TW200746634A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- TW200746634A TW200746634A TW096109940A TW96109940A TW200746634A TW 200746634 A TW200746634 A TW 200746634A TW 096109940 A TW096109940 A TW 096109940A TW 96109940 A TW96109940 A TW 96109940A TW 200746634 A TW200746634 A TW 200746634A
- Authority
- TW
- Taiwan
- Prior art keywords
- power line
- potential power
- integrated circuit
- semiconductor integrated
- pass
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006079771A JP2007258990A (ja) | 2006-03-22 | 2006-03-22 | 半導体集積回路 |
JP2006190991A JP4222389B2 (ja) | 2006-07-11 | 2006-07-11 | リンギング低減回路および該リンギング低減回路を備えた半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746634A true TW200746634A (en) | 2007-12-16 |
TWI341084B TWI341084B (en) | 2011-04-21 |
Family
ID=38802932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096109940A TWI341084B (en) | 2006-03-22 | 2007-03-22 | Semiconductor integrated circuit |
Country Status (3)
Country | Link |
---|---|
US (2) | US20080012632A1 (zh) |
KR (1) | KR100918539B1 (zh) |
TW (1) | TWI341084B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090273375A1 (en) * | 2008-05-05 | 2009-11-05 | Luich Thomas M | Low-noise LVDS output driver |
US8947163B2 (en) * | 2012-05-02 | 2015-02-03 | Qualcomm Incorporated | Split capacitors scheme for suppressing overshoot voltage glitches in class D amplifier output stage |
US9252764B1 (en) * | 2013-03-12 | 2016-02-02 | Cirrus Logic, Inc. | Systems and methods for reducing spike voltages in a switched output stage |
US8970258B2 (en) | 2013-03-14 | 2015-03-03 | Cirrus Logic, Inc. | Systems and methods for edge control in a switched output stage |
US8872561B2 (en) | 2013-03-14 | 2014-10-28 | Cirrus Logic, Inc. | Systems and methods for edge control based on detecting current direction in a switched output stage |
US9847706B2 (en) | 2013-03-14 | 2017-12-19 | Cirrus Logic, Inc. | Systems and methods for reducing voltage ringing in a power converter |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04287415A (ja) | 1991-03-16 | 1992-10-13 | Fujitsu Ltd | リンギング防止回路 |
JPH0516153A (ja) | 1991-07-09 | 1993-01-26 | Showa Electric Wire & Cable Co Ltd | ゴム成型品の製造方法 |
JP3280681B2 (ja) | 1991-08-30 | 2002-05-13 | 富士通株式会社 | コンパンダ回路 |
JP3295440B2 (ja) * | 1991-09-10 | 2002-06-24 | パイオニア株式会社 | オーディオ装置における信号処理回路 |
US5633939A (en) * | 1993-12-20 | 1997-05-27 | Fujitsu Limited | Compander circuit |
JP3606917B2 (ja) | 1994-08-25 | 2005-01-05 | 富士通株式会社 | コンパンダ回路及びこれを用いた通信装置 |
JP3484556B2 (ja) * | 1995-05-25 | 2004-01-06 | 株式会社ルネサステクノロジ | 駆動回路 |
JPH09230951A (ja) | 1996-02-22 | 1997-09-05 | Sony Corp | スイッチング電源回路 |
JPH10126182A (ja) | 1996-10-23 | 1998-05-15 | Alpine Electron Inc | 増幅器におけるクリップ防止装置 |
US6552594B2 (en) | 1997-03-27 | 2003-04-22 | Winbond Electronics, Corp. | Output buffer with improved ESD protection |
US5978192A (en) * | 1997-11-05 | 1999-11-02 | Harris Corporation | Schmitt trigger-configured ESD protection circuit |
JP3152204B2 (ja) * | 1998-06-02 | 2001-04-03 | 日本電気株式会社 | スルーレート出力回路 |
JP2000216673A (ja) | 1999-01-26 | 2000-08-04 | Toshiba Corp | 静電破壊保護回路および静電破壊保護回路付きcmos回路 |
US6249410B1 (en) * | 1999-08-23 | 2001-06-19 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit without overstress gate-driven effect |
JP2001309656A (ja) | 2000-04-24 | 2001-11-02 | Canon Inc | リンギングチョークコンバータ及び過負荷検出方法 |
US6201375B1 (en) * | 2000-04-28 | 2001-03-13 | Burr-Brown Corporation | Overvoltage sensing and correction circuitry and method for low dropout voltage regulator |
