TW200802974A - Method of fabricating light emitting device and thus-fabricated light emitting device - Google Patents

Method of fabricating light emitting device and thus-fabricated light emitting device

Info

Publication number
TW200802974A
TW200802974A TW096107076A TW96107076A TW200802974A TW 200802974 A TW200802974 A TW 200802974A TW 096107076 A TW096107076 A TW 096107076A TW 96107076 A TW96107076 A TW 96107076A TW 200802974 A TW200802974 A TW 200802974A
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting device
fabricating
fabricated
dicing
Prior art date
Application number
TW096107076A
Other languages
English (en)
Other versions
TWI420689B (zh
Inventor
Hitoshi Ikeda
Akio Nakamura
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200802974A publication Critical patent/TW200802974A/zh
Application granted granted Critical
Publication of TWI420689B publication Critical patent/TWI420689B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
TW096107076A 2006-03-07 2007-03-02 製造發光元件的方法和因此製造的發光元件 TWI420689B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006061463A JP4743661B2 (ja) 2006-03-07 2006-03-07 発光素子の製造方法及び発光素子

Publications (2)

Publication Number Publication Date
TW200802974A true TW200802974A (en) 2008-01-01
TWI420689B TWI420689B (zh) 2013-12-21

Family

ID=38478033

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096107076A TWI420689B (zh) 2006-03-07 2007-03-02 製造發光元件的方法和因此製造的發光元件

Country Status (3)

Country Link
US (1) US7825008B2 (zh)
JP (1) JP4743661B2 (zh)
TW (1) TWI420689B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107305920A (zh) * 2016-04-20 2017-10-31 晶元光电股份有限公司 基板晶片以及ⅲ族氮化物半导体元件的制造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743661B2 (ja) * 2006-03-07 2011-08-10 信越半導体株式会社 発光素子の製造方法及び発光素子
DE102012215067A1 (de) * 2012-08-24 2014-02-27 Osram Opto Semiconductors Gmbh Herstellung von vereinzelten halbleiterbauelementen
DE102012111358A1 (de) * 2012-11-23 2014-05-28 Osram Opto Semiconductors Gmbh Verfahren zum Vereinzeln eines Verbundes in Halbleiterchips und Halbleiterchip
JP6576735B2 (ja) * 2015-08-19 2019-09-18 株式会社ディスコ ウエーハの分割方法
US10256149B2 (en) 2017-02-28 2019-04-09 Infineon Technologies Austria Ag Semiconductor wafer dicing crack prevention using chip peripheral trenches
CN111640687B (zh) * 2020-06-08 2023-03-14 郑州磨料磨具磨削研究所有限公司 一种单晶晶圆最优划片方向的确定方法
US11923653B2 (en) * 2020-12-23 2024-03-05 Lumentum Operations Llc Angled flip-chip bump layout

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JPS56103447A (en) * 1980-01-22 1981-08-18 Toshiba Corp Dicing method of semiconductor wafer
JPS62105446A (ja) * 1985-10-31 1987-05-15 Sharp Corp 半導体装置の製造方法
JPH07302930A (ja) * 1994-04-28 1995-11-14 Sanyo Electric Co Ltd 発光ダイオード及びその製造方法
JPH08115893A (ja) 1994-10-18 1996-05-07 Toshiba Corp 半導体素子の製造方法
JP3461449B2 (ja) * 1998-10-13 2003-10-27 シャープ株式会社 半導体素子の製造方法
JP3717785B2 (ja) * 2000-12-28 2005-11-16 ユーディナデバイス株式会社 半導体受光装置およびその製造方法
JP2003022987A (ja) * 2001-07-09 2003-01-24 Sanyo Electric Co Ltd 化合物半導体装置の製造方法
JP2003086541A (ja) * 2001-09-11 2003-03-20 Toyoda Gosei Co Ltd 半導体デバイス用サファイア基板の切断方法
JP3802424B2 (ja) 2002-01-15 2006-07-26 株式会社東芝 半導体発光素子及びその製造方法
JP3782357B2 (ja) 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
JP3715627B2 (ja) * 2002-01-29 2005-11-09 株式会社東芝 半導体発光素子及びその製造方法
US6995401B2 (en) * 2002-10-23 2006-02-07 Shin-Etsu Handotai Co., Ltd. Light emitting device and method of fabricating the same
US7183137B2 (en) * 2003-12-01 2007-02-27 Taiwan Semiconductor Manufacturing Company Method for dicing semiconductor wafers
US6924210B1 (en) * 2004-03-06 2005-08-02 International Business Machines Corporation Chip dicing
JP4154731B2 (ja) * 2004-04-27 2008-09-24 信越半導体株式会社 発光素子の製造方法及び発光素子
JP4584785B2 (ja) * 2005-06-30 2010-11-24 シャープ株式会社 半導体発光素子の製造方法
JP4743661B2 (ja) * 2006-03-07 2011-08-10 信越半導体株式会社 発光素子の製造方法及び発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107305920A (zh) * 2016-04-20 2017-10-31 晶元光电股份有限公司 基板晶片以及ⅲ族氮化物半导体元件的制造方法
CN107305920B (zh) * 2016-04-20 2020-04-07 晶元光电股份有限公司 基板晶片以及ⅲ族氮化物半导体元件的制造方法

Also Published As

Publication number Publication date
TWI420689B (zh) 2013-12-21
JP4743661B2 (ja) 2011-08-10
JP2007242804A (ja) 2007-09-20
US7825008B2 (en) 2010-11-02
US20070210327A1 (en) 2007-09-13

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