200811955 九、發明說明： 【發明所屬之技術領域】 技術領域 本發明係有關於一種具有可在半導體晶圓之背面形成 5 除氣層之機能的除氣層形成裝置。 【先前技術2 背景技術BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a degassing layer forming apparatus having a function of forming a degassing layer on the back surface of a semiconductor wafer. [Prior Art 2 Background]
在研磨形成有複數1C、LSI等元件之半導體晶圓之背 面，將其形成為所期望之厚度後，可藉由切割裝置將其分 10刎成各個元件，然後使用於各種電子機器上。 然而，右半導體晶圓之厚度薄到如在1〇〇^m以下，則 進行鏡面加工時，就會有半導體晶圓之所謂的除氣效果降 低而使件品質降低的問題。因此，而提出了藉由在半 V體曰曰圓之背面形成多晶石夕層、石夕氮化層等來產生除氣效 15果的技術(例如，請參照專利文獻1)。其中，在背面形成除 亂層係在研磨背面而將半導體晶圓形成為所期望的厚度後 逸。 寻利文獻1】特開2006—41258號公報 【發明内容】 20 發明揭示 奄明所欲解決之問題 出而ϋ在研磨半導體晶圓之背面時，會使特表面露 易形^雜面’並與空射之氧紐質粒應，造成不 °备揮除氣效果之多㈣層、錢化層的問題。 5 200811955 因此，本發明之目的在於，在經研磨後之半導體晶圓 之背面形成由多晶矽層或矽氮化層等構成之除氣層時，可 使除氣層產生充分之除氣效果。 用以解決問題之手段 5 本發明係有關於可研磨正面形成有複數元件之半導體 晶圓之背面，且可在該背面形成除氣層的除氣層形成裝 置該除氣層形成裝置包含有：吸盤(chuck table)，係具有 可固持半導體晶圓之固持面者；研磨機構，係可研磨正面 側已被固持於該固持面上之半導體晶圓的背面者；清洗機 1〇構，係可清洗該背面經研磨後之半導體晶圓者；及除氣層 形成機構，係可收容已清洗完畢之半導體晶圓，且可在該 半導體晶圓之背面形成矽氮化層或多晶矽層之任一者作為 除氣層者。 除氣層形成機構最好是兼具可對半導體晶圓之背面進 15行乾蝕刻之乾蝕刻機構的機能。 發明效果 本發明之除氣層形成裝置因設有研磨機構及除氣層形 成機構，所以可在研磨半導體晶圓之背面後，立刻在成為 /舌1*生面之該月面形成多晶石夕層或氮化層，因此可在背面與 2〇空氣中之氧或雜質等反應前形成除氣層。 除氣層形成機構兼具可對半導體晶圓之背面進行乾蝕 刻之乾飿刻機構的機能，而可對研磨後之#面進行乾餘 刻，使半導體晶圓之抗彎強度提高，並且就算是半導體晶 圓之背面在研磨後與空氣中之氧或雜質等產生反應，也可 6 200811955 進行乾蝕刻將該部分去除掉。 【實施方式1 實施發明之最佳形態 第1圖所示之除氣層形成裝置卜係可研磨半導體晶圓 之背面，且可在該經研磨後之背面形成除氣層的裝置。After polishing the surface of a semiconductor wafer on which a plurality of elements such as 1C and LSI are formed, and forming them into a desired thickness, they can be divided into individual elements by a dicing device and then used in various electronic devices. However, when the thickness of the right semiconductor wafer is as thin as 1 μm or less, when the mirror processing is performed, there is a problem that the so-called degassing effect of the semiconductor wafer is lowered to lower the quality of the material. Therefore, a technique for producing a degassing effect by forming a polycrystalline stone layer, a stone nitride layer, or the like on the back surface of a semi-V body circle is proposed (for example, refer to Patent Document 1). Here, the formation of the disorder layer on the back surface is performed on the polished back surface to form the semiconductor wafer to a desired thickness. The invention of the invention discloses that the problem to be solved by the invention is that when the back surface of the semiconductor wafer is polished, the surface of the semiconductor wafer is easily formed. Oxygen-incorporated plasmids with air-vacuation should cause the problem of not much (four) layers and money layers. 5 200811955 Therefore, an object of the present invention is to provide a degassing layer with a sufficient degassing effect when a degassing layer composed of a polycrystalline germanium layer or a tantalum nitride layer is formed on the back surface of the polished semiconductor wafer. Means for Solving the Problem 5 The present invention relates to a degassing layer forming apparatus which can grind a back surface of a semiconductor wafer on which a plurality of elements are formed on the front surface and which can form a degassing layer on the back surface. The degassing layer forming apparatus includes: a chuck table having a holding surface capable of holding a semiconductor wafer; and a polishing mechanism for polishing a back surface of the semiconductor wafer on the front side that has been held on the holding surface; the cleaning machine 1 Cleaning the back surface of the polished semiconductor wafer; and the degassing layer forming mechanism