200820460 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體光源裝置，且特別是有關於一種利用導熱 基板的側賴平φ，來雜半導體⑼，使兼具聚光及散_半導體光源 . 裝置。 【先前技術】 1知大多使用如白熾燈、鹵素燈或日光燈等各種不同之燈泡，以作為 光源裝置之發光源。近來，由於發光二極體aight Emining Di〇de，簡稱 LED)等半‘體晶片財體積小、省電與壽命長等優點，乃逐漸取代而成為 極受歡迎之發光源。 對於光源裝置之結構而言，多晶片、高功率之發光二極體封裝，已成 為不可避免之趨勢要求。例如，名稱為” GQneentHeally Leaded200820460 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light source device, and more particularly to a side-lying flat φ using a thermally conductive substrate, and a semiconductor (9), which combines concentrating and scattering _Semiconductor light source. Device. [Prior Art] It is known that many different bulbs such as incandescent lamps, halogen lamps or fluorescent lamps are used as the light source of the light source device. Recently, due to the advantages of small size, power saving and long life of the semi-body wafers such as the LED aight Emining Di〇de (LED), it has gradually replaced and become a very popular light source. For the structure of the light source device, multi-wafer, high-power LED package has become an inevitable trend. For example, the name is "GQneentHeally Leaded
Semiconductor Device package” 之美國第 6, 492,725 號專利，即提出一 種共中心之封裝結構，以利於封裝多個高功率晶片之結構的散熱。此種封 裝結構，雖可解決封裝多個高功率晶片之散熱問題，但因為在封裝結構體 之周邊，僅有—面可朗半導體晶片，使得半導體晶片的封裝數量受到限 制，且當半導體晶片為發光二極體時，也因為封裝結構體之周邊分佈的半 導體晶片不能集中，使其不易滿足顧在半導體光職置時之聚光要求。 【發明内容】 有鑑於此，本發明之目的是提供一種半導體光源裝置，其利用導 熱基板的側邊與平面’來貼附半導體晶片，使其可兼具散熱與光源裝置的 聚光需求。 200820460 為達上述及其他目的，本發明提供一種半導體光源裝置包括：導 熱基板及第-半導體晶片。其中，導熱基板至少具有第一面、第二面及側 邊，其側邊上並具有多個焊塾。第一半導體晶片係貼附於導熱基板之側邊 上，並電性連接至側邊之焊墊。 、在-實施射’此半導體絲裝置更包括—聚光杯，肋裝置前述之 導熱基板，聚脉具有-出如，以將第—半導體；所產生之光，匯聚 往出光口的方向。 人 在貝知例中V熱基板之第-面或第二面上也具有多個焊墊，而半 導體光源裝置更包括多_二半導體晶片，分繼附於導熱基板之第— 面、第二=或側邊上，並電性連接至第一面、第二面或側邊上之谭塾。 在-貫施例中，此半導體光源裝置更包括：外導體、内導體“邑緣 層與多個第三半導體晶片。其中，外導體係配置於聚光杯中，並具有外表 面、第一端、第二端與連通第一端及第二端之通孔。内導體係設置於通 孔，並犬出於第一鳊之外。絕緣層設置於内導體與外導體之間， 而多個第三半導體晶片則貼附於外導體第一端之外表面上，並以串連、並 連或串並連組合方式連接至内導體與外導體，使第三半導體晶片所產生 之光’經由?《光杯之匯聚，而往出光口方向傳送。 為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂， 下文特以較佳實施例，並配合所_式，作詳細說明如下： 【實施方式】 圖1-2顯示根據本發明第一實施例之一種半導體光源裝置1〇，此半導 體光源裝置10包括例如是銘基板或扁平狀熱管之導熱基板u、例如是發光 二極體晶片之半導體⑼12、13、14及聚光杯15。 200820460 乂# 杯15具有出光口16,出光口 16之週緣綱設有兩溝槽i5i， M2餘n可崎犧⑸鳴妓输π _，並由聚光杯 ㈣半㈤以12,、_生之光，轉往料⑽的方向。 ㈣所示，導熱基板u具有用以選擇性地貼附半導編i2、i3、14 ’、 11第一面112等平面舆側邊118，第-面m、第二面112與 1邊上〃別具有作為電路佈線之多個焊塾113。因為半導體晶片12、 為倒細（Fllp Chip)，故可分概附並條連接至導熱基板 第面111第—面112與侧邊H8的焊墊113上，而使用焊墊113 的電路佈線’來作為半導體晶片12、13與14的供電電極。 此外’為了提高铸體晶片12、13舆14的導錄触果，或當使用 之導熱基板11不適於貼附半導體晶片12、13與14時，導熱基板u上用 以貼附半導體晶片12、13與14的位置，並喪合有可提升導熱效率或利於 貼附半導體晶片12、13與14之-嵌合塊115。喪合塊115之材質例如為銅， 嵌合方式則可以使用緊密配合之方式來製作。 前述實施例中，雖然在導熱基板U之第—面⑴、第二面112與侧邊 118上’分別僅貼附有倒裝之半導體晶片12、13或14。然熟習此藝者應知， 可在導熱基板11之第-面1U、第二面112或側邊118上，分別貼附更多 之半導體晶片12、13或14，以增加此半導體光源裝置1〇之發光強度。所 貼附之半導體晶片12、13或14也可以是-般晶片’再以導線分別連接至 第一面111、第二面112或側邊118的焊墊113上，其貼附位置較佳地應位 於聚光杯15之焦點上或鄰近焦點處。 當第一面111、第二面112或側邊118上分別貼附有多個半導體晶片 12、13或14時，也可以搭配第一面111、第二面n2减側邊118上之不同 佈線設計，以及控制此半導體光源裝置10之電路，來達成在不同場合應用 200820460 此半導體光源裝置10之目的。例如，將此半導體統裝置1()細在汽車 頭燈時，T以將作為遠光燈主光源之半導體晶片12、13幻4，貼附在導熱 基板11對應?长光杯15之焦點位1，且將作為近光燈光源之半導體晶片u 或13，貼附在導熱基板11對應聚光杯15之焦點前方，並應用導熱基板η 之佈線’分別連接至半導體光源裝i i㈣不同控制電路上，以分別控制近 光燈或遠光燈光源的點亮與否。 另外，如將此半導體光源裝置10應用在舞台燈光時，除了可以將半導 體晶片12、13或14，貼附在導熱基板n對應聚光杯15之焦點位置外，也 可以將半導體晶片12、13或14，貼附在導熱基板n對應聚光杯15之焦點 四周，並應用導熱基板11之佈線，將焦點上或焦點四周之半導體晶片12、 13或14，分別連接至半導體光源裝置1〇的不同控制電路上，以分別控制 半導體晶片12、13或14的點亮與否，達成動態控制舞台燈紅目的。其 中，貼附於焦點左側之半導體晶片12、13或14所產生的光，將會偏向右 方投射，而貼附於焦點右側之半導體晶片12、13或14所產生的光，則會 偏向左方投射，故可以搭配半導體光源裝置10的控制電路，來動態控制舞 台燈光。 圖3-7顯示根據本發明第二實施例之一種半導體光源裝置3〇，此半導 體光源裝置30除『具有與圖2類似之導熱基板31、貼附於側邊418之半導 體晶片34及聚光杯35外，更包括由外導體41、内導體42、絕緣層43 與多個半導體晶片44所構成之主光源40，以及可將主光源4〇鎖固於聚光 杯35之螺帽51。