TW200826717A - Electrostatic pressure transducer and manufacturing method therefor - Google Patents

Abstract

An electrostatic pressure transducer (e.g., a condenser microphone) includes a plate having a plurality of holes and forming a fixed electrode, a diaphragm forming a vibrating electrode, at lease one spacer that is positioned between the plate and the diaphragm in the ring-shaped internal area internally of the peripheral end of the diaphragm, and a stopper plate having an opening, which is positioned opposite to the plate with respect to the diaphragm. The diaphragm vibrates relative to the plate in such a way that, due to electrostatic attraction, the internal portion thereof moves close to the plate while the external portion thereof moves opposite to the plate, wherein the peripheral end thereof partially comes in contact with the opening edge of the stopper plate. Thus, it is possible to realize flat frequency characteristics while improving the sensitivity in low-frequency ranges.

Description

200826717 IX. Description of the invention: [Technical field to which the invention pertains] - The invention relates to an electrostatic pressure transducer, such as a condenser microphone suitable for MEMS (Micro Electro Mechanical Systems). The present invention also relates to a method of manufacturing an electrostatic pressure transducer. - This application claims priority to the present patent application No. 2006-281889, the entire disclosure of which is hereby incorporated by reference. ^ [Prior Art] It is traditionally known that electrostatic pressure transducers (especially capacitive microphones) have been manufactured using MEMS (Micro Electro Mechanical Systems) processes. A micro-broadband converter for use as a capacitive microphone is taught in Japanese Patent Application Publication No. 2004-506394. The condenser microphone includes a flat plate forming a fixed electrode and a diaphragm forming a vibrating electrode, each of which is positioned adjacent to a substrate (or a wiring portion joining a die). A first junction structure may be employed in which the diaphragm is positioned adjacent to the wiring portion instead of the flat plate, or a first structure in which the flat plate is positioned adjacent to the wiring portion instead of the spacer. In each of the first and second structures, the diaphragm is used as a spacer to divide an acoustic space positioned relative to the wiring portion and a non-acoustic space positioned adjacent to the wiring portion. In addition, a plurality of holes are formed in the plate. In the configuration in which the diaphragm is positioned adjacent to the wiring portion instead of the "plate", the # cavity is formed by the diaphragm adjacent to the wiring portion. In the first, sigma configuration in which the flat plate is positioned adjacent to the wiring portion instead of the diaphragm, a cavity is formed by the flat plate adjacent to the wiring portion. When 124648.doc 200826717 - Static pressure difference occurs between the acoustic space and the non-acoustic space, the sensitivity of the condenser microphone may deteriorate. In order to avoid deterioration sensitivity, it is necessary to form a channel which establishes a balance between the air pressure in the non-acoustic space and the atmospheric pressure. / / When the sound wave enters the non-acoustic space via a channel connected between the acoustic space and the non-acoustic space (by dividing the barrier), the sensitivity of the condenser microphone may deteriorate. It is difficult to increase the sound of the channel f and, in order to deal with low frequency range sound waves, in other words, it is difficult to reduce the width (or section size) of the channel. Thus, conventional conventional condenser microphones each have a frequency characteristic in which sensitivity is deteriorated in a low frequency range. Further, a chirped microphone (or a tantalum condenser microphone) is known as an example of a small electrostatic converter which is produced by means of a semiconductor process. In the miniature broadband converter disclosed in Japanese Patent Application Publication No. 2004-506394, which is used as an electrostatic pressure transducer, a pair of relatively positioned electrodes are provided by an electrode having a relatively high rigidity. The plate is realized with a diaphragm having a relatively low Q rigidity, wherein an electric field caused by a bias voltage attracts the diaphragm to the electrode plate, and a gap between the electrode plate and the spacer It will decrease, but the gap will be maintained when the diaphragm contacts the protrusion of the electrode plate. Such electrostatic pressure transducers have the following problems. The drum sensitivity of the Shixi microphone is improved as the distance between the electrode plate and the diaphragm is reduced. However, an introduction phenomenon may occur in which the pressure-receiving diaphragm is deflected and attracted to the electrode plate when a bias voltage is applied. This degraded diaphragm is stable against its mechanical vibration and this reduces the nominal pressure of the diaphragm. When the diaphragm is attracted to the electrode plate, the distance between the diaphragm and the substrate increases, so that the acoustic resistance of the space in communication with the back cavity of the substrate is reduced, thereby reducing the sensitivity in the low frequency range. SUMMARY OF THE INVENTION One object of the present invention is to provide an electrostatic pressure transducer, such as a condenser microphone, in which the sensitivity associated with sound waves in a low frequency range is improved to achieve flat sensitivity characteristics. Another object of the present invention is to provide a method of manufacturing an electrostatic pressure transducer. f) Another object of the invention is to achieve a high level of balance between stability and sensitivity with respect to the electrostatic pressure transducer. In a first aspect of the invention, an electrostatic pressure transducer (eg, an electric microphone) includes: a flat plate having a plurality of holes and forming a solid electrode, a diaphragm forming a vibrating electrode, and the fixing Positioning the electrodes relative to each other; at least one spacer positioned between the flat plate and the diaphragm in an annular region inwardly at a peripheral end of the diaphragm; and a baffle, I) having an opening relative to the a diaphragm is located opposite the plate, wherein the diaphragm vibrates in a side with respect to the plate due to electrostatic attraction occurring between the plate and the diaphragm such that an inner portion of the diaphragm positioned within the spacer is approximated The plate moves while the outer portion of the diaphragm positioned outside the spacer moves relative to the plate such that the peripheral end portion of the diaphragm contacts the open edge of the baffle. The rut is to increase the space that allows the diaphragm to vibrate as much as possible, and the preferred system reduces the width of the passage between the acoustic space divided by the diaphragm and the non-acoustic space. In the condenser microphone, it is connected to 124466.doc 200826717 = the channel between the learning space and the non-acoustic space is formed in the space between the diaphragm and the baffle.

When the condenser microphone adopts a first structure in which the diaphragm is positioned between the flat plate and the substrate (four)-stone wafer, the substrate serves as the core plate. When an offset _ is applied, the diaphragm is attracted to the flat plate due to electrostatic attraction occurring between the flat plate and the diaphragm so as to partially contact the spacer, wherein the partition peripheral end portion contacts the opening of the baffle The edge, thus allowing the diaphragm to vibrate even when the width is reduced by the passage between the non-acoustic spaces of the acoustic space disk. This increases the acoustic impedance of the channel connected between the acoustic space and the non-acoustic space; and this makes it difficult for sound waves in the low frequency range to pass through the channel. That is, the sensitivity of the capacitive microphone can be prevented from deteriorating due to the acoustic wave entering the non-acoustic space defined by the diaphragm. The condenser microphone can be modified such that the entire perimeter of the diaphragm contacts the edge of the substrate opening that serves as a slab. In this modification, it is preferred to form a small gap at an appropriate position to establish a balance between the air pressure of the non-acoustic space and atmospheric pressure. Alternatively, the condenser microphone can be redesigned to employ a second structure in which the plate is positioned between the diaphragm and the substrate (formed using a germanium wafer). In this configuration, the baffle is positioned away from the wiring portion instead of the diaphragm. The wiring portion is formed as a multilayer wiring substrate enclosing a packaged base portion of the electrostatic pressure transducer, or a portion corresponding to a base portion of a package embedded in a lead frame. When the condenser microphone die is directly bonded to a circuit board for fixing other electronic components, the wiring portion corresponds to the circuit board. When a bias voltage is applied, the diaphragm is attracted to the plate due to electrostatic attraction occurring between the plate and the diaphragm 124466.doc 200826717, so that the spacer is partially contacted, wherein the peripheral end portion of the diaphragm is in contact The opening edge of the weight plate, thereby allowing the diaphragm to vibrate even when the width is reduced in connection with the passage between the acoustic space and the non-acoustic space. This increases the acoustic resistance of the channel connected between the acoustic space and the non-acoustic space; and this makes it difficult for sound waves in the low frequency range to pass through the channel. That is, the sensitivity of the condenser microphone can be prevented from being deteriorated due to accidental entry of sound waves into the non-acoustic space defined by the diaphragm.

That is, the capacitive converter can be made to have flat frequency characteristics without deteriorating sensitivity in the low frequency range. When the bias voltage is not applied, the non-acoustic space is not sealed in a gastight manner; therefore, a balance can be established between the air pressure of the non-acoustic space and the atmospheric pressure within the condenser microphone. This reliably prevents the diaphragm from being accidentally destroyed due to the difference in air pressure occurring between the acoustic space and the non-acoustic space; because &, the sensitivity of the condenser microphone can be prevented from being deteriorated due to the difference in air pressure. An electrostatic pressure transducer (eg, a condenser microphone) includes: a plate having a plurality of holes and formed with an electrode; and a diaphragm 'forming a vibrating electrode positioned relative to the fixed electrode; a spacer 定位 is positioned between the plate and the diaphragm and has an annular inner wall positioned outside the outermost hole in the holes of the plate; and a peripheral end portion supporting the plate to a diaphragm, the plate, and one of the two chambers defined by the diaphragm of the proximity-wiring portion, wherein the barrier vibrates in a manner relative to the panel, 124466.doc -10- 200826717 due to the The electrostatic attraction that occurs between the diaphragm and the diaphragm moves closer to the plate to enclose an opening around the spacer and substantially enclose the non-acoustic space in a post-gassing manner.