for accommodating the cleaned semiconductor wafer, and forming a tantalum nitride layer or a polysilicon layer on the back surface of the semiconductor wafer As a degassing layer. Preferably, the degassing layer forming mechanism has a function of a dry etching mechanism capable of dry etching 15 lines of the back surface of the semiconductor wafer. Advantageous Effects of Invention Since the degassing layer forming apparatus of the present invention is provided with a polishing mechanism and a degassing layer forming mechanism, it is possible to form a polycrystalline stone on the lunar surface which becomes the / tongue 1* dough immediately after polishing the back surface of the semiconductor wafer. The layer or the nitride layer can form a degassing layer before the back side reacts with oxygen or impurities in the air. The degassing layer forming mechanism has the function of a dry etching mechanism that can dry-etch the back surface of the semiconductor wafer, and can dry the after-surface of the semiconductor wafer to improve the bending strength of the semiconductor wafer, and even if The back side of the semiconductor wafer reacts with oxygen or impurities in the air after grinding, and can be removed by dry etching in 200811955. [Embodiment 1] BEST MODE FOR CARRYING OUT THE INVENTION The degassing layer forming apparatus shown in Fig. 1 is a device capable of polishing the back surface of a semiconductor wafer and forming a degassing layer on the back surface after the polishing.
置1中研磨‘背研2時，在正面有可保護元件d之保護 構件H)，且如第半導體晶Ww係與保護構件赚 為一體。 在除氣層形成裝置1中’可在如第2圖所示之半導體曰 圓w之背面W2形成除減。該半導體晶，係由分隔道曰二 劃分且在正面1丨形成有複數元件D者，且在除氣層形成裝 如第3圖所不，除氣層形成前之半導體晶圓娜在正面 貼有保護構件10之狀態下之半導體晶圓貿(以下簡稱「半導 1體晶圓W」），且收容於第一晶圓盒11中。另一方面，除氣 層形成後之半導體晶圓W係在正面貼有保護構件1〇之狀態 下收容於第二晶圓盒12中。 第1圖所示之第一晶圓盒11及第二晶圓盒12附近配設 有運出入機構13，且該運出入機構具有可從第一晶圓盒 11運出加工前之半導體晶圓，並將已加工完畢之半導體晶 圓運入第二晶圓盒12中的機能。運出入機構丨3係構造成在 可自由彎曲之臂部130之前端設有可固持半導體晶圓之固 持部131，且固持部131之可動區域配設有可將加工前之半 導體晶圓的位置對好的對位機構14、及可清洗已加工完畢 之半導體晶圓之清洗機構15。清洗機構15設有可固持並旋 7 200811955 轉半導體晶圓之轉盤150,且為其前面及後面側具有開口的 結構。 對位機構14附近配設有第一運送機構16,而清洗機構 15附近則配設有第二運送機構17。第一運送機構16具有可 " 5將載置於對位機構14之加工前之半導體晶圓運送到其中一 • 吸盤的機能，而第二運送機構17則具有可將固持於其中一 吸盤之已加工完畢之半導體晶圓運送到清洗機構15的機 鲁能。4個吸盤18分別具有可固持半導體晶圓之固持面18〇， 並可自轉及公轉地支撐於旋轉台19上，且藉由旋轉台19的 10 旋轉，可使其中一吸盤移到第一運送機構16及第二運送機 構17附近的位置。 第一研磨機構20包含有具有垂直方向之軸心的心轴 22 ’用以支撐心軸22並使其可旋轉之心轴支柱23 ;連接於 心軸22之其中一端的馬達24 ;設於心轴22之另一端的輪竿 15 25 ;及安裝於輪架25且下面固接有磨石27之研磨輪26，且 # 為可藉由驅動馬達24來旋轉心轴22，使旋轉磨石27也跟著 旋轉的結構。磨石27係使用如粗研磨用之磨石。 第一研磨機構2〇可藉由第一研磨運送機構28在垂直方 — 向上移動。第一研磨運送機構28包含有配設於垂直方向之 20 一對導執29 ;滑動接觸於導執29之升降板30 ;及可使升降 板30升降的馬達31，且為可藉由馬達31之驅動，在導執乃 導引升降板30升降，而使固定於升降板3〇之第一研磨機構 20也跟著升降的結構。 第二研磨機構21包含有具有垂直方向之轴心的心轴 8 200811955 32 ;用以支撐心軸32並使其可旋轉之心轴支柱33 ;連接於 心軸32之其中一端的馬達34 ;設於心轴32之另一端的輪架 35 ;及安裝於輪架35且下面固接有磨石37之研磨輪36，且 為可藉由驅動馬達34來旋轉心軸32，使磨石37也跟著旋轉 5 的結構。 第二研磨機構21可藉由第二研磨運送機構38在垂直方 向上移動。第二研磨運送機構38包含有配設於垂直方向之 導執39 ;滑動接觸於導執39之升降板40 ;及可使升降板4〇 升降的馬達41，且為藉由馬達41之驅動，在導執39導引升 10降板40升降，而使固定於升降板40之第二研磨機構21也跟 著升降的結構。 在要研磨收容於第一晶圓盒11中之半導體晶圓界時， 係藉由運出入機構13將半導體晶圓W運送到對位機構η， 將半導體晶圓W的中心對準預定位置後，再藉由第一運送 機構16運送至位於附近的吸盤18上。半導體晶圓w在吸盤 18中係在正面貼有保護構件10之側被固持，且背面W2露出 的狀態。 接著，藉由將旋轉台19朝逆時針方向旋轉預定角度(在 圖示例中為90度），可使固持於吸盤18之半導體晶圓w移動 20 至第一研磨機構20正下方。然後’半導體晶圓W會隨著旋 轉的吸盤18—起旋轉’並且隨著心轴22的旋轉，磨石27也 會跟著旋轉，再藉由第一研磨運送機構28使第一研磨機構 20下降，往下方運送進行研磨。