TW200746317A - Method of forming a semiconductor device and semiconductor device - Google Patents
Method of forming a semiconductor device and semiconductor deviceInfo
- Publication number
- TW200746317A TW200746317A TW096112740A TW96112740A TW200746317A TW 200746317 A TW200746317 A TW 200746317A TW 096112740 A TW096112740 A TW 096112740A TW 96112740 A TW96112740 A TW 96112740A TW 200746317 A TW200746317 A TW 200746317A
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- semiconductor layer
- semiconductor device
- semiconductor
- regions
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 12
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2006/004943 WO2007115585A1 (en) | 2006-04-11 | 2006-04-11 | Method of forming a semiconductor device and semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746317A true TW200746317A (en) | 2007-12-16 |
TWI438845B TWI438845B (zh) | 2014-05-21 |
Family
ID=37106462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096112740A TWI438845B (zh) | 2006-04-11 | 2007-04-11 | 形成半導體裝置之方法及半導體裝置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8076189B2 (zh) |
TW (1) | TWI438845B (zh) |
WO (1) | WO2007115585A1 (zh) |
Families Citing this family (51)
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US7572705B1 (en) * | 2005-09-21 | 2009-08-11 | Advanced Micro Devices, Inc. | Semiconductor device and method of manufacturing a semiconductor device |
WO2010086154A1 (en) * | 2009-01-30 | 2010-08-05 | 5Advanced Micro Devices, Inc | In situ formed drain and source regions including a strain inducing alloy and a graded dopant profile |
DE102009006884B4 (de) | 2009-01-30 | 2011-06-30 | Advanced Micro Devices, Inc., Calif. | Verfahren zur Herstellung eines Transistorbauelementes mit In-Situ erzeugten Drain- und Source-Gebieten mit einer verformungsinduzierenden Legierung und einem graduell variierenden Dotierstoffprofil und entsprechendes Transistorbauelement |
US8305829B2 (en) | 2009-02-23 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same |
US8305790B2 (en) | 2009-03-16 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical anti-fuse and related applications |
US8957482B2 (en) | 2009-03-31 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuse and related applications |
US8912602B2 (en) | 2009-04-14 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
DE102009031114B4 (de) * | 2009-06-30 | 2011-07-07 | Globalfoundries Dresden Module One LLC & CO. KG, 01109 | Halbleiterelement, das in einem kristallinen Substratmaterial hergestellt ist und ein eingebettetes in-situ n-dotiertes Halbleitermaterial aufweist, und Verfahren zur Herstellung desselben |
US8461015B2 (en) | 2009-07-08 | 2013-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | STI structure and method of forming bottom void in same |
US8759943B2 (en) | 2010-10-08 | 2014-06-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having notched fin structure and method of making the same |
US8264032B2 (en) * | 2009-09-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Accumulation type FinFET, circuits and fabrication method thereof |
US8472227B2 (en) | 2010-01-27 | 2013-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and methods for forming the same |
US8187928B2 (en) | 2010-09-21 | 2012-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming integrated circuits |
US8264021B2 (en) | 2009-10-01 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Finfets and methods for forming the same |
US8497528B2 (en) | 2010-05-06 | 2013-07-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating a strained structure |
US9484462B2 (en) | 2009-09-24 | 2016-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of fin field effect transistor |
US8482073B2 (en) * | 2010-03-25 | 2013-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including FINFETs and methods for forming the same |
US8623728B2 (en) | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
US8980719B2 (en) | 2010-04-28 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for doping fin field-effect transistors |
US8440517B2 (en) | 2010-10-13 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET and method of fabricating the same |
US8298925B2 (en) | 2010-11-08 | 2012-10-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
US8629478B2 (en) | 2009-07-31 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure for high mobility multiple-gate transistor |
US20110049582A1 (en) * | 2009-09-03 | 2011-03-03 | International Business Machines Corporation | Asymmetric source and drain stressor regions |
US7994062B2 (en) * | 2009-10-30 | 2011-08-09 | Sachem, Inc. | Selective silicon etch process |
US9922878B2 (en) | 2010-01-08 | 2018-03-20 | Semiconductor Manufacturing International (Shanghai) Corporation | Hybrid integrated semiconductor tri-gate and split dual-gate FinFET devices and method for manufacturing |
CN102122645B (zh) | 2010-01-08 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | 集成电路结构、其制造方法和使用方法 |
US9040393B2 (en) | 2010-01-14 | 2015-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor structure |
KR101781620B1 (ko) * | 2010-09-01 | 2017-09-25 | 삼성전자주식회사 | 모오스 트랜지스터의 제조방법 |
US8928094B2 (en) | 2010-09-03 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained asymmetric source/drain |
US8603924B2 (en) | 2010-10-19 | 2013-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming gate dielectric material |
US9048181B2 (en) | 2010-11-08 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming ultra shallow junction |
US8769446B2 (en) | 2010-11-12 | 2014-07-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for increasing fin device density for unaligned fins |
US8455952B2 (en) * | 2010-11-22 | 2013-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer elements for semiconductor device |