In the above, when a bias voltage is applied, the separator is attracted to the flat plate due to electrostatic attraction occurring between the flat plate and the separator, thereby closing the non-acoustic space in a gas-tight manner. This prevents the acoustic wave from accidentally entering the non-acoustic space; therefore, the sensitivity of the condenser microphone can be prevented from deteriorating. In other words, the capacitive converter can be made to have flat frequency characteristics without degrading sensitivity in the low frequency range. The inner wall of the spacer is substantially formed - preferably in the annular shape, a small gap is formed in the annular inner wall of the space to reduce the cutoff frequency below the range of the audio frequency. In short, the inner wall of the spacer may be formed by a perfect ring shape or an imperfect ring shape. 'The imperfect ring shape includes a small gap' which allows the cutoff frequency to be lower than the audio frequency range or close to the lower limit of the audio frequency range. frequency. When the inner wall of the spacer is formed in a desired ring shape, it is preferred to form an additional gap at a predetermined position other than the spacer to establish a relationship between the air pressure and the atmospheric pressure of the acoustic space. balance. The wiring portion is formed to form a multilayer wiring substrate enclosing a base portion of the package of the electrostatic pressure transducer, or a portion corresponding to a base portion of a package embedded in a lead package. When the die of the condenser microphone is directly coupled to a circuit board for fixing an electronic component, the non-acoustic space is not applied when the wiring portion does not apply the bias voltage between the air pressure of the (four) circuit board 0 and the airtight mode. Closed; therefore, the air pressure in the non-acoustic space can be balanced with 124466.doc 200826717. This prevents the diaphragm from being accidentally destroyed due to the difference in air pressure, and therefore, the sensitivity of the condenser microphone due to the difference in air pressure can be prevented from being deteriorated. Incidentally, each of the foregoing electrostatic pressure transducers may further comprise a plurality of springs interconnected to the four diaphragms, and a support member interconnected to the springs such that the diaphragm spans the support Pieces. In general, the film inevitably has internal stress during its forming process. In the condenser microphone, the diaphragm (which is a film) is bridged across the support via the springs; therefore, the stress of the diaphragm is released by the springs, and the tension of the diaphragm ( It is also the stress response of the diaphragm) which is also released by the yellowing. Thereby, the amplitude of the diaphragm can be increased, and the sensitivity of the condenser microphone can be improved. In a method of fabricating an electrostatic pressure sensor according to the first aspect of the present invention, a first film is formed which is used as the separator; a first insulating film is formed on the first film; Forming a second film on the first insulating film, which is used as the flat plate; forming at least a hole in the first insulating film by photoresist patterning and etching; depositing a second insulating film inside the hole, The composition is different from the composition of the first insulating film to form a spacer composed of the second insulating film; then, by wet etching, a predetermined region between the first film and the second film is selected The first insulating film is removed sexually. This manufacturing method is advantageous because the shape of the spacer having the insulating property can be determined regardless of the shape of the remaining portion of the first insulating film. In a method of manufacturing an electrostatic pressure transducer according to a second aspect of the present invention, a 'formation-first film is used as the separator; and a film is formed on the film of 124466.doc -12-200826717 An insulating film; a channel having a substantially annular shape is formed in the first insulating film by photoresist patterning and etching; and a second insulating film is deposited in the channel, the composition of which is different from the first insulating layer a composition of the film to form a spacer composed of the second insulating film; removing a portion (4) of the first: insulating film positioned inside the spacer; removing the second insulating film to expose it a first insulating film of the second insulating film; then, the first insulating film is removed from a predetermined region between the first film and the second film by wet etching. This manufacturing method is advantageous in that an annular spacer having an insulating property can be formed regardless of the shape of the remaining portion of the first insulating film. In a second aspect of the invention, an electrostatic pressure transducer includes a baffle (or a substrate); a plate formed by using a plate electrode film deposited on the baffle; a diaphragm A diaphragm electrode film is used to form; and a plurality of cantilevers are each biased toward the diaphragm at a distal end thereof to press the diaphragm. Due to the internal stress of the cantilevers, a first gap between the plate and the diaphragm can be increased to improve the stability of the electrostatic pressure conversion benefit. In the above, the baffle forms a rear cavity; the plate electrode film has a first penetration hole; and a second gap having an acoustic resistance is formed between the peripheral end of the diaphragm and the opening edge of the baffle The acoustic resistance is applied between the rear cavity and the first penetration hole; outside the rear cavity, at least one second penetration hole is formed in the outer portion of the diaphragm, and the first penetration is The hole is in communication with the second gap; the first interval is in communication with the first penetration hole. Here, one of the first penetration holes will cause the diaphragm to displace one of the air pressures and transmit it to the diaphragm 124466.doc •13·200826717. When the non-acoustic space (which is defined by the diaphragm relative to the plate) has a relatively small volume and is hermetically sealed, the pressure applied to the non-acoustic space causes a reaction to reduce the displacement of the diaphragm , thereby deteriorating sensitivity. In addition, it is possible that due to the air pressure of the material (4). The air pressure difference between the macropore pressures accidentally destroys the diaphragm. Because there is a second gap between the acoustic resistance (which is applied between the diaphragm and the baffle)

, to the thickness of the film, the sacrificial film is deposited between the diaphragm and the board, so this possibility can be eliminated. Thus, the sensitivity in the low range can be improved while ensuring a high level of stability with respect to the electrostatic pressure transducer (e.g., the condenser microphone). The file has a plurality of protrusions whose distal ends contact the baffle to form the second gap. Since the second gap depends on the height of the protrusion of the diaphragm, the sensitivity can be accurately set and the stability can be reliably ensured. Or the panel has a plurality of protrusions # that contact the diaphragm to form the second gap. Since the second gap depends on the height of the protrusion of the sand board, the sensitivity can be accurately set and the stability can be reliably ensured. In addition, a plurality of channels (which are elongated from the outside of the rear cavity) are formed in the baffle to form the second gap, and the second gap in the φ $ # # , , ^ depends on the channels size. It is possible to form a plurality of second penetration holes, wherein the barrier electrode film has a _f ribbon shape between the adjacent second penetration holes. This can be easily induced (I media displacement, as desired, to reduce the internal stress of the cantilever, which is necessary to improve sensitivity by increasing the first gap between the diaphragm and the plate during k. 124466 .doc 14 200826717 The cantilever can be formed using a plurality of films, whereby the internal stress of the cantilever is easily changed in the thickness direction thereof. Both the cantilever and the plate electrode film can be formed using a common film to reduce manufacturing. The cantilever has a plurality of protrusions projecting from the distal end thereof toward the diaphragm and the distal end thereof contacting the diaphragm, thereby reducing the internal stress of the cantilever. Alternatively, the diaphragm film is formed in plural An overhang in which the cantilevered dog is out of contact with the distal end of the cantilever. [Embodiment] The present invention will be further described in detail by way of examples with reference to the accompanying drawings. 1 · First Embodiment FIG. And 1C schematically show a cross-sectional view of a configuration of a condenser microphone according to a first embodiment of the present invention, and the film laminate structure is not specifically described. Figs. 8 and 1B The cutting plane is perpendicular to the surface of a plate 12. The cutting plane of Figure lc is parallel to the surface of the plate 12. Figure 1C shows a diaphragm 16 as viewed from the plate 12. Specifically, Figure 1A is taken along line a of Figure 1C. A is taken as a longitudinal sectional view, and Fig. 1B is a longitudinal sectional view taken along line B to B in Fig. 1C. The condenser microphone 1 includes a flat plate 12 forming a fixed electrode and a diaphragm forming a vibrating electrode. 16. The plate 12 is secured to an annular wall 8. The diaphragm i6 is bridged across the interior space defined by the wall 8 via a spring 19. A substrate 14 used as a baffle is secured to a wiring via an adhesive. Portion 17. A through hole (or an opening) is formed to pass through the substrate 14' in the thickness direction of the substrate to form a cavity 15 inside the opening edge 9 of the substrate 14. The cavity 15 is increased relative to the diaphragm 16 and the plate 12. One of the relative positions is non-acoustic 124466.doc -15- 200826717 The volume of space. That is, the cavity 15 is formed to reduce the amplitude of a pressure vibration occurring in the non-acoustic space due to the vibration of the diaphragm 16. 8 series uses one or more formed on the substrate 14. A membrane is formed. The wall 8 is connected between the plate 12 and the substrate 14. In the first embodiment, a support is defined as an interconnecting portion of the wall 8 interconnected with the spring 19. The diaphragm 16 is via the springs 19 And bridging across the cavity 15 to divide an acoustic space from the non-acoustic space. The diaphragm 16 is formed using one or more membranes (including a conductive membrane forming one of the vibrating electrodes). Specifically, the membrane 16 has A circular contour covers the opening of the substrate 14, wherein the thickness of the diaphragm 16 varies, for example, from 〇5 μηη to 1.5 μηη. The springs 19 are elongated from the predetermined position around the circumference of the diaphragm 16 toward the wall 8. The internal stress of one of the diaphragms 16 is reduced by the deformation of the springs 19. The flat plate 12 is formed using one or more films, including a conductive film forming the fixed electrode. A plurality of holes (i.e., sound holes 11) are formed to pass through the flat plate 12 at prescribed positions. Sound waves are transmitted through the acoustic holes 以便 to propagate inwardly into the condenser microphone 1 to vibrate the diaphragm 16. Viewed in a direction perpendicular to the diaphragm 16, a plurality of spacers 1 are disposed between the flat plate 12 and the diaphragm 16 in an annular region. The spacers 1〇 may be formed as islands' which are interspersed in a direction perpendicular to the diaphragm 16. Alternatively, it may form a ring shape. The base portions of the spacers 10 are interconnected to the panel 12. The height of the spacer 1 is less than the distance between the flat plate 12 and the diaphragm 16. Therefore, the distal end portions of the spacers 10 are away from the diaphragm 16 under the condition that no external force is applied to the diaphragm 16. The number and configuration of the spacers are suitably designed based on the shape, thickness, internal stress and support structure of the diaphragm 16, and the characteristics of the microphone 1 . In order to prevent accidental adhesion of the diaphragm 16 to the flat plate due to electrostatic attraction occurring in the condenser microphone 1 having the aforementioned configuration, it is necessary to adjust the shape of the slider 19 such as the shovel, the internal stress of the diaphragm 16, and the configuration. The diameter of the weir-like region of the spacers 1 and the height of the spacers 10. In order to achieve the situation where no electrostatic attraction is applied, the distance between the peripheral end of the diaphragm 16 and the opening edge 9 of the substrate 变得 becomes smaller than the distance between the diaphragm 16 and the opening edge 9 of the substrate μ, and the diaphragm 16 The peripheral end portion may partially contact the opening edge 9 of the substrate 14, and must be adjusted between the diaphragm 16 and the spacers, the inner region defined by the interior of the spacer, and between the separator 16 and the spacer 10 The width of the peripheral portion of the diaphragm 16 defined by the exterior of the contact locations, and the internal stress of the diaphragm 16. The internal stress of the diaphragm 16 is reduced by adjusting the film material forming the diaphragm 16, the thickness of the diaphragm 16, and the bias voltage applied to the diaphragm 16. For example, the bias voltage varies from 5 V to 15 V. The first embodiment is designed with a plurality of specified dimensions in which the distance between the plate 12 and the diaphragm 16 is not applied to the "hai bias voltage" is set to 4; at the open edge 9 of the diaphragm 16 and the substrate 14. The distance between the two is set to ι·5 μΠ1; the distance between the peripheral end of the diaphragm 16 and the contact position between the diaphragm 16 and the spacer 1〇 is set to 13 μm; the inner region of the diaphragm 16 (including the contact) The diameter of the spacers is set to 700 μm. Further, the diaphragm 16 has an elastic deformability in that its central portion approaches the flat plate 12 by 2 μm when the bias voltage is applied. 124466.doc -17- 200826717 The condenser microphone 1 can be modified such that the circumferential periphery of the diaphragm 16 completely contacts the open π edge 9 of the substrate i 4 . In this modification, a preferred system (e.g., relative to the opening edge 9 or the spacer 1 G) forms a smaller gap in the appropriate position to establish a relationship between the internal force of the non-acoustic space and the atmospheric force. balance. Next, the operation of the condenser microphone will be described in detail. When a bias voltage boosted by a charge pump (not shown) is applied between the plate 12 and the diaphragm 16, the diaphragm 16 is partially contacted with the spacers 10 due to electrostatic attraction, as shown in FIGS. 1A and 1B. The dotted line is shown. That is, the inner region of the diaphragm 16 defined inside the position in contact with the spacers 10 is attracted to the flat plate, and the peripheral edge of the diaphragm 6 defined outside the position where the spacers 1 are in contact with the spacers is bladed toward the substrate. 14 is brought close so that the peripheral end of the diaphragm 16 (except for the portion interconnected with the springs 19) contacts the inner end 9 of the substrate 14. In this state, when sound waves enter the acoustic holes to reach the diaphragm 16, the diaphragm 16 vibrates relative to the plate 12, because the diaphragm 12 has a larger thickness and a southerly rigidity to counter the deflection. . At this time, the diaphragm 16 vibrates in contact with the spacers 1 所示 as shown by a broken line in Fig. 2 . As described above, the condenser microphone 1 of the first embodiment is capable of vibrating the diaphragm 16 while causing at least a predetermined portion of the peripheral end portion of the diaphragm to contact the opening edge 9 of the substrate 14 serving as a shutter to reduce the The width of the channel between the acoustic space and the non-acoustic space. This increases the acoustic resistance of the channel connected between the acoustic two and the non-acoustic space; and this makes it difficult for the low frequency range of sound waves to pass through the channel. That is, it is possible to prevent the deterioration of the sensitivity of the condenser microphone 1 from occurring when the sound wave accidentally enters the non-acoustic space defined by the diaphragm 16 124466.doc -18-200826717. Compared with the car, its sensitivity will be relative to the low frequency

Frequency characteristics. The deteriorated first embodiment of the capacitive microphone wave and the low frequency range sound wave achieve flat

Prevent the diaphragm 16 from being destroyed due to the difference in air pressure; when closed, thus in a non-acoustic & balance. This makes it possible, and this makes it possible to control the sensitivity of the condenser microphone 1 to deteriorate. Figure 3 is a partial cross-sectional view showing an example of a film laminate structure in which a condenser microphone is not formed. The substrate 14 is formed using a wafer 1〇7 composed of a single crystal germanium. An insulating film 〇5 forming the spacers 10 and an etch stop film (1, 2 and the substrate 14 are used to form the wall 8 which is adjacent to the non-acoustic space defined by the diaphragm 16 of the wiring portion 17. The conductive film 1〇4 is formed using a conductive film 1〇4. The conductive film 1〇4 forms a fixed electrode. The flat plate 12 is formed using an insulating film 〇5, wherein the walls 8 are continuously interconnected to the surface layer of the flat plate 12. Therefore, the flat plate 2 is interconnected to the wall 8 and the spacer 10 is formed using the insulating film 105. The protrusions of the insulating film 1〇5 form the spacers 10, and the protrusions form the surface layer of the flat plate 12, The substrate 14 protrudes through the plate 12; thus the spacers 10 are interconnected to a flat 124466.doc -19-200826717 plate 12 〇 diaphragm 16, the springs 19 and the support 13 are formed using a conductive electrode forming the diaphragm A film 108 is formed. The support member 13 for supporting the springs 19 connected to the diaphragm 16 is embedded in the wall 8 associated with the conductive film 1 。 8. Next, 'will refer to Figs. 4A to 4D, Figs. 5A to 5C, and Fig. 6A and 6B and FIGS. 7A and 7B illustrate a method of manufacturing a condenser microphone 1 which is used in the drawings. A cross-sectional view of the manufacturing steps of the condenser microphone 1 is explained. Each of the illustrations shows only a section associated with a single wafer area, wherein it can be suitably used to connect the fixed electrode and the vibrating electrode with A contact of a signal processing circuit (not shown) is thus not shown. In a first step shown in Fig. 4A, a money engraving film 102 is formed on a wafer 107 composed of a single crystal germanium. The film ι〇2 is a sacrificial film composed of si〇2 having an insulating ability and used as an end point control in deep RIE (where RIE represents reactive ion etching), which will be described later. Etching transfers a pattern of the photoresist mask 2〇1 onto the etch stop film 102, thereby forming a small pit 3 〇1 in the film 丨〇2. In the second step shown in FIG. 4B The conductive film 1〇8 is formed on the etching stopper film 102, and then the pattern of the photoresist mask 2〇2 is transferred to the conductive film 1〇8, thereby forming the contour of the separator 16 and the contour of the springs 19. The diaphragm 16 and the springs 19 are formed using the conductive film 1〇8. The film 1〇8 is composed of a metal film or a polycrystalline film, which is deposited by decomposition CVD (where CVD represents chemical vapor deposition), which is doped with impurities such as phosphorus (P) and annealed. In a third step shown in FIG. 4C, a spacer film 1〇3 is formed on the 124466.doc -20-200826717 etch stop film 102 and the conductive film 108, and then a photoresist mask 2〇3 is formed. The pattern is transferred to the spacer film 103 to form small pits 302 in the spacer film 1〇3. For example, the spacer film 103 is formed in a desired thickness in a manner such that SiO 2 is thinly deposited by CVD. It is repeatedly annealed. In a fourth step as shown in FIG. 4D, a conductive film 1〇4 is formed on the etching stopper film 103, and then a pattern of the photoresist mask 204 is transferred to the conductive film 104, thereby forming a fixed electrode (the system thereof) Using a conductive film 1〇4 to form)

profile. The conductive film 104 is composed of a metal film or a polysilicon film which is deposited by decomposition CVD which is doped with impurities such as phosphorus (p) and annealed. In a fifth step shown in FIG. 5A, a hole 3 〇4 is formed in the conductive film 1〇4 and the spacer film 1〇3 by etching to realize pattern transfer of the photoresist mask 2〇5. The spacers are formed. Specifically, the conductive film 1 is subjected to isotropic etching, and then the spacer film 103 is subjected to anisotropic dry etching. The anisotropic dry etching is stopped before the etched portions reach the conductive film (10), whereby the holes 304 for forming the spacers H) having the thin end portions can be formed. Even if the depth of the holes 3G4 is set such that the conductive film 108 is exposed, the spacers 1 and 16 can be isolated by removing the insulating (four) 6 (which is formed in the next step). By the way, it is mentioned that the holes 3〇4 are not necessarily formed by the patterning and etching of the first resistance; therefore, it can be funeral/points, L, s, Γ - fine (for example) nano pressure The printing technique is used to form the sixth film of the sixth film, and the film of the insulating film 1 〇6, and then the gamma is taken up between the first masks 206. The pattern is transferred to the insulating film 124466.doc • 21 · 200826717 106, thereby removing unnecessary portions of the insulating film 106. For example, the insulating film 106 is composed of Si〇2, which is subjected to CVD. The insulating film 1〇6 is provided to form a separator. The insulation between the conductive film 108 of 16 and the conductive film 1〇4 forming the flat plate 12. In a seventh step shown in Fig. 5C, the spacer film is partially removed by using a photoresist mask 2〇8. i 〇 3 and the etch stop film 丨〇 2, thereby forming a hole 306 for forming a prescribed portion of one of the insulating films 1 〇 5 serving as the wall 8. Specifically, the spacer film 103 is subjected to isotropic wetness. Etching, and then the spacer film 103 and the etch stop film 102 are subjected to anisotropic dry etching to form an exposed wafer 1 〇 7 The holes 3 〇 6. The prescribed portion of the etch stop film 1 〇 2 covered with the conductive film 108 is not removed because the conductive film 1 〇 8 defines an end point. In the eighth step shown in FIG. 6A An insulating film 105 is formed over the spacer film 1〇3 and the conductive film 104. The insulating film 1〇5 is composed of a prescribed material having an etch selectivity with the spacer film 1〇3. For example, one is used. The SiN film is used to form the insulating film 105, and the thickness of the SiN film is adjusted by repeatedly performing decomposition CVD and annealing. In a ninth step shown in FIG. 6B, the pattern of the photoresist mask 211 is transferred by etching. To the insulating film 1〇5, thereby forming the acoustic holes u through the insulating film 〇5 and the conductive film 104. Specifically, two anisotropic etchings are performed using different etching gases to form the acoustic holes丨i. Next, the conductive film 108, the conductive film 104, and the insulating film 1〇5 sequentially deposited on the back side of the wafer 1 〇7 are removed by back grinding; thereafter, in the tenth step shown in FIG. 7A Forming a photoresist mask 212 on the back side of the wafer 1〇7 and then passing the wafer 107 deep RI]E, in order to form the cavity 15. 124466.doc -22- 200826717 In the step (10) of FIG. 7B, the insulating film (9) is formed with a residual film to supply the encapsulating agent to the acoustic holes u And cavity training, thereby removing unnecessary portions of the residual film 102 and the spacer film ι 3 by means of wet (four). Finally, the wafer 107 is divided into individual pieces by means of dicing. Thus, the completion of FIG. 3 can be completed. The generation of the condenser microphone 1. The first embodiment is designed to be suitable for the aforementioned first structure in which the diaphragm is positioned closer to the wiring portion than the flat plate. In the case of iron, the first embodiment can be modified to (4) the aforementioned second structure in which the flat plate is positioned further by the (four) wiring portion than the barrier. In this modification, a plate having an opening allowing the sound wave to enter therein is adhered to the opposite side of the wiring portion with respect to the diaphragm, and the substrate having the opening is adhered to the wiring portion 'λ, the plate and the baffle It is supported by a wall interconnected to the substrate. Further, the spacers are internal to the peripheral end of the diaphragm.