如此一來，可旋轉之磨石 27即可接觸半導體晶圓W之背面W2,對該背面W2進行粗研 9 200811955In the case of grinding 1, the back protective layer 2 has a protective member H for protecting the element d, and the semiconductor crystal Ww system is integrated with the protective member. In the degassing layer forming apparatus 1, 'de-minus can be formed on the back surface W2 of the semiconductor wafer w as shown in Fig. 2. The semiconductor crystal is divided into two by the dividing channel and formed with a plurality of elements D on the front side, and the semiconductor layer is formed on the front side of the degassing layer as shown in FIG. The semiconductor wafer trade (hereinafter referred to as "semi-conductive first wafer W") in the state of the protective member 10 is housed in the first wafer cassette 11. On the other hand, the semiconductor wafer W after the formation of the degassing layer is housed in the second wafer cassette 12 in a state in which the protective member 1 is attached to the front surface. A loading and unloading mechanism 13 is disposed in the vicinity of the first wafer cassette 11 and the second wafer cassette 12 shown in FIG. 1 , and the loading and unloading mechanism has a semiconductor wafer that can be transported from the first wafer cassette 11 before processing. And transporting the processed semiconductor wafer into the function of the second wafer cassette 12. The transport mechanism 3 is configured to have a holding portion 131 for holding the semiconductor wafer at the front end of the freely bendable arm portion 130, and the movable portion of the holding portion 131 is provided with a position for the semiconductor wafer before processing A good alignment mechanism 14 and a cleaning mechanism 15 for cleaning the processed semiconductor wafer. The cleaning mechanism 15 is provided with a turntable 150 for holding and rotating the semiconductor wafer of 200811955, and having an opening for the front and rear sides thereof. A first transport mechanism 16 is disposed in the vicinity of the registration mechanism 14, and a second transport mechanism 17 is disposed in the vicinity of the cleaning mechanism 15. The first transport mechanism 16 has a function of "storing the semiconductor wafer placed before the processing of the alignment mechanism 14 to one of the chucks, and the second transport mechanism 17 has a function of holding the chuck at one of the chucks. The processed semiconductor wafer is transported to the machine Luneng of the cleaning mechanism 15. The four suction cups 18 respectively have a holding surface 18 可 which can hold the semiconductor wafer, and can be supported on the rotary table 19 by rotation and revolution, and one of the suction cups can be moved to the first transport by the rotation of the rotary table 19 The position near the mechanism 16 and the second transport mechanism 17. The first grinding mechanism 20 includes a mandrel 22' having a shaft axis in a vertical direction for supporting and rotating the mandrel 22, and a motor 24 connected to one end of the mandrel 22; a rim 15 25 at the other end of the shaft 22; and a grinding wheel 26 mounted on the wheel frame 25 and fixed with a grindstone 27 on the lower side, and # is a rotary motor 27 by rotating the mandrel 22 by the drive motor 24 Also follow the structure of the rotation. The grindstone 27 is a grindstone such as a coarse grind. The first grinding mechanism 2 can be moved vertically in the vertical direction by the first grinding transport mechanism 28. The first lapping transport mechanism 28 includes a pair of guides 29 disposed in the vertical direction, a lift plate 30 slidably contacting the guide 29, and a motor 31 for lifting the lift plate 30, and is rotatable by the motor 31. The driving is performed by guiding the lifting plate 30 up