TW200826717A - Electrostatic pressure transducer and manufacturing method therefor - Google Patents
Electrostatic pressure transducer and manufacturing method therefor Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/01—Electrostatic transducers characterised by the use of electrets
- H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
Description
200826717 九、發明說明: 【發明所屬之技術領域】 — 轉明係關於靜電式壓力轉換器,例如適用於MEMS(微 機電系統)之電容式麥克風。本發明還關於靜電式壓力轉 換器之製造方法。 - 此申請案主張曰本專利申請案第2006-281889及曰本專 利申請案第2〇〇7_81423號之優先權’其内容係以引用方式 併入本文。 ^ ! 【先前技術】 傳統上均瞭解,靜電式壓力轉換器(特別係電容式麥克 風)一直藉助MEMS(微機電系統)製程來加以製造。曰本專 利申請公告案第2004-506394號教導一種用作電容式麥克 風之微型寬頻轉換器。此電容式麥克風包括一形成一固定 電極之平板與一形成一振動電極之隔膜,其均近接一基板 (或一接合一晶粒之佈線部分)而定位。可採用一第一結 y 構,其中係該隔膜靠近該佈線部分定位而非該平板,或者 一第一結構,其中係該平板靠近該佈線部分定位而非該隔 ^ 冑。在該等第—及第二結構之各結構中,該隔膜用作-隔 • =,用於分割一相對於該佈線部分而定位之聲學空間與一 靠近該佈線部分而定位之非聲學空間。此外,在該平板内 形成複數個孔。在其中係該隔膜靠近該佈線部分定位而非 、’板之第…構中,藉由近接該佈線部分之隔膜來形成 #腔。在其中係該平板靠近該佈線部分定位而非該隔膜之 第一、、、σ構中,藉由近接該佈線部分之平板來形成一腔。當 124466.doc 200826717 -靜態壓力差出現於該聲學空間與該非聲學空間之間時, 该電容式麥克風靈敏度會劣化。為了避免劣化靈敏度,必 需形成-通道,其在該非聲學空間之空氣壓力與大氣壓力 之間建立一平衡。 . /而’當聲波經由連接於該聲學空間與該非聲學空間 (藉由使用該隔臈來分割)之間的通道進入該非聲學空間 . 肖’該電容式麥克風靈敏度會劣化。難以增加該通道之聲 f ?且,以便處理低頻範圍聲波,換言之,難以減小該通道之 寬度(或斷面大小)。由此,傳統習知的電容式麥克風各具 有在低頻範圍内靈敏度劣化之頻率特性。 此外,已知矽麥克風(或矽電容式麥克風)作為小型靜電 式轉換器之範例,其係藉助半導體製程來產生的。在曰本 專利申請公告案第2004-506394號所揭示之微型寬頻轉換 器(其用作一靜電式壓力轉換器)中,一對相對定位的電極 係藉由一具有一相對較高剛性之電極板與一具有一相對較 Q 低剛性之隔膜來實現,其中由於一偏壓電壓所引起之一電 場,將該隔膜吸引至該電極板時,在該電極板與該隔臈之 . 間的間隙會減小,但在該隔膜接觸該電極板之突出物時, ^ 維持該間隙。此類靜電式壓力轉換器具有下列問題。 石夕麥克風之鼓敏度隨著該電極板與該隔膜之間的距離減 小而得到改良。然而,可能出現一引入現象,其中受到壓 力的隔膜會偏斜並在施加一偏壓電壓時被吸引至電極板。 此劣化隔膜針對其機械振動之穩定性,且此減小隔膜之額 定壓力。當隔膜被吸引至電極板時,在隔膜與基板之間的 124466.doc 200826717 距離會增加,以致減小與基板後腔相通之空間之聲阻,從 而減小在低頻範圍内的靈敏度。 【發明内容】 本發明之一目標係提供一種靜電式壓力轉換器,例如一 _ 電容式麥克風,其中改良低頻範圍聲波有關之靈敏度,以 便實現平坦的靈敏度特性。 本發明之另一目標係提供一種靜電式壓力轉換器之製造 方法。 … f) 本發明之另一目標係相對於該靜電式壓力轉換器,在穩 定性與靈敏度之間實現一高位準平衡。 在本發明之一第一方面,一種靜電式壓力轉換器(例如 電各式麥克風)包括:一平板,其具有複數個孔並形成 固疋電極,一隔膜,其形成一振動電極,與該固定電極 相對定位;至少一間隔物,其係在該隔膜之周邊端部向内 在一環狀區域内定位於該平板與該隔膜之間;及一檔板, I) 其具有一開口,係相對於該隔膜位於該平板對面,其中由 於在該平板與該隔膜之間出現的靜電吸引,該隔膜以一方 _ 式相對於該平板而振動,使得在該間隔物内部定位的該隔 • 膜之内部部分接近該平板移動,而在該間隔物外部定位的 泫隔膜之外部部分相對於該平板移動,以致於該隔膜之周 邊端部部分接觸該檔板之開口邊緣。 車乂佳的係盡可能大地增加允許該隔膜振動之空間,且較 佳的係在寬度上減小連接於該隔膜所分割的該聲學空間與 該非聲學空間之間的通道。在該電容式麥克風中,連接於 124466.doc 200826717 =學空間與該非聲學空間之間的通道係❹在該隔膜與 该檔板之間的空間來形成。200826717 IX. Description of the invention: [Technical field to which the invention pertains] - The invention relates to an electrostatic pressure transducer, such as a condenser microphone suitable for MEMS (Micro Electro Mechanical Systems). The present invention also relates to a method of manufacturing an electrostatic pressure transducer. - This application claims priority to the present patent application No. 2006-281889, the entire disclosure of which is hereby incorporated by reference. ^ [Prior Art] It is traditionally known that electrostatic pressure transducers (especially capacitive microphones) have been manufactured using MEMS (Micro Electro Mechanical Systems) processes. A micro-broadband converter for use as a capacitive microphone is taught in Japanese Patent Application Publication No. 2004-506394. The condenser microphone includes a flat plate forming a fixed electrode and a diaphragm forming a vibrating electrode, each of which is positioned adjacent to a substrate (or a wiring portion joining a die). A first junction structure may be employed in which the diaphragm is positioned adjacent to the wiring portion instead of the flat plate, or a first structure in which the flat plate is positioned adjacent to the wiring portion instead of the spacer. In each of the first and second structures, the diaphragm is used as a spacer to divide an acoustic space positioned relative to the wiring portion and a non-acoustic space positioned adjacent to the wiring portion. In addition, a plurality of holes are formed in the plate. In the configuration in which the diaphragm is positioned adjacent to the wiring portion instead of the "plate", the # cavity is formed by the diaphragm adjacent to the wiring portion. In the first, sigma configuration in which the flat plate is positioned adjacent to the wiring portion instead of the diaphragm, a cavity is formed by the flat plate adjacent to the wiring portion. When 124648.doc 200826717 - Static pressure difference occurs between the acoustic space and the non-acoustic space, the sensitivity of the condenser microphone may deteriorate. In order to avoid deterioration sensitivity, it is necessary to form a channel which establishes a balance between the air pressure in the non-acoustic space and the atmospheric pressure. / / When the sound wave enters the non-acoustic space via a channel connected between the acoustic space and the non-acoustic space (by dividing the barrier), the sensitivity of the condenser microphone may deteriorate. It is difficult to increase the sound of the channel f and, in order to deal with low frequency range sound waves, in other words, it is difficult to reduce the width (or section size) of the channel. Thus, conventional conventional condenser microphones each have a frequency characteristic in which sensitivity is deteriorated in a low frequency range. Further, a chirped microphone (or a tantalum condenser microphone) is known as an example of a small electrostatic converter which is produced by means of a semiconductor process. In the miniature broadband converter disclosed in Japanese Patent Application Publication No. 2004-506394, which is used as an electrostatic pressure transducer, a pair of relatively positioned electrodes are provided by an electrode having a relatively high rigidity. The plate is realized with a diaphragm having a relatively low Q rigidity, wherein an electric field caused by a bias voltage attracts the diaphragm to the electrode plate, and a gap between the electrode plate and the spacer It will decrease, but the gap will be maintained when the diaphragm contacts the protrusion of the electrode plate. Such electrostatic pressure transducers have the following problems. The drum sensitivity of the Shixi microphone is improved as the distance between the electrode plate and the diaphragm is reduced. However, an introduction phenomenon may occur in which the pressure-receiving diaphragm is deflected and attracted to the electrode plate when a bias voltage is applied. This degraded diaphragm is stable against its mechanical vibration and this reduces the nominal pressure of the diaphragm. When the diaphragm is attracted to the electrode plate, the distance between the diaphragm and the substrate increases, so that the acoustic resistance of the space in communication with the back cavity of the substrate is reduced, thereby reducing the sensitivity in the low frequency range. SUMMARY OF THE INVENTION One object of the present invention is to provide an electrostatic pressure transducer, such as a condenser microphone, in which the sensitivity associated with sound waves in a low frequency range is improved to achieve flat sensitivity characteristics. Another object of the present invention is to provide a method of manufacturing an electrostatic pressure transducer. f) Another object of the invention is to achieve a high level of balance between stability and sensitivity with respect to the electrostatic pressure transducer. In a first aspect of the invention, an electrostatic pressure transducer (eg, an electric microphone) includes: a flat plate having a plurality of holes and forming a solid electrode, a diaphragm forming a vibrating electrode, and the fixing Positioning the electrodes relative to each other; at least one spacer positioned between the flat plate and the diaphragm in an annular region inwardly at a peripheral end of the diaphragm; and a baffle, I) having an opening relative to the a diaphragm is located opposite the plate, wherein the diaphragm vibrates in a side with respect to the plate due to electrostatic attraction occurring between the plate and the diaphragm such that an inner portion of the diaphragm positioned within the spacer is approximated The plate moves while the outer portion of the diaphragm positioned outside the spacer moves relative to the plate such that the peripheral end portion of the diaphragm contacts the open edge of the baffle. The rut is to increase the space that allows the diaphragm to vibrate as much as possible, and the preferred system reduces the width of the passage between the acoustic space divided by the diaphragm and the non-acoustic space. In the condenser microphone, it is connected to 124466.doc 200826717 = the channel between the learning space and the non-acoustic space is formed in the space between the diaphragm and the baffle.
當該電容式麥克風採用其中係該隔膜定位於該平板與該 基板㈣-石夕晶圓來形成)之間的第一結構時,該基板用 作该核板。在施加一偏_時,由於在該平板與該隔膜 之間出現的靜電吸引,將該隔膜吸引至該平板,以致部分 接觸該間隔物,其中該隔狀周邊端部部分接觸該檔板之 開口邊緣,因而即便在寬度上減小連接於該聲學空間盘該 非聲學^間之間的通道時,仍允許該隔膜振動。此增加連 接於該聲學空間與該非聲學空間之間的通道之聲阻;且此 使低頻範圍聲波難以穿過該通道。即,可防止由於聲波意 外進入該隔膜所界定之非聲學空間内而劣化該電容式麥克 風之靈敏度。可修改該電容式麥克風,使得該隔膜之整體 周邊接觸用作構板之基板開口邊緣。在此修改例中,較佳 的係在一適當位置形成一較小間隙,以便在該非聲學空間 之空氣壓力與大氣壓力之間建立一平衡。 S然,可重新設計該電容式麥克風,以採用其中係該平 板定位於該隔膜與該基板(使用矽晶圓形成)之間的第二結 構。在此結構中,係該檔板遠離該佈線部分定位而非該隔 膜。該佈線部分係一形成一囊封該靜電式壓力轉換器之封 裝之基底部分的多層佈線基板,或其對應於一嵌入一鉛框 内之封裝之基底部分。當該電容式麥克風晶粒直接接合一 用於固定其他電子組件之電路板時,該佈線部分對應於該 電路板。在施加一偏壓電壓時,由於在該平板與該隔膜之 124466.doc 200826717 間出現的靜電吸引,將該隔膜吸引至該平板,以致部分接 觸該間隔物,其中該隔膜之周邊端部部分接觸該權板之開 口邊緣,從而即便在寬度上減小連接於該聲學空間與該非 聲學空間之間的通道時’仍允許該隔膜振動。此增加連接 於該聲學空間與該非聲學空間之間的通道之聲阻;且此使 低頻範圍聲波難以穿過該通道。即,可防止由於聲波意外 進入該隔膜所界定之非聲學空間内而劣化該電容式麥克風 之靈敏度。When the condenser microphone adopts a first structure in which the diaphragm is positioned between the flat plate and the substrate (four)-stone wafer, the substrate serves as the core plate. When an offset _ is applied, the diaphragm is attracted to the flat plate due to electrostatic attraction occurring between the flat plate and the diaphragm so as to partially contact the spacer, wherein the partition peripheral end portion contacts the opening of the baffle The edge, thus allowing the diaphragm to vibrate even when the width is reduced by the passage between the non-acoustic spaces of the acoustic space disk. This increases the acoustic impedance of the channel connected between the acoustic space and the non-acoustic space; and this makes it difficult for sound waves in the low frequency range to pass through the channel. That is, the sensitivity of the capacitive microphone can be prevented from deteriorating due to the acoustic wave entering the non-acoustic space defined by the diaphragm. The condenser microphone can be modified such that the entire perimeter of the diaphragm contacts the edge of the substrate opening that serves as a slab. In this modification, it is preferred to form a small gap at an appropriate position to establish a balance between the air pressure of the non-acoustic space and atmospheric pressure. Alternatively, the condenser microphone can be redesigned to employ a second structure in which the plate is positioned between the diaphragm and the substrate (formed using a germanium wafer). In this configuration, the baffle is positioned away from the wiring portion instead of the diaphragm. The wiring portion is formed as a multilayer wiring substrate enclosing a packaged base portion of the electrostatic pressure transducer, or a portion corresponding to a base portion of a package embedded in a lead frame. When the condenser microphone die is directly bonded to a circuit board for fixing other electronic components, the wiring portion corresponds to the circuit board. When a bias voltage is applied, the diaphragm is attracted to the plate due to electrostatic attraction occurring between the plate and the diaphragm 124466.doc 200826717, so that the spacer is partially contacted, wherein the peripheral end portion of the diaphragm is in contact The opening edge of the weight plate, thereby allowing the diaphragm to vibrate even when the width is reduced in connection with the passage between the acoustic space and the non-acoustic space. This increases the acoustic resistance of the channel connected between the acoustic space and the non-acoustic space; and this makes it difficult for sound waves in the low frequency range to pass through the channel. That is, the sensitivity of the condenser microphone can be prevented from being deteriorated due to accidental entry of sound waves into the non-acoustic space defined by the diaphragm.
即,可使該電容式轉換器具有平坦頻率特性而不劣化低 頻範圍内的靈敏度。 不施加該偏壓電壓時,該非聲學空間不以一氣密方式封 閉;因此,可在該電容式麥克風内在該非聲學空間之空氣 壓力與大氣壓力之間建立-平衡。此可靠地防止由於在該 聲學空間與該非聲學空間之間出現的空氣壓力差而意外毀 壞該隔膜;因&,可防止由於空氣壓力差而劣化該電容式 麥克風之靈敏度。 . 種靜電式壓力轉換器(例如一電容式麥克風)包 括:-平板’其具有複數個孔並形成—以電極;一隔 膜’其形成-振動電極,係相對於該固定電極而定位;至 、,1隔物彡係定位於該平板與該隔膜之間並具有在該 平板之該等孔内的最外部孔外部定位的-環狀内壁;及一 支撑該平板之周邊端部,以便與該隔膜、該平板及 2ΓΓ—起環繞由近接—佈線部分之隔膜所界定之一 予工間,其中該隔臈以一方式相對於該平板而振動, 124466.doc -10- 200826717 使得由於在該平板與該隔膜之間出現的靜電吸引’該隔膜 接近該平板而移動,以便封閉該間隔物所環繞之一開口並 以一氣後方式實質封閉該非聲學空間。That is, the capacitive converter can be made to have flat frequency characteristics without deteriorating sensitivity in the low frequency range. When the bias voltage is not applied, the non-acoustic space is not sealed in a gastight manner; therefore, a balance can be established between the air pressure of the non-acoustic space and the atmospheric pressure within the condenser microphone. This reliably prevents the diaphragm from being accidentally destroyed due to the difference in air pressure occurring between the acoustic space and the non-acoustic space; because &, the sensitivity of the condenser microphone can be prevented from being deteriorated due to the difference in air pressure. An electrostatic pressure transducer (eg, a condenser microphone) includes: a plate having a plurality of holes and formed with an electrode; and a diaphragm 'forming a vibrating electrode positioned relative to the fixed electrode; a spacer 定位 is positioned between the plate and the diaphragm and has an annular inner wall positioned outside the outermost hole in the holes of the plate; and a peripheral end portion supporting the plate to a diaphragm, the plate, and one of the two chambers defined by the diaphragm of the proximity-wiring portion, wherein the barrier vibrates in a manner relative to the panel, 124466.doc -10- 200826717 due to the The electrostatic attraction that occurs between the diaphragm and the diaphragm moves closer to the plate to enclose an opening around the spacer and substantially enclose the non-acoustic space in a post-gassing manner.
