TW200826748A - Integrated intermediate electrode and pressure gradient type plasma gun - Google Patents
Integrated intermediate electrode and pressure gradient type plasma gun Download PDFInfo
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- TW200826748A TW200826748A TW96130999A TW96130999A TW200826748A TW 200826748 A TW200826748 A TW 200826748A TW 96130999 A TW96130999 A TW 96130999A TW 96130999 A TW96130999 A TW 96130999A TW 200826748 A TW200826748 A TW 200826748A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/31—Electron-beam or ion-beam tubes for localised treatment of objects for cutting or drilling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/52—Generating plasma using exploding wires or spark gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
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Abstract
Description
200826748 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種作為成膜裝置之電漿源所使用的壓 力梯度型電漿搶、及一種使用於其之中間電極。 【先前技術】 以往,係使用壓力梯度型電漿槍作為成膜裝置之電漿 源。壓力梯度型電漿槍係於筒狀容器將陰極、環狀第1中 間電極、環狀第2中間電極、以及介於第1中間電極與第 2中間電極間之絕緣構件設置成同軸狀所構成。 該種壓力梯度型電聚搶中’係使用暫組裝構件將第1 :間電極與第2中間電極暫組裝’並將該暫組裝品安裝於 昼力梯度型電襞槍。然而,在暫組裝帛i中間電極盘第2 中間電極時,㈣會有暫組裝構件脫落之情形,而有處理 時便題。X::第1中間電極與第2中間電極暫組裝 t,亦有該暫組裝品之重量變大的問題。 將於因此,如專利文獻1所示,已揭示-種壓力梯度型電 :係使用組裝有絕緣構件之固定構件以安裳中間雷 =種壓力梯度型電漿搶中,由於可個別安u 1 :井…中間電極’因此無暫組襄構件脫落之情形二 心升安裝第1中間電極與第2中間電極時之作業性。而 專利文獻1 :曰本專利特開平11-256319號公報 【發明内容】 6 200826748 i之構成令, 中間電極與第 然而’專利文獻 支持手段設置於第】 變得複雜的問題。 必須將支持固定構件 2中間電極,而有構造 又以在為確保第!中間電極與第2中間電極 性,係藉由將蓋子焊接 矾k 極之喊體(housing)來密封。梦而—丄 電 告田,… 幻不山封’然而’精由焊接來密封殼體時, :口漏電^於中間電極内部發生不良時,難以進行盆之 刀解及δ周整,而亦有維修性不佳的問題。 本發明係為解決上述課題而構成,目的在於提供—種 中間電極’其能以簡易之構成且使重量減輕以提高處理之 便利性亚提高進行分解及調整時之維修性、以及提供 使用其之壓力梯度型電漿搶。 為解決上述課題,本發明之一體型中間電極係具備: 具有導電性之第1殼體; 具有導電性之第1套筒,設置成與該第1殼 狀且與該第1殼體之内周面接觸; 第1磁石,與該第丨殼體呈同心狀收納於該第i殼體; 具有導電性之第2殼體,設置成與該第i殼體 # 狀; 平由 具有導電性之第2套筒,設置成與該第2殼體呈同心 狀且與該第2殼體之内周面接觸; 以及第2磁石,與該第2殼體呈同心狀收納於該第 殼體; 其中,該第1殼體與第2殼體係透過絕緣構件一體化。 200826748 r 依據上述之構成,便容易安裝於使用組裝有該—體型 中間電極之壓力梯度型電漿搶之裝置(例如:成膜裝置 該第1殼體具有c字形之截面以使與第2殼體 之面呈開放狀態;該第2殼體具有〔字形之截面以使斑第 殼體相對向之面呈開放狀態;該絕緣構件係形成為與該 第1殼體及該第2殼體呈同軸狀;該第i殼體及該第2殼 體之各個開放面係以該絕緣構件作為蓋子;該第丨磁石风 收納於該第1殼體與該絕緣構件間之空間且該第2磁石2 收納於該第2殼體與該絕緣構件間之空間;且該第丨殼體’、、 該絕緣構件、以及該第2殼體亦可藉由結合具彼此結又合。 依據上述之構成,由於構成中間電極之構成零件的件 數減少,因此可減輕其重量、提高處理之便利性。又,解 $結合具之結合以拆卸絕緣構件形成之蓋子,藉此在中間 電極内部產生不良時亦可進行分解及調整,以提升維修 C ㈣1殼體、該絕緣構件、以及該第2殼體亦可依序 做氣密式或液密式之接合。 ^通常係在中間電極内部形成有冷卻介質流路,冷卻介 質係流通於該冷卻介質流路。因此,藉由上述之構成,^ 防止冷卻介質之洩漏。 前述接合係使用0型環做成氣密或液密較佳。 藉由上述之構成,可容易地將該第i殼體、與該絕緣 構件、及該第2殼體做成氣密或液密。 本發明之壓力梯度型電漿槍係具備上述構成之一體型 200826748 中間電極中之任一個。 可提升將中間電極安裝於壓力梯度200826748 IX. Description of the Invention: [Technical Field] The present invention relates to a pressure gradient type plasma pulverizer used as a plasma source of a film forming apparatus, and an intermediate electrode used therefor. [Prior Art] In the past, a pressure gradient type plasma gun was used as a plasma source of a film forming apparatus. The pressure gradient type plasma gun is configured such that a cathode, a ring-shaped first intermediate electrode, a ring-shaped second intermediate electrode, and an insulating member interposed between the first intermediate electrode and the second intermediate electrode are coaxially arranged in a cylindrical container. . In the pressure gradient type electric gathering, the temporary assembly member temporarily assembles the first electrode and the second intermediate electrode, and the temporary assembly is attached to a force gradient type electric squirt gun. However, when the second intermediate electrode of the intermediate electrode disk of the 帛i is temporarily assembled, (iv) there is a case where the temporarily assembled member is detached, and there is a problem in handling. X: The first intermediate electrode and the second intermediate electrode are temporarily assembled with t, and the weight of the temporary assembly is also increased. Therefore, as shown in Patent Document 1, a pressure gradient type electric power has been disclosed: a fixing member in which an insulating member is assembled is used to secure an intermediate lightning type gradient pressure type plasma, since it can be individually eu : Well...intermediate electrode 'Therefore, there is no case where the temporary set member is detached. 2 The workability when the first intermediate electrode and the second intermediate electrode are attached to the core is raised. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 11-256319 A SUMMARY OF THE INVENTION The structure of the intermediate electrode and the 'patent document support means are set to be complicated. It is necessary to support the fixing member 2 intermediate electrode, and there is a structure to ensure the first! The intermediate electrode and the second intermediate electrode are sealed by welding the lid to the housing of the 矾k pole. Dreams - 丄电告田,... 幻不山封' However, when the welding is used to seal the casing, the leakage of the port is difficult to occur in the middle of the middle electrode, and it is difficult to perform the blade knives and δ weeks. Poor maintenance. The present invention has been made to solve the above-described problems, and an object of the present invention is to provide an intermediate electrode which can be easily configured and reduced in weight to improve the convenience of handling, improve the maintainability at the time of decomposition and adjustment, and provide for use thereof. Pressure gradient type plasma grab. In order to solve the above problems, an intermediate type electrode of the present invention includes: a first case having conductivity; a first sleeve having conductivity, and the first case and the inside of the first case The first magnet is accommodated in the i-th casing concentrically with the second casing; the second casing having conductivity is provided in the shape of the i-th casing; The second sleeve is disposed concentrically with the second casing and in contact with the inner circumferential surface of the second casing; and the second magnet is concentrically received with the second casing in the first casing The first case and the second case are integrated through the insulating member. 