and down, and the first grinding mechanism 20 fixed to the lifting plate 3 is also moved up and down. The second grinding mechanism 21 includes a mandrel 8 having a vertical axis, 200811955 32, a mandrel strut 33 for supporting and rotating the mandrel 32, and a motor 34 connected to one end of the mandrel 32. a wheel carrier 35 at the other end of the mandrel 32; and a grinding wheel 36 mounted on the wheel frame 35 and fixed to the lower surface of the grinding stone 37, and the spindle 32 is rotated by the driving motor 34, so that the grinding stone 37 is also Follow the structure of the rotation 5. The second grinding mechanism 21 is movable in the vertical direction by the second grinding conveyance mechanism 38. The second lapping transport mechanism 38 includes a guide 39 disposed in the vertical direction, a lift plate 40 slidably contacting the guide 39, and a motor 41 for lifting the lift plate 4, and driven by the motor 41, At the guide 39, the lift 10 is lowered and lowered, and the second grinding mechanism 21 fixed to the lift plate 40 is also moved up and down. When the semiconductor wafer boundary accommodated in the first wafer cassette 11 is to be polished, the semiconductor wafer W is transported to the alignment mechanism η by the carry-in mechanism 13 to align the center of the semiconductor wafer W with a predetermined position. And then transported by the first transport mechanism 16 to the suction cup 18 located nearby. The semiconductor wafer w is held in the chuck 18 on the side where the protective member 10 is attached to the front surface, and the back surface W2 is exposed. Next, by rotating the turntable 19 counterclockwise by a predetermined angle (90 degrees in the illustrated example), the semiconductor wafer w held by the chuck 18 can be moved 20 directly below the first polishing mechanism 20. Then, 'the semiconductor wafer W will rotate with the rotating chuck 18' and as the mandrel 22 rotates, the grindstone 27 will also rotate, and the first grinding mechanism 20 will be lowered by the first grinding transport mechanism 28. , transport it to the bottom for grinding. In this way, the rotatable grindstone 27 can contact the back surface W2 of the semiconductor wafer W, and the back surface W2 is roughed. 9 200811955
如此，在粗研磨結束後’藉由將旋轉台19朝逆時針方 向旋轉預定角度，可將半導體晶圓W移動至第二研磨機構 21正下方。然後，半導體晶圓W會隨著旋轉的吸盤μ 一起 5 旋轉，並且隨著心轴32的旋轉，磨石37也會跟著旋轉，再 藉由第二研磨運送機構38使第二研磨機構21下降，往下方 運送進行研磨。如此一來，可旋轉之磨石37即可接觸半導 體晶圓W之背面W2 ’對該背面W2進行精研磨。 10 15Thus, after the rough polishing is completed, the semiconductor wafer W can be moved directly below the second polishing mechanism 21 by rotating the rotary table 19 by a predetermined angle in the counterclockwise direction. Then, the semiconductor wafer W is rotated 5 along with the rotating chuck μ, and as the mandrel 32 rotates, the grindstone 37 is also rotated, and the second grinding mechanism 21 is lowered by the second grinding transport mechanism 38. , transport it to the bottom for grinding. In this manner, the rotatable grindstone 37 can be in contact with the back surface W2 of the semiconductor wafer W to finish the back surface W2. 10 15