在上述中,在施加一偏壓電壓時’由於在該平板與該隔 膜之間所出現的靜電吸引,將該隔膜吸引至該平板,從而 以-氣密方式封閉該非聲學空間。此防止聲波意外進入該 非聲學空間内;因此可防止劣化該電容式麥克風之靈敏 度。換言之,可使該電容式轉換器具有平坦頻率特性而不 劣化低頻範圍内的靈敏度。該間隔物之内壁係實質上形成 -環狀形狀中較佳的係在該空間之環狀内壁内形成一 較小間隙,以便減小截止頻率以低於音訊頻率範圍。簡言 之,該間隔物之内壁可採用一完美環狀或一不完美環狀^ 形成’該不完美環狀包括—較小間隙’其允許截止頻率低 於音訊頻率範圍或靠近音訊頻率範圍下限頻率。當該間隔 物之内壁係以理想環狀形成時,較佳的係可在除該間隔物 外的一規定位置處形成一額外間隙,以便在該聲學空間之 空氣壓力與大氣壓力之間建立一平衡。 該佈線部分係-形成一囊封該靜電式壓力轉換器之封裝 之基底部分的多層佈線基板,或其對應於一嵌入一鉛~ 之封裝之基底部分。當該電容式麥克風之晶粒直接接合一 用於固定電子組件之電路板時,該佈線部分對隸㈣路 板0 一氣密方式封 大氣壓力之間 不施加該偏壓電壓時,該非聲學空間不以 閉;因此,可在該非聲學空間之空氣壓力與 124466.doc 200826717 建立一平衡。此防止該隔膜由於該空氣壓力差而意外毀 壞,因而,可防止由於該空氣壓力差而劣化該電容式麥克 風之靈敏度。 隨便提及,該等前述靜電壓力轉換器之各轉換器可進一 Y I括互連至4隔膜之複數個彈簧、及一支撐件,其係互 連至該等彈簧,使得該隔膜橫跨該支撐件。一般而言,薄 膜在其形成製程期間不可避免地具有内部應力。在該電容 式麥克風中,該隔膜(其係一薄膜)係經由該等彈簧而橫跨 該支撐件而橋接;因此,該隔膜之應力係藉由該等彈簧來 釋放,而該隔膜之張力(其係該隔膜之應力反應)係也由該 等彈黃來釋放。由此,可增加該隔膜之振幅,並可改良該 電容式麥克風之靈敏度。 在一種適用於依據本發明之第一方面之靜電壓力感測器 之製造方法中,形成一第一膜,其係用作該隔膜;在該第 一膜上形成一第一絕緣膜;在該第一絕緣膜上形成一第二 膜,其係用作該平板;藉助光阻圖案化及蝕刻,在該第一 絕緣膜内形成至少-孔;在該孔内部沈積一第二絕緣膜, 其成分不同於該第一絕緣膜之成分,以便形成由該第二絕 緣膜所組成之一間隔物;接著,藉助濕式蝕刻,從該第一 膜與該第二膜之間的規定區域中選擇性地移除該第一絕緣 膜。此製造方法較有利,因為可決定該具有絕緣屬性之間 隔物之形狀而不管該第一絕緣膜之剩餘部分之形狀。 在一種適用於依據本發明之第二方面之靜電式壓力轉換 器之製造方法中’形成_第—膜,其係用作該隔膜;在該 124466.doc -12- 200826717 第膜上形成一第一絕緣膜;藉助光阻圖案化及蝕刻,在 該第一絕緣膜内形成一實質具有一環狀形狀之通道;在該 通道内邛沈積一第二絕緣膜,其成分不同於該第一絕緣膜 之成分,以便形成由該第二絕緣膜所組成之間隔物;移除 在該間隔物内部所定位的該第:絕緣膜之㈣部分;移除 該第二絕緣膜,以便曝露其上形成該第二絕緣膜的第一絕 緣膜;接著,藉助濕式蝕刻,從該第一膜與該第二膜之間 的規定區域移除該第一絕緣膜。此製造方法較有利,因為 可形成一具有一絕緣屬性之環狀間隔物而不管該第一絕緣 膜之剩餘部分之形狀。 在本發明之一第二方面,一種靜電式壓力轉換器包括一 檔板(或一基板);一平板,其係使用一沈積在該檔板上之 板電極膜來形成;一隔膜,其係使用一隔膜電極膜來形 成;及複數個懸臂,各在其一末梢端部偏向該隔膜,從而 壓下該隔膜。由於該等懸臂之内部應力,可增加在該平板 與該隔膜之間的一第一間隙,從而改良該靜電式壓力轉換 益之穩定性。 在上述中,該檔板形成一後腔;該板電極膜具有一第一 穿透孔;在該隔膜之周邊端部與該檔板之開口邊緣之間形 成一具有一聲阻之第二間隙,該聲阻係施加於該後腔與該 第一穿透孔之間;在該後腔外部,在該隔膜之外部部分内 形成至少一第二穿透孔,其係與該第一穿透孔與該第二間 隙相通;該第一間隔與該第一穿透孔相通。此處,經由該 第一穿透孔將引起該隔膜位移之一空氣壓力而傳輸至該隔 124466.doc •13· 200826717 膜。當-非聲學空間(其係相對於該平板由該隔膜來界定) 具有一相對較小體積並以-氣密方式封閉時,施加至該非 聲學空間之壓力引起一反 應以致減小該隔膜之位移,從 而劣化靈敏性。此外’有可能由於該料學㈣之空氣壓 力。大孔壓力之間的空氣壓力差而意外毀壞該隔膜。因為 具有聲阻(其係、施加於該隔膜與該檔板之間)之第二間隙可In the above, when a bias voltage is applied, the separator is attracted to the flat plate due to electrostatic attraction occurring between the flat plate and the separator, thereby closing the non-acoustic space in a gas-tight manner. This prevents the acoustic wave from accidentally entering the non-acoustic space; therefore, the sensitivity of the condenser microphone can be prevented from deteriorating. In other words, the capacitive converter can be made to have flat frequency characteristics without degrading sensitivity in the low frequency range. The inner wall of the spacer is substantially formed - preferably in the annular shape, a small gap is formed in the annular inner wall of the space to reduce the cutoff frequency below the range of the audio frequency. In short, the inner wall of the spacer may be formed by a perfect ring shape or an imperfect ring shape. 'The imperfect ring shape includes a small gap' which allows the cutoff frequency to be lower than the audio frequency range or close to the lower limit of the audio frequency range. frequency. When the inner wall of the spacer is formed in a desired ring shape, it is preferred to form an additional gap at a predetermined position other than the spacer to establish a relationship between the air pressure and the atmospheric pressure of the acoustic space. balance. The wiring portion is formed to form a multilayer wiring substrate enclosing a base portion of the package of the electrostatic pressure transducer, or a portion corresponding to a base portion of a package embedded in a lead package. When the die of the condenser microphone is directly coupled to a circuit board for fixing an electronic component, the non-acoustic space is not applied when the wiring portion does not apply the bias voltage between the air pressure of the (four) circuit board 0 and the airtight mode. Closed; therefore, the air pressure in the non-acoustic space can be balanced with 124466.doc 200826717. This prevents the diaphragm from being accidentally destroyed due to the difference in air pressure, and therefore, the sensitivity of the condenser microphone due to the difference in air pressure can be prevented from being deteriorated. Incidentally, each of the foregoing electrostatic pressure transducers may further comprise a plurality of springs interconnected to the four diaphragms, and a support member interconnected to the springs such that the diaphragm spans the support Pieces. In general, the film inevitably has internal stress during its forming process. In the condenser microphone, the diaphragm (which is a film) is bridged across the support via the springs; therefore, the stress of the diaphragm is released by the springs, and the tension of the diaphragm ( It is also the stress response of the diaphragm) which is also released by the yellowing. Thereby, the amplitude of the diaphragm can be increased, and the sensitivity of the condenser microphone can be improved. In a method of fabricating an electrostatic pressure sensor according to the first aspect of the present invention, a first film is formed which is used as the separator; a first insulating film is formed on the first film; Forming a second film on the first insulating film, which is used as the flat plate; forming at least a hole in the first insulating film by photoresist patterning and etching; depositing a second insulating film inside the hole, The composition is different from the composition of the first insulating film to form a spacer composed of the second insulating film; then, by wet etching, a predetermined region between the first film and the second film is selected The first insulating film is removed sexually. This manufacturing method is advantageous because the shape of the spacer having the insulating property can be determined regardless of the shape of the remaining portion of the first insulating film. In a method of manufacturing an electrostatic pressure transducer according to a second aspect of the present invention, a 'formation-first film is used as the separator; and a film is formed on the film of 124466.doc -12-200826717 An insulating film; a channel having a substantially annular shape is formed in the first insulating film by photoresist patterning and etching; and a second insulating film is deposited in the channel, the composition of which is different from the first insulating layer a composition of the film to form a spacer composed of the second insulating film; removing a portion (4) of the first: insulating film positioned inside the spacer; removing the second insulating film to expose it a first insulating film of the second insulating film; then, the first insulating film is removed from a predetermined region between the first film and the second film by wet etching. This manufacturing method is advantageous in that an annular spacer having an insulating property can be formed regardless of the shape of the remaining portion of the first insulating film. In a second aspect of the invention, an electrostatic pressure transducer includes a baffle (or a substrate); a plate formed by using a plate electrode film deposited on the baffle; a diaphragm A diaphragm electrode film is used to form; and a plurality of cantilevers are each biased toward the diaphragm at a distal end thereof to press the diaphragm. Due to the internal stress of the cantilevers, a first gap between the plate and the diaphragm can be increased to improve the stability of the electrostatic pressure conversion benefit. In the above, the baffle forms a rear cavity; the plate electrode film has a first penetration hole; and a second gap having an acoustic resistance is formed between the peripheral end of the diaphragm and the opening edge of the baffle The acoustic resistance is applied between the rear cavity and the first penetration hole; outside the rear cavity, at least one second penetration hole is formed in the outer portion of the diaphragm, and the first penetration is The hole is in communication with the second gap; the first interval is in communication with the first penetration hole. Here, one of the first penetration holes will cause the diaphragm to displace one of the air pressures and transmit it to the diaphragm 124466.doc •13·200826717. When the non-acoustic space (which is defined by the diaphragm relative to the plate) has a relatively small volume and is hermetically sealed, the pressure applied to the non-acoustic space causes a reaction to reduce the displacement of the diaphragm , thereby deteriorating sensitivity. In addition, it is possible that due to the air pressure of the material (4). The air pressure difference between the macropore pressures accidentally destroys the diaphragm. Because there is a second gap between the acoustic resistance (which is applied between the diaphragm and the baffle)
、’至J於#牲膜之厚度,該犧牲膜係沈積於該隔膜電 «與該播板之間,故可排除此可能性。因而,可改良低 '員範圍内的靈敏度,同時相對於該靜電壓力轉換器(例如 該電容式麥克風)而確保高位準的穩定性。 該Μ具有複數個突出物’其末梢端部接觸該檔板以便 形成該第二間隙。由於該第二間隙取決於該隔膜之突出物 高度,故可精確地設^靈敏度並可靠地確保穩定性。或 者’該檔板具有複數個突出#,其接觸該隔膜以便形成該 第二間隙。由於該第二間隙取決於該檀板之突出物高度, 故可精確地設定靈敏度並可靠地確保穩定性。此外,複數 個通道(其係從該後腔外部而伸長)係形成於該檔板内,以 便形成該第二間隙,並φ $ # # , 、^中該第二間隙取決於該等通道之尺 寸。 有可能形成複數個第二穿透孔,其中該隔臈電極膜在該 等相鄰第二穿透孔之間具有_f曲帶狀形狀。此可容易地 引(I隔媒位移,目此,可減小該懸臂之内部應力,此係 在製k期間藉由增加該隔膜與該平板之間的第—間隙來改 良靈敏度所必需的。 124466.doc 14 200826717 該懸臂可使用複數個膜來形成,藉此在其厚度方向上容 易地改變該懸臂之内部應力。該懸臂與該板電極膜二者可 使用普通膜來形成,以便減小製造成本。 該等懸臂具有多個突出物,其從其末梢端部向該隔膜突 出且其末梢端部接觸該隔膜,藉此可減小該等懸臂之内部 應力。或者,在該隔膜膜形成複數個突出物,其中其向爷 專懸臂犬出並接觸該等懸臂之末梢端部。 【實施方式】 將參考附圖,藉助範例進一步詳細說明本發明。 1 ·第一具體實施例 圖ΙΑ、1B及1C係概略性顯示依據本發明之一第一具體 實施例之一電容式麥克風丨之構造之斷面圖,關於膜層壓 結構未作特定說明。圖丨八及1B之切割平面係垂直於一平 板12之表面。圖lc之切割平面平行於平板12之表面。圖 1C顯不從平板12查看的一隔膜16。明確而言,圖1A係沿 圖1C中線a至A所截取之一縱向斷面圖,而圖1B係沿圖1C 中線B至B所截取之一縱向斷面圖。 電容式麥克風1包括形成一固定電極之平板12與形成一 振動電極之隔膜16。平板12係固定至一環狀壁8。隔膜i6 係經由彈簧19而橫跨壁8所界定之内部空間來橋接。 一用作一檔板之基板14係經由黏著劑而固定至一佈線部 分17。一穿透孔(或一開口)係形成以在基板厚度方向上穿 過基板14 ’以便在基板14之一開口邊緣9内部形成一腔 15 °腔15增加相對於隔膜16與平板12相對定位之一非聲學 124466.doc -15- 200826717 空間之體積。即,腔1 5係形成以減小由於隔膜1 6振動所引 起的在該非聲學空間内所出現的一壓力振動之振幅。 壁8係使用形成於基板14上的一或多個膜來形成。壁8連 接於平板12與基板14之間。在第一具體實施例中,一支撐 件係界定為壁8與彈簧19互連之互連部分。 隔膜16係經由該等彈簧19而橫跨於腔15之上來橋接,以 便分割一聲學空間與該非聲學空間。隔膜16係使用一或多 個膜(包括形成該振動電極之一傳導膜)來形成。明確而 言’隔膜16具有一圓形輪廓覆蓋基板14之開口,其中隔膜 16之厚度在(例如)〇·5 μιη以至1.5 μιη範圍内變化。 該等彈簧19係從隔膜16之圓周周邊之規定位置向壁8伸 長。隔膜16之一内部應力係藉助該等彈簧19的變形來減 〇 平板12係使用一或多個膜來形成,包括形成該固定電極 之一傳導膜。複數個孔(即聲孔11)係形成以在規定位置穿 過平板12。聲波傳送穿過該等聲孔丨丨,以便向内傳播進入 電容式麥克風1内,從而使隔膜16振動。 從一垂直於隔膜16之方向上查看,複數個間隔物1〇係在 一環狀區域内配置於平板12與隔膜16之間。該等間隔物1〇 可形成為島狀物’其係散佈於一垂直於隔膜16之方向上。 或者,其可形成一環狀。該等間隔物10之基底部分係互連 至平板12。間隔物1〇之高度係小於平板12與隔膜16之間的 距離。因此,在隔膜16上不施加外力之條件下,該等間隔 物10之末梢端部遠離隔膜16。該等間隔物1〇之數目及配置 124466.doc -16- 200826717 $基於隔膜16之形狀、厚度、内部應力及支撐結構以及電 谷式麥克風1之特性來加以適當設計。 為了防止由於在具有前述構造之電容式麥克風1内所出 現之靜電吸引,將隔膜16意外地附著至該平板,必需調整 "亥等彈耳19之形狀、隔膜16之内部應力、用於配置該等間 隔物1〇之裱狀區域之直徑、及間隔物10之高度。為了實現 以下情形,即不施加靜電吸引,在隔膜16之周邊端部與基 板Μ之開啟邊緣9之間的距離變得小於隔膜16與基板μ之 開口邊緣9之間的距離,且隔膜16之周邊端部可部分接觸 基板14之開口邊緣9,必需調整在隔膜16與該等間隔物1〇 ]的《亥專接觸位置内部所界定之内部區域、在隔膜16盘 違等間隔物10之間的該等接觸位置外部所界定的隔膜16之 周邊部分之寬度、及隔膜16之内部應力。隔膜16之内部應 力係藉由調整形成隔膜16之膜材料、隔膜16之厚度、及施 加至隔膜16之偏壓電壓來加以減小。例如,該偏壓電壓在 5 V至15 V範圍内變化。 該第一具體實施例係設計有多個規定尺寸,其中不施加 "亥偏壓電壓’在平板12與隔膜16之間的距離係設定至4 ; 在隔膜16與基板14之開口邊緣9之間的距離係設定至ι·5 μΠ1 ;在隔膜16之周邊端部與在隔膜16與間隔物1〇之間接 觸位置之間的距離係設定至13〇 μιη;隔膜16之内部區域 (包括接觸該等間隔物1〇之位置)之直徑係設定至700 μπι。 此外’隔膜16具有一彈性變形性,在於在施加該偏壓電壓 時其中心部分會向平板12接近2 μπι。 124466.doc -17- 200826717 可修改電容式麥克風1,使得隔膜16之圓周周邊完全接 觸基板i 4之開π邊緣9。在此修改例中,較佳的係(例如相 對於開口邊緣9或間隔物1 G)在-適當位置形成-較小間 隙,以便在該非聲學空間之内部麼力與大氣麼力之間建立 一平衡。 接著,將詳細說明電容式麥克風丨之操作。當將一藉由 一電荷幫浦(未顯示)升壓的偏壓電壓施加於平板12與隔膜 16之間時,由於靜電吸引,使隔膜16部分接觸該等間隔物 10,如圖1A及1B中虛線所示。即,界定於與該等間隔物 10接觸之位置内部的隔膜16之内部區域被吸引至平板Η, 而界定於與泫等間隔物1〇接觸之位置外部的隔膜丨6之周邊 邛刀向基板14靠近,使得使隔膜16之周邊端部(除與該等 彈黃19互連之部分外)接觸基板14之内端9。在此狀態下, 當聲波進入該等聲孔丨丨内以便到達隔膜16時,隔膜16相對 於平板12而振動,因為比較隔膜16,平板12具有一較大厚 度及杈南剛性來對抗偏斜。此時,隔膜16接觸該等間隔 物1〇而振動,如圖2中虛線所示。 如上述’該第一具體實施例之電容式麥克風1能夠振動 隔膜16,同時使該隔膜之周邊端部之至少一規定部分接觸 用作一檔板之基板14的開口邊緣9,以便減小該聲學空間 與该非聲學空間之間的通道之寬度。此增加連接於該聲學 二間與该非聲學空間之間通道的聲阻;且此使低頻範圍聲 波難以穿過該通道。即,可防止劣化電容式麥克風1之靈 敏度’其係在聲波意外進入隔膜16所界定之非聲學空間内 124466.doc -18- 200826717 時會發生。 