200826748 r According to the above configuration, it is easy to mount on a device using a pressure gradient type plasma assembled with the intermediate electrode of the body type (for example, a film forming apparatus, the first case has a c-shaped cross section to make the second case The second surface of the body has an open shape; the second housing has a cross section such that the surface of the plaque housing is open to the opposite side; the insulating member is formed to be opposite to the first housing and the second housing a coaxial shape; each of the open surfaces of the i-th casing and the second casing is a cover by the insulating member; the second magnet wind is accommodated in a space between the first casing and the insulating member, and the second magnet 2 accommodating a space between the second casing and the insulating member; and the second casing ', the insulating member, and the second casing may be joined to each other by a bonding tool. Since the number of components constituting the intermediate electrode is reduced, the weight thereof can be reduced, and the handling convenience can be improved. Further, the combination of the bonding tools can be used to remove the cover formed by the insulating member, thereby causing a defect in the inside of the intermediate electrode. Can also be decomposed and In order to improve the maintenance of the C (four) 1 casing, the insulating member, and the second casing, the gas-tight or liquid-tight joint may be sequentially performed. ^ Usually, a cooling medium flow path is formed inside the intermediate electrode, and cooling is performed. The medium is circulated in the cooling medium flow path. Therefore, the above-described configuration prevents leakage of the cooling medium. The bonding is preferably airtight or liquid-tight using a 0-ring. The ith housing, the insulating member, and the second housing are made airtight or liquid-tight. The pressure gradient type plasma gun of the present invention includes any one of the above-described configurations of the body type 200826748 intermediate electrode. Can be installed to install the middle electrode on the pressure gradient
藉由上述之構成,可提升將中 型電聚搶時之作業性。 本發明之壓丄w &瓜1 — μ,入* 電極、絕緣管、以及具備陰相 間電極較遠一端之陰極支架, 構成該壓力梯度型電漿槍。 藉由上述之構成,易於組裝壓力梯度型電漿搶。 本發明之上述目的、其他目的、特徵、以及優點,在 參照附加圖式下,從以下最佳實施形態之詳細說明即可清 楚了解。 本發明之一體型中間電極由於係如上述之構成,因此 可發揮能以簡易之構成且使重量減輕來提高處理之便利性 並在進行分解及調整時提升維修性的效果。 又,本發明之壓力梯度型電漿槍由於係如上述之構 成’因此可發揮易於安裝中間電極之效果。 【實施方式】 以下,參照圖式說明本發明之實施形態。 (實施形態) 圖1係表示使用本發明實施形態之壓力梯度型電漿搶 之薄層電漿成膜裝置之概略構成的示意圖。圖2係示意表 示沿中心軸垂直切斷本發明實施形態之壓力梯度型電漿搶 之狀態的截面圖。圖3係表示構成圖2之壓力梯度型電漿 9 200826748 槍之-體型t間電極的圖,⑷為左視圖、(b)為沿中心軸垂 直切斷-體型中間電極之狀態的截面圖、⑷為右視圖。此 外,圖3(b)中,絕緣軸環及結合具貫通第丨、第2殼體、 、及、、、a緣構件之部分係表示為局部切開之B — b截面圖。 以下,參照圖1至圖3說明本實施形態之壓力梯度型電漿 槍及一體型中間電極。此外,以下係關1之左側及圖2 之左側為前侧、以圖1之右側及圖2之右側為後側來說明。With the above configuration, the workability of the medium-sized electric gathering can be improved. The pressure grading type plasma gun of the present invention is composed of a compaction w & melon 1 - μ, an inlet electrode, an insulating tube, and a cathode holder having a distal end of the cathode electrode. With the above configuration, it is easy to assemble a pressure gradient type plasma grab. The above and other objects, features and advantages of the present invention will become apparent from Since the bulk type intermediate electrode of the present invention has the above-described configuration, it is possible to improve the handling convenience with a simple structure and reduce the weight, and to improve the maintainability during the decomposition and adjustment. Further, the pressure gradient type plasma gun of the present invention has the effect of facilitating the mounting of the intermediate electrode because it is constructed as described above. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. (Embodiment) FIG. 1 is a schematic view showing a schematic configuration of a thin-layer plasma film forming apparatus using a pressure gradient type plasma pulsing according to an embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing a state in which the pressure gradient type plasma of the embodiment of the present invention is cut perpendicularly along the central axis. 3 is a view showing a pressure-type plasma of the pressure gradient type plasma 9 200826748 of FIG. 2, wherein (4) is a left side view and (b) is a cross-sectional view of a state in which a body-shaped intermediate electrode is vertically cut along a central axis, (4) is the right view. Further, in Fig. 3(b), the portion of the insulating collar and the coupling member that penetrates the second, second, and/or a-edge members is shown as a partially cut B-b cross-sectional view. Hereinafter, a pressure gradient type plasma gun and an integrated intermediate electrode according to the present embodiment will be described with reference to Figs. 1 to 3 . In addition, the left side of the closure 1 and the left side of FIG. 2 are the front side, the right side of FIG. 1, and the right side of FIG. 2 are the rear side.