其中，導熱基板31下方之v形缺口 311，正好可供主光 源40推進至接近半導體晶片34之位置。 如圖所示，外導體41較佳地為長條形圓柱狀，其具有第一端411、第 二端412、連通第一端411舆第二端412之通孔413及一外表面414。第一 200820460 端411係製作成錐狀，錐狀外表面414之周圍則具有圍繞外導體41且平均 分佈之平面4141、4142、4143與4144，用以貼附例如是發光二極體之半導 體晶片44。第二端412則可以設置多個螺紋415，用以配合設置於聚光杯 35上的螺紋，來調整主光源4〇在聚光杯35中之位置。 内導體42較佳地為外徑略小於外導體41之通孔413的長條形圓柱 狀，以便可以穿設於通孔413中，並延伸其一端至突出於外導體41 的第-端411外。圖巾，内導體42突出外導體&之部分並具有一錐 狀末端421，錐狀末端421較佳地也具有分別與平面4141、4142、4143與 4144相對應之平面42H、4212、4213舆4214，以利於使用導線45將半導 體晶片44分別連接至内導體42與外導體41。 絕緣層43係設置於内導體42與外導體41之間，以隔離内導 體42與外導體41的電性連接，使内導體42與外導體41成為此 主光源40之電極。 前述第二實施例的主光源40，除了可以是如圖3_τ所示之結構外，孰 習轉者亦可依據其精神而進行各種不同之變化。例如，圖㈣即顯_ 種類似於圖3-7之主光源40的不同結構，分別說明如下。 請參考® 8所示，主光源70的内導體72與外導體71結構均鱼 圖3-7相同，所不同的只有半導體晶片％的連接方式。在圖^中， 每個半導體晶片44均係以導線45分财接至内導體42舆外導體41， 使半導體晶#44成為並連連接，關8巾，半導體w ?4係轉線π先 行串連連接後，再連接朗導體72與外倾71。當然，此種串連、 =連或甚至串並雜合的連接方式，射由使用者依據供電電壓與半導體 曰曰片74的額定電壓之不同，而加以變化選擇的。 圖9之主光源80的内導體82與外導體81結構亦大致與圖w 200820460 相同’所不同的是外導體81與内導體82上所設置用以貼附半導體 晶片84的平面數，以及所貼附之半導體晶片84的數目。如圖9所示，錐 狀外表面之周圍具有圍繞外導體81且平均分佈之三個平面8141、8142與 8143，每個平面8141、8142與8143上，各貼附有三個例如是發光二極體 之半導體晶片84，半導體晶片84並以導線85先行串連連接後，再連接至 内82舆外導體81 ’以形成串並連交互組合之連接方式。 圖10之主光源90的内導體92與外導體91結構同樣也大致與 圖3-7相同，不同的是外導體91與内導體92上所設置用以貼附 半‘體晶片94的平面數，以及所貼附之半導體晶片94的型式。如圖1〇 所不，錐狀外表面之周圍具有圍繞外導體91且平均分佈之五個平面9141、 9142、9143、9144 與 9145，每個平面 9141、9142、9143、9144 與 9145 上， 係貼附有倒裝晶片（Flip Chip)之半導體晶片94。由於半導體晶片⑽係貼 附並直接電性連接至外導體91與内導體92，因此，圖中之半導體晶片 94，並未再以導線分別連接至内導體02與外導體91。 圖11-12顯示根據本發明第三實施例之一種半導體光源裝置6〇，此半 ^體光源裝置60包括例如是麟板或解狀熱f之導絲板6卜例如是發 光一極體曰曰片之半導體晶片62、聚光杯邸及陣列透鏡的。 其中，聚无杯65具有出光口 66，出光口 66之週緣並開設有平均分佈 之四個溝槽65卜以便呈十字形之導熱基板61可以沿著四個溝槽651而裝 置於來光杯65中，並由聚光杯65將半導體晶片62所產生之光，匯聚往出 光口 66的方向。 如圖所不’ ν熱基板61具有用以選擇性地貼附半導禮晶片#多個平面 611與側邊618，侧邊618上並具有作為電路佈線之焊墊613，以便貼附半 導體晶片62。因為半導體晶片62係為倒裝晶·& _，故可直接貼 10 200820460 附並電性連接至導熱基板61之側邊618的烊墊613上，而使用浑墊613的 電路佈線，來作為半導體晶片62的供電電極。 此外，為了使半導體光源裝置60所產生之光可以更為均勻地分佈，聚 光杯65的出光口 66上也設置有一陣列透鏡69。圖中，陣列透鏡69的結構 係由陣列排列之凹透鏡所構成，以將聚光杯65匯聚往出光口 66方向之光， 進一步折射而更為均勻地分佈於出光口 66的方向。當然，如熟習此藝者所 知，陣列透鏡69的結構也可以由陣列排列之凸透鏡而構成，隨可以達成 分散半導體光源裝置60所產生之光，使更為均勻地分佈於出光口邸之目 的0 由前述說明中可知，因為半導體光源裝置1Q或⑼係將半導體晶片η、 13、或62，_在例如是織域扁平狀鮮之導熱基板1丨或μ上， =疑:可提供足狀_面雜散編積。特導體光職置洲之 42 _•前述可在較小的體積内封裝較多的半導體 曰曰片達成較佳的聚光效果。此外，由於半導# 除了可以作為供電電極外，也可以藉由與外加縣^置二之^體入 較佳的散熱功效。+^片所產生的熱能得以快速發散，達成 雖然本發明已讀佳實施例揭露如上，然 發明，任何熟習此技藝者，在不脫離本發明仏限定本 之各種更動與潤飾，亦屬本發明之範 大1神和耗圍内所作 圍當視後附之巾請專利範15所界定者為準因此’本發明之保護範 200820460 【圖式簡單說明】 圖1係顯示根據本發明第一實施例之一種半導體光源裝置立體圖。 圖2係顯示圖1之分解立體圖。 圖3係顯示根據本發明第二實施例之一種半導體光源裝置立體圖。 圖4係顯示圖3之分解立體圖。 圖5係顯示圖4之主光源放大立體圖。 圖6係顯示圖4之主光源剖面圖。 圖7係顯不圖4之主光源俯視圖。 圖8係顯示圖4之主光源的另一連接方式俯視圖。 圖9係顯示圖4之主光源的一種結構變化俯視圖。 圖10係顯示圖4之主光源的另一種結構變化俯視圖。 圖11係顯示根據本發明第三實施例之一種半導體光源裝置立體圖。 圖12係顯示圖11之分解立體圖。 【主要元件符號說明】 10、 30、60半導體光源裝置 11、 3卜61導熱基板 111第一面 112第二面 113、613 焊墊 115喪合塊 118、418、618 側邊 12、 13、14、34、62半導體晶片 15、35、65聚光杯 12 200820460 151、651 溝槽 16、66出光口 311 V形缺口 40、 70、80、90 主光源 51螺帽 41、 71、81、91 外導體 411第一端 412第二端 413通孔 414外表面 4141、4142、4143、4144、4211、4212、4213、4214 平面 415螺紋 42、 72、82、92 内導體 421錐狀末端〃 43絕緣層 44、 74、84、94半導體晶片 45、 75、85 導線 69陣列透鏡 611平面 8141、8142、8143、9141、9142、9143、9144、9145 平面 13US Patent No. 6,492,725 to Semiconductor Device Package, which proposes a concentric packaging structure to facilitate heat dissipation of a package of a plurality of high power wafers. The package structure can solve the problem of packaging a plurality of high power chips. The problem of heat dissipation, but because there is only a surface-emitting semiconductor wafer around the package structure, the number of packages of the semiconductor wafer is limited, and when the semiconductor wafer is a light-emitting diode, it is also distributed because of the periphery of the package structure. The semiconductor wafer cannot be concentrated, making it difficult to meet the concentrating requirements of the semiconductor optical device. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a semiconductor light source device that utilizes the side and plane of a thermally conductive substrate. In order to achieve the above and other objects, the present invention provides a semiconductor light source device comprising: a thermally conductive substrate and a first semiconductor wafer, wherein the thermally conductive substrate is at least affixed to the semiconductor wafer. Having a first side, a second side and a side edge, and having a plurality of welds on the sides thereof The first semiconductor wafer is attached to the side of the thermally conductive substrate and electrically connected to the side pads. The semiconductor device further includes a collecting cup, and the rib device is thermally conductive as described above. The substrate, the poly vein has a discharge, for example, to concentrate the light generated in the direction of the light exit port. The human body also has a plurality of welds on the first side or the second side of the V thermal substrate. a pad, and the semiconductor light source device further comprises a plurality of semiconductor wafers, which are sequentially attached to the first surface, the second surface or the side of the heat conductive substrate, and electrically connected to the first surface, the second surface or the side edges In the embodiment, the semiconductor light source device further comprises: an outer conductor, an inner conductor "a germanium edge layer and a plurality of third semiconductor wafers. The outer guiding system is disposed in the concentrating cup and has an outer surface, a first end, a second end, and a through hole connecting the first end and the second end. The internal guiding system is placed in the through hole and the dog is outside the first opening. The insulating layer is disposed between the inner conductor and the outer conductor, and the plurality of third semiconductor wafers are attached to the outer surface of the first end of the outer conductor, and are connected to the inner conductor in a series, parallel or serial combination And the outer conductor, the light generated by the third semiconductor wafer is transmitted through the "light cup" and transmitted to the light exit port. The above and other objects, features, and advantages of the present invention will become more apparent and understood. A semiconductor light source device 1 according to a first embodiment of the invention, the semiconductor light source device 10 comprising a thermally conductive substrate u such as a substrate or a flat heat pipe, a semiconductor (9) 12, 13, 14 and a collecting cup such as a light emitting diode chip 15. 200820460 乂# Cup 15 has a light exit 16 and the periphery of the light exit 16 is provided with two grooves i5i, M2 remaining n can be sacrificed (5) 妓 妓 π _, and by the collecting cup (four) half (five) to 12, _ raw Light, turn to the direction of the material (10). (4) The heat-conductive substrate u has a planar side edge 118 for selectively attaching the semi-guided braids i2, i3, 14', 11 and the first surface 112, the first-surface m, the second surface 112 and the 1-side The screening has a plurality of pads 113 as circuit wiring. Since