U: is formed in the annular region, and the springs are interconnected to the circumferential end of the diaphragm such that the diaphragm is bridged across the inner region of the wall via the springs. The peripheral end of the diaphragm contacts the open edge of the slot when no bias voltage is applied. Due to λ, a balance can be established between the acoustic air space and the non-acoustic space defined by the wiring portion by means of a passage defined by the partition, the baffle and the wall. Applying a bias voltage: the inner portion of the diaphragm defined within the contact position of the spacers is near the plate; due to the rigidity of the diaphragm, the barrier is defined externally at the location of the spacers The outer portion (or the peripheral portion) is adjacent to the 124466.doc • 23 - 200826717; and the perimeter of the diaphragm is connected to the edge of the opening of the acoustic* knife plate. Degree, wherein the diaphragm vibrates due to the width of the channel between the sound waves 1 and . Therefore, effects similar to those of the first embodiment are provided. For example, in the first embodiment, the spacers may modify the first embodiment. The plate is connected to the helium diaphragm / 4 spacers that are not connected to the flat membrane to the "Hai" membrane. In this modification, the diaphragm is adjacent to the plate when pressure is applied such that the opposite portion of the interconnect portion of the biasing electrical equal spacer contacts the plate. Here, due to the rigidity of the diaphragm, the outer portion of the diaphragm outside the spacer, the item μ, is adjacent to the baffle, and the peripheral portion of the septum/丨 initial win is in contact with the baffle. The open edge of the baffle. Incidentally, for example, spacers such as (4) may be further stepped so that they are isolated from and connected to the flat plate and the diaphragm. Next, a condenser microphone 2 modified in accordance with one of the first embodiment will be described in detail. 8A, 8B, and 8C are schematic cross-sectional views showing the configuration of the condenser microphone 2, and the film laminate structure is not specifically described, and the same portions as those shown in Figs. 1, 1 and 1C are the same. The number is specified; therefore, the repeated description is omitted. The cutting planes of Figs. 8A and 8B are perpendicular to the surface of the flat plate 12, and the cutting plane of Fig. 8C is parallel to the surface of the plate 12. Figure 8C shows the membrane 16 as seen from the plate 丨2杳. Specifically, FIG. 8A is a cross-sectional view taken along line A to A of FIG. 8C, and FIG. 8B is a cross-sectional view taken along line B to B of FIG. 8C. 0 124466.doc -24-200826717 In the patent-pending language towel, the wall may be defined as a collection of walls 8, a substrate 14 and an outer portion of the panel 12 externally such that it encompasses the non-acoustic space as well as the diaphragm 16, spacer 10 and wiring portion 17. 8 to 8C, this modification is different from FIG. 8 to 1 (the first embodiment shown is that the spacer 10 is substantially in a ring at a position outside the outermost acoustic hole). For example, the width of the spacer 1 测量 measured in the radial direction is 4 μηι. ('The slit 100 used as the gap is formed in the annular spacer 10. The slit 100 forms a 4 The width of the μιη and the height of a 4 μηι. The cutoff frequency depends on the shape of the slit 1 , wherein the slit 100 having the aforementioned dimensions achieves a cutoff frequency of about 3 ,, which is close to the lower limit of the audio frequency range. The overall operation of the condenser microphone 2. When a bias voltage is applied, the diaphragm 16 moves closer to the plate 12, wherein the annular peripheral portion of the diaphragm 16 contacts the spacer 1〇. Figure 8 shows that the diaphragm 16 4 is indicated by a broken line. Contact spacer 1 声. The acoustic wave is transmitted through the acoustic aperture of the plate i 2 so that I; reaches the diaphragm 16, so that it vibrates due to sound waves. When the diaphragm 16 partially contacts the spacer 10, the diaphragm 16 of the proximity wiring portion 17 Defining non-acoustic space The shell is isolated from the acoustic space except for the defined space corresponding to the spacer 10. Since it is difficult to make the acoustic wave (which is the detected object) enter the non-acoustic space defined by the diaphragm 丨6, the accidental deterioration of the capacitive type can be prevented. Sensitivity of the microphone 2. When a bias voltage is not applied, the diaphragm 16 does not contact the spacer 1〇, so that no air pressure difference is established between the acoustic space and the non-acoustic space divided by the diaphragm 16. Even if the bias voltage is applied Applied to the condenser microphone 2, a balance can be established between the air pressure of the non-acoustic space 124466.doc -25-200826717 and the atmospheric pressure by means of the slit 1 间隔 of the spacer 1 。. This prevents the diaphragm 16 from being The air pressure is poor and accidentally destroyed. In addition, the sensitivity of the condenser microphone 2 can be prevented from deteriorating due to the air pressure difference. The number of the slits 100 can be appropriately determined as long as the cutoff frequency remains outside the audio frequency range. A plurality of slits 100 are formed in the object 10. In this case, it is preferably formed at a predetermined position other than the spacer i (for example, regarding the diaphragm 16). An additional gap is provided to establish a balance between the non-acoustic, spatial air pressure and atmospheric pressure. Figure 9 is a cross-sectional view showing an example of a film laminate structure forming a condenser microphone 2. The wafer 1 is formed of a single crystal germanium. The wall 8 is composed of an etching stopper film 1 and a spacer 103 for forming a gap between the separator 16 and the flat plate 12, and a spacer 1 is formed. The insulating film 1 is composed of 〇5, etc. The flat plate 12 is formed using a conductive film 1〇4 to form the fixed electric r and the electrode. The conductive film 104 is bonded to the insulating film 105 for forming the wall 8. The spacer 10 is an insulating film. Formed by 105. The diaphragm 16 and the springs 19 are formed using a conductive film 1 〇 8 which is also used to form the vibrating electrode. The conductive film 108 is bonded between the etching stopper film 102 and the spacer film 103. Next, a method of manufacturing the condenser microphone 2 will be described in detail with reference to FIGS. 10 to 100, FIG. 11 to 110, and FIGS. 12 and 12B, each of which shows a sectional view of a single wafer region, wherein Appropriately designed to connect a letter 5 tiger processing circuit (not shown) to the fixed electrode and the contact of the vibrating electrode, so it is not shown in 124466.doc -26-200826717. . In the first step shown in Fig. HU, an etch stop film 102 is formed on the crystal ^ 1 〇 7 composed of a single crystal dream. (4) The 臈102 is a sacrificial layer of 〆, 彳, and insulating properties of Si0: which is used to perform endpoint control in deep rie. Next, a conductive film (10) is formed on the (four) blocking film ι 2 . For example, the conductive film 108 is composed of a -metal film or a polycrystalline film which is doped with impurities such as phosphorus (p) by decomposition CVD' and is annealed. In a second step shown in FIG. 10B, the pattern of the photoresist mask is transferred to the film 1 〇 8 to form the contour of the diaphragm 16 and the contour of the springs 19, both of which use the conductive film 1 〇 8 to form. In the third step of Fig. 1 <: none, a spacer film 1〇3 is formed over the etching stopper film 102 and the conductive film 〇8. The pattern of the photoresist mask 2〇3 is transferred to the spacer film 1 〇3, thereby forming the holes 3〇4 in the spacer 1. The hole 304 is for forming a spacer 1 〇 and substantially forming a ring shape, a prescribed portion of which is cut to form a slit 1 〇〇. The spacers 1〇3 are formed to a desired thickness by repeatedly performing CVD and annealing to effect fine deposition of Si〇2. By means of the etching, the holes 304 pass through the spacer film 1〇3 to reach the conductive film 1〇8, and the conductive film 1〇8 is thus partially exposed. Incidentally, the etching can be stopped before the substrate portion of the hole 3〇4 reaches the conductive film 108, so that the conductive film 1〇8 is not exposed. This eliminates the post-processing steps shown in Figure 11A. Holes 304 are not necessarily formed by photoresist patterning and etching; that is, they can be formed using, for example, nanoimprint techniques. In a fourth step shown in Fig. 10D, an insulating film 1?6 is formed on the film 103 of the space 124466.doc -27-200826717. The insulating film 1 () 6 is removed in the following steps to isolate the spacer 10 and the separator 16 from each other. For example, the insulating film 1〇6 is composed of the passed S i Ο 2 . In a fifth step shown in Fig. 11A, an insulating film 1?5 is formed on the film 106. The insulating film 105 is composed of a predetermined material having an etching selectivity with the spacer film 103 and the insulating film 1?6. For example, the insulating film 105 is formed to a desired thickness by repeatedly performing decomposition CVD and annealing. In a sixth step of Fig. 11B, the pattern of the photoresist mask 2〇4 is transferred to the insulating film 105, thereby removing unnecessary portions of the insulating film 1〇5. In a seventh step shown in Fig. 11C, the insulating film 1〇5 is partially removed, and then the conductive film 104 is formed to partially cover the upper surface of the insulating film 1〇5 and cover the exposed region of the insulating film 106. A pattern of a photoresist mask 21 is transferred to the conductive film 104, thereby forming a circular contour of the flat plate 12 (which is formed using the conductive film 1〇4). The conductive film 104 is composed of a metal film or a polycrystalline germanium film which is subjected to decomposition CVD, doped with impurities such as phosphorus (p), and is annealed. In the eighth step of FIG. 11D, the pattern of the photoresist mask 211 is transferred to the conductive film 104 and the insulating film 1〇5, thereby forming a flat plate with the acoustic holes 11 (which are used by the conductive film 104). form). Specifically, the acoustic apertures are formed by anisotropic dry etching. In the ninth step shown in FIG. 12A, a photoresist mask 212 is formed on the back side of the wafer 107, followed by the wafer 107. After deep RIE, to form the cavity 15. In the tenth step shown in FIG. 12B, the insulating film 1〇5 is used as an etch stop film to supply an etchant into the acoustic holes u and the cavity 15, thereby Borrowing 124466.doc • 28 - 200826717 A wet-assisted meal is used to remove unnecessary portions of the etch stop film 102, the spacer film 103, and the insulating film 106. Finally, the wafer 107 is divided into individual pieces. The generation of the electric valley microphone 2 shown in FIG.