比車又其靈敏度會相對於低頻範園簦波, to the thickness of the film, the sacrificial film is deposited between the diaphragm and the board, so this possibility can be eliminated. Thus, the sensitivity in the low range can be improved while ensuring a high level of stability with respect to the electrostatic pressure transducer (e.g., the condenser microphone). The file has a plurality of protrusions whose distal ends contact the baffle to form the second gap. Since the second gap depends on the height of the protrusion of the diaphragm, the sensitivity can be accurately set and the stability can be reliably ensured. Or the panel has a plurality of protrusions # that contact the diaphragm to form the second gap. Since the second gap depends on the height of the protrusion of the sand board, the sensitivity can be accurately set and the stability can be reliably ensured. In addition, a plurality of channels (which are elongated from the outside of the rear cavity) are formed in the baffle to form the second gap, and the second gap in the φ $ # # , , ^ depends on the channels size. It is possible to form a plurality of second penetration holes, wherein the barrier electrode film has a _f ribbon shape between the adjacent second penetration holes. This can be easily induced (I media displacement, as desired, to reduce the internal stress of the cantilever, which is necessary to improve sensitivity by increasing the first gap between the diaphragm and the plate during k. 124466 .doc 14 200826717 The cantilever can be formed using a plurality of films, whereby the internal stress of the cantilever is easily changed in the thickness direction thereof. Both the cantilever and the plate electrode film can be formed using a common film to reduce manufacturing. The cantilever has a plurality of protrusions projecting from the distal end thereof toward the diaphragm and the distal end thereof contacting the diaphragm, thereby reducing the internal stress of the cantilever. Alternatively, the diaphragm film is formed in plural An overhang in which the cantilevered dog is out of contact with the distal end of the cantilever. [Embodiment] The present invention will be further described in detail by way of examples with reference to the accompanying drawings. 1 · First Embodiment FIG. And 1C schematically show a cross-sectional view of a configuration of a condenser microphone according to a first embodiment of the present invention, and the film laminate structure is not specifically described. Figs. 8 and 1B The cutting plane is perpendicular to the surface of a plate 12. The cutting plane of Figure lc is parallel to the surface of the plate 12. Figure 1C shows a diaphragm 16 as viewed from the plate 12. Specifically, Figure 1A is taken along line a of Figure 1C. A is taken as a longitudinal sectional view, and Fig. 1B is a longitudinal sectional view taken along line B to B in Fig. 1C. The condenser microphone 1 includes a flat plate 12 forming a fixed electrode and a diaphragm forming a vibrating electrode. 16. The plate 12 is secured to an annular wall 8. The diaphragm i6 is bridged across the interior space defined by the wall 8 via a spring 19. A substrate 14 used as a baffle is secured to a wiring via an adhesive. Portion 17. A through hole (or an opening) is formed to pass through the substrate 14' in the thickness direction of the substrate to form a cavity 15 inside the opening edge 9 of the substrate 14. The cavity 15 is increased relative to the diaphragm 16 and the plate 12. One of the relative positions is non-acoustic 124466.doc -15- 200826717 The volume of space. That is, the cavity 15 is formed to reduce the amplitude of a pressure vibration occurring in the non-acoustic space due to the vibration of the diaphragm 16. 8 series uses one or more formed on the substrate 14. A membrane is formed. The wall 8 is connected between the plate 12 and the substrate 14. In the first embodiment, a support is defined as an interconnecting portion of the wall 8 interconnected with the spring 19. The diaphragm 16 is via the springs 19 And bridging across the cavity 15 to divide an acoustic space from the non-acoustic space. The diaphragm 16 is formed using one or more membranes (including a conductive membrane forming one of the vibrating electrodes). Specifically, the membrane 16 has A circular contour covers the opening of the substrate 14, wherein the thickness of the diaphragm 16 varies, for example, from 〇5 μηη to 1.5 μηη. The springs 19 are elongated from the predetermined position around the circumference of the diaphragm 16 toward the wall 8. The internal stress of one of the diaphragms 16 is reduced by the deformation of the springs 19. The flat plate 12 is formed using one or more films, including a conductive film forming the fixed electrode. A plurality of holes (i.e., sound holes 11) are formed to pass through the flat plate 12 at prescribed positions. Sound waves are transmitted through the acoustic holes 以便 to propagate inwardly into the condenser microphone 1 to vibrate the diaphragm 16. Viewed in a direction perpendicular to the diaphragm 16, a plurality of spacers 1 are disposed between the flat plate 12 and the diaphragm 16 in an annular region. The spacers 1〇 may be formed as islands' which are interspersed in a direction perpendicular to the diaphragm 16. Alternatively, it may form a ring shape. The base portions of the spacers 10 are interconnected to the panel 12. The height of the spacer 1 is less than the distance between the flat plate 12 and the diaphragm 16. Therefore, the distal end portions of the spacers 10 are away from the diaphragm 16 under the condition that no external force is applied to the diaphragm 16. The number and configuration of the spacers are suitably designed based on the shape, thickness, internal stress and support structure of the diaphragm 16, and the characteristics of the microphone 1 . In order to prevent accidental adhesion of the diaphragm 16 to the flat plate due to electrostatic attraction occurring in the condenser microphone 1 having the aforementioned configuration, it is necessary to adjust the shape of the slider 19 such as the shovel, the internal stress of the diaphragm 16, and the configuration. The diameter of the weir-like region of the spacers 1 and the height of the spacers 10. In order to achieve the situation where no electrostatic attraction is applied, the distance between the peripheral end of the diaphragm 16 and the opening edge 9 of the substrate 变得 becomes smaller than the distance between the diaphragm 16 and the opening edge 9 of the substrate μ, and the diaphragm 16 The peripheral end portion may partially contact the opening edge 9 of the substrate 14, and must be adjusted between the diaphragm 16 and the spacers, the inner region defined by the interior of the spacer, and between the separator 16 and the spacer 10 The width of the peripheral portion of the diaphragm 16 defined by the exterior of the contact locations, and the internal stress of the diaphragm 16. The internal stress of the diaphragm 16 is reduced by adjusting the film material forming the diaphragm 16, the thickness of the diaphragm 16, and the bias voltage applied to the diaphragm 16. For example, the bias voltage varies from 5 V to 15 V. The first embodiment is designed with a plurality of specified dimensions in which the distance between the plate 12 and the diaphragm 16 is not applied to the "hai bias voltage" is set to 4; at the open edge 9 of the diaphragm 16 and the substrate 14. The distance between the two is set to ι·5 μΠ1; the distance between the peripheral end of the diaphragm 16 and the contact position between the diaphragm 16 and the spacer 1〇 is set to 13 μm; the inner region of the diaphragm 16 (including the contact) The diameter of the spacers is set to 700 μm. Further, the diaphragm 16 has an elastic deformability in that its central portion approaches the flat plate 12 by 2 μm when the bias voltage is applied. 124466.doc -17- 200826717 The condenser microphone 1 can be modified such that the circumferential periphery of the diaphragm 16 completely contacts the open π edge 9 of the substrate i 4 . In this modification, a preferred system (e.g., relative to the opening edge 9 or the spacer 1 G) forms a smaller gap in the appropriate position to establish a relationship between the internal force of the non-acoustic space and the atmospheric force. balance. Next, the operation of the condenser microphone will be described in detail. When a bias voltage boosted by a charge pump (not shown) is applied between the plate 12 and the diaphragm 16, the diaphragm 16 is partially contacted with the spacers 10 due to electrostatic attraction, as shown in FIGS. 1A and 1B. The dotted line is shown. That is, the inner region of the diaphragm 16 defined inside the position in contact with the spacers 10 is attracted to the flat plate, and the peripheral edge of the diaphragm 6 defined outside the position where the spacers 1 are in contact with the spacers is bladed toward the substrate. 14 is brought close so that the peripheral end of the diaphragm 16 (except for the portion interconnected with the springs 19) contacts the inner end 9 of the substrate 14. In this state, when sound waves enter the acoustic holes to reach the diaphragm 16, the diaphragm 16 vibrates relative to the plate 12, because the diaphragm 12 has a larger thickness and a southerly rigidity to counter the deflection. . At this time, the diaphragm 16 vibrates in contact with the spacers 1 所示 as shown by a broken line in Fig. 2 . As described above, the condenser microphone 1 of the first embodiment is capable of vibrating the diaphragm 16 while causing at least a predetermined portion of the peripheral end portion of the diaphragm to contact the opening edge 9 of the substrate 14 serving as a shutter to reduce the The width of the channel between the acoustic space and the non-acoustic space. This increases the acoustic resistance of the channel connected between the acoustic two and the non-acoustic space; and this makes it difficult for the low frequency range of sound waves to pass through the channel. That is, it is possible to prevent the deterioration of the sensitivity of the condenser microphone 1 from occurring when the sound wave accidentally enters the non-acoustic space defined by the diaphragm 16 124466.doc -18-200826717. Compared with the car, its sensitivity will be relative to the low frequency
的頻率特性。 而劣化的 該第一具體實施例之電容式麥克 波與低頻範圍聲波二者實現平坦Frequency characteristics. The deteriorated first embodiment of the capacitive microphone wave and the low frequency range sound wave achieve flat
