200805466 (1) 九、發明說明 【發明所屬之技術領域】 本發明是關於晶圓清洗裝置，特別是關於可將經由切 割裝置切割加工後的晶圓利用被搭載切割裝置內的自旋洗 滌機進行清洗的切割裝置之晶圓清洗裝置。 【先前技術】 Φ 於表面形成有多數半導體元件的晶圓，經由切割裝置 切割成各個半導體晶片。切割裝置是將被稱爲切割刀片的 薄切割刀以高速旋轉對晶圓進行切割，在晶圓上形成不完 全溝槽（半厚度切割），或形成完全溝槽（全切割）切割 成各個晶片。 於切割加工時，事先將晶圓的背面黏貼在切割黏膠片 ，隔著該切割黏膠片將晶圓安裝在環狀框架。因此，晶圓 即使以全切割加工分割成各個晶片，各晶片也不會散落可 ® 維持在加工前的位置，整體而言是保持著晶圓形狀。另， 該保持著晶圓形狀的晶片集合體，於本說明書中爲方便說 明也是稱爲晶圓。 上述切割加工是對切割刀片及晶圓加工部份一邊供應 * 硏磨水及冷卻水一邊進行加工，以維持冷卻效果和硏模粉 沖洗效果。但是’單靠硏磨水及冷卻水形成的硏磨粉沖洗 作用顯然硏磨粉除去功能還是不夠。其原因是在晶圓的表 面及加工溝槽中會滯留含有硏磨粉的硏磨水及冷卻水。於 該狀況若對切割加工後的晶圓W直接進行乾燥，則滯留 -4- 200805466 (2) 的硏磨粉會凝固附著在晶圓，此時要將其去除就會變得非 常困難。 因此，在切割裝置內搭載有被稱爲自旋洗滌機的晶圓 清洗裝置，利用該晶圓清洗裝置，對切割後的晶圓在乾燥 - 前加以清洗藉此去除硏磨粉。 • 該晶圓清洗裝置（日本特開2003-27305 5號公報）， 具有：在清洗槽內保持著晶圓形成旋轉的自旋洗滌機平台 # ;及沿著晶圓表面一邊往復移動於自旋洗滌機平台上所保 持的晶圓的外周部和中心部之間一邊對晶圓供應高壓清洗 水（二流體）的噴嘴。 【發明內容】 〔發明欲解決之課題〕 然而，上述習知的晶圓清洗裝置，因其朝向晶圓噴射 清洗液的噴嘴只有1個，所以清洗範圍較狹窄，若要提昇 ® 清洗效果則必須將清洗時間設定成較長。因此，就切割裝 置而言，會有無法提高生產量的缺點。 此外，因只有1個噴嘴，所以當噴嘴以等速移動在晶 圓的外周部和中心部之間的擺動範圍內時，愈往外周部其 * 清洗能力愈低。因此，就必須將噴嘴的擺動速度控制成從 中心部往外周面部移動時速度變慢，或者，從外周部往中 心部移動時速度變快，即使是從該觀點來看還是有無法提 高生產量的問題。 本發明是有鑑於上述問題而爲的發明，目的是提供一 -5- 200805466 (3) 種藉由清洗能力的提昇就能夠提高生產量之切割裝置的晶 圓清洗裝置。 〔用以解決課題之手段〕 ^ 爲達成上述目的，本發明第一形態的晶圓清洗裝置， ^ 是被搭載在將晶圓切割成各晶片之切割裝置的同時，具備 有：可保持著晶圓使其旋轉的旋轉手段；及一邊沿著利用 # 該旋轉手段形成爲旋轉中的晶圓的表面往復移動一邊對晶 圓表面噴射清洗水的噴嘴，其特徵爲，配置有複數上述噴 嘴。 根據本發明第一形態時，因是構成爲從複數個噴嘴對 晶圓表面噴射清洗水，所以清洗範圍變廣，因此，即使是 短時間也能夠提昇清洗效果。如此一來，就能夠提昇切割 裝置的生產量。 本發明第二形態的晶圓清洗裝置，是於第一形態的晶 • 圓清洗裝置中，其特徵爲，具備可使配置有上述複數噴嘴 的噴嘴頭移動的移動手段，該移動手段是由控制部使其速 度控制成以一定速度將上述噴嘴頭沿著晶圓表面移動。 根據本發明第二形態時’於噴嘴頭的移動範圍內’移 ' 動手段即使是以習知等速移動噴嘴頭，但因噴嘴頭配置有 複數個噴嘴，所以清洗能力不會因清洗位置不同而降低。 因此，是由控制部控制移動手段使其以一定速度將噴嘴頭 沿著晶圓表面移動。如此一來’可使本發明相較於習知的 晶圓清洗裝置還能夠提昇生產量。本發明的一定速度是設 -6- 200805466 (4) 定成比習知晶圓清洗裝置的晶圓外周部速度還高速。 本發明第三形態的晶圓清洗裝置，是於第一或第二形 態的晶圓清洗裝置中，其特徵爲，將上述噴嘴形成的清洗 水擴散角度設定成指定角度使清洗水噴射區域形成橢圓形 的同時，使相鄰噴嘴的清洗水噴射區域於上述晶圓表面成 爲一部份重疊。 根據本發明第三形態時，因是將噴嘴的清洗水噴射區 域形成橢圓形，所以和清洗水噴射區域爲圓形的噴嘴相比 能夠擴大清洗範圍。此外，相鄰噴嘴的清洗水噴射區域於 上述晶圓表面是成爲一部份重疊，使重疊部份的清洗能力 提昇，因此複數具有該重疊部份就能夠更進一步提昇清洗 效果。本發明的橢圓形是設定成比習知晶圓清洗裝置的圓 形面積還大。 本發明第四形態的晶圓清洗裝置，是於第三形態的晶 圓清洗裝置中，其特徵爲，上述噴嘴頭的移動軌跡是設定 成可使上述重疊的上述清洗水噴射區域通過上述晶圓的中 心。 根據本發明第四形態時，因清洗能力高的重疊部份是 會通過不碰觸清洗水就無法清洗的中心部，所以一定能夠 清洗到中心部。 〔發明效果〕 如以上說明，根據本發明的晶圓清洗裝置時，因是構 成爲從複數個噴嘴對晶圓表面噴射清洗水，所以即使是短 200805466 (5) 時間也能夠提昇清洗效果，因此能夠提高生產量。此 本發明於噴嘴頭的擺動範圍內，可使移動手段以等速 噴嘴頭’所以和習知的晶圓清洗裝置相比能夠提高生 。再加上’本發明是將噴嘴的清洗水噴射區域形成橢 擴大清洗範圍的同時，將相鄰噴嘴的清洗水噴射區域 * 述晶圓表面成爲一部份重疊，因此能夠更進一步提昇 能力。又加上，本發明是將清洗能力高的重疊部份通 # 碰觸清洗水就無法清洗的中心部，因此一定能夠清洗 心部。 【實施方式】 〔發明之最佳實施形態〕 以下，根據附圖對本發明相關晶圓清洗裝置的最 施形態進行詳細說明。 晶圓清洗裝置實施形態的自旋洗滌機，因是搭載 半導體晶圓進行切割加工的切割裝置內，所以於此首 一邊參照第1圖、第2圖一邊針對切割裝置的構成進 明。 第1圖是表示切割裝置1 0的外觀透視圖，第2 切割裝置1 〇的槪略平面圖。切割裝置1 〇，是由：於 本體1 2具有可將收納有複數晶圓W的輸送盒（未圖 在切割裝置和外部裝置之間進行交接的搭載埠1 4、 部1 6且可將晶圓W搬運至裝置各部的晶圓搬運裝置 1 8 ;可對晶圓W表面進行攝影的攝影裝置20 ;切割 外， 移動 洋旦 座里 圓形 於上 清洗 過不 到中 佳實 在對 先是 行說 圖是 裝置 示） 吸附 18、 加工 -8- 200805466 (6) 部22 ;可對切割加工後的晶圓W進行清洗、乾燥的自旋 洗滌機24;及可對裝置各部的動作進行控制的控制部26 等所構成。 於切割加工部22設有形成爲2支相向配置的主軸： ~ 於前端安裝著第1極薄刀片28的高頻馬達內藏型空氣軸 * 承式高速旋轉主軸3〇 ;及於前端安裝著第2極薄刀片3 2 的高頻馬達內藏型空氣軸承式高速旋轉主軸34，刀片28 • 、3 〇都是以20,000rpm〜1 00,000rpm高速旋轉的同時，彼 此形成獨立執行第1圖、第2圖的Y方向指數標定和第1 圖的Z方向切入進刀。此外，晶圓W吸附載置用的工件 平台3 6是構成能以Z方向軸心爲中心進行旋轉的同時， 藉由X方向移動載物平台3 8的移動還可使其朝第2圖的 X方向形成硏磨進刀。 第1及第2極薄刀片28、32是使用同一種刀片，構 成爲可同時切割出2條線以提高切割效率，但也可於2支 ® 空氣軸承式高速旋轉主軸3 0、3 4分別安裝不同的刀片， 藉此進行特殊加工。 晶圓W如第3圖所示，隔著切割黏膠片S固定在框 架F，以複數收納在輸送盒供應至切割裝置1 〇的搭載埠 * 1 4的昇降機1 5。接著，由晶圓搬運裝置1 8將晶圓載置在 工件平台3 6上，由攝影裝置20對晶圓表面的圖案進行攝 影’由未圖示的畫像處理裝置加以畫像處理完成調準作業 〇 調準後的晶圓W是於切割加工部22由刀片28、30 -9- 200805466 (7) 切割加工後，再由晶圓搬運裝置1 8搬運至自旋洗滌機24 。於此’晶圓W是由自旋洗滌機24進行清洗後，由自旋 洗滌機24加以乾燥。乾燥後的晶圓w是透過晶圓搬運裝 置1 8的搬運，使其收納在搭載埠〗4上所配設的輸送盒（ 未圖示）內。 • 其次’針對切割裝置1 〇的自旋洗滌機24進行說明。 第4圖爲自旋洗滌機24的透視圖，第5圖爲自旋洗 • 滌機24的平面圖，第6圖爲自旋洗滌機24的噴嘴構造圖 〇 自旋洗滌機24，如第5圖、第6圖所示，是以自旋 洗滌機平台（旋轉手段）40、噴嘴裝置42、槽壁44及上 蓋（未圖示）等所構成。自旋洗滌機平台40，是設置在 自旋洗滌機平台40下方所設置的未圖示自旋洗滌機底座 上，透過未圖示的馬達構成以自旋洗滌機平台40軸心爲 中心形成旋轉。此外，自旋洗滌機平台40的上面是形成 ® 有由多孔質材形成的吸附面，隔著切割黏膠片S吸附固定 著晶圓W。 於自旋洗滌機平台40的外周部，以圓周上成等間隔 安裝有第5圖所示的4個框架支撐46、46、46、46，由 ' 該框架支撐46、46、46、46支撐著第3圖的框架F，使 晶圓W固定在自旋洗滌機平台40。 噴嘴裝置42的噴嘴頭48，是以指定間隔固定有3聯 的噴嘴50、50、50。於噴嘴頭48擺動臂52的前端是形 成固定著，該擺動臂52的底端部，是被固定在透過第6 -10- 200805466 (8) 圖所示擺動馬達（移動手段）54形成可往復轉動於指定 角度內的支柱5 6。此外，支柱5 6的往復轉動範圍是在噴 嘴頭4 8爲第5圖中實線所示的待機位置和超過自旋洗滌 機平台4 0的清洗終端位置的範圍內設定成噴嘴頭4 8的ίΚ 動範圍。 • 另外，擺動臂5 2爲中空構造，擺動臂5 2的前端是連 通於各噴嘴50、50、50，其底端是隔著未圖示的杯環及 • 轉換閥58連結於給水泵浦60。再加上，於噴嘴頭48固 定著高壓空氣供應管62。該高壓空氣供應管62的前端是 連通於各噴嘴50、50、50，其底端是固定在支柱56的同 時，隔著未圖示的杯環及轉換閥64連結於給氣泵浦60 ° 因此，當轉換閥5 8及64爲開放時，從給水泵浦60壓送 過來的清洗水（純水），伴隨著從給氣泵浦66壓送過來 的高壓乾燥空氣，從各噴嘴5 0、5 0、5 0朝晶圓W表面噴 射。 ^ 另，自旋洗滌機2 4的主要部是由上部開口的槽壁4 4 包圍著，槽壁44的開口部是由晶圓搬運裝置1 8的搬運臂 所附帶的未圖示蓋形成開放或封閉。此外，槽壁4 4設有 未圖示的徘氣口，從該排氣口使槽內的噴霧排出外部。再 ' 加上，上述蓋是由未圖示的滑動機構構成爲可開閉槽壁 44的開口部。上述構成的自旋洗滌機24的各部動作，是 由切割裝置1 〇的控制器26控制著。 接著，針對切割裝置1 〇的自旋洗滌機24其對切割加 工後的晶圓W進行清洗時的清洗方法加以說明。 -11 - 200805466 (9) 首先，滑動.上述蓋使槽壁44的開口部成爲開放。其 次’由晶圓搬運裝置1 8將隔著切割黏膠片S固定著加工 後的晶圓W之框架F載置固定在自旋洗滌機平台40上所 安裝的框架支撐46、46、46、46。 接著，滑動上述蓋使槽壁44的開口部成爲封閉，使 ， 晶圓w連同切割黏膠片S整個吸附固定在自旋洗滌機平 台40上。 • 其次，對擺動馬達54進行驅動，使噴嘴頭48從晶圓 W的外周部朝超過自旋洗滌機平台40上所固定的晶圓w 中心位置Ο若千量的清洗終端位置一邊擺動的同時，一 邊從噴嘴50、50、50前端朝晶圓W噴射高壓清洗水對晶 圓W進行清洗。 不過，實施形態的自旋洗滌機24具有3聯的噴嘴50 、5 0、5 0。如上述，具備有複數個噴嘴5 0，能夠使清洗 晶圓 W時的清洗範圍變大，所以即使是短時間也能夠提 ® 昇清洗效果。因此，具有該自旋洗滌機24的切割裝置1 0 能夠提高晶圓W的切割加工及清洗的生產量。 另外，自旋洗滌機24具備有第6圖所示的擺動馬達 54，該擺動馬達54是由控制器26使其速度控制成以一定 ‘ 速度將噴嘴頭48沿著被固定在自旋洗滌機平台48上的晶 圓W表面移動。 如此一來，於噴嘴頭4 8的上述擺動範圍內，擺動馬 達54即使是以等速移動噴嘴頭48，但因噴嘴頭48配置 有3聯的噴嘴5 0、5 0、5 0，所以相較於習知的晶圓清洗 -12- 200805466 (10) 裝置，自旋洗滌機24能夠提昇生產量。另，自旋洗滌機 24的一定速度，是設定成比習知晶圓清洗裝置的晶圓外 周部速度還高速。 再加上，自旋洗滌機24，如第7圖所示其噴嘴50的 清洗水擴散角度是設定成指定角度，對晶圓W進行清洗 • 時的清洗水噴射區域70是形成如第8圖所示的橢圓形。 如上述將噴嘴50的清洗水噴射區域70形成橢圓形時，和 • 清洗水噴射區域爲圓形的噴嘴相比能夠擴大清洗範圍。此 外’自旋洗滌機24的橢圓形是設定成比習知晶圓清洗裝 置的圓形面積還大。另外，相鄰的噴嘴5 0、5 0、5 0的清 洗水噴射區域70、70、70於晶圓W的表面是形成一部份 重疊。如上述具有重疊部份72、72時，能夠更進一步提 昇清洗效果。 又加上，噴嘴頭48的移動軌跡72是設定成可使重疊 的清洗水噴射區域72、72的其中之一通過如第5圖所示 ^ 自旋洗滌機平台48上所固定的晶圓W的中心Ο。如此一 來，清洗能力高的重疊部份72會通過不碰觸清洗水就無 法清洗的中心部Ο，因此一定能夠清洗到中心部Ο。 另，針對實施形態的自旋洗滌機24是以3聯的噴嘴 ^ 構造進行了說明，但並不限定於此，自旋洗滌機只要具有 2聯以上的噴嘴即可。 【圖式簡單說明】 第1圖爲表示切割裝置的一例透視圖。 -13- 200805466 (11) 弟2 爲弟i圖所不切割裝置的槪略平面圖。 第3圖爲表示固定在框架上的晶圓透視圖。 第4圖爲表示自旋洗滌機的構成透視圖。 第5圖爲第4圖所示自旋洗滌機的平面圖。 第6圖爲表示第4圖所示自旋洗滌機的噴嘴裝置側面 圖。 胃7圖爲表示第6圖所示噴嘴裝置的噴射角度說明圖 胃8圖爲表示第7圖所示噴嘴裝置的清洗水噴射區域 說明圖。 【ΐ要元件符號說明】 1 〇 :切割裝置 12 :裝置本體 1 4 :搭載埠 1 8 :晶圓搬運裝置 2G :攝影裝置 22 :切割加工部 24 :自旋洗滌機 26 :控制器 28 、 32 :刀片 3 〇、34 :空氣軸承式高速旋轉主軸 4〇 :自旋洗滌機平台 42 :噴嘴裝置 -14- 200805466 (12) 4 8 :噴嘴頭 5 0 :噴嘴200805466 (1) EMBODIMENT OF THE INVENTION [Technical Field] The present invention relates to a wafer cleaning apparatus, and more particularly to a wafer that can be cut by a cutting device by using a spin washer in a cutting device Wafer cleaning device for cleaning the cutting device. [Prior Art] A wafer having a plurality of semiconductor elements formed on its surface is cut into individual semiconductor wafers via a dicing device. The cutting device cuts the wafer by a thin cutting blade called a cutting blade, rotates the wafer at a high speed, forms an incomplete groove on the wafer (half thickness cutting), or forms a complete groove (full cut) to cut into individual wafers. . During the cutting process, the back side of the wafer is pasted on the cut adhesive film, and the wafer is mounted on the annular frame through the cut adhesive film. Therefore, even if the wafer is divided into individual wafers by full-cut processing, the wafers are not scattered and can be maintained at the position before processing, and the wafer shape is maintained as a whole. Further, the wafer assembly in which the wafer shape is held is also referred to as a wafer for convenience of description in the present specification. The above-mentioned cutting process is performed while supplying the honing water and the cooling water to the cutting blade and the wafer processing portion to maintain the cooling effect and the rinsing effect of the squeezing powder. However, it is obvious that the honing powder removal function is not enough by the honing powder flushing effect formed by the honing water and the cooling water alone. The reason for this is that honing water and cooling water containing honing powder are retained in the surface of the wafer and in the processing groove. In this case, if the wafer W after the dicing process is directly dried, the honing powder of -4-200805466 (2) is solidified and adhered to the wafer, and it is extremely difficult to remove it. Therefore, a wafer cleaning apparatus called a spin washer is mounted in the dicing apparatus, and the diced wafer is cleaned before being dried by the wafer cleaning apparatus to remove the honing powder. • The wafer cleaning apparatus (Japanese Laid-Open Patent Publication No. 2003-27305 No. 5) has a spin washer platform # that holds a wafer in a cleaning tank to form a rotation, and a reciprocating movement of the spin along the surface of the wafer. A nozzle for supplying high-pressure washing water (two-fluid) to the wafer while between the outer peripheral portion and the center portion of the wafer held on the washing machine platform. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, in the conventional wafer cleaning apparatus, since only one nozzle for ejecting the cleaning liquid toward the wafer is provided, the cleaning range is narrow, and it is necessary to improve the cleaning effect. Set the cleaning time to be longer. Therefore, in the case of the cutting device, there is a disadvantage that the throughput cannot be increased. Further, since there is only one nozzle, when the nozzle moves at a constant speed in the swing range between the outer peripheral portion and the center portion of the crystal, the cleaning ability of the outer peripheral portion becomes lower. Therefore, it is necessary to control the swing speed of the nozzle so that the speed becomes slow when moving from the center portion to the outer peripheral surface portion, or the speed becomes faster when moving from the outer peripheral portion to the center portion, and even from this point of view, the throughput cannot be increased. The problem. The present invention has been made in view of the above problems, and an object of the invention is to provide a crystal cleaning apparatus for a cutting apparatus capable of improving throughput by an improvement in cleaning ability. [Means for Solving the Problem] In order to achieve the above object, the wafer cleaning apparatus according to the first aspect of the present invention is mounted on a dicing apparatus for dicing a wafer into wafers, and is capable of holding crystals. A rotating means for rotating the circle; and a nozzle for ejecting the washing water to the surface of the wafer while reciprocatingly moving the surface of the rotating wafer by the rotating means, wherein the plurality of nozzles are disposed. According to the first aspect of the present invention, since the cleaning water is sprayed from the plurality of nozzles on the surface of the wafer, the cleaning range is widened, so that the cleaning effect can be improved even in a short period of time. In this way, the production capacity of the cutting device can be increased. A wafer cleaning apparatus according to a second aspect of the present invention is characterized in that, in the crystal cleaning apparatus of the first aspect, the apparatus includes a moving means for moving a nozzle head in which the plurality of nozzles are disposed, and the moving means is controlled The portion is controlled to move the nozzle head along the surface of the wafer at a constant speed. According to the second aspect of the present invention, the 'moving' means in the moving range of the nozzle head, even if the nozzle head is moved at a constant speed, the nozzle head is provided with a plurality of nozzles, so that the cleaning ability is not different depending on the cleaning position. And lower. Therefore, the control unit controls the moving means to move the nozzle head along the wafer surface at a constant speed. As a result, the present invention can increase the throughput compared to the conventional wafer cleaning apparatus. The constant speed of the present invention is set to -6-200805466 (4) and is set to be faster than the peripheral speed of the wafer of the conventional wafer cleaning apparatus. A wafer cleaning apparatus according to a first aspect of the present invention, characterized in that, in the wafer cleaning apparatus according to the first aspect or the second aspect, the cleaning water diffusion angle formed by the nozzle is set to a predetermined angle to form an ellipse in the cleaning water ejection region. At the same time, the cleaning water ejection regions of adjacent nozzles are partially overlapped on the surface of the wafer. According to the third aspect of the present invention, since the washing water spray region of the nozzle is formed into an elliptical shape, the washing range can be expanded as compared with the nozzle having the circular washing water spray region. In addition, the cleaning water ejection regions of the adjacent nozzles are partially overlapped on the surface of the wafer, so that the cleaning ability of the overlapping portions is improved, so that the plurality of overlapping portions can further improve the cleaning effect. The elliptical shape of the present invention is set to be larger than the circular area of the conventional wafer cleaning apparatus. A wafer cleaning apparatus according to a fourth aspect of the present invention is characterized in that, in the wafer cleaning apparatus of the third aspect, the movement trajectory of the nozzle head is set such that the overlapping cleaning water ejection region passes through the wafer center of. According to the fourth aspect of the present invention, since the overlapping portion having a high cleaning ability is a center portion which cannot be cleaned without touching the washing water, it is surely possible to wash the center portion. [Effect of the Invention] As described above, according to the wafer cleaning apparatus of the present invention, since the cleaning water is sprayed from the plurality of nozzles on the surface of the wafer, the cleaning effect can be improved even if the time is short, 200,805,466 (5). Can increase production. According to the present invention, the moving means can be made to have a constant velocity nozzle head within the swing range of the nozzle head, so that it can be improved compared with the conventional wafer cleaning apparatus. Further, in the present invention, the cleaning water ejection region of the nozzle is formed into an elliptical expansion cleaning range, and the surface of the wafer in which the cleaning water ejection region of the adjacent nozzles is partially overlapped, so that the capacity can be further improved. Further, according to the present invention, the overlapping portion having a high cleaning ability is passed through the center portion which cannot be cleaned by touching the washing water, so that the heart portion can be cleaned. [Embodiment] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the most preferred embodiment of a wafer cleaning apparatus according to the present invention will be described in detail with reference to the accompanying drawings. In the spin washer of the embodiment of the wafer cleaning apparatus, since the semiconductor wafer is mounted in the dicing apparatus for performing the dicing process, the configuration of the dicing apparatus is first described with reference to Figs. 1 and 2 . Fig. 1 is a perspective view showing the appearance of the cutting device 10, and a schematic plan view of the second cutting device 1A. The dicing apparatus 1 is configured such that the main body 1 2 has a transport cassette in which a plurality of wafers W are accommodated (the 埠 14 and the portion 16 that are not connected between the dicing device and the external device) and can be crystallized The wafer handling device 18 that transports the circle W to each part of the device; the imaging device 20 that can photograph the surface of the wafer W; the outside of the cutting, the circular inside the transgender, the upper part is not cleaned, the upper part is the first one. The figure is a device display) adsorption 18, processing-8-200805466 (6) part 22; a spin washer 24 capable of cleaning and drying the wafer W after cutting; and control for controlling the operation of each part of the apparatus Department 26 and so on. The cutting processing unit 22 is provided with two main shafts that are arranged to face each other: ~ a high-frequency motor built-in air shaft built in the front end of the first ultra-thin blade 28; a high-speed rotating main shaft 3〇; and a front end mounted on the front end 2 ultra-thin blade 3 2 high-frequency motor built-in air bearing type high-speed rotating spindle 34, blades 28 • and 3 〇 are rotated at 20,000 rpm to 10,000,000 rpm at high speed, and each other is independently executed. 2 The Y-direction index calibration of the figure and the Z-direction of the first figure are cut into the infeed. Further, the workpiece table 36 for the wafer W adsorption mounting is configured to be rotatable about the axis in the Z direction, and the movement of the carrier platform 38 in the X direction can be moved to the second figure. The honing feed is formed in the X direction. The first and second ultra-thin blades 28 and 32 are made of the same type of blade, and can be cut into two lines at the same time to improve cutting efficiency. However, they can also be used in two sets of air bearing type high-speed rotating spindles 3 0 and 3 4 respectively. Special machining is performed by installing different blades. As shown in Fig. 3, the wafer W is fixed to the frame F via the dicing adhesive film S, and is housed in a plurality of elevators 15 of the 埠 * 1 4 which are stored in the transport cassette and supplied to the cutting device 1 . Next, the wafer transfer device 18 mounts the wafer on the workpiece stage 36, and the image of the wafer surface is imaged by the image capturing device 20. The image processing device (not shown) performs image processing to complete the alignment operation. The succeeding wafer W is cut by the blade 28, 30 -9 - 200805466 (7) in the cutting processing portion 22, and then transported by the wafer transfer device 18 to the spin washer 24. Here, the wafer W is washed by the spin washer 24, and then dried by the spin washer 24. The dried wafer w is transported by the wafer transfer device 18 and stored in a transport cassette (not shown) disposed on the mounting cassette 4. • Next, the spin washer 24 for the cutting device 1 进行 will be described. 4 is a perspective view of the spin washer 24, FIG. 5 is a plan view of the spin washer/cleaner 24, and FIG. 6 is a nozzle configuration diagram of the spin washer 24, a spin washer 24, as shown in FIG. As shown in Fig. 6 and Fig. 6, a spin washer platform (rotation means) 40, a nozzle device 42, a groove wall 44, and an upper cover (not shown) are used. The spin washer platform 40 is provided on a spin washer base (not shown) provided below the spin washer platform 40, and is configured to rotate around the axis of the spin washer platform 40 by a motor (not shown). . Further, the upper surface of the spin washer platform 40 is formed with an adsorption surface formed of a porous material, and the wafer W is adsorbed and fixed via the dicing adhesive film S. On the outer peripheral portion of the spin washer platform 40, four frame supports 46, 46, 46, 46 shown in Fig. 5 are mounted at equal intervals on the circumference, supported by the frame supports 46, 46, 46, 46. The frame F of Fig. 3 is used to fix the wafer W to the spin washer platform 40. The nozzle head 48 of the nozzle device 42 has three nozzles 50, 50, and 50 fixed at predetermined intervals. The front end of the swing arm 52 of the nozzle head 48 is fixedly formed, and the bottom end portion of the swing arm 52 is fixed to be reciprocally formed by the swing motor (moving means) 54 shown in the sixth through the above-mentioned -10-200805466 (8). Rotate the struts 56 within a specified angle. Further, the reciprocating rotation range of the strut 56 is set to the nozzle head 48 in a range in which the nozzle head 48 is a standby position indicated by a solid line in FIG. 5 and a cleaning end position exceeding the spin washer platform 40. Κ Κ range. • The swing arm 52 is a hollow structure, and the front end of the swing arm 52 is connected to each of the nozzles 50, 50, and 50, and the bottom end thereof is connected to the water pump through a cup ring (not shown) and a switching valve 58. 60. Further, a high pressure air supply pipe 62 is fixed to the nozzle head 48. The front end of the high-pressure air supply pipe 62 communicates with each of the nozzles 50, 50, 50, and the bottom end thereof is fixed to the support post 56, and is coupled to the air supply pump 60 ° via a cup ring (not shown) and a switching valve 64. Therefore, when the switching valves 58 and 64 are open, the washing water (pure water) sent from the feed pump 60 is accompanied by the high-pressure dry air pumped from the air supply pump 66, from each nozzle 50. , 50, 50, sprayed toward the surface of the wafer W. Further, the main portion of the spin washer 24 is surrounded by the groove wall 44 having an upper opening, and the opening of the groove wall 44 is opened by a cover (not shown) attached to the transfer arm of the wafer transfer device 18. Or closed. Further, the groove wall 44 is provided with a helium port (not shown), and the spray in the groove is discharged to the outside from the exhaust port. Further, the cover is formed as an opening portion that can open and close the groove wall 44 by a sliding mechanism (not shown). The operation of each unit of the spin washer 24 configured as described above is controlled by the controller 26 of the cutting device 1A. Next, a cleaning method for cleaning the wafer W after the dicing is performed will be described with respect to the spin washer 24 of the dicing apparatus 1 。. -11 - 200805466 (9) First, the cover is slid, and the opening of the groove wall 44 is opened. Next, the frame F of the wafer W to which the processed wafer W is fixed via the dicing adhesive film S is placed and fixed on the frame support 46, 46, 46, 46 mounted on the spin washer platform 40 by the wafer transfer device 18. . Next, the cover is slid to close the opening of the groove wall 44, so that the wafer w and the dicing adhesive film S are entirely adsorbed and fixed on the spin washer platform 40. • Next, the swing motor 54 is driven to swing the nozzle head 48 from the outer peripheral portion of the wafer W toward the center of the wafer w fixed on the spin washer platform 40 while swinging at the position of the cleaning terminal The wafer W is cleaned by ejecting high-pressure cleaning water from the tips of the nozzles 50, 50, and 50 toward the wafer W. However, the spin washer 24 of the embodiment has three nozzles 50, 50, and 50. As described above, since the plurality of nozzles 50 are provided, the cleaning range at the time of cleaning the wafer W can be increased, so that the cleaning effect can be improved even in a short period of time. Therefore, the cutting device 10 having the spin washer 24 can increase the throughput of the cutting and cleaning of the wafer W. Further, the spin washer 24 is provided with an