the semiconductor wafer 12 is a Fllp Chip, it can be connected to the pad 113 of the first surface 112 and the side H8 of the heat-transfer substrate 111, and the circuit wiring of the pad 113 is used. The power supply electrodes are used as the semiconductor wafers 12, 13, and 14. In addition, in order to improve the navigational touch of the cast wafers 12, 13舆14, or when the thermally conductive substrate 11 used is not suitable for attaching the semiconductor wafers 12, 13 and 14, the thermally conductive substrate u is used to attach the semiconductor wafer 12, The positions of 13 and 14 are combined with a fitting block 115 which can improve the thermal conductivity or facilitate the attachment of the semiconductor wafers 12, 13 and 14. The material of the funnel block 115 is, for example, copper, and the fitting method can be produced by using a close fit. In the foregoing embodiment, only the flip-chip semiconductor wafers 12, 13 or 14 are attached to the first surface (1), the second surface 112, and the side edges 118 of the thermally conductive substrate U, respectively. As will be appreciated by those skilled in the art, more semiconductor wafers 12, 13 or 14 may be attached to the first side 1U, the second side 112 or the side 118 of the thermally conductive substrate 11, respectively, to increase the semiconductor light source device 1. The luminous intensity of 〇. The attached semiconductor wafer 12, 13 or 14 may also be a general-wafer' and then connected to the pads 113 of the first side 111, the second side 112 or the side 118 by wires, preferably at a bonding position. It should be at or near the focus of the concentrating cup 15. When a plurality of semiconductor wafers 12, 13 or 14 are respectively attached to the first surface 111, the second surface 112 or the side surface 118, the different wirings on the first side 111 and the second side n2 minus the side edges 118 may be used. The circuit of the semiconductor light source device 10 is designed and controlled to achieve the purpose of applying the 200820460 semiconductor light source device 10 in different occasions. For example, when the semiconductor device 1 () is thinner than the headlight of the automobile, T is attached to the semiconductor wafer 12, 13 which is the main source of the high beam, and is attached to the focus of the heat-conducting substrate 11 corresponding to the long-light cup 15. 1. The semiconductor wafer u or 13 as a low beam light source is attached to the front side of the heat-conducting substrate 11 corresponding to the focus cup 15, and the wiring of the heat-conducting substrate η is respectively connected to the semiconductor light source device i (four) different control circuits Upper to control whether the low beam or high beam source is lit or not. In addition, when the semiconductor light source device 10 is applied to a stage light, the semiconductor wafer 12, 13 or 14 can be attached to the focus position of the heat-conducting substrate n corresponding to the collecting cup 15, and the semiconductor wafers 12 and 13 can also be used. Or 14, attached to the heat-conducting substrate n corresponding to the focus of the collecting cup 15, and applying the wiring of the heat-conducting substrate 11 to connect the semiconductor wafer 12, 13 or 14 at the focus or the focus to the semiconductor light source device 1 Different control circuits are used to control the lighting of the semiconductor wafers 12, 13, or 14, respectively, to achieve dynamic control of the stage lights. Wherein, the light generated by the semiconductor wafer 12, 13 or 14 attached to the left side of the focus will be projected to the right, and the light generated by the semiconductor wafer 12, 13 or 14 attached to the right side of the focus will be biased to the left. The square projection can be used to dynamically control the stage lighting with the control circuit of the semiconductor light source device 10. 