KR20120073727A (ko) * | 2010-12-27 | 2012-07-05 | 삼성전자주식회사 | 스트레인드 반도체 영역을 포함하는 반도체 소자와 그 제조방법, 및 그것을 포함하는 전자 시스템 |
US8592915B2 (en) | 2011-01-25 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doped oxide for shallow trench isolation (STI) |
US8877602B2 (en) | 2011-01-25 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms of doping oxide for forming shallow trench isolation |
US8431453B2 (en) | 2011-03-31 | 2013-04-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure |
US20130193483A1 (en) * | 2012-01-27 | 2013-08-01 | International Business Machines Corporation | Mosfet Structures Having Compressively Strained Silicon Channel |
US9142642B2 (en) * | 2012-02-10 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for doped SiGe source/drain stressor deposition |
US9589803B2 (en) | 2012-08-10 | 2017-03-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate electrode of field effect transistor |
CN103715089B (zh) * | 2012-09-29 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
US10134895B2 (en) | 2012-12-03 | 2018-11-20 | Stmicroelectronics, Inc. | Facet-free strained silicon transistor |
US9245971B2 (en) * | 2013-09-27 | 2016-01-26 | Qualcomm Incorporated | Semiconductor device having high mobility channel |
US9496149B2 (en) * | 2014-04-14 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods for manufacturing the same |
US9941388B2 (en) * | 2014-06-19 | 2018-04-10 | Globalfoundries Inc. | Method and structure for protecting gates during epitaxial growth |
RU2586444C1 (ru) * | 2015-02-13 | 2016-06-10 | федеральное государственное бюджетное образовательное учреждение высшего образования Кабардино-Балкарский государственный университет им. Х.М. Бербекова | Способ изготовления полупроводникового прибора |
US9362407B1 (en) | 2015-03-27 | 2016-06-07 | International Business Machines Corporation | Symmetrical extension junction formation with low-K spacer and dual epitaxial process in FinFET device |
US9793400B2 (en) | 2015-10-12 | 2017-10-17 | International Business Machines Corporation | Semiconductor device including dual-layer source/drain region |
JP2017126610A (ja) * | 2016-01-12 | 2017-07-20 | トヨタ自動車株式会社 | スイッチング素子 |
US10141426B2 (en) * | 2016-02-08 | 2018-11-27 | International Business Macahines Corporation | Vertical transistor device |
US11205718B1 (en) * | 2018-11-26 | 2021-12-21 | Texas Instruments Incorporated | High performance super-beta NPN (SBNPN) |
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US6887762B1 (en) * | 1998-11-12 | 2005-05-03 | Intel Corporation | Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
US6274894B1 (en) | 1999-08-17 | 2001-08-14 | Advanced Micro Devices, Inc. | Low-bandgap source and drain formation for short-channel MOS transistors |
US6372583B1 (en) * | 2000-02-09 | 2002-04-16 | Intel Corporation | Process for making semiconductor device with epitaxially grown source and drain |
US6368926B1 (en) | 2000-03-13 | 2002-04-09 | Advanced Micro Devices, Inc. | Method of forming a semiconductor device with source/drain regions having a deep vertical junction |
US6555880B2 (en) * | 2001-06-07 | 2003-04-29 | International Business Machines Corporation | Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby |
US6621131B2 (en) | 2001-11-01 | 2003-09-16 | Intel Corporation | Semiconductor transistor having a stressed channel |
US6921913B2 (en) | 2003-03-04 | 2005-07-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel transistor structure with lattice-mismatched zone |
US7078742B2 (en) | 2003-07-25 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel semiconductor structure and method of fabricating the same |
US7112495B2 (en) | 2003-08-15 | 2006-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
US6933577B2 (en) | 2003-10-24 | 2005-08-23 | International Business Machines Corporation | High performance FET with laterally thin extension |
US20050090082A1 (en) | 2003-10-28 | 2005-04-28 | Texas Instruments Incorporated | Method and system for improving performance of MOSFETs |
US7545001B2 (en) * | 2003-11-25 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company | Semiconductor device having high drive current and method of manufacture therefor |
US7172933B2 (en) * | 2004-06-10 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Recessed polysilicon gate structure for a strained silicon MOSFET device |
KR100642747B1 (ko) * | 2004-06-22 | 2006-11-10 | 삼성전자주식회사 | Cmos 트랜지스터의 제조방법 및 그에 의해 제조된cmos 트랜지스터 |
JP4837902B2 (ja) * | 2004-06-24 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置 |
US20060035449A1 (en) * | 2004-08-10 | 2006-02-16 | Yoo Woo S | Method of forming ultra shallow junctions |
JP5203558B2 (ja) | 2004-08-20 | 2013-06-05 | 三星電子株式会社 | トランジスタ及びこれの製造方法 |
US20060065937A1 (en) * | 2004-09-30 | 2006-03-30 | Thomas Hoffmann | Short channel effect of MOS devices by retrograde well engineering using tilted dopant implantation into recessed source/drain regions |
DE102005004411B4 (de) * | 2005-01-31 | 2010-09-16 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren für die Herstellung eines in-situ-gebildeten Halo-Gebietes in einem Transistorelement |
JP5055771B2 (ja) * | 2005-02-28 | 2012-10-24 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
-
2006
- 2006-04-11 WO PCT/EP2006/004943 patent/WO2007115585A1/en active Application Filing
- 2006-04-11 US US12/296,626 patent/US8076189B2/en not_active Expired - Fee Related
-
2007
- 2007-04-11 TW TW096112740A patent/TWI438845B/zh not_active IP Right Cessation
-
2011
- 2011-12-12 US US13/316,736 patent/US8445939B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2007115585A1 (en) | 2007-10-18 |
US8445939B2 (en) | 2013-05-21 |
TWI438845B (zh) | 2014-05-21 |
US8076189B2 (en) | 2011-12-13 |
US20090152634A1 (en) | 2009-06-18 |
US20120080720A1 (en) | 2012-04-05 |
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