如圖1所不,本實施形態之壓力梯度型電漿搶】係使 用:例如薄層電漿成膜裝置⑽。此處,雖以薄層電聚成 膜衣置1 00為例作為使用有本實施形態之壓力梯度型電漿 % 1之成膜裝置’但當然不限於薄層電II成膜裝置100。 匕卜I力梯度型電漿槍1及一體型中間電極G之構成, 此處作簡單說明,之後再詳細說明。 垒梯度型電漿搶1係、具備陰極纟帛2、&安裝於古亥 陰極支架2之筒體10。於陰極支架2設置有陰極8。筒體 10具備絕緣管6、及—體型中間電極G。一體型中間電極 G係包含第i中間電極〜、第2中間電極A、以及絕 件1 6而構成。 陰極8(陰極支架2)與後述之陽極63係透過電阻rv分 別連接於主偏壓施加褒置%之負極端子及正極端子。第】 中間電極G〗,係透過雷阳p 、击& ^冤阻Ri連接於上述主偏壓施加裝置 ^丨之正極端子。第2 〇 少 、 〒間電極g2,係透過電阻r2連接於 上述主偏塵施加裳晉V + T: k 1之正極鳊子。藉由主偏壓施加襞置 '與電阻Rv,Rl5 R之έ人 2之組合’將既定偏壓施加於陰極8盥 10 200826748 陽極63之間。藉此,在壓力梯度型電漿搶1之陰極8附 近會產生圓筒狀電漿36。 於壓力梯度型電漿槍丨之前端係連接有薄層電漿形成 至30之後端。薄層電漿形成室3〇係筒狀構件31之後端 及前端分別藉由中央部開口之絕緣蓋構件29、及中央部開 口之第1凸緣3 9來封閉而形成。筒狀構件3丨係以非磁性 脱所構成。於筒狀構件3丨後端側之周圍,配設有用來整 理所&入之圓筒狀電漿36形狀的第1環狀線圈W。又, 於配設有筒狀構件31之第i環狀線圈32之位置的前方, 配叹有一對水久磁石33。一對永久磁石33係配設成使各 2之N極相對。一對永久磁石33係使所導入之圓筒狀電 漿36形成為薄層狀之電漿(以下稱為薄層狀電漿)。此 外,於筒狀構件31前端側之周圍,配設有用來整理所形 成之薄層狀電漿37形狀的第2環狀線圈34。 山於薄層電漿形成室30之前端係連接有成膜室4〇之 "而於缚層電裝形成室30所形成之薄層狀電衆37,係被 導入至成膜室40之内部。 係被 成膜至40係具備圓筒狀之腔室41。腔室4 =:广封閉,腔…一側之端部二 成。於腔係以非磁性材料,例如不錢鋼所構 、 之適s位置形成有排氣口 52。排氣口 < 以可藉由閥53來μ t m ^ 、 2係 空果54n閉的方式構成。於排氣口 52連接有真 、二泵54係將成膜室4〇(腔室41)之内 至能輸送薄層狀電漿37之既定壓力。於 =真空 〈内部, 11 200826748 靶保持具48與基材俾 妝雷將、, 你待具44係配設成挾持所導入之薄層 狀%水3 7亚相對向。 乾保持具4 8 ® + 么m ,、來保持靶材49。靶保持具係透過 絕緣構件51安梦於祕〜 玄—牡 '"至41。靶保持具48係對腔室41氣 被女t。於靶保持罝 —&, 、48連接有偏壓施加裝置V2。相對於As shown in Fig. 1, the pressure gradient type plasma paste of the present embodiment is used, for example, as a thin layer plasma film forming apparatus (10). Here, the thin film electropolymerization film forming apparatus 100 is taken as an example of the film forming apparatus using the pressure gradient type plasma %1 of the present embodiment, but it is of course not limited to the thin layer electric II film forming apparatus 100. The configuration of the I-gravity type plasma gun 1 and the integral type intermediate electrode G will be briefly described here, and will be described in detail later. The gradient gradient type plasma grab 1 system, which has a cathode crucible 2, & is mounted on the cylinder 10 of the Guhai cathode support 2 . A cathode 8 is provided on the cathode holder 2. The cylinder 10 is provided with an insulating tube 6 and a body-shaped intermediate electrode G. The integrated intermediate electrode G is composed of an i-th intermediate electrode ~, a second intermediate electrode A, and a permanent member 16. The cathode 8 (cathode holder 2) and the anode 63-based transmission resistor rv, which will be described later, are connected to the negative electrode terminal and the positive electrode terminal of the main bias application unit %, respectively. The middle electrode G is connected to the positive terminal of the main bias application device through the Leiyang p, the hit & The second and second inter-electrode g2 are connected to the positive electrode of the main dust by applying a resistance r2 to the positive electrode of the V + T: k 1 . A predetermined bias voltage is applied between the cathodes 8 盥 10 200826748 and the anodes 63 by the main bias application ' 'and the combination of the resistors Rv, Rl5 R έ 2 '. Thereby, a cylindrical plasma 36 is generated in the vicinity of the cathode 8 of the pressure gradient type plasma. A thin layer of plasma is attached to the rear end of the pressure gradient type plasma gun to form a rear end of 30. The rear end and the front end of the thin plasma forming chamber 3 are formed by being closed by an insulating cover member 29 having a central opening and a first flange 39 of the central opening. The tubular member 3 is formed by non-magnetic separation. A first loop coil W for arranging the shape of the cylindrical plasma 36 is placed around the rear end side of the tubular member 3 . Further, a pair of long-lasting magnets 33 are sighed in front of the position where the i-th toroidal coil 32 of the tubular member 31 is disposed. The pair of permanent magnets 33 are arranged such that the N poles of the respective two are opposed to each other. The pair of permanent magnets 33 form the introduced cylindrical plasma 36 into a thin layer of plasma (hereinafter referred to as a thin layer plasma). Further, a second loop coil 34 for arranging the shape of the thin layered plasma 37 formed is disposed around the front end side of the tubular member 31. The thin layered electricity 37 formed by the bonding layer forming chamber 30 is connected to the film forming chamber 40 at the front end of the thin plasma forming chamber 30. internal. The film is formed into a 40-series chamber 41 having a cylindrical shape. Chamber 4 =: Widely closed, the end of the cavity is on one side. An exhaust port 52 is formed in the cavity system at a position s of a non-magnetic material such as a non-ferrous steel. The exhaust port < is configured such that the valve 53 can be closed by μ m m ^ and the 2 system empty fruit 54n. A true pressure is connected to the exhaust port 52, and the second pump 54 connects the film forming chamber 4 (the chamber 41) to a predetermined pressure capable of transporting the thin layered plasma 37. In = Vacuum <Internal, 11 200826748 Target holder 48 and substrate 俾 雷 将 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Dry the holder 4 8 ® + m to maintain the target 49. The target holder is transmitted through the insulating member 51 to the secret ~ Xuan - Mu '" to 41. The target holder 48 is attached to the chamber 41 by the female t. A bias applying device V2 is connected to the target holding 罝-&, 48. Relative to
溥層狀電漿37之雷々Γ炎A 為負的偏壓係藉由該偏壓施加裝置V7 施加於靶保持具48。 因此,靶材49係由薄層狀電漿37中 之電漿粒子所濺射。 “另一方面’基材保持具44係、用來保持欲形成膜之基 。基材保持具44係透過絕緣構件50安裝於腔室41。 :材保持4 44係對腔室41氣密安裝。於基材保持具料 接有偏麼施加裝置%。相對於薄層狀電漿η之電位為 負的偏壓係藉由該偏摩施加裝置^施加於基材料具料。 因此,經濺射之靶材料堆積於基材45並形成膜。 於成膜室40之前端係連接有陽極室6〇之後 …系筒狀構件62之後端及前端分別藉由中央部開口之 弟2凸緣59及陽極63來封閉而形成。筒狀構件Q係以 2如玻璃構成。於筒狀構件62之周圍,配設有用來整理 潯層狀電聚37之形狀的第3環狀線圈61。陽極〇,如前 述般,係連接於主偏壓施加裝置Vi之正極端子。於陽極Μ 之内面,設有永久磁石64。永久磁石64係設置成其s極 舁陽極63接觸。永久磁石64係用來整理薄層狀電漿η 之末端的形狀。 又,薄層電漿成膜裝置100具備未圖示之控制裝置 12 200826748 控制裝置係控制主偏壓施加裝置 等之動作。控制裝置係以微電腦等運算;=… 層電聚成膜裝ϊ 100所,,之槿… 構成’控制薄 ai 所須之構成兀件,以控制薄>雷% $ 膜裝置1〇〇之動作。此處,本 成The bias voltage of the radonitis A of the layered plasma 37 is applied to the target holder 48 by the bias applying means V7. Therefore, the target 49 is sputtered by the plasma particles in the thin layered plasma 37. "On the other hand, the base material holder 44 is used to hold the base of the film to be formed. The substrate holder 44 is attached to the chamber 41 through the insulating member 50. The material holding 4 44 is airtightly mounted to the chamber 41. The substrate holding material is biased by the application device %. The bias voltage which is negative with respect to the potential of the thin layer plasma η is applied to the base material by the biasing application device. The target material is deposited on the substrate 45 and forms a film. After the anode chamber 6 is connected to the front end of the film forming chamber 40, the rear end and the front end of the cylindrical member 62 are respectively opened by the center portion. The cylindrical member Q is formed by closing the anode 63. The cylindrical member Q is made of, for example, glass. A third annular coil 61 for arranging the shape of the layered electropolymer 37 is disposed around the tubular member 62. As described above, it is connected to the positive terminal of the main bias applying means Vi. On the inner surface of the anode ,, a permanent magnet 64 is provided. The permanent magnet 64 is arranged such that its s pole is in contact with the anode 63. The permanent magnet 64 is used. Finishing the shape of the end of the thin layered plasma η. Further, the thin layer plasma film forming apparatus 100 Control device 12 (not shown) 200826748 The control device controls the operation of the main bias application device, etc. The control device is operated by a microcomputer or the like; =... The layer is electrically formed into a film device 100, and then ... constitutes a 'control thin ai The required components are controlled to control the thinness of the membrane device. Here, Bencheng
Lb g ^ 控制裝置係非僅 曰早獨之㈣器,„指複數個㈣器協 制之控制器群。因此,控制裝置未必以單獨之控制^^ 亦仏將複數個控制器分散配置並使該等控制器協調動作 以控制薄層電漿成膜裝置100之動作的方式構成。 簡單說明以以上方式構成之薄層電漿成膜裴置 動作。 由壓力梯度型電漿搶i所產生之圓筒狀電漿36,係藉 由溥層電漿形成室30之—對永久磁石33形成為薄層狀電 漿37。該薄層狀電漿37被導入至成膜室4〇,以將靶材49 濺射。被濺射之靶粒子,堆積於挾持薄層狀電漿37且配 置於相對向位置之基材45,並形成膜。 其夂’參照圖2詳細說明本實施形態之壓力梯度型電 漿槍1。此外,圖2中為說明方便,如前述般,係以圖2 之左側為前側、以右側為後側。 如圖2所示,本實施形態之壓力梯度型電漿搶丨係具 備陰極支架2。於陰極支架2之中央部(正確而言,係以位 於後述絕緣管6之中心軸201上之方式),形成有放電氣體 導入孔3’從該放電氣體導入孔3導入氬氣等放電氣體。 又,於陰極支架2之内部,形成有冷卻介質流路4,藉由 未圖示之冷卻介質循環機構冷卻介質流通於該冷卻介質流 13 200826748 路4。冷卻介質,在液體可列舉例如水、純水、乙二醇水The Lb g ^ control device is not only a single (four) device, but also refers to a controller group of a plurality of (four) devices. Therefore, the control device does not necessarily have to separate and configure multiple controllers with separate control and The controllers coordinately operate to control the operation of the thin-film plasma film forming apparatus 100. The thin layer plasma film forming apparatus configured in the above manner will be briefly described. The pressure gradient type plasma is used to generate the film. The cylindrical plasma 36 is formed by the plasma layer forming chamber 30. The permanent magnet 33 is formed into a thin layered plasma 37. The thin layered plasma 37 is introduced into the film forming chamber 4〇 to The target material 49 is sputtered, and the target particles to be sputtered are deposited on the substrate 45 which is held by the thin layered plasma 37 and placed at a relative position to form a film. The pressure of this embodiment will be described in detail with reference to FIG. The gradient type plasma gun 1. In addition, in FIG. 2, for convenience of description, as shown above, the left side of FIG. 2 is the front side and the right side is the rear side. As shown in FIG. 2, the pressure gradient type plasma of the present embodiment is as shown in FIG. The robbery system has a cathode support 2. In the central part of the cathode support 2 (correctly, The discharge gas introduction hole 3' is formed to introduce a discharge gas such as argon gas from the discharge gas introduction hole 3 so as to be located on the central axis 201 of the insulating tube 6 to be described later. Further, a cooling medium is formed inside the cathode holder 2. The flow path 4 is circulated by the cooling medium circulation mechanism (not shown) to the cooling medium flow 13 200826748. The cooling medium may be, for example, water, pure water or glycol water.
洛液(防凍液)、以及氟系冷媒等,在氣體可列舉例如=、 氬、以及氮等。 X 於陰極支架2之前端係安裝有圓筒狀絕緣管6之後 立而。纟巴緣管6係以絶緣材料例如玻璃、陶莞等構成今^ 緣管6與分別後述之一體型中間電極G、以及絕緣軸環μ 構成筒體ίο。筒體ίο在本實施形態中為圓筒體。筒體ι〇 之開口(參照圖1)構成電毀流出口。 _ 於陰極支架2,係將陰極8以突出至絕緣管6内部之 該絕緣管6的中心軸201上之方式設置。陰極8係具備放 電氣體流路7。從放電氣體導入孔3導入之放電氣體係流 通於放電氣體流路7。 於絕緣管6之前端,安裝有一體型中間電極一體 型中間電極G,如前述般,係包含第丄中間電極、絕緣 構件16、以及第2中間電極G2而構成。關於一體型中間 電極G之構成,之後再詳細說明。 於一體型中間電極G之前端,安裝短圓筒狀之絕緣軸 每24的後端。絕緣軸環24係配置成與絕緣管6呈同軸狀 且在其兩端面配設有未圖示之密封構件例如〇型環。構成 絕緣軸環24之材料方面係使用聚四氟乙烯或陶瓷等絕緣 材料。絕緣軸環24之前端,安裝有未圖示之圓環之板狀 導弓丨構件。絕緣軸環24係確保一體型中間電極G與導引 構件之絕緣性。 接著’壓力梯度型電漿搶1係透過導引構件安裝於薄 14 200826748 層電漿成膜裝置100(更具體而言, ^ 室30之絕緣蓋構件29)。 ’、衣於薄層電漿形成 其次,參照圖3詳細說明一 此外,以下說明中之前端盥 " B電極G之構造。 與「後」對應。W舆圏2中所記載之「前」 備奸如圖^⑷,(b),⑷所示,—體型_間電極G係包含且 :1殼體U之第1中間電極、具備第2殼體17之第 中間電極g2、以及絕緣構件16而構成。 卓 第1殼體u係安裝於絕緣管6之前端(參照 1殼體"係形成為截面呈〔字形之圓環狀。此外,第工f 體11之形狀並不限於圓環狀,亦可形成為四角形、1又 形等環狀。第!殼體u之截面係形成為與第2般體17、 ’向之面呈開放狀態之匚字狀’且由帛i殼體" P: u b . /、柯* 圓 。狀之絕緣構件16所圍成之空間係構成冷卻介質流路 1、 设體11係將筒狀之第1套筒12設置成與第丨彀體 11之内周面接觸。於第1套筒12之外周,形成有例如八 虫累好 ^ ”、、、又’該公螺紋係設置成與形成於第1殼體11之内周的 母螺紋螺合。第1套筒12係設置成與第1殼體丨丨呈同心 狀。第1殼體1 1與第1套筒12即構成第i中間電極 1套筒12係以高熔點且導電性之材料例如鎢或鉬等構 成。第1套筒12係提升第1殼體11對所產生之圓筒狀電 製36之耐熱性。 於第1殼體11形成有冷卻介質入口 111及冷卻介質 出D 112。本實施形態中,冷卻介質入口 111及冷卻介質 15 200826748 出口 112係形成為貫通位於第1殼體n之外周壁周緣方 向之相對部分即相對於第1殼體1 1之中心為水平方向的 部分。於冷卻介質入口 lu及冷卻介質出口 112連接有未 圖示之冷卻介質循環機構,藉由該冷卻介質循環機構冷卻 介質流通於冷卻介質流路14。冷卻介質,在液體方面可列 舉例如水、純水、乙二醇水溶液(防凍液)、以及氟系冷媒 等’在氣體方面可列舉例如氦、氬、以及氮等。於第1殼 體11係將截面為矩形之環狀永久磁石(第丨磁石)15收納 成沿著冷卻介質流路14之内周。此外,永久磁石15之形 狀可依照第1殼體丨丨之形狀適當地予以變更,例如形成 四角形、六角形等環狀亦可。永久磁石1 5係收納成與第1 殼體11呈同心狀。換言之,冷卻介質係流通於形成在第i 中間電極G〗内部之冷卻介質流路14,且永久磁石15係接 觸於該冷卻介質。永久磁石15係以第1殼體n之内周壁 與絕緣構件1 6之側壁夾入,藉此決定位置。 如圖3(b),(c)所示,於第丨殼體π之後端設有第i保 護板13。第1保護板13係保護第1殼體u之側面(端面) 不受因電漿所造成之濺射。又,於第丨殼體u後端之面, 將螺孔1 1 4形成為在周緣方向隔著既定間隔。藉由將螺絲 (未圖示)鎖入該螺孔114以結合(固定)第1殼體n與絕 緣管6。此外,於第1殼體丨丨後端之面,形成有環狀之〇 型環槽113。將Ο型環(未圖示)嵌插於該〇型環槽113以 安裝絕緣管6,藉此氣密接合第1殼體π與絕緣管6。 於第1中間電極Gi之前端,配設有短圓筒狀之絕緣構 200826748 件16。此外,絕緣構件16之形狀不限於圓筒狀,可依照 第1殼體11及第2殼體17之形狀適當地予以變更,例如 形成四角形、六角形等筒狀亦可。絕緣構件16係配置成 與絕緣官6呈同軸狀。絕緣構件丨6係以絕緣材料例如聚 四氣乙烯或陶竟等構成。絕緣構件16係使帛i中Μ電極A 與後述第2中間電極g2絕緣。 於絕緣構件16之前端係設有第2殼體17之後端。第 2设體1 7係形成為截面呈〔字形之圓環狀。此外,第2殼 體1 7之形狀亚不限於圓環狀,依照第i殼體i丄之形狀亦 可形成為四角形、六角形等環狀。第2殼體17之截面係 形成為與帛1殼體1 1相對向之面呈開放狀態之匸字狀, 由第2设體17與短圓筒狀之絕緣構件μ所圍成之空間係 構成冷部介質流路20。於第2殼體17將環狀之第2套筒 °又置成沿著第2殼體P之内周Φ。於第2套筒18之外 周形成有例如公螺紋,該公螺紋係設置成與形成於第2 设體17之内周尹 ^ 乃的母螺紋螺合。第2套筒18係設置成與第 2冗又體1 7呈同η、、仙 ^ J “狀。弟2殼體17與第2套筒18即構成第 2中間電極G 。楚1 + 2弟2套筒18係以高熔點且導電性之絲祖 例如鎢或翻I m ^ 带 、 。第2套筒12係提升所產生之圓筒狀 -水通過時第2殼體17之耐熱性。 於第2轉辦Ί ” 双體17形成有冷卻介質入口 ι71及冷卻 出口 172。太杂a I貝 只化形態中,冷卻介質入口 1 71及冷卻介皙 出口 172係形士劣 貝 ’、/成為貫通位於第2殼體17之外周壁周缘古 向之相對部八 土门緣方 刀、即相對於第2殼體17之中心為水平方向 17 200826748 的部分。於冷卻介質入口 171及冷卻介質出口 172連接有 未圖示之冷卻介質循環機構,藉由該冷卻介質循環機構△ 卻介質流通於冷卻介質流路20。冷卻介質,在液體方面可 列舉例如水、純水、乙二醇水溶液(防凍液)、以及氟系冷 卻介質等,在氣體方面可列舉例如氦、氬、以及氮等。於 第2殼體17係將截面為矩形之圓環狀電磁線圈(第2磁 石)2 1收納成與冷卻介質流路20之内周接觸。此外,電磁 , 線圈2 1之形狀可依照第2殼體1 7之形狀適當地予以變更, 例如形成四角形、六角形等環狀亦可。電磁線圈21係收 納成與第2殼體17呈同心狀。換言之,冷卻介質係流通 於形成在第2中間電極〇2内部之冷卻介質流路2〇,且電 磁線圈21係接觸於該冷卻介質。電磁線圈21係捲成環狀。 電磁線圈21係以絕緣構件16之側壁與第2殼體17之内 周壁夾入,藉此決定位置。 於第2设體17之前端設有第2保護板19。第2保護 1 板19係保護第2殼體17之側面(端面)不受因電漿所造成 之濺射又,於第2殼體17前端之面,形成有環狀之〇 =環槽173。將〇型環(未圖示)嵌插於該〇型環槽173以 安裝絕緣軸環24,藉此氣密接合第2殼體17與絕緣軸環 24 、、巴緣軸裱24係形成為短圓筒狀。此外,絕緣軸環24 之形狀可依照第2殼體17之形狀適當地予以變更,例如 形成四角形、六角形等筒狀亦可。又,於第1殼體11、第 2 "又體17、以及絕緣構件丨6形成有螺拴孔28(參照圖3(b) 及(c))螺栓孔28係由分別形成於第丨殼體丨丨及絕緣構 18 200826748 件16之貫通孔28a及28b、與形成於第2殼體i7之螺孔 所構成。接著’將筒狀之絕緣軸環26插通於該貫通孔W 娜,且將螺栓(結合具)27插通於該絕緣軸冑%並螺入螺 孔28c ’藉此將第【殼體u與絕緣構件16與第2殼體η 彼此結合並一體化。藉此,絕緣構件16係於形成為〔字 :之第i殼體U及第2殼體17的開放面作為蓋子。亦即, 弟1殼體11及第2殼體17之各個開放面係藉由絕緣構件 16來封閉。於第i殼體U及第2殼體17之既定位 有〇型環槽22,〇型環23係、嵌插於該〇型環槽22。夢此 =殼體u、絕緣構件16、以及第2殼體17即料 欲式或液密式之接合。巾即,使用氣體冷卻介f時” 二二1 '%緣構件16、以及第2殼體17即依序做氣密式 接口。另-方面,使用液體冷卻介質時,帛i殼 、 系巴緣構件16、以及第2却·辦 1 g — 以及弟2喊體17即依序做液密式之接人。 k 是以’可確保絕緣構件16料i殼體u及第2 D 之密閉:,以防止冷卻介質從一體型中間電極茂漏。 於弟1殼體11、絕緣構件16、以及第2殼體i 於與螺栓孔28偏離既定中心自之彳 ,、 25以貫通”…… 形成螺松插通孔 〜亥3(a)至⑷)。該螺栓插通孔 分別形成於第i殼體U、絕緣構件i '、 之書诵π w A汉昂2设體17 之貝通孔25a,25b, 25e所構成,將螺栓(結合具 插通於該螺}入4千、s 了丨〇 ς 木^圖不) 首、王、 ,並藉由將該螺栓(結合具)螺入於 :不導引構件,一體型中間電極G(或組裝有_體型中 曰電極G之壓力梯度型電裝搶⑽透過導引構件,安袭於 19 200826748 薄層電漿成膜裝置100(更具體而言,係安裝於薄層電漿形 成室30之絕緣蓋構件29)。 此處,第1殼體11及第2殼體17係以鋁合金構成較 佳。鋁合金由於比重小於使用在通常之中間電極的不鱗 鋼,因此可減輕第1殼體11及第2殼體17之重量。藉此, 提升處理第1殼體11及第2殼體17時之作業性。Examples of the gas (antifreeze), fluorine-based refrigerant, and the like include, for example, argon, nitrogen, and the like. X is attached to the front end of the cathode holder 2 with a cylindrical insulating tube 6 attached thereto. The smear-edge tube 6 is formed of an insulating material such as glass, ceramics, or the like, and the body-shaped intermediate electrode G and the insulating collar μ, which will be described later, constitute a cylindrical body. The cylinder ίο is a cylindrical body in this embodiment. The opening of the cylinder ι (see Fig. 1) constitutes an electrical rupture outlet. In the cathode holder 2, the cathode 8 is disposed so as to protrude onto the central axis 201 of the insulating tube 6 inside the insulating tube 6. The cathode 8 is provided with a discharge gas flow path 7. The discharge gas system introduced from the discharge gas introduction hole 3 flows through the discharge gas flow path 7. The integral intermediate electrode-integrated intermediate electrode G is attached to the front end of the insulating tube 6, and as described above, the second intermediate electrode, the insulating member 16, and the second intermediate electrode G2 are included. The configuration of the integrated intermediate electrode G will be described in detail later. At the front end of the integral intermediate electrode G, a short cylindrical insulating shaft is mounted at the rear end of each of 24. The insulating collar 24 is disposed coaxially with the insulating tube 6, and a sealing member (not shown) such as a 〇-shaped ring is disposed on both end surfaces thereof. The material constituting the insulating collar 24 is made of an insulating material such as polytetrafluoroethylene or ceramic. A plate-like guide member of a ring (not shown) is attached to the front end of the insulating collar 24. The insulating collar 24 ensures insulation between the integral intermediate electrode G and the guiding member. Next, the 'pressure gradient type plasma grab 1 is attached to the thin plasma film forming apparatus 100 (more specifically, the insulating cover member 29 of the chamber 30) through the guide member. The formation of the thin layer plasma is described in detail with reference to Fig. 3. In addition, in the following description, the structure of the front end "B electrode G is described. Corresponds to "after". "Previous" in W舆圏2, as shown in (4), (b), and (4), the body type_interelectrode G includes: 1 the first intermediate electrode of the casing U, and the second casing The intermediate electrode g2 of the body 17 and the insulating member 16 are formed. The first housing u is attached to the front end of the insulating tube 6 (refer to the 1 housing), which is formed in a ring shape in a zigzag shape. Further, the shape of the first working body 11 is not limited to the annular shape. It can be formed into a square shape such as a square shape or a one-piece shape. The cross section of the first housing u is formed in a U-shaped shape with the second body 17 and 'open to the surface' and is made of the 壳体i casing" The space enclosed by the insulating member 16 in the form of a ub. / ke * is formed as a cooling medium flow path 1. The body 11 is provided with the cylindrical first sleeve 12 and the inside of the first body 11. The circumferential surface is in contact with the outer circumference of the first sleeve 12, for example, eight worms are formed, and the male screw is provided to be screwed to the female thread formed on the inner circumference of the first casing 11. The first sleeve 12 is provided concentrically with the first casing 。. The first