防止由於空氣壓力差而毀壞隔膜16; 时閉,從而在該非聲學 & 一平衡。此使得可能 ,且此使得可控制電容 式麥克風1之靈敏度劣化。 圖3係顯不形成電容式麥克風丨之一膜層壓結構範例之一 部分斷面圖。 基板14係使用一由單晶矽所組成的晶圓1〇7來形成。 使用一形成該等間隔物10之絕緣膜1〇5與一蝕刻阻止膜 (, 1〇2以及基板14來形成壁8,其近接佈線部分17之隔膜16所 界定之非聲學空間。 平板12係使用一傳導膜1〇4與絕緣膜1〇5來形成。傳導膜 1〇4形成固定電極。平板12係使用絕緣膜ι〇5來形成,其中 壁8係連續互連至平板12之表面層;因此平板丨2係互連至 壁8 〇 間隔物10係使用絕緣膜105來形成。絕緣膜1〇5之突出物 形成該等間隔物10,該等突出物形成平板12之表面層,向 基板14突出並穿過平板12;因此該等間隔物10係互連至平 124466.doc -19- 200826717 板12 〇 隔膜16、該等彈簧19及支撐件13係使用一形成該隔膜電 極之傳導膜108來形成。用於支撐該等連接至隔膜16之彈 簧19的支撐件13係嵌入與傳導膜1〇8有關的壁8内。 接著’將參考圖4A至4D、圖5A至5C、圖6A及6B及圖7A 及7B說明電容式麥克風1之一製造方法,該等圖式係用於 解釋電容式麥克風1之製造步驟之斷面圖。該些圖示之各 圖示僅顯示與一單晶片區域相關的一斷面,其中可適當地 5又计用於連接固定電極及振動電極與一信號處理電路(未 顯示)之觸點’因而未作顯示。 在圖4A所示之一第一步驟中,在由單晶矽所組成之晶圓 107上形成钱刻阻止膜102。蝕刻阻止膜ι〇2係一由si〇2組 成的具有一絕緣能力之犧牲膜,用作深RIE(其中RIE代表 反應性離子蝕刻)中的一端點控制,此將稍後予以說明。 接著,藉助濕式蝕刻將一光阻光罩2〇 1之圖案轉移至蝕刻 阻止膜102上’從而在钱刻阻止膜丨〇2内形成小凹坑3 〇 1。 在如圖4B所示之一第二步驟中,將傳導膜1〇8形成於蝕 刻阻止膜102上,接著將一光阻光罩2〇2之圖案轉移至傳導 膜1〇8,從而形成隔膜16之輪廓與該等彈簧19之輪廓。隔 膜16與該等彈簧19係使用傳導膜1〇8來形成。傳導膜1〇8係 由金屬膜或一多晶石夕膜所組成,其係藉助分解CVD(其 中CVD代表化學汽相沈積)來加以沈積,其摻雜有諸如磷 (P)之雜質並經過退火。 在圖4C所示之一第三步驟中,將一間隔物膜1〇3形成於 124466.doc -20- 200826717 蝕刻阻止膜102與傳導膜108上方,接著將一光阻光罩2〇3 之圖案轉移至間隔物膜103,從而在間隔物膜1〇3内形成小 凹坑302。例如,間隔物膜103係以一方式以一所需厚度來 形成,使得藉助CVD細薄沈積Si02並反複經過退火。 在如圖4D所示之一第四步驟中,將傳導膜1〇4形成於蝕 刻阻止膜103上,接著將一光阻光罩204之圖案轉移至傳導 膜104,從而形成固定電極(其係使用傳導膜1〇4來形成)之Prevent the diaphragm 16 from being destroyed due to the difference in air pressure; when closed, thus in a non-acoustic & balance. This makes it possible, and this makes it possible to control the sensitivity of the condenser microphone 1 to deteriorate. Figure 3 is a partial cross-sectional view showing an example of a film laminate structure in which a condenser microphone is not formed. The substrate 14 is formed using a wafer 1〇7 composed of a single crystal germanium. An insulating film 〇5 forming the spacers 10 and an etch stop film (1, 2 and the substrate 14 are used to form the wall 8 which is adjacent to the non-acoustic space defined by the diaphragm 16 of the wiring portion 17. The conductive film 1〇4 is formed using a conductive film 1〇4. The conductive film 1〇4 forms a fixed electrode. The flat plate 12 is formed using an insulating film 〇5, wherein the walls 8 are continuously interconnected to the surface layer of the flat plate 12. Therefore, the flat plate 2 is interconnected to the wall 8 and the spacer 10 is formed using the insulating film 105. The protrusions of the insulating film 1〇5 form the spacers 10, and the protrusions form the surface layer of the flat plate 12, The substrate 14 protrudes through the plate 12; thus the spacers 10 are interconnected to a flat 124466.doc -19-200826717 plate 12 〇 diaphragm 16, the springs 19 and the support 13 are formed using a conductive electrode forming the diaphragm A film 108 is formed. The support member 13 for supporting the springs 19 connected to the diaphragm 16 is embedded in the wall 8 associated with the conductive film 1 。 8. Next, 'will refer to Figs. 4A to 4D, Figs. 5A to 5C, and Fig. 6A and 6B and FIGS. 7A and 7B illustrate a method of manufacturing a condenser microphone 1 which is used in the drawings. A cross-sectional view of the manufacturing steps of the condenser microphone 1 is explained. Each of the illustrations shows only a section associated with a single wafer area, wherein it can be suitably used to connect the fixed electrode and the vibrating electrode with A contact of a signal processing circuit (not shown) is thus not shown. In a first step shown in Fig. 4A, a money engraving film 102 is formed on a wafer 107 composed of a single crystal germanium. The film ι〇2 is a sacrificial film composed of si〇2 having an insulating ability and used as an end point control in deep RIE (where RIE represents reactive ion etching), which will be described later. Etching transfers a pattern of the photoresist mask 2〇1 onto the etch stop film 102, thereby forming a small pit 3 〇1 in the film 丨〇2. In the second step shown in FIG. 4B The conductive film 1〇8 is formed on the etching stopper film 102, and then the pattern of the photoresist mask 2〇2 is transferred to the conductive film 1〇8, thereby forming the contour of the separator 16 and the contour of the springs 19. The diaphragm 16 and the springs 19 are formed using the conductive film 1〇8. The film 1〇8 is composed of a metal film or a polycrystalline film, which is deposited by decomposition CVD (where CVD represents chemical vapor deposition), which is doped with impurities such as phosphorus (P) and annealed. In a third step shown in FIG. 4C, a spacer film 1〇3 is formed on the 124466.doc -20-200826717 etch stop film 102 and the conductive film 108, and then a photoresist mask 2〇3 is formed. The pattern is transferred to the spacer film 103 to form small pits 302 in the spacer film 1〇3. For example, the spacer film 103 is formed in a desired thickness in a manner such that SiO 2 is thinly deposited by CVD. It is repeatedly annealed. In a fourth step as shown in FIG. 4D, a conductive film 1〇4 is formed on the etching stopper film 103, and then a pattern of the photoresist mask 204 is transferred to the conductive film 104, thereby forming a fixed electrode (the system thereof) Using a conductive film 1〇4 to form)
輪廓。傳導膜104係由一金屬膜或一多晶矽膜所組成,其 係藉助分解CVD來加以沈積,其摻雜有諸如磷(p)之雜質 並經過退火。 在圖5A所示之一第五步驟中,藉助實現一光阻光罩2〇5 之圖案轉移之蝕刻,在傳導膜1〇4與間隔物膜1〇3内形成孔 3 〇4,其用於形成該等間隔物丨〇。明確而言,使傳導膜1 經過各向同性蝕刻,接著使間隔物膜103經過各向異性乾 式蝕刻。言亥各向異性乾式蝕刻在該等蝕刻部分到達傳導膜 ⑽之前停止,藉此可形成用於形成具有細薄末梢端部之 間隔物H)之孔304。即便該等孔3G4之深度係設定使得曝露 傳導膜108,但仍可藉由移除—絕緣㈣6(其係、在下一步 驟中形成)來隔離該等間隔物1〇與隔膜16。 夕 順便提及,該等孔3〇4不一定 疋糟助刖述先阻圖案化及蝕 刻來形成;因此,可葬狀/点丨L、士 ,Γ- 了精助(例如)奈米壓印技術來形成該等 在圖5B所示之一第六牛踐 、v驟中,將絕緣膜1〇6 物膜103上,接著將一也伽, 乂取於間“ 先阻光罩206之圖案轉移至絕緣膜 124466.doc •21 · 200826717 106,從而移除絕緣膜106之不需要部分。例如,絕緣膜 106係由Si〇2組成,其係經過CVD。絕緣膜1〇6提供形成隔 膜16之傳導膜108與形成平板12之傳導膜1〇4之間的絕緣。 在圖5C所示之一第七步驟中,藉由使用一光阻光罩2〇8 來部分移除間隔物膜i 〇 3與蝕刻阻止膜丨〇 2,從而形成孔 306,其係用於形成用作壁8的絕緣膜1〇5之一規定部分。 明確而言,將間隔物膜103經過各向同性濕式蝕刻,接著 將間隔物膜103與蝕刻阻止膜102經過各向異性乾式蝕刻, 從而形成用於曝露晶圓1〇7之該等孔3〇6。不移除覆蓋有傳 導膜108的蝕刻阻止膜1〇2之一規定部分,因為傳導膜1〇8 界定一姓刻端點。 在圖6A所示之一第八步驟中,在間隔物膜1〇3與傳導膜 104上方形成一絕緣膜105。絕緣膜1〇5係由一規定材料組 成,該材料與間隔物膜1〇3具有蝕刻選擇性。例如,使用 一 SiN膜來形成絕緣膜105,該SiN膜之厚度係藉由重複執 行分解CVD及退火來加以調整。 在圖6B所示之一第九步驟中,藉助蝕刻將一光阻光罩 211之圖案轉移至絕緣膜1〇5,從而形成穿過絕緣膜ι〇5與 傳導膜104之該等聲孔u。明確而言,使用不同蝕刻氣 體’執行兩次各向異性蝕刻,以便形成該等聲孔丨i。 接著’藉助背面研磨來移除依序沈積在晶圓1 〇7背側之 傳導膜108、傳導膜104及絕緣膜1〇5 ;其後,在圖7A所示 之一第十步驟中,將一光阻光罩212形成於晶圓1〇7背側 上’接著將晶圓107經過深RI]E,以便形成腔15。 124466.doc -22- 200826717 在圖7B所不之—十—步驟中,絕緣膜⑼制作-餘刻 阻止膜,以便供應-钕刻劑至該等聲孔u及腔训,從而 藉助濕式㈣來移除餘刻阻止膜102與間隔物膜ι〇3之不需 要部分。 最後,藉助切割將晶圓107劃分成個別片。因而,可完 成圖3所示之電容式麥克風1之產生。 土該第-具體實施例係設計成用以適用於其中係該隔膜更 罪近該佈線部分定位而非該平板的前述第一結構。當铁, 可修改該第-具體實施例以㈣於其中係該平板更靠㈣ 佈線部分定位而非該隔臈的前述第二結構。在此修改例 中,具有一允許聲波進入其内之開口的構板係相對於該隔 膜與位於該佈線部分對面1,具有開口之基板係黏附至 该佈線部分’ λ中該平板與該檔板係由互連至該基板之壁 來支撐。此外’該等間隔物係在該隔膜之周邊端部内部而profile. The conductive film 104 is composed of a metal film or a polysilicon film which is deposited by decomposition CVD which is doped with impurities such as phosphorus (p) and annealed. In a fifth step shown in FIG. 5A, a hole 3 〇4 is formed in the conductive film 1〇4 and the spacer film 1〇3 by etching to realize pattern transfer of the photoresist mask 2〇5. The spacers are formed. Specifically, the conductive film 1 is subjected to isotropic etching, and then the spacer film 103 is subjected to anisotropic dry etching. The anisotropic dry etching is stopped before the etched portions reach the conductive film (10), whereby the holes 304 for forming the spacers H) having the thin end portions can be formed. Even if the depth of the holes 3G4 is set such that the conductive film 108 is exposed, the spacers 1 and 16 can be isolated by removing the insulating (four) 6 (which is formed in the next step). By the way, it is mentioned that the holes 3〇4 are not necessarily formed by the patterning and etching of the first resistance; therefore, it can be funeral/points, L, s, Γ - fine (for example) nano pressure The printing technique is used to form the sixth film of the sixth film, and the film of the insulating film 1 〇6, and then the gamma is taken up between the first masks 206. The pattern is transferred to the insulating film 124466.doc • 21 · 200826717 106, thereby removing unnecessary portions of the insulating film 106. For example, the insulating film 106 is composed of Si〇2, which is subjected to CVD. The insulating film 1〇6 is provided to form a separator. The insulation between the conductive film 108 of 16 and the conductive film 1〇4 forming the flat plate 12. In a seventh step shown in Fig. 5C, the spacer film is partially removed by using a photoresist mask 2〇8. i 〇 3 and the etch stop film 丨〇 2, thereby forming a hole 306 for forming a prescribed portion of one of the insulating films 1 〇 5 serving as the wall 8. Specifically, the spacer film 103 is subjected to isotropic wetness. Etching, and then the spacer film 103 and the etch stop film 102 are subjected to anisotropic dry etching to form an exposed wafer 1 〇 7 The holes 3 〇 6. The prescribed portion of the etch stop film 1 〇 2 covered with the conductive film 108 is not removed because the conductive film 1 〇 8 defines an end point. In the eighth step shown in FIG. 6A An insulating film 105 is formed over the spacer film 1〇3 and the conductive film 104. The insulating film 1〇5 is composed of a prescribed material having an etch selectivity with the spacer film 1〇3. For example, one is used. The SiN film is used to form the insulating film 105, and the thickness of the SiN film is adjusted by repeatedly performing decomposition CVD and annealing. In a ninth step shown in FIG. 6B, the pattern of the photoresist mask 211 is transferred by etching. To the insulating film 1〇5, thereby forming the acoustic holes u through the insulating film 〇5 and the conductive film 104. Specifically, two anisotropic etchings are performed using different etching gases to form the acoustic holes丨i. Next, the conductive film 108, the conductive film 104, and the insulating film 1〇5 sequentially deposited on the back side of the wafer 1 〇7 are removed by back grinding; thereafter, in the tenth step shown in FIG. 7A Forming a photoresist mask 212 on the back side of the wafer 1〇7 and then passing the wafer 107 deep RI]E, in order to form the cavity 15. 124466.doc -22- 200826717 In the step (10) of FIG. 7B, the insulating film (9) is formed with a residual film to supply the encapsulating agent to the acoustic holes u And cavity training, thereby removing unnecessary portions of the residual film 102 and the spacer film ι 3 by means of wet (four). Finally, the wafer 107 is divided into individual pieces by means of dicing. Thus, the completion of FIG. 3 can be completed. The generation of the condenser microphone 1. The first embodiment is designed to be suitable for the aforementioned first structure in which the diaphragm is positioned closer to the wiring portion than the flat plate. In the case of iron, the first embodiment can be modified to (4) the aforementioned second structure in which the flat plate is positioned further by the (four) wiring portion than the barrier. In this modification, a plate having an opening allowing the sound wave to enter therein is adhered to the opposite side of the wiring portion with respect to the diaphragm, and the substrate having the opening is adhered to the wiring portion 'λ, the plate and the baffle It is supported by a wall interconnected to the substrate. Further, the spacers are internal to the peripheral end of the diaphragm.
U :成於該環狀區域内,丨中該等彈簧係互連至該隔膜之周 端部,使得該隔膜係經由該等彈簧而橫跨該壁之内部區 域來橋接。 在不施加—偏壓電壓時,該隔膜之周邊端料接觸該槽 板之開口邊緣。因λ,可藉助由該隔臈、檔板及壁所界定 之通道,纟空氣壓力上在該聲學空間與該非聲學空 近該佈線部分而界定)之間建立一平衡。在施加—偏壓電 :二在該等間隔物之接觸位置内部界定的該隔膜之内部 分*近該平板;由於該隔膜之剛性,在該等間隔物之接 位置外部界定的該隔臈之外部部分(或周邊部分)靠近該 124466.doc • 23 - 200826717 栺扳;且該隔膜之周邊 此減小連接於該聲學* 刀 錢板之開口邊緣。 度,其中該隔膜由於聲波 一1之間的通道之寬 八牟及而振動。因此, 供類似於該第一具體實施例之效果。,述t改例可提 :該第-具體實施例中,該等間隔物 可修改該第一具體實施例 忒千板。 板,而是連接至兮隔膜/ 4間隔物不連接至該平 疋運接至„亥“膜。在此修改例中,在施加 壓時’該隔膜靠近該平板,使得偏壓電 等間隔物之互連部分之相對 ^臈的该 了鲕接觸该平板。此處,由於 該隔膜之剛性,在該等間隔物 、 项μ <立運σ卩分外部的該隔膜 之外部部分靠近該檔板,且該隔 、 /丨初勝之周邊柒部部分接觸 該檔板之開口邊緣。順便提及,例如,可進—步修㈣ 等間隔物,使得其與該平板及該隔膜二者隔離並連接= 該壁。 接著,將詳細地說明依據該第一具體實施例之一變更之 一電容式麥克風2。圖8Α、8Β及8C係示意性顯示電容式麥 克風2之構造之斷面圖,關於膜層壓結構不作特定說明, 其中與圖ΙΑ、1Β及1C所示该等部分相同的部分由相同來 考數字來指定;因此省略其重複說明。 圖8Α及8Β之切割平面係垂直於平板12之表面,而圖8C 之切割平面係平行於板12之表面。圖8 C顯示從平板丨2杳看 的隔膜16。明確而言,圖8A係沿圖8C中線A至A所截取之 一斷面圖,而圖8B係沿圖8C中線B至B所截取之一斷面 圖0 124466.doc -24- 200826717 在申請專利範圍語言巾,壁可定義為壁8、基板14及在 間2物ίο外部的平板12之外部部分之集合,使得其涵蓋非 聲學空間以及隔膜16、間隔物10及佈線部分17。圖8八至 8C所不之此變更不同於圖丨八至1(:所示之第一具體實施 例,在於間隔物10係在最外部聲孔丨丨外的一位置處實質上 以一環狀整體形成。 例如,在其徑向方向上測量的間隔物1〇之寬度係4 μηι。 (' 用作間隙之狹縫1 00係形成於環狀間隔物10内。狹縫 100形成一4 μιη寬度與一4 μηι高度。截止頻率取決於狹縫 1〇〇之形狀,其中具有該等前述尺寸之狹縫100實現大約3〇 Ηζ之截止頻率,其接近音訊頻率範圍下限。 接著’將說明電容式麥克風2之整體操作。在施加一偏 壓電壓時,隔膜16接近平板12而移動,其中隔膜16之環狀 周邊部分接觸間隔物1〇。圖8八及犯使用虛線顯示隔膜16 4为接觸間隔物1 〇。聲波透過平板i 2之聲孔丨丨傳送,以便 I; 達到隔膜16,從而其由於聲波而振動。當隔膜16部分接觸 間隔物10時,近接佈線部分17之隔膜16所界定非聲學空間 , 實貝上與該聲學空間隔離,除了對應於間隔物10之規定空 間外。由於難以使聲波(其係被偵測物件)進入隔膜丨6所界 定之非聲學空間,故可防止意外劣化電容式麥克風2之靈 敏度。不施加一偏壓電壓時,隔膜16不接觸間隔物1〇,使 得在隔膜16所分割之聲學空間與非聲學空間之間不會建立 空氣壓力差。即便在將偏壓電壓施加至電容式麥克風2, 仍可藉助間隔物1 〇之狹縫1 〇〇,在該非聲學空間之空氣壓 124466.doc -25- 200826717 力與大氣壓力之間建立一平衡。此防止隔膜16由於空氣壓 力差而意外毀壞。此外,可防止電容器麥克風2之靈敏度 由於空氣壓力差而劣化。 可適當決定該等狹縫100之數目,只要截止頻率保留於 音頻頻率範圍之外。即,可在間隔物10内形成複數個狹縫 100。在此情況下,較佳的係在除間隔物i〇外的一規定位 置(例如關於隔膜16)處形成一額外間隙,以便在該非聲學 、空間之空氣壓力與大氣壓力之間建立一平衡。 圖9係顯示形成電容式麥克風2之一膜層壓結構範例之一 斷面圖。 基板14係使用一由單晶矽所組成之晶圓1 〇7來形成。 壁8係由蝕刻阻止膜1〇2、用於在隔膜16與平板12之間形 成一間隙之間隔物103、及形成間隔物1 〇之絕緣膜1 〇5等構 成。 平板12係使用傳導膜1〇4來形成,以便形成該固定電 r、 極。傳導膜104接合用於形成壁8之絕緣膜105。 間隔物10係使用絕緣膜105來形成。 隔膜16與該等彈簧19係使用傳導膜1〇8所形成,該傳導 膜還用於形成該振動電極。傳導膜108接合於蝕刻阻止膜 102與間隔物膜103之間。 接著,將參考圖10八至100、圖11入至110、及圖12八及 12B來詳細說明電容式麥克風2之一製造方法,各圖係顯示 一單晶片區域之一斷面圖,其中可適當設計用於連接一信 5虎處理電路(未顯示)至固定電極及振動電極之觸點,故未 124466.doc -26- 200826717 作顯示。 。在圖HU所示之_第—步財,在由單晶梦所組成之晶 ^ 1 〇7上形成儀刻阻止膜102。㈣阻止臈102係一由Si0: 成的〆、彳、絕緣屬性之犧牲層,其係用以在深rie中執 行端點控制。接著,將傳導膜⑽形成於㈣阻止膜ι〇2 上。例如,傳導膜108係由-金屬膜或一多晶石夕膜組成, 其係經過分解CVD’摻雜諸如磷(p)之雜質,並經過退 火。 在圖10B所示之一第二步驟中,將光阻光罩之圖案轉 移至傳^膜1〇8,從而形成隔膜16之輪廓與該等彈簧19之 輪廓’其係均使用傳導膜1 〇8來形成。 在圖1〇<:所不之一第三步驟中,將一間隔物膜1〇3形成於 蝕刻阻止膜102與傳導膜ι〇8上方。將光阻光罩2〇3之圖案 轉移至間隔物膜1 〇3,從而在間隔物1 中形成孔3〇4。孔 304係用於形成間隔物1〇並實質上形成一環狀,其一規定 部分係切除以形成狹縫1〇〇。間隔物1〇3係藉由重複執行實 現Si〇2細薄沈積之CVD及退火而形成一所需厚度。藉助蝕 刻,孔304穿過間隔物膜1〇3以到達傳導膜1〇8,傳導膜1〇8 因而部分曝露。