US6646840B1 (en) * | 2000-08-03 | 2003-11-11 | Fairchild Semiconductor Corporation | Internally triggered electrostatic device clamp with stand-off voltage |
US6377033B2 (en) * | 2000-08-07 | 2002-04-23 | Asustek Computer Inc. | Linear regulator capable of sinking current |
JP3617433B2 (ja) * | 2000-09-05 | 2005-02-02 | 株式会社デンソー | 駆動回路 |
US6333623B1 (en) * | 2000-10-30 | 2001-12-25 | Texas Instruments Incorporated | Complementary follower output stage circuitry and method for low dropout voltage regulator |
US6760205B1 (en) * | 2002-04-03 | 2004-07-06 | Xilinx, Inc. | Active inductance for ESD parasitic cancellation |
US7209332B2 (en) * | 2002-12-10 | 2007-04-24 | Freescale Semiconductor, Inc. | Transient detection circuit |
JP4223331B2 (ja) * | 2003-06-13 | 2009-02-12 | 株式会社日立製作所 | 電力制御用半導体素子の保護装置及びそれを備えた電力変換装置 |
JP3773506B2 (ja) * | 2003-07-24 | 2006-05-10 | 松下電器産業株式会社 | 半導体集積回路装置 |
TWI252967B (en) * | 2004-07-19 | 2006-04-11 | Richtek Techohnology Corp | Output voltage overload suppression circuit applied in voltage regulator |
CN100517903C (zh) * | 2004-11-26 | 2009-07-22 | 鸿富锦精密工业(深圳)有限公司 | 避免误接不当交流电源的保护电路 |
-
2007
- 2007-03-22 KR KR1020070028029A patent/KR100918539B1/ko not_active IP Right Cessation
- 2007-03-22 US US11/726,613 patent/US20080012632A1/en not_active Abandoned
- 2007-03-22 TW TW096109940A patent/TWI341084B/zh not_active IP Right Cessation
-
2010
- 2010-01-19 US US12/690,090 patent/US7982522B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7982522B2 (en) | 2011-07-19 |
KR20070095828A (ko) | 2007-10-01 |
US20080012632A1 (en) | 2008-01-17 |
TWI341084B (en) | 2011-04-21 |
KR100918539B1 (ko) | 2009-09-21 |
US20100164590A1 (en) | 2010-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200737664A (en) | Charge pump circuit and semiconductor device having the same | |
TW200644396A (en) | Driving circuit for use with high voltage bidirectional semiconductor switches | |
TW200746634A (en) | Semiconductor integrated circuit | |
TW200737097A (en) | Semiconductor device, display device, and electronic device | |
ATE487277T1 (de) | Schaltungsanordnung zur ansteuerung eines elektrischen leistungsschalters auf hohem spannungspotenzial | |
MY157390A (en) | Switching circuit and semiconductor module | |
TW200742966A (en) | Substrate biasing apparatus | |
WO2008142824A1 (ja) | リレー駆動回路、及びそれを用いた電池パック | |
TW200723499A (en) | Semiconductor devices | |
WO2007009465A3 (en) | Programmable microphone | |
WO2008027969A3 (en) | Multi-threshold reset circuit | |
WO2011008717A3 (en) | Integrated power supplies and combined high-side plus low-side switches | |
TW200735370A (en) | Semiconductor device, display device, and electronic device | |
TW200636753A (en) | Pre-charge voltage supply circuit of semiconductor device | |
TW200627788A (en) | Zero-bias-power level shifting | |
TW200707602A (en) | Inductor | |
WO2008078443A1 (ja) | スイッチ回路、可変コンデンサ回路およびそのic | |
TW200710803A (en) | Light emitting device using organic electroluminescent element | |
TW200637096A (en) | Power clamp circuit and semiconductor device | |
WO2007089639A3 (en) | High voltage gate driver ic (hvic) with internal charge pumping voltage source | |
WO2011020686A3 (de) | Eingangsschaltung für ein elektrisches gerät, verwendung einer eingangsschaltung und elektrisches gerät | |
TW200612662A (en) | Level shifter circuit without dc current flow | |
WO2007051175A3 (en) | Power supply for 2-line dimmer | |
WO2008015462A3 (en) | Power supply circuit | |
TW200707900A (en) | Reference voltage generating circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |