200806568 九、發明說明： 【發明所屬之技術領域】 本發明關於一種製造微機械構件的方法，該微機械構 件設有 -一膜 -一固定的板，它具有至少一個通過開口，及 -一空腔，它在膜與板之間形成，其中 該膜係在一基質上的一層構造中造成，其中板由基質 構造化做出，其中由構件後側開始在基質中產生一腔洞，' 其特徵在： 該腔洞的底構成板的後側且設有至少一遮罩層，該遮 罩成作構造化以產生該至少一通過開口，且然後將該基質 材料在通過開口的區域從板後側開始除去。 【先前技術】 微機械（Mikromechanik )使最小尺寸的麥克風能製造。 這些構件包含一膜片，它受聲波作用起振動並轉變成電信 號。在歐洲專利EP 1 441 561 A2中提到，如何在一種音 響活性的膜下方（它係設有格狀或網狀的貫通開口）產生 具有貫通開口的板。該板用於作對立電極，藉之用電容方 式將膜的振動檢出。另方面，該膜可經由板中的貫通開口 及構件後侧的腔洞從下方/後方通風。 依EP 1 441 561 A2中所述之第一方法變更例，先在 基質後側中產生一腔洞，俾使板後側露空。然後使基質上 方的層構造的膜上侧露空。在此，在膜中已產生貫通開口。 5 200806568 …、後將如上所構造化的膜 在此-、s时 u在板中產生貫通開口。 在此貝通開口的區域中的基質 方式…_ 叶符別用各向異性的蝕刻 万式除去，廷種蝕刻從構件 磕Λ竹 惻開始經由膜的貫通開口 達成。將膜上的遮罩層除去後， .^ 1 交在膜下方產生一空腔，苴 中板的上側露空。這點係用一 /、 牛鲈、杳々斗 门门险（uotrop)的蝕刻 達成，其中蝕刻同樣從 口達成。 干上側開始經由膜的貫通開200806568 IX. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing a micromechanical member provided with a film-a fixed plate having at least one through opening, and a cavity Formed between a membrane and a sheet, wherein the membrane is created in a layered configuration on a substrate, wherein the sheet is made from a matrix, wherein a cavity is created in the matrix from the back side of the member, 'characteristically The bottom of the cavity forms a rear side of the panel and is provided with at least one mask layer, the mask being configured to create the at least one through opening, and then the matrix material is removed from the panel in the region through the opening The side begins to remove. [Prior Art] Micromachinery (Mikromechanik) enables the manufacture of a microphone of the smallest size. These components contain a diaphragm that is vibrated by sound waves and converted into electrical signals. It is mentioned in the European patent EP 1 441 561 A2 how a plate with a through opening is produced underneath a sound-active membrane which is provided with a lattice or mesh-like through opening. The plate is used as a counter electrode to detect the vibration of the film by means of a capacitor. On the other hand, the film can be ventilated from below/rear through the through opening in the panel and the cavity on the rear side of the member. According to a first variant of the method described in EP 1 441 561 A2, a cavity is first created in the rear side of the substrate, so that the rear side of the plate is exposed. The upper side of the film of the layer construction above the substrate is then exposed. Here, a through opening has been created in the film. 5 200806568 ..., after the film structured as described above, at this time, s u creates a through opening in the plate. In the region of the Beton opening, the matrix method... _ leaves are removed by anisotropic etching, and the etching is achieved from the member through the through opening of the film. After the mask layer on the film is removed, a cavity is formed under the film, and the upper side of the plate is exposed. This is achieved by etching with a /, burdock, uotrop, where the etching is also achieved from the mouth. Dry upper side begins to open through the membrane
由於用於在板中產生書M ♦、s叫 生貝通開口的蝕刻作業係經由膜的 貝通開口達成，因此板中 极Τ的貝通開口的位置係與膜中的貫 通開口的網袼相連結。 依EP 1 441 561 A2中揭示的第二方法變更例，基質 的後側設有-第—遮罩層，它對應於所要產生的腔洞的排 肢幾何形狀作構造化。在此第一構造化的遮罩層上方施 一弟二遮罩層，它只在所要產生的腔洞的區域構造化，而 且係對應於板中的貫通開口的排列與幾何形狀，該板的後 側在產生腔洞時要露空。基f之所要遮罩的後側上此時作 -這各向異性的_。在此，首先只在所要產生的貫通開 的區域中將基質材料除去，直到第二遮罩層完全蝕刻掉 為止。然後也在所要產生的腔洞的剩餘區域中的基質材料 蝕J掉，一直到板的後側露出為止。基質後側作這種構造 化之後，在一道各向異性的蝕刻過程使膜的上侧露出，其 中也在膜中產生貫通開口，然後利用一種呈各向同性方式 作用的#刻媒’經由這些貫通開口將膜下方基質材料除 去。在此’板上側露出且已在板中構造化造成的貫通開孔 6 200806568 接到膜下方產生的空腔。 依此方法第二更例’腔洞與貫通開口係在板中在一道 二二各向異向的姓刻步驟產生，其中餘刻係從構件後側 開始知餘。為此所需之基質後側的遮罩作用較繁複，因為 遺-遮罩層須料㈣料形狀，它們須很準確地互相對 準。此外，該二遮罩層各有一定厚度，因為該在餘刻時產 生的凹隙的形狀 φ —不論在貫通開口的區域以及在腔洞的其餘區域 都只和遮罩層厚度及蝕刻的期間有關。此外，當 蝕刻較★久時，往往在蚀刻凹隙的邊緣區域會不規則，因此 该方法第二變更例在實用上有問題。 【發明内容】 本發明有鑑於此，旨在提供一種方法的變更方式，其 中貫通開口在板中的構造化作業與在膜中的一些貫通開口 係不相關地達成。此外依本發明的方法變更方式可使貫通 φ 開口準確地構造化，且容易實施。 這點依本發明達成之道係為： 邊腔洞的底構成板的後側且設有至少一遮罩層，該遮 罩成作構造化以產生該至少一通過開口，且然後將該基質 材料在通過開口的區域從板後側開始除去。 因此在板中的貫通開口，依本發明係從構件後側開始 產生，其中利用一點，即：後侧的構造化係與膜的製造無 關。與eP 1 441 561 A2所述的方法第二種變更方式不同， 依本發明，係將後侧的構造化而除材料，其方法係在第一 7 200806568 敍刻步驟只產生—腔洞，以使板後側露出，而在一個血此 不相關的第二蝕刻步驟中在板中產生貫通開口。在：情 形’腔洞不-定要用各向異性的蝕刻程序產生。其實第一 蝕刻步驟也可用各向同性的蝕刻程序。對於第二蝕刻步 驟，情形也如此。由於在選擇姓刻程序時比較自由，因此 本發明的方法很好整合到不同的製造程序中。此外，依本 發明將後側構造化作業除材料，使得板中的貫通開口㈣ 置、尺寸設計及幾何形狀有較大的自由。 又 依本發明的方法，該構件在第一兹刻步驟構造化的後 側須遮罩。因於腔洞—般延伸過基質厚度的一大部分。因 此遮罩層需施覆到位面差異較大的地形上，在這方面，如 果設-感光漆層當作遮罩層，則顯得特別有利，因為該2 光漆層可利用喷漆方式施到構件之構造化的後側上，特別 是也施到腔洞的底及側壁上。藉著喷漆法，連位面高低差 異很大的表面都能很均勻地施覆。 要作構造化，係先將如此所產生的感光漆層至少在腔 洞的底區域的部分曝光，為此宜使一投影曝光器。 後的顯影，特宜使用噴漢顯影方法，因為如此，顯影齊二 很好地施入腔洞中。 、 如上述’基質材料可在貫通開口的區域中用各向显性 的姓刻步驟〔例如制濠溝（Treneh)〕除㈣用_ 性钕刻步驟，只要_係從板之露出的後側開始的話。 板的上側宜用一道各向同性的蝕性使之露出， 板上方的基質除去。此外也產生板與膜之間的空腔:如果 8 200806568 1前側加卫的範圍，錢刻從構件上側開始經由膜中的相 3開口達成’則該空腔也可在構造化做出貫通開口前在板 產生。在此情形’貫通開口就不須特別保護以防止各向 同性的钕刻侵餘以及如此造成之擴充。如不採此方式，蚀 刻作業也可從構件後側開始經由板中的貫通開口達成。這 種方式，特別是當板中的貫通開口與膜及板間的空腔—齊 能在一道共同程序產生（亦即在一設備中產生），則顯得 特別有利。如此可使製造程序的時間大大節省，且使構件 製造成本降低（且由於設備作較佳利用之故）。 如上述，有種種不同的可能方式將本發明㈣示用有 利方式實施及作進一步改良。為此，一方面可見申請專利 範圍第1 $後的附屬$，以及以下配合圖式之本發明二個 實施例的說明。 【實施方式】 圖la中顯示一 CM0S晶圓（1〇)，它要用本發明的方法 φ 作構造化，該CMOS晶圓（10)包含一矽基質（1)，一種層構 造（2)〔它由數個金屬層及介電層構成〕，此處除了該格狀 設計的金屬層外，這些層不詳示，在金屬層（3)與基質〇)間 有一介電層（4)，利用它將金屬層（3)與基質〇)作電絕緣。 圖lb顯示在後側設以一漆光罩及/或氧化物光罩 以造一深壕溝後，該CMOS晶圓（1〇)的情形。在此各向異 向的蝕刻步驟，在基質（1)後側中產生一腔洞（6)，它只延伸 過基質（1)厚度的一部分。因此腔洞（6)的底構成一板（7)的 後側’该腔洞在本發明的範疇係要從基質（丨）構造化做出 9 200806568 來0 為此’將基質（1)後側設一感光漆層（8)，它也延伸過腔 洞（6)的底與側壁的範圍。為此使用一喷漆程序。因為如此， 即使在腔洞（6)的底區域也可均勻施覆。如圖1 ^所示，在 腔洞（6)的底區域的感光漆層（8)作構造化，俾在隨後的一各 向異性的蝕刻步驟〔從基質（1)後側開始〕在板（7)中產生貫 通開口（9)。要作構造化，先將感光漆層曝光。一投影感 光器特別適合在腔洞（6)的底區域曝光，然後將感光漆（8)顯 影’其中宜用一噴灑顯影劑，因為這種顯影劑連腔洞（6)的 '/米處都能侵餘到。 圖Id顯示CMOS晶圓（10)，這是在感光漆層（8)的構 造已轉到板（7)上以後且該基質材料在貫通開口（9)的區域用 一挖壕溝器（Trencher )從板（7)後側起除去以後的情形。 此外，光敏漆層從腔洞（6)的壁除去。 在此處的實施例，此時從CM0S晶圓（1〇)上側開始作 蝕刻步驟，這點在圖le中用箭頭表示。在此，在腔洞（6) 的區域，金屬層（3)外露，它構成一格狀膜（11)的最上層。 此外，貫通開口（13)在此膜（π)中產生。 最後在一道各向同性蝕刻步驟中產生一空腔（〗2)，其 方法係將膜（11)與板（7)之間的區域將基質材料除去。在此， 一方面使膜（11)的下侧及板（7)上側露出。另一方面，腔洞（6) 經貫通開口（9)接到空腔（12)。圖1(f)顯示此各向同性蝕刻 步驟後的CMOS晶圓（10)，此蝕刻可從上方經由膜（11)的 格構造中的貫通開口（13)達成，也可從基質後側開始經腔 200806568 洞（6)與貫通開口（9)達成。 以下利用圖2a〜2c說明圖ia〜if所示之方法的一變 更例。Since the etching operation for creating the book M ♦ and s the raw Beton opening in the board is achieved through the Beton opening of the film, the position of the extremely open Betom opening in the plate is the same as the opening of the through opening in the film. link. According to a second variant of the method disclosed in EP 1 441 561 A2, the rear side of the substrate is provided with a --mask layer which is structured corresponding to the geometry of the limbs of the cavity to be produced. A second mask layer is applied over the first structured mask layer, which is only structured in the region of the cavity to be created, and corresponds to the arrangement and geometry of the through openings in the panel, the rear side of the panel Be exposed when creating a cavity. The back side of the base f is to be masked at this time - this anisotropic _. Here, the matrix material is first removed only in the region of the through-opening to be produced until the second mask layer is completely etched away. The matrix material in the remaining area of the cavity to be created is then etched away until the back side of the plate is exposed. After the structuring of the back side of the substrate, the upper side of the film is exposed in an anisotropic etching process, wherein a through opening is also created in the film, and then through an isotropic manner The through opening removes the matrix material below the film. The through opening 6 200806568, which is exposed on the side of the plate and has been structured in the plate, is connected to the cavity created below the film. According to the second embodiment of the method, the cavity and the through opening are generated in the plate in a two-two anisotropic process, wherein the residual is from the rear side of the member. The masking effect on the back side of the substrate required for this is complicated, since the mask-layer layer material (4) material shape must be accurately aligned with each other. In addition, the two mask layers each have a certain thickness because the shape of the recess φ generated during the remaining time - regardless of the area of the through opening and the remaining area of the cavity, only the thickness of the mask layer and the etching period related. Further, when the etching is longer than the second, the edge region of the etching recess tends to be irregular, so the second modification of the method is problematic in practical use. SUMMARY OF THE INVENTION The present invention has been made in view of the above, and it is an object of the present invention to provide a modification of the method in which the structuring operation of the through opening in the panel is achieved irrespective of some through openings in the film. Further, according to the method of the present invention, the through φ opening can be accurately constructed and easily implemented. This is achieved according to the invention: the bottom of the cavity forms the rear side of the panel and is provided with at least one mask layer, the mask being configured to create the at least one through opening, and then the substrate The material is removed from the back side of the panel in the area through the opening. Thus, the through opening in the panel is produced from the rear side of the member in accordance with the present invention, wherein the point of use, i.e., the structuring of the back side, is independent of the manufacture of the film. Different from the second modification of the method described in eP 1 441 561 A2, according to the present invention, the material of the rear side is structured to remove the material, and the method is only to generate a cavity in the first 7 200806568 elaboration step. The back side of the panel is exposed, and a through opening is created in the panel in a second etching step that is unrelated to blood. In the case of the case, the cavity is not determined to be produced by an anisotropic etching process. In fact, the first etching step can also be an isotropic etching process. The same is true for the second etching step. The method of the present invention is well integrated into different manufacturing processes because of the relative freedom in selecting a surname program. Further, according to the present invention, the material for the rear side structuring operation is removed, so that the through opening (four), size design, and geometry of the plate are largely free. Further in accordance with the method of the present invention, the member is masked on the back side of the first structured step. Because of the cavity, it extends over a large part of the thickness of the substrate. Therefore, the mask layer needs to be applied to the terrain with a large difference in the plane of the plane. In this respect, it is particularly advantageous if the photosensitive layer is used as the mask layer, because the 2 paint layer can be applied to the component by painting. The structured rear side, in particular also applied to the bottom and side walls of the cavity. By the painting method, the surface with a large difference in the height of the plane can be uniformly applied. To be structured, the photosensitive lacquer layer thus produced is exposed at least in the portion of the bottom region of the cavity, for which purpose a projection exposer is preferred. After the development, it is preferable to use a spray development method, because the development is well applied to the cavity. For example, the above-mentioned 'matrix material can be removed in the region of the through-opening by an explicit dominant step (for example, Treneh), except for (4) using the _-scratch step, as long as the _ is from the back side of the plate The beginning. The upper side of the plate should be exposed by an isotropic etch, and the substrate above the plate is removed. In addition, a cavity between the plate and the membrane is also produced: if the range of the front side of the 200806568568 1 is reinforced, the money is drawn from the upper side of the component through the phase 3 opening in the film, and the cavity can also be made through the opening. The front is produced on the board. In this case, the through opening does not require special protection to prevent isotropic engraving and the resulting expansion. If this is not the case, the etching operation can also be achieved from the rear side of the member via the through opening in the plate. This approach, particularly when the through opening in the panel and the cavity between the membrane and the panel are produced in a common process (i.e., produced in a device), is particularly advantageous. This results in significant time savings in manufacturing procedures and reduced component manufacturing costs (and due to better equipment utilization). As described above, there are various possible ways in which the invention (4) is advantageously carried out and further improved. To this end, on the one hand, it is possible to see the subsidiary $ after the first application of the patent range, and the following description of the two embodiments of the invention in conjunction with the drawings. [Embodiment] FIG. 1A shows a CMOS wafer (1 〇) which is structured by the method φ of the present invention. The CMOS wafer (10) comprises a ruthenium substrate (1), a layer structure (2). [It consists of several metal layers and dielectric layers], except for the metal layer of the lattice design, these layers are not shown in detail, and there is a dielectric layer (4) between the metal layer (3) and the substrate layer). It is used to electrically insulate the metal layer (3) from the matrix layer). Figure lb shows the CMOS wafer (1 〇) after a reticle and/or oxide mask is placed on the back side to create a deep trench. In this anisotropic etching step, a cavity (6) is created in the back side of the substrate (1) which extends only over a portion of the thickness of the substrate (1). Thus the bottom of the cavity (6) constitutes the back side of a plate (7) which is in the context of the invention to be made from the matrix (丨) to make 9 200806568 to 0 for this 'substrate (1) A lacquer layer (8) is provided on the side, which also extends over the range of the bottom and side walls of the cavity (6). A painting procedure is used for this purpose. Because of this, even in the bottom region of the cavity (6), it can be uniformly applied. As shown in Fig. 1^, the lacquer layer (8) in the bottom region of the cavity (6) is structured, and the subsequent anisotropic etching step [starting from the back side of the substrate (1)] is on the plate. A through opening (9) is formed in (7). To be structured, first expose the lacquer layer. A projection photoreceptor is particularly suitable for exposure in the bottom region of the cavity (6), and then the photographic paint (8) is developed. It is preferred to use a spray developer because the developer is connected to the cavity (6) at a distance of / Can invade. Figure Id shows a CMOS wafer (10) after the construction of the photographic lacquer layer (8) has been transferred to the plate (7) and the substrate material is in the region of the through opening (9) with a trencher (Trencher) The latter case is removed from the rear side of the plate (7). Furthermore, the photosensitive lacquer layer is removed from the walls of the cavity (6). In the embodiment herein, an etching step is performed from the upper side of the CMOS wafer (1 〇), which is indicated by an arrow in Fig. Here, in the region of the cavity (6), the metal layer (3) is exposed, which constitutes the uppermost layer of a lattice film (11). Furthermore, a through opening (13) is produced in this film (π). Finally, a cavity (?2) is created in an isotropic etching step by removing the matrix material from the area between the film (11) and the plate (7). Here, on the one hand, the lower side of the film (11) and the upper side of the plate (7) are exposed. On the other hand, the cavity (6) is connected to the cavity (12) through the through opening (9). Figure 1 (f) shows the CMOS wafer (10) after this isotropic etching step, which can be achieved from the top through the through opening (13) in the lattice structure of the film (11), or from the back side of the substrate The hole (6) through the cavity 200806568 is achieved with the through opening (9). A modification of the method shown in Figs. 1a to 1f will be described below using Figs. 2a to 2c.
此方法變更例也從一如圖la所示的CMOS晶圓（2〇)著 手。與圖lb相似，此處首先也將基質後側遮罩，以在基 質（1)後侧中產生一腔洞（6)，且因此使板（7)的後側露出。 在此處要再次注意，該基質可在腔洞（6)區域用各向異性及 各向同性的蝕刻程序除去。如圖lc所示，該基質〇)此時 已造化的後侧再遮罩，而且特別是在腔洞（6)的底區域，在 該處要產生板（7)中的貫通開口（9)。 與前面配合圖la〜lf所示的方法實施例不同者，此處 貫通開Π (9)的構造化作業連同在板上⑺形成__空腔（12)的 作業在一道程序步驟達成，此步驟在一挖壕溝器 (TrenCher)中實施。首先將貫通開口⑼做成淺壕溝 (FlaChtrenCh )形式，因此係在一道各向異性餘刻程序中。 然而’隨後在壕溝器中就用各向同性方式實施。在此也將 層構造⑺與板⑺之間的區域的基質材料除去。圖&顯示 在此程序步驟後的CM0S晶圓(2〇)。特別是圖2&的詳细圖 顯示：除了板⑺上的貫通開口⑼及空腔(12)外， ⑺中也產生-可自由運動的膜（21)。依此，在此程序步驟 後已可使用圖2a所示的構件，例如當作絕 相對壓力感測器。 ^ ~ ^This method change example also starts with a CMOS wafer (2〇) as shown in FIG. Similar to Figure lb, the back side of the substrate is first masked here to create a cavity (6) in the back side of the substrate (1) and thus expose the back side of the plate (7). It is again noted here that the substrate can be removed in the cavity (6) region by an anisotropic and isotropic etching procedure. As shown in Figure lc, the substrate 再) has been re-masked on the back side of the cavity, and in particular in the bottom region of the cavity (6) where a through opening (9) in the plate (7) is to be produced. . Different from the method embodiment shown in the previous figures la to lf, the structuring operation through the opening (9) and the operation of forming the __cavity (12) on the board (7) are achieved in one program step. The steps are carried out in a trencher (TrenCher). The through opening (9) is first formed in the form of a shallow trench (FlaChtrenCh) and is therefore in an anisotropic residual procedure. However, it was subsequently implemented in an isotropic manner in the cleaver. The matrix material of the region between the layer structure (7) and the plate (7) is also removed here. Figure & shows the CMOS wafer (2〇) after this program step. In particular, the detailed view of Fig. 2 & shows that in addition to the through opening (9) and the cavity (12) in the plate (7), a freely movable film (21) is also produced in (7). Accordingly, the components shown in Figure 2a can be used after this procedure step, for example as an absolute pressure sensor. ^ ~ ^
圖 CMOS 2b顯示在膜（21)中產生壓力平衡開 晶圓（20)的上視圖。此處所示之構件， ϋ (22)後的 舉例而言可 11 200806568 當作麥克風使用。 圖2c大致相當於圖If，且顯示圖2a所示之CMOS晶 圓（2〇)，這是在膜（21)上側露出以後的情形，為此將膜（21) 上方的介電層在一道乾蝕刻程序（從構件上侧開始）除去。 【圖式簡單說明】 圖1 a〜 械構件， 1 f係在本發 明製造方法的個別階段的一 種微機Figure CMOS 2b shows a top view of the pressure balanced open wafer (20) created in the film (21). The components shown here, ϋ (22), can be used as a microphone for example. Figure 2c is roughly equivalent to Figure If, and shows the CMOS wafer (2〇) shown in Figure 2a, which is the case after the upper side of the film (21) is exposed, for which the dielectric layer above the film (21) is The dry etching process (starting from the upper side of the component) is removed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 a ~ Mechanical component, 1 f is a microcomputer at an individual stage of the manufacturing method of the present invention
圖2a〜2c係圖 實施例。 1 a 〜if 所示方法 的一種本發明 方法的 【主要元件符號說明】 (1) 矽基質 (2) 層構造 (3) 金屬層 (4) 介電@ (5) 光罩Figures 2a to 2c are diagrams of an embodiment. 1 a ~ If the method of the invention is a method of the main method [1] 矽 matrix (2) layer structure (3) metal layer (4) dielectric @ (5) mask
(6) 腔洞 (7) 板 (8) 感光漆層 (9) 貫通開口 (10) 晶圓 (11) 膜 (12) 空腔 (13) 貫通開口 (20) 晶圓 12 200806568 (21) 膜 (22) 壓力平衡開口(6) Cavity (7) Plate (8) Photosensitive paint layer (9) Through opening (10) Wafer (11) Film (12) Cavity (13) Through opening (20) Wafer 12 200806568 (21) Membrane (22) Pressure balance opening