The condenser microphone 2 can be further modified in various ways. That is, the condenser microphone 2 is not necessarily designed such that the diaphragm 16 is positioned between the substrate 14 and the flat plate 12. Conversely, the condenser microphone 2 can be redesigned in a manner such that the plate 12 is positioned between the substrate 14 and the diaphragm 16. Further, the spacer 10 is not necessarily connected to the flat plate 12; that is, the spacer 1A can be connected to the diaphragm 16 instead of the flat plate. Additionally, the spacer 10 can be isolated from the plate 12 and the diaphragm 16, wherein it can be coupled to the wall 8. Finally, the first embodiment and its modifications are further modified within the scope of the invention as defined by the appended claims. In particular, it is possible to suitably apply the film component, the film forming method, the film profile & method and the manufacturing process 4, the film material combination, the film thickness, and the desired contour formation applicable to the above-described manufacturing methods. Accuracy, which is a plurality of factors that achieve the desired physical properties of the capacitive microphone; therefore, it is not limiting. 2. Second Embodiment Next, a second implementation in accordance with one of the present invention will be For example, a condenser microphone 1001 will be described in detail. 13A and 13B are cross-sectional views schematically showing the essential parts of a capacitive microphone 10G1. The condenser microphone is deleted into a crystal moon, in which a plurality of thin films are deposited on a substrate (or a baffle) 由6 composed of Shi Xi and encapsulated in a wiring substrate and a cover (: none of the 124466 .doc •29- 200826717 shown in the package. A through hole H4 is formed to pass through the substrate 1016. One opening 1161 of the penetration hole H4 forms an opening of a rear cavity bc which is closed by the wiring substrate (not shown). A first spacer film 1015 is deposited on the surface of the substrate 1 to 16 and formed using, for example, an insulating film composed of S1. A circular through hole H3 is formed to pass through the first spacer film 1015. f, a diaphragm electrode film 1014 is deposited on the surface of the first spacer film 1015 and formed using a conductive film doped with impurities such as phosphorus (P) and composed of, for example, polycrystalline germanium. A second spacer film 1013 is deposited on the surface of the diaphragm electrode film 1014 and formed using, for example, an insulating film composed of SiO 2 . A circular through hole H2 is formed to pass through the second spacer film 1〇13. A plate electrode film 1012 is deposited on the surface of the second spacer film 1〇13 and is formed using a conductive film doped with a compound such as phosphorus (J 夤 and by, for example, polycrystalline shi The composition is applied in a direction of stretching. The 卩 stress (hereinafter referred to as a tensile stress) remains in the plate electrode film 丨〇i 2 . A compressed film 1011 is deposited on the plate electrode film 1012. An insulating film composed of, for example, Si〇2 is used on the surface, and an internal stress (hereinafter simply referred to as a compressive stress) in a compression direction remains in the compressed film 1011. Fig. 13C A plan view showing a basic portion of the condenser microphone 1〇〇1. 124466.doc 30- 200826717 A flat panel U1G is composed of a plate electrode film 1G12 whose peripheral portion is joined to the second spacer film H)13. 1() 12 is bridged across the second spacer film 1〇13 to close the penetration fine. A plurality of penetration holes m (used as a brother-penetrating hole) are formed in the flat plate 111 (). The wheel hub of the flat plate depends on the rim of the penetrating hole H2, wherein no specific limitation is applied to the shape of the plate (1), as long as the plate mo has a relatively large area positioned relative to a diaphragm 112, and the plate 111〇 It is rigid enough to resist its deflection. A contact 1112 is attached to the slab 1110 for routing it. A first gap (1) between the flat plate 1110 and the diaphragm 1120 is achieved by forming a penetration hole H2 in the second spacer film 1013. The first gap G1 is increased in response to the deflection of the cantilever lloo, and is fixed to a constant distance when the diaphragm 1120 contacts the substrate 1〇16. The first gap G1 communicates with an atmospheric space via the penetration hole Η1 and the slit S. As shown in Fig. 13A, the cantilever 11 is formed of a plate electrode film 1〇12 and a compression film 1011, and is separated from the plate 1110 via the slits S formed in the plate electrode film 1012. The base portions of the cantilever 11 are joined to the second spacer film 1013 such that the cantilevers 1100 protrude toward the center of the through hole 2 of the second spacer film 1013. The tensile stress is still in the plate electrode film 1012 positioned close to the diaphragm electrode film 1014, and the compressive stress is still in the compression film 1011 positioned away from the diaphragm electrode film 1014. Accordingly, the cantilever 1100 presses the diaphragm 1120 toward the substrate 10 16 in a manner such that the distal end portions of the cantilevered arms 11 that are positioned to secure their base portions are deflected downward toward the diaphragm 1120. The protrusion 1101 is formed in the distal end portion of the cantilever 11 突出 124466.doc -31 - 200826717 which protrudes toward the diaphragm 1120 and contacts the diaphragm 1120. The height of the protrusions 11〇1 is smaller than the thickness of the second spacer film 1013, and the second spacer film is interposed between the diaphragm electrode film 1014 and the plate electrode film 1012. Due to the deflection of the cantilever 11 (depending on its internal stress), the distal end of the projection 11〇1 presses the diaphragm 1120 against the substrate 1016 contacting the diaphragm 1120. These protrusions 11〇1 can be formed using the diaphragm electrode film 1014. Alternatively, it may be formed using another deposited film that bonds the separator electrode film 1014. Furthermore, the protrusions 11〇1 each have an insulating property or a conductive property. (\), in order to deflect the δHai cantilever 11 〇〇 to the diaphragm 112 〇, the internal stress of the preferred cantilever 11 在 varies in the thickness direction, that is, the compressive stress of the cantilever 向 is in the thickness direction of the diaphragm 1120 The condenser microphone 1 00 1 of the second embodiment is designed such that each cantilever of the cantilever ii 具有 has a two-layer structure composed of two films, wherein in order to change the internal stress in the thickness direction, Preferably, the film is intentionally applied with compressive stress to the film positioned away from the diaphragm 1120, and intentionally applies tensile stress to the film positioned adjacent to the diaphragm i 120. Even if the cantilever 1100 has a single layer structure composed of a single film, it can be controlled The internal stress of the cantilever 1100 is such that the internal stress in the compression direction is increased in the surface by appropriately changing the film formation conditions during film deposition. The internal stress in the compression direction may increase in the surface without changing the film formation conditions during film deposition. That is, the internal stress in the compression direction increases in the surface of the film by depositing polycrystalline germanium in situ by deposition, by increasing the dopant by The ion implantation of phosphorus is performed on the surface after depositing the polysilicon or by performing lamp annealing on the surface after the polycrystalline deposition. The cantilever 1100 may be biased toward the separator 1120 only due to the internal stress in the tensile direction. Case 124466.doc -32- 200826717 Next, it is necessary to form a deposited film forming the cantilever 1100 in such a manner that the tensile stress increases toward the diaphragm 1120 in the thickness direction. Fig. 14B shows a pattern of one of the diaphragm electrode films 1? A plan view. The diaphragm electrode film 1014 includes a diaphragm 1120 and a plurality of interconnecting portions 1121 for bridging the diaphragm 1120 across the first spacer film 1〇15, a guard electrode 1130, and contacts 1131 and 1124. The film 1〇14 is formed using a conductive film composed of 〇2 and doped with impurities such as phosphorus (P). The outline of the separator 1120 is surrounded by an opening 1161 of one of the back chambers BC formed in the substrate 1016. The opening Π 61 of the rear cavity BC is covered with a diaphragm 1120. The diaphragm 1120 is isolated from the protective electrode 113 ,, wherein a portion of the gap between the diaphragm 112 〇 and the protective electrode 1130 forms an air hole (referred to as a Two air holes 1122. In Fig. 14B, the air holes 1122 are illustrated by hatching. Since the air holes 1122 are formed outside the opening 1161 of the rear chamber bc, the opening at the peripheral end of the diaphragm 1120 and the opening of the substrate 1? A first gap G2 is formed between the edges (see FIG. 13). The second gap G2 is in communication with the rear chamber Bc & air hole 1122. That is, the rear chamber BC passes through the second gap G2, the air hole, the first gap G1, and The hole HI is penetrated to communicate with the atmosphere. In the second gap G2, the oxygen hole 1122, the first gap g1, the penetration hole η1, and the second gap G2 have the highest acoustic resistance. The second gap G2 can be reduced (or by reducing the height of the protrusions 1123 of the interconnecting portions 1121 or by enlarging between the peripheral end of the diaphragm 1120 and the opening edge of the substrate 1〇16 in plan view) The overlapping area) increases the acoustic resistance of the second gap, thereby particularly improving the sensitivity in the low frequency range. - As shown in Figures 13A and 13B, the interconnecting portions 1121 are elongated outwardly from the outer circumference of the diaphragm 1120 having a circular shape of 124466.doc • 33 - 200826717. The diaphragm 112 is interconnected via an interconnect. The minute 1121 is connected to the contact 1124. Since the distal end portions of the interconnecting portions 1121 engage the first spacer film 1 〇 15 , the diaphragm 丨丨 2 桥 bridges across the through hole H3. The contours of the interconnecting portions 12b have been bent into a strip shape; therefore, the interconnecting portions 1121 are reduced in the elastic modulus in one of the radial directions of the diaphragm 1120. Therefore, the internal stress applied to the central portion of the diaphragm electrode film 1014 corresponding to the diaphragm 112 is applied by the interconnection portion 1121 (:: release. This increases the displacement of the diaphragm 1120 under pressure; therefore, it is possible to increase at all frequencies Sensitivity in the range. As shown in Fig. 13A, the diaphragm U20 has the protrusions 1123 which are downwardly directed toward the substrate 1016. The protrusions 1123 are deposited using the diaphragm electrode film low or another bonding diaphragm electrode film 1014. The film is formed such that the distal end of the protrusions 1123 of the diaphragm 112 is in contact with the surface of the substrate 1 。 16. Since the protrusions 1123 are provided, the second between the diaphragm 112 〇 and the substrate 1 恒定 16 is constantly maintained. The gap G2 is the same size. Incidentally, in the plan view, the protrusions 1123 of the diaphragm Ο 1120 may overlap the protrusions 1101 ′ of the cantilevers 1100 or they do not overlap each other in a plan view. Next, the capacitance will be described in detail. A method of manufacturing one of the microphones 1001. The electric microphone 1001 is manufactured by means of semiconductor device processing technology. It is clear that 5, a plurality of films are sequentially deposited on the substrate 1016 ( The material is composed of a piece of material; and the gap is appropriately formed by etching or stripping techniques; thus, a structure as shown in FIGS. 13A to 13C can be formed. FIG. 14A is a schematic view showing a condenser microphone ι〇〇ι during the process. a longitudinal cross-sectional view of one of the intermediate structures. Here, the first spacer film 1〇15, 124466.doc •34·200826717 diaphragm 1014, second spacer film 1013, plate electrode film 1〇12, and compression The film 1011 is sequentially formed on the substrate 1016, wherein the diaphragm electrode film 1〇14, the plate electrode film 1012, and the compression film ion are patterned. The penetration hole H4 is formed in the substrate 1〇16 by deep RIE. After the photoresist resists the compression film (7), the first spacer film 1〇15 and the second spacer film 1013 are selectively removed by anisotropic etching, thereby forming the condenser microphone 1001 shown in FIGS. 13a to 13C. The shape of the through hole of the spacer film 1〇15 and the shape of the through hole H2 of the second spacer film 1〇13 depend on the shape of the opening 1161 of the substrate 1〇16, and the plate electrode film 2 The shape of the penetration hole H1 and the shape of the slit s. A large output 1123 Formed in such a manner that a recess is formed in the first spacer film 1015 (which is directly formed thereunder), and then intrusion with the diaphragm electrode film 1014. Or 'the recess and the diaphragm electrode film 1〇14 Another deposited film having an insulating property or a conductive property is embedded together; the rule of the deposited film protruding from the recesses is removed by a planar process to 'then' the diaphragm electrode film 1 0 14 After deposition, similarly, the protrusions 11 〇 1 may be formed using recesses formed in the second spacer film 10 13 (which are directly formed underneath). In Fig. 14A, different internal stresses are applied in a thickness direction to a prescribed portion of the plate electrode film 1012 and a prescribed portion of the compression film 1〇11, which are used to form the cantilever i 1〇〇. That is, a strong compressive stress occurs in the compression film