20 精研磨結束後，藉由將旋轉台19朝逆時針方向旋轉預 定角度，可將吸盤18移動至第二運送機構17附近。然後， 藉由第二運送機構17固持半導體晶圓w，並將其運送至清 洗機構I5之轉盤150上。在清洗機構15中，半導體晶圓㈣ 在背面W2露㈣狀態下固持於轉盤⑼，且轉盤15〇會於旋 轉時一併喷射洗淨水，以去除附著於背面W2之研磨屑。缺 後’轉盤15G會於旋轉時-㈣射高壓纽，时除洗淨水。 如此，經研磨背面且清洗後之半導體晶圓W可藉由鄰 接於π洗機構I5之第二運送機構43運送至除氣層形成機構 47。第三運送機構43包含有可吸辭導體晶之吸附部 44;可使吸附部44朝水平方向及垂直方向移動之臂部45; 及用以驅動臂部45之驅動外 洗後之半導體晶圓W，t 6’且藉由吸附部44可吸附清 料送至除氣層形成機構^移動吸附部44將半導體晶圓 如第4圖所示，降 •、m構成之:體：成機構47設有由複數氣體槽 礼腹槽部48 ;透過閥49a、49b、49c 10 200811955 連接於各個氣體槽，且可混合氣體之混合部5G。在混合部 5〇中生成之氣體可運送至氣體供應部5卜再由氣體供應部 51供應至處理部52。 構成氣體槽部48之各個氣體槽蓄積有乾蝕刻用之氣體 5及除氣層形成用之氣體。在第4圖之例中，氣體槽他中係 畜積SF#為乾钱刻用之氣體。另一方面，氣體槽.中則 係蓄積Si^-NH3，而氣體槽48c中係蓄積以私，作為乾蝕刻 用之氣體。 如第4圖所示，處理部52為由可進行電漿蝕刻之蝕刻室 10 W之上#側收谷贺氣機構54，並且由下部側收容用以固持 半導體晶圓W之吸盤55的結構。 噴氣機構54具有可對固持於吸盤55之半導體晶圓界之 背面供應氣體的機能，軸部54a係透過軸承56而可自由升降 地穿通於蝕刻室53中，且内部形成有連通於氣體供應部 15 51，並且連通於由多孔構件形成之喷出部57a的通氣孔57。 喷氣機構54為藉由驅動馬達58使滾珠螺桿59旋動，使具有 螺接於滾珠螺桿59之螺母的升降部60升降，而跟著其升降 的結構。 另一方面，吸盤55係轴部55a透過軸承61而可旋動地穿 20 通於其中，且内部形成有連通於吸引源62之吸引管路63及 連通於冷卻部64之冷卻管路65，而吸引管路63連通於上面 的吸引部63a。 蝕刻室53側部形成有作為欲蝕刻之板狀物之運出入口 的開口部66，且開口部66外側配設有可藉由升降來開啟關 11 200811955 閉開口部66之擋門（shuttei〇67。該擋門67係藉由可由氣缸68 驅動而升降之活塞69進行升降。 蝕刻室53下部形成有連通於排氣部70之排氣口 71，且 由排氣口 71可排出使用過之氣體。又，喷氣機構54及吸盤 5 55連接有高頻電源72，可供給高頻電壓，將氣體電漿化。 除氣層形成機構47可對半導體晶圓w之背面進行乾蝕 刻及在背面形成除氣層，亦可直接在背面形成除氣層而不 進行乾蝕刻。以下係說明對背面進行乾蝕刻後在該背面形 成除氣層的情形。 10 半導體晶圓W係在使擋門67下降讓開口部66開啟的狀 態下，使第1圖所示之吸附部44從開口部66進入蝕刻室53内 部，在半導體晶圓W之背面W2朝上露出的狀態下解除吸 附，載置於吸盤55之吸引部63a上，並在吸引部63a使吸附 力產生作用，而固持在吸引部63a上。然後，在使吸附部44 15 退回至蝕刻室53外部後，將擋門67返回原位以關閉開口部 66，且將内部減壓排氣。 接著’開啟閥49a’將SR送入氣體供應部51，再使喷 氣機構54下降，在該狀態下由氣體供應部51將作為蝕刻氣 體之SF0供應至通氣孔57，再由噴氣機構54下面之喷出部 20 57a喷出SF6氣體，並且由高頻電源72將高頻電壓施加於喷 氣機構54與吸盤55之間，使SF6氣體電漿化。如此一來，即 可藉由電漿之蝕刻效果來蝕刻半導體晶圓W之背面，以去 除因研磨而形成之研磨變形。如該例，若使用SF6作為蝕刻 氣體’則半導體晶圓W為矽晶圓時，係藉由F自由基與石夕之 12 200811955 反應生成氟化矽來進行蝕刻。又，雖然沒有進行混合部5〇 之氣體混合，但亦可混合可加速蝕刻之觸媒。 在钱刻結束後，將殘留在處理部52之蝕刻氣體從排氣 口 71往排氣部70排氣。然後，在使處理部52之溫度為 • 5 350〜400它的狀態下開啟如閥4%，使3识4-见13從喷出部573 • 喷出，然後導入處理部52，並且由高頻電源72將高頻電壓 施加於噴氣機構54與吸盤55之間，使SiH4-NH3活化。如此 φ 一來，如第5圖所示，藉由低溫CVD可將SiH4-NH3沉積於已 钕刻之背面，可形成矽氮化層80，將該矽氮化層8〇作為除 10氣層。又，在開啟閥49c使SiH4從喷出部57a喷出，並同樣 地使其活化時，可形成多晶矽層作為除氣層8〇。當除氣層 過薄時’就會有除氣效果無法充分地產生之虞，故除氣層 最好是形成為如0.5〜1_5μιη左右的厚度。 如此’因除氣層形成裝置1設有研磨機構20、21及除氣 15層形成機構47，且可藉由第三運送機構43在其間運送半導 • 體晶圓W，故可在研磨半導體晶圓W之背面W2後，立刻在 成為活性面之該背面W2B成多晶矽層或氮化層。因此可在 背面與空氣中之氧或雜質等反應前形成除氣層。 _ 又，除氣層形成機構47兼具可對半導體晶圓W之背面 20 W2進行乾蝕刻之乾蝕刻機構的機能，與可藉由形成除 氣層的機能，因此可對研磨後之背面進行乾蝕刻，使半導 體晶圓之抗彎強度提高，並且就算是半導體晶圓之背面在 研磨後與空氣中之氧或雜質等產生反應，也可進行乾餘刻 將該部分去除掉。 13 200811955 如此，使擋門67下降而開啟開口部66，藉由吸附部44 吸附半導體晶圓W，並且使吸附部44移動，將背面形成有 除氣層之半導體晶圓W運出至蝕刻室53外部。然後，使吸 附部44由第1圖所示之清洗機構15之後面侧進入，將半導體 5 晶圓W轉移到轉盤150上清洗半導體晶圓後，再藉由運出入 機構13收容於晶圓盒12中。對收容於晶圓盒11中所有的半 導體晶圓進行如上之步驟時，可將背面形成有除氣層之所 有半導體晶圓W收容於晶圓盒12中。 L圖式簡單說明3 10 第1圖係顯示除氣層形成裝置之一例的立體圖。 第2圖係顯示半導體晶圓及保護構件的立體圖。 第3圖係顯示在半導體晶圓之正面貼附有保護構件之 狀態的立體圖。 第4圖係顯示除氣層形成裝置之結構的截面圖。 15 第5圖係顯示形成有除氣層之半導體晶圓的放大截面 圖。 20 14 200811955 【主要元件符號說明】After the finish polishing is completed, the chuck 18 can be moved to the vicinity of the second transport mechanism 17 by rotating the turntable 19 counterclockwise by a predetermined angle. Then, the semiconductor wafer w is held by the second transport mechanism 17 and transported to the turntable 150 of the cleaning mechanism I5. In the cleaning mechanism 15, the semiconductor wafer (4) is held by the turntable (9) in the state in which the back surface W2 is exposed (four), and the turntable 15 is sprayed with the washing water at the time of rotation to remove the grinding debris adhering to the back surface W2. After the lack of 'turntable 15G will rotate when - (four) shot high pressure, when the washing water. Thus, the semiconductor wafer W which has been polished and cleaned can be transported to the degassing layer forming mechanism 47 by the second transport mechanism 43 adjacent to the π-washing mechanism I5. The third transport mechanism 43 includes an adsorption portion 44 that can absorb the conductor crystal; an arm portion 45 that can move the adsorption portion 44 in the horizontal direction and the vertical direction; and