oscillating motor 54 shown in Fig. 6, which is controlled by the controller 26 to control the speed of the nozzle head 48 to be fixed at the spin washer at a constant speed. The surface of the wafer W on the platform 48 moves. In this manner, even if the oscillating motor 54 moves the nozzle head 48 at a constant speed within the swing range of the nozzle head 48, the nozzle head 48 is provided with three nozzles 50, 50, and 50, so Compared to the conventional wafer cleaning -12-200805466 (10) device, the spin washer 24 can increase the throughput. Further, the constant speed of the spin washer 24 is set to be higher than the peripheral speed of the wafer of the conventional wafer cleaning apparatus. Further, in the spin washer 24, as shown in Fig. 7, the washing water diffusion angle of the nozzle 50 is set to a predetermined angle, and the cleaning water spray region 70 when the wafer W is cleaned is formed as shown in Fig. 8. The oval shape shown. When the washing water spray region 70 of the nozzle 50 is formed into an elliptical shape as described above, the washing range can be enlarged as compared with the nozzle having the circular washing water spray region. Further, the elliptical shape of the spin washer 24 is set to be larger than the circular area of the conventional wafer cleaning apparatus. Further, the cleaning water ejection regions 70, 70, 70 of the adjacent nozzles 50, 50, and 50 are partially overlapped on the surface of the wafer W. When the overlapping portions 72, 72 are provided as described above, the cleaning effect can be further improved. Further, the movement trajectory 72 of the nozzle head 48 is set such that one of the overlapping wash water spray regions 72, 72 passes through the wafer W fixed on the spin washer platform 48 as shown in Fig. 5. The center of the game. As a result, the overlapping portion 72 having a high cleaning ability passes through the center portion which cannot be cleaned without touching the washing water, so that it can be cleaned to the center portion. Further, the spin washer 24 of the embodiment has been described with a three nozzle structure. However, the spin washer is not limited thereto, and the spin washer may have two or more nozzles. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an example of a cutting device. -13- 200805466 (11) Brother 2 is a sketch of the device that does not cut the device. Figure 3 is a perspective view of the wafer attached to the frame. Fig. 4 is a perspective view showing the configuration of a spin washer. Fig. 5 is a plan view of the spin washer shown in Fig. 4. Fig. 6 is a side view showing the nozzle device of the spin washer shown in Fig. 4. Fig. 7 is a view showing an injection angle of the nozzle device shown in Fig. 6. Fig. 8 is a view showing a washing water injection region of the nozzle device shown in Fig. 7. [Explanation of Symbols of Main Components] 1 〇: Cutting device 12: Device body 1 4: Mounting device 1 8 : Wafer transfer device 2G: Photographing device 22: Cutting processing portion 24: Spin washer 26: Controller 28, 32 : Blade 3 〇, 34: Air bearing type high-speed rotary spindle 4〇: Spin washer platform 42: Nozzle device-14- 200805466 (12) 4 8 : Nozzle head 5 0 : Nozzle
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