ion' instead of being in the plate electrode film 1012 positioned close to the diaphragm electrode film 1A14. Thereby, since the penetration hole H3 of the first spacer film 1015 and the penetration hole H2 of the second spacer film 1〇13 are formed, the tip 124466.doc -35-200826717 of the cantilever 11 is biased toward the diaphragm 1120. The protrusion u 〇丨 (which contacts the diaphragm 112 〇) causes the diaphragm 1120 to be pressed toward the substrate 1 〇 16 . This increases the first gap G1 between the diaphragm 112 〇 and the flat plate 111 , while reducing the first gap G2 between the diaphragm 丨 12 〇 and the substrate 1 〇 16 . At this time, the interconnecting portion u21 having a curved strip shape (which is formed in the diaphragm electrode film 1〇14) is expanded in the radial direction of one of the diaphragms 112〇; therefore, the internal stress of the diaphragm 1120 is not in the tension The direction increases and decreases. When the tip end portions of the projections 1123 of the diaphragm 112 are in contact with the substrate 1 〇 16, the cantilever i i 〇〇 and the interconnection portion 1121 are shape-stabilized as shown in Figs. 13A and 13B. In the space existing between the atmospheric space and the back cavity BC, the second gap G2 that achieves the maximum acoustic resistance depends on the height of the protrusions 1123 of the diaphragm 1120. The horizontal width of the second gap G2 (in the radial direction of the diaphragm 112 )) depends on the width of the projecting portion of the diaphragm 20 extending horizontally from the opening 1161 of the rear chamber BC. The sensitivity of the condenser microphone 100 in the low frequency range depends on the volume of the second gap G2 and the back cavity BC. In the present embodiment, the second gap G2 (which determines the sensitivity of the condenser microphone 1001 in the low frequency range) is smaller than the diaphragm 1120 and the substrate just after depositing the diaphragm electrode film 1014 on the first spacer film 1〇15. The distance between 1016. In addition, since the cantilever 1100 is deformed, the first gap G1 (between the diaphragm 1120 and the flat plate 111A) associated with the rated pressure and the resistance to mechanical vibration in the condenser microphone 1001 becomes larger than the second spacer film. The thickness of 1013. In other words, the present embodiment uses the internal stress of the deposited films for setting the aforementioned gaps; therefore, the first gap G1' can be appropriately increased while the second gap G2 is decreased. That is, the present invention can improve the sensitivity in the low frequency range, increase the rated pressure, and improve the resistance to mechanical vibration stability by 124466.doc -36-200826717. Thereby, a high level balance can be established between the sensitivity and stability in the condenser microphone 1〇〇1. The condenser microphone 1001 of the second embodiment can be further modified in various ways; therefore, the modification of the second embodiment will be described with reference to 15-8 to 15C, 16, 17, 18A to 18C, 19 and 20A to 20B. The same portions as those shown in FIGS. 13A to 13C and FIGS. 14A to 14B are designated by the same reference numerals; therefore, a repetitive description thereof will be omitted. 15A and 15B are cross-sectional views showing a modification of the second embodiment of the second gap G2; and Figs. 16 and 17 show the diaphragm electrode film 1 for realizing the formation of the second gap G2 shown in Figs. 15A and 15B. Plan of the change of 〇14. 15A and 15B show a cutting plane which is described with reference to Figs. 13A and 13B taken along lines 1A to 1A and 1B to 1B of Fig. 13 (as shown in Figs. 15A to 15B, 16 and 17). A second gap G2 is formed using the channel 1125, the channels extending inwardly from the peripheral portion of the diaphragm 112 in its radial direction. The width of the channels 1125 can be reduced as shown in FIG. 17 is not to be enlarged. That is, the channels 1125' can be appropriately designed in shape and size to achieve a desired acoustic resistance. The first end of the channels 1125 communicates with the air hole 1122, and the second end thereof Intersecting with the opening 1161 of the back cavity BC. The second gap G2 depends on the depth of the channel 丨丨25. Before the diaphragm electrode film 1〇14 is deposited as shown in Fig. 15C, a sacrificial film corresponding to the channel 1125' 1〇17 is formed on the substrate 1〇16 to realize the formation of the channels 1125. The preferred sacrificial film 1〇17 is composed of a predetermined material which can be combined with the first spacer film 1〇15 and the second Spacer film 1〇13-124466.doc •37-200826717 simultaneously engraved. Figure 18Α and 18Β A cross-sectional view showing a modification of the second embodiment in which the second gap (32) is formed is shown. Fig. 19 is a plan view showing one of the diaphragm electrode films 1A, which realizes the formation of the second gap G2 shown in Figs. 18A and 18B. 18A and 18B show a cutting plane which is illustrated with reference to Figs. 13A and 13B taken along lines 丨8 to 及8 and (7) to 1B in Fig. 13c. As shown in Figs. 18A to 18B and Fig. 19, A second gap G2 is formed using the channel 1165, which is elongated from the outside of the opening 1161 at the opening edge of the substrate 1. The first end of the channel 1165 communicates with the air hole 1122, and the second end thereof The portion communicates with the opening 1161 of the back cavity BC. The second gap G2 depends on the depth of the channels 。. As shown in FIG. 18C, the first spacer film 1 〇 15 is formed, and the substrate 1016 is formed. The channel n 65 is embedded together with a sacrificial film 1 〇 18. The preferred sacrificial film 1 〇 18 is composed of a prescribed material which can be combined with the first spacer film 1015 and the second spacer film 1 〇 13 Etching at the same time. Ο Figure 2〇Α and 2〇Β show and form the first gap G1 and the second A cross-sectional view of another second embodiment related to the gap 。 2. Fig. 2A and 2B show the cutting plane with respect to Fig. 3A taken along line 1A to 1A in Fig. 13C. For example, as shown in FIG. 2A, the protrusions 11〇1 are integrally formed with the diaphragm “Μ”, wherein the distal ends of the protrusions 11 接触1 are in contact with the cantilever 1100 to determine the size of the first gap G1. Further, the protrusions 23 are integrally formed with the substrate 1〇16, wherein the tip end of the protrusions ΐ23 is brought into contact with the diaphragm Π2〇 to determine the size of the second gap G2 (see FIG. 13B). In other words, the protrusions 1123 can be formed using one of the back side bonding substrates 1 〇 16 to deposit 124466.doc -38 - 200826717. Alternatively, as shown in Fig. 2B, protrusions are not necessarily formed with respect to the cantilever 1100 and the diaphragm 112. Moreover, the flat plate 1110 and the diaphragm 112 can each be formed in a single layer structure having a portion of insulating properties or a conductive layer structure in the second and other layers. The flat plate 111 〇 and the diaphragm 丨 12 不一定 do not necessarily form a circular shape and may form a rectangular shape. The cantilever 11 can be formed using another layer other than the plate electrode film 10 12 , for example, a deposited film formed between the plate electrode film f 1012 and the diaphragm electrode film 1014. In the end, the present invention is not limited to the first and second embodiments and the modifications thereof; therefore, other changes and modifications can be made within the scope of the invention as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS These and other objects, aspects and embodiments of the present invention are described in more detail with reference to the accompanying drawings in which: FIG. 1A is a longitudinal cross-sectional view taken along line AA of FIG. 1B shows a configuration of a condenser microphone according to a first embodiment of the present invention; FIG. 1B is a longitudinal sectional view taken along line B to B of FIG. 1C; FIG. 1C is a line along the line of FIGS. 1A and 1B. A cross-sectional view taken from C to C; Fig. 2 is a longitudinal sectional view schematically showing a diaphragm vibrating and contacting a spacer with respect to a flat plate; Fig. 3 is a view showing the formation of the capacitive type shown in Figs. 1A to 1C A cross-sectional view of one of the examples of the film laminate structure of the microphone; FIG. 4A is a cross-sectional view of one of the steps for manufacturing one of the condenser microphones - 124466.doc -39 - 200826717; A cross-sectional view of one of the steps of the method for manufacturing the condenser microphone is explained. FIG. 4C is a cross-sectional view showing one of the steps of the method for manufacturing the condenser microphone; 4D is used to explain the manufacturer of the condenser microphone One of the fourth and second steps of the method; Fig. 5 is a cross-sectional view of one of the steps of the method of manufacturing the condenser microphone; Figure 5B is used to explain the condenser microphone A cross-sectional view of one of the sixth steps of the manufacturing method; FIG. 5C is a cross-sectional view for explaining a seventh step of the method for manufacturing the condenser microphone; FIG. 6A is for explaining the manufacturing method of the condenser microphone FIG. 6B is a cross-sectional view for explaining a ninth step of the method for manufacturing the condenser microphone; FIG. 7A is a tenth step for explaining one of the methods for manufacturing the condenser microphone; FIG. 7B is a cross-sectional view showing a tenth system of the condenser microphone manufacturing method; FIG. 8A is a longitudinal sectional view taken along line A to A in FIG. 8C. Replicating a configuration of a condenser microphone according to a first embodiment of the present invention; 124466.doc -40· 200826717 Figure 8B is a cross-sectional view taken along line B to B of Figure 8C; Figure 8C A cross-sectional view taken along line C to C in Figs. 8A and 8B; Fig. 9 is a A partial cross-sectional view showing an example of a film laminated structure forming a condenser microphone shown in FIGS. 8A to 8C; FIG. 10A is a cross-sectional view showing one of the first steps of a manufacturing method of the condenser microphone; 10B is a cross-sectional view for explaining one of the second steps of the method for manufacturing the condenser microphone; FIG. 10C is a cross-sectional view for explaining one of the third steps of the method for manufacturing the condenser microphone; FIG. 10D is for A cross-sectional view showing one of the fourth steps of the manufacturing method of the condenser microphone; FIG. 11A is a cross-sectional view for explaining a fifth step of the method for manufacturing the condenser microphone; FIG. 11B is for explaining the capacitor One of the sixth steps of the method for manufacturing a microphone; FIG. 11D is a cross-sectional view for explaining a seventh step of the method for manufacturing the condenser microphone; FIG. 11D is for explaining an eighth manufacturing step. FIG. 12A is a cross-sectional view for explaining a ninth step of the method for manufacturing the condenser microphone; FIG. 12B is a cross-sectional view for explaining a tenth step of the method for manufacturing the condenser microphone; Figure 13A is a cross-sectional view taken along line 1A to 1A of the figure i3C, which shows 124466.doc -41 - 200826717. According to a second embodiment of the present invention, the construction of a condenser microphone; Figure 13C is a cross-sectional view taken along line 1B to 1B; Figure 13C is a plan view of one of the plates included in the condenser microphone of Figures 13A and 13B; Figure 14 is a schematic representation of the capacitor A longitudinal sectional view of one of the intermediate configurations of the microphone; FIG. 14B is a plan view showing a pattern of the diaphragm electrode film forming one of the diaphragms of the condenser microphone; FIG. 15A shows a modification not according to the first embodiment. FIG. 15B is a cross-sectional view showing the configuration of the condenser microphone shown in FIG. 15A; and FIG. 15C is a view showing the formation of the film laminate structure for forming the channel shown in FIG. 15B. Figure 16 is a plan view showing one of the diaphragms included in the condenser microphone shown in Figures 15A and 15B; Figure 17 is a diagram showing the diaphragm electrode film pattern included in the condenser microphone shown in Figures 15a and 15B. One floor plan; Figure 18 A cross-sectional view showing a configuration of a condenser microphone according to another modification of the second embodiment; FIG. 18B is a cross-sectional view showing the configuration of the condenser microphone shown in FIG. 18A; FIG. 18C is a view showing the realization of the formation of FIG. 18B. A cross-sectional view of a film layer structure 124466.doc-42-200826717 of the channel; FIG. 19 is a plan view showing a pattern of a diaphragm electrode film included in the condenser microphone shown in FIGS. 18A and 18B; 20A is a cross-sectional view showing a configuration of a condenser microphone according to another modification of the second embodiment; FIG. 20B is a view showing a configuration of a condenser microphone according to another modification of the second embodiment. Surface map. [Main component symbol description] 1 condenser microphone 2 condenser microphone 8 annular wall 9 opening edge / inner end of substrate 14 spacer 11 sound hole 12 plane 13 support 14 substrate 15 cavity 16 diaphragm 17 wiring portion 19 spring 102 #刻阻膜103 spacer film 104 conductive film 124466.doc 43- 200826717 105 insulating film 106 insulating film 107 wafer 108 conductive film 201 photoresist mask 202 photoresist mask * 203 photoresist mask 204 photoresist mask c 205 photoresist mask 206 photoresist mask 208 photoresist mask 210 photoresist mask 211 photoresist mask 212 photoresist mask 301 small pit g 302 small pit 304 sub L 306 1001 condenser microphone 1011 compression Membrane 1012 Plate Electrode Film 1013 Second Spacer Film 1014 Diaphragm Electrode Film 1015 First Spacer Film 124466.doc -44· 200826717