a semiconductor wafer that is driven to drive the arm portion 45 to be externally washed. W, t 6' is adsorbed by the adsorption unit 44 and sent to the degassing layer forming mechanism. The moving adsorption unit 44 moves the semiconductor wafer as shown in Fig. 4, and is composed of m and m: A plurality of gas tanks are provided, and a gas mixing chamber 5G is connected to each of the gas tanks through the valves 49a, 49b, 49c 10 200811955. The gas generated in the mixing section 5 is transported to the gas supply section 5 and supplied to the processing section 52 by the gas supply section 51. Each of the gas grooves constituting the gas groove portion 48 accumulates a gas 5 for dry etching and a gas for forming a degassing layer. In the example of Fig. 4, the gas tank is a gas that is used for dry money. On the other hand, in the gas tank, Si^-NH3 is accumulated, and the gas tank 48c is stored as a gas for dry etching. As shown in FIG. 4, the processing unit 52 is a structure in which the #-side valley hoisting mechanism 54 is provided in the etching chamber 10 W capable of plasma etching, and the chuck 55 for holding the semiconductor wafer W is housed on the lower side. . The air blowing mechanism 54 has a function of supplying gas to the back surface of the semiconductor wafer boundary held by the suction cup 55. The shaft portion 54a is permeable to the etching chamber 53 through the bearing 56, and is internally connected to the gas supply portion. 15 51 and communicates with the vent hole 57 of the discharge portion 57a formed of the porous member. The air blowing mechanism 54 is a structure in which the ball screw 59 is rotated by the drive motor 58 to raise and lower the lifting portion 60 having the nut screwed to the ball screw 59, and to ascend and descend. On the other hand, the suction cup 55 is a shaft portion 55a that is rotatably passed through the bearing 61, and has a suction line 63 that communicates with the suction source 62 and a cooling line 65 that communicates with the cooling unit 64. The suction duct 63 is in communication with the upper suction portion 63a. An opening portion 66 as an exit port of the plate to be etched is formed on the side of the etching chamber 53, and a shutter door that can be opened and closed by the lifting and lowering opening 11 200811955 is closed (shuttei〇67) The shutter 67 is lifted and lowered by a piston 69 that can be lifted and lowered by the air cylinder 68. The lower portion of the etching chamber 53 is formed with an exhaust port 71 that communicates with the exhaust portion 70, and the exhaust port 71 can discharge the used gas. Further, the air jet mechanism 54 and the suction cup 55 are connected to the high-frequency power source 72 to supply a high-frequency voltage to plasma the gas. The degassing layer forming mechanism 47 can dry-etch the back surface of the semiconductor wafer w and form a back surface. The degassing layer may directly form a degassing layer on the back surface without dry etching. The following describes a case where a degassing layer is formed on the back surface after dry etching on the back surface. 