TW200816517A - Semiconductor high-power light-emitting module with heat isolation - Google Patents

Semiconductor high-power light-emitting module with heat isolation Download PDF

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Publication number
TW200816517A
TW200816517A TW95136460A TW95136460A TW200816517A TW 200816517 A TW200816517 A TW 200816517A TW 95136460 A TW95136460 A TW 95136460A TW 95136460 A TW95136460 A TW 95136460A TW 200816517 A TW200816517 A TW 200816517A
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Taiwan
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heat
emitting module
light
semiconductor light
diode
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TW95136460A
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Chinese (zh)
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TWI328292B (en
Inventor
Jen-Shyan Chen
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Neobulb Technologies Inc
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Priority to TW95136460A priority Critical patent/TWI328292B/en
Publication of TW200816517A publication Critical patent/TW200816517A/en
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Publication of TWI328292B publication Critical patent/TWI328292B/en

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Abstract

The invention provides a semiconductor high-power light-emitting module including a heat-dissipating member, a heat-conducting device, and a diode light-emitting device. The heat-dissipating member includes an isolator member coupled to a first side of the heat-dissipating member. The heat-dissipating member has a second side opposite to the first side. The isolator member has a third side opposite to the first side. The environment temperature at the third side is higher than that at the second side. The heat-conducting device has a flat end and a contact portion tightly mounted on the heat-dissipating member. The diode light-emitting device is disposed on the flat end of the heat-conducting device. The semiconductor light-emitting module of the invention, applied to a headlamp of an automobile, has properties of saving electricity and long life, and furthermore the capability of integrating the heat-dissipating member into a shell of the automobile is both artistic and practical.

Description

200816517 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種半導體發光模組(semiec)nduetOT light-emitting module),並且特別地,本發明係關於—種具有高散 熱效率之半導體高功率發光模組。 、门月 【先前技術】 由於發光二極體(Light-emitting diode,LED)具有如省電、耐 震、反應快以及適合量產等許多優點。因此,目前以發光二極體 為光源的照明設備持續被研究、發展。然而高功率之發光二極體 產生的熱量亦高,所以散熱問題在此領域成為主流。一般的散熱 方式係以一散熱體(可能包含數個鰭片)置於一較低溫的環境中= 散熱。惟在許多實際應用中,該散熱體設置於該較高溫的環境中, 致使發光一極體接點溫度(Junction temperature)居高不下,大大土士 的影響發光二極體發光效率及壽命。 % 5 舉例而言,在傳統相頭燈市場中,以較燈為主流 亮度不足以及壽命不長是其缺點。針對這個缺點, 咼密度氣體放電(High Intensity Discharge,HID)燈提供解氺方宏。 ί而所放電原_兩電極間的電弧發 駕_“';環的;=目=量’應該避免置 極體裝置替換頭燈,則其散敎裝3率之發光二 此將使其承糾料妓, 的環将綠,能在有溫差 【發明内容】 本發明之-鱗在於提供—種轉财光模組。 5 200816517 根據一較佳具體實施例,本發明之半導體發光模組包含一散 熱體(Heat-dissip—g member)、一長條形導熱元件(Heat-c〇nducting device)以及一二極體發光元件(Diode light_emitting 。該散 熱體具有一絕熱體(Isolator member)耦合在該散熱體之一第一侧 上,该散熱體具有一相對於該第一侧之一第二侧,該絕熱體具有 相對於該第-側之-第三侧,該第三侧之環境溫度高於該第二 側之環境溫度。該導熱元件具有一平整端(Flat end)以及一接觸部 (Contact portion)’該接觸部設置於該散熱體與該絕熱體之間並緊密 貼a在該政熱體上。該導熱元件之長寬比大於2。該二極體發光元 件之一底部係緊密貼合在該導熱元件之平整端上,該二極體發光 =件均能將一電能(Electric energy)轉換成一光線(Ught)。該導熱元 ^可為一熱導管(Heatpipe)或其他具高導熱效率之裝置。該二極體 2光元件包含至少一個發光一極體晶粒 或至少一個雷射二極體晶粒(Laser di〇de die)。該等導熱元件之接 =得以’板固定於該散熱部分。於該二極體發光g件運作過 產生之熱可經由該導熱元件傳導至該散熱體,再由該散熱 ,據錄佳具體實施例,本發明之半導體發紐組係能應用 乂力車頭燈,忒政熱體可銜接至該汽車體上(例如保險桿後方之 或整合在該汽車外殼上另外,因為汽車頭燈的位置盘引擎 =_裝置相當靠近,所以該半導體發光模組包含該絕献體 =隔㈣科高絲置難生之鱗錄鍾環境溫度影響。並 技雜步使用絕熱套(IS〇lat〇rSleeVe)&覆該二極體發光元件與該 ίΪίΐΐί熱^以進—步減少引擎等高熱裝置所產生之高溫 ^對该導熱兀件高速導熱之影響。為增強散熱效率,多個鍵 =)成形在該散熱體之第二侧上。