TW200809019A - Crystal SiC, method and device for producing the same - Google Patents

Abstract

This invention provides a single crystal SiC production method for epitaxially growing high-quality single crystal SiC in which mixing of polycrystalline SiC is avoided, and provides the resulting high-quality single crystal SiC. Moreover, this invention provides a single crystal SiC production device capable of avoiding mixing of polycrystalline SiC and allowing epitaxial growth of high-quality single crystal SiC. The single crystal SiC production method of this invention is characterized by including: a step of arranging, within a crucible, a susceptor mounted with SiC seed single crystals, and a raw material supply tube for supplying raw materials for producing single crystal SiC from the outside; and a step of growing single crystal SiC by supplying raw materials for producing single crystal SiC together with a careier gas, through a raw material supply tube, into the crucible set to a high temperature atmosphere; wherein, assuming the distance between the raw material supply tube and the SiC seed single crystal to be L (mm), and the linear velocity of the carrier gas to be S (mm/sec), a relationship of L/S (serc) ≤3 is satisfied.

Description

200809019 IX. Description of the invention: [Technical field to which the invention pertains], _material and [prior art] (B〇nd energy) ^ 5 and thermal conductivity ^ is therefore quite effective as a harsh environment or equipment . In addition, since ^ g g C〇nStant) is close to the grating constant of GaN (gallium nitride), it is also very useful as a substrate material for GaN-LED. Grid crane (traditionally, the production method of such single crystal SiC includes: sublimation of Sic powder in graphite cmc flank), Rayleigh MethGd crystallization in the inner spectrum of graphite, and ς Raw material configuration • Optimized temperature distribution, then ===Xijishanshan SiC fresh crystal, recrystallize it into insect crystal (epkaxiai) ^文$式& Lifa, the source of the body (gas_SGurce) #由Carrying gas ^), transported to the heated SiC seed single crystal, and a "chemical reaction" on the crystal surface - CVD method for crystal growth; and in the stone, inside, sic In the state where the powder is close to the Sic fresh crystal, the sic ' is recrystallized into a crystal sublimation close method on the sc fresh crystal. However, in the current situation, the various single crystal sic described above is manufactured. Alchemist 'No matter which kind--everyone still has its own problems. First of all, in Ruilifa, although it can produce a single crystal Sic with good crystals, but because of this, natural nucleation occurs. (nudeation) based on long crystals, so it is not easy to shape control As well as crystallized surface control, and in this way, it is impossible to obtain a wafer with a diameter. In the case of the improved Rayleigh method, it is possible to use a high-speed single crystal of about several hundred m/h. SiC ingot (ingot). However, because this method of manufacturing is carried out in 200809019, the crystal growth of the insect crystals, there is a problem of tiny holes in the crystallized (mlcr〇pipe). Although it is possible to produce high-purity and low-defect density, because this method is based on a thin gas source, the crystal growth rate is slow, and the upper limit of the growth rate is only about There is a problem that a long-form single-crystal SiC ingot cannot be obtained. In the sublimation approach method, the first step can be grown in a relatively simple structure, but due to structural limitations, it is still impossible to manufacture a long shape. The problem of early crystalline Sic ingots. Wif 'Industry has proposed a kind of _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Carbon will be reduced by dioxotomy By this method, it is deposited on a single crystal of Sic to grow into a stupid crystal at a high speed (refer to 1). In this manufacturing method, a high-quality single crystal sic can be obtained at a high speed, and it can be It suppresses the occurrence of defects such as microtubules.

The method for producing a single crystal sic reduced by Patent Document 1 is to reduce cerium oxide by carbon at a high temperature in accordance with the following chemical formula (1).