順便提及,蝕刻可在孔3〇4基底部分到達 傳導膜108之前停止,從而未曝露傳導膜1〇8。此可排除圖 11A所示之後處理步驟。 孔304不一定藉助光阻圖案化及蝕刻來形成;即其可藉 由使用(例如)奈米壓印技術來形成。 在圖10D所示之一第四步驟中,將絕緣膜1〇6形成於間隔 124466.doc -27- 200826717 物膜103上。在下列步驟中移除絕緣膜1()6,從而使間隔物 10及隔膜16相互隔離。例如,絕緣膜1〇6係由經過的 S i Ο 2組成。 在圖11A所示之一第五步驟中,將絕緣膜1〇5形成於間 物膜106上。絕緣膜105係由一規定材料組成,該材料與間 隔物膜103及絕緣膜1〇6具有蝕刻選擇性。例如,絕緣膜 105係藉由重複執行分解CVD及退火來形成一所需厚度。、 在圖11B之一第六步驟中,將光阻光罩2〇4之圖案轉移至 絕緣膜105,從而移除絕緣膜1〇5之不需要部分。 在圖11C所示之一第七步驟中,部分移除絕緣膜1〇5,接 著形成傳導膜104以部分覆蓋絕緣膜1〇5之上表面並覆蓋絕 緣膜106之曝露區域。將一光阻光罩21〇之圖案轉移至傳導 膜104,從而形成平板12(其係使用傳導膜1〇4來形成)之圓 周輪廓。傳導膜104係由一金屬膜或該多晶矽膜所組成, 其係經過分解CVD,摻雜諸如磷(p)之雜質,並經過退 火。 在圖11D所不之-第八步驟中,將光阻光罩211之圖案轉 移至傳導膜104與絕緣膜1〇5,從而形成平板以之該等聲孔 11(其係使用傳導膜104來形成)。明確而言,該等聲孔丨“系 藉助各向異性乾式蝕刻來形成。 在圖12A所示之第九步驟中,將一光阻光罩212形成於晶 圓107後側,接著晶圓107經過深RIE,以便形成腔15。 在圖12B所示之第十步驟中,絕緣膜1〇5係用作一蝕刻阻 止膜,以便供應一蝕刻劑至該等聲孔u及腔15内,從而藉 124466.doc • 28 - 200826717 助濕式飯刻來移除蝕刻阻止膜102、間隔物膜103及絕緣膜 106中的不需要部分。 最後’將晶圓107分成個別片。因而,可完成圖9所示之 電谷式麥克風2之產生。U: is formed in the annular region, and the springs are interconnected to the circumferential end of the diaphragm such that the diaphragm is bridged across the inner region of the wall via the springs. The peripheral end of the diaphragm contacts the open edge of the slot when no bias voltage is applied. Due to λ, a balance can be established between the acoustic air space and the non-acoustic space defined by the wiring portion by means of a passage defined by the partition, the baffle and the wall. Applying a bias voltage: the inner portion of the diaphragm defined within the contact position of the spacers is near the plate; due to the rigidity of the diaphragm, the barrier is defined externally at the location of the spacers The outer portion (or the peripheral portion) is adjacent to the 124466.doc • 23 - 200826717; and the perimeter of the diaphragm is connected to the edge of the opening of the acoustic* knife plate. Degree, wherein the diaphragm vibrates due to the width of the channel between the sound waves 1 and . Therefore, effects similar to those of the first embodiment are provided. For example, in the first embodiment, the spacers may modify the first embodiment. The plate is connected to the helium diaphragm / 4 spacers that are not connected to the flat membrane to the "Hai" membrane. In this modification, the diaphragm is adjacent to the plate when pressure is applied such that the opposite portion of the interconnect portion of the biasing electrical equal spacer contacts the plate. Here, due to the rigidity of the diaphragm, the outer portion of the diaphragm outside the spacer, the item μ, is adjacent to the baffle, and the peripheral portion of the septum/丨 initial win is in contact with the baffle. The open edge of the baffle. Incidentally, for example, spacers such as (4) may be further stepped so that they are isolated from and connected to the flat plate and the diaphragm. Next, a condenser microphone 2 modified in accordance with one of the first embodiment will be described in detail. 8A, 8B, and 8C are schematic cross-sectional views showing the configuration of the condenser microphone 2, and the film laminate structure is not specifically described, and the same portions as those shown in Figs. 1, 1 and 1C are the same. The number is specified; therefore, the repeated description is omitted. The cutting planes of Figs. 8A and 8B are perpendicular to the surface of the flat plate 12, and the cutting plane of Fig. 8C is parallel to the surface of the plate 12. Figure 8C shows the membrane 16 as seen from the plate 丨2杳. Specifically, FIG. 8A is a cross-sectional view taken along line A to A of FIG. 8C, and FIG. 8B is a cross-sectional view taken along line B to B of FIG. 8C. 0 124466.doc -24-200826717 In the patent-pending language towel, the wall may be defined as a collection of walls 8, a substrate 14 and an outer portion of the panel 12 externally such that it encompasses the non-acoustic space as well as the diaphragm 16, spacer 10 and wiring portion 17. 8 to 8C, this modification is different from FIG. 8 to 1 (the first embodiment shown is that the spacer 10 is substantially in a ring at a position outside the outermost acoustic hole). For example, the width of the spacer 1 测量 measured in the radial direction is 4 μηι. ('The slit 100 used as the gap is formed in the annular spacer 10. The slit 100 forms a 4 The width of the μιη and the height of a 4 μηι. The cutoff frequency depends on the shape of the slit 1 , wherein the slit 100 having the aforementioned dimensions achieves a cutoff frequency of about 3 ,, which is close to the lower limit of the audio frequency range. The overall operation of the condenser microphone 2. When a bias voltage is applied, the diaphragm 16 moves closer to the plate 12, wherein the annular peripheral portion of the diaphragm 16 contacts the spacer 1〇. Figure 8 shows that the diaphragm 16 4 is indicated by a broken line. Contact spacer 1 声. The acoustic wave is transmitted through the acoustic aperture of the plate i 2 so that I; reaches the diaphragm 16, so that it vibrates due to sound waves. When the diaphragm 16 partially contacts the spacer 10, the diaphragm 16 of the proximity wiring portion 17 Defining non-acoustic space The shell is isolated from the acoustic space except for the defined space corresponding to the spacer 10. Since it is difficult to make the acoustic wave (which is the detected object) enter the non-acoustic space defined by the diaphragm 丨6, the accidental deterioration of the capacitive type can be prevented. Sensitivity of the microphone 2. When a bias voltage is not applied, the diaphragm 16 does not contact the spacer 1〇, so that no air pressure difference is established between the acoustic space and the non-acoustic space divided by the diaphragm 16. Even if the bias voltage is applied Applied to the condenser microphone 2, a balance can be established between the air pressure of the non-acoustic space 124466.doc -25-200826717 and the atmospheric pressure by means of the slit 1 间隔 of the spacer 1 。. This prevents the diaphragm 16 from being The air pressure is poor and accidentally destroyed. In addition, the sensitivity of the condenser microphone 2 can be prevented from deteriorating due to the air pressure difference. The number of the slits 100 can be appropriately determined as long as the cutoff frequency remains outside the audio frequency range. A plurality of slits 100 are formed in the object 10. In this case, it is preferably formed at a predetermined position other than the spacer i (for example, regarding the diaphragm 16). An additional gap is provided to establish a balance between the non-acoustic, spatial air pressure and atmospheric pressure. Figure 9 is a cross-sectional view showing an example of a film laminate structure forming a condenser microphone 2. The wafer 1 is formed of a single crystal germanium. The wall 8 is composed of an etching stopper film 1 and a spacer 103 for forming a gap between the separator 16 and the flat plate 12, and a spacer 1 is formed. The insulating film 1 is composed of 〇5, etc. The flat plate 12 is formed using a conductive film 1〇4 to form the fixed electric r and the electrode. The conductive film 104 is bonded to the insulating film 105 for forming the wall 8. The spacer 10 is an insulating film. Formed by 105. The diaphragm 16 and the springs 19 are formed using a conductive film 1 〇 8 which is also used to form the vibrating electrode. The conductive film 108 is bonded between the etching stopper film 102 and the spacer film 103. Next, a method of manufacturing the condenser microphone 2 will be described in detail with reference to FIGS. 10 to 100, FIG. 11 to 110, and FIGS. 12 and 12B, each of which shows a sectional view of a single wafer region, wherein Appropriately designed to connect a letter 5 tiger processing circuit (not shown) to the fixed electrode and the contact of the vibrating electrode, so it is not shown in 124466.doc -26-200826717. . In the first step shown in Fig. HU, an etch stop film 102 is formed on the crystal ^ 1 〇 7 composed of a single crystal dream. (4) The 臈102 is a sacrificial layer of 〆, 彳, and insulating properties of Si0: which is used to perform endpoint control in deep rie. Next, a conductive film (10) is formed on the (four) blocking film ι 2 . For example, the conductive film 108 is composed of a -metal film or a polycrystalline film which is doped with impurities such as phosphorus (p) by decomposition CVD' and is annealed. In a second step shown in FIG. 10B, the pattern of the photoresist mask is transferred to the film 1 〇 8 to form the contour of the diaphragm 16 and the contour of the springs 19, both of which use the conductive film 1 〇 8 to form. In the third step of Fig. 1 <: none, a spacer film 1〇3 is formed over the etching stopper film 102 and the conductive film 〇8. The pattern of the photoresist mask 2〇3 is transferred to the spacer film 1 〇3, thereby forming the holes 3〇4 in the spacer 1. The hole 304 is for forming a spacer 1 〇 and substantially forming a ring shape, a prescribed portion of which is cut to form a slit 1 〇〇. The spacers 1〇3 are formed to a desired thickness by repeatedly performing CVD and annealing to effect fine deposition of Si〇2. By means of the etching, the holes 304 pass through the spacer film 1〇3 to reach the conductive film 1〇8, and the conductive film 1〇8 is thus partially exposed. Incidentally, the etching can be stopped before the substrate portion of the hole 3〇4 reaches the conductive film 108, so that the conductive film 1〇8 is not exposed. This eliminates the post-processing steps shown in Figure 11A. Holes 304 are not necessarily formed by photoresist patterning and etching; that is, they can be formed using, for example, nanoimprint techniques. In a fourth step shown in Fig. 10D, an insulating film 1?6 is formed on the film 103 of the space 124466.doc -27-200826717. The insulating film 1 () 6 is removed in the following steps to isolate the spacer 10 and the separator 16 from each other. For example, the insulating film 1〇6 is composed of the passed S i Ο 2 . In a fifth step shown in Fig. 11A, an insulating film 1?5 is formed on the film 106. The insulating film 105 is composed of a predetermined material having an etching selectivity with the spacer film 103 and the insulating film 1?6. For example, the insulating film 105 is formed to a desired thickness by repeatedly performing decomposition CVD and annealing. In a sixth step of Fig. 11B, the pattern of the photoresist mask 2〇4 is transferred to the insulating film 105, thereby removing unnecessary portions of the insulating film 1〇5. In a seventh step shown in Fig. 11C, the insulating film 1〇5 is partially removed, and then the conductive film 104 is formed to partially cover the upper surface of the insulating film 1〇5 and cover the exposed region of the insulating film 106. A pattern of a photoresist mask 21 is transferred to the conductive film 104, thereby forming a circular contour of the flat plate 12 (which is formed using the conductive film 1〇4). The conductive film 104 is composed of a metal film or a polycrystalline germanium film which is subjected to decomposition CVD, doped with impurities such as phosphorus (p), and is annealed. In the eighth step of FIG. 11D, the pattern of the photoresist mask 211 is transferred to the conductive film 104 and the insulating film 1〇5, thereby forming a flat plate with the acoustic holes 11 (which are used by the conductive film 104). form). Specifically, the acoustic apertures are formed by anisotropic dry etching. In the ninth step shown in FIG. 12A, a photoresist mask 212 is formed on the back side of the wafer 107, followed by the wafer 107. After deep RIE, to form the cavity 15. In the tenth step shown in FIG. 12B, the insulating film 1〇5 is used as an etch stop film to supply an etchant into the acoustic holes u and the cavity 15, thereby Borrowing 124466.doc • 28 - 200826717 A wet-assisted meal is used to remove unnecessary portions of the etch stop film 102, the spacer film 103, and the insulating film 106. Finally, the wafer 107 is divided into individual pieces. The generation of the electric valley microphone 2 shown in FIG.