此外,該半導體發光模組^一 二G合一控制電路(c〇ntr〇1 電性連接至該二極體發光元200816517 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light emitting module (semiec) nduetOT light-emitting module, and in particular, the present invention relates to a semiconductor high power with high heat dissipation efficiency Light module. [Front Technology] Light-emitting diodes (LEDs) have many advantages such as power saving, shock resistance, fast response, and mass production. Therefore, the current lighting equipment using light-emitting diodes as a light source has been continuously researched and developed. However, the heat generated by the high-power light-emitting diode is also high, so the heat dissipation problem has become mainstream in this field. The general way of dissipating heat is to place a heat sink (possibly containing several fins) in a lower temperature environment = heat dissipation. However, in many practical applications, the heat sink is disposed in the higher temperature environment, resulting in a high junction temperature of the light-emitting body, and greatly affecting the luminous efficiency and life of the light-emitting diode. % 5 For example, in the traditional phase lamp market, the lack of brightness and long life is the disadvantage. In response to this shortcoming, the High Intensity Discharge (HID) lamp provides a solution. ί and the original discharge _ between the two electrodes of the arc drive _ "'; ring; = mesh = amount ' should avoid the pole device replacement headlights, then its diffuse 3 rate of light will be its The semiconductor ring of the present invention comprises a semiconductor light emitting module according to a preferred embodiment. The invention provides a semiconductor lighting module according to a preferred embodiment. a heat sink (Heat-dissip-g member), a long heat conduction element (Heat-c〇nducting device), and a diode light-emitting element (Diode light_emitting). The heat sink has an Isolator member coupled thereto. On a first side of the heat sink, the heat sink has a second side opposite to the first side, the insulator has an ambient temperature relative to the first side - the third side, the third side An ambient temperature higher than the second side. The heat conducting element has a flat end and a contact portion disposed between the heat sink and the heat insulator and closely attached thereto The thermal element has an aspect ratio greater than 2. The diode emits light. One of the bottoms of the component is closely attached to the flat end of the heat conducting component, and the LED light emitting device can convert an electric energy into a light. The heat conducting element can be a heat pipe ( Heatpipe) or other device with high thermal conductivity. The diode 2 optical element comprises at least one light-emitting monopole die or at least one laser diode die (Laser di〇de die). The heat-dissipating portion is fixed to the heat-dissipating portion. The heat generated by the operation of the diode-emitting light member can be conducted to the heat-dissipating body via the heat-conducting element, and the heat is dissipated. According to a preferred embodiment, the present invention The semiconductor hairpin group can apply the power headlights, and the hot body can be connected to the car body (for example, behind the bumper or integrated on the car casing, because the position of the car headlights is equal to the engine =_ device Close to the semiconductor light-emitting module, the semiconductor light-emitting module includes the entangled body=the (four) branch height is affected by the environmental temperature of the grading clock, and the insulating layer (IS〇lat〇rSleeVe)& Light-emitting elements and the ίΪίΐΐί hot ^ The step further reduces the high temperature generated by the high-heat device such as the engine, and the influence of the high-temperature heat conduction on the heat-conductive element. To enhance the heat-dissipation efficiency, a plurality of keys are formed on the second side of the heat-dissipating body. Group ^ two G in one control circuit (c〇ntr〇1 is electrically connected to the diode illuminator

,用以控制該二極體發光元件發射該光線。 X 因此,本發明之半導體發光模組利用一絕熱體隔絕高溫環境 6 200816517 在較ίίίίΐίίΐ政熱散熱效率之影響,致使該散熱體能 之散熱體係能與該汽車外殼整合設計,兼具美觀與 庄夕#並且藉由该散熱體將於該二極體發光元件運作過程中所產 含功I散ί於車體外環境溫度較低之處,以使得於汽車頭燈設置 回功率之半導體發光模組得以實現。 ^又直 式得點補神心料灯的發畴述及所附圖 【實施方式】 ♦閱圖A,圖一 Α係緣示根據本發明之一第一較佳具體 之半導體發光模組i之示意圖。圖—A中之下圖係上^沿 1、表之剖關。該半導體發光模組1包含—散熱體U、一導熱 二· 12、 一極體發光元件13、一絕熱套15以及一載台 (一amer)i6。該散熱體u具有一絕熱體14耦合在該散熱體之一第 貝1 112上,該散熱體n具有一相對於該第一側112之一第二 ^4,該絕熱體具有一相對於該第一側Π2之一第三侧ιΐ6,該 =侧116之環境溫度高於該第二側114之環境溫度。該導熱g件 有一平整端122以及一接觸部124。該接觸部124設置於該 1二體11與該絕熱體14之間並緊密貼合在該散熱體n上。該 =件12之長寬比大於2。該載台16具有該導熱元件12可穿過 =、子洞,該導熱元件12係穿過該孔洞並且該平整端122大致上與 ,載台16之一表面切齊。該二極體發光元件13之一底部緊^占 ^在該導熱元件12之平整端122以及職台16上。該二極體發 ^件13均能將-電能轉換成—光線。該導熱元件12可為一^ 導官或其他具高導熱效率之裝置。該二極體發光元件13包含至少 個發光二極體晶粒或至少一個雷射二極體晶粒。 根據該第一較佳具體實施例,該導熱元件12之接觸部係 全部陷入並以該絕熱體14直接固定在該散熱體n上。