Si02 + 3C-SiC + 2C〇t (chemical formula (1) The reaction of the chemical formula (1) is a chemical reaction, and since Si〇2 is present in the form of a flowing liquid before being evaporated by heating. Therefore, when the chemical reaction occurs continuously on the SiC seed single crystal, the interface energy of the Sic single crystal can be reduced, and the information of the sic powder 'SiSi^ single crystal generated at any time can be grown to Epitaxial. However, if the chemical reaction of the chemical formula (1) is not produced on the single crystal of the sic species, but is produced, for example, during transport on an inert carrier gas transport, and the reaction is completed before reaching the single crystal of the SiC species, the feed is supplied to the species. The single crystal is not cerium oxide and carbon, but sic powder. ...4 In the method for producing early-crystallized SiC disclosed in Patent Document 1, since the other c powder is not placed at a high temperature at which it can be made into a vapor, it is required to be counter-200809019, so if supplied The raw material of the single crystal of SiC is powdered powder. The powder on the surface of the single crystal of Sic does not enter the new "α and the tantalum directly combines with the single crystal of the Sic species. Jian is a polycrystalline Sic that is continuously combined on a single crystal of Sic species, rather than the production of SiC SiC. And, in fact, because the reaction in the chemical formula (1) is as early as possible, it can be heated quickly. The reaction carried out, therefore, the raw material that should be applied to the single crystal of the Sf species is not the sulphur dioxide and the carbon, but the sic powder. & The problem of the single crystal Sic disclosed in Patent Document 1 is a recurring The problem of the invention is as follows: Patent Document 1] Japanese Patent No. 3505597 [Invention] Sic's manufacturing method can avoid multiple knots In the case of the incorporation of SiC, the single crystal SiC of the same σσ shell grows to H, and the two-quality single crystal Sic is obtained according to the method. In addition, the other object of the present invention is to provide "4," the manufacture of J SC. The device can avoid the incorporation of polycrystalline sic and grow the early crystalline Sic of high scallops into epitaxial. The above problem can be solved by the following descriptions of &lt;1:&gt;, &lt;8&gt;, and &lt;9&gt; described below. Preferred Embodiments &lt;2&gt;~&lt;7&gt; ^ &lt;1&gt; A method for producing a single crystal Sic, characterized in that: 戟 and under: a susceptor to which a single crystal of SiC is fixed and used a raw material supply pipe for supplying a raw material for single crystal Sic production from the outside, and a step of being disposed in the crucible; and, in the crucible filled with a high-temperature ambient gas, the raw material for manufacturing the single crystal sic together with the carrier gas The step of supplying the single gentleman 曰 SiC through the raw material supply pipe, and the distance between the material supply pipe and the single crystal of the SiC species is set to L and When the linear velocity of the carrier gas is S (mm/sec), the condition of L/S (sec) $3 is satisfied. The method for producing a single crystal SiC according to <1>, wherein the single crystal ▲ SiC is used as a raw material for the production of oxidized % particles and carbon particles. &lt;3&gt; The method for producing a single crystal SiC according to <1> or <2>, wherein a distance between the raw material supply pipe and the Sic single crystal is 6 mm or less. &lt;4&gt; The method for producing a single crystal Sic of &lt;:1:&gt; or &lt;2&gt;, wherein the distance between the raw material supply tube and the single crystal of the Sic species is 10 mm or less. The method for producing a single crystal Sic of m &lt;5&gt;, <^ or 2>, wherein the linear velocity of the carrier gas is 20 mm/sec or more and 200 mm/sec or less. &lt;6&gt; The method for producing a single crystal SiC of ?α&lt;α&gt; or &lt;2&gt;, wherein the linear velocity of the carrier gas is 60 mm/sec or more and 200 mm/sec or less. &lt;7&gt; The method for producing single crystal SiC according to &lt;1:&gt; or &lt;2&gt;, wherein the carrier gas is argon gas. &lt;7&gt; The &lt;8&gt; is a single crystal SiC which is produced by a method for producing single crystal SiC of &lt;〇&gt;. &lt;9&gt; A single-crystal SiC manufacturing apparatus comprising: a crucible; a susceptor provided with a single crystal of Sic in the crucible; and a raw material supply pipe for supplying a raw material for producing a single crystal Sic from the outside; In addition, a distance adjusting device is further provided for adjusting a distance between the raw material and the single crystal of the SiC species, and/or a linear velocity adjusting device for adjusting a gas carrying gas supplied from the raw material supply pipe. speed. &quot; According to the present invention, a method of producing a single crystal Sic can be obtained. According to this method, the incorporation of polycrystalline SiC can be avoided, and the high-quality single crystal sic can be made into a stupid crystal. In addition, according to the present invention, a single crystal §ic manufacturing apparatus can be obtained, which can avoid the incorporation of polycrystalline sic and grow a high-quality single crystal sic into epitaxial grains. π曰曰 200809019 [Embodiment] Form. The following two steps are included: Supply ps === Bu, the distance between the raw material supply f and the seeded single crystal is set to τ /ς彳\ ' and the linear velocity of the carrier gas is set to When s (mm/sec), the condition of L/S (sec) ^3 is satisfied.社 曰 ΐ 此种 此种 此种 SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC SiC Reduced. At the same time, the reaction of the chemical formula (1) occurs at the interface between the early and the t-crystals, and the Sic formed by the reaction can be imitated by the arrangement information of the sic species early, and the B 曰. By using the HL/S (sec) phantom condition limit alone, it is possible to avoid Sic powder before the raw material for the S1C manufacturing process reaches the Sic single crystal. In the case of "single crystal SiC manufacturing raw material, the Sic seed single crystal is sf powder", which means that the sic is supplied by the raw material supply pipe; the bucket is represented by the above chemical formula (丨) Before the reaction reaches the single crystal of the sic species, it becomes the meaning of SiC powder. The so-called "reaching Sic species single crystal 疋 reaches the SiC seed single crystal" means "reaching the range of the growth reaction that produces a single crystal sic", meaning SiC species single crystal and / or single crystal Sic growth layer . In this specification, L/S (sec) is 3 or less. If L/s (_) is greater than 3, the raw material becomes SiC powder before or after one or all of the raw materials for single crystal SiC production reaches yc single crystal 200809019, and there will be more single crystal SiC after manufacture. The crystalline SiC powder was mixed. L/S (sec) is preferably set in the range of 〇·〇 5 to 3; more preferably 2 or less; and most preferably 1 or less. The distance l (mm) between the raw material supply pipe and the SiC seed single crystal is preferably 60 mm or less; more preferably 10 mm or less. Further, the distance between the raw material supply pipe and the &amp;C single crystal is preferably 1 mm or more. ^ set by the distance between the raw material supply pipe and the single crystal of the Sic species

Fan, the way inside, can effectively avoid the arrival of raw materials in single crystal sic manufacturing &amp;C

In the case of SiC powder, it is produced before crystallization. Further, if the distance between the raw material supply enthalpy and the SiC seed single crystal is within the above range, a good crystal growth rate can be obtained, which is a preferred embodiment. Further, since the distance between the raw material supplier and the single crystal of the SiC species is easily controlled, it is a preferred embodiment. Here, the so-called "distance between the raw material supply pipe and the sic seed single crystal" f曰 between the raw material supply port of the raw material supply pipe (the port of the Sic manufacturing raw material) and the surface of the SiC single crystal the distance. In addition, it is also possible to maintain the distance between the growth of the single crystal sic and the growth layer of the single crystal Sic in the range of the distance between the single crystal of the f*Sic species and the raw material supply port. There is no particular limitation on the distance between the 原料ιί raw material supply pipe and the SiC single crystal. For example, the raw material supply pipe can be made movable: the seat is movable, or both are movable. '戈使; start;:= supply=two kinds==distance, the process of recording a single crystal sic should be between two: 11 200809019 The linear velocity S (mm/sec) of the carrier gas is preferably set to 20mm/ More than sec, 200 mm/sec or less; more preferably set to 60 mm/sec or more and 2 mm/sec or less. If the linear velocity of the carrier gas is set to 2 〇mm/sec or more, the raw material for producing single crystal SiC does not cause clogging in the raw material supply pipe, and thus it is a preferred embodiment. Further, since the linear velocity of the carrier gas is set to 200 mm/sec or less, it is possible to effectively prevent the raw material for single crystal Sic production from becoming a siC powder before reaching the SiC seed single crystal, which is also a preferred embodiment. ‘ ,

Here, the linear velocity S (mm/sec) of the carried gas can be obtained by dividing the flow rate (mm3/sec) of the supplied carrier gas by the product (mm2) of the supply port of the raw material supply pipe. In the present invention, the raw material for single crystal Sic production is supplied together with the carrier gas through the original supply pipe. The raw material for single crystal SiC production is preferably continuously supplied. It is a preferred embodiment that the single crystal sic can be stably grown by continuously supplying a raw material for the production of a single crystal sic. • The raw material for the production of single crystal SiC used in the present invention is preferably cerium oxide particles and hetero. __The supply conditions for the supply of the dioxins and the heterons to one type of early crystallization are provided as long as the raw materials for the production of the single crystal Sic are mixed in the single crystal of the SC species, which is manufactured by Sic. It is also possible to use raw materials or to mix them separately and then on the crystals. As the raw material for producing a single crystal Sic used in the present invention, solid particles of the f and carbon particles can be suitably used. Further, the cerium oxide particles and the carbon particles are not particularly limited in terms of diameter, particle shape, and the like. For example, high-purity sulphur dioxide obtained by flame hydrclysis can be suitably used in the same manner as acetylene. Black (acetylene black) and the like. There is no limit to the supply of π scorpion and carbon particles, and the combination of field &amp; Further, two or more of the oxidized dream particles and the 12 200809019 carbon particles may be used in combination of two or more. Further, the cerium oxide particles and carbon particles may be pretreated as necessary, or other components may be added in a trace amount. The method of supplying the cerium oxide particles and the carbon particles to the single crystal of the sic can be, for example, a method of continuously supplying continuously. For example, a powder feeder that is commercially available can be used to continuously transport the powder. However, in order to avoid the incorporation of oxygen into the supply line of the single crystal sic manufacturing raw material and the single crystal sic manufacturing apparatus, it is preferable to use an inert gas such as Argon or Helium. The substituted hermetic structure. In addition, it is preferable to supply the raw material for manufacturing the single crystal Sic, such as argon gas and helium gas, and the carrier gas is preferably carried. Among the gases, it is preferred to use argon as the carrier gas, because the argon is easy to pass, and it is easier to handle. In addition, when doping in a single crystal Sic, it may be mixed as a solid source in the single material, or may be mixed as a gas source in a single crystal ig body. . For example, nitrogen, A1(CH3)3, Β2Ή6, etc. can be used. circle. S ϋΓ Γ 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状 形状Shape and appropriate choice. For example, it is possible to appropriately use the S-type C single-crystal wafer system to perform the pre-treatment according to the modified Ruili method. There is no special _ in the manufacturing of the surname ,, and it can be appropriately set according to the size, shape, type, and the like of the desired single τ7 ^. The preferred #~2boot__, for example, to obtain the single crystal Sic of the turn, to make the method, the material, the raw material supply method, the ambient gas adjustment method, the pressure control method temperature control method, etc. It can be suitably selected according to the size, shape, and type of the single crystal SiC to be used, and the type and amount of the raw material for single crystal SiC production. The shape of the crucible used in the present invention can be appropriately selected depending on the size and shape of the desired single crystal SiC. However, it is preferable that the crucible used in the present invention has a hole for holding the s 纴 base, and a hole for supplying the original single crystal Sic. In addition to this, the preferred method is such that the π portion is disposed in the straight direction of the configuration. By the convection of the opening portion, the heat is convected, and the ring that rises as the ascending air current rises, and the ambient gas rises as well. It is not helpful for the reaction and can be discharged from the upper portion. 1^ inch such as Wo 4, such ambient gas or raw material powder, etc. can be connected from the upper part and stably produce a single crystal Sic, so it is a better real two open π part, as long as it is set to _ straight The limit on the top of the direction can be limited. When the susceptor or raw material supply pipe is provided with an open top = two from the wrong top of the crucible, = special pedestal or raw material supply pipe, as described above, the temperature inside the hanging net can be prevented from being lowered. There is no particular restriction on the size of the opening of the 4th and the 4th, as long as the ascending airflow rises to the ambient gas, and as the raw material powder which does not contribute to the reaction, The crystallization of the crystal does not test the test = the temperature of the skill, the material of the base is preferably made of graphite. ..., considering the use of raw materials for supplying raw materials for the production of single crystal SiC for use in Kuwan ^ Sic μ: 14 200809019, the distance between the nozzle of the supply officer and the susceptor holding the SiC seed crystal is as described above. Below 60mm, more preferably below i〇mm. Further, in consideration of the range of the use temperature, the material of the supply pipe is preferably made of graphite. The carrier gas is not particularly limited, and is preferably an inert gas, particularly argon* (Ar). Further, the linear velocity at which the carrier gas is ejected from the raw material supply pipe is preferably 20 mm/Se or more and 200 mm/sec or less; more preferably 6 mm/sec or more and 200 mm/sec or less. [Embodiment] Hereinafter, an embodiment of the present invention will be described. Fig. 1 is a view showing an example of a device for producing a single crystal Sic of the present invention, which is exemplified by using a high frequency induction heating furnace. In the sealed chamber 1 of permanent =, a cylindrical cylinder 2 made of carbon (100 mm in diameter and 150 mm in height) is disposed, and a high-frequency induction heating coil 3 is disposed outside the water-cooled sealed chamber 1. A susceptor 5 for holding the seed crystal 4 is inserted through the inside of the cylinder. The base 5 extends to the outside of the cylindrical paste 2, and the rotating mechanism of the base 5 is rotated by the central axis of the base. The / / ^ terminal' holds the normal direction of the surface of the SiC single crystal wafer, which can be slightly parallel to the maximum tilting shirt from the hot straight direction of the ^^ seat. Freely set within the range of the corner 疋0

Further, Jirr is provided with an opening 10 around the base 5 in the direction of the straightness of the circle 2. J should be a single crystal Sic manufacturing raw material supply material supply pipe from the bottom end of the cylinder _ 2 opposite to the pedestal 5: , the outer 'and the other can independently adjust the supply of the original number - ' and can be adjusted Compared with the inert carrier gas for fine (paste), I want to use the raw material of the single-crystal Sic manufacturing raw material to be mixed; and to supply f (four) to mix it, position: oxygen = 15 200809019 - δ,1^^ quantity adjustment, - side (4) heart _^_^ take - edge to domain (four) A flow _ internal continuous supply order = system two = appropriate amount, the _ in addition, in Figure 1, from the raw material The distance from the supply pipe 5 to the distance between the G and the H is controllable. The heating furnace can be changed to a configuration opposite to this by using a vacuum exhaust system (not shown), "IoJJ" can be used in the vacuum supply system (not shown). ^ = In the example, although the positional relationship between the susceptor and the raw material supply pipe is 丄t ^ , , , , ' and not (4) the invention (10) _ can also be viewed or the supply pipe The pedestals are inclined or at right angles to each other: when the crystal is thick in thickness, it is also formed on the susceptor 5 at the front end portion of the s 3 iC single crystal surface and the raw material supply tube discharge port. B is freely adjustable within the range of 4 to 150 mm (full length of _.), = is correct, throttle flow _ general supply _ flow and inner diameter of supply pipe ^ i, J 300?000mm / sec ^ ^ use this high The frequency induction heating furnace is praised in the susceptor according to the following conditions, and is inserted into the cylinder to have a single crystal of H. The single crystal of SiC used here refers to an improved type.瑞有里法^早16 200809019 Single crystal SiC wafer with a diameter of 2 cm. However, various conditions, that is, preparing for the front side separately The sloping surface and the ◦ condition can be used according to the surface of the single-crystal SiC manufacturing raw material, the surface of the surface, and the cerium oxide (MA600) and the cerium oxide (Japan Aer〇sil Co., Ltd. Go to the raw material storage tank. Also, add 3 分 二 矽 / carbon = 1.2 〜 0.2 (weight ratio) 仏 里 里 比, adjust to adjust the position of the mouth of the raw material supply pipe 詈, between the crystal wafer The distance is imm~150mm. 吏/,舁 The single type of Sic is extracted in the air of Gaocheng should be woven (4) to replace the high frequency induction with the gas of high purity (argon). 16G (rc~2. In the range of C, d is rotated to make it. The rotation speed of the technique is adjusted to make the inert carrier gas (high-purity nitrogen velocity lOmm/sec). In the range of 〜5〇〇mm/sec, the raw material for the single crystal deposition is then placed on the surface of the SiC seed single crystal wafer which is finely disposed on the portion through the supply. Under such a situation, the outer temperature of the cylinder is kept constant, and the single crystal SiC is continuously used for manufacturing. The continuous supply of the raw materials is carried out until the single crystal Sic grows to a desired size and thickness, and the desired temperature is preferably a raw material for the production of a single crystal Sic by ambient gas pressure. The mixing ratio and the type of SiC single crystal wafer are appropriately selected. The results of producing single crystal SiC according to the above conditions are recorded in Table}. In order to check whether the single crystal SiC produced is polycrystalline or not The incorporation of siC, a thin layer sample of the fabricated single crystal SiC was observed and observed under a polarized light (crossnicol) by a transmission optical microscope. 17 200809019 [Table 1]

No· L (mm) S (mm/sec) L/S (sec) Whether or not polycrystalline SiC is mixed in ------- With or without microtube 1 Example 1 1 20 0.05 --~~-- Μ 2 Example 2 10 20 0.5 —----- , --~---_ 3 Example 3 30 20 1.5 Benefits —---- There are thousands of 4 Examples 4 60 20 3 /,,, — 有若千5 Comparative Example 1 80 20 4 Yes----. There are Xu吝6 Comparative Example 2 150 20 7.5 There are β mouth 1 y ^~&quot; ----- There are many 7 Examples 5 60 60 1 mouth 1 y -- ----- Benefit 8 Example 6 60 500 0.12 No, but the growth rate is reduced _ 9 Comparative Example 3 60 10 6 Yes — ;------~- Have Xu Dong 10 Example 7 30 10 3 No _ /7 y There are a few 11 Examples 8 10 5 2 None, but in the supply pipe ----- Blocking disk 12 Example 9 10 10 1 Benefit 13 Example 10 10 60 0.17 'None---- 14 Implementation Example 11 5 10 0.5 ~ —------__ Benefit m, fef 15 Example 12 1 10 0.1 No flaw, - 16 - Example 13 1 20 0.05 - Yi jfef 17 Example 14 80 60 1.33 1~ ----- No 4\^\ 18 Example 15 30 60 0.5 ----~~- Benefit _ W Shiding 19 Example 16 80 100 0.8 ---~~~- No 20 Example 17 80 2000.4 益—无—21 Example 18 80 500 0.16 ------ None, but the growth rate is reduced by the handle — None — — It can be confirmed from Table 1 that L/S (sec) is set to 3 or less. In the case of the single crystal SiC produced and reported, the incorporation of polycrystalline SiC does not occur, and high quality single crystal SiC is used. At $ 18 200809019, it can be confirmed that 'when the linear velocity is above 20 mm/sec.' The distance between the wafer and the raw material supply pipe discharge port is separated from the transport continent mm. In the manufactured single crystal Sic, 曰 = block If the linear velocity of the inert carrier gas is further = more U, the distance between the single crystal wafer and the raw material supply tube discharge port is further increased, and single crystal SiC can still be obtained. Knowing that if you adjust the line speed to 500 jobs/coffees, the number of ==, ίί is reduced. It is not ideal to increase the line speed to a specific speed. _ The lower part of the example is 0 m. It is confirmed that if the linear velocity of the inert carrier gas is more than 2 = m / Sec (four), it is necessary to make the Sic single crystal wafer and the raw material g should be connected to each other if the linear velocity is lowered too low. The raw material powder for the barrier production will cause blockage in the raw material supply pipe. Because of A, it is better to ensure that the linear velocity of the inert carrier gas is above 10 ^sec, if it is more safe for the sake of safety. Make sure that it is confirmed on the 2q side/coffee with its rii ί: if the sic species is single crystal The distance from the supply of the raw material [When the surface is below (9), the polycrystal can be avoided. If the distance between the SiC single crystal wafer and the raw material supply tube is 10 mm or less, it will not be Since a phenomenon of a microtube is generated, it is recognized that it is a better embodiment if the distance L between the SiC seed single crystal wafer and the raw material supply tube is 10 mm or less. When the linear velocity s of the inert carrier gas is 6 〇mm/sec or more, the generation of the microtubes can be avoided. Therefore, if the linear velocity S of the inert body is set to 60 mm/sec or more, it is a better state. Bay 19 200809019 The above results are summarized as follows: the distance between the single crystal of the sic species and the discharge port of the raw material supply pipe is preferably less than 60 mm, more preferably less than 1 mm; the linear velocity of the inert carrier gas is 2〇mm/sec or more, 2〇〇mm/sec or less, more preferably (10) or more, 200 mm/sec or less. As described above, the single crystal SiC manufacturing method of the present invention can be stably manufactured and provided. A high quality that inhibits the incorporation of polycrystalline SiC Single crystal SiC. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a diagram showing an example of a device for producing a single crystal siC of the present invention. [Description of main components] _ 1~胄_转 2~Cylinder 坩埚' 3~咼Frequency induction heating coil 4~SiC seed single crystal 5~ pedestal 6~ raw material supply pipe 7, ~ material storage tank 8, 8'~ regulating valve 9~ single crystal SiC layer (growth layer) _ 10~ opening part A~ Distance between carrier gas L~feedstock supply tube and single crystal of SiC species (mm), S~ linear velocity of carrier gas (mm/sec) 20

Claims (1)

200809019 X. Patent application scope: 1. The manufacturing method of U crystal Sic, which comprises: Sir:, ^f_nSlC single crystal susceptor and raw material for supplying single crystal material from the outside to be placed on the hang And (4) destroying the bribe of the ambient gas, the step of supplying the single-crystal SiC manufacturing raw SiC 'ϋί (4) - through the raw material supply pipe to grow the single junction; Further, when the distance between the raw material supply pipe and the SiC seed single crystal is set to 1, mm), and the linear velocity of the carrier gas is S (mm/sec), it satisfies L/S Csec) $3 conditions of. The method for producing a single crystal Sic according to the first aspect of the invention, wherein the raw material for producing the single-wafer SiC is cerium oxide particles and carbon particles. The method for producing single crystal SiC according to claim 1 or 2, wherein the distance between the raw material supply pipe and the single crystal of the SiC species is 6 mm or less. j. The method for producing a single crystal sic according to claim 1 or 2, wherein a distance between the bismuth raw material supply tube and the single crystal of the SiC species is equal to or less than i 〇 mm. The method for producing single crystal SiC according to claim 1 or 2, wherein the linear velocity of the carrier gas is 20 mm/sec or more and 200 mm/sec or less. The method for producing single crystal SiC according to claim 1 or 2, wherein the linear velocity of the carrier gas is 60 mni/sec or more and 200 mni/sec or less. 7. The method for producing single crystal SiC according to claim 1 or 2, wherein the carrier gas is argon. A single crystal SiC produced by the method for producing single crystal SiC according to any one of claims 1 to 7. 9. A single-crystal SiC manufacturing apparatus, characterized in that: 21 200809019 includes a susceptor provided in the crucible, and a SiC seed single crystal is fixed, and a raw material supply of a raw material for producing single crystal SiC is supplied from the outside. In addition, it is equipped with a distance adjusting device, the distance between the single crystals of the SiC species on the crucible; the carrier gas supply speed control device supplied by the raw material supply pipe is supplied by the 乂 即The speed of the line is used to control your pattern.