可採用各種方式進一步修改電容式麥克風2。即,電容 式麥克風2不一定設計使得隔膜16係定位於基板14與平板 12之間。相反’可以一方式重新設計電容式麥克風2,使 得平板12係定位於基板14與隔膜16之間。 此外,間隔物10不一定連接至平板12 ;即,間隔物1〇可 連接至隔膜16而非平板。此外,間隔物10可與平板12及 隔膜16隔離,其中其可連接至壁8。 最後,可在隨附申請專利範圍所界定之本發明之範疇内 進一步修改該第一具體實施例及其變更。特定言之,可適 备決疋適用於該等前述製造方法之膜成分、膜形成方法、 膜輪廓形&方法及該等製造程4,視膜材料組合、膜厚 度、及所需輪廓形成精度,其均係實現適應該等電容式麥 克風之所需實體屬性的多個因素;因此,其係非限制性 的0 2 ·第二具體實施例 接著,將依據本發明之一第二具體實施例來詳細說明一 電容式麥克風1001。圖13A及13B係概略性顯示電容式麥 克風10G1之基本部分之斷面圖。電容式麥克風刪係一晶 月’其中複數個薄膜係沈積在一由石夕所組成之基板(或一 檔板)ΗΠ6且囊封於—由—佈線基板與—蓋子(:者均未顯 124466.doc •29- 200826717 示)所構成之封裝内。 一牙透孔H4係形成以穿過基板1016。穿透孔H4之一開 口 1161形成一後腔bc之一開口,後腔bc係由該佈線基板 (未顯示)來封閉。 將一第一間隔物膜1015沈積在基板1〇16之表面上並使用 (例如)一由Sl〇2所組成之絕緣膜來形成。一圓形穿透孔H3 係形成以穿過第一間隔物膜101 5。 f , 將一隔膜電極膜1014沈積在第一間隔物膜1015之表面且 係使用一傳導膜來形成,該傳導膜摻雜有諸如磷(P)之雜 質並由(例如)多晶矽所組成。 將一第二間隔物膜1013沈積在隔膜電極膜1014之表面上 並使用(例如)一由Si02所組成之絕緣膜來形成。一圓形穿 透孔H2係形成以穿過第二間隔物膜1〇13。 將一板電極膜1012沈積在第二間隔物膜1〇13之表面且其 係使用一傳導膜來形成,該傳導膜摻雜有諸如磷之雜 (J 夤並由(例如)多晶石夕所組成。一在一拉伸方向上所施加之 内。卩應力(以下簡稱為一拉伸應力)仍保留於板電極膜丨〇 i 2 内。 將一壓縮膜1011沈積在板電極膜1012之表面上並使用一 由(例如)Si〇2所組成之絕緣膜來形成。一在一壓縮方向上 所%加之内部應力(以下簡稱為一壓縮應力)仍保留於壓縮 膜1011内。 圖13C係顯示電容式麥克風1〇〇1之基本部分之一平面 圖。 124466.doc 30- 200826717 一平板U1G係由其周邊部分接合第二間隔物膜H)13之板 電極膜1G12所組成’其中板電極膜1()12橫跨第二間隔物膜 1〇13來橋接,以便封閉穿透細。將複數個穿透孔m(用 作-弟-穿透孔)形成於平板111()内。平板iug之輪廊取決 於穿透孔H2之輪扉’其中無特定限制應用至平板⑴〇之形 狀,只要平板mo具有一相對於一隔膜112〇而定位的相對 較大區域,並且平板111〇具有足夠剛性以對抗其偏斜。一 觸點1112係連接至平板1110,以便為其建立佈線。 一位於平板1110與隔膜1120之間的第一間隙⑴係藉由在 第二間隔物膜1013中形成穿透孔H2來實現。第一間隙G1 回應懸臂lloo偏斜而增加,同時在隔膜1120接觸基板1〇16 時其係固定設定至一恆定距離。第一間隙G1經由穿透孔 Η1及狹縫S而與一大氣空間相通。 如圖13Α所示,該等懸臂11〇〇係各由板電極膜1〇12與壓 縮膜1011構成並各經由板電極膜1012内所形成之該等狹縫 S而與平板1110隔離。該等懸臂11〇〇之基底部分接合第二 間隔物膜1013,使得該等懸臂1100向第二間隔物膜1013之 穿透孔Η2之中心内部突出。該拉伸應力仍處於接近隔膜電 極膜1014而定位的板電極膜1012内,而該壓縮應力仍處於 遠離隔膜電極膜1014而定位之壓縮膜1011内。因此,該等 懸臂1100以一方式向基板10 16下壓隔膜1120,使得位置固 定其基底部分之該等懸臂11〇〇之末梢端部朝隔膜1120而向 下偏斜。 突出物1101係形成於向隔膜1120突出的該等懸臂11〇〇之 124466.doc -31 - 200826717 末梢端部内,並接觸隔膜1120。該等突出物11〇1之高度小 於第二間隔物膜1013之厚度,該第二間隔物膜介入於隔膜 電極膜1014與板電極膜1012之間。由於該等懸臂11〇〇之偏 斜(取決於其内部應力),該等突出物11〇1之末梢端部向接 觸隔膜1120之基板1016下壓隔膜1120。該等突出物11〇1可 使用隔膜電極膜1014來形成。或者,其可使用接合隔膜電 極膜1014之另一沈積膜來形成。此外,該等突出物11〇1各 具有一絕緣屬性或一傳導屬性。 (\ 、 為了將δ亥專懸臂11 〇 〇偏向隔膜112 〇,較佳的係懸臂11 〇 〇 之内部應力在厚度方向上變化,即懸臂丨丨〇〇之壓縮應力向 隔膜1120在厚度方向上變小。該第二具體實施例之電容式 麥克風1 00 1係設計使得該等懸臂i i 〇〇之各懸臂具有一由二 膜構成的雙層結構,其中為了在厚度方向上改變内部應 力,較佳的係有意施加壓縮應力至遠離隔膜1120而定位的 膜,並有意施加拉伸應力至靠近隔膜i 120而定位的膜。即 便懸臂1100具有一由一單膜所構成之單層結構,可控制懸 臂1100之内部應力,使得藉由在膜沈積期間適當改變膜形 成條件,在表面内增加壓縮方向之内部應力。該壓縮方向 之内部應力可能在膜沈積期間未改變膜形成條件而在表面 内增加。即,壓縮方向之内部應力在膜表面内增加,其係 藉助沈積原位摻雜磷之多晶矽,藉由增加該摻雜物,藉由 在沈積多晶矽之後在表面上執行離子植入磷或藉由在多晶 石夕沈積之後在表面上執行燈退火來形成。可能僅由於拉伸 方向之内部應力而使懸臂1100偏向隔膜1120。在此情況 124466.doc -32- 200826717 下’必需以一方式形成一形成懸臂1100之沈積膜,使得拉 伸應力在厚度方向上向隔膜1120增加。 圖14B係顯示隔膜電極膜1〇14之一圖案之一平面圖。隔 膜電極膜1014包括隔膜1120、複數個互連部分1121,用於 使隔膜1120橫跨第一間隔物膜1〇15而橋接、一保護電極 1130、及觸點1131及1124。隔膜電極膜1〇14係使用一傳導 膜形成,其係由以〇2組成且其摻雜諸如磷(P)之雜質。隔膜 1120之輪廓環抱形成於基板1016内的後腔BC之一開口 1161 °即’後腔BC之開口 Π61係覆蓋有隔膜1120。 隔膜1120與保護電極113〇隔離,其中隔膜112〇與保護電 極1130分離之一間隙的一部分形成一空氣孔(稱為一第二 空氣孔)1122。在圖14B中,空氣孔1122係使用陰影線來說 明。由於空氣孔1122形成於後腔bc之開口 1161外面,故在 隔膜1120之周邊端部與基板1〇16之開口邊緣之間形成一第 一間隙G2(參見圖13)。第二間隙G2與後腔Bc &空氣孔 1122相通。即,後腔BC經由第二間隙G2、空氣孔、 第一間隙G1、及穿透孔HI而與大氣空間相通。在第二間 隙G2中,空氧孔1122、第一間隙g 1、及穿透孔η 1、第二 間隙G2具有最高聲阻。可藉由減小第二間隙G2(或藉由減 小該等互連部分1121之突出物1123之高度或藉由放大在平 面圖内隔膜1120之周邊端部與基板1〇16之開口邊緣之間的 重疊區域)來增加第二間隙仍之聲阻,從而特別改良在低 頻範圍内的靈敏度。 — 如圖13A及13B所示,該等互連部分1121係從具有一圓 124466.doc • 33 - 200826717 形形狀之隔膜1120之外部圓周向外伸長。隔膜112〇係經由 互連。卩分1121而連接至觸點1124。由於該等互連部分1121 之末梢端部接合第一間隔物膜1 〇 1 5,故隔膜丨丨2〇橫跨穿透 孔H3來橋接。該等互連部分丨12丨之輪廓已彎曲成帶狀;因 此,在隔膜1120之一徑向方向上,在彈性模數上減小該等 互連部分1121。因此,施加至對應於隔膜112〇之隔膜電極 膜1014之中心部分的内部應力係藉助互連部分1121來加以 (,: 釋放。此增加隔膜1120在壓力下的位移;因此,可能增加 在所有頻率範圍内的靈敏度。 如圖13A所示,隔膜U20具有該等突出物1123,其朝基 板1016向下犬出。该荨突出物1123係使用隔膜電極膜low 或另一接合隔膜電極膜1014之沈積膜來形成。使隔膜112〇 之該等突出物1123之末梢端部接觸基板1〇16之表面。由於 提供該等突出物1123,在隔膜112〇與基板1〇16之間恆定地 維持第二間隙G2相同尺寸。順便提及,在平面圖内,隔膜 Ο 1120之該等突出物1123可重疊該等懸臂1100之該等突出物 1101 ’或在平面圖内其不相互重疊。 接著,將詳細說明電容式麥克風1001之一製造方法。電 • 今式麥克風1001係藉助半導體器件處理技術來製造。明確 而5,將複數個薄膜依序沈積在基板1016(由一塊狀材料 組成);且間隙係藉助蝕刻或剝離技術來加以適當形成; 因而’可形成如圖13A至13C所示之結構。 圖14A係概略性顯示在製程期間電容式麥克風ι〇〇ι之一 中間結構之-縱向斷面圖。此處,將第一間隔物膜1〇15、 124466.doc •34· 200826717 隔膜1014、第二間隔物膜1013、板電極膜1〇12、及壓縮膜 1011依序形成於基板1016上,其中使隔膜電極膜1〇14、板 電極膜1012及壓縮膜ion經過圖案化。藉助深RIE將穿透 孔H4形成於基板1〇16内。在使用一光阻保護壓縮膜⑺^之 後,藉助各向異性蝕刻來選擇性移除第一間隔物膜1〇15與 第二間隔物膜1013,從而形成圖13a至13C所示之電容式 麥克風1001。第一間隔物膜1〇15之穿透孔^^之形狀與第二 間隔物膜1〇13之穿透孔H2之形狀取決於基板1〇16之開口 1161之形狀、板電極膜丨〇丨2之穿透孔H1之形狀及狹縫s之 形狀。 A等大出物1123可以一方式形成,使得在第一間隔物膜 1015内形成凹陷(其係直接形成於其下),接著與隔膜電極 膜1014起肷入。或者’將該等凹陷與除隔膜電極膜1〇14 外的另一具有一絕緣屬性或一傳導屬性之沈積膜一起嵌 入;藉助平面製程來移除從該等凹陷伸出的該沈積膜之規 疋σ卩刀’接著’使隔膜電極膜1 0 14經過沈積。類似地,可 使用凹陷來形成該等突出物11〇1,該等凹陷係形成於第二 間隔物膜1 0 1 3内(其係直接形成於其下面)。 在圖14Α中’在厚度方向上將不同内部應力施加在板電 極膜1012之規定部分與壓縮膜1〇11之規定部分,該等規定 部分係用於形成懸臂i 1〇〇。即,一強烈壓縮應力出現於壓 縮膜ion内’而不是在接近隔膜電極膜1〇14而定位之板電 極膜1012内。由此,由於形成第一間隔物膜1015之穿透孔 H3與第二間隔物膜1〇 13之穿透孔H2,將懸臂11〇〇之末梢 124466.doc -35- 200826717 知邻偏向隔膜1120,使得突出物u 〇丨(其接觸隔膜112〇)將 隔膜1120向基板1〇16壓下。此舉增加隔膜112〇與平板111〇 之間的第一間隙G1,同時減小隔膜丨12〇與基板1〇16之間的 第一間隙G2。此時,具有一彎曲帶形狀之互連部分 u21(其係形成於隔膜電極膜1〇14内)係在隔膜112〇之一徑 向方向上擴展;因此,隔膜1120之内部應力不會在張力方 向上增加,而會減小。當隔膜112〇之該等突出物1123之末 梢端部接觸基板1 〇 16時,形狀上穩定該等懸臂i i 〇〇與該等 互連部分1121,如圖13A及13B所示。 在大氣空間與後腔BC之間存在的空間内,實現最大聲 阻之第二間隙G2取決於隔膜1120之該等突出物1123之高 度。第二間隙G2之水平寬度(位於隔膜112〇之徑向方向上) 取決於從後腔BC之開口 1161水平伸出的隔膜Π20之伸出部 分之寬度。在低頻範圍内的電容式麥克風100丨之靈敏度取 決於第二間隙G2與後腔BC之體積。 在本具體實施例中,第二間隙G2(其決定在低頻範圍内 電容式麥克風1001之靈敏度)小於正好在將隔膜電極膜 1014沈積在第一間隔物膜1〇15上之後的隔膜1120與基板 1016之間的距離。此外,由於該等懸臂1100變形,故在電 容式麥克風1001内與額定壓力及抗機械振動穩定性相關的 第一間隙Gl(在隔膜1120與平板111〇之間)變得大於第二間 隔物膜1013之厚度。換言之,本具體實施例使用該等沈積 膜之内部應力用於設定該等前述間隙目的;因此,可適當 增加第一間隙G1 ’同時減小第二間隙G2。即,本發明能 124466.doc -36- 200826717 夠改良在低頻範圍内的靈敏度,增加額定壓力,並改良抗 機械振動穩定性。由此,可在電容式麥克風1〇〇1内在靈敏 度與穩定性之間建立一高位準平衡。 可採用各種方式進一步修改該第二具體實施例之電容式 麥克風1001 ;因此,將參考15八至15C、16、17、18A至 18C、19及20A至20B來說明該第二具體實施例之變更,其 中與圖13A至13C及圖14A至14B中所示之該等部分相同的 部分係指定相同參考數字;因此,將省略其重複說明。 圖15A及15B係顯示關於第二間隙G2形成之一第二具體 實施例變更的斷面圖;而圖16及17係顯示實現形成圖15A 及15B所不之第二間隙G2之隔膜電極膜1〇14之變更的平面 圖。圖15A及15B顯示切割平面,其係關於沿圖13(:中的線 1A至1A及1B至1B所截取之圖13A及13B而作說明。如圖 15A至15B、16及17所示,可使用通道1125形成第二間隙 G2,該等通道係在其徑向方向上從隔膜112〇之周邊部分向 内伸長。可如圖Μ所示減小該等通道1125之寬度,或其可 如圖17所不來放大。即,可在形狀及尺寸上適當設計該等 通道1125 ’以便實現一所需聲阻。該等通道1125之第一端 部與空氣孔1122相通,而其第二端部與後腔BC之開口 1161 相通。第二間隙G2取決於該等通道丨丨25之深度。在如圖 15C所不沈積隔膜電極膜1〇14之前,對應於該等通道 1125 ’將一犧牲膜1〇 17形成於基板1〇16上,從而實現該等 通道1125之形成。較佳的係犧牲膜1〇17由一規定材料組 成,該材料可與第一間隔物膜1〇15與第二間隔物膜1〇13一 124466.doc •37- 200826717 起同時加以ϋ刻。 圖18Α及18Β係顯示與形成第二間隙(32相關的第二具體 實施例變更之斷面圖。圖19係顯示隔膜電極膜1〇14之一平 面圖,其實現形成圖18A及18B所示之第二間隙G2。圖18A 及18Β顯示切割平面,其係關於沿圖13c中線丨八至丨八及⑺ 至1B所截取之圖13A及13B而作說明。如圖18A至18B及圖 > 19所示,可使用通道1165形成第二間隙G2,該等通道係在 ( 基板1 〇 1 6之開口邊緣處從開口 1161外部伸長。該等通道 1165之第一端部與空氣孔1122相通,而其第二端部與後腔 BC之開口 1161相通。第二間隙G2取決於該等通道丨丨“之 深度。如圖18C所示,在形成第一間隔物膜1〇15之前,在 基板1016内形成該等通道n 65並與一犧牲膜1〇18 一起嵌 入。較佳的係犧牲膜1 〇 1 8由一規定材料組成,該材料可與 第一間隔物膜1015與第二間隔物膜1〇13一起同時加以蝕 刻。 Ο 圖2〇Α及2〇Β係顯示與形成第一間隙G1及第二間隙〇2相 關的另一第二具體實施例變更之斷面圖。圖2〇A及2〇b顯 - 示切割平面,其係關於沿圖13C中的線1A至1A所截取之圖 3A而作说明。如圖2〇a,該等突出物11〇1與隔膜“Μ整 體形成,其中使該等突出物11 〇 1之末梢端部接觸該等懸臂 1100,以便決定第一間隙G1之尺寸。此外,該等突出物 ^23與基板1〇16整體形成,其中使該等突出物ιΐ23之末梢 端邛接觸隔膜Π2〇,以便決定第二間隙G2之尺寸(參見圖 13B)。換言之,可使用後側接合基板1〇16之一沈積臈來形 124466.doc -38- 200826717 成該等突出物1123。或者,如圖2〇B所示,不一定相對於 該等懸臂1100與隔膜112〇形成突出物。 而且,平板1110與隔膜112〇可各自形成於一部分具有一 絕緣屬性之單層結構内或一在第二及其他層内具有一傳導 屬f生之夕層結構内。平板111〇與隔膜丨12〇各不一定形成一 圓形形狀並可形成一矩形形狀。該等懸臂11〇〇可使用除了 板電極膜10 12外的另一層來形成,例如一形成於板電極膜 f 1012與隔膜電極膜1014之間的沈積膜。 最後,本發明不一定限於該等第一及第二具體實施例及 其變更;因此,可在隨附申請專利範圍所界定之本發明之 範疇内實現其他變更及修改。 【圖式簡單說明】 已參考以下圖式更詳細地說明本發明之該些及其他目 的、方面及具體實施例,其中: 圖1A係沿圖1C中線A-A所截取之一縱向斷面圖,其顯示 依據本發明之一第一具體實施例之一電容式麥克風之構 造; 圖1B係沿圖1C中線B至B所取之一縱向斷面圖; 圖1C係沿圖1A及1B中線C至C所截取之一橫向斷面圖; 圖2係概略性顯示一隔膜相對於一平板而振動並接觸間 隔物之一縱向斷面圖; 圖3係顯示形成圖1A至1C所示電容式麥克風之一膜層壓 結構範例之一部分斷面圖; 圖4A係用於解釋該電容式麥克風之一製造方法之一第— 124466.doc -39- 200826717 步驟之一斷面圖; 圖4Β係用於解釋該電容式麥克風製造方法之一筮一止 〜弟一步驟 之一斷面圖; 圖4C係用於解釋該電容式麥克風製造方法之一笙一止 乐二步驟 之一斷面圖; 圖4D係用於解釋該電容式麥克風之製造方法之一第四+ 驟之一斷面圖; 圖5 Α係用於解釋該電容式麥克風製造方法之一笛 Ο ϋ 乐立步驟 之一斷面圖; 圖5B係用於解釋該電容式麥克風製造方法之一第六步驟 之一斷面圖; 圖5C係用於解釋該電容式麥克風製造方法之一第七步驟 之一斷面圖; 圖6 A係用於解釋該電容式麥克風製造方法之一第八步驟 之一斷面圖; 圖6B係用於解釋該電容式麥克風製造方法之一第九步驟 之一斷面圖; 圖7A係用於解釋該電容式麥克風製造方法之一第十步驟 之一斷面圖; 圖7B係用於解釋該電容式麥克風製造方法之一第十—系 驟之一斷面圖; 圖8A係沿圖8C中線A至A所截取之〆縱向斷面圖,复 示依據本發明之一第一具體實施例變更之一電容式麥克風 之構造; 124466.doc -40· 200826717 圖8B係沿圖8C中線B至B所截取之一斷面圖; 圖8C係沿圖8A及8B中線C至C所截取之一橫向斷面圖; 圖9係顯示形成圖8A至8C所示電容式麥克風之一膜層壓 結構範例之一部分斷面圖; 圖10A係用於解釋該電容式麥克風之一製造方法之一第 一步驟之一斷面圖; 圖10B係用於解釋該電容式麥克風製造方法之一第二步 驟之一斷面圖; 圖10C係用於解釋該電容式麥克風製造方法之一第三步 驟之一斷面圖; 圖10D係用於解釋該電容式麥克風之製造方法之一第四 步驟之一斷面圖; 圖11A係用於解釋該電容式麥克風製造方法之一第五步 驟之一斷面圖; 圖11B係用於解釋該電容式麥克風製造方法之一第六步 驟之一斷面圖; 圖lie係用於解釋該電容式麥克風製造方法之一第七步 驟之一斷面圖; 圖11D係用於解釋一第八製造步驟之一斷面圖; 圖12A係用於解釋該電容式麥克風製造方法之一第九步 驟之一斷面圖; 圖12B係用於解釋該電容式麥克風製造方法之一第十步 驟之一斷面圖; 圖13A係沿圖i3C中線1A至1A所裁取之一斷面圖,其顯示 124466.doc -41 - 200826717 依據本發明之一第二具體實施例之—電容式麥克風之構 造; 圖13B係沿圖13C中線1B至1B所截取之一斷面圖; 圖13C係圖13 A及13B中所不之電容式麥克風内所包括之 一平板之一平面圖; 圖14 A係概略性顯不該電容式麥克風之一中間構造之一 縱向斷面圖; 圖14B係顯示形成該電容式麥克風之一隔膜之隔膜電極 膜圖案之一平面圖; 圖15 A係顯不依據第-一具體實施例變更之一電容式麥克 風之構造之一斷面圖; 圖15B係顯示圖15A所示之電容式麥克風構造之一斷面 圖; 圖15C係顯示實現形成圖15B所示通道的_膜層壓結構 之一斷面圖; 圖16係圖15A及15B中所示之電容式麥克風内所包括之 一隔膜之一平面圖; 圖17係顯示圖15 a及15B所示之電容式麥克風内所包括 之隔膜電極膜圖案之一平面圖; 圖18 A係顯不依據第二具體實施例之另一變更之一電容 式麥克風之構造之一斷面圖; 圖18B係顯示圖18A所示之電容式麥克風構造之一斷面 圖; 圖18C係顯示實現形成圖18B所示通道的一膜層歷結構 124466.doc -42- 200826717 之一斷面圖; 圖19係顯示圖18A及18B所示之電容式麥克風内所包括 之一隔膜電極膜之圖案之一平面圖; 圖20A係顯示依據第二具體實施例之另一變更之一電容 式麥克風之構造之一斷面圖; 圖20B係顯示依據第二具體實施例之另一變更之一電容 式麥克風之構造之一斷面圖。 【主要元件符號說明】 1 電容式麥克風 2 電容式麥克風 8 環狀壁 9 開口邊緣/基板14之内端 10 間隔物 11 聲孔 12 平面 13 支撐件 14 基板 15 腔 16 隔膜 17 佈線部分 19 彈簧 102 #刻阻止膜 103 間隔物膜 104 傳導膜 124466.doc 43- 200826717 105 絕緣膜 106 絕緣膜 107 晶圓 108 傳導膜 201 光阻光罩 202 光阻光罩 * 203 光阻光罩 204 光阻光罩 c 205 光阻光罩 206 光阻光罩 208 光阻光罩 210 光阻光罩 211 光阻光罩 212 光阻光罩 301 小凹坑 g 302 小凹坑 304 子L 306 1001 電容式麥克風 1011 壓縮膜 1012 板電極膜 1013 第二間隔物膜 1014 隔膜電極膜 1015 第一間隔物膜 124466.doc -44· 200826717The condenser microphone 2 can be further modified in various ways. That is, the condenser microphone 2 is not necessarily designed such that the diaphragm 16 is positioned between the substrate 14 and the flat plate 12. Conversely, the condenser microphone 2 can be redesigned in a manner such that the plate 12 is positioned between the substrate 14 and the diaphragm 16. Further, the spacer 10 is not necessarily connected to the flat plate 12; that is, the spacer 1A can be connected to the diaphragm 16 instead of the flat plate. Additionally, the spacer 10 can be isolated from the plate 12 and the diaphragm 16, wherein it can be coupled to the wall 8. Finally, the first embodiment and its modifications are further modified within the scope of the invention as defined by the appended claims. In particular, it is possible to suitably apply the film component, the film forming method, the film profile & method and the manufacturing process 4, the film material combination, the film thickness, and the desired contour formation applicable to the above-described manufacturing methods. Accuracy, which is a plurality of factors that achieve the desired physical properties of the capacitive microphone; therefore, it is not limiting. 2. Second Embodiment Next, a second implementation in accordance with one of the present invention will be For example, a condenser microphone 1001 will be described in detail. 13A and 13B are cross-sectional views schematically showing the essential parts of a capacitive microphone 10G1. The condenser microphone is deleted into a crystal moon, in which a plurality of thin films are deposited on a substrate (or a baffle) 由6 composed of Shi Xi and encapsulated in a wiring substrate and a cover (: none of the 124466 .doc •29- 200826717 shown in the package. A through hole H4 is formed to pass through the substrate 1016. One opening 1161 of the penetration hole H4 forms an opening of a rear cavity bc which is closed by the wiring substrate (not shown). A first spacer film 1015 is deposited on the surface of the substrate 1 to 16 and formed using, for example, an insulating film composed of S1. A circular through hole H3 is formed to pass through the first spacer film 1015. f, a diaphragm electrode film 1014 is deposited on the surface of the first spacer film 1015 and formed using a conductive film doped with impurities such as phosphorus (P) and composed of, for example, polycrystalline germanium. A second spacer film 1013 is deposited on the surface of the diaphragm electrode film 1014 and formed using, for example, an insulating film composed of SiO 2 . A circular through hole H2 is formed to pass through the second spacer film 1〇13. A plate electrode film 1012 is deposited on the surface of the second spacer film 1〇13 and is formed using a conductive film doped with a compound such as phosphorus (J 夤 and by, for example, polycrystalline shi The composition is applied in a direction of stretching. The 卩 stress (hereinafter referred to as a tensile stress) remains in the plate electrode film 丨〇i 2 . A compressed film 1011 is deposited on the plate electrode film 1012. An insulating film composed of, for example, Si〇2 is used on the surface, and an internal stress (hereinafter simply referred to as a compressive stress) in a compression direction remains in the compressed film 1011. Fig. 13C A plan view showing a basic portion of the condenser microphone 1〇〇1. 124466.doc 30- 200826717 A flat panel U1G is composed of a plate electrode film 1G12 whose peripheral portion is joined to the second spacer film H)13. 1() 12 is bridged across the second spacer film 1〇13 to close the penetration fine. A plurality of penetration holes m (used as a brother-penetrating hole) are formed in the flat plate 111 (). The wheel hub of the flat plate depends on the rim of the penetrating hole H2, wherein no specific limitation is applied to the shape of the plate (1), as long as the plate mo has a relatively large area positioned relative to a diaphragm 112, and the plate 111〇 It is rigid enough to resist its deflection. A contact 1112 is attached to the slab 1110 for routing it. A first gap (1) between the flat plate 1110 and the diaphragm 1120 is achieved by forming a penetration hole H2 in the second spacer film 1013. The first gap G1 is increased in response to the deflection of the cantilever lloo, and is fixed to a constant distance when the diaphragm 1120 contacts the substrate 1〇16. The first gap G1 communicates with an atmospheric space via the penetration hole Η1 and the slit S. As shown in Fig. 13A, the cantilever 11 is formed of a plate electrode film 1〇12 and a compression film 1011, and is separated from the plate 1110 via the slits S formed in the plate electrode film 1012. The base portions of the cantilever 11 are joined to the second spacer film 1013 such that the cantilevers 1100 protrude toward the center of the through hole 2 of the second spacer film 1013. The tensile stress is still in the plate electrode film 1012 positioned close to the diaphragm electrode film 1014, and the compressive stress is still in the compression film 1011 positioned away from the diaphragm electrode film 1014. Accordingly, the cantilever 1100 presses the diaphragm 1120 toward the substrate 10 16 in a manner such that the distal end portions of the cantilevered arms 11 that are positioned to secure their base portions are deflected downward toward the diaphragm 1120. The protrusion 1101 is formed in the distal end portion of the cantilever 11 突出 124466.doc -31 - 200826717 which protrudes toward the diaphragm 1120 and contacts the diaphragm 1120. The height of the protrusions 11〇1 is smaller than the thickness of the second spacer film 1013, and the second spacer film is interposed between the diaphragm electrode film 1014 and the plate electrode film 1012. Due to the deflection of the cantilever 11 (depending on its internal stress), the distal end of the projection 11〇1 presses the diaphragm 1120 against the substrate 1016 contacting the diaphragm 1120. These protrusions 11〇1 can be formed using the diaphragm electrode film 1014. Alternatively, it may be formed using another deposited film that bonds the separator electrode film 1014. Furthermore, the protrusions 11〇1 each have an insulating property or a conductive property. (\), in order to deflect the δHai cantilever 11 〇〇 to the diaphragm 112 〇, the internal stress of the preferred cantilever 11 在 varies in the thickness direction, that is, the compressive stress of the cantilever 向 is in the thickness direction of the diaphragm 1120 The condenser microphone 1 00 1 of the second embodiment is designed such that each cantilever of the cantilever ii 具有 has a two-layer structure composed of two films, wherein in order to change the internal stress in the thickness direction, Preferably, the film is intentionally applied with compressive stress to the film positioned away from the diaphragm 1120, and intentionally applies tensile stress to the film positioned adjacent to the diaphragm i 120. Even if the cantilever 1100 has a single layer structure composed of a single film, it can be controlled The internal stress of the cantilever 1100 is such that the internal stress in the compression direction is increased in the surface by appropriately changing the film formation conditions during film deposition. The internal stress in the compression direction may increase in the surface without changing the film formation conditions during film deposition. That is, the internal stress in the compression direction increases in the surface of the film by depositing polycrystalline germanium in situ by deposition, by increasing the dopant by The ion implantation of phosphorus is performed on the surface after depositing the polysilicon or by performing lamp annealing on the surface after the polycrystalline deposition. The cantilever 1100 may be biased toward the separator 1120 only due to the internal stress in the tensile direction. Case 124466.doc -32- 200826717 Next, it is necessary to form a deposited film forming the cantilever 1100 in such a manner that the tensile stress increases toward the diaphragm 1120 in the thickness direction. Fig. 14B shows a pattern of one of the diaphragm electrode films 1? A plan view. The diaphragm electrode film 1014 includes a diaphragm 1120 and a plurality of interconnecting portions 1121 for bridging the diaphragm 1120 across the first spacer film 1〇15, a guard electrode 1130, and contacts 1131 and 1124. The film 1〇14 is formed using a conductive film composed of 〇2 and doped with impurities such as phosphorus (P). The outline of the separator 1120 is surrounded by an opening 1161 of one of the back chambers BC formed in the substrate 1016. The opening Π 61 of the rear cavity BC is covered with a diaphragm 1120. The diaphragm 1120 is isolated from the protective electrode 113 ,, wherein a portion of the gap between the diaphragm 112 〇 and the protective electrode 1130 forms an air hole (referred to as a Two air holes 1122. In Fig. 14B, the air holes 1122 are illustrated by hatching. Since the air holes 1122 are formed outside the opening 1161 of the rear chamber bc, the opening at the peripheral end of the diaphragm 1120 and the opening of the substrate 1? A first gap G2 is formed between the edges (see FIG. 13). The second gap G2 is in communication with the rear chamber Bc & air hole 1122. That is, the rear chamber BC passes through the second gap G2, the air hole, the first gap G1, and The hole HI is penetrated to communicate with the atmosphere. In the second gap G2, the oxygen hole 1122, the first gap g1, the penetration hole η1, and the second gap G2 have the highest acoustic resistance. The second gap G2 can be reduced (or by reducing the height of the protrusions 1123 of the interconnecting portions 1121 or by enlarging between the peripheral end of the diaphragm 1120 and the opening edge of the substrate 1〇16 in plan view) The overlapping area) increases the acoustic resistance of the second gap, thereby particularly improving the sensitivity in the low frequency range. - As shown in Figures 13A and 13B, the interconnecting portions 1121 are elongated outwardly from the outer circumference of the diaphragm 1120 having a circular shape of 124466.doc • 33 - 200826717. The diaphragm 112 is interconnected via an interconnect. The minute 1121 is connected to the contact 1124. Since the distal end portions of the interconnecting portions 1121 engage the first spacer film 1 〇 15 , the diaphragm 丨丨 2 桥 bridges across the through hole H3. The contours of the interconnecting portions 12b have been bent into a strip shape; therefore, the interconnecting portions 1121 are reduced in the elastic modulus in one of the radial directions of the diaphragm 1120. Therefore, the internal stress applied to the central portion of the diaphragm electrode film 1014 corresponding to the diaphragm 112 is applied by the interconnection portion 1121 (:: release. This increases the displacement of the diaphragm 1120 under pressure; therefore, it is possible to increase at all frequencies Sensitivity in the range. As shown in Fig. 13A, the diaphragm U20 has the protrusions 1123 which are downwardly directed toward the substrate 1016. The protrusions 1123 are deposited using the diaphragm electrode film low or another bonding diaphragm electrode film 1014. The film is formed such that the distal end of the protrusions 1123 of the diaphragm 112 is in contact with the surface of the substrate 1 。 16. Since the protrusions 1123 are provided, the second between the diaphragm 112 〇 and the substrate 1 恒定 16 is constantly maintained. The gap G2 is the same size. Incidentally, in the plan view, the protrusions 1123 of the diaphragm Ο 1120 may overlap the protrusions 1101 ′ of the cantilevers 1100 or they do not overlap each other in a plan view. Next, the capacitance will be described in detail. A method of manufacturing one of the microphones 1001. The electric microphone 1001 is manufactured by means of semiconductor device processing technology. It is clear that 5, a plurality of films are sequentially deposited on the substrate 1016 ( The material is composed of a piece of material; and the gap is appropriately formed by etching or stripping techniques; thus, a structure as shown in FIGS. 13A to 13C can be formed. FIG. 14A is a schematic view showing a condenser microphone ι〇〇ι during the process. a longitudinal cross-sectional view of one of the intermediate structures. Here, the first spacer film 1〇15, 124466.doc •34·200826717 diaphragm 1014, second spacer film 1013, plate electrode film 1〇12, and compression The film 1011 is sequentially formed on the substrate 1016, wherein the diaphragm electrode film 1〇14, the plate electrode film 1012, and the compression film ion are patterned. The penetration hole H4 is formed in the substrate 1〇16 by deep RIE. After the photoresist resists the compression film (7), the first spacer film 1〇15 and the second spacer film 1013 are selectively removed by anisotropic etching, thereby forming the condenser microphone 1001 shown in FIGS. 13a to 13C. The shape of the through hole of the spacer film 1〇15 and the shape of the through hole H2 of the second spacer film 1〇13 depend on the shape of the opening 1161 of the substrate 1〇16, and the plate electrode film 2 The shape of the penetration hole H1 and the shape of the slit s. A large output 1123 Formed in such a manner that a recess is formed in the first spacer film 1015 (which is directly formed thereunder), and then intrusion with the diaphragm electrode film 1014. Or 'the recess and the diaphragm electrode film 1〇14 Another deposited film having an insulating property or a conductive property is embedded together; the rule of the deposited film protruding from the recesses is removed by a planar process to 'then' the diaphragm electrode film 1 0 14 After deposition, similarly, the protrusions 11 〇 1 may be formed using recesses formed in the second spacer film 10 13 (which are directly formed underneath). In Fig. 14A, different internal stresses are applied in a thickness direction to a prescribed portion of the plate electrode film 1012 and a prescribed portion of the compression film 1〇11, which are used to form the cantilever i 1〇〇. That is, a strong compressive stress occurs in the compression film ion' instead of being in the plate electrode film 1012 positioned close to the diaphragm electrode film 1A14. Thereby, since the penetration hole H3 of the first spacer film 1015 and the penetration hole H2 of the second spacer film 1〇13 are formed, the tip 124466.doc -35-200826717 of the cantilever 11 is biased toward the diaphragm 1120. The protrusion u 〇丨 (which contacts the diaphragm 112 〇) causes the diaphragm 1120 to be pressed toward the substrate 1 〇 16 . This increases the first gap G1 between the diaphragm 112 〇 and the flat plate 111 , while reducing the first gap G2 between the diaphragm 丨 12 〇 and the substrate 1 〇 16 . At this time, the interconnecting portion u21 having a curved strip shape (which is formed in the diaphragm electrode film 1〇14) is expanded in the radial direction of one of the diaphragms 112〇; therefore, the internal stress of the diaphragm 1120 is not in the tension The direction increases and decreases. When the tip end portions of the projections 1123 of the diaphragm 112 are in contact with the substrate 1 〇 16, the cantilever i i 〇〇 and the interconnection portion 1121 are shape-stabilized as shown in Figs. 13A and 13B. In the space existing between the atmospheric space and the back cavity BC, the second gap G2 that achieves the maximum acoustic resistance depends on the height of the protrusions 1123 of the diaphragm 1120. The horizontal width of the second gap G2 (in the radial direction of the diaphragm 112 )) depends on the width of the projecting portion of the diaphragm 20 extending horizontally from the opening 1161 of the rear chamber BC. The sensitivity of the condenser microphone 100 in the low frequency range depends on the volume of the second gap G2 and the back cavity BC. In the present embodiment, the second gap G2 (which determines the sensitivity of the condenser microphone 1001 in the low frequency range) is smaller than the diaphragm 1120 and the substrate just after depositing the diaphragm electrode film 1014 on the first spacer film 1〇15. The distance between 1016. In addition, since the cantilever 1100 is deformed, the first gap G1 (between the diaphragm 1120 and the flat plate 111A) associated with the rated pressure and the resistance to mechanical vibration in the condenser microphone 1001 becomes larger than the second spacer film. The thickness of 1013. In other words, the present embodiment uses the internal stress of the deposited films for setting the aforementioned gaps; therefore, the first gap G1' can be appropriately increased while the second gap G2 is decreased. That is, the present invention can improve the sensitivity in the low frequency range, increase the rated pressure, and improve the resistance to mechanical vibration stability by 124466.doc -36-200826717. Thereby, a high level balance can be established between the sensitivity and stability in the condenser microphone 1〇〇1. The condenser microphone 1001 of the second embodiment can be further modified in various ways; therefore, the modification of the second embodiment will be described with reference to 15-8 to 15C, 16, 17, 18A to 18C, 19 and 20A to 20B. The same portions as those shown in FIGS. 13A to 13C and FIGS. 14A to 14B are designated by the same reference numerals; therefore, a repetitive description thereof will be omitted. 15A and 15B are cross-sectional views showing a modification of the second embodiment of the second gap G2; and Figs. 16 and 17 show the diaphragm electrode film 1 for realizing the formation of the second gap G2 shown in Figs. 15A and 15B. Plan of the change of 〇14. 15A and 15B show a cutting plane which is described with reference to Figs. 13A and 13B taken along lines 1A to 1A and 1B to 1B of Fig. 13 (as shown in Figs. 15A to 15B, 16 and 17). A second gap G2 is formed using the channel 1125, the channels extending inwardly from the peripheral portion of the diaphragm 112 in its radial direction. The width of the channels 1125 can be reduced as shown in FIG. 17 is not to be enlarged. That is, the channels 1125' can be appropriately designed in shape and size to achieve a desired acoustic resistance. The first end of the channels 1125 communicates with the air hole 1122, and the second end thereof Intersecting with the opening 1161 of the back cavity BC. The second gap G2 depends on the depth of the channel 丨丨25. Before the diaphragm electrode film 1〇14 is deposited as shown in Fig. 15C, a sacrificial film corresponding to the channel 1125' 1〇17 is formed on the substrate 1〇16 to realize the formation of the channels 1125. The preferred sacrificial film 1〇17 is composed of a predetermined material which can be combined with the first spacer film 1〇15 and the second Spacer film 1〇13-124466.doc •37-200826717 simultaneously engraved. Figure 18Α and 18Β A cross-sectional view showing a modification of the second embodiment in which the second gap (32) is formed is shown. Fig. 19 is a plan view showing one of the diaphragm electrode films 1A, which realizes the formation of the second gap G2 shown in Figs. 18A and 18B. 18A and 18B show a cutting plane which is illustrated with reference to Figs. 13A and 13B taken along lines 丨8 to 及8 and (7) to 1B in Fig. 13c. As shown in Figs. 18A to 18B and Fig. 19, A second gap G2 is formed using the channel 1165, which is elongated from the outside of the opening 1161 at the opening edge of the substrate 1. The first end of the channel 1165 communicates with the air hole 1122, and the second end thereof The portion communicates with the opening 1161 of the back cavity BC. The second gap G2 depends on the depth of the channels 。. As shown in FIG. 18C, the first spacer film 1 〇 15 is formed, and the substrate 1016 is formed. The channel n 65 is embedded together with a sacrificial film 1 〇 18. The preferred sacrificial film 1 〇 18 is composed of a prescribed material which can be combined with the first spacer film 1015 and the second spacer film 1 〇 13 Etching at the same time. Ο Figure 2〇Α and 2〇Β show and form the first gap G1 and the second A cross-sectional view of another second embodiment related to the gap 。 2. Fig. 2A and 2B show the cutting plane with respect to Fig. 3A taken along line 1A to 1A in Fig. 13C. For example, as shown in FIG. 2A, the protrusions 11〇1 are integrally formed with the diaphragm “Μ”, wherein the distal ends of the protrusions 11 接触1 are in contact with the cantilever 1100 to determine the size of the first gap G1. Further, the protrusions 23 are integrally formed with the substrate 1〇16, wherein the tip end of the protrusions ΐ23 is brought into contact with the diaphragm Π2〇 to determine the size of the second gap G2 (see FIG. 13B). In other words, the protrusions 1123 can be formed using one of the back side bonding substrates 1 〇 16 to deposit 124466.doc -38 - 200826717. Alternatively, as shown in Fig. 2B, protrusions are not necessarily formed with respect to the cantilever 1100 and the diaphragm 112. Moreover, the flat plate 1110 and the diaphragm 112 can each be formed in a single layer structure having a portion of insulating properties or a conductive layer structure in the second and other layers. The flat plate 111 〇 and the diaphragm 丨 12 不一定 do not necessarily form a circular shape and may form a rectangular shape. The cantilever 11 can be formed using another layer other than the plate electrode film 10 12 , for example, a deposited film formed between the plate electrode film f 1012 and the diaphragm electrode film 1014. In the end, the present invention is not limited to the first and second embodiments and the modifications thereof; therefore, other changes and modifications can be made within the scope of the invention as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS These and other objects, aspects and embodiments of the present invention are described in more detail with reference to the accompanying drawings in which: FIG. 1A is a longitudinal cross-sectional view taken along line AA of FIG. 1B shows a configuration of a condenser microphone according to a first embodiment of the present invention; FIG. 1B is a longitudinal sectional view taken along line B to B of FIG. 1C; FIG. 1C is a line along the line of FIGS. 1A and 1B. A cross-sectional view taken from C to C; Fig. 2 is a longitudinal sectional view schematically showing a diaphragm vibrating and contacting a spacer with respect to a flat plate; Fig. 3 is a view showing the formation of the capacitive type shown in Figs. 1A to 1C A cross-sectional view of one of the examples of the film laminate structure of the microphone; FIG. 4A is a cross-sectional view of one of the steps for manufacturing one of the condenser microphones - 124466.doc -39 - 200826717; A cross-sectional view of one of the steps of the method for manufacturing the condenser microphone is explained. FIG. 4C is a cross-sectional view showing one of the steps of the method for manufacturing the condenser microphone; 4D is used to explain the manufacturer of the condenser microphone One of the fourth and second steps of the method; Fig. 5 is a cross-sectional view of one of the steps of the method of manufacturing the condenser microphone; Figure 5B is used to explain the condenser microphone A cross-sectional view of one of the sixth steps of the manufacturing method; FIG. 5C is a cross-sectional view for explaining a seventh step of the method for manufacturing the condenser microphone; FIG. 6A is for explaining the manufacturing method of the condenser microphone FIG. 6B is a cross-sectional view for explaining a ninth step of the method for manufacturing the condenser microphone; FIG. 7A is a tenth step for explaining one of the methods for manufacturing the condenser microphone; FIG. 7B is a cross-sectional view showing a tenth system of the condenser microphone manufacturing method; FIG. 8A is a longitudinal sectional view taken along line A to A in FIG. 8C. Replicating a configuration of a condenser microphone according to a first embodiment of the present invention; 124466.doc -40· 200826717 Figure 8B is a cross-sectional view taken along line B to B of Figure 8C; Figure 8C A cross-sectional view taken along line C to C in Figs. 8A and 8B; Fig. 9 is a A partial cross-sectional view showing an example of a film laminated structure forming a condenser microphone shown in FIGS. 8A to 8C; FIG. 10A is a cross-sectional view showing one of the first steps of a manufacturing method of the condenser microphone; 10B is a cross-sectional view for explaining one of the second steps of the method for manufacturing the condenser microphone; FIG. 10C is a cross-sectional view for explaining one of the third steps of the method for manufacturing the condenser microphone; FIG. 10D is for A cross-sectional view showing one of the fourth steps of the manufacturing method of the condenser microphone; FIG. 11A is a cross-sectional view for explaining a fifth step of the method for manufacturing the condenser microphone; FIG. 11B is for explaining the capacitor One of the sixth steps of the method for manufacturing a microphone; FIG. 11D is a cross-sectional view for explaining a seventh step of the method for manufacturing the condenser microphone; FIG. 11D is for explaining an eighth manufacturing step. FIG. 12A is a cross-sectional view for explaining a ninth step of the method for manufacturing the condenser microphone; FIG. 12B is a cross-sectional view for explaining a tenth step of the method for manufacturing the condenser microphone; Figure 13A is a cross-sectional view taken along line 1A to 1A of the figure i3C, which shows 124466.doc -41 - 200826717. According to a second embodiment of the present invention, the construction of a condenser microphone; Figure 13C is a cross-sectional view taken along line 1B to 1B; Figure 13C is a plan view of one of the plates included in the condenser microphone of Figures 13A and 13B; Figure 14 is a schematic representation of the capacitor A longitudinal sectional view of one of the intermediate configurations of the microphone; FIG. 14B is a plan view showing a pattern of the diaphragm electrode film forming one of the diaphragms of the condenser microphone; FIG. 15A shows a modification not according to the first embodiment. FIG. 15B is a cross-sectional view showing the configuration of the condenser microphone shown in FIG. 15A; and FIG. 15C is a view showing the formation of the film laminate structure for forming the channel shown in FIG. 15B. Figure 16 is a plan view showing one of the diaphragms included in the condenser microphone shown in Figures 15A and 15B; Figure 17 is a diagram showing the diaphragm electrode film pattern included in the condenser microphone shown in Figures 15a and 15B. One floor plan; Figure 18 A cross-sectional view showing a configuration of a condenser microphone according to another modification of the second embodiment; FIG. 18B is a cross-sectional view showing the configuration of the condenser microphone shown in FIG. 18A; FIG. 18C is a view showing the realization of the formation of FIG. 18B. A cross-sectional view of a film layer structure 124466.doc-42-200826717 of the channel; FIG. 19 is a plan view showing a pattern of a diaphragm electrode film included in the condenser microphone shown in FIGS. 18A and 18B; 20A is a cross-sectional view showing a configuration of a condenser microphone according to another modification of the second embodiment; FIG. 20B is a view showing a configuration of a condenser microphone according to another modification of the second embodiment. Surface map. [Main component symbol description] 1 condenser microphone 2 condenser microphone 8 annular wall 9 opening edge / inner end of substrate 14 spacer 11 sound hole 12 plane 13 support 14 substrate 15 cavity 16 diaphragm 17 wiring portion 19 spring 102 #刻阻膜103 spacer film 104 conductive film 124466.doc 43- 200826717 105 insulating film 106 insulating film 107 wafer 108 conductive film 201 photoresist mask 202 photoresist mask * 203 photoresist mask 204 photoresist mask c 205 photoresist mask 206 photoresist mask 208 photoresist mask 210 photoresist mask 211 photoresist mask 212 photoresist mask 301 small pit g 302 small pit 304 sub L 306 1001 condenser microphone 1011 compression Membrane 1012 Plate Electrode Film 1013 Second Spacer Film 1014 Diaphragm Electrode Film 1015 First Spacer Film 124466.doc -44· 200826717
ί. 1016 基板(檔板) 1100 懸臂 1101 突出物 1110 平板 1112 觸點 1120 隔膜 1121 互連部分 1122 空氣孑L 1123 突出物 1124 觸點 1125 通道 1130 保護電極 1131 觸點 1161 開口 1165 通道 G1 第一間隙 G2 第二間隙 HI 穿透孔 H2 穿透孔 H3 穿透孔 H4 穿透孔 124466.doc -451016 Substrate (Baffle) 1100 Cantilever 1101 Projection 1110 Plate 1112 Contact 1120 Diaphragm 1121 Interconnect 1122 Air 孑L 1123 Tab 1124 Contact 1125 Channel 1130 Protection Electrode 1131 Contact 1161 Opening 1165 Channel G1 First Clearance G2 second gap HI penetration hole H2 penetration hole H3 penetration hole H4 penetration hole 124466.doc -45
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JP2006281889A JP2008099212A (en) | 2006-10-16 | 2006-10-16 | Capacitor microphone and its manufacturing method |
JP2007081423A JP2008244752A (en) | 2007-03-27 | 2007-03-27 | Electrostatic pressure transducer |
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-
2007
- 2007-10-15 KR KR1020070103467A patent/KR20080034407A/en not_active Application Discontinuation
- 2007-10-15 TW TW096138541A patent/TW200826717A/en unknown
- 2007-10-15 US US11/872,105 patent/US20080123876A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108698812A (en) * | 2015-09-18 | 2018-10-23 | 韦斯伯技术公司 | Flat spring |
TWI692255B (en) * | 2018-10-30 | 2020-04-21 | 美律實業股份有限公司 | MEMS sensor |
CN111372178A (en) * | 2019-12-15 | 2020-07-03 | 瑞声科技(新加坡)有限公司 | MEMS microphone, array structure and processing method |
Also Published As
Publication number | Publication date |
---|---|
KR20080034407A (en) | 2008-04-21 |
US20080123876A1 (en) | 2008-05-29 |
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