並且,該 200816517And for controlling the light emitting element to emit the light. Therefore, the semiconductor light-emitting module of the present invention utilizes a thermal insulator to isolate the high-temperature environment. The effect of the heat dissipation system of the heat-dissipating body can be integrated with the automobile casing, and the beauty and the eve are both beautiful and elegant. And by using the heat dissipating body to dissipate the work function I produced during the operation of the diode light-emitting element to a lower temperature of the external environment of the vehicle body, so as to set the semiconductor light-emitting module with the power of the headlight of the automobile Achieved. The invention is also directed to the present invention. FIG. 1 is a perspective view showing a first preferred semiconductor light emitting module i according to one of the present inventions. Schematic diagram. In the figure below, the graph below the graph is on the edge of the graph. The semiconductor light emitting module 1 includes a heat sink U, a heat conducting diode 12, a polar body light emitting element 13, a heat insulating sleeve 15, and a stage i6. The heat dissipating body u has a heat insulator 14 coupled to one of the heat sinks 1 112, the heat sink n having a second portion 4 relative to the first side 112, the heat insulator having a relative One of the first side Π2 has a third side ιΐ6, and the ambient temperature of the = side 116 is higher than the ambient temperature of the second side 114. The thermally conductive g member has a flat end 122 and a contact portion 124. The contact portion 124 is disposed between the first and second bodies 11 and the heat insulator 14 and is closely attached to the heat sink n. The ratio of the length of the member 12 is greater than two. The stage 16 has a thermally conductive element 12 that can pass through a sub-hole through which the thermally conductive element 12 passes and which is substantially aligned with a surface of the stage 16. The bottom of one of the diode light-emitting elements 13 is tightly held on the flat end 122 of the heat-conducting element 12 and on the job table 16. The diodes 13 are capable of converting - electrical energy into - light. The thermally conductive element 12 can be a guide or other device having high thermal conductivity. The diode light-emitting element 13 comprises at least two light-emitting diode crystal grains or at least one laser diode crystal grain. According to the first preferred embodiment, the contact portion of the heat conducting element 12 is completely trapped and directly fixed to the heat sink n by the heat insulator 14. And, the 200816517

I 絕熱套15包覆該二極體發光元件13與該接觸部124間之導熱 件12,以隔絕咼溫環境對該導熱元件丨2導熱效率之影塑。今浐敎 體14可隔絕高溫環境對該散熱體u散熱效率的影響。θ如圖/二及 下圖所示,此配置可使該半導體發光模組i可使用在絕熱體14 環境溫度TA高於該散熱體η之環境溫度Τβ之情形。此外, 另一較佳具體實施例,如圖一 B所示,相較該第一較佳具體實 例,一半導體發光模組1,之散熱體n,之第二侧114,上 埶 片118以增進散熱效率。 风政…、、、曰 丄另外,根據另一較佳具體實施例,如圖一 C所示,相較該 、車父佳具體實施例,一半導體發光模組丨,,之接觸部124貼合 ,亦可僅部分陷人-散熱體職體M,直翻定 政熱體η”上。此外,根據另一較佳具體實施例,如圖一 d 二 相較該第-較佳具體實施例,—半導體發光模組丨,”之敎、 =可與該散熱體η”形成-有空_空間以容納該接觸部^體 ft觸部124仍可藉由該絕熱體14”固定該接觸部124或另以一壓 =棚=一 D中)固定之。最後,根據另一較佳具體實施例, 同日Hr —半導體發光模組包含三個二極體發光元件π 4”,與一散熱體之間。相較該第-較佳且體 極體發光元件13,可封裝在—起或分開職,其雜 導熱該郎不以贿為必要,並且應盡可能增加該 遂…、η!由該接觸部124傳導至該散熱體11、n,、H,,之效 而庄忍的是,本發明並不限於適用於右側頭燈。 8 200816517 99本導體發光模組包含—散熱體2卜三個導熱元件 22、二個—極體發光元件23、—絕熱體%、—載台μ以及一支 架(Supporter)26。每一個導熱元件22具有一 ΪΪΓ 224與該散熱體21緊密貼合。該載台25具有 ί: f分別設置在該等導熱元件22之平hi體= 甘均能將—電能轉換成—光線。該等導熱元件22 二,導其他具高導熱效率之裝置。該等二極體發光元件 匕3至&gt;、-個發光二極體晶粒或至少—個雷射二極體晶粒。 根,該第二較佳具體實施例,該等導熱树a之接觸部224 作定於該散^體21。於該等二極體發光元件23運 再^^祕?可經自該料航件22料魏散熱體21 ’ 去。此外’因為汽車頭燈的位置與引擎等 ii 田絕熱體24係設置在引擎等高熱裝置與 贱隔柳擎料錄置離魏溫度 紐21散熱效率的料。因此,該絕熱體 24亦可直接纽該壓板27,同時兼具隔熱和固定的功能。 另外,該導熱元件22之接觸部故亦可以其他方式固定 ^以,似膠之材料將該接觸部故黏貼在散熱體21上,甚或焊 將為增加該接觸部224至該散熱體21的熱傳導效率,可 ^接224壓擠以形成較大的接觸面積,或是另外以具高導 ϋ ίΪΓίΐ於該接觸部224與該散熱體21接觸處附近的空隙 =曾加熱傳導截面積。於另—具體實施例中,可於—散 納數個導熱元件,或是形成—個凹槽以容 是件Γίί凹槽之形狀可配合該等導熱元件成形,或 辦二70件施加形變以配合該等凹槽形狀。此時,一絕熱 定覆蓋於該等凹槽上’即可同時兼具阻隔高溫度溫度和固 9 200816517 需注意的是’根據該第二較佳具體實施例,對於減少引 局熱裝置所產生之高溫環境對該散熱體21散熱效率的影继,可 取代該絕熱體24或額外以具絕熱效果的材質披覆在該熱體^ 以及該等導熱元件22之接觸部224。並且,可進一步使用絕&amp;套 顯示於圖中)包覆該二極體發光元件23與該接觸部224間Ί導』未 件22,或包覆露出該絕熱體24外之導熱元件22以進_步二二= 擎等高熱裝置所產生之高溫環境對該導熱元件12傳埶^率二忠 響二該絕熱套可一次包數個導熱元件22或以數個絕熱套分別勺^ 該等導熱元件22。親熱套並不以套管形式為限,轉帶形^ 繞或直接塗佈一層絕熱材質以達到絕熱或減低熱傳導的效^ 可。另外為增強散熱效率,多個鰭片212成形在該散熱體^上以' 增加散熱面積。值得一提的是,於該等較佳具體實施例中,該 絕熱體覆蓋的散熱體的區域應盡可能的大,以能有效隔絕引g 高熱裝置所產生之高溫環境對該散熱體散熱效率的影響。 、 ,、根據該第二較佳具體實施例,該載台25具有三個通孔以供兮 等導熱兀件?人,並使該等二鋪發光元件23能設置於該^ 整端222上。該等二極體發光树23之基板232 ^ 置於錄口 25上。該基板232之一表面272上形成或承載連 控制電路28之電極部。該電極連接之電線經由該支架之一孔2幻 與-控制電路28電性連接。該控制電路28經由—連接器血 車配線電性連接。該歧26係_料熱座、^銜 25 ° «^^11 體實關,該支架26係以螺絲鎖固在該燈座31上。然而 =26亦可用黏著或卡自的設計來固定在該黯Μ上, 地固定在該頭燈;3其他部位上。 赁代 另=,該等二極體發光元件23可共同使用該基板232封裝在 立=閱,一 C,圖一 C係緣示一發光二極體封裝結構4之剖 基韻裝結構4包含—基板4卜—下底座42、至少一半 導齡光晶粒43,以及—封裝材質44。該基板41 ^義-頂表面 200816517 =頁表面411之上係设有複數個外部電極(EiectricaUy C〇Ufled)46:^下底座42定義一第一表面421,該至少一半導體發 光晶粒43係藉由其底部(B〇tt〇m)431之内部電極細^㈣调定於 座42之該第一表面421。該基板41之該頂表面411係形成 部4111,該基板41上更定義一底表面412,該基板41 =該底表面412係形成-第二凹陷部4121,該第二凹陷部4i2i與 41911卩曰邛4m相連接,而該下底座42係嵌入於該第二凹陷部 第一丧面^7^ 42更定義一第二表面422,該下底座42之該 弟表面421暴蕗於該第一凹陷部4111之 之底部431係固定於該下底座42之該第-表= 部4111内部之部分。該封裝材質44,係用於填 令至^二3==1内’用以覆蓋該至少—半導體發光晶粒43。 2導體發光粒43具有内部電極,並透過線路與位於該 、表 之外部電極46導通。該至少一半導體發先曰知且 極46之連接方式係配設成串聯G態,i 明之目的連式,亦可採用並聯之鶴配接,仍可達到本發 與該G凹:d:可置於該下底座幻之該第-表面421 表面H 底部之間’以結合該下底座42之該第一 :刷=板其中-W。該下底^ ^ =U以及該第二凹陷部4⑵之=圖=第; 中基=1:h有兩個外露的電極47 ’用以連接外所不,其 ^注,*’每一個導熱元件22稀 兀件23,亦可承載數個二極 件H極體發先 熱元件22之平整端222, _九几件23准於此種情形,該導 整鈿222 *间於刚述之平整端孤,其係 11 200816517 元,22之-端壓擠以形成該幸交大的平整端222,(其示意圖 =不)。此兩種平整端形態的選擇取決於實際產品設計而_-E ,發光元件的數目和設置空間將會是很重要的考慮因素。於j &gt;’该載台25以及基板232之幾何尺寸亦需配合修改。;’月 f參賴三,圖三係繪示根據本發明之—第三較佳 例=導體發光模組應用於一汽車之一頭燈6之立體圖 ;車=具體^施例比較,該半導體發光模組之散熱體5 早 頭燈8之立體圖。與該第二和第三較佳且辦眚^ 几 該半導體發光·之錄體71汽車前側J: 外制的是’以該第四較佳具體實施例為例,該散熱體71 之外二;^、韓片712以增加散熱效率,亦得以改變該散&amp;體71 ,献向外多戦—層平行 例之上視圖),除增加散熱面二 ==體r之速度和密度以達到增加散熱效率的Utr =μ苐二較佳具體實施例,該散熱體51 非不能形成鰭片。其形成何種籍片或^片’但 何種表面處理’均應配合該汽車整1計放熱之結構或實施 因此,根據該等較佳具體實施例,本@ ,一絕熱體隔絕車體高溫度環境對體發光模組 效^效率影響’致使該散熱體能在車體外較‘的 ΐΐΤ^ί^ 述該等車If圭ί體巧光模組的應用範圍並不限於前 /、體實知條及軌車頭燈應用,只要操作環境有溫 12 200816517 ; i 散細需要時,本發明之轉體發絲_可適用。該 政”、、體的幾何尺寸則需配合實際的操作環境來設計。 能盘發明之半導體航模組之散熱體係 卜殼整合設計’兼具美觀與實用。並且藉由該散埶體 該4二極體發光元件運作過程中所產生之熱 = =光;Γ極體凡件之接點溫度,並使得於汽車^燈裝置高功率之 ΐ 體得以實現。同時,_該散鐘—部分置於高溫纖 得該散熱體仍具有良好的散體==的影響以使 同發光顏色的選擇,因此該半導冬f體有不 他照明的魏,例如整合霧燈及、==七、有指不或其 光模組中。σ職及舰於同-個半導體發 藉由以上較佳具體實施例之 發明之特徵與精神,而並非^ ^希望此更加清楚描述本 本發明之範嘴加以限制。相反地體實施例來對 及具相等性的安排於本發明所欲申請之專^範圍&amp;^各種改變 13 200816517 【圖式簡單說明】 圖一 A係給- 4 發光模組X之示曰^胃艮據本發明之一第一較佳具體 實施例之半導體 圖一 B係誇- j 光模組X,之^^^據本發明之另—較佳频實施例之半導體發 圖'一 C係給- ^ 光模組X”之示、據本發9狀另—較佳類實施例之半導體發 圖一 D你修;上, 光模組X”,之示意圖:發明之另一較佳具體實施例之半導體發 光模、i之示^圖3。不根據本發明之另一較佳具體實施例之半導财 圖二3鱗示該頭燈之一燈座之局部剖面圖。 鱗示—發光二極體封裝結構之剖面示意圖。 鱗邱—絲二極體縣結構之剖面示意圖。 平整牽較峨細辦航件之另-種 光模朗於—較佳具體實蝴之半導體發 種形r係根_四較佳具體實施例之該散熱體之鰭片之另- 14 200816517The heat insulating sleeve 15 encloses the heat conducting member 12 between the diode light emitting element 13 and the contact portion 124 to isolate the heat transfer efficiency of the heat conducting element 丨2. The present body 14 can isolate the effect of the high temperature environment on the heat dissipation efficiency of the heat sink. As shown in Fig. 2 and the following figure, this configuration allows the semiconductor light emitting module i to be used in the case where the ambient temperature TA of the thermal insulator 14 is higher than the ambient temperature Τβ of the heat dissipating body η. In addition, in another preferred embodiment, as shown in FIG. 1B, in comparison with the first preferred embodiment, a semiconductor light emitting module 1, a heat sink n, a second side 114, and a top wafer 118 are Improve heat dissipation efficiency. In addition, according to another preferred embodiment, as shown in FIG. 1C, in comparison with the specific embodiment of the vehicle, a semiconductor light-emitting module, the contact portion 124 is attached. In addition, it may be only partially trapped-heat-dissipating body M, which is directly overturned to the thermal body η. Further, according to another preferred embodiment, FIG. 1 is compared with the first-best implementation. For example, the semiconductor light emitting module 丨, 敎, = can be formed with the heat sink η" - there is a space _ space to accommodate the contact portion ft contact portion 124 can still be fixed by the heat insulator 14" The portion 124 or another is fixed in a pressure = shed = one D). Finally, according to another preferred embodiment, the same day Hr-semiconductor light-emitting module includes three diode light-emitting elements π 4" and a heat sink. Compared with the first-best and body-body light-emitting element 13, can be packaged in a separate or separate position, its miscellaneous heat conduction is not necessary to bribe, and should be increased as much as possible..., η! is conducted by the contact portion 124 to the heat sink 11, n, H, The effect is that the invention is not limited to the right headlight. 