10 The semiconductor wafer W is lowered in the gate 67 When the opening portion 66 is opened, the adsorption portion 44 shown in Fig. 1 enters the etching chamber 53 from the opening portion 66, and the adsorption is released while the back surface W2 of the semiconductor wafer W is exposed upward, and is placed on the suction cup. 55 on the attraction 63a, and in The suction portion 63a causes the suction force to act on the suction portion 63a. Then, after the adsorption portion 44 15 is retracted to the outside of the etching chamber 53, the shutter 67 is returned to the original position to close the opening portion 66, and the inside is reduced. Next, the 'opening valve 49a' sends the SR to the gas supply unit 51, and then the air injection mechanism 54 is lowered. In this state, the SF0 as the etching gas is supplied to the vent hole 57 by the gas supply unit 51, and then the air is blown. The ej6 gas is ejected from the discharge portion 20 57a under the mechanism 54, and a high-frequency voltage is applied between the air injection mechanism 54 and the suction cup 55 by the high-frequency power source 72 to plasmaize the SF6 gas. The etching effect of the plasma etches the back surface of the semiconductor wafer W to remove the polishing distortion formed by the polishing. In this example, if SF6 is used as the etching gas, the semiconductor wafer W is a germanium wafer, and is obtained by F. Free radicals and Shi Xizhi 12 200811955 The reaction produces lanthanum fluoride for etching. Further, although the mixing of the gas in the mixing section is not carried out, it is also possible to mix the catalyst which accelerates the etching. Etching of processing portion 52 The body is exhausted from the exhaust port 71 to the exhaust portion 70. Then, when the temperature of the processing portion 52 is 5 350 to 400, it is opened as a valve 4%, so that the 3 sense 4 - see 13 from the discharge portion 573 • ejected, and then introduced into the processing unit 52, and a high-frequency power source 72 applies a high-frequency voltage between the air-jet mechanism 54 and the suction cup 55 to activate SiH4-NH3. Thus, as shown in Fig. 5, SiH4-NH3 can be deposited on the back surface of the engraved by low temperature CVD, and a tantalum nitride layer 80 can be formed, and the tantalum nitride layer 8 is used as a depletion layer 10. Further, the SiH4 is ejected by opening the valve 49c. When the portion 57a is ejected and activated in the same manner, a polysilicon layer can be formed as the degassing layer 8A. When the degassing layer is too thin, the degassing effect may not be sufficiently generated, so that the degassing layer is preferably formed to have a thickness of, for example, about 0.5 to 1 - 5 μm. Thus, since the degassing layer forming apparatus 1 is provided with the polishing mechanisms 20 and 21 and the degassing 15 layer forming mechanism 47, and the semiconductor wafer W can be transported therebetween by the third transport mechanism 43, the semiconductor can be ground. Immediately after the back surface W2 of the wafer W, a polysilicon layer or a nitride layer is formed on the back surface W2B which becomes an active surface. Therefore, a degassing layer can be formed before the back side reacts with oxygen or impurities in the air. Further, the degassing layer forming mechanism 47 has both a function of a dry etching mechanism capable of dry etching the back surface 20 W2 of the semiconductor wafer W, and a function of forming a degassing layer, so that the back surface after polishing can be performed. The dry etching increases the bending strength of the semiconductor wafer, and even if the back surface of the semiconductor wafer reacts with oxygen or impurities in the air after grinding, the portion can be removed by dryness. 