the cover plate 14, which greatly reduces the thermal resistance of heat transfer from the electronic component 2 to the heat spreader plate 1 to the heat sink 30, and the heat can be directly passed through the nanometer. The carbon tube array 151 is quickly conducted to the heat sink 3〇 and spread to the environment, so that 10 1329255 greatly enhances the heat transfer function. As shown in FIG. 4, the heat equalizing plate 10a in the second embodiment is different from the first heat conducting plate 1 in that the bottom plate 12 and the cover plate 14 are formed inside the chamber 11 Another capillary structure 17 is formed on the wall. The capillary structure 17 is a porous mesh, a fiber, a groove, a sintered powder or a composite capillary structure of the above type. In the third embodiment shown in FIG. 5, the capillary structure 17 can also be composed of a carbon nanotube array of φ 咼 heat conduction coefficient, and when the capillary structure 17 is composed of a carbon nanotube array, the capillary structure 17 is formed. The method can be the same as the method for forming the aforementioned capillary structure 15, and will not be described herein. Since the growth of the carbon nanotubes is generally performed at a high temperature of up to 600 〇c to 7 〇〇 ° C, when the bottom plate 12 or the cover plate 14 is made of a high temperature resistant material such as a copper material, the capillary structure 17 is formed. The method can also directly use the bottom plate 12 or the cover plate 14 as a substrate, and directly grow a nano-snadium array on the copper base plate 12 or the copper cover plate 14, thereby obtaining a capillary structure composed of a large number of carbon nanotube arrays. 17. During operation, the working fluid in the chamber absorbs heat to evaporate to generate steam, and the vapor cools into a liquid when it hits the heat dissipating surface of the heat equalizing plate 10a (ie, the cover plate 14), and the capillary structure 17 and the capillary structure 15 can generate capillary force. The cooled working liquid is recirculated, and the high heat conduction performance of the carbon nanotube array in the capillary structure 17 on the inner wall surface of the bottom plate 12 and the cover plate 14 is utilized, respectively, and combined with the capillary structure 15 slave carbon f array m51, the occupational silk surface ( The heat absorption performance of the wire 12) and the heat dissipation performance of the heat dissipating surface (cover 14) form an efficient heat transfer path, which greatly reduces heat transfer from the electronic component 2 to the heat transfer plate 1〇a to the dispersion 11 1329255 heat exchanger 30 thermal resistance. The heat transfer performance of the heat equalizing plate 1〇a is not affected by the directivity, and the normal heat transfer function can be exerted even when used in a tilted state, so that the heat can be quickly and sufficiently conducted. The capillary structure 15 in each of the above embodiments is supported between the bottom plate 12 of the heat equalizing plate 1 and the cover plate 14. The carbon nanotube array 155 in the capillary structure 15 is formed in the longitudinal direction (ie, the growth direction) due to growth. Very high heat transfer coefficient 'excellent hot material miscellaneous, providing longitudinal rapid thermal conduction, effectively transferring the heat generated by the heat-generating electrons 20 to the heat sink in time, and simultaneously combining the soaking paste The change side has good lateral heat transfer characteristics' comprehensively achieves the effect of effectively reducing the thermal resistance, so that the heat (4) of the hot electronic component 2_ is transmitted from the soaking plate to the heat sink 3 (the UX is timely distributed, Effectively solve the problem of bulk heat electronic components. Ah, the capillary structure 15 also provides reflowing capillary force for the condensed liquid and provides support for the soaking plate 1 , to provide support, heat conduction and fluid transport. In summary, the present invention complies with the requirements of the invention patent, and loves to file a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and is familiar with the present invention. The equivalent of the invention in the spirit of the invention is to be included in the scope of the patent application. [Fig. 1 is a cross-sectional view of the first embodiment of the heat sink of the present invention. Fig. 3 is a cross-sectional view of the heat sink in Fig. 2. Fig. 4 is a schematic view showing another embodiment of the heat spreader shown in Fig. 2. 12 1329255 Fig. 5 is shown in Fig. 2. Schematic diagram of another embodiment of the heat equalizing plate. [Description of main components] Heating plate 10, 10a Chamber 11 Base plate 12 Folding portion 120 Cover plate 14 Peripheral 140 Side wall 142 Capillary structure 15, 17 Carbon nanotube array 151 Electronic components 20 heat sink 30 base 31 heat sink fins 32
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