8 200816517 99 The conductor light-emitting module comprises a heat sink 2, three heat-conducting elements 22, two-pole light-emitting elements 23, The heat insulator %, the stage μ, and a supporter 26. Each of the heat conducting elements 22 has a 224 224 that closely fits the heat sink 21. The stage 25 has ί: f disposed on the heat conducting elements 22, respectively. The flat hi body = Gan can convert - electrical energy into - light. These heat conducting elements 22, lead to other devices with high thermal conductivity. The two-pole light-emitting elements 匕3 to &gt;, one light-emitting diode Body grain or at least one laser diode grain. Root, the second preferred concrete For example, the contact portion 224 of the heat conducting tree a is defined as the bulk body 21. The second light emitting element 23 is transported to the second body. Going. In addition, because the position of the headlights of the car and the engine, etc., the ii field insulation body 24 is set in the high-heating device such as the engine, and the heat-dissipating efficiency of the Weiyang temperature 21 is recorded. Therefore, the thermal insulator 24 is also The pressure plate 27 can be directly connected, and has the functions of heat insulation and fixing. In addition, the contact portion of the heat conduction element 22 can be fixed in other manners, and the glue-like material adheres the contact portion to the heat sink 21 Or even soldering, in order to increase the heat transfer efficiency of the contact portion 224 to the heat sink body 21, the contact portion 224 may be pressed to form a larger contact area, or the contact portion 224 may be additionally provided with the heat dissipation. The gap near the contact of the body 21 = the heat conduction cross-sectional area. In another embodiment, a plurality of heat-conducting elements may be dispersed or formed into a groove to accommodate the shape of the groove. The heat-conducting elements are formed, or two or 70 pieces are applied to deform The shape of the grooves is combined. At this time, an adiabatic covering on the grooves can simultaneously block the high temperature and the solid 9 200816517. It should be noted that according to the second preferred embodiment, Reducing the heat-dissipating efficiency of the heat-dissipating device by the high-temperature environment generated by the heat-receiving device can replace the heat-insulating body 24 or additionally a material having a heat-insulating effect on the heat body and the contact of the heat-conducting elements 22 The portion 224. Further, the anode/ample sleeve may be further used to cover the gap between the diode light-emitting element 23 and the contact portion 224, or the heat conduction outside the heat insulator 24 may be exposed. The component 22 transmits the heat-conducting element 12 to the high-temperature environment generated by the high-heating device such as the second step 222, and the second heat-insulating sleeve can be used to pack a plurality of heat-conducting elements 22 or a plurality of heat-insulating sleeves respectively. ^ The thermally conductive elements 22. The intimate sleeve is not limited to the sleeve type, and the ribbon is wound or directly coated with a layer of insulating material to achieve heat insulation or reduce heat transfer. In addition, in order to enhance heat dissipation efficiency, a plurality of fins 212 are formed on the heat sink body to increase the heat dissipation area. It should be noted that, in the preferred embodiments, the area of the heat sink covered by the heat insulator should be as large as possible, so as to effectively isolate the heat dissipation efficiency of the heat sink generated by the high heat device. Impact. According to the second preferred embodiment, the stage 25 has three through holes for the heat transfer element such as 兮. The person and the two-pull light-emitting elements 23 can be disposed on the terminal 222. The substrate 232 ^ of the diode illuminating tree 23 is placed on the recording port 25. An electrode portion of the control circuit 28 