3-7 shows a semiconductor light source device 3 according to a second embodiment of the present invention. The semiconductor light source device 30 has a thermally conductive substrate 31 similar to that of FIG. 2, a semiconductor wafer 34 attached to the side 418, and a concentrating light. The cup 35 further includes a main light source 40 composed of an outer conductor 41, an inner conductor 42, an insulating layer 43, and a plurality of semiconductor wafers 44, and a nut 51 that can lock the main light source 4'' to the concentrating cup 35. The v-shaped notch 311 under the heat-conducting substrate 31 is just for the main light source 40 to be advanced to a position close to the semiconductor wafer 34. As shown, the outer conductor 41 is preferably an elongated cylindrical shape having a first end 411, a second end 412, a through hole 413 that communicates with the first end 411, the second end 412, and an outer surface 414. The first 200820460 end 411 is formed in a tapered shape, and the periphery of the tapered outer surface 414 has a plane 4141, 4142, 4143 and 4144 which are evenly distributed around the outer conductor 41 for attaching a semiconductor wafer such as a light emitting diode. 44. The second end 412 can be provided with a plurality of threads 415 for matching the threads disposed on the collecting cup 35 to adjust the position of the main light source 4 in the collecting cup 35. The inner conductor 42 is preferably an elongated cylindrical shape having an outer diameter slightly smaller than the through hole 413 of the outer conductor 41 so as to be able to pass through the through hole 413 and extend one end thereof to protrude from the first end 411 of the outer conductor 41. outer. In the figure, the inner conductor 42 protrudes from the outer conductor & and has a tapered end 421. The tapered end 421 preferably also has planes 42H, 4212, 4213 corresponding to the planes 4141, 4142, 4143 and 4144, respectively. 4214, to facilitate the use of wires 45 to connect semiconductor wafers 44 to inner conductors 42 and outer conductors 41, respectively. The insulating layer 43 is disposed between the inner conductor 42 and the outer conductor 41 to isolate the inner conductor 42 from the outer conductor 41 so that the inner conductor 42 and the outer conductor 41 become the electrodes of the main light source 40. The main light source 40 of the foregoing second embodiment can be variously changed according to its spirit, in addition to the structure shown in Fig. 3_τ. For example, Figure (4) shows a different structure similar to that of the main light source 40 of Figures 3-7, respectively, as follows. Referring to Figure 8, the inner conductor 72 and the outer conductor 71 of the main light source 70 are the same as those of the outer conductor 71, except that the semiconductor wafer is connected in a %. In the figure, each of the semiconductor wafers 44 is connected to the inner conductor 42 and the outer conductor 41 by wires 45, so