13 200811955 In this manner, the shutter 67 is lowered to open the opening portion 66, the semiconductor wafer W is adsorbed by the adsorption portion 44, and the adsorption portion 44 is moved to transport the semiconductor wafer W having the degassing layer formed on the back surface to the etching chamber. 53 external. Then, the adsorption unit 44 is introduced from the rear surface side of the cleaning mechanism 15 shown in Fig. 1, and the semiconductor 5 wafer W is transferred to the turntable 150 to clean the semiconductor wafer, and then stored in the wafer cassette by the loading and unloading mechanism 13. 12 in. When the above steps are performed on all of the semiconductor wafers accommodated in the wafer cassette 11, all of the semiconductor wafers W on which the degassing layer is formed on the back surface can be housed in the wafer cassette 12. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an example of a degassing layer forming apparatus. Fig. 2 is a perspective view showing a semiconductor wafer and a protective member. Fig. 3 is a perspective view showing a state in which a protective member is attached to the front surface of the semiconductor wafer. Fig. 4 is a cross-sectional view showing the structure of the degassing layer forming device. 15 Fig. 5 is an enlarged cross-sectional view showing a semiconductor wafer on which a degassing layer is formed. 20 14 200811955 [Description of main component symbols]
1.. .除氣層形成裝置 10…保護構件 11…第一晶圓盒 12…弟二晶圓盒 13.··運出入機構 130.. .臂部 131.. .固持部 Μ…對位麵 15…清洗機構 150…轉盤 16…第一運送機構 17…第二運送機構 18…吸盤 180.. .固持面 19···旋轉台 20…第一研磨機構 21…第二^磨麵 22,32···心軸 23,33. ··心軸支柱 24.34.. .馬達 25,35…輪架 26,36…研磨輪 27,37···磨石 28…第一研磨運送谢冓 29,39…導執 30,40···升降板 31，41...馬達 38·.·第二^磨運送機構 43…第三運送機構 44.. .吸附部 45…臂部 46.. .驅動部 47…除氣層形成機構 48…氣體槽部 48a-48c···氣體槽 49a-49c…閥 50…混合部 51…氣體供應部 52…處理部 53…蝕刻室 54···喷氣機構 54七55&···轴部 55…吸盤 56.61.. .軸承 57·.·通氣孔 57a…噴出部 15 200811955 58...馬達 69.··活塞 59…滾珠螺桿 70".排氣部 60...升降部 Ή...排氣口 62...吸引源 72···南頻電源 63…吸引管路 80...除氣層 63a···吸引部 D…元件 64...冷卻部 W·.·半導體晶圓 65…冷卻管路 W1...正面 66...開口部 …背面 67…擋門 S...分隔道 68. · ·氣缸 161. Degassing layer forming device 10...Protection member 11...First wafer cassette 12...Different wafer cassette 13···Transporting mechanism 130... Arm portion 131.. Holding unit Μ...alignment Surface 15...cleaning mechanism 150...turning wheel 16...first transporting mechanism 17...second transporting mechanism 18...suction cup 180.. holding surface 19···rotating table 20...first grinding mechanism 21...second grinding surface 22, 32··· mandrel 23, 33. · mandrel support 24.34.. motor 25, 35... wheel carrier 26, 36... grinding wheel 27, 37··· grindstone 28... first grinding transport Xie Yu 29, 39...lead 30,40···lifting plate 31,41...motor 38·.·second grinding transport mechanism 43...third transport mechanism 44..adsorption unit 45...arm 46.. drive Portion 47...Degassing layer forming mechanism 48...Gas tank portion 48a-48c··Gas tank 49a-49c...Valves 50...Mixing unit 51...Gas supply unit 52...Processing unit 53...Erosion chamber 54···Air jet mechanism 54 755&···shaft part 55...sucker 56.61.. bearing 57·.·ventilating hole 57a...spraying part 15 200811955 58...motor 69.··piston 59...ball screw 70".exhaust part 60. .. Lifting section Ή...Exhaust port 62...Attraction source 72·· • Southern frequency power supply 63... suction line 80... degassing layer 63a··· suction unit D... element 64... cooling unit W·. semiconductor wafer 65... cooling line W1... front side 66. .. opening part... back side 67... blocking door S... dividing path 68. · · cylinder 16