is formed or carried on one surface 272 of the substrate 232. The wire to which the electrode is connected is electrically connected to the control circuit 28 via a hole 2 of the holder. The control circuit 28 is electrically connected via a connector blood wiring. The bracket 26 is made of a hot seat and a 25° «^^11 body, and the bracket 26 is screwed to the socket 31. However, =26 can also be fixed on the raft with an adhesive or card design, and the ground is fixed on the headlight; 3 other parts. In addition, the diode light-emitting elements 23 can be used together with the substrate 232 to be packaged in a vertical, a C, and a C-based edge of a light-emitting diode package structure 4 - Substrate 4 - lower base 42, at least half of the lead-length optical die 43, and - package material 44. The substrate 41 is defined as a plurality of external electrodes (EiectricaUy C〇Ufled) 46. The lower base 42 defines a first surface 421, and the at least one semiconductor light emitting crystal 43 is defined. The first surface 421 of the seat 42 is set by the internal electrode of the bottom portion (4). The top surface 411 of the substrate 41 is formed by a portion 4111. The substrate 41 further defines a bottom surface 412. The substrate 41 = the bottom surface 412 is formed by a second recess 4121, and the second recesses 4i2i and 41911曰邛4m is connected, and the lower base 42 is embedded in the second recessed portion. The first surface of the second surface is further defined by a second surface 422. The second surface 421 of the lower base 42 is violent to the first surface. The bottom portion 431 of the recessed portion 4111 is fixed to a portion of the lower portion 42 of the first table portion 4111. The package material 44 is used to fill the surface of the semiconductor light-emitting die 43 to cover the semiconductor light-emitting die 43. The two-conductor luminescent particles 43 have internal electrodes and are electrically connected to the external electrodes 46 located on the surface. The at least one semiconductor is first known and the connection mode of the pole 46 is configured to be in a series G state, and the purpose of the connection is the same, or a parallel crane can be used, and the present and the G concave can still be achieved: d: Placed between the bottom of the base-surface 421 surface H of the lower base phantom to join the first base of the lower base 42: brush = plate -W. The lower bottom ^ ^ = U and the second depressed portion 4 (2) = map = the first; the middle base = 1: h has two exposed electrodes 47 ' for connecting the outside, its ^, * 'each heat conduction The thin element 23 of the component 22 can also carry the flat end 222 of the plurality of diodes H the first heat generating element 22, and the _9 parts 23 are in this case, and the guiding 钿 222 * is just described The flat end is solitary, the system is 11 200816517 yuan, and the end of 22 is pressed to form the flat end 222 of the fortunate large (the schematic diagram = no). The choice of the two flat end forms depends on the actual product design and _-E, the number of light elements and the setup space will be important considerations. The geometry of the stage 25 and the substrate 232 is also modified. </ br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br><br> The heat sink of the module 5 is a perspective view of the early headlight 8. With the second and third preferred embodiments of the semiconductor light-emitting body 71, the front side of the automobile J: is externally made, taking the fourth preferred embodiment as an example, the heat radiating body 71 is two ; ^, Korean film 712 to increase the heat dissipation efficiency, can also change the dispersion &amp; body 71, to the outward more than the layer - parallel view above the view), in addition to increasing the heat dissipation surface 2 = = body r speed and density to achieve Utr = μ 增加 which increases the heat dissipation efficiency. In the preferred embodiment, the heat sink 51 is not capable of forming fins. What kind of film or film is formed, but what kind of surface treatment should be combined with the structure or implementation of the heat release of the automobile. Therefore, according to the preferred embodiments, the @, a thermal insulation body is