that the semiconductor crystals #44 are connected in parallel, and the semiconductors are turned on, and the semiconductors are switched. After the series connection, the long conductor 72 and the camber 71 are connected. Of course, such a series, = or even a series of hybrid connections are selected by the user depending on the difference between the supply voltage and the rated voltage of the semiconductor chip 74. The structure of the inner conductor 82 and the outer conductor 81 of the main light source 80 of FIG. 9 is also substantially the same as that of FIG. 200820460. The difference is the number of planes on the outer conductor 81 and the inner conductor 82 for attaching the semiconductor wafer 84, and The number of attached semiconductor wafers 84. As shown in FIG. 9, the periphery of the tapered outer surface has three planes 8141, 8142, and 8143 which are evenly distributed around the outer conductor 81. Each of the planes 8141, 8142, and 8143 is attached with three, for example, light-emitting diodes. The semiconductor wafer 84, the semiconductor wafer 84 is connected in series by the wires 85, and then connected to the inner 82's outer conductor 81' to form a serial and parallel connection. The inner conductor 92 of the main light source 90 of Fig. 10 is also substantially the same as the outer conductor 91 in the same manner as in Figs. 3-7, except that the number of planes on the outer conductor 91 and the inner conductor 92 for attaching the semi-body wafer 94 is the same. And the type of semiconductor wafer 94 to which it is attached. As shown in FIG. 1 , the tapered outer surface has five planes 9141, 9142, 9143, 9144 and 9145 which are evenly distributed around the outer conductor 91, and each plane 9141, 9142, 9143, 9144 and 9145 A semiconductor wafer 94 to which a flip chip is attached is attached. Since the semiconductor wafer (10) is attached and directly electrically connected to the outer conductor 91 and the inner conductor 92, the semiconductor wafer 94 in the figure is not further connected to the inner conductor 02 and the outer conductor 91 by wires, respectively. 11 to 12 show a semiconductor light source device 6 according to a third embodiment of the present invention. The semiconductor light source device 60 includes a guide wire plate 6 such as a slab or a solution heat f, for example, a light-emitting body. The semiconductor wafer 62 of the cymbal, the concentrating cup 邸 and the array lens. Wherein, the poly-cup 65 has a light-emitting port 66, and the periphery of the light-emitting port 66 is provided with four grooves 65 evenly distributed so that the heat-conductive substrate 61 having a cross shape can be installed along the four grooves 651. In 65, the light generated by the semiconductor wafer 62 is concentrated by the collecting cup 65 in the direction of the light exit port 66. As shown in the figure, the ν thermal substrate 61 has a plurality of planes 611 and side edges 618 for selectively attaching the semiconductor wafers, and has a pad 613 as a circuit wiring for attaching the semiconductor wafer. 