casing 1 1 and the first sleeve 12 constitute the ith intermediate electrode 1 and the sleeve 12 is made of a material having high melting point and conductivity. For example, tungsten or molybdenum is used. The first sleeve 12 lifts the heat resistance of the cylindrical casing 36 generated by the first casing 11. The first casing 11 is formed with a cooling medium inlet 111 and a cooling medium. In the present embodiment, the cooling medium inlet 111 and the cooling medium 15 200826748 are formed so as to penetrate through the center of the peripheral wall of the first casing n, that is, with respect to the center of the first casing 1 1 . In the horizontal direction, a cooling medium circulation mechanism (not shown) is connected to the cooling medium inlet lu and the cooling medium outlet 112, and the cooling medium circulation mechanism flows through the cooling medium flow path 14. The cooling medium can be liquid. For example, water, pure water, an aqueous glycol solution (antifreeze), and a fluorine-based refrigerant, etc., may be, for example, helium, argon, or nitrogen. The first casing 11 has a rectangular cross section. The permanent magnet (the second magnet) 15 is accommodated along the inner circumference of the cooling medium flow path 14. The shape of the permanent magnet 15 can be appropriately changed according to the shape of the first casing ,, for example, a square shape, a hexagon shape, or the like. The permanent magnet 15 is housed in a concentric shape with the first casing 11. In other words, the cooling medium flows through the cooling medium formed inside the i-th intermediate electrode G. The permanent magnet 15 is in contact with the cooling medium, and the permanent magnet 15 is sandwiched by the inner peripheral wall of the first casing n and the side wall of the insulating member 16 to determine the position. As shown in Fig. 3(b), c), the i-th protection plate 13 is provided at the rear end of the second casing π. The first protection plate 13 protects the side surface (end surface) of the first casing u from sputtering by the plasma. The screw hole 1 14 is formed at a predetermined interval in the circumferential direction on the surface of the rear end of the second casing u. The screw (not shown) is locked in the screw hole 114 to be coupled (fixed) first. The casing n and the insulating tube 6. Further, an annular ring-shaped annular groove 113 is formed on the surface of the rear end of the first casing. A Ο-shaped ring (not shown) is inserted into the 〇-shaped ring groove 113 to mount the insulating tube 6, whereby the first casing π and the insulating tube 6 are hermetically joined. At the front end of the first intermediate electrode Gi, a short cylindrical insulating structure is provided. Further, the shape of the insulating member 16 is not limited to a cylindrical shape, and may be appropriately changed in accordance with the shapes of the first casing 11 and the second casing 17, and may be formed in a tubular shape such as a quadrangular shape or a hexagonal shape. The insulating member 16 is disposed coaxially with the insulating member 6. The insulating member 6 is made of an insulating material such as polytetraethylene or ceramic. The insulating member 16 insulates the tantalum electrode A in 帛i from the second intermediate electrode g2 described later. A rear end of the second casing 17 is provided at a front end of the insulating member 16. The second body 1 7 is formed in a ring shape in a zigzag shape. Further, the shape of the second casing 17 is not limited to an annular shape, and may be formed into a ring shape such as a quadrangle or a hexagon according to the shape of the i-th casing. The cross section of the second casing 17 is formed in a U-shape that is open to the surface of the casing 1 1 , and is surrounded by the second casing 17 and the short cylindrical insulating member μ. The cold portion medium flow path 20 is formed. In the second casing 17, the annular second sleeve ° is placed along the inner circumference Φ of the second casing P. For example, a male screw is formed on the outer circumference of the second sleeve 18, and the male screw is provided to be screwed to a female screw formed on the inner circumference of the second installation body 17. The second sleeve 18 is provided in the same manner as the second redundant body 17 and is in the same shape as the second redundant body. The second casing 18 and the second sleeve 18 constitute the second intermediate electrode G. Chu 1 + 2 The sleeve 2 is made of a high-melting-point and conductive filament progenitor such as tungsten or I m ^ belt. The second sleeve 12 is used to raise the heat resistance of the second casing 17 when the cylindrical-water passage is generated. The second body 17 is formed with a cooling medium inlet ι 71 and a cooling outlet 172. In the case of a too heterogeneous a I shell, the cooling medium inlet 117 and the cooling medium outlet 172 are inferior, and become the opposite part of the outer edge of the peripheral wall of the second casing 17 The square knives, that is, the portions in the horizontal direction 17 200826748 with respect to the center of the second casing 17 are. A cooling medium circulation mechanism (not shown) is connected to the cooling medium inlet 171 and the cooling medium outlet 172, and the medium flows through the cooling medium flow path 20 by the cooling medium circulation mechanism Δ. The cooling medium may, for example, be water, pure water, an aqueous glycol solution (antifreeze), or a fluorine-based cooling medium. Examples of the gas include helium, argon, and nitrogen. In the second casing 17, an annular electromagnetic coil (second magnet) 21 having a rectangular cross section is housed so as to be in contact with the inner circumference of the cooling medium flow path 20. Further, the shape of the electromagnetic coil 1 1 can be appropriately changed in accordance with the shape of the second casing 17 , and for example, a ring