high. The influence of the temperature environment on the efficiency of the body light-emitting module is such that the heat-dissipating body can be compared to the outside of the vehicle. The application range of the vehicle is not limited to the front/body. Known and rail car headlight applications, as long as the operating environment has a temperature of 12 200816517; i when the need for fine, the swivel hair of the present invention _ is applicable. The geometry of the body and the body must be designed in accordance with the actual operating environment. The heat sink system of the semiconductor navigation module that can be invented by the disk can be both aesthetically and practically designed, and the bulk body is The heat generated during the operation of the diode light-emitting element = = light; the contact temperature of the body of the body of the body, and the high-powered body of the lamp device is realized. Meanwhile, the clock is partially placed At the high temperature fiber, the heat sink still has a good influence of the bulk == to make the selection of the same illuminating color, so the semi-conducting winter body has a Wei that does not illuminate him, for example, an integrated fog lamp and, == seven, with reference The features and spirit of the invention of the above preferred embodiments are not limited in the light module of the present invention, and it is not intended to limit the scope of the invention. In contrast, the embodiment of the present invention is equivalent to the scope of the invention and the various modifications of the invention. 13 200816517 [Simple description of the drawing] Figure 1A shows the display of the illumination module X. ^ stomach sputum according to one of the first preferred embodiments of the present invention The semiconductor diagram of the embodiment is a diagram of the semiconductor module of the preferred embodiment of the present invention. According to the present invention, a semiconductor device of the preferred embodiment is shown in FIG. 1A, and a schematic diagram of a semiconductor light-emitting module according to another preferred embodiment of the invention. Figure 3 is a partial cross-sectional view showing a lamp holder of a headlight according to another preferred embodiment of the present invention. The scale shows a schematic cross-sectional view of the LED package structure. Schematic diagram of the structure of the Qiu-Si Dixian County structure. The other type of optical pattern that is better than the fine-grained navigation parts is better than the preferred embodiment of the semiconductor-type r-roots. The fin of the heat sink is another - 14 200816517

4 J 【主要元件符號說明】 1、1’、1”、1”,:半導體發光模組 3、6、8 :頭燈 4:封裝結構 11、11’、11” :散熱體 12 ··導熱元件 13 :二極體發光元件 14、14’、14” :絕熱體 15 :絕熱套 16 :載台 21 :散熱體 22 :導熱元件 23 :二極體發光元件 24 :絕熱體 25 :載台 26 ··支架 27 :壓板 28 :控制電路 31 :燈座 41、41’ :基板 42 :下底座 43、43’ :半導體發光晶粒 44 :封裝材質 45 :導熱膠體 46 :外部電極 47 :外露電極 51、71 :散熱體 112 :第一侧 114、114’ ··第二側 116 ··第三侧 118 :鰭片 122 :平整端 124 :接觸部 212 :鰭片 222、222’ :平整端 232 :基板 224 :接觸部 262 :孔 272 :表面 411 :頂表面 412 :底表面 421 ··第一表面 15 200816517 • * 422 :第二表面 712、714 :鳍片 4121 :第二凹陷部 A :夾角 431 ·晶粒底部 4111 :第一凹陷部 TA、TB :環境溫度 F :流體 164 J [Description of main component symbols] 1, 1', 1", 1", semiconductor light-emitting modules 3, 6, 8: headlights 4: package structure 11, 11', 11": heat sink 12 · · heat conduction Element 13: Diode light-emitting element 14, 14', 14": Insulation body 15: Insulation sleeve 16: Stage 21: Heat sink 22: Heat-conducting element 23: Diode light-emitting element 24: Insulation body 25: Stage 26 · Bracket 27: Platen 28: Control circuit 31: Lamp holder 41, 41': Substrate 42: Lower base 43, 43': Semiconductor light-emitting die 44: Package material 45: Thermal paste 46: External electrode 47: Exposed electrode 51 71: the heat sink 112: the first side 114, 114' · the second side 116 · the third side 118: the fin 122: the flat end 124: the contact portion 212: the fins 222, 222': the flat end 232: Substrate 224: contact portion 262: hole 272: surface 411: top surface 412: bottom surface 421 · first surface 15 200816517 • * 422: second surface 712, 714: fin 4121: second recess A: angle 431 · Grain bottom 4111: first recess TA, TB: ambient temperature F: fluid 16

Claims (1)