1016 Substrate (Baffle) 1100 Cantilever 1101 Projection 1110 Plate 1112 Contact 1120 Diaphragm 1121 Interconnect 1122 Air 孑L 1123 Tab 1124 Contact 1125 Channel 1130 Protection Electrode 1131 Contact 1161 Opening 1165 Channel G1 First Clearance G2 second gap HI penetration hole H2 penetration hole H3 penetration hole H4 penetration hole 124466.doc -45

Claims (1)

200826717 X. Patent Application Range: 1. An electrostatic pressure transducer comprising: a flat plate having a plurality of holes and forming a fixed electrode; a diaphragm 'forming a vibrating electrode' with respect to the fixed electrode Positioning; to a V-spacer that is positioned inside a peripheral end of the diaphragm, positioned between the plate and the diaphragm in an annular region; and a target having an opening relative to the diaphragm Positioning relative to the plate, wherein the diaphragm vibrates in a manner relative to the plate such that the inner portion of the diaphragm positioned within the spacer approaches the plate due to electrostatic attraction occurring between the plate and the diaphragm While moving, the outer portion of the diaphragm positioned outside the spacer moves relative to the plate such that the peripheral end portion of the diaphragm contacts one of the edges of the opening of the weight plate. 2 . An electrostatic pressure transducer comprising: a flat plate having a plurality of holes and forming a fixed electrode; a diaphragm forming a vibrating electrode, the electrode being positioned relative to the fixed electrode; and a spacer, Positioning between the plate and the diaphragm and having a %-shaped inner wall positioned outside the outermost hole in the holes of the plate; and a wall supporting a peripheral end of the plate So as to surround a non-acoustic space, which is defined by a diaphragm adjacent to a wiring portion and the diaphragm, the 124466.doc 200826717 plate and the wiring portion, wherein the diaphragm vibrates in a manner relative to the plate relative to the plate So that due to the current electrostatic attraction between the plate and the diaphragm, the diaphragm moves close to the plate so as to be close to an opening surrounded by the sin and a substantially airtight manner. This non-acoustic space. 3. If the electrostatic pressure of the request item 1 is changed, it is a condenser microphone. 4. 4. The electrostatic pressure conversion wind generator of claim 2 is a capacitive microphone 5. If the request is 丨An electrostatic pressure transducer further comprising: a plurality of springs interconnected to the diaphragm; and a support member 'connected to the springs such that the diaphragm is bridged across the branch member. 6. The electrostatic pressure transducer of claim 2, further comprising: a plurality of magazines interconnected to the diaphragm; and a support member interconnected to the springs such that the support member is spanned The bridge is bridged. A manufacturing method of an electrostatic pressure transducer according to claim 1, comprising the steps of: forming a first film serving as the separator; depositing a first insulating film on the first film; Forming a second film for the flat plate on the insulating film, patterning and patterning by means of photoresist, forming a hole in the first insulating film; 124466.doc 200826717 depositing a second insulating film inside the hole a component different from the -m of the insulating film to form a spacer composed of the (iv); and a wet residual, selected from a predetermined region between the first film and the second film The first insulating film is removed. A method for manufacturing an electrostatic pressure transducer according to claim 2, comprising the steps of: forming a first film for use as the separator; depositing a first insulating film on the first film; Patterning and engraving, forming a channel having substantially a ring shape in the first insulating film; depositing a second insulating film inside the side channel, the composition of which is different from the first, the 邑, the edge film - a component to form a spacer composed of the second insulating film; removing an inner portion of the second insulating film positioned outside the germanium spacer; removing the second insulating material, further exposing the upper insulating film The first insulating film of the second insulating film; and the wet etching, the first insulating film is selectively removed from a prescribed region between the first film and the second film. 9. The electrostatic pressure transducer of claim 1, further comprising a plurality of cantilevers, each of which is biased toward the diaphragm at its distal end to depress the diaphragm. 10. The electrostatic pressure transducer of claim 9, wherein the first gap is shaped 124466.doc 200826717 Between the diaphragm and the plate, the opening of the baffle forms a rear cavity, and a second gap is formed between the peripheral end of one of the diaphragms and the baffle/the first gap has an acoustic resistance. The acoustic resistance is applied between the back cavity and one of the first penetration holes of the 5H flat plate, and at least one second penetration hole is formed in the outer portion of the diaphragm outside the opening of the baffle, The first through hole communicates with the first through hole and the second gap, and the first gap communicates with the first through hole. An electrostatic pressure transducer according to claim 10, wherein the diaphragm has a plurality of protrusions whose distal ends contact the baffle to form the second gap. 12. The electrostatic pressure transducer of claim 1 wherein the baffle has a plurality of protrusions having a distal end contacting the diaphragm to form the second gap. 13. The electrostatic pressure transducer of claim 1 wherein the baffle has a plurality of channels' 4 dedicated channels extending outwardly from the rear cavity to form the second gap. The electrostatic pressure transducer of claim 10, wherein the plurality of second penetration holes are formed in an outer portion of the diaphragm. 15. The electrostatic pressure transducer of claim 9, wherein each of the cantilevers of the cantilever is comprised of a plurality of films laminated together. 16. The electrostatic pressure transducer of claim 15 wherein the cantilever is formed using a common membrane with the plate. 17. The electrostatic pressure transducer of claim 9, wherein the spacer is attached to the distal end of the cantilever to protrude toward the diaphragm. The electrostatic pressure transducer of claim 9, wherein the spacer is attached to a diaphragm surface proximate the flat plate to protrude toward the cantilever. 124466.doc