62. Since the semiconductor wafer 62 is a flip chip, it can be directly attached to the pad 613 of the side edge 618 of the heat conductive substrate 61, and the circuit wiring of the pad 613 is used as the A power supply electrode of the semiconductor wafer 62. Further, in order to make the light generated by the semiconductor light source device 60 more evenly distributed, an array lens 69 is also disposed on the light exit port 66 of the collecting cup 65. In the figure, the structure of the array lens 69 is constituted by a concave lens arranged in an array, so that the light collected by the collecting cup 65 in the direction of the light exiting port 66 is further refracted and more uniformly distributed in the direction of the light exit opening 66. Of course, as is known to those skilled in the art, the structure of the array lens 69 can also be formed by a convex lens arranged in an array, and the light generated by the semiconductor light source device 60 can be dispersed to be more evenly distributed over the light exit port. 0 As can be seen from the foregoing description, since the semiconductor light source device 1Q or (9) is such that the semiconductor wafer η, 13, or 62, _ is, for example, a slab-shaped flat heat-conducting substrate 1 or μ, it is suspected that a foot can be provided. _ surface spurious compilation. Special Conductor Guangshangzhou 42 _• The above can pack more semiconductor dies in a smaller volume to achieve better concentrating effect. In addition, since the semi-conducting # can be used as a power supply electrode, it can also be better integrated with the external county. The thermal energy generated by the film is rapidly dissipated, and although the preferred embodiment of the present invention has been disclosed above, the invention is also applicable to those skilled in the art without departing from the invention. The scope of the invention is as defined in Patent Model 15 and therefore the protection model of the present invention is 200820460. [Simple Description of the Drawings] FIG. 1 shows a first embodiment according to the present invention. A perspective view of a semiconductor light source device. Fig. 2 is an exploded perspective view showing Fig. 1. 3 is a perspective view showing a semiconductor light source device according to a second embodiment of the present invention. Fig. 4 is an exploded perspective view showing Fig. 3. Fig. 5 is an enlarged perspective view showing the main light source of Fig. 4. Figure 6 is a cross-sectional view showing the main light source of Figure 4. Fig. 7 is a plan view showing the main light source of Fig. 4. Fig. 8 is a plan view showing another connection mode of the main light source of Fig. 4. Figure 9 is a top plan view showing a structural change of the main light source of Figure 4. Figure 10 is a top plan view showing another structural change of the main light source of Figure 4. Figure 11 is a perspective view showing a semiconductor light source device in accordance with a third embodiment of the present invention. Figure 12 is an exploded perspective view showing Figure 11. [Main component symbol description] 10, 30, 60 semiconductor light source device 11, 3, 61 heat conductive substrate 111 first surface 112 second surface 113, 613 pad 115 funnel block 118, 418, 618 side 12, 13, 14 34, 62, semiconductor wafer 15, 35, 65 concentrating cup 12 200820460 151, 651 groove 16, 66 light exit port 311 V-shaped notch 40, 70, 80, 90 main light source 51 nut 41, 71, 81, 91 Conductor 411 first end 412 second end 413 through hole 414 outer surface 4141, 4142, 4143, 4144, 4211, 4212, 4213, 4214 plane 415 thread 42, 72, 82, 92 inner conductor 421 tapered end 〃 43 insulation layer 44, 74, 84, 94 semiconductor wafer 45, 75, 85 wire 69 array lens 611 plane 8141, 8142, 8143, 9141, 9142, 9143, 9144, 9145 plane 13