200816517 樣 · 十、申請專利範圍: 1、 一種半導體發光模組(Semiconductor light-emitting module),包含: 一散熱體(Heat-dissipating member)具有一絕熱體(Isolator member)耦合在該散熱體之一第一側上,該散熱體具有一相 對於該第一側之一第二侧,該絕熱體具有一相對於該第一侧 之一第三侧,其中該第三側之環境溫度高於該第二側之環境 溫度; 一長條形導熱元件(Heat-conducting device),該導熱元件具有一 平整端(Flat end)以及一接觸部(Contact portion),該接觸部設 置於該散熱體與該絕熱體之間並緊密貼合在該散熱體上; 一二極體發光元件(Diode light-emitting device)之一底部緊密貼 合在該導熱元件之平整端上;以及 2、 如申請專利範圍第1項所述之半導體發光模組,其中該導熱元件 之長寬比大於2。 3、 如申請專利範圍第1項所述之半導體發光模組,其中該導熱元件 為一熱導管(Heatpipe)。 4、 如申請專利範圍第1項所述之半導體發光模組,進一步包含一絕 熱套(Isolator sleeve)包覆該二極體發光元件與該接觸部間之暮孰 元件。 ” 5、 如申請專利範圍第1項所述之半導體發光模組,其中多個鰭片(Fin 成形在該散熱體之第二侧上。 6、 如申請專利範圍第1項所述之半導體發光模組,進一步包含一控 制電路(Co咖1 circuit)電性連接至該二極體發光元件,用以控1 該一極體發光元件發射一光線。 人^申請專利範圍幻項所述之半導體發光模組,其中該二極體 二元件包含至少-發光一極體晶粒(Light_emitting &gt;'一雷射二極體晶粒(Laser diode die)。 8、所述之半導體發光模組’其中該二極體發 17 200816517 i % 一基板(substrate),該基板上定義一 之該頂表面上係形成一第4陷=7絲面,該基板 形成-第二凹陷部,且料ϋ趙板之該絲面上係 接,該頂表面之上係設連 -下;^座(Sub-mount)係與該第 U = 广二)二 義一第一表面和—第 =^卩相接合’钉底座上定 陷部之内部弟表面之一部分暴露於該第一凹 9、 ί=)第體發光晶粒藉由該底:^^Ττ 一^之&quot;#絲暴祕該第—凹陷㈣部之部分.以;5 一質(滅哪η,’ _材質係用於填充哕第-l由以覆蓋該至少—半導體發光晶粒。 ^專利犯圍第8項所述之半導體發光模組, 1〇、導想發先模組,其中該下底座係 18200816517 Sample · X. Patent application scope: 1. A semiconductor light-emitting module, comprising: a heat-dissipating member having an Isolator member coupled to one of the heat sinks On the first side, the heat sink has a second side opposite to the first side, the insulator has a third side opposite to the first side, wherein the third side has an ambient temperature higher than the The ambient temperature of the second side; a heat-conducting device having a flat end and a contact portion, the contact portion being disposed on the heat sink and the contact portion The heat insulators are closely attached to the heat sink; one of the diode light-emitting devices is closely attached to the flat end of the heat conducting component; and 2, as claimed in the patent application The semiconductor light emitting module of claim 1, wherein the thermally conductive element has an aspect ratio greater than two. 3. The semiconductor light emitting module of claim 1, wherein the heat conducting component is a heat pipe. 4. The semiconductor light emitting module of claim 1, further comprising an Isolator sleeve covering the germanium element between the diode light emitting element and the contact portion. 5. The semiconductor light emitting module of claim 1, wherein a plurality of fins (Fin are formed on the second side of the heat sink. 6. The semiconductor light emitting according to claim 1 The module further includes a control circuit (Co circuit) electrically connected to the diode light-emitting element for controlling the light emitted by the one-pole light-emitting element. The light emitting module, wherein the two diode elements comprise at least a light emitting diode (Light_emitting &gt; 'a laser diode die. 8. The semiconductor light emitting module The diode is 17 200816517 i % a substrate, the substrate is defined on the top surface to form a fourth depression = 7 silk surface, the substrate forms a second depressed portion, and the material is The surface of the wire is fastened, and the top surface is connected with a lower-bottom; the sub-mount is joined to the first surface of the U-shaped second and the second surface and the first One of the inner surface of the trap on the base is partially exposed to the first recess 9, ί=) The illuminating crystal grain is made up of the bottom: ^^Ττ一^&#;#丝暴秘The first part of the sag (four) part; to a quality (extinguish η, ' _ material is used to fill the 哕-l The semiconductor light-emitting module of the eighth aspect of the invention is covered by the semiconductor light-emitting module, and the first base system is 18
TW95136460A 2006-09-29 2006-09-29 Semiconductor high-power light-emitting module with heat isolation TWI328292B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10591124B2 (en) 2012-08-30 2020-03-17 Sabic Global Technologies B.V. Heat dissipating system for a light, headlamp assembly comprising the same, and method of dissipating heat

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10591124B2 (en) 2012-08-30 2020-03-17 Sabic Global Technologies B.V. Heat dissipating system for a light, headlamp assembly comprising the same, and method of dissipating heat

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