shape such as a quadrangle or a hexagonal shape can be formed. The electromagnetic coil 21 is received in a concentric shape with the second casing 17. In other words, the cooling medium flows through the cooling medium flow path 2〇 formed inside the second intermediate electrode 2, and the electromagnetic coil 21 is in contact with the cooling medium. The electromagnetic coil 21 is wound into a ring shape. The electromagnetic coil 21 is sandwiched between the side wall of the insulating member 16 and the inner peripheral wall of the second casing 17, thereby determining the position. A second protective plate 19 is provided at the front end of the second installation body 17. The second protection 1 plate 19 protects the side surface (end surface) of the second casing 17 from sputtering by the plasma, and forms an annular ring 环 = ring groove 173 on the front surface of the second casing 17 . A 〇-shaped ring (not shown) is inserted into the 〇-shaped ring groove 173 to mount the insulating collar 24, whereby the second casing 17 and the insulating collar 24 and the rim shaft 24 are hermetically joined to each other. Short cylindrical. Further, the shape of the insulating collar 24 can be appropriately changed in accordance with the shape of the second casing 17, and for example, a tubular shape such as a quadrangular shape or a hexagonal shape can be formed. Further, the first housing 11, the second "the body 17 and the insulating member 6 are formed with screw holes 28 (see Figs. 3(b) and (c)). The bolt holes 28 are formed in the third The casing 丨丨 and the insulating structure 18 are formed by the through holes 28a and 28b of the member 16 2008267 and the screw holes formed in the second casing i7. Then, the cylindrical insulating collar 26 is inserted into the through hole W, and the bolt (bonding device) 27 is inserted into the insulating shaft 胄% and screwed into the screw hole 28c'. The insulating member 16 and the second casing η are coupled to each other and integrated. Thereby, the insulating member 16 is formed as an opening on the open surface of the ith housing U and the second housing 17. That is, the respective open faces of the casing 1 and the second casing 17 are closed by the insulating member 16. The i-shaped ring groove 22 is positioned in the i-th housing U and the second housing 17, and the 〇-shaped ring 23 is inserted into the 〇-shaped ring groove 22. It is assumed that the housing u, the insulating member 16, and the second housing 17 are joined by a desired or liquid-tight type. That is, when the gas is used to cool the medium f, the 22'% edge member 16 and the second casing 17 are sequentially airtightly connected. On the other hand, when the liquid cooling medium is used, the shell and the shell are used. The edge member 16, and the second but the 1 g - and the second body 2 are sequentially liquid-tightly connected. k is to ensure the sealing of the insulating member 16 material i and the second D : to prevent the cooling medium from leaking from the integral type intermediate electrode. The housing 1 of the first housing 11, the insulating member 16, and the second housing i are offset from the predetermined center by the bolt hole 28, 25 is passed through... Form a loose plug hole ~ Hai 3 (a) to (4)). The bolt insertion holes are respectively formed in the i-th housing U, the insulating member i', and the beacon holes 25a, 25b, 25e of the book π w A Han's 2 body 17, and the bolts are inserted. In the snail} into the 4,000, s 丨〇ς ^ ^ ^ ^ ^ ^ ^ ^ 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首 首The pressure gradient type electric blasting (10) of the 曰 body type 曰 electrode G is transmitted through the guiding member, and is applied to the thin layer plasma film forming apparatus 100 of 19 200826748 (more specifically, it is installed in the thin layer plasma forming chamber 30). Insulation cover member 29) Here, the first case 11 and the second case 17 are preferably made of an aluminum alloy. The aluminum alloy can reduce the first case because the specific gravity is smaller than that of the ordinary intermediate electrode. The weight of the body 11 and the second casing 17 improves the workability when the first casing 11 and the second casing 17 are processed.
作為鋁合金之例,較佳係使用例如鋁一鎮系合金 (JIS5 000系列)、|呂一鎂一石夕系合金(JJS6000系列)、|呂— 鋅一鎂系合金(JIS7000系列),以供維持強度及耐腐蝕性。 又,於第1殼體11及第2殼體17與冷卻介質接觸部 分之表面(在第1殼體11及第2殼體17形成c字形之内側 部分的表面),形成具備導電性、非磁性、以及耐腐蝕性之 表面處理層較佳。該種具備導電性、非磁性、以及耐腐餘 性之表面處理層,例如可舉出無電鍍Ni層。藉此,抑制 第1殼體11及第2殼體17與冷卻介質接觸部分的劣化。 總括以上所述,可藉由以螺栓(結合具)27結合第1哼 體U、絕緣構件16、以及第2殼體17來組裝體型中= 電極G。X,可藉由進行其相反之作業來分解一體型中間 電極G。此外,已組裝之一體型中間電極〇可透過導引構 件安裝於薄層電毅形成室30之壁(絕緣構件29)。 本實施形態之-體型中間電極G,由於係設為上述構 成,因此可減少構成零件之件數,並可減輕其重量。又, 亦可將一體型中間電極〇製造成小型。藉此,提升安裝— 體型中間電極G時之作業性。此外 此外,由於藉由拆卸螺栓27 20 200826748 可將第1磁石15自第1殼體11拆下且可將第2磁石 自第2殼體17拆下,因此提升中間電極之維修性。 此外’本貫施形態中’雖將構成壓力梯度型電漿搶1 之筒體10設為圓筒體,但其截面形狀為任意形狀,例如 與中心軸垂直方向之截面形狀為正多角形亦可。 又,雖設置成使形成有公螺紋之第i套筒12及第2 套筒18分別螺合於第丨殼體n及第2殼體17之内周, 但亦可將無公螺紋之第1套筒12及第2套筒18分別沿著 第1叙體1 1及第2殼體17之内周插通後,自其外側分別 利用保護板13,19來夾入。依據上述之構成,可防止螺紋 之炫合並易於更換第丨套筒12及第2套筒18。 本發明所屬技術領域中具有通常知識者應能從上述說 明了解本發明之許多改良或其他實施形態。是以,上述說 明隸作為例示來解釋’提供其之目的在於將實行本發明 之取佳形態示範給具有通常知識者。可在不超出本發明之 精神下,實質地變更其詳細構造及/或功能。 本i明之一體型中間電極係有用於作為以簡易之構成 ?吏重量減輕以提高處理之便利性並提高進行分解及調整 時之維修性的中間電極。 本1明之壓力梯度型電漿槍係有用於作為提升安裝中 間包極日守之作業性的壓力梯度型電漿搶。 【圖式簡單說明】 圖係表不使用本發明之實施形態之壓力梯度型電漿 21 200826748 搶之薄層電漿成膜裝置之概略構成的示意圖。 处 圖2係示意表示沿中心軸垂直切斷本發明之實施形悲 之壓力梯度型電漿槍之狀態的截面圖。 圖3係表示構成圖2之壓力梯度型電漿搶之一體型中 間電極的圖’⑷為左視圖、(b)為沿中心軸垂直切斷 中間電極之狀態的截面圖、(c)為右視圖。 & 【主要元件符號說明】 1 壓力梯度型電漿槍 2 陰極支架 3 放電氣體導入孔 4 冷卻介質流路 6 絕緣管 7 放電氣體流路 8 陰極 10 筒體 11 第1殼體 12 第1套筒 13 第1保護板 H,20 冷卻介質流路 15 永久磁石(第1磁石) 16 絕緣構件 17 第2殼體 18 第2套筒 22 200826748 19 第2保護板 21 電磁線圈(弟2磁石) 22 0型環槽 23 0型環 24 絕緣軸環 25 螺栓插通孔 25a, 25b,25c貫通孔 26 絕緣軸環 27 螺栓(結合具) 28 螺栓孔 28a, 28b 貫通孔 28c 螺孔 29 絕緣蓋構件 30 薄層電漿形成室 31 筒狀構件 32 第1環狀線圈 33 永久磁石 34 第2環狀線圈 36 圓筒狀電漿 37 薄層狀電漿 39 第1凸緣 40 成膜室 41 腔室 42 上蓋 23 200826748As an example of the aluminum alloy, for example, an aluminum-based alloy (JIS 5 000 series), a LV-magnesium-based alloy (JJS6000 series), and a Zn-zinc-magnesium alloy (JIS 7000 series) are preferably used for maintaining strength. And corrosion resistance. Further, the surface of the contact portion between the first casing 11 and the second casing 17 and the cooling medium (the surface of the inner portion of the c-shaped portion formed in the first casing 11 and the second casing 17) is formed to be electrically conductive or non-conductive. A magnetically and corrosion-resistant surface treatment layer is preferred. Such a surface-treated layer having conductivity, non-magnetic properties, and corrosion resistance may, for example, be an electroless Ni layer. Thereby, deterioration of the contact portion between the first casing 11 and the second casing 17 and the cooling medium is suppressed. As described above, the body type = electrode G can be assembled by joining the first body U, the insulating member 16, and the second case 17 with bolts (joints) 27. X, the integral intermediate electrode G can be decomposed by performing the opposite operation. Further, an assembled intermediate electrode 〇 can be attached to the wall (insulating member 29) of the thin layer forming chamber 30 through the guiding member. Since the body type intermediate electrode G of the present embodiment has the above configuration, the number of components can be reduced, and the weight can be reduced. Further, the integrated intermediate electrode 亦可 can also be made small. Thereby, the workability when mounting the body type intermediate electrode G is improved. Further, since the first magnet 15 can be detached from the first casing 11 by the detaching bolt 27 20 200826748 and the second magnet can be detached from the second casing 17, the maintainability of the intermediate electrode can be improved. Further, in the 'in the present embodiment', the cylindrical body 10 constituting the pressure gradient type plasma is used as a cylindrical body, but the cross-sectional shape thereof is an arbitrary shape, for example, the cross-sectional shape perpendicular to the central axis is a positive polygonal shape. can. Further, although the i-th sleeve 12 and the second sleeve 18 in which the male screw is formed are screwed to the inner circumferences of the second housing n and the second housing 17, respectively, the male threadless portion may be provided. The sleeve 12 and the second sleeve 18 are respectively inserted along the inner circumferences of the first and second housings 1 and 17 and are sandwiched by the protective plates 13 and 19 from the outside. According to the above configuration, it is possible to prevent the thread from being slid and to easily replace the second sleeve 12 and the second sleeve 18. Many modifications and other embodiments of the invention will be apparent to those skilled in the <RTIgt; It is to be understood that the foregoing description is intended to be illustrative of the embodiments of the invention. The detailed construction and/or function may be substantially changed without departing from the spirit of the invention. The intermediate electrode of the present invention is an intermediate electrode which is used as a simple structure to reduce the weight, to improve the handling convenience, and to improve the maintainability during decomposition and adjustment. The pressure gradient type plasma gun of the present invention is used as a pressure gradient type plasma grab for the workability of the middle of the installation. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a schematic configuration of a thin layer plasma film forming apparatus which is not used in the embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing a state in which the pressure gradient type plasma gun of the present invention is cut perpendicularly along the central axis. Fig. 3 is a cross-sectional view showing a state in which the intermediate electrode of the pressure gradient type plasma of Fig. 2 is taken as a left side view, (b) is a state in which the intermediate electrode is vertically cut along the central axis, and (c) is right. view. & [Main component symbol description] 1 Pressure gradient type plasma gun 2 Cathode holder 3 Discharge gas introduction hole 4 Cooling medium flow path 6 Insulation tube 7 Discharge gas flow path 8 Cathode 10 Cylinder 11 First case 12 First set Cartridge 13 First protection plate H, 20 Cooling medium flow path 15 Permanent magnet (first magnet) 16 Insulating member 17 Second housing 18 Second sleeve 22 200826748 19 Second protection plate 21 Electromagnetic coil (2 magnet) 22 0 type ring groove 23 0 type ring 24 Insulation collar 25 Bolt insertion hole 25a, 25b, 25c through hole 26 Insulation collar 27 Bolt (bonding) 28 Bolt hole 28a, 28b Through hole 28c Screw hole 29 Insulation cover member 30 Thin layer plasma forming chamber 31 cylindrical member 32 first toroidal coil 33 permanent magnet 34 second toroidal coil 36 cylindrical plasma 37 thin layered plasma 39 first flange 40 film forming chamber 41 chamber 42 Upper cover 23 200826748
43 下蓋 44 基材保持具 45 基材 48 靶保持具 49 靶材 50, 51 絕緣構件 52 排氣口 53 閥 54 真空泵 59 第2凸緣 60 陽極室 61 第3環狀線圈 62 筒狀構件 63 陽極 64 永久磁石 111, 171 冷卻介質入口 112, 172 冷卻介質出口 113, 173 0型環槽 114 螺孔 201 中心軸 G 一體型中間電極 第1中間電極 g2 第2中間電極 Rv,Ri,R2 電阻 24 200826748 V! V25 V3 主偏壓施加裝置 偏壓施加裝置 2543 lower cover 44 substrate holder 45 substrate 48 target holder 49 target 50, 51 insulating member 52 exhaust port 53 valve 54 vacuum pump 59 second flange 60 anode chamber 61 third annular coil 62 cylindrical member 63 Anode 64 permanent magnet 111, 171 cooling medium inlet 112, 172 cooling medium outlet 113, 173 0 type ring groove 114 screw hole 201 central axis G integral type intermediate electrode first intermediate electrode g2 second intermediate electrode Rv, Ri, R2 resistance 24 200826748 V! V25 V3 main bias application device bias application device 25
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JP4358962B2 (en) * | 1999-08-31 | 2009-11-04 | 中外